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US20050022724A1 - Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen - Google Patents

Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
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Publication number
US20050022724A1
US20050022724A1US10/628,189US62818903AUS2005022724A1US 20050022724 A1US20050022724 A1US 20050022724A1US 62818903 AUS62818903 AUS 62818903AUS 2005022724 A1US2005022724 A1US 2005022724A1
Authority
US
United States
Prior art keywords
garment
panel
animal
tunnel
front panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10/628,189
Other versions
US7147715B2 (en
US20050145164A9 (en
Inventor
David Malta
Jason Jenny
Hudson Hobgood
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Individual
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/628,189priorityCriticalpatent/US7147715B2/en
Application filed by IndividualfiledCriticalIndividual
Priority to CA002533934Aprioritypatent/CA2533934A1/en
Priority to KR1020067002078Aprioritypatent/KR20060065661A/en
Priority to JP2006521949Aprioritypatent/JP4891767B2/en
Priority to DE602004024800Tprioritypatent/DE602004024800D1/en
Priority to PCT/US2004/023861prioritypatent/WO2005012603A1/en
Priority to CNB2004800264165Aprioritypatent/CN100451184C/en
Priority to AT04779095Tprioritypatent/ATE453000T1/en
Priority to EP04779095Aprioritypatent/EP1664397B1/en
Priority to TW093122581Aprioritypatent/TW200510264A/en
Publication of US20050022724A1publicationCriticalpatent/US20050022724A1/en
Publication of US20050145164A9publicationCriticalpatent/US20050145164A9/en
Priority to US11/249,107prioritypatent/US9200381B2/en
Application grantedgrantedCritical
Publication of US7147715B2publicationCriticalpatent/US7147715B2/en
Adjusted expirationlegal-statusCritical
Expired - Lifetimelegal-statusCriticalCurrent

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Abstract

A garment for the transporting, observing, entertaining, training, and displaying of small animals, reptiles and insects (gerbils, mice, snakes, tarantulas, spiders, lizards, etc.) in the tunnels of the garment while on the shoulders of their owners. The garment consists of a see-through, mesh washable fabric panel on top and a brightly colored washable panel underneath, attached to each other using releasable fasteners. The fasteners also provide means to construct tunnel walls and nesting areas for the small animal. The fasteners further provide attachment to the garment tunnel's floor and walls for toys and other paraphernalia to entertain the pet and adorn the garment. This garment allows the owner to hold, observe, and transport his pet without damaging or soiling his clothes while his pet has a tunnel in which to play and rest safely. Also the owner can remove toys, food and nesting material in order to launder the garment.

Description

Claims (3)

1. A body mountable small animal shoulder carrier and toy garment comprising:
a top see-through, mesh fabric panel;
a bottom brightly colored fabric panel communicating with said top panel at neck opening and outer edges in order to construct tunnel walls within said garment so that a small animal, reptile, insect, etc., can easily be observed, provide adequate circulation and confine it while it is being transported and displayed;
a means of releasable attachment, such as releasable fasteners like snaps, hook-loop attachment, etc., of said top panel to bottom panel to close a gap therebetween;
a neck opening, said neck opening defined by the area in the center of the garment, creating a left front panel and right front panel to the garment;
and wherein said means of releasable attachment provides a means of lateral translation of said left front panel in relation to said right front panel, whereby said neck opening may be adjusted for size by adjustment of said means of lateral translation of said left front panel in relation to said right front panel.
US10/628,1892002-06-242003-07-28Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogenExpired - LifetimeUS7147715B2 (en)

Priority Applications (11)

Application NumberPriority DateFiling DateTitle
US10/628,189US7147715B2 (en)2003-07-282003-07-28Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
EP04779095AEP1664397B1 (en)2003-07-282004-07-26Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen
JP2006521949AJP4891767B2 (en)2003-07-282004-07-26 Growth of ultra-high purity silicon carbide crystals under hydrogen-containing atmosphere
DE602004024800TDE602004024800D1 (en)2003-07-282004-07-26 BREEDING ULTRA-HIGH-SILICIC CARBIDE CRYSTALS IN A HYDROGEN-BASED ENVIRONMENT
PCT/US2004/023861WO2005012603A1 (en)2003-07-282004-07-26Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen
CNB2004800264165ACN100451184C (en)2003-07-282004-07-26Growth of ultra-high purity silicon carbide crystals in hydrogen-containing environments
CA002533934ACA2533934A1 (en)2003-07-282004-07-26Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
KR1020067002078AKR20060065661A (en)2003-07-282004-07-26 How to grow ultra-high purity silicon carbide crystals in an ambient atmosphere containing hydrogen
AT04779095TATE453000T1 (en)2003-07-282004-07-26 GROWING ULTRA-HIGH PURE SILICON CARBIDE CRYSTALS IN A HYDROGEN-CONTAINED ENVIRONMENT
TW093122581ATW200510264A (en)2003-07-282004-07-28Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US11/249,107US9200381B2 (en)2002-06-242005-10-12Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
US10/628,189US7147715B2 (en)2003-07-282003-07-28Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen

Publications (3)

Publication NumberPublication Date
US20050022724A1true US20050022724A1 (en)2005-02-03
US20050145164A9 US20050145164A9 (en)2005-07-07
US7147715B2 US7147715B2 (en)2006-12-12

Family

ID=34103327

Family Applications (1)

Application NumberTitlePriority DateFiling Date
US10/628,189Expired - LifetimeUS7147715B2 (en)2002-06-242003-07-28Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen

Country Status (10)

CountryLink
US (1)US7147715B2 (en)
EP (1)EP1664397B1 (en)
JP (1)JP4891767B2 (en)
KR (1)KR20060065661A (en)
CN (1)CN100451184C (en)
AT (1)ATE453000T1 (en)
CA (1)CA2533934A1 (en)
DE (1)DE602004024800D1 (en)
TW (1)TW200510264A (en)
WO (1)WO2005012603A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20050126471A1 (en)*2002-06-242005-06-16Jenny Jason R.One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US20060032434A1 (en)*2004-08-102006-02-16Stephan MuellerSeed and seedholder combinations for high quality growth of large silicon carbide single crystals
US20060073707A1 (en)*2004-10-042006-04-06Adrian PowellLow 1c screw dislocation 3 inch silicon carbide wafer
US20060075958A1 (en)*2004-09-212006-04-13Adrian PowellLow basal plane dislocation bulk grown SiC wafers
US20060213430A1 (en)*2002-06-242006-09-28Jenny Jason RSeeded single crystal silicon carbide growth and resulting crystals
US20060225645A1 (en)*2005-04-072006-10-12Adrian PowellThree inch silicon carbide wafer with low warp, bow, and TTV
US20070209577A1 (en)*2004-10-042007-09-13Adrian PowellLow micropipe 100 mm silicon carbide wafer
US20090256162A1 (en)*2002-06-242009-10-15Cree, Inc.Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals
US10490635B2 (en)2016-03-042019-11-26Denso CorporationSemiconductor substrate made of silicon carbide and method for manufacturing same
US12129571B2 (en)2019-06-202024-10-29Mitsubishi Electric CorporationSilicon carbide single crystal and semiconductor apparatus

Families Citing this family (19)

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US7220313B2 (en)*2003-07-282007-05-22Cree, Inc.Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
KR100775983B1 (en)2005-09-292007-11-15네오세미테크 주식회사GROWING METHOD OF SEMI-INSULATING SiC SINGLE CRYSTAL
KR100845946B1 (en)*2007-01-102008-07-11동의대학교 산학협력단 SiC single crystal growth method
US8163086B2 (en)*2007-08-292012-04-24Cree, Inc.Halogen assisted physical vapor transport method for silicon carbide growth
JP5336307B2 (en)*2009-09-042013-11-06株式会社ブリヂストン Method for producing silicon carbide single crystal
KR101854731B1 (en)*2011-07-282018-05-04엘지이노텍 주식회사Method for ingot
JP5219230B1 (en)*2012-09-042013-06-26エルシード株式会社 SiC fluorescent material, method for producing the same, and light emitting device
CN102965733B (en)*2012-11-022015-11-18中国科学院物理研究所A kind of conductive carbonized silicon crystal growing process without graphite wrap
US11091370B2 (en)2013-05-022021-08-17Pallidus, Inc.Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en)2013-05-022017-05-23Melior Innovations, Inc.High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en)2013-05-022018-03-20Melior Innovations, Inc.Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en)2013-05-022019-06-18Pallidus, Inc.High purity polysilocarb materials, applications and processes
CN103320851A (en)*2013-06-052013-09-25中国科学院上海硅酸盐研究所Large-size 15R silicon carbide crystal preparation method
CN104947182A (en)*2015-07-162015-09-30中国电子科技集团公司第四十六研究所Method for rapidly growing large-size high-purity semi-insulating silicon carbide single crystal
CN115594508A (en)2017-03-292023-01-13帕里杜斯有限公司(Us) Silicon carbide spatial shape and method for forming spheroids
CN108118394B (en)*2017-12-282020-07-17河北同光晶体有限公司Method for reducing nitrogen impurity content in silicon carbide single crystal
CN115279956A (en)2019-12-272022-11-01沃孚半导体公司Large diameter silicon carbide wafer
US12125701B2 (en)2020-12-152024-10-22Wolfspeed, Inc.Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
US12024794B2 (en)2021-06-172024-07-02Wolfspeed, Inc.Reduced optical absorption for silicon carbide crystalline materials

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US5611955A (en)*1993-10-181997-03-18Northrop Grumman Corp.High resistivity silicon carbide substrates for high power microwave devices
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US6113451A (en)*1997-06-302000-09-05The United State Of America As Represented By The Secretary Of The NavyAtomically sharp field emission cathodes
US6218680B1 (en)*1999-05-182001-04-17Cree, Inc.Semi-insulating silicon carbide without vanadium domination

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JPH08208380A (en)1995-01-251996-08-13Nippon Steel Corp Method for producing single crystal silicon carbide
WO2000004211A1 (en)*1998-07-132000-01-27Siemens AktiengesellschaftMETHOD FOR GROWING SiC MONOCRYSTALS
DE50004010D1 (en)*1999-07-072003-11-13Siemens Ag METHOD FOR SUBLIMATION GROWING A SIC SINGLE CRYSTAL WITH HEATING UNDER GROWING PRESSURE
JP3920103B2 (en)*2002-01-312007-05-30大阪府 Insulating layer embedded type semiconductor silicon carbide substrate manufacturing method and manufacturing apparatus thereof
US7220313B2 (en)*2003-07-282007-05-22Cree, Inc.Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
JP2004099340A (en)*2002-09-052004-04-02Nippon Steel Corp Seed crystal for growing silicon carbide single crystal, silicon carbide single crystal ingot, and method for producing same

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US2854364A (en)*1954-03-191958-09-30Philips CorpSublimation process for manufacturing silicon carbide crystals
US5151384A (en)*1988-07-131992-09-29Raychem LimitedAmorphous silicon switch with forming current controlled by contact region
US5119540A (en)*1990-07-241992-06-09Cree Research, Inc.Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
US5709745A (en)*1993-01-251998-01-20Ohio Aerospace InstituteCompound semi-conductors and controlled doping thereof
US5611955A (en)*1993-10-181997-03-18Northrop Grumman Corp.High resistivity silicon carbide substrates for high power microwave devices
US5718760A (en)*1996-02-051998-02-17Cree Research, Inc.Growth of colorless silicon carbide crystals
US6200917B1 (en)*1996-02-052001-03-13Cree, Inc.Colorless silicon carbide gemstones
US6113451A (en)*1997-06-302000-09-05The United State Of America As Represented By The Secretary Of The NavyAtomically sharp field emission cathodes
US6201342B1 (en)*1997-06-302001-03-13The United States Of America As Represented By The Secretary Of The NavyAutomatically sharp field emission cathodes
US6218680B1 (en)*1999-05-182001-04-17Cree, Inc.Semi-insulating silicon carbide without vanadium domination

Cited By (37)

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Publication numberPriority datePublication dateAssigneeTitle
US20070240630A1 (en)*2002-06-242007-10-18Leonard Robert TOne hundred millimeter single crystal silicon carbide water
US20070240633A1 (en)*2002-06-242007-10-18Leonard Robert TOne hundred millimeter single crystal silicon carbide wafer
US9790619B2 (en)2002-06-242017-10-17Cree, Inc.Method of producing high quality silicon carbide crystal in a seeded growth system
US20090256162A1 (en)*2002-06-242009-10-15Cree, Inc.Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals
US20060107890A1 (en)*2002-06-242006-05-25Hobgood Hudson MOne hundred millimeter single crystal silicon carbide wafer
US20060213430A1 (en)*2002-06-242006-09-28Jenny Jason RSeeded single crystal silicon carbide growth and resulting crystals
US9200381B2 (en)2002-06-242015-12-01Cree, Inc.Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface
US20110024766A1 (en)*2002-06-242011-02-03Cree, Inc.One hundred millimeter single crystal silicon carbide wafer
US7351286B2 (en)2002-06-242008-04-01Cree, Inc.One hundred millimeter single crystal silicon carbide wafer
US7323051B2 (en)2002-06-242008-01-29Cree, Inc.One hundred millimeter single crystal silicon carbide wafer
US7316747B2 (en)2002-06-242008-01-08Cree, Inc.Seeded single crystal silicon carbide growth and resulting crystals
US7601441B2 (en)2002-06-242009-10-13Cree, Inc.One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US20050126471A1 (en)*2002-06-242005-06-16Jenny Jason R.One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US9059118B2 (en)2002-06-242015-06-16Cree, Inc.Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US8147991B2 (en)2002-06-242012-04-03Cree, Inc.One hundred millimeter single crystal silicon carbide wafer
EP2182100A2 (en)2004-06-252010-05-05Cree, Inc.High purity semi-insulating single crystal silicon carbide wafer
US20060032434A1 (en)*2004-08-102006-02-16Stephan MuellerSeed and seedholder combinations for high quality growth of large silicon carbide single crystals
US20070157874A1 (en)*2004-08-102007-07-12Stephan MuellerSeed and Seedholder Combinations for High Quality Growth of Large Silicon Carbide single Crystals
US7364617B2 (en)2004-08-102008-04-29Cree, Inc.Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7192482B2 (en)2004-08-102007-03-20Cree, Inc.Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en)2004-09-212007-11-13Cree, Inc.Low basal plane dislocation bulk grown SiC wafers
US20060075958A1 (en)*2004-09-212006-04-13Adrian PowellLow basal plane dislocation bulk grown SiC wafers
US20070209577A1 (en)*2004-10-042007-09-13Adrian PowellLow micropipe 100 mm silicon carbide wafer
US8618552B2 (en)2004-10-042013-12-31Cree, Inc.Low micropipe 100 mm silicon carbide wafer
US20060073707A1 (en)*2004-10-042006-04-06Adrian PowellLow 1c screw dislocation 3 inch silicon carbide wafer
US20080169476A1 (en)*2004-10-042008-07-17Cree, Inc.Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer
US7314521B2 (en)2004-10-042008-01-01Cree, Inc.Low micropipe 100 mm silicon carbide wafer
US8384090B2 (en)2004-10-042013-02-26Cree, Inc.Low 1C screw dislocation 3 inch silicon carbide wafer
EP2584071A1 (en)2004-10-042013-04-24Cree, Inc.Low 1c screw dislocation 3 inch silicon carbide wafer
US20080237609A1 (en)*2004-10-042008-10-02Cree, Inc.Low Micropipe 100 mm Silicon Carbide Wafer
US8785946B2 (en)2004-10-042014-07-22Cree, Inc.Low 1C screw dislocation 3 inch silicon carbide wafer
US8866159B1 (en)2004-10-042014-10-21Cree, Inc.Low micropipe 100 mm silicon carbide wafer
US7314520B2 (en)2004-10-042008-01-01Cree, Inc.Low 1c screw dislocation 3 inch silicon carbide wafer
US20060225645A1 (en)*2005-04-072006-10-12Adrian PowellThree inch silicon carbide wafer with low warp, bow, and TTV
US7422634B2 (en)2005-04-072008-09-09Cree, Inc.Three inch silicon carbide wafer with low warp, bow, and TTV
US10490635B2 (en)2016-03-042019-11-26Denso CorporationSemiconductor substrate made of silicon carbide and method for manufacturing same
US12129571B2 (en)2019-06-202024-10-29Mitsubishi Electric CorporationSilicon carbide single crystal and semiconductor apparatus

Also Published As

Publication numberPublication date
US7147715B2 (en)2006-12-12
ATE453000T1 (en)2010-01-15
WO2005012603A1 (en)2005-02-10
TW200510264A (en)2005-03-16
CN1849417A (en)2006-10-18
CN100451184C (en)2009-01-14
KR20060065661A (en)2006-06-14
CA2533934A1 (en)2005-02-10
JP2007500668A (en)2007-01-18
EP1664397B1 (en)2009-12-23
JP4891767B2 (en)2012-03-07
EP1664397A1 (en)2006-06-07
US20050145164A9 (en)2005-07-07
DE602004024800D1 (en)2010-02-04

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