US20070066038A1 - Fast gas switching plasma processing apparatus - Google Patents

Abstract

A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.

Description

RELATED APPLICATIONS
• This is a Continuation-In-Part of co-pending prior U.S. application Ser. No. 10/835,175 entitled “GAS DISTRIBUTIONS SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES”, filed on Apr. 30, 2004, which is hereby incorporated by reference.
BACKGROUND
• Semiconductor structures are processed in plasma processing apparatuses including a plasma processing chamber, a gas source that supplies process gas into the chamber, and an energy source that produces plasma from the process gas. Semiconductor structures are processed in such apparatuses by techniques including dry etching processes, deposition processes, such as chemical vapor deposition (CVD), physical vapor deposition, or plasma-enhanced chemical vapor deposition (PECVD) of metal, dielectric and semiconductor materials and resist stripping processes. Different process gases are used for these processing techniques, as well as processing different materials of semiconductor structures.
SUMMARY
• To achieve the foregoing and in accordance with the purpose of the present invention, a plasma wafer processing tool is provided. A plasma chamber with a plasma confinement zone with a volume and at least one electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one of the first gas and the second gas in the plasma zone with the other of the first gas and the second gas within a period of less than 1 s, wherein a first plasma formed in the plasma zone from the first gas provides a first impedance load and wherein a second plasma formed in the plasma zone from the second gas provides a second impedance load different than the first impedance load. A first frequency tuned RF power source for providing power to the at least one electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power.
• In another manifestation of the invention a plasma processing apparatus is provided. A plasma processing chamber including a showerhead electrode assembly having the inner and outer zones and an interior volume of about ½ liter to 4 liters is provided. A gas distribution system is in fluid communication with the inner and outer zones of the showerhead electrode assembly, wherein the gas distribution system is operable to substantially replace a first process gas or a second process gas in the plasma confinement zone with the other of the first process gas or the second process gas within a period of less than about 1 s. The gas distribution comprises a gas supply system, which provides the first process gas and the second process gas, a flow control system in fluid communication with the gas supply system, which splits a flow of the first process gas into an inner zone flow of the first process gas and an outer zone flow of the first process gas and which splits a flow of the second process gas into an inner zone flow of the second process gas and an outer zone flow of the second process gas, and a switching section, which is in fluid connection between the flow control system and the inner zone and outer zone of the gas distribution member, wherein the switching section switches flow to the inner zone of the gas distribution member between the inner zone flow of the first process gas and the inner zone of the second process gas and wherein the switching section switches flow to the outer zone of the gas distribution member between the outer zone flow of the first process gas and the outer zone flow of the second process gas. A first frequency tuned RF power source for provides power to the plasma processing apparatus in a first frequency range wherein the first frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power. A second frequency tuned RF power source for provides power to the plasma processing apparatus in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power.
• In another manifestation of the invention, a method of processing a semiconductor structure in a plasma processing chamber is provided. a) A first process gas is supplied into the plasma processing chamber while diverting a second process gas to a bypass-line, the plasma processing chamber containing a semiconductor substrate including at least one layer and a patterned resist mask overlying the layer. b) The first process gas is energized to produce a first plasma with a first impedance load and (i) etching at least one feature in the layer or (ii) forming a polymer deposit on the mask. c) A first RF power source is frequency tuned to a first frequency to match the first impedance load. d) A second RF power source is frequency tuned to a second frequency different than the first frequency to match the first impedance load. e) The flows of the first and second process gases are switched so that the second process gas is supplied into the plasma processing chamber while diverting the first process gas to the by-pass line, the first process gas being substantially replaced in a plasma confinement zone of the plasma processing chamber by the second process gas within a period of less than about 1 s. f) The second process gas is energized to produce a second plasma with a second impedance load different from the first impedance load and (iii) etching the at least one feature in the layer or (iv) forming a polymer deposit on the layer and the mask. g) The first RF power source is frequency tuned to a third frequency different than the first and second frequencies to match the second impedance load. h) The second RF power source is frequency tuned to a fourth frequency different than the first, second, and third frequencies to match the second impedance load. i) The flows of the first and second process gases are switched so that the first process gas is supplied into the plasma processing chamber while diverting the second process gas to the by-pass line, the second process gas being substantially replaced in the plasma confinement zone of the plasma processing chamber by the first process gas within a period of less than about 1 s. j) Steps b)-i) are repeated a plurality of times with the substrate.
• These and other features of the present invention will be described in more details below in the detailed description of the invention and in conjunction with the following figures.
BRIEF DESCRIPTION OF THE DRAWING FIGURES
• The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:
• FIG. 1 is a sectional view of an exemplary embodiment of a plasma processing apparatus that preferred embodiments of the gas distribution system can be used with.
• FIG. 2 illustrates a preferred embodiment of the gas distribution system.
• FIG. 3 depicts a preferred embodiment of a gas supply section of the gas distribution system.
• FIG. 4 depicts a preferred embodiment of a flow control section of the gas distribution system.
• FIG. 5 depicts a first preferred embodiment of a gas switching section of the gas distribution system.
• FIG. 6 depicts a second preferred embodiment of the gas switching section of the gas distribution system.
• FIG. 7 depicts a third preferred embodiment of the gas switching section of the gas distribution system.
DETAILED DESCRIPTION
• Plasma processing apparatuses for processing semiconductor materials, such as semiconductor devices formed on semiconductor substrates, e.g., silicon wafers, include a plasma processing chamber and a gas distribution system that supplies process gas into the plasma processing chamber. The gas distribution system can distribute gas to a single zone or multiple zones across the surface of a substrate during plasma processing. The gas distribution system can include flow controllers to control the flow ratio of the same or different process gas, or gas mixture, to the zones, thereby allowing in-process adjustment of across-substrate uniformity of gas flow and gas composition.
• Although multiple-zone gas distribution systems can provide improved flow control as compared to a single-zone system, it may be desirable to provide such systems with an arrangement that allows substrate processing operations in which the gas composition and/or the gas flow can be changed within a short period of time.
• A gas distribution system is provided for supplying different gas compositions and/or flow ratios to a chamber. In a preferred embodiment, the gas distribution system is adapted to be in fluid communication with an interior of a vacuum chamber, such as a plasma processing chamber of a plasma processing apparatus, and provide the capability of supplying different gas chemistries and/or gas flow rates to the vacuum chamber during processing operations. The plasma processing apparatus can be a low-density, medium-density or high-density plasma reactor including an energy source that uses RF energy, microwave energy, magnetic fields, or the like to produce plasma. For example, the high-density plasma can be produced in a transformer coupled plasma (TCP™) reactor, also known as an inductively coupled plasma reactor, an electron-cyclotron resonance (ECR) plasma reactor, a capacitive-type discharge, or the like. Exemplary plasma reactors that preferred embodiments of the gas distribution system can be used with include Exelan™ plasma reactors, such as the 2300 Excelan™ plasma reactor, available from Lam Research Corporation, located in Fremont, Calif. During plasma etching processes, multiple frequencies can be applied to a substrate support incorporating an electrode and an electrostatic chuck. Alternatively, in dual-frequency plasma reactors, different frequencies can be applied to the substrate support and an electrode, such as a showerhead electrode, spaced from the substrate.
• A preferred embodiment of the gas distribution system can supply a first gas into the interior of a vacuum chamber, such as a plasma processing chamber, via a single zone or multiple zones, preferably at least an inner zone and an outer zone of a gas distribution member adjacent to an exposed surface of a substrate to be processed. The inner and outer zones are radially spaced, and preferably, flow insulated, from each other in the plasma processing chamber. The gas distribution system can simultaneously divert a second gas that is different from the first gas to a vacuum chamber by-pass line. The by-pass line can be in fluid communication with a vacuum pump, or the like. In a preferred embodiment, the first gas is a first process gas and the second gas is a different process gas. For example, the first gas can be a first etch gas chemistry or deposition gas chemistry, and the second gas can be a different etch gas chemistry or deposition gas chemistry. The gas distribution system can simultaneously provide different controlled flow rates of the first gas to the inner zone and the outer zone, respectively, while the second gas is diverted to the by-pass line, and vice versa. By diverting one of the gases to the by-pass line, change over of the gas supplied to the vacuum chamber can be achieved within a short period of time.
• The gas distribution system includes switching devices that allow gas switching, or gas change over, in a short period of time between first and second gases supplied to an interior of a vacuum chamber that includes a single zone or includes multiple zones. For multiple-zone systems, the gas distribution system can supply the first gas to the inner zone and outer zone while the second gas is diverted to the by-pass line, and then switch the gas distributions within a short period of time so that the second gas is supplied to the inner zone and outer zone while the first gas is diverted to the by-pass line. The gas distribution system can alternately supply the first and second gases into the interior of the vacuum chamber, each for a desired period of time to allow quick change over between different processing operations that use different gas chemistries, e.g., alternating steps of a method of processing a semiconductor device. In a preferred embodiment, the method steps can be different etch steps, e.g., a faster etch step, such as a main etch, and a relatively slower etch step, such as an over etch step; an etch step and a material deposition step; or different material deposition steps that deposit different materials onto a substrate.
• In a preferred embodiment of the gas distribution system, a volume of a gas composition in a confined region within a vacuum chamber, preferably a plasma confinement zone, can be replaced (i.e., flushed out) by another gas composition introduced into the vacuum chamber within a short period of time. Such gas replacement preferably can be achieved in less than about 1 s, more preferably within less than about 200 ms, by providing valves having a fast switching capability in the gas distribution system. The plasma confinement zone can have a gas volume of about ½ liter to about 4 liters for a plasma processing chamber for processing 200 mm or 300 mm wafers. The plasma confinement zone can be defined by a stack of confinement rings, such as disclosed in commonly-owned U.S. Pat. No. 5,534,751, which is hereby incorporated by reference in its entirety.
• FIG. 1 depicts an exemplary semiconductor materialplasma processing apparatus10 that embodiments of thegas distribution system100 can be used with. Theapparatus10 comprises a vacuum chamber orplasma processing chamber12 having an interior containing asubstrate support14 on which asubstrate16 is supported during plasma processing. Thesubstrate support14 includes a clamping device, preferably anelectrostatic chuck18, which is operable to clamp thesubstrate16 on thesubstrate support14 during processing. The substrate can be surrounded by focus rings and/or edge rings, ground extensions or other parts, such as parts disclosed in commonly-owned U.S. Patent Application Publication No. US 2003/0029567, which is incorporated herein by reference in its entirety.
• In a preferred embodiment, theplasma processing chamber12 includes a plasma confinement zone having a volume of about 12 liter to about 4 liters, preferably about 1 liter to about 3 liters. For example, theplasma processing chamber12 can include a confinement ring arrangement, such as disclosed in commonly-owned U.S. Pat. No. 5,534,751, which is incorporated herein by reference in its entirety, to define the plasma confinement zone. The gas distribution system can replace such a volume of gas in the plasma confinement zone with another gas within a period of less than about 1 s, preferably in less than about 200 ms, without substantial back diffusion. A confinement mechanism, such as confinement rings120, can limit the fluid communication from the plasma volume to portions of the interior of theplasma processing chamber12 that are outside of the plasma volume.
• Thesubstrate16 may include a base material, such as a silicon wafer; an intermediate layer of a material that is to be processed, e.g., etched, over the base material; and a masking layer over the intermediate layer. The intermediate layer may be of a conductive, dielectric, or semiconductive material. The masking layer can be patterned photoresist material having an opening pattern for etching desired features, e.g., holes, vias and/or trenches, in the intermediate layer and/or one or more other layers. The substrate can include additional layers of conductive, dielectric or semiconductive materials between the base layer and the masking layer, depending on the type of semiconductor device formed on the base material.
• Exemplary dielectric materials that can be processed are, for example, doped silicon oxide, such as fluorinated silicon oxide; un-doped silicon oxide, such as silicon dioxide; spin-on glass; silicate glasses; doped or un-doped thermal silicon oxide; and doped or un-doped TEOS deposited silicon oxide. Such dielectric materials can overlie a conductive or semiconductive layer, such as polycrystalline silicon; metals, such as aluminum, copper, titanium, tungsten, molybdenum and their alloys; nitrides, such as titanium nitride; and metal suicides, such as titanium silicide, tungsten silicide and molybdenum silicide.
• The exemplaryplasma processing apparatus10 shown inFIG. 1 includes a showerhead electrode assembly having asupport plate20 forming a wall of the plasma chamber, and ashowerhead22 attached to the support plate. A baffle assembly is located between theshowerhead22 and thesupport plate20 to uniformly distribute process gas to abackside28 of the showerhead. The baffle assembly can include one or more baffle plates. In the embodiment, the baffle assembly includesbaffle plates30A,30B, and30C.Open plenums48A,48B and48C are defined between thebaffle plates30A,30B and30C; and between thebaffle plate30C andshowerhead22. Thebaffle plates30A,30B and30C andshowerhead22 include through passages for flowing process gas into the interior ofplasma processing chamber12.
• A first frequency tunedRF power source104 is controllably connected to acontroller500 and provides power to theshowerhead electrode22 through a firstmechanical match box106. The first frequency tunedRF power source104 provides a variable frequency, which in this embodiment ranges from 1.7 MHz to 2.2 MHz, so that 2 MHz lies within the variable frequency range The first frequency tuned RF power source is formed to receive and measure output power and reflected RF power and to vary the frequency in the frequency range of 1.7 MHz to 2.2 MHz to minimize reflected RF power from the first frequency tunedRF power source104.
• A second frequency tunedRF power source108 is controllably connected to acontroller500 and provides power to theshowerhead electrode22 through a secondmechanical match box110. The second frequency tunedRF power source108 provides a variable frequency, which in this embodiment ranges from 26.7 MHz to 27.2 MHz, so that 27 MHz lies within the variable frequency range. The second frequency tuned RF power source is formed to receive and measure output power and reflected RF power and to vary the frequency in the frequency range of 26.7 MHz to 27.2 MHz to minimize reflected RF power from the second frequency tunedRF power source108.
• A third frequency tunedRF power source112 is controllably connected to acontroller500 and provides power to theshowerhead electrode22 through a thirdmechanical match box114. The third frequency tunedRF power source112 provides a variable frequency, which in this embodiment ranges from 59.7 MHz to 60.2 MHz, so that 60 MHz lies within the variable frequency range. The third frequency tunedRF power source112 is formed to receive and measure output power and reflected RF power and to vary the frequency in the frequency range of 59.7 MHz to 60.2 MHz to minimize reflected RF power from the third frequency tunedRF power source112.
• In this example, the first, second, and third frequency tuned RF power sources vary the frequency over a range of 0.5 MHz to provide RF tuning. In other embodiments, the frequency tuned RF power sources vary the frequency over a range of less than 2 MHz. More preferably, the frequency tuned RF power sources vary the frequency over a range of less than 1 MHz. The tuning range should be large enough to minimize reflected power and yet small enough to allow fast tuning.
• In the embodiment, the plenum between theplate20 and thebaffle plate30A and theplenums48A,48B and48C between thebaffle plates30A,30B and30C are divided into aninner zone42 and anouter zone46 by seals38a,38b,38cand38d, such as O-rings. Theinner zone42 andouter zone46 can be supplied process gas having different respective gas chemistries and/or flow rates by thegas distribution system100, preferably under control of thecontroller500. Gas is supplied from an innerzone gas supply40 into theinner zone42, and gas is supplied from an outerzone gas supply44 into an annular channel44aand then into theouter zone46. The process gas flows through the passages in thebaffle plates30A,30B and30C and theshowerhead22 and into the interior of theplasma processing chamber12.
• In other preferred embodiments, theplasma processing apparatus10 can include a gas injector system for injecting process gas into the plasma processing chamber. For example, the gas injector system can have a configuration as disclosed in commonly-owned U.S. patent application Ser. No. 09/788,365, U.S. patent application Ser. No. 10/024,208, U.S. Pat. No. 6,013,155, or U.S. Pat. No. 6,270,862, each of which is incorporated herein by reference in its entirety.
• The process gas is energized into the plasma state in theplasma processing chamber12 by a power source, such as an RFsource driving electrode22, or a power source driving an electrode in thesubstrate support14. The RF power applied to theelectrode22 can be varied when different gas compositions are supplied into theplasma processing chamber12, preferably within a time period of less than about 1 s, more preferably less than about 200 ms. The change in gas compositions can change the load or impedance from the gas. The first, second, and thirdRF power sources104,108,112 may have mechanical impedance matching devices, but such devices may not be fast enough to match the changing impedance when different gas compositions are provided for time periods less than about 1 s. Therefore, the first, second, and third RF power sources have variable frequencies and are able to measure output and reflected RF power and to vary the frequency to minimize reflected RF power. The minimizing the reflected RF power matches the impedance of the load from the plasma in the processing chamber with the RF power sources through a matchbox.
• FIG. 2 shows a preferred embodiment in which thegas distribution system100 includes agas supply section200, aflow control section300, and agas switching section400 in fluid communication with each other. Thegas distribution system100 preferably also includes a controller500 (FIG. 1), which is connected in control communication to control operation of thegas supply section200,flow control section300 andgas switching section400.
• In thegas distribution system100, thegas supply section200 can supply different gases, such as first and second process gases, to theflow control section300 via respective first andsecond gas lines235,245. The first and second gases can have different compositions and/or gas flow rates from each other.
• Theflow control section300 is operable to control the flow rate, and optionally also to adjust the composition, of different gases that can be supplied to theswitching section400. Theflow control section300 can provide different flow rates and/or chemistries of the first and second gases to theswitching section400 viagas passages324,326 and364,366, respectively. In addition, the flow rate and/or chemistry of the first gas and/or second gas that is supplied to the plasma processing chamber12 (while the other gas is diverted to by-pass line50, which can be in fluid communication with a vacuum pumping system, such as between a turbo pump and a roughing pump) can be different for theinner zone42 and theouter zone46. Accordingly, theflow control section300 can provide desired gas flows and/or gas chemistries across thesubstrate16, thereby enhancing substrate processing uniformity.
• In thegas distribution system100, theswitching section400 is operable to switch from the first gas to the second gas within a short period of time to allow the first gas to be replaced by the second gas in a single zone or multiple zones, e.g., theinner zone42 and theouter zone46, while simultaneously diverting the first gas to the by-pass line, or vice versa. Thegas switching section400 preferably can switch between the first and second gases without the occurrence of undesirable pressure surges and flow instabilities in the flow of either gas. If desired, thegas distribution system100 can maintain a substantially constant sequential volumetric flow rate of the first and second gases through theplasma processing chamber12.
• FIG. 3 shows a preferred embodiment of thegas supply section200 of thegas distribution system100. Thegas supply section200 is preferably connected to thecontroller500 to control operation of flow control components, such as valves and flow controllers, to allow control of the composition of two or more gases that can be supplied by thegas supply section200. In the embodiment, thegas supply section200 includesmultiple gas sources202,204,206,208,210,212,214 and216, each being in fluid communication with thefirst gas line235 and thesecond gas line245. As such, thegas supply section200 can supply many different desired gas mixtures to theplasma processing chamber12. The number of gas sources included in thegas distribution system100 is not limited to any particular number of gas sources, but preferably includes at least two different gas sources. For example, thegas supply section200 can include more than or less than the eight gas sources included in the embodiment shown inFIG. 3. For example, thegas supply section200 can include two, three, four, five, ten, twelve, sixteen, or more gas sources. The different gases that can be provided by the respective gas sources include individual gases, such as O₂, Ar, H₂, Cl₂, N₂and the like, as well as gaseous fluorocarbon and/or fluorohydrocarbon compounds, such as CF₄, CH₃F and the like. In one preferred embodiment, the plasma processing chamber is an etch chamber and the gas sources202-216 can supply Ar, O₂, N₂, Cl₂, CH₃, CF₄, C₄F₈and CH₃F or CHF₃(in any suitable order thereof). The particular gases supplied by the respective gas sources202-216 can be selected based on the desired process that is to be performed in theplasma processing chamber12, e.g., particular dry etching and/or material deposition processes. Thegas supply section200 can provide broad versatility regarding the choice of gases that can be supplied for performing etching processes and/or material deposition processes.
• Thegas supply section200 preferably also includes at least one tuning gas source to adjust the gas composition. The tuning gas can be, e.g., O₂, an inert gas, such as argon, or a reactive gas, such as a fluorocarbon or fluorohydrocarbon gas, e.g., C₄F₈. In the embodiment shown inFIG. 3, thegas supply section200 includes a firsttuning gas source218 and a secondtuning gas source219. As described below, the firsttuning gas source218 and secondtuning gas source219 can supply tuning gas to adjust the composition of the first and/or second gas supplied to thegas switching section400.
• In the embodiment of thegas supply section200 shown inFIG. 3, aflow control device240 preferably is disposed in each of thegas passages222,224,226,228,230,232,234 and236 in fluid communication with thegas sources202,204,206,208,210,212,214 and216, respectively, and also in thegas passages242,244 in fluid communication with the firsttuning gas source218 and the secondtuning gas source219, respectively. Theflow control devices240 are operable to control the flow of the gas supplied by the associated gas sources202-216 and218,219. Theflow control devices240 preferably are mass flow controllers (MFCs).
• In the embodiment shown inFIG. 3,valves250,252 are located along the gas passages downstream of each of the gas sources202-216. Thevalves250,252 can be selectively opened or closed, preferably under control of thecontroller500, to allow different gas mixtures to be flowed to thefirst gas line235 and/or thesecond gas line245. For example, by opening thevalves252 associated with one or more of the gas sources202-216 (while the remainingvalves252 associated with the other ones of the gas sources202-216 are closed), a first gas mixture can be supplied to thefirst gas line235. Likewise, by opening thevalves250 associated with one or more of the other gas sources202-216 (while the remainingvalves250 associated with the other ones of the gas sources202-216 are closed), a second gas mixture can be supplied to thesecond gas line245. Accordingly, various mixtures and mass flow rates of the first and second gases can be provided to thefirst gas line235 and thesecond gas line245 by controlled operation of thegas supply section200.
• In a preferred embodiment, thegas supply section200 is operable to provide a continuous flow of the first and second gases via thefirst gas line235 and thesecond gas line245, respectively. The first gas or the second gas is flowed to theplasma processing chamber12 while the other gas is diverted to the by-pass line. The by-pass line can be connected to a vacuum pump, or the like. By continuously flowing both of the first and second gases, thegas distribution system100 can achieve rapid change over of the gas flow.
• FIG. 4 shows a preferred embodiment of theflow control section300 of thegas distribution system100. Theflow control section300 includes a firstflow control section305 in fluid communication with thefirst gas line235 from thegas supply section200, and a secondflow control section315 in fluid communication with thesecond gas line245 from thegas supply section200. Theflow control section300 is operable to control the ratio of the first gas supplied to theinner zone42 andouter zone46, respectively, while the second gas is diverted to the by-pass line, and to control the ratio of the second gas supplied to theinner zone42 andouter zone46, respectively, while the first gas is diverted to the by-pass line. The firstflow control section305 divides the flow of the first gas introduced at thefirst gas line235 into two separate outlet flows of the first gas, and the secondflow control section315 divides the flow of the second gas introduced at thesecond gas line245 into two separate outlet flows of the second gas. The firstflow control section305 includes first andsecond gas passages324,326 in fluid communication with theinner zone42 andouter zone46, respectively, via theswitching system400, and the secondflow control section315 includes first andsecond gas passages364,366 in fluid communication with theinner zone42 andouter zone46, respectively, via theswitching system400.
• In a preferred arrangement, the firstflow control section305 and the secondflow control section315 each include at least two flow restrictors. Each flow restrictor preferably has a fixed restriction size for gas flow through it. The flow restrictors are preferably orifices. The flow restrictors restrict gas flow and maintain an approximately constant gas pressure in a region of the gas passages upstream of and proximate the orifices. Each of the firstflow control section305 and the secondflow control section315 preferably includes a network of orifices, e.g., two, three, four, five or more orifices, each preferably having a different cross-sectional restriction size, e.g., a different diameter or a different cross-sectional area. The restriction sizes of the orifices are smaller than the cross-sectional areas of the other portions of the gas flow path of thegas distribution system100. The orifices are preferably sonic orifices. The gas flows are preferably operated at the critical flow regime in theflow control section300 so that the flow conductance of a given orifice is determined solely by its restriction size and upstream pressure. As the flow conductance of an orifice increases, the pressure drop across the orifice to achieve a given flow rate through the orifice decreases.
• In the embodiment shown inFIG. 4, the first and secondflow control sections305,315 each include fiveorifices330,332,334,336 and338. For example, theorifices330,332,334,336 and338 can have relative restriction sizes, e.g., diameters, of one, two, four, eight, and sixteen, respectively. Accordingly, when gas flow occurs through all five orifices330-338, the four orifices330-336 have approximately the same total conductance as that of thesingle orifice338. Alternatively, up to three of the four orifices330-336 can be opened to provide different ratios of the total conductance of the orifices330-336 as compared to the conductance of theorifice338, in order to supply different ratios of the first gas flow and the second gas flow to theinner zone42 and theouter zone46.
• Another embodiment can include a different number of orifices, e.g., a total of two orifices; including theorifice338 and a second orifice that replaces the multiple orifices330-336. The second orifice preferably has the same restriction size as theorifice338. In such embodiment, the flow ratio of the first gas and/or second gas supplied to theinner zone42 and theouter zone46 is approximately 1:1.
• Valves320 preferably are located upstream of each of the respective orifices330-338 to control the flow of the first and second gases to the orifices. For example, in the firstflow control section305 and/or the secondflow control section315, one or more of thevalves320 can be opened to allow flow of the first gas and/or second gas to one or more of the associated orifice(s)330-336, while theother valve320 is opened to allow flow of the first gas and/or the second gas to the orifice(s)338.
• In the firstflow control section305, the orifices330-336 are in fluid communication with thegas passage322. Thegas passage322 is divided into the first andsecond gas passages324,326, which are in fluid communication with the gas switching section. A pair ofvalves320 is located in the first andsecond gas passages324,326 to control flow of the first gas flowed through one or more of the orifices330-336 of the firstflow control section305 to theinner zone42 and/or theouter zone46. In an alternative embodiment, the pair ofvalves320 located along thegas passages324,326 can be replaced by a single, four-way valve.
• In the firstflow control section305, theorifice338 is arranged along thegas passage319. Thegas passage319 is divided intogas passages331,333, which are in fluid communication with the first andsecond gas passages324,326, respectively. A pair ofvalves320 is located in thegas passages331,333 to control flow of the first gas flowed through theorifice338 to the first andsecond gas passages324,326. In an alternative embodiment, the pair ofvalves320 located along thegas passages331,333 can be replaced by a single, four-way valve.
• In the secondflow control section315, a pair ofvalves320 is located along the first andsecond gas passages364,366 to control flow of the second gas flowed through one or more of the orifices330-336 to theinner zone42 and theouter zone46 of the plasma processing chamber. In an alternative embodiment, the pair ofvalves320 located along thegas passages364,366 can be replaced by a single, four-way valve.
• In the secondflow control section315, theorifice338 is arranged along thegas passage359. Thegas passage359 is divided into gas passages372,374, which are in fluid communication with the first andsecond gas passages364,366, respectively. A pair ofvalves320 is located in the gas passages372,374 to control flow of the second gas flowed through theorifice338 to the first and/orsecond gas passages364,366. In an alternative embodiment, the pair ofvalves320 located along the gas passages372,374 can be replaced by a single four-way valve.
• The orifices330-338 are included in theflow control section300 to prevent pressure surges and flow instabilities in the gas flow when thegas distribution system100 changes the gas flowed into theplasma processing chamber12 from the first gas to the second gas, and vice versa.
• In the embodiment shown inFIG. 4, thegas passage242 of the first tuning gas source218 (FIG. 3) is arranged to supply the first tuning gas to thefirst gas passage324 and/orsecond gas passage326 of the firstflow control section305 to adjust the first gas composition. Thegas passage244 of the second tuning gas source219 (FIG. 3) is arranged to supply the second tuning gas to thefirst gas passage364 and/orsecond gas passage366 of the secondflow control section315 to adjust the second gas composition. The first and second tuning gases can be the same tuning gas or different tuning gases.
• Aflow control device340, preferably an MFC, is arranged along thegas passage242.Valves320 are located along the gas passages337,339 to control flow of the first tuning gas into thegas passage326,324, respectively. In an alternative embodiment, the pair ofvalves320 located along the gas passages337,339 can be replaced by a single, four-way valve.
• Aflow control device340, preferably an MFC, is arranged along thegas passage244.Valves320 are located along the gas passages376,378 to control flow of the second tuning gas into thegas passages366,364, respectively. In an alternative embodiment, the pair ofvalves320 located along the gas passages376,378 can be replaced by a single, four-way valve.
• In the embodiment of theflow control section300 shown inFIG. 4, the firstflow control section305 and the secondflow control section315 include the same components arranged in the same configuration. However, in other preferred embodiments of thegas distribution system100, the first and secondflow control sections305,315 can have different components and/or different configurations from each other. For example, the first and secondflow control sections305,315 can include different numbers of orifices and/or orifices with different restriction sizes from each other.
• In thegas distribution system100, thegas switching system400 is in fluid communication with theflow control section300, and with the interior of the vacuum chamber and the by-pass line to which the first and second gases are flowed. A first preferred embodiment of thegas switching system400 is depicted inFIG. 5. Thegas switching system400 can alternately supply first and second gases to both theinner zone42 and theouter zone46 of theplasma processing chamber12. Thegas switching system400 is in fluid communication with thefirst gas passage324 and thesecond gas passage326 of the firstflow control section305, and with thefirst gas passage364 and thesecond gas passage366 of the secondflow control section315. Anorifice430 is arranged along each of thegas passages324,326,364 and366 to prevent undesirable pressure surges during change over of the first and second gases.
• Thefirst gas passage324 of the firstflow control section305 is divided intogas passages448,450; thesecond gas passage326 of the firstflow control section305 is divided intogas passages442,444; thefirst gas passage364 of the secondflow control section315 is divided intogas passages452,454; and thesecond gas passage366 of the secondflow control section315 is divided intogas passages456,458. In the embodiment, thegas passage442 is in fluid communication with theouter zone46 of theplasma chamber12, thegas passage448 is in fluid communication with theinner zone42 of theplasma processing chamber12, and thegas passage444 provides a by-pass line. Thegas passage456 is in fluid communication with thegas passage442 to theouter zone46. Thegas passage452 is in fluid communication with thegas passage448 to theinner zone42. Thegas passages450,454 and458 are in fluid communication with thegas passage444 to the by-pass line.
• Avalve440 is arranged along each of thegas passages442,444,448,450,452,454,456, and458. In an alternative embodiment, each of the pairs ofvalves440 located along thegas passages442,444;448,450;452,454; and456,458 can be replaced by a single, four-way valve. Thevalves440 can be selectively opened and closed, preferably under control of thecontroller500, to supply the first or second gas to the chamber, while simultaneously diverting the other gas to the by-pass line.
• For example, to supply the first gas to theinner zone42 and theouter zone46 of theplasma processing chamber12 and divert the second gas to the by-pass line, thevalves440 along thegas passages442,448 and454,458 are opened, while thevalves440 along thegas passages444,450 and452,456 are closed. To switch the gas flow so that the second gas is supplied to theinner zone42 and theouter zone46 of theplasma processing chamber12, while the first gas is diverted to the by-pass line, thevalves440 along thegas passages444,450 and452,456 are opened, while thevalves440 along thegas passages442,448 and454,458 are closed. In other words, a first group ofvalves440 is opened and a second group ofvalves440 is closed to supply the first gas to theplasma processing chamber12, and then the same first group of valves is closed and the same second group ofvalves440 is opened to change the gas flow to supply the second gas to the plasma processing chamber.
• In thegas switching system400, thevalves440 are fast-switching valves. As used herein, the term “fast-switching valve” means a valve that can be opened or closed within a short period of time, preferably less than about 100 ms, more preferably less than about 50 ms, after receiving a signal from thecontroller500 to open or close. Thevalves440 are preferably electronically controlled and actuated by receiving a signal from thecontroller500 to open or close. A suitable “fast-switching valve” that can be used in thegas switching system400 is valve model number FSR-SD-71-6.35, available from Fujikin of America, located in Santa Clara, Calif.
• Accordingly, thegas switching system400 can supply the first gas, e.g., to the interior of the vacuum chamber while diverting the second gas to the by-pass line, and then, preferably under control of thecontroller500, quickly switch these gas flows and supply the second gas to the vacuum chamber while diverting the first gas to the by-pass line. The amount of time that the first gas or second gas is supplied to the vacuum chamber before the gases are switched can be controlled by thecontroller500. The volume of thegas passages324,326,364, and366 between the associatedorifices430 and thevalves440 preferably is less than about 10 cm³. As explained above, the gas distribution system can be used with a plasma processing chamber including a plasma confinement zone to replace a gas volume of about ½ liter to about 4 liters within a period of less than about 1 s, more preferably less than about 200 ms, to thereby stabilize the system.
• Agas switching system1400 according to a second preferred embodiment is depicted inFIG. 6. In thegas switching system1400, avalve440 and anorifice430, which is located downstream of thevalve440 are arranged along each of the gas passages442-458. Otherwise, thegas switching system1400 can have the same configuration as thegas switching system400. Theorifices430 prevent undesirable pressure surges during switching of gases. In an alternative embodiment, each of the pairs ofvalves440 located along thegas passages442,444;448,450;452,454; and456,458 can be replaced by a single, four-way valve.
• Agas switching system2400 according to a third preferred embodiment is depicted inFIG. 7. In this embodiment, thegas switching system2400 is in fluid communication with afirst gas passage405 and a second gas passage415. The first andsecond gas passages405,415 can be, e.g., a first gas outlet and a second gas outlet, respectively, of a flow control section that, unlike theflow control section300 shown inFIG. 4, does not include both inner and outer zone gas outlets. Anorifice430 is located along each of thefirst gas passage405 and second gas passage415. Thefirst gas passage405 is divided intogas passages422,424, and the second gas passage445 is divided intogas passages426,428. Thegas passages422 and426 are in fluid communication with an interior of a vacuum chamber, and thegas passages424 and428 are in fluid communication with a by-pass line. Avalve440 is located along each of thegas passages422,424 and426,428. In an alternative embodiment, each of the pairs ofvalves440 located along thegas passages422,424; and426,428 can be replaced by a single, four-way valve.
• For example, to supply the first gas to the vacuum chamber and simultaneously route the second gas to the by-pass line, thevalves440 along thefluid passages422 and428 are opened and thevalves440 along thegas passages424 and426 are closed. To switch the gas flows so that the second gas is supplied to the vacuum chamber and the first gas is diverted to the by-pass line, thevalves440 along thefluid passages424 and426 are opened and thevalves440 along thefluid passages422 and428 are closed.
• In another preferred embodiment of the gas switching system, the embodiment shown inFIG. 7 can be modified by removing theorifices430 arranged in thefirst gas passage405 and second gas passage415 upstream of thevalves440, and instead arranging a orifice in each of thegas passages422,424,426 and428 downstream of the associatedvalves440.
• Preferred embodiments of thegas distribution system100 can be used to supply different gas chemistries and/or flow rates to theplasma processing chamber12 to perform various etching and/or deposition processes. For example, thegas distribution system100 can supply process gases to a plasma processing chamber to etch features in a silicon oxide, such as an SiO₂layer protected by an overlying mask, such as a UV resist mask. The SiO₂layer can be formed on a semiconductor wafer, such as a silicon wafer, having a diameter of 200 mm or 300 mm. The features can be, e.g., vias and/or trenches. During such etching processes, it is desirable to deposit a polymer on portions of the mask to repair striations, e.g., cracks or fissures, in the mask (i.e., to fill the striations) so that features etched in the SiO₂have their desired shape, e.g., vias have a round cross-section. If striations are not repaired, they can eventually reach the layer underlying the mask and in effect be transferred to that layer during etching. Also, a polymer can be deposited on the sidewalls of the features.
• It has been determined, however, that the thickness of the polymer deposited on the sidewalls and the base of etched features affects the etch rate. In anisotropic etching processes, polymer deposited on the bottom of the feature is substantially removed during etching. However, if the polymer becomes too thick on the sidewalls and/or on the base, the etch rate of SiO₂is decreased, and may be stopped completely. Polymer may also flake off of surfaces if it becomes too thick. Accordingly, the amount of time that the gas mixture for forming the polymer deposit on the mask and features is supplied into the plasma processing chamber is preferably controlled to thereby control the thickness of the polymer deposit formed on the SiO₂layer, while also providing sufficient repair and protection of the mask. During etching of the SiO₂layer, polymer is periodically removed from the mask. Accordingly, the polymer is preferably deposited on the mask between periods of etching of the SiO₂layer to ensure that sufficient repair and protection of the mask is achieved.
• Thegas distribution system100 can be used to supply process gas into a plasma processing chamber to etch SiO₂protected by an overlying mask, e.g., a UV resist mask, with control of the thickness of polymer deposited on the features, and with repair and protection of the mask. The gas switching system of thegas distribution system100 is operable to allow a first process gas used to etch the SiO₂to be supplied into the plasma processing chamber for a first period of time while a second gas mixture used to form the polymer deposit is diverted to a bypass line, and then to quickly switch the gas flows so that the second gas mixture is supplied into the plasma processing chamber to form the polymer deposit while the first gas mixture is supplied to the by-pass line. Preferably, the first gas mixture supplied to a plasma confinement zone of the plasma processing chamber is at least substantially replaced with the second gas mixture within a period of less than about 1 s, more preferably less than about 200 ms. The plasma confinement zone preferably has a volume of about ½ liter to about 4 liters.
• The first gas mixture used to etch SiO₂can contain, e.g., a fluorocarbon species, such as C₄F₈, O₂, and argon. The flow ratio of C₄F₈/O₂/argon can be, e.g., 20/10/500 sccm. Power is provided with at a combination of frequencies of 60 MHz, 27 MHz, and 2 MHz, at powers that can range from 50 to 5000 W. The second gas mixture used to form a polymer deposit can contain, e.g., a fluorohydrocarbon species, such as CH₃F, and argon. The flow ratio of CH₃F/argon can be, e.g., 15/500 sccm. The second gas mixture can optionally also include O₂. Power is provided at a combination of frequencies of 60 MHz, 27 MHz, and 2 MHz at powers that can range from 50 to 5000 W. For a capacitive-coupled plasma etch reactor for processing 200 mm or 300 mm wafers, the chamber pressure can be, e.g., 70-90 mTorr. The first gas mixture is preferably flowed into the plasma processing chamber for about 5 seconds to about 20 seconds each time it is introduced into the chamber (while the second gas is diverted to the by-pass line), and the second gas mixture is preferably flowed into the plasma processing chamber for about 1 second to about 3 seconds each time it is introduced into the chamber (while the first gas is diverted to the by-pass line). During etching of SiO₂on a substrate, the length of the etching period and/or the polymer deposition period can be increased or decreased within the preferred time periods. The polymer deposit preferably reaches a maximum thickness of less than about 100 angstroms during the etching process, which typically lasts up to about 3 minutes. During etching, polymer can be deposited on the mask to repair striations and provide mask protection. Accordingly, the shape of the openings in the mask preferably can be maintained during the etching process.
• The first, second, and thirdmechanical match boxes106,110,114 are used to provide gross impedance matching between the first, second, and third frequency tunedRF power sources104,108,112 and the load in theplasma processing chamber12. The first, second, and thirdmechanical boxes106,110,114 are not able to precisely match the quickly changing impedance load caused by the quickly changing recipe. Therefore, the invention uses frequency tuning provided by the first, second, and third frequency tunedRF power sources104,108,112 to quickly and precisely match the quickly varying impedance of the load and the first, second, and thirdmechanical match boxes106,110,114 with the impedance of the first, second, and third frequency tunedRF power sources104,108,112.
• Since the plasma conditions have to switch very rapidly between deposition and shaping (etch), there are several hardware features which have to work together. The gas volume must be small to reduce gas transition time in the processing chamber. This is achieved by making the plasma volume as small as possible using confinement rings. Also, the RF generators have to be able to rapidly tune in to the rapidly varying plasma conditions. This is achieved by using electronically frequency tuned generators rather than conventional mechanical match units. For best critical dimension control (CD) and uniformity control main gases are split and the ratio of center to edge gas flows are selectable. Finally, a tuning gas is needed which can be the same or different from the main gases and can be fed in a selectable flow to the edge or center of the wafer. So, combination of all the aforementioned hardware constitutes the overall performance desired for applied processes put forth in this document.
• While this invention has been described in terms of several preferred embodiments, there are alterations, permutations, and substitute equivalents, which fall within the scope of this invention. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and substitute equivalents as fall within the true spirit and scope of the present invention.

Claims (31)

1. A plasma wafer processing tool, comprising:

a plasma chamber with a plasma confinement zone with a volume and at least one electrode;

a gas distribution system for providing a first gas and a second gas, wherein the gas distribution system can substantially replace one of the first gas and the second gas in the plasma zone with the other of the first gas and the second gas within a period of less than 1 s, wherein a first plasma formed in the plasma zone from the first gas provides a first impedance load and wherein a second plasma formed in the plasma zone from the second gas provides a second impedance load different than the first impedance load;

a first frequency tuned RF power source for providing power to the at least one electrode in a first frequency range wherein the first frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power; and

a second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power.

2. The plasma wafer processing tool, as recited inclaim 1, wherein the first frequency tuned RF power source is able to provide a first frequency to impedance match the first impedance load and a second frequency to impedance match the second impedance load, wherein the first frequency is different than the second frequency.

3. The plasma wafer processing tool, as recited inclaim 2, wherein the second frequency tuned RF power source is able to provide a third frequency to impedance match the first impedance load and a fourth frequency to impedance match the second impedance load, wherein the fourth frequency is different than the first, second, and third frequency.

4. The plasma wafer processing tool, as recited inclaim 3, wherein the gas distribution system can substantially replace the first gas or the second gas in the plasma zone with the other of the first gas or the second gas within a period of less than 200 ms.

5. The plasma wafer processing tool, as recited inclaim 4, wherein the plasma chamber further comprises:

a substrate support for supporting a wafer within the plasma chamber; and

a chamber top spaced apart less than 3 cm. from the substrate support.

6. The plasma wafer processing tool, as recited inclaim 5, further comprising confinement rings spaced apart between the chamber top and substrate support.

7. The plasma wafer processing tool, as recited inclaim 6, wherein interiors of the confinement rings, the substrate support, and chamber top define the plasma zone.

8. The plasma wafer processing tool, as recited inclaim 7, wherein the first frequency turned RF power source and the second frequency tuned RF power source tune the output RF frequency over a range of less than 1 MHz.

9. The plasma wafer processing tool, as recited inclaim 1, wherein the gas distribution system comprises:

a first gas passage and a second gas passage adapted to be in fluid communication with a first gas line;

a third gas passage and a fourth gas passage adapted to be in fluid communication with a second gas line, the first and third gas passages being adapted to supply gas to the vacuum chamber, and the second and fourth gas passages being adapted to supply gas to a by-pass line;

a first fast switching valve arranged along the first gas passage;

a second fast switching valve arranged along the second gas passage;

a third fast switching valve arranged along the third gas passage;

a fourth fast switching valve arranged along the fourth gas passage;

the first and fourth fast switching valves being adapted to receive signals to open while the second and third fast switching valves are closed so that the first gas is supplied to the vacuum chamber via the first gas line and the first and third gas passages while the second gas is supplied to the by-pass line via the second gas line and the second and fourth gas passages; and

the second and third fast switching valves being adapted to receive signals to open while the first and fourth fast switching valves are closed so that the second gas is supplied to the vacuum chamber via the second gas line and the third gas passage while the first gas is supplied to the by-pass line via the first gas line and the second gas passage.

10. The plasma wafer processing tool, as recited inclaim 9, wherein the gas distribution system further comprises:

a first flow restrictor adapted to be arranged along the first gas line upstream of the first and second fast switching valves; and

a second flow restrictor adapted to be arranged along the second gas line upstream of the third and fourth fast switching valves;

wherein the first and second flow restrictors are adapted to maintain an approximately constant gas pressure in a region of the first and second gas lines upstream of and proximate the first and second flow restrictors.

11. The plasma wafer processing tool, as recited inclaim 10, wherein the first gas line has a volume between the first flow restrictor and the first and second fast switching valves of less than about 10 cm³, and the second gas line has a volume between the second flow restrictor and the third and fourth fast switching valves of less than about 10 cm³.

12. The plasma wafer processing tool, as recited inclaim 9, further wherein the gas distribution system further comprises:

a third flow restrictor adapted to be arranged along the first gas passage downstream of the first fast switching valve;

a fourth flow restrictor adapted to be arranged along the second gas passage downstream of the second fast switching valve;

a fifth flow restrictor adapted to be arranged along the third gas passage downstream of the third fast switching valve; and

a sixth flow restrictor adapted to be arranged along the fourth gas passage downstream of the fourth fast switching valve;

wherein the third, fourth, fifth and sixth flow restrictors are adapted to maintain an approximately constant gas pressure in a region of the first, second, third and fourth gas passages upstream of and proximate the respective first, second, third, fourth, fifth and sixth flow restrictors.

13. The plasma wafer processing tool, as recited inclaim 9, further comprising a controller which is operable to control the opening and closing of the first, second, third and fourth fast switching valves.

14. The plasma wafer processing tool, as recited inclaim 9, wherein the first, second, third and fourth fast switching valves can be opened and/or closed within a period of less than about 100 ms after receiving a signal.

15. The plasma wafer processing tool, as recited inclaim 1, further comprising a gas distribution member having an inner zone and outer zone, which are flow insulated from each other.

16. The plasma wafer processing tool, as recited inclaim 15, wherein the gas distribution system comprises:

a gas supply system, which provides the first gas and the second gas;

a flow control system in fluid communication with the gas supply system, which splits a flow of the first gas into an inner zone flow of the first gas and an outer zone flow of the first gas and which splits a flow of the second gas into an inner zone flow of the second gas and an outer zone flow of the second gas; and

a switching section, which is in fluid connection between the flow control system and the inner zone and outer zone of the gas distribution member, and wherein the switching section switches flow to the inner zone of the gas distribution member between the inner zone flow of the first gas and the inner zone of the second gas and wherein the switching section switches flow to the outer zone of the gas distribution member between the outer zone flow of the first gas and the outer zone flow of the second gas.

17. The plasma wafer processing tool, as recited inclaim 16, further comprising a by-pass line, wherein the switching section also switches the inner zone flow of the first gas, the inner zone of the second gas, the outer zone flow of the first gas, and the outer zone flow of the second gas to the by-pass line.

18. The plasma wafer processing tool, as recited inclaim 17, wherein the flow control system further comprising a tuning gas source in fluid connection to at least one of the first gas inner zone flow or first gas outer zone flow after the flow of the first gas is split into the inner zone flow of the first gas and the outer zone flow of the first gas.

19. A plasma processing apparatus, comprising:

a plasma processing chamber including a showerhead electrode assembly having the inner and outer zones and an interior volume of about ½ liter to 4 liters;

the gas distribution system in fluid communication with the inner and outer zones of the showerhead electrode assembly, wherein the gas distribution system being operable to substantially replace a first process gas or a second process gas in the plasma confinement zone with the other of the first process gas or the second process gas within a period of less than about 1 s, comprising:

a gas supply system, which provides the first process gas and the second process gas;

a flow control system in fluid communication with the gas supply system, which splits a flow of the first process gas into an inner zone flow of the first process gas and an outer zone flow of the first process gas and which splits a flow of the second process gas into an inner zone flow of the second process gas and an outer zone flow of the second process gas; and

a switching section, which is in fluid connection between the flow control system and the inner zone and outer zone of the gas distribution member, and wherein the switching section switches flow to the inner zone of the gas distribution member between the inner zone flow of the first process gas and the inner zone of the second process gas and wherein the switching section switches flow to the outer zone of the gas distribution member between the outer zone flow of the first process gas and the outer zone flow of the second process gas;

a first frequency tuned RF power source for providing power to the plasma processing apparatus in a first frequency range wherein the first frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power; and

a second frequency tuned RF power source for providing power to the plasma processing apparatus in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power.

20. The plasma processing apparatus, as recited inclaim 19, further comprising a by-pass line, wherein the switching section also switches the inner zone flow of the first process gas, the inner zone of the second process gas, the outer zone flow of the first process gas, and the outer zone flow of the second process gas to the by-pass line.

21. The plasma processing apparatus, as recited inclaim 20, wherein the flow control system further comprising a tuning gas source in fluid connection to at least one of the first process gas inner zone flow or first process gas outer zone flow after the flow of the first process gas is split into the inner zone flow of the first process gas and the outer zone flow of the first process gas.

22. The plasma processing apparatus, as recited inclaim 21, wherein the first frequency tuned RF power source is able to provide a first frequency to impedance match a first impedance load of a plasma formed from the first process gas and a second frequency to impedance match a second impedance load of a plasma formed from the second plasma gas, wherein the first frequency is different than the second frequency and wherein the second frequency tuned RF power source is able to provide a third frequency to impedance match the first impedance load and a fourth frequency to impedance match the second impedance load, wherein the fourth frequency is different than the first, second, and third frequency.

23. A method of processing a semiconductor structure in a plasma processing chamber, comprising:

a) supplying a first process gas into the plasma processing chamber while diverting a second process gas to a bypass-line, the plasma processing chamber containing a semiconductor substrate including at least one layer and a patterned resist mask overlying the layer;

b) energizing the first process gas to produce a first plasma with a first impedance load and (i) etching at least one feature in the layer or (ii) forming a polymer deposit on the mask;

c) frequency tuning a first RF power source to a first frequency to match the first impedance load;

d) frequency tuning a second RF power source to a second frequency different than the first frequency to match the first impedance load;

e) switching the flows of the first and second process gases so that the second process gas is supplied into the plasma processing chamber while diverting the first process gas to the by-pass line, the first process gas being substantially replaced in a plasma confinement zone of the plasma processing chamber by the second process gas within a period of less than about 1 s;

f) energizing the second process gas to produce a second plasma with a second impedance load different from the first impedance load and (iii) etching the at least one feature in the layer or (iv) forming a polymer deposit on the layer and the mask;

g) frequency tuning the first RF power source to a third frequency different than the first and second frequencies to match the second impedance load;

h) frequency tuning the second RF power source to a fourth frequency different than the first, second, and third frequencies to match the second impedance load;

i) switching the flows of the first and second process gases so that the first process gas is supplied into the plasma processing chamber while diverting the second process gas to the by-pass line, the second process gas being substantially replaced in the plasma confinement zone of the plasma processing chamber by the first process gas within a period of less than about 1 s; and

j) repeating b)-i) a plurality of times with the substrate.

24. The method, as recited inclaim 23, wherein the periods of less than about 1 s is less than 200 ms.

25. The method, as recited inclaim 23, wherein the polymer deposit is formed to a maximum thickness of less than about 100 angstroms after repeating a)-i) a plurality of times with the substrate.

26. The method, as recited inclaim 23, further comprising:

splitting a flow of the first process gas into an inner zone flow and an outer zone flow, wherein the supplying the first process gas into the plasma processing chamber provides the inner zone flow to an inner zone of the processing chamber and the outer zone flow to an outer zone of the processing chamber.

27. The method, as recited inclaim 26, further comprising providing a tuning gas to at least one of the inner zone flow of the first process gas and the outer zone flow of the first process gas, wherein the tuning gas is provided after the splitting of the flow of the first process gas.

28. The method ofclaim 27, wherein the first plasma etches the at least one feature in the layer, and the second plasma forms the deposit on the layer and the mask, the deposit repairing striations in the mask.

29. The method ofclaim 23, wherein the plasma confinement zone has a volume of about ½ liter to about 4 liters.

30. The method, as recited inclaim 23, wherein:

the first layer is of SiO₂;

the mask is a UV-resist mask;

the first process gas comprises a mixture of C₄F₈, O₂and argon and the first plasma etches the layer; and

the second process gas comprises a mixture of CH₃F, argon, and optionally O₂and the second plasma forms the polymer deposit on the feature and the mask.

31. The method, as recited inclaim 23, wherein the frequency tuning the first RF power source to a first frequency to match the first impedance load, and the frequency tuning the first RF power source to a third frequency to match the second impedance load use a matchbox to partially match the first impedance load and third impedance load and use frequency tuning to provide a final match of the first impedance load and second impedance load.

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