US20040129223A1 - Apparatus and method for manufacturing silicon nanodot film for light emission - Google Patents
Apparatus and method for manufacturing silicon nanodot film for light emissionDownload PDFInfo
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- US20040129223A1 US20040129223A1US10/740,320US74032003AUS2004129223A1US 20040129223 A1US20040129223 A1US 20040129223A1US 74032003 AUS74032003 AUS 74032003AUS 2004129223 A1US2004129223 A1US 2004129223A1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-NSiliconChemical compound[Si]XUIMIQQOPSSXEZ-UHFFFAOYSA-N0.000titleclaimsabstractdescription39
- 229910052710siliconInorganic materials0.000titleclaimsabstractdescription38
- 239000010703siliconSubstances0.000titleclaimsabstractdescription38
- 238000000034methodMethods0.000titleclaimsabstractdescription26
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- 238000004519manufacturing processMethods0.000titleclaimsabstractdescription13
- 239000010409thin filmSubstances0.000claimsabstractdescription30
- 239000000463materialSubstances0.000claimsabstractdescription24
- 239000011159matrix materialSubstances0.000claimsabstractdescription19
- 229910052691ErbiumInorganic materials0.000claimsabstractdescription14
- UYAHIZSMUZPPFV-UHFFFAOYSA-NerbiumChemical compound[Er]UYAHIZSMUZPPFV-UHFFFAOYSA-N0.000claimsabstractdescription13
- 238000000151depositionMethods0.000claimsabstractdescription12
- 239000010408filmSubstances0.000claimsabstractdescription11
- 238000004544sputter depositionMethods0.000claimsabstractdescription9
- 239000000758substrateSubstances0.000claimsdescription17
- 239000007789gasSubstances0.000claimsdescription10
- 229910052761rare earth metalInorganic materials0.000claimsdescription8
- 150000002910rare earth metalsChemical class0.000claimsdescription8
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- 239000012495reaction gasSubstances0.000claimsdescription5
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- 229910052581Si3N4Inorganic materials0.000claimsdescription3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-NSilicium dioxideChemical compoundO=[Si]=OVYPSYNLAJGMNEJ-UHFFFAOYSA-N0.000claimsdescription3
- HBMJWWWQQXIZIP-UHFFFAOYSA-Nsilicon carbideChemical compound[Si+]#[C-]HBMJWWWQQXIZIP-UHFFFAOYSA-N0.000claimsdescription3
- 229910010271silicon carbideInorganic materials0.000claimsdescription3
- HQVNEWCFYHHQES-UHFFFAOYSA-Nsilicon nitrideChemical compoundN12[Si]34N5[Si]62N3[Si]51N64HQVNEWCFYHHQES-UHFFFAOYSA-N0.000claimsdescription3
- 229910052814silicon oxideInorganic materials0.000claimsdescription3
- 238000004891communicationMethods0.000abstractdescription3
- 238000000623plasma-assisted chemical vapour depositionMethods0.000abstract1
- 230000008021depositionEffects0.000description5
- 239000004065semiconductorSubstances0.000description5
- 230000003287optical effectEffects0.000description3
- 230000010354integrationEffects0.000description2
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- 238000007254oxidation reactionMethods0.000description2
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- -1ErbiumChemical class0.000description1
- 229910052693EuropiumInorganic materials0.000description1
- 229910052779NeodymiumInorganic materials0.000description1
- 229910052777PraseodymiumInorganic materials0.000description1
- BLRPTPMANUNPDV-UHFFFAOYSA-NSilaneChemical compound[SiH4]BLRPTPMANUNPDV-UHFFFAOYSA-N0.000description1
- 229910052775ThuliumInorganic materials0.000description1
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Classifications
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Definitions
- the present inventionrelates to a silicon nanodot film, more specifically, to an apparatus and method for manufacturing the silicon nanodot film for light emission in nano-size photonic devices.
- an emission efficiencyis significantly increased due to quantum confinement effect wherein silicon clusters of nano-size are used as light emitting materials. Additionally, the emission range can be adjusted from a visible emission to a near infrared emission by adjusting the size of the silicon nanodot. In particular, in Er-doped semiconductor light emitting devices, the efficiency of exciting erbium can be significantly improved through the increase of interaction of silicon nanodot with an Erbium (Er) element, which is caused by phenomenon that the distance between the silicon nanodot and an Erbium (Er) element is shortened.
- ErErbium
- the Erbiumwhich has been applied for EDFA (Erbium Doped Fiber Amplifier)
- EDFAErbium Doped Fiber Amplifier
- the light emitting devicescan be operated in various ranges of frequency, and hence it is expected to have a significant influence. Therefore, to compensate drawbacks of amplifying signals through optical pumping in modern long-distance communication systems, a SOC (system on chip) device incorporated with small-sized optical devices such as an optical amplifier can be manufactured through semiconductor integration technology, or a simplified process.
- SOCsystem on chip
- silicon materialwhich is a representative of a semiconductor material, has a serious drawback in application of a photonic device due to its indirect band gap.
- a method for doping the silicon with light emitting materialsis required, and a technique for forming the silicon structure at nanometer levels should be ensured.
- the silicon nanodot filmwas doped with Erbium by ex-situ ion implanting process, or by pulse type laser deposition process using silicon target doped with Erbium after forming the silicon nanodot film by plasma enhanced chemical vapor method (PECVD).
- PECVDplasma enhanced chemical vapor method
- the object of the present inventionis to provide an apparatus and method for manufacturing silicon nanodot film for light emission by sputtering with light emitting materials, while depositing matrix thin films related silicon through PECVD.
- an apparatus for manufacturing a silicon nanodot thin film capable of emitting lightcomprises, a chamber having a gas supplying port and a gas exhaust port; a showerhead connected to said gas supplying port and displaced in said chamber; a stage positioned to be opposed to said showerhead and on which a substrate is mounted; and a sputter gun displaced toward said substrate, wherein a matrix thin film is deposited on said substrate by plasma generated between said showerhead and said substrate, while a light emitting material is sputtered from said sputter gun to be doped on said deposited matrix thin film.
- a method for manufacturing the silicon nanodot thin film capable of emitting light in accordance with the present invention to achieve the purposecomprises, a step of displacing a substrate on a stage within a chamber; and a step of depositing a matrix thin film on said substrate by implanting a reaction gas into said chamber and generating plasma, while doping said deposited matrix thin film with a light emitting material by sputtering said light emitting material capable of emitting light into said chamber at the same time.
- the matrix thin filmis based on one of silicon, silicon oxide, nitride, and carbide, and the light emitting material may be at least one type of rare earth metal, insulating material, or compound.
- FIG. 1shows a configuration of deposition equipment used for manufacturing the silicon nanodot film for light emission in accordance with the present invention.
- FIG. 1shows a configuration of deposition equipment used for manufacturing the silicon nanodot thin film for light emission in accordance with the present invention.
- a showerhead 2 connected to a gas supplying port 1is positioned in an upper portion of a chamber 10 , and a stage 4 where a substrate 3 is displaced on is positioned in a lower portion of the chamber.
- a gas exhausting port 6 connected to an exhausting pump 5is positioned in the lower portion of the chamber 10 , and a sputter gun 7 is directed toward the stage 4 is placed in one side of the chamber.
- the silicon oxidation film having silicon nanodotsis obtained, and in this case the size of the silicon nanodot is 3 nm, and the density thereof is 10 17 cm ⁇ 3 .
- a light emitting materialis sputtered from the sputter gun 7 consisting of a target having the light emitting material such as Erbium attached and a device for generating plasma for sputtering the light emitting material attached to the target, so that the matrix thin film deposited on the substrate 3 is doped with the light emitting material.
- the doping concentration of the light emitting materialcan be adjusted by controlling the sputtering speed of the sputter gun 7 , and the present invention can readily control the doping concentration of the light emitting material by single process of in-situ type.
- the light emitting materialis a rare earth metal, insulating material or their compound.
- the rare earth metalsuch as Erbium
- 0.5 to ⁇ 5 kV of direct current bias voltageis applied in a state of Ar plasma so that the sputtering is performed.
- a high temperature depositioncan be performed for the stage 4 having the substrate 3 thereon during deposition and doping processes by heating the stage or a uniform deposition can be performed by rotating the stage.
- a rare earth metalsuch as Er, Eu, Pr, Nd, Tm, etc emitting visible light or ultrared light
- a material having high energy gapsuch as silicon nitride, silicon oxide, silicon carbide, etc
- a thin film having various light emitting characteristiccan be manufactured.
- the present inventioncan provide a silicon nanodot thin film having uniform doping concentration without any damage by depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by a sputtering process at the same time.
- the silicon nanodot thin film obtained by the present inventionhas an improved light emitting characteristic in long distance communication frequency range of 1.54 ⁇ m as well as visible light range, so that the photoelectric element using silicon as a light emitting material in nano level can be manufactured, and the method for manufacturing the silicon nanodot thin film of the present invention can interact with the current semiconductor process technique, so that element integration can be effectively increased while using a simplified process.
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- Crystallography & Structural Chemistry (AREA)
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Abstract
Description
- 1. Field of the Invention[0001]
- The present invention relates to a silicon nanodot film, more specifically, to an apparatus and method for manufacturing the silicon nanodot film for light emission in nano-size photonic devices.[0002]
- 2. Description of the Prior Art[0003]
- According to recent research, it has been known that an emission efficiency is significantly increased due to quantum confinement effect wherein silicon clusters of nano-size are used as light emitting materials. Additionally, the emission range can be adjusted from a visible emission to a near infrared emission by adjusting the size of the silicon nanodot. In particular, in Er-doped semiconductor light emitting devices, the efficiency of exciting erbium can be significantly improved through the increase of interaction of silicon nanodot with an Erbium (Er) element, which is caused by phenomenon that the distance between the silicon nanodot and an Erbium (Er) element is shortened.[0004]
- In this regard, in case the Erbium, which has been applied for EDFA (Erbium Doped Fiber Amplifier), is doped on a thin film made of silicon nanodot, the light emitting devices can be operated in various ranges of frequency, and hence it is expected to have a significant influence. Therefore, to compensate drawbacks of amplifying signals through optical pumping in modern long-distance communication systems, a SOC (system on chip) device incorporated with small-sized optical devices such as an optical amplifier can be manufactured through semiconductor integration technology, or a simplified process.[0005]
- However, silicon material, which is a representative of a semiconductor material, has a serious drawback in application of a photonic device due to its indirect band gap. To utilize the silicon material in the photonic device, a method for doping the silicon with light emitting materials is required, and a technique for forming the silicon structure at nanometer levels should be ensured.[0006]
- In the prior art, the silicon nanodot film was doped with Erbium by ex-situ ion implanting process, or by pulse type laser deposition process using silicon target doped with Erbium after forming the silicon nanodot film by plasma enhanced chemical vapor method (PECVD).[0007]
- However, in the former case, damage is induced by a high energy acceleration and doping concentration can not be uniformly adjusted. In the latter case, a possibility of contamination is caused by impurities while manufacturing procedure of the target and different kinds of targets are manufactured in accordance with the doping concentration. For these reasons, the prior art techniques can not be applied to current semiconductor process techniques.[0008]
- Therefore, the object of the present invention is to provide an apparatus and method for manufacturing silicon nanodot film for light emission by sputtering with light emitting materials, while depositing matrix thin films related silicon through PECVD.[0009]
- To achieve the purpose, an apparatus for manufacturing a silicon nanodot thin film capable of emitting light in accordance with the present invention comprises, a chamber having a gas supplying port and a gas exhaust port; a showerhead connected to said gas supplying port and displaced in said chamber; a stage positioned to be opposed to said showerhead and on which a substrate is mounted; and a sputter gun displaced toward said substrate, wherein a matrix thin film is deposited on said substrate by plasma generated between said showerhead and said substrate, while a light emitting material is sputtered from said sputter gun to be doped on said deposited matrix thin film.[0010]
- In addition, a method for manufacturing the silicon nanodot thin film capable of emitting light in accordance with the present invention to achieve the purpose comprises, a step of displacing a substrate on a stage within a chamber; and a step of depositing a matrix thin film on said substrate by implanting a reaction gas into said chamber and generating plasma, while doping said deposited matrix thin film with a light emitting material by sputtering said light emitting material capable of emitting light into said chamber at the same time.[0011]
- The matrix thin film is based on one of silicon, silicon oxide, nitride, and carbide, and the light emitting material may be at least one type of rare earth metal, insulating material, or compound.[0012]
- FIG. 1 shows a configuration of deposition equipment used for manufacturing the silicon nanodot film for light emission in accordance with the present invention.[0013]
- Hereinafter, embodiments of the present invention will be explained with reference to the accompanying drawing. Although the present invention has been described in conjunction with the preferred embodiment, the present invention is not limited to the embodiments, and it will be apparent to those skilled in the art that the present invention can be modified in variation within the scope of the invention.[0014]
- FIG. 1 shows a configuration of deposition equipment used for manufacturing the silicon nanodot thin film for light emission in accordance with the present invention.[0015]
- A[0016]
showerhead 2 connected to a gas supplying port1 is positioned in an upper portion of achamber 10, and a stage4 where asubstrate 3 is displaced on is positioned in a lower portion of the chamber. A gas exhausting port6 connected to an exhausting pump5 is positioned in the lower portion of thechamber 10, and asputter gun 7 is directed toward the stage4 is placed in one side of the chamber. - Hereinafter, a procedure for depositing the silicon nanodot film will be explained by using the above-constructed depositing equipment.[0017]
- While a reaction gas is being supplied to the[0018]
chamber 10 through the gas supplying port1 after thesubstrate 3 is displaced on the stage4, a RF power8 is applied to theshowerhead 2 acting as an upper electrode and the stage4 acting as a lower electrode, thereby a plasma9 is generated. The generated plasma9 moves toward the lower portion of the chamber so that a matrix thin film based on the silicon is deposited on the substrate. At this time, if redundant silicons are present in the matrix thin film, by adjusting temperature, pressure, plasma condition, etc of the reaction gas and the substrate, these silicons form nanodots. Composition and growth speed of the thin film changes in a large amount in accordance with the value of the RF power for generating plasma and relative flow rate of the reaction gas, and if these conditions are precisely controlled, silicon nanodots having required size and concentration can be obtained. - For example, when the matrix thin film based on the silicon is deposited and is subject to thermal treatment by applying 20 watts of RF power thereto while flowing a 1:1 ratio of SiH[0019]4and O2gas flow rate under the process condition of 0.1 Torr and 150° C., the silicon oxidation film having silicon nanodots is obtained, and in this case the size of the silicon nanodot is 3 nm, and the density thereof is 1017cm−3.
- At the same time, a light emitting material is sputtered from the[0020]
sputter gun 7 consisting of a target having the light emitting material such as Erbium attached and a device for generating plasma for sputtering the light emitting material attached to the target, so that the matrix thin film deposited on thesubstrate 3 is doped with the light emitting material. The doping concentration of the light emitting material can be adjusted by controlling the sputtering speed of thesputter gun 7, and the present invention can readily control the doping concentration of the light emitting material by single process of in-situ type. - For example, the light emitting material is a rare earth metal, insulating material or their compound., and in the case of the rare earth metal such as Erbium, 0.5 to −5 kV of direct current bias voltage is applied in a state of Ar plasma so that the sputtering is performed.[0021]
- A high temperature deposition can be performed for the stage[0022]4 having the
substrate 3 thereon during deposition and doping processes by heating the stage or a uniform deposition can be performed by rotating the stage. - When the matrix thin film is deposited with an oxidation or nitride having high energy gap, implanting possibility of electron and hole due to a low conductivity of the conductive element is decreased, however, this drawback can be solved by manufacturing a superlattice structure alternatively having an insulating silicon nanodot thin film and a doped silicon layer. Furthermore, if a plurality of[0023]
sputter gun 7 is mounted in thechamber 10, a light emitting material such as various kinds of rare earth metal, insulating material, or compound as well as Erbium can be simultaneously doped. - For example, by doping a rare earth metal such as Er, Eu, Pr, Nd, Tm, etc emitting visible light or ultrared light on a material having high energy gap such as silicon nitride, silicon oxide, silicon carbide, etc, a thin film having various light emitting characteristic can be manufactured.[0024]
- The present invention can provide a silicon nanodot thin film having uniform doping concentration without any damage by depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by a sputtering process at the same time. The silicon nanodot thin film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 μm as well as visible light range, so that the photoelectric element using silicon as a light emitting material in nano level can be manufactured, and the method for manufacturing the silicon nanodot thin film of the present invention can interact with the current semiconductor process technique, so that element integration can be effectively increased while using a simplified process.[0025]
Claims (6)
1. An apparatus for manufacturing a silicon nanodot film for light emission, comprising:
a chamber having a gas supplying port and a gas exhaust port;
a showerhead connected to said gas supplying port and disposed in said chamber;
a stage disposed within said chamber positioned to be opposed to said showerhead and on which a substrate is mounted; and
a sputter gun disposed within said chamber for sputtering a light emitting material while a matrix thin film is deposited on said substrate by plasma generated between said showerhead and said substrate.
2. The apparatus as claimed inclaim 1 ,
wherein said chamber has a plurality of said sputter guns.
3. A method for manufacturing a silicon nanodot film for light emission, comprising:
(a) placing a substrate on a stage within a chamber; and
(b) depositing a matrix thin film on said substrate by implanting a reaction gas into said chamber and generating plasma, while doping said deposited matrix thin film with a light emitting material by sputtering said light emitting material into said chamber.
4. The method as claimed inclaim 3 ,
wherein said matrix thin film is based on one of silicon, silicon oxide, nitride, and carbide.
5. The method as claimed inclaim 3 ,
wherein said light emitting material is at least one of a rare earth metal, an insulating material, and a compound including a rare earth metal and an insulating material.
6. The method as claimed inclaim 5 ,
wherein said rare earth metal is Erbium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/601,197US7531068B2 (en) | 2002-12-24 | 2006-11-16 | Method for manufacturing silicon nanodot film for light emission in nano-size photonic devices |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20020083758 | 2002-12-24 | ||
| KR2002-83758 | 2002-12-24 | ||
| KR2003-11016 | 2003-02-21 | ||
| KR10-2003-0011016AKR100496266B1 (en) | 2002-12-24 | 2003-02-21 | Apparatus and method for manufacturing silicon nanodot film capable of emitting light |
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| US11/601,197DivisionUS7531068B2 (en) | 2002-12-24 | 2006-11-16 | Method for manufacturing silicon nanodot film for light emission in nano-size photonic devices |
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| US20040129223A1true US20040129223A1 (en) | 2004-07-08 |
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| US10/740,320AbandonedUS20040129223A1 (en) | 2002-12-24 | 2003-12-17 | Apparatus and method for manufacturing silicon nanodot film for light emission |
| US11/601,197Expired - Fee RelatedUS7531068B2 (en) | 2002-12-24 | 2006-11-16 | Method for manufacturing silicon nanodot film for light emission in nano-size photonic devices |
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| Country | Link |
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| US (2) | US20040129223A1 (en) |
| EP (1) | EP1434278B1 (en) |
| DE (1) | DE60334279D1 (en) |
Cited By (3)
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| US20070205095A1 (en)* | 2002-12-24 | 2007-09-06 | Park Jong H | Apparatus and method for manufacturing silicon nanodot film for light emission |
| US20120211351A1 (en)* | 2006-11-08 | 2012-08-23 | Atsushi Tomyo | Method and apparatus for forming silicon dots and method and apparatus for forming a substrate with silicon dots and insulating film |
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| CN102560384B (en)* | 2012-02-23 | 2013-12-11 | 成都精密光学工程研究中心 | Method for depositing nano dot matrix on surface of substrate |
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Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4392453A (en)* | 1981-08-26 | 1983-07-12 | Varian Associates, Inc. | Molecular beam converters for vacuum coating systems |
| US5099790A (en)* | 1988-07-01 | 1992-03-31 | Canon Kabushiki Kaisha | Microwave plasma chemical vapor deposition apparatus |
| US5423970A (en)* | 1991-04-12 | 1995-06-13 | Balzers Aktiengesellschaft | Apparatus for reactive sputter coating at least one article |
| US5522343A (en)* | 1988-09-14 | 1996-06-04 | Fujitsu Limited | Thin film formation apparatus |
| US5542979A (en)* | 1993-01-29 | 1996-08-06 | Kabushiki Kaisha Komatsu Seisakusho | Apparatus for producing thin film |
| US5779802A (en)* | 1990-12-10 | 1998-07-14 | Imec V.Z.W. | Thin film deposition chamber with ECR-plasma source |
| US6071572A (en)* | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
| US6255669B1 (en)* | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
| US20020003284A1 (en)* | 2000-05-23 | 2002-01-10 | Kordesch Martin E. | Amorphous aluminum nitride emitter |
| US6340824B1 (en)* | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| US20020088972A1 (en)* | 2000-06-21 | 2002-07-11 | Varhue Walter J. | Abrupt pn junction diode formed using chemical vapor deposition processing |
| US20030079757A1 (en)* | 2001-03-22 | 2003-05-01 | Koji Shibata | Method of cleaning cvd device and cleaning device therefor |
| US6656540B2 (en)* | 2000-03-27 | 2003-12-02 | Mitsubishi Heavy Industries, Ltd. | Method for forming metallic film and apparatus for forming the same |
| US20040136681A1 (en)* | 2003-01-10 | 2004-07-15 | Novellus Systems, Inc. | Erbium-doped oxide glass |
| US20050011449A1 (en)* | 2002-10-31 | 2005-01-20 | Micron Technology, Inc. | Gas delivery system for deposition processes, and methods of using same |
| US6851939B2 (en)* | 2001-04-23 | 2005-02-08 | Korea Institute Of Science And Technology | System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59179152A (en)* | 1983-03-31 | 1984-10-11 | Agency Of Ind Science & Technol | Production of thin film |
| JPH02276883A (en)* | 1989-04-19 | 1990-11-13 | Hitachi Ltd | Method for manufacturing phosphor thin film |
| KR19990031783A (en) | 1997-10-14 | 1999-05-06 | 박원훈 | ECC-PCC apparatus and thin film deposition method |
| US6340826B1 (en)* | 1998-03-30 | 2002-01-22 | Agisilaos Iliadis | Infra-red light emitting Si-MOSFET |
| KR100384892B1 (en)* | 2000-12-01 | 2003-05-22 | 한국전자통신연구원 | Fabrication method of erbium-doped silicon nano-dots |
| DE10104193A1 (en)* | 2001-01-31 | 2002-08-01 | Max Planck Gesellschaft | Method for producing a semiconductor structure with silicon clusters and / or nanocrystals and a semiconductor structure of this type |
| KR100411613B1 (en) | 2001-02-26 | 2003-12-18 | 한국표준과학연구원 | Silicon thin film structures for optoelectronic device and manufacturing method thereof |
| KR100828351B1 (en)* | 2001-04-17 | 2008-05-08 | 삼성전자주식회사 | Light-emitting diode and display device applying it |
| US6596133B1 (en)* | 2001-06-14 | 2003-07-22 | Cvc Products, Inc. | Method and system for physically-assisted chemical-vapor deposition |
| KR100450749B1 (en)* | 2001-12-28 | 2004-10-01 | 한국전자통신연구원 | Method of manufacturing er-doped silicon nano-dot array and laser ablation apparatus used therein |
| WO2003077320A1 (en)* | 2002-03-08 | 2003-09-18 | Matsushita Electric Works, Ltd. | Quantum device |
| US7092287B2 (en)* | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
| US20040129223A1 (en)* | 2002-12-24 | 2004-07-08 | Park Jong Hyurk | Apparatus and method for manufacturing silicon nanodot film for light emission |
| US20040214362A1 (en)* | 2003-01-22 | 2004-10-28 | Hill Steven E. | Doped semiconductor nanocrystal layers and preparation thereof |
| US7256426B2 (en)* | 2005-01-19 | 2007-08-14 | Sharp Laboratories Of America, Inc. | Rare earth element-doped silicon/silicon dioxide lattice structure |
| US7297642B2 (en)* | 2005-02-14 | 2007-11-20 | Sharp Laboratories Of America, Inc. | Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications |
| US7166485B1 (en)* | 2005-07-05 | 2007-01-23 | Sharp Laboratories Of America, Inc. | Superlattice nanocrystal Si-SiO2 electroluminescence device |
- 2003
- 2003-12-17USUS10/740,320patent/US20040129223A1/ennot_activeAbandoned
- 2003-12-22EPEP03029649Apatent/EP1434278B1/ennot_activeExpired - Lifetime
- 2003-12-22DEDE60334279Tpatent/DE60334279D1/ennot_activeExpired - Lifetime
- 2006
- 2006-11-16USUS11/601,197patent/US7531068B2/ennot_activeExpired - Fee Related
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4392453A (en)* | 1981-08-26 | 1983-07-12 | Varian Associates, Inc. | Molecular beam converters for vacuum coating systems |
| US5099790A (en)* | 1988-07-01 | 1992-03-31 | Canon Kabushiki Kaisha | Microwave plasma chemical vapor deposition apparatus |
| US5522343A (en)* | 1988-09-14 | 1996-06-04 | Fujitsu Limited | Thin film formation apparatus |
| US5779802A (en)* | 1990-12-10 | 1998-07-14 | Imec V.Z.W. | Thin film deposition chamber with ECR-plasma source |
| US5423970A (en)* | 1991-04-12 | 1995-06-13 | Balzers Aktiengesellschaft | Apparatus for reactive sputter coating at least one article |
| US5542979A (en)* | 1993-01-29 | 1996-08-06 | Kabushiki Kaisha Komatsu Seisakusho | Apparatus for producing thin film |
| US6071572A (en)* | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
| US6340824B1 (en)* | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| US6255669B1 (en)* | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
| US6656540B2 (en)* | 2000-03-27 | 2003-12-02 | Mitsubishi Heavy Industries, Ltd. | Method for forming metallic film and apparatus for forming the same |
| US20020003284A1 (en)* | 2000-05-23 | 2002-01-10 | Kordesch Martin E. | Amorphous aluminum nitride emitter |
| US20020088972A1 (en)* | 2000-06-21 | 2002-07-11 | Varhue Walter J. | Abrupt pn junction diode formed using chemical vapor deposition processing |
| US20030079757A1 (en)* | 2001-03-22 | 2003-05-01 | Koji Shibata | Method of cleaning cvd device and cleaning device therefor |
| US6851939B2 (en)* | 2001-04-23 | 2005-02-08 | Korea Institute Of Science And Technology | System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same |
| US20050011449A1 (en)* | 2002-10-31 | 2005-01-20 | Micron Technology, Inc. | Gas delivery system for deposition processes, and methods of using same |
| US20040136681A1 (en)* | 2003-01-10 | 2004-07-15 | Novellus Systems, Inc. | Erbium-doped oxide glass |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070205095A1 (en)* | 2002-12-24 | 2007-09-06 | Park Jong H | Apparatus and method for manufacturing silicon nanodot film for light emission |
| US7531068B2 (en)* | 2002-12-24 | 2009-05-12 | Electronics And Telecommunications Research Institute | Method for manufacturing silicon nanodot film for light emission in nano-size photonic devices |
| US20120211351A1 (en)* | 2006-11-08 | 2012-08-23 | Atsushi Tomyo | Method and apparatus for forming silicon dots and method and apparatus for forming a substrate with silicon dots and insulating film |
| US11293091B2 (en)* | 2016-09-09 | 2022-04-05 | Samsung Electronics Co., Ltd. | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60334279D1 (en) | 2010-11-04 |
| EP1434278B1 (en) | 2010-09-22 |
| EP1434278A1 (en) | 2004-06-30 |
| US20070205095A1 (en) | 2007-09-06 |
| US7531068B2 (en) | 2009-05-12 |
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