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US20040229404A1 - Semiconductor encapsulant resin having an additive with a gradient concentration - Google Patents

Semiconductor encapsulant resin having an additive with a gradient concentration
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Publication number
US20040229404A1
US20040229404A1US10/878,607US87860704AUS2004229404A1US 20040229404 A1US20040229404 A1US 20040229404A1US 87860704 AUS87860704 AUS 87860704AUS 2004229404 A1US2004229404 A1US 2004229404A1
Authority
US
United States
Prior art keywords
encapsulant resin
additive
encapsulant
resin
resin member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/878,607
Inventor
Shigeo Kiso
Ichiro Kataoka
Satoru Yamada
Hidenori Shiotsuka
Hideaki Zenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon IncfiledCriticalCanon Inc
Priority to US10/878,607priorityCriticalpatent/US20040229404A1/en
Publication of US20040229404A1publicationCriticalpatent/US20040229404A1/en
Abandonedlegal-statusCriticalCurrent

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Abstract

Provided is an encapsulant resin for a semiconductor that effectively functions even with a relatively small amount of an additive.
The encapsulant resin for a semiconductor is characterized in that the additive has a concentration gradient in the direction of thickness of the encapsulant resin. Specifically, the concentration gradient of the additive is established in the direction of thickness of the encapsulant resin by stacking at least two types of organic polymer resins containing different contents of the additive to form the encapsulant resin or by applying an electric field to the encapsulant resin to effect electrophoresis of the polar additive in the encapsulant resin.

Description

Claims (20)

US10/878,6071998-02-272004-06-29Semiconductor encapsulant resin having an additive with a gradient concentrationAbandonedUS20040229404A1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
US10/878,607US20040229404A1 (en)1998-02-272004-06-29Semiconductor encapsulant resin having an additive with a gradient concentration

Applications Claiming Priority (6)

Application NumberPriority DateFiling DateTitle
JP10-0470011998-02-27
JP47001981998-02-27
JP11-0429121999-02-22
JP11042912AJPH11317475A (en)1998-02-271999-02-22 Semiconductor encapsulant resin and semiconductor element
US09/256,227US6762508B1 (en)1998-02-271999-02-24Semiconductor encapsulant resin having an additive with a gradient concentration
US10/878,607US20040229404A1 (en)1998-02-272004-06-29Semiconductor encapsulant resin having an additive with a gradient concentration

Related Parent Applications (1)

Application NumberTitlePriority DateFiling Date
US09/256,227DivisionUS6762508B1 (en)1998-02-271999-02-24Semiconductor encapsulant resin having an additive with a gradient concentration

Publications (1)

Publication NumberPublication Date
US20040229404A1true US20040229404A1 (en)2004-11-18

Family

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Family Applications (2)

Application NumberTitlePriority DateFiling Date
US09/256,227Expired - Fee RelatedUS6762508B1 (en)1998-02-271999-02-24Semiconductor encapsulant resin having an additive with a gradient concentration
US10/878,607AbandonedUS20040229404A1 (en)1998-02-272004-06-29Semiconductor encapsulant resin having an additive with a gradient concentration

Family Applications Before (1)

Application NumberTitlePriority DateFiling Date
US09/256,227Expired - Fee RelatedUS6762508B1 (en)1998-02-271999-02-24Semiconductor encapsulant resin having an additive with a gradient concentration

Country Status (4)

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US (2)US6762508B1 (en)
EP (1)EP0939441A3 (en)
JP (1)JPH11317475A (en)
CN (1)CN1185705C (en)

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JP2012160691A (en)*2011-01-142012-08-23Sumitomo Electric Ind LtdLight receiving device, optical device and method of manufacturing light receiving device
FR2971625B1 (en)*2011-02-112013-02-15Arkema France ENCAPSULATING A PHOTOVOLTAIC MODULE
KR20140027149A (en)*2011-04-142014-03-06미쓰이 가가쿠 토세로 가부시키가이샤Resin sheet for sealing solar cell, solar cell module using same, and method for manufacturing solar cell module
JP2013122984A (en)2011-12-122013-06-20Canon IncSemiconductor device manufacturing method
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CN104170097A (en)2012-03-272014-11-26希爱化成株式会社Solar cell module sealing film, and solar cell module using same
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JP5806373B2 (en)*2014-08-272015-11-10株式会社ブリヂストン Solar cell sealing film and solar cell using the same
TWI626164B (en)2015-02-042018-06-11Lg化學股份有限公司 Encapsulation film
KR20180021094A (en)2015-06-252018-02-28쓰리엠 이노베이티브 프로퍼티즈 캄파니 Copolymers containing UV-absorbers and compositions comprising them
JP6613451B2 (en)*2015-10-022019-12-04パナソニックIpマネジメント株式会社 Solar cell module
DE102016109356A1 (en)*2016-05-202017-11-23Infineon Technologies Ag CHIP HOUSING AND METHOD FOR MAKING A CHIP HOUSE
FR3071357B1 (en)*2017-09-202019-11-22Total Sa FLEXIBLE LAMINATE OF PHOTOVOLTAIC CELLS AND METHOD THEREOF
JP2020010070A (en)*2019-10-182020-01-16パナソニックIpマネジメント株式会社 Solar cell module and method for manufacturing solar cell module
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Cited By (48)

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US20110189807A1 (en)*2002-10-252011-08-04Nakajima Glass Co., Inc.Solar battery module manufacturing method
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US10079330B2 (en)2008-07-102018-09-18Semiconductor Energy Laboratory Co., Ltd.Light emitting device and electronic device having an embedded pixel electrode
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US8169588B2 (en)2008-07-102012-05-01Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and method for manufacturing the same
US8284369B2 (en)2008-08-202012-10-09Semiconductor Energy Laboratory Co., Ltd.Flexible light-emitting device, and method for fabricating the same
US9177978B2 (en)2008-09-182015-11-03Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US10020296B2 (en)2008-09-182018-07-10Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US20100065952A1 (en)*2008-09-182010-03-18Semiconductor Energy Laboratory Co., Ltd.Semiconductor Device
US11127732B2 (en)2008-09-182021-09-21Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8957423B2 (en)2008-09-192015-02-17Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US20100072548A1 (en)*2008-09-192010-03-25Semiconductor Energy Laboratory Co., Ltd.Semiconductor Device and Method for Manufacturing the Same
US8552498B2 (en)2008-09-192013-10-08Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US9196593B2 (en)2008-10-012015-11-24Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US9397247B2 (en)2009-12-112016-07-19Adeka CorporationSealing film for solar battery
CN102687283A (en)*2009-12-112012-09-19株式会社AdekaSealing film for solar cell
CN102687283B (en)*2009-12-112015-04-01株式会社AdekaSealing film for solar cell
US9196774B2 (en)2012-02-162015-11-24Panasonic Intellectual Property Management Co., Ltd.Solar module and method for manufacturing the same
US20140360583A1 (en)*2012-03-092014-12-11Sanyo Electric Co., Ltd.Solar module and method of manufacturing the same
WO2015021098A1 (en)*2013-08-062015-02-123M Innovative Properties CompanyEncapsulation material for solar cell and module
CN105474407A (en)*2013-08-142016-04-06太阳能公司Solar cell module with high electric susceptibility layer

Also Published As

Publication numberPublication date
EP0939441A2 (en)1999-09-01
JPH11317475A (en)1999-11-16
US6762508B1 (en)2004-07-13
EP0939441A3 (en)2000-09-20
CN1185705C (en)2005-01-19
CN1228614A (en)1999-09-15

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