US20040076762A1 - Plasma processor and plasma processing method - Google Patents
Plasma processor and plasma processing methodDownload PDFInfo
- Publication number
- US20040076762A1 US20040076762A1US10/469,235US46923503AUS2004076762A1US 20040076762 A1US20040076762 A1US 20040076762A1US 46923503 AUS46923503 AUS 46923503AUS 2004076762 A1US2004076762 A1US 2004076762A1
- Authority
- US
- United States
- Prior art keywords
- radio
- frequency power
- plasma processing
- plasma
- application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000003672processing methodMethods0.000titleclaimsdescription9
- 238000012545processingMethods0.000claimsdescription70
- 239000002826coolantSubstances0.000claimsdescription10
- 238000005530etchingMethods0.000abstractdescription44
- 238000000034methodMethods0.000abstractdescription28
- 239000002245particleSubstances0.000abstractdescription18
- 230000005764inhibitory processEffects0.000abstract1
- 235000012431wafersNutrition0.000description68
- 239000007789gasSubstances0.000description33
- 150000002500ionsChemical class0.000description12
- 238000001514detection methodMethods0.000description7
- 229910021420polycrystalline siliconInorganic materials0.000description6
- 230000007547defectEffects0.000description5
- 239000003507refrigerantSubstances0.000description5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-NSilicium dioxideChemical compoundO=[Si]=OVYPSYNLAJGMNEJ-UHFFFAOYSA-N0.000description4
- 238000002474experimental methodMethods0.000description4
- 229910052814silicon oxideInorganic materials0.000description4
- 239000011248coating agentSubstances0.000description3
- 238000000576coating methodMethods0.000description3
- IJGRMHOSHXDMSA-UHFFFAOYSA-NAtomic nitrogenChemical compoundN#NIJGRMHOSHXDMSA-UHFFFAOYSA-N0.000description2
- 230000002950deficientEffects0.000description2
- 238000009616inductively coupled plasmaMethods0.000description2
- 230000002401inhibitory effectEffects0.000description2
- 239000004065semiconductorSubstances0.000description2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-NAspirinChemical compoundCC(=O)OC1=CC=CC=C1C(O)=OBSYNRYMUTXBXSQ-UHFFFAOYSA-N0.000description1
- 230000002411adverseEffects0.000description1
- 238000007796conventional methodMethods0.000description1
- 230000002542deteriorative effectEffects0.000description1
- 230000000694effectsEffects0.000description1
- 238000000295emission spectrumMethods0.000description1
- 238000010030laminatingMethods0.000description1
- 239000007788liquidSubstances0.000description1
- 238000004519manufacturing processMethods0.000description1
- 238000005259measurementMethods0.000description1
- 229910052757nitrogenInorganic materials0.000description1
- 229920002120photoresistant polymerPolymers0.000description1
- 238000005268plasma chemical vapour depositionMethods0.000description1
- 229920001721polyimidePolymers0.000description1
- 230000002265preventionEffects0.000description1
- 230000001737promoting effectEffects0.000description1
- 238000012546transferMethods0.000description1
Images
Classifications
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Definitions
- the present inventionrelates to a plasma processing apparatus and a plasma processing method, more particularly, to those suitable for use when an RF power is applied to a top and a bottom electrode.
- Some conventional plasma processing apparatususe an electrostatic chuck in order to fix a wafer in a chamber.
- a high DC voltageis applied to the electrostatic chuck to cause a Coulomb force to act on the wafer, thereby fixing the wafer.
- the application of the high DC voltage to the electrostatic chuck under the condition without any plasmacauses the surface of the wafer to adsorb particles due to the Coulomb force acting on the wafer. Therefore, at the start of the process, the high DC voltage to the electrostatic chuck is turned on after an RF power is turned on, and at the completion of the process, the RF power is turned off after the high DC voltage to the electrostatic chuck is turned off, thereby preventing the high DC voltage from being applied to the electrostatic chuck under the condition without any plasma to reduce the adhesion of the particles to the surface of the wafer.
- An aspect of the present inventionis characterized in that it includes: a step of fixing a wafer via an electrostatic chuck; a step of applying a first radio-frequency power having a first frequency and a second radio-frequency power having a second frequency lower than the first frequency to thereby plasma-processing the wafer; a step of maintaining plasma discharge within a range in which the plasma processing does not progress after the plasma processing is finished; a step of stopping supply of a coolant gas supplied to a back face of the wafer via the electrostatic chuck; a step of stopping application of a direct-current voltage to the electrostatic chuck; and a step of stopping the plasma discharge after stopping the application of the direct-current voltage.
- This structurecan prevent the progress of the plasma processing even when the plasma discharge is maintained after the plasma processing is finished. Consequently, even when the application of the direct-current voltage to the electrostatic chuck is stopped with the plasma discharge being maintained, etching does not further progress after the completion of the plasma processing, which makes it possible to stop the application of the direct-current voltage while inhibiting the adhesion of particles to the wafer.
- Another aspect of the present inventionis characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the application of the second radio-frequency power is stopped and the first radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress.
- the plasma dischargecan be maintained only by controlling the first radio-frequency power, so that the control can be simplified.
- Still another aspect of the present inventionis characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the application of the first radio-frequency power is stopped and the second radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress.
- Yet another aspect of the present inventionis characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the first radio-frequency power and the second radio-frequency power are controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress, and that, in the step of stopping the plasma discharge, the application of the second radio-frequency power is stopped after the first radio-frequency power is stopped.
- the plasma dischargecan be maintained within the range in which the plasma processing does not progress while plasma density and ion energy are both controlled, which makes it possible to further reduce the adhesion of particles and the occurrence of over-etching and to reduce the charge-up damage.
- Yet another aspect of the present inventionis characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the second radio-frequency power is maintained as it is and the first radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress, and that, in the step of stopping the plasma discharge, the application of the second radio-frequency power is stopped after the application of the first radio-frequency power is stopped.
- This structurecan prevent the plasma discharge from being maintained under the condition in which the ion energy is not controlled, so that the charge-up damage can be reduced.
- a plasma processing methodincluding: applying a first radio-frequency power having a first frequency and a second radio-frequency power having a second frequency lower than the first frequency to thereby perform plasma processing, the method characterized in that the first radio-frequency power is applied after the second radio-frequency power is applied.
- the methodcharacterized in that plasma discharge under the condition in which ion energy is not controlled can be prevented also at the start of the application of the radio-frequency powers, so that the charge-up damage can be reduced.
- Yet another aspect of the present inventionis characterized in that it further includes: a step of stopping the application of the second radio-frequency power after the application of the first radio-frequency power is stopped.
- This structurecan prevent the plasma discharge under the condition in which the ion energy is not controlled, not only when the application of the radio-frequency power is started but also when the application of the radio-frequency power is stopped, so that the charge-up damage can be further reduced.
- Yet another aspect of the present inventionis characterized in that the first radio-frequency power is applied to a top electrode and the second radio-frequency power is applied to a bottom electrode.
- Yet another aspect of the present inventionis characterized in that the first radio-frequency power and the second radio-frequency power are applied to a bottom electrode.
- Yet another aspect of the present inventionis characterized in that it includes: an electrostatic chuck to fix a wafer on a susceptor; a direct current voltage source to apply a direct current voltage to the electrostatic chuck; a plasma generating unit to generate plasma in a chamber; a plasma discharge control unit to maintain plasma discharge within a range in which the plasma processing does not progress, after the plasma processing is finished; and a direct current voltage stopping unit to stop the application of the direct current voltage to the electrostatic chuck at a certain point in time during which the plasma discharge is maintained.
- the plasma generating unitincludes: a top electrode; a bottom electrode; a top power applying unit to apply a radio-frequency power to the top electrode; and a bottom power applying unit to apply a radio-frequency power to the bottom electrode, and that the plasma discharge control unit maintains the plasma discharge within the range in which the plasma processing does not progress, and controls the application of the radio-frequency power to the bottom electrode to be stopped after controlling the application of the radio-frequency power to the top electrode to be stopped.
- the plasma generating unitincludes: a top electrode; a bottom electrode; a first power applying unit to apply a first radio-frequency power having a first frequency to the top electrode; and a second power applying unit to apply a second radio-frequency power having a second frequency lower than the first frequency to the top electrode, and that the plasma discharge control unit maintains the plasma discharge within the range in which the plasma processing does not progress, and controls the application of the second radio-frequency power to be stopped after controlling the application of the first radio-frequency power to be stopped.
- This structuremakes it possible to maintain the plasma discharge within the range in which the plasma processing does not progress while ion energy is controlled, so that the adhesion of particles to the wafer can be inhibited without being accompanied by the charge-up damage.
- Yet another aspect of the present inventionis characterized in that it further includes a coolant gas supply unit to supply a coolant gas to a back face of the wafer via the electrostatic chuck; and a coolant gas stopping unit to stop the supply of the coolant gas before the application of the direct current voltage to the electrostatic chuck is stopped, after the plasma processing is finished.
- This structuremakes it possible to lower the pressure given to the back face of the wafer before the chucking of the wafer is stopped, so that failure in chucking the wafer can be prevented.
- FIG. 1is a cross sectional view showing the schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.
- FIG. 2A and FIG. 2Bare views showing the comparison between the plasma processing sequence according to a first embodiment of the present invention and that according to a conventional example.
- FIG. 3is a view showing an experiment example of the plasma processing sequence according to an embodiment of the present invention.
- FIG. 4A, FIG. 4B, and FIG. 4Care views showing the plasma processing sequence according to second to fourth embodiments of the present invention.
- FIG. 5A and FIG. 5Bare views showing the comparison between the plasma processing sequence according to a fifth embodiment of the present invention and that according to the conventional example.
- FIG. 1is a cross sectional view showing the schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.
- a top electrode 2 and a susceptor 3are provided in a process chamber 1 , and this susceptor 3 also serves as a bottom electrode.
- Gas blowout ports 2 a through which an etching gas is introduced into the process chamber 1are provided in the top electrode 2 .
- the susceptor 3is supported on a susceptor supporting table 4 and the susceptor supporting table 4 is held in the process chamber 1 via an insulating plate 5 .
- radio-frequency power sources 11 , 12are connected to the top electrode 2 and the susceptor 3 respectively to plasmatize the etching gas introduced into the process chamber 1 .
- a main function of the top electrode 2is to ionize gas molecules introduced into the process chamber 1 , by a radio-frequency power applied thereto from the radio-frequency power source 11 , thereby generating plasma.
- a main function of the bottom electrode serving also as the susceptor 3is to control the energy of ions incident on a wafer W without changing plasma density or a radical composition ratio, by a radio-frequency power that is applied from the radio-frequency power source 12 and that has a frequency of 13.56 MHz or lower, which is equal to or lower than that of the radio-frequency power applied by the radio-frequency power source 11 .
- the frequencies of the radio-frequency power sources 11 , 12the combination such as 100 MHz and 13.56 MHz, 100 MHz and 3.2 MHz, 60 MHz and 13.56 MHz, 60 MHz and 2 MHz, 27.12 MHz and 800 KHz, and 13.56 MHz and 13.56 MHz can be used. Note that the combination of 60 MHz and 13.56 MHz is used in this example.
- a refrigerant chamber 10is provided in the susceptor supporting table 4 and a refrigerant such as liquid nitrogen circulates in the refrigerant chamber 10 via a refrigerant supply pipe 10 a and a refrigerant discharge pipe 10 b .
- a refrigerantsuch as liquid nitrogen circulates in the refrigerant chamber 10 via a refrigerant supply pipe 10 a and a refrigerant discharge pipe 10 b .
- Cold heat generated from hereis transferred to the wafer W via the susceptor supporting table 4 and the susceptor 3 , so that the wafer W can be cooled.
- An electrostatic chuck 6is provided on the susceptor 3 .
- the electrostatic chuck 6has such a structure that, for example, a conductive layer 7 is sandwiched by polyimide films 8 a , 8 b .
- a high-voltage DC power source 13is connected to the conductive layer 7 , and the application of a DC high voltage to the conductive layer 7 causes a Coulomb force to act on the wafer W, so that the wafer W can be fixed onto the susceptor 3 .
- a gas passage 9 through which a He gas is introducedis formed in the susceptor 3 and the electrostatic chuck 6 .
- the gas passage 9is connected to a He gas supply source 14 via an opening/closing valve 14 a and a flow rate adjusting valve 14 b , and is connected to a vacuum pump 16 via a flow rate adjusting valve 15 .
- the process chamber 1has a gas supply pipe 1 a and an exhaust pipe 1 b , and the gas supply pipe 1 a is connected to a gas supply source.
- the exhaust pipe 1 bis connected to a vacuum pump, and when the inside of the process chamber 1 is exhausted by this vacuum pump, the pressure in the process chamber 1 can be adjusted to, for example several Pa.
- An end point detector 17is connected to the process chamber 1 .
- An emission spectrum radiated from the wafer Wis monitored through the use of this end point detector 17 , so that the end point of etching can be detected.
- etching depthmay be obtained from the phase of the intensity of a reflected interference light after the wafer W is irradiated with light having one waveform or two different waveforms or more.
- FIG. 2A and FIG. 2Bare views showing the comparison between the plasma processing sequence according to a first embodiment of the present invention and that of a conventional example.
- EPDdenotes the end point detection by the end point detector 17
- Top RFdenotes the RF power application to the top electrode 2
- Bottom RFdenotes the RF power application to the susceptor 3
- HVdenotes ON/OFF of the electrostatic chuck 6
- Back Hedenotes the introduction of the He gas to the back face of the wafer W, respectively.
- the wafer Wis placed on the susceptor 3 when it is to be plasma-processed. Then, the inside of the process chamber 1 is exhausted, and the etching gas is introduced into the process chamber 1 while the pressure inside the process chamber 1 is adjusted.
- the RF power from the radio-frequency power source 11is applied to the top electrode 2 (t 2 )
- the RF power from the radio-frequency power source 12is applied to the susceptor 3 (t 3 ), to thereby plasmatize the etching gas and control the energy of ions incident on the wafer W.
- the high-voltage DC power source 13 (HV)is turned on to fix the wafer W by the electrostatic chuck 6 , and the opening/closing valve 14 a is opened to have the He gas 14 (Back He) emitted to the back face of the wafer W, thereby controlling the temperature of the wafer W.
- the RF poweris applied to the susceptor 3 and the high-voltage DC power source 13 is turned on, so that the application of the high DC voltage to the electrostatic chuck 6 under the condition without any plasma can be prevented, which makes it possible to inhibit the adhesion of particles to the surface of the wafer W.
- the end point detector 17detects the end point (t 5 )
- the RF power (Bottom RF) from the radio-frequency power source 12is turned off (t 5 ) and the supply of the He gas 14 to the back face of the wafer W is stopped (t 5 ).
- the RF power (Top RF) from the radio-frequency power source 11is controlled to a value within a range in which etching does not progress and the plasma discharge can be maintained, for example, 200 W or lower (t 5 ).
- the end point detecting methoda method of detecting the end point based on the measurement result of the etching time may be adopted, besides the method using the end point detector 17 .
- the high-voltage DC power source 13is turned off to allow the wafer W to be detached from the electrostatic chuck 6 (t 6 ). Then, the RF power from the radio-frequency power source 11 is turned off to stop the plasma discharge (t 7 ).
- the back face of the wafer Wmay be vacuumed by opening the opening/closing valve 15 when the supply of the He gas 14 to the back face of the wafer W is stopped. This makes it possible to make the pressure of the back face of the wafer W equal to the pressure inside the process chamber 1 , which enables more complete prevention of the failure in chucking the wafer.
- FIG. 3is a view showing the plasma processing sequence in this experiment example following the sequence in FIG. 2A.
- the etching conditions of the anti-reflection coatingwere so set that a Cl 2 mixed gas was used and the He pressure on the back face of the wafer W was 399 Pa.
- the RF power to the top electrode 2was set to 300 W; after 0.5 seconds, the high-voltage DC power source 13 was turned on and the RF power to the susceptor 3 was set to 30 W to perform etching; after the etching, the RF power to the susceptor 3 was turned off and the RF power to the top electrode 2 was lowered to 200 W; after 3 seconds, the high-voltage DC power source 13 was turned off; and after 1 second, the RF power to the top electrode 2 was turned off.
- a Cl 2 gaswas used as the etching condition of a natural oxide film on the surface of the polycrystalline silicon film.
- the RF power to the top electrode 2was set to 225 W; after 0.5 second, the high-voltage DC power source 13 was turned on and the RF power to the susceptor 3 was set to 200 W to perform etching; after the etching, the RF power to the susceptor 3 was turned off; after 3 seconds, the high-voltage DC power source 13 was turned off; and after 1 second, the RF power to the top electrode 2 was turned off.
- a Cl 2 mixed gaswas used as the main etching condition of the polycrystalline silicon film. Further, the RF power to the top electrode 2 was set to 635W; after 0.5 second, the high-voltage DC power source 13 was turned on and the RF power to the susceptor 3 was set to 150 W to perform etching; after the etching, the RF power to the susceptor 3 was turned off and the RF power to the top electrode 2 was lowered to 200 W; after 3 seconds, the high-voltage DC power source 13 was turned off; and after 1 second, the RF power to the top electrode 2 was turned off.
- the RF power to the top electrode 2was set to 375 W; after 0.5 second, the high-voltage DC power source 13 was turned on and the RF power to the susceptor 3 was set to 50 W to perform etching; after the etching, the RF power to the susceptor 3 was turned off and the RF power to the top electrode 2 was lowered to 200 W; after 3 seconds, the high-voltage DC power source 13 was turned off; and after 1 second, the RF power to the top electrode 2 was turned off.
- the number of defects in the secondly processed wafer in the sequence in FIG. 2Awas lower, namely, 5.3% of that in the sequence in FIG. 2B.
- the number of defects in the thirteenth processed wafer in the sequence in FIG. 2Awas lower, namely, 8.6% of that in the sequence in FIG. 2B.
- the number of defects in the twenty-fourth processed wafer in the sequence in FIG. 2Awas lower, namely, 4.5% of that in the sequence in FIG. 2B.
- the RIE apparatus that applies the RF power to the top and bottom electrodeswas taken as an example in the explanation on the embodiment above, but the present invention is also applicable to an etching apparatus that applies a first radio-frequency power having a relatively high frequency and a second radio-frequency power having a frequency lower than the first radio-frequency power to a bottom electrode on which a wafer W is placed.
- the present inventionmay be also applied to apparatuses other than the etching apparatus, and for example, it may be applied to a plasma CVD apparatus and so on. This makes it possible to inhibit the adhesion of particles while the film thickness is accurately controlled.
- the present inventionmay also be applied to a magnetron plasma processor, an ECR (electronic cyclotron resonance) plasma processor, a HEP (helicon wave excited plasma) processor, an ICP (inductively coupled plasma) processor, a TCP (transfer coupled plasma) processor, and so on.
- ECRelectronic cyclotron resonance
- HEPhelicon wave excited plasma
- ICPinductively coupled plasma
- TCPtransfer coupled plasma
- FIG. 4A, FIG. 4B, and FIG. 4Care views showing plasma processing sequences according to second to fourth embodiments of the present invention.
- the RF power from the radio-frequency power source 12is turned off at the detection of the end point by the end point detector 17 (t 5 ), and at the same time, the RF power from the radio-frequency power source 11 is controlled to fall within a range in which the etching does not progress and the plasma discharge can be maintained.
- the RF power from the radio-frequency power source 11is turned off at the detection of the end point by the end point detector 17 (t 5 ), and at the same time, the RF power from the radio-frequency power source 12 is controlled to fall within a range in which the etching does not progress and the plasma discharge can be maintained.
- neither of the RF powers from the radio-frequency power sources 11 , 12is turned off at the detection of the end point by the end point detector 17 (t 5 ), but the RF powers from the radio-frequency power sources 11 , 12 are controlled to fall within the range in which the etching does not progress and the plasma discharge can be maintained. Then, the high-voltage DC power source 13 is turned off to allow the wafer W to be detached from the electrostatic chuck 6 (t 6 ). Thereafter, after the RF power from the radio-frequency power source 11 is turned off (t 7 ), the RF power from the radio-frequency power source 12 is turned off (t 8 ).
- the RF power from the radio-frequency power source 12is not lowered but is maintained as it is at the detection of the end point by the end point detector 17 (t 5 ), and at the same time, the RF power from the radio-frequency power source 11 is controlled to fall within the range in which the etching does not progress and the plasma discharge can be maintained. Then, the high-voltage DC power source 13 is turned off to allow the wafer W to be detached from the electrostatic chuck 6 (t 6 ). Thereafter, after the RF power from the radio-frequency power source 11 is turned off (t 7 ), the RF power from the radio-frequency power source 12 is turned off (t 8 ).
- FIG. 5A and FIG. 5Bare views showing the comparison between the plasma processing sequence according to a fifth embodiment of the present invention and that according to the conventional example. Note that this fifth embodiment relates to a method of starting the application of the RF power, though the above-described first embodiment relates to a method of starting and finishing the application of the RF power and the second to fourth embodiments relate to a method of finishing the application of the RF power.
- the high-voltage DC power source 13is turned on to fix the wafer W by the electrostatic chuck 6 (t 1 ) and at the same time, the He gas 14 is supplied to the back face of the wafer W (t 1 ). Then, after the RF power from the radio-frequency power source 11 is turned on (t 2 ), the RF power from the radio-frequency power source 12 is turned on (t 3 ).
- the wafer Wis fixed by the electrostatic chuck 6 (t 1 ) and at the same time, the He gas 14 is supplied to the back face of the wafer W (t 1 ), as shown in FIG. 5A. Then, after the RF power from the radio-frequency power source 12 is turned on (t 2 ), the RF power from the radio-frequency power source 11 is turned on (t 3 ).
- the polycrystalline silicon film on the silicon oxide filmwas etched under the conditions that a Cl 2 gas was used at the flow rate of 50 sccm, the RF power to the top electrode 2 was set to 525W, the RF power to the susceptor 3 was set to 70 W, the pressure was set to 0.665 Pa, and the distance between the electrodes was set to 115 mm.
- a Cl 2 gaswas used at the flow rate of 50 sccm
- the RF power to the top electrode 2was set to 525W
- the RF power to the susceptor 3was set to 70 W
- the pressurewas set to 0.665 Pa
- the distance between the electrodeswas set to 115 mm.
- 0% defective ratio of a silicon oxide film withstand voltagewas achieved in the sequence shown in FIG. 5A.
- the explanationis given on the method in which the RF power from the radio-frequency power source 12 is turned on after the high-voltage DC power source 13 is turned on, and thereafter, the RF power from the radio-frequency power source 11 is turned on, but the high-voltage DC power source 13 may be turned on after the RF power from the radio-frequency power source 12 is turned on and the RF power from the radio-frequency power source 11 is further turned on. This makes it possible not only to reduce the charge-up damage but also to inhibit the adhesion of the particles also at the stage of starting the application of the RF power.
- the RF powers from the radio-frequency power sources 11 , 12when the RF powers from the radio-frequency power sources 11 , 12 are turned on before the high-voltage DC power source 13 is turned on, the RF powers from the radio-frequency power sources 11 , 12 may be controlled to fall within a range in which the etching does not progress and the plasma discharge can be maintained during this time. This makes it possible to inhibit the adhesion of particles and to prevent the progress of the etching before predetermined conditions are not satisfied.
- the explanationis given on the method in which the RF powers from the radio-frequency power sources 11 , 12 are turned off simultaneously, when the RF powers from the radio-frequency power sources 11 , 12 are to be turned off, but the RF power from the radio-frequency power source 12 may be turned off after the RF power from the radio-frequency power source 11 is turned off.
- the adhesion of particlescan be inhibited while an etching amount is controlled accurately.
- a plasma processing apparatus and a plasma processing method according to the present inventionare usable in the semiconductor manufacturing industry in which semiconductor devices are manufactured, and so on. Therefore, both have industrial applicability.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
- The present invention relates to a plasma processing apparatus and a plasma processing method, more particularly, to those suitable for use when an RF power is applied to a top and a bottom electrode.[0001]
- Some conventional plasma processing apparatus use an electrostatic chuck in order to fix a wafer in a chamber. In a method using this electrostatic chuck, a high DC voltage is applied to the electrostatic chuck to cause a Coulomb force to act on the wafer, thereby fixing the wafer.[0002]
- In such a plasma processing apparatus, the application of the high DC voltage to the electrostatic chuck under the condition without any plasma causes the surface of the wafer to adsorb particles due to the Coulomb force acting on the wafer. Therefore, at the start of the process, the high DC voltage to the electrostatic chuck is turned on after an RF power is turned on, and at the completion of the process, the RF power is turned off after the high DC voltage to the electrostatic chuck is turned off, thereby preventing the high DC voltage from being applied to the electrostatic chuck under the condition without any plasma to reduce the adhesion of the particles to the surface of the wafer.[0003]
- In this method, however, due to the exposure of the wafer to the plasma even after the high DC voltage to the electrostatic chuck is turned off, etching progresses up to an etching amount exceeding a desired amount, thereby giving an adverse effect to the finished shape, size, and so on, which has posed a problem of deteriorating device performance.[0004]
- Such being the circumstances, it is an object of the present invention to provide a plasma processing apparatus and a plasma processing method capable of inhibiting the adhesion of particles while an etching amount is accurately controlled.[0005]
- An aspect of the present invention is characterized in that it includes: a step of fixing a wafer via an electrostatic chuck; a step of applying a first radio-frequency power having a first frequency and a second radio-frequency power having a second frequency lower than the first frequency to thereby plasma-processing the wafer; a step of maintaining plasma discharge within a range in which the plasma processing does not progress after the plasma processing is finished; a step of stopping supply of a coolant gas supplied to a back face of the wafer via the electrostatic chuck; a step of stopping application of a direct-current voltage to the electrostatic chuck; and a step of stopping the plasma discharge after stopping the application of the direct-current voltage.[0006]
- This structure can prevent the progress of the plasma processing even when the plasma discharge is maintained after the plasma processing is finished. Consequently, even when the application of the direct-current voltage to the electrostatic chuck is stopped with the plasma discharge being maintained, etching does not further progress after the completion of the plasma processing, which makes it possible to stop the application of the direct-current voltage while inhibiting the adhesion of particles to the wafer.[0007]
- Another aspect of the present invention is characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the application of the second radio-frequency power is stopped and the first radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress.[0008]
- With this structure, the plasma discharge can be maintained only by controlling the first radio-frequency power, so that the control can be simplified.[0009]
- Still another aspect of the present invention is characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the application of the first radio-frequency power is stopped and the second radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress.[0010]
- With this structure, it is possible to lower the frequency when the plasma discharge is maintained and to maintain the plasma discharge while the energy of ions incident on the wafer is controlled, thereby reducing charge-up damage.[0011]
- Yet another aspect of the present invention is characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the first radio-frequency power and the second radio-frequency power are controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress, and that, in the step of stopping the plasma discharge, the application of the second radio-frequency power is stopped after the first radio-frequency power is stopped.[0012]
- With this structure, the plasma discharge can be maintained within the range in which the plasma processing does not progress while plasma density and ion energy are both controlled, which makes it possible to further reduce the adhesion of particles and the occurrence of over-etching and to reduce the charge-up damage.[0013]
- Yet another aspect of the present invention is characterized in that, in the step of maintaining the plasma discharge, when the plasma processing is finished, the second radio-frequency power is maintained as it is and the first radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress, and that, in the step of stopping the plasma discharge, the application of the second radio-frequency power is stopped after the application of the first radio-frequency power is stopped.[0014]
- This structure can prevent the plasma discharge from being maintained under the condition in which the ion energy is not controlled, so that the charge-up damage can be reduced.[0015]
- According to yet another aspect of the present invention, provided is a plasma processing method including: applying a first radio-frequency power having a first frequency and a second radio-frequency power having a second frequency lower than the first frequency to thereby perform plasma processing, the method characterized in that the first radio-frequency power is applied after the second radio-frequency power is applied. With this structure, plasma discharge under the condition in which ion energy is not controlled can be prevented also at the start of the application of the radio-frequency powers, so that the charge-up damage can be reduced. Yet another aspect of the present invention is characterized in that it further includes: a step of stopping the application of the second radio-frequency power after the application of the first radio-frequency power is stopped.[0016]
- This structure can prevent the plasma discharge under the condition in which the ion energy is not controlled, not only when the application of the radio-frequency power is started but also when the application of the radio-frequency power is stopped, so that the charge-up damage can be further reduced.[0017]
- Yet another aspect of the present invention is characterized in that the first radio-frequency power is applied to a top electrode and the second radio-frequency power is applied to a bottom electrode.[0018]
- Yet another aspect of the present invention is characterized in that the first radio-frequency power and the second radio-frequency power are applied to a bottom electrode.[0019]
- Yet another aspect of the present invention is characterized in that it includes: an electrostatic chuck to fix a wafer on a susceptor; a direct current voltage source to apply a direct current voltage to the electrostatic chuck; a plasma generating unit to generate plasma in a chamber; a plasma discharge control unit to maintain plasma discharge within a range in which the plasma processing does not progress, after the plasma processing is finished; and a direct current voltage stopping unit to stop the application of the direct current voltage to the electrostatic chuck at a certain point in time during which the plasma discharge is maintained.[0020]
- With this structure, it is possible to maintain the plasma discharge while preventing the progress of the plasma processing, so that the progress of over-etching can be prevented even when the application of the direct current voltage to the electrostatic chuck is stopped with the plasma discharge being maintained in order to prevent the adhesion of particles to the wafer. Yet another aspect of the present invention is characterized in that the plasma generating unit includes: a top electrode; a bottom electrode; a top power applying unit to apply a radio-frequency power to the top electrode; and a bottom power applying unit to apply a radio-frequency power to the bottom electrode, and that the plasma discharge control unit maintains the plasma discharge within the range in which the plasma processing does not progress, and controls the application of the radio-frequency power to the bottom electrode to be stopped after controlling the application of the radio-frequency power to the top electrode to be stopped.[0021]
- Yet another aspect of the present invention is characterized in that the plasma generating unit includes: a top electrode; a bottom electrode; a first power applying unit to apply a first radio-frequency power having a first frequency to the top electrode; and a second power applying unit to apply a second radio-frequency power having a second frequency lower than the first frequency to the top electrode, and that the plasma discharge control unit maintains the plasma discharge within the range in which the plasma processing does not progress, and controls the application of the second radio-frequency power to be stopped after controlling the application of the first radio-frequency power to be stopped.[0022]
- This structure makes it possible to maintain the plasma discharge within the range in which the plasma processing does not progress while ion energy is controlled, so that the adhesion of particles to the wafer can be inhibited without being accompanied by the charge-up damage.[0023]
- Yet another aspect of the present invention is characterized in that it further includes a coolant gas supply unit to supply a coolant gas to a back face of the wafer via the electrostatic chuck; and a coolant gas stopping unit to stop the supply of the coolant gas before the application of the direct current voltage to the electrostatic chuck is stopped, after the plasma processing is finished.[0024]
- This structure makes it possible to lower the pressure given to the back face of the wafer before the chucking of the wafer is stopped, so that failure in chucking the wafer can be prevented.[0025]
- FIG. 1 is a cross sectional view showing the schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.[0026]
- FIG. 2A and FIG. 2B are views showing the comparison between the plasma processing sequence according to a first embodiment of the present invention and that according to a conventional example.[0027]
- FIG. 3 is a view showing an experiment example of the plasma processing sequence according to an embodiment of the present invention.[0028]
- FIG. 4A, FIG. 4B, and FIG. 4C are views showing the plasma processing sequence according to second to fourth embodiments of the present invention.[0029]
- FIG. 5A and FIG. 5B are views showing the comparison between the plasma processing sequence according to a fifth embodiment of the present invention and that according to the conventional example.[0030]
- Hereinafter, a plasma processing apparatus according to embodiments of the present invention will be explained with reference to the drawings.[0031]
- FIG. 1 is a cross sectional view showing the schematic configuration of a plasma processing apparatus according to an embodiment of the present invention. In FIG. 1, a[0032]
top electrode 2 and asusceptor 3 are provided in aprocess chamber 1, and thissusceptor 3 also serves as a bottom electrode.Gas blowout ports 2athrough which an etching gas is introduced into theprocess chamber 1 are provided in thetop electrode 2. Thesusceptor 3 is supported on a susceptor supporting table4 and the susceptor supporting table4 is held in theprocess chamber 1 via aninsulating plate 5. Further, radio-frequency power sources top electrode 2 and thesusceptor 3 respectively to plasmatize the etching gas introduced into theprocess chamber 1. A main function of thetop electrode 2 is to ionize gas molecules introduced into theprocess chamber 1, by a radio-frequency power applied thereto from the radio-frequency power source 11, thereby generating plasma. A main function of the bottom electrode serving also as thesusceptor 3 is to control the energy of ions incident on a wafer W without changing plasma density or a radical composition ratio, by a radio-frequency power that is applied from the radio-frequency power source 12 and that has a frequency of 13.56 MHz or lower, which is equal to or lower than that of the radio-frequency power applied by the radio-frequency power source 11. Incidentally, as the frequencies of the radio-frequency power sources - A[0033]
refrigerant chamber 10 is provided in the susceptor supporting table4 and a refrigerant such as liquid nitrogen circulates in therefrigerant chamber 10 via arefrigerant supply pipe 10aand arefrigerant discharge pipe 10b. Cold heat generated from here is transferred to the wafer W via the susceptor supporting table4 and thesusceptor 3, so that the wafer W can be cooled. - An[0034]
electrostatic chuck 6 is provided on thesusceptor 3. Theelectrostatic chuck 6 has such a structure that, for example, aconductive layer 7 is sandwiched bypolyimide films DC power source 13 is connected to theconductive layer 7, and the application of a DC high voltage to theconductive layer 7 causes a Coulomb force to act on the wafer W, so that the wafer W can be fixed onto thesusceptor 3. - Further, a[0035]
gas passage 9 through which a He gas is introduced is formed in thesusceptor 3 and theelectrostatic chuck 6. Thegas passage 9 is connected to a Hegas supply source 14 via an opening/closing valve 14aand a flowrate adjusting valve 14b, and is connected to avacuum pump 16 via a flowrate adjusting valve 15. - When the He gas of, for example, several hundreds Pa is supplied to a back face of the wafer W through this[0036]
gas passage 9, the wafer W placed on thesusceptor 3 can be cooled. Further, when the chucking of the wafer W is released, the back face of the wafer W is vacuumed to eliminate a difference in pressure between the back face of the wafer W and the inside of theprocess chamber 1, which can prevent the wafer W from being blown off. - The[0037]
process chamber 1 has agas supply pipe 1aand anexhaust pipe 1b, and thegas supply pipe 1ais connected to a gas supply source. Theexhaust pipe 1bis connected to a vacuum pump, and when the inside of theprocess chamber 1 is exhausted by this vacuum pump, the pressure in theprocess chamber 1 can be adjusted to, for example several Pa. - An[0038]
end point detector 17 is connected to theprocess chamber 1. An emission spectrum radiated from the wafer W is monitored through the use of thisend point detector 17, so that the end point of etching can be detected. Incidentally, etching depth may be obtained from the phase of the intensity of a reflected interference light after the wafer W is irradiated with light having one waveform or two different waveforms or more. - FIG. 2A and FIG. 2B are views showing the comparison between the plasma processing sequence according to a first embodiment of the present invention and that of a conventional example. Note that ‘EPD’ denotes the end point detection by the[0039]
end point detector 17, ‘Top RF’ denotes the RF power application to thetop electrode 2, ‘Bottom RF’ denotes the RF power application to thesusceptor 3, ‘HV’ denotes ON/OFF of theelectrostatic chuck 6, and ‘Back He’ denotes the introduction of the He gas to the back face of the wafer W, respectively. - In FIG. 2A, the wafer W is placed on the[0040]
susceptor 3 when it is to be plasma-processed. Then, the inside of theprocess chamber 1 is exhausted, and the etching gas is introduced into theprocess chamber 1 while the pressure inside theprocess chamber 1 is adjusted. - Next, after the RF power from the radio-[0041]
frequency power source 11 is applied to the top electrode2 (t2), the RF power from the radio-frequency power source 12 is applied to the susceptor3 (t3), to thereby plasmatize the etching gas and control the energy of ions incident on the wafer W. At the same time, the high-voltage DC power source13 (HV) is turned on to fix the wafer W by theelectrostatic chuck 6, and the opening/closingvalve 14ais opened to have the He gas14 (Back He) emitted to the back face of the wafer W, thereby controlling the temperature of the wafer W. - Thus, after the RF power is applied to the[0042]
top electrode 2, the RF power is applied to thesusceptor 3 and the high-voltageDC power source 13 is turned on, so that the application of the high DC voltage to theelectrostatic chuck 6 under the condition without any plasma can be prevented, which makes it possible to inhibit the adhesion of particles to the surface of the wafer W. - Next, when the end point detector[0043]17 (EPD) detects the end point (t5), the RF power (Bottom RF) from the radio-
frequency power source 12 is turned off (t5) and the supply of theHe gas 14 to the back face of the wafer W is stopped (t5). Further, the RF power (Top RF) from the radio-frequency power source 11 is controlled to a value within a range in which etching does not progress and the plasma discharge can be maintained, for example, 200 W or lower (t5). - Incidentally, as for the end point detecting method, a method of detecting the end point based on the measurement result of the etching time may be adopted, besides the method using the[0044]
end point detector 17. - With this sequence, the supply of the[0045]
He gas 14 to the back face of the wafer W is stopped before the wafer W can be detached from theelectrostatic chuck 6, so that it is made possible to prevent the wafer W from being blown off due to the pressure of theHe gas 14. - Next, the high-voltage[0046]
DC power source 13 is turned off to allow the wafer W to be detached from the electrostatic chuck6 (t6). Then, the RF power from the radio-frequency power source 11 is turned off to stop the plasma discharge (t7). - With this sequence, since the plasma discharge is maintained when the high-voltage[0047]
DC power source 13 is turned off, the adhesion of the particles to the wafer can be inhibited. Further, the plasma discharge at this time is controlled to be within a power not promoting the etching, so that the etching progress can be inhibited even when the plasma discharge is maintained after the detection of the end point by theend point detector 17. - Incidentally, the back face of the wafer W may be vacuumed by opening the opening/closing[0048]
valve 15 when the supply of theHe gas 14 to the back face of the wafer W is stopped. This makes it possible to make the pressure of the back face of the wafer W equal to the pressure inside theprocess chamber 1, which enables more complete prevention of the failure in chucking the wafer. - Meanwhile, as shown in FIG. 2B, when the RF power is turned on after the high-voltage[0049]
DC power source 13 is turned on, the Coulomb force acts on the wafer W under the condition without any plasma, so that the adhesion of the particles to the wafer W at the start of the etching is increased. Further, when the RF power from the radio-frequency power source 12 is turned off and at the same time, the RF power from the radio-frequency power source 11 is turned off at the detection of the end point by the end point detector17 (EPD) (t5), the Coulomb force acts on the wafer W under the condition without any plasma. This increases the adhesion of the particles to the wafer W also at the etching completion. - For example, as an experiment example, using a photoresist film having opening portions patterned therein as a mask on a sample formed by laminating a silicon oxide film, a polycrystalline silicon film, and an anti-reflection coating, etching was conducted for the polycrystalline silicon film and the anti-reflection coating, and thereafter, the number of defects on the wafer W was counted by a pattern defect inspector.[0050]
- FIG. 3 is a view showing the plasma processing sequence in this experiment example following the sequence in FIG. 2A. In FIG. 3, the etching conditions of the anti-reflection coating were so set that a Cl[0051]2mixed gas was used and the He pressure on the back face of the wafer W was 399 Pa. Further, the RF power to the
top electrode 2 was set to 300 W; after 0.5 seconds, the high-voltageDC power source 13 was turned on and the RF power to thesusceptor 3 was set to 30 W to perform etching; after the etching, the RF power to thesusceptor 3 was turned off and the RF power to thetop electrode 2 was lowered to 200 W; after 3 seconds, the high-voltageDC power source 13 was turned off; and after 1 second, the RF power to thetop electrode 2 was turned off. - Meanwhile, a Cl[0052]2gas was used as the etching condition of a natural oxide film on the surface of the polycrystalline silicon film. Further, the RF power to the
top electrode 2 was set to 225 W; after 0.5 second, the high-voltageDC power source 13 was turned on and the RF power to thesusceptor 3 was set to 200 W to perform etching; after the etching, the RF power to thesusceptor 3 was turned off; after 3 seconds, the high-voltageDC power source 13 was turned off; and after 1 second, the RF power to thetop electrode 2 was turned off. - A Cl[0053]2mixed gas was used as the main etching condition of the polycrystalline silicon film. Further, the RF power to the
top electrode 2 was set to 635W; after 0.5 second, the high-voltageDC power source 13 was turned on and the RF power to thesusceptor 3 was set to 150 W to perform etching; after the etching, the RF power to thesusceptor 3 was turned off and the RF power to thetop electrode 2 was lowered to 200 W; after 3 seconds, the high-voltageDC power source 13 was turned off; and after 1 second, the RF power to thetop electrode 2 was turned off. - As the over-etching condition of the polycrystalline silicon film, an HBr mixed gas was used. Further, the RF power to the[0054]
top electrode 2 was set to 375 W; after 0.5 second, the high-voltageDC power source 13 was turned on and the RF power to thesusceptor 3 was set to 50 W to perform etching; after the etching, the RF power to thesusceptor 3 was turned off and the RF power to thetop electrode 2 was lowered to 200 W; after 3 seconds, the high-voltageDC power source 13 was turned off; and after 1 second, the RF power to thetop electrode 2 was turned off. - As a result of processing 25 wafers W following the plasma processing sequences according to FIG. 2A and FIG. 2B respectively, the number of defects in the secondly processed wafer in the sequence in FIG. 2A was lower, namely, 5.3% of that in the sequence in FIG. 2B. Moreover, the number of defects in the thirteenth processed wafer in the sequence in FIG. 2A was lower, namely, 8.6% of that in the sequence in FIG. 2B. Further, the number of defects in the twenty-fourth processed wafer in the sequence in FIG. 2A was lower, namely, 4.5% of that in the sequence in FIG. 2B.[0055]
- Incidentally, the RIE apparatus that applies the RF power to the top and bottom electrodes was taken as an example in the explanation on the embodiment above, but the present invention is also applicable to an etching apparatus that applies a first radio-frequency power having a relatively high frequency and a second radio-frequency power having a frequency lower than the first radio-frequency power to a bottom electrode on which a wafer W is placed. The present invention may be also applied to apparatuses other than the etching apparatus, and for example, it may be applied to a plasma CVD apparatus and so on. This makes it possible to inhibit the adhesion of particles while the film thickness is accurately controlled.[0056]
- The present invention may also be applied to a magnetron plasma processor, an ECR (electronic cyclotron resonance) plasma processor, a HEP (helicon wave excited plasma) processor, an ICP (inductively coupled plasma) processor, a TCP (transfer coupled plasma) processor, and so on.[0057]
- FIG. 4A, FIG. 4B, and FIG. 4C are views showing plasma processing sequences according to second to fourth embodiments of the present invention. In the aforesaid embodiment shown in FIG. 2A, the RF power from the radio-[0058]
frequency power source 12 is turned off at the detection of the end point by the end point detector17 (t5), and at the same time, the RF power from the radio-frequency power source 11 is controlled to fall within a range in which the etching does not progress and the plasma discharge can be maintained. On the other hand, in the embodiment shown in FIG. 4A, the RF power from the radio-frequency power source 11 is turned off at the detection of the end point by the end point detector17 (t5), and at the same time, the RF power from the radio-frequency power source 12 is controlled to fall within a range in which the etching does not progress and the plasma discharge can be maintained. - This makes it possible to maintain the plasma discharge so as to prevent the progress of the etching while the energy of ions incident on the wafer W is controlled, so that the adhesion of the particles can be inhibited and the charge-up damage can be reduced.[0059]
- In the embodiment shown in FIG. 4B, neither of the RF powers from the radio-[0060]
frequency power sources frequency power sources DC power source 13 is turned off to allow the wafer W to be detached from the electrostatic chuck6 (t6). Thereafter, after the RF power from the radio-frequency power source 11 is turned off (t7), the RF power from the radio-frequency power source 12 is turned off (t8). - This makes it possible to maintain the plasma discharge within a range in which the plasma processing does not progress, while plasma density and ion energy are both controlled, so that the adhesion of the particles and the occurrence of over-etching can be further inhibited and the charge-up damage can be reduced.[0061]
- In the embodiment shown in FIG. 4([0062]c), the RF power from the radio-
frequency power source 12 is not lowered but is maintained as it is at the detection of the end point by the end point detector17 (t5), and at the same time, the RF power from the radio-frequency power source 11 is controlled to fall within the range in which the etching does not progress and the plasma discharge can be maintained. Then, the high-voltageDC power source 13 is turned off to allow the wafer W to be detached from the electrostatic chuck6 (t6). Thereafter, after the RF power from the radio-frequency power source 11 is turned off (t7), the RF power from the radio-frequency power source 12 is turned off (t8). - This also makes it possible to prevent the plasma discharge from being maintained under the condition in which the ion energy is not controlled, so that the charge-up damage can be reduced.[0063]
- FIG. 5A and FIG. 5B are views showing the comparison between the plasma processing sequence according to a fifth embodiment of the present invention and that according to the conventional example. Note that this fifth embodiment relates to a method of starting the application of the RF power, though the above-described first embodiment relates to a method of starting and finishing the application of the RF power and the second to fourth embodiments relate to a method of finishing the application of the RF power.[0064]
- In FIG. 5B, according to the conventional method, after the wafer W is placed on the[0065]
susceptor 3, the high-voltageDC power source 13 is turned on to fix the wafer W by the electrostatic chuck6 (t1) and at the same time, theHe gas 14 is supplied to the back face of the wafer W (t1). Then, after the RF power from the radio-frequency power source 11 is turned on (t2), the RF power from the radio-frequency power source 12 is turned on (t3). - On the other hand, in this embodiment, the wafer W is fixed by the electrostatic chuck[0066]6 (t1) and at the same time, the
He gas 14 is supplied to the back face of the wafer W (t1), as shown in FIG. 5A. Then, after the RF power from the radio-frequency power source 12 is turned on (t2), the RF power from the radio-frequency power source 11 is turned on (t3). - This makes it possible to prevent the plasma discharge from being started under the condition in which ion energy is not controlled, when the application of the RF power is started, so that the charge-up damage can be reduced.[0067]
- For example, as an experiment example, the polycrystalline silicon film on the silicon oxide film was etched under the conditions that a Cl[0068]2gas was used at the flow rate of 50 sccm, the RF power to the
top electrode 2 was set to 525W, the RF power to thesusceptor 3 was set to 70 W, the pressure was set to 0.665 Pa, and the distance between the electrodes was set to 115 mm. In this case, in comparison with 8% defective ratio of a silicon oxide film withstand voltage in the sequence shown in FIG. 5B, 0% defective ratio of a silicon oxide film withstand voltage was achieved in the sequence shown in FIG. 5A. - Incidentally, in the embodiment in FIG. 5A, the explanation is given on the method in which the RF power from the radio-[0069]
frequency power source 12 is turned on after the high-voltageDC power source 13 is turned on, and thereafter, the RF power from the radio-frequency power source 11 is turned on, but the high-voltageDC power source 13 may be turned on after the RF power from the radio-frequency power source 12 is turned on and the RF power from the radio-frequency power source 11 is further turned on. This makes it possible not only to reduce the charge-up damage but also to inhibit the adhesion of the particles also at the stage of starting the application of the RF power. - Further, when the RF powers from the radio-[0070]
frequency power sources DC power source 13 is turned on, the RF powers from the radio-frequency power sources - In the embodiment in FIG. 5A, the explanation is given on the method in which the RF powers from the radio-[0071]
frequency power sources frequency power sources frequency power source 12 may be turned off after the RF power from the radio-frequency power source 11 is turned off. - As is explained hitherto, according to the present invention, the adhesion of particles can be inhibited while an etching amount is controlled accurately.[0072]
- A plasma processing apparatus and a plasma processing method according to the present invention are usable in the semiconductor manufacturing industry in which semiconductor devices are manufactured, and so on. Therefore, both have industrial applicability.[0073]
Claims (15)
1. A plasma processing apparatus comprising:
a step of fixing a wafer via an electrostatic chuck;
a step of applying a first radio-frequency power having a first frequency and a second radio-frequency power having a second frequency lower than the first frequency to thereby plasma-processing the wafer;
a step of maintaining plasma discharge within a range in which the plasma processing does not progress after the plasma processing is finished;
a step of stopping supply of a coolant gas supplied to a back face of the wafer via the electrostatic chuck;
a step of stopping application of a direct-current voltage to the electrostatic chuck; and
a step of stopping the plasma discharge after stopping the application of the direct-current voltage.
2. A plasma processing apparatus as set forth inclaim 1 ,
wherein, in the step of maintaining the plasma discharge, when the plasma processing is finished, the application of the second radio-frequency power is stopped and the first radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress.
3. A plasma processing apparatus as set forth inclaim 1 ,
wherein, in the step of maintaining the plasma discharge, when the plasma processing is finished, the application of the first radio-frequency power is stopped and the second radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress.
4. A plasma processing apparatus as set forth inclaim 1 ,
wherein, in the step of maintaining the plasma discharge, when the plasma processing is finished, the first radio-frequency power and the second radio-frequency power are controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress, and
wherein, in the step of stopping the plasma discharge, the application of the second radio-frequency power is stopped after the application of the first radio-frequency power is stopped.
5. A plasma processing apparatus as set forth inclaim 1 ,
wherein, in the step of maintaining the plasma discharge, when the plasma processing is finished, the second radio-frequency power is maintained as it is and the first radio-frequency power is controlled so as to maintain the plasma discharge within the range in which the plasma processing does not progress, and
wherein, in the step of stopping the plasma discharge, the application of the second radio-frequency power is stopped after the application of the first radio-frequency power is stopped.
6. A plasma processing apparatus as set forth in any one ofclaim 1 toclaim 5 ,
wherein, the first radio-frequency power is applied to a top electrode and the second radio-frequency power is applied to a bottom electrode.
7. A plasma processing apparatus as set forth in any one ofclaim 1 toclaim 5 ,
wherein the first radio-frequency power and the second radio-frequency power are applied to a bottom electrode.
8. A plasma processing method, comprising:
applying a first radio-frequency power having a first frequency and a second radio-frequency power having a second frequency lower than the first frequency to thereby perform plasma processing,
wherein the first radio-frequency power is applied after the second radio-frequency power is applied.
9. A plasma processing method as set forth inclaim 8 , further comprising:
stopping the application of the second radio-frequency power after the application of the first radio-frequency power is stopped.
10. A plasma processing method as set forth inclaim 8 orclaim 9 ,
wherein the first radio-frequency power is applied to a top electrode and the second radio-frequency power is applied to a bottom electrode.
11. A plasma processing method as set forth inclaim 8 orclaim 9 ,
wherein the first radio-frequency power and the second radio-frequency power are applied to a bottom electrode.
12. A plasma processing apparatus comprising:
an electrostatic chuck to fix a wafer on a susceptor;
a direct current voltage source to apply a direct current voltage to said electrostatic chuck;
a plasma generating unit to generate plasma in a chamber;
a plasma discharge control unit to maintain plasma discharge within a range in which the plasma processing does not progress, after the plasma processing is finished; and
a direct current voltage stopping unit to stop the application of the direct current voltage to the electrostatic chuck at a certain point in time during which the plasma discharge is maintained.
13. A plasma processing apparatus as set forth inclaim 12 ,
wherein said plasma generating unit includes: a top electrode; a bottom electrode; a top power applying unit to apply a radio-frequency power to the top electrode; and a bottom power applying unit to apply a radio-frequency power to the bottom electrode,
wherein said plasma discharge control unit maintains the plasma discharge within the range in which the plasma processing does not progress, and controls the application of the radio-frequency power to the bottom electrode to be stopped after controlling the application of the radio-frequency power to the top electrode to be stopped.
14. A plasma processing apparatus as set forth inclaim 12 ,
wherein said plasma generating unit includes: a top electrode; a bottom electrode; a first power applying unit to apply a first radio-frequency power having a first frequency to the top electrode; and a second power applying unit to apply a second radio-frequency power having a second frequency lower than the first frequency to the top electrode, and
wherein said plasma discharge control unit maintains the plasma discharge within the range in which the plasma processing does not progress, and controls the application of the second radio-frequency power to be stopped after controlling the application of the first radio-frequency power to be stopped.
15. A plasma processing apparatus as set forth inclaim 12 , further comprising:
a coolant gas supply unit to supply a coolant gas to a back face of the wafer via said electrostatic chuck; and
a coolant gas stopping unit to stop the supply of the coolant gas before the application of the direct current voltage to said electrostatic chuck is stopped, after the plasma processing is finished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/711,769US7504040B2 (en) | 2001-03-06 | 2007-02-28 | Plasma processing apparatus and plasma processing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-62284 | 2001-03-06 | ||
| JP2001062284AJP4657473B2 (en) | 2001-03-06 | 2001-03-06 | Plasma processing equipment |
| PCT/JP2002/002007WO2002071462A1 (en) | 2001-03-06 | 2002-03-05 | Plasma processor and plasma processing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/711,769DivisionUS7504040B2 (en) | 2001-03-06 | 2007-02-28 | Plasma processing apparatus and plasma processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20040076762A1true US20040076762A1 (en) | 2004-04-22 |
Family
ID=18921445
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/469,235AbandonedUS20040076762A1 (en) | 2001-03-06 | 2002-03-05 | Plasma processor and plasma processing method |
| US11/711,769Expired - LifetimeUS7504040B2 (en) | 2001-03-06 | 2007-02-28 | Plasma processing apparatus and plasma processing method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/711,769Expired - LifetimeUS7504040B2 (en) | 2001-03-06 | 2007-02-28 | Plasma processing apparatus and plasma processing method |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20040076762A1 (en) |
| JP (1) | JP4657473B2 (en) |
| KR (1) | KR100886981B1 (en) |
| WO (1) | WO2002071462A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040219797A1 (en)* | 2001-12-05 | 2004-11-04 | Masanobu Honda | Plasma etching method and plasma etching unit |
| US20050115676A1 (en)* | 2002-03-19 | 2005-06-02 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus and computer storage medium |
| US20070286964A1 (en)* | 2004-09-16 | 2007-12-13 | Kolektor Group D.O.O. | Method for Improving the Electrical Connection Properties of the Surface of a Product Made From a Polymer-Matrix Composite |
| US20100112819A1 (en)* | 2002-08-30 | 2010-05-06 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US20110198315A1 (en)* | 2006-09-04 | 2011-08-18 | Tokyo Electron Limited | Plasma processing method |
| DE102011004581A1 (en)* | 2011-02-23 | 2012-08-23 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | A technique for reducing plasma-induced etch damage during the fabrication of vias in inter-layer dielectrics by modified RF power ramp-up |
| CN111863591A (en)* | 2019-04-28 | 2020-10-30 | 北京北方华创微电子装备有限公司 | A pre-cleaning method |
| US11355322B2 (en) | 2016-08-08 | 2022-06-07 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| CN114999990A (en)* | 2022-06-30 | 2022-09-02 | 北京北方华创微电子装备有限公司 | Control method of semiconductor equipment |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10537013B2 (en)* | 2012-04-23 | 2020-01-14 | Applied Materials, Inc. | Distributed electro-static chuck cooling |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
| JP6357436B2 (en) | 2014-07-25 | 2018-07-11 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en)* | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| JP7176860B6 (en) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | Semiconductor processing chamber to improve precursor flow |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| TWI766433B (en) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | Systems and methods to form airgaps |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4345968A (en)* | 1981-08-27 | 1982-08-24 | Ncr Corporation | End point detection using gas flow |
| US4479848A (en)* | 1983-02-14 | 1984-10-30 | Hitachi, Ltd. | Etching method and apparatus |
| US5203945A (en)* | 1990-11-30 | 1993-04-20 | Tokyo Electron Limited | Plasma processing apparatus having driving control section |
| US5665166A (en)* | 1993-01-29 | 1997-09-09 | Tokyo Electron Limited | Plasma processing apparatus |
| US5711998A (en)* | 1996-05-31 | 1998-01-27 | Lam Research Corporation | Method of polycrystalline silicon hydrogenation |
| US5766498A (en)* | 1992-11-19 | 1998-06-16 | Hitachi, Ltd. | Anisotropic etching method and apparatus |
| US5846885A (en)* | 1995-08-23 | 1998-12-08 | Fujitsu Limited | Plasma treatment method |
| US5997962A (en)* | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
| US6089181A (en)* | 1996-07-23 | 2000-07-18 | Tokyo Electron Limited | Plasma processing apparatus |
| US6136165A (en)* | 1997-11-26 | 2000-10-24 | Cvc Products, Inc. | Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition |
| US6245202B1 (en)* | 1996-04-12 | 2001-06-12 | Hitachi, Ltd. | Plasma treatment device |
| US6277716B1 (en)* | 1999-10-25 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | Method of reduce gate oxide damage by using a multi-step etch process with a predictable premature endpoint system |
| US20020026251A1 (en)* | 1997-09-17 | 2002-02-28 | Tokyo Electron Limited | System and method for monitoring and controlling gas plasma processes |
| US20030119328A1 (en)* | 2001-12-26 | 2003-06-26 | Tokyo Electron Limited | Plasma processing apparatus, and cleaning method therefor |
| US6733624B2 (en)* | 2000-07-17 | 2004-05-11 | Tokyo Electron Limited | Apparatus for holding an object to be processed |
| US6815365B2 (en)* | 1995-03-16 | 2004-11-09 | Hitachi, Ltd. | Plasma etching apparatus and plasma etching method |
| US20040255863A1 (en)* | 2001-12-13 | 2004-12-23 | Tsutomu Higashiura | Plasma process apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04290225A (en)* | 1991-03-18 | 1992-10-14 | Toshiba Corp | Plasma treatment method |
| US5888414A (en)* | 1991-06-27 | 1999-03-30 | Applied Materials, Inc. | Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
| US5539609A (en)* | 1992-12-02 | 1996-07-23 | Applied Materials, Inc. | Electrostatic chuck usable in high density plasma |
| KR100264445B1 (en)* | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | Plasma Treatment Equipment |
| JP2869384B2 (en)* | 1995-06-30 | 1999-03-10 | 東京エレクトロン株式会社 | Plasma processing method |
| US5546885A (en)* | 1995-10-12 | 1996-08-20 | Porada; William M. | Collapsible scuba tank supports for an inflatable dinghy |
| KR100733241B1 (en) | 1998-11-27 | 2007-06-27 | 동경 엘렉트론 주식회사 | Plasma etching equipment |
| JP3323190B2 (en)* | 2000-04-19 | 2002-09-09 | 松下電器産業株式会社 | Dry etching method, method of manufacturing semiconductor device, and dry etching apparatus |
- 2001
- 2001-03-06JPJP2001062284Apatent/JP4657473B2/ennot_activeExpired - Fee Related
- 2002
- 2002-03-05KRKR1020037011624Apatent/KR100886981B1/ennot_activeExpired - Fee Related
- 2002-03-05WOPCT/JP2002/002007patent/WO2002071462A1/enactiveApplication Filing
- 2002-03-05USUS10/469,235patent/US20040076762A1/ennot_activeAbandoned
- 2007
- 2007-02-28USUS11/711,769patent/US7504040B2/ennot_activeExpired - Lifetime
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4345968A (en)* | 1981-08-27 | 1982-08-24 | Ncr Corporation | End point detection using gas flow |
| US4479848A (en)* | 1983-02-14 | 1984-10-30 | Hitachi, Ltd. | Etching method and apparatus |
| US5203945A (en)* | 1990-11-30 | 1993-04-20 | Tokyo Electron Limited | Plasma processing apparatus having driving control section |
| US5766498A (en)* | 1992-11-19 | 1998-06-16 | Hitachi, Ltd. | Anisotropic etching method and apparatus |
| US5665166A (en)* | 1993-01-29 | 1997-09-09 | Tokyo Electron Limited | Plasma processing apparatus |
| US6815365B2 (en)* | 1995-03-16 | 2004-11-09 | Hitachi, Ltd. | Plasma etching apparatus and plasma etching method |
| US5997962A (en)* | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
| US5846885A (en)* | 1995-08-23 | 1998-12-08 | Fujitsu Limited | Plasma treatment method |
| US6245202B1 (en)* | 1996-04-12 | 2001-06-12 | Hitachi, Ltd. | Plasma treatment device |
| US5711998A (en)* | 1996-05-31 | 1998-01-27 | Lam Research Corporation | Method of polycrystalline silicon hydrogenation |
| US6089181A (en)* | 1996-07-23 | 2000-07-18 | Tokyo Electron Limited | Plasma processing apparatus |
| US20020026251A1 (en)* | 1997-09-17 | 2002-02-28 | Tokyo Electron Limited | System and method for monitoring and controlling gas plasma processes |
| US6136165A (en)* | 1997-11-26 | 2000-10-24 | Cvc Products, Inc. | Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition |
| US6277716B1 (en)* | 1999-10-25 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | Method of reduce gate oxide damage by using a multi-step etch process with a predictable premature endpoint system |
| US6733624B2 (en)* | 2000-07-17 | 2004-05-11 | Tokyo Electron Limited | Apparatus for holding an object to be processed |
| US20040255863A1 (en)* | 2001-12-13 | 2004-12-23 | Tsutomu Higashiura | Plasma process apparatus |
| US20030119328A1 (en)* | 2001-12-26 | 2003-06-26 | Tokyo Electron Limited | Plasma processing apparatus, and cleaning method therefor |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8840753B2 (en) | 2001-12-05 | 2014-09-23 | Tokyo Electron Limited | Plasma etching unit |
| US7625494B2 (en)* | 2001-12-05 | 2009-12-01 | Tokyo Electron Limited | Plasma etching method and plasma etching unit |
| US20100024983A1 (en)* | 2001-12-05 | 2010-02-04 | Tokyo Electron Limited | Plasma etching unit |
| US20040219797A1 (en)* | 2001-12-05 | 2004-11-04 | Masanobu Honda | Plasma etching method and plasma etching unit |
| US20050115676A1 (en)* | 2002-03-19 | 2005-06-02 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus and computer storage medium |
| US7569154B2 (en)* | 2002-03-19 | 2009-08-04 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus and computer storage medium |
| US20100112819A1 (en)* | 2002-08-30 | 2010-05-06 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US8287750B2 (en)* | 2002-08-30 | 2012-10-16 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US20070286964A1 (en)* | 2004-09-16 | 2007-12-13 | Kolektor Group D.O.O. | Method for Improving the Electrical Connection Properties of the Surface of a Product Made From a Polymer-Matrix Composite |
| US20110198315A1 (en)* | 2006-09-04 | 2011-08-18 | Tokyo Electron Limited | Plasma processing method |
| DE102011004581A1 (en)* | 2011-02-23 | 2012-08-23 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | A technique for reducing plasma-induced etch damage during the fabrication of vias in inter-layer dielectrics by modified RF power ramp-up |
| US9018102B2 (en) | 2011-02-23 | 2015-04-28 | Globalfoundries Inc. | Technique for reducing plasma-induced etch damage during the formation of vias in interlayer dielectrics by modified RF power ramp-up |
| US9111999B2 (en) | 2011-02-23 | 2015-08-18 | Globalfoundries Inc. | Technique for reducing plasma-induced etch damage during the formation of vias in interlayer dielectrics by modified RF power ramp-up |
| US11355322B2 (en) | 2016-08-08 | 2022-06-07 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| CN111863591A (en)* | 2019-04-28 | 2020-10-30 | 北京北方华创微电子装备有限公司 | A pre-cleaning method |
| CN114999990A (en)* | 2022-06-30 | 2022-09-02 | 北京北方华创微电子装备有限公司 | Control method of semiconductor equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4657473B2 (en) | 2011-03-23 |
| US20070148364A1 (en) | 2007-06-28 |
| US7504040B2 (en) | 2009-03-17 |
| WO2002071462A1 (en) | 2002-09-12 |
| JP2002270576A (en) | 2002-09-20 |
| KR100886981B1 (en) | 2009-03-04 |
| KR20030087634A (en) | 2003-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7504040B2 (en) | Plasma processing apparatus and plasma processing method | |
| US8083961B2 (en) | Method and system for controlling the uniformity of a ballistic electron beam by RF modulation | |
| JP5390846B2 (en) | Plasma etching apparatus and plasma cleaning method | |
| TWI460786B (en) | A plasma processing apparatus, a plasma processing method, and a memory medium | |
| US6426477B1 (en) | Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate | |
| Boufnichel et al. | Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing | |
| US8404595B2 (en) | Plasma processing method | |
| US9852922B2 (en) | Plasma processing method | |
| US20030217812A1 (en) | Plasma etching equipment and method for manufacturing semiconductor device | |
| US20070051471A1 (en) | Methods and apparatus for stripping | |
| US7449414B2 (en) | Method of treating a mask layer prior to performing an etching process | |
| TWI445074B (en) | Method of treating a mask layer prior to rerforming an etching process | |
| KR20100004891A (en) | Plasma etching method, control program and computer storage medium | |
| US7572386B2 (en) | Method of treating a mask layer prior to performing an etching process | |
| KR20190086699A (en) | Plasma discharge ignition method for reducing surface particles | |
| JP2003023000A (en) | Method for manufacturing semiconductor device | |
| US10651077B2 (en) | Etching method | |
| US11817312B2 (en) | Delayed pulsing for plasma processing of wafers | |
| US20080032507A1 (en) | Method of treating a mask layer prior to performing an etching process | |
| JPH10312899A (en) | Plasma processing method and plasma processing apparatus | |
| JP3362093B2 (en) | How to remove etching damage | |
| US11328934B2 (en) | Etching method and substrate processing apparatus | |
| JP3172340B2 (en) | Plasma processing equipment | |
| US20030153193A1 (en) | Etching method | |
| WO2003067643A1 (en) | Etching method and etching apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment | Owner name:TOKYO ELECTRON LIMITED, JAPAN Free format text:ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:IIJIMA, ETSUO;TSUCHIYA, HIROSHI;REEL/FRAME:015016/0620 Effective date:20030829 | |
| STCB | Information on status: application discontinuation | Free format text:ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |