US20060086977A1 - Nonplanar device with thinned lower body portion and method of fabrication - Google Patents
Nonplanar device with thinned lower body portion and method of fabricationDownload PDFInfo
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- US20060086977A1 US20060086977A1US10/973,228US97322804AUS2006086977A1US 20060086977 A1US20060086977 A1US 20060086977A1US 97322804 AUS97322804 AUS 97322804AUS 2006086977 A1US2006086977 A1US 2006086977A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
- H10D30/6213—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections having rounded corners
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H10D30/6217—Fin field-effect transistors [FinFET] having non-uniform gate electrodes, e.g. gate conductors having varying doping
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/011—Manufacture or treatment comprising FinFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
- H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13067—FinFET, source/drain region shapes fins on the silicon surface
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Definitions
- the present inventionrelates to the field of semiconductor devices and more particularly to a nonplanar tri-gate transistor having a thinned lower body portion and method of fabrication.
- silicon on insulator (SOI) transistorshave been proposed.
- Silicon on insulator (SOI) transistorshave an advantage in that they can be operated in a fully depleted manner.
- Fully depleted transistorshave an advantage of ideal subthreshold gradients for optimized ON current/OFF current ratios.
- Tri-gate transistor 100includes a silicon body 104 formed on an insulating substrate 102 having a buried oxide layer 103 formed on a monocrystalline silicon substrate 105 .
- a gate dielectric layer 106is formed on the top and sidewalls of the silicon body 104 as shown in FIG. 1 .
- a gate electrode 108is formed on the gate dielectric layer and surrounds the body 104 on three sides, essentially providing a transistor 100 having three gate electrodes (G 1 , G 2 , G 3 ), one on each of the sidewalls of the silicon body 104 and one on the top surface of the silicon body 104 .
- a source region 110 and a drain region 112are formed in the silicon body 104 on opposite sides of the gate electrode 108 as shown in FIG. 1 .
- tri-gate transistor 100exhibits good short channel effects (SCE).
- SCEshort channel effects
- One reason tri-gate transistor 100 achieves good short channel effectsis that the nonplanarity of the device places the gate electrode 108 in such a way as to surround the active channel region. That is, in the tri-gate device, the gate electrode 108 is in contact with three sides of the channel region. Unfortunately, the fourth side, the bottom part of the channel is isolated from the gate electrode by the buried oxide layer 103 and thus is not under close gate control.
- FIG. 1is an illustration of a nonplanar or tri-gate device.
- FIGS. 2A and 2Billustrate a tri-gate or nonplanar device with a thinned lower body portion in accordance with the present invention.
- FIG. 3Aillustrates a nonplanar device having multiple thinned lower body portions.
- FIG. 3Bis an illustration of a nonplanar device having a thinned lower body portion and including sidewall spacers, source/drain extensions and silicided source/drain regions.
- FIGS. 4A-4Hillustrate a method of forming a nonplanar device with a thinned lower body portion in accordance with an embodiment of the present invention.
- the present inventionis a novel nonplanar device with a thinned lower body portion and a method of fabrication.
- numerous specific detailsare set forth in order to provide a thorough understanding of the present invention.
- well known semiconductor processes and manufacturing techniqueshave not been described in particular detail in order to not unnecessarily obscure the present invention.
- Embodiments of the present inventioninclude a nonplanar or tri-gate transistor having a semiconductor body which is wrapped around on three sides by a gate dielectric layer and a gate electrode.
- the bottom portion of the semiconductor bodyis made thinner than the top portion of the semiconductor body. Making the bottom portion of the semiconductor body thinner than the top portion increases the gate control over the bottom portion of the body resulting in better short channel effects.
- a semiconductor filmis etched into a semiconductor body utilizing a dry etching process which utilizes a first process gas chemistry and a first RF bias. After forming the semiconductor body, the lower portion of the body is thinned utilizing the same etch chemistry and equipment but utilizing a lower RF bias in order to inwardly taper or facet the lower body portion.
- FIGS. 2A and 2Billustrate a nonplanar or tri-gate device 200 having a semiconductor body with a thinned lower body portion.
- FIG. 2Ais an overhead/side view of transistor 200 while FIG. 2B is an illustration of a cross-sectional view taken through the gate electrode.
- Transistor 200is formed on a substrate 202 and includes a semiconductor body or fin 204 .
- a gate dielectric layer 206is formed on the top surface 234 and sidewalls 230 and 232 of a semiconductor body 204 .
- a gate electrode 208is formed on the gate dielectric layer 206 and surrounds the semiconductor body or fin on three sides.
- a source regions 210 and a drain region 212are formed in the semiconductor body on opposite sides of the gate electrode 208 as shown in FIG. 2A .
- the semiconductor body 204has a bottom portion 222 which is thinner than the top portion 224 . That is, the distance between the sidewalls 230 and 232 is greater at the top surface 234 than at the bottom surface 236 .
- sidewalls 230 and 232 of the top portion 224are substantially vertical and are spaced a uniform distance apart while the sidewalls 230 and 232 of the bottom portion 222 , are faceted or inwardly tapered to reduce the distance between the sidewalls 230 and 232 in the bottom portion.
- the distance between the sidewalls 230 and 232 near the bottom surfaceis between 1 ⁇ 2 to 2 ⁇ 3 the distance between the sidewalls 230 and 232 near the top surface 234 .
- the sidewalls 230 and 232begin to taper inwardly at approximately the midpoint of the height 238 of the semiconductor body 204 (i.e., sidewalls start tapering inwardly at the midpoint between the top surface 234 and bottom surface 236 ).
- the distance between the sidewalls 230 and 232 at the top surface 234is between 20-30 nanometers while the distance between the sidewalls 230 and 232 near the bottom surface 236 is between 10-15 nanometers.
- the bottom portion 222 of the semiconductor body 204is made sufficiently thin so that the gate control of the bottom portion is made similar to the gate control of the top portion. In an embodiment of the present invention, the bottom portion 222 of the semiconductor body 204 is made sufficiently thin relative to the top portion to improve the short channel effects of transistor 200 .
- the semiconductor body 204can have a pair of sidewalls 230 and 232 which continually taper inward from the top surface 234 to the bottom surface 236 .
- the semiconductor body 204can have sidewalls 230 and 232 which continually taper inward from the top surface to the bottom surface and reach the bottom surface 236 at a point or substantially at point 502 .
- FIG. 5Athe semiconductor body 204 can have a pair of sidewalls 230 and 232 which continually taper inward from the top surface 234 to the bottom surface 236 .
- the semiconductor body 204can have sidewalls 230 and 232 which continually taper inward from the top surface to the bottom surface and reach the bottom surface 236 at a point or substantially at point 502 .
- the semiconductor body 204can have a pair of sidewalls 230 and 232 which include an upper vertical portion 510 separated by uniform distance, a middle inwardly tapered portion 512 and a lower portion 514 of vertical sidewalls separated by a second distance which is less than the distance separating the top portion sidewalls 510 .
- the semiconductor bodycan have an upper portion 224 where the sidewalls 230 and 232 are faceted or tapered inwardly and a bottom portion 222 where the sidewalls 230 and 232 are vertical or substantially vertical. In each of the example illustrated in FIGS.
- the distance between the sidewalls 230 and 232 of semiconductor body 204 on the top surfaceis greater than the distance between the semiconductor body on the bottom surface.
- the gate electrode 208can have better control of the semiconductor body at the bottom surface and thereby improve the short channel effects of the device.
- the tri-gate transistor 200is formed on an insulating substrate 202 which includes a lower monocrystalline silicon substrate 250 upon which is formed an insulating layer 252 , such as a silicon dioxide film.
- insulating layer 252is a buried oxide layer of an SOI substrate.
- the tri-gate transistor 200can be formed on any well known insulating substrate, such as substrates formed from silicon dioxide, nitrides, oxides, and sapphires.
- Semiconductor body 204is formed on insulating layer 252 of insulating substrate 202 .
- Semiconductor body 204can be formed on any well known material, such as but not limited to silicon (Si), germanium (Ge), silicon germanium (Si x Ge y ), gallium arsenide (GaAs), InSb, GaP and GaSb.
- Semiconductor body 204can be formed of any well known material which can be reversely altered from an insulating state to a conductive state by applying external electrical controls.
- Semiconductor body 204is ideally a single crystalline film when best electrical performance of transistor 200 is desired.
- semiconductor body 204is a single crystalline film when transistor 200 is used in higher performance applications, such as high density circuit, such as a microprocessor.
- Semiconductor body 204can be a polycrystalline film when transistor 200 is used in applications requiring less stringent performance, such as liquid crystal displays.
- Insulator 252isolate semiconductor body 204 from the monocrystalline silicon substrate 250 .
- semiconductor body 204is a single crystalline silicon film.
- Gate dielectric layer 206is formed on and around three sides of semiconductor body 204 as shown in FIGS. 2A and 2B . Gate dielectric layer 206 is formed on or adjacent to sidewall 230 , on the top surface 234 of body 204 and on or adjacent to sidewall 232 of body 204 as shown in FIGS. 2A and 2B . Gate dielectric layer 206 can be any well known gate dielectric layer. In an embodiment of the present invention, the gate dielectric layer is a silicon dioxide (SiO 2 ), silicon oxynitride (SiO x N y ) or a silicon nitride (Si 3 N 4 ) dielectric layer.
- the gate dielectric layer 206is a silicon oxynitride film formed to a thickness between 5-20 ⁇ .
- gate dielectric layer 206is a high k gate dielectric layer, such as a metal oxide dielectric, such as but not limited to tantalum pentaoxide (TaO 5 ), titanium oxide (TiO 2 ) and hafnium oxide (HfO).
- Gate dielectric layer 206can be other types of high k dielectric layers, such as but not limited to PZT and BST.
- Gate electrode 208is formed on and around gate dielectric layer 206 as shown in FIGS. 2A and 2B .
- Gate electrode 208is formed on or adjacent to gate dielectric layer 206 formed on sidewall 230 of semiconductor body 204 is formed on gate dielectric layer 206 formed on the top surface 234 of semiconductor body 204 and is formed adjacent to or on gate dielectric layer 206 formed on sidewall 232 of semiconductor body 204 .
- Gate electrode 208has a pair of laterally opposite sidewalls 260 and 262 separated by a distance which defines the gate length (Lg) 264 of transistor 200 .
- laterally opposite sidewalls 260 and 262 of gate electrode 208run in a direction perpendicular to sidewalls 230 and 232 of semiconductor body 204 .
- Gate electrode 208can be formed of any suitable gate electrode material.
- gate electrode 208comprises a polycrystalline silicon film doped to a concentration density between 1 ⁇ 10 9 atoms/cm 3 to 1 ⁇ 10 20 atoms/cm 3 .
- the gate electrodecan be a metal gate electrode, such as but not limited to tungsten, tantalum, titanium and their nitrides.
- the gate electrodeis formed from a material having a midgap workfunction between 4.5 to 4.8 eV. It is to be appreciated that gate electrode 208 need not necessarily be a single material and can be a composite stack of thin films, such as but not limited to polycrystalline silicon/metal electrode or metal/polycrystalline silicon electrode.
- Transistor 200has a source region 210 and a drain region 212 .
- Source region 210 and drain region 212are formed in semiconductor 204 on opposite sides of gate electrode 208 as shown in FIG. 2A .
- Source region 210 and drain region 212are formed to an n type conductivity type when forming a NMOS transistor and are formed to a p type conductivity when forming a PMOS device.
- source region 210 and drain region 212have a doping concentration between 1 ⁇ 10 9 atoms/cm 3 to 1 ⁇ 10 21 atoms/cm 3 .
- Source region 210 and drain region 212can be formed of the uniform concentration or can include subregions of different concentrations or dopant profiles, such as tip regions (e.g., source/drain extensions) and contact regions.
- source region 210 and drain region 212when transistor 200 is a symmetrical transistor, source region 210 and drain region 212 have the same doping concentration and profile.
- the doping concentration profile of the source region 210 and drain region 212when transistor 200 is formed as an asymmetrical transistor, then the doping concentration profile of the source region 210 and drain region 212 may vary in order to any particular electrical characteristics as well known in the art.
- Source region 210 and drain region 212can be collectively referred to as a pair of source/drain regions.
- the portion of semiconductor body 204 located between source region 210 and drain region 212defines the channel region 270 of transistor 200 .
- the channel region 270can also be defined as the area of the semiconductor body 204 surrounded by the gate electrode 208 .
- the source/drain regionmay extend slightly beneath the gate electrode through, for example, diffusion to define a channel region slightly smaller than the gate electrode length (Lg).
- channel region 270is intrinsic or undoped monocrystalline silicon.
- channel region 270is doped monocrystalline silicon. When channel region 270 is doped it is typically doped to a conductivity level of between 1 ⁇ 10 6 to 1 ⁇ 10 9 atoms/cm 3 .
- channel regionwhen the channel region is doped it is typically doped to the opposite conductivity type of the source region 210 and the drain region 212 .
- the channel regionwhen the source and drain regions are n type conductivity the channel region would be doped to p type conductivity.
- the source and drain regionswhen the source and drain regions are p type conductivity the channel region would be n type conductivity.
- Channel region 270can be uniformly doped or can be doped non-uniformly or with differing concentrations to provide particular electrical and performance characteristics.
- channel regions 270can include well-known “halo” regions, if desired.
- the tri-gate transistoris characterized in having three channels and three gates, one gate and channel (G 1 ) which extends between the source and drain regions on side 230 of silicon body 204 , a second gate and channel (G 2 ) which extends between the source and drain regions on the top surface of silicon body 204 , and a third gate and channel (G 3 ) which extends between the source and drain regions on the sidewall of silicon body 204 .
- the gate “width” (Gw) of transistor 200is the sum of the widths of the three channel regions.
- the gate width of transistor 200is equal to the length of sidewall 230 of silicon body 204 , plus the length of top surface 234 of silicon body of 204 , plus the length of sidewall 232 of silicon body 204 .
- Larger “width” transistorscan be obtained by using multiple devices coupled together (e.g., multiple silicon bodies 204 surrounded by a single gate electrode 208 ) as illustrated in FIG. 3A .
- transistor 200can be operated in a fully depleted manner wherein when transistor 200 is turned “on” the channel region 270 fully depletes thereby providing the advantageous electrical characteristics and performance of a fully depleted transistor. That is, when transistor 200 is turned “ON” a depletion region is formed in channel region 270 along with an inversion layer at the surfaces of region 270 (i.e., an inversion layer is formed on the side surfaces and top surface of the semiconductor body).
- the inversion layerhas the same conductivity type as the source and drain regions and forms a conductive channel between the source and drain regions to allow current to flow therebetween.
- the depletion regiondepletes free carriers from beneath the inversion layer.
- the depletion regionextends to the bottom of channel region 270 , thus the transistor can be said to be a “fully depleted” transistor.
- the lower portion 222 of the semiconductor body 204has been thinned relative to the upper portion so that the gate electrode can better control the lower portion of the semiconductor body. By thinning the lower portion, the two sidewall gates G 1 and G 3 can more easily deplete free carriers from beneath the inversion layer formed on the sidewalls of the lower portion of the semiconductor body 204 .
- the two gates G 1 and G 3 from the sidewallcan control the channel region in a manner similar to the way the three gates G 1 , G 2 and G 3 control the channel in the upper portion 224 of the semiconductor body 204 .
- Thinning the bottom part of the body or finnot only decreases the thickness of a semiconductor between the two gates, but also decreases the width of that part of the body which is in contact with the buried oxide. These effects combined decrease the short channel effects in the tri-gate device having a thinned lower body portion.
- Transistor 200 of the present inventioncan be said to be an nonplanar transistor because the inversion layer of channel 270 is formed in both the horizontal and vertical directions in semiconductor body 204 .
- the semiconductor device of the present inventioncan also be considered to be a nonplanar device because the electric field from gate electrode 208 is applied from both horizontal (G 2 ) and vertical sides (G 1 and G 3 ).
- transistor 200can include additional or multiple semiconductor bodies or fins 204 as illustrated in FIG. 3A .
- Each semiconductor body or fin 204has a gate dielectric layer 206 formed on its top surface and sidewalls as shown in FIG. 3A .
- Gate electrode 208is formed on and adjacent to each gate dielectric layer 206 on each semiconductor body 204 .
- Each semiconductor body 204includes a source region 210 and drain region 212 formed in the semiconductor body 204 on opposite sides of gate electrode 208 as shown in FIG. 3A .
- each semiconductor body 208is formed with same width and height (thickness) as other semiconductor bodies 204 .
- each source region 210 and drain region 212 of the semiconductor bodies 204are electrically coupled together by semiconductor material used to form semiconductor body 204 to form a source landing pad 310 and a drain landing pad 312 as shown in FIG. 3A .
- the source regions 210 and drain regions 212can be coupled together by higher levels of metallization (e.g., metal 1 , metal 2 , metal 3 ) used to electrically interconnect various transistors 200 together in the functional circuits.
- the gate width of transistor 200 as shown in FIG. 3Awould be equal to the sum of the gate width created by each of the semiconductor bodies 204 . In this way, a nonplanar or tri-gate transistor 200 can be formed with any gate width desired.
- each of the semiconductor bodies 204include a bottom portion 222 which is thinner than the top portion 224 as described above.
- the source 210 and drain 212can include a silicon or other semiconductor film 350 formed on and around semiconductor body 204 as shown in FIG. 3B .
- semiconductor film 350can be a silicon film or silicon alloy, such as silicon germanium (Si x Ge y ).
- the semiconductor film 350is a single crystalline silicon film formed of the same conductivity type as a source region 210 and drain region 212 .
- the semiconductor filmcan be a silicon alloy, such as silicon germanium where silicon comprises approximately 1-99 atomic percent of the alloy.
- the semiconductor film 350need not necessarily be a single crystalline semiconductor film and in embodiment can be a polycrystalline film.
- semiconductor film 350is formed on the source region 210 and the drain region 212 of semiconductor body 204 to form “raised” source and drain regions.
- Semiconductor film 350can be electrically isolated from a gate electrode 208 by a pair of dielectric sidewalls spacers 360 , such as silicon nitride or silicon oxide or composites thereof.
- Sidewall spacers 360run along laterally opposite sidewalls 260 and 262 of gate electrode 208 as shown in FIG. 3B thereby isolating the semiconductor film 350 from the gate electrode 208 .
- sidewall spacer 360have a thickness of between 20-200 ⁇ .
- the thickness of the source and drain regionsis increased thereby reducing the source/drain contact resistance to transistor 200 improving its electrical characteristics and performance.
- a silicide film 370such as but not limited to titanium silicide, nickel silicide, cobalt silicide is formed on the source region 210 and drain region 212 .
- silicide 370is formed on silicon film 350 on semiconductor body 204 as shown in FIG. 3B .
- Silicide film 370can be formed directly onto silicon body 204 , if desired.
- Dielectric spacers 360enables silicide 370 to be formed on semiconductor body 204 or silicon film 250 in a self-aligned process (i.e., a salicide process).
- FIGS. 4A-4Hillustrate a method of forming a nonplanar transistor having a thinned lower body portion.
- the fabrication of the transistorbegins with substrate 402 .
- a silicon or semiconductor film 408is formed on substrate 402 as shown in FIG. 4A .
- the substrate 402is an insulating substrate, such as shown in FIG. 4A .
- insulating substrate 402includes a lower monocrystalline silicon substrate 404 and a top insulating layer 406 , such as a silicon dioxide film or silicon nitride film.
- Insulating layer 406isolates semiconductor film 408 from substrate 404 , and in embodiment is formed to a thickness between 200-2000 ⁇ . Insulating layer 406 is sometimes referred to as a “buried oxide” layer.
- SOIsilicon or semiconductor on insulating
- semiconductor film 408is ideally a silicon film, in other embodiments it can be other types of semiconductor films, such as but not limited to germanium (Ge), a silicon germanium alloy (Si x Ge y ), gallium arsenide (GaAs), InSb, GaP and GaSb.
- semiconductor film 408is an intrinsic (i.e., undoped) silicon film.
- semiconductor film 408is doped to a p type or n type conductivity with a concentration level between 1 ⁇ 10 16 -1 ⁇ 10 19 atoms/cm 3 .
- Semiconductor film 408can be insitu doped (i.e., doped while it is deposited) or doped after it is formed on substrate 402 by for example ion-implantation. Doping after formation enables both PMOS and NMOS tri-gate devices to be fabricated easily on the same insulating substrate. The doping level of the semiconductor body at this point can be used to set the doping level of the channel region of the device.
- Semiconductor film 408is formed to a thickness which is approximately equal to the height desired for the subsequently formed semiconductor body or bodies of the fabricated tri-gate transistor. In an embodiment of the present invention, semiconductor film 408 has a thickness or height 409 of less than 30 nanometers and ideally less than 20 nanometers. In an embodiment of the present invention, semiconductor film 408 is formed to the thickness approximately equal to the gate “length” desired of the fabricated tri-gate transistor. In an embodiment of the present invention, semiconductor film 408 is formed thicker than desired gate length of the device. In an embodiment of the present invention, semiconductor film 480 is formed to a thickness which will enable the fabricated tri-gate transistor to be operated in a fully depleted manner for its designed gate length (Lg).
- Lggate length
- isolation regionscan be formed into SOI substrate in order to isolate the various transistors to be formed therein from one another. Isolation regions can be formed by etching away portions of the substrate film 408 surrounding a tri-gate transistor, by for example well-known photolithographic and etching techniques, and then back filling the etched regions with an insulating film, such as SiO 2 .
- a hard mask material 410 formed on semiconductor film 408 as shown in FIG. 4Ais a material which can provide a hard mask for the etching of the semiconductor film 408 .
- a hard mask materialis a material which can retain its profile during etching of the semiconductor film 408 .
- a hard mask material 410is a material which will not etch or only slightly etch during the etching of semiconductor film 408 .
- the hard mask materialis formed of a material such that the etchant used to etch the semiconductor film 408 will etch thin film 408 at least five times faster than the hard mask material and ideally at least ten times faster.
- Photoresist mask 412is formed on hard mask layer 410 .
- Photoresist mask 412contains a feature pattern to be transferred into the semiconductor film 408 .
- the photoresist mask 412can be formed by any well known techniques, such as by blanket depositing a photoresist material by masking, exposing and developing the photoresist film into a photoresist mask 412 having a desired pattern for the semiconductor film 408 to be patterned.
- Photoresist mask 412is typically formed of an organic compound.
- the hard mask etchantetches the hard mask material at least one hundred times faster than the underlying semiconductor film 208 (i.e., an etchant has a hard mask to semiconductor film selectivity of at least 50:1).
- an etchanthas a hard mask to semiconductor film selectivity of at least 50:1.
- the hard mask material 414is a silicon nitride or silicon oxynitride film
- hard mask material 410can be etched into a hard mask 414 utilizing a dry etch process, such as a reactive ion etching/ecr plasma etching.
- photoresist mask 412can be removed by well known techniques. For example, photoresist mask 412 can be removed utilizing a “piranha” clean solution which includes sulfuric acid and hydrogen peroxide. Additionally, residue from photoresist mask 412 can be removed with an O 2 ashing.
- photoresist mask 412it is desirable to remove photoresist mask 412 prior to etching semiconductor film 408 so that a polymer film from the photoresist does not form on the sidewalls of the patterned semiconductor film 408 . It is desirable to first remove the photoresist mask 412 prior to etching of the semiconductor film 408 because dry etching processes can erode the photoresist mask and cause a polymer film to develop on the sidewalls of the semiconductor body which can be hard to remove and which can detrimentally device performance. By first removing the photoresist film 412 prior to patterning the semiconductor thin film 408 , the semiconductor thin film 408 can be patterned and pristine sidewalls maintained.
- semiconductor film 408is etched in alignment with hard mask 414 to form a semiconductor body 416 having a pair of laterally opposite sidewalls 418 and 420 .
- Hard mask 414prevents the underlying portion of semiconductor film 208 from becoming etched during the etching process. The etch is continued until the underlying insulating substrate is reached. In an embodiment of the present invention, the etch “end points” on the buried oxide layer 406 .
- Semiconductor film 208etched with an etchant which etches semiconductor 208 without significantly etching hard mask 414 .
- semiconductor film 408is anisotropically etched so that semiconductor body 416 has nearly vertical sidewalls 418 and 420 formed in alignment with the sidewalls of hard mask 414 thereby providing an almost perfect fidelity with hard mask 414 .
- hard mask 414is a silicon nitride or silicon oxynitride hard mask
- semiconductor film 408is a silicon film
- silicon film 408can be etched utilizing a dry etch process comprising HBr/Ar/O 2 .
- semiconductor body 408is etched utilizing an electron cyclotron residence (ECR) plasma etcher.
- ECRelectron cyclotron residence
- an ECR plasma etcher using a chemistry comprising HBr/O 2 with a pressure between 0.2 to 0.8 pascal and the RF power of approximately 120 wattsis used to etch a silicon thin film 408 into a silicon body 416 .
- Such an etch processproduces a substantially anisotropic etch to provide substantially vertical sidewalls 418 and 420 as shown in FIG. 4D .
- an etchhas a high selectivity (approximately 20:1) to the buried oxide layer 406 so that the buried oxide layer etches very little and can be used as an etch stop and for end point detection.
- the ability to end point detectis important to insure that all of the semiconductor film clears from the buried oxide layer because the thickness 409 of the thin film across the wafer may vary and the etch rate of different width semiconductor bodies may also vary.
- an RF biasof between 100-120 watts is used. The RF bias controls the electron energy in the etch which in turn controls the anisotropic profile of the etch.
- the semiconductor body 416is etched so as the reduce the distance between the sidewalls 418 and 420 in the lower portion of the semiconductor body 416 .
- the etching of a semiconductor body to thin the lower portion of the semiconductor bodycan be referred to as the “profile” etch.
- the profile etchis utilized to inwardly taper or form facets 422 and 424 on the sidewalls 418 and 420 as illustrated in FIG. 4E . It is to be appreciated that in other embodiments of the present invention, the profile etch can thin the lower body portion as illustrated in FIGS. 5A-5D .
- a plasma etch processwhich produces an isotropic etch is utilized to reduce the distance between the sidewalls in lower portion of the semiconductor body as compared to the upper portion of the semiconductor body.
- the same plasma etch equipment and etch chemistryis used during the profile etch as is used during the patterning of the semiconductor film 408 except that the RF bias is decreased so that the vertical directionality of the ions is reduced.
- the profile etchcan be accomplished utilizing an ECR plasma etcher with a chemistry comprising HBr/O2 and a pressure between 0.2 to 0.8 pascal with an RF bias between 50-70 watts.
- the hard mask 414is removed from semiconductor body 416 having a thinned lower body portion.
- a wet chemistrycomprising phosphoric acid and Di water can be used to remove the hard mask.
- the hard mask etchcomprises between 80-90% phosphoric acid (by volume) and Di water heated to a temperature between 150-170° C. and ideally to 160° C. is used.
- Such an etchantwill have an almost perfect selectivity between the silicon nitride hard mask 214 and buried oxide layer 406 .
- semiconductor body 416can be exposed to a wet etchant to clean the body 416 .
- a silicon body 416is exposed to a wet etchant comprising ammonia hydroxide (NH 4 OH) to remove any line edge roughness or pitting which may have developed during the patterning of the silicon body 416 .
- NH 4 OHammonia hydroxide
- a silicon body 416is exposed for a period of time of between 30 seconds to 2 minutes to an etchant comprising between 0.1-1% of ammonia hydroxide by volume at a temperature between 20-30 degrees Celsius in order to provide a semiconductor body 416 with pristine sidewalls 418 and 420 .
- a gate dielectric layer 430is formed on sidewalls 418 and 420 and the top surface of semiconductor body 416 .
- the gate dielectric layercan be a deposited dielectric or a grown dielectric.
- the gate dielectric layer 426is a silicon oxynitride dielectric film grown by a dry/wet oxidation process.
- the silicon oxide filmis grown to a thickness between 5-15 ⁇ .
- the gate dielectric layer 430is a deposited dielectric, such as but not limited to a high dielectric constant film, such as a metal oxide dielectric, such as tantalum pentaoxide (Ta 2 O 5 ), titanium oxide (TiO 2 ), hafnium oxide, zirconium oxide, and aluminum oxide. Additionally, in an embodiment of the present invention, gate dielectric layer 430 can be other high k dielectric films, such as but limited to PZT and BST. Any well known technique can be utilized to deposit a high k dielectric, such as but not limited to chemical vapor deposition, atomic layer deposition and sputtering.
- a high dielectric constant filmsuch as a metal oxide dielectric, such as tantalum pentaoxide (Ta 2 O 5 ), titanium oxide (TiO 2 ), hafnium oxide, zirconium oxide, and aluminum oxide.
- gate dielectric layer 430can be other high k dielectric films, such as but limited to PZT and BST. Any well known
- gate electrode 432is formed on the gate dielectric layer 430 formed on the top surface of semiconductor body 416 and is formed on or adjacent to the gate dielectric layer 430 formed on or adjacent to sidewalls 418 and 420 as shown in FIG. 4G .
- the gate electrode 432has a top surface opposite a bottom surface formed on insulating layer 406 and has a pair of laterally opposite sidewalls 434 and 436 which define the gate length of the device.
- Gate electrode 432can be formed by blanket depositing a suitable gate electrode material over the substrate and then patterning the gate electrode material with well known photolithograph and etching techniques to form a gate electrode 432 from the gate electrode material.
- the gate electrode materialcomprises polycrystalline silicon.
- the gate electrode materialcomprises a polycrystalline silicon germanium alloy.
- the gate electrode materialcan comprise a metal film, such as but not limited to tungsten, tantalum and their nitrides.
- the photolithography process used to find the gate electrode 432utilizes the minimum or smallest dimension lithography process used to fabricate the nonplanar transistor (that is, in an embodiment of the present invention, the gate length (Lg) of the gate electrode 432 has a minimum feature dimension of the transistor defined by photolithography). In an embodiment of the present invention, the gate length is less than or equal to 30 nanometers and ideally less than 20 nanometers.
- the gate dielectric layer and gate electrodeare formed with a “subtractive” process whereby undesired portions are etched away
- the gate electrodecan be formed with a replacement gate process whereby a sacrificial gate electrode is first formed, an interlayer dielectric formed adjacent thereto, the sacrificial gate electrode then removed to form an opening in which the gate electrode is then formed as is well known in the art.
- a source region 440 and a drain region 442are then formed in the semiconductor body 416 on opposite sides of gate electrode 432 .
- the semiconductor bodyare doped to a p type conductivity with a concentration between 1 ⁇ 10 21 to 1 ⁇ 10 21 atoms/cm 3 .
- the semiconductor body 416is doped with n type conductivity to a concentration between 1 ⁇ 10 20 to 1 ⁇ 10 21 atmos/cm 3 to form the source/drain regions.
- the source/drain regionscan be formed by ion implantation.
- the ion implantationoccurs in a vertical direction (i.e., a direction perpendicular to the substrate) as shown in FIG. 4H .
- the gate electrode 432is a polysilicon gate electrode and can be doped during the ion implantation process.
- the gate electrode 432acts as a mask to prevent the ion implantation step from doping the channel region of the nonplanar transistor. Again, the channel region is a portion of the semiconductor body 416 located beneath or surrounded by the gate electrode 432 . If the gate electrode 432 is a metal electrode a dielectric hard mask can be used to block the doping during ion implantation process.
- the source/drain regionsmay also include subregions, such as source/drain extensions and source/drain contact regions.
- the semiconductor body 416would be doped on either side of the gate electrode 432 to form the source/drain extensions and then a pair of sidewall spacers such as illustrated in FIG. 3B would be formed along the sidewalls of the gate electrode and a second doping step utilized to form heavily doped source/drain contact region as is well known in the art.
- additional silicon and/or silicidecan be formed onto the semiconductor bodies 416 to form raised source/drain regions and reduce the contact resistance of the device. This completes the fabrication of a nonplanar device having a semiconductor body with a thinned lower portion to improve device performance.
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Abstract
Description
- 1. Field of the Invention
- The present invention relates to the field of semiconductor devices and more particularly to a nonplanar tri-gate transistor having a thinned lower body portion and method of fabrication.
- 2. Discussion of Related Art
- In order to increase the performance of modern integrated circuits, such as microprocessors, silicon on insulator (SOI) transistors have been proposed. Silicon on insulator (SOI) transistors have an advantage in that they can be operated in a fully depleted manner. Fully depleted transistors have an advantage of ideal subthreshold gradients for optimized ON current/OFF current ratios.
- An example of a proposed SOI transistor which can be operated in a fully depleted manner is a tri-gate
transistor 100, such as illustrated inFIG. 1 .Tri-gate transistor 100 includes asilicon body 104 formed on aninsulating substrate 102 having a buriedoxide layer 103 formed on amonocrystalline silicon substrate 105. A gatedielectric layer 106 is formed on the top and sidewalls of thesilicon body 104 as shown inFIG. 1 . Agate electrode 108 is formed on the gate dielectric layer and surrounds thebody 104 on three sides, essentially providing atransistor 100 having three gate electrodes (G1, G2, G3), one on each of the sidewalls of thesilicon body 104 and one on the top surface of thesilicon body 104. Asource region 110 and adrain region 112 are formed in thesilicon body 104 on opposite sides of thegate electrode 108 as shown inFIG. 1 . - An advantage of the tri-gate
transistor 100 is that it exhibits good short channel effects (SCE). One reason tri-gatetransistor 100 achieves good short channel effects is that the nonplanarity of the device places thegate electrode 108 in such a way as to surround the active channel region. That is, in the tri-gate device, thegate electrode 108 is in contact with three sides of the channel region. Unfortunately, the fourth side, the bottom part of the channel is isolated from the gate electrode by the buriedoxide layer 103 and thus is not under close gate control. FIG. 1 is an illustration of a nonplanar or tri-gate device.FIGS. 2A and 2B illustrate a tri-gate or nonplanar device with a thinned lower body portion in accordance with the present invention.FIG. 3A illustrates a nonplanar device having multiple thinned lower body portions.FIG. 3B is an illustration of a nonplanar device having a thinned lower body portion and including sidewall spacers, source/drain extensions and silicided source/drain regions.FIGS. 4A-4H illustrate a method of forming a nonplanar device with a thinned lower body portion in accordance with an embodiment of the present invention.- The present invention is a novel nonplanar device with a thinned lower body portion and a method of fabrication. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. In other instances, well known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention.
- Embodiments of the present invention include a nonplanar or tri-gate transistor having a semiconductor body which is wrapped around on three sides by a gate dielectric layer and a gate electrode. In embodiments of the present invention, the bottom portion of the semiconductor body is made thinner than the top portion of the semiconductor body. Making the bottom portion of the semiconductor body thinner than the top portion increases the gate control over the bottom portion of the body resulting in better short channel effects. In an embodiment of the present invention, a semiconductor film is etched into a semiconductor body utilizing a dry etching process which utilizes a first process gas chemistry and a first RF bias. After forming the semiconductor body, the lower portion of the body is thinned utilizing the same etch chemistry and equipment but utilizing a lower RF bias in order to inwardly taper or facet the lower body portion.
FIGS. 2A and 2B illustrate a nonplanar or tri-gatedevice 200 having a semiconductor body with a thinned lower body portion.FIG. 2A is an overhead/side view oftransistor 200 whileFIG. 2B is an illustration of a cross-sectional view taken through the gate electrode.Transistor 200 is formed on asubstrate 202 and includes a semiconductor body orfin 204. A gatedielectric layer 206 is formed on thetop surface 234 andsidewalls semiconductor body 204. Agate electrode 208 is formed on the gatedielectric layer 206 and surrounds the semiconductor body or fin on three sides. Asource regions 210 and adrain region 212 are formed in the semiconductor body on opposite sides of thegate electrode 208 as shown inFIG. 2A .- As is readily apparent from
FIGS. 2A and 2B , thesemiconductor body 204 has abottom portion 222 which is thinner than thetop portion 224. That is, the distance between thesidewalls top surface 234 than at thebottom surface 236. In an embodiment of the present invention,sidewalls top portion 224 are substantially vertical and are spaced a uniform distance apart while thesidewalls bottom portion 222, are faceted or inwardly tapered to reduce the distance between thesidewalls sidewalls sidewalls top surface 234. In an embodiment of the present invention, thesidewalls height 238 of the semiconductor body204 (i.e., sidewalls start tapering inwardly at the midpoint between thetop surface 234 and bottom surface236). In an embodiment of the present invention, the distance between thesidewalls top surface 234 is between 20-30 nanometers while the distance between thesidewalls bottom surface 236 is between 10-15 nanometers. In an embodiment of the present invention, thebottom portion 222 of thesemiconductor body 204 is made sufficiently thin so that the gate control of the bottom portion is made similar to the gate control of the top portion. In an embodiment of the present invention, thebottom portion 222 of thesemiconductor body 204 is made sufficiently thin relative to the top portion to improve the short channel effects oftransistor 200. - Additionally, as illustrated in
FIGS. 5A-5D , other semiconductor body profiles or shapes may be utilized to improve the short channel effects (SCE) of the tri-gate ornonplanar transistor 200. For example, as illustrated inFIG. 5A , thesemiconductor body 204 can have a pair ofsidewalls top surface 234 to thebottom surface 236. Additionally, in an embodiment of the present invention, as illustrated inFIG. 5B thesemiconductor body 204 can havesidewalls bottom surface 236 at a point or substantially atpoint 502. In yet another embodiment of the present invention as illustrated inFIG. 5C , thesemiconductor body 204 can have a pair ofsidewalls vertical portion 510 separated by uniform distance, a middle inwardlytapered portion 512 and alower portion 514 of vertical sidewalls separated by a second distance which is less than the distance separating thetop portion sidewalls 510. In yet another embodiment of the present invention, the semiconductor body can have anupper portion 224 where thesidewalls bottom portion 222 where thesidewalls FIGS. 5A-5D , the distance between thesidewalls semiconductor body 204 on the top surface is greater than the distance between the semiconductor body on the bottom surface. In this way, thegate electrode 208 can have better control of the semiconductor body at the bottom surface and thereby improve the short channel effects of the device. - In an embodiment of the present invention, the
tri-gate transistor 200 is formed on an insulatingsubstrate 202 which includes a lowermonocrystalline silicon substrate 250 upon which is formed an insulatinglayer 252, such as a silicon dioxide film. In an embodiment of the present invention, insulatinglayer 252 is a buried oxide layer of an SOI substrate. Thetri-gate transistor 200, however, can be formed on any well known insulating substrate, such as substrates formed from silicon dioxide, nitrides, oxides, and sapphires. Semiconductor body 204 is formed on insulatinglayer 252 of insulatingsubstrate 202.Semiconductor body 204 can be formed on any well known material, such as but not limited to silicon (Si), germanium (Ge), silicon germanium (SixGey), gallium arsenide (GaAs), InSb, GaP and GaSb.Semiconductor body 204 can be formed of any well known material which can be reversely altered from an insulating state to a conductive state by applying external electrical controls.Semiconductor body 204 is ideally a single crystalline film when best electrical performance oftransistor 200 is desired. For example,semiconductor body 204 is a single crystalline film whentransistor 200 is used in higher performance applications, such as high density circuit, such as a microprocessor.Semiconductor body 204, however, can be a polycrystalline film whentransistor 200 is used in applications requiring less stringent performance, such as liquid crystal displays.Insulator 252 isolatesemiconductor body 204 from themonocrystalline silicon substrate 250. In an embodiment of the present invention,semiconductor body 204 is a single crystalline silicon film.Gate dielectric layer 206 is formed on and around three sides ofsemiconductor body 204 as shown inFIGS. 2A and 2B .Gate dielectric layer 206 is formed on or adjacent to sidewall230, on thetop surface 234 ofbody 204 and on or adjacent to sidewall232 ofbody 204 as shown inFIGS. 2A and 2B .Gate dielectric layer 206 can be any well known gate dielectric layer. In an embodiment of the present invention, the gate dielectric layer is a silicon dioxide (SiO2), silicon oxynitride (SiOxNy) or a silicon nitride (Si3N4) dielectric layer. In an embodiment of the present invention, thegate dielectric layer 206 is a silicon oxynitride film formed to a thickness between 5-20 Å. In an embodiment of the present invention,gate dielectric layer 206 is a high k gate dielectric layer, such as a metal oxide dielectric, such as but not limited to tantalum pentaoxide (TaO5), titanium oxide (TiO2) and hafnium oxide (HfO).Gate dielectric layer 206 can be other types of high k dielectric layers, such as but not limited to PZT and BST.Gate electrode 208 is formed on and aroundgate dielectric layer 206 as shown inFIGS. 2A and 2B .Gate electrode 208 is formed on or adjacent togate dielectric layer 206 formed onsidewall 230 ofsemiconductor body 204 is formed ongate dielectric layer 206 formed on thetop surface 234 ofsemiconductor body 204 and is formed adjacent to or ongate dielectric layer 206 formed onsidewall 232 ofsemiconductor body 204.Gate electrode 208 has a pair of laterallyopposite sidewalls transistor 200. In an embodiment of the present invention, laterally oppositesidewalls gate electrode 208 run in a direction perpendicular to sidewalls230 and232 ofsemiconductor body 204.Gate electrode 208 can be formed of any suitable gate electrode material. In an embodiment of the present invention,gate electrode 208 comprises a polycrystalline silicon film doped to a concentration density between 1×109atoms/cm3to 1×1020atoms/cm3. In an embodiment of the present invention, the gate electrode can be a metal gate electrode, such as but not limited to tungsten, tantalum, titanium and their nitrides. In an embodiment of the present invention, the gate electrode is formed from a material having a midgap workfunction between 4.5 to 4.8 eV. It is to be appreciated thatgate electrode 208 need not necessarily be a single material and can be a composite stack of thin films, such as but not limited to polycrystalline silicon/metal electrode or metal/polycrystalline silicon electrode.Transistor 200 has asource region 210 and adrain region 212.Source region 210 and drainregion 212 are formed insemiconductor 204 on opposite sides ofgate electrode 208 as shown inFIG. 2A .Source region 210 and drainregion 212 are formed to an n type conductivity type when forming a NMOS transistor and are formed to a p type conductivity when forming a PMOS device. In an embodiment of the present invention,source region 210 and drainregion 212 have a doping concentration between 1×109atoms/cm3to 1×1021atoms/cm3.Source region 210 and drainregion 212 can be formed of the uniform concentration or can include subregions of different concentrations or dopant profiles, such as tip regions (e.g., source/drain extensions) and contact regions. In an embodiment of the present invention, whentransistor 200 is a symmetrical transistor,source region 210 and drainregion 212 have the same doping concentration and profile. In an embodiment of the present invention, whentransistor 200 is formed as an asymmetrical transistor, then the doping concentration profile of thesource region 210 and drainregion 212 may vary in order to any particular electrical characteristics as well known in the art.Source region 210 and drainregion 212 can be collectively referred to as a pair of source/drain regions.- The portion of
semiconductor body 204 located betweensource region 210 and drainregion 212, defines thechannel region 270 oftransistor 200. Thechannel region 270 can also be defined as the area of thesemiconductor body 204 surrounded by thegate electrode 208. At times however, the source/drain region may extend slightly beneath the gate electrode through, for example, diffusion to define a channel region slightly smaller than the gate electrode length (Lg). In an embodiment of the presentinvention channel region 270 is intrinsic or undoped monocrystalline silicon. In an embodiment of the present invention,channel region 270 is doped monocrystalline silicon. Whenchannel region 270 is doped it is typically doped to a conductivity level of between 1×106to 1×109atoms/cm3. In an embodiment of the present invention, when the channel region is doped it is typically doped to the opposite conductivity type of thesource region 210 and thedrain region 212. For example, when the source and drain regions are n type conductivity the channel region would be doped to p type conductivity. Similarly, when the source and drain regions are p type conductivity the channel region would be n type conductivity. In this manner atri-gate transistor 200 can be formed into either a NMOS transistor or a PMOS transistor respectively.Channel region 270 can be uniformly doped or can be doped non-uniformly or with differing concentrations to provide particular electrical and performance characteristics. For example,channel regions 270 can include well-known “halo” regions, if desired. - By providing a gate dielectric and a gate electrode which surrounds the semiconductor body on three sides, the tri-gate transistor is characterized in having three channels and three gates, one gate and channel (G1) which extends between the source and drain regions on
side 230 ofsilicon body 204, a second gate and channel (G2) which extends between the source and drain regions on the top surface ofsilicon body 204, and a third gate and channel (G3) which extends between the source and drain regions on the sidewall ofsilicon body 204. The gate “width” (Gw) oftransistor 200 is the sum of the widths of the three channel regions. That is, the gate width oftransistor 200 is equal to the length ofsidewall 230 ofsilicon body 204, plus the length oftop surface 234 of silicon body of204, plus the length ofsidewall 232 ofsilicon body 204. Larger “width” transistors can be obtained by using multiple devices coupled together (e.g.,multiple silicon bodies 204 surrounded by a single gate electrode208) as illustrated inFIG. 3A . - Because the
channel region 270 is surrounded on three sides bygate electrode 208 andgate dielectric 206,transistor 200 can be operated in a fully depleted manner wherein whentransistor 200 is turned “on” thechannel region 270 fully depletes thereby providing the advantageous electrical characteristics and performance of a fully depleted transistor. That is, whentransistor 200 is turned “ON” a depletion region is formed inchannel region 270 along with an inversion layer at the surfaces of region270 (i.e., an inversion layer is formed on the side surfaces and top surface of the semiconductor body). The inversion layer has the same conductivity type as the source and drain regions and forms a conductive channel between the source and drain regions to allow current to flow therebetween. The depletion region depletes free carriers from beneath the inversion layer. The depletion region extends to the bottom ofchannel region 270, thus the transistor can be said to be a “fully depleted” transistor. In embodiments of the present invention, thelower portion 222 of thesemiconductor body 204 has been thinned relative to the upper portion so that the gate electrode can better control the lower portion of the semiconductor body. By thinning the lower portion, the two sidewall gates G1and G3can more easily deplete free carriers from beneath the inversion layer formed on the sidewalls of the lower portion of thesemiconductor body 204. By thinning thelower portion 222 ofsemiconductor body 204, the two gates G1and G3from the sidewall can control the channel region in a manner similar to the way the three gates G1, G2and G3control the channel in theupper portion 224 of thesemiconductor body 204. Thinning the bottom part of the body or fin not only decreases the thickness of a semiconductor between the two gates, but also decreases the width of that part of the body which is in contact with the buried oxide. These effects combined decrease the short channel effects in the tri-gate device having a thinned lower body portion. Transistor 200 of the present invention, can be said to be an nonplanar transistor because the inversion layer ofchannel 270 is formed in both the horizontal and vertical directions insemiconductor body 204. The semiconductor device of the present invention, can also be considered to be a nonplanar device because the electric field fromgate electrode 208 is applied from both horizontal (G2) and vertical sides (G1and G3).- As stated above the gate width of
transistor 200 is equal to the sum of the three gate widths created fromsemiconductor body 204 oftransistor 200. In order to fabricate transistors with larger gate widths,transistor 200 can include additional or multiple semiconductor bodies orfins 204 as illustrated inFIG. 3A . Each semiconductor body orfin 204 has agate dielectric layer 206 formed on its top surface and sidewalls as shown inFIG. 3A .Gate electrode 208 is formed on and adjacent to eachgate dielectric layer 206 on eachsemiconductor body 204. Eachsemiconductor body 204 includes asource region 210 and drainregion 212 formed in thesemiconductor body 204 on opposite sides ofgate electrode 208 as shown inFIG. 3A . In an embodiment of the present invention, eachsemiconductor body 208 is formed with same width and height (thickness) asother semiconductor bodies 204. In an embodiment of the present invention, eachsource region 210 and drainregion 212 of thesemiconductor bodies 204 are electrically coupled together by semiconductor material used to formsemiconductor body 204 to form asource landing pad 310 and adrain landing pad 312 as shown inFIG. 3A . Alternatively, thesource regions 210 anddrain regions 212 can be coupled together by higher levels of metallization (e.g., metal1, metal2, metal3) used to electrically interconnectvarious transistors 200 together in the functional circuits. The gate width oftransistor 200 as shown inFIG. 3A would be equal to the sum of the gate width created by each of thesemiconductor bodies 204. In this way, a nonplanar ortri-gate transistor 200 can be formed with any gate width desired. In an embodiment of the present invention, each of thesemiconductor bodies 204 include abottom portion 222 which is thinner than thetop portion 224 as described above. - In an embodiment of the present invention, the
source 210 and drain212 can include a silicon orother semiconductor film 350 formed on and aroundsemiconductor body 204 as shown inFIG. 3B . For example,semiconductor film 350 can be a silicon film or silicon alloy, such as silicon germanium (SixGey). In an embodiment of the present invention, thesemiconductor film 350 is a single crystalline silicon film formed of the same conductivity type as asource region 210 and drainregion 212. In an embodiment of the present invention, the semiconductor film can be a silicon alloy, such as silicon germanium where silicon comprises approximately 1-99 atomic percent of the alloy. Thesemiconductor film 350 need not necessarily be a single crystalline semiconductor film and in embodiment can be a polycrystalline film. In an embodiment of the present invention,semiconductor film 350 is formed on thesource region 210 and thedrain region 212 ofsemiconductor body 204 to form “raised” source and drain regions.Semiconductor film 350 can be electrically isolated from agate electrode 208 by a pair ofdielectric sidewalls spacers 360, such as silicon nitride or silicon oxide or composites thereof.Sidewall spacers 360 run along laterally oppositesidewalls gate electrode 208 as shown inFIG. 3B thereby isolating thesemiconductor film 350 from thegate electrode 208. In an embodiment of the present invention,sidewall spacer 360 have a thickness of between 20-200 Å. By adding a silicon or semiconductor film of the source and drainregions transistor 200 improving its electrical characteristics and performance. - In an embodiment of the present invention, a
silicide film 370, such as but not limited to titanium silicide, nickel silicide, cobalt silicide is formed on thesource region 210 and drainregion 212. In an embodiment of the present invention,silicide 370 is formed onsilicon film 350 onsemiconductor body 204 as shown inFIG. 3B .Silicide film 370, however, can be formed directly ontosilicon body 204, if desired.Dielectric spacers 360 enablessilicide 370 to be formed onsemiconductor body 204 orsilicon film 250 in a self-aligned process (i.e., a salicide process). - In an embodiment of the present invention, if desired, the
silicon film 350 and/or thesilicide film 370 can also be formed on the top ofgate electrode 208 whengate electrode 208 is a silicon or silicon germanium film. The formation ofsilicon film 350 andsilicide film 370 on thegate electrode 208 reduces the contact resistance of the gate electrode thereby improving the electrical performance oftransistor 200. FIGS. 4A-4H illustrate a method of forming a nonplanar transistor having a thinned lower body portion. The fabrication of the transistor begins withsubstrate 402. A silicon orsemiconductor film 408 is formed onsubstrate 402 as shown inFIG. 4A . In an embodiment of the present invention, thesubstrate 402 is an insulating substrate, such as shown inFIG. 4A . In an embodiment of the present invention, insulatingsubstrate 402 includes a lowermonocrystalline silicon substrate 404 and a top insulatinglayer 406, such as a silicon dioxide film or silicon nitride film. Insulatinglayer 406 isolatessemiconductor film 408 fromsubstrate 404, and in embodiment is formed to a thickness between 200-2000 Å. Insulatinglayer 406 is sometimes referred to as a “buried oxide” layer. When a silicon orsemiconductor film 408 is formed on an insulatingsubstrate 402, a silicon or semiconductor on insulating (SOI) substrate is created.- Although
semiconductor film 408 is ideally a silicon film, in other embodiments it can be other types of semiconductor films, such as but not limited to germanium (Ge), a silicon germanium alloy (SixGey), gallium arsenide (GaAs), InSb, GaP and GaSb. In an embodiment of the present invention,semiconductor film 408 is an intrinsic (i.e., undoped) silicon film. In other embodiments,semiconductor film 408 is doped to a p type or n type conductivity with a concentration level between 1×1016-1×1019atoms/cm3.Semiconductor film 408 can be insitu doped (i.e., doped while it is deposited) or doped after it is formed onsubstrate 402 by for example ion-implantation. Doping after formation enables both PMOS and NMOS tri-gate devices to be fabricated easily on the same insulating substrate. The doping level of the semiconductor body at this point can be used to set the doping level of the channel region of the device. Semiconductor film 408 is formed to a thickness which is approximately equal to the height desired for the subsequently formed semiconductor body or bodies of the fabricated tri-gate transistor. In an embodiment of the present invention,semiconductor film 408 has a thickness orheight 409 of less than 30 nanometers and ideally less than 20 nanometers. In an embodiment of the present invention,semiconductor film 408 is formed to the thickness approximately equal to the gate “length” desired of the fabricated tri-gate transistor. In an embodiment of the present invention,semiconductor film 408 is formed thicker than desired gate length of the device. In an embodiment of the present invention, semiconductor film480 is formed to a thickness which will enable the fabricated tri-gate transistor to be operated in a fully depleted manner for its designed gate length (Lg).Semiconductor film 408 can be formed on insulatingsubstrate 402 in any well-known method. In one method of forming a silicon on insulator substrate, known as the SIMOX technique, oxygen atoms are implanted at a high dose into a single crystalline silicon substrate and then anneal to form the buriedoxide 406 within the substrate. The portion of the single crystalline silicon substrate above the buried oxide becomes thesilicon film 408. Another technique currently used to form SOI substrates is an epitaxial silicon film transfer technique which is generally referred to as bonded SOI. In this technique a first silicon wafer has a thin oxide grown on its surface that will later serve as the buriedoxide 406 in the SOI structure. Next, a high dose hydrogen implant is made into the first silicon wafer to form a high stress region below the silicon surface of the first wafer. This first wafer is then flipped over and bonded to the surface of a second silicon wafer. The first wafer is then cleaved along the high stress plain created by the hydrogen implant. This results in a SOI structure with a thin silicon layer on top, the buried oxide underneath all on top of the single crystalline silicon substrate. Well-known smoothing techniques, such as HCl smoothing or chemical mechanical polishing (CMP) can be used to smooth the top surface ofsemiconductor film 408 to its desired thickness.- At this time, if desired, isolation regions (not shown) can be formed into SOI substrate in order to isolate the various transistors to be formed therein from one another. Isolation regions can be formed by etching away portions of the
substrate film 408 surrounding a tri-gate transistor, by for example well-known photolithographic and etching techniques, and then back filling the etched regions with an insulating film, such as SiO2. - In an embodiment of the present invention, a
hard mask material 410 formed onsemiconductor film 408 as shown inFIG. 4A .Hard mask material 410 is a material which can provide a hard mask for the etching of thesemiconductor film 408. A hard mask material is a material which can retain its profile during etching of thesemiconductor film 408. Ahard mask material 410 is a material which will not etch or only slightly etch during the etching ofsemiconductor film 408. In an embodiment of the present invention, the hard mask material is formed of a material such that the etchant used to etch thesemiconductor film 408 will etchthin film 408 at least five times faster than the hard mask material and ideally at least ten times faster. In an embodiment of the present invention, whensemiconductor film 408 is a silicon film, thehard mask material 410 can be a silicon nitride or silicon oxynitride film.Hard mask material 410 is formed to a thickness sufficient to retain its profile during the entire etch ofsemiconductor film 408 but not too thick to cause difficulty in its patterning. In an embodiment of the present invention, thehard mask material 410 is formed to a thickness between 3 nanometers to 20 nanometers and ideally to a thickness less than 10 nanometers. - Next, as also shown in
FIG. 4A , aphotoresist mask 412 is formed onhard mask layer 410.Photoresist mask 412 contains a feature pattern to be transferred into thesemiconductor film 408. Thephotoresist mask 412 can be formed by any well known techniques, such as by blanket depositing a photoresist material by masking, exposing and developing the photoresist film into aphotoresist mask 412 having a desired pattern for thesemiconductor film 408 to be patterned.Photoresist mask 412 is typically formed of an organic compound.Photoresist mask 412 is formed to a thickness sufficient to retain its profile while patterning thehard mask film 410 but yet is not formed to thick to prevent lithographic patterning into the smallest dimensions (i.e., critical dimensions) possible with photolithography system and process used. - Next, as shown in
FIG. 4B , thehard mask material 410 is etched in alignment withphotoresist mask 412 to form ahard mask 414 as shown inFIG. 4B .Photoresist mask 412 prevents the underlying portion ofhard mask material 410 from becoming etched. In an embodiment of the present invention, the hard mask is etched with an etchant which can etch the hard mask material but does not etch theunderlying semiconductor film 208. The hard mask material is etched with an etchant that has almost perfect selectivity to theunderlying semiconductor film 208. That is, in an embodiment of the present invention, the hard mask etchant etches the hard mask material at least one hundred times faster than the underlying semiconductor film208 (i.e., an etchant has a hard mask to semiconductor film selectivity of at least 50:1). When thehard mask material 414 is a silicon nitride or silicon oxynitride film,hard mask material 410 can be etched into ahard mask 414 utilizing a dry etch process, such as a reactive ion etching/ecr plasma etching. In an embodiment of the present invention, a silicon nitride or silicon oxynitride hard mask is reactive ion etched utilizing chemistry comprising CHF3and O2and Ar/CH2F2and C4F8and Ar and O2. - Next, as shown in
FIG. 4C , afterhard mask film 410 has been patterned into ahard mask 414,photoresist mask 412 can be removed by well known techniques. For example,photoresist mask 412 can be removed utilizing a “piranha” clean solution which includes sulfuric acid and hydrogen peroxide. Additionally, residue fromphotoresist mask 412 can be removed with an O2ashing. - Although not required, it is desirable to remove
photoresist mask 412 prior toetching semiconductor film 408 so that a polymer film from the photoresist does not form on the sidewalls of the patternedsemiconductor film 408. It is desirable to first remove thephotoresist mask 412 prior to etching of thesemiconductor film 408 because dry etching processes can erode the photoresist mask and cause a polymer film to develop on the sidewalls of the semiconductor body which can be hard to remove and which can detrimentally device performance. By first removing thephotoresist film 412 prior to patterning the semiconductorthin film 408, the semiconductorthin film 408 can be patterned and pristine sidewalls maintained. - Next, as shown in
FIG. 4D ,semiconductor film 408 is etched in alignment withhard mask 414 to form asemiconductor body 416 having a pair of laterallyopposite sidewalls Hard mask 414 prevents the underlying portion ofsemiconductor film 208 from becoming etched during the etching process. The etch is continued until the underlying insulating substrate is reached. In an embodiment of the present invention, the etch “end points” on the buriedoxide layer 406.Semiconductor film 208 etched with an etchant which etchessemiconductor 208 without significantly etchinghard mask 414. In an embodiment of the present invention,semiconductor film 408 is anisotropically etched so thatsemiconductor body 416 has nearlyvertical sidewalls hard mask 414 thereby providing an almost perfect fidelity withhard mask 414. Whenhard mask 414 is a silicon nitride or silicon oxynitride hard mask andsemiconductor film 408 is a silicon film,silicon film 408 can be etched utilizing a dry etch process comprising HBr/Ar/O2. - In an embodiment of the present invention,
semiconductor body 408 is etched utilizing an electron cyclotron residence (ECR) plasma etcher. In an embodiment of the present invention, an ECR plasma etcher using a chemistry comprising HBr/O2with a pressure between 0.2 to 0.8 pascal and the RF power of approximately 120 watts is used to etch a siliconthin film 408 into asilicon body 416. Such an etch process produces a substantially anisotropic etch to provide substantiallyvertical sidewalls FIG. 4D . Additionally, such an etch has a high selectivity (approximately 20:1) to the buriedoxide layer 406 so that the buried oxide layer etches very little and can be used as an etch stop and for end point detection. The ability to end point detect is important to insure that all of the semiconductor film clears from the buried oxide layer because thethickness 409 of the thin film across the wafer may vary and the etch rate of different width semiconductor bodies may also vary. In an embodiment of the present invention, an RF bias of between 100-120 watts is used. The RF bias controls the electron energy in the etch which in turn controls the anisotropic profile of the etch. - Next, as shown in
FIG. 4F , thesemiconductor body 416 is etched so as the reduce the distance between thesidewalls semiconductor body 416. The etching of a semiconductor body to thin the lower portion of the semiconductor body can be referred to as the “profile” etch. In an embodiment of the present invention, the profile etch is utilized to inwardly taper or formfacets sidewalls FIG. 4E . It is to be appreciated that in other embodiments of the present invention, the profile etch can thin the lower body portion as illustrated inFIGS. 5A-5D . In an embodiment of the present invention, a plasma etch process which produces an isotropic etch is utilized to reduce the distance between the sidewalls in lower portion of the semiconductor body as compared to the upper portion of the semiconductor body. In an embodiment of the present invention, the same plasma etch equipment and etch chemistry is used during the profile etch as is used during the patterning of thesemiconductor film 408 except that the RF bias is decreased so that the vertical directionality of the ions is reduced. In an embodiment of the present invention, whensemiconductor body 416 is a silicon body, the profile etch can be accomplished utilizing an ECR plasma etcher with a chemistry comprising HBr/O2 and a pressure between 0.2 to 0.8 pascal with an RF bias between 50-70 watts. - Next, as also shown in
FIG. 4F , thehard mask 414 is removed fromsemiconductor body 416 having a thinned lower body portion. In an embodiment of the present invention, whenhard mask 414 is a silicon nitride or silicon oxynitride film, a wet chemistry comprising phosphoric acid and Di water can be used to remove the hard mask. In an embodiment of the present invention, the hard mask etch comprises between 80-90% phosphoric acid (by volume) and Di water heated to a temperature between 150-170° C. and ideally to 160° C. is used. Such an etchant will have an almost perfect selectivity between the silicon nitride hard mask214 and buriedoxide layer 406. - Next, if desired, after removing
hard mask 414 as illustrated inFIG. 4F ,semiconductor body 416 can be exposed to a wet etchant to clean thebody 416. In an embodiment of the present invention, asilicon body 416 is exposed to a wet etchant comprising ammonia hydroxide (NH4OH) to remove any line edge roughness or pitting which may have developed during the patterning of thesilicon body 416. In an embodiment of the present invention, asilicon body 416 is exposed for a period of time of between 30 seconds to 2 minutes to an etchant comprising between 0.1-1% of ammonia hydroxide by volume at a temperature between 20-30 degrees Celsius in order to provide asemiconductor body 416 withpristine sidewalls - Next, as illustrated in
FIG. 4G , agate dielectric layer 430 is formed onsidewalls semiconductor body 416. The gate dielectric layer can be a deposited dielectric or a grown dielectric. In an embodiment of the present invention, the gate dielectric layer426 is a silicon oxynitride dielectric film grown by a dry/wet oxidation process. In an embodiment of the present invention, the silicon oxide film is grown to a thickness between 5-15 Å. In an embodiment of the present invention, thegate dielectric layer 430 is a deposited dielectric, such as but not limited to a high dielectric constant film, such as a metal oxide dielectric, such as tantalum pentaoxide (Ta2O5), titanium oxide (TiO2), hafnium oxide, zirconium oxide, and aluminum oxide. Additionally, in an embodiment of the present invention,gate dielectric layer 430 can be other high k dielectric films, such as but limited to PZT and BST. Any well known technique can be utilized to deposit a high k dielectric, such as but not limited to chemical vapor deposition, atomic layer deposition and sputtering. - Next,
gate electrode 432 is formed on thegate dielectric layer 430 formed on the top surface ofsemiconductor body 416 and is formed on or adjacent to thegate dielectric layer 430 formed on or adjacent to sidewalls418 and420 as shown inFIG. 4G . Thegate electrode 432 has a top surface opposite a bottom surface formed on insulatinglayer 406 and has a pair of laterallyopposite sidewalls 434 and436 which define the gate length of the device.Gate electrode 432 can be formed by blanket depositing a suitable gate electrode material over the substrate and then patterning the gate electrode material with well known photolithograph and etching techniques to form agate electrode 432 from the gate electrode material. In an embodiment of the present invention, the gate electrode material comprises polycrystalline silicon. In another embodiment of the present invention, the gate electrode material comprises a polycrystalline silicon germanium alloy. In yet other embodiments of the present invention, the gate electrode material can comprise a metal film, such as but not limited to tungsten, tantalum and their nitrides. In an embodiment of the present invention, the photolithography process used to find thegate electrode 432 utilizes the minimum or smallest dimension lithography process used to fabricate the nonplanar transistor (that is, in an embodiment of the present invention, the gate length (Lg) of thegate electrode 432 has a minimum feature dimension of the transistor defined by photolithography). In an embodiment of the present invention, the gate length is less than or equal to 30 nanometers and ideally less than 20 nanometers. It is to be appreciated that although the gate dielectric layer and gate electrode, as illustrated inFIGS. 4G and 4H , are formed with a “subtractive” process whereby undesired portions are etched away, the gate electrode can be formed with a replacement gate process whereby a sacrificial gate electrode is first formed, an interlayer dielectric formed adjacent thereto, the sacrificial gate electrode then removed to form an opening in which the gate electrode is then formed as is well known in the art. - Next, as shown in
FIG. 4H , asource region 440 and adrain region 442 are then formed in thesemiconductor body 416 on opposite sides ofgate electrode 432. For a PMOS transistor, the semiconductor body are doped to a p type conductivity with a concentration between 1×1021to 1×1021atoms/cm3. For an NMOS nonplanar transistor, thesemiconductor body 416 is doped with n type conductivity to a concentration between 1×1020to 1×1021atmos/cm3to form the source/drain regions. In an embodiment of the present invention, the source/drain regions can be formed by ion implantation. In an embodiment of the present invention, the ion implantation occurs in a vertical direction (i.e., a direction perpendicular to the substrate) as shown inFIG. 4H . Thegate electrode 432 is a polysilicon gate electrode and can be doped during the ion implantation process. Thegate electrode 432 acts as a mask to prevent the ion implantation step from doping the channel region of the nonplanar transistor. Again, the channel region is a portion of thesemiconductor body 416 located beneath or surrounded by thegate electrode 432. If thegate electrode 432 is a metal electrode a dielectric hard mask can be used to block the doping during ion implantation process. In other embodiments or other methods, such as solid source diffusion may be used to dope the semiconductor body to form the source and drain regions. In embodiments of the present invention, the source/drain regions may also include subregions, such as source/drain extensions and source/drain contact regions. In such a case, thesemiconductor body 416 would be doped on either side of thegate electrode 432 to form the source/drain extensions and then a pair of sidewall spacers such as illustrated inFIG. 3B would be formed along the sidewalls of the gate electrode and a second doping step utilized to form heavily doped source/drain contact region as is well known in the art. Additionally, if desired at this time, additional silicon and/or silicide can be formed onto thesemiconductor bodies 416 to form raised source/drain regions and reduce the contact resistance of the device. This completes the fabrication of a nonplanar device having a semiconductor body with a thinned lower portion to improve device performance.
Claims (25)
1. A semiconductor device comprising:
a semiconductor body formed on an insulating layer of a substrate, said semiconductor body having a top surface opposite a bottom surface formed on said insulating layer and a pair of laterally opposite sidewalls wherein the distance between said laterally opposite sidewalls at said top surface is greater than at said bottom surface;
a gate dielectric layer formed on said top surface of said semiconductor body and on said sidewalls of said semiconductor body;
a gate electrode formed on said gate dielectric layer on said top surface and sidewalls of said semiconductor body; and
a pair of source/drain region formed in said semiconductor body on opposite sides of said gate electrode.
2. The semiconductor device ofclaim 1 wherein said distance between said sidewalls at the bottom surface of said semiconductor body is approximately ½ to ⅔ of the distance between the sidewall on top surface of said semiconductor body.
3. The semiconductor device ofclaim 1 wherein the distance between said sidewalls of said semiconductor body become smaller than at the top surface at approximately the mid portion of said semiconductor body.
4. The semiconductor device ofclaim 1 wherein the distance between said sidewalls is uniform at the top portion of said semiconductor body and becomes increasingly smaller towards the bottom portion of said semiconductor body.
5. The semiconductor device ofclaim 1 wherein the distance between said sidewall at the bottom portion of said semiconductor body is made sufficiently small so as to improve the short channel effects of said transistor.
6. The semiconductor device ofclaim 1 wherein the distance between said laterally opposite sidewalls at said top surface of said semiconductor body is approximately 30-20 nm.
7. The semiconductor device ofclaim 1 wherein the distance between said laterally opposite sidewalls near at said bottom portion of said semiconductor body is approximately 15-10 nm.
8. A semiconductor device comprising:
a semiconductor body formed on an insulating layer of a substrate, said semiconductor body having a top surface opposite a bottom surface formed on said insulating layer, and a pair of laterally opposite sidewalls wherein said laterally opposite sidewalls have a facet such that the bottom portion of said semiconductor body is thinner than the top portion of said semiconductor body;
a gate dielectric layer formed on said top surface said semiconductor body and on said sidewalls of said semiconductor body;
a gate electrode formed on said gate dielectric layer on said sidewalls of said semiconductor body and on said top surface of said semiconductor body; and
a pair of source/drain regions formed in said semiconductor body on opposite sides of said gate electrode.
9. The semiconductor device ofclaim 8 wherein said semiconductor body comprises silicon.
10. The semiconductor device ofclaim 8 wherein the distance between said sidewalls near the bottom surface of said semiconductor body is approximately 50-66% of the distance between said sidewalls at the top of said semiconductor body.
11. A method of forming a device comprising:
forming a semiconductor body on an insulating layer of a substrate, said semiconductor body having a top surface opposite a bottom surface formed on said insulating layer and a pair of laterally opposite sidewalls wherein the distance between said laterally opposite sidewalls is less at the bottom surface of said semiconductor body than at the top surface of said semiconductor body;
forming a gate dielectric layer on said top surface of said semiconductor body and on said sidewalls of said semiconductor body;
forming a gate electrode on said gate dielectric layer on said top surface of said semiconductor body and adjacent to said gate dielectric layer on said sidewalls of said semiconductor body; and
forming a pair of source/drain regions in said semiconductor body on opposite sides of said gate electrode.
12. The method ofclaim 11 wherein the width at the bottom of said semiconductor body is approximately ½ to ⅔ of the width at the top of said semiconductor body.
13. The method ofclaim 11 wherein said distance between said sidewalls is uniform at the top portion of said semiconductor body and becomes increasingly smaller near the bottom portion of said semiconductor body.
14. The method ofclaim 11 wherein the distance between said sidewalls of said semiconductor body at the top surface is between 20-30 nm and wherein the distance between said laterally opposite sidewalls near the bottom is between 10-15 nm.
15. A method of forming a transistor comprising:
providing a substrate having an oxide insulating layer formed thereon and a semiconductor thin film formed on the oxide insulating layer;
etching said semiconductor film to form a semiconductor body having a top surface opposite a bottom surface on said oxide insulating film and a pair laterally opposite sidewalls;
etching said semiconductor body to reduce the distance between laterally opposite sidewalls near the bottom of said semiconductor body relative to the top of said semiconductor body;
forming a gate dielectric layer on the top surface and sidewalls of said semiconductor body;
forming a gate electrode on said gate dielectric layer on the top of said semiconductor body and adjacent to the gate dielectric layer on the sidewalls of said semiconductor body; and
forming a pair of source/drain regions in said semiconductor body on opposite sides of said gate electrode.
16. The method ofclaim 15 wherein said etching of said semiconductor film stops on said oxide insulating layer.
17. The method ofclaim 15 wherein said semiconductor body comprises silicon and wherein said etching of said semiconductor film is a dry etching process which utilizes a chemistry comprising HBr/O2.
18. The method ofclaim 15 wherein the etching of said semiconductor body reduces the distance between the laterally opposite sidewalls near the bottom portion of said semiconductor body without significantly etching the top portion of said semiconductor body.
19. The method ofclaim 18 wherein said semiconductor body is silicon and is etched by a dry etching process utilizing a chemistry comprising HBr/O2.
20. The method ofclaim 18 wherein the power utilized during said etching of said semiconductor body to reduce the thickness of the bottom portion utilizes an RF bias between 50-70 watts.
21. The method ofclaim 18 wherein the etching process utilized to reduce the distance between the sidewalls on the bottom portion of said semiconductor body utilizes a total HBr/O2gas flow between 150-180 mL/min.
22. The method ofclaim 15 further comprising after etching said semiconductor body to reduce the distance between laterally opposite sidewalls of said semiconductor body near the bottom portion, exposing said semiconductor body to a wet chemistry comprising NHyOH.
23. The methodclaim 15 wherein said etching of said semiconductor film to form said body utilizes a first process gas chemistry and a first RF bias and said etching of said semiconductor body to reduce the thickness of said bottom portion utilizes a second process gas and a second RF bias wherein said second RF bias is less than said first RF bias.
24. The method ofclaim 23 wherein said first process gas is the same as said second process gas.
25. The method ofclaim 24 wherein said first and second process gas comprises HBr/Ar/O2.
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| CNB200580033161XACN100481514C (en) | 2004-10-25 | 2005-10-13 | Non-planar device having a thinned lower body portion and method of manufacture |
| DE112005002397.4TDE112005002397B4 (en) | 2004-10-25 | 2005-10-13 | Non-planar semiconductor device with tapered lower body portion and method of manufacture |
| PCT/US2005/037169WO2006047116A1 (en) | 2004-10-25 | 2005-10-13 | Nonplanar device with thinned lower body portion and method of fabrication |
| TW094136197ATWI305053B (en) | 2004-10-25 | 2005-10-17 | Nonplanar device with thinned lower body portion and method of fabrication |
| US11/440,313US7550333B2 (en) | 2004-10-25 | 2006-05-23 | Nonplanar device with thinned lower body portion and method of fabrication |
| US12/954,241US8067818B2 (en) | 2004-10-25 | 2010-11-24 | Nonplanar device with thinned lower body portion and method of fabrication |
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| US15/673,219US10236356B2 (en) | 2004-10-25 | 2017-08-09 | Nonplanar device with thinned lower body portion and method of fabrication |
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Also Published As
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| US9190518B2 (en) | 2015-11-17 |
| TWI305053B (en) | 2009-01-01 |
| US20170365677A1 (en) | 2017-12-21 |
| WO2006047116A1 (en) | 2006-05-04 |
| US8502351B2 (en) | 2013-08-06 |
| US20140239358A1 (en) | 2014-08-28 |
| US10236356B2 (en) | 2019-03-19 |
| US9741809B2 (en) | 2017-08-22 |
| US20110062512A1 (en) | 2011-03-17 |
| KR20070052337A (en) | 2007-05-21 |
| CN101032032A (en) | 2007-09-05 |
| US20160005829A1 (en) | 2016-01-07 |
| CN100481514C (en) | 2009-04-22 |
| TW200629548A (en) | 2006-08-16 |
| DE112005002397B4 (en) | 2014-03-27 |
| KR100879653B1 (en) | 2009-01-20 |
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| US8749026B2 (en) | 2014-06-10 |
| US20130264642A1 (en) | 2013-10-10 |
| US20060214231A1 (en) | 2006-09-28 |
| US7550333B2 (en) | 2009-06-23 |
| US8067818B2 (en) | 2011-11-29 |
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