US20040229459A1 - Integration of annealing capability into metal deposition or CMP tool - Google Patents

Abstract

Integration of annealing capability into a metal deposition tool or a chemical mechanical polishing (CMP) tool. A wafer processing apparatus includes a metal deposition tool having annealing capability. The metal deposition tool can be an electroplating tool or a chemical vapor deposition tool or other metal deposition tool that deposits metal films, such as copper, onto silicon substrates for integrated circuit manufacturing. An annealing chamber is integrated into the metal deposition tool so that annealing of the metal film can be controlled such that the copper is consistently stabilized in preparation for a chemical mechanical polishing process. Alternatively, an annealing chamber can be integrated into a CMP tool.

Description

FIELD OF THE INVENTION
• The present invention relates generally to semiconductor manufacturing and, in particular, to the integration of annealing capability into metal deposition tools or chemical mechanical polishing tools.[0001]
BACKGROUND OF THE INVENTION
• In integrated circuit manufacturing processes, it is generally desirable to minimize the total number of steps in the process and the time between each step. While it is generally desirable to allow the greatest latitude in fabrication process parameters, in certain cases, known variations can be eliminated or controlled to an extent that provides a greater predictability of results of the process. One such variation occurs during the stabilization of metal films that are deposited on a wafer dielectric layer to form interconnects between active devices.[0002]
• Integrated circuits (ICs) manufactured today generally include an elaborate system of metalized interconnects to couple the various devices that have been fabricated in the semiconductor substrate. The technology for forming these metalized interconnects is extremely sophisticated. Commonly, aluminum, copper or some other metal is deposited on a dielectric layer and then patterned to form interconnect paths. Another dielectric or insulation layer such as silicon dioxide (SiO[0003]₂) is then deposited over this first metal layer (metal1); via openings are etched through the dielectric layer; and the second metal layer (metal2) is deposited. The metal2 layer covers the dielectric layer and fills the via openings, making electrical contact down to the metal layer. After a metal layer is deposited, the layer is usually planarized in a chemical mechanical polishing (CMP) process to remove the portions of the metal layer that do not form the desired interconnects such as lines or vias.
• A considerable amount of effort in the manufacturing of modern complex, high density, multilevel interconnections is devoted to the planarization of the individual layers of the interconnection structure. Nonplanar surfaces create poor optical resolution of subsequent photolithographic processing steps. Poor optical resolution prohibits the printing of high density lines. Another problem with nonplanar surface topography is the step coverage of subsequent metalization layers. If a step height is too large there is a serious danger that open circuits will be created. Planar interconnect surface layers are a must in the fabrication of modern high density multilevel integrated circuits.[0004]
• CMP employs polishing to remove protruding steps formed along the upper surface of the inter-layer dielectric. CMP is also used to “etch back” deposited metal layers to form planar plugs or vias. In a typical CMP process, a silicon substrate or wafer is placed face down on a rotating table or platform covered with a flat polishing pad that has been coated with an active slurry. A carrier, which is typically made of a thick, nonflexible metal plate, is used to apply a downward force against the backside of the substrate. The downward force and the rotational movement of the pad together with the slurry facilitate the abrasive polishing and planar removing of the upper surface of the thin metal film.[0005]
• Nonuniform polishing can result in too much film being removed from some parts of the wafer and not enough film being removed from other parts. Also, lack of uniformity in the polishing rate from wafer to wafer can result in decreased process yield and reliability. Significant effort has been expended in attempts to control the polishing part of the process of integrated circuit manufacturing.[0006]
• Electroplating is becoming the favored technique at least for copper deposition in the semiconductor industry. Electroplated copper, however, is known to be unstable at room temperature. Its physical properties such as resistivity and hardness continue to change with time. This process can last for weeks and can have significant impact on the stability of the subsequent process steps such as CMP. Annealing can accelerate the stabilization of the copper film, but adds an additional step in the process flow. Also, when annealing is performed by a separate annealing tool, the time between the deposition of the copper or metal layer can vary due to any number of reasons, such as unavailability of the annealing tools, imprecise scheduling or a physical distance between the annealing tool and the CMP tool.[0007]
• Changes in the resistivity and hardness of the metal that has been deposited can affect the rate of polishing during the CMP portion of the process. It is desirable to minimize the variability of the stabilization of the metal. Annealing helps to stop the degradation or change in the properties of the metal. If the deposited metal is stabilized consistently, greater predictability can be achieved in the CMP process.[0008]
SUMMARY OF THE INVENTION
• In one embodiment, an apparatus includes a metal deposition tool having annealing capability.[0009]
BRIEF DESCRIPTION OF THE DRAWINGS
• The present invention is illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:[0010]
• FIG. 1 is a schematic representation of a prior art wafer processing apparatus;[0011]
• FIG. 2 is a schematic representation of an embodiment of a wafer processing apparatus;[0012]
• FIG. 3 is another embodiment of a wafer processing apparatus;[0013]
• FIG. 4 is yet another embodiment of a wafer processing apparatus;[0014]
• FIG. 5 is a top plan view of one embodiment of a wafer processing apparatus; and[0015]
• FIG. 6 is a top plan view of another embodiment of a wafer processing apparatus.[0016]
DETAILED DESCRIPTION
• A wafer processing apparatus including a metal deposition tool having annealing capability is described. Examples of metal deposition tools are electroplating tools or chemical vapor deposition (CVD) tools. The integration of annealing capability into a metal deposition tool can result in better control over the stabilization of the metal prior to a subsequent process such as chemical mechanical polishing (CMP). Alternatively, annealing capability can be integrated into the CMP tool.[0017]
• FIG. 1 is a schematic representation of a[0018]wafer processing apparatus100 of the prior art.Electroplating tool110 includes at least one, and usually a plurality, ofelectroplating chambers112. A wafer is processed throughwafer processing apparatus100 by first having a metal such as copper deposited onto a dielectric layer of the silicon substrate in one of theelectroplating chambers112. Typically, a batch or a plurality of wafers is processed in theelectroplating tool110 at the same time.
• After electroplating, the wafer is moved to an[0019]annealing tool130 that includes anannealing chamber132. Annealing chambers can typically be a furnace that heats the wafer including the metal deposited on it by the electroplating process. The annealing process is performed in order to stabilize the electroplated or otherwise deposited metal. The annealing is typically done in preparation for the CMP process during which a portion of the metal is polished away. If the metal film is not stable, however, the polishing rate of the CMP process can be unpredictable. For example, because the hardness of the metal film can vary from wafer to wafer, it can be very difficult to determine how much polishing is adequate.
• After the-annealing process, the wafer is transferred to a[0020]CMP tool120. As shown in FIG. 1,CMP tool120 can include a plurality ofCMP platforms122. CMP platforms are typically rotating tables that include a rotating pad on which the wafer rests during polishing.
• Currently, copper is becoming a preferred metal for use in electroplating interconnects on silicon wafers. Other metals such as gold or silver can also be deposited by electroplating. In the past, the electroplating of copper was used mostly for decorative purposes. As such, the stability of the copper film was not a concern.[0021]
• The resistivity of the copper film can be measured in an attempt to determine whether and to what extent the microstructure of the copper film has changed. Measuring the resistivity can indicate whether the microstructure, for example the grain size or crystal orientation, of the copper has changed. Directly measuring grain size or crystal orientation requires destructive tests that are not easily performed in a manufacturing setting.[0022]
• It is desirable to make the wafer manufacturing process more efficient by eliminating any potential causes of change. For instance, since electroplated copper is unstable at room temperature, its properties tend to change over time. The change in the properties such as hardness or resistivity increases the variability of the polishing rate during CMP because the copper film is not at the same level of hardness, for example, every time for every wafer when polishing begins. It is desirable to stabilize the film by annealing before CMP. If the annealing is not performed shortly after the copper has been deposited by either electroplating or chemical vapor deposition (CVD), however, there is unpredictability in the properties of the copper film because of the lapse of time between the metal deposition process and annealing. During the time that has elapsed between these two steps, the copper film tends to change. If the annealing is not performed consistently, it is difficult to predict the rate of polishing that is necessary to achieve the desired results.[0023]
• During electroplating, the wafer is placed into a solution containing sulfuric acid and other additives that may include metal particles such as copper. The electroplating tank has a cathode and an anode dipped into the solution. The anode can be made of copper. During the electroplating process, metal particles within the solution (or from the anode as it dissolves) are deposited on the surface of a dielectric layer of the silicon substrate. The copper particles fill small features such as holes, lines or trenches that have been formed in the dielectric layers on the substrate. After the copper is deposited, CMP is performed to remove the copper that is not needed down to a pre-selected plane leaving interconnects between different devices on the substrate.[0024]
• When copper film is deposited by electroplating or CVD, there can be outgassing for a period of time. Annealing can stabilize outgassing. During the annealing process, the metal deposited by electroplating or CVD is heated to temperatures of 50 to 400 degrees Celsius. Typically, about 200 degrees Celsius is the temperature at which annealing is performed. The time for annealing can vary from about 1 to about 60 minutes depending on the temperature used. Typically, the higher the temperature, the shorter the time necessary to achieve stabilization of the metal by annealing.[0025]
• FIG. 2 shows one embodiment in which a[0026]wafer processing apparatus200 includes a metal deposition tool and a CMP tool. The metal deposition tool shown in FIG. 2 is anelectroplating tool210 that hasmultiple electroplating chambers212. FIG. 2 shows a schematic representation of anannealing chamber232 on theelectroplating tool210.
• Annealing[0027]chamber232 can be attached to or added ontoelectroplating tool210 Alternatively,electroplating tool210 can be modified such that one of its plurality ofelectroplating chambers212 is replaced by annealingchamber232. More than oneannealing chamber232 can also be provided.Annealing chamber232 can be a furnace (not shown) or can include heat lamps (not shown) or a hot stage (not shown).
• [0028]CMP tool220 is shown in FIG. 2 as havingmultiple CMP platforms222. Alternatively,multiple CMP tools220 can be provided forapparatus200 or asingle CMP tool220 can provide asingle CMP platform222.
• FIG. 3 shows another embodiment in which a wafer processing apparatus includes a metal deposition tool that is a chemical vapor deposition (CVD)[0029]tool340. Also,apparatus300 includes aCMP tool320.
• [0030]CVD tool340 includesmultiple CVD chambers342.Annealing chamber332 is provided onCVD tool340.Annealing chamber332 can be attached to-or can replace aCVD chamber342 ofCVD tool340. A wafer being processed will have a metal such as copper deposited by CVD in one of theCVD chambers342. After the metal deposition process, the wafer is moved to annealingchamber332, which is provided onCVD tool340. Because annealingchamber332 is integrated intoCVD tool340, the annealing process can begin almost immediately to avoid the degradation of the deposited metal. After the wafer has undergone annealing in theannealing chamber332, it is transferred to theCMP tool320 and onto one of theCMP platforms322.
• FIG. 4 shows yet another embodiment in which a[0031]wafer processing apparatus400 includes ametal deposition tool460 and aCMP tool420. In the embodiment shown in FIG. 4,metal deposition tool460 includesmetal deposition chambers462.Metal deposition tool460 can be an electroplating tool or a CVD tool, for example. Also, a metal deposition tool need not have multiplemetal deposition chambers462.Annealing chamber432 is integrated into theCMP tool420 in the embodiment illustrated in FIG. 4.CMP tool420 includesCMP platforms422. During processing, the wafer is transferred frommetal deposition tool460 intoannealing chamber432, which is onCMP tool420 in this embodiment. After annealing inannealing chamber432, the wafer is transferred almost immediately to aCMP platform422 to undergo the CMP process. In this case, the amount of time between the end of the annealing process and the beginning of the CMP process can be controlled.
• Alternatively, annealing can be performed after CMP to influence the final properties of the metal. The[0032]apparatus400 of FIG. 4 can also provide this capability. Annealing before CMP can influence the microstructure of the metal layer quite differently than annealing after CMP because more metal is present before CMP. Annealing can cause the grain to grow differently due to the presence of more or less material.
• FIG. 5 shows an embodiment in which a[0033]wafer processing apparatus500 includes ametal deposition tool560 and arobot550 on themetal deposition tool560.Metal deposition tool560 includes a plurality ofmetal deposition chambers562. As described above,metal deposition tool560 can be an electroplating tool or a CVD tool, or any other type of tool that deposits metal onto the dielectric layer of a silicon substrate in the manufacture of integrated circuit devices.
• [0034]Robot550 moves awafer502 from ametal deposition chamber562 to anannealing chamber532.Annealing chamber532 is shown onmetal deposition tool560. FIG. 5 illustrates an embodiment in whichannealing chamber532 can be provided as part ofmetal deposition tool560 ormetal deposition tool560 can be modified such thatannealing chamber532 replaces ametal deposition chamber562.
• Alternatively,[0035]wafer processing apparatus500 can include an annealing chamber that is on a CMP tool. In this case,robot550 would move thewafer502 from theannealing chamber532 into a CMP chamber or vice versa. It is preferred that annealing be performed before CMP in order to stabilize the metal that was deposited onto the wafer, thus providing more predictability in the CMP process. Alternatively, annealing can be performed after CMP to influence the final properties of the metal.
• FIG. 6 shows an embodiment in which[0036]wafer processing apparatus600 includes a metal deposition tool660 (or, alternatively, a CMP tool) and anannealing chamber632 attached to the side ofmetal deposition tool660. In FIG. 6,metal deposition tool660 includes a plurality ofmetal deposition chambers662.Annealing chamber632 can be provided adjacent tometal deposition tool660 and itsmetal deposition chambers662.Robot650 is also provided to movewafer602 betweenmetal deposition chambers662 andannealing chamber632.
• An embodiment of a wafer processing method includes depositing a metal onto a substrate such as a wafer in a metal deposition chamber of a metal deposition tool. The substrate is then moved from the metal deposition chamber directly to an annealing chamber. Preferably, the annealing chamber is part of the metal deposition tool. The annealing process includes heating the metal in the annealing chamber. The method can include a metal deposition tool that is an electroplating tool having at least one electroplating chamber. The method alternatively can include a metal deposition tool that is a chemical vapor deposition (CVD) tool having at least one CVD chamber. Preferably, the method includes annealing or heating the wafer including the deposited metal before chemical mechanical processing (CMP) of the substrate is performed.[0037]
• Alternatively, a wafer processing method can include depositing a metal onto a substrate in a metal deposition chamber of a metal deposition tool, moving the substrate from the metal deposition tool to an annealing chamber that is part of a chemical mechanical polishing (CMP) tool, heating the metal in the annealing chamber, moving the substrate from the annealing chamber to a CMP platform on the CMP tool and polishing the substrate including the metal after annealing.[0038]
• Yet another alternative embodiment of a wafer processing method can include depositing a metal onto a substrate in a metal deposition chamber of a metal deposition tool; moving the substrate from the metal deposition tool to a chemical mechanical polishing (CMP) platform on a CMP tool; polishing the substrate including the metal; moving the substrate from the CMP platform to an annealing chamber, wherein the annealing chamber is part of the CMP tool; and heating the metal in the annealing chamber. In this case, annealing can be performed after CMP.[0039]
• Yet another alternative embodiment can include annealing before and after CMP. This embodiment can include an annealing-chamber on both the metal deposition tool and on the CMP tool of a wafer processing apparatus.[0040]

Claims (21)

1. An apparatus comprising:

a metal deposition tool having annealing capability.

2. The apparatus ofclaim 1 further comprising an annealing chamber on said metal deposition tool.

3. The apparatus ofclaim 2 wherein said metal deposition tool is an electroplating tool.

4. The apparatus ofclaim 2 wherein said metal deposition tool is a chemical vapor deposition (CVD) tool.

5. The apparatus ofclaim 1 wherein said metal deposition tool has a plurality of metal deposition chambers, said metal deposition tool being modified to replace one of said metal deposition chambers with an annealing chamber.

6. The apparatus ofclaim 5 wherein said metal deposition tool is an electroplating tool and said metal deposition chamber is an electroplating chamber.

7. The apparatus ofclaim 5 wherein said metal deposition tool is a chemical vapor deposition (CVD) tool and said metal deposition chamber is a chemical vapor deposition (CVD) chamber.

8. The apparatus ofclaim 1 wherein said metal deposition tool includes at least one metal deposition chamber and an annealing chamber on said metal deposition tool.

9. The apparatus ofclaim 8 wherein said metal deposition tool is an electroplating tool and said metal deposition chamber is an electroplating chamber.

10. The apparatus ofclaim 8 wherein said metal deposition tool is a chemical vapor deposition (CVD) tool and said metal deposition chamber is a chemical vapor deposition (CVD) chamber.

11. The apparatus ofclaim 8 wherein said annealing chamber includes heat lamps.

12. The apparatus ofclaim 8 wherein said annealing chamber is a furnace.

13. The apparatus ofclaim 8 further comprising a robot, wherein said robot moves a wafer from said metal deposition chamber to said annealing chamber.

14. An apparatus comprising:

an chemical mechanical polishing (CMP) tool having annealing capability.

15. The apparatus ofclaim 14 further comprising an annealing chamber on said CMP tool.

16. The apparatus ofclaim 14 wherein said CMP tool has a plurality of CMP platforms, said CMP tool being modified to replace one of said CMP platforms with an annealing chamber.

17. The apparatus ofclaim 14 wherein said CMP tool includes at least one CMP platform and an annealing chamber on said CMP tool.

18. The apparatus ofclaim 14 wherein said annealing chamber includes heat lamps.

19. The apparatus ofclaim 14 wherein said annealing chamber is a furnace.

20. The apparatus ofclaim 14 further comprising a robot, wherein said robot moves a wafer from said annealing chamber to said CMP platform.

21.-30. (Cancelled)

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