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US20020106297A1 - Co-base target and method of producing the same - Google Patents

Co-base target and method of producing the same
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Publication number
US20020106297A1
US20020106297A1US09/995,567US99556701AUS2002106297A1US 20020106297 A1US20020106297 A1US 20020106297A1US 99556701 AUS99556701 AUS 99556701AUS 2002106297 A1US2002106297 A1US 2002106297A1
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atomic
powder
zero
base
sintering
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Abandoned
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US09/995,567
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Tomonori Ueno
Hideo Murata
Shigeru Taniguchi
Hide Ueno
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Proterial Ltd
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Hitachi Metals Ltd
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Assigned to HITACHI METALS LTD.reassignmentHITACHI METALS LTD.ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: MURATA, HIDEO, TANIGUCHI, SHIGERU, UENO, HIDE, UENO, TOMONORI
Publication of US20020106297A1publicationCriticalpatent/US20020106297A1/en
Abandonedlegal-statusCriticalCurrent

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Abstract

The invention relates to a Co-base target made of a sintered powder, having a restrained amount of oxygen, and a producing method thereof. The target contains from more than 10 to not more than 25 at % of B and not more than 100 ppm of oxygen. It may contain 30≧Pt≧5 at%, 30≧Cr≧10 at%, 10≧Ta>0 at% and/or 30≧Ni>0 at%. It may contain also from more than 0 (zero) to not more than 15 at% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Mo, W, Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and rare earth elements. The target is produced by melting a Co-base alloy together with an additive B in an amount of from more than 10 to not more than 25 at% whereby deoxidizing, rapidly cooling the molten metal to produce an alloy powder and sintering the alloy powder. It can be optionally produced by mixing the above alloy powder with another metal powder, more particularly consisting of one or more elements selected from the group consisting of Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and Pt, and sintering the powder mixture.

Description

Claims (28)

What is claimed is:
1. A Co-base target produced by powder sintering, which comprises from more than 10 atomic % to 25 atomic % of B (boron) and not more than 100 ppm of oxygen as an impurity.
2. A Co-base target according toclaim 1, which further comprises from more than zero to 10 atomic % Ta.
3. A Co-base target according toclaim 1, which further comprises from more than zero to 30 atomic % Ni.
4. A Co-base target according toclaim 1, which further comprises from more than zero to 10 atomic % Ta and from more than zero to 30 atomic % Ni.
5. A Co-base target according toclaim 1, which further comprises from more than zero to 15 atomic % in a total amount of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Mo, W, Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and REM.
6. A Co-base target according toclaim 5, which further comprises from more than zero to 10 atomic % Ta.
7. A Co-base target according toclaim 5, which further comprises from more than zero to 30 atomic % Ni.
8. A Co-base target according toclaim 5, which further comprises from more than zero to 10 atomic % Ta and from more than zero to 30 atomic % Ni.
9. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
10. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, from more than zero to 10 atomic % Ta, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
11. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, from more than zero to 30 atomic % Ni, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
12. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, from more than zero to 10 atomic % Ta, from more than zero to 30 atomic % Ni, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
13. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, from more than zero to 15 atomic % in a total amount of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Mo, W, Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and REM, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
14. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, from more than zero to 10 atomic % Ta, from more than zero to 15 atomic % in a total amount of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Mo, W, Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and REM, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
15. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, from more than zero to 30 atomic % Ni, from more than zero to 15 atomic % in a total amount of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Mo, W, Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and REM, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
16. A Co-base target produced by powder sintering, which consists essentially of from more than 10 atomic % to 25 atomic % of B (boron), 5 to 30 atomic % Pt, 10 to 30 atomic % Cr, from more than zero to 10 atomic % Ta, from more than zero to 30 atomic % Ni, from more than zero to 15 atomic % in a total amount of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Mo, W, Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and REM, not more than 100 ppm of oxygen as an impurity and the balance mainly of Co.
17. A method of producing a Co-base target, which comprises:
melting a Co-base alloy and an additive B (boron), whereby deoxidizing the Co-base alloy,
subjecting the resultant Co-base alloy to a rapid cooling treatment to obtain a powder of the Co-base alloy, and
sintering the thus obtained alloy powder.
18. A method of producing a Co-base target, which comprises:
melting a Co-base alloy and an additive B (boron), whereby deoxidizing the Co-base alloy,
subjecting the resultant Co-base alloy to a rapid cooling treatment to obtain a powder of the Co-base alloy,
mixing the Co-base alloy powder and another metal powder, and
sintering the thus obtained mixed powder.
19. A method of producing a Co-base target, which comprises:
melting a Co-base alloy and an additive B (boron), whereby deoxidizing the Co-base alloy,
subjecting the resultant Co-base alloy to a rapid cooling treatment to obtain a powder of the Co-base alloy,
mixing the Co-base alloy powder and a metal
powder of at least one element selected from the group consisting of Cu, Ag, Au, Ru, Rh, Pd, Os, Ir and Pt, and
sintering the thus obtained mixed powder.
20. A method of producing a Co-base target according toclaim 17,18,19, which comprises:
melting a Co-base alloy and an additive B (boron) in an amount of from more than 10 atomic % to 25 atomic %, whereby deoxidizing the Co-base alloy.
21. A method according toclaim 18, wherein the thus obtained sintered product is subjected to a heat treatment.
22. A method according toclaim 19, wherein the thus obtained sintered product is subjected to a heat treatment.
23. A method according toclaim 17, wherein the rapid cooling treatment is conducted by the atomizing process.
24. A method according toclaim 18, wherein the rapid cooling treatment is conducted by the atomizing process.
25. A method according toclaim 19, wherein the rapid cooling treatment is conducted by the atomizing process.
26. A method according toclaim 17, wherein the sintering is conducted by the Hot Isostatic Pressing method.
27. A method according toclaim 18, wherein the sintering is conducted by the Hot Isostatic Pressing method.
28. A method according toclaim 19, wherein the sintering is conducted by the Hot Isostatic Pressing method.
US09/995,5672000-12-012001-11-29Co-base target and method of producing the sameAbandonedUS20020106297A1 (en)

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JP2000-3666392000-12-01
JP20003666392000-12-01

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US20050175287A1 (en)*2002-03-162005-08-11Tao PanMode size converter for a planar waveguide
US20050249981A1 (en)*2004-05-102005-11-10Heraeus, Inc.Grain structure for magnetic recording media
US20050277002A1 (en)*2004-06-152005-12-15Heraeus, Inc.Enhanced sputter target alloy compositions
US20060042938A1 (en)*2004-09-012006-03-02Heraeus, Inc.Sputter target material for improved magnetic layer
US20060234091A1 (en)*2005-04-192006-10-19Heraeus, Inc.Enhanced multi-component oxide-containing sputter target alloy compositions
US20060286414A1 (en)*2005-06-152006-12-21Heraeus, Inc.Enhanced oxide-containing sputter target alloy compositions
EP1746586A1 (en)*2005-07-192007-01-24Heraeus, Inc.Enhanced sputter target alloy compositions
US20070017803A1 (en)*2005-07-222007-01-25Heraeus, Inc.Enhanced sputter target manufacturing method
US7205662B2 (en)2003-02-272007-04-17Symmorphix, Inc.Dielectric barrier layer films
US7238628B2 (en)2003-05-232007-07-03Symmorphix, Inc.Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US20070253103A1 (en)*2006-04-272007-11-01Heraeus, Inc.Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target
WO2008050644A1 (en)*2006-10-192008-05-02Asahi Glass Company, LimitedSputtering target used for production of reflective mask blank for euv lithography
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US7404877B2 (en)2001-11-092008-07-29Springworks, LlcLow temperature zirconia based thermal barrier layer by PVD
US20080202916A1 (en)*2007-02-222008-08-28Heraeus IncorporatedControlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
US7469558B2 (en)2001-07-102008-12-30Springworks, LlcAs-deposited planar optical waveguides with low scattering loss and methods for their manufacture
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US20090139858A1 (en)*2004-11-152009-06-04Nippon Mining & Metals Co., Ltd.Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof
US7826702B2 (en)2002-08-272010-11-02Springworks, LlcOptically coupling into highly uniform waveguides
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US7959769B2 (en)2004-12-082011-06-14Infinite Power Solutions, Inc.Deposition of LiCoO2
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US8021778B2 (en)2002-08-092011-09-20Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US8062708B2 (en)2006-09-292011-11-22Infinite Power Solutions, Inc.Masking of and material constraint for depositing battery layers on flexible substrates
US8197781B2 (en)2006-11-072012-06-12Infinite Power Solutions, Inc.Sputtering target of Li3PO4 and method for producing same
US8236443B2 (en)2002-08-092012-08-07Infinite Power Solutions, Inc.Metal film encapsulation
CN102652184A (en)*2009-12-112012-08-29吉坤日矿日石金属株式会社Magnetic material sputtering target
US8260203B2 (en)2008-09-122012-09-04Infinite Power Solutions, Inc.Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US8268488B2 (en)2007-12-212012-09-18Infinite Power Solutions, Inc.Thin film electrolyte for thin film batteries
US8350519B2 (en)2008-04-022013-01-08Infinite Power Solutions, IncPassive over/under voltage control and protection for energy storage devices associated with energy harvesting
US8394522B2 (en)2002-08-092013-03-12Infinite Power Solutions, Inc.Robust metal film encapsulation
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US8445130B2 (en)2002-08-092013-05-21Infinite Power Solutions, Inc.Hybrid thin-film battery
US8508193B2 (en)2008-10-082013-08-13Infinite Power Solutions, Inc.Environmentally-powered wireless sensor module
US8518581B2 (en)2008-01-112013-08-27Inifinite Power Solutions, Inc.Thin film encapsulation for thin film batteries and other devices
US8599572B2 (en)2009-09-012013-12-03Infinite Power Solutions, Inc.Printed circuit board with integrated thin film battery
US8636876B2 (en)2004-12-082014-01-28R. Ernest DemarayDeposition of LiCoO2
KR101384111B1 (en)2009-01-092014-04-10주식회사 에스앤에스텍A Blank Mask, A Photomask using the Same and Method of Fabricating the Same
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US8932444B2 (en)2008-03-282015-01-13Jx Nippon Mining & Metals CorporationSputtering target of nonmagnetic-particle-dispersed ferromagnetic material
US9103023B2 (en)2009-03-272015-08-11Jx Nippon Mining & Metals CorporationNonmagnetic material particle-dispersed ferromagnetic material sputtering target
US9334557B2 (en)2007-12-212016-05-10Sapurast Research LlcMethod for sputter targets for electrolyte films
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CN104263999A (en)*2014-10-112015-01-07上海大学兴化特种不锈钢研究院Novel high-plasticity medical cobalt-based alloy
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