


| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/628,189US7147715B2 (en) | 2003-07-28 | 2003-07-28 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| EP04779095AEP1664397B1 (en) | 2003-07-28 | 2004-07-26 | Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen |
| JP2006521949AJP4891767B2 (en) | 2003-07-28 | 2004-07-26 | Growth of ultra-high purity silicon carbide crystals under hydrogen-containing atmosphere |
| DE602004024800TDE602004024800D1 (en) | 2003-07-28 | 2004-07-26 | BREEDING ULTRA-HIGH-SILICIC CARBIDE CRYSTALS IN A HYDROGEN-BASED ENVIRONMENT |
| PCT/US2004/023861WO2005012603A1 (en) | 2003-07-28 | 2004-07-26 | Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen |
| CNB2004800264165ACN100451184C (en) | 2003-07-28 | 2004-07-26 | Growth of ultra-high purity silicon carbide crystals in hydrogen-containing environments |
| CA002533934ACA2533934A1 (en) | 2003-07-28 | 2004-07-26 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| KR1020067002078AKR20060065661A (en) | 2003-07-28 | 2004-07-26 | How to grow ultra-high purity silicon carbide crystals in an ambient atmosphere containing hydrogen |
| AT04779095TATE453000T1 (en) | 2003-07-28 | 2004-07-26 | GROWING ULTRA-HIGH PURE SILICON CARBIDE CRYSTALS IN A HYDROGEN-CONTAINED ENVIRONMENT |
| TW093122581ATW200510264A (en) | 2003-07-28 | 2004-07-28 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| US11/249,107US9200381B2 (en) | 2002-06-24 | 2005-10-12 | Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/628,189US7147715B2 (en) | 2003-07-28 | 2003-07-28 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
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| US20050022724A1true US20050022724A1 (en) | 2005-02-03 |
| US20050145164A9 US20050145164A9 (en) | 2005-07-07 |
| US7147715B2 US7147715B2 (en) | 2006-12-12 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/628,189Expired - LifetimeUS7147715B2 (en) | 2002-06-24 | 2003-07-28 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| Country | Link |
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| US (1) | US7147715B2 (en) |
| EP (1) | EP1664397B1 (en) |
| JP (1) | JP4891767B2 (en) |
| KR (1) | KR20060065661A (en) |
| CN (1) | CN100451184C (en) |
| AT (1) | ATE453000T1 (en) |
| CA (1) | CA2533934A1 (en) |
| DE (1) | DE602004024800D1 (en) |
| TW (1) | TW200510264A (en) |
| WO (1) | WO2005012603A1 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050126471A1 (en)* | 2002-06-24 | 2005-06-16 | Jenny Jason R. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| US20060032434A1 (en)* | 2004-08-10 | 2006-02-16 | Stephan Mueller | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| US20060073707A1 (en)* | 2004-10-04 | 2006-04-06 | Adrian Powell | Low 1c screw dislocation 3 inch silicon carbide wafer |
| US20060075958A1 (en)* | 2004-09-21 | 2006-04-13 | Adrian Powell | Low basal plane dislocation bulk grown SiC wafers |
| US20060213430A1 (en)* | 2002-06-24 | 2006-09-28 | Jenny Jason R | Seeded single crystal silicon carbide growth and resulting crystals |
| US20060225645A1 (en)* | 2005-04-07 | 2006-10-12 | Adrian Powell | Three inch silicon carbide wafer with low warp, bow, and TTV |
| US20070209577A1 (en)* | 2004-10-04 | 2007-09-13 | Adrian Powell | Low micropipe 100 mm silicon carbide wafer |
| US20090256162A1 (en)* | 2002-06-24 | 2009-10-15 | Cree, Inc. | Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals |
| US10490635B2 (en) | 2016-03-04 | 2019-11-26 | Denso Corporation | Semiconductor substrate made of silicon carbide and method for manufacturing same |
| US12129571B2 (en) | 2019-06-20 | 2024-10-29 | Mitsubishi Electric Corporation | Silicon carbide single crystal and semiconductor apparatus |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7220313B2 (en)* | 2003-07-28 | 2007-05-22 | Cree, Inc. | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| KR100775983B1 (en) | 2005-09-29 | 2007-11-15 | 네오세미테크 주식회사 | GROWING METHOD OF SEMI-INSULATING SiC SINGLE CRYSTAL |
| KR100845946B1 (en)* | 2007-01-10 | 2008-07-11 | 동의대학교 산학협력단 | SiC single crystal growth method |
| US8163086B2 (en)* | 2007-08-29 | 2012-04-24 | Cree, Inc. | Halogen assisted physical vapor transport method for silicon carbide growth |
| JP5336307B2 (en)* | 2009-09-04 | 2013-11-06 | 株式会社ブリヂストン | Method for producing silicon carbide single crystal |
| KR101854731B1 (en)* | 2011-07-28 | 2018-05-04 | 엘지이노텍 주식회사 | Method for ingot |
| JP5219230B1 (en)* | 2012-09-04 | 2013-06-26 | エルシード株式会社 | SiC fluorescent material, method for producing the same, and light emitting device |
| CN102965733B (en)* | 2012-11-02 | 2015-11-18 | 中国科学院物理研究所 | A kind of conductive carbonized silicon crystal growing process without graphite wrap |
| US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
| US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
| US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
| US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
| CN103320851A (en)* | 2013-06-05 | 2013-09-25 | 中国科学院上海硅酸盐研究所 | Large-size 15R silicon carbide crystal preparation method |
| CN104947182A (en)* | 2015-07-16 | 2015-09-30 | 中国电子科技集团公司第四十六研究所 | Method for rapidly growing large-size high-purity semi-insulating silicon carbide single crystal |
| CN115594508A (en) | 2017-03-29 | 2023-01-13 | 帕里杜斯有限公司(Us) | Silicon carbide spatial shape and method for forming spheroids |
| CN108118394B (en)* | 2017-12-28 | 2020-07-17 | 河北同光晶体有限公司 | Method for reducing nitrogen impurity content in silicon carbide single crystal |
| CN115279956A (en) | 2019-12-27 | 2022-11-01 | 沃孚半导体公司 | Large diameter silicon carbide wafer |
| US12125701B2 (en) | 2020-12-15 | 2024-10-22 | Wolfspeed, Inc. | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress |
| US12024794B2 (en) | 2021-06-17 | 2024-07-02 | Wolfspeed, Inc. | Reduced optical absorption for silicon carbide crystalline materials |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2854364A (en)* | 1954-03-19 | 1958-09-30 | Philips Corp | Sublimation process for manufacturing silicon carbide crystals |
| US5119540A (en)* | 1990-07-24 | 1992-06-09 | Cree Research, Inc. | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product |
| US5151384A (en)* | 1988-07-13 | 1992-09-29 | Raychem Limited | Amorphous silicon switch with forming current controlled by contact region |
| US5611955A (en)* | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| US5709745A (en)* | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
| US5718760A (en)* | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
| US6113451A (en)* | 1997-06-30 | 2000-09-05 | The United State Of America As Represented By The Secretary Of The Navy | Atomically sharp field emission cathodes |
| US6218680B1 (en)* | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9206086D0 (en)* | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | Manufacturing electronic devices comprising,e.g.tfts and mims |
| JPH08208380A (en) | 1995-01-25 | 1996-08-13 | Nippon Steel Corp | Method for producing single crystal silicon carbide |
| WO2000004211A1 (en)* | 1998-07-13 | 2000-01-27 | Siemens Aktiengesellschaft | METHOD FOR GROWING SiC MONOCRYSTALS |
| DE50004010D1 (en)* | 1999-07-07 | 2003-11-13 | Siemens Ag | METHOD FOR SUBLIMATION GROWING A SIC SINGLE CRYSTAL WITH HEATING UNDER GROWING PRESSURE |
| JP3920103B2 (en)* | 2002-01-31 | 2007-05-30 | 大阪府 | Insulating layer embedded type semiconductor silicon carbide substrate manufacturing method and manufacturing apparatus thereof |
| US7220313B2 (en)* | 2003-07-28 | 2007-05-22 | Cree, Inc. | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| JP2004099340A (en)* | 2002-09-05 | 2004-04-02 | Nippon Steel Corp | Seed crystal for growing silicon carbide single crystal, silicon carbide single crystal ingot, and method for producing same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2854364A (en)* | 1954-03-19 | 1958-09-30 | Philips Corp | Sublimation process for manufacturing silicon carbide crystals |
| US5151384A (en)* | 1988-07-13 | 1992-09-29 | Raychem Limited | Amorphous silicon switch with forming current controlled by contact region |
| US5119540A (en)* | 1990-07-24 | 1992-06-09 | Cree Research, Inc. | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product |
| US5709745A (en)* | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
| US5611955A (en)* | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| US5718760A (en)* | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
| US6200917B1 (en)* | 1996-02-05 | 2001-03-13 | Cree, Inc. | Colorless silicon carbide gemstones |
| US6113451A (en)* | 1997-06-30 | 2000-09-05 | The United State Of America As Represented By The Secretary Of The Navy | Atomically sharp field emission cathodes |
| US6201342B1 (en)* | 1997-06-30 | 2001-03-13 | The United States Of America As Represented By The Secretary Of The Navy | Automatically sharp field emission cathodes |
| US6218680B1 (en)* | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070240630A1 (en)* | 2002-06-24 | 2007-10-18 | Leonard Robert T | One hundred millimeter single crystal silicon carbide water |
| US20070240633A1 (en)* | 2002-06-24 | 2007-10-18 | Leonard Robert T | One hundred millimeter single crystal silicon carbide wafer |
| US9790619B2 (en) | 2002-06-24 | 2017-10-17 | Cree, Inc. | Method of producing high quality silicon carbide crystal in a seeded growth system |
| US20090256162A1 (en)* | 2002-06-24 | 2009-10-15 | Cree, Inc. | Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals |
| US20060107890A1 (en)* | 2002-06-24 | 2006-05-25 | Hobgood Hudson M | One hundred millimeter single crystal silicon carbide wafer |
| US20060213430A1 (en)* | 2002-06-24 | 2006-09-28 | Jenny Jason R | Seeded single crystal silicon carbide growth and resulting crystals |
| US9200381B2 (en) | 2002-06-24 | 2015-12-01 | Cree, Inc. | Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface |
| US20110024766A1 (en)* | 2002-06-24 | 2011-02-03 | Cree, Inc. | One hundred millimeter single crystal silicon carbide wafer |
| US7351286B2 (en) | 2002-06-24 | 2008-04-01 | Cree, Inc. | One hundred millimeter single crystal silicon carbide wafer |
| US7323051B2 (en) | 2002-06-24 | 2008-01-29 | Cree, Inc. | One hundred millimeter single crystal silicon carbide wafer |
| US7316747B2 (en) | 2002-06-24 | 2008-01-08 | Cree, Inc. | Seeded single crystal silicon carbide growth and resulting crystals |
| US7601441B2 (en) | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| US20050126471A1 (en)* | 2002-06-24 | 2005-06-16 | Jenny Jason R. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| US9059118B2 (en) | 2002-06-24 | 2015-06-16 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US8147991B2 (en) | 2002-06-24 | 2012-04-03 | Cree, Inc. | One hundred millimeter single crystal silicon carbide wafer |
| EP2182100A2 (en) | 2004-06-25 | 2010-05-05 | Cree, Inc. | High purity semi-insulating single crystal silicon carbide wafer |
| US20060032434A1 (en)* | 2004-08-10 | 2006-02-16 | Stephan Mueller | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| US20070157874A1 (en)* | 2004-08-10 | 2007-07-12 | Stephan Mueller | Seed and Seedholder Combinations for High Quality Growth of Large Silicon Carbide single Crystals |
| US7364617B2 (en) | 2004-08-10 | 2008-04-29 | Cree, Inc. | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| US7192482B2 (en) | 2004-08-10 | 2007-03-20 | Cree, Inc. | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| US7294324B2 (en) | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
| US20060075958A1 (en)* | 2004-09-21 | 2006-04-13 | Adrian Powell | Low basal plane dislocation bulk grown SiC wafers |
| US20070209577A1 (en)* | 2004-10-04 | 2007-09-13 | Adrian Powell | Low micropipe 100 mm silicon carbide wafer |
| US8618552B2 (en) | 2004-10-04 | 2013-12-31 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
| US20060073707A1 (en)* | 2004-10-04 | 2006-04-06 | Adrian Powell | Low 1c screw dislocation 3 inch silicon carbide wafer |
| US20080169476A1 (en)* | 2004-10-04 | 2008-07-17 | Cree, Inc. | Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer |
| US7314521B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
| US8384090B2 (en) | 2004-10-04 | 2013-02-26 | Cree, Inc. | Low 1C screw dislocation 3 inch silicon carbide wafer |
| EP2584071A1 (en) | 2004-10-04 | 2013-04-24 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
| US20080237609A1 (en)* | 2004-10-04 | 2008-10-02 | Cree, Inc. | Low Micropipe 100 mm Silicon Carbide Wafer |
| US8785946B2 (en) | 2004-10-04 | 2014-07-22 | Cree, Inc. | Low 1C screw dislocation 3 inch silicon carbide wafer |
| US8866159B1 (en) | 2004-10-04 | 2014-10-21 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
| US7314520B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
| US20060225645A1 (en)* | 2005-04-07 | 2006-10-12 | Adrian Powell | Three inch silicon carbide wafer with low warp, bow, and TTV |
| US7422634B2 (en) | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
| US10490635B2 (en) | 2016-03-04 | 2019-11-26 | Denso Corporation | Semiconductor substrate made of silicon carbide and method for manufacturing same |
| US12129571B2 (en) | 2019-06-20 | 2024-10-29 | Mitsubishi Electric Corporation | Silicon carbide single crystal and semiconductor apparatus |
| Publication number | Publication date |
|---|---|
| US7147715B2 (en) | 2006-12-12 |
| ATE453000T1 (en) | 2010-01-15 |
| WO2005012603A1 (en) | 2005-02-10 |
| TW200510264A (en) | 2005-03-16 |
| CN1849417A (en) | 2006-10-18 |
| CN100451184C (en) | 2009-01-14 |
| KR20060065661A (en) | 2006-06-14 |
| CA2533934A1 (en) | 2005-02-10 |
| JP2007500668A (en) | 2007-01-18 |
| EP1664397B1 (en) | 2009-12-23 |
| JP4891767B2 (en) | 2012-03-07 |
| EP1664397A1 (en) | 2006-06-07 |
| US20050145164A9 (en) | 2005-07-07 |
| DE602004024800D1 (en) | 2010-02-04 |
| Publication | Publication Date | Title |
|---|---|---|
| US20050022724A1 (en) | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen | |
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