Movatterモバイル変換


[0]ホーム

URL:


US20050016446A1 - CaF2 lenses with reduced birefringence - Google Patents

CaF2 lenses with reduced birefringence
Download PDF

Info

Publication number
US20050016446A1
US20050016446A1US10/885,863US88586304AUS2005016446A1US 20050016446 A1US20050016446 A1US 20050016446A1US 88586304 AUS88586304 AUS 88586304AUS 2005016446 A1US2005016446 A1US 2005016446A1
Authority
US
United States
Prior art keywords
crystal
disk
optical
birefringence
trimming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/885,863
Inventor
John Abbott
David Wilcox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning IncfiledCriticalCorning Inc
Priority to US10/885,863priorityCriticalpatent/US20050016446A1/en
Assigned to CORNING INCORPORATEDreassignmentCORNING INCORPORATEDASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: ABBOTT, III, JOHN S., WILCOX, DAVID I.
Publication of US20050016446A1publicationCriticalpatent/US20050016446A1/en
Abandonedlegal-statusCriticalCurrent

Links

Images

Classifications

Definitions

Landscapes

Abstract

The invention is directed to the trimming and grinding of disks to make lens blanks and/or lenses for lithographic stepper camera optical systems, and in particular to disks made of calcium fluoride (CaF2), metal fluorides of general formula MF2where M is calcium, magnesium, barium and strontium, and other materials suitable for use in optical systems

Description

Claims (11)

6. A method of preparing an optical element suitable for use in optical lithographic systems utilizing a selected wavelength of electromagnetic radiation, said method comprising the steps of:
growing a metal fluoride single crystal according to any method known in the art and recording the temperatures during growth;
determining the temperature profile within a crystal as it is being grown;
determining the crystallographic orientation of the grown crystal;
using the temperature profile to determine the thermal stresses within the crystal;
using the thermal stress data to build a birefringence model;
using the birefringence model to determine the parts of the crystal that should be trimmed away to form an optical element suitable for use in an optical lithography system; and
trimming the crystal to form said optical element.
9. A method of preparing an optical element suitable for use in optical lithographic systems utilizing a selected wavelength of electromagnetic radiation, said method comprising the steps of:
selecting a disk of a single crystal material made by any method known in the art;
annealing the disk by any method known in the art;
recording the temperatures during annealing;
determining the temperature profile within a crystal as it is being annealed;
determining the crystallographic orientation of the annealed crystal;
using the temperature profile to determine the thermal stresses within the crystal;
using the thermal stress data to build a birefringence model;
using the birefringence model to determine the parts of the crystal that should be trimmed away to form an optical element suitable for use in an optical lithography system; and
trimming the crystal to form said optical element.
US10/885,8632003-07-232004-07-07CaF2 lenses with reduced birefringenceAbandonedUS20050016446A1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
US10/885,863US20050016446A1 (en)2003-07-232004-07-07CaF2 lenses with reduced birefringence

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
US48932103P2003-07-232003-07-23
US10/885,863US20050016446A1 (en)2003-07-232004-07-07CaF2 lenses with reduced birefringence

Publications (1)

Publication NumberPublication Date
US20050016446A1true US20050016446A1 (en)2005-01-27

Family

ID=34102851

Family Applications (2)

Application NumberTitlePriority DateFiling Date
US10/885,863AbandonedUS20050016446A1 (en)2003-07-232004-07-07CaF2 lenses with reduced birefringence
US10/896,754Expired - Fee RelatedUS7101725B2 (en)2003-07-232004-07-22Solution to thermal budget

Family Applications After (1)

Application NumberTitlePriority DateFiling Date
US10/896,754Expired - Fee RelatedUS7101725B2 (en)2003-07-232004-07-22Solution to thermal budget

Country Status (7)

CountryLink
US (2)US20050016446A1 (en)
EP (1)EP1658519A4 (en)
JP (1)JP2006529055A (en)
KR (1)KR20060040711A (en)
CN (1)CN100468102C (en)
TW (1)TW200511591A (en)
WO (1)WO2005010949A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20080018992A1 (en)*2006-07-112008-01-24Carl Zeiss Smt AgLens blank and lens elements as well as method for their production
CN103137467A (en)*2011-11-242013-06-05联华电子股份有限公司Semiconductor manufacturing process for removing oxide layer

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7109051B2 (en)*2004-11-152006-09-19Freescale Semiconductor, Inc.Method of integrating optical devices and electronic devices on an integrated circuit
KR100641470B1 (en)*2004-12-292006-11-01동부일렉트로닉스 주식회사 Low voltage SeaMOS device manufacturing method
JP4543956B2 (en)*2005-02-182010-09-15ソニー株式会社 Semiconductor device and electronic apparatus using the same
JP2007214538A (en)*2006-01-112007-08-23Renesas Technology Corp Semiconductor device and manufacturing method thereof
US7611914B1 (en)*2006-06-162009-11-03The United States Of America As Represented By The Director, National Security AgencyMethod of fabricating turning mirror using sacrificial spacer layer and device made therefrom
US7738753B2 (en)*2008-06-302010-06-15International Business Machines CorporationCMOS compatible integrated dielectric optical waveguide coupler and fabrication
DE102009047873B4 (en)*2009-09-302018-02-01GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Optical signal exchange in a semiconductor device using monolithic optoelectronic components
CN102315266B (en)*2010-06-302013-08-28中国科学院微电子研究所Semiconductor structure and manufacturing method thereof
US8513037B2 (en)*2010-12-032013-08-20Bae Systems Information And Electronic Systems Integration Inc.Method of integrating slotted waveguide into CMOS process
US8960999B1 (en)2014-03-282015-02-24Gudpod Holdings, LlcSystem for mixing beverages and method of doing the same
CN105589131B (en)*2016-01-192018-09-28中国电子科技集团公司第二十三研究所A kind of silicon chip groove etching method for optical waveguide
EP3490000B1 (en)*2017-11-242023-01-04ams AGNear-infrared photodetector semiconductor device
US11428646B2 (en)*2020-08-282022-08-30Openlight Photonics, Inc.Loss monitoring in photonic circuit fabrication

Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6238479B1 (en)*1997-10-242001-05-29Canon Kabushiki KaishaRaw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part
US6309461B1 (en)*1999-06-072001-10-30Sandia CorporationCrystal growth and annealing method and apparatus
US6332922B1 (en)*1998-02-262001-12-25Nikon CorporationManufacturing method for calcium fluoride and calcium fluoride for photolithography
US6395657B2 (en)*2000-05-092002-05-28Corning IncorporatedFluoride crystalline optical lithography lens element blank
US6562126B2 (en)*2000-10-132003-05-13Corning IncorporatedMethod and device for producing optical fluoride crystals
US6620347B1 (en)*1999-10-062003-09-16Coherent, Inc.Crystalline filters for ultraviolet light sensors

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3217856A (en)1963-03-281965-11-16IbmPaper feeding mechanisms for typewriters
US4006432A (en)1974-10-151977-02-01Xerox CorporationIntegrated grating output coupler in diode lasers
JPS51128280A (en)1975-04-301976-11-09Hitachi LtdOptical bonding semiconojctor device and its mandfactoring metho
US4368481A (en)1979-06-191983-01-11Tokyo Shibaura Denki Kabushiki KaishaLight-driven semiconductor device
US5298787A (en)1979-08-101994-03-29Massachusetts Institute Of TechnologySemiconductor embedded layer technology including permeable base transistor
US4438447A (en)1982-01-181984-03-20Bell Telephone Laboratories, IncorporatedMultilayered optical integrated circuit
FR2562328B1 (en)1984-03-301987-11-27Menigaux Louis METHOD FOR MANUFACTURING A MONOLITHIC INTEGRATED OPTICAL DEVICE INCLUDING A SEMICONDUCTOR LASER AND DEVICE OBTAINED BY SAID METHOD
JPS61160987A (en)1985-01-091986-07-21Nec CorpIntegrated semiconductor photo element and manufacture thereof
US4734910A (en)1987-03-251988-03-29Bell Communications Research, Inc.Self mode locked semiconductor laser diode
EP0335104A3 (en)1988-03-311991-11-06Siemens AktiengesellschaftArrangement to optically couple one or a plurality of optical senders to one or a plurality of optical receivers of one or a plurality of integrated circuits
DE3834335A1 (en)1988-10-081990-04-12Telefunken Systemtechnik SEMICONDUCTOR CIRCUIT
DE3835601A1 (en)1988-10-191990-05-03Messerschmitt Boelkow Blohm DIGITAL COMPUTER WITH A MULTIPROCESSOR ARRANGEMENT
US4959540A (en)1989-05-151990-09-25International Business Machines CorporationOptical clock system with optical time delay means
US4980568A (en)1989-05-221990-12-25Hewlett-Packard CompanyOptical isolator having high voltage isolation and high light flux light guide
US4969712A (en)1989-06-221990-11-13Northern Telecom LimitedOptoelectronic apparatus and method for its fabrication
FR2662304B1 (en)1990-05-211992-07-24France Telecom METHOD OF MANUFACTURING AN INTEGRATED STRUCTURE OF LIGHT SENSOR GUIDE IN SEMICONDUCTOR MATERIAL.
JP3003944B2 (en)1990-10-042000-01-31オリンパス光学工業株式会社 Solid-state imaging device
JPH04163967A (en)1990-10-271992-06-09Canon Inc optical device
US5098861A (en)1991-01-081992-03-24Unitrode CorporationMethod of processing a semiconductor substrate including silicide bonding
SE468027B (en)1991-02-271992-10-19Asea Brown Boveri OPTION ELECTRONIC COMPONENT WITH SEMICONDUCTOR ELEMENTS INCLUDED IN THE CLOSED CAPSEL, WHICH CAPSELY CONSISTS OF A CAPE WHICH IS CENTERED AND RELATIVELY LOADED A SOCKET BY A BUILDING ELEMENT
FR2676126B1 (en)1991-04-301993-07-23France Telecom OPTOELECTRONIC DEVICE WITH INTEGRATED OPTICAL GUIDE AND PHOTODETECTOR.
US5357122A (en)1991-09-051994-10-18Sony CorporationThree-dimensional optical-electronic integrated circuit device with raised sections
US5195161A (en)1991-12-111993-03-16At&T Bell LaboratoriesOptical waveguide comprising Bragg grating coupling means
EP0567693A1 (en)1992-04-271993-11-03BRITISH TELECOMMUNICATIONS public limited companyOptical clock recovery
CA2096551A1 (en)1992-05-221993-11-23Masanori NishiguchiSemiconductor device
EP0582986B1 (en)1992-08-101999-01-20Canon Kabushiki KaishaSemiconductor device and method of manufacturing the same
US5673140A (en)1992-09-081997-09-30British Telecommunications Public Limited CompanyNon-linear semiconductor optical device
DE69421434T2 (en)1993-04-072000-06-08Mitsui Chemicals, Inc. PCB for optical elements
JP3244205B2 (en)1993-06-172002-01-07信越半導体株式会社 Semiconductor device
JP3345143B2 (en)1993-12-272002-11-18株式会社日立製作所 Manufacturing method of optical waveguide
JP3234086B2 (en)1994-01-182001-12-04キヤノン株式会社 Optical semiconductor device and method for manufacturing the same
US5418360A (en)1994-01-211995-05-23Ecole PolytechniqueSerial optical signal distribution system and method, and optical/electrical converter for implementation thereof
FR2719159B1 (en)1994-04-261996-06-14Adrien Bruno Optoelectronic device incorporating a photodetector with two diodes.
JP2701754B2 (en)*1994-10-031998-01-21日本電気株式会社 Method for manufacturing silicon light receiving element
SE503416C2 (en)1994-10-251996-06-10Asea Brown Boveri Optoelectric component and method of mounting such
EP0926742B1 (en)1995-01-232006-04-05National Institute of Advanced Industrial Science and Technology, Independent Administrative InstitutionMethod of fabricating a photo-receiving device
DE19503641A1 (en)*1995-02-061996-08-08Forschungszentrum Juelich Gmbh Layer structure with a silicide layer, and method for producing such a layer structure
US5633527A (en)1995-02-061997-05-27Sandia CorporationUnitary lens semiconductor device
JP2809124B2 (en)1995-02-091998-10-08日本電気株式会社 Optical semiconductor integrated device and method of manufacturing the same
JPH08330608A (en)1995-05-291996-12-13Oki Electric Ind Co Ltd Light receiving sensor and light receiving sensor
GB9517927D0 (en)1995-09-011995-11-01Imperial CollegeOptoelectrically gated microstructure
US5652811A (en)1996-03-061997-07-29The United States Of America As Represented By The Secretary Of The Air ForceSemiconductor on fiber optic substrate (SOFOS)
US5970081A (en)1996-09-171999-10-19Kabushiki Kaisha ToshibaGrating coupled surface emitting device
US6043515A (en)1996-09-172000-03-28Kabushiki Kaisha ToshibaOptical semiconductor device
JPH118442A (en)1996-10-071999-01-12Canon Inc Optical semiconductor device, optical communication system and method using the same
DE19642168A1 (en)1996-10-121998-04-16Preh Elektro Feinmechanik Optoelectronic component
US6031243A (en)1996-10-162000-02-29Geoff W. TaylorGrating coupled vertical cavity optoelectronic devices
FR2756384B1 (en)1996-11-281999-02-12Minot Christophe BIDIRECTIONAL DEVICE FOR TRANSPOSITION BETWEEN OPTICAL SIGNALS AND ELECTRIC SIGNALS, FOR COMMUNICATION SYSTEM
US5854804A (en)1996-12-131998-12-29Intel CorporationMethod and apparatus for synchronizing a mode locked laser with a device under test
US5812708A (en)1996-12-311998-09-22Intel CorporationMethod and apparatus for distributing an optical clock in an integrated circuit
FR2760101B1 (en)1997-02-241999-04-16Alsthom Cge Alcatel METHOD FOR ASSEMBLING AN OPTO-HYBRID DEVICE
US5987196A (en)1997-11-061999-11-16Micron Technology, Inc.Semiconductor structure having an optical signal path in a substrate and method for forming the same
EP0991126B1 (en)1997-12-092006-10-18Seiko Epson CorporationMethod of manufacturing an electrooptic device
US6320204B1 (en)1997-12-252001-11-20Seiko Epson CorporationElectro-optical device in which an extending portion of a channel region of a semiconductor layer is connected to a capacitor line and an electronic apparatus including the electro-optical device
US6066860A (en)1997-12-252000-05-23Seiko Epson CorporationSubstrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device
TW486581B (en)1998-01-062002-05-11Seiko Epson CorpSemiconductor device, substrate for electro-optical device, electro-optical device, electronic equipment, and projection display apparatus
GB2334141A (en)1998-01-301999-08-11Northern Telecom LtdSemiconductor device packaging
DE29805392U1 (en)1998-03-251999-08-05Dr. Johannes Heidenhain Gmbh, 83301 Traunreut Optoelectronic assembly
US6125217A (en)1998-06-262000-09-26Intel CorporationClock distribution network
US6202165B1 (en)1998-07-232001-03-13Conexant Systems, Inc.Photonic clock distribution method and apparatus for electronic systems
EP0977063A1 (en)1998-07-282000-02-02Interuniversitair Micro-Elektronica Centrum VzwA socket and a system for optoelectronic interconnection and a method of fabricating such socket and system
US6393183B1 (en)1998-08-132002-05-21Eugene Robert WorleyOpto-coupler device for packaging optically coupled integrated circuits
US6343171B1 (en)1998-10-092002-01-29Fujitsu LimitedSystems based on opto-electronic substrates with electrical and optical interconnections and methods for making
FI105588B (en)1998-12-102000-09-15Nokia Mobile Phones Ltd Improved light source arrangement for flat applications
JP2001024270A (en)1999-07-062001-01-26Kyocera Corp Burn-in substrate and burn-in method using the same
JP2001066560A (en)1999-08-262001-03-16Nec CorpOptical wavelength variable filter
US6647350B1 (en)*2000-06-022003-11-11Exactus, Inc.Radiometric temperature measurement system
DE60124766T2 (en)*2000-08-042007-10-11Amberwave Systems Corp. SILICON WAIST WITH MONOLITHIC OPTOELECTRONIC COMPONENTS
US20020146865A1 (en)2001-04-042002-10-10Hoel Jeffrey H.Method for selecting from standardized set of integrated circuit mask features
US6658173B2 (en)2001-05-172003-12-02Optronx, Inc.Interferometer and method of making same
US6770134B2 (en)*2001-05-242004-08-03Applied Materials, Inc.Method for fabricating waveguides
US6905542B2 (en)*2001-05-242005-06-14Arkadii V. SamoilovWaveguides such as SiGeC waveguides and method of fabricating the same
US20020181825A1 (en)2001-06-012002-12-05Motorola, Inc.Optical clock signal distribution
US6954561B1 (en)2001-07-162005-10-11Applied Materials IncMethods for forming thermo-optic switches, routers and attenuators
US20030015720A1 (en)*2001-07-182003-01-23Motorola, Inc.Structure and method for fabricating a printed circuit board utilizing a semiconductor structure and an embedded waveguide
JP2003109773A (en)2001-07-272003-04-11Semiconductor Energy Lab Co Ltd Light emitting device, semiconductor device, and manufacturing method thereof
US20030052082A1 (en)2001-09-192003-03-20Anisul KhanMethod of forming optical waveguides in a semiconductor substrate
US20030052088A1 (en)2001-09-192003-03-20Anisul KhanMethod for increasing capacitance in stacked and trench capacitors
US6947653B2 (en)2001-10-122005-09-20Jds Uniphase CorporationWaveguide stress engineering and compatible passivation in planar lightwave circuits
US20030110808A1 (en)*2001-12-142003-06-19Applied Materials Inc., A Delaware CorporationMethod of manufacturing an optical core
US20030113085A1 (en)*2001-12-142003-06-19Applied Materials, Inc., A Delaware CorporationHDP-CVD film for uppercladding application in optical waveguides
US6624077B2 (en)2001-12-172003-09-23Applied Materials, Inc.Integrated circuit waveguide
US6767751B2 (en)*2002-05-282004-07-27Silicon Light Machines, Inc.Integrated driver process flow
US7120847B2 (en)*2002-06-262006-10-10Intellon CorporationPowerline network flood control restriction
US7072534B2 (en)2002-07-222006-07-04Applied Materials, Inc.Optical ready substrates
US20050072979A1 (en)2002-07-222005-04-07Applied Materials, Inc.Optical-ready wafers
WO2004010192A2 (en)*2002-07-222004-01-29Applied Materials Inc.Optical-ready substrates with optical waveguide circuits and microelectronic circuits
US7043106B2 (en)2002-07-222006-05-09Applied Materials, Inc.Optical ready wafers
US7110629B2 (en)*2002-07-222006-09-19Applied Materials, Inc.Optical ready substrates
AU2003255254A1 (en)*2002-08-082004-02-25Glenn J. LeedyVertical system integration

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6238479B1 (en)*1997-10-242001-05-29Canon Kabushiki KaishaRaw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part
US6332922B1 (en)*1998-02-262001-12-25Nikon CorporationManufacturing method for calcium fluoride and calcium fluoride for photolithography
US6309461B1 (en)*1999-06-072001-10-30Sandia CorporationCrystal growth and annealing method and apparatus
US6620347B1 (en)*1999-10-062003-09-16Coherent, Inc.Crystalline filters for ultraviolet light sensors
US6395657B2 (en)*2000-05-092002-05-28Corning IncorporatedFluoride crystalline optical lithography lens element blank
US6562126B2 (en)*2000-10-132003-05-13Corning IncorporatedMethod and device for producing optical fluoride crystals

Cited By (8)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20080018992A1 (en)*2006-07-112008-01-24Carl Zeiss Smt AgLens blank and lens elements as well as method for their production
DE102006031995A1 (en)*2006-07-112008-01-24Carl Zeiss Smt Ag Lens blanks and lens elements and process for their preparation
US7791811B2 (en)2006-07-112010-09-07Carl Zeiss Smt AgLens blank and lens elements as well as method for their production
US20100296160A1 (en)*2006-07-112010-11-25Carl Zeiss Smt AgLens blank and lens elements as well as method for their production
US8174771B2 (en)2006-07-112012-05-08Carl Zeiss Smt GmbhLens blank and lens elements as well as method for their production
DE102006031995B4 (en)*2006-07-112013-02-28Carl Zeiss Smt Gmbh Lens blanks and lens elements and process for their preparation
US8780448B2 (en)2006-07-112014-07-15Carl Zeiss Smt GmbhLens blank and lens elements as well as method for their production
CN103137467A (en)*2011-11-242013-06-05联华电子股份有限公司Semiconductor manufacturing process for removing oxide layer

Also Published As

Publication numberPublication date
JP2006529055A (en)2006-12-28
CN1947042A (en)2007-04-11
CN100468102C (en)2009-03-11
US20050054131A1 (en)2005-03-10
WO2005010949A3 (en)2006-02-16
TW200511591A (en)2005-03-16
EP1658519A2 (en)2006-05-24
KR20060040711A (en)2006-05-10
WO2005010949A2 (en)2005-02-03
EP1658519A4 (en)2007-07-18
US7101725B2 (en)2006-09-05

Similar Documents

PublicationPublication DateTitle
US20050016446A1 (en)CaF2 lenses with reduced birefringence
US6411384B2 (en)Optical element made from fluoride single crystal, method for manufacturing optical element, method for calculating birefringence of optical element and method for determining direction of minimum birefringence of optical element
Hartmann et al.Optical glass and glass ceramic historical aspects and recent developments: a Schott view
US20240411053A1 (en)Athermal metalens and design method
US20050274145A1 (en)Low-temperature fabrication of glass optical components
US20110043787A1 (en)Photoelastic method for absolute determination of zero cte crossover in low expansion silica-titania glass samples
US20040089023A1 (en)Method for producing optical member
US7194177B2 (en)Stress-induced control of polarization dependent properties in photonic devices
EP0942297A2 (en)Optical element made from fluoride single crystal and method of manufacturing the optical element
EP0456060B1 (en)Process for bonding synthetic singel crystals
NelsonPrecision lens molding of glass: a process perspective
KR20040044918A (en)Photolithographic UV transmitting mixed fluoride crystal
US20030104318A1 (en)Photolithographic element blank calcium strontium fluoride UV transmitting mixed fluoride crystal with minimized spatial dispersion
JP2005043889A (en)CaF2 LENS REDUCED IN DOUBLE REFRACTION
Jedamzik et al.CTE characterization of ZERODUR® for the ELT century
Newswander et al.Materials for optical systems
US20030094128A1 (en)Dispersion management optical lithography crystals for below 160nm optical lithography method thereof
Hwang et al.Fabrication of chalcogenide glass lens module for thermal security camera
EP1338903B1 (en)Method of producing a member with a periodical structure smaller than a wavelength of visible light and optical element formed of the member
Askinazi et al.Development of large-aperture monolithic sapphire optical windows
JP3972374B2 (en) Silica glass annealing method
Döhring et al.Optical glasses and glass ceramics for large optical systems
JPH11240787A (en) Fluorite production method and fluorite for optical lithography
Liu et al.Study on passive compensation of temperature induced thermal lenses
DE102004035252A1 (en)Production of optical lens used in optical lithographic system comprises preparing disk of optical material, determining crystal orientation of optical material on disk, and cutting and removing material

Legal Events

DateCodeTitleDescription
ASAssignment

Owner name:CORNING INCORPORATED, NEW YORK

Free format text:ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ABBOTT, III, JOHN S.;WILCOX, DAVID I.;REEL/FRAME:015558/0310;SIGNING DATES FROM 20040701 TO 20040707

STCBInformation on status: application discontinuation

Free format text:ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION


[8]ページ先頭

©2009-2025 Movatter.jp