US20060226442A1 - GaN-based high electron mobility transistor and method for making the same - Google Patents

Abstract

A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.

Description

FIELD OF INVENTION
• The present invention relates generally to transistors, and more particularly, to GaN based High Electron Mobility Transistors (HEMTs) and methods for making such transistors.
BACKGROUND
• High Electron Mobility Transistors are known to be desirable in certain applications. One such application is microwave amplifiers. They are known to generally yield higher output power densities, lower noise figures, and be able to operate at higher frequencies as compared to other Field Effect Transistors (FETs). GaN material system based HEMT's are believed to be desirable for use in Radio Frequency (RF) modulation schemes and interfaces.
• However, drain current reduction at high frequencies has conventionally limited the available output power in GaN material system-based HEMT devices, which is believed to be caused by the surface states. It is believed desirable to passivate the surface states and prevent surface damage during device processing. Low breakdown voltage has conventionally limited high drain biases for GaN material system based HEMT devices. It is believed desirable to increase the breakdown voltage. Further, the power performance of conventional GaN material system based HEMT devices typically degrades at high junction temperatures, due to reduced carrier saturation velocity and increased parasitic resistance. It is believed to be desirable to maintain a high two dimensional electron gas (2DEG) mobility even at high temperatures. Repeatable low contact resistance in conventional GaN material system based HEMT devices has also proven problematic for high frequency operation. It is believed desirable to provide for repeatable and low contact resistances. It is also believed to be desirable to increase the 2DEG sheet charge and maintain 2DEG confinement to increase usable RF power and eliminate drain current reduction at high frequencies.
SUMMARY OF THE INVENTION
• A high electron mobility transistor including: a GaN material system based heterostructure; barrier surface protection during MESA processing; a front end passivating dielectric layer over the heterostructure and defining a plurality of low damage etch processed openings for electrical ohmic contacts for source and drain electrodes and for Schottky contacts for gate electrodes on the heterostructure through the openings; ohmic contact opening surface treatments and source/drain ion implantation to reduce contact and source/drain resistance; and a double heterostructure for improved carrier confinement.
• According to an aspect of the present invention, a method for making a high electron mobility transistor includes low pressure chemical vapor depositing a passivating nitride layer over a GaN material system based heterostructure; etching openings in the nitride layer; and forming electrodes through the openings.
BRIEF DESCRIPTION OF THE DRAWINGS
• Understanding of the present invention will be facilitated by considering the following detailed description of the preferred embodiments of the present invention taken in conjunction with the accompanying drawings, in which like numerals refer to like parts, and:
• FIG. 1 illustrates a diagrammatic view of a HEMT;
• FIG. 2 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention;
• FIG. 3 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention;
• FIG. 4 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention;
• FIG. 5 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention;
• FIG. 6 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention;
• FIG. 7 illustrates performance characteristics according to an aspect of the present invention;
• FIG. 8 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention;
• FIGS. 9A-9D illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention;
• FIGS. 10A-10C illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention;
• FIGS. 11A-11E illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention; and
• FIGS. 12A-12D illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
• It is to be understood that the figures and descriptions of the present invention have been simplified to illustrate elements that are relevant for a clear understanding of the present invention, while eliminating, for the purpose of clarity, many other elements found in typical transistor systems and processing methods. Those of ordinary skill in the art may recognize that other elements and/or steps are desirable and/or required in implementing the present invention. However, because such elements and steps are well known in the art, and because they do not facilitate a better understanding of the present invention, a discussion of such elements and steps is not provided herein.
• Referring now toFIG. 1, there is shown a diagrammatic view of a High Electron Mobility Transistor (HEMT)device10.Device10 generally includes asubstrate20, anoptional nucleation layer30,buffer layer40,barrier layer50,2DEG region60, andpassivation layer70.Device10 also includes a T-gate80,source90 anddrain100. T-gate80 may be laterally off-set towardssource90. For example, the lateral separation between T-gate80 andsource90 may be on the order of about 0.5-2 μm (micrometer), preferably about 1 μm, while the lateral separation between T-gate80 anddrain100 may be on the order of about 1-5 μm, and preferably about 2 μm.
• Substrate20 may take the form of a semi-insulating monocrystalline silicon carbide (SiC) substrate.SiC substrate20 may be of a 4H or 6H polytype, for example.Substrate20 may also take the form of a semi-insulating monocrystalline bulk GaN substrate, or may take the form of a sapphire substrate, or a semi-insulating monocrystalline AlN substrate, all by way of non-limiting example.
• Nucleation layer30 may take the form of an AlN, or a GaN, or an AlGaN layer; preferably a low-temperature AlN, nucleation layer where a 4H or 6H-SiC orsapphire substrate20 is used.Nucleation layer30 may optionally be omitted wheresubstrate20 takes the form of a bulk GaN or AlN substrate, for example.
• Buffer layer40 may take the form of a resistive GaN layer.Barrier layer50 may take the form of an AlGaN layer. AlGaNbarrier layer50 may be Si doped or undoped, and preferably is undoped.Channel60 represents a 2-dimensional electron gas (2DEG) channel formed by the heterojunction betweenbuffer layer40 andbarrier layer50. The heterostructure may take the form of an AlGaN/GaN, or AlN/GaN heterostructure. A 2-Dimensional Electron Gas (2DEG) forms at the interface betweenbuffer layer40 andbarrier layer50, i.e.,channel60, as a result of well known strong spontaneous polarization and piezoelectric polarization effects in GaN-based material systems. The resulting high density, high mobility AlGaN/GaN 2DEG may be used to provide HEMT functionality when modulated bygate electrode80.
• Passivation layer70 may take a conventional form where low temperature (400 deg. C.) plasma enhanced chemical vapor deposition (PECVD) passivation material is deposited after high temperature ohmic contact annealing and overlay and gate metallization processing have been completed. For example,passivation layer70 may take the form of a surface film including SiN_x, AlN, Sc₂O₃, MgO or SiO₂.
• Ohmic contacts/overlay metallization processing may be used to form source anddrain electrodes90,100. Schottky metallization may be used to formT-gate electrode80.
• Referring now also toFIG. 2, there is shown a diagrammatic view of a “front end” field plate-type surface passivated High Electron Mobility Transistor (HEMT)device200 according to an aspect of the present invention. Like numerals refer to like elements of the invention. Field plate-type passivation layer210 provides for better surface coverage inregions110 than doesconventional passivation layer70 because it is deposited early in the processing. This allows for stabilization of surface states inregion110. Theextended passivation layer210 underT-gate80 may also provide for increased breakdown voltage as compared topassivation layer70, by spreading the crowded electric field and modulating the surface states on thedrain100 side aroundT-gate80.
• According to an aspect of the present invention, a passivation layer, such aspassivation layer210, may be deposited relatively early during device processing. Passivation may occur prior to ohmic source or drain terminal contact, and gate formation. According to an aspect of the present invention, a passivation layer, such aspassivation layer210, may be deposited upon a GaN material system heterostructure using low pressure chemical vapor deposition (LPCVD) following mesa formation. For example, a heterostructure including layers20-50 may be obtained via conventional commercial sources. Applying the passivation prior to ohmic contact and T-gate metallization processing allows the formation of a higher temperature/denser passivation layer, and allows passivation under the T-Gate extensions which is not the case for post gate passivation as shown inFIG. 1region110. The heterostructure, or wafer, may be cleaned, such as by using acetone, methanol and isopropanol dips. The wafer may then be rinsed and spin dried. Further cleaning, including a buffered oxide etch (BOE) and/or HF bath may also be used. The cleaned wafer may again be rinsed and dried. The cleaned wafer may then be subjected to a LPCVD process using NH₃and SiH₂Cl₂gases flowed at about 70 and 30 standard cubic centimeters per second (sccm) at about 765 degrees Celsius (deg. C.) and 370-460 millitorr (mT) to deposit SiNx. Processing time may be appropriate for depositing a dense nitride passivation layer having a thickness of between about 450 and 2000 angstroms, for example.Passivation layer210 may be suitable for use with a wide-variety of GaN material system based HEMTs.
• Referring now also toFIG. 3, there is shown a dopedchannel HEMT300 according to an aspect of the present invention. Again, like numerals refer to like elements of the invention.HEMT300 includes a dopedchannel310.Channel310 may include doped GaN or InGaN, by way of non-limiting example.Channel310 may be between about 50 angstroms and 200 angstroms thick, and preferably about 100 angstroms, wherebarrier layer50 is around 100 angstroms to 500 angstroms thick, and preferably about 200-300 angstroms thick.HEMT300 may exhibit improved performance at high temperatures.Channel310 may be n-type Si doped on the order of about 1016 to 1018 cm⁻³.Channel310 may be substantially uniformly doped.Layer310 may be grown uponbuffer layer40.HEMT300 performance may be relatively temperature independent, as compared withHEMT10 or200. This may result from the scattering mechanism being dominated in the dopedchannel310 by impurity scattering, which is relatively temperature independent.
• Referring now also toFIG. 4, there is shown a diagrammatic view of anHEMT400 with implanted source anddrain regions410S,410D, respectively, according to an aspect of the present invention. Again, like references refer to like elements of the invention. Source/drain implantation may serve to greatly increase conductivity under the source and drain metal electrodes, thus facilitating low contact resistances. Implantedregions410S,410D may be combined with a doped channel, such aschannel310 ofFIG. 3. Implantedregions410S,410D may also be particularly well suited for use with a relatively thin, undoped AlN sub-barrier layer—which may otherwise hinder providing good, low resistance ohmic contacts. Aspects of forming implanted source and drain regions are detailed with respect toFIGS. 11A-11E.
• Referring now also toFIG. 5, there is shown a diagrammatic view of anHEMT500 incorporating anAlN sub-barrier layer510 according to an aspect of the present invention. Again, like references refer to like elements.Layer510 may be relatively thin, on the order of about 10-20 angstroms, and be composed of undoped AlN.Layer510 may serve to enhance the charge in the2DEG channel60 and reduce the noise figure inHEMT500. Again,layer510 may be incorporated with a doped channel, such aschannel310 ofFIG. 3, and/or implanted source and drain regions, such asregions410S and410D ofFIG. 4.
• Referring now also toFIG. 6, there is shown a diagrammatic view of adouble heterostructure HEMT600 according to an aspect of the present invention. Again, like references designate like elements of the invention.HEMT600 includes achannel layer610.Channel610 may take the form of un-doped GaN or InGaN, by way of non-limiting example only. In such an embodiment,HEMT600 takes the form of an AlGaN/(ln)GaN/AlGaN double heterostructure HEMT to provide a better carrier confinement in thechannel610.Channel610 may be around 50 angstroms to 200 angstroms thick, preferably about 100 angstroms, wherelayer50 is around 100 angstroms to 500 angstroms thick and preferably about 200-300 angstroms thick.Layer620 may be undoped, or doped with Fe or other elements to provide semi-insulating properties.Layer620 may be about 50 angstroms to 5000 angstroms thick, preferably about 100-500 angstroms.
• Referring now also toFIG. 7, there are shown some characteristics of a double heterostructure HEMT, such asHEMT600 ofFIG. 6, and a single heterostructure HEMT. As is shown therein, a double heterostructure HEMT may exhibit a higher channel mobility compared to other HEMT structures. Also, a double heterostructure HEMT may exhibit a lower 2DEG sheet density as compared to other HEMT structures.
• According to an aspect of the present invention, an HEMT device, such as any ofdevices10,200,300,400,500 and600 may be formed into devices including sloped mesas. The shaping of HEMT devices to include a sloped mesa may better isolate such devices, improve device manufacturing yields, and improve long-term device reliability, for example. Referring now toFIG. 8, there is shown adevice800 according to an aspect of the present invention. As will be understood by those possessing an ordinary skill in the pertinent arts, the structure ofillustrated device800 largely corresponds to a mesa structure ofdevice400 for non-limiting purposes of illustration only.Device800 includes a sloped mesa. Again, like references identify like elements of the invention.Gate80, drain90 andsource100 are positioned on themesa plateau portion810 oflayer50. The mesa etch may terminate in theGaN Buffer layer40, and have a MESA etch depth of about 2000 angstroms compared to abarrier layer50 thickness of about 200 angstroms.
• According to an aspect of the present invention, GaN material system heterostructures may be formed into mesa-formed HEMT devices with the assistance of one or more protecting layers to minimize the potential of surface damage to the sensitive barrier layer. A GaN material system heterostructure suitable for use may take the form of a wafer having a layer structure consistent with any one of structures200-600, absent passivation layers, gates, sources and drains, for example.
• Referring now also toFIGS. 9A-9D, there are shownstructures900A-900D at various processing steps according to an aspect of the present invention. Prior to processing, a GaN material system heterostructure wafer, hereinafter referred to simply as a wafer, may be cleaned using acetone, methanol and isopropyl alcohol dips, and subsequent rinsing and spin drying, for example. According to an aspect of the present invention, a dielectric film may be used to mitigate photo resist removal damage that may otherwise occur during mesa formation. Referring first toFIG. 9A, there is shown astructure900A.Illustrated structure900A includes an AlGaN/GaN heterostructure910. Such a structure is analogous to that shown inFIGS. 1-6, absent T-gate80,source90,drain100 andpassivation layer70,210.Dielectric film920 may be low temperature chemical vapor deposited oxide (PECVD or Low temperature CVD deposited) overstructure910.Film920 may take the form of a thin layer (about 1000 angstroms or less) of silicon dioxide (Si0₂), for example.
• Oxide film920 may be formed by flowing SiH₄and O₂at rates of about 43 sccm and 90 sccm, respectively, at a pressure of about 260 mT and a temperature of about 440deg. C. Film920 may serve as a protection layer for the AlGaN barrier surface during mesa etching and subsequent etch mask removal. Temperatures may rise significantly during mesa etching resulting in hardening of the resist masking layer930 (FIG. 9B). This may render the photo resist on the structure difficult to remove.Layer920 protects the barrier layer surface during resist removal, and thus facilitates plasma ashing to remove photoresist fromstructure910. Direct exposure of the AlGaN barrier to plasma ashing has been shown to damage the barrier layer and reduce or remove the 2DEG in the channel.
• Referring now also toFIG. 9B, there is shown astructure900B.Structure900B additionally includes a patternedphotoresist layer930.Layer930 may be composed of a commercially available photoresist, such as AZ4400 available from Shipley, for example.Layer930 may be patterned in the form of a mesa mask using conventional methodologies, such as spin coating, exposing, developing and reflowing, for example.
• Referring now also toFIG. 9C, the patternedmask layer930 may be suitable for facilitating shaping oflayer920 andstructure910 into amesa structure900C. For example, a reactive ion etch (RIE) may be used to remove portions oflayer920 dependently uponmask layer930. A GaN layer withinstructure910 may serve as an etch stop for a NF₃/Ar etch flowed at about 12/28 sccm, respectively, at about 100 mT and 400 watts (W) using a carbon plate. Referring still to structure900C, a diluted oxide etch, such as an etch using a diluted HF etchant, may then be used to clean the GaN surface exposed by the reactive ion etch. Referring still to structure900C, a high density, Inductively Coupled Plasma (ICP) etch may be used to form the GaN layer into the desired mesa shape. BCl₃and Cl₂gases may be flowed at rates of 10 sccm and 30 sccm during ignition and 15 sccm and 30 sccm during etching, respectively. RF power used may be around 50 W and 300 W during ignition and 15 W (using a 90 v bias) and 300 W during etching. The etching may be carried out at around 5 mT and about 10 deg. C. Etch depth can range from 1000-3000 Angstroms, for example.
• Referring now also toFIG. 9D, patternedlayer930 and the remaining portions oflayer920 may then be selectively removed to provide mesa shapedstructure900D. For example, an O₂ashing or descum process may be carried out to remove densified resist. Processing may include an acetone bath and propanol rinse. Another ashing or descum process may then be effected, to better ensure all resist has been removed.Dielectric layer920 remains over the barrier layer for protection during this removal step. A wet oxide etch may then be used to remove the remaininglayer920. A dilute HF etchant (such as on the order of about 1:20) may be used at room temperature. The mesa shaped wafer may then again be cleaned, such as by using a photo resist stripping bath, for example. The use oflayer920 may serve to protect the relatively fragile channel area ofstructure910 during the aforementioned processing over which the gate, and source and drain electrodes will be formed.
• Structure900D may be provided with a T-gate80,source90,drain100 andpassivation layer210 to provide a device analogous todevice800 ofFIG. 8, for example—absent doped regions.
• Referring now also toFIGS. 10A-10C, according to an aspect of the present invention, ohmic contact openings for the source and drain regions may be plasma treated prior to ohmic contact metallization. An HEMT structure to be plasma treated in accordance with the present invention may take the form of one of structures100-600 ofFIGS. 1-6, or800 ofFIG. 8. Plasma treating AlGaN/GaN heterostructure ohmic contact openings immediately prior to ohmic contact metallization may lower the ohmic contact resistance by creating a near-surface conducting layer with N-vacancies. It may also serve to clean the structure prior to contact metallization. It may also improve the ohmic metal surface morphology after Rapid Thermal Annealing (RTA) by creating microscopic surface features.Illustrated structure1000A includes an AlGaN/GaN heterostructure1010, such as a structure analogous to structure900D shown inFIG. 9D (only the mesa plateau is shown).Illustrated structure1000A also includes asurface passivating layer1020.Layer1020 may take the form of a SiNx layer that has been formed overheterostructure1010 using high temperature, densified LPCVD, as in one of structures100-600 ofFIGS. 1-6, or800 ofFIG. 8.Layer1020 may also be formed using plasma enhanced chemical vapor deposition (PECVD), or evaporation, for example.Layer1020 may take the form of an AlN film formed onstructure1010 using molecular beam expitaxy (MBE) or sputtering, Sc₂O₃, MgO using MBE, or SiO₂using LPCVD or PECVD.Layer1020 may take the form of a combination of these layers as well, for example.
• Referring now also toFIG. 10B,structure1000B includes a patternedphotoresist layer1030 over protection orpassivation layer1020.Layer1030 may haveopenings1040,1050 corresponding to ohmic contact regions tolayer1010, such as those corresponding to source90 and/or drain100 (FIG. 8), for example.Structure1000B may be subjected to a selective etch well suited for removing portions oflayer1020 exposed byopenings1040,1050 inlayer1030. For example,structure1000B may be subjected to a wet etch such as dilute HF or buffered oxide etch (BOE). A plasma etch may also be used for etching.Layer1020, which may be akin to layer210 and take the form of a dense SiN_x, may be etched using an inductivety coupled plasma (ICP) etch, for example. SF₆gas may be flowed at rates of 30 sccm during ignition and etching. RF powers used may be around 50 W and 600 W during ignition and 5 W and 600 W during etching. The etching may be carried out at around 20 mT and at about 10 deg. C. The resultingstructure1000C ofFIG. 10C may then be subjected to an ICP etch prior to ohmic contact metallization deposition. This ICP etch may be selected to remove less than around 50 angstroms of the barrier layer of theheterostructure1010, to better ensure an ohmic contact formation during metallization deposition and anneal. BCl₃and Cl₂gases may be flowed at rates of 15 and 30 sccm, and RF power used may be around 40 W. The etch may be carried out for about 20-60 seconds at around 5 mTorr. at about 10 deg. C. N₂gas may also be used at flow rates of 15 sccm. RF powers used may be around 40 W for RF source and 300 W for ICP source. The etch may be carried out for about 30-60 seconds at around 3 mTorr. at about 10 deg.
• Referring now also toFIG. 10C,regions1060,1070 may have N-vacancies created inheterostructure1010 by the ICP etch treatment.Regions1060,1070 ofstructure1010 correspond toopenings1040,1050.Regions1060,1070 may correspond to ohmic contact regions for source and drain electrodes providing for improved device performance due to reduced ohmic contact resistances for source and drain electrodes. Photo resist1030 may be removed analogously to the photo resist removal discussed with regard toFIGS. 9A-9D. Remaining portions oflayer1020 may be utilized as surface passivation, analogous to layer210 ofFIG. 4, or the layer may be removed and replaced. Alternatively, one or more oflayers1020,1030 may be used as a lift off material for one or more metallization layers deposited to form ohmic contacts for the source and drain electrodes (e.g. layer1195 ofFIG. 11D). For example, standard Ti—Al—Ti—Au, Ti—Al—Mo—Au, Ti—Al—Ni—Au, or Ti—Al—Pt—Au metallization stacks may be used. After ICP pre-cleaning, an optional pre-ohmic contact metal deposition cleaning of the exposed portions ofregions1060 and1070 may be used to insure any native oxide is removed. For example, O₂ashing and a wet diluted and buffered oxide etch may be used. As will be understood by those possessing an ordinary skill in the pertinent arts, an RTA anneal at between 750 deg. C. and 850 deg. C. may be performed following ohmic contact metal liftoff processing to complete the formation of the ohmic contacts.
• Referring now also toFIG. 11A,structure1100A is akin to structure1000B ofFIG. 10B. A further embodiment to reduce source drain resistance is to ion implant the source and drain regions prior to ohmic contact formation. Such a method may implant Si⁺ or Ge⁺ or co-implant Si⁺ and N⁺ or Ge⁺ and N⁺ into portions of theheterostructure1110 exposed throughopenings1140 and1150 inFIG. 11B formed in an analogous fashion toopenings1040 and1050 inFIG. 10C.Layer1130 may be a thick photoresist or a metal mask to block the implant.Layer1120 may take the form of AlN to facilitate protection of the AlGaN/GaN heterostructure from damage during implant annealing. Implantedregions1160 and1170 inFIG. 11C may be thermally activated between about 1000 deg. C. and 1300 deg. C. with an AlN mask. The photoresist or metal mask may be removed from the wafer prior to annealing. According to an aspect of the present invention, RTA may be used to activate the dopant. Referring now also toFIG. 11C, the AlN anneal protection layer may be retained as the pasivation layer, or it may be removed and replaced by LPCVD silicon nitride.
• Referring now also toFIGS. 11D and 11E, ohmic contacts to layer1110 throughopenings1140,1150 inpassivation layer1120 corresponding to source and drain implanted regions may be provided. A photo resistlayer1130 may be reapplied overpassivation layer1120, analogously to the photo resist layers discussed hereinabove. Photo resistlayer1130 may be patterned to reopen openings inpassivation layer1020 corresponding to previously implanted source and drain regions.Passivation layer1020 openings are then ready for removal of the AlN to the AlGaN/GaN Heterostructure surface. The exposed portions of the1110 surface (ohmic contact openings) may be cleaned followed by ohmic contact metal deposition, liftoff processing and annealing as discussed previously. Standard liftoff lithography and metallization steps may be then used to provide source anddrain electrodes1192 and1194 shown inFIG. 11E. For example, a Ti—Ni—Au source/drain metallization may be used.
• The resultingdevice1100E may include aheterostructure1110 including dopedregions1160,1170, andpassivation layer1120, and be largely analogous to the form ofdevice400 ofFIG. 4 or800 ofFIG. 8, absent ohmic contacts and source, drain and gate metallization, by way of non-limiting example only.
• Referring now also toFIGS. 12A-12D, there are shownstructures1200A-1200D that represent various processing steps according to an aspect of the present invention.Structure1200D may take the form of a HEMT according to an aspect of the present invention, including drain andsource electrodes1192,1194 (that may be akin to drain andsource90,100 ofFIG. 2), and a gate electrode1298 (that may be akin togate80 ofFIG. 2).Structure1200A ofFIG. 12A may be analogous to structure1100A ofFIG. 11A, but in this case the opening in the photo resist is in the gate metallization region. Photo resistlayer1230 may take the form of a PMMA, for example.Layer1230 may take the form of a 495 PMMA, for example.Layer1230 may be spin coated ontostructure1100E, for example.Layer1230 may be well suited for use as a processing mask for gate dielectric opening andgate electrode1298 liftoff formation, for example.
• Referring now toFIG. 12A, anopening1295 may be formed inlayer1230 by e-beam exposure and developing as is shown instructure1200A. The position and dimensions ofopening1295 may largely correspond to the position and footprint dimensions ofgate1298 throughpassivation layer1120. Developer utilized may include MIBK:IPA. A developer may also be used to remove remaining portions ofPMMA layer1230. Referring now also toFIG. 12B, as shown instructure1200B, etching may be used to remove portions oflayer1120 corresponding toopening1295. A reactive ion etch (RIE) may be used for example. A PT-72 RIE machine may be operated at about 0.04 mT, with a flow of 70 sccm CF₄at about 150 W. Thebarrier surface1296 exposed inFIG. 12B is sensitive to RIE exposure and such exposure can reduce the 2DEG in the channel. The RIE conditions may be selected to minimize 2DEG reduction. In addition, a rapid thermal anneal (RTA) process may be used to remove the ion damage from RIE plasma etch.
• Referring now also toFIG. 12C, a PMMA has been reapplied to the wafer instructure1200C such that the post develop opening1297 overlaps thegate footprint opening1296. Gate metal deposition and subsequent liftoff processing may be used, resulting in theHEMT structure1200D shown inFIG. 12D. The preferred gate metallization is Ni/Pt/Au, with a total thickness of between about 0.4 and 0.8 μm.
• While the foregoing invention has been described with reference to the above, various modifications and changes can be made without departing from the spirit of the invention. Accordingly, all such modifications and changes are considered to be within the scope of the appended claims.

Claims (22)

1-6. (canceled)

7. A high electron mobility transistor comprising:

a GaN material system based heterostructure;

a passivating nitride layer over said heterostructure and defining a plurality of openings;

a plurality of electrical contacts for said heterostructure and being formed through said openings; and

a gate contact being formed through one of said openings and in contact with the GaN material system based heterostructure, wherein a portion of said passivating nitride layer is under a portion of the gate contact.

8. The transistor ofclaim 7, wherein said electrical contacts comprise source and drain contacts comprising one of: Ti—Al—Ti—Au, Ti—Al—Mo—Au, Ti—Al—Ni—Au, or Ti—Al—Pt—Au, and a gate contact comprising one of: Ni/Pt/Au, Ni/Au, Pt/Au, or Ir/Au.

9. The transistor ofclaim 7, wherein said passivating nitride layer has a thickness between about 450 and 2000 angstroms.

10-15. (canceled)

16. A high electron mobility transistor comprising:

a mesa structure having a plateau and formed by a method comprising:

providing a dielectric film over a GaN material system based heterostructure;

providing a photo resist mask over said dielectric film;

etching said dielectric film and heterostructure dependently upon said photo resist mask into a mesa structure; and

removing said photo resist mask and remaining portions of said dielectric film;

a passivating nitride layer over said plateau and defining at least one opening; and

a gate contact extending through said opening and in contact with the GaN material system based heterostructure, wherein a portion of said passivating nitride layer is under at least one portion of said gate contact.

17. The transistor ofclaim 16, wherein said etching comprises reactive ion etching said dielectric film and inductive coupled plasma etching said heterostructure.

18. (canceled)

19. The transistor ofclaim 16, wherein said GaN material system based heterostructure comprises an AlGaN/GaN double heterostructure.

20-21. (canceled)

22. A high electron mobility transistor comprising:

a GaN material system based heterostructure;

doped source and drain contact regions for the GaN material system based heterostructure, wherein said doped source and drain contact regions are doped with at least one of Si+, Ge+, Si+ and N+, or Ge+ and N+;

a passivating layer over said GaN material system based heterostructure; and

a gate contact region in contact with the GaN material system based heterostructure, wherein a portion of said passivating nitride layer is under at least one portion of said gate contact.

23. The transistor ofclaim 22, further comprising thermally activating said dopant in said heterostructure.

24. The transistor ofclaim 22, further comprising forming contact electrodes over said dopant in said heterostructure.

25. The transistor ofclaim 22, wherein said GaN material system based heterostructure comprises at least one AlGaN/GaN heterostructure.

26. The transistor ofclaim 22, wherein said GaN material system based heterostructure comprises a dense nitride passivation layer.

27. The transistor ofclaim 22, wherein said GaN material system based heterostructure comprises a doped channel.

28. The transistor ofclaim 22, wherein said GaN material system based heterostructure comprises at least one AlGaN/GaN heterostructure further comprising an AlN layer.

29. The transistor ofclaim 22, wherein said GaN material system based heterostructure comprises a double AlGaN/GaN heterostructure.

30. The transistor ofclaim 22, wherein said GaN material system based heterostructure comprises a mesa region having gate, drain and source electrodes formed thereon.

31. The transistor ofclaim 22, further comprising a mesa structure having a plateau, wherein said passivating layer is over said plateau.

32. A high electron mobility transistor comprising:

a GaN material system based heterostructure;

doped source and drain contact regions for the GaN material system based heterostructure, wherein said doped source and drain contact regions are doped with at least one of Si+, Ge+, Si+ and N+, or Ge+ and N+;

a passivating layer over said GaN material system based heterostructure;

a channel laterally extending between the source and drain contact regions; and,

a gate electrode having a portion extending through the passivating layer, the gate electrode having an overall width less than the width of the laterally extending channel.

33. The transistor ofclaim 32, further comprising a mesa structure having a plateau, wherein said passivating layer is over said plateau.

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