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US20020085954A1 - Inorganic permeation layer for micro-electric device - Google Patents

Inorganic permeation layer for micro-electric device
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Publication number
US20020085954A1
US20020085954A1US10/029,472US2947201AUS2002085954A1US 20020085954 A1US20020085954 A1US 20020085954A1US 2947201 AUS2947201 AUS 2947201AUS 2002085954 A1US2002085954 A1US 2002085954A1
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US
United States
Prior art keywords
sol
micro
electronic device
surfactant
permeation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/029,472
Inventor
John Havens
Michael Krihak
Charles Greef
Daniel Raymond
Michael Heller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanogen Inc
Original Assignee
Nanogen Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/146,504external-prioritypatent/US5605662A/en
Priority claimed from US08/271,882external-prioritypatent/US6017696A/en
Priority claimed from US08/304,657external-prioritypatent/US5632957A/en
Priority claimed from US08/534,454external-prioritypatent/US5849486A/en
Priority claimed from US08/986,065external-prioritypatent/US6051380A/en
Application filed by Nanogen IncfiledCriticalNanogen Inc
Priority to US10/029,472priorityCriticalpatent/US20020085954A1/en
Publication of US20020085954A1publicationCriticalpatent/US20020085954A1/en
Abandonedlegal-statusCriticalCurrent

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Abstract

The present invention pertains to a method of, and a device created by, depositing an inorganic permeation layer on a micro-electronic device for molecular biological reactions. The permeation layer is preferably sol-gel. The sol-gel permeation layer can be created with pre-defined porosity, pore size distribution, pore morphology, and surface area. The sol-gel permeation layer may also function as the attachment layer of the micro-electric device.

Description

Claims (24)

We claim:
1. An electronic device adapted to received a solution comprising:
a substrate;
a plurality of selectively addressable electrodes on the substrate; and
a permeation layer adjacent the electrodes, the permeation layer being a sol-gel composition; and
an electric source for selectively addressing the electrodes.
2. The electronic device ofclaim 1 wherein the sol-gel composition is comprised of silicon dioxide.
3. The electronic device ofclaim 2 wherein the silicon dioxide sol-gel composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
4. The electronic device ofclaim 3 wherein the surfactant is cetyltrimethylammonium bromide.
5. The electronic device ofclaim 3 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the sol-gel.
6. The electronic device ofclaim 1 further comprising:
an attachment layer adjacent the permeation layer and having selective binding properties for specific binding entities.
7. The electronic device ofclaim 1 further comprising:
an attachment layer integral with the permeation layer and having selective binding properties for specific binding entities.
8. An electronic device adapted to receive a solution comprising:
a substrate;
a plurality of selectively addressable electrodes on the substrate; and
a permeation layer adjacent the electrodes, the permeation layer being a silicon dioxide composition.
9. The electronic device ofclaim 8 wherein the silicon dioxide composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
10. The electronic device ofclaim 9 wherein the surfactant is cetyltrimethylammonium bromide.
11. The electronic device ofclaim 9 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the silicon dioxide composition.
12. The electronic device ofclaim 8 further comprising:
an attachment layer adjacent the permeation layer with selective binding properties for specific binding entities.
13. The electronic device ofclaim 8 further comprising:
an attachment layer integral with the permeation layer and having selective binding properties for specific binding entities.
14. A method for forming an electronic device adapted to receive a solution comprising:
providing a substrate;
locating a plurality of selectively addressable electrodes on the substrate; and
forming a permeation layer adjacent the electrodes, the permeation layer being a sol-gel composition.
15. The method ofclaim 14 wherein the sol-gel composition is comprised of silicon dioxide.
16. The method ofclaim 15 wherein the silicon dioxide sol-gel composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
17. The method ofclaim 16 wherein the surfactant is cetyltrimethylammonium bromide.
18. The method ofclaim 16 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the sol-gel.
19. The method ofclaim 14 further comprising:
forming an attachment layer adjacent the permeation layer with selective binding properties for specific binding entities.
20. A method of forming a permeation layer for use on an electronic device comprising:
mixing tetraethylorthosilicate, an alcohol, water and an acid to form a stock solution;
mixing the stock solution with additional water and additional acid;
adding additional alcohol;
adding a surfactant to form a sol-gel solution;
depositing the sol-gel solution on a substrate;
spinning the substrate; and
heating the substrate.
21. The method ofclaim 20 wherein the surfactant is cetyltrimethylammonium bromide, the acid is hydrochloric acid and the alcohol is ethanol.
22. The method ofclaim 21 wherein the final molar ratio is tetraethylorthosilicate=about 1.0, water=about 0.0 to about 40.0, ethanol=about 0.0 to about 40.0 and hydrochloric acid=about 0.0001 to about 0.1.
23. The method ofclaim 20 wherein the weight percent of the surfactant is from 1 weight percent to 5 weight percent.
24. The method ofclaim 20 wherein the amount of surfactant is varied to vary the pore size in the permeation layer.
US10/029,4721993-11-012001-10-22Inorganic permeation layer for micro-electric deviceAbandonedUS20020085954A1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
US10/029,472US20020085954A1 (en)1993-11-012001-10-22Inorganic permeation layer for micro-electric device

Applications Claiming Priority (8)

Application NumberPriority DateFiling DateTitle
US08/146,504US5605662A (en)1993-11-011993-11-01Active programmable electronic devices for molecular biological analysis and diagnostics
US08/271,882US6017696A (en)1993-11-011994-07-07Methods for electronic stringency control for molecular biological analysis and diagnostics
US08/304,657US5632957A (en)1993-11-011994-09-09Molecular biological diagnostic systems including electrodes
US08/534,454US5849486A (en)1993-11-011995-09-27Methods for hybridization analysis utilizing electrically controlled hybridization
US70826296A1996-09-061996-09-06
US08/986,065US6051380A (en)1993-11-011997-12-05Methods and procedures for molecular biological analysis and diagnostics
US09/354,931US6306348B1 (en)1993-11-011999-07-15Inorganic permeation layer for micro-electric device
US10/029,472US20020085954A1 (en)1993-11-012001-10-22Inorganic permeation layer for micro-electric device

Related Parent Applications (1)

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US09/354,931ContinuationUS6306348B1 (en)1993-11-011999-07-15Inorganic permeation layer for micro-electric device

Publications (1)

Publication NumberPublication Date
US20020085954A1true US20020085954A1 (en)2002-07-04

Family

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Family Applications (2)

Application NumberTitlePriority DateFiling Date
US09/354,931Expired - Fee RelatedUS6306348B1 (en)1993-11-011999-07-15Inorganic permeation layer for micro-electric device
US10/029,472AbandonedUS20020085954A1 (en)1993-11-012001-10-22Inorganic permeation layer for micro-electric device

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Application NumberTitlePriority DateFiling Date
US09/354,931Expired - Fee RelatedUS6306348B1 (en)1993-11-011999-07-15Inorganic permeation layer for micro-electric device

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US (2)US6306348B1 (en)
EP (1)EP1204853A4 (en)
JP (1)JP2003505046A (en)
KR (1)KR20020029905A (en)
AU (1)AU769715B2 (en)
CA (1)CA2379762A1 (en)
WO (1)WO2001006496A1 (en)

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AU6403400A (en)2001-02-05
WO2001006496A1 (en)2001-01-25

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