US20050077603A1

Movatterモバイル変換

Info

Publication number: US20050077603A1
Application number: US10/680,434
Authority: US
Inventors: Dylan Yu; Gary Guan; Jolas Chen; Yi-Ming Chang
Original assignee: Individual
Current assignee: United Microelectronics Corp
Priority date: 2003-10-08
Filing date: 2003-10-08
Publication date: 2005-04-14
Also published as: CN1606151A; US20050077605A1; CN100416802C; US7087464B2

Abstract

A method and structure for a wafer level package is provided, which utilizes a plurality of spacer walls on a semiconductor wafer or a transparent substrate, which has the ability to decide the position of the sealant. As a result, the dimension of a device is decided by the position of the sealant and the spacer walls, therefore, shrinking the distance between the photosensitive zone and the sealant will enhance the gross dies after performing a die sawing process to the whole semiconductor wafer. In addition, the semiconductor process decides the height of the spacer walls so that the yield will be improved due to the fact that a uniformity of the gap, which is between the semiconductor wafer and the transparent substrate, and the width of sealant, will be controlled.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention The present invention relates to a wafer level packaging, and more specifically to form spacer walls and sealant on a wafer or transparent substrate at a wafer level package.

2. Description of the Prior Art In recent years, since the circuit devices in a chip are manufactured with a high density, the IC package is also developed to high density, high efficiency and miniaturization. Typically, the packaging can protect the dies from moisture and mechanical damage. In the technology, the semiconductor dies or chips are usually individually packaged in a plastic or ceramic package after accomplishing wafer fabrication. The function of the packaging includes power distribution, signal distribution, heat dissipation, protection and support. As a result, the packaging technique is influenced by the development of integrated circuits, and the trend in electrical products is to have high integration with a small size. Therefore, the integrated circuits will be minimized so that the logic circuits within a chip or die are greatly enhanced, and the input/output (I/O) pins are also increased. In order to coordinate with the requirements and alterations as above, various types of packaging have recently been developed, for instance ball grid array (BGA), chip scale package (CSP), multi chip module package (MCM package), tape carrier package (TCP) and wafer level package (WLP) etc.

No matter what type of packaging, most of the packaging is divided into individual chips before they are packaged. However, the packaging at the wafer level is a trend in semiconductor packaging. Typically, the wafer level package utilizes the whole wafer as an object, not utilizing a single chip or die. Hence, before performing a scribing process, packaging and testing must be accomplished. This is an advanced technique so that the process of wire bonding, mold, die mount and assembly can be omitted so do lead frame and substrate. Therefore, the cost and manufacturing time will be reduced. On the other hand, the process in traditional packaging includes, die saw, die mount, wire bond, mold, trim, mark, plating and inspection etc.

A conventional packaging will be described with reference toFIG. 1A to1C. Referring toFIG. 1A, providing asemiconductor wafer101 and atransparent substrate113 firstly, thesemiconductor wafer101 comprises pluralities ofdies103 thereon, further, the pluralities ofdies103 utilize the semiconductor processes so as to manufacture pluralities of microcircuits thereof (not illustrated). Next, referring toFIG. 1B, each of thedies103 on thesemiconductor wafer101 is individually separated by a dicing saw machine so that a plurality ofindividual dies103 is obtained. Then, the individual dieslO3 are placed on asemiconductor wafer105 by a pick and place arm of a die bonder and then adhered by an epoxy (not illustrated). Thesemiconductor substrate105 comprisesborders107, wherein theborders107 are obtained from a mold with a particular pattern and the semiconductor process. As a result, eachindividual chip103 is placed on thesemiconductor substrate105 by a die bonder in the process of a die mount. Thus, theindividual dies103 are easily dropped, resulting in the gross amount ofsemiconductor wafer101 dies are greatly reduced, moreover; the yield will be decreased. Thereafter, performing a process of wire bonding in order to transfer the signal from theindividual dies103 to the outside. The process of wire bonding comprises,gold bonding wire109 wire bonds on theindividual dies103. Subsequently, as shown inFIG. 1C, after adhering and placing each individual dies103 on thesemiconductor substrate105, performing a process of mold, wherein asealant111 is coated on theborders107 and then atransparent substrate113 is covered thereon.

Another process of the sealant is refereed to TFT-LCD process, wherein the spacer balls (not illustrated) are randomly mixed with thesealant111. The function of thesealant111 is that the upper substrate of the liquid crystal pannel can adhere compactly with lower one, more, isolating the liquid crystal from the outside. The spacer balls are provided as a support between the upper substrate and the lower substrate. However, the spacer balls have become spheroids while thetransparent substrate113 is a cover. Also, the spacer walls shape is not regular so that the width of thesealant111 is hard to control, further; the uniformity of the gap, which is between the upper substrate and the lower substrate, is not able to be maintained. Hence, the electric field is variously distributed so that the gray level of the liquid crystal is influenced. Due to the fact that the sealant111 is a polymer material, it is accessible to have reactions with the liquid crystal, even overflow to a sensor area, which has adie103. In order to have a safe distance between thesealant111 and the sensor area, the dimension of the device is not simple to shrink so that the gross dies of a wafer will be decreased, more, the yield is also not improved.

By the processes of the traditional packaging or TFT-LCD process as mentioned above, the position and width of the sealant are not to be precisely and effectively controlled. Therefore, an improved method of packaging is required in order to overcome the problems of the packaging in the prior art.

SUMMARY OF THE INVENTION

It is an objective of the present invention to provide a method and structure for wafer level packaging that utilizes the semiconductor process to form the spacer walls. The position of the sealant and the scope can be precisely decided by placing the sealant beside the inner or outer side wall of the spacer walls. Hence, the distance between the sealant and the photosensitive zone will be reduced so that the gross amount of wafer dies will be improved, moreover; the throughput will be increased.

It is another objective of the present invention to provide a method and structure for a wafer level packaging that utilizes the semiconductor process to form the spacer walls. The uniformity of the gap, which is between the semiconductor wafer and transparent substrate, will be efficiency maintained by controlling the height of the spacer walls. Further, the spacer walls will control the stability and width of the sealant when the semiconductor wafer is covering and adhering to the transparent substrate. Therefore, the yield will be increased.

It is further objective of the present invention to provide a method and structure for a wafer level packaging that utilizes the semiconductor process to form the spacer walls. Hence, the spacer walls can effectively dissipate any heat and protect the die from damage caused by moisture, and the heat from the interior is effectively dissipated to the outside after the semiconductor wafer is covered and adhered on to the transparent substrate.

It is still a further objective of the present invention to provide a method and structure for a wafer level packaging, wherein a scribing process is performed after the wafer and the transparent substrate are adhered. Therefore, any contamination from particles or the dies is greatly reduced. Therefore, the yield will be improved.

According to a preferred embodiment of the present invention, a method and structure for a wafer level packaging is provided. At first, a semiconductor wafer and a transparent substrate are provided, wherein the semiconductors wafer comprises pluralities of dies thereon. Moreover, pluralities of microcircuits are manufactured on the pluralities of dies by a semiconductor process. The semiconductor wafer comprises silicon or other semiconductor materials, for instance GaAs or InP. The pluralities of dies, which are on the semiconductor wafer, include a photosensitive device. Furthermore, the transparent substrate comprises glass or quartz with a thin film thereof, for instance an anti-refection (AR) layer, a conductive layer with indium tin oxide (ITO), a UV cut layer or a IR cut layer. Then, a dielectric layer is deposited on the transparent substrate, for instance a silicon oxide layer, a silicon nitride layer or a polymer layer, wherein the polymer film comprises polyimide. Next, a photoresist layer is deposited on the dielectric layer and then a photolithography process is performed on the photoresist layer in order to expose the dielectric layer. Following that, the photoresist layer is utilized as a mask in order to perform an etching process to the dielectric layer. Finally, the photoresist layer is stripped so as to form a plurality of spacer walls, which comprise a dielectric layer on the transparent substrate. The position and shape of the spacer walls correspond to the position and shape of the pluralities of the dies, which are on the semiconductor wafer. The dimensions of the spacer walls are slightly smaller than the spacer walls, and the shape could be that of an arm figure. Besides, the position could be on opposite sites or surrounded on four sides to form a square or rectangle figure, or an L-figure.

As mentioned above, the photolithography process utilizes the pluralities of dies, which are on the semiconductor wafer, as the referable pattern. Then, an auto sealant machine coats a sealant of epoxy adhesive, UV adhesive or thermo-plastic adhesive, which joins the inner or outer side wall of the spacer walls. The semiconductor wafer is then covered by a transparent substrate; further, the pluralities of dies and the plurality of spacer walls, which are on the transparent substrate, are aligned. Finally, the process of the packaging is successively accomplished.

The wafer level packaging process is not limited to the methods and structures mentioned above. One way is to form both the spacer walls and the sealant on the semiconductor wafer. Another way is to form the spacer walls on the semiconductor wafer or transparent substrate, but form the sealant on the relative semiconductor wafer or transparent substrate and then perform the same processes as in the foregoing article in the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The objectives and features of the present inventions as well as advantages thereof will become apparent from the following detailed description, considered in conjunction with the accompanying drawings. It is to be understood, however, that the drawings, which are not to scale, are designed for the purpose of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims.

The present invention can be the best understood through the following description and accompanying drawings, wherein:

FIG. 1A to1C shows schematically cross-sectional views of various steps of a conventional method for the packaging process;

FIG. 2A to2F shows schematically cross-sectional views of various steps of the present invention that a method and structure for a wafer level packaging according to one embodiment of the present invention, wherein the spacer walls are formed on a transparent substrate; and

FIG. 3A to3E shows schematically cross-sectional views of various steps of the present invention that a method and structure for a wafer level packaging according to one embodiment of the present invention, wherein the spacer walls are formed on a semiconductor wafer.

DESCRIPTION OF THE PREFERRED EMBODIMENT

The first preferred embodiment of this invention is explained with reference to the drawings ofFIG. 2A to2F. Referring toFIG. 2A; firstly, providing asemiconductor wafer200 and atransparent substrate203 respectively, wherein thesemiconductor wafer200 is formed by a semiconductor material, for instance silicon, GaAs or InP etc. Each ofsemiconductor wafers200 includes pluralities of dies201 adjoined to each other, which have a suitable shape, for instance a rectangular or square. The pluralities of dies201 comprise a photosensitive device, for instance a CMOS image sensor, liquid crystal on silicon (LcoS) or a charge coupled device (CCD) etc. That is, each die201 has a photosensitive zone (not illustrated). In addition, the pluralities of dies201 comprise a plurality of fabricated microcircuits (not illustrated). Furthermore, each of the pluralities of dies201 having a plurality ofbonding pads201A such as aluminum pads, which are deposited on one side or both opposite sides thereof (across from each other), in order to provide the connection points with other substrates after performing a scribing process. Thebonding pads201A utilize the method of chemical vapor deposition (CVD) or physical vapor deposition (PVD) for deposit. Besides, thetransparent substrate203 comprises athin film203A, for instance an ITO layer with excellent conductivity properties, an anti-refection layer, a UV cut layer or a IR cut layer.

Thereafter, referring toFIG. 2B, providing atransparent substrate203 firstly, for instance quartz or a glass. Thetransparent substrate203 comprises athin film203A thereof. Then, adielectric layer205 is deposited on thethin film203A, wherein the material ofdielectric layer205 could be silicon oxide, silicon nitride or a polymer film (for instance polyimide). Thedielectric layer205 can utilize the method of CVD for deposit.

Following, as shown inFIG. 2C, aphotoresist layer207 is coated on thedielectric layer205 and then thespacer walls209 are formed on the surface of thetransparent substrate203 by using the exposure, photolithography and etching processes. The formation ofspacer walls209 utilizes the following process: firstly performing an exposing process in order to transfer a mask (not illustrated) with a particular pattern to thephotoresist layer207 by the way of pattern transfer. Then, the post exposure baking process is performed on the exposedphotoresist layer207 in order to reduce the standing wave phenomenon. Next, performing a photolithography process that exposed thephotoresist layer207 is stripped in order to expose the portion ofdielectric layer205. Then, utilizing theunexposed photoresist layer207 as a mask to remove the exposeddielectric layer205 and thethin film203A, which is under thedielectric layer205. That is, a method of wet etching or dry etching is utilized, for instance hydrofluoric acid (HF) of the wet etching method, plasma etching or reactive ion etch (RIE) of the dry etching method. Finally, theunexposed photoresist layer207 is stripped in order to form thespacer walls209 on thetransparent substrate203, as shown inFIG. 2D. Thespacer walls209 comprise adielectric layer205 and thethin film203A, and the height of thespacer walls209 is decided by the material of thespacer walls209. The height is typically from 0.1 to several ten micrometers.

Furthermore, the position, shape and dimension of eachspacer walls209 correspond to the shape, position and dimension of the photosensitive zone of the dies201. Further, the position, shape and dimension of thespacer walls209 correspond to the shape, location and dimension of the dies201. In one embodiment of the present invention, thespacer walls209 can have an arm shape or an arm shape with the plurality of individual, continuous or partially continuous spacer wall units. The position of thespacer walls209 with an arm shape can refer to the position of thedie201 and place them on opposite sites thereon, more; a dimension is smaller than a length of the one die. In another embodiment, the shape ofspacer wall209 is similar to the shape of one die, and the photosensitive area, which is located on the die. Besides, a dimension is smaller than the perimeter of the one die so as to have a little pitch for using. It is noted that the shape, position and dimension of thespacer walls209 as mentioned above do not limit the scope of the present invention. Those that can be manufactured by lithography methods are used to balance and support the distance between thetransparent substrate203 and dies, such as L shape, which is included with the scope of the present invention.

Subsequently, referring toFIG. 2E, usingsealant211 as coating, which the width is smaller than 1000 micrometers and the height is smaller than 200 micrometers, beside the inner or outer side wall of thespacer walls209 by a auto sealant machine. The material of thesealant211 could be epoxy adhesive, UV adhesive or thermoplastic adhesive etc. More, the material of thesealant211 is decided in conjunction with the material of thespacer walls209. When the polymer film is utilized as the material ofspacer walls209, for instance polyimide, the UV adhesive could be used because of fast curing rate and the characteristic of nonheating. However, when the oxide or nitride film is utilized as the material of thespacer walls209, any material of sealant as above-mention could be used.

As a result, the position of eachspacer walls209 is determined according to each dimension of dies201 or the photosensitive zone of the dies. More, thesealant211 adjoins the inner or outer side wall of eachspacer wall209, the position of thesealant211 could be controlled. Therefore, the distance between thesealant211 to the sensor area (photosensitive zone) having a die201 could be shrunk so that the gross dies of a wafer could be improved. Hence, the throughput is increased. Subsequently, a curing step is performed to thesealant211, for instance the UV radiation or thermal process to harden the sealant is used. Then, a grinding process, which is optional, is used to grind thesealant211 on thetransparent substrate203. Following that, thesemiconductor wafer200, which comprises pluralities of dies201, is covered on thetransparent substrate203 and aligned on the pluralities ofspacer walls209 of thetransparent substrate203. Hence, each of the dies201 is placed between twospacer walls209. Then, thesemiconductor wafer200 is adhered to thetransparent substrate203 by thesealant211. Finally, this present invention is successively accomplished.

Due to the fact that thespacer walls209 are formed in the semiconductor process, the height and uniformity can be precisely controlled. Hence, when the semiconductor wafer is covering and adhering to the transparent substrate, the uniformity of gap, which is between the semiconductor wafer and the transparent substrate, could be controlled. Also, the stability of the sealant could be controlled; therefore, the yield is improved. Further, this method does not need traditional spacer balls to mix with the sealant; therefore, the overall process will be reduced. Also, it can prevent the overflow of spacer balls into the photosensitive zone so that the distance between the sealant and photosensitive zone does not need a safety range; therefore, the throughput is improved.

After accomplishing this invention of a wafer level packaging, utilizing thespacer walls209 as a scribe line and performing a scribing process, for instance a laser saw, wafer saw etc. In the scribing process, utilizing the whole wafer as an object in order to obtain pluralities of individual dies201. Further, having pluralities ofbonding pads201A deposited on one side or both opposite sides so as to form the connecting points with the outside, wherein performing a way of cutting askew in order to expose thebonding pads201A. As a result, the present invention performs a scribing process after accomplishing the packaging for thesemiconductor wafer200. Therefore, the manufacturing time can be reduced, also; the opportunity of dropping the dies and the contamination of particles on the dies is greatly reduced, and the yield is improved.

FIG. 2F is an assistant illustration toFIG. 2E that a situation for thesemiconductor wafer200 adheres with thetransparent substrate203.

The second preferred embodiment of this invention could be explained with reference to the drawings ofFIG. 3A to3E. Referring toFIG. 3A firstly, providing asemiconductor wafer300 and atransparent substrate303 respectively, wherein thesemiconductor wafer300 comprises a semiconductor material, for instance silicon, GaAs or InP etc. Each ofsemiconductor wafers300 comprises pluralities of dies301 that have the suitable shape and adjoin to each another, for instance rectangular shape or square shape. Each of pluralities of dies301 comprises a photosensitive device, for instance CMOS image sensor, liquid crystal on silicon (LcoS), charge coupled device (CCD) etc. That is, each die301 has a photosensitive zone (not illustrated). In addition, the pluralities of dies301 comprise a plurality of fabricated microcircuits (not illustrated). Furthermore, each of the pluralities of dies has a plurality ofbonding pads301A, for instance aluminum pads, and depositing on the one side or opposite sides thereof that provide the connection points with other substrates after a scribing process is performed. Thebonding pads301A utilizes the method of chemical vapor deposition (CVD) or physical vapor deposition (PVD) for deposit. Besides, thetransparent substrate303 comprises athin film303A, for instance an ITO layer with the property of excellent conductivity, an anti-refection layer, a UV cut layer or a IR cut layer.

Subsequently, referring toFIG. 3B, adielectric layer305 is deposited on thesemiconductor wafer300, wherein thesemiconductor wafer300 comprises pluralities of dies301 thereon. The material of thedielectric layer305 could be silicon oxide, silicon nitride or a polymer film (such as polyimide). Next, aphotoresist layer307 is coated on thedielectric layer305, more; thedielectric layer305 and thephotoresist layer307 utilizes the method of CVD for deposit.

After depositing aphotoresist layer307 on thedielectric layer305, sequentially, as shown inFIG. 3C, utilizing the exposure, photolithography and etching processes to form thespacer walls309 on the surface of the dies301 of thesemiconductor wafer300. The formation of thespacer walls309 utilizes the processes as follows: at first, performing a photolithography process in order to transfer a mask (not illustrated) with a particular pattern to thephotoresist layer307 by the way of the pattern transfer. Then, the process of post exposure baking is performed on the exposedphotoresist layer307 in order to reduce the standing wave phenomenon. Next, performing a photolithography process that exposes thephotoresist layer307 is stripped in order to expose the portion of thedielectric layer305. Then, utilizing theunexposed photoresist layer307 as a mask in order to remove the exposeddielectric layer305, wherein a method of wet etching or dry etching is utilized, for instance hydrofluoric acid (HF) of wet etching method, plasma etching or reactive ion etch (RIE) of dry etching method. Finally, after stripping theunexposed photoresist layer307, thespace walls309 are formed on each of the pluralities of dies301 ofsemiconductor wafer300, for instance, placed on the opposite sites. Thespacer walls309 comprisedielectric layer305, and the height ofspacer walls309 is decided by the material ofspacer walls309 that is used. The height is typically from 0.1 to several ten micrometers.

Furthermore, the position, shape and dimension of eachspacer wall309 correspond to the shape, position and dimension of the photosensitive zone of the dies301. Further, the position, shape and dimension of thespacer walls309 correspond to the shape, position and dimension of the dies301. In one embodiment of the present invention, thespacer walls309 have an arm shape or have an arm shape with the plurality of individual, continuous or partially continuous spacer wall units. The position of thespacer walls309 with an arm shape can refer to the position of thedie301 and placing to the opposite sites thereon, furthermore; the dimension is smaller than the length of one die. In another embodiment, the shape of onespacer walls309 is similar to the shape of one die, and has a dimension smaller than the perimeter of one die so as to have a little pitch for using. It is noted that these embodiments mentioned above do not limit the scope of the present invention. Those that can be manufactured by lithography methods are used to balance and support the distance between thetransparent substrate303 and dies, such as L shape, which is included with the scope of the present invention.

Subsequently, referring toFIG. 3D, using thesealant311 as coating, which the width is smaller than 1000 micrometers and the height is smaller than 200 micrometers. Beside the inner or outer side wall of thespacer walls309 by a auto sealant machine. The material of thesealant311 could be an epoxy adhesive, UV adhesive or thermoplastic adhesive etc. More, the material of thesealant311 is decided in conjunction with the material of thespacer walls309. When the polymer film is utilized as the material of thespacer walls309, for instance polyimide, the UV adhesive could be used because of fast curing rate and the characteristic of nonheating. However, when the oxide or the nitride film is utilized as the material ofspacer walls309, any material of sealant as mention above could be used.

As a result, the position of thespacer walls309 is determined according to the dimension of each of the dies301, and thesealant311 adjoining to the inner side wall or outer side wall of thespacer walls309. Therefore, the position ofsealant311 could be controlled, and the distance between thesealant311 to the photosensitive zone, which comprises adie301, could be effectively reduced. Hence, the gross dies of a wafer could be improved and the throughput is increased. Subsequently, a curing step is performed for thesealant311, for instance the UV radiation or thermal process to harden the sealant. Then, a grinding process, which is optional, is used to grind thesealant311 on thesemiconductor wafer300. Following that, atransparent substrate303 which comprises athin film303A, covers thesemiconductor wafer300 and is aligned with the pluralities ofspacer walls309 ofsemiconductor wafer300. Hence, each of the dies301 is placed between twospacer walls309 and then thesemiconductor wafer300 is adhered with thetransparent substrate303 bysealant311. Finally, this present invention is successively accomplished. Du e to the fact that thespacer walls309 are formed with the semiconductor process, the height and uniformity can be precisely controlled. Hence, when the semiconductor wafer is covering and adhering with the transparent substrate, the uniformity of gaps, which are between the semiconductor wafer and transparent substrate, could be controlled. In addition, the stability of the sealant could be also controlled; therefore, the yield is improved. Further, this method does not need traditional spacer balls to mix with thesealant311; therefore, the process will be reduced. Also, it can prevent the spacer balls overflow into the photosensitive zone so that the distance between the sealant and photosensitive zone does not need a safety range; therefore, the throughput is improved.

Next, in accordance with the present invention of wafer level packaging, utilizing thespacer walls309 as a scribe line and performing a scribing process, for instance a laser saw, wafer saw etc. In the scribing process, utilizing the whole wafer as an object in order to obtain pluralities of individual dies301. More, on the one side or opposite sides a plurality ofbonding pads301A are deposited thereon and then performing a way of cutting askew in order to expose thebonding pads301A as a connecting point with the outsides. As a result, the present invention that performs a scribing process after accomplishing the packaging for thesemiconductor wafer300. Therefore, the manufacturing time can be reduced, moreover; the opportunity in the dropping of dies and the contamination from particles on the dies is greatly reduced, and the yield is improved.

FIG. 3E is an assistant illustration toFIG. 3D that a situation for the semiconductor wafer300 is covered and adhered to thetransparent substrate303.

In accordance with the first and second embodiment of this invention, the other embodiments will be also performed. For instance, the spacer walls could be formed on a semiconductor wafer or transparent substrate respectively. The sealant is coated on another relative semiconductor or transparent substrate. Then, a scribing process will be performed in order to obtain the individual die, which is already accomplished in the packaging process.

In accordance with the preferred embodiments as mention above, it can be realized that one of the advantages is to form the spacer walls. The formation of the spacer walls can precisely decide the position of the sealant, further, the dimension of the device could be controlled. Therefore, the gross dies, which perform a scribing process for a wafer, will be improved. Besides, precisely controlling the height of the spacer walls will control the gap between the semiconductor wafer and the transparent substrate and the stability of the. sealant. Furthermore, a scribing process is performed after the semiconductor wafer and the transparent substrate is adhered, hence, the throughput is enhanced.

The preferred embodiments are only used to illustrate the present invention, not intended to limit the scope thereof. Many modifications of the preferred embodiments can be made without departing from the spirit of the present invention.

Claims

1. A structure for a wafer level packaging, comprising:

pluralities of dies are adjoining each other, each of said pluralities of dies having a photosensitive zone;

pluralities of spacer walls are placed on the pluralities of dies, wherein each of said photosensitive zone is placed between said pluralities of spacer walls;

pluralities of sealant are placed on the pluralities of dies, wherein each of said pluralities of sealant is adjoining on a side wall of said plurality of spacer walls; and

a transparent substrate is placed on said pluralities of said spacer walls.

2. The structure for a wafer level packaging according toclaim 1, wherein a material of said pluralities of spacer walls is a silicon oxide compound.

3. The structure for a wafer level packaging according toclaim 1, wherein a material of said pluralities of spacer walls is a silicon nitride compound.

4. The structure for a wafer level packaging according toclaim 1, wherein a material of said pluralities of spacer walls is a polymer film.

5. The structure for a wafer level packaging according toclaim 4, wherein said polymer film comprises a polyimide compound.

6. The structure for a wafer level packaging according toclaim 1, wherein said transparent substrate is a glass.

7. The structure for a wafer level packaging according toclaim 1, wherein a material of said sealant is an epoxy adhesive.

8. The structure for a wafer level packaging according toclaim 1, wherein a material of said sealant is an UV adhesive.

9. The structure for a wafer level packaging according toclaim 1, wherein a material of said sealant is a thermo-plastic adhesive.

10. The structure for a wafer level packaging according toclaim 1, wherein said side wall is an inner side wall.

11. The structure for a wafer level packaging according toclaim 1, wherein said side wall is a outer side wall.

12. The structure for a wafer level packaging according toclaim 1, wherein said pluralities of spacer walls comprise two units at least.

13. The structure for a wafer level packaging according toclaim 12, wherein said pluralities of spacer walls further comprise placing on the opposite sites of said pluralities of dies.

14. The structure for a wafer level packaging according toclaim 12, wherein said pluralities of spacer walls further comprise placing on the adjacent sites of said pluralities of dies.

15. The structure for a wafer level packaging according toclaim 1, wherein said pluralities of spacer walls further comprise having pluralities of individual unit with an arm shape.

16. The structure for a wafer level packaging according toclaim 1, wherein said pluralities of spacer walls further comprise having pluralities of continuous unit with an arm shape.

17. A method for a wafer level packaging, comprising:

providing a semiconductor wafer, wherein said semiconductor wafer comprises pluralities of dies thereon;

depositing a dielectric layer on said semiconductor wafer and said pluralities of dies are covered;

removing a portion of said dielectric layer in order to form pluralities of spacer walls on said pluralities of dies;

forming pluralities of sealant and adjoining on a side wall of said pluralities of spacer walls; and

covering a transparent substrate on said semiconductor wafer.

18. The method for a wafer level packaging according toclaim 17, wherein each of said pluralities of dies comprises a photosensitive zone.

19. The method for a wafer level packaging according toclaim 17, wherein a step for removing said dielectric layer comprises exposing a photosensitive zone.

20. The method for a wafer level packaging according toclaim 19, wherein said photosensitive zone further comprises surrounding by four of said pluralities of spacer walls.

21. The method for a wafer level packaging according toclaim 17, wherein said side wall is an inner side wall.

22. The method for a wafer level packaging according toclaim 17, wherein said side wall is a outer side wall.

23. The method for a wafer level packaging according toclaim 17, wherein a material of said transparent substrate is quartz.

24. A method for a wafer level packaging, comprising:

providing a semiconductor wafer and a transparent substrate, wherein said semiconductor wafer comprises pluralities of dies thereon;

depositing a dielectric layer on said transparent substrate;

depositing a photoresist layer on said dielectric layer;

removing a portion of said photoresist layer in order to expose a portion of said dielectric layer;

removing a portion of said exposed dielectric layer, utilizing said photoresist layer as a mask in order to form pluralities of spacer walls on said transparent substrate;

forming pluralities of sealant and adjoining a side wall of said pluralities of spacer walls; and

covering said semiconductor wafer on said transparent substrate.

25. The method for a wafer level packaging according toclaim 24, wherein a step for removing said portion of said exposed dielectric layer comprises utilizing said pluralities of dies of said semiconductor wafer as a referable pattern.

26. The method for a wafer level packaging according toclaim 24, wherein said side wall is an inner side wall.

27. The method for a wafer level packaging according toclaim 24, wherein said side wall is a outer side wall.

28. The method for a wafer level packaging according toclaim 24, wherein each of said pluralities of dies comprises a photosensitive zone.