US20040079633A1 - Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing - Google Patents

Abstract

The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
• This application is a continuation of co-pending U.S. patent application Ser. No. 09/609,347, filed Jul. 5, 2000, which claims benefit of United States. Each of the aforementioned related patent applications is herein incorporated by reference.[0001]
BACKGROUND OF THE INVENTION
• 1. Field of the Invention[0002]
• The present invention generally relates to deposition of a metal layer onto a wafer/substrate. More particularly, the present invention relates to an electro-chemical deposition system or electroplating system for forming a metal layer on a wafer/substrate.[0003]
• 2. Description of the Related Art[0004]
• Sub-quarter micron, multi-level metallization is one of the key technologies for the next generation of ultra large scale integration (ULSI). The multilevel interconnects that lie at the heart of this technology require planarization of interconnect features formed in high aspect ratio apertures, including contacts, vias, lines and other features. Reliable formation of these interconnect features is very important to the success of ULSI and to the continued effort to increase circuit density and quality on individual substrates and die.[0005]
• As circuit densities increase, the widths of vias, contacts and other features, as well as the dielectric materials between them, decrease to less than 250 nanometers, whereas the thickness of the dielectric layers remains substantially constant, with the result that the aspect ratios for the features, i.e., their height divided by width, increases. Many traditional deposition processes, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have difficulty filling structures where the aspect ratio exceed 4:1, and particularly where it exceeds 10:1. Therefore, there is a great amount of ongoing effort being directed at the formation of void-free, nanometer-sized features having high aspect ratios wherein the ratio of feature height to feature width can be 4:1 or higher. Additionally, as the feature widths decrease, the device current remains constant or increases, which results in an increased current density in the feature.[0006]
• Elemental aluminum (Al) and its alloys have been the traditional metals used to form lines and plugs in semiconductor processing because of aluminum's perceived low electrical resistivity, its superior adhesion to silicon dioxide (SiO[0007]₂), its ease of patterning, and the ability to obtain it in a highly pure form. However, aluminum has a higher electrical resistivity than other more conductive metals such as copper, and aluminum also can suffer from electromigration leading to the formation of voids in the conductor.
• Copper and its alloys have lower resistivities than aluminum and significantly higher electromigration resistance as compared to aluminum. These characteristics are important for supporting the higher current densities experienced at high levels of integration and increase device speed. Copper also has good thermal conductivity and is available in a highly pure state. Therefore, copper is becoming a choice metal for filling sub-quarter micron, high aspect ratio interconnect features on semiconductor substrates.[0008]
• Despite the desirability of using copper for semiconductor device fabrication, choices of fabrication methods for depositing copper into very high aspect ratio features, such as a 4:1, having 0.35μ (or less) wide vias are limited. As a result of these process limitations, plating, which had previously been limited to the fabrication of lines on circuit boards, is just now being used to fill vias and contacts on semiconductor devices.[0009]
• Metal electroplating is generally known and can be achieved by a variety of techniques. A typical method generally comprises physical vapor depositing a barrier layer over the feature surfaces, physical vapor depositing a conductive metal seed layer, preferably copper, over the barrier layer, and then electroplating a conductive metal over the seed layer to fill the structure/feature. Finally, the deposited layers and the dielectric layers are planarized, such as by chemical mechanical polishing (CMP), to define a conductive interconnect feature.[0010]
• FIG. 1 is a cross sectional view of a simplified[0011]typical fountain plater10 incorporating contact pins. Generally, thefountain plater10 includes anelectrolyte container12 having a top opening, asubstrate holder14 disposed above theelectrolyte container12, ananode16 disposed at a bottom portion of theelectrolyte container12 and acontact ring20 contacting the substrate22. A plurality ofgrooves24 are formed in the lower surface of thesubstrate holder14. A vacuum pump (not shown) is coupled to thesubstrate holder14 and communicates with thegrooves24 to create a vacuum condition capable of securing the substrate22 to thesubstrate holder14 during processing. Thecontact ring20 comprises a plurality of metallic orsemi-metallic contact pins26 distributed about the peripheral portion of the substrate22 to define a central substrate plating surface. The plurality ofcontact pins26 extend radially inwardly over a narrow perimeter portion of the substrate22 and contact a conductive seed layer of the substrate22 at the tips of thecontact pins26. A power supply (not shown) is attached to thepins26 thereby providing an electrical bias to the substrate22. The substrate22 is positioned above thecylindrical electrolyte container12 and electrolyte flow impinges perpendicularly on the substrate plating surface during operation of thecell10.
• While present day electroplating cells, such as the one shown in FIG. 1, achieve acceptable results on larger scale substrates, a number of obstacles impair consistent reliable electroplating onto substrates having micron-sized, high aspect ratio features. Generally, these obstacles include providing uniform power distribution and current density across the substrate plating surface to form a metal layer having uniform thickness, preventing unwanted edge and backside deposition to control contamination to the substrate being processed as well as subsequent substrates, and maintaining a vacuum condition which secures the substrate to the substrate holder during processing. Also, the present day electroplating cells have not provided satisfactory throughput to meet the demands of other processing systems and are not designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements. Furthermore, current electroplating system platforms have not provided post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results within the same system platform.[0012]
• Therefore, there remains a need for an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. There is also a need for an electro-chemical deposition system that provides uniform power distribution and current density across the substrate plating surface to form a metal layer having uniform thickness and maintain a vacuum condition which secures the substrate to the substrate holder during processing. It would be desirable for the system to prevent and/or remove unwanted edge and backside deposition to control contamination to the substrate being processed as well as subsequent substrates. It would be further desirable for the electro-chemical deposition system to provide a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results.[0013]
SUMMARY OF THE INVENTION
• The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.[0014]
• One aspect of the invention provides an electro-chemical deposition system that provides uniform power distribution and current density across the substrate plating surface to form a metal layer having uniform thickness and maintain a vacuum condition which secures the substrate to the substrate holder during processing.[0015]
• Another aspect of the invention provides an electro-chemical deposition system that prevents and/or remove unwanted edge and backside deposition to control contamination to the substrate being processed as well as subsequent substrates.[0016]
• Yet another aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. The apparatus for rapid thermal anneal treatment preferably comprises a rapid thermal anneal chamber disposed adjacent the loading station of the electrochemical deposition system.[0017]
BRIEF DESCRIPTION OF THE DRAWINGS
• So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.[0018]
• So that the manner in which the above recited features, advantages and objects of the present invention are attained can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.[0019]
• It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.[0020]
• FIG. 1 is a cross sectional view of a simplified[0021]typical fountain plater10 incorporating contact pins.
• FIG. 2 is a perspective view of an[0022]electroplating system platform200 of the invention.
• FIG. 3 is a schematic view of an[0023]electroplating system platform200 of the invention.
• FIG. 4 is a schematic perspective view of a spin-rinse-dry (SRD) module of the present invention, incorporating rinsing and dissolving fluid inlets.[0024]
• FIG. 5 is a side cross sectional view of the spin-rinse-dry (SRD) module of FIG. 4 and shows a substrate in a processing position vertically disposed between fluid inlets.[0025]
• FIG. 6 is a cross sectional view of an[0026]electroplating process cell400 according to the invention.
• FIG. 7 is a partial cross sectional perspective view of a cathode contact ring.[0027]
• FIG. 8 is a cross sectional perspective view of the cathode contact ring showing an alternative embodiment of contact pads.[0028]
• FIG. 9 is a cross sectional perspective view of the cathode contact ring showing an alternative embodiment of the contact pads and an isolation gasket.[0029]
• FIG. 10 is a cross sectional perspective view of the cathode contact ring showing the isolation gasket.[0030]
• FIG. 11 is a simplified schematic diagram of the electrical circuit representing the electroplating system through each contact pin.[0031]
• FIG. 12 is a cross sectional view of a[0032]wafer assembly450 of the invention.
• FIG. 12A is an enlarged cross sectional view of the bladder area of FIG. 12.[0033]
• FIG. 13 is a partial cross sectional view of a wafer holder plate.[0034]
• FIG. 14 is a partial cross sectional view of a manifold.[0035]
• FIG. 15 is a partial cross sectional view of a bladder.[0036]
• FIG. 16 is a schematic diagram of an electrolyte replenishing system[0037]600.
• FIG. 17 is a cross sectional view of a rapid thermal anneal chamber.[0038]
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
• FIG. 2 is a perspective view of an[0039]electroplating system platform200 of the invention. FIG. 3 is a schematic view of anelectroplating system platform200 of the invention. Referring to both FIGS. 2 and 3, theelectroplating system platform200 generally comprises aloading station210, athermal anneal chamber211, a spin-rinse-dry (SRD)station212 and amainframe214. Preferably, theelectroplating system platform200 is enclosed in a clean environment using panels such as plexiglass panels. Themainframe214 generally comprises amainframe transfer station216 and a plurality ofprocessing stations218. Eachprocessing station218 includes one ormore processing cells240. Anelectrolyte replenishing system220 is positioned adjacent theelectroplating system platform200 and connected to theprocess cells240 individually to circulate electrolyte used for the electroplating process. Theelectroplating system platform200 also includes acontrol system222, typically comprising a programmable microprocessor.
• The[0040]loading station210 preferably includes one or more wafercassette receiving areas224, one or more loadingstation transfer robots228 and at least onewafer orientor230. The number of wafer cassette receiving areas, loadingstation transfer robots228 and wafer orientor included in theloading station210 can be configured according to the desired throughput of the system. As shown for one embodiment in FIGS. 2 and 3, theloading station210 includes two wafercassette receiving areas224, two loadingstation transfer robots228 and onewafer orientor230. Awafer cassette232 containingwafers234 is loaded onto the wafercassette receiving area224 to introducewafers234 into the electroplating system platform. The loadingstation transfer robot228transfers wafers234 between thewafer cassette232 and thewafer orientor230. The loadingstation transfer robot228 comprises a typical transfer robot commonly known in the art. The wafer orientor230 positions eachwafer234 in a desired orientation to ensure that the wafer is properly processed. The loadingstation transfer robot228 also transferswafers234 between theloading station210 and theSRD station212 and between theloading station210 and thethermal anneal chamber211.
• FIG. 4 is a schematic perspective view of a spin-rinse-dry (SRD) module of the present invention, incorporating rinsing and dissolving fluid inlets. FIG. 5 is a side cross sectional view of the spin-rinse-dry (SRD) module of FIG. 4 and shows a substrate in a processing position vertically disposed between fluid inlets. Preferably, the[0041]SRD station212 includes one ormore SRD modules236 and one or more wafer pass-throughcassettes238. Preferably, theSRD station212 includes twoSRD modules236 corresponding to the number of loadingstation transfer robots228, and a wafer pass-throughcassette238 is positioned above eachSRD module236. The wafer pass-throughcassette238 facilitates wafer transfer between theloading station210 and themainframe214. The wafer pass-throughcassette238 provides access to and from both the loadingstation transfer robot228 and a robot in themainframe transfer station216.
• Referring to FIGS. 4 and 5, the[0042]SRD module238 comprises a bottom330aand asidewall330b, and anupper shield330cwhich collectively define aSRD module bowl330d, where the shield attaches to the sidewall and assists in retaining the fluids within the SRD module. Alternatively, a removable cover could also be used. Apedestal336, located in the SRD module, includes apedestal support332 and apedestal actuator334. Thepedestal336 supports the substrate338 (shown in FIG. 5) on the pedestal upper surface during processing. Thepedestal actuator334 rotates the pedestal to spin the substrate and raises and lowers the pedestal as described below. The substrate may be held in place on the pedestal by a plurality ofclamps337. The clamps pivot with centrifugal force and engage the substrate preferably in the edge exclusion zone of the substrate. In a preferred embodiment, the clamps engage the substrate only when the substrate lifts off the pedestal during the processing. Vacuum passages (not shown) may also be used as well as other holding elements. The pedestal has a plurality ofpedestal arms336aand336b, so that the fluid through the second nozzle may impact as much surface area on the lower surface of the substrate as is practical. Anoutlet339 allows fluid to be removed from the SRD module. The terms “below”, “above”, “bottom”, “top”, “up”, “down”, “upper”, and “lower” and other positional terms used herein are shown with respect to the embodiments in the figures and may be varied depending on the relative orientation of the processing apparatus.
• A[0043]first conduit346, through which afirst fluid347 flows, is connected to avalve347a. The conduit may be hose, pipe, tube, or other fluid containing conduits. Thevalve347acontrols the flow of thefirst fluid347 and may be selected from a variety of valves including a needle, globe, butterfly, or other valve types and may include a valve actuator, such as a solenoid, that can be controlled with acontroller362. Theconduit346 connects to a firstfluid inlet340 that is located above the substrate and includes a mountingportion342 to attach to the SRD module and a connectingportion344 to attach to theconduit346. The first fluid inlet is shown with a singlefirst nozzle348 to deliver afirst fluid347 under pressure onto the substrate upper surface. However, multiple nozzles could be used and multiple fluid inlets could be positioned about the inner perimeter of the SRD module. Preferably, nozzles placed above the substrate should be outside the diameter of the substrate to lessen the risk of the nozzles dripping on the substrate. The first fluid inlet could be mounted in a variety of locations, including through a cover positioned above the substrate. Additionally, the nozzle may articulate to a variety of positions using an articulatingmember343, such as a ball and socket joint.
• Similar to the first conduit and related elements described above, a[0044]second conduit352 is connected to acontrol valve349aand a secondfluid inlet350 with asecond nozzle351. The secondfluid inlet350 is shown below the substrate and angled upward to direct a second fluid under the substrate through thesecond nozzle351. Similar to the first fluid inlet, the second fluid inlet may include a plurality of nozzles, a plurality of fluid inlets and mounting locations, and a plurality of orientations including using the articulatingmember353. Each fluid inlet could be extended into the SRD module at a variety of positions. For instance, if the flow is desired to be a certain angle that is directed back toward the SRD module periphery along the edge of the substrate, the nozzles could be extended radially inward and the discharge from the nozzles be directed back toward the SRD module periphery.
• The[0045]controller362 could individually control the two fluids and their respective flow rates, pressure, and timing, and any associated valving, as well as the spin cycle(s). The controller could be remotely located, for instance, in a control panel or control room and the plumbing controlled with remote actuators. An alternative embodiment, shown in dashed lines, provides anauxiliary fluid inlet346aconnected to thefirst conduit346 with aconduit346band having acontrol valve346c, which may be used to flow a rinsing fluid on the backside of the substrate after the dissolving fluid is flown without having to reorient the substrate or switch the flow through the second fluid inlet to a rinsing fluid.
• In one embodiment, the substrate is mounted with the deposition surface of the disposed face up in the SRD module bowl. As will be explained below, for such an arrangement, the first fluid inlet would generally flow a rinsing fluid, typically deionized water or alcohol. Consequently, the backside of the substrate would be mounted facing down and a fluid flowing through the second fluid inlet would be a dissolving fluid, such as an acid, including hydrochloric acid, sulfuric acid, phosphoric acid, hydrofluoric acid, or other dissolving liquids or fluids, depending on the material to be dissolved. Alternatively, the first fluid and the second fluid are both rinsing fluids, such as deionized water or alcohol, when the desired process is to rinse the processed substrate.[0046]
• In operation, the pedestal is in a raised position, shown in FIG. 4, and a robot (not shown) places the substrate, front side up, onto the pedestal. The pedestal lowers the substrate to a processing position where the substrate is vertically disposed between the first and the second fluid inlets. Generally, the pedestal actuator rotates the pedestal between about 5 to about 5000 rpm, with a typical range between about 20 to about 2000 rpm for a 200 mm substrate. The rotation causes the[0047]lower end337aof the clamps to rotate outward aboutpivot337b, toward the periphery of the SRD module sidewall, due to centrifugal force. The clamp rotation forces theupper end337cof the clamp inward and downward to center and hold thesubstrate338 in position on thepedestal336, preferably along the substrate edge. The clamps may rotate into position without touching the substrate and hold the substrate in position on the pedestal only if the substrate significantly lifts off the pedestal during processing. With the pedestal rotating the substrate, a rinsing fluid is delivered onto the substrate front side through the firstfluid inlet340. The second fluid, such as an acid, is delivered to the backside surface through the second fluid inlet to remove any unwanted deposits. The dissolving fluid chemically reacts with the deposited material and dissolves and then flushes the material away from the substrate backside and other areas where any unwanted deposits are located. In a preferred embodiment, the rinsing fluid is adjusted to flow at a greater rate than the dissolving fluid to help protect the front side of the substrate from the dissolving fluid. The first and second fluid inlets are located for optimal performance depending on the size of the substrate, the respective flow rates, spray patterns, and amount and type of deposits to be removed, among other factors. In some instances, the rinsing fluid could be routed to the second fluid inlet after a dissolving fluid has dissolved the unwanted deposits to rinse the backside of the substrate. In other instances, an auxiliary fluid inlet connected to flow rinsing fluid on the backside of the substrate could be used to rinse any dissolving fluid residue from the backside. After rinsing the front side and/or backside of the substrate, the fluid(s) flow is stopped and the pedestal continues to rotate, spinning the substrate, and thereby effectively drying the surface.
• The fluid(s) is generally delivered in a spray pattern, which may be varied depending on the particular nozzle spray pattern desired and may include a fan, jet, conical, and other patterns. One spray pattern for the first and second fluids through the respective fluid inlets, when the first fluid is a rinsing fluid, is fan pattern with a pressure of about 10 to about 15 pounds per square inch (psi) and a flow rate of about 1 to about 3 gallons per minute (gpm) for a 200 mm wafer.[0048]
• The invention could also be used to remove the unwanted deposits along the edge of the substrate to create an edge exclusion zone. By adjustment of the orientation and placement of the nozzles, the flow rates of the fluids, the rotational speed of the substrate, and the chemical composition of the fluids, the unwanted deposits could be removed from the edge and/or edge exclusion zone of the substrate as well. Thus, substantially preventing dissolution of the deposited material on the front side surface may not necessarily include the edge or edge exclusion zone of the substrate. Also, preventing dissolution of the deposited material on the front side surface is intended to include at least preventing the dissolution so that the front side with the deposited material is not impaired beyond a commercial value.[0049]
• One method of accomplishing the edge exclusion zone dissolution process is to rotate the disk at a slower speed, such as about 100 to about 1000 rpm, while dispensing the dissolving fluid on the backside of the substrate. The centrifugal force moves the dissolving fluid to the edge of the substrate and forms a layer of fluid around the edge due to surface tension of the fluid, so that the dissolving fluid overlaps from the backside to the front side in the edge area of the substrate. The rotational speed of the substrate and the flow rate of the dissolving fluid may be used to determine the extent of the overlap onto the front side. For instance, a decrease in rotational speed or an increase in flow results in a less overlap of fluid to the opposing side, e.g., the front side. Additionally, the flow rate and flow angle of the rinsing fluid delivered to the front side can be adjusted to offset the layer of dissolving fluid onto the edge and/or frontside of the substrate. In some instances, the dissolving fluid may be used initially without the rinsing fluid to obtain the edge and/or edge exclusion zone removal, followed by the rinsing/dissolving process of the present invention described above.[0050]
• The[0051]SRD module238 is connected between theloading station210 and themainframe214. Themainframe214 generally comprises amainframe transfer station216 and a plurality ofprocessing stations218. Referring to FIGS. 2 and 3, themainframe214, as shown, includes twoprocessing stations218, eachprocessing station218 having two processingcells240. Themainframe transfer station216 includes amainframe transfer robot242. Preferably, themainframe transfer robot242 comprises a plurality ofindividual robot arms244 that provides independent access of wafers in theprocessing stations218 and theSRD stations212. As shown in FIG. 3, themainframe transfer robot242 comprises tworobot arms244, corresponding to the number ofprocessing cells240 perprocessing station218. Eachrobot arm244 includes arobot blade246 for holding a wafer during a wafer transfer. Preferably, eachrobot arm244 is operable independently of the other arm to facilitate independent transfers of wafers in the system. Alternatively, therobot arms244 operate in a linked fashion such that one robot extends as the other robot arm retracts.
• Preferably, the[0052]mainframe transfer station216 includes aflipper robot248 that facilitates transfer of a wafer from a face-up position on therobot blade246 of themainframe transfer robot242 to a face down position for aprocess cell240 that requires face-down processing of wafers. Theflipper robot248 includes amain body250 that provides both vertical and rotational movements with respect to a vertical axis of themain body250 and aflipper robot arm252 that provides rotational movement along a horizontal axis along theflipper robot arm252. Preferably, avacuum suction gripper254, disposed at the distal end of theflipper robot arm252, holds the wafer as the wafer is flipped and transferred by theflipper robot248. Theflipper robot248 positions awafer234 into theprocessing cell240 for face-down processing. The details of the electroplating processing cell according to the invention will be discussed below.
• FIG. 6 is a cross sectional view of an[0053]electroplating process cell400 according to the invention. Theelectroplating process cell400 as shown in FIG. 6 is the same as theelectroplating process cell240 as shown in FIGS. 2 and 3. Theprocessing cell400 generally comprises ahead assembly410, aprocess kit420 and anelectrolyte collector440. Preferably, theelectrolyte collector440 is secured onto thebody442 of themainframe214 over anopening443 that defines the location for placement of theprocess kit420. Theelectrolyte collector440 includes aninner wall446, anouter wall448 and a bottom447 connecting the walls. Anelectrolyte outlet449 is disposed through thebottom447 of theelectrolyte collector440 and connected to the electrolyte replenishing system220 (shown in FIG. 2) through tubes, hoses, pipes or other fluid transfer connectors.
• The[0054]head assembly410 is mounted onto ahead assembly frame452. Thehead assembly frame452 includes a mountingpost454 and acantilever arm456. The mountingpost454 is mounted onto thebody442 of themainframe214, and thecantilever arm456 extends laterally from an upper portion of the mountingpost454. Preferably, the mountingpost454 provides rotational movement with respect to a vertical axis along the mounting post to allow rotation of thehead assembly410. Thehead assembly410 is attached to a mountingplate460 disposed at the distal end of thecantilever arm456. The lower end of thecantilever arm456 is connected to acantilever arm actuator457, such as a pneumatic cylinder, mounted on the mountingpost454. Thecantilever arm actuator457 provides pivotal movement of thecantilever arm456 with respect to the joint between thecantilever arm456 and the mountingpost454. When thecantilever arm actuator457 is retracted, thecantilever arm456 moves thehead assembly410 away from theprocess kit420 to provide the spacing required to remove and/or replace theprocess kit420 from theelectroplating process cell400. When thecantilever arm actuator457 is extended, thecantilever arm456 moves thehead assembly410 toward theprocess kit420 to position the wafer in thehead assembly410 in a processing position.
• The[0055]head assembly410 generally comprises awafer holder assembly450 and awafer assembly actuator458. Thewafer assembly actuator458 is mounted onto the mountingplate460, and includes ahead assembly shaft462 extending downwardly through the mountingplate460. The lower end of thehead assembly shaft462 is connected to thewafer holder assembly450 to position thewafer holder assembly450 in a processing position and in a wafer loading position.
• The[0056]wafer holder assembly450 generally comprises awafer holder464 and acathode contact ring466. FIG. 7 is a cross sectional view of one embodiment of acathode contact ring466 of the present invention. In general, thecontact ring466 comprises an annular body having a plurality of conducting members disposed thereon. The annular body is constructed of an insulating material to electrically isolate the plurality of conducting members. Together the body and conducting members form a diametrically interior substrate seating surface which, during processing, supports a substrate and provides a current thereto.
• Referring now to FIG. 7 in detail, the[0057]contact ring466 generally comprises a plurality of conductingmembers765 at least partially disposed within an annularinsulative body770. Theinsulative body770 is shown having aflange762 and a downwardsloping shoulder portion764 leading to asubstrate seating surface768 located below theflange762 such that theflange762 and thesubstrate seating surface768 lie in offset and substantially parallel planes. Thus, theflange762 may be understood to define a first plane while thesubstrate seating surface768 defines a second plane parallel to the first plane wherein theshoulder764 is disposed between the two planes. However, contact ring design shown in FIG. 7 is intended to be merely illustrative. In another embodiment, theshoulder portion764 may be of a steeper angle including a substantially vertical angle so as to be substantially normal to both theflange762 and thesubstrate seating surface768. Alternatively, thecontact ring466 may be substantially planar thereby eliminating theshoulder portion764. However, for reasons described below, a preferred embodiment comprises theshoulder portion764 shown in FIG. 6 or some variation thereof.
• The conducting[0058]members765 are defined by a plurality of outerelectrical contact pads780 annularly disposed on theflange762, a plurality of innerelectrical contact pads772 disposed on a portion of thesubstrate seating surface768, and a plurality of embedded conductingconnectors776 which link thepads772,780 to one another. The conductingmembers765 are isolated from one another by theinsulative body770 which may be made of a plastic such as polyvinylidenefluoride (PVDF), perfluoroalkoxy resin (PFA), Teflon™, and Tefzel™, or any other insulating material such as Alumina (Al₂O₃) or other ceramics. Theouter contact pads780 are coupled to a power supply (not shown) to deliver current and voltage to theinner contact pads772 via theconnectors776 during processing. In turn, theinner contact pads772 supply the current and voltage to a substrate by maintaining contact around a peripheral portion of the substrate. Thus, in operation the conductingmembers765 act as discrete current paths electrically connected to a substrate.
• Low resistivity, and conversely high conductivity, are directly related to good plating. To ensure low resistivity, the conducting[0059]members765 are preferably made of copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel or other conducting materials. Low resistivity and low contact resistance may also be achieved by coating the conductingmembers765 with a conducting material. Thus, the conductingmembers765 may, for example, be made of copper (resistivity for copper is approximately 2×10⁻⁸Ω.m) and be coated with platinum (resistivity for platinum is approximately 10.6×10⁻⁸Ω.m). Coatings such as tantalum nitride (TaN), titanium nitride (TiN), rhodium (Rh), Au, Cu, or Ag on a conductive base materials such as stainless steel, molybdenum (Mo), Cu, and Ti are also possible. Further, since thecontact pads772,780 are typically separate units bonded to the conductingconnectors776, thecontact pads772,780 may comprise one material, such as Cu, and the conductingmembers765 another, such as stainless steel. Either or both of thepads772,180 and conductingconnectors776 may be coated with a conducting material. Additionally, because plating repeatability may be adversely affected by oxidation which acts as an insulator, theinner contact pads772 preferably comprise a material resistant to oxidation such as Pt, Ag, or Au.
• In addition to being a function of the contact material, the total resistance of each circuit is dependent on the geometry, or shape, of the inner contact[0060]inner contact pads772 and the force supplied by thecontact ring466. These factors define a constriction resistance, R_CR, at the interface of theinner contact pads772 and thesubstrate seating surface768 due to asperities between the two surfaces. Generally, as the applied force is increased the apparent area is also increased. The apparent area is, in turn, inversely related to R_CRso that an increase in the apparent area results in a decreased R_CR. Thus, to minimize overall resistance it is preferable to maximize force. The maximum force applied in operation is limited by the yield strength of a substrate which may be damaged under excessive force and resulting pressure. However, because pressure is related to both force and area, the maximum sustainable force is also dependent on the geometry of theinner contact pads772. Thus, while thecontact pads772 may have a flat upper surface as in FIG. 7, other shapes may be used to advantage. For example, two preferred shapes are shown in FIGS. 8 and 9. FIG. 8 shows a knife-edge contact pad and FIG. 9 shows a hemispherical contact pad. A person skilled in the art will readily recognize other shapes which may be used to advantage. A more complete discussion of the relation between contact geometry, force, and resistance is given inNey Contact Manual,by Kenneth E. Pitney, The J. M. Ney Company, 1973, which is hereby incorporated by reference in its entirety.
• The number of[0061]connectors776 may be varied depending on the particular number of contact pads772 (shown in FIG. 7) desired. For a 200 mm substrate, preferably at least twenty-fourconnectors776 are spaced equally over 360°. However, as the number of connectors reaches a critical level, the compliance of the substrate relative to thecontact ring466 is adversely affected. Therefore, while more than twenty-fourconnectors776 may be used, contact uniformity may eventually diminish depending on the topography of thecontact pads772 and the substrate stiffness. Similarly, while less than twenty-fourconnectors776 may be used, current flow is increasingly restricted and localized, leading to poor plating results. Since the dimensions of the present invention are readily altered to suit a particular application (for example, a 300 mm substrate), the optimal number may easily be determined for varying scales and embodiments.
• As shown in FIG. 10, the[0062]substrate seating surface768 comprises anisolation gasket782 disposed on theinsulative body770 and extending diametrically interior to theinner contact pads772 to define the inner diameter of thecontact ring466. Theisolation gasket782 preferably extends slightly above the inner contact pads772 (e.g., a few mils) and preferably comprises an elastomer such as Viton™, Teflon™, buna rubber and the like. Where theinsulative body770 also comprises an elastomer theisolation gasket782 may be of the same material. In the latter embodiment, theisolation gasket782 and theinsulative body770 may be monolithic, i.e., formed as a single piece. However, theisolation gasket782 is preferably separate from theinsulative body770 so that it may be easily removed for replacement or cleaning.
• While FIG. 10 shows a preferred embodiment of the[0063]isolation gasket782 wherein the isolation gasket is seated entirely on theinsulative body770, FIGS. 8 and 9 show an alternative embodiment. In the latter embodiment, theinsulative body770 is partially machined away to expose the upper surface of the connectingmember776 and theisolation gasket782 is disposed thereon. Thus, theisolation gasket782 contacts a portion of the connectingmember776. This design requires less material to be used for theinner contact pads772 which may be advantageous where material costs are significant such as when theinner contact pads772 comprise gold. Persons skilled in the art will recognize other embodiments which do not depart from the scope of the present invention.
• During processing, the[0064]isolation gasket782 maintains contact with a peripheral portion of the substrate plating surface and is compressed to provide a seal between the remainingcathode contact ring466 and the substrate. The seal prevents the electrolyte from contacting the edge and backside of the substrate. As noted above, maintaining a clean contact surface is necessary to achieving high plating repeatability. Previous contact ring designs did not provide consist plating results because contact surface topography varied over time. The contact ring of the present invention eliminates, or least minimizes, deposits which would otherwise accumulate on theinner contact pads772 and change their characteristics thereby producing highly repeatable, consistent, and uniform plating across the substrate plating surface.
• FIG. 11 is a simplified schematic diagram representing a possible configuration of the electrical circuit for the[0065]contact ring466. To provide a uniform current distribution between the conductingmembers765, anexternal resistor700 is connected in series with each of the conductingmembers765. Preferably, the resistance value of the external resistor700 (represented as R_EXT) is much greater than the resistance of any other component of the circuit. As shown in FIG. 11, the electrical circuit through each conductingmember765 is represented by the resistance of each of the components connected in series with thepower supply702. R_Erepresents the resistance of the electrolyte, which is typically dependent on the distance between the anode and the cathode contact ring and the composition of the electrolyte chemistry. Thus, R_Arepresents the resistance of the electrolyte adjacent the substrate plating surface754. R_Srepresents the resistance of the substrate plating surface754, and R_Crepresents the resistance of thecathode conducting members765 plus the constriction resistance resulting at the interface between theinner contact pads772 and the substrate plating layer754. Generally, the resistance value of the external resistor (R_EXT) is at least as much as ΣR (where ΣR equals the sum of R_E, R_A, R_SR_C). Preferably, the resistance value of the external resistor (R_EXT) is much greater than ΣR such that ΣR is negligible and the resistance of each series circuit approximates R_EXT.
• Typically, one power supply is connected to all of the[0066]outer contact pads780 of thecathode contact ring466, resulting in parallel circuits through theinner contact pads772. However, as the inner contact pad-to-substrate interface resistance varies with eachinner contact pad772, more current will flow, and thus more plating will occur, at the site of lowest resistance. However, by placing an external resistor in series with each conductingmember765, the value or quantity of electrical current passed through each conductingmember765 becomes controlled mainly by the value of the external resistor. As a result, the variations in the electrical properties between each of theinner contact pads772 do not affect the current distribution on the substrate, and a uniform current density results across the plating surface which contributes to a uniform plating thickness. The external resistors also provide a uniform current distribution between different substrates of a process-sequence.
• Although the[0067]contact ring466 of the present invention is designed to resist deposit buildup on theinner contact pads772, over multiple substrate plating cycles the substrate-pad interface resistance may increase, eventually reaching an unacceptable value. An electronic sensor/alarm704 can be connected across theexternal resistor700 to monitor the voltage/current across the external resistor to address this problem. If the voltage/current across theexternal resistor700 falls outside of a preset operating range that is indicative of a high substrate-pad resistance, the sensor/alarm704 triggers corrective measures such as shutting down the plating process until the problems are corrected by an operator. Alternatively, a separate power supply can be connected to each conductingmember765 and can be separately controlled and monitored to provide a uniform current distribution across the substrate. A very smart system (VSS) may also be used to modulate the current flow. The VSS typically comprises a processing unit and any combination of devices known in the industry used to supply and/or control current such as variable resistors, separate power supplies, etc. As the physiochemical, and hence electrical, properties of theinner contact pads772 change over time, the VSS processes and analyzes data feedback. The data is compared to pre-established setpoints and the VSS then makes appropriate current and voltage alterations to ensure uniform deposition.
• Referring to FIG. 6 and FIG. 12, preferably, the[0068]wafer holder464 is positioned above thecathode contact ring466 and comprises a bladder assembly470 that provides pressure to the backside of a wafer and ensures electrical contact between the wafer plating surface and thecathode contact ring466. The inflatable bladder assembly470 is disposed on awafer holder plate832. Abladder836 disposed on a lower surface of thewafer holder plate832 is thus located opposite and adjacent to the contacts on thecathode contact ring466 with thesubstrate821 interposed therebetween. Afluid source838 supplies a fluid, i.e., a gas or liquid, to thebladder836 allowing thebladder836 to be inflated to varying degrees.
• Referring now to FIGS. 12, 12A, and[0069]13, the details of the bladder assembly470 will be discussed. Thewafer holder plate832 is shown as substantially disc-shaped having anannular recess840 formed on a lower surface and a centrally disposedvacuum port841. One ormore inlets842 are formed in thewafer holder plate832 and lead into the relatively enlargedannular mounting channel843 and theannular recess840. Quick-disconnect hoses844 couple thefluid source838 to theinlets842 to provide a fluid thereto. Thevacuum port841 is preferably attached to a vacuum/pressure pumping system859 adapted to selectively supply a pressure or create a vacuum at a backside of thesubstrate821. Thepumping system859, shown in FIG. 12, comprises a pump845, across-over valve847, and a vacuum ejector849 (commonly known as a venturi). One vacuum ejector that may be used to advantage in the present invention is available from SMC Pneumatics, Inc., of Indianapolis, Ind. The pump845 may be a commercially available compressed gas source and is coupled to one end of a hose851, the other end of the hose851 being coupled to thevacuum port841. The hose851 is split into apressure line853 and avacuum line855 having thevacuum ejector849 disposed therein. Fluid flow is controlled by thecross-over valve847 which selectively switches communication with the pump845 between thepressure line853 and thevacuum line855. Preferably, the cross-over valve has an OFF setting whereby fluid is restricted from flowing in either direction through hose851. A shut-offvalve861 disposed in hose851 prevents fluid from flowing frompressure line855 upstream through thevacuum ejector849. The desired direction of fluid flow is indicated by arrows.
• Persons skilled in the art will readily appreciate other arrangements which do not depart from the spirit and scope of the present invention. For example, where the[0070]fluid source838 is a gas supply it may be coupled to hose851 thereby eliminating the need for a separate compressed gas supply, i.e., pump845. Further, a separate gas supply and vacuum pump may supply the backside pressure and vacuum conditions. While it is preferable to allow for both a backside pressure as well as a backside vacuum, a simplified embodiment may comprise a pump capable of supplying only a backside vacuum. However, as will be explained below, deposition uniformity may be improved where a backside pressure is provided during processing. Therefore, an arrangement such as the one described above including a vacuum ejector and a cross-over valve is preferred.
• Referring now to FIGS. 12A and 14, a substantially circular ring-shaped[0071]manifold846 is disposed in theannular recess840. The manifold846 comprises a mountingrail852 disposed between aninner shoulder848 and anouter shoulder850. The mountingrail852 is adapted to be at least partially inserted into theannular mounting channel843. A plurality offluid outlets854 formed in the manifold846 provide communication between theinlets842 and thebladder836.Seals837, such as O-rings, are disposed in theannular manifold channel843 in alignment with theinlet842 andoutlet854 and secured by thewafer holder plate832 to ensure an airtight seal. Conventional fasteners (not shown) such as screws may be used to secure the manifold846 to thewafer holder plate832 via cooperating threaded bores (not shown) formed in the manifold846 and thewafer holder plate832.
• Referring now to FIG. 15, the[0072]bladder836 is shown, in section, as an elongated substantially semi-tubular piece of material having annular lip seals856, or nodules, at each edge. In FIG. 12A, the lip seals856 are shown disposed on theinner shoulder848 and theouter shoulder850. A portion of thebladder836 is compressed against the walls of theannular recess840 by the manifold846 which has a width slightly less (e.g. a few millimeters) than theannular recess840. Thus, the manifold846, thebladder836, and theannular recess840 cooperate to form a fluid-tight seal. To prevent fluid loss, thebladder836 is preferably comprised of some fluid impervious material such as silicon rubber or any comparable elastomer which is chemically inert with respect to the electrolyte and exhibits reliable elasticity. Where needed a compliant covering857 may be disposed over thebladder836, as shown in FIG. 15, and secured by means of an adhesive or thermal bonding. The covering857 preferably comprises an elastomer such as Viton™, buna rubber or the like, which may be reinforced by Kevlar™, for example. In one embodiment, the covering857 and thebladder836 comprise the same material. The covering857 has particular application where thebladder836 is liable to rupturing. Alternatively, thebladder836 thickness may simply be increased during its manufacturing to reduce the likelihood of puncture.
• The precise number of[0073]inlets842 andoutlets854 may be varied according to the particular application without deviating from the present invention. For example, while FIG. 12 shows two inlets with corresponding outlets, an alternative embodiment could employ a single fluid inlet which supplies fluid to thebladder836.
• In operation, the[0074]substrate821 is introduced into the container body802 by securing it to the lower side of thewafer holder plate832. This is accomplished by engaging the pumping system159 to evacuate the space between thesubstrate821 and thewafer holder plate832 viaport841 thereby creating a vacuum condition. Thebladder836 is then inflated by supplying a fluid such as air or water from thefluid source838 to theinlets842. The fluid is delivered into thebladder836 via themanifold outlets854, thereby pressing thesubstrate821 uniformly against the contacts of thecathode contact ring466. The electroplating process is then carried out. An electrolyte is then pumped into theprocess kit420 toward thesubstrate821 to contact the exposedsubstrate plating surface820. The power supply provides a negative bias to thesubstrate plating surface820 via thecathode contact ring466. As the electrolyte is flowed across thesubstrate plating surface820, ions in the electrolytic solution are attracted to thesurface820 and deposit on thesurface820 to form the desired film.
• Because of its flexibility, the[0075]bladder836 deforms to accommodate the asperities of the substrate backside and contacts of thecathode contact ring466 thereby mitigating misalignment with the conductingcathode contact ring466. Thecompliant bladder836 prevents the electrolyte from contaminating the backside of thesubstrate821 by establishing a fluid tight seal at a perimeter portion of a backside of thesubstrate821. Once inflated, a uniform pressure is delivered downward toward thecathode contact ring466 to achieve substantially equal force at all points where thesubstrate821 andcathode contact ring466 interface. The force can be varied as a function of the pressure supplied by thefluid source838. Further, the effectiveness of the bladder assembly470 is not dependent on the configuration of thecathode contact ring466. For example, while FIG. 12 shows a pin configuration having a plurality of discrete contact points, thecathode contact ring466 may also be a continuous surface.
• Because the force delivered to the[0076]substrate821 by thebladder836 is variable, adjustments can be made to the current flow supplied by thecontact ring466. As described above, an oxide layer may form on thecathode contact ring466 and act to restrict current flow. However, increasing the pressure of thebladder836 may counteract the current flow restriction due to oxidation. As the pressure is increased, the malleable oxide layer is compromised and superior contact between thecathode contact ring466 and thesubstrate821 results. The effectiveness of thebladder836 in this capacity may be further improved by altering the geometry of thecathode contact ring466. For example, a knife-edge geometry is likely to penetrate the oxide layer more easily than a dull rounded edge or flat edge.
• Additionally, the fluid tight seal provided by the[0077]inflated bladder836 allows the pump845 to maintain a backside vacuum or pressure either selectively or continuously, before, during, and after processing. Generally, however, the pump845 is run to maintain a vacuum only during the transfer of substrates to and from theelectroplating process cell400 because it has been found that thebladder836 is capable of maintaining the backside vacuum condition during processing without continuous pumping. Thus, while inflating thebladder836, as described above, the backside vacuum condition is simultaneously relieved by disengaging thepumping system859, e.g., by selecting an OFF position on thecross-over valve847. Disengaging thepumping system859 may be abrupt or comprise a gradual process whereby the vacuum condition is ramped down. Ramping allows for a controlled exchange between the inflatingbladder836 and the simultaneously decreasing backside vacuum condition. This exchange may be controlled manually or by computer.
• As described above, continuous backside vacuum pumping while the[0078]bladder836 is inflated is not needed and may actually cause thesubstrate820 to buckle or warp leading to undesirable deposition results. It may, however, be desirable to provide a backside pressure to thesubstrate820 in order to cause a “bowing” effect of the substrate to be processed. The inventors of the present invention have discovered that bowing results in superior deposition. Thus,pumping system859 is capable of selectively providing a vacuum or pressure condition to the substrate backside. For a 200 mm wafer a backside pressure up to 5 psi is preferable to bow the substrate. Because substrates typically exhibit some measure of pliability, a backside pressure causes the substrate to bow or assume a convex shape relative to the upward flow of the electrolyte. The degree of bowing is variable according to the pressure supplied by pumpingsystem859.
• Those skilled in the art will readily recognize other embodiments which are contemplated by the present invention. For example, while FIG. 12A shows a[0079]preferred bladder836 having a surface area sufficient to cover a relatively small perimeter portion of the substrate backside at a diameter substantially equal to thecathode contact ring466, the bladder assembly470 may be geometrically varied. Thus, the bladder assembly may be constructed using more fluid impervious material to cover an increased surface area of thesubstrate821.
• Referring back to FIG. 6, a cross sectional view of an[0080]electroplating process cell400, thewafer holder assembly450 is positioned above theprocess kit420. Theprocess kit420 generally comprises abowl430, acontainer body472, ananode assembly474 and afilter476. Preferably, theanode assembly474 is disposed below thecontainer body472 and attached to a lower portion of thecontainer body472, and thefilter476 is disposed between theanode assembly474 and thecontainer body472. Thecontainer body472 is preferably a cylindrical body comprised of an electrically insulative material, such as ceramics, plastics, plexiglass (acrylic), lexane, PVC, CPVC, and PVDF. Alternatively, thecontainer body472 can be made from a metal, such as stainless steel, nickel and titanium, which is coated with an insulating layer, such as teflon, PVDF, plastic, rubber and other combinations of materials that do not dissolve in the electrolyte and can be electrically insulated from the electrodes (i.e., the anode and cathode of the electroplating system). Thecontainer body472 is preferably sized and adapted to conform to the wafer plating surface and the shape of the of a wafer being processed through the system, typically circular or rectangular in shape. One preferred embodiment of thecontainer body472 comprises a cylindrical ceramic tube having an inner diameter that has about the same dimension as or slightly larger than the wafer diameter. The inventors have discovered that the rotational movement typically required in typical electroplating systems is not required to achieve uniform plating results when the size of the container body conforms to about the size of the wafer plating surface.
• An upper portion of the[0081]container body472 extends radially outwardly to form anannular weir478. Theweir478 extends over theinner wall446 of theelectrolyte collector440 and allows the electrolyte to flow into theelectrolyte collector440. The upper surface of theweir478 preferably matches the lower surface of thecathode contact ring466. Preferably, the upper surface of theweir478 includes an inner annularflat portion480, a middleinclined portion482 and an outer declinedportion484. When a wafer is positioned in the processing position, the wafer plating surface is positioned above the cylindrical opening of thecontainer body472, and a gap for electrolyte flow is formed between the lower surface of thecathode contact ring466 and the upper surface of theweir478. The lower surface of thecathode contact ring466 is disposed above the innerflat portion480 and the middle inclined portion of theweir478. The outer declinedportion484 is sloped downwardly to facilitate flow of the electrolyte into theelectrolyte collector440.
• A lower portion of the[0082]container body472 extends radially outwardly to form a lowerannular flange486 for securing thecontainer body472 to thebowl430. The outer dimension (i.e., circumference) of theannular flange486 is smaller than the dimensions of theopening444 and the inner circumference of theelectrolyte collector440 to allow removal and replacement of theprocess kit420 from theelectroplating process cell400. Preferably, a plurality ofbolts488 are fixedly disposed on theannular flange486 and extend downwardly through matching bolt holes on thebowl430. A plurality ofremovable fastener nuts490 secure theprocess kit420 onto thebowl430. Aseal487, such as an elastomer O-ring, is disposed betweencontainer body472 and thebowl430 radially inwardly from thebolts488 to prevent leaks from theprocess kit420. The nuts/bolts combination facilitates fast and easy removal and replacement of the components of theprocess kit420 during maintenance.
• Preferably, the[0083]filter476 is attached to and completely covers the lower opening of thecontainer body472, and theanode assembly474 is disposed below thefilter476. Aspacer492 is disposed between thefilter476 and theanode assembly474. Preferably, thefilter476, thespacer492, and theanode assembly474 are fastened to a lower surface of thecontainer body472 using removable fasteners, such as screws and/or bolts. Alternatively, thefilter476, thespacer492, and theanode assembly474 are removably secured to thebowl430.
• The[0084]anode assembly474 preferably comprises a consumable anode that serves as a metal source in the electrolyte. Alternatively, theanode assembly474 comprises a non-consumable anode, and the metal to be electroplated is supplied within the electrolyte from the electrolyte replenishing system600. As shown in FIG. 6, theanode assembly474 is a self-enclosed module having aporous anode enclosure494 preferably made of the same metal as the metal to be electroplated, such as copper. Alternatively, theanode enclosure494 is made of porous materials, such as ceramics or polymeric membranes. Asoluble metal496, such as high purity copper for electro-chemical deposition of copper, is disposed within theanode enclosure494. Thesoluble metal496 preferably comprises metal particles, wires or a perforated sheet. Theporous anode enclosure494 also acts as a filter that keeps the particulates generated by the dissolving metal within theanode enclosure494. As compared to a non-consumable anode, the consumable (i.e., soluble) anode provides gas-generation-free electrolyte and minimizes the need to constantly replenish the metal in the electrolyte.
• An[0085]anode electrode contact498 is inserted into theanode enclosure494 to provide electrical connection to thesoluble metal496 from a power supply. Preferably, theanode electrode contact498 is made from a conductive material that is insoluble in the electrolyte, such as titanium, platinum and platinum-coated stainless steel. Theanode electrode contact498 extends through thebowl430 and is connected to an electrical power supply. Preferably, the anodeelectrical contact498 includes a threadedportion497 for afastener nut499 to secure the anodeelectrical contact498 to thebowl430, and aseal495, such as a elastomer washer, is disposed between thefastener nut499 and thebowl430 to prevent leaks from theprocess kit420.
• The[0086]bowl430 generally comprises acylindrical portion502 and abottom portion504. An upperannular flange506 extends radially outwardly from the top of thecylindrical portion502. The upperannular flange506 includes a plurality ofholes508 that matches the number ofbolts488 from the lowerannular flange486 of thecontainer body472. To secure the upperannular flange506 of thebowl430 and the lowerannular flange486 of thecontainer body472, thebolts488 are inserted through theholes508, and thefastener nuts490 are fastened onto thebolts488. Preferably, the outer dimension (i.e., circumference) of the upperannular flange506 is about the same as the outer dimension (i.e., circumference) of the lowerannular flange486. Preferably, the lower surface of the upperannular flange506 of thebowl430 rests on a support flange of themainframe214 when theprocess kit420 is positioned on themainframe214.
• The inner circumference of the[0087]cylindrical portion502 accommodates theanode assembly474 and thefilter476. Preferably, the outer dimensions of thefilter476 and theanode assembly474 are slightly smaller than the inner dimension of thecylindrical portion502 to force a substantial portion of the electrolyte to flow through theanode assembly474 first before flowing through thefilter476. Thebottom portion504 of thebowl430 includes anelectrolyte inlet510 that connects to an electrolyte supply line from theelectrolyte replenishing system220. Preferably, theanode assembly474 is disposed about a middle portion of thecylindrical portion502 of thebowl430 to provide a gap for electrolyte flow between theanode assembly474 and theelectrolyte inlet510 on thebottom portion504.
• The[0088]electrolyte inlet510 and the electrolyte supply line are preferably connected by a releasable connector that facilitates easy removal and replacement of theprocess kit420. When theprocess kit420 needs maintenance, the electrolyte is drained from theprocess kit420, and the electrolyte flow in the electrolyte supply line is discontinued and drained. The connector for the electrolyte supply line is released from theelectrolyte inlet510, and the electrical connection to theanode assembly474 is also disconnected. Thehead assembly410 is raised or rotated to provide clearance for removal of theprocess kit420. Theprocess kit420 is then removed from themainframe214, and a new or reconditioned process kit is replaced into themainframe214.
• Alternatively, the[0089]bowl430 can be secured onto the support flange of themainframe214, and thecontainer body472 along with the anode and the filter are removed for maintenance. In this case, the nuts securing theanode assembly474 and thecontainer body472 to thebowl430 are removed to facilitate removal of theanode assembly474 and thecontainer body472. New or reconditionedanode assembly474 andcontainer body472 are then replaced into themainframe214 and secured to thebowl430.
• FIG. 16 is a schematic diagram of an electrolyte replenishing system[0090]600. The electrolyte replenishing system600 generally comprises amain electrolyte tank602, one ormore filter tanks604, one ormore source tanks606, one or more fluid pumps608. The electrolyte replenishing system600 is connected to acontroller610 for controlling the composition of the electrolyte and the operation of the electrolyte replenishing system600. Preferably, thecontroller610 is independently operable but integrated with thecontrol system222 of theelectroplating system platform200.
• The electrolyte replenishing system[0091]600 provides the electrolyte to the electroplating process cells for the electroplating process. The electrolyte replenishing system600 as shown in FIG. 16 is the same as theelectrolyte replenishing system220 as shown in FIGS. 2 and 3. Themain electrolyte tank602 includes anelectrolyte supply line612 that is connected to each of the electroplating process cells through one or more fluid pumps608. The electrolyte replenishing system600 includes a plurality of source tanks that are connected to themain tank602 to supply the chemicals needed for composing the electrolyte. The source tanks typically include a deionized water source tank and copper sulfate source tank for composing the electrolyte. The deionized water source tank preferably also provides deionized water to the system for cleaning the system during maintenance.
• The electrolyte replenishing system[0092]600 also includes a plurality offilter tanks604 connected to themain tank602. Preferably, anelectrolyte return line614 is connected between each of the process cells and one ormore filter tanks604. Thefilter tanks604 remove the undesired contents in the used electrolyte before returning the electrolyte to themain tank602 for re-use. Themain tank602 is preferably connected to one or more of thefilter tanks604 to facilitate re-circulation and filtration of the electrolyte in themain tank602 through thefilter tanks604. By re-circulating the electrolyte from themain tank602 through thefilter tanks604, the undesired contents in the electrolyte are continuously removed by thefilter tanks604.
• Preferably, the electrolyte replenishing system[0093]600 includes achemical analyzer616 that provides real time chemical analysis of the chemical composition of the electrolyte. The information from thechemical analyzer616 is inputted to thecontroller610 which uses the information to provide real time adjustment of the source chemical replenishment rates to maintain constant chemical composition of the electrolyte throughout the electroplating process. Additionally, the chemical analyzer preferably provides an analysis of organic and inorganic constituents of the electrolyte.
• The electrolyte replenishing system[0094]600 preferably also includes one or more additional tanks for storage of chemicals for wafer cleaning system, such as the SRD station. The electrolyte replenishing system600 also includes anelectrolyte waste drain620 connected to an electrolytewaste disposal system622 for safe disposal of used electrolytes, chemicals and other fluids used in the electroplating system. Preferably, the electroplating cells include a direct line connection to the electrolyte waste drain or the electrolyte waste disposal system to drain the electroplating cell without returning the electrolyte through the electrolyte replenishing system600. The electrolyte replenishing system600 preferably also includes a bleed off connection to bleed off excess electrolyte to the electrolyte waste drain. Optionally, the electrolyte replenishing system600 includes connections to additional or external electrolyte processing system to provide additional electrolyte supplies to the electroplating system. Preferably, the electrolyte replenishing system600 includes double-contained piping for hazardous material connections to provide safe transport of the chemicals throughout the system. The electrolyte replenishing system600 preferably controls the temperature of the electrolyte through aheat exchanger624 or a heater/chiller disposed in thermal connection with the main tank. Theheat exchanger624 is connected to and operated by thecontroller610.
• FIG. 17 is a cross sectional view of a rapid thermal anneal chamber according to the invention. The rapid thermal anneal (RTA)[0095]chamber211 is preferably connected to theloading station210, and substrates are transferred into and out of theRTA chamber211 by the loadingstation transfer robot228. The electroplating system, as shown in FIGS. 2 and 3, preferably comprises twoRTA chambers211 disposed on opposing sides of theloading station210, corresponding to the symmetric design of theloading station210. Thermal anneal process chambers are generally well known in the art, and rapid thermal anneal chambers are typically utilized in substrate processing systems to enhance the properties of the deposited materials. The invention contemplates utilizing a variety of thermal anneal chamber designs, including hot plate designs and heat lamp designs, to enhance the electroplating results. One particular thermal anneal chamber useful for the present invention is the WxZ chamber available from Applied materials, Inc., located in Santa Clara, Calif. Although the invention is described using a hot plate rapid thermal anneal chamber, the invention contemplates application of other thermal anneal chambers as well.
• The[0096]RTA chamber211 generally comprises anenclosure902, aheater plate904, aheater907 and a plurality of substrate support pins906. Theenclosure902 includes abase908, asidewall910 and a top912. Preferably, acold plate913 is disposed below the top912 of the enclosure. Alternatively, the cold plate is integrally formed as part of the top912 of the enclosure. Preferably, areflector insulator dish914 is disposed inside theenclosure902 on thebase908. Thereflector insulator dish914 is typically made from a material such as quartz, alumina, or other material that can withstand high temperatures (i.e., greater than about 500° C.), and act as a thermal insulator between theheater907 and theenclosure902. Thedish914 may also be coated with a reflective material, such as gold, to direct heat back to theheater plate906.
• The[0097]heater plate904 preferably has a large mass compared to the substrate being processed in the system and is preferably fabricated from a material such as silicon carbide, quartz, or other materials that do not react with any ambient gases in theRTA chamber211 or with the substrate material. Theheater907 typically comprises a resistive heating element or a conductive/radiant heat source and is disposed between theheated plate906 and thereflector insulator dish914. Theheater907 is connected to apower source916 which supplies the energy needed to heat theheater907. Preferably, athermocouple920 is disposed in aconduit922, disposed through thebase908 anddish914, and extends into theheater plate904. Thethermocouple920 is connected to a controller (i.e., the system controller described below) and supplies temperature measurements to the controller. The controller then increases or decreases the heat supplied by theheater907 according to the temperature measurements and the desired anneal temperature.
• The[0098]enclosure902 preferably includes a coolingmember918 disposed outside of theenclosure902 in thermal contact with thesidewall910 to cool theenclosure902. Alternatively, one or more cooling channels (not shown) are formed within thesidewall910 to control the temperature of theenclosure902. Thecold plate913 disposed on the inside surface of the top912 cools a substrate that is positioned in close proximity to thecold plate913.
• The[0099]RTA chamber211 includes aslit valve922 disposed on thesidewall910 of theenclosure902 for facilitating transfers of substrates into and out of the RTA chamber. Theslit valve922 selectively seals anopening924 on thesidewall910 of the enclosure that communicates with theloading station210. The loading station transfer robot228 (see FIG. 2) transfers substrates into and out of the RTA chamber through theopening924.
• The substrate support pins[0100]906 preferably comprise distally tapered members constructed from quartz, aluminum oxide, silicon carbide, or other high temperature resistant materials. Eachsubstrate support pin906 is disposed within atubular conduit926, preferably made of a heat and oxidation resistant material, that extends through theheater plate904. The substrate support pins906 are connected to alift plate928 for moving the substrate support pins906 in a uniform manner. Thelift plate928 is attached to an to anactuator930, such as a stepper motor, through alift shaft932 that moves thelift plate928 to facilitate positioning of a substrate at various vertical positions within the RTA chamber. Thelift shaft932 extends through thebase908 of theenclosure902 and is sealed by a sealingflange934 disposed around the shaft.
• To transfer a substrate into the[0101]RTA chamber211, theslit valve922 is opened, and the loadingstation transfer robot228 extends its robot blade having a substrate positioned thereon through theopening924 into the RTA chamber. The robot blade of the loadingstation transfer robot228 positions the substrate in the RTA chamber above theheater plate904, and the substrate support pins906 are extended upwards to lift the substrate above the robot blade. The robot blade then retracts out of the RTA chamber, and theslit valve922 closes the opening. The substrate support pins906 are then retracted to lower the substrate to a desired distance from theheater plate904. Optionally, the substrate support pins906 may retract fully to place the substrate in direct contact with the heater plate.
• Preferably, a[0102]gas inlet936 is disposed through thesidewall910 of theenclosure902 to allow selected gas flow into theRTA chamber211 during the anneal treatment process. Thegas inlet936 is connected to agas source938 through avalve940 for controlling the flow of the gas into theRTA chamber211. Agas outlet942 is preferably disposed at a lower portion of thesidewall910 of theenclosure902 to exhaust the gases in the RTA chamber and is preferably connected to a relief/check valve944 to prevent backstreaming of atmosphere from outside of the chamber. Optionally, thegas outlet942 is connected to a vacuum pump (not shown) to exhaust the RTA chamber to a desired vacuum level during an anneal treatment.
• According to the invention, a substrate is annealed in the[0103]RTA chamber211 after the substrate has been electroplated in the electroplating cell and cleaned in the SRD station. Preferably, theRTA chamber211 is maintained at about atmospheric pressure, and the oxygen content inside theRTA chamber211 is controlled to less than about 100 ppm during the anneal treatment process. Preferably, the ambient environment inside theRTA chamber211 comprises nitrogen (N₂) or a combination of nitrogen (N₂) and less than about 4% hydrogen (H₂), and the ambient gas flow into theRTA chamber211 is maintained at greater than 20 liters/min to control the oxygen content to less than 100 ppm. The electroplated substrate is preferably annealed at a temperature between about 200° C. and about 450° C. for between about 30 seconds and 30 minutes, and more preferably, between about 250° C. and about 400° C. for between about 1 minute and 5 minutes. Rapid thermal anneal processing typically requires a temperature increase of at least 50° C. per second. To provide the required rate of temperature increase for the substrate during the anneal treatment, the heater plate is preferably maintained at between about 350° C. and about 450° C., and the substrate is preferably positioned at between about 0 mm (i.e., contacting the heater plate) and about 20 mm from the heater plate for the duration of the anneal treatment process. Preferably, acontrol system222 controls the operation of theRTA chamber211, including maintaining the desired ambient environment in the RTA chamber and the temperature of the heater plate.
• After the anneal treatment process is completed, the substrate support pins[0104]906 lift the substrate to a position for transfer out of theRTA chamber211. Theslit valve922 opens, and the robot blade of the loadingstation transfer robot228 is extended into the RTA chamber and positioned below the substrate. The substrate support pins906 retract to lower the substrate onto the robot blade, and the robot blade then retracts out of the RTA chamber. The loadingstation transfer robot228 then transfers the processed substrate into thecassette232 for removal out of the electroplating processing system. (see FIGS. 2 and 3).
• Referring back to FIG. 2, the[0105]electroplating system platform200 includes acontrol system222 that controls the functions of each component of the platform. Preferably, thecontrol system222 is mounted above themainframe214 and comprises a programmable microprocessor. The programmable microprocessor is typically programmed using a software designed specifically for controlling all components of theelectroplating system platform200. Thecontrol system222 also provides electrical power to the components of the system and includes acontrol panel223 that allows an operator to monitor and operate theelectroplating system platform200. Thecontrol panel223, as shown in FIG. 2, is a stand-alone module that is connected to thecontrol system222 through a cable and provides easy access to an operator. Generally, thecontrol system222 coordinates the operations of theloading station210, theRTA chamber211, theSRD station212, themainframe214 and theprocessing stations218. Additionally, thecontrol system222 coordinates with the controller of the electrolyte replenishing system600 to provide the electrolyte for the electroplating process.
• The following is a description of a typical wafer electroplating process sequence through the[0106]electroplating system platform200 as shown in FIG. 2. A wafer cassette containing a plurality of wafers is loaded into the wafercassette receiving areas224 in theloading station210 of theelectroplating system platform200. A loadingstation transfer robot228 picks up a wafer from a wafer slot in the wafer cassette and places the wafer in thewafer orientor230. Thewafer orientor230 determines and orients the wafer to a desired orientation for processing through the system. The loadingstation transfer robot228 then transfers the oriented wafer from thewafer orientor230 and positions the wafer in one of the wafer slots in the wafer pass-throughcassette238 in theSRD station212. Themainframe transfer robot242 picks up the wafer from the wafer pass-throughcassette238 and positions the wafer for transfer by theflipper robot248. Theflipper robot248 rotates its robot blade below the wafer and picks up wafer from mainframe transfer robot blade. The vacuum suction gripper on the flipper robot blade secures the wafer on the flipper robot blade, and the flipper robot flips the wafer from a face up position to a face down position. Theflipper robot248 rotates and positions the wafer face down in thewafer holder assembly450. The wafer is positioned below thewafer holder464 but above thecathode contact ring466. Theflipper robot248 then releases the wafer to position the wafer into thecathode contact ring466. Thewafer holder464 moves toward the wafer and the vacuum chuck secures the wafer on thewafer holder464. The bladder assembly470 on thewafer holder assembly450 exerts pressure against the wafer backside to ensure electrical contact between the wafer plating surface and thecathode contact ring466.
• The[0107]head assembly452 is lowered to a processing position above theprocess kit420. At this position the wafer is below the upper plane of theweir478 and contacts the electrolyte contained in theprocess kit420. The power supply is activated to supply electrical power (i.e., voltage and current) to the cathode and the anode to enable the electroplating process. The electrolyte is typically continually pumped into the process kit during the electroplating process. The electrical power supplied to the cathode and the anode and the flow of the electrolyte are controlled by thecontrol system222 to achieve the desired electroplating results.
• After the electroplating process is completed, the[0108]head assembly410 raises the wafer holder assembly and removes the wafer from the electrolyte. The vacuum chuck and the bladder assembly of the wafer holder release the wafer from the wafer holder, and the wafer holder is raised to allow the flipper robot blade to pick up the processed wafer from the cathode contact ring. The flipper robot rotates the flipper robot blade above the backside of the processed wafer in the cathode contact ring and picks up the wafer using the vacuum suction gripper on the flipper robot blade. The flipper robot rotates the flipper robot blade with the wafer out of the wafer holder assembly, flips the wafer from a face-down position to a face-up position, and positions the wafer on the mainframe transfer robot blade. The mainframe transfer robot then transfers and positions the processed wafer above theSRD module236. The SRD wafer support lifts the wafer, and the mainframe transfer robot blade retracts away from theSRD module236. The wafer is cleaned in the SRD module using deionized water or a combination of deionized water and a cleaning fluid as described in detail above. The wafer is then positioned for transfer out of the SRD module. The loadingstation transfer robot228 picks up the wafer from theSRD module236 and transfers the processed wafer into theRTA chamber211 for an anneal treatment process to enhance the properties of the deposited materials. The annealed wafer is then transferred out of theRTA chamber211 by theloading station robot228 and placed back into the wafer cassette for removal from the electroplating system. The above-described sequence can be carried out for a plurality of wafers substantially simultaneously in theelectroplating system platform200 of the present invention. Also, the electroplating system according to the invention can be adapted to provide multi-stack wafer processing.
• While the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims which follow.[0109]

Claims (9)

1. An electro-chemical deposition system, comprising:

a) a mainframe having a mainframe wafer transfer robot;

b) a loading station disposed in connection with the mainframe;

c) one or more processing cells disposed in connection with the mainframe;

d) an electrolyte supply fluidly connected to the one or more electrical processing cells;

e) a spin-rinse-dry (SRD) chamber disposed between the loading station and the mainframe; and

f) a thermal anneal chamber disposed adjacent the loading station.

2. The system ofclaim 1 wherein the thermal anneal chamber comprises a rapid thermal anneal chamber having a heater plate.

3. The system ofclaim 2 wherein the heater plate comprises an atmospheric pressure heater plate.

4. The system ofclaim 1, further comprising:

e) a system controller adapted to control operations of one or more components of the electro-chemical deposition system.

5. The system ofclaim 4, wherein the thermal anneal chamber further comprises a gas inlet adapted to introduce one or more gases into the thermal anneal chamber.

6. The system ofclaim 5 wherein the system controller controls the gas inlet to the chamber to provide a chamber environment having an oxygen content of less than 100 parts per million.

7. The system ofclaim 6 wherein the gas inlet is connected to a nitrogen gas source to introduce nitrogen into the chamber.

8. The system ofclaim 6 wherein the gas inlet is connected to a nitrogen gas source and a hydrogen gas source to introduce nitrogen and hydrogen into the chamber, wherein the hydrogen content is maintained at less than about 4%.

9. The system ofclaim 1 wherein the loading station comprises:

i) one or more wafer cassette receiving areas;

ii) one or more loading station wafer transfer robots for transferring a wafer between the loading station and the SRD station and between the loading station and the thermal anneal chamber; and

iii) a wafer orientor.

Images