US20040242008A1 - Method of forming contact holes and electronic device formed thereby - Google Patents
Method of forming contact holes and electronic device formed therebyDownload PDFInfo
- Publication number
- US20040242008A1 US20040242008A1US10/795,366US79536604AUS2004242008A1US 20040242008 A1US20040242008 A1US 20040242008A1US 79536604 AUS79536604 AUS 79536604AUS 2004242008 A1US2004242008 A1US 2004242008A1
- Authority
- US
- United States
- Prior art keywords
- forming
- mask material
- insulating film
- mask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
Definitions
- the present inventionrelates to a method of forming contact holes which are formed in an interlayer insulating film or the like of a semiconductor device, and a manufacturing method for thin film semiconductor devices, a manufacturing method for electronic devices, and electronic devices.
- a conductive material such as a metalis film formed on a substrate, and is etched in order to form a lower wiring layer.
- an interlayer insulating filmis formed on the lower wiring layer.
- a photoresist filmis applied onto the interlayer insulating film, and this is exposed and developed by a photolithographic method in order to form a resist film where parts corresponding to the contact holes are opened.
- the interlayer insulating filmis dry etched with the resist film as a mask to provide openings which penetrate the interlayer insulating film and thereby form the contact holes.
- the resist filmis removed and an upper wiring layer electrically connected to the lower wiring layer via the contact holes, is formed on the interlayer insulating film.
- the conventional contact holesare formed by applying a photoresist onto an insulating film and patterning, dry etching the insulating film with the patterned resist film as a mask, and thus providing through holes in the insulating film. Therefore, the conventional method of forming contact holes requires an expensive vacuum device for dry etching the insulating film. Moreover, since it is a process using a vacuum device, much time, labor, and energy are required in order to form the contact holes, and maintenance of the vacuum device is not easy.
- the present inventionaddresses the abovementioned problems of the conventional techniques, with an object of forming contact holes without using a vacuum device.
- the method of forming contact holes according to the present inventionis a method of forming contact holes for electrically connecting a first conducting section and a second conducting section which are provided via an insulating film, and is characterized in having; a mask forming step for providing a mask material on a contact hole forming region on the first conducting section; an insulating film forming step for forming an insulating film on the whole surface of the substrate except for the mask material; and a mask material removing step for removing the mask material and forming a through hole in the insulating film.
- the present inventionafter mask material is provided on a position for forming a contact hole, an insulating film is formed on the surroundings. Then, when the mask material is removed, a through hole is formed in the insulating film, and hence this can be a contact hole. Therefore, according to the present invention, the insulating film does not need to be dry etched for forming the contact holes, and hence an expensive vacuum device is not needed. Accordingly, the contact holes can be quickly formed, and labor and energy for forming the contact holes can be reduced, so that the cost of an electronic device can be reduced. Moreover, in the present invention, since the method called dry etching is not used, problems such as plasma damage or curing of the photoresist do not occur. Furthermore, in the present invention, the lower conductive layer is only exposed to the remover of the mask material (for example, photoresist), and the conductive layer is not etched. Therefore, it becomes possible to form stable contact holes.
- the mask forming stepmay have; a film forming step for forming a mask material film composed of the mask material on the whole surface of the substrate, and a patterning step for removing unnecessary parts of the mask material film to leave the mask material film only in the contact hole forming region.
- the mask forming stepmay have; a selective application step for selectively supplying liquid material containing mask forming material to the contact hole forming region, and a solidification step for solidifying the liquid material which has been applied.
- the selective application step processmay be performed by a droplet discharge method using a droplet discharge device.
- the mask forming stepmay have; a surface treatment step for making the contact hole forming region lyophilic and the surroundings repelling, and the selective application step may be performed after the surface treatment step. In this case, it becomes possible to perform the selective application of liquid material to the lyophilic region more reliably.
- the film forming processmay have an application step for applying liquid organic material, and a solidification step for solidifying the liquid organic material to form an organic film, and the patterning step may have an exposing step for exposing the organic film, and a developing step for developing the organic film which has been exposed. Therefore, the manufacturing steps for conventional semiconductor devices can be utilized as is, so that the burden of new equipment cost can be avoided.
- the liquid organic materialcan be applied by so-called spin coating, dip coating, or the like.
- the liquid organic materialorganic material which is dispersed or dissolved in a predetermined solvent, or when the material before curing is liquid form, its liquid form organic material, can be used.
- the mask forming stephas a selective application step for selectively supplying liquid organic material to the contact hole forming region, and a solidification step for solidifying the liquid organic material which has been applied.
- the liquid organic materialcan be selectively supplied to the contact hole forming region by a quantitative discharge device such as a printer head of an inkjet printer.
- a surface treatment stepfor making the contact hole forming region lyophilic and the surroundings liquid-repelling, and then perform the selective application step.
- the mask materialis composed of an organic material such as photoresist
- a curing stepinvolving arranging the mask material which is provided on the contact hole forming region, under an atmosphere where oxygen and moisture do not substantially exist, and heating up the mask material to a predetermined temperature and irradiating ultraviolet rays onto the mask material.
- the curing processcan be performed under a reduced-pressure. If the mask material is arranged under a reduced-pressure, moisture dissolved into the mask material comes out from the mask material. Then, by the irradiation of ultraviolet rays, the cross-linking reactions can be promoted without being affected by moisture, so that the mask material can be made precise, and heat resistance and the chemical resistance can be improved.
- a heat treatment step for heating up the mask material to a predetermined temperature or moremay be added. Accordingly, the mask material can be made even more precise, and superior in heat resistance and chemical resistance, and at the same time outgassing from the mask material can be reduced in the heat treatment process in the subsequently performed insulating film forming step.
- the mask materialcomprising an organic material
- a liquid-repelling treatmentin the case where an insulating film is formed by applying a liquid insulating material, adhering of the liquid insulating material onto the upper surface of the mask material can be prevented, and the mask material can be easily removed.
- the liquid-repelling treatmentcan be performed by bleaching the mask material with activated fluorine or the like.
- the active fluorinecan be easily obtained by generating a plasma in an atmospheric pressure state (so-called atmospheric pressure plasma) from a fluoro gas such as carbon tetrafluoride (CF 4 ). If the mask material is formed by a liquid-repelling photoresist, the liquid-repelling treatment is unnecessary.
- the film forming stepmay involve film forming the inorganic mask material on the substrate by for example deposition or the like in order to form the mask material film
- the patterning stepmay involve pattern forming the mask material film by for example photoetching.
- Vacuum deposition, physical deposition such as sputtering, or chemical deposition such as CVDcan be used for the deposition of the inorganic mask material onto substrate.
- the abovementioned photoetchingis a method where a resist mask is formed onto the upper surface of the mask material film by using a photolithographic method, and then the mask material film is etched using this resist mask.
- the insulating film forming step for forming an insulating filmmay have an insulating material application step for applying liquid insulating material onto the substrate, and an insulating material solidification step for solidifying the liquid insulating material which has been applied. Therefore, it is possible to form an insulating film without using a vacuum device and the like, and the steps can be simplified and the cost reduced.
- liquid insulating material used in this caseSOG (Spin On Glass) having a siloxane bond, polysilazane, polyimide, low dielectric material (so-called Low-K material) and the like can be used.
- the liquid insulating materialneed not always have nonconductivity, provided that the finally obtained film is an insulating film.
- these liquid insulating materialscan be an insulating film typically made by heat treatment, after being dissolved in an organic solvent and applied. Therefore, the insulating material solidification step preferably involves heating the liquid insulating material.
- the mask materialin the case where the mask material comprises organic material, the mask material can be removed by, ashing with oxygen plasma under atmospheric pressure or reduced pressure, ashing with ozone, or with normal photoresist peeling liquid.
- the mask materialin the case where the mask material comprises inorganic material, the mask material can be removed by soaking in an etchant capable of dissolving this inorganic material. Of course this can be spin etched. In removing the mask material by such methods, a method which has no affect at all on the lower conductive layer can be selected. Therefore the contact holes can be stably opened.
- the methodmay include: a first mask material forming step for providing a first mask material on a contact hole forming region on the first conducting section; a first insulating film forming step for forming a first insulating film on the whole surface of the substrate except for the first mask material; a first mask material removing step for removing the first mask material and forming a first through hole in the first insulating film; a second mask material forming step for providing a second mask material on the first through hole formed in the first insulating film; a second insulating film forming step for forming a second insulating film on the whole surface of the first insulating film except for the second mask material, and a second mask material removing step for removing the second mask material and forming a second through hole which is coaxial with the first through hole in the second insulating film.
- a first mask material forming stepfor providing a first mask material on a contact hole forming region on the first conducting section
- a first insulating film forming stepfor forming a
- the methodmay include: a first mask material forming step for providing a first mask material in the contact hole forming region on the first conducting section; a first insulating film forming step for forming a first insulating film on the whole surface of the substrate except for the first mask material; a second mask material forming step for providing a second mask material on the first mask material; a second insulating film forming step for forming a second insulating film on the whole surface of the first insulating film except for the second mask material; and a mask material removing step for removing the first mask material and second mask material and forming a through hole in the first insulating film and second insulating film.
- a first mask material forming stepfor providing a first mask material in the contact hole forming region on the first conducting section
- a first insulating film forming stepfor forming a first insulating film on the whole surface of the substrate except for the first mask material
- a second mask material forming stepfor providing a second mask material on the first mask material
- the manufacturing method for a thin film semiconductor device of the present inventionis a manufacturing method for a thin film semiconductor device, for forming a thin film semiconductor device on a substrate, and it is characterized in having: a step for forming a semiconductor film containing a source and a drain region on the substrate; a step for providing a first mask material on a contact plug forming region on the source and the drain region; a step for applying liquid material onto the semiconductor film except for the contact plug forming region to form a gate insulating film; a step for removing the first mask material; a step for providing a second mask material where a gate electrode forming region is opened, on the gate insulating film; a step for applying liquid material to the gate electrode forming region which has been opened, to form a gate electrode; a step for removing the second mask material; a step for providing a third mask material on the contact plug forming region in the source and the drain region, and on a contact plug forming region in a gate electrode; a step
- the contact plugcan be quickly formed, labor and energy for forming the contact plug can be reduced, and the manufacturing cost of the thin film semiconductor device can be reduced.
- the manufacturing method for an electronic device of the present inventionis a method which uses the abovementioned method of forming contact holes of the present invention, and is characterized in having: a step for filling a conductive material into the formed contact hole, and a step for forming wiring of predetermined patterns on the filled conductive material.
- a step for filling a conductive material into the formed contact holeand a step for forming wiring of predetermined patterns on the filled conductive material.
- thismay have a step for forming wiring of a predetermined pattern on the insulating layer including the contact hole, while filling conductive material into the formed contact hole. In this way, it becomes possible to simplify the manufacturing process by filling the contact hole and forming the wiring in the same step.
- an electronic device according to the present inventionis characterized in having a contact hole formed by using the abovementioned method of forming contact holes. As a result, the abovementioned effects can be obtained.
- FIG. 1is an explanatory diagram showing some of the manufacturing step for an electronic device, according to an embodiment.
- FIG. 2is a diagram for explaining the steps following those of FIG. 1, of a first embodiment.
- FIG. 3is a flowchart of the main parts of a contact hole forming method of a second embodiment.
- FIG. 4is a flowchart of a contact hole forming method of a third embodiment.
- FIG. 5is a flowchart of a contact hole forming method of a fourth embodiment.
- FIG. 1 and FIG. 2are an example of manufacturing steps for an electronic device utilizing a contact hole forming method according to a first embodiment of the present invention. These manufacturing steps are those for where the contact hole forming method of the embodiment is applied when forming a switching circuit such as a liquid crystal panel or the like, and are a flow chart for a method for connecting a thin film transistor (TFT) comprising low temperature polysilicon (LTPS) to wiring.
- TFTthin film transistor
- LTPSlow temperature polysilicon
- a base insulation film 12such as silicon dioxide is formed on the surface of a glass substrate 10 .
- This base insulation film 12can be formed by applying a liquid material containing an insulating material such as SOG having a siloxane bond (liquid insulating material) onto the glass substrate 10 , and then baking for heat decomposition. Accordingly, there is no need to use an expensive vacuum device, and hence input energy and time required for film forming can be reduced.
- the liquid insulating materialis applied by so-called spin coating in the case of the embodiment. However, the liquid insulating material can be also applied by dip coating, liquid source misted chemical deposition (LSMCD), slit coating, or the like.
- the liquid insulating materialcan also applied by a quantitative discharge device such as a printer head of a so-called inkjet printer. If this quantitative discharge device is used, it is possible to apply to only the desired part, and hence materials can be reduced. Furthermore, as the liquid insulating material, polysilazane, polyimide, Low-K material or the like which is dispersed or dissolved in a predetermined solvent such as xylene, can be used.
- a polysilicon film 14is formed on the base insulation film 12 .
- This polysilicon film 14can be formed in the following way. Firstly, a liquid-repelling film such as fluoroplastic for example (not shown) is formed on the base insulation film 12 . Then, ultraviolet rays are irradiated onto an element forming region of this liquid-repelling film, and the liquid-repelling film of the element forming region is decomposed and removed for pattering, in order to make liquid-repelling banks. Then, liquid silane is applied to the element forming region and dried.
- a liquid-repelling filmsuch as fluoroplastic for example
- the dried liquid silane filmis baked and heat decomposed in order to make amorphous silicon film. Furthermore, ultraviolet rays are irradiated onto the whole glass substrate 10 in order to decompose and remove the liquid-repelling banks. Then an excimer laser such as a XeCl laser is irradiated onto the amorphous silicon film for annealing, and the amorphous silicon film is multicrystalized in order to make the polysilicon film 14 .
- an excimer lasersuch as a XeCl laser is irradiated onto the amorphous silicon film for annealing, and the amorphous silicon film is multicrystalized in order to make the polysilicon film 14 .
- photoresistwhich is liquid organic material
- the applied photoresistis dried (prebake) at a temperature of 70 to 90° C. to form a resist film (mask material film) 22 as shown by the two-dot chain line in FIG. 1( 1 ).
- the liquid organic materialmay be photosensitive resin (for example, polyimide).
- the liquid organic materialcan be applied by spin coating, dip coating, LSMCD, slit coating, or with a quantitative discharge device, similarly to the application of the liquid insulating material as mentioned above.
- the resist film 22is exposed and developed by a photolithographic method to leave the resist film 22 only in the contact hole forming regions on the polysilicon film 14 , which become a first conducting section, in order to make mask pillars (mask material) 24 .
- These mask pillars 24are formed to a height equivalent to or greater than the thickness of the insulating film for forming the contact holes. Moreover, these may be formed higher than the application thickness of the liquid film forming material for forming the insulating film.
- a curing processis performed for the mask pillars 24 as necessary. In the case of the embodiment, the curing process of the mask pillars 24 is performed as follows.
- the glass substrate 10 where the mask pillars 24 are formedis carried into a vacuum chamber (not shown), and the pressure in the vacuum chamber is reduced for example to 1.3 kPa (10 Torr) or less, for example to about 0.2 Torr.
- the mask pillars 24are heated up to a predetermined temperature, for example the post bake temperature of a normal photoresist, which is about 100 to 150° C. (for example 130° C.), and ultraviolet rays with a wavelength of about 254 nm are irradiated onto the mask pillars 24 .
- a predetermined temperaturefor example the post bake temperature of a normal photoresist, which is about 100 to 150° C. (for example 130° C.)
- ultraviolet rays with a wavelength of about 254 nmare irradiated onto the mask pillars 24 .
- the mask pillars 24are not affected by oxygen or moisture, they becomes precise as the cross-linking reaction progresses, and the heat resistance and the chemical resistance are improved.
- heat treatment for heating up the mask pillars 24 to the post bake temperature or moremay be performed as necessary. This heat treatment is performed for example, at a temperature of 300 to 450° C. for about 10 minutes.
- the atmosphere for the ultraviolet ray irradiationmay be for example, an atmosphere where oxygen and moisture do not substantially exist (for example a nitrogen atmosphere).
- a gate insulating film 26is formed on the whole surface of the glass substrate 10 except for the mask pillars 24 .
- This gate insulating film 26can be formed similarly to the base insulation film 12 .
- the mask pillars 24are removed in order to form first contact holes 28 passing through the gate insulating film 26 as shown in FIG. 1( 3 ).
- the liquid-repelling treatment of the mask pillarscan be performed by decomposing a gas containing fluorine atoms such as carbon tetrafluoride by a plasma in order to generate active fluorine monoatoms or ions, and bleaching the mask pillars 24 with this active fluorine.
- a resist 30is formed. Furthermore, the resist 30 is patterned in order to form an opening section 32 in a position corresponding to a gate electrode. Then, liquid material containing conductive material (for example liquid material with an organic metal compound as the main component) is supplied to the opening section 32 , and this is heat treated in order to form a gate electrode 34 . Then, the resist 30 is removed.
- the resist 30can be made up using a liquid-repelling film.
- the liquid material containing the conductive materialmay be supplied to the opening section 32 by LSMCD, spin coating, slit coating or the like.
- a quantitative discharge devicesuch as a printer head of an inkjet printer.
- an appropriate impurityfor example, boron ions in the case where a p-type conductive layer is formed
- an appropriate impurityfor example, boron ions in the case where a p-type conductive layer is formed
- boron ionsin the case where a p-type conductive layer is formed
- FIG. 1( 5 )a resist film 36 which is a mask material is formed on the whole of the glass substrate 10 .
- the resist film 36is exposed and developed by using a photolithographic method.
- mask pillars 40comprising the resist film 36 are formed on the positions corresponding to the first contact holes 28 which become contact hole forming regions, and on a predetermined position of the gate electrode 34 .
- the ones on the positions corresponding to the source region 16 and the drain region 18 on the polysilicon film 14have their lower ends in contact with the upper surfaces of the source region 16 and the drain region 18 via the first contact holes 28 .
- a curing processis performed for these mask pillars 40 as necessary, similarly to as mentioned before.
- the mask pillar 40may be formed such that the part above the gate insulating film 26 is larger than the first contact hole 28 .
- a stepis formed in the contact hole which is formed by removal of the mask pillar (refer to the FIG. 1( 2 )), and the step coverage of the contact hole is improved, so that disconnection inside the contact hole can be prevented.
- an insulating film 42comprised of silicon dioxide or the like, is formed on the surroundings of the mask pillars 40 , that is, on the whole surface of the glass substrate 10 except for the mask pillars 40 .
- This insulating film 42can be formed similarly to the base insulation film 12 and the like, by applying a liquid insulating material by LSMCD, spin coating, slit coating or the like, and then heat treating this. As a result, flattening of the surface becomes possible.
- the mask pillars 40are removed by ashing, and second contact holes 44 are formed in the insulating film 42 . At this time, the first contact holes 28 are also penetrated.
- the insulating film 42for example by sputtering or the like.
- liquid contact forming material with an organic metal compound as the main componentis supplied to the contact holes 28 and 44 , by using a quantitative discharge device (not shown). Then, the liquid contact forming material inside the contact holes 28 and 44 is baked and solidified, in order to make contact plugs 46 .
- the contact holes 28 and 44are pierced, it is preferable to irradiate ultraviolet rays onto the whole substrate and to perform lyophilic treatment of the bottom of the first contact holes 28 , that is, the contact plug forming region of the source region 16 , the drain region 18 , and the gate electrode 34 , which becomes the first conducting section.
- a resist 48is formed to cover the insulating layer 42 . Then ultraviolet rays are irradiated onto the resist 48 via a mask (not shown) for patterning, and wiring trenches 50 are formed in the resist 48 . Then, for example, a liquid wiring material where ITO fine powders or metal microparticles constituting a transparent conducting layer are dispersed in organic solvent, is supplied to the wiring trenches 50 using a quantitative discharge device, and this is then heat treated in order to form wiring 52 which becomes a second conducting section.
- the source region 16 , the drain region 18 , and the gate electrode 34 which are the first conducting section, and the wiring 52 which is the second conducting sectionare electrically connected via the contact plugs 46 provided in the contact holes. It is also possible to form this wiring 52 integrally with transparent electrodes of a liquid crystal panel (not shown).
- the resist 48is removed (refer to FIG. 2( 4 )).
- a passivation filmsuch as silicon dioxide, silicon nitride (SiN) or the like is formed to cover the wiring 52 .
- the same or different types of materialcan be adopted as the conductive material for forming the contact plugs 46 and the wiring 52 .
- the contact plugs 46 and the wiring 52may be formed in the same steps. That is to say, the wiring 52 can be formed in the wiring trenches 50 while filling the conductive material into the contact holes 28 and 44 . In this case, the same material is used for the conductive material for forming the contact plugs 46 and the wiring 52 .
- the contact holesare formed by providing the mask pillars in the forming positions for the contact holes, and then forming the insulating film around the mask pillars and removing the mask pillars. Therefore, in the embodiment, the contact holes can be formed without etching the insulating film, so that an expensive vacuum device is not needed, the number of steps can be reduced, and the steps can be simplified. Moreover, the contact holes can be quickly formed, labor and energy for forming the contact holes can be reduced, and the cost of electronic devices can be reduced. Furthermore, in the embodiment, since the mask pillars 40 are removed in order to form the contact holes, and the liquid plug forming material is supplied only to the contact holes, the usage amount of the forming material for the contact holes can be greatly reduced.
- FIG. 3is a flowchart of the main parts, for explaining a contact hole forming method of a second embodiment.
- a base insulation film 12is formed on the surface of a glass substrate 10 , and a polysilicon film 14 is provided thereon.
- a resist filmis formed (not shown in the drawing).
- the resist filmis exposed and developed to form mask pillars 24 in positions where the contact holes are planned to be formed on the polysilicon film 14 as shown in FIG. 3( 1 ).
- a gate insulating film 26comprising silicon dioxide or the like is formed on the surroundings of the mask pillars 24 .
- a resist 30is formed on the gate insulating film 26 .
- ultraviolet raysare irradiated onto the resist 30 via a mask (not shown) for patterning, in order to form an opening section 32 on the resist 30 .
- liquid electrode materialis poured into the opening section 32 , and then baked in order to form a gate electrode 34 on the gate insulating film 26 .
- the resist 30is removed.
- an impurityis implanted into the polysilicon film 14 in order to form a source region 16 and a drain region 18 , as shown in FIG. 3( 3 ).
- a resist film 36is formed to cover the gate electrode 34 and the gate insulating film.
- the resist film 36is then exposed and developed for patterning in order to form mask pillars 40 on the mask pillars 24 and on a predetermined position of the gate electrode 34 .
- curing treatment and liquid-repelling treatmentare performed for the mask pillars 40 .
- an insulating film 42is formed on the surroundings of the mask pillars 40 .
- the mask pillars 40 and 24are removed in order to form second contact holes 44 in the insulating layer 42 , and to form first contact holes 28 in the gate insulating film 26 thereunder. Thereafter, the abovementioned steps of FIGS. 2 ( 3 ) and ( 4 ) are performed in order to complete the TFT.
- FIG. 4is a flowchart for explaining a contact hole forming method of a third embodiment, being a flowchart for forming contact holes by so-called photoetching.
- a silicon film 64 dispersed with impurities and which becomes a first conducting sectionis already formed via an insulating film 62 on the upper surface of a substrate 60 of a silicon wafer, glass, or the like.
- mask material film 66comprising inorganic material such as aluminum (Al), copper (Cu), or the like, is film formed on the silicon film 64 .
- This mask material film 66 comprising inorganic materialis formed by vacuum deposition, physical deposition such as sputtering, or chemical deposition such as CVD.
- photoresistis applied onto the mask material film 66 and dried in order to form a resist film 68 .
- the resist film 68is exposed and developed by a photolithographic method to leave the resist film 68 only in the positions corresponding to the contact hole forming regions on the mask material film 66 as shown in FIG. 4( 2 ).
- the substrate 60is then soaked into an etchant capable of dissolving the mask material film 66 to etch the mask material film 66 .
- the mask material 66is left as a mask pillar 70 only under the resist film 68 .
- an insulating film 72is formed on the whole surface of the substrate 60 except for the mask pillar 70 .
- heat treatmentis performed on the insulating film 72 in order to cure the insulating film 72 .
- the substrate 60 provided with the insulating film 72is soaked in an etchant to etch and remove the mask pillar 70 being the mask material.
- a contact hole 74 passing through the insulating film 72is formed.
- a wiring layer(not shown) is formed on the insulating film 72 , and this wiring layer and the silicon film 64 are electrically connected via a contact plug or the like provided in the contact hole 74 .
- the mask material filmis formed by the organic material, and the mask pillar can be formed by subjecting this to the abovementioned photoetching, so that the contact hole can be formed.
- FIG. 5is an explanatory diagram of a fourth embodiment.
- liquid mask material 82is applied by a quantitative discharge device 80 such as a printer head of an inkjet printer, in order to form a mask material.
- the liquid mask material 82is selectively supplied only to a contact hole forming region 88 of a lower conducting section (first conducting section) 86 formed for example, on an insulating substrate 84 .
- a mask materialis formed in the contact hole forming region 88 .
- the liquid mask material 82before applying the liquid mask material 82 to the contact hole forming region 88 , it is desirable to perform a surface treatment process for making the contact hole forming region 88 lyophilic and making its surroundings 90 liquid-repelling. As a result, the liquid mask material 82 can be prevented from outspreading to the surroundings 90 of the contact hole forming region 88 . Moreover, the wettability of the liquid mask material with respect to the contact hole forming region 88 is increased and the adhesiveness of the liquid mask material is increased, so that the supply amount of the liquid mask material to the contact hole forming region 88 can be increased.
- the liquid-repelling treatment for the surroundings 90may be performed by forming a liquid-repelling film such as a fluoroplastic on the surroundings 90 .
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
- The present invention relates to a method of forming contact holes which are formed in an interlayer insulating film or the like of a semiconductor device, and a manufacturing method for thin film semiconductor devices, a manufacturing method for electronic devices, and electronic devices.[0001]
- Recently, regarding semiconductor devices, being electronic devices, wiring is multilayered in order to realize high integration. Moreover, in a semiconductor device having multilayered wiring, in the case of electrically connecting upper and lower wiring patterns arranged via an interlayer insulating film, contact holes are formed in the interlayer insulating film so that they can be connected via the contact holes. Conventionally, contact holes are generally formed in the following way as disclosed in[0002]
Patent Reference 1. - Firstly, a conductive material such as a metal is film formed on a substrate, and is etched in order to form a lower wiring layer. Next, an interlayer insulating film is formed on the lower wiring layer. Then, a photoresist film is applied onto the interlayer insulating film, and this is exposed and developed by a photolithographic method in order to form a resist film where parts corresponding to the contact holes are opened. Next, the interlayer insulating film is dry etched with the resist film as a mask to provide openings which penetrate the interlayer insulating film and thereby form the contact holes. Then, the resist film is removed and an upper wiring layer electrically connected to the lower wiring layer via the contact holes, is formed on the interlayer insulating film.[0003]
- [Patent Reference 1] Japanese Unexamined Patent Application, First Publication No. 2001-267320[0004]
- As mentioned above, the conventional contact holes are formed by applying a photoresist onto an insulating film and patterning, dry etching the insulating film with the patterned resist film as a mask, and thus providing through holes in the insulating film. Therefore, the conventional method of forming contact holes requires an expensive vacuum device for dry etching the insulating film. Moreover, since it is a process using a vacuum device, much time, labor, and energy are required in order to form the contact holes, and maintenance of the vacuum device is not easy.[0005]
- Moreover, there has been a problem when dry etching in that plasma damage occurs due to, impact of charged particles on the substrate, charge storage on the substrate surface, and the like, so that the electrical characteristic of the semiconductor device are deteriorated. Furthermore, there is a problem with dry etching in that it is difficult to sufficiently maintain the selection ratio in etching between the insulating film and the lower conductive film, and therefore there is a problem in that the lower conductive film is etched and the ohmic electrical conduction can not be removed. Furthermore, there is also a problem in that the photoresist is cured when dry etching, which makes it difficult to remove the photoresist after etching.[0006]
- The present invention addresses the abovementioned problems of the conventional techniques, with an object of forming contact holes without using a vacuum device.[0007]
- In order to achieve the above object, the method of forming contact holes according to the present invention is a method of forming contact holes for electrically connecting a first conducting section and a second conducting section which are provided via an insulating film, and is characterized in having; a mask forming step for providing a mask material on a contact hole forming region on the first conducting section; an insulating film forming step for forming an insulating film on the whole surface of the substrate except for the mask material; and a mask material removing step for removing the mask material and forming a through hole in the insulating film.[0008]
- That is to say, in the present invention, after mask material is provided on a position for forming a contact hole, an insulating film is formed on the surroundings. Then, when the mask material is removed, a through hole is formed in the insulating film, and hence this can be a contact hole. Therefore, according to the present invention, the insulating film does not need to be dry etched for forming the contact holes, and hence an expensive vacuum device is not needed. Accordingly, the contact holes can be quickly formed, and labor and energy for forming the contact holes can be reduced, so that the cost of an electronic device can be reduced. Moreover, in the present invention, since the method called dry etching is not used, problems such as plasma damage or curing of the photoresist do not occur. Furthermore, in the present invention, the lower conductive layer is only exposed to the remover of the mask material (for example, photoresist), and the conductive layer is not etched. Therefore, it becomes possible to form stable contact holes.[0009]
- The mask forming step may have; a film forming step for forming a mask material film composed of the mask material on the whole surface of the substrate, and a patterning step for removing unnecessary parts of the mask material film to leave the mask material film only in the contact hole forming region.[0010]
- Alternatively, the mask forming step may have; a selective application step for selectively supplying liquid material containing mask forming material to the contact hole forming region, and a solidification step for solidifying the liquid material which has been applied. In this case, since a removing step is not necessary, the manufacturing process is simplified. The selective application step process may be performed by a droplet discharge method using a droplet discharge device.[0011]
- Moreover, the mask forming step may have; a surface treatment step for making the contact hole forming region lyophilic and the surroundings repelling, and the selective application step may be performed after the surface treatment step. In this case, it becomes possible to perform the selective application of liquid material to the lyophilic region more reliably.[0012]
- In the case where the mask material comprises an organic material such as photoresist, the film forming process may have an application step for applying liquid organic material, and a solidification step for solidifying the liquid organic material to form an organic film, and the patterning step may have an exposing step for exposing the organic film, and a developing step for developing the organic film which has been exposed. Therefore, the manufacturing steps for conventional semiconductor devices can be utilized as is, so that the burden of new equipment cost can be avoided. The liquid organic material can be applied by so-called spin coating, dip coating, or the like. As the liquid organic material, organic material which is dispersed or dissolved in a predetermined solvent, or when the material before curing is liquid form, its liquid form organic material, can be used.[0013]
- Moreover, in the case where the mask material is an organic material, preferably the mask forming step has a selective application step for selectively supplying liquid organic material to the contact hole forming region, and a solidification step for solidifying the liquid organic material which has been applied. The liquid organic material can be selectively supplied to the contact hole forming region by a quantitative discharge device such as a printer head of an inkjet printer. In the case where the liquid organic material is selectively supplied to the contact hole forming region, it is desirable to perform a surface treatment step for making the contact hole forming region lyophilic and the surroundings liquid-repelling, and then perform the selective application step. As a result, it becomes possible to increase the wettability and the adhesiveness of the liquid organic material to the contact hole forming region and to prevent the liquid organic material from outspreading to the surroundings, so that the mask material can be reliably arranged on the contact hole forming region.[0014]
- In the case where the mask material is composed of an organic material such as photoresist, it is preferable to provide a curing step involving arranging the mask material which is provided on the contact hole forming region, under an atmosphere where oxygen and moisture do not substantially exist, and heating up the mask material to a predetermined temperature and irradiating ultraviolet rays onto the mask material. Specifically, the curing process can be performed under a reduced-pressure. If the mask material is arranged under a reduced-pressure, moisture dissolved into the mask material comes out from the mask material. Then, by the irradiation of ultraviolet rays, the cross-linking reactions can be promoted without being affected by moisture, so that the mask material can be made precise, and heat resistance and the chemical resistance can be improved. After the curing process, a heat treatment step for heating up the mask material to a predetermined temperature or more, may be added. Accordingly, the mask material can be made even more precise, and superior in heat resistance and chemical resistance, and at the same time outgassing from the mask material can be reduced in the heat treatment process in the subsequently performed insulating film forming step.[0015]
- Furthermore, it is desirable to subject the mask material comprising an organic material to a liquid-repelling treatment. If the mask material is subjected to a liquid-repelling treatment, in the case where an insulating film is formed by applying a liquid insulating material, adhering of the liquid insulating material onto the upper surface of the mask material can be prevented, and the mask material can be easily removed. The liquid-repelling treatment can be performed by bleaching the mask material with activated fluorine or the like. The active fluorine can be easily obtained by generating a plasma in an atmospheric pressure state (so-called atmospheric pressure plasma) from a fluoro gas such as carbon tetrafluoride (CF[0016]4). If the mask material is formed by a liquid-repelling photoresist, the liquid-repelling treatment is unnecessary.
- In the case where the mask material is an inorganic material such as aluminum, the film forming step may involve film forming the inorganic mask material on the substrate by for example deposition or the like in order to form the mask material film, and the patterning step may involve pattern forming the mask material film by for example photoetching. Vacuum deposition, physical deposition such as sputtering, or chemical deposition such as CVD can be used for the deposition of the inorganic mask material onto substrate. The abovementioned photoetching is a method where a resist mask is formed onto the upper surface of the mask material film by using a photolithographic method, and then the mask material film is etched using this resist mask.[0017]
- The insulating film forming step for forming an insulating film may have an insulating material application step for applying liquid insulating material onto the substrate, and an insulating material solidification step for solidifying the liquid insulating material which has been applied. Therefore, it is possible to form an insulating film without using a vacuum device and the like, and the steps can be simplified and the cost reduced.[0018]
- As the liquid insulating material used in this case, SOG (Spin On Glass) having a siloxane bond, polysilazane, polyimide, low dielectric material (so-called Low-K material) and the like can be used. Moreover, the liquid insulating material need not always have nonconductivity, provided that the finally obtained film is an insulating film. Furthermore, these liquid insulating materials can be an insulating film typically made by heat treatment, after being dissolved in an organic solvent and applied. Therefore, the insulating material solidification step preferably involves heating the liquid insulating material.[0019]
- In removing the mask material in the mask material removing step, in the case where the mask material comprises organic material, the mask material can be removed by, ashing with oxygen plasma under atmospheric pressure or reduced pressure, ashing with ozone, or with normal photoresist peeling liquid. Moreover, in the case where the mask material comprises inorganic material, the mask material can be removed by soaking in an etchant capable of dissolving this inorganic material. Of course this can be spin etched. In removing the mask material by such methods, a method which has no affect at all on the lower conductive layer can be selected. Therefore the contact holes can be stably opened.[0020]
- Next, assuming that a plurality of layers of the insulating films are formed, then the method may include: a first mask material forming step for providing a first mask material on a contact hole forming region on the first conducting section; a first insulating film forming step for forming a first insulating film on the whole surface of the substrate except for the first mask material; a first mask material removing step for removing the first mask material and forming a first through hole in the first insulating film; a second mask material forming step for providing a second mask material on the first through hole formed in the first insulating film; a second insulating film forming step for forming a second insulating film on the whole surface of the first insulating film except for the second mask material, and a second mask material removing step for removing the second mask material and forming a second through hole which is coaxial with the first through hole in the second insulating film. As a result, it becomes possible to form a contact hole through a plurality of insulating films, and it becomes possible to realize multilayer wiring which connects the first conductive layer to a third conductive layer for example.[0021]
- Alternatively, assuming that the insulating film forms a plurality of layers, then the method may include: a first mask material forming step for providing a first mask material in the contact hole forming region on the first conducting section; a first insulating film forming step for forming a first insulating film on the whole surface of the substrate except for the first mask material; a second mask material forming step for providing a second mask material on the first mask material; a second insulating film forming step for forming a second insulating film on the whole surface of the first insulating film except for the second mask material; and a mask material removing step for removing the first mask material and second mask material and forming a through hole in the first insulating film and second insulating film. In this case also, it becomes possible to realize multilayer wiring having contact holes through a plurality of insulating films. Furthermore the manufacturing process is simplified compared to the above described method for forming and removing a mask material for each of the insulating films.[0022]
- Next, the manufacturing method for a thin film semiconductor device of the present invention, is a manufacturing method for a thin film semiconductor device, for forming a thin film semiconductor device on a substrate, and it is characterized in having: a step for forming a semiconductor film containing a source and a drain region on the substrate; a step for providing a first mask material on a contact plug forming region on the source and the drain region; a step for applying liquid material onto the semiconductor film except for the contact plug forming region to form a gate insulating film; a step for removing the first mask material; a step for providing a second mask material where a gate electrode forming region is opened, on the gate insulating film; a step for applying liquid material to the gate electrode forming region which has been opened, to form a gate electrode; a step for removing the second mask material; a step for providing a third mask material on the contact plug forming region in the source and the drain region, and on a contact plug forming region in a gate electrode; a step for applying liquid material onto the gate electrode and the gate insulating film except for the contact plug forming region, to form an interlayer insulating film; a step for removing the third mask material; and a step for applying liquid material to the contact plug forming region to form a contact plug, after removing the third mask material. According to such a method, dry etching is not needed for forming a contact plug, and hence an expensive vacuum device is not needed. Accordingly, the contact plug can be quickly formed, labor and energy for forming the contact plug can be reduced, and the manufacturing cost of the thin film semiconductor device can be reduced.[0023]
- In the abovementioned manufacturing method for a thin film semiconductor device, there may be; a step for providing a fourth mask material where an electrode forming region is opened, on the interlayer insulating film and the contact plug, and a step for applying liquid material to the electrode forming region which has been opened, to form an electrode.[0024]
- Next, the manufacturing method for an electronic device of the present invention is a method which uses the abovementioned method of forming contact holes of the present invention, and is characterized in having: a step for filling a conductive material into the formed contact hole, and a step for forming wiring of predetermined patterns on the filled conductive material. By such a method, it becomes possible to easily manufacture electronic devices which are superior in electrical characteristics and highly reliable. In this case, the same or different types of conductive material can be used as the filling material for the contact hole and the forming material for the wiring.[0025]
- Moreover, as a different aspect to the manufacturing method for an electronic device of the present invention, this may have a step for forming wiring of a predetermined pattern on the insulating layer including the contact hole, while filling conductive material into the formed contact hole. In this way, it becomes possible to simplify the manufacturing process by filling the contact hole and forming the wiring in the same step.[0026]
- Moreover, an electronic device according to the present invention is characterized in having a contact hole formed by using the abovementioned method of forming contact holes. As a result, the abovementioned effects can be obtained.[0027]
- FIG. 1 is an explanatory diagram showing some of the manufacturing step for an electronic device, according to an embodiment.[0028]
- FIG. 2 is a diagram for explaining the steps following those of FIG. 1, of a first embodiment.[0029]
- FIG. 3 is a flowchart of the main parts of a contact hole forming method of a second embodiment.[0030]
- FIG. 4 is a flowchart of a contact hole forming method of a third embodiment.[0031]
- FIG. 5 is a flowchart of a contact hole forming method of a fourth embodiment.[0032]
- Preferred embodiments of a contact hole forming method according to the present invention, and an electronic device manufactured by using this method, are described in detail in accordance with the appended drawings.[0033]
- FIG. 1 and FIG. 2 are an example of manufacturing steps for an electronic device utilizing a contact hole forming method according to a first embodiment of the present invention. These manufacturing steps are those for where the contact hole forming method of the embodiment is applied when forming a switching circuit such as a liquid crystal panel or the like, and are a flow chart for a method for connecting a thin film transistor (TFT) comprising low temperature polysilicon (LTPS) to wiring.[0034]
- Firstly, as shown in FIG. 1, a[0035]
base insulation film 12 such as silicon dioxide is formed on the surface of aglass substrate 10. Thisbase insulation film 12 can be formed by applying a liquid material containing an insulating material such as SOG having a siloxane bond (liquid insulating material) onto theglass substrate 10, and then baking for heat decomposition. Accordingly, there is no need to use an expensive vacuum device, and hence input energy and time required for film forming can be reduced. The liquid insulating material is applied by so-called spin coating in the case of the embodiment. However, the liquid insulating material can be also applied by dip coating, liquid source misted chemical deposition (LSMCD), slit coating, or the like. - Moreover, the liquid insulating material can also applied by a quantitative discharge device such as a printer head of a so-called inkjet printer. If this quantitative discharge device is used, it is possible to apply to only the desired part, and hence materials can be reduced. Furthermore, as the liquid insulating material, polysilazane, polyimide, Low-K material or the like which is dispersed or dissolved in a predetermined solvent such as xylene, can be used.[0036]
- Next, a[0037]
polysilicon film 14 is formed on thebase insulation film 12. Thispolysilicon film 14 can be formed in the following way. Firstly, a liquid-repelling film such as fluoroplastic for example (not shown) is formed on thebase insulation film 12. Then, ultraviolet rays are irradiated onto an element forming region of this liquid-repelling film, and the liquid-repelling film of the element forming region is decomposed and removed for pattering, in order to make liquid-repelling banks. Then, liquid silane is applied to the element forming region and dried. - Next, the dried liquid silane film is baked and heat decomposed in order to make amorphous silicon film. Furthermore, ultraviolet rays are irradiated onto the[0038]
whole glass substrate 10 in order to decompose and remove the liquid-repelling banks. Then an excimer laser such as a XeCl laser is irradiated onto the amorphous silicon film for annealing, and the amorphous silicon film is multicrystalized in order to make thepolysilicon film 14. - Next, to cover the[0039]
polysilicon film 14 and thebase insulation film 12, photoresist, which is liquid organic material, is applied to the whole surface of theglass substrate 10. Then, the applied photoresist is dried (prebake) at a temperature of 70 to 90° C. to form a resist film (mask material film)22 as shown by the two-dot chain line in FIG. 1(1). The liquid organic material may be photosensitive resin (for example, polyimide). Moreover, the liquid organic material can be applied by spin coating, dip coating, LSMCD, slit coating, or with a quantitative discharge device, similarly to the application of the liquid insulating material as mentioned above. - Next, the resist[0040]
film 22 is exposed and developed by a photolithographic method to leave the resistfilm 22 only in the contact hole forming regions on thepolysilicon film 14, which become a first conducting section, in order to make mask pillars (mask material)24. Thesemask pillars 24 are formed to a height equivalent to or greater than the thickness of the insulating film for forming the contact holes. Moreover, these may be formed higher than the application thickness of the liquid film forming material for forming the insulating film. Furthermore, a curing process is performed for themask pillars 24 as necessary. In the case of the embodiment, the curing process of themask pillars 24 is performed as follows. - Firstly, the[0041]
glass substrate 10 where themask pillars 24 are formed, is carried into a vacuum chamber (not shown), and the pressure in the vacuum chamber is reduced for example to 1.3 kPa (10 Torr) or less, for example to about 0.2 Torr. Then, themask pillars 24 are heated up to a predetermined temperature, for example the post bake temperature of a normal photoresist, which is about 100 to 150° C. (for example 130° C.), and ultraviolet rays with a wavelength of about 254 nm are irradiated onto themask pillars 24. As a result, moisture dissolved into themask pillars 24 is dehydrated and the cross-linking reaction is promoted by the ultraviolet rays. Furthermore, since themask pillars 24 are not affected by oxygen or moisture, they becomes precise as the cross-linking reaction progresses, and the heat resistance and the chemical resistance are improved. - Furthermore, regarding the curing process of the[0042]
mask pillars 24, heat treatment for heating up themask pillars 24 to the post bake temperature or more, may be performed as necessary. This heat treatment is performed for example, at a temperature of 300 to 450° C. for about 10 minutes. As a result, mask pillars which are greatly superior in heat resistance and chemical resistance can be made, and it becomes possible to use various liquid film forming materials. Besides the low pressure state, the atmosphere for the ultraviolet ray irradiation may be for example, an atmosphere where oxygen and moisture do not substantially exist (for example a nitrogen atmosphere). - Then, as shown in FIG. 1([0043]2), a
gate insulating film 26 is formed on the whole surface of theglass substrate 10 except for themask pillars 24. Thisgate insulating film 26 can be formed similarly to thebase insulation film 12. Then, themask pillars 24 are removed in order to form first contact holes28 passing through thegate insulating film 26 as shown in FIG. 1(3). - It is desirable to perform a liquid-repelling treatment for the[0044]
mask pillars 24 before applying the liquid insulating material for forming thegate insulating film 26. Accordingly, adhering of the liquid insulating material onto the upper surface of themask pillars 24 can be prevented, and themask pillars 24 can be easily removed. The liquid-repelling treatment of the mask pillars can be performed by decomposing a gas containing fluorine atoms such as carbon tetrafluoride by a plasma in order to generate active fluorine monoatoms or ions, and bleaching themask pillars 24 with this active fluorine. - Next, as shown in FIG. 1([0045]4), to cover the
gate insulating film 26, a resist30 is formed. Furthermore, the resist30 is patterned in order to form anopening section 32 in a position corresponding to a gate electrode. Then, liquid material containing conductive material (for example liquid material with an organic metal compound as the main component) is supplied to theopening section 32, and this is heat treated in order to form agate electrode 34. Then, the resist30 is removed. The resist30 can be made up using a liquid-repelling film. - Here, the liquid material containing the conductive material may be supplied to the[0046]
opening section 32 by LSMCD, spin coating, slit coating or the like. However, it is preferable to selectively supply to theopening section 32 by for example a quantitative discharge device such as a printer head of an inkjet printer. As a result, the liquid material can be reduced, adhering of the liquid material to the surroundings of the opening section can be prevented, and agate electrode 34 of the desired thickness can be easily formed. - Next, with the[0047]
gate electrode 34 as a mask, an appropriate impurity (for example, boron ions in the case where a p-type conductive layer is formed) are impinged onto thepolysilicon film 14, in order to form asource region 16 and adrain region 18 as shown in FIG. 1(5) and form achannel region 20 matching with thegate electrode 34. Then, as shown in FIG. 1(5), a resistfilm 36 which is a mask material is formed on the whole of theglass substrate 10. Furthermore, the resistfilm 36 is exposed and developed by using a photolithographic method. - Then, as shown in FIG. 2([0048]1),
mask pillars 40 comprising the resistfilm 36 are formed on the positions corresponding to the first contact holes28 which become contact hole forming regions, and on a predetermined position of thegate electrode 34. Of thesemask pillars 40, the ones on the positions corresponding to thesource region 16 and thedrain region 18 on thepolysilicon film 14, have their lower ends in contact with the upper surfaces of thesource region 16 and thedrain region 18 via the first contact holes28. A curing process is performed for thesemask pillars 40 as necessary, similarly to as mentioned before. - Furthermore, as shown on the right side in FIG. 2([0049]1), the
mask pillar 40 may be formed such that the part above thegate insulating film 26 is larger than thefirst contact hole 28. As a result, as described later, a step is formed in the contact hole which is formed by removal of the mask pillar (refer to the FIG. 1(2)), and the step coverage of the contact hole is improved, so that disconnection inside the contact hole can be prevented. - Next, as shown in FIG. 2([0050]2), an insulating
film 42 comprised of silicon dioxide or the like, is formed on the surroundings of themask pillars 40, that is, on the whole surface of theglass substrate 10 except for themask pillars 40. This insulatingfilm 42 can be formed similarly to thebase insulation film 12 and the like, by applying a liquid insulating material by LSMCD, spin coating, slit coating or the like, and then heat treating this. As a result, flattening of the surface becomes possible. Then, themask pillars 40 are removed by ashing, and second contact holes44 are formed in the insulatingfilm 42. At this time, the first contact holes28 are also penetrated. Besides the application method using the liquid material, it is also possible to form the insulatingfilm 42 for example by sputtering or the like. - Next, as shown in FIG. 2([0051]3), liquid contact forming material with an organic metal compound as the main component, is supplied to the contact holes28 and44, by using a quantitative discharge device (not shown). Then, the liquid contact forming material inside the contact holes28 and44 is baked and solidified, in order to make contact plugs46. When the contact holes28 and44 are pierced, it is preferable to irradiate ultraviolet rays onto the whole substrate and to perform lyophilic treatment of the bottom of the first contact holes28, that is, the contact plug forming region of the
source region 16, thedrain region 18, and thegate electrode 34, which becomes the first conducting section. By performing the lyophilic treatment of these, adhesiveness and bondability with the contact plugs46 are increased, so that the electrical resistance can be reduced. - Furthermore, a resist[0052]48 is formed to cover the insulating
layer 42. Then ultraviolet rays are irradiated onto the resist48 via a mask (not shown) for patterning, andwiring trenches 50 are formed in the resist48. Then, for example, a liquid wiring material where ITO fine powders or metal microparticles constituting a transparent conducting layer are dispersed in organic solvent, is supplied to thewiring trenches 50 using a quantitative discharge device, and this is then heat treated in order to form wiring52 which becomes a second conducting section. As a result, thesource region 16, thedrain region 18, and thegate electrode 34 which are the first conducting section, and thewiring 52 which is the second conducting section are electrically connected via the contact plugs46 provided in the contact holes. It is also possible to form thiswiring 52 integrally with transparent electrodes of a liquid crystal panel (not shown). Next, the resist48 is removed (refer to FIG. 2(4)). Then, a passivation film such as silicon dioxide, silicon nitride (SiN) or the like is formed to cover thewiring 52. - The same or different types of material can be adopted as the conductive material for forming the contact plugs[0053]46 and the
wiring 52. Moreover, the contact plugs46 and thewiring 52 may be formed in the same steps. That is to say, thewiring 52 can be formed in thewiring trenches 50 while filling the conductive material into the contact holes28 and44. In this case, the same material is used for the conductive material for forming the contact plugs46 and thewiring 52. - In this manner, in the embodiment, the contact holes are formed by providing the mask pillars in the forming positions for the contact holes, and then forming the insulating film around the mask pillars and removing the mask pillars. Therefore, in the embodiment, the contact holes can be formed without etching the insulating film, so that an expensive vacuum device is not needed, the number of steps can be reduced, and the steps can be simplified. Moreover, the contact holes can be quickly formed, labor and energy for forming the contact holes can be reduced, and the cost of electronic devices can be reduced. Furthermore, in the embodiment, since the[0054]
mask pillars 40 are removed in order to form the contact holes, and the liquid plug forming material is supplied only to the contact holes, the usage amount of the forming material for the contact holes can be greatly reduced. - FIG. 3 is a flowchart of the main parts, for explaining a contact hole forming method of a second embodiment. In FIG. 3, firstly, similarly to the first embodiment described above, a[0055]
base insulation film 12 is formed on the surface of aglass substrate 10, and apolysilicon film 14 is provided thereon. Then, to cover thepolysilicon film 14 and thebase insulation film 12, a resist film is formed (not shown in the drawing). Next, the resist film is exposed and developed to formmask pillars 24 in positions where the contact holes are planned to be formed on thepolysilicon film 14 as shown in FIG. 3(1). Then, after curing treatment and liquid-repelling treatment for themask pillars 24, agate insulating film 26 comprising silicon dioxide or the like is formed on the surroundings of themask pillars 24. - Then, as shown in FIG. 3([0056]2), in the state where the
mask pillars 24 are left, a resist30 is formed on thegate insulating film 26. Then, ultraviolet rays are irradiated onto the resist30 via a mask (not shown) for patterning, in order to form anopening section 32 on the resist30. Next, liquid electrode material is poured into theopening section 32, and then baked in order to form agate electrode 34 on thegate insulating film 26. Then, the resist30 is removed. - Next, with the[0057]
gate electrode 34 as a mask, an impurity is implanted into thepolysilicon film 14 in order to form asource region 16 and adrain region 18, as shown in FIG. 3(3). Then, a resistfilm 36 is formed to cover thegate electrode 34 and the gate insulating film. The resistfilm 36 is then exposed and developed for patterning in order to formmask pillars 40 on themask pillars 24 and on a predetermined position of thegate electrode 34. Then, curing treatment and liquid-repelling treatment are performed for themask pillars 40. Next, as shown in FIG. 3(5), an insulatingfilm 42 is formed on the surroundings of themask pillars 40. Then, themask pillars layer 42, and to form first contact holes28 in thegate insulating film 26 thereunder. Thereafter, the abovementioned steps of FIGS.2(3) and (4) are performed in order to complete the TFT. - In this manner, in the contact forming method of this second embodiment, since the[0058]
mask pillars 24 provided when forming thegate insulating film 26 are removed together with the mask pillars comprising the resistfilm 36, the steps can be further simplified. - FIG. 4 is a flowchart for explaining a contact hole forming method of a third embodiment, being a flowchart for forming contact holes by so-called photoetching. In this third embodiment, as shown in FIG. 4([0059]1), a
silicon film 64 dispersed with impurities and which becomes a first conducting section, is already formed via an insulatingfilm 62 on the upper surface of asubstrate 60 of a silicon wafer, glass, or the like. - Consequently, in the contact hole forming method of this third embodiment, as shown in FIG. 4([0060]1), at first,
mask material film 66 comprising inorganic material such as aluminum (Al), copper (Cu), or the like, is film formed on thesilicon film 64. Thismask material film 66 comprising inorganic material is formed by vacuum deposition, physical deposition such as sputtering, or chemical deposition such as CVD. - Next, photoresist is applied onto the[0061]
mask material film 66 and dried in order to form a resistfilm 68. Then, the resistfilm 68 is exposed and developed by a photolithographic method to leave the resistfilm 68 only in the positions corresponding to the contact hole forming regions on themask material film 66 as shown in FIG. 4(2). Thesubstrate 60 is then soaked into an etchant capable of dissolving themask material film 66 to etch themask material film 66. As a result, as shown in FIG. 4(3), themask material 66 is left as amask pillar 70 only under the resistfilm 68. - Next, after removing the resist[0062]
film 68 by ashing or the like, as shown in FIG. 4(4), an insulatingfilm 72 is formed on the whole surface of thesubstrate 60 except for themask pillar 70. Subsequently, in the state where the mask pillar is70 formed, heat treatment is performed on the insulatingfilm 72 in order to cure the insulatingfilm 72. Then, thesubstrate 60 provided with the insulatingfilm 72 is soaked in an etchant to etch and remove themask pillar 70 being the mask material. As a result, as shown in FIG. 4(5), acontact hole 74 passing through the insulatingfilm 72 is formed. Then, similarly to the above, a wiring layer (not shown) is formed on the insulatingfilm 72, and this wiring layer and thesilicon film 64 are electrically connected via a contact plug or the like provided in thecontact hole 74. - In this manner, by using a mask material comprising an inorganic material, and selecting a contact material corresponding to the material of the first conducting section, damage to the lower conducting section due to etching for forming the contact holes can be eliminated. Therefore, adhesiveness and bondability with the conductive material arranged inside the contact hole, are improved so that the connection resistance can be reduced. Moreover, when etching for forming the[0063]
mask pillar 70, even in the case of so-called over etching, thelower silicon film 64 is not damaged, and themask pillar 70 is formed in a rather small size. Therefore, since thecontact hole 74 formed by thismask pillar 70 is only formed in a rather small size, there is little likelihood of causing breakdown voltage deficiency, or a short circuit with another conducting section. - In the case where an organic material such as non-photosensitive polyimide is used for the mask material, the mask material film is formed by the organic material, and the mask pillar can be formed by subjecting this to the abovementioned photoetching, so that the contact hole can be formed.[0064]
- FIG. 5 is an explanatory diagram of a fourth embodiment. In the contact hole forming method of this embodiment,[0065]
liquid mask material 82 is applied by aquantitative discharge device 80 such as a printer head of an inkjet printer, in order to form a mask material. In this case, theliquid mask material 82 is selectively supplied only to a contacthole forming region 88 of a lower conducting section (first conducting section)86 formed for example, on an insulatingsubstrate 84. Then, by solidifying theliquid mask material 82 supplied to the contacthole forming region 88, a mask material is formed in the contacthole forming region 88. - In this case, before applying the[0066]
liquid mask material 82 to the contacthole forming region 88, it is desirable to perform a surface treatment process for making the contacthole forming region 88 lyophilic and making itssurroundings 90 liquid-repelling. As a result, theliquid mask material 82 can be prevented from outspreading to thesurroundings 90 of the contacthole forming region 88. Moreover, the wettability of the liquid mask material with respect to the contacthole forming region 88 is increased and the adhesiveness of the liquid mask material is increased, so that the supply amount of the liquid mask material to the contacthole forming region 88 can be increased. The liquid-repelling treatment for thesurroundings 90 may be performed by forming a liquid-repelling film such as a fluoroplastic on thesurroundings 90. - The present invention is not limited to the above embodiments, and various modifications can be applied within a scope which does not depart from the scope of the claims. For example, in the respective configurations of the above embodiments, parts can omitted or arbitrarily combined differently from as mentioned above.[0067]
Claims (27)
1. A method of forming a contact hole for electrically connecting a first conducting section and a second conducting section which are provided through an insulating film, said method comprising:
a mask forming step for providing a mask material on a contact hole forming region on said first conducting section;
an insulating film forming step for forming an insulating film on an entire surface of a substrate except for said mask material; and
a mask material removing step for removing said mask material and forming a through hole in said insulating film.
2. A method of forming a contact hole according toclaim 1 , wherein said mask forming step including:
a film forming step for forming a mask material film composed of said mask material over said entire surface of said substrate, and
a patterning step for removing unnecessary parts of said mask material film to leave said mask material film only in said contact hole forming region.
3. A method of forming a contact hole according toclaim 1 , wherein said mask forming step has:
a selective applying step for selectively supplying liquid material containing mask forming material to said contact hole forming region, and
a solidification step for solidifying said liquid material which has been applied.
4. A method of forming a contact hole according toclaim 3 , wherein said selective application step is performed by a droplet discharge method using a droplet ejecting device.
5. A method of forming a contact hole according toclaim 3 , wherein said mask forming step has a surface treatment step for making said contact hole forming region lyophilic and for making a region surrounding said contact hole forming region liquid repelling,
and said selective application step is performed after said surface treatment step.
6. A method of forming a contact hole according toclaim 3 , wherein said mask material comprises an organic material, and in said selective application step, organic liquid material is selectively supplied to said contact hole forming region, and in said solidification step said organic liquid material which has been applied is solidified.
7. A method of forming a contact hole according toclaim 2 , wherein
said mask material comprises an organic material,
said film forming step has an application step for applying liquid organic material, and a solidification step for solidifying said liquid organic material to form an organic film, and
said patterning step has an exposing step for exposing said organic film, and a developing step for developing said organic film which has been exposed.
8. A method of forming a contact hole according toclaim 6 , further comprising a curing step involving arranging said mask material which is provided on said contact hole forming region, under an atmosphere where oxygen and moisture do not substantially exist, and heating up said mask material to a predetermined temperature while irradiating ultraviolet rays onto said mask material.
9. A method of forming a contact hole according toclaim 6 , further comprising a curing step involving arranging said mask material which is provided on said contact hole forming region, under a reduced-pressure, and heating up said mask material to a predetermined temperature while irradiating ultraviolet rays onto said mask material.
10. A method of forming a contact hole according toclaim 8 , wherein said a curing step has a heat treatment step for heating up said mask material to said predetermined temperature or greater, after said irradiation of ultraviolet rays.
11. A method of forming a contact hole according toclaim 6 , wherein said mask material is subjected to a liquid-repelling treatment.
12. A method of forming contact holes according toclaim 2 , wherein said mask material comprises an inorganic material,
said film forming step forms said mask material film by forming inorganic material over the whole surface of said substrate, and
said patterning step patterns said mask material film comprising said inorganic material.
13. A method of forming contact holes according toclaim 2 , wherein said mask material comprises an inorganic material,
said film forming step involves forming said inorganic mask material film by depositing or sputtering said mask material over said substrate, and
said patterning step involves photoetching said mask material film.
14. A method of forming contact holes according toclaim 1 , wherein
said insulating film forming step has an insulating material application step for applying liquid insulating material over said substrate, and an insulating material solidification step for solidifying said liquid insulating material which has been applied.
15. A method of forming contact holes according toclaim 14 , wherein
said insulating material solidification step involves heating said liquid insulating material.
16. A method of forming contact holes according toclaim 1 , wherein said insulating film contains a first and second insulating film, and said method comprising:
a first mask material forming step for providing a first mask material on a contact hole forming region on said first conducting section;
a first insulating film forming step for forming a first insulating film over the entire surface of said substrate except for said first mask material;
a first mask material removing step for removing said first mask material and forming a first through hole in said first insulating film;
a second mask material forming step for providing a second mask material on the first through hole formed in said first insulating film;
a second insulating film forming step for forming a second insulating film on the entire surface of said first insulating film except for said second mask material; and
a second mask material removing step for removing said second mask material and forming a second through hole which is coaxial with said first through hole in said second insulating film.
17. A method of forming contact holes according toclaim 1 , wherein said insulating film forms a plurality of layers, and said method comprising:
a first mask material forming step for providing a first mask material in a contact hole forming region on said first conducting section;
a first insulating film forming step for forming a first insulating film over the entire surface of said substrate except for said first mask material;
a second mask material forming step for providing a second mask material on said first mask material;
a second insulating film forming step for forming a second insulating film on the whole surface of the first insulating film except for said second mask material; and
a mask material removing step for removing said first mask material and second mask material and forming a through hole in said first insulating film and second insulating film.
18. A manufacturing method for a thin film semiconductor device, for forming a thin film semiconductor device on a substrate, comprising:
a step for forming a semiconductor film containing a source and a drain region on said substrate;
a step for providing a first mask material on a contact plug forming region on said source and said drain region;
a step for applying liquid material onto said semiconductor film except for said contact plug forming region to form a gate insulating film;
a step for removing said first mask material;
a step for providing a second mask material including an opening, the opening being over said gate insulating film at a gate electrode forming region;
a step for forming a gate electrode by applying said liquid material to said gate electrode forming region which has been opened;
a step for removing said second mask material;
a step for providing a third mask material on the contact plug forming region in said source and said drain region and in a contact plug forming region of a gate electrode;
a step for forming an interlayer insulating film by applying liquid material onto said gate electrode and said gate insulating film except for said contact plug forming region;
a step for removing said third mask material; and
a step for forming a contact plug by applying liquid material to said contact plug forming region, after removing said third mask material.
19. A manufacturing method for a thin film semiconductor device according toclaim 18 , further comprising:
a step for providing a fourth mask material, where an electrode forming region is opened, on said interlayer insulating film and said contact plug; and
a step for forming an electrode by applying liquid material to said electrode forming region which has been opened.
20. A manufacturing method for a thin film semiconductor device, for forming a thin film semiconductor device on a substrate, comprising:
a step for forming a semiconductor film containing a source and a drain region on said substrate;
a step for providing a first mask material on a contact plug forming region on said source and said drain region;
a step for forming a gate insulating film by applying liquid material onto said semiconductor film except for said contact plug forming region;
a step for removing said first mask material;
a step for providing a second mask material including an opening, the opening being over said gate insulating film at a gate electrode forming region;
a step for forming a gate electrode by applying liquid material to said gate electrode forming region which has been opened;
a step for removing said second mask material;
a step for providing a third mask material on the contact plug forming region in said source and said drain region, and on a contact plug forming region in a gate electrode;
a step for forming an interlayer insulating film by applying liquid material onto said gate electrode and said gate insulating film except for said contact plug forming region,;
a step for removing said third mask material;
a step for providing a fourth mask material, where an electrode forming region is opened, on said interlayer insulating film, after removing said third mask material; and
a step for forming a contact plug and an electrode by applying liquid material to said contact plug forming region and said electrode forming region which has been opened.
21. A manufacturing method for a thin film semiconductor device, for forming a thin film semiconductor device on a substrate, comprising:
a step for forming a semiconductor film containing a source and a drain region on said substrate;
a step for providing a first mask material on a contact plug forming region on said source and said drain region;
a step for forming a gate insulating film by applying liquid material onto said semiconductor film except for said contact plug forming region;
a step for providing a second mask material including an opening, the opening being over said gate insulating film at a gate electrode forming region;
a step for forming a gate electrode by applying liquid material to said gate electrode forming region which has been opened;
a step for removing said second mask material;
a step for providing a third mask material on said first mask material and in a contact plug forming region of a gate electrode;
a step for forming an interlayer insulating film by applying liquid material onto said gate electrode and said gate insulating film except for said contact plug forming region;
a step for removing said first mask material and said third mask material; and
a step for forming a contact plug by applying liquid material onto said contact plug forming region, after removing said first mask material and said third mask material.
22. A manufacturing method for a thin film semiconductor device according toclaim 21 , further comprising:
a step for providing a fourth mask material, where an electrode forming region is opened, on said interlayer insulating film and said contact plugs; and
a step for forming an electrode by applying liquid material to said electrode forming region which has been opened.
23. A manufacturing method for a thin film semiconductor device, for forming a thin film semiconductor device on a substrate, comprising:
a step for forming a semiconductor film containing a source and a drain region on said substrate;
a step for providing a first mask material on a contact plug forming region on said source and said drain region;
a step for forming a gate insulating film by applying liquid material onto said semiconductor film except for said contact plug forming region;
a step for providing a second mask material including an opening, the opening being over said gate insulating film at a gate electrode forming region;
a step for forming a gate electrode by applying liquid material onto said gate electrode forming region which has been opened;
a step for removing said second mask material;
a step for providing a third mask material on said first mask material and a contact plug forming region of a gate electrode;
a step for forming an interlayer insulating film by applying liquid material onto said gate electrode and said gate insulating film except for said contact plug forming region;
a step for removing said third mask material;
a step for providing a fourth mask material where an electrode forming region is opened, on said interlayer insulating film and said contact plug, after removing said first mask material and said third mask material; and
a step for forming a contact plug and an electrode by applying liquid material onto said contact plug forming region and said electrode forming region which has been opened.
24. A manufacturing method for an electronic device which uses the method of forming a contact hole according toclaim 1 , comprising:
a step for filling a conductive material into the formed contact hole; and
a step for forming wiring of predetermined patterns on a filled conductive material.
25. A manufacturing method for an electronic device which uses the method of forming a contact hole according toclaim 1 , comprising: a step for forming wiring of a predetermined pattern on the insulating layer and the contact hole, while filling conductive material into the formed contact hole.
26. An electronic device having a contact hole formed by using the method of forming a contact hole according toclaim 1 .
27. An electronic device having a thin film semiconductor device formed by using the manufacturing method for a thin film semiconductor device according to any one ofclaim 18 throughclaim 23.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003072498 | 2003-03-17 | ||
| JP2003-072498 | 2003-03-17 | ||
| JP2004013228AJP2004304162A (en) | 2003-03-17 | 2004-01-21 | Contact hole forming method, thin film semiconductor device manufacturing method, electronic device manufacturing method, electronic device |
| JP2004-013228 | 2004-01-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20040242008A1true US20040242008A1 (en) | 2004-12-02 |
| US7179733B2 US7179733B2 (en) | 2007-02-20 |
Family
ID=33421757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/795,366Expired - Fee RelatedUS7179733B2 (en) | 2003-03-17 | 2004-03-09 | Method of forming contact holes and electronic device formed thereby |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7179733B2 (en) |
| JP (1) | JP2004304162A (en) |
| KR (1) | KR100606947B1 (en) |
| CN (1) | CN100380626C (en) |
| TW (1) | TWI232543B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060211187A1 (en)* | 2005-03-18 | 2006-09-21 | Kovio Inc. | MOS transistor with laser-patterned metal gate, and method for making the same |
| EP1846952A4 (en)* | 2005-02-10 | 2012-11-07 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| US20150240121A1 (en)* | 2014-02-27 | 2015-08-27 | Tokyo Electron Limited | Method for Improving Chemical Resistance of Polymerized Film, Polymerized Film Forming Method, Film Forming Apparatus, and Electronic Product Manufacturing Method |
| US20170068359A1 (en)* | 2015-09-08 | 2017-03-09 | Apple Inc. | Encapsulated Metal Nanowires |
| CN113655695A (en)* | 2021-09-02 | 2021-11-16 | 西华大学 | Composite photoetching alignment system and method based on medium microsphere super-resolution imaging |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3948472B2 (en)* | 2004-11-09 | 2007-07-25 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
| US7696625B2 (en)* | 2004-11-30 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2006184136A (en)* | 2004-12-28 | 2006-07-13 | Aitesu:Kk | Semiconductor analysis apparatus and method |
| JP2006261240A (en)* | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | Electronic device substrate, method for manufacturing electronic device substrate, display device, and electronic apparatus |
| JP5230145B2 (en)* | 2006-08-29 | 2013-07-10 | 株式会社半導体エネルギー研究所 | Method for manufacturing display device |
| US7736936B2 (en)* | 2006-08-29 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming display device that includes removing mask to form opening in insulating film |
| JP2008153354A (en)* | 2006-12-15 | 2008-07-03 | Sony Corp | Method for forming organic semiconductor pattern and method for manufacturing semiconductor device |
| JP5727204B2 (en) | 2009-12-11 | 2015-06-03 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5091962B2 (en)* | 2010-03-03 | 2012-12-05 | 株式会社東芝 | Semiconductor device |
| JP2012186455A (en)* | 2011-02-16 | 2012-09-27 | Ricoh Co Ltd | Hole formation method and multilayer interconnection, semiconductor device, display element, image display device, and system that form via holes using the method |
| TW201308616A (en)* | 2011-08-03 | 2013-02-16 | Motech Ind Inc | Method of forming conductive pattern on substrate |
| CN104022042B (en)* | 2014-06-10 | 2017-01-25 | 京东方科技集团股份有限公司 | Manufacturing method for low-temperature polycrystalline silicon thin film transistor and array substrate |
| KR102352232B1 (en)* | 2015-06-15 | 2022-01-17 | 삼성전자주식회사 | Method of fabricating semiconductor device having contact structures |
| KR101626536B1 (en)* | 2015-07-03 | 2016-06-01 | 페어차일드코리아반도체 주식회사 | Semiconductor package and method of manufacturing the same |
| KR102258317B1 (en)* | 2015-11-06 | 2021-06-01 | 삼성전자주식회사 | Semiconductor device and fabrication method thereof and method for forming contact hole |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4185294A (en)* | 1975-12-10 | 1980-01-22 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device and a method for manufacturing the same |
| US5032528A (en)* | 1989-08-10 | 1991-07-16 | Kabushiki Kaisha Toshiba | Method of forming a contact hole in semiconductor integrated circuit |
| US5219787A (en)* | 1990-07-23 | 1993-06-15 | Microelectronics And Computer Technology Corporation | Trenching techniques for forming channels, vias and components in substrates |
| US5723381A (en)* | 1995-09-27 | 1998-03-03 | Siemens Aktiengesellschaft | Formation of self-aligned overlapping bitline contacts with sacrificial polysilicon fill-in stud |
| US6010955A (en)* | 1996-09-23 | 2000-01-04 | Kabushiki Kaisha Toshiba | Electrical connection forming process for semiconductor devices |
| US20020045311A1 (en)* | 2000-10-17 | 2002-04-18 | Takumi Mikawa | Ferroelectric memory and method for manufacturing the same |
| US20020043889A1 (en)* | 2001-01-26 | 2002-04-18 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device and production method thereof |
| US20020063340A1 (en)* | 2000-11-29 | 2002-05-30 | Ryuichi Sahara | Semiconductor device and method for producing the same |
| US20030109126A1 (en)* | 2000-08-15 | 2003-06-12 | Tsuneo Terasawa | Method of producing semiconductor integrated circuit device and method of producing multi-chip module |
| US20040031962A1 (en)* | 1999-12-27 | 2004-02-19 | Sanyo Electric Co., Ltd. | Display unit and method of fabricating the same |
| US20040082195A1 (en)* | 2002-04-22 | 2004-04-29 | Seiko Epson Corporation | Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment |
| US20040147066A1 (en)* | 2003-01-17 | 2004-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing resist pattern and method for manufacturing semiconductor device |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0290653A (en) | 1988-09-28 | 1990-03-30 | Nec Corp | Manufacture of multilayer interconnection semiconductor device |
| JPH03136245A (en) | 1989-10-21 | 1991-06-11 | Sony Corp | Manufacture of semiconductor device |
| JPH07120516B2 (en) | 1990-07-26 | 1995-12-20 | 株式会社東芝 | Low energy electron irradiation method and irradiation device |
| KR950010853B1 (en)* | 1992-10-13 | 1995-09-25 | 금성일렉트론주식회사 | Reverse contact manufacturing method of semiconductor device |
| JP2968146B2 (en)* | 1993-04-02 | 1999-10-25 | シャープ株式会社 | Electrode manufacturing method |
| JPH07122637A (en) | 1993-10-25 | 1995-05-12 | Matsushita Electric Ind Co Ltd | Method for manufacturing semiconductor device |
| JPH07122638A (en) | 1993-10-26 | 1995-05-12 | Fujitsu Ltd | Method for manufacturing semiconductor device |
| JPH07161711A (en) | 1993-12-10 | 1995-06-23 | Hitachi Ltd | Pattern formation method |
| JPH08124840A (en) | 1994-10-20 | 1996-05-17 | Shimada Phys & Chem Ind Co Ltd | Liquid resin film formation method |
| KR0179289B1 (en)* | 1996-04-12 | 1999-04-15 | 문정환 | Metal wiring formation method |
| JPH09312336A (en) | 1996-05-20 | 1997-12-02 | Yamaha Corp | Connection hole formation method |
| JPH10112499A (en) | 1996-08-12 | 1998-04-28 | Sony Corp | Formation method for metallic plug and/or metallic wiring |
| US6010954A (en)* | 1997-07-11 | 2000-01-04 | Chartered Semiconductor Manufacturing, Ltd. | Cmos gate architecture for integration of salicide process in sub 0.1 . .muM devices |
| TW360949B (en) | 1997-12-19 | 1999-06-11 | United Microelectronics Corp | Dual damascene process |
| JP3080073B2 (en) | 1998-06-16 | 2000-08-21 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| JP2000269336A (en) | 1999-03-19 | 2000-09-29 | Toshiba Corp | Semiconductor device and method of manufacturing semiconductor device |
| JP3715502B2 (en)* | 2000-03-14 | 2005-11-09 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| US6734029B2 (en) | 2000-06-30 | 2004-05-11 | Seiko Epson Corporation | Method for forming conductive film pattern, and electro-optical device and electronic apparatus |
- 2004
- 2004-01-21JPJP2004013228Apatent/JP2004304162A/ennot_activeWithdrawn
- 2004-03-08KRKR1020040015390Apatent/KR100606947B1/ennot_activeExpired - Fee Related
- 2004-03-09USUS10/795,366patent/US7179733B2/ennot_activeExpired - Fee Related
- 2004-03-12TWTW093106725Apatent/TWI232543B/ennot_activeIP Right Cessation
- 2004-03-12CNCNB2004100396490Apatent/CN100380626C/ennot_activeExpired - Fee Related
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4185294A (en)* | 1975-12-10 | 1980-01-22 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device and a method for manufacturing the same |
| US5032528A (en)* | 1989-08-10 | 1991-07-16 | Kabushiki Kaisha Toshiba | Method of forming a contact hole in semiconductor integrated circuit |
| US5219787A (en)* | 1990-07-23 | 1993-06-15 | Microelectronics And Computer Technology Corporation | Trenching techniques for forming channels, vias and components in substrates |
| US5723381A (en)* | 1995-09-27 | 1998-03-03 | Siemens Aktiengesellschaft | Formation of self-aligned overlapping bitline contacts with sacrificial polysilicon fill-in stud |
| US6010955A (en)* | 1996-09-23 | 2000-01-04 | Kabushiki Kaisha Toshiba | Electrical connection forming process for semiconductor devices |
| US20040031962A1 (en)* | 1999-12-27 | 2004-02-19 | Sanyo Electric Co., Ltd. | Display unit and method of fabricating the same |
| US20030109126A1 (en)* | 2000-08-15 | 2003-06-12 | Tsuneo Terasawa | Method of producing semiconductor integrated circuit device and method of producing multi-chip module |
| US20020045311A1 (en)* | 2000-10-17 | 2002-04-18 | Takumi Mikawa | Ferroelectric memory and method for manufacturing the same |
| US20020063340A1 (en)* | 2000-11-29 | 2002-05-30 | Ryuichi Sahara | Semiconductor device and method for producing the same |
| US20020043889A1 (en)* | 2001-01-26 | 2002-04-18 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device and production method thereof |
| US20040082195A1 (en)* | 2002-04-22 | 2004-04-29 | Seiko Epson Corporation | Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment |
| US20040147066A1 (en)* | 2003-01-17 | 2004-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing resist pattern and method for manufacturing semiconductor device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1846952A4 (en)* | 2005-02-10 | 2012-11-07 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| US20060211187A1 (en)* | 2005-03-18 | 2006-09-21 | Kovio Inc. | MOS transistor with laser-patterned metal gate, and method for making the same |
| US8461628B2 (en) | 2005-03-18 | 2013-06-11 | Kovio, Inc. | MOS transistor with laser-patterned metal gate, and method for making the same |
| US20150240121A1 (en)* | 2014-02-27 | 2015-08-27 | Tokyo Electron Limited | Method for Improving Chemical Resistance of Polymerized Film, Polymerized Film Forming Method, Film Forming Apparatus, and Electronic Product Manufacturing Method |
| US9708507B2 (en)* | 2014-02-27 | 2017-07-18 | Tokyo Electron Limited | Method for improving chemical resistance of polymerized film, polymerized film forming method, film forming apparatus, and electronic product manufacturing method |
| US20170068359A1 (en)* | 2015-09-08 | 2017-03-09 | Apple Inc. | Encapsulated Metal Nanowires |
| CN113655695A (en)* | 2021-09-02 | 2021-11-16 | 西华大学 | Composite photoetching alignment system and method based on medium microsphere super-resolution imaging |
Also Published As
| Publication number | Publication date |
|---|---|
| US7179733B2 (en) | 2007-02-20 |
| KR20040082280A (en) | 2004-09-24 |
| TW200425405A (en) | 2004-11-16 |
| TWI232543B (en) | 2005-05-11 |
| CN1531061A (en) | 2004-09-22 |
| CN100380626C (en) | 2008-04-09 |
| JP2004304162A (en) | 2004-10-28 |
| KR100606947B1 (en) | 2006-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7179733B2 (en) | Method of forming contact holes and electronic device formed thereby | |
| US6898851B2 (en) | Electronic device manufacturing method | |
| KR100311755B1 (en) | Semiconductor device and method for manufacturing the semiconductor device | |
| JP2012156543A (en) | Formation of self-aligned via holes in polymer thin films | |
| TWI237848B (en) | Method of forming multilayer interconnection structure, method of manufacturing circuit board, and method of manufacturing device | |
| JP4281584B2 (en) | Manufacturing method of semiconductor device | |
| US20080194056A1 (en) | Method of Producing Plurality of Organic Transistors Using Laser Patterning | |
| US7375774B2 (en) | Method of manufacturing semiconductor device | |
| KR100650535B1 (en) | Method of forming mutilayer interconnection structure, and manufacturing method for multilayer wiring boards | |
| JP2005236186A (en) | Semiconductor device, manufacturing method thereof, and electronic apparatus | |
| KR100704253B1 (en) | Method for manufacturing transistors, electro-optical devices and electronic devices | |
| JP4617642B2 (en) | Wiring board manufacturing method and electro-optical device manufacturing method | |
| JP2005118660A (en) | Liquid repellent region forming method, pattern forming method, and electronic device | |
| KR20070069057A (en) | Method for manufacturing semiconductor device, semiconductor device and electronic device | |
| US20250183137A1 (en) | Semiconductor structures including wire-bond pads and flip-chip bumps and method of making the same | |
| JP2005032759A (en) | Multilayer wiring formation method, wiring board manufacturing method, device manufacturing method | |
| US12025914B2 (en) | Silver patterning and interconnect processes | |
| KR100613384B1 (en) | Wiring Formation Method of Semiconductor Device | |
| JP2005236187A (en) | Semiconductor device manufacturing method, electronic device | |
| US20200091449A1 (en) | Forming dielectric for electronic devices | |
| KR100571389B1 (en) | Manufacturing Method of Semiconductor Device | |
| JP2004241642A (en) | Manufacturing method of semiconductor device | |
| KR20110072114A (en) | Method for manufacturing a semiconductor device having a contact structure | |
| Tanaka | 15s 13g | |
| KR19980052423A (en) | Semiconductor device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment | Owner name:SEIKO EPSON CORPORATION, JAPAN Free format text:ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SATO, MITSURU;YUDASAKA, ICHIO;REEL/FRAME:014893/0058;SIGNING DATES FROM 20040625 TO 20040701 | |
| FEPP | Fee payment procedure | Free format text:PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY | |
| FPAY | Fee payment | Year of fee payment:4 | |
| FPAY | Fee payment | Year of fee payment:8 | |
| FEPP | Fee payment procedure | Free format text:MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY | |
| LAPS | Lapse for failure to pay maintenance fees | Free format text:PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY | |
| STCH | Information on status: patent discontinuation | Free format text:PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 | |
| FP | Lapsed due to failure to pay maintenance fee | Effective date:20190220 |