US20080284025A1 - Electrically Conductive Line - Google Patents

Abstract

The invention includes an electrically conductive line, methods of forming electrically conductive lines, and methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines. In one implementation, a method of forming an electrically conductive line includes providing a silicon-comprising layer over a substrate. An electrically conductive layer is formed over the silicon-comprising layer. An MSi_xN_y-comprising layer is formed over the electrically conductive layer, where “x” is from 0 to 3.0, “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W. An MSi_z-comprising layer is formed over the MSi_xN_y-comprising layer, where “z” is from 1 to 3.0. A TiSi_a-comprising layer is formed over the MSi_z-comprising layer, where “a” is from 1 to 3.0. The silicon-comprising layer, the electrically conductive layer, the MSi_xN_y-comprising layer, the MSi_z-comprising layer, and the TiSi_a-comprising layer are patterned into a stack comprising an electrically conductive line. Other aspects and implementations are contemplated.

Description

RELATED PATENT DATA
• This application is a divisional of U.S. patent application Ser. No. 11/074,106, filed on Mar. 7, 2005, entitled “Electrically Conductive Line, Method of Forming an Electrically Conductive Line, and Method of Reducing Titanium Silicide Agglomeration in Fabrication of Titanium Silicide Over Polysilicon Transistor Gate Lines”, naming Qi Pan, Jiutao Li, Yongjun Jeff Hu, and Allen McTeer, as Inventors, the disclosure of which is incorporated herein by reference.
TECHNICAL FIELD
• This invention relates to electrically conductive lines, to methods of forming electrically conductive lines, and to methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines.
BACKGROUND OF THE INVENTION
• One common component found in integrated circuits is an electrically conductive line. Such might form part of a device or subcircuit, or interconnect various devices. One common conductive line is a transistor gate of a field effect transistor device. Such are commonly used in memory integrated circuitry, for example dynamic random access memory (DRAM) circuitry. Individual memory cells of DRAM circuitry include a field effect transistor having one source/drain region thereof electrically connected with a storage capacitor, and the other source/drain region electrically connected with a bitline. The conductive transistor gate lines are commonly referred to as wordlines, with individual gate lines constituting a part of several memory cell field effect transistors.
• A common wordline construction includes titanium silicide (TiSi_x) received over conductively doped polysilicon. The titanium silicide might be provided over the polysilicon in a number of manners. For example, elemental titanium might be deposited upon polysilicon and thereafter annealed to react the polysilicon and titanium to form titanium silicide. Alternately by way of examples only, titanium silicide might be chemical vapor deposited upon polysilicon or physical vapor deposited by sputtering from a titanium silicide target. Further and regardless, the titanium silicide which is formed might initially be amorphous or crystalline. Crystallinity is desired for reduced resistance/higher conductance. Amorphous titanium silicide can be converted to crystalline titanium suicide by high temperature anneal.
• Crystalline stoichiometric titanium silicide (TiSi₂) typically exists in one of two different crystalline phases. A first phase is an orthorhombic base-centered phase having twelve atoms per unit cell, a resistivity of about 60 to 90 microohm-cm, and is known as the C49 phase. A second phase is a more thermodynamically-favored orthorhombic face-centered phase, which has 24 atoms per unit cell and a resistivity of about 12 to 20 microohm-cm, and is known as the C54 phase. Regardless of deposition method, it is common for the less-desired C49 phase to be initially deposited or formed. This C49 phase can then be converted to a desired C54 phase through appropriate annealing conditions.
• One problem associated with the fabrication of such lines is known as agglomeration of the titanium silicide relative to the underlying polysilicon. Such typically manifests when the substrate is exposed to temperatures in excess of 900° C. and which typically inherently occurs during the fabrication of the circuitry. Agglomeration is characterized by the titanium silicide migrating/extending into the underlying polysilicon. Such can be to such a degree to extend completely through the polysilicon. For transistor gate lines, the migration can even be to completely through the gate dielectric, thereby causing a fatal short. Further, the degree of agglomeration is not predictable or controllable from device to device. For transistor gates that are not fatally shorted, this undesirably creates different operating characteristics for different devices. Specifically, the degree of agglomeration within the polysilicon affects its work function and, accordingly, the threshold voltage along the gate line at which individual transistors are turned “on” and “off”.
• In an effort to reduce titanium silicide agglomeration, previous studies have focused on applying different annealing processes or adding other elements to the titanium silicide. Still, needs remain for improved methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines, and particularly in the fabrication of DRAM circuitry. Yet while the invention was motivated in addressing these issues, it is in no way so limited. The invention is only limited by the accompanying claims as literally worded, without interpretative or other limiting reference to the specification, and in accordance with the doctrine of equivalents.
SUMMARY
• The invention includes an electrically conductive line, methods of forming electrically conductive lines, and methods of reducing titanium suicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines. In one implementation, a method of forming an electrically conductive line includes providing a silicon-comprising layer over a substrate. An electrically conductive layer is formed over the silicon-comprising layer. An MSi_xN_y-comprising layer is formed over the electrically conductive layer, where “x” is from 0 to 3.0, “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W. An MSi_z-comprising layer is formed over the MSi_xN_y-comprising layer, where “z” is from 1 to 3.0. A TiSi_a-comprising layer is formed over the MSi_z-comprising layer, where “a” is from 1 to 3.0. The silicon-comprising layer, the electrically conductive layer, the MSi_xN_y-comprising layer, the MSi_z-comprising layer, and the TiSi_a-comprising layer are patterned into a stack comprising an electrically conductive line.
• In one implementation, the invention contemplates an electrically conductive line independent of the method of fabrication.
• In one implementation, a method of reducing titanium suicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines comprises interposing a composite of an MSi_z-comprising layer over an MSi_xN_y-comprising layer over an MSi_w-comprising layer intermediate the titanium silicide and polysilicon, where “w” and “z” respectively are from 1 to 3.0, where “x” is from 0 to 3.0, “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W.
• Other aspects and implementations are contemplated.
BRIEF DESCRIPTION OF THE DRAWINGS
• Preferred embodiments of the invention are described below with reference to the following accompanying drawings.
• FIG. 1 is a diagrammatic, cross-sectional view of a semiconductor wafer fragment in process in accordance with an aspect of the invention.
• FIG. 2 is a view of theFIG. 1 wafer fragment at a point of processing subsequent to that depicted byFIG. 1.
• FIG. 3 is a view of theFIG. 2 wafer fragment at a point of processing subsequent to that depicted byFIG. 2.
• FIG. 4 is a view of theFIG. 3 wafer fragment at a point of processing subsequent to that depicted byFIG. 3.
• FIG. 5 is a view of theFIG. 4 wafer fragment at a point of processing subsequent to that depicted byFIG. 4.
• FIG. 6 is a view of theFIG. 5 wafer fragment at a point of processing subsequent to that depicted byFIG. 5.
• FIG. 7 is a view of theFIG. 6 wafer fragment at a point of processing subsequent to that depicted byFIG. 6.
• FIG. 8 is a view of theFIG. 7 wafer fragment at a point of processing subsequent to that depicted byFIG. 7.
• FIG. 9 is a view of theFIG. 8 wafer fragment at a point of processing subsequent to that depicted byFIG. 8.
• FIG. 10 is a diagrammatic view of a computer illustrating an exemplary application of the present invention.
• FIG. 11 is a block diagram showing particular features of the motherboard of theFIG. 10 computer.
• FIG. 12 is a high-level block diagram of an electronic system according to an exemplary aspect of the present invention.
• FIG. 13 is a simplified block diagram of an exemplary electronic system according to an aspect of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
• This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).
• A preferred method of forming an electrically conductive line, and particularly a field effect transistor gate line, is initially described with reference toFIGS. 1-9. Referring toFIG. 1, a substrate fragment is indicated generally with thereference numeral10. Such preferably comprises a semiconductor substrate, for example a substrate comprising a bulkmonocrystalline silicon region12 having agate dielectric layer14 formed thereover. In the context of this document, the term “semiconductor substrate” or “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term “substrate” refers to any supporting structure, including, but not limited to, the semiconductive substrates described above. Accordingly,substrate fragment10 might comprise semiconductor-on-insulator substrates or other substrates, and whether existing or yet-to-be developed. Discussion proceeds with an exemplary preferred fabrication of a transistor gate line with agate dielectric layer14 thereby being provided. Of course, electrically conductive lines other than field effect transistor gates are also contemplated. An exemplarypreferred material14 is silicon dioxide deposited or grown to an exemplary thickness of from 10 Angstroms to 100 Angstroms.
• Referring toFIG. 2, a silicon-comprisinglayer16 has been formed oversubstrate12/14. An exemplary preferred silicon-comprisingmaterial16 is polysilicon. By way of example only, alternate silicon-comprising materials include monocrystalline silicon, such as epitaxially grown silicon, and silicon combined with other materials in a non-compound or non-stoichiometric manner, for example silicon and germanium. Silicon-comprisinglayer16 will ultimately form a conductive portion of the conductive line, and will thereby at some point be electrically conductive. Accordingly, silicon-comprisinglayer16 might be electrically conductive as-deposited, for example by in situ doping with a conductivity enhancing impurity during deposition. Alternately, such might be implanted or otherwise processed later to render such layer electrically conductive if not in such state as initially deposited. An exemplary preferred thickness range for silicon-comprisinglayer16 is from 400 Angstroms to 5,000 Angstroms, with 700 Angstroms being a specific preferred example.
• Referring toFIG. 3, an electricallyconductive layer18 has been formed over silicon-comprisinglayer16. Further preferably and as shown,layer18 is formed “on” silicon-comprisinglayer16, with “on” in the context of this document meaning in at least some direct physical contacting relationship with the stated layer. By way of example only, an exemplary preferred material is MSi_w, where “w” is from 1 to 3.0 and “M” is at least one of Ta, Hf, Mo, and W. In one preferred embodiment,conductive layer18 is preferably void of detectable nitrogen to preclude risk of forming an insulative silicon nitride. An exemplary preferred thickness range for electricallyconductive layer18 is from 5 Angstroms to 500 Angstroms, with from 5 Angstroms to 50 Angstroms being more preferred, and a 50 Angstroms MSi₂layer (i.e., even more specifically TaSi₂) being a specific preferred example. Such might be deposited by any suitable method, including by way of example only sputtering, chemical vapor deposition and atomic layer deposition. If chemical vapor depositing or atomic layer depositing, exemplary precursors/gasses include SiH₄and TaCl₄.
• Referring toFIG. 4, an MSi_xN_y-comprisinglayer20 has been formed over, and preferably on as shown, electricallyconductive layer18, and where “x” is from 0 (zero) to 3.0, “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W. Preferably, “x” is greater than zero, and even more preferably “x” is at least 1. An exemplary preferred thickness range for MSi_xN_y-comprisinglayer20 is from 10 Angstroms to 500 Angstroms, with from 10 Angstroms to 50 Angstroms being more preferred. A specific example is a 40 Angstroms thick MSi_xN_y-comprising layer where “x” equals 2 and “y” equals 5. MSi_xN_y-comprising layer might be deposited by any existing or yet-to-be developed method, for example including by sputtering, by chemical vapor deposition and by atomic layer deposition. A preferred exemplary sputtering technique comprises a gas sputtered against a target comprising MSi_w, with nitrogen being provided at least in part from gaseous N₂and/or NH₃. For example in one specific preferred embodiment, an inert gas and N₂are injected (together or separately) into a sputtering chamber in which the substrate is received at a ratio of inert gas to N₂of about 3:1 by volume.
• Referring toFIG. 5, an MSi_z-comprisinglayer22 is formed over, and preferably on as shown, MSi_xN_y-comprisinglayer20, and where “z” is from 1 to 3.0 and “M” is at least one of Ta, Hf, Mo, and W. MSi_z-comprisinglayer22 and electricallyconductive layer18 might be of the same composition (meaning of the same components and in their respective quantities), or of different compositions (meaning of one or both of different components or quantities of the same components). An exemplary preferred thickness range for MSi_z-comprisinglayer22 is from 5 Angstroms to 500 Angstroms, more preferably from 5 Angstroms to 50 Angstroms, with a 60 Angstroms thick MSi₂layer being a specific preferred example.
• Referring toFIG. 6, a TiSi_a-comprisinglayer24 has been formed over, and preferably on as shown, MSi_z-comprisinglayer22, where “a” is from 1 to 3.0. An exemplary preferred thickness range is from 100 Angstroms to 5,000 Angstroms, with a 400 Angstroms thick layer of TiSi₂being a specific preferred example. In specific preferred examples, electricallyconductive layer18, MSi_xN_y-comprisinglayer20, and MSi_z-comprisinglayer22 have a combined thickness which is less than that of TiSi_a-comprisinglayer24, and in certain preferred embodiments less than that of silicon-comprisinglayer16.
• Referring toFIG. 7, an electricallyinsulative layer26 has been formed over, and preferably on as shown, TiSi_a-comprisinglayer24. Exemplary preferred materials include one or both of silicon dioxide and silicon nitride. Not being electrically conductive,layer26 will not constitute a conductive portion of the line being formed, and is of course optional.
• Referring toFIG. 8, silicon-comprisinglayer16, electricallyconductive layer18, MSi_xN_y-comprisinglayer20, MSi_z-comprisinglayer22 and TiSi_a-comprisinglayer24 have been patterned into a stack comprising an electricallyconductive line30. In the depicted exemplary preferredFIG. 8 embodiment,gate dielectric layer14 andinsulative layer26 have also been patterned commensurate with the patterning of electricallyconductive layers16,18,20,22 and24. Any patterning technique is contemplated, and whether existing or yet-to-be developed. By way of example only, exemplary techniques include photolithographic patterning and etch, and laser patterning. An exemplary dry anisotropic etching chemistry for etching TiSi_aincludes CF₄and Cl₂. An exemplary dry anisotropic etching chemistry for etching MSi_w, MSi_xN_yand MSi_xcollectively also includes CF₄and Cl₂. An exemplary dry anisotropic etching chemistry for etching a polysilicon-comprising layer includes HBr, He and O₂.
• MSi_xhas been previously promoted for use as a titanium silicide agglomeration-barrier and as a C54 phase titanium silicide promoter, for example as disclosed in our U.S. patent application Ser. No. 10/609,282, filed on Jun. 26, 2003, entitled “Methods of Forming Metal Silicide, and Semiconductor Constructions Comprising Metal Silicide”, and naming Yongjun Jeff Hu as an inventor, now U.S. Pat. No. 7,282,443, the disclosure of which is hereby fully incorporated by reference as if included in its entirety herein. Without being limited by any theory or effect unless literally appearing in a claim in this application, the provision of an additional MSi_xN_y-comprising layer can further reduce titanium silicide agglomeration relative to underlying silicon-comprising layers in the fabrication of electrically conductive lines, and regardless of amorphous or crystalline phases. An electrically conductive layer is ideally interposed between the silicon-comprising layer and the MSi_xN_y-comprising layer towards precluding nitrogen of the MSi_xN_y-comprising layer from coming into contact with the silicon which might undesirably form an insulative silicon nitride. Further using the above described etching chemistries, it was found that a conductive line stack in accordance with an aspect of the invention having MSi₂over MSi₂N_yover MSi₂exhibited less undercut than a line stack having MSi₂which was void of MSi₂N_y.
• In one aspect, the invention also contemplates a method of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines, which comprises interposing a composite of an MSi_z-comprising layer over an MSi_xN_y-comprising layer over an MSi_w-comprising layer intermediate the titanium silicide and polysilicon, where “w” and “z”, respectively, are from 1 to 3.0, where “x” is from zero to 3.0, where “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W.
• The invention also contemplates electrically conductive lines, for example as described above, independent of the method of fabrication, and of course independent of the preferred effects described above.
• Referring toFIG. 9, electricallyconductive line30 can be utilized as a wordline or other field effect transistor gate line, and can be fabricated into transistor gate structures at appropriate locations. Specifically and by way of example only,FIG. 9 shows a location whereline30 has been incorporated into atransistor structure32. Source/drain regions34 and36 have been formed withinsubstrate12. Such exemplary source/drain regions are depicted as comprising a deep, heavily-doped portion,38 and a shallow, lightly-doped,portion40. Source/drain regions34 and36 can be formed utilizing conventional methods or yet-to-be developed methods, and the conductivity-enhancing dopant withinregions38 and40 can comprise either p-type dopant or n-type dopant, by way of example. Electricallyinsulative sidewall spacers42 have been formed along the sidewalls of electricallyconductive line30. Exemplary preferred materials include one or both of silicon nitride and silicon dioxide.
• Transistor device32 can be incorporated into a memory cell. In the depicted exemplary construction,device32 is incorporated into a DRAM cell. Specifically, source/drain region34 is electrically connected to astorage device50, and the other source/drain region36 is electrically connected to abitline52.Storage device50 can comprise any suitable device, including a capacitor, for example.Bitline52 can comprise any suitable construction. Electricallyconductive line30 can be considered to be part of an integrated circuit, for example the DRAM integrated circuitry just described.
• FIG. 10 illustrates generally, by way of example, but not by way of limitation, an embodiment of acomputer system400 according to an aspect of the present invention.Computer system400 includes amonitor401 or other communication output device, akeyboard402 or other communication input device, and amotherboard404.Motherboard404 can carry amicroprocessor406 or other data processing unit, and at least onememory device408.Memory device408 can comprise various aspects of the invention described above, including, for example, one or more of the wordlines, bitlines and DRAM unit cells.Memory device408 can comprise an array of memory cells, and such array can be coupled with addressing circuitry for accessing individual memory cells in the array. Further, the memory cell array can be coupled to a read circuit for reading data from the memory cells. The addressing and read circuitry can be utilized for conveying information betweenmemory device408 andprocessor406. Such is illustrated in the block diagram of themotherboard404 shown inFIG. 11. In such block diagram, the addressing circuitry is illustrated as410 and the read circuitry is illustrated as412.
• In particular aspects of the invention,memory device408 can correspond to a memory module. For example, single in-line memory modules (SIMMs) and dual in-line memory modules (DIMMs) may be used in the implementation which utilizes the teachings of the present invention. The memory device can be incorporated into any of a variety of designs which provide different methods of reading from and writing to memory cells of the device. One such method is the page mode operation. Page mode operations in a DRAM are defined by the method of accessing a row of a memory cell arrays and randomly accessing different columns of the array. Data stored at the row and column intersection can be read and output while that column is accessed.
• An alternate type of device is the extended data output (EDO) memory which allows data stored at a memory array address to be available as output after the addressed column has been closed. This memory can increase some communication speeds by allowing shorter access signals without reducing the time in which memory output data is available on a memory bus. Other alternative types of devices, by way of example only, include SDRAM, DDR SDRAM, SLDRAM, VRAM and Direct RDRAM, as well as others such as SRAM or Flash memories.
• FIG. 12 illustrates a simplified block diagram of a high-level organization of various embodiments of an exemplaryelectronic system700 of the present invention.System700 can correspond to, for example, a computer system, a process control system, or any other system that employs a processor and associated memory.Electronic system700 has functional elements, including a processor or arithmetic/logic unit (ALU)702, acontrol unit704, amemory device unit706 and an input/output (I/O)device708. Generally,electronic system700 will have a native set of instructions that specify operations to be performed on data byprocessor702 and other interactions betweenprocessor702,memory device unit706 and I/O devices708.Control unit704 coordinates all operations ofprocessor702,memory device706 and I/O devices708 by continuously cycling through a set of operations that cause instructions to be fetched frommemory device706 and executed. In various embodiments,memory device706 includes, but is not limited to, random access memory (RAM) devices, read-only memory (ROM) devices, and peripheral devices such as a floppy disk drive and a compact disk CD-ROM drive. One of ordinary skill in the art will understand, upon reading and comprehending this disclosure, that any of the illustrated electrical components are capable of being fabricated to include DRAM cells, wordlines and bitlines in accordance with various aspects of the present invention.
• FIG. 13 is a simplified block diagram of a high-level organization of various embodiments of an exemplaryelectronic system800. Thesystem800 includes amemory device802 that has an array ofmemory cells804,address decoder806,row access circuitry808,column access circuitry810, read/writecontrol circuitry812 for controlling operations, and input/output circuitry814.Memory device802 further includespower circuitry816, andsensors820, such as current sensors for determining whether a memory cell is in a low-threshold conducting state or in a high-threshold non-conducting state. The illustratedpower circuitry816 includespower supply circuitry880,circuitry882 for providing a reference voltage,circuitry884 for providing the first wordline with pulses,circuitry886 for providing the second wordline with pulses, andcircuitry888 for providing the bitline with pulses.System800 also includes aprocessor822, or memory controller for memory accessing.
• Memory device802 receives control signals824 fromprocessor822 over wiring or metallization lines.Memory device802 is used to store data which is accessed via I/O lines. It will be appreciated by those skilled in the art that additional circuitry and control signals can be provided, and thatmemory device802 has been simplified to help focus on the invention. At least one ofprocessor822 ormemory device802 can include a DRAM cell of the type described previously in this disclosure.
• The various illustrated systems of this disclosure are intended to provide a general understanding of various applications for the circuitry and structures of the present invention, and are not intended to serve as a complete description of all the elements and features of an electronic system using memory cells in accordance with aspects of the present invention. One of ordinary skill in the art will understand that the various electronic systems can be fabricated in single-package processing units, or even on a single semiconductor chip, in order to reduce the communication time between the processor and the memory device(s).
• Applications for memory cells, wordlines and bitlines can include electronic systems for use in memory modules, device drivers, power modules, communication modems, processor modules, and application-specific modules, and may include multilayer, multichip modules. Such circuitry can further be a subcomponent of a variety of electronic systems, such as a clock, a television, a cell phone, a personal computer, an automobile, an industrial control system, an aircraft, and others.
• In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.

Claims (29)

1-34. (canceled)

35. An electrically conductive line comprising:

a conductively doped silicon-comprising layer;

an electrically conductive layer received over the conductively doped silicon-comprising layer;

an MSi_xN_y-comprising layer received over the electrically conductive layer, where “x” is greater than zero and less than or equal to 3.0, “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W;

an MSi_z-comprising layer received over the MSi_xN_y-comprising layer, where “z” is from 1 to 3.0; and

a TiSi_a-comprising layer received over the MSi_z-comprising layer, where “a” is from 1 to 3.0.

36. Memory integrated circuitry incorporating the electrically conductive line ofclaim 35.

37. An electronic system incorporating the electrically conductive line ofclaim 35.

38. The conductive line ofclaim 35 wherein “x” is at least 1.

39. The conductive line ofclaim 35 wherein the MSi_z-comprising layer is received on the MSi_xN_y-comprising layer.

40. The conductive line ofclaim 39 wherein the TiSi_a-comprising layer is received on the MSi_z-comprising layer.

41. The conductive line ofclaim 35 wherein the electrically conductive layer is void of detectable nitrogen.

42. The conductive line ofclaim 35 wherein the electrically conductive layer comprises MSi_w, where “w” is from 1 to 3.0.

43. The conductive line ofclaim 42 wherein the electrically conductive layer and the MSi_z-comprising layer are of the same composition.

44. The conductive line ofclaim 42 wherein the electrically conductive layer and the MSi_z-comprising layer are of different compositions.

45. The conductive line ofclaim 42 wherein the MSi_xN_y-comprising layer is received on the MSi_w.

46. The conductive line ofclaim 42 wherein the MSi_z-comprising layer is received on the MSi_xN_y-comprising layer.

47. The conductive line ofclaim 42 wherein the MSi_xN_y-comprising layer is received on the MSi_wand the MSi_z-comprising layer is received on the MSi_xN_y-comprising layer.

48. The conductive line ofclaim 42 wherein the MSi_xN_y-comprising layer is received on the MSi_w, the MSi_z-comprising layer is received on the MSi_xN_y-comprising layer, and the TiSi_a-comprising layer is received on the MSi_z-comprising layer.

49. The conductive line ofclaim 48 wherein the MSi_wis received on the silicon-comprising layer.

50. The conductive line ofclaim 35 wherein the electrically conductive layer, the MSi_xN_y-comprising layer, and the MSi_z-comprising layer have a combined thickness which is less than that of the TiSi_a-comprising layer.

51. The conductive line ofclaim 35 wherein the electrically conductive layer, the MSi_xN_y-comprising layer, and the MSi_z-comprising layer have a combined thickness which is less than that of the silicon-comprising layer.

52. The conductive line ofclaim 35 wherein the electrically conductive layer, the MSi_xN_y-comprising layer, and the MSi_z-comprising layer have a combined thickness which is less than that of each of the TiSi_a-comprising layer and the silicon-comprising layer.

53. The conductive line ofclaim 35 wherein the electrically conductive layer and the MSi_z-comprising layer have respective thicknesses from 5 Angstroms to 500 Angstroms.

54. The conductive line ofclaim 35 wherein the MSi_xN_y-comprising layer has a thickness from 10 Angstroms to 500 Angstroms.

55. The conductive line ofclaim 54 wherein the MSi_xN_y-comprising layer has a thickness from 10 Angstroms to 50 Angstroms.

56. The conductive line ofclaim 35 wherein the conductive line comprises a transistor gate line received over a gate dielectric.

57. The conductive line ofclaim 35 wherein M comprises Ta.

58. The conductive line ofclaim 35 wherein M comprises at least one of Hf, Mo and W.

59. An electrically conductive line comprising:

a conductively doped silicon-comprising layer;

an MSi_w-comprising layer received on the silicon-comprising layer, where “w” is from 1 to 3.0 and “M” is at least one of Ta, Hf, Mo, and W, the MSi_w-comprising layer having a thickness from 5 Angstroms to 500 Angstroms;

an MSi_xN_y-comprising layer received on the MSi_w-comprising layer, where “x” is from 1 to 3.0 and “y” is from 0.5 to 10, the MSi_xN_y-comprising layer having a thickness from 10 Angstroms to 500 Angstroms;

an MSi_z-comprising layer received on the MSi_xN_y-comprising layer, where “z” is from 1 to 3.0, the MSi_z-comprising layer having a thickness from 5 Angstroms to 500 Angstroms; and

a TiSi_a-comprising layer received on the MSi_z-comprising layer, where “a” is from 1 to 3.0, the TiSi_a-comprising layer having a thickness from 100 Angstroms to 1000 Angstroms. The conductive line of claim0 wherein each of the MSi_w-comprising layer, the MSi_xN_y-comprising layer, and the MSi_z-comprising layer has a thickness no greater than 50 Angstroms.

60. The conductive line ofclaim 59 wherein each of the MSi_w-comprising layer, the MSi_xN_y-comprising layer, and the MSi_w-comprising layer has a thickness no greater than 50 Angstroms.

61. The conductive line ofclaim 59 wherein the MSi_w-comprising layer and the MSi_z-comprising layer are of the same composition.

62. The conductive line ofclaim 59 wherein the MSi_w-comprising layer and the MSi_z-comprising layer are of different compositions.

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