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US20070166546A1 - Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same - Google Patents

Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same
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Publication number
US20070166546A1
US20070166546A1US11/587,250US58725006AUS2007166546A1US 20070166546 A1US20070166546 A1US 20070166546A1US 58725006 AUS58725006 AUS 58725006AUS 2007166546 A1US2007166546 A1US 2007166546A1
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United States
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particles
metal
carbon
metal oxide
friction materials
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Abandoned
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US11/587,250
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Shigeru Ichikawa
Sumio Kamiya
Koji Yamada
Hironori Sasaki
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Toyota Motor Corp
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Assigned to TOYOTA JIDOSHA KABUSHIKI KAISHAreassignmentTOYOTA JIDOSHA KABUSHIKI KAISHAASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: ICHIKAWA, SHIGERU, KAMIYA, SUMIO, SASAKI, HIRONORI, YAMADA, KOJI
Publication of US20070166546A1publicationCriticalpatent/US20070166546A1/en
Priority to US12/842,787priorityCriticalpatent/US8058197B2/en
Abandonedlegal-statusCriticalCurrent

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Abstract

This invention provides carbon composite materials, which comprise metal carbide particles, at least the particle surfaces or the entirety of which are metal carbides, synthesized in situ from a metal source, i.e., at least one member selected from the group comprising metal particles, metal oxide particles, and composite metal oxide particles, and a carbon source, i.e., a thermosetting resin, dispersed in a carbon, carbon fiber, or carbon/carbon fiber matrix, and contain no free metal particles. This invention also provides a method for producing such composite carbon materials, which enables the production of carbon composite materials having a high coefficient of friction, high thermostability, and abrasion resistance.

Description

Claims (18)

US11/587,2502004-04-232005-04-22Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the sameAbandonedUS20070166546A1 (en)

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US12/842,787US8058197B2 (en)2004-04-232010-07-23Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same

Applications Claiming Priority (3)

Application NumberPriority DateFiling DateTitle
JP2004128360AJP5113982B2 (en)2004-04-232004-04-23 Method for producing carbon composite material in which metal carbide particles are dispersed
JP2004-1283602004-04-23
PCT/JP2005/008268WO2005102961A1 (en)2004-04-232005-04-22Composite carbon material having metal carbide particles dispersed therein and method for preparation thereof

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US12/842,787DivisionUS8058197B2 (en)2004-04-232010-07-23Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same

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US20070166546A1true US20070166546A1 (en)2007-07-19

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US11/587,250AbandonedUS20070166546A1 (en)2004-04-232005-04-22Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same
US12/842,787Expired - Fee RelatedUS8058197B2 (en)2004-04-232010-07-23Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same

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US (2)US20070166546A1 (en)
EP (2)EP2216310A1 (en)
JP (1)JP5113982B2 (en)
KR (1)KR100818577B1 (en)
CN (1)CN100465135C (en)
WO (1)WO2005102961A1 (en)

Cited By (37)

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US20090028711A1 (en)*2006-03-202009-01-29Herbert HanriederMethod for the inductive high-frequency pressure welding of metallic structural elements using at least two different frequencies and component produced by said method
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US7842604B1 (en)2003-09-242010-11-30Novellus Systems, Inc.Low-k b-doped SiC copper diffusion barrier films
US7915166B1 (en)*2007-02-222011-03-29Novellus Systems, Inc.Diffusion barrier and etch stop films
US20110097593A1 (en)*2008-10-272011-04-28Taiho Kogyo Co., Ltd.Ptfe-based sliding material, bearing, and method for producing ptfe-based sliding material
US7968436B1 (en)2004-06-152011-06-28Novellus Systems, Inc.Low-K SiC copper diffusion barrier films
US7981777B1 (en)2007-02-222011-07-19Novellus Systems, Inc.Methods of depositing stable and hermetic ashable hardmask films
US7981810B1 (en)2006-06-082011-07-19Novellus Systems, Inc.Methods of depositing highly selective transparent ashable hardmask films
US8110493B1 (en)2005-12-232012-02-07Novellus Systems, Inc.Pulsed PECVD method for modulating hydrogen content in hard mask
US8124522B1 (en)2008-04-112012-02-28Novellus Systems, Inc.Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties
US8173537B1 (en)2007-03-292012-05-08Novellus Systems, Inc.Methods for reducing UV and dielectric diffusion barrier interaction
US8247332B2 (en)2009-12-042012-08-21Novellus Systems, Inc.Hardmask materials
US8435608B1 (en)2008-06-272013-05-07Novellus Systems, Inc.Methods of depositing smooth and conformal ashable hard mask films
US8563414B1 (en)2010-04-232013-10-22Novellus Systems, Inc.Methods for forming conductive carbon films by PECVD
US8664124B2 (en)2005-10-312014-03-04Novellus Systems, Inc.Method for etching organic hardmasks
US8962101B2 (en)2007-08-312015-02-24Novellus Systems, Inc.Methods and apparatus for plasma-based deposition
US9023731B2 (en)2012-05-182015-05-05Novellus Systems, Inc.Carbon deposition-etch-ash gap fill process
EP2886525A1 (en)*2013-12-182015-06-24Honeywell International Inc.Composite materials including ceramic particles and methods of forming the same
US9234276B2 (en)2013-05-312016-01-12Novellus Systems, Inc.Method to obtain SiC class of films of desired composition and film properties
US9304396B2 (en)2013-02-252016-04-05Lam Research CorporationPECVD films for EUV lithography
US9320387B2 (en)2013-09-302016-04-26Lam Research CorporationSulfur doped carbon hard masks
US9337068B2 (en)2012-12-182016-05-10Lam Research CorporationOxygen-containing ceramic hard masks and associated wet-cleans
US9362133B2 (en)2012-12-142016-06-07Lam Research CorporationMethod for forming a mask by etching conformal film on patterned ashable hardmask
US9589799B2 (en)2013-09-302017-03-07Lam Research CorporationHigh selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9837270B1 (en)2016-12-162017-12-05Lam Research CorporationDensification of silicon carbide film using remote plasma treatment
US20180045260A1 (en)*2014-10-292018-02-15Goodrich CorporationSystem and Method for Ceramic Doping of Carbon Fiber Composite Structures
US10002787B2 (en)2016-11-232018-06-19Lam Research CorporationStaircase encapsulation in 3D NAND fabrication
US10211310B2 (en)2012-06-122019-02-19Novellus Systems, Inc.Remote plasma based deposition of SiOC class of films
US10297442B2 (en)2013-05-312019-05-21Lam Research CorporationRemote plasma based deposition of graded or multi-layered silicon carbide film
US10325773B2 (en)2012-06-122019-06-18Novellus Systems, Inc.Conformal deposition of silicon carbide films
US10832904B2 (en)2012-06-122020-11-10Lam Research CorporationRemote plasma based deposition of oxygen doped silicon carbide films
CN111995840A (en)*2019-11-182020-11-27西南大学 A kind of preparation method of new epoxy resin
US11049716B2 (en)2015-04-212021-06-29Lam Research CorporationGap fill using carbon-based films
CN113617355A (en)*2021-07-302021-11-09复旦大学Functional mesoporous material embedded with nano particles and in-situ embedding assembly method and application thereof
US11837441B2 (en)2019-05-292023-12-05Lam Research CorporationDepositing a carbon hardmask by high power pulsed low frequency RF
US12435412B2 (en)2019-08-302025-10-07Lam Research CorporationHigh density, modulus, and hardness amorphous carbon films at low pressure

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US8899939B2 (en)2009-12-232014-12-02General Electric CompanyProcess for producing a ceramic matrix composite article and article formed thereby
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US20150251960A1 (en)*2014-03-052015-09-10Honeywell International Inc.Densification of carbon-carbon composite material with copna resin
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US10000425B2 (en)*2016-03-212018-06-19Goodrich CorporationSystems and methods for carbon structures incorporating silicon carbide whiskers
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KR102137032B1 (en)*2017-05-102020-07-23엘지전자 주식회사A composition for carbon composite and a carbon heater manufactured by using the same
KR102004035B1 (en)2017-05-262019-07-25엘지전자 주식회사A carbon heating element
KR102078974B1 (en)*2019-08-282020-02-18도레이첨단소재 주식회사Manufacturing method of carbon papers having excellent thermal conductivity and carbon papers manufactured therefrom
CN111069612A (en)*2020-01-072020-04-28湖北友联制动装备有限公司Powder metallurgy material for high-speed train brake pad and preparation process of brake pad
CN111484017A (en)*2020-06-222020-08-04黑龙江冠瓷科技有限公司Method for preparing SiC nanoparticles based on silica microspheres @ C
FR3119389B1 (en)2021-01-292023-11-17Safran Landing Systems METHOD FOR DRYING AN IMPREGNATED BLANK AND METHOD FOR MANUFACTURING AND ASSOCIATED SYSTEM AND ASSEMBLY
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CN114315358B (en)*2021-12-272023-01-24海南大学Fully-compact binderless tungsten carbide ceramic and preparation method thereof
CN115947607B (en)*2022-12-272024-04-12湖南金博碳素股份有限公司Carbon/tungsten carbide composite material, preparation method thereof, fastener and application
CN115976434B (en)*2022-12-302024-07-23湖南金博碳素股份有限公司Carbon tungsten copper composite material, preparation method and application thereof, and electrode

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Cited By (51)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7842604B1 (en)2003-09-242010-11-30Novellus Systems, Inc.Low-k b-doped SiC copper diffusion barrier films
US7968436B1 (en)2004-06-152011-06-28Novellus Systems, Inc.Low-K SiC copper diffusion barrier films
US8664124B2 (en)2005-10-312014-03-04Novellus Systems, Inc.Method for etching organic hardmasks
US8110493B1 (en)2005-12-232012-02-07Novellus Systems, Inc.Pulsed PECVD method for modulating hydrogen content in hard mask
US20090028711A1 (en)*2006-03-202009-01-29Herbert HanriederMethod for the inductive high-frequency pressure welding of metallic structural elements using at least two different frequencies and component produced by said method
US7981810B1 (en)2006-06-082011-07-19Novellus Systems, Inc.Methods of depositing highly selective transparent ashable hardmask films
US7915166B1 (en)*2007-02-222011-03-29Novellus Systems, Inc.Diffusion barrier and etch stop films
US8669181B1 (en)2007-02-222014-03-11Novellus Systems, Inc.Diffusion barrier and etch stop films
US7981777B1 (en)2007-02-222011-07-19Novellus Systems, Inc.Methods of depositing stable and hermetic ashable hardmask films
US8173537B1 (en)2007-03-292012-05-08Novellus Systems, Inc.Methods for reducing UV and dielectric diffusion barrier interaction
US8962101B2 (en)2007-08-312015-02-24Novellus Systems, Inc.Methods and apparatus for plasma-based deposition
US8124522B1 (en)2008-04-112012-02-28Novellus Systems, Inc.Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties
US7820556B2 (en)2008-06-042010-10-26Novellus Systems, Inc.Method for purifying acetylene gas for use in semiconductor processes
US20100297853A1 (en)*2008-06-042010-11-25NovellusMethod for purifying acetylene gas for use in semiconductor processes
US8309473B2 (en)2008-06-042012-11-13Novellus Systems, Inc.Method for purifying acetylene gas for use in semiconductor processes
US20090305516A1 (en)*2008-06-042009-12-10Novellus Systems, Inc.Method for purifying acetylene gas for use in semiconductor processes
US9240320B1 (en)2008-06-272016-01-19Novellus Systems, Inc.Methods of depositing smooth and conformal ashable hard mask films
US8435608B1 (en)2008-06-272013-05-07Novellus Systems, Inc.Methods of depositing smooth and conformal ashable hard mask films
US8962143B2 (en)*2008-10-272015-02-24Taiho Kogyo Co., Ltd.PTFE-based sliding material, bearing, and method for producing PTFE-based sliding material
US20110097593A1 (en)*2008-10-272011-04-28Taiho Kogyo Co., Ltd.Ptfe-based sliding material, bearing, and method for producing ptfe-based sliding material
US20100151691A1 (en)*2008-12-122010-06-17Novellus Systems Inc.Method for improved thickness repeatability of pecvd deposited carbon films
US7955990B2 (en)2008-12-122011-06-07Novellus Systems, Inc.Method for improved thickness repeatability of PECVD deposited carbon films
US8846525B2 (en)2009-12-042014-09-30Novellus Systems, Inc.Hardmask materials
US8247332B2 (en)2009-12-042012-08-21Novellus Systems, Inc.Hardmask materials
US8563414B1 (en)2010-04-232013-10-22Novellus Systems, Inc.Methods for forming conductive carbon films by PECVD
US9023731B2 (en)2012-05-182015-05-05Novellus Systems, Inc.Carbon deposition-etch-ash gap fill process
US10211310B2 (en)2012-06-122019-02-19Novellus Systems, Inc.Remote plasma based deposition of SiOC class of films
US11264234B2 (en)2012-06-122022-03-01Novellus Systems, Inc.Conformal deposition of silicon carbide films
US10832904B2 (en)2012-06-122020-11-10Lam Research CorporationRemote plasma based deposition of oxygen doped silicon carbide films
US10325773B2 (en)2012-06-122019-06-18Novellus Systems, Inc.Conformal deposition of silicon carbide films
US9362133B2 (en)2012-12-142016-06-07Lam Research CorporationMethod for forming a mask by etching conformal film on patterned ashable hardmask
US10192759B2 (en)2012-12-142019-01-29Lam Research CorporationImage reversal with AHM gap fill for multiple patterning
US9337068B2 (en)2012-12-182016-05-10Lam Research CorporationOxygen-containing ceramic hard masks and associated wet-cleans
US9618846B2 (en)2013-02-252017-04-11Lam Research CorporationPECVD films for EUV lithography
US9304396B2 (en)2013-02-252016-04-05Lam Research CorporationPECVD films for EUV lithography
US10472714B2 (en)2013-05-312019-11-12Novellus Systems, Inc.Method to obtain SiC class of films of desired composition and film properties
US9234276B2 (en)2013-05-312016-01-12Novellus Systems, Inc.Method to obtain SiC class of films of desired composition and film properties
US10297442B2 (en)2013-05-312019-05-21Lam Research CorporationRemote plasma based deposition of graded or multi-layered silicon carbide film
US9589799B2 (en)2013-09-302017-03-07Lam Research CorporationHigh selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9320387B2 (en)2013-09-302016-04-26Lam Research CorporationSulfur doped carbon hard masks
EP2886525A1 (en)*2013-12-182015-06-24Honeywell International Inc.Composite materials including ceramic particles and methods of forming the same
US9272950B2 (en)2013-12-182016-03-01Honeywell International Inc.Composite materials including ceramic particles and methods of forming the same
US20180045260A1 (en)*2014-10-292018-02-15Goodrich CorporationSystem and Method for Ceramic Doping of Carbon Fiber Composite Structures
US11049716B2 (en)2015-04-212021-06-29Lam Research CorporationGap fill using carbon-based films
US10580690B2 (en)2016-11-232020-03-03Lam Research CorporationStaircase encapsulation in 3D NAND fabrication
US10002787B2 (en)2016-11-232018-06-19Lam Research CorporationStaircase encapsulation in 3D NAND fabrication
US9837270B1 (en)2016-12-162017-12-05Lam Research CorporationDensification of silicon carbide film using remote plasma treatment
US11837441B2 (en)2019-05-292023-12-05Lam Research CorporationDepositing a carbon hardmask by high power pulsed low frequency RF
US12435412B2 (en)2019-08-302025-10-07Lam Research CorporationHigh density, modulus, and hardness amorphous carbon films at low pressure
CN111995840A (en)*2019-11-182020-11-27西南大学 A kind of preparation method of new epoxy resin
CN113617355A (en)*2021-07-302021-11-09复旦大学Functional mesoporous material embedded with nano particles and in-situ embedding assembly method and application thereof

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Publication numberPublication date
EP1748036A1 (en)2007-01-31
EP1748036B1 (en)2017-07-19
CN1946655A (en)2007-04-11
US20100292069A1 (en)2010-11-18
JP2005306688A (en)2005-11-04
WO2005102961A1 (en)2005-11-03
EP2216310A1 (en)2010-08-11
KR20070012494A (en)2007-01-25
JP5113982B2 (en)2013-01-09
CN100465135C (en)2009-03-04
KR100818577B1 (en)2008-04-02
EP1748036A4 (en)2008-03-12
US8058197B2 (en)2011-11-15

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