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US20010027159A1 - Method for preparation of sintered body of rare earth oxide - Google Patents

Method for preparation of sintered body of rare earth oxide
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Publication number
US20010027159A1
US20010027159A1US09/783,602US78360201AUS2001027159A1US 20010027159 A1US20010027159 A1US 20010027159A1US 78360201 AUS78360201 AUS 78360201AUS 2001027159 A1US2001027159 A1US 2001027159A1
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Prior art keywords
rare earth
earth oxide
sintered body
powder
oxide
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US09/783,602
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US6410471B2 (en
Inventor
Masami Kaneyoshi
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Assigned to SHIN-ETSU CHEMICAL CO., LTD.reassignmentSHIN-ETSU CHEMICAL CO., LTD.ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: KANEYOSHI, MASAMI
Publication of US20010027159A1publicationCriticalpatent/US20010027159A1/en
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Publication of US6410471B2publicationCriticalpatent/US6410471B2/en
Anticipated expirationlegal-statusCritical
Expired - Fee Relatedlegal-statusCriticalCurrent

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Abstract

Disclosed is a method for the preparation of a high-quality sintered body of a rare earth oxide or a composite oxide of a rare earth oxide and an adjuvant oxide such as aluminum oxide. The method comprises shaping a rare earth oxide powder characterized by specified particle diameter distribution values of D50and D90and a specified specific surface area or a powder blend of the rare earth oxide and adjuvant oxide into a powder compact and subjecting the powder compact to a sintering heat treatment at a specified sintering temperature by increasing and decreasing the temperature up to and from the sintering temperature each at a rate not exceeding a specified upper limit.

Description

Claims (17)

What is claimed is:
1. A method for the preparation of a sintered body of a rare earth oxide which comprises the steps of:
(a) shaping a powder of the rare earth oxide, of which the D50value of the particle diameter distribution does not exceed 2.0 μm, the D90value of the particle diameter distribution does not exceed 3.0 μm and the specific surface area is in the range from 5 to 20 m2/g, into a powder compact; and
(b) subjecting the powder compact to a heat treatment for sintering at a sintering temperature of 1000° C. or higher for at least 1 hour, in which the rate of temperature elevation in the range from 500° C. to the sintering temperature does not exceed 500° C. per hour and the rate of temperature decrease from the sintering temperature does not exceed 600° C. per hour.
2. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the D50value of the particle diameter distribution of the rare earth oxide powder does not exceed 1.5 μm.
3. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the D50value of the particle diameter distribution of the rare earth oxide powder is in the range from 0.9 to 1.3 μm.
4. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the Dvalue of the particle diameter distribution of the rare earth oxide powder does not exceed 2.7 μm.
5. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the D90value of the particle diameter distribution of the rare earth oxide powder is in the range from 1.9 to 2.3 μm.
6. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the specific surface area of the rare earth oxide powder is in the range from 7 to 18 m2/g.
7. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the specific surface area of the rare earth oxide powder is in the range from 10 to 15 m2/g.
8. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the D′50value of the pore diameter distribution of the rare earth oxide powder does not exceed 20 nm.
9. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the sintering temperature is in the range from 1200 to 1900° C.
10. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the sintering temperature is in the range from 1400 to 1800° C.
11. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which shaping of the rare earth oxide powder into a powder compact is conducted by hydrostatic compression.
12. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 11
in which the pressure of hydrostatic compression is at least 100 MPa.
13. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 11
in which the pressure of hydrostatic compression is at least 150 MPa.
14. The method for the preparation of a sintered body of a rare earth oxide as claimed in
claim 1
in which the rate of temperature elevation is in the range from 150 to 400° C. per hour.
15. A method for the preparation of a sintered body of a rare earth oxide-based composite oxide with a n adjuvant oxide which comprises the steps of:
(a) blending a powder of the rare earth oxide, of which the D50value of the particle diameter distribution does not exceed 2.0 μm, the D90value of the particle diameter distribution does not exceed 3.0 μm and the specific surface area is in the range from 5 to 20 m2/g, and an adjuvant oxide of an element selected from the group consisting of magnesium, aluminum, silicon, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, zirconium, niobium, molybdenum, indium, tin, hafnium, tantalum and tungsten to give a powder blend;
(b) shaping the powder blend into a powder compact; and
(c) subjecting the powder compact to a heat treatment for sintering at a sintering temperature of 1000° C. or higher for at least 1 hour, in which the rate of temperature elevation in the range from 500° C. to the sintering temperature does not exceed 500° C. per hour and the rate of temperature decrease from the sintering temperature does not exceed 600° C. per hour.
16. The method for the preparation of a sintered body of a rare earth oxide-based composite oxide with an adjuvant oxide as claimed in
claim 15
in which the amount of the rare earth oxide powder in the powder blend is at leasr 40% by weight based on the total amount of the powder blend.
17. The method for the preparation of a sintered body of a rare earth oxide-based composite oxide with an adjuvant oxide as claimed in
claim 15
in which the adjuvant oxide is selected from the group consisting of the oxides of iron, aluminum, silicon, titanium, gallium and zirconium.
US09/783,6022000-03-072001-02-15Method for preparation of sintered body of rare earth oxideExpired - Fee RelatedUS6410471B2 (en)

Applications Claiming Priority (3)

Application NumberPriority DateFiling DateTitle
JP2000-623612000-03-07
JP2000-0623612000-03-07
JP20000623612000-03-07

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Publication NumberPublication Date
US20010027159A1true US20010027159A1 (en)2001-10-04
US6410471B2 US6410471B2 (en)2002-06-25

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Cited By (41)

* Cited by examiner, † Cited by third party
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US6827826B2 (en)2000-08-072004-12-07Symmorphix, Inc.Planar optical devices and methods for their manufacture
US20050019241A1 (en)*2003-07-232005-01-27Lyons Robert JosephPreparation of rare earth ceramic garnet
GB2430671A (en)*2005-09-302007-04-04Fujimi IncThermal spray powder including yttria
US7205662B2 (en)2003-02-272007-04-17Symmorphix, Inc.Dielectric barrier layer films
US20070110915A1 (en)*2005-11-022007-05-17Junya KitamuraThermal spray powder and method for forming a thermal spray coating
US7238628B2 (en)2003-05-232007-07-03Symmorphix, Inc.Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7378356B2 (en)2002-03-162008-05-27Springworks, LlcBiased pulse DC reactive sputtering of oxide films
US7404877B2 (en)2001-11-092008-07-29Springworks, LlcLow temperature zirconia based thermal barrier layer by PVD
US7469558B2 (en)2001-07-102008-12-30Springworks, LlcAs-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US20100000260A1 (en)*2006-12-072010-01-07Sandoz FredericMethod for fabricating a preform, a preform, an optical fiber and an amplifier
US7826702B2 (en)2002-08-272010-11-02Springworks, LlcOptically coupling into highly uniform waveguides
US7838133B2 (en)2005-09-022010-11-23Springworks, LlcDeposition of perovskite and other compound ceramic films for dielectric applications
US7959769B2 (en)2004-12-082011-06-14Infinite Power Solutions, Inc.Deposition of LiCoO2
US7993773B2 (en)2002-08-092011-08-09Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US8021778B2 (en)2002-08-092011-09-20Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US8045832B2 (en)2002-03-162011-10-25Springworks, LlcMode size converter for a planar waveguide
US8062708B2 (en)2006-09-292011-11-22Infinite Power Solutions, Inc.Masking of and material constraint for depositing battery layers on flexible substrates
US8197781B2 (en)2006-11-072012-06-12Infinite Power Solutions, Inc.Sputtering target of Li3PO4 and method for producing same
US8236443B2 (en)2002-08-092012-08-07Infinite Power Solutions, Inc.Metal film encapsulation
US8260203B2 (en)2008-09-122012-09-04Infinite Power Solutions, Inc.Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US8268488B2 (en)2007-12-212012-09-18Infinite Power Solutions, Inc.Thin film electrolyte for thin film batteries
US8350519B2 (en)2008-04-022013-01-08Infinite Power Solutions, IncPassive over/under voltage control and protection for energy storage devices associated with energy harvesting
US8394522B2 (en)2002-08-092013-03-12Infinite Power Solutions, Inc.Robust metal film encapsulation
US8404376B2 (en)2002-08-092013-03-26Infinite Power Solutions, Inc.Metal film encapsulation
US8431264B2 (en)2002-08-092013-04-30Infinite Power Solutions, Inc.Hybrid thin-film battery
US8445130B2 (en)2002-08-092013-05-21Infinite Power Solutions, Inc.Hybrid thin-film battery
US8508193B2 (en)2008-10-082013-08-13Infinite Power Solutions, Inc.Environmentally-powered wireless sensor module
US8518581B2 (en)2008-01-112013-08-27Inifinite Power Solutions, Inc.Thin film encapsulation for thin film batteries and other devices
US8599572B2 (en)2009-09-012013-12-03Infinite Power Solutions, Inc.Printed circuit board with integrated thin film battery
US8636876B2 (en)2004-12-082014-01-28R. Ernest DemarayDeposition of LiCoO2
US8728285B2 (en)2003-05-232014-05-20Demaray, LlcTransparent conductive oxides
US8906523B2 (en)2008-08-112014-12-09Infinite Power Solutions, Inc.Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US9334557B2 (en)2007-12-212016-05-10Sapurast Research LlcMethod for sputter targets for electrolyte films
US9634296B2 (en)2002-08-092017-04-25Sapurast Research LlcThin film battery on an integrated circuit or circuit board and method thereof
DE112014002520B4 (en)*2013-05-232018-06-21Osram Opto Semiconductors Gmbh Process for the preparation of a powdery precursor material, powdery precursor material and its use
CN108274003A (en)*2017-12-262018-07-13南京悠谷新材料科技有限公司A kind of preparation method of copper titanium composite material
US10385459B2 (en)2014-05-162019-08-20Applied Materials, Inc.Advanced layered bulk ceramics via field assisted sintering technology
US10680277B2 (en)2010-06-072020-06-09Sapurast Research LlcRechargeable, high-density electrochemical device
CN112300545A (en)*2020-10-132021-02-02汉班(天津)新材料有限公司PET (polyethylene terephthalate) foaming material master batch and preparation method thereof
US11047035B2 (en)2018-02-232021-06-29Applied Materials, Inc.Protective yttria coating for semiconductor equipment parts
CN114746377A (en)*2019-11-182022-07-12贺利氏科纳米北美有限责任公司Plasma resistant yttrium aluminum oxide objects

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JP4277973B2 (en)*2001-07-192009-06-10日本碍子株式会社 Yttria-alumina composite oxide film production method, yttria-alumina composite oxide film, and corrosion-resistant member
JP4723127B2 (en)*2001-07-232011-07-13日本特殊陶業株式会社 Alumina ceramic sintered body, method for producing the same, and cutting tool
US7371467B2 (en)*2002-01-082008-05-13Applied Materials, Inc.Process chamber component having electroplated yttrium containing coating
US7476634B2 (en)*2005-08-162009-01-13Covalent Materials CorporationYttria sintered body and manufacturing method therefor
US20080111186A1 (en)*2006-11-142008-05-15Translucent Photonics, Inc.Field-Effect Transistor Structure and Method Therefor
JP5466831B2 (en)*2008-04-282014-04-09株式会社フェローテックセラミックス Yttria sintered body and member for plasma process equipment
EP3003607B1 (en)*2013-06-042020-05-27H. C. Starck IncSlip and pressure casting of refractory metal bodies
CN111423236B (en)*2020-03-222021-05-14华南理工大学 A kind of (Hf0.25Ti0.25Zr0.25W0.25)N high-entropy ceramic powder and preparation method thereof

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JP2951771B2 (en)*1991-09-261999-09-20守 大森 Rare earth oxide-alumina-silica sintered body and method for producing the same
EP0722919B1 (en)*1995-01-191999-08-11Ube Industries, Ltd.Ceramic composite

Cited By (53)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6827826B2 (en)2000-08-072004-12-07Symmorphix, Inc.Planar optical devices and methods for their manufacture
US7469558B2 (en)2001-07-102008-12-30Springworks, LlcAs-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US7404877B2 (en)2001-11-092008-07-29Springworks, LlcLow temperature zirconia based thermal barrier layer by PVD
US7381657B2 (en)2002-03-162008-06-03Springworks, LlcBiased pulse DC reactive sputtering of oxide films
US8105466B2 (en)2002-03-162012-01-31Springworks, LlcBiased pulse DC reactive sputtering of oxide films
US8045832B2 (en)2002-03-162011-10-25Springworks, LlcMode size converter for a planar waveguide
US7544276B2 (en)2002-03-162009-06-09Springworks, LlcBiased pulse DC reactive sputtering of oxide films
US7413998B2 (en)2002-03-162008-08-19Springworks, LlcBiased pulse DC reactive sputtering of oxide films
US7378356B2 (en)2002-03-162008-05-27Springworks, LlcBiased pulse DC reactive sputtering of oxide films
US7993773B2 (en)2002-08-092011-08-09Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US8394522B2 (en)2002-08-092013-03-12Infinite Power Solutions, Inc.Robust metal film encapsulation
US9634296B2 (en)2002-08-092017-04-25Sapurast Research LlcThin film battery on an integrated circuit or circuit board and method thereof
US8431264B2 (en)2002-08-092013-04-30Infinite Power Solutions, Inc.Hybrid thin-film battery
US8236443B2 (en)2002-08-092012-08-07Infinite Power Solutions, Inc.Metal film encapsulation
US9793523B2 (en)2002-08-092017-10-17Sapurast Research LlcElectrochemical apparatus with barrier layer protected substrate
US8404376B2 (en)2002-08-092013-03-26Infinite Power Solutions, Inc.Metal film encapsulation
US8535396B2 (en)2002-08-092013-09-17Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US8445130B2 (en)2002-08-092013-05-21Infinite Power Solutions, Inc.Hybrid thin-film battery
US8021778B2 (en)2002-08-092011-09-20Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US7826702B2 (en)2002-08-272010-11-02Springworks, LlcOptically coupling into highly uniform waveguides
US7262131B2 (en)2003-02-272007-08-28Symmorphix, Inc.Dielectric barrier layer films
US7205662B2 (en)2003-02-272007-04-17Symmorphix, Inc.Dielectric barrier layer films
US8728285B2 (en)2003-05-232014-05-20Demaray, LlcTransparent conductive oxides
US7238628B2 (en)2003-05-232007-07-03Symmorphix, Inc.Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US20050019241A1 (en)*2003-07-232005-01-27Lyons Robert JosephPreparation of rare earth ceramic garnet
US7959769B2 (en)2004-12-082011-06-14Infinite Power Solutions, Inc.Deposition of LiCoO2
US8636876B2 (en)2004-12-082014-01-28R. Ernest DemarayDeposition of LiCoO2
US7838133B2 (en)2005-09-022010-11-23Springworks, LlcDeposition of perovskite and other compound ceramic films for dielectric applications
US8075860B2 (en)2005-09-302011-12-13Fujimi IncorporatedThermal spray powder and method for forming a thermal spray coating
US20070077363A1 (en)*2005-09-302007-04-05Junya KitamuraThermal spray powder and method for forming a thermal spray coating
GB2430671A (en)*2005-09-302007-04-04Fujimi IncThermal spray powder including yttria
US20070110915A1 (en)*2005-11-022007-05-17Junya KitamuraThermal spray powder and method for forming a thermal spray coating
US8062708B2 (en)2006-09-292011-11-22Infinite Power Solutions, Inc.Masking of and material constraint for depositing battery layers on flexible substrates
US8197781B2 (en)2006-11-072012-06-12Infinite Power Solutions, Inc.Sputtering target of Li3PO4 and method for producing same
US8720230B2 (en)*2006-12-072014-05-13Silitec Fibers SaMethod for fabricating an optical fiber preform
US20100000260A1 (en)*2006-12-072010-01-07Sandoz FredericMethod for fabricating a preform, a preform, an optical fiber and an amplifier
US8268488B2 (en)2007-12-212012-09-18Infinite Power Solutions, Inc.Thin film electrolyte for thin film batteries
US9334557B2 (en)2007-12-212016-05-10Sapurast Research LlcMethod for sputter targets for electrolyte films
US8518581B2 (en)2008-01-112013-08-27Inifinite Power Solutions, Inc.Thin film encapsulation for thin film batteries and other devices
US9786873B2 (en)2008-01-112017-10-10Sapurast Research LlcThin film encapsulation for thin film batteries and other devices
US8350519B2 (en)2008-04-022013-01-08Infinite Power Solutions, IncPassive over/under voltage control and protection for energy storage devices associated with energy harvesting
US8906523B2 (en)2008-08-112014-12-09Infinite Power Solutions, Inc.Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US8260203B2 (en)2008-09-122012-09-04Infinite Power Solutions, Inc.Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US8508193B2 (en)2008-10-082013-08-13Infinite Power Solutions, Inc.Environmentally-powered wireless sensor module
US9532453B2 (en)2009-09-012016-12-27Sapurast Research LlcPrinted circuit board with integrated thin film battery
US8599572B2 (en)2009-09-012013-12-03Infinite Power Solutions, Inc.Printed circuit board with integrated thin film battery
US10680277B2 (en)2010-06-072020-06-09Sapurast Research LlcRechargeable, high-density electrochemical device
DE112014002520B4 (en)*2013-05-232018-06-21Osram Opto Semiconductors Gmbh Process for the preparation of a powdery precursor material, powdery precursor material and its use
US10385459B2 (en)2014-05-162019-08-20Applied Materials, Inc.Advanced layered bulk ceramics via field assisted sintering technology
CN108274003A (en)*2017-12-262018-07-13南京悠谷新材料科技有限公司A kind of preparation method of copper titanium composite material
US11047035B2 (en)2018-02-232021-06-29Applied Materials, Inc.Protective yttria coating for semiconductor equipment parts
CN114746377A (en)*2019-11-182022-07-12贺利氏科纳米北美有限责任公司Plasma resistant yttrium aluminum oxide objects
CN112300545A (en)*2020-10-132021-02-02汉班(天津)新材料有限公司PET (polyethylene terephthalate) foaming material master batch and preparation method thereof

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