US20060141680A1 - Processing a memory link with a set of at least two laser pulses - Google Patents

Abstract

A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

Description

RELATED APPLICATIONS
• This patent application is a continuation of U.S. patent application Ser. No. 10/322,347, filed Dec. 17, 2002, which claims priority from U.S. Provisional Application No. 60/341,744, filed Dec. 17, 2001, and is a continuation-in-part of U.S. patent application Ser. No. 09/757,418, filed Jan. 9, 2001, now U.S. Pat. No. 6,574,250, which claims priority from both U.S. Provisional Application No. 60/223,533, filed Aug. 4, 2000, and U.S. Provisional Application No. 60/175,337, filed Jan. 10, 2000.
TECHNICAL FIELD
• The present invention relates to laser processing of memory or other IC links and, in particular, to a laser system and method employing a set of at least two laser pulses to sever an IC link on-the-fly.
BACKGROUND OF THE INVENTION
• Yields in IC device fabrication processes often incur defects resulting from alignment variations of subsurface layers or patterns or particulate contaminants.FIGS. 1, 2A, and2B show repetitiveelectronic circuits10 of an IC device orwork piece12 that are commonly fabricated in rows or columns to include multiple iterations ofredundant circuit elements14, such asspare rows16 andcolumns18 ofmemory cells20. With reference toFIGS. 1, 2A, and2B,circuits10 are also designed to include particular laser severableconductive links22 betweenelectrical contacts24 that can be removed to disconnect adefective memory cell20, for example, and substitute a replacementredundant cell26 in a memory device such as a DRAM, an SRAM, or an embedded memory. Similar techniques are also used to sever links to program a logic product, gate arrays, or ASICs.
• Links22 are about 0.3-2 microns (μm) thick and are designed withconventional link widths28 of about 0.4-2.5 μm,link lengths30, and element-to-element pitches (center-to-center spacings)32 of about 2-8 μm from adjacent circuit structures orelements34, such aslink structures36. Although the most prevalent link materials have been polysilicon and like compositions, memory manufacturers have more recently adopted a variety of more conductive metallic link materials that may include, but are not limited to, aluminum, copper, gold, nickel, titanium, tungsten, platinum, as well as other metals, metal alloys, metal nitrides such as titanium or tantalum nitride, metal silicides such as tungsten silicide, or other metal-like materials.
• Circuits10,circuit elements14, orcells20 are tested for defects, the locations of which may be mapped into a database or program. Traditional 1.047 μm or 1.064 μm infrared (IR) laser wavelengths have been employed for more than 20 years to explosively removeconductive links22. Conventional memory link processing systems focus a single pulse of laser output having a pulse width of about 4 to 30 nanoseconds (ns) at eachlink22.FIGS. 2A and 2B show alaser spot38 of spot size (area or diameter)40 impinging alink structure36 composed of a polysilicon ormetal link22 positioned above asilicon substrate42 and between component layers of a passivation layer stack including an overlying passivation layer44 (shown inFIG. 2A but not inFIG. 2B), which is typically 500-10,000 angstrom (A) thick, and anunderlying passivation layer46.Silicon substrate42 absorbs a relatively small proportional quantity of IR radiation, andconventional passivation layers44 and46 such as silicon dioxide or silicon nitride are relatively transparent to IR radiation. Thelinks22 are typically processed “on-the-fly” such that the beam positioning system does not have to stop moving when a laser pulse is fired at alink22, with eachlink22 being processed by a single laser pulse. The on-the-fly process facilitates a very high link-processing throughput, such as processing several tens of thousands oflinks22 per second.
• FIG. 2C is a fragmentary cross-sectional side view of the link structure ofFIG. 2B after thelink22 is removed by the prior art laser pulse. To avoid damage to thesubstrate42 while maintaining sufficient energy to process a metal ornonmetal link22, Sun et al. in U.S. Pat. No. 5,265,114 and U.S. Pat. No. 5,473,624 proposed using a single 9 to 25 ns pulse at a longer laser wavelength, such as 1.3 μm, to processmemory links22 on silicon wafers. At the 1.3 μm laser wavelength, the absorption contrast between the link material andsilicon substrate42 is much larger than that at the traditional 1 μm laser wavelengths. The much wider laser processing window and better processing quality afforded by this technique has been used in the industry for about five years with great success.
• The 1.0 μm and 1.3 μm laser wavelengths have disadvantages however. The coupling efficiency of suchIR laser beams12 into a highly electrically conductivemetallic link22 is relatively poor; and the practicalachievable spot size40 of an IR laser beam for link severing is relatively large and limits the critical dimensions oflink width28,link length30 betweencontacts24, andlink pitch32. This conventional laser link processing relies on heating, melting, and evaporatinglink22, and creating a mechanical stress build-up to explosively openoverlying passivation layer44 with a single laser pulse. Such a conventional link processing laser pulse creates a large heat affected zone (HAZ) that could deteriorate the quality of the device that includes the severed link. For example, when the link is relatively thick or the link material is too reflective to absorb an adequate amount of the laser pulse energy, more energy per laser pulse has to be used. Increased laser pulse energy increases the damage risk to the IC chip. However, using a laser pulse energy within the risk-free range on thick links often results in incomplete link severing.
• U.S. Pat. No. 6,057,180 of Sun et al. and U.S. Pat. No. 6,025,256 of Swenson et al. more recently describe methods of using ultraviolet (UV) laser output to sever or expose links that “open” the overlying passivation by different material removal mechanisms and have the benefit of a smaller beam spot size. However, removal of the link itself by such a UV laser pulse entails careful consideration of the underlying passivation structure and material to protect the underlying passivation and silicon wafer from being damaged by the UV laser pulse.
• U.S. Pat. No. 5,656,186 of Mourou et al. discloses a general method of laser induced breakdown and ablation at several wavelengths by high repetition rate ultrafast laser pulses, typically shorter than 10 ps, and demonstrates creation of machined feature sizes that are smaller than the diffraction limited spot size.
• U.S. Pat. No. 5,208,437 of Miyauchi et al. discloses a method of using a single “Gaussian”-shaped pulse of a subnanosecond pulse width to process a link.
• U.S. Pat. No. 5,742,634 of Rieger et al. discloses a simultaneously Q-switched and mode-locked neodymium (Nd) laser device with diode pumping. The laser emits a series of pulses each having a duration time of 60 to 300 picoseconds (ps), under an envelope of a time duration of 100 ns.
SUMMARY OF THE INVENTION
• An object of the present invention is to provide a method or apparatus for improving the quality of laser processing of IC links.
• Another object of the invention is to process a link with a set of low energy laser pulses.
• A further object of the invention is to process a link with a set of low energy laser pulses at a shorter wavelength.
• Yet another object of the invention is to employ such sets of laser pulses to process links on-the-fly.
• The present invention employs a set of at least two laser pulses, each with a laser pulse energy within a safe range, to sever an IC link, instead of using a single laser pulse of conventional link processing systems. This practice does not, however, entail either a long dwell time or separate duplicative scanning passes of repositioning and refiring at each link that would effectively reduce the throughput by factor of about two. The duration of the set is preferably shorter than 1,000 ns, more preferably shorter than 500 ns, most preferably shorter than 300 ns and preferably in the range of 5 to 300 ns; and the pulse width of each laser pulse within the set is generally in the range of 100 femtoseconds (fs) to 30 ns. Each laser pulse within the set has an energy or peak power per pulse that is less than the damage threshold for the silicon substrate supporting the link structure. The number of laser pulses in the set is controlled such that the last pulse cleans off the bottom of the link leaving the underlying passivation layer and the substrate intact. Because the whole duration of the set is shorter than 1,000 ns, the set is considered to be a single “pulse” by a traditional link-severing laser positioning system. The laser spot of each of the pulses in the set encompasses the link width and the displacement between the laser spots of each pulse is less than the positioning accuracy of a typical positioning system, which is typically +−0.05 to 0.2 μm. Thus, the laser system can still process links on-the-fly, i.e. the positioning system does not have to stop moving when the laser system fires a set of laser pulses at each selected link.
• In one embodiment, a continuous wave (CW) mode-locked laser at high laser pulse repetition rate, followed by optical gate and an amplifier, generates sets having ultrashort laser pulses that are preferably from about 100 fs to about 10 ps. In another one embodiment, a Q-switched and CW mode-locked laser generates sets having ultrashort laser pulses that are preferably from about 100 fs to about 10 ps. Because each laser pulse within the burst set is ultrashort, its interaction with the target materials (passivation layers and metallic link) is substantially not thermal. Each laser pulse breaks off a thin sublayer of about 100-2,000 Å of material, depending on the laser energy or peak power, laser wavelength, and type of material, until the link is severed. This substantially nonthermal process may mitigate certain irregular and inconsistent link processing quality associated with thermal-stress explosion behavior of passivation layers44 oflinks22 with widths narrower than about 1 μm. In addition to the “nonthermal” and well-controllable nature of ultrashort-pulse laser processing, the most common ultrashort-pulse laser source emits at a wavelength of about 800 nm and facilitates delivery of a small-sized laser spot. Thus, the process may facilitate greater circuit density.
• In another embodiment, the sets have laser pulses that are preferably from about 25 ps to about 20 ns or 30 ns. These sets of laser pulses can be generated from a CW mode-locked laser system including an optical gate and an optional down stream amplifier, from a step-controlled acousto-optic (A-O) Q-switched laser system, from a laser system employing a beam splitter and an optical delay path, or from two or more synchronized but offset lasers that share a portion of an optical path.
• Additional objects and advantages of this invention will be apparent from the following detailed description of preferred embodiments, which proceeds with reference to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
• FIG. 1 is a schematic diagram of a portion of a DRAM showing the redundant layout of and programmable links in a spare row of generic circuit cells.
• FIGS. 2A and 2A₁are fragmentary cross-sectional side views of conventional, large semiconductor link structures, respectively with and without an underlying passivation layer, receiving a laser pulse characterized by prior art pulse parameters.
• FIG. 2B is a fragmentary top view of the link structure and the laser pulse ofFIG. 2A, together with an adjacent circuit structure.
• FIG. 2C is a fragmentary cross-sectional side view of the link structure ofFIG. 2B after the link is removed by the prior art laser pulse.
• FIG. 3 shows a power versus time graph of exemplary sets of constant amplitude laser pulses employed to sever links in accordance with the present invention.
• FIG. 4 shows a power versus time graph of alternative exemplary sets of modulated amplitude laser pulses employed to sever links in accordance with the present invention.
• FIG. 5 shows a power versus time graph of other alternative exemplary sets of modulated amplitude laser pulses employed to sever links in accordance with the present invention.
• FIG. 6 is a partly schematic, simplified diagram of an embodiment of an exemplary green laser system including a work piece positioner that cooperates with a laser processing control system for practicing the method of the present invention.
• FIG. 7 is a simplified schematic diagram of one laser configuration that can be employed to implement the present invention.
• FIG. 8 is a simplified schematic diagram of an alternative embodiment of a laser configuration that can be employed to implement the present invention.
• FIG. 9 shows a power versus time graph of alternative exemplary sets of modulated amplitude laser pulses employed to sever links in accordance with the present invention.
• FIG. 10A shows a power versus time graph of a typical single laser pulse emitted by a conventional laser system to sever a link.
• FIG. 10B shows a power versus time graph of an exemplary set of laser pulses emitted by a laser system with a step-controlled Q-switch to sever a link.
• FIG. 11 is a power versus time graph of an exemplary RF signal applied to a step-controlled Q-switch.
• FIG. 12 is a power versus time graph of exemplary laser pulses that can be generated through a step-controlled Q-switch employing the RF signal shown inFIG. 11.
• FIG. 13 is a simplified schematic diagram of an alternative embodiment of a laser system that can be employed to implement the present invention.
• FIGS. 14A-14D show respective power versus time graphs of an exemplary laser pulses propagating along separate optical paths of the laser system shown inFIG. 14.
• FIG. 15 is a simplified schematic diagram of an alternative embodiment of a laser system that employs two or more lasers to implement the present invention.
• FIGS. 16A-16C show respective power versus time graphs of exemplary laser pulses propagating along separate optical paths of the laser system shown inFIG. 16.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
• FIGS. 3-5,9,10B,12,14D, and16C show power versus time graphs ofexemplary sets50a,50b,50c,50d,50e,50f, and50g(generically sets50) oflaser pulses52a,52b₁-52b₈,52c₁-52c₅,52d₁-52d₃,52e₁-52e₄,52f₁-52f₂, and52g₁-52g₂(generically laser pulses52) employed to severlinks22 in accordance with the present invention. Preferably, each set50 severs asingle link22. Preferred sets50 include 2 to 50 pulses52. The duration of each set50 is preferably shorter than about 1000 ns, more preferably shorter than 500 ns, and most preferably in the range of about 5 ns to 300 ns. Sets50 are time-displaced by a programmable delay interval that is typically shorter than 0.1 millisecond and may be a function of the speed of thepositioning system62 and the distance between thelinks22 to be processed. The pulse width of each laser pulse52 within set50 is in the range of about 100 fs to about 30 ns.
• During a set50 of laser pulses52, each laser pulse52 has insufficient heat, energy, or peak power to fully sever alink22 or damage the underlyingsubstrate42 but removes a part oflink22 and/or anyoverlying passivation layer44. At a preferred wavelength from about 150 nm to about 1320 nm, preferred ablation parameters offocused spot size40 of laser pulses52 include laser energies of each laser pulse between about 0.005 μJ to about 1 μJ (and intermediate energy ranges between 0.01 μJ to about 0.5 μJ) and laser energies of each set between 0.01 μJ to about 2 μJ and at greater than about 1 Hz, and preferably 1 kHz to 40 kHz or higher. The focused laser spot diameter is preferably 50% to 100% larger than the width of thelink22, depending on thelink width28, linkpitch size32, link material and other link structure and process considerations.
• Depending on the wavelength of laser output and the characteristics of the link material, the severing depth of pulses52 applied to link22 can be accurately controlled by choosing the energy of each pulse52 and the number of laser pulses52 in each set50 to clean off the bottom of any givenlink22, leavingunderlying passivation layer46 relatively intact andsubstrate42 undamaged. Hence, the risk of damage tosilicon substrate42 is substantially eliminated, even if a laser wavelength in the UV range is used.
• The energy density profile of each set50 of laser pulses52 can be controlled better than the energy density profile of a conventional single link-severing laser pulse. With reference toFIG. 3, eachlaser pulse52acan be generated with the same energy density to provide a pulse set50awith a consistent “flat-top” energy density profile. Set50acan, for example, be accomplished with a mode-locked laser followed by an electro-optic (E-O) or acousto-optic (A-O) optical gate and an optional amplifier (FIG. 8).
• With reference toFIG. 4, the energy densities of pulses52b₁-52b₈(generically52b) can be modulated so that sets50bof pulses52bcan have almost any predetermined shape, such as the energy density profile of a conventional link-blowing laser pulse with a gradual increase and decrease of energy densities over pulses52b₁-52b₈.Sets50bcan, for example, be accomplished with a simultaneously Q-switched and CW mode-lockedlaser system60 shown inFIG. 6. Sequential sets50 may have different peak power and energy density profiles, particularly iflinks22 with different characteristics are being processed.
• FIG. 5 shows an alternative energy density profile of pulses52c₁-52c₅(generically52c) that have sharply and symmetrically increasing and decreasing oversets50c.Sets50ccan be accomplished with a simultaneously Q-switched and CW mode-lockedlaser system60 shown inFIG. 6.
• Another alternative set50 that is not shown has initial pulses52 with high energy density and trailing pulses52 with decreasing energy density. Such an energy density profile for a set50 would be useful to clean out the bottom of the link without risk of damage to a particularly sensitive work piece.
• FIG. 6 shows a preferred embodiment of asimplified laser system60 including a Q-switched and/or CW mode-lockedlaser64 for generating sets50 of laser pulses52 desirable for achieving link severing in accordance with the present invention. Preferred laser wavelengths from about 150 nm to about 2000 nm include, but are not limited to, 1.3, 1.064, or 1.047, 1.03-1.05, 0.75-0.85 μm or their second, third, fourth, or fifth harmonics from Nd:YAG, Nd:YLF, Nd:YVO₄, Yb:YAG, or Ti:Sapphire lasers64. Skilled persons will appreciate that lasers emitting at other suitable wavelengths are commercially available, including fiber lasers, and could be employed.
• Laser system60 is modeled herein only by way of example to a second harmonic (532 nm) Nd:YAG laser64 since the frequency doubling elements can be removed to eliminate the harmonic conversion. The Nd:YAG or other solid-state laser64 is preferably pumped by alaser diode70 or a laser diode-pumped solid-state laser, theemission72 of which is focused bylens components74 intolaser resonator82.Laser resonator82 preferably includes alasant84, preferably with a short absorption length, and a Q-switch86 positioned between focusing/folding mirrors76 and78 along anoptic axis90. Anaperture100 may also be positioned betweenlasant84 and mirror78.Mirror76 reflects light to mirror78 and to a partlyreflective output coupler94 that propagateslaser output96 alongoptic axis98. Mirror78 is adapted to reflect a portion of the light to a semiconductor saturableabsorber mirror device92 for mode locking thelaser64. Aharmonic conversion doubler102 is preferably placed externally toresonator82 to convert the laser beam frequency to the secondharmonic laser output104. Skilled persons will appreciate that where harmonic conversion is employed, agating device106, such as an E-O or A-O device can be positioned before the harmonic conversion apparatus to gate or finely control the harmonic laser pulse energy.
• Skilled persons will appreciate that any of the second, third, or fourth harmonics of Nd:YAG (532 mm, 355 mm, 266 mm); Nd:YLF (524 mm, 349 nm, 262 nm) or the second harmonic of Ti:Sapphire (375-425 mm) can be employed to preferably process certain types oflinks22 using appropriate well-known harmonic conversion techniques. Harmonic conversion processes are described in pp. 138-141, V. G. Dmitriev, et. al., “Handbook of Nonlinear Optical Crystals”, Springer-Verlag, New York, 1991 ISBN 3-540-53547-0.
• Anexemplary laser64 can be a mode-locked Ti-Sapphire ultrashort pulse laser with a laser wavelength in the near IR range, such as 750-850 mm. Spectra Physics makes a Ti-Sapphire ultra fast laser called the MAI TAI™ which provides ultrashort pulses52 having a pulse width of 100 femtoseconds (fs) at 1 W of power in the 750 to 850 mm range at a repetition rate of 80 MHz. Thislaser64 is pumped by a diode-pumped, frequency-doubled, solid-state green YAG laser (5 W or 10 W). Other exemplary ultrafast Nd:YAG or Nd:YLF lasers64 include the JAGUAR-QCW-1000™ and the JAGUAR-CW-250™ sold by Time-Bandwidth® of Zurich, Switzerland.
• FIG. 7 shows a schematic diagram of a simplified alternative configuration of alaser system108 for employing the present invention. Skilled persons will appreciate that for harmonically converted green and longer wavelength light, theE-O device106 is preferably positioned after theharmonic conversion converter102.
• FIG. 8 shows a schematic diagram of another simplified alternative configuration of alaser system110 for that employs anamplifier112.
• Skilled person will appreciate that a Q-switchedlaser64 without CW mode-locking is preferred for several embodiments, particularly for applications employing pulse widths greater than 0.1 ps.Such laser systems60 does not employ a saturable absorber andoptical paths90 and98 are collinear. Suchalternative laser systems60 are commercially available and well known to skilled practitioners.
• Laser output104 (regardless of wavelength or laser type) can be manipulated by a variety of conventionaloptical components116 and118 that are positioned along abeam path120.Components116 and118 may include a beam expander or other laser optical components to collimatelaser output104 to produce a beam with useful propagation characteristics. One or morebeam reflecting mirrors122,124,126 and128 are optionally employed and are highly reflective at the laser wavelength desired, but highly transmissive at the unused wavelengths, so only the desired laser wavelength will reachlink structure36. A focusinglens130 preferably employs an F1, F2, or F3 single component or multicomponent lens system that focuses the collimated pulsedlaser system output140 to produce afocused spot size40 that is greater than thelink width28, encompasses it, and is preferably less than 2 μm in diameter or smaller depending on thelink width28 and the laser wavelength.
• A preferredbeam positioning system62 is described in detail in U.S. Pat. No. 4,532,402 of Overbeck.Beam positioning system62 preferably employs alaser controller160 that controls at least two platforms or stages (stacked or split-axis) and coordinates withreflectors122,124,126, and128 to target and focuslaser system output140 to a desiredlaser link22 on IC device orwork piece12.Beam positioning system62 permits quick movement betweenlinks22 onwork piece12 to effect unique link-severing operations on-the-fly based on provided test or design data.
• The position data preferably direct thefocused laser spot38 overwork piece12 to targetlink structure36 with one set50 of laser pulses52 oflaser system output140 to removelink22. Thelaser system60 preferably severs each link22 on-the-fly with a single set50 of laser pulses52 without stopping thebeam positioning system62 over anylink22, so high throughput is maintained. Because the sets50 are less than about 1,000 ns, each set50 is treated like a single pulse by positioningsystem62, depending on the scanning speed of thepositioning system62. For example, if apositioning system62 has a high speed of about 200 mm per second, then a typical displacement between twoconsecutive laser spots38 with interval time of 1,000 ns between them would be typically less than 0.2 μm and preferably less then 0.06 μm during a preferred time interval of set50, so two or moreconsecutive spots38 would substantially overlap and each of thespots38 would completely cover thelink width28. In addition to control of the repetition rate, the time offset between the initiation of pulses52 within a set50 is typically less than 1,000 ns and preferably between about 5 ns and 500 ns and can also be programmable by controlling Q-switch stepping, laser synchronization, or optical path delay techniques as later described.
• Laser controller160 is provided with instructions concerning the desired energy and pulse width of laser pulses52, the number of pulses52, and/or the shape and duration of sets50 according to the characteristics oflink structures36.Laser controller160 may be influenced by timing data that synchronizes the firing oflaser system60 to the motion of the platforms such as described in U.S. Pat. No. 5,453,594 of Konecny for Radiation Beam Position and Emission Coordination System. Alternatively, skilled persons will appreciate thatlaser controller160 may be used for extracavity modulation of laser energy via an E-O or anA-O device106 and/or may optionally instruct one or more subcontrollers164 that control Q-switch86 orgating device106.Beam positioning system62 may alternatively or additionally employ the improvements or beam positioners described in U.S. Pat. No. 5,751,585 of Cutler et al. or U.S. Pat. No. 6,430,465 B2 of Cutler, which are assigned to the assignee of this application. Other fixed head, fast positioner head such as galvanometer, piezoelectrically, or voice coil-controlled mirrors, or linear motor driven conventional positioning systems or those employed in the 9300 or 9000 model series manufactured by Electro Scientific Industries, Inc. (ESI) of Portland, Oreg. could also be employed.
• With reference again toFIGS. 3-5, in some embodiments, each set50 of laser pulses52 is preferably a burst of ultrashort laser pulses52, which are generally shorter than 25 ps, preferably shorter than or equal to 10 ps, and most preferably from about 10 ps to100 fs or shorter. The laser pulse widths are preferably shorter than 10 ps because material processing with such laser pulses52 is believed to be a nonthermal process unlike material processing with laser pulses of longer pulse widths.
• During a set50 of ultrashort laser pulses52, each laser pulse52 pits off a small part or sublayer of thepassivation layer44 and/or link material needed to be removed without generating significant heat inlink structure36 orIC device12. Due to its extremely short pulse width, each pulse exhibits high laser energy intensity that causes dielectric breakdown in conventionally transparent passivation materials. Each laser pulse breaks off a thin sublayer of, for example, about 1,000-2,000 Å ofoverlying passivation layer44 until overlyingpassivation layer44 is removed. Consecutive ultrashort laser pulses52 ablatemetallic link22 in a similar layer by layer manner. For conventionally opaque material, each ultrashort pulse52 ablates a sublayer having a thickness comparable to the absorption depth of the material at the wavelength used. The absorption or ablation depth per single ultrashort laser pulse for most metals is about 100-300 Å.
• Although in many circumstances a wide range of energies per ultrashort laser pulse52 will yield substantially similar severing depths, in a preferred embodiment, each ultrashort laser pulse52 ablates about a 0.02-0.2 μm depth of material withinspot size40. When ultrashort pulses are employed, preferred sets50 include 2 to 20 ultrashort pulses52.
• In addition to the “nonthermal” and well-controllable nature of ultrashort laser processing, some common ultrashort laser sources are at wavelengths of around 800 nm and facilitate delivery of a small-sized laser spot. Skilled persons will appreciate, however, that the substantially nonthermal nature of material interaction with ultrashort pulses52 permits IR laser output be used onlinks22 that are narrower without producing an irregular unacceptable explosion pattern. Skilled persons will also appreciate that due to the ultrashort laser pulse width and the higher laser intensity, a higher laser frequency conversion efficiency can be readily achieved and employed.
• With referenceFIGS. 9-16, in some embodiments, each set50 preferably includes 2 to 10 pulses52, which are preferably in the range of about 0.1 ps to about 30 ns and more preferably from about 25 ps to 30 ns or ranges in between such as from about 100 ps to 10 ns or from 5 ns to 20 ns. These typically smaller sets50 of laser pulses52 may be generated by additional methods and laser system configurations. For example, with reference toFIG. 9, the energy densities of pulses52dofset50dcan accomplished with a simultaneously Q-switched and CW mode-locked laser system60 (FIG. 6).
• FIG. 10A depicts an energy density profile of typical laser output from a conventional laser used for link blowing.FIG. 10B depicts an energy density profile of a set50eof laser pulses52e₁and52e₂emitted from a laser system60 (with or without mode-locking) that has a step-controlled Q-switch86. Skilled persons will appreciate that the Q-switch can alternatively be intentionally misaligned for generating more than one laser pulse52. Set50edepicts one of a variety of different energy density profiles that can be employed advantageously to severlinks22 oflink structures36 having different types and thicknesses of link or passivation materials. The shape ofset50ccan alternatively be accomplished by programming the voltage to an E-O or A-O gating device or by employing and changing the rotation of a polarizer.
• FIG. 11 is a power versus time graph of anexemplary RF signal54 applied to a step-controlled Q-switch86. Unlike typical laser Q-switching which employs an all or nothing RF signal and results in a single laser pulse (typically elimination of the RF signal allows the pulse to be generated) to process alink22, step-controlled Q-switching employs one or more intermediate amounts ofRF signal54 to generate one or more quickly sequential pulses52e₃and52e₄, such as shown inFIG. 12, which is a power versus time graph.
• With reference toFIGS. 11 and 12,RF level54ais sufficient to prevent generation of a laser pulse52e. TheRF signal54 is reduced to anintermediate RF level54bthat permits generation of laser pulse52e₃, and then theRF signal54 is eliminated toRF level54cto permit generation of laser pulse52e₄. The step-control Q-switching technique causes the laser pulse52e₃to have a peak-instantaneous power that is lower than that of a given single unstepped Q-switched laser pulse and allows generation of additional laser pulse(s)52e₄of peak-instantaneous powers that are also lower than that of the given single unstepped Q-switched laser pulse. The amount and duration ofRF signal54 atRF level54bcan be used to control the peak-instantaneous powers of pulses52e₃and52e₄as well as the time offset between the laser pulses52 in each set50. More that two laser pulses52ecan be generated in each set50e, and the laser pulses52emay have equal or unequal amplitudes within or between sets50eby adjusting the number of steps and duration of theRF signal54.
• FIG. 13 is a simplified schematic diagram of an alternative embodiment of alaser system60bemploying a Q-switchedlaser64b(with or without CW-mode-locking) and having anoptical delay path170 that diverges frombeam path120, for example.Optical delay path170 preferably employs abeam splitter172 positioned alongbeam path120.Beam splitter172 diverts a portion of the laser light frombeam path120 and causes a portion of the light to propagate alongbeam path120aand a portion of the light to propagate alongoptical delay path170 toreflective mirrors174aand174b, through an optionalhalf wave plate176 and then tocombiner178.Combiner178 is positioned alongbeam path120 downstream ofbeam splitter172 and recombines theoptical delay path170 with thebeam path120ainto asingle beam path120b. Skilled persons will appreciate thatoptical delay path170 can be positioned at a variety of other locations betweenlaser64bandlink structure36, such as between output coupling mirror78 andoptical component116 and may include numerous mirrors174 spaced by various distances.
• FIGS. 14A-14D show respective power versus time graphs of exemplary laser pulses52fpropagating alongoptical paths120,120a,120b, and170 of thelaser system60bshown inFIG. 13. With reference toFIGS. 13 and 14A-14D,FIG. 14A shows the power versus time graph of alaser output96 propagating alongbeam path120.Beam splitter172 preferably splitslaser output96 into equal laser pulses52fofFIGS. 14B and 52f₂ofFIG. 14C (generically laser pulses52f), which respectively propagate alongoptical path120aandoptical delay path170. After passing through the optionalhalf wave plate176, laser pulse52f₂passes throughcombiner178 where it is rejoined with laser pulse52f₁propagate alongoptical path120b.FIG. 14D shows the resultant power versus time graph of laser pulses52f, and52f₂propagating alongoptical path120b. Becauseoptical delay path170 is longer thanbeam path120a, laser pulse52f₂occurs alongbeam path120bat a time later than52f₁.
• Skilled persons will appreciate that the relative power of pulses52 can be adjusted with respect to each other by adjusting the amounts of reflection and/or transmission permitted bybeam splitter172. Such adjustments would permit modulated profiles such as those discussed or presented inprofiles50c. Skilled persons will also appreciate that the length ofoptical delay path170 can be adjusted to control the timing of respective pulses52f. Furthermore, additional delay paths of different lengths and/or of dependent nature could be employed to introduce additional pulses at a variety of time intervals and powers.
• Skilled persons will appreciate that one or more optical attenuators can be positioned along common portions of the optical path or along one or both distinct portions of the optical path to further control the peak-instantaneous power of the laser output pulses. Similarly, additional polarization devices can be positioned as desired along one or more of the optical paths. In addition, different optical paths can be used to generate pulses52 of different spot sizes within a set50.
• FIG. 15 is a simplified schematic diagram of an alternative embodiment of alaser system60cthat employs two or more lasers64c₁and64c₂(generally lasers64) to implement the present invention, andFIGS. 16A-16C show respective power versus time graphs of an exemplary laser pulses52g₁and52g₂(generically52g) propagating alongoptical paths120c,120d, and120eoflaser system60cshown inFIG. 15. With reference toFIGS. 15 and 16A-16C,lasers64 are preferably Q-switched (preferably not CW mode-locked) lasers of types previously discussed or well-known variations and can be of the same type or different types. Skilled persons will appreciate thatlasers64 are preferably the same type and their parameters are preferably controlled to produce similar spot sizes, pulse energies, and peak powers.Lasers64 can be triggered by synchronizingelectronics180 such that the laser outputs are separated by a desired or programmable time interval. A preferred time interval includes about 5 ns to about 1,000 ns.
• Laser64c₁emits laser pulse52g₁that propagates alongoptical path120cand then passes through acombiner178, and laser64C₂emits laser pulse52g₂that propagates alongoptical path120dand then passes through an optionalhalf wave plate176 and thecombiner178, such that both laser pulses52g₁and52g₂propagate alongoptical path120ebut are temporally separated to produce a set50gof laser pulses52ghaving a power versus time profile shown inFIG. 16C.
• With respect to all the embodiments, preferably each set50 severs asingle link22. In most applications, the energy density profile of each set50 is identical. However, when awork piece12 includes different types (different materials or different dimensions) oflinks22, then a variety of energy density profiles (heights and lengths and as well as the shapes) can be applied as thepositioning system62 scans over thework piece12.
• In view of the foregoing, link processing with sets50 of laser pulses52 offers a wider processing window and a superior quality of severed links than does conventional link processing without sacrificing throughput. The versatility of pulses52 in sets50 permits better tailoring to particular link characteristics.
• Because each laser pulse52 in the laser pulse set50 has less laser energy, there is less risk of damaging the neighboring passivation and thesilicon substrate42. In addition to conventional link blowing IR laser wavelengths, laser wavelengths shorter than the IR can also be used for the process with the added advantage of smaller laser beam spot size, even though the silicon wafer's absorption at the shorter laser wavelengths is higher than at the conventional IR wavelengths. Thus, the processing of narrower and denser links is facilitated. This better link removal resolution permitslinks22 to be positioned closer together, increasing circuit density. Althoughlink structures36 can have conventional sizes, thelink width28 can, for example, be less than or equal to about 0.5 μm.
• Similarly, passivation layers44 above or below thelinks22 can be made with material other than the traditional SiO2 and SiN, such as the low k material, or can be modified if desirable to be other than a typical height since the sets50 of pulses52 can be tailored and since there is less damage risk to the passivation structure. In addition, center-to-center pitch32 betweenlinks22 processed with sets50 of laser pulses52 can be substantially smaller than thepitch32 betweenlinks22 blown by a conventional IR laser beam-severing pulse.Link22 can, for example, be within a distance of 2.0 μm or less fromother links22 oradjacent circuit structures34.
• It will be obvious to those having skill in the art that many changes may be made to the details of the above-described embodiment of this invention without departing from the underlying principles thereof. The scope of the present invention should, therefore, be determined only by the following claims.

Claims (24)

1. A method for laser severing a conductive link in an integrated circuit (IC), the method comprising:

providing position data representative of locations of one or more conductive links;

generating at least two laser pulses, the laser pulses including a first laser pulse and a second laser pulse, each of the first and second laser pulses producing a laser spot at the integrated circuit; and

directing, based on the position data, the laser pulses to a selected conductive link to sever the selected conductive link, wherein the laser spots are in movement relative to the selected conductive link while the laser pulses are directed to the selected conductive link, the first and second laser pulses are sequentially directed to the selected conductive link, and at least one of the first and second laser pulses removes a depth of link material that is less than the link thickness.

2. The method ofclaim 1, wherein the step of directing the laser pulses includes providing a focusing lens that is in relative movement with respect to the selected conductive link while the laser pulses are directed to the selected conductive link.

3. The method ofclaim 1, comprising directing the laser pulses through a gating device.

4. The method ofclaim 1, wherein the selected conductive link comprises a link of a memory device or a logic device.

5. The method ofclaim 1, wherein a passivation layer overlies the selected conductive link.

6. The method ofclaim 1, wherein a burst comprising the laser pulses has a width less than 500 ns.

7. The method ofclaim 6, wherein the burst comprises more than two laser pulses.

8. The method ofclaim 1, wherein the second laser pulse starts after the end of the first laser pulse.

9. The method ofclaim 1, wherein each of the laser pulses has energy characteristics, and the number of laser pulses and the energy characteristics of each of the laser pulses are determined as a function of the thickness of the selected conductive link to be severed.

10. The method ofclaim 1, wherein the selected conductive link has a width less than or equal to about 1 μm.

11. The method ofclaim 1, wherein the step of generating the laser pulses is performed using a mode locked laser.

12. The method ofclaim 1, wherein the step of directing the laser pulses to the selected conductive link includes producing first and second laser spots of the first and second laser pulses, respectively, that overlap at the selected conductive link.

13. The method ofclaim 1, wherein each of the first and second laser pulses has a single peak pulse shape.

14. The method ofclaim 1, wherein the laser pulses have an ultraviolet (UV) or near UV wavelength.

15. The method ofclaim 1, wherein a spot size of at least one of the laser pulses is greater than a width of the selected conductive link.

16. The method ofclaim 1, wherein the step of generating the laser pulses is performed using a Q-switched laser.

17. The method ofclaim 1, wherein the step of generating the laser pulses includes using an A-O, Q-switched, solid-state laser having an A-O Q-switch that is step controlled such that an RF signal to the Q-switch is reduced from a high power level to an intermediate level to generate the first laser pulse, and the RF signal to the Q-switch is reduced from the intermediate RF level to a smaller RF level to generate the second laser pulse.

18. The method ofclaim 1, wherein at least one of the laser pulses has a pulse width of less than 25 picoseconds.

19. The method ofclaim 1, wherein the step of generating the laser pulses comprises first generating two or more laser pulses and second generating two or more laser pulses to sever respective conductive links, wherein the laser pulses in the first and second generating steps have different energy density profiles.

20. The method ofclaim 1, wherein the first and second laser pulses have different energy characteristics.

21. The method ofclaim 1, wherein the first and second laser pulses have different energy densities.

22. The method ofclaim 1, wherein the step of generating the laser pulses comprises using harmonic conversion.

23. A method for laser severing a conductive link in an integrated circuit (IC), the method comprising:

providing position data representative of locations of one or more conductive links;

generating at least two laser pulses, the laser pulses including a first laser pulse and a second laser pulse; and

directing, based on the position data, the laser pulses to a selected conductive link to sever the selected conductive link, wherein the first and second laser pulses are sequentially directed to the selected conductive link, and at least one of the first and second laser pulses removes a depth of link material that is less than the link thickness.

24. A method for laser severing a conductive link in an integrated circuit (IC), the method comprising:

providing position data representative of locations of one or more conductive links;

generating a beam comprising at least two laser pulses, the laser pulses including a first laser pulse and a second laser pulse; and

directing, based on the position data, the laser pulses to a selected conductive link to sever the selected conductive link, wherein the selected conductive link and the beam are in relative movement while the laser pulses are directed to the selected conductive link, the first and second laser pulses are sequentially directed to the selected conductive link, and at least one of the first and second laser pulses removes a depth of link material that is less than the link thickness.

Images