US20070246080A1

Movatterモバイル変換

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Publication number: US20070246080A1
Application number: US11/821,742
Authority: US
Inventors: Tracy Gast; Stephen Loper; Thomas Wagener
Original assignee: Individual
Current assignee: Individual
Priority date: 2003-06-27
Filing date: 2007-06-25
Publication date: 2007-10-25
Also published as: US7244315B2; US20050067001A1

Abstract

Improved methods of rinsing and drying microelectronic devices by way of an immersion processing apparatus are provided for effectively cleaning microelectronic devices. Methods and arrangements control the separation of one or more microelectronic devices from a liquid environment as part of a replacement of the liquid environment with a gas environment. Cleaning enhancement substance, such as IPA, is introduced into the gas environment according to a controlled profile while the separation step is conducted. The controlled profile being directed to the timing of introduction of cleaning enhancement substance, the concentration of cleaning enhancement substance and/or flow rates thereof into the vessel. Controlled timing of gas and cleaning enhancement substance delivery can also improve effectiveness of separation. Methods and arrangements are also provided for controlling a drying step to be conducted on the one or more microelectronic devices after they have been separated from a liquid environment by replacing the liquid environment with a gas environment. Preferably, an arrangement of gas distribution devices create one or more drying gas curtains, which gas curtains may be controllably directed with respect to a set of microelectronic devices to provide optimal drying of the microelectronic devices after being separating from a liquid.

Description

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. application Ser. No. 10/608,894, filed Jun. 27, 2003, entitled “MICROELECTRONIC DEVICE DRYING DEVICES AND TECHNIQUES” now allowed, the entire disclosure of which is incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to immersion or wet processing and cleaning of microelectronic devices, such as semiconductor microelectronic devices, and to enhanced techniques and methods for optimizing the rinsing and cleaning aspects of such devices. In particular, the present invention is directed to improving an aspect of such rinsing and cleaning operation wherein such microelectronic devices are cleanly separated from a liquid bath.

BACKGROUND OF THE PRESENT INVENTION

At some point during any immersion or wet processing operation, the object being processed is separated from its liquid bath. This may occur many times depending on such process and device at intermediate or final stages of processing. Such may occur in one or more immersion vessels as sequential steps or separated by other different process steps. As a general matter, and depending of the process, it may be desirable to rinse an object for cleaning it after being subjected to processing fluid in order to remove any contaminants or residual processing fluid. Moreover, the object may be further dried to remove any processing or rinsing liquids and to provide a clean processed object.

In the case of processing microelectronic devices, such as those including semiconductor wafers and microelectronic devices at any of various stages of processing, flat panel displays, micro-electrical-mechanical-systems (MEMS), advanced electrical interconnect systems, optical components and devices, components of mass data storage devices (disk drives), and the like, cleanliness is critical in virtually all processing aspects. Representative steps in immersion processing of microelectronic devices include microelectronic device etching and rinsing. As used herein, immersion processing means a process where at least a portion of a device, such as a microelectronic device, is subjected to immersion for a period of time for any effective purpose.

One important aspect in providing clean microelectronic devices after immersion processing is to start with the use of clean processing liquids. Clean liquid use can be controlled by known or developed filtering processes so as to minimize introduction of contaminants into the processing environment. This is particularly true where devices are being cleaned or rinsed by an immersion process, such as by using deionized water (DI water) as a rinsing liquid as either flowing or non-flowing liquid bath. Specific filtering techniques for ultra-clean DI water have been developed for use in the microelectronic industry, such as those described in U.S. Pat. Nos. 5,542,441, 5,651,379 and 6,312,597 to Mohindra et al. Microelectronic devices are often rinsed within vessels as a batch or individually by flowing DI water across device surfaces as supported within the vessel and cascading the DI water from the vessel. Such a process vessel for microelectronic device rinsing is commonly referred to as a cascade rinser. Cascade rinsing typically utilizes an immersion vessel having inner and outer chambers that are separated from one another by a partition or weir. One or more devices are positioned within the inner chamber of the immersion vessel. Rinse liquid, such as DI water, is supplied to the inner chamber from a source even after the inner chamber is filled. For some desired period of time then, the rinse liquid overflows and cascades over the weir into the outer chamber. That way contaminants that may be dislodged and/or residual process fluid desirably flow with the cascaded liquid from the inner chamber and away from the devices.

It is also just as important to prevent contamination or recontamination to a surface of a microelectronic device, as such contaminant may be present in the processing liquid as a result of being supplied within the process liquid, as previously dislodged from a device surface, or as a result of the device processing (including previously used processing liquids or other liquid contaminants). This is particularly true when separating the microelectronic device(s) from the liquid bath so that no substantial surface contamination occurs from contaminants that may be suspended within the rinse or other processing liquid. Microelectronic devices may be separated from any liquid bath by lifting the devices from the bath or draining the liquid bath, or a combination of the two. During such separation, contaminants that may be near a device surface during separation can sometimes be deposited onto a device surface depending on surface and particle features, affinities and sizes.

Regardless of the mechanisms involved, the basic step of separation may simply be characterized as the controlled replacement of a liquid environment about an object or portion thereof with a gas environment. As a result, the object or portion thereof is separated from the liquid. In an inline process, separation is typically done by replacing one fluid that is supplied inline with a subsequent fluid (e.g., changing from rinse liquid to clean gas). See, for example, U.S. Pat. Nos. 4,984,597 and 4,911,761 to McConnell et al. For a liquid bath type immersion process (i.e., where one or more microelectronic devices are supported or suspended within liquid contained by a vessel), the liquid environment can be controllably replaced with a gas environment by lifting or draining, as above.

In order to enhance this separation step, processes have been developed that introduce a substance within the gas environment during the replacement stage about an object that causes the liquid to shed more easily from the object surfaces. By shedding the liquid better, there is less a likelihood that any contaminant would be deposited onto an object surface from the liquid, and there is an increased chance to remove any such contaminant from an object surface. Developed processes utilize isopropyl-alcohol (IPA), in particular, to take advantage of what is known as the Marongoni effect to create a gradient in the concentration of the IPA mixed with the liquid at or near the liquid/gas meniscus formed at the object surfaces. The concentration gradient causes an acceleration of the liquid from an object surface as liquid having a greater concentration of the IPA within such a meniscus has an increased tendency to flow toward a more dilute mixture of IPA within the liquid bath. Many processes and systems have been developed taking advantage to various degrees such Marongoni effect to enhance rinsing and cleaning of microelectronic devices.

In particular, certain apparatuses and methods have been developed as are described with U.S. Pat. No. 5,772,784 to Mohindra et al, and which is owned by the assignee of the present invention. Described processes steps include the introduction of IPA as a cleaning enhance substance within a carrier gas stream for delivering a dilute concentration of IPA within the gas environment as it replaces the liquid environment caused by draining the immersion vessel. The IPA is relied upon, as described above, to increase the tendency of the liquid to flow from object surfaces during the step of separating the object(s) from the liquid.

SUMMARY OF THE PRESENT INVENTION

The present invention overcomes certain shortcomings of the prior art by improving the methods of rinsing and drying microelectronic devices by way of an immersion processing apparatus and for effectively cleaning microelectronic devices.

In one aspect, the present invention is directed to methods and arrangements for controlling the separation of one or more microelectronic devices from a liquid environment and the replacement of the liquid environment with a gas environment. In particular, cleaning enhancement substance, such as IPA, is introduced into the gas environment according to a controlled profile while the separation step is conducted. The controlled profile potentially including, according to a desired process, not only when the introduction of cleaning enhancement substance is commenced and ceased, but also the concentration of cleaning enhancement substance and flow rates thereof into the vessel.

According to certain preferred methods, flow rates of even or differing gas concentrations of cleaning enhancement substance can be varied according to selected stages of separation. In a preferred technique, gas mixture flow rates can be increased or decreased in stages or gradually over time at a fixed or varied slope as the separation progresses. Where an immersion vessel is drained to cause such separation of one or more microelectronic devices from a liquid, the flow rate of gas mixed with cleaning enhancement substance can be increased as the liquid level becomes lower in the vessel. That way, gas flow can be minimized when the liquid level is high, in particular, where the gas mixture is introduced from above to minimize rippling of the liquid surface and any influence of surface flow of the liquid. Flow rates can be increased one or more times as the level lowers to ensure sufficient delivery of cleaning enhancement substance to the liquid top surface and thus the menisci formed at the one or more devices. Concentration of cleaning enhancement substance can be the same or varied over time as well.

Controlled timing of gas and cleaning enhancement substance delivery can also improve effectiveness of separation. By continuing flow of the gas and cleaning enhancement substance even after separation of one or more device is complete, liquid drops or film left on any device surface can be better contained on such surface. Such containment can be effected by such continued flow up until, into or throughout a subsequent drying step. That way, potential contamination from any contaminant within such drop or film can be limited to that specific area where the drop or film was contained. This is particularly advantageous where drops are formed within exclusion zones, such as a commonly provided with certain microelectronic devices or microelectronic devices, and as such are typically formed at carrier contact points that contact such devices at an edge thereof.

In another aspect, the present invention is directed to methods and arrangements for controlling a drying step to be conducted on the one or more microelectronic devices after they have been separated from a liquid environment by replacing the liquid environment with a gas environment. As noted above, steps or methods of the separating step can be carried over into a drying step, for example, to contain liquid drops or films. The drying operation itself is also preferably controlled to enhance drying of all desired surfaces of such microelectronic devices. A preferred method of drying microelectronic devices is to utilize clean gas flow directed across such devices to cause liquid to evaporate or for the liquid to be blown from the device surface.

Contact points between a carrier or other support or handling structure and the one or more microelectronic devices are where liquid is more likely to accumulate after a separation step. However, other points may retain some liquid based upon other characteristics of the operation including the speed of separation, orientation of the microelectronic devices, and the like, as well as characteristics of the microelectronic devices themselves, such as the hydrophilic or hydrophobic nature of the device surface. For example, liquid accumulating at the low point of a circular microelectronic device arranged vertically is a known possibility. Liquid accumulation at contact points or low spots can be even more difficult to dry where many microelectronic devices are arranged in a spaced stack, for example, or anywhere where adjacent surfaces are relatively close to one another as compared with device dimensions. Such closely spaced surfaces can be sheltered by other surfaces to reduce effectiveness of gas flow drying techniques.

Thus, it is also desirable to control a drying operation by effectively controlling gas flow as directed about one or more microelectronic devices after separation from a liquid environment. Preferable an apparatus is provided including an arrangement of one or more nozzles that extend at least partially across an immersion vessel interior cavity. Preferably, an arrangement of gas distribution devices create one or more drying gas curtains, which gas curtains may be controllably directed with respect to a set of microelectronic devices to provide optimal drying of the microelectronic devices after being separating from a liquid. Gas curtains in accordance with the present invention can result from the arrangement of plural nozzles and/or based upon the specific nozzle design of each nozzle, such as on the size, spacing and number of gas directing orifices. Preferably, the size and number of nozzles is substantially related to the number and arrangement of microelectronic devices to be processed within the vessel.

Utilizing such controllably directable gas curtains has many benefits. A simple mechanical design may be used which includes minimal moving parts. Gas distribution devices for providing gas curtains in accordance with the present invention may be formed from simple structures and may not require complex gas handling techniques. Moreover, controllably directed gas curtains can advantageously be utilized to adjust the drying characteristics a particular immersion processing apparatus and microelectronic device size.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view in cross-section of an immersion apparatus in accordance with the present invention showing a set of microelectronic devices supported within an immersion vessel of the immersion apparatus, wherein the microelectronic devices are subject to a gas environment, in particular for drying;

FIG. 2 is a cross-sectional view of the immersion apparatus ofFIG. 1 taken along line2-2 ofFIG. 1;

FIG. 3 is a cross-sectional view of the immersion apparatus ofFIG. 1 taken along the line3-3 and showing one preferred gas control arrangement having a nozzle of the present invention for delivering a cleaning enhancement substance to the immersion vessel and three gas distribution devices of the present invention for directing drying gas flow curtains to the set of microelectronic devices positioned within the immersion vessel;

FIG. 4 shows a cross-sectional view similar toFIG. 2 additionally showing plural controllably directed gas flow curtains in accordance with one aspect of the present invention, such gas flow curtains being directed according to one exemplified flow pattern primarily toward the bottom wall of the immersion vessel by the gas distribution devices;

FIG. 5 shows a cross-sectional view similar toFIG. 4 but instead shows a different exemplified flow pattern for the controllably directed gas curtains that are moreso directed toward the side walls of the immersion vessel by the gas distribution devices;

FIG. 6 is a perspective view of an exemplary gas distribution device of the present invention showing in particular plural orifices for distributing gas therefrom;

FIG. 7 is a partial cross-sectional side view of a gas distribution device of the present invention positioned above a plurality of microelectronic devices and showing in particular plural gas distribution orifices;

FIG. 8 is a schematic view similar toFIG. 1 showing plural microelectronic devices supported with the immersion vessel while the microelectronic devices are subject to a liquid bath environment;

FIG. 9 is a schematic view similar toFIG. 8 showing the liquid environment being replaced with a gas environment and with cleaning enhance substance being introduced into the gas environment; and

FIG. 10 is a schematic view showing fluid flow and control aspects of a system in accordance with another aspect of the present invention for supplying cleaning enhancement substance to an immersion vessel.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

With reference to the accompanying Figures, wherein like components are labeled with like numerals throughout, and initially toFIGS. 1 and 2, animmersion processing apparatus10 is shown. Theapparatus10 may be used for processing, rinsing, and drying of microelectronic devices, such as semiconductor wafers at any of various stages of processing, flat panel displays, micro-electrical-mechanical-systems (MEMS), advanced electrical interconnect systems, optical components and devices, components of mass data storage devices (disk drives), or the like. In accordance with a number of aspects of the present invention, theapparatus10 provides improved rinsing/cleaning and drying capabilities for such microelectronic devices.

Theapparatus10 preferably includes animmersion vessel12, as schematically illustrated, which is preferably capable of containing any quantity of processing liquid (not shown) as utilized for affecting or cleaning one or more microelectronic devices. The processing liquid may comprise any processing liquid to which exposure to at least a portion of such microelectronic device(s), such as microelectronic device surfaces, is desired and which processing liquid is to be delivered as an immersion or liquid bath type process and that may be controllably caused to flow with respect to the microelectronic devices. As one example, processing liquid may comprise an active processing fluid such as an etchant, which could be an HF solution, a buffered HF solution, an HCl solution, or the like. As another example, processing liquid may comprise a passive processing fluid such a rinsing fluid, which could be DI water or the like. More preferably, processing liquid may comprise ultra-purified DI water, such as may be obtained by a filtering system described in commonly owned U.S. Pat. Nos. 5,542,441, 5,651,379 and 6,312,597 to Mohindra et al., the entire disclosures of which are incorporated herein by reference. Thus, in one exemplary process in accordance with the present invention, microelectronic devices may be etched by a first processing liquid, rinsed by a second processing liquid, and then subsequently dried by a drying gas after being separated from the rinsing liquid. Such etching and/or other processing steps can be conducted within a same or different immersion vessel as systems for moving microelectronic devices between vessels are well known.

Theapparatus10 preferably comprises the ability to support one or more microelectronic devices within theimmersion vessel12. For, example, a set ofmicroelectronic devices14 is shown positioned entirely within theimmersion vessel12 and supported therein by a microelectronic device support device orcassette16. As shown, thecassette16 is preferably positioned and supported within theimmersion vessel12 by asupport structure15, which may comprise one or more elements providing a support floor spaced above the vessel bottom. Preferably, theapparatus10 further includes aremovable lid18 to permit selective access to the inside ofvessel12 and a controlled environment invessel12 when thelid18 is closed. Also illustrated is an exemplary arrangement for providing one or more gas outlet devices. The illustrated arrangement includes anozzle20 for supplying a cleaning enhancement substance and gas for replacing a liquid environment with a gas environment, as described below, while a plurality of other

gas distribution devices

22,24, and26 are provided for controlled delivery of a drying gas flow, preferably in the pattern of flow curtains as described below and/or for supplying a cleaning enhancement substance, as also described below. Any one or each of

gas distribution devices

22,24 and26 can be used to provide gas in accordance with all aspects of the present invention as described below. Moreover, the

devices

22,24 and26 can be modified in size, shape, and functional gas delivery aspects based merely upon the ability to deliver gases as described below, although certain design features are preferred for directing gas flow, such as for drying purposes, also described below.

Thecassette16 may be any cassette or support device capable of supporting one or more devices, such as the illustrated set ofmicroelectronic devices14. For example, microelectronic device edge supporting systems and methods that may or may not utilize cassettes can be used alternatively such as is described in co-pending U.S. patent application Ser. No. 10/292,807, entitled “Semiconductor Microelectronic device Cleaning Systems and Methods,” and filed on Nov. 11, 2002, the entire disclosure of which is incorporated by reference herein, and which is commonly owned by the assignee of the present invention.

Thecassette16 can be movable between locations such as by a robot or the like. Alternatively, thecassette16 may instead be a support structure of theimmersion vessel12 within which microelectronic devices may be loaded into and out of thecassette16 by a robot or the like from another cassette or carrying device. Also, thecassette16 may be attached to a lifting device (not shown) for moving thecassette16 in and out of theimmersion vessel12 and may be loaded and unloaded by a robot, for example. A microelectronic device processing system need not use cassettes at all, but may instead move one or more devices around with other handling mechanisms, which mechanisms may include device support structure or may place such devices within support structure of the process equipment, such as within a vessel of an immersion apparatus.

For the purpose of illustration, acassette16 is shown comprising two substantiallyparallel rods17, eachrod17 having plural spacednotches19 for receivingmicroelectronic devices14 to be supported together with a pair ofend members21 positioned at the ends of therods17. Theparallel rods17 can be spaced apart such that substantially planar objects, such as semiconductor wafers, can fit between therods17 and rest in the spacednotches19 in therods17. As such, microelectronic devices can be held in place by gravity, although other clamps, mechanical devices or the like can also be provided. Typically, a set of microelectronic devices, as supported by thecassette16, are regularly arranged along a central axis of the microelectronic devices and are regularly spaced apart from one another so that device major surfaces are substantially parallel to each other.

Theexemplary immersion vessel12 ofFIGS. 1-9 is designed, in accordance with one aspect of the present invention, to accommodate one or more microelectronic device processing, such as for processing of a set ofmicroelectronic devices14. InFIG. 2 the major surface of onemicroelectronic device29 of the set of microelectronic devices is illustrated. As illustrated,immersion vessel12 can be generally rectangularly shaped in cross-section for accommodating the set ofmicroelectronic devices14, but may be any size and shape for accommodating one or more microelectronic devices of any size and shape. For single device processing, vessel size can be reduced significantly to reduce fluid usage. Preferably, for single device or any size set of device processing, the vessel is sized and shaped to reduce or minimize process fluid usage, balanced with the functional ability to provide sufficient and effective process fluid flow to relevant device surfaces.

Specifically, the illustratedimmersion vessel12 comprises a pair of spacedside walls28, a pair of spacedend walls30, and abottom wall32. The side, end, and

bottom walls

28,30, and32, respectively, and the materials that make up all components withinvessel12 may comprise any material suitable for a particular processing liquid application, and may be formed of any number of separate components or as components integral with one another. The side and end

walls

28 and30 are preferably dimensioned to accommodate the height of a processing liquid required to cover the relevant portion of the one or moremicroelectronic devices14 suspended or otherwise supported withinimmersion vessel12. Further, the side and end

walls

28 and30 are preferably formed to provide whatever fluid flow requirements are needed to permit sufficient processing liquid to flow with respect to the set ofmicroelectronic devices14. With other shaped vessels, the number, size and shape of the walls defining a containment vessel can vary greatly.

In accordance with an immersion process of the present invention, such as a processing or rinsing step, it is preferable to flow processing liquid through theimmersion vessel12 past the set ofmicroelectronic devices14. To controllably do this, a cascade rinser may be provided comprising theimmersion vessel12 as an inner vessel along with anouter vessel34 or other containment structure for collecting cascaded process fluid from the inner vessel. Alternatively, process fluid can be simply cascaded to whatever environment surroundsvessel12, as may be appropriate depending on process fluid handling needs. Anouter vessel34 or containment structure may completely surroundimmersion vessel12 or it may be provided only along one or more portions of theimmersion vessel12. In accordance with the illustrated embodiment, anouter vessel34 comprisesouter side walls36 that extend higher thantop edges38 ofside walls28 and which are operatively connected to outer surfaces of theside walls28 bybottom wall40 to create a weir structure for controllably receiving process fluid from theinner vessel12. Theouter side walls36 may be operatively connected to theside walls28 at or below thetop edges38 by any conventional or developed connection or integral making technique. This design permits fluid flow over thetop edges38 and intochannels42 that are preferably created between top portions ofside walls28 and theouter side walls36. The embodiment illustrated inFIGS. 1 through 9 also includes outer end walls44 (seeFIG. 2) that along withtop edges46 ofend walls30 connect withbottom wall48 to definechannels50 as additional weir structure.

In the illustrated embodiment ofFIGS. 1 and 2, thetop edges38 ofsidewalls28 and thetop edges46 ofend walls44 create a controlling part of the weir structure over which processing liquid can flow. Such top edge surfaces may be flat, as shown, or may be tapered or angled down or otherwise shaped into

channels

42 and50. One or more notches or other openings may also be provided to assist in fluid flow dynamics and/or distribution along the weir structure. Where animmersion vessel12 doesn't include an outer vessel or weir structure, cascading flow can be controlled in a similar manner by controlled flow over an edge, or flow can be effected by any fluid outlet or fluid flow control device or devices in any arrangement.

For supplying processing liquid, one or more inlets, such asliquid inlet52 permits fluid communication from a processing liquid source (not shown) into the interior of theimmersion vessel12. Such liquid inlet may be provided at the bottom (as shown) or anywhere along the sidewalls or from the top so long as process flow requirements are met based upon any desired application. Preferably, theliquid inlet52 includes avalve54 for controlling the flow of such liquid into theimmersion vessel12. Processing liquid is supplied via theliquid inlet52 until theimmersion vessel12 is filled with processing liquid suitable to cover the relevant microelectronic device surfaces for treatment. As a cascade vessel, such as is illustrated inFIG. 8, liquid is supplied preferably completely up to its sidewall

top edges

38 and46. As continued processing liquid is supplied, liquid will spill or cascade over the

40 and48 of theouter vessel34 help define the width of

channels

42 and50, and also provide space to accommodate liquid drains56 and57 formed in

bottom walls

40 and48 respectively of theouter vessel34. If desired, the

channels

42 and50 may each include an outervessel liquid drain56, which drains themselves can be provided in any conventional or developed way depending on the desired fluid flow characteristics. The

drains

56 and57 may also permit gas flow, such as from thenozzle20 and/or

gas distribution devices

22,24, and26 to exit from theapparatus10. Where other or no containment structure is provided, drains may be unnecessary.

After the set ofmicroelectronic devices14 is processed and/or rinsed, it is desirable in accordance with one aspect of the present invention to remove or separate the one or moremicroelectronic devices14 from the liquid environment and progressively introduce the set of microelectronic devices14 (or any portion thereof subjected to liquid bath or immersion treatment) to an environment containing gas. Separation thus can be characterized as the gradual replacement of the liquid environment surrounding themicroelectronic devices14 with a gas environment. Such a gas containing environment need not be completely gas, but it preferably is also extremely clean and contains only gases that will not adversely affect the set ofmicroelectronic devices14 or that can enhance clean separation, as will be described below.

Draining of processing liquid from theimmersion vessel12 effectively separates the set ofmicroelectronic devices14 from the processing liquid. Theimmersion vessel12 is preferably drainable for removing processing liquid at any desired time by way of at least oneimmersion vessel drain58, which preferably includes anadjustable flow valve60 for controlling the drain rate of theimmersion vessel12. Also, theimmersion vessel12 may preferably include aquick dump drain62, controllable by avalve64 that may be used to provide fast removal of processing liquid from theimmersion vessel12 when desired. That is, it may be desirable to drain the processing liquid to a point below the set ofmicroelectronic devices14, such as to thefloor support15, at a controlled rate by way of thedrain58 and then quickly remove the remaining processing liquid with thequick dump drain62 accordingly. During drainage of theimmersion vessel12, the cascading effect (if provided for) would cease. It is noted thatliquid inlet52,drain58, andquick dump drain62 may be provided separately or combined together as desired by using any known or developed arrangement of plumbing, valves, fluid handling devices, or the like.

Preferably, the drain rate with respect to the microelectronic device surfaces is accurately controlled. For microelectronic devices, drain rate can be stated as a function of the rate that the gas environment replaces the liquid environment as experienced across a vertical surface (whether such a surface actually exists or not). For the purpose of obtaining better separation, it is preferable that the gas environment replaces the liquid environment at a rate of around 5 mm per second or less. Preferably, the gas environment should replace the liquid environment at a rate of 2 mm per second or less. The rate of replacement can be controlled easily by controlling the flow of liquid from theimmersion vessel12, such as by utilizing a variable and controllable valve device asdrain valve60. Alternatively, the liquid environment can be removed by other conventional or developed liquid transfer mechanisms utilizing gravity, positive pressure, siphons, or like.

Preferably, the gas environment replaces the liquid environment at a substantially constant rate while the replacement passes across the microelectronic devices. However, it is contemplated that the replacement rate can be varied if desired. Preferably also, after the replacement passes the microelectronic devices, such as when the liquid level falls below thesupport structure15, described above, the speed of drain can be increased, by either varying the opening of thedrain valve60 and/or opening thedump valve64. Preferably, thedump valve64 is fully opened to remove the remaining liquid quickly once the liquid level falls below the microelectronic devices.

Alternatively, the set ofmicroelectronic devices14 may be separated from a processing liquid by a lifting type separation. That is, for certain applications, thecassette16 or other support device for one or moremicroelectronic devices14 can be raised from a processing liquid by a lifting mechanism or device such as a robot or the like. Such a lift mechanism may comprise any known or developed system suitable for gripping thecassette16 or microelectronic devices and moving them in and out of the interior space of theimmersion vessel12. To accommodate a lifting mechanism of any type, sufficient head space belowlid18 would be provided within which the microelectronic devices could be positioned, and such mechanism could be located within the head space too or it could pass through such lid or other closure structure with appropriate accommodation.

It is also contemplated that microelectronic device separation could be conducted by any combination of lifting of microelectronic devices and draining of processing liquid. Additionally, each of the inlet and drains discussed above may be controlled by any conventional or developed valve mechanisms and/or and further controlled by any conventional or developed control systems for controlling fluid flow into and out of theimmersion vessel12 and outer vessel34 (or plural portions thereof). With either a lift separation or combination of lift and drain separation, it is preferable, as above to control the separation rate for enhanced separation of liquid from the microelectronic surfaces.

Certain tensioactive compounds are known or may be developed for affecting the surface tension between the microelectronic device surfaces and processing liquid at the interface of any microelectronic device surface, the processing liquid surface and the gas environment. Such tensioactive compounds can be provided easily within the replacement gas environment either as gas or as liquid droplets atomized or the like within the gas or may be delivered as liquid to the process liquid surface. A preferred example of such a tensioactive compound that may be delivered in gas or vapor form or as a liquid is isopropyl alcohol (“IPA”). Other examples of suitable tensioactive compounds include ethyleneglycol, 1-propanol, 2-propanol, tetrahydrofuran, 1-butanol, diacetone alcohol, 2-ethoxy-ethanol, 1-methoxy-2-propanol, acetone, n-butyl acetate and hydrofluoroethers that have been more recently developed. Tensioactive compounds may be delivered in many physical forms, and by many methods, e.g., in gas form, as a gas in a carrier gas, as a liquid, as an aerosol in a carrier gas or as an aerosol introduced directly into the process vessel. The cleaning enhancement substance is preferably delivered as a gas (with or without a carrier gas). Methods for adding a cleaning enhancement substance to a carrier gas are described in commonly owned U.S. Pat. No. 5,772,784 to Mohindra et al., the entire disclosure of which is incorporated herein by reference.

A cleaning enhancement substance of the type described above can be delivered to theimmersion vessel12 by anozzle20, one or more of the

gas distribution devices

22,24, and26, or any combination thereof. As shown inFIG. 3,nozzle20 can be provided with one ormore orifices74 in any desirable arrangement. Likewise, the illustrated

gas distribution devices

22,24, and26 includeorifices88, which are described in detail below. In one embodiment, a cleaning enhancement substance can be supplied from a cleaning enhancement substance source, discussed below, to thenozzle20 by aninlet68, can also include acontrollable valve70, or the cleaning enhancement substance can be supplied to one or more of the

gas distribution devices

22,24, and26 by asupply inlet110, which preferably includes acontrollable valve112. It is contemplated that each of the

gas distribution devices

22,24, and26 may have an individual gas supply or they may be commonly supplied by using any known or developed gas handling techniques or devices.

If used, thenozzle20 can be operatively mounted to thelid18, such as by mountingstructures66 as shown inFIGS. 1 and 2. As shown inFIG. 3, thenozzle20 also may includeplural rows72 of theorifices74 for controlled delivery of a cleaning enhancement substance to theimmersion vessel12. Thenozzle20 is preferably designed such that it is capable of substantially uniformly delivering cleaning enhancement substance within a gas environment as such replaces a liquid environment about themicroelectronic devices14. As shown, thenozzle20 is illustrated as a plate that extends in length and width to cover the set ofmicroelectronic devices14. Although thenozzle20 is illustrated as a generally rectangular plate, thenozzle20 may alternatively be formed as having any shape, such as a disk or showerhead or the like. Generally, it is preferred that thenozzle20 is to cover at least a portion of the set ofmicroelectronic devices14 and preferably to cover an entire set. Thenozzle20 may comprise a single nozzle, as illustrated, or may comprise any number of distinct nozzles having one or more delivery orifices for introducing cleaning enhancement substance as described above.

Cleaning enhancement substance is preferably provided during the entire period over which the liquid environment is replaced by a gas environment with respect to the one or more microelectronic devices supported withinvessel12. This replacement process being facilitated by gas flow into thevessel12 from any one or more ofnozzle20 and/or

gas distribution devices

22,24 and26, as provided, and which gas flow can be controlled based upon the desired gas pressure withinvessel12 and as affected by the rate of removal of the liquid environment.

Another aspect of the present invention relative to the controlled flow of cleaning enhancement substance with the gas environment replacement of the liquid environment is to vary the flow or concentration of cleaning enhancement substance into the gas environment. That is, flow rates or different gas concentrations of cleaning enhancement substance can be varied according to select stages or continuously over periods or all of the separation process. When theimmersion vessel12 is drained because the separation as described above at the desired rate of replacement, the flow rate of cleaning enhancement substance can be increased, for example, as the liquid level becomes lower within thevessel12. The flow of replacement gas in addition to the cleaning enhancement substance can also be controlled to accommodate adequate gas input as part of the replacement process. Flow rates can be varied in accordance with a stepped profile, a continuous or sloped profile, or combinations thereof over the separation process or any portion thereof. Variances of flow rates can an increase, decrease, or mix thereof, and may be done in conjunction with concentration variations of the cleaning enhancement substance. Variations of the cleaning enhancement substance may also be done independently from flow rates.

According to one preferable process technique, gas and cleaning enhancement substance flow is minimized when the liquid level is high within thevessel12 in order to minimize rippling of the liquid surface and any influence on surface flow of the liquid. As a level drops, however, flow rates may be increased at one or more times in order to ensure sufficient delivery of cleaning enhancement substance to the liquid top surface and thus the menisci that are formed at surfaces of the microelectronic devices and to effectively replace the liquid environment with gas. The concentration of the cleaning enhancement substance over such flow changes can be the same or varied as well over time. It is contemplated that the flow rates of the cleaning enhancement substance can be increased or decreased as stages or as a gradual continual process depending on a desired effect. It is preferable, however, to increase flow of cleaning enhancement substance into the gas environment as the liquid level lowers for adequate substance delivery and effectiveness of the cleaning and rinsing operation. For potential time periods after the level falls below the microelectronic devices, it is contemplated that the cleaning enhancement substance flow rate can be increased or decreased based upon a particular process and as empirically determined or otherwise predicted for the purposes discussed above in containing droplets at contact points.

As part of the delivery process of the cleaning enhancement substance,FIG. 10 illustrates a provision of the cleaning enhancement substance at a desired concentration. Specifically, clean gas, such as ultrapure nitrogen (or any other preferably ultrapure, inert gas) is utilized to pick up cleaning enhancement substance for delivery to the interior of thevessel12. Alternatively, atomized liquid cleaning enhancement substance can be introduce directly into thevessel12, or cleaning enhancement substance in liquid form can be dispensed onto the process liquid. Preferably, clean nitrogen gas is passed through abubbler vessel200 containing a quantity of cleaningenhancement substance202, such as IPA. The clean gas can be hot or cold and supplied at various rates depending on the amount of cleaning enhancement substance to be picked up by the gas flow.

Specifically, inFIG. 10, an exemplary system is illustrated including anitrogen supply204 cleaning to anitrogen heater206 that is connected by way ofline208 to a gas ring orsparger210 with holes so that temperature controlled nitrogen flows substantially from the bottom of thebubbler vessel200 up through the volume ofIPA202. As result of this operation, IPA vapor is carried with the nitrogen gas flow throughfurther line212 and preferably through a on/offtype control valve214 for delivery to the interior of theimmersion vessel12, preferably through a furthergas filter device216.FIG. 10 also shows thenitrogen supply204 connectable alternatively through thenitrogen heater206 with adelivery line218 preferably connected by way of a variably controlledbypass valve220 to the interior ofvessel12, again preferably throughgas filter216. That way, clean nitrogen gas flow can be delivered through the illustrated system through the bypass circuit includingalternative delivery line218 or through thebubbler vessel200 independently from one another as controlled by thecontrol valve214 andbypass valve220. It is contemplated that either manner may be utilized solely at any given time or that gas can be delivered through both subsystems together at controlled ratios in order to achieve desired gas flow rates and concentrations. Moreover, as described above, independent or combined gas and IPA delivery can be to any one or more ofnozzle20 and

devices

22,24, and26.

Another important aspect in affecting concentration of cleaning enhancement substance, in particular, is controlling how much cleaning enhancement substance vapor is or will be picked up by the nitrogen gas flow through thebubbler vessel200. The nitrogen gas can be potentially saturated with IPA vapor through thebubbler vessel200 based in part upon gas flow rates and the volume of IPA through which the nitrogen gas flows. It is also understood that temperature and pressure affect the potential concentration of cleaning enhancement substance, like IPA, within a gas, such as nitrogen. Specifically, the temperature of the nitrogen/IPA mixture as it leaves thebubbler vessel200 affects the amount of IPA that can be carried by the nitrogen gas. Likewise, the pressure of the nitrogen/IPA gas mixture, measured as back pressure withinline212 or head space gas pressure above the liquid IPA inbubbler vessel200, affects such potential concentration of IPA in the nitrogen gas. Pressure and temperature of these points affect the potential concentration of IPA within the nitrogen gas based upon known principles and according to relationships that are commonly represented as curves charting temperature versus pressure as to the ability to achieve desired configurations of a desired vapor (for example) within a desired gas (e.g. a desired concentration of IPA in nitrogen at a specific temperature and pressure). It is further understood that such concentration can be controlled by controlling temperature and pressure, as the outgoing concentration of IPA within nitrogen fits such known curves.

Heat can be supplied as part of the concentration system in any number of ways including connective, conductive and/or radiant heat transfer systems. Similarly, if desired for any particular application, any type of cooling system could be utilized. For example, heat could be transferred to or from thebubbler vessel200 directly by any such heat transfer mechanism, which heat transfer would affect the temperature of the liquid IPA and thus the concentration of the nitrogen/IPA mixture. Alternatively, as illustrated inFIG. 10, the liquid IPA could be heated (or cooled) by heating (or cooling) the nitrogen gas, such as bynitrogen heater206, which itself can controllably heat the gas by any known or developed technique. As such, heated nitrogen gas can add heat to the system for heating the liquid IPA and thus the more important mixture of nitrogen and IPA as a concentration control. Temperature of the mixture, or any constituent part, can be monitored at any time on the basis of a correspondence to the amount of heat to be supplied bygas heater206 as part of a feedback control to achieve desire mixture concentration. For example, if the liquid IPA temperature is too cool, as monitored by asensor222, the nitrogen could be introduced at an elevated temperature.

Likewise, pressure of the mixture from thebubbler vessel200 can be monitored and controlled to achieve a desired mixture concentration of cleaning enhancement substance in gas, such as IPA in nitrogen, taking into account the machine temperature, constituent fluids and known relationships as represented by developed curves. Pressure within the headspace of thebubbler vessel200 is dependent upon the pressure of introduction of gas into thebubbler vessel200 and the flow rate by which the mixture is allowed to escape. Such a flow rate is controllable by any type of flow controlling by valve or orifice, such as may be variable to control a desired back pressures withinline212. Controlling back pressure inline212 also controls the pressure within the headspace ofbubbler vessel200 and thus controllably affects the concentration of IPA within the nitrogen/IPA mixture leaving thebubbler vessel200.

As an example for controlling back pressure effectively, aback pressure regulator224 is illustrated inFIG. 10 that can be controlled to regulate the flow through the device based upon the monitoring of the back pressure upstream of theback pressure regulator224. Such regulators, per se, are conventionally known as may be driven to change flow rates by acontroller226 that may be electric, mechanical, pneumatic or the like and based upon input information, such as electrical signals, provided via anelectrical connection227 from apressure transducer228 that is operative to sense pressure within thebubbler vessel200, for example. Where such aback pressure regulator224 regulates the back pressure inline212 upstream from itself, thevalve214 is preferably a two position fully opened and closed type valve.

Whatever level of saturation the nitrogen leaves thebubbler vessel200, that concentration can, if desired, be further controlled or manipulated by supply of additional nitrogen throughline218. In that case, thebypass valve220 is preferably variable. Also, in any case, the concentration of IPA is preferably controlled to be at or near saturation as it will be decreased substantially within the interior of theimmersion vessel12 once introduced into the gas environment thereof, which environment at lower pressure can be provided solely by gas through a system such as that ofFIG. 10 or supplemented with other gas supply.

According to preferred methods of utilizing cleaning enhancement substance as part of the separation and replacement process, cleaning enhancement substance is introduced during the entire period over which the liquid environment is replaced by the gas environment as such replacement passes across all microelectronic devices surfaces. During this operation stage, it is preferable for processing 300 mm wafers or the like to introduce the cleaning enhancement substance at a substantially even concentration of between 0.5 percent and 3.6 percent, preferably between 1.5 percent and 2.0 percent. This concentration may change significantly for microelectronic devices of different types and/or sizes. However, for 300 mm wafers of the like, it is preferable that the flow rate of the supply of nitrogen and IPA be increased in stages starting at a flow rate of between 50 slm (standard liters per minute) and 200 slm and increasing by about between 50 slm and 100 slm at between 10 and 30 seconds time intervals while replacing the liquid environment with a gas environment at a rate of between 1 and 3 mm/sec. As above, these rates and times may be changed significantly for microelectronic devices.

Then, it is further preferable to continue at about the final flow rate when the liquid level falls below the microelectronic devices while the level continues to be lowered at a controlled rate. After a short period sufficient for the level to be sufficiently away from the microelectronic devices to not potentially rewet them, thedump valve64 is preferably opened. A continued flow of cleaning enhancement substance is still preferred, although potentially at a lower flow rate, or stages of flow rates, through the quick dump and into a drying step, if conducted, for containing liquid drops or films, such as at contact points, as discussed above.

It is also preferable to perform a step of drying after separating the set ofmicroelectronic devices14 from a processing liquid. The step of drying preferably substantially removes all liquid droplets adhering to certain surfaces such as microelectronic device surfaces, microelectronic device edges, carrier edges, and the like, as well as any adsorbed liquid that may be present on a microelectronic device surface. As such, the principles of the present invention may be used to dry microelectronic devices regardless of how such liquid droplets and/or adsorbed liquid is introduced to the microelectronic devices. Liquid droplets and/or adsorbed liquid can be introduced to microelectronic devices by separation from a processing liquid, spraying or rinsing, or from exposure to a humid environment, as examples.

Preferably, in accordance with the present invention, the

gas distribution devices

22,24, and26 are utilized to supply

gas curtains

76,78, and80, respectively, as shown inFIGS. 4 and 5 and described in greater detail below. InFIG. 6 a perspective view of thegas distribution device24 is shown as an exemplary gas distribution device in accordance with the present invention. It is noted that the

gas distribution devices

22 and26 are preferably similar to thegas distribution device24 but need not be and may comprise any gas distribution device such that the functional aspects of the present invention are achieved. Preferably, thegas distribution device24 is formed as a tube-like structure, as illustrated, and includes a gas inlet at afirst end84, which gas inlet is preferably connectable to a pressurized drying gas supply (not shown). Asecond end86, opposite thefirst end84, may also be connectable to a pressurized drying gas supply (not shown) or may be closed depending on the gas flow requirements. The

gas distribution devices

22,24, and26 may be formed from any suitable material.

Preferably, thegas distribution device24 includes plural circularly shaped orifices oropenings88 formed as a row of spaced apart orifices for distributing gas therefrom. Theorifices88 may be any shape such as circular, elliptical, square, rectangular, slot shaped, or the like. Preferably, the exemplarygas distribution device24 of the present invention includes an arrangement oforifices88 that can provide a directional gas curtain such as thegas curtain78 ofFIGS. 4 and 5. Such a gas curtain can be provided by using a row of closely spaced orifices to provide a curtain-like stream of gas flow. That is, preferably each individual stream of gas flowing from each individual orifice contributes to the overall gas flow of the gas curtain. The provision of a gas curtain made up of individual directional gas streams can be effected by using non-diverging orifices asorifices88. Moreover, a sufficient number of closely spacedorifices88 can enhance the creation of a gas curtain. For example, one preferred arrangement oforifices88 may be formed as a single row of orifices, each having a diameter of about 0.04 inches and spaced apart by about 0.2 inches for 300 mm wafers with 5 mm pitch distance between wafers. Further, it is contemplated that plural rows of any desired number oforifices88 may be used. If plural rows oforifices88 are used, such rows may be positioned such that orifices are adjacent to each other or the rows may be arranged so that theorifices88 are staggered or offset from each other. Theorifices88 may include any designs for the purpose of controlling the direction of gas flow from

devices

22,24 and26 and may include different designs within one device or from one device to another.

Each of the

gas distribution devices

22,24, and26 is preferably generally tube shaped, as shown. The

gas distribution devices

22,24, and26 may, however, comprise any shape such that the

gas curtains

76,78, and80 can be controllably directed with respect to the set ofmicroelectronic devices14 for providing adequate flow of drying gas around the set ofmicroelectronic devices14 and/or for introduction of other gas with or without cleaning enhancement substance. For example, the

gas distribution devices

22,24, and26 may be square, rectangular, or plate shaped. Moreover, the

gas distribution devices

22,24, and26 may be provided as individual devices or may be formed as a single device capable of directionally providing any desired number of gas curtains such as the

gas curtains

76,78, and80. Additionally, it is noted that any number of gas distribution devices for providing any number of gas curtains may be used in order to achieve desired gas flow requirements such as for different size microelectronic devices, for example.

During a drying step, the

gas curtains

76,78, and80 comprise at least drying gas. The drying gas can be any suitable gas capable of removing liquid from the microelectronic device edges, microelectronic device surfaces, and the like. The drying gas is preferably ultra-pure nitrogen and the like, but may also be a variety of other gases or gaseous mixtures that are preferably inert and ultraclean. In one preferred embodiment, the drying gas is heated ultra-pure nitrogen. Such drying gas may preferably be heated so that it enters the chamber ofvessel12 at a temperature of about between 50° C.-80° C. Preferably, the drying gas is directed to the microelectronic devices at a temperature that effectively vaporizes the process liquid more quickly than at room temperature.

Preferably, drying gas is supplied to the

gas distribution devices

22,24, and26 by thegas supply inlet110, which preferably includes thevalve112 for controlling the flow of gas. As mentioned above, each of the

gas distribution devices

22,24, and26 may have a separate drying gas supply or they may be commonly supplied by using any known or developed gas handling techniques or devices.

InFIG. 7, thegas distribution device24 is shown in partial cross-section positioned above

microelectronic devices

90,91,92, and93. Themicroelectronic device90 includes first and second

major surfaces

94 and95.Microelectronic device91 includes first and second

major surfaces

96 and97.Microelectronic device92 includes first and second

major surfaces

98 and99. And,microelectronic device93 includes first and second

major surfaces

100 and101.

Thegas distribution device24 preferably includes circularly shaped (seeFIG. 7)

orifices

102,104, and106 for supplying

gas columns

112,114, and116. As such, the gas columns may form a gas curtain in accordance with the present invention such as thegas curtain78. Preferably, the

orifices

102,104, and106 comprisedirectional side walls108 that are substantially non-diverging or non-converging for shaping columnar gas streams as illustrated. As such, the

orifices

102,104, and106 can each direct a columnar shaped stream of drying gas (as part of the gas curtain78) with respect to the major surfaces of the microelectronic device being processed. As described above, the individual columnar streams of gas from the

orifices

102,104, and106 collectively form the gas curtain. It is contemplated that such gas streams could be diverging or otherwise, but it is preferable that the gas streams are substantially directional, as described below, at least in a direction toward the microelectronic devices.

Preferably, thegas distribution device24 is designed such that one or more gas columns such as the

gas columns

112,114, and116 can be directed between pairs of microelectronic devices. Such is preferably provided for each microelectronic device supported within thevessel12. In other words, a single gas column may be directed between each pair of microelectronic devices or plural gas columns may be directed between any such pair of microelectronic devices. As shown,gas column112 is directed between

microelectronic devices

90 and91,gas column114 is directed between

microelectronic devices

91 and92, andgas column116 is directed between

microelectronic devices

92 and93. Although any gas column may be directed at a microelectronic device (not between), it is preferred that at least one gas column is directed between pairs of microelectronic devices. As such, a significant amount of substantially unobstructed gas flow over the surfaces of the microelectronic devices can be provided. Such substantially unobstructed gas flow over the microelectronic device surface results in improved microelectronic device drying characteristics with less microelectronic device contamination. It is noted that any number of gas distribution devices may be used for any number of microelectronic devices such as the

gas distribution devices

22,24, and26 described above.

The

gas distribution devices

22,24, and26 preferably produce gas flow at a predetermined velocity to cover a desired number of microelectronic devices. Each gas distribution device may produce gas flow of, for example, nitrogen gas at any flow rate to generate any amount of drying gas flow within the vessel; however, for 300 mm wafers, it is preferred for each

gas distribution device

22,24 and26 to deliver between 100 slm and 300 slm, and more preferably about 200 slm. It is noted that the

gas distributions devices

22 and26 are preferably similar to thegas distribution device24 described above but may alternatively be designed to provide any desired flow characteristics, which flow characteristic may be different fromgas distribution device24. Further, any number of gas distribution devices may be used in accordance with the present invention, each of which may have different flow characteristics.

Preferably, the

gas distribution devices

22,24, and26 are operatively attached to thelid18 so that each of the

gas distribution devices

22,24, and26 extends longitudinally in a direction generally perpendicular to a surface of a microelectronic device of the set ofmicroelectronic devices14. That is, preferably, the

gas distribution devices

22,24, and26 extend in a direction parallel to a central axis of an arranged set ofmicroelectronic devices14 at predetermined spacing. Such an arrangement of the

gas distribution devices

22,24, and26 can provide a uniform gas flow regime with respect to the set ofmicroelectronic devices14 within theimmersion vessel12 as is described below. It is contemplated however, that the

gas distribution devices

22,24, and26 may be angularly oriented with respect to the surface of a microelectronic device of the arranged set ofmicroelectronic devices14, other than perpendicularly, to achieve any desired gas flow requirements or uniformity depending on the application.

The

gas distribution devices

22,24, and26 are preferably positioned to be above and spaced apart from the set ofmicroelectronic devices14 as shown inFIGS. 1 and 2. Also, the illustrative

gas distribution devices

22,24, and26 are preferably equally spaced apart from each other, which spacing may be varied depending on the application. Spacing between

devices

The

gas distribution devices

22,24, and26 may also be mounted to the lid so as to be equally spaced away from thelid18 as illustrated. As such, the

gas distribution devices

22,24, and26 can be removed with thelid18 so that thecassette16 with the set ofmicroelectronic devices14 may easily be moved into and out of theimmersion vessel12. Alternatively, the

gas distribution devices

22,24, and26 may be spaced at differing distances from the set ofmicroelectronic devices14 or from each other depending on the application. The spacing of the

gas distribution devices

22,24, and26 from the set ofmicroelectronic devices14 and from each other may be varied depending on the particular application. Factors considered in positioning the

gas distribution devices

22,24, and26 may include the microelectronic device size, processing fluid type, drying gas type, and desired flow characteristic.

In one illustrative embodiment shown inFIG. 4, the

gas distribution devices

22,24, and26 may be designed and provided to direct the

gas curtains

76,78, and80 respectively in an initial direction generally perpendicular to thebottom wall32 of theimmersion vessel12 and parallel to theend walls30. In other words, each of the

gas curtains

76,78, and80 are directed substantially perpendicularly to a reference plane that passes through a central axis of the regularly arrangedmicroelectronic devices14. In such an arrangement, it has been discovered that as the gas flow increases, the

outer gas curtains

76 and80 may be drawn closer to thecenter gas curtain78 by the flow of thegas curtain78 as is illustrated inFIG. 4. Thus, for certain applications, such as a process having high gas flow and large microelectronic devices, the

gas curtains

76 and80 may be drawn toward thecenter gas curtain78 away from the outside edges of the microelectronic devices thereby reducing gas flow at the outside edges of the microelectronic devices. Different gas flow rates from one gas distribution device to another can be utilized to facilitate such.

It has further been discovered that the position of the

gas curtains

76 and80 and the uniformity of the gas flow of the

gas curtains

76,78, and80 together may be controllably adjusted. By directing the

gas curtains

76 and80 away from each other and toward theside walls30, as illustrated inFIG. 5, gas flow over the microelectronic device surfaces can be controlled to provide a controlled gas flow and improved drying. That is, the

gas curtains

76 and80 are preferably directed at an angle away from thegas curtain78, whereas the combination affect with the drawing tendency of thecenter gas curtain78 is to controllably direct the drying gas flow. As illustrated inFIG. 5, it may be desirable to have

curtains

76 and80 directed moreso to support contact points where liquid has a greater tendency to accumulate. It is noted that the positions of the

gas distribution devices

22,24, and26, with respect to the set ofmicroelectronic devices14 and with respect to each other, as well as the angles of

gas distribution devices

22 and26 with respect togas distribution device24 may be empirically determined for a particular application. In other words, a trial and error process may be used to characterize aparticular immersion vessel12 for achieving optimized gas flow requirements for a particular microelectronic device size, for example. Note also thatFIGS. 4 and 5 show certain desirable flow patterns through the devices and back within the immersion vessel, but that flow patterns back up the side walls and beyond are very dependent on design aspects of how the gas is exhausted and thus are not illustrated. Returning gas flow is also largely affected by spacing between the devices and side walls of the vessel, which spacing is preferably minimized to reduce process chemical usage. Other factors may also affect such flow patterns, in particular after gas flows initially past the devices. For example, with some devices, it may be desirable to open the quick dump valve or door which may further create back flow from ambient air.

As an example, when processing300 mm microelectronic devices, three gas distribution devices may preferably be used, such as the

gas distribution devices

22,24, and26 shown inFIG. 5. Preferably, the

gas distribution devices

22 and26 are spaced apart by about 76 mm from each other with thegas distribution device24 approximately centered an equal distance between them. Also preferably, the set ofmicroelectronic devices14 is positioned such that, as seen in cross-section inFIG. 5, the center ofmicroelectronic device29 is positioned about 185 mm from the center of thegas distribution device24. More preferably, thegas curtain78 is directed towards thebottom plate32 while the

gas curtains

76 and80 are directed at an angle of about 30° away from thegas curtain76 and toward theside walls30.

Referring again toFIGS. 1 and 2, a preferred process in accordance with the present invention may be performed as follows. A set of microelectronic devices is preferably loaded into thecassette16 by any technique such as by hand or by a robot. Theimmersion vessel12 is preferably filled with a rinsing liquid such as room temperature DI water byliquid inlet52 and allowed to cascade such that an overflow sensor or the like signals a robot, for example, to place thecassette16 into theimmersion vessel12 while thelid18 is open. Alternatively, the cassette could be placed in theimmersion vessel12 before or any time while DI water enters theimmersion vessel12. Once thecassette16 is positioned within theimmersion vessel12, the cascading DI water is preferably allowed to cascade for a predetermined amount of time, depending upon the specific application. After such time period, theliquid inlet52 is closed and drain58 is opened, which allows the DI water to drain from theimmersion vessel12 at a controlled predetermined rate. At the same time that the drain is opened, any or all of thenozzle20 and/or

gas distribution devices

22,24, and26 preferably introduce a cleaning enhancement substance and a carrier gas such as nitrogen and IPA to theimmersion vessel12 at a rate sufficient to replace the draining liquid. Once the DI water is drained to a predetermined level, below the microelectronic devices for example, thequick dump drain62 may be opened to rapidly remove the remaining DI water. Once the DI water is substantially drained from theimmersion vessel12, drying gas, such as heated N2, is preferably delivered to the immersion vessel by the

gas distribution devices

22,24, and26 with or without delivery of cleaning enhancement substance. After a predetermined drying time, the drying gas is turned off, thelid18 may be opened, and thecassette16 may be removed.

Numerous characteristics and advantages of the invention meant to be described by this document have been set forth in the foregoing description. It is to be understood, however, that while particular forms or embodiments of the invention have been illustrated, various modifications, including modifications to shape, and arrangement of parts, and the like, can be made without departing from the spirit and scope of the invention.

Claims

1. A method for processing at least one microelectronic device comprising:

immersing at least a portion of at least one microelectronic device into a liquid bath provided within a vessel for performing a treatment on at least the immersed portion thereof;

separating the microelectronic device completely from the liquid bath by replacing said liquid with a gas environment adjacent to the microelectronic device; and

delivering a cleaning enhancement substance during said replacing, said cleaning enhancement substance causing a concentration gradient of said cleaning enhancement substance in liquid at an interface between the surface of the microelectronic device and the liquid bath to enhance fluid flow of from the microelectronic device surface,

wherein the delivery of the cleaning enhancement substance is continued after said replacing step is complete relative to the microelectronic device.

2. The method ofclaim 1, wherein the separation is performed by lowering the liquid level within the vessel.

3. The method ofclaim 2, wherein the liquid level is lowered below the at least one microelectronic device and the delivery of cleaning enhancement substance is continued while the liquid level is lowered further.

4. The method ofclaim 3, wherein a quick dump of remaining liquid is conducted at a point after the liquid level is lowered below the at least one microelectronic device while cleaning enhancement substance is delivered.

5. The method ofclaim 4, further comprising a step of drying the at least one microelectronic device by supplying at least one gas stream directed within the vessel to dry a surface of the at least one microelectronic device, and wherein delivery of cleaning enhancement substance is continued for at least an initial portion of the drying step.

6. The method ofclaim 1, wherein the delivery of the cleaning enhancement substance is varied during said replacing step.

7. The method ofclaim 6, wherein the delivery of cleaning enhancement substance is varied by changing a flow rate of delivery of cleaning enhancement substance from a first flow rate to a second flow rate.

8. The method ofclaim 7, wherein delivery of cleaning enhancement substance is further varied by changing a flow rate of delivery of cleaning enhancement substance from the second flow rate to a third flow rate.

9. The method ofclaim 8, wherein at least one flow rate is varied by increasing the flow rate.

10. A method of drying a plurality of microelectronic devices, the method comprising the steps of:

supporting a plurality of microelectronic devices in a drying environment such that the microelectronic devices are provided in a substantially directional arrangement at a predetermined spacing; and

directing plural gas streams toward the arranged microelectronic devices such that at least one gas stream is directed between adjacent microelectronic devices of the arranged plurality of microelectronic devices.

11. The method ofclaim 10 further including a step of separating the plurality of microelectronic devices from a processing fluid wherein the plurality of microelectronic devices are provided in a the same arrangement at a predetermined spacing.

12. A method of drying a plurality of microelectronic devices, the method comprising the steps of:

supporting a plurality of microelectronic devices in a drying environment such that the microelectronic devices are provided in a substantially directional arrangement at a predetermined spacing arranged;

directing a first gas curtain toward the arrangement of microelectronic devices at a first angle of incidence with respect to the arrangement of microelectronic devices;

directing a second gas curtain at an angle of incidence with respect to the arrangement of microelectronic devices that is different from the angle of incidence of the first gas curtain; and

directing a third gas curtain at an angle of incidence with respect to the arrangement of microelectronic devices that is different from the angle of incidence of the first gas curtain.

13. An immersion processing apparatus for processing a plurality of microelectronic devices, the apparatus comprising:

a vessel for containing a liquid immersion bath and for receiving a plurality microelectronic devices to be positioned within the immersion vessel by support structure providing the microelectronic devices in a substantially directional arrangement at a predetermined spacing; and

a gas dispenser operatively positioned relative to the vessel and connectable to a pressurized supply of drying gas and for providing plural gas streams to a plurality of arranged microelectronic devices when positioned within the vessel such that at least one gas stream will be directed between adjacent microelectronic devices of the plurality of arranged microelectronic devices.

14. The apparatus ofclaim 13, wherein the gas dispenser provides a gas curtain to a plurality of arranged microelectronic devices as they are positionable within the vessel such that the gas curtain can be provided at a predetermined angle of incidence with respect to the arrangement of the microelectronic devices when positioned within the immersion vessel.

15. The apparatus ofclaim 14, wherein the gas curtain comprises a plurality of gas streams.

16. The apparatus ofclaim 15, wherein the plurality of gas streams are provided so that at least one gas stream is directed between adjacent microelectronic devices of the plurality of microelectronic devices.

17. An apparatus for drying a plurality of microelectronic devices, the apparatus comprising:

a vessel for containing a liquid immersion bath;

a support means for positioning microelectronic devices in a substantially directional arrangement at a predetermined spacing within the immersion vessel;

a first gas dispenser operatively positioned with respect to the support device and connectable to a pressurized supply of drying gas and for directing a first gas curtain at a first angle of incidence with respect to the arrangement of the microelectronic devices when positioned on the support means;

a second gas dispenser operatively positioned adjacent to and spaced from the first gas dispenser and connectable to a pressurized supply of drying gas and for directing a second gas curtain at a second angle of incidence with respect to the arrangement of microelectronic devices that is different from the first angle of incidence of the first gas curtain; and

a third gas dispenser operatively positioned adjacent to and spaced from the first gas dispenser and opposite the second gas dispenser and connectable to a pressurized supply of drying gas and for directing a third gas curtain at a third angle of incidence with respect to the reference plane that is different from the first angle of incidence of the first gas curtain.

18. The apparatus ofclaim 17, wherein the first gas dispenser is located centrally of both the second and third gas dispensers.