US20040211664A1 - Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces - Google Patents

Abstract

A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer for processing. The spring member is disposed on the bottom section and configured to apply an electric charge to the wafer. In accordance with another aspect of the present invention, the spring member contacts a portion of the outer perimeter of the wafer. In one alternative configuration of the present invention, the wafer chuck further includes a seal member to seal the spring member from the electrolyte solution used in the electropolishing and/or electroplating process.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
• The present application claims the benefit of earlier filed U.S. Provisional Application Ser. No. 60/099,515, entitled METHOD AND APPARATUS FOR CHUCKING WAFER IN ELECTROPLATING, filed on Sep. 8, 1998 and earlier filed U.S. Provisional Application Ser. No. 60/110,134, entitled METHOD AND APPARATUS FOR CHUCKING WAFER IN ELECTROPLATING, filed on Nov. 28, 1998.[0001]
BACKGROUND OF THE INVENTION
• 1. Field of the Invention[0002]
• The present invention generally relates to methods and apparatus for holding and positioning semiconductor workpieces during processing of the workpieces. More particularly, the present invention relates to a system for electropolishing and/or electroplating metal layers on semiconductor wafers.[0003]
• 2. Description of the Related Art[0004]
• In general, semiconductor devices are manufactured or fabricated on disks of semiconducting materials called wafers or slices. More particularly, wafers are initially sliced from a silicon ingot. The wafers then undergo multiple masking, etching, and deposition processes to form the electronic circuitry of semiconductor devices.[0005]
• During the past decades, the semiconductor industry has increased the power of semiconductor devices in accordance with Moore's law, which predicts that the power of semiconductor devices will double every 18 months. This increase in the power of semiconductor devices has been achieved in part by decreasing the feature size (i.e., the smallest dimension present on a device) of these semiconductor devices. In fact, the feature size of semiconductor devices has quickly gone from 0.35 microns to 0.25 microns, and now to 0.18 microns. Undoubtedly, this trend toward smaller semiconductor devices is likely to proceed well beyond the sub-0.18 micron stage.[0006]
• However, one potential limiting factor to developing more powerful semiconductor devices is the increasing signal delays at the interconnections (the lines of conductors, which connect elements of a single semiconductor device and/or connect any number of semiconductor devices together). As the feature size of semiconductor devices has decreased, the density of interconnections on the devices has increased. However, the closer proximity of interconnections increases the line-to-line capacitance of the interconnections, which results in greater signal delay at the interconnections. In general, interconnection delays have been found to increase with the square of the reduction in feature size. In contrast, gate delays (i.e., delay at the gates or mesas of semiconductor devices) have been found to increase linearly with the reduction in feature size.[0007]
• One conventional approach to compensate for this increase in interconnection delay has been to add more layers of metal. However, this approach has the disadvantage of increasing production costs associated with forming the additional layers of metal. Furthermore, these additional layers of metal generate additional heat, which can be adverse to both chip performance and reliability.[0008]
• Consequently, the semiconductor industry has started to use copper rather than aluminum to form the metal interconnections. One advantage of copper is that it has greater conductivity than aluminum. Also, copper is less resistant to electromigration (meaning that a line formed from copper will have less tendency to thin under current load) than aluminum.[0009]
• However, before copper can be widely used by the semiconductor industry, new processing techniques are required. More particularly, a copper layer may be formed on a wafer using an electroplating process and/or etched using an electropolishing process. In general, in an electroplating and/or an electropolishing process, the wafer is held within an electrolyte solution and an electric charge is then applied to the wafer. Thus, a wafer chuck is needed for holding the wafer and applying the electric charge to the wafer during the electroplating and/or electropolishing process.[0010]
SUMMARY OF THE INVENTION
• In an exemplary embodiment of the present invention, a wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer for processing. The spring member is disposed on the bottom section and configured to apply an electric charge to the wafer. In accordance with another aspect of the present invention, the spring member contacts a portion of the outer perimeter of the wafer. In one alternative configuration of the present invention, the wafer chuck further includes a seal member to seal the spring member from the electrolyte solution used in the electropolishing and/or electroplating process.[0011]
DESCRIPTION OF THE DRAWING FIGURES
• The subject matter of the present invention is particularly pointed out and distinctly claimed in the concluding portion of the specification. The present invention, however, both as to organization and method of operation, may best be understood by reference to the following description taken in conjunction with the claims and the accompanying drawing figures, in which like parts may be referred to by like numerals:[0012]
• FIG. 1 is a cross section view of a semiconductor-processing tool in accordance with various aspects of the present invention;[0013]
• FIG. 2 is a top view of the semiconductor-processing tool shown in FIG. 1;[0014]
• FIG. 3 is an exploded perspective view of a wafer chuck in accordance with various aspects of the present invention;[0015]
• FIG. 4 is an exploded perspective view of another configuration of the wafer chuck shown in FIG. 3;[0016]
• FIG. 5 is a cross section view of the wafer chuck shown in FIG. 4;[0017]
• FIGS. 6A and 6B are cross section views of the wafer chuck shown in FIG. 4 in accordance with various aspects of the present invention;[0018]
• FIGS. 7A to[0019]7G are cross section views of various alternative configurations of a portion of the wafer chuck shown in FIG. 6;
• FIG. 8 is a flow chart for handling wafers in accordance with various aspects of the present invention;[0020]
• FIG. 9 is a cross section view of an alternative embodiment of the present invention;[0021]
• FIG. 10 is a cross section view of a second alternative embodiment of the present invention;[0022]
• FIG. 11 is a cross section view of a third alternative embodiment of the present invention;[0023]
• FIG. 12 is a cross section view of a fourth alternative embodiment of the present invention;[0024]
• FIG. 13 is a cross section view of a fifth alternative embodiment of the present invention;[0025]
• FIG. 14 is a cross section view of a sixth alternative embodiment of the present invention;[0026]
• FIG. 15 is a cross section view of a seventh alternative embodiment of the present invention;[0027]
• FIG. 16 is a cross section view of an eighth alternative embodiment of the present invention;[0028]
• FIG. 17 is a cross section view of a ninth alternative embodiment of the present invention;[0029]
• FIG. 18 is a cross section view of a tenth alternative embodiment of the present invention;[0030]
• FIG. 19 is a cross section view of an eleventh alternative embodiment of the present invention;[0031]
• FIG. 20 is a cross section view of a twelfth alternative embodiment of the present invention;[0032]
• FIGS. 21A to[0033]21C are cross section views of a wafer chuck assembly in accordance with various aspects of the present invention; and
• FIG. 22 is a top view of a wafer in accordance with various aspects of the present invention.[0034]
DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
• In order to provide a more thorough understanding of the present invention, the following description sets forth numerous specific details, such as specific material, parameters, and the like. It should be recognized, however, that such description is not intended as a limitation on the scope of the present invention, but is instead provided to enable a more full and a more complete description of the exemplary embodiments.[0035]
• Additionally, the subject matter of the present invention is particularly suited for use in connection with electroplating and/or electropolishing of semiconductor workpieces or wafers. As a result, exemplary embodiments of the present invention are described in that context. It should be recognized, however, that such description is not intended as a limitation on the use or applicability of the present invention. Rather, such description is provided to enable a more full and a more complete description of the exemplary embodiments.[0036]
• With reference now to FIGS. 1 and 2, a wafer electroplating and/or[0037]electropolishing tool100, according to various aspects of the present invention, preferably includes anelectrolyte solution receptacle108 and awafer chuck104. In the present exemplary embodiment, with reference to FIG. 2,electrolyte solution receptacle108 is preferably divided intosections120,122,124,126,128 and130 bysection walls110,112,114,116 and118. It should be recognized, however, thatelectrolyte solution receptacle108 can be divided into any number of sections by any number of appropriate sections walls depending on the particular application.
• With reference to FIG. 1, in the present exemplary embodiment, a[0038]pump154 pumps anelectrolyte solution156 from areservoir158 intoelectrolyte solution receptacle108. More particularly,electrolyte solution156 flows through apass filter152 and Liquid Mass Flow Controllers (LMFCs)146,148 and150.Pass filter152 removes contaminants and unwanted particles fromelectrolyte solution156.LMFCs146,148 and150 control the flow ofelectrolyte solution156 intosections120,124 and128 (FIG. 2), respectively. It should be recognized, however, thatelectrolyte solution156 can be provided using any convenient method depending on the particular application.
• In the present exemplary embodiment, a[0039]robot168 inserts or provides awafer102 intowafer chuck104.Robot168 can obtainwafer102 from any convenient wafer cassette (not shown) or from a previous processing station or processing tool.Wafer102 can also be loaded intowafer chuck104 manually by an operator depending on the particular application.
• As will be described in greater detail below, after receiving[0040]wafer102,wafer chuck104 closes to holdwafer102.Wafer chuck104 then positionswafer102 withinelectrolyte solution receptacle108. More particularly, in the present exemplary embodiment,wafer chuck104positions wafer102 abovesection walls110,112,114,116 and118 (FIG. 2) to form a gap between the bottom surface ofwafer102 and the tops ofsection walls110,112,114,116 and118 (FIG. 2).
• In the present exemplary embodiment,[0041]electrolyte solution156 flows intosections120,124 and128 (FIG. 2), and contacts the bottom surface ofwafer102.Electrolyte solution156 flows through the gap formed between the bottom surface ofwafer102 andsection walls110,112,114,116 and118 (FIG. 2).Electrolyte solution156 then returns toreservoir158 throughsections122,126 and130 (FIG. 2).
• As will be described in greater detail below,[0042]wafer102 is connected to one ormore power supplies140,142 and144. Also, one ormore electrodes132,134 and136 disposed withinelectrolyte solution receptacle108 are connected topower supplies140,142 and144.
• When[0043]electrolyte solution156contacts wafer102, a circuit is formed to electroplate and/or to electropolishwafer102. Whenwafer102 is electrically charged to have negative electric potential relative toelectrodes132,134 and136,wafer102 is electroplated. Whenwafer102 is electrically charged to have positive electric potential relative toelectrodes132,134 and136,wafer102 is suitably electropolished. Additionally, whenwafer102 is electroplated,electrolyte solution156 is preferably a sulfuric acid solution. Whenwafer102 is electropolished,electrolyte solution156 is preferably a phosphoric acid solution. It should be recognized, however, thatelectrolyte solution156 can include various chemistries depending on the particular application. Additionally,wafer102 can be rotated and/or oscillated to facilitate a more uniform electroplating and/or electropolishing ofwafer102. For a more detailed description of electropolishing and electroplating processes, see U.S. patent application Ser. No. 09/232,864, entitled PLATING APPARATUS AND METHOD, filed on Jan. 15, 1999, the entire content of which is incorporated herein by reference, and PCT patent application No. PCT/US99/15506, entitled METHODS AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTIONS ON SEMICONDUCTOR DEVICES, filed on Aug. 7, 1999, the entire content of which is incorporated herein by reference.
• As alluded to earlier, specific details related to electroplating and/or[0044]electropolishing tool100 have been provided above to enable a more full and a more complete description of the present invention. As such, various aspects of electroplating and/orelectropolishing tool100 can be modified without deviating from the spirit and/or scope of the present invention. For example, although electroplating and/orelectropolishing tool100 has been depicted and described as havingelectrolyte solution receptacle108 with a plurality of sections, electroplating and/orelectropolishing tool100 can include a static bath.
• Having thus described an exemplary electroplating and/or electropolishing tool and method, an exemplary embodiment of[0045]wafer chuck104 will hereafter be described. As a preliminary matter, for the sake of clarity and convenience,wafer chuck104 will hereafter be described in connection with electroplating of a semiconductor wafer. However, it should be recognized thatwafer chuck104 can be used in connection with any convenient wafer process, such as electropolishing, cleaning, etching, and the like. Additionally, it should be recognized thatwafer chuck104 can be used in connection with processing of various workpieces other than semiconductor wafers.
• With reference now to FIG. 3,[0046]wafer chuck104 includes abottom section302 and atop section304. As will be described in greater detail below, during the electroplating process, in the present exemplary embodiment,wafer102 is held betweenbottom section302 andtop section304. In this regard,wafer chuck104 is suitably configured to open and close for inserting and/or removingwafer102.
• With reference to FIGS. 21A to[0047]21C, awafer chuck assembly2100 suitably configured to open andclose wafer chuck104 is described below. As will be described in greater detail below,wafer chuck assembly2100 is further configured to rotatewafer chuck104.
• In the present exemplary embodiment,[0048]wafer chuck assembly2100 includes ashaft2102, acollar2104, a plurality ofrods2106, and a plurality ofsprings2108.Shaft2102 is rigidly fixed totop section304 and mounted to asupport housing2110 throughbearing2112 andbushing2114.Shaft2102 is also mounted to supportbeam2116 throughbearing2118.Rods2106 are rigidly fixed tobottom section302 andcollar2104.Collar2104 is suitably configured to slip alongshaft2102.Springs2108 are disposed aroundrods2106.
• [0049]Wafer chuck assembly2100 also includes screw-gears2120, gears2122 and2124, aguide rail2126 for raising and lowering as well as opening andclosing wafer chuck104. More particularly, as depicted in FIG. 21A,wafer chuck104 can be lowered into an electrolyte solution receptacle108 (FIG. 1). In this position, springs2108 are extended to hold closedtop section304 andbottom section302. In accordance with another aspect of the present invention,top section304 andbottom section302 are held closed by a vacuum applied tovacuum chamber2130 formed betweentop section304 andbottom section302. Vacuum can be provided fromshaft2102 throughvacuum line2132.
• As depicted in FIG. 21B,[0050]wafer chuck104 can be raised from electrolyte solution receptacle108 (FIG. 1). Aswafer chuck104 is raised,collar2104 contacts supporthousing2110. As depicted in FIG. 21C,rods2106 preventbottom section302 from rising any further, but springs2108 compress to permittop section304 to continue to rise. In this manner,wafer chuck104 can be opened to remove and/or insertwafer102.
• With reference again to FIG. 21A, in accordance with another aspect of the present invention,[0051]wafer chuck assembly2100 is suitably configured to rotatewafer chuck104. In the present exemplary embodiment,wafer chuck assembly2100 includes abelt wheel2134, amotor2136, and aslip ring assembly2138.Belt wheel2134 andmotor2136 rotateshaft2102. Whileshaft2102 rotates,slip ring assembly2138 facilitates the flow of vacuum, pressure gas, and electricity into and/or out ofshaft2102. In the present exemplary embodiment,slip ring assembly2138 includes aring base2140, seals2142, abrush2144, springs2146, and screws2148.Seals2142 can be formed from a low friction material such as polytetrafluoroethylene (commercially known as TEFLON).Seals2142 also can be formed from a variety of spring loaded seals available from Bay Seal Engineering Company, Incorporated of Foothill Ranch, Calif.Brush2144 can be formed from an electrically conducting and low friction material, such as graphite.Shaft2102 is formed from a metal or metal alloy resistant to corrosion, such as stainless steel. In accordance with one aspect of the present embodiment, in order to reduce friction, the surface ofshaft2102 contactingseals2142 andbrush2144 is machined to a surface roughness less than about 5 micron, and preferably less than about 2 micron.
• It should be recognized that[0052]wafer chuck104 can be opened and closed, raised and lowered, and rotated using any convenient apparatus and method. For example,wafer chuck104 can be opened and closed using pneumatic actuators, magnetic forces, and the like. Also see U.S. Provisional Application Ser. No. 60/110,134, entitled METHOD AND APPARATUS FOR CHUCKING WAFER IN ELECTROPLATING, filed on Nov. 28, 1998, the entire content of which is incorporated herein by reference.
• With reference again to FIG. 3,[0053]bottom section302 andtop section304 are formed from any convenient material electrically insulated and resistant to acid and corrosion, such as ceramic, polytetrafluoroethylene (commercially known as TEFLON), PolyVinyl Choride (PVC), PolyVinylindene Fluoride (PVDF), Polypropylene, and the like. Alternatively,bottom section302 andtop section304 can be formed from any electrically conducting material (such as metal, metal alloy, and the like), coated with material, which is electrically insulating and resistant to acid and corrosion.
• [0054]Wafer chuck104 according to various aspects of the present invention further includes aspring member306, a conductingmember308, and aseal member310. As alluded to earlier, the present invention is particular well suited for use in connection with holding semiconductor wafers. In general, semiconductor wafers are substantially circular in shape. Accordingly, the various components of wafer chuck104 (i.e.,bottom section302,seal member310, conductingmember308,spring member306, and top section304) are depicted as having substantially circular shape. It should be recognized, however, that the various components ofwafer chuck104 can include various shapes depending on the particular application. For example, with reference to FIG. 22,wafer2200 can be formed with aflat edge2202. Thus, the various components ofwafer chuck104 can be formed to conform withflat edge2202.
• With reference now to FIG. 5, when[0055]wafer102 is disposed betweenbottom section302 andtop section304, in accordance with one aspect of the present invention,spring member306 preferablycontacts wafer102 around the outer perimeter ofwafer102.Spring member306 also preferablycontacts conducting member308. Thus, when an electric charge is applied to conductingmember308, the electric charge is transmitted towafer102 throughspring member306.
• As depicted in FIG. 5, in the present exemplary embodiment,[0056]spring member306 is disposed betweenwafer102 andlip portion308aof conductingmember308. Accordingly, when pressure is applied to holdbottom section302 andtop section304 together,spring member306 conforms to maintain electrical contact betweenwafer102 and conductingmember308. More particularly, the tops and bottoms of the coils inspring member306contact wafer102 andlip portion308a, respectively. Additionally,spring member306 can be joined tolip portion308ato form a better electrical contact using any convenient method, such as soldering, welding, and the like.
• The number of contact points formed between[0057]wafer102 and conductingmember308 can be varied by varying the number of coils inspring member306. In this manner, the electric charge applied towafer102 can be more evenly distributed around the outer perimeter ofwafer102. For example, for a 200 millimeter (mm) wafer, an electric charge having about 1 to about 10 amperes is typically applied. Ifspring member306 forms about 1000 contact points withwafer102, then for the 200 mm wafer, the applied electric charge is reduced to about 1 to about 10 milli-amperes per contact point.
• In the present exemplary[0058]embodiment conducting member308 has been thus far depicted and described as having alip section308a. It should be recognized, however, that conductingmember308 can include various configurations to electricallycontact spring member306. For example, conductingmember308 can be formed withoutlip section308a. In this configuration, electrical contact can be formed between the side of conductingmember308 andspring member306. Moreover, conductingmember308 can be removed altogether. An electric charge can be applied directly tospring member306. However, in this configuration, hot spots can form in the portions ofspring member306 where the electric charge is applied.
• [0059]Spring member306 can be formed from any convenient electrically conducting, and corrosion-resistant material. In the present exemplary embodiment,spring member306 is formed from a metal or metal alloy (such as stainless steel, spring steel, titanium, and the like).Spring member306 can also be coated with a corrosion-resistant material (such as platinum, gold, and the like). In accordance with one aspect of the present invention,spring member306 is formed as a coil spring formed in a ring. However, conventional coil springs typically have cross sectional profiles, that can vary throughout the length of the coil. More specifically, in general, conventional coil springs have elliptical cross-sectional profiles, with a long diameter and a short diameter. In one part of the coil spring, the long and short diameters of the elliptical cross-sectional profile can be oriented vertically and horizontally, respectively. However, this elliptical cross-sectional profile typically twists or rotates along the length of the coil spring. Thus, in another part of the coil spring the long and short diameters of the elliptical cross-sectional profile can be oriented horizontally and vertically, respectively. This nonuniformity in the cross-sectional profile of the coil spring can result in nonuniform electrical contact withwafer102 and thus nonuniform electroplating.
• A coil spring having a uniform cross-sectional profile throughout its length can be difficult to produce and cost prohibitive. As such, in accordance with one aspect of the present invention,[0060]spring member306 is formed from a plurality of coil springs to maintain a substantially uniform cross sectional profile. In one configuration of the present embodiment, whenspring member306 is disposed on top oflip portion308a, the applied electric charge is transmitted fromlip portion308athroughout the length ofspring member306. Accordingly, in this configuration, the plurality of coil springs need not be electrically joined. However, as alluded to earlier, in another configuration of the present invention, the electric charge can be applied directly tospring member306. In this configuration, the plurality of coil springs is electrically joined using any convenient method, such as soldering, welding, and the like. In the present embodiment,spring member306 includes a plurality of coil springs, each coil spring having a length of about 1 to about 2 inches. It should be recognized, however, thatspring member306 can include any number of coil springs having any length depending on the particular application. Moreover, as alluded to earlier,spring member306 can include any convenient conforming and electrically conducting material.
• With reference to FIGS. 4 and 5,[0061]spring member306 can include aspring holder400. In the present exemplary embodiment, whenspring member306 is a coil spring,spring holder400 is configured as a rod that passes through the center of the loops of the coil spring.Spring holder400 facilitates the handling ofspring member306, particularly whenspring member306 includes a plurality of coil springs. Additionally,spring holder400 provides structural support to reduce undesired deformation ofspring member306. In the present exemplary embodiment,spring holder400 is preferably formed from a rigid material (such as metal, metal alloy, plastic, and the like). Additionally,spring holder400 is preferably formed from a corrosion resistant material (such as platium, titanium, stainless steel, and the like). Furthermore,spring holder400 can be electrically conducting or non-conducting.
• Conducting[0062]member308 can be formed from any convenient electrically conducting and corrosion-resistant material. In the present exemplary embodiment, conductingmember308 is formed from a metal or metal alloy (such as titanium, stainless steel, and the like) and coated with corrosion-resistant material (such as platinum, gold, and the like).
• An electric charge can be applied to conducting[0063]member308 throughtransmission line504 andelectrode502. It should be recognized thattransmission line504 can include any convenient electrically conducting medium. For example,transmission line504 can include electric wire formed from copper, aluminum, gold, and the like. Additionally,transmission line504 can be connected topower supplies104,142 and144 (FIG. 1) using any convenient method. For example, as depicted in FIG. 5,transmission line504 can be run throughtop section304 and along the top surface oftop section304. Alternatively,transmission line504 can be run throughtop section304.Transmission line504 can then be connected to lead2150 (FIG. 21A).
• [0064]Electrode502 is preferably configured to be compliant. Accordingly, when pressure is applied to holdbottom section302 andtop section304 together,electrode502 conforms to maintain electric contact with conductingmember308. In this regard,electrode502 can include a leaf spring assembly, a coil spring assembly, and the like.Electrode502 can be formed from any convenient electrically conducting material (such as any metal, metal alloy, and the like). In the present exemplary embodiment,electrode502 is formed from anti-corrosive material (such as titanium, stainless steel, and the like). Additionally, any number ofelectrodes502 can be disposed aroundtop section304 to apply an electric charge to conductingmember308. In the present exemplary embodiment, fourelectrodes502 are disposed approximately equally spaced at an interval of about 90 degrees aroundtop section304.
• As described above, to electroplate a metal layer,[0065]wafer102 is immersed in an electrolyte solution and an electric charge is applied towafer102. Whenwafer102 is electrically charged with a potential greater thanelectrodes132,134 and136 (FIG. 1), metal ions within the electrolyte solution migrate to the surface ofwafer102 to form a metal layer. However, when the electric charge is applied, shorting can result ifspring member306 and/or conductingmember308 are exposed to the electrolyte solution. Additionally, during an electroplating process whenwafer102 includes a seed layer of metal, the metal seed layer can act as an anode andspring member306 can act as a cathode. As such, a metal layer can form onspring member306 and the seed layer onwafer102 can be electropolished (i.e., removed). The shorting ofspring member306 and the removal of the seed layer onwafer102 can reduce the uniformity of the metal layer formed onwafer102.
• Thus, in accordance with various aspects of the present invention,[0066]seal member310 isolatesspring member306 and conductingmember308 from the electrolyte solution.Seal member310 is preferably formed from anti-corrosive material, such as Viton (fluorocarbon) rubber, silicone rubber, and the like. Also, although in the present exemplary embodiment depicted in FIG. 5,seal member310 includes an L-shaped profile, it should be recognized thatseal member310 can include various shapes and configurations depending on the particular application. Some examples of the various configurations ofseal member310 are depicted in FIGS. 7A to7G. However, it should be recognized that the various configurations depicted in FIGS. 7A to7G are only exemplary and not intended to show each and every possible alternative configuration ofseal member310.
• As describe above and as depicted in FIG. 5,[0067]spring member306 andseal member310contact wafer102 around the outer perimeter ofwafer102. More particularly,spring member306 andseal member310 contact awidth506 of the outer perimeter ofwafer102. In general, this area ofwafer102 cannot be used to later form microelectronic structure and the like. As such, in accordance with one aspect of the present invention,width506 is maintained at a small ratio of the overall surface area ofwafer102. For example, for about a 300 millimeter (mm) wafer,width506 is kept between about 2 mm to about 6 mm. It should be recognized, however, thatwidth506 can be any ratio of the overall surface area ofwafer102 depending on the particular application. For example, in one application, the amount of metal layer deposited onwafer102 can be more important than the usable area ofwafer102. As such, a large portion of the surface area ofwafer102 can be dedicated to contactingspring member306 and sealingmember310 to receive a large applied charge.
• With reference now to FIG. 8, the processing steps performed by wafer chuck[0068]104 (FIG. 6) are set forth in a flow chart format. With reference to FIG. 5,wafer chuck104 is opened (FIG. 8, block802) to receive awafer102 to be processed. More particularly,bottom section302 can be lowered relative totop section304. Alternatively,top section304 can be raised relative tobottom section302. As alluded to earlier, various methods can be used to openwafer chuck104, such as pneumatics, springs, vacuum, magnetics, and the like.
• If[0069]wafer chuck104 is empty (FIG. 8, YES branch onDecision Block804 to Block808), then anew wafer102, which is to be processed, is provided or inserted (FIG. 8, block808). However, ifwafer chuck104 contains a wafer, which has been previously processed, then the previously processed wafer is removed from wafer chuck104 (FIG. 8, NO branch onDecision Block804 to Block806), then thenew wafer102 is provided (FIG. 8, block808. As described above, the handling ofwafer102 can be performed by a robot168 (FIG. 1). Also,wafer102 can be obtained from a wafer cassette (not shown) and returned to the wafer cassette (not shown).
• After[0070]wafer102 is provided withinwafer chuck104,wafer chuck104 can be closed (FIG. 8, block810). As alluded to above,bottom section302 can be raised relative totop section304. Alternatively,top section304 can be lowered relative tobottom section304. As described above, whenwafer chuck104 is closed,spring member306 forms an electrical contact withwafer102 and conductingmember308. Additionally, conductingmember308 forms an electrical contact withelectrode502.
• After[0071]wafer chuck104 is closed,wafer chuck104 is lowered (FIG. 8, block812) within electrolyte solution receptacle108 (FIG. 1). As described above,wafer102 is then immersed in an electrolyte solution. Also, as described above,seal member310 prevents the electrolyte solution from coming into contact withspring member306 and conductingmember308.
• When[0072]wafer102 is immersed in the electrolyte solution, an electric charge is applied to wafer102 (FIG. 8, block814). More particularly, in the present exemplary embodiment, an electric charge is applied towafer102 throughtransmission line504,conductor502, conductingmember308, andspring member306. As described above,spring member306 forms a plurality of contact points around the outer perimeter ofwafer102 to facilitate a more even distribution of the electric charge applied towafer102. Additionally, as described above,spring member306 forms a plurality of contact points with conductingmember308 to facilitate a more even distribution of the electric charge applied tospring member306. It should be recognized that the electric charge can be applied either before or afterwafer chuck102 is lowered into electrolyte solution receptacle108 (FIG. 1).
• As alluded to earlier,[0073]wafer chuck104 can be rotated to facilitate a more even electroplating of the metal layer on wafer102 (FIG. 1). As depicted in FIG. 1, in the present exemplary embodiment,wafer chuck104 can be rotated about the z-axis. Additionally,wafer chuck104 can be oscillated in the x-y plane.
• With reference again to FIG. 5, after[0074]wafer102 has been electroplated and/or electropolished,wafer chuck104 can then be raised (FIG. 8, block816) from electrolyte solution receptacle108 (FIG. 1). In accordance with another aspect of the present invention, a dry gas (such as argon, nitrogen, and the like) is applied to remove residual electrolyte solution. More particularly, with reference to FIG. 6A, the dry gas is applied throughnozzle602 to remove residual electrolyte from the joint betweenseal member310 andwafer102. It should be recognized that any number ofnozzles602 can be used depending on the particular application. Additionally,wafer chuck104 can be rotated while the dry gas is applied throughnozzle602. As such,nozzle602 can be fixed or moveable.
• After[0075]wafer chuck104 has been raised,wafer chuck104 is opened (FIG. 8, block802). The processed wafer is then removed (FIG. 8, NO branch onDecision Block804 to Block806). A dry gas (such as argon, nitrogen, and the like) can be applied to remove residual electrolyte solution. More particularly, with reference to FIG. 6B, the dry gas is applied throughnozzle604 to remove residual electrolyte from conductingmember308,spring member306, andseal member310. Additionally,wafer chuck104 can be rotated while the dry gas is applied throughnozzle604. As such,nozzle604 can be fixed or moveable.
• After a new wafer is provided (FIG. 8, block[0076]808), the entire process can be repeated. It should be recognized, however, that various modifications can be made to the steps depicted in FIG. 8 without deviating from the spirit and scope of the present invention.
• In the following description and associated drawing figures, various alternative embodiments in accordance with various aspects of the present invention will be described and depicted. It should be recognized, however, that these alternative embodiments are not intended to demonstrate all of the various modifications, which can be made to the present invention. Rather, these alternative embodiments are provided to demonstrate only some of the many modifications, which are possible without deviating from the spirit and/or scope of the present invention.[0077]
• With reference now to FIG. 9, in an alternative exemplary embodiment of the present invention, a[0078]wafer chuck900 according to various aspects of the present invention includes apurge line906, anozzle908 and anozzle910. In the present exemplary embodiment,purge line906 andnozzles908 and910 inject a dry gas (such as argon, nitrogen, and the like) ontospring member914 andseal member904. In this manner, afterwafer102 is processed, residual electrolyte can be purged fromspring member914 andseal member904. As described above, maintainingspring member914 free of electrolyte solution facilitates a more uniform electroplating process. Additionally, purging electrolyte solution fromseal member904 facilitates a better seal when the next wafer is processed. As depicted in FIG. 9, in the present exemplary embodiment,purge line906 andnozzles908 and910 are formed in conductingmember902. Additionally,purge line906 can be connected to pressure line2152 (FIG. 21A). It should be recognized, however, thatwafer chuck900 can be suitably configured withpurge line906 andnozzles908 and910 in a variety of manners without deviating from the spirit and/or scope of the present invention. Furthermore, it should be recognized that any number ofpurge lines906,nozzles908 andnozzles910 can be formed inwafer chuck900.
• With reference now to FIG. 10, in another alternative exemplary embodiment of the present invention, a[0079]wafer chuck1000 according to various aspects of the present invention includes apurge line1002 and a plurality ofnozzles1004. In the present exemplary embodiment,purge line1002 and plurality ofnozzles1004 inject a dry gas (such as argon, nitrogen, and the like) ontoseal member1006. In this manner, afterwafer102 is processed and removed fromwafer chuck1000, residual electrolyte can be purged from the top ofseal member1006. As depicted in FIG. 10, in the present exemplary embodiment,purge line1002 and plurality ofnozzles1004 are formed intop section1008. It should be recognized, however, thatwafer chuck1000 can be suitably configured in a variety manner withpurge line1002 and plurality ofnozzles1004 without deviating from the spirit and/or scope of the present invention. Furthermore, it should be recognized that any number ofpurge lines1002 andnozzles1004 can be formed inwafer chuck1000.
• With reference now to FIG. 11, in still another alternative exemplary embodiment of the present invention, a[0080]wafer chuck1100 according to various aspects of the present invention includes apurge line1102 and a plurality ofnozzles1104 and1110. In the present exemplary embodiment,purge line1102 and plurality ofnozzles1104 and1110 inject a dry gas (such as argon, nitrogen, and the like) ontoseal member1106 andspring member1112, respectively. In this manner, afterwafer102 is processed and removed fromwafer chuck1100, residual electrolyte can be purged from the tops ofseal member1106 andspring member1112. As depicted in FIG. 11, in the present exemplary embodiment,purge line1102 and plurality ofnozzles1104 and1110 are formed intop section1108. It should be recognized, however, thatwafer chuck1100 can be suitably configured in a variety of manners withpurge line1102 and plurality ofnozzles1104 and1110 without deviating from the spirit and/or scope of the present invention. Furthermore, it should be recognized that any number ofpurge lines1102 andnozzles1104 and1110 can be formed inwafer chuck1100.
• With reference now to FIG. 12, in yet another alternative exemplary embodiment of the present invention, a[0081]wafer chuck1200 according to various aspects of the present invention includes apurge line1202 and a plurality ofseal rings1204 and1206. In the present exemplary embodiment,seal ring1206 forms a seal between conductingmember1208 and bottom section1210. Similarlyseal ring1204 forms a seal between conductingmember1208 andtop section1212. As a result, by feeding positive pressure gas intopurge line1202 and checking for leakage, the seal quality betweenwafer102 andseal member1214 can be checked. Alternatively,purge line1202 can be pumped to generate negative pressure to check the seal quality betweenwafer102 andseal member1214. If this latter process is used, to prevent electrolyte from being sucked intopurge line1202, the pumping ofpurge line1202 should cease after processing ofwafer102, then positive pressure should be injected throughpurge line1202 prior to removingwafer102. Afterwafer102 is processed and removed fromwafer chuck1200, by injecting a dry gas (such as argon, nitrogen, and the like) throughpurge line1202, residual electrolyte can be purged fromspring member1216 andseal member1214.
• With reference now to FIG. 13, in still yet another alternative exemplary embodiment of the present invention, a[0082]wafer chuck1300 according to various aspects of the present invention includes aseal member1302 having a trapezoidal shape. Whenwafer chuck1300 is rotated after processing ofwafer102, the trapezoidal shape ofseal member1302 facilitates the removal of residual electrolyte fromseal member1302. In the present exemplary embodiment,angle1304 ofseal member1302 can range between about 0 degrees to about 60 degrees, and preferably about 20 degrees.
• With reference now to FIG. 14, in another alternative exemplary embodiment of the present invention, a[0083]wafer chuck1400 according to various aspects of the present invention includes apurge line1402. In the present exemplary embodiment,purge line1402 is formed throughbottom section1406 andseal member1404. By feeding positive pressure gas throughpurge line1402, the seal quality betweenwafer102 andseal member1404 can be checked. Alternatively,purge line1404 can be pumped to generate negative pressure to check the seal quality betweenwafer102 andseal member1404. As noted above, if this latter process is used, to prevent electrolyte from being sucked intopurge line1402, the pumping ofpurge line1402 should cease after processing ofwafer102 and positive pressure should be injected throughpurge line1402 prior to removingwafer102
• With reference now to FIG. 15, in still another alternative exemplary embodiment of the present invention, a[0084]wafer chuck1500 according to various aspects of the present invention includes apurge line1502, apurge line1508, and a plurality ofseal rings1516 and1504. In the present exemplary embodiment,seal ring1516 forms a seal between conductingmember1518 andtop section1510. Similarlyseal ring1504 forms a seal between conductingmember1518 andbottom section1506. As a result, the seal quality betweenwafer102 andseal member1512 can be checked usingpurge line1502 and/orpurge line1508.
• More particularly, in one configuration, the seal quality can be checked by feeding pressure gas into[0085]purge line1502 andpurge line1508 and checking for leakage. In another configuration,purge line1502 andpurge line1508 can be pumped to generate negative pressure to check the seal quality betweenwafer102 andseal member1512. In still another configuration, eitherpurge line1502 orpurge line1508 can be fed with pressure while the other is pumped to generate negative pressure. When negative pressure is used to check for leakage, to prevent electrolyte from being sucked intopurge line1502 and/orpurge line1508, pumping should cease after processing ofwafer102, then positive pressure should be injected throughpurge line1502 and/orpurge line1508 prior to removingwafer102. Afterwafer102 is processed and removed fromwafer chuck1500, by injecting a dry gas (such as argon, nitrogen, and the like) throughpurge line1502 and/orpurge line1508, residual electrolyte can be purged fromseal member1512 andspring member1514.
• With reference now to FIG. 16, in another alternative exemplary embodiment of the present invention, a[0086]wafer chuck1600 according to various aspects of the present invention includes aspring member1608, a conductingmember1610 and aseal member1606. In the present exemplary embodiment,spring member1608 and conductingmember1610 are disposed withinseal member1606. This configuration has the advantage thatspring member1608, conductingmember1610, andseal member1606 can be pre-assembled.
• [0087]Wafer chuck1600 further includes apurge line1614 and a plurality ofnozzles1612 formed throughseal member1614 and conductingmember1610. By feeding positive pressure gas throughpurge line1614, the seal quality betweenwafer102 andseal member1606 can be checked. Alternatively,purge line1614 can be pumped to generate negative pressure to check the seal quality betweenwafer102 andseal member1606. As noted above, if this latter process is used, to prevent electrolyte from being sucked intopurge line1614, the pumping ofpurge line1614 should cease after processing ofwafer102, then positive pressure should be injected throughpurge line1614 prior to removingwafer102
• With reference now to FIG. 17, in still another alternative exemplary embodiment of the present invention, a[0088]wafer chuck1700 includes apurge line1702 and a plurality ofnozzles1704. In the present exemplary embodiment,purge line1702 and plurality ofnozzles1704 inject a dry gas (such as argon, nitrogen, and the like) ontoseal member1710, conductingmember1708, andspring member1706. In this manner, afterwafer102 is processed and removed fromwafer chuck1700, residual electrolyte can be purged from the tops ofseal member1710, conductingmember1708, andspring member1706. As depicted in FIG. 17, in the present exemplary embodiment,purge line1702 and plurality ofnozzles1704 are formed intop section1712. It should be recognized, however, thatwafer chuck1700 can be suitably configured in a variety of manners withpurge line1702 and plurality ofnozzles1704 without deviating from the spirit and/or scope of the present invention. Furthermore, it should be recognized that any number ofpurge lines1702 andnozzles1704 can be formed inwafer chuck1700.
• With reference now to FIG. 18, in yet another alternative exemplary embodiment of the present invention, a[0089]wafer chuck1800 includes aseal member1802. In the present exemplary embodiment,seal member1802 is formed with a square interior groove for receivingspring member1804. This configuration has the advantage of more securely receivingspring member1804. It should be recognized, however,seal member1802 can be formed with a variety of shapes depending on the particular application.
• With reference now to FIG. 19, in still another alternative embodiment of the present invention, a[0090]wafer chuck1900 according to various aspects of the present invention includes apurge line1902, apurge line1908, and aseal ring1906. In the present exemplary embodiment,seal ring1906 forms a seal betweenbottom section1904 andtop section1910. As a result, the seal quality betweenwafer102 andseal member1912 can be checked usingpurge line1902 and/orpurge line1908.
• More particularly, in one configuration, the seal quality can be checked by feeding pressure gas into[0091]purge line1902 andpurge line1908 and checking for leakage. In another configuration,purge line1902 andpurge line1908 can be pumped to generate negative pressure to check the seal quality betweenwafer102 andseal member1912. In still another configuration, eitherpurge line1902 orpurge line1908 can be fed with pressure while the other is pumped to generate negative pressure. When negative pressure is used to check for leakage, to prevent electrolyte from being sucked intopurge line1902 and/orpurge line1908, pumping should cease after processing ofwafer102, then positive pressure should be injected throughpurge line1902 and/orpurge line1908 prior to removingwafer102. Afterwafer102 is processed and removed fromwafer chuck1900, by injecting a dry gas (such as argon, nitrogen, and the like) throughpurge line1902 and/orpurge line1908, residual electrolyte can be purged fromseal member1912 andspring member1914.
• With reference now to FIG. 20, in still yet another alternative exemplary embodiment of the present invention, a[0092]wafer chuck2000 according to various aspects of the present invention includes aseal member2002 having a trapezoidal shape. Whenwafer chuck2000 is rotated after processing ofwafer102, the trapezoidal shape ofseal member2002 facilitates the removal of residual electrolyte fromseal member2002. In the present exemplary embodiment,angle2004 ofseal member2002 can range between about 0 degrees to about 60 degrees, and preferably about 20 degrees.
• As stated earlier, although the present invention has been described in conjunction with a number of alternative embodiments illustrated in the appended drawing figures, various modifications can be made without departing from the spirit and/or scope of the present invention. Therefore, the present invention should not be construed as being limited to the specific forms shown in the drawings and described above.[0093]

Claims (23)

1-50. (canceled)

51. A wafer chuck assembly for holding a wafer, the chuck assembly comprising:

a top section;

a bottom section that engages with the top section to hold the wafer between the top and bottom sections;

a shaft attached to the top section, wherein the shaft rotates to rotate the top and bottom sections when the top and bottom sections are engaged; and

a brush that contacts the shaft to transfer an electric charge to the shaft while the shaft rotates.

52. The chuck assembly ofclaim 51, further comprising:

a spring member disposed between the bottom section and the wafer when the wafer is held between the top and bottom sections, wherein the spring member is electrically connected to the shaft to apply the electric charge to the wafer.

53. The chuck assembly ofclaim 52, wherein the spring member is a coil spring, and wherein top portions of the coil spring contact the wafer when the wafer is held between the top and bottom sections.

54. The chuck assembly ofclaim 52, further comprising:

a transmission line electrically connected to the shaft; and

a conducting member disposed on the bottom section, wherein the conducting member is electrically connected to the transmission line and the spring member to transmit the electrical charge to the spring member.

55. The chuck assembly ofclaim 54, further comprising:

an electrode connected to the transmission line, wherein the electrode engages with the conducting member when the top and bottom sections are engaged, and wherein the electrode disengages from the conducting member when the top and bottom sections are disengaged.

56. The chuck assembly ofclaim 51, further comprising:

a belt connected to the shaft; and

a motor connected to the belt to rotate the shaft.

57. The chuck assembly ofclaim 51, further comprising:

a slip ring assembly having seals formed around the shaft, wherein a first pair of seals forms a first cavity through which a gas is introduced into a first channel formed in the shaft while the shaft rotates within the slip ring assembly.

58. The chuck assembly ofclaim 57, further comprising:

a first nozzle assembly disposed in the bottom section to apply the gas; and

a second nozzle assembly disposed in the top section to apply the gas.

59. The chuck assembly ofclaim 57, wherein a second pair of seals forms a second cavity through which a vacuum is applied to a second channel formed in the shaft while the shaft rotates within the slip ring assembly.

60. The chuck assembly ofclaim 59, further comprising:

a vacuum chamber formed between the top and bottom sections; and

a vacuum line connected between the second channel formed in the shaft and the vacuum chamber to apply the vacuum to the vacuum chamber when the top and bottom sections are engaged.

61. A wafer chuck assembly for holding a wafer, the chuck assembly comprising:

a top section;

a bottom section that engages with the top section to hold the wafer;

a shaft attached to the top section;

a motor connected to the shaft to rotate the shaft;

a brush that contacts the shaft to transfer an electric charge to the shaft while the shaft rotates; and

a slip ring assembly having seals formed around the shaft, wherein a first pair of seals forms a first cavity through which a gas is introduced into a first channel formed in the shaft while the shaft rotates within the slip ring assembly, and wherein a second pair of seals forms a second cavity through which a vacuum is applied to a second channel formed in the shaft while the shaft rotates within the slip ring assembly.

62. The chuck assembly ofclaim 61, further comprising:

a spring member disposed between the bottom section and the wafer when the wafer is held between the top and bottom sections, wherein the spring member is electrically connected to the shaft to apply the electric charge to the wafer.

63. The chuck assembly ofclaim 62, wherein the spring member is a coil spring, and wherein top portions of the coil spring contact the wafer when the wafer is held between the top and bottom sections.

64. The chuck assembly ofclaim 62, further comprising:

a transmission line electrically connected to the shaft; and

a conducting member disposed on the bottom section, wherein the conducting member is electrically connected to the transmission line and the spring member to transmit the electrical charge to the spring member.

65. The chuck assembly ofclaim 64, further comprising:

an electrode connected to the transmission line, wherein the electrode engages with the conducting member when the top and bottom sections are engaged, and wherein the electrode disengages from the conducting member when the top and bottom sections are disengaged.

66. The chuck assembly ofclaim 61, further comprising:

a belt connected to the shaft and the motor to rotate the shaft.

67. The chuck assembly ofclaim 61, further comprising:

a first nozzle assembly disposed in the bottom section to apply the gas; and

a second nozzle assembly disposed in the top section to apply the gas.

68. The chuck assembly ofclaim 61, further comprising:

a vacuum chamber formed between the top and bottom sections; and

a vacuum line connected between the second channel formed in the shaft and the vacuum chamber to apply the vacuum to the vacuum chamber when the top and bottom sections are engaged.

69. A method of holding a wafer with a wafer chuck, the method comprising:

engaging a top section with a bottom section of the wafer chuck to hold the wafer between the top and bottom sections;

rotating a shaft attached to the top section to rotate the top and bottom sections when the top and bottom sections are engaged; and

applying an electric charge using a brush that contacts the shaft to transfer the electric charge to the shaft while the shaft rotates.

70. The method ofclaim 69, further comprising:

applying the electric charge to the wafer through a spring member disposed between the bottom section and the wafer when the wafer is held between the top and bottom sections, wherein the spring member is electrically connected to the shaft.

71. The method ofclaim 69, further comprising:

introducing a gas into a first channel formed in the shaft through a slip ring assembly having seals formed around the shaft while the shaft rotates within the slip ring assembly.

72. The method ofclaim 69, further comprising:

applying a vacuum to a second channel formed in the shaft through the slip ring assembly while the shaft rotates within the slip ring assembly.

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