It is known to use Peltier coolers for stabilizing the temperature of optoelectronic devices. Peltier coolers exploit the Peltier effect, according to which heat is drawn from or fed to the interface between two different conductors when current flows, depending on the current direction. Usually, two semiconductor materials having a different conduction type are connected to one another with a readily conductive metal bridge that forms the cooled area.
The known Peltier coolers used for stabilizing the temperature of optoelectronic devices are usually incorporated in a comparatively large housing, for example a so-called butterfly housing, on account of their size.
The present invention is based on the object of providing a compact optoelectronic assembly which can be used even in housings of small design. In addition, the intention is to enable an as far as possible temperature-insensitive coupling of an optical waveguide to the assembly.
This object is achieved according to the invention by means of an optoelectronic assembly having the features ofclaim1. Preferred advantageous refinements of the invention are provided in the subclaims.
Accordingly, the solution according to the invention is distinguished by the fact that the cooling element used is a Peltier cooler having a thickness of less than 1 mm, on which the component is arranged either directly or with interposition of a carrier substrate for the optoelectronic or passive optical component.
This results in a very compact construction that makes it possible to integrate the Peltier cooler together with the optoelectronic or passive optical component and also further components, if appropriate, into a hermetically sealed housing of small design. In this case, it is possible to realize very small optoelectronic constructional forms, for example TO constructional forms. In particular, it is possible to realize temperature-stabilized ITU laser sources having a constant wavelength at different ambient temperatures in small constructional forms.
The Peltier cooler is preferably embodied in silicon, silicon carbide, diamond or another material having high thermal conductivity. In this case, the Peltier cooler advantageously has the same or virtually the same coefficient of thermal expansion as the optoelectronic or passive optical component arranged thereon or the carrier substrate, which are usually formed in silicon. Consequently, only very low thermal stresses arise. As a result, it is possible to effect a stable, temperature-insensitive single-mode coupling with an optical waveguide to be coupled.
Moreover, Peltier coolers comprising corresponding materials, in particular silicon-based Peltier coolers, expand to a lesser extent than conventional Peltier coolers, thereby making it possible to keep the position of a radiation source, for instance of a laser, stable with regard to a fiber to be coupled. It is thus possible, e.g. to effect an adjustment at room temperature while the radiation source is being operated in operation at a different temperature.
In the case where the optoelectronic or passive optical component is arranged directly on the Peltier cooler, the latter additionally performs the functions of a carrier or submount, so that a separate carrier can advantageously be dispensed with. Very compact arrangements thus result.
The Peltier coolers used are, in particular, so-called micro-Peltier coolers, having a high cooling capacity in conjunction with a small area and short response times. Production takes place by means of methods appertaining to thin film technology and Microsystems technology. For cost-effective fabrication, the micro-Peltier coolers are processed on standard silicon wafers and then separated. The micro-Peltier coolers have a thickness of less than one millimeter. The edge length is preferably less than 5 mm, and in particular is 1-2 mm. The thermoelectric functional materials are structured vertically and originate for example from the family of bismuth chalcogenides.
In a preferred refinement, the solution according to the invention is distinguished by the combination of a micro-Peltier cooler with a small constructional form for an optoelectronic assembly, for instance a small TO constructional form or a comparable small, hermetically sealed constructional form. A compact construction of Peltier cooler and an optoelectronic or passive optical component that is to be stabilized in terms of temperature is provided.
In a preferred refinement, the arrangement is constructed in such a way that the optical axis of the optoelectronic transmitting and/or receiving element is perpendicular to the Peltier cooler. A particularly compact construction is provided as a result of this.
In an advantageous embodiment, the Peltier cooler is provided with solderable metalization that can be patterned highly precisely by means of photolithographic methods. Via the metalization, it is possible to make contact with optoelectronic components arranged on the Peltier cooler directly. In this case, one contact of the optoelectronic component is soldered for example to metalization on the Peltier cooler, while the other contact is contact-connected by means of a bonding wire.
The Peltier cooler furthermore preferably has micromechanical trenches, which serve in particular for receiving an optical fiber. The trenches are preferably V-grooves etched into silicon in the 110 plane. Further structures for instance for self-alignment processes may likewise be formed on the Peltier cooler.
Moreover, additional components may be arranged on the Peltier cooler, for instance an additional monitor diode for monitoring the laser light and/or a temperature diode for monitoring the temperature, and also glass prisms for beam deflection and lenses. In this case, the Peltier cooler provides for temperature stabilization of the entire arrangement.
It is further pointed out that constructions of one- or two-dimensional arrays of diodes, for instance VCSEL diodes, may also be arranged on the Peltier cooler directly or with interposition of a carrier substrate.
The optoelectronic component is preferably a transmitting and/or receiving unit for optical message transmission. An optical component arranged on the Peltier cooler is for example a WDM filter, a multiplexer/demultiplexer or a switch.
In a further embodiment variant, optical and/or electrical components, for example a diode or a thin-film resistor, are integrated directly into the Peltier cooler. The degree of integration of the assembly is increased further as a result of this.
In one refinement of the invention, a specific Peltier cooler that provides a specific temperature regulation is in each case provided for individual components or component arrangements of the assembly. The individual specific Peltier coolers may in turn be connected to a large, conventional Peltier cooler, the specific Peltier coolers then being responsible for fine regulation.
The invention is preferably used in conjunction with passive optical components which inherently have no evolution of heat. Instead of temperature stabilization, the Peltier coolers may in this case also serve for influencing optical signals in a defined manner. Thus, a local temperature change that leads to a phase change may be brought about by means of Peltier coolers in particular in the case of optical modulators such as, for example, Mach-Zehnder interferometers or directional couplers. In particular, micro-Peltier elements can replace strip heaters used in the prior art in passive optical components appertaining to optoelectronics. In this case, a micro-Peltier element is assigned for example to an optical waveguide or optical waveguide arm of an optical modulator, the phase of the light in the optical waveguide or optical waveguide arm being set in a defined manner by means of heating or cooling.
In an advantageous further refinement, a plurality of Peltier elements are arranged in a Peltier array. In this case, the Peltier array is assigned for example to an array of passive optical elements, for instance an array of Mach-Zehnder inteferometers, and in each case provides locally for a desired temperature change.
The invention is explained in more detail below using a plurality of exemplary embodiments with reference to the figures of the drawing, in which:
FIG. 1 shows a diagrammatic illustration of a TO housing with a silicon chip arranged on a micro-Peltier cooler;
FIG. 2 shows one beside the other, a transmitting and receiving element in each case arranged in a TO housing in an arrangement in accordance withFIG. 1;
FIG. 3 shows a plan view of an exemplary embodiment of a transmitting assembly mounted on a Peltier cooler;
FIG. 4 shows an exemplary embodiment of a VCSEL laser mounted on a micro-Peltier cooler;
FIG. 5 shows an exemplary embodiment of an edge emitting laser with integrated beam deflection mounted on a micro-Peltier element;
FIG. 6 shows a detail view of the beam deflection of the arrangement ofFIG. 5;
FIG. 7 shows an arrangement in which an edge emitter laser, rotated through 90°, is coupled to a heat sink by means of a micro-Peltier element;
FIGS. 8a-bdiagrammatically show the construction of a temperature-stabilized transmitting assembly in accordance with the prior art in side and plan views;
FIGS. 9a-bdiagrammatically show the construction of a temperature-stabilized transmitting assembly according to the invention in side and plan views;
FIG. 10 shows a micromodule with double beam deflection arranged on a micro-Peltier element;
FIGS. 11a-cshow a temperature-stabilized transmitting assembly with an edge emitter in side and plan views and with a sectional view of an integrated v-groove formed in an SI chip;
FIGS. 12a-bshow an arrangement corresponding toFIGS. 11a-cwith a V-groove integrated into the Peltier element;
FIGS. 13a-dshow the arrangement of an edge emitter arranged on a Peltier element with two configurations of the edge emitter;
FIGS. 14a-bshow the arrangement of a VCSEL laser diode arranged on a Peltier element in side and plan views;
FIG. 15 shows a fiber Bragg filter arranged on a Peltier element;
FIG. 16 diagrammatically shows the arrangement of a passive optical component on a Peltier element; and
FIG. 17 shows the arrangement of a micro-Peltier cooler in a Mach-Zehnder interferometer.
FIG. 1 diagrammatically shows an exemplary embodiment of an optoelectronic transmitting and/or receivingelement1 arranged on amicro-Peltier cooler2.
The transmitting and/or receiving element is formed as achip1 having for example a laser, in particular a VCSEL laser, a photodiode or a silicon micromodule with transmitting and monitor diode and optical deflection means. Thechip1 is arranged directly on themicro-Peltier cooler2, which in this case simultaneously serves as a carrier substrate (submount). Both are situated in aTO housing3, to be precise a TO housing of small design, which has acap31. In this case, the optical axis of thechip1 runs perpendicular to themicro-Peltier cooler2.
TO (Transistor Outline) housings are standard housings known in the prior art for optical transmitting or receiving modules, the form of which is similar to the housing of a (traditional) transistor but which have a glass window for entry and exit of light at the top side. There are standardized sizes for TO housings. Small TO housings of the TO46, TO35, TO37 and TO52 standard, for example, are used in the present case, the numerical indication specifying the external diameter.
Themicro-Peltier element2 is embodied in silicon and likewise has small dimensions. It has a thickness of less than 1 mm and an edge length of 1-2 mm, for example. As an alternative, themicro-Peltier element2 may also comprise silicon carbide, diamond or other materials having high thermal conductivity.
At its top side, thecap31 has a TO window and afiber coupling32 and/or a filter element. Themicro-Peltier cooler2 is mounted on abase plate33 through which pass terminal pins34 of theTO housing3. Thechip1 is contact-connected by means of bonding wires4, one bonding wire being led from one contact pin directly to a terminal pad on the top side of thechip1, while the other bonding wire is connected to a terminal pad on the top side of themicro-Peltier cooler2. In this case, themicro-Peltier cooler2 has solderable metalization in particular gold metalization, which can be patterned highly accurately by means of photolithography. The underside of thechip1 is contact-connected via the solderable metalization.
FIG. 2 shows an arrangement in which two TOassemblies5,6 in accordance withFIG. 1 are arranged one beside the other in a transceiver. In one TOassembly5, a transmittingelement51 is arranged directly on amicro-Peltier cooler52; in the other TOassembly6, a receivingelement61 is arranged directly on amicro-Peltier cooler52. The distance A is only approximately 5-10 mm on account of the small dimensions of the TO housings. The arrangement may thus be used as a subassembly in an optoelectronic transceiver of small design.
FIG. 3 shows an example of the concrete construction of the transmitting assembly of a TO housing in accordance withFIG. 1. Accordingly, achip1 is arranged directly on themicro-Peltier element2, said chip having a micromodule with a laser diode, amonitor diode11 and atemperature diode12. The laser diode is concealed by alens7 in the plan view illustrated. The illustration likewise shows the respective bonding wires81-86 for making contact with the individual components.
Themonitor diode11 serves in a customary manner for detecting and monitoring the power radiated by the laser diode. On account of its proximity to the transmitting diode, thetemperature diode12 specifies the temperature of the transmitting diode. In this case, the signal generated by thetemperature diode12 serves for regulating thePeltier element2, i.e. this is cooled or heated depending on the temperature stabilization to be effected.
As an alternative, the use of a separate temperature diode may also be dispensed with and the monitor diode may be used for temperature measurement. It is also pointed out that the components illustrated do not have to be integrated into amicromodule1 that is then arranged on themicro-Peltier element2. Instead, laser diode, monitor diode and temperature diode may in each case also be arranged directly on themicro-Peltier element2. In this case, themonitor diode11 and thetemperature diode12 may be positioned discretely on thesilicon Peltier cooler2 or, in the event of being a silicon diode, may be integrated directly into thesilicon Peltier cooler2.
In particular, a diode and/or further components such as a thin film resistor may be integrated in the upper or lower cover of thesilicon Peltier cooler2.
FIG. 4 shows a coaxial construction of a transmitting assembly, a VCSEL laser chip9 being arranged directly on amicro-Peltier cooler2. In this case, the upper contact of the laser chip9 is provided by a bonding wire4 proceeding from the surface of themicro-Peltier cooler2. Further bonding wires connect the contact pins34 of the TO housing (illustrated incompletely) to contact pads or metalizations on the surface of themicro-Peltier cooler2. Themicro-Peltier element2 in turn serves as a submount for the laser chip9.
FIGS. 5 and 6 show an arrangement that is comparable to the arrangement ofFIG. 4, an edge emitting laser being used instead of a VCSEL laser chip. In this case, a beam deflection is integrated in thelaser chip10, said beam deflection being provided by a crystallographically etchedmirror area11 and deflecting the laterally radiated laser beam perpendicularly upward.
The exemplary embodiment ofFIG. 7 illustrates an edge emittinglaser chip13 arranged in a TO housing (again illustrated only partially) in an arrangement rotated through 90° relative toFIG. 5. In this case, thelaser chip13 is positioned directly on amicro-Peltier element2, which is in turn mounted on aheat sink12 integrated in the TO housing.
FIGS. 8aand8bshow the known construction of a construction—used for optical data transmission—with an edge emittinglaser chip14, amonitor diode15, a temperature diode16 (which is embodied for example as a thermistor), acarrier substrate17, made in particular, of silicon, on which the above-mentionedelements14,15,16 are arranged, alens18, afilter19 or optical isolator and anoptical waveguide20, in which light from thelaser14 is coupled. The arrangement is arranged altogether on acommon Peltier element21, which is in turn coupled to aheat sink22. It is disadvantageous that specific thermal regulation of the individual elements cannot be effected in this case.
FIGS. 9a,9bshow an arrangement in which thelaser chip14, themonitor diode15, thetemperature diode16 and thecorresponding carrier substrate17 are arranged on a specificmicro-Peltier cooler23. Specific temperature regulation can now be effected. If appropriate, a conventional, large Peltier element may additionally be used for the entire arrangement, in which case themicro-Peltier cooler23 would then be responsible for fine regulation.
As an alternative, thecarrier substrate17 may also be dispensed with and theelements14,15,16 may be arranged directly on themicro-Peltier cooler23.
FIG. 10 shows an exemplary embodiment of amicromodule24, which is again arranged on amicro-Peltier cooler23 formed in silicon. The micromodule has alaser25, amonitor diode26, asilicon lens27 and twoglass prisms28,29 for double beam deflection. For passive mounting of the components, alignment marks may be integrated into the micro-Peltier cooler. The micro-Peltier cooler may also have micromechanical cut-outs for forming receptacle structures for the components.
The exemplary embodiment ofFIG. 10 represents an example of the arrangement of various optical and optoelectronic components on a micro-Peltier cooler. As an alternative, the arrangement is connected to the micro-Peltier cooler by means of an additional submount.
The exemplary embodiment ofFIGS. 11a-11cis similar to the exemplary embodiment ofFIGS. 9a,9b, theoptical fiber20 being arranged in a V-groove31 ofsilicon chip30 adjoining themicro-Peltier cooler23. In this case, thefiber20 goes directly right into thelaser14 by means of a butt coupling. Instead of being arranged in anoptical fiber20, the light may also be arranged in an integrated waveguide embodied for example using glass on silicon technology. In this case, the integrated waveguide formed on thechip30 is likewise brought directly right up to thelaser14.
The arrangement illustrated permits a specific cooling only of thecomponent group14,15,16. It is not necessary to arrange the entire assembly on a Peltier element as in the prior art (cf.FIG. 8). Since themicro-Peltier cooler17 is preferably formed from silicon, it has similar thermal properties to thesilicon chip30. As a result,optical waveguide20 andlaser chip14 can be aligned with respect to one another without thesilicon chip30 also being temperature-stabilized.
InFIGS. 12a,12b, thesubmount17 arranged on themicro-Peltier cooler23 additionally performs the function of thesilicon chip30 ofFIG. 11, a V-groove being micromechanically integrated into the submount. If no submount is provided, the V-groove is introduced directly into the micro-Peltier cooler.
FIGS. 14a-14dshow a construction with anedge emitting laser14, into which, in accordance withFIG. 13c, anetching trench31 with amirror area32 is integrated, through which the light is radiated upward. In the example ofFIG. 13d, this is achieved by means of amirror area33 given upside—down mounting of thelaser diode14.
Generally, provision may be made of external prisms/mirrors or integrated arrangements for beam deflection. The latter may, however, also be monolithically integrated into the micro-Peltier element.
In accordance withFIGS. 14a,14b, a vertically emittinglaser14 with an active laser region14ais mounted on amicro-Peltier cooler23 by means of asubmount17 or directly. Amonitor diode16 serves for temperature regulation. Such a construction is particularly compact.
In a manner analogous to that described with reference to the above figures, receiving elements may also be coupled to a micro-Peltier cooler. This may involve receiver diodes whose light-sensitive area is situated on the top side or alternatively on the underside, or else laterally illuminated receiver diodes, in particular those for high data rates above 10 Gbit/s.
By way of example, use with a silicon avalanche photo diode (APD) is advantageous. In the case of construction on a Peltier cooler, the signal-to-noise ratio can be improved by means of a temperature regulation. In the case of APD diodes, the avalanche factor is temperature-dependent. In the case of an APD array, the individual pixels could be regulated to different temperatures by means of a Peltier array in order thus to compensate for the fluctuations in the gain factor, or to set different gain factors in a specific manner.
The use of amicro-Peltier cooler23 is also of interest in conjunction with passive optical components, in particular of a WDM (wavelength division multiplex) system, since they are considerably more compact than conventional arrangements and actually enable specific temperature regulation of individual components. Such components, for instance filters, multiplexers, must likewise be temperature-stabilized.
In accordance withFIG. 15, a Fabry-Perot filter34 formed in a waveguide is coupled to amicro-Peltier cooler23 by means of asubmount17.FIG. 16 generally shows a diagrammatically illustrated passiveoptical component35 on amicro-Peltier cooler23, it being possible for asubmount17 additionally to be provided. However, in this case, too, the micro-Peltier cooler may simultaneously serve as a submount.
FIG. 17 illustrates a Mach-Zehnder interferometer36 such as is employed in WDM systems. The signals of a plurality of data channels which are transmitted in anoptical waveguide38 are present at theinput37 of the Mach-Zehnder interferometer36. In this case, the individual data channels each have a different wavelength. By way of example, the wavelengths of the data channels lie in the range between 1530 nm and 1570 nm. In the frequency domain, the channel spacing is 100 GHz, for example.
The Mach-Zehnder interferometer36 operates as a spectral filter. A coupler is present at itsinput37 and divides the input signal between twoarms36a,36bof thefilter36. In order to be able to precisely set the phase difference between the twoarms36a,36b, aphase shifter39 is connected to thelower arm36b. Instead of the heating electrodes or strip heaters known in the prior art, amicro-Peltier element39 is used as the phase shifter. Thewaveguide36bcan be locally cooled or heated by means of a cooling or heating. By means of the thermo-optical effect, this process of cooling or heating causes a change in refractive index, so that the optical path length can be set by means of themicro-Peltier element39 and a phase shift can thus be generated between the signals of the twoarms36a,36b. As a result, the filter properties of thefilter36 can be configured as desired within a wide range and be designed for a wide variety of applications. In particular, the filter is designed in such a way that, at theoutput40 of the Mach-Zehnder interferometer36, the signals are distributed between two output arms in a wavelength-dependent manner.
It is equally conceivable for the Mach-Zehnder interferometer36 to represent part of an attenuator unit. The incoming signals are divided between the twoarms36a,36band combined again after a phase shift in one arm, as a result of which a defined signal attenuation can be set.
The exemplary embodiment ofFIG. 17 is only a representative example of configurations in which a phase change in a signal is brought about by means of a micro-Peltier cooler. Other examples are directional couplers, optical switches and optical multiplexers/demultiplexers. In most cases, conventionally used heating electrodes may likewise be replaced by a micro-Peltier element in each case. On account of its small size, a micro-Peltier element ensures in this case that a temperature change occurs only in a locally delimited region.