US20050269601A1 - Semiconductor device - Google Patents

Abstract

The semiconductor device comprises: a semiconductor substrate (N⁺ substrate110) containing a first conductivity type impurity implanted therein; a second conductivity type impurity-implanted layer (P⁺ implanted layer114) at relatively high concentration, formed on the semiconductor substrate (N⁺ substrate110); a second conductivity type impurity epitaxial layer (P⁻ epitaxial layer111) at relatively low concentration, formed on the second conductivity type impurity-implanted layer (P⁺ implanted layer114); and a field effect transistor100(N-channel type lateral MOSFET100)composed of a pair of impurity diffusion regions (N⁺ source diffusion layer115and N⁻ drain layer116) provided in the second conductivity type impurity epitaxial layer (P⁻ epitaxial layer111) and a gate electrode117provided over a region sandwiched with the pair of impurity diffusion regions (N⁺ source diffusion layer115and N⁻ drain layer116).

Description

• This application is based on Japanese patent application NO. 2004-170536, the content of which is incorporated hereinto by reference.
BACKGROUND OF THE INVENTION
• 1. Field of the Invention
• The present invention relates to a semiconductor device.
• 2. Related Art
• In field effect transistors (FETs) such as a lateral power metal oxide semiconductor field effect transistor (MOSFET) having a source electrode on a back surface (a back surface source), a thickness of an effective epitaxial layer (hereinafter referred to as “effective epitaxial thickness”) is considerably influential on a drain-source breakdown voltage (BVdss) and a drain-source capacitance (Cds), and it is preferable to have thicker effective epitaxial thickness to increase the drain-source breakdown voltage and reduce the drain-source capacitance.
• Further, a diffusion of an impurity into a substrate is often conducted in order to contact the source with the back surface of the substrate, while an unwanted extending of the substrate is occurred by the diffusion of the impurity, thereby reducing the effective epitaxial thickness. The reason for contacting the source with the back surface of the substrate is that, when a wire is coupled thereto from a source electrode on the front surface side of the substrate, a source inductance generated by the wire considerably deteriorates the radio frequency (RF) characteristics, and under such circumstance, a source electrode is provided on the back surface thereof to provide a direct coupling of the back surface of the substrate to a package frame.
• Accordingly, it is critical for inhibiting the extending of the substrate to provide a thicker effective epitaxial thickness, while diffusing an impurity into the substrate to provide a contact between the source and the back surface of the substrate. It is also critical to reduce a resistance of the substrate to the utmost.
• In conventional techniques, which are typically represented by techniques described in Japanese Patent Laid-Open No. 2004-063,922 and Japanese Patent Laid-Open No. 2002-343,960, a field effect transistor (FET) such as an N-channel lateral MOSFET comprises a P⁻epitaxial layer11 on a P⁺ substrate10, as shown in a cross-sectional view ofFIG. 7, and a field effect transistor structure such as MOSFET and the like, which typically includes an N⁺ source diffusion layer15, an N⁻ drain layer16 and a gate electrode17, are formed thereon. Here, the N⁺ source diffusion layer15 is coupled to a P⁺ buriedlayer12athrough asource electrode18. The P⁺ buriedlayer12ais coupled to the P⁺ substrate10 to form a back surface source-grounding structure.
• The P⁺ buriedlayer12afor forming the back surface source-grounding structure can be formed by, as shown in cross-sectional process views ofFIGS. 8A to8D, growing the P⁻epitaxial layer11 on the P⁺ substrate10 (FIGS. 8A and 8B), and thereafter conducting a diffusion or an ion implantation of P⁺ for forming P⁺ buriedlayer12a(FIG. 8C), and then thermally processing thereof for forming a buried structure (FIG. 8D).
SUMMARY OF THE INVENTION
• However, it has now been discovered that the conventional techniques including the techniques disclosed in the above-described literature references still have a room for an improvement in the following point.
• FIG. 7,FIGS. 8A to8D andFIG. 9 include diagrams and a profile diagram for describing field effect transistors such as MOSFET in conventional technique. While boron is typically employed as a P-type impurity for the P⁺ substrate10 and the P⁻epitaxial layer11 inFIG. 7 andFIGS. 8A to8D, boron is a light element and thus has larger diffusion coefficient, and therefore provides larger extending on the substrate caused by the thermal processing of the substrate for the epitaxial growth or by the thermal processing of the substrate for the source diffusion.
• For example, when boron of 10 Ωcm (about 1×10¹⁵cm⁻³) is introduced into a P⁺ substrate containing boron of 0.0075 Ωcm (about 2×10¹⁹cm⁻³) to form a P⁻ epitaxial layer having athickness 10 μm and the formed P⁻ epitaxial layer is then thermally processed, an effective epitaxial thickness is on the order of about 3 μm, in the case of determining the effective epitaxial thickness at 2×10¹⁵cm⁻³as shown inFIG. 9 that presents a boron profile along A-A′ direction inFIG. 7, due to causing a larger extending on the substrate, as indicated with an arrow inFIG. 9. Therefore, there is a room for an improvement in that it is difficult to increase the drain-source breakdown voltage (BVdss) and decrease the drain-source capacitance (Cds).
• According to the present invention, there is provided a semiconductor device, comprising: a semiconductor substrate containing a first conductivity type impurity implanted in the semiconductor substrate; a second conductivity type impurity-implanted layer at relatively high concentration, formed on the semiconductor substrate; a second conductivity type impurity epitaxial layer at relatively low concentration, formed on the second conductivity type impurity-implanted layer; and a field effect transistor composed of a pair of impurity diffusion regions provided in the second conductivity type impurity epitaxial layer and a gate electrode provided over a region sandwiched with the pair of impurity diffusion regions.
• According to the present invention, since the first conductivity type impurity contained in the semiconductor substrate and the second conductivity type impurity contained in the second conductivity type impurity-implanted layer attract each other by coulomb force, an extending of the semiconductor substrate can be prevented. Accordingly, an increase of the film thickness for the effective epitaxial thickness can be achieved, and thus a semiconductor device comprising a field effect transistor having larger drain-source breakdown voltage and smaller drain-source capacitance can be achieved.
• The semiconductor device according to the present invention may further comprise a second conductivity type impurity source buried layer that contacts with the semiconductor substrate and with the second conductivity type impurity-implanted layer.
• The semiconductor devices according to the present invention may further have a configuration, in which the first conductivity type impurity may include As or Sb. Resistance of the semiconductor substrate can be reduced by implanting As or Sb, which has comparatively smaller resistivity, as the first conductivity type impurity into the semiconductor substrate. Accordingly, the semiconductor device comprising the field effect transistor having the back surface source-grounding structure comprising the semiconductor substrate having lower resistance can be achieved. In addition, the extending of the semiconductor substrate can be further inhibited by forming the second conductivity type impurity-implanted layer on the semiconductor substrate implanted with As or Sb having comparatively smaller diffusion coefficient. Therefore, further increase in the film thickness for the effective epitaxial thickness can be achieved. As a result, the semiconductor device comprising the field effect transistor having higher drain-source breakdown voltage and lower drain-source capacitance can be achieved.
• According to the present invention, the semiconductor device comprising the field effect transistor having high drain-source breakdown voltage and low drain-source capacitance is presented.
BRIEF DESCRIPTION OF THE DRAWINGS
• The above and other objects, advantages and features of the present invention will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:
• FIG. 1 is a schematic cross-sectional view of a MOSFET of an embodiment according to the present invention;
• FIG. 2 is a plan view of B-B′ face of MOSFET shown inFIG. 1 of the embodiment according to the present invention;
• FIG. 3 is a plan view of D-D′ surface of MOSFET of the embodiment according to the present invention;
• FIGS. 4A to4F are cross-sectional views of a layer structure, schematically showing a manufacturing process for the MOSFET of the embodiment according to the present invention;
• FIGS. 5G to5J are cross-sectional views of a layer structure, schematically showing a manufacturing process for the MOSFET of the embodiment according to the present invention;
• FIG. 6 is a diagram, showing an impurity profile of the MOSFET of the embodiment according to the present invention and an impurity profile of the MOSFET shown inFIG. 7;
• FIG. 7 is a schematic cross-sectional view of a MOSFET of a conventional technique;
• FIGS. 8A to8D are cross-sectional views of a layer structure, schematically showing a manufacturing process for the MOSFET of a conventional technique; and
• FIG. 9 is a diagram, showing an impurity profile of the MOSFET of a conventional technique.
DETAILED DESCRIPTION OF THE INVENTION
• The invention will be now described herein with reference to illustrative embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments illustrated for explanatory purposed.
• Embodiments according to the present invention will be described as follows in further detail, in reference to the annexed figures. In all figures, identical numeral is assigned to an element commonly appeared in the figures, and the detailed description thereof will not be presented.
• While the present embodiment is intended to describe, for example, an N-channel lateral MOSFET employing an N-type impurity as a first conductivity type impurity and employing a P-type impurity as a second conductivity type impurity, similar description can also be made for a P-channel lateral MOSFET, as taking the reversed conductivity types of the impurities.
• The semiconductor device shown inFIG. 1 comprises: a semiconductor substrate (N⁺ substrate110) containing a first conductivity type impurity implanted in the semiconductor substrate; a second conductivity type impurity-implanted layer (P⁺ implanted layer114) at relatively high concentration, formed on the semiconductor substrate (N⁺ substrate110); a second conductivity type impurity epitaxial layer (P⁻ epitaxial layer111) at relatively low concentration, formed on the second conductivity type impurity-implanted layer (P⁺ implanted layer114); and a field effect transistor (N-channel type lateral MOSFET100) composed of a pair of impurity diffusion regions (N⁺source diffusion layer115 and N⁻ drain layer116) provided in the second conductivity type impurity epitaxial layer (P⁻ epitaxial layer111) and agate electrode117 provided over a region sandwiched with the pair of impurity diffusion regions (N⁺source diffusion layer115 and N⁻ drain layer116).
• An N-channel typelateral MOSFET100 according to the present embodiment is shown inFIG. 1.
• The N-channel typelateral MOSFET100 comprises asource electrode118, agate electrode117 and adrain electrode119. The N-channel typelateral MOSFET100 comprises an N⁺ substrate110, which is a silicon substrate doped with an N-type impurity such as As, Sb, phosphorus and the like as a first conductivity type impurity, a P⁺ implantedlayer114, which is a second conductivity type impurity-implanted layer at relatively high concentration, formed on the N⁺ substrate110 and containing a P-type impurity such as boron, Al and the like implanted therein, a P⁻epitaxial layer111, which is a second conductivity type epitaxial layer at relatively low concentration, formed on the P⁺ implantedlayer114 and containing a P-type impurity such as boron, Al and the like ion-implanted therein, a P⁺ source buriedlayer112a, which is a second conductivity type impurity source buried layer, formed on the N⁺ substrate110 and containing a P-type impurity such as boron, Al and the like ion-implanted therein, and an N⁺ source buriedlayer112bcontaining an N-type impurity such as As, Sb, phosphor and the like ion-implanted therein.
• In the present embodiment, the N⁺ substrate110 is implanted with, for example, As at a concentration of 2×10¹⁹cm⁻³. In addition, the P⁺ implantedlayer114 is implanted with, for example, boron at a concentration of 1×10¹⁶cm⁻³, the P⁻ epitaxial layer111 is implanted with, for example, boron at a concentration of 1×10¹⁵cm⁻³, and the concentration of impurity in the P⁺ implantedlayer114 is relatively higher than the concentration in the P⁻ epitaxial layer111. Further, the P⁺ source buriedlayer112ais implanted with, for example, boron at a concentration of 1×10¹⁹cm⁻³.
• In addition, an N⁻ drain layer116, which is a drain diffusion layer ion-implanted with an N-type impurity such as As, Sb, phosphorus and the like, a P⁺ base layer136 ion-implanted with a P-type impurity such as boron, Al and the like, and an N⁺ contact138 ion-implanted with an N-type impurity such as As, Sb, phosphorus and the like and coupled to thedrain electrode119 are formed in the P⁻ epitaxial layer111, and agate electrode117 is coupled to the P⁺ base layer136 through agate insulating film130. The circumference (top surface and side surface) of thegate electrode117 except the portion of thegate electrode terminal144 is covered with an insulatingfilm132. Moreover, aninterlayer film134 and apolysilicon electrode120, which functions as inhibiting the electric field intensification to thegate electrode117 and fixing the source reference potential, are formed on the insulatingfilm132. Thedrain electrode119 comprises adrain electrode terminal146 on the upper portion thereof.
• In addition, a N⁺source diffusion layer115, which is ion-implanted with a N-type impurity such as As, Sb, phosphorus and the like, is formed on the P⁺ source buriedlayer112a, and is coupled to an N⁺ contact140, which is formed in the N⁺ source buriedlayer112band is ion-implanted with an N-type impurity such as As, Sb, phosphorus and the like. The N⁺ contact140 is coupled to thesource electrode118.
• Here, the P⁺ implantedlayer114 is provided for the purpose of preventing a punch-through of the N⁻ drain layer116 and the N⁺ substrate110, and the profile of the impurity is, for example, at a concentration on the order of 1×10¹⁶cm⁻³and the thickness thereof is on the order of 1 μm. Also, since the conductivity type of the impurity implanted into the N⁺ substrate110 is opposite to the conductivity type of the impurity implanted into the P⁺ implantedlayer114, the extending of the N⁺ substrate110 can be inhibited.
• Here, the P⁺ implantedlayer114 is coupled to the P⁺ source buriedlayer112a, and P⁺ source buriedlayer112ais coupled to thesource electrode118 through the N⁺ contact140 (the region where N-type impurity is implanted), by having a layout shown inFIG. 2, which is a plan view of a plane B-B′ ofFIG. 1, viewed from the upper direction.
• In addition, as shown inFIG. 3, which is a plan view of a plane D-D′ that is a contact portion shown inFIG. 1 viewed from the upper direction, the P⁺ source buriedlayer112ais coupled to thesource electrode118 by disposing a P⁺ contact148 in a region of the P⁺ source buriedlayer112aexcept the region of the N⁺source diffusion layer115. Thesource electrode118 is coupled to the N⁺ source buriedlayer112bthrough the N⁺ contact140. In addition, since the N⁺ source buriedlayer112bis coupled to a back surface source electrode141 (another source electrode), which is provided so as to cover the entire back surface of the N⁺ substrate110 and comprises a backsurface source terminal142 in the lower portion thereof, the P⁺ source buriedlayer112ais eventually grounded (coupled) to the backsurface source electrode141.
• Therefore, since a source-grounding (source-coupling) is formed with the same P-type impurity on the back surface of the N⁺ substrate110, as can be seen upon viewing the N⁺ substrate110 from the side of the N-channel type lateral MOSFET, it works as a N-channel type lateral MOSFET.
• A process for manufacturing the N-channeltype lateral MOSFET100 will be described as follows.
• FIGS. 4A to4F andFIGS. 5G to5J are cross-sectional views illustrating the process for manufacturing the N-channeltype lateral MOSFET100.
• The P⁺ implantedlayer114 is formed by ion-implanting a P-type impurity such as boron and the like, or ion-diffusing a P-type impurity such as boron and the like implanted therein onto the N⁺ substrate110 having an N-type impurity such as As, Sb, phosphorus and the like (FIG. 4A and 4B). Then, a P⁻ epitaxial growth is conducted by employing a P-type impurity ion such as boron and the like to form the P⁻ epitaxial layer111 (FIG. 4C).
• Subsequently, a resist113 is formed on the P⁻ epitaxial layer111, and a P-type impurity such as boron is selectively diffused for the purpose of forming the P⁺ source buriedlayer112aby employing a known lithography technique (FIG. 4D). Alternatively, an ion-implantation with a P-type impurity such as boron and the like may be conducted.
• Next, an N-type impurity such as As, Sb, phosphorus and the like is selectively ion-diffused by using a known lithography technique to form an N⁺ source buriedlayer112b(FIG. 4E). Alternatively, the N-type impurity may be ion-implanted. Then, a thermal processing is carried out for 5 to 6 hours at a temperature on the order of 1,150 degree C. to bury the P-type impurity and the N-type impurity in the P⁺ source buriedlayer112aand the N⁺ source buriedlayer112b(FIG. 4F).
• Then, agate insulating film130 is deposited thereon, and a multi-layered body of polysilicon and tungsten silicon and the like is formed on a portion thereof to provide a gate electrode117 (FIG. 5G). Subsequently, a resistfilm113 is formed thereon, and the formed resistfilm113 is selectively stripped by employing a known lithography technique, and thereafter, a P-type impurity such as boron and the like is implanted into thegate electrode117 and the P⁺ base layer136, and subsequently, an N-type impurity such as As, Sb, phosphorus and the like is implanted into a source region (FIG. 5H). Then, an insulatingfilm132 for protecting thegate electrode117 is formed, and apolysilicon electrode120 and aninterlayer film134 are formed thereon, and after that, theinterlayer film134 is planarized using a chemical mechanical polishing (CMP) technique (FIG. 5I).
• Then, a resist film (not shown in the drawings) is deposited on theinterlayer film134, and after selectively stripping the resist film (not shown in the drawings) using a known lithography technique, a contact hole is formed using a plasma etching technique and the like. Subsequently, an N-type impurity such as As, Sb, phosphorus and the like is ion-implanted into the bottom of the contact hole to form an N⁺ contact138 and N⁺ contact140. Subsequently, a barrier metal is deposited in the contact hole, and tungsten is grown up thereon, and then, an etch back process is carried out. Then, aluminum or the like is deposited using a sputtering technique, and thereafter, asource electrode118 and adrain electrode119 are formed using a known lithography technique and an etching technique (FIG. 5J). Then, agate electrode terminal144, a backsurface source electrode141, a backsurface source terminal142 and adrain electrode terminal146 are provided to form the N-channel type lateral MOSFET100 (FIG. 1).
• Here, the N-channeltype lateral MOSFET100 is completed by the above-mentioned processes.
• Advantageous effects of the N-channeltype lateral MOSFET100 according to the present embodiment will be described as follows.
• In the present embodiment, the N-type impurity such as As, Sb, phosphorus and the like is introduced into the N⁺ substrate110 to cause an attraction by coulomb force between atoms such as boron, Al and the like contained in the P⁺ implantedlayer114 and atoms such as As, Sb, phosphorus and the like contained in the N⁺ substrate110 at the occasion of conducting the thermal processing for the P⁺ source buriedlayer112aor the like, thereby providing an inhibition of the extending of the N⁺ substrate110. Thus, the effective epitaxial thickness thereof can be increased. Therefore, the N-channeltype lateral MOSFET100 having larger drain-source breakdown voltage (BVdss) and reduced drain-source capacitance (Cds) can be presented.
• In addition, concerning the substrate implanted with boron, which is typically employed in the conventional technique represented by the technique described in Japanese Patent Laid-Open No. 2004-063,922, it is difficult to increase the concentration of the implanted impurity such as boron for the purpose of maintaining the manufacturing stability Therefore, it is difficult to reduce the resistivity of the substrate, and the value of the resistivity is, for example, on the order of 0.005 Ωcm to 0.01 Ωcm. On the contrary, in the N-channeltype lateral MOSFET100, the resistivity of the N⁺ substrate110 can be reduced by implanting As and Sb, which are N-type impurities that is capable of being implanted into the N⁺ substrate110 at relatively higher concentration and has relatively lower resistivity. More specifically, the resistivity of the N⁺ substrate110 can be on the order of 0.001 Ωcm to 0.003 Ωcm, which is a level equal to or less than one third of that of conventional substrate. Therefore, the N-channeltype lateral MOSFET100 having the back surface source-grounding structure and lower substrate resistance can be achieved.
• Further, As and Sb, which have smaller diffusion coefficient as compared with boron that is used for being implanted into the substrate in the conventional technique, is implanted into the N⁺ substrate110 in the present embodiment. For example, when the P⁺ implantedlayer114 and theP epitaxial layer111 containing a P-type impurity such as boron implanted therein at 10 Ωcm (about 1×10¹⁵cm⁻³) are formed to a thickness of 10 μm on the N⁺ substrate110 containing As implanted therein at 0.0015 Ωcm (about 8×10¹⁹cm⁻³), an effective epitaxial thickness thereof is about 5 μm, as shown inFIG. 6, which illustrates a profile along the direction in the line C-C′ of the N-channeltype lateral MOSFET100 ofFIG. 1. Thus, an extending of the N⁺ substrate110 is smaller as shown by an arrow inFIG. 6, as compared with the effective epitaxial thickness of about 3 μm (FIG. 9), which is the effective epitaxial thickness provided by the conventional technique using boron, and therefore an increase in the film thickness of the effective epitaxial thickness by about 2 μm can be achieved. Therefore, the drain-source breakdown voltage can be improved by, for example, about 50V, as compared with the conventional technique, by increasing the film thickness of the effective epitaxial thickness by about 2 μm. The reason is that the drain-source breakdown voltage (BVdss) of the lateral MOSFET strongly depends on the effective epitaxial thickness, and in other words, an electric field intensification is occurred in a PN junction between the N⁻ drain layer116 and the P⁻ epitaxial layer111, thereby resulting in a yielding of the breakdown voltage. Thicker P⁻ epitaxial layer111 provides more relaxation of such electric field intensification, since the depletion layer, which is a region with less amount of conduction electron, tends to be extended in the case of being applied with a voltage. Therefore, in the present embodiment, the N-channeltype lateral MOSFET100 having larger drain-source breakdown voltage (BVdss) can be achieved by being larger effective epitaxial thickness. Further, the drain-source capacitance (Cds) can be reduced by, for example, about 30% as compared with the conventional technique employing boron, by increasing the film thickness of the effective epitaxial thickness by about 2 μm as compared with the film thickness of the effective epitaxial thickness of the conventional technique employing boron. This is because the drain-source capacity is considerably affected by the PN junction capacity between the N⁻ drain layer116 and the P⁻ epitaxial layer111. Thus, thicker P⁻ epitaxial layer111 provides further tendency of extending the depletion layer, which is a region with less amount of conduction electron, in the case of being applied with a voltage. Therefore, since PN junction capacity is reduced, further reduction of the drain-source capacitance (Cds) can be presented. As a result, the N-channeltype lateral MOSFET100 having further reduced drain-source capacitance (Cds) can be achieved.
• While the embodiments of the present invention have been described above in reference to the annexed figures, it should be understood that the descriptions above are presented for the purpose of illustrating the present invention, and various configurations other than the above-described configurations can also be adopted.
• For example, while the configuration for achieving the improvement in the drain-source breakdown voltage (BVdss) and the reduction of the drain-source capacitance (Cds) by employing the N-type impurity as the first conductivity type impurity and by employing the P-type impurity as the second conductivity type impurity has been described in the above-described embodiments, the P-type impurity may be employed as the first conductivity type impurity and the N-type impurity may be employed as the second conductivity type impurity. More specifically, the N-channeltype lateral MOSFET100 having increased drain-source breakdown voltage (BVdss) and reduced drain-source capacitance (Cds) presented by the inhibition of the extending of the N⁺ substrate110 by coulomb force by forming the P⁺ implantedlayer114 on the N⁺ substrate110 has been described in the above-described embodiments. Alternatively, an N⁺ implanted layer containing an N-type impurity such as phosphorus, As, Sb and the like implanted therein may be formed on a P⁺ substrate containing boron, Al and the like implanted therein. Having such configuration, the increase in the effective epitaxial thickness can be achieved by inhibiting the extending of the P⁺ substrate by coulomb force, and thus the P channel type lateral MOSFET having higher drain-source breakdown voltage (BVdss) and reduced drain-source capacitance (Cds) can be achieved.
• Further, while the above-described embodiments describe on the metal oxide semiconductor field effect transistor (MOSFET), other types of the field effect transistor such as a metal insulator semiconductor field effect transistor (MISFET) may also be employed provided that: the first conductivity type impurity is used for the substrate, and an increase in the effective epitaxial thickness is achieved by inhibiting an extending of the substrate by providing a mutual attraction by coulomb force between the first conductivity type impurity contained in the substrate and the second conductivity type impurity contained in the second conductivity type impurity-implanted layer, thereby achieving a field effect transistor having an increased drain-source breakdown voltage (BVdss) and a reduced drain-source capacitance (Cds). Further, another alternative approach is to achieve a field effect transistor having a back surface source-grounding structure comprising the substrate having reduced resistance, by introducing one or two material(s) selected from a group consisting of As and Sb, which have relatively lower resistivity, into the substrate as the first conductivity type impurity to reduce the resistance of the substrate. In addition, further alternative approach is to achieve a field effect transistor having larger drain-source breakdown voltage and smaller drain-source capacitance by forming the second conductivity type impurity-implanted layer on the substrate containing As and Sb implanted therein, which are elements having smaller diffusion coefficient, to further inhibit the extending of the substrate, thereby achieving further increase in the effective epitaxial thickness.
• While the preferred embodiments of the present invention have been described above, it should be understood that the configuration of the present invention is not limited to the above-described embodiments. For example, the present invention may include the following aspects.
• (i) A field effect transistor having a source electrode, a gate electrode and a drain electrode, comprising: a substrate containing a first conductivity type impurity implanted in the substrate; a second conductivity type impurity-implanted layer at relatively higher concentration formed on the substrate; and a second conductivity type impurity epitaxial layer at relatively lower concentration formed on the second conductivity type impurity-implanted layer.
• (ii) In the field effect transistor, further comprising a second conductivity type impurity source buried layer that contacts with the substrate and the second conductivity type impurity-implanted layer.
• (iii) In the field effect transistor, wherein the first conductivity type impurity is one or two material(s) selected from a group consisting of As and Sb.
• It is apparent that the present invention is not limited to the above embodiment, that may be modified and changed without departing from the scope and spirit of the invention.

Claims (7)

1. A semiconductor device, comprising:

a semiconductor substrate containing a first conductivity type impurity implanted in said semiconductor substrate;

a second conductivity type impurity-implanted layer at relatively high concentration, formed on said semiconductor substrate;

a second conductivity type impurity epitaxial layer at relatively low concentration, formed on said second conductivity type impurity-implanted layer; and

a field effect transistor composed of a pair of impurity diffusion regions provided in said second conductivity type impurity epitaxial layer and a gate electrode provided over a region sandwiched with said pair of impurity diffusion regions.

2. The semiconductor device according toclaim 1, further comprising:

a second conductivity type impurity source buried layer that contacts with said semiconductor substrate and with said second conductivity type impurity-implanted layer.

3. The semiconductor device according toclaim 1, wherein said first conductivity type impurity includes As or Sb.

4. The semiconductor device according toclaim 1, wherein an insulating film is provided to cover an upper face and a side face of said gate electrode, and a polysilicon electrode is provided to contact with an upper face of said insulating film.

5. The semiconductor device according toclaim 2, wherein a source electrode is provided on an upper portion of said impurity diffusion region, another source electrode, which is different from said source electrode, is provided on a back surface of said semiconductor substrate, and said second conductivity type impurity source buried layer is coupled to said another source electrode.

6. The semiconductor device according toclaim 5, wherein said another source electrode is provided to cover the entire back surface of said semiconductor substrate.

7. The semiconductor device according toclaim 5, wherein a region implanted with a first conductivity type impurity is provided to contact with a lower surface of said source electrode, and said second conductivity type impurity source buried layer is coupled to said source electrode through said region implanted with a first conductivity type impurity.

Images