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US11981501B2 - Loading cassette for substrate including glass and substrate loading method to which same is applied - Google Patents

Loading cassette for substrate including glass and substrate loading method to which same is applied
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US11981501B2
US11981501B2US17/433,342US202017433342AUS11981501B2US 11981501 B2US11981501 B2US 11981501B2US 202017433342 AUS202017433342 AUS 202017433342AUS 11981501 B2US11981501 B2US 11981501B2
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target substrate
loading
substrate
supporting member
condition
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Sungjin Kim
Youngho RHO
Jincheol Kim
Byungkyu JANG
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Absolics Inc
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Absolics Inc
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Abstract

An embodiment relates to a loading cassette and a target substrate loading method to which same is applied. The loading cassette according to the embodiment comprises: an upper plate; a lower plate facing the upper plate while having a space therebetween; an edge support part for connecting the upper plate to the lower plate and supporting the left and right edges of a target substrate; and a rear surface support part for connecting the upper plate to the lower plate and supporting the center and the rear surface-edge of the target substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATION
This application is a U.S. National Stage Application of International Application No. PCT/KR2020/003480, filed on Mar. 12, 2020 which has the benefit of priority to US Provisional Patent Application No. 62/816,984, filed on Mar. 12, 2019, U.S. Provisional Patent Application No. 62/816,995, filed on Mar. 12, 2019, U.S. Provisional Patent Application No. 62/826,105, filed on Mar. 29, 2019, U.S. Provisional Patent Application No. 62/826,122, filed on Mar. 29, 2019, and U.S. Provisional Patent Application No. 62/826,144, filed on Mar. 29, 2019, and all content of the basis application of the above priority is incorporated by the content of this application.
FIELD
An embodiment relates to a loading cassette of a substrate including glass and a method of loading a substrate applied with the same.
RELATED ART
A cassette is applied to transfer and store many substrates easily, accurately, and harmoniously. In general, a cassette allows many substrates to be loaded in up and down with space from each other in the inside of a frame whose one side surface is opened. And a method of withdrawing these loaded substrates for proceeding of work of the substrates and after that inserting the substrates processed by the work into a cassette again is carried out.
A glass substrate for semiconductor packaging is utilized for a high-end packaging substrate, and forms multiple vias in a thin glass substrate for utilizing as a packaging substrate. A glass substrate with a comparatively thin thickness may be fragile to vibration or impact due to its properties, and in a case of a glass substrate with a large area, a sag may occur in a high possibility inside a cassette due to own weight and this may accelerate damage of the glass substrate.
The background art described above is a technical information which has been kept by inventors for deriving example embodiments, or found in a process of deriving example embodiments, and is not necessarily a known art opened to general public before the present application.
RELATED ART DOCUMENTSPatent Documents
Model Utility Right No. 20-0266536 (2002.02.19.)
Korean Patent Publication No. 10-2001-0107033 (2001.12.07.)
DISCLOSURETechnical Problem
Objectives of an embodiment is to provide a loading cassette minimizing impact transmitted to a substrate including glass and particularly being suitable for loading and moving of a glass substrate with a large area, and a method of loading a substrate applied with the same.
Technical Solution
To achieve the above objectives, a loading cassette according to one embodiment includes
an upper plate,
a lower plate facing to the upper plate with an interval,
a loading space between the upper plate and the lower plate and a target substrate being disposed in,
an edge supporting unit for connecting the upper plate and the lower plate and supporting left and right edges of the target substrate, and
a rear supporting unit for connecting the upper plate and the lower plate and supporting a rear edge of the target substrate,
wherein the rear supporting unit includes
a rear frame being connecting the upper plate and the lower plate in a rear surface and
a middle supporting member being protruding to the front direction from the rear frame,
the target substrate is a substrate including a glass substrate which includes or does not include a through hole, and
the middle supporting member controls a maximum sag of the target substrate based on the edge supporting unit (as 0 mm) within 3 mm.
In one embodiment, when a thickness (mm) of the target substrate is expressed as GT, D1 is a distance (mm) between one side of the edge supporting member and the middle supporting unit and the D1 may satisfy below Condition (1) or Condition (2);
When 0.1<GT≤0.5,150≤D1≤275  Condition (1):
When 0.5<GT≤1.5,220≤D1≤330.  Condition (2):
In one embodiment, the middle supporting member may include a middle supporting bar, wherein the middle bearing member is disposed at one part of the middle supporting member and the rear frame is near to other part of the middle supporting member, the middle bearing member may be disposed to have gradient to be higher than the other part.
In one embodiment, the edge supporting unit may include
a side frame being connecting the upper plate and the lower plate in both left and right sides respectively, and
an edge supporting member forming a side slot disposed in the rear frame to support the left and right edges of the target substrate and not allowing the target substrate to contact the side frame,
the side slot may be formed in plurality along an up-and-down direction of the side frame with having intervals.
In one embodiment, the middle supporting member may include
a connecting block combined with the rear frame, and
a middle supporting bar being protruding to the front from the connecting block, wherein the left-and-right width of the middle supporting bar is narrower as being distant from the connecting block,
wherein the middle bearing member may be disposed in the middle supporting bar in a number of one, two, or more.
In one embodiment, a length of the middle supporting bar may be ⅓ to ⅔ of the back-and-forth length of the loading space.
In one embodiment, the rear supporting unit may include
a rear frame being connecting the upper plate and the lower plate at the rear surface and having rear inserting slots formed in a left-and-right direction,
a middle supporting member being protruding to the front direction from the rear frame and being combined with the rear inserting slots and having a first area portion and a second area portion, and
a middle bearing member being protruding from the upper surface of the middle supporting member and directly connecting the target substrate to control sag of the target substrate,
wherein the first area portion may be connected to the rear frame and the area of the second area portion may be narrower than the area of the first area portion.
To achieve the above objectives, a method of loading a target substrate according to one embodiment includes
an entering step for carrying in a target substrate to a loading space of a loading cassette;
a supporting step for moving the entire target substrate by fixing at a loading carrier to the loading space with left and right edges of the target substrate placed on an edge supporting unit of the loading cassette according toclaim1 and controlling a maximum sag of the target substrate to be within 3 mm based on the edge supporting unit (as 0 mm) by supporting the target substrate with a middle supporting member in at least one point or more of the middle; and
a completing step for releasing the fixation of the loading carrier and the target substrate,
wherein the target substrate includes a glass substrate with or without a through hole, and
when the thickness (mm) of the target substrate is expressed as GT, D1 which is a distance (mm) between one side of the edge supporting member and the middle supporting member may satisfy below Condition (1) or Condition (2);
When 0.1<GT≤0.5,150≤D1≤275  Condition (1):
When 0.5<GT≤1.5,220≤D1≤330.  Condition (2):
To achieve the above objectives, a method of loading a target substrate according to other embodiment includes
a carry-in step for allowing the entire target substrate to enter and be disposed inside a loading space, in which the target substrate is polygonal having L as the length (mm) and W as the width (mm) is carried in the loading space of a cassette, by applying a loading carrier having two or more hands with maintaining variation (D) indicated by below Formula (1) within −15 to +10 mm;
a support step for controlling a maximum sag of the target substrate to be within 3 mm based on the edge supporting unit (as 0 mm) by supporting the target substrate with a middle supporting member in at least one point or more of the middle; and
a completion step of releasing the fixation of the loading carrier and the target substrate and then taking out the loading carrier to the external of the loading cassette,
wherein the target substrate is a glass substrate having many through holes or a substrate for semiconductor packaging in which an electrical conductive pattern and an insulating layer are laminated to the glass substrate, and
when a thickness (mm) of the target substrate is GT, the hands have one or more hand forks respectively and Wa2 (mm) is the shortest interval between hand forks placed on different hands; and below Condition (1) or Condition (2) may be satisfied;
Variation (D)=Inside Height of Target Substrate (Hin,mm)−Outside Height of Target Substrate (Hout,mm)  Equation (1):
When 0.1<GT≤0.5,(W/3.4)≤Wa2≤(W/1.8)  Condition (1):
When 0.5<GT≤1.5,(W/2.3)≤Wa2≤(W/1.6).  Condition (2):
In one embodiment, when the thickness (mm) of the target substrate is GT, Dh (mm) which is an interval between the edge supporting units neighboring to each other in up and down may satisfy below Formula (2);
EFFECTS
According to example embodiments of present application, a cassette which can load a target substrate without occurring a sag of a target substrate and a problem of damage in a substrate due to the sag can be provided, as minimizing damage which can occur during loading, moving, and carrying out of glass even though the target substrate including a glass substrate of a large area with or without a through hole. In addition, a target substrate placed in a loading space can stably keep a loaded state through being supported by an edge supporting unit and a rear supporting unit, and can be protected from impact which can occur during loading, impact added from the external, and the like.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG.1 is a perspective view for showing a loading cassette according to an embodiment of the present application;
FIG.2 is a schematic view for showing a state of a glass substrate loaded in a loading cassette ofFIG.1;
FIG.3 is a cross sectional view cut along a III-III line fromFIG.2;
FIG.4 is an enlarged view of A portion ofFIG.3;
FIG.5 is an enlarged view of a center supporting unit ofFIG.3;
FIG.6 is a perspective view for showing a loading cassette according to one embodiment of the present application;
FIG.7 is a schematic view for showing a glass substrate loaded in a loading cassette ofFIG.6;
FIG.8 is a cross sectional view cut along a VI-VI line fromFIG.7;
FIG.9 is an enlarged view of A portion ofFIG.8;
FIG.10 is an enlarged view of a center supporting unit ofFIG.8;
FIG.11 is a side view for showing a center supporting unit ofFIG.10; and
FIG.12 is a schematic view for showing a state of a center supporting unit ofFIG.11 supporting a glass substrate.
FIG.13 is a conceptual view for illustrating a fork test conducted in the present application;
FIGS.14A and14B are conceptual views for illustrating a loading carrier and a target substrate of the present application, and a sag observed at a-a′, respectively;
FIG.15 is a conceptual view for illustrating a process for a target substrate placed on a loading carrier to be inserted into a loading space;
DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that they can be easily practiced by those skilled in the art to which the present disclosure pertains. The embodiments may, however, be embodied in many different forms and is not to be construed as being limited to the embodiments set forth herein. Same reference numerals are designated to similar elements throughout the specification.
Throughout the present specification, the phrase “combination(s) thereof” included in a Markush-type expression denotes one or more mixtures or combinations selected from the group consisting of components stated in the Markush-type expression, that is, denotes that one or more components selected from the group consisting of the components are included.
Throughout the present specification, terms such as “first,” “second,” “A,” or “B” are used to distinguish the same terms from each other. The singular forms “a,” “an,” and “the” include the plural form unless the context clearly dictates otherwise.
In the present specification, the term “X-based” may mean that a compound includes a compound corresponding to X or a derivative of X.
In the present specification, “B being disposed on A” means that B is disposed in direct contact with A or disposed over A with another layer interposed therebetween and thus should not be interpreted as being limited to B being disposed in direct contact with A.
In the present specification, “B being connected to A” means that B is connected to A directly or through another element therebetween, and thus should not be interpreted as being limited to B being directly connected to A, unless otherwise noted.
In the present specification, a singular form is contextually interpreted as including a plural form as well as a singular form unless specially stated otherwise.
In this application, sag is evaluated for a position of a sagged portion from the reference position by mm unit, and expressed in a positive number.
Loading Cassette1
A loading cassette according to one embodiment will be described with reference toFIGS.1 to5.
FIG.1 is a perspective view for showing a loading cassette according to an embodiment of the present application,FIG.2 is a schematic view for showing a state of a glass substrate loaded in a loading cassette ofFIG.1,FIG.3 is a cross sectional view cut along a III-III line fromFIG.2,FIG.4 is an enlarged view of A portion ofFIG.3, andFIG.5 is an enlarged view of a center supporting unit ofFIG.3.
With reference toFIGS.1 to5, aloading cassette1 according to the present embodiment supports a loaded target substrate G and the like, and comprises anupper plate10, alower plate20, anedge supporting unit40, and arear supporting unit50.
Theloading cassette1 may further comprise afront stopper60.
Theupper plate10 and thelower plate20 have a predetermined area and are apart from each other in an up-and-down direction. Thelower plate20 may be formed by many frames connected in breadth and length directions.
Theupper plate10 and thelower plate20 have an interval maintained by anedge supporting unit40 and arear supporting unit50. And, among them, aloading space30 where a target substrate G is loaded is formed. Here, a loading capacity of theloading space30 may be changed depending on the sizes of theupper plate10 and thelower plate20; and the up-and-down direction lengths of theedge supporting unit40 and therear supporting unit50. The loading capacity, in particularly the sizes of theupper plate10 and thelower plate20 may be changed depending on the standard of the target substrate G.
The target substrate G may be a substrate with a large area, and may be a glass substrate whose thickness is 1 mm or less, or a substrate in which an insulating layer and/or an electrical conductive layer are formed on the glass substrate (or glass substrate having through vias).
The target substrate G may substantially have a quadrangle plate form whose one side is 400 mm or more, but its shape is not limited to a quadrangle plate form.
A target substrate G may have a first surface and a second surface facing each other.
A target substrate G may have a plurality a core via penetrating through the first surface and the second surface.
The core via may include a first opening part in contact with the first surface; a second opening part in contact with the second surface; and a minimum inner diameter part having the smallest inner diameter in the entire core via from the first opening part to the second opening part.
An average diameter of the minimum inner diameter part may be 50 μm to 95 μm.
The minimum inner diameter and satisfies the condition ofEquation 1 below.
0.83×D90≤D50≤1.25×D10  [Equation 1]
In theEquation 1, D50is a value corresponding to 50% in the diameter distribution of the minimum inner diameter, D90is a value corresponding to 90% in the diameter distribution of the minimum inner diameter, and D10is a value corresponding to 10% in the diameter distribution of the minimum inner diameter.
An average diameter of the minimum inner diameter may be 55 μm to 85 μm, or 60 μm to 70 μm.
In further detail, the minimum inner part may satisfy the condition of Equation 1-1 below.
0.83×D90≤D50≤1.25×D10  [Equation 1-1]
In the Equation 1-1, D50is a value corresponding to 50% in the diameter distribution of the minimum inner part, D90is a value corresponding to 90% in the diameter distribution of the minimum inner part, and D10is a value corresponding to 10% in the diameter distribution of the minimum inner part.
In detail, a target opening part which is a larger one between the first surface opening part diameter and the second surface opening part diameter, may have an average diameter of 70 μm to 120 μm.
In detail, a target opening part which is a larger one between the first surface opening part diameter and the second surface opening part diameter may satisfy the condition ofEquation 2 below.
0.9×D90≤D50≤1.1×D10  [Equation 2]
In theEquation 2, D50is a value corresponding to 50% in the diameter distribution of a target opening part, D90is a value corresponding to 90% in the diameter distribution of a target opening part, and D10is a value corresponding to 10% in the diameter distribution of a target opening part.
In detail, a target opening part which is a larger one between the first surface opening part diameter and the second surface opening part diameter, may have an average diameter of 80 μm to 105 μm.
In detail, a target opening part which is a larger one between the first surface opening part diameter and the second surface opening part diameter may satisfy the condition of Equation 2-1 below.
0.92×D90≤D50≤1.08×D10  [Equation 2-1]
In theEquation 2, D50is a value corresponding to 50% in the diameter distribution of a target opening part, D90is a value corresponding to 90% in the diameter distribution of a target opening part, and D10is a value corresponding to 10% in the diameter distribution of a target opening part.
In the core via, an average diameter of a target opening part which is a larger one between the first surface opening part diameter—which is a diameter at an opening part in contact with the first surface—and the second surface opening part diameter—which is a diameter at an opening part in contact with the second surface—may have a larger value than D50, which is a value corresponding to 50% in the diameter distribution of a target opening part.
The diameter distribution described above, is evaluated based on a diameter which is observed and measured by microscope in the cross-section, after dividing prepared samples into 9 compartments (3×3), and processing of cutting the samples of 5 areas (top left, bottom left, center, top right, bottom right).
Aloading cassette1 according to an embodiment may load stably a target substrate which has a core via with the above-described diameter distribution and diameter.
In addition, the point at which the minimum inner diameter part is located, when the entire length of the core via is 100%, may be a point of 40% to 60% from the first opening part, and may be a point of 45% to 55%. When the minimum inner diameter part is at the position described above, based on the entire length of core via, the design of electrically conductive layer of packaging substrate and the process of forming electrically conductive layer may be easier. And a loading cassette according to an embodiment can load this fragile target substrate stably.
The core via may be disposed in the number of 100 to 3000, or 100 to 2500, or 225 to 1024 based on a unit area (1 cm×1 cm) of the target substrate. The core via may be disposed at the target substrate in a pitch of 1.2 mm or less, may be disposed in a pitch of 0.12 to 1.2 mm, may be disposed in a pitch of 0.3 to 0.9 mm.
When the core via satisfies the above pitch condition, the formation of an electric conductive layer, etc., and the performance of a packaging substrate can be improved. And a loading cassette according to an embodiment can load this fragile target substrate stably.
The target substrate G may be a stress-controlled glass substrate.
The target substrate G may have a stress difference value (P) according to the below Formula (1) of 1.5 MPa or less; between a stress measured at a plain line which is a line linking places where the core via is not formed, and a stress measured at a via line which is a line linking places where the core via is formed.
P=Vp−Np  Formula (1)
In the Formula (1), the P is a stress difference value measured at the same glass substrate, the Vp is a difference between the maximum value and the minimum value of stress measured at a via line, and the Np is a difference between the maximum value and the minimum value of stress measured at a plain line.
The P value may be 1.35 MPa or less, 1.2 MPa or less, or 1.1 MPa or less. Also, the P value may be 0.01 MPa or more, or 0.1 MPa or more.
As a glass substrate in which core vias having a stress difference value (P) in these ranges are formed is applied as a substrate for semiconductor packaging, it is possible to manufacture a packaging substrate having more stable mechanical properties, and a loading cassette according to an embodiment can load this fragile target substrate stably.
The Vp value may be 2.5 MPa or less, or 2.3 MPa or less, and the Vp value may be 2.0 MPa or less, or 1.8 MPa or less. Also, the Vp value may be 0.2 MPa or more, or 0.4 MPa or more.
When a difference (Vp) between the maximum value and the minimum value of stress measured at a via line is in these ranges, and a glass substrate where core vias are formed is applied as a substrate for semiconductor packaging, it is possible to manufacture a packaging substrate having more stable mechanical properties. And a loading cassette according to an embodiment can load this fragile target substrate stably.
The Np value may be 1.0 MPa or less, 0.9 MPa or less, or 0.8 MPa or less. Also, the Np value may be 0.1 MPa or more, or 0.2 MPa or more.
When a difference (Np) between the maximum value and the minimum value of stress measured at a plain line is in these ranges, and a glass substrate where core vias are formed is applied as a substrate for semiconductor packaging, it is possible to manufacture a packaging substrate having more stable mechanical properties. And a loading cassette according to an embodiment can load this fragile target substrate stably.
The glass substrate may satisfy a condition that a stress difference ratio (K) according to below Formula (2) is 6 or less.
K=Lp/La  Formula (2):
In the Formula (2), the K is stress difference ratio measured at the same plane of the same glass substrate, the Lp is a difference of the maximum value and the minimum value of stress measured at a target line, and the La is an average value of stress measured at the target line, wherein the target line is selected one from a plain line which is a line linking places where a core via is not formed and a via line which is a line linking places where a core via is formed.
In detail, the K value may be 5 or less, 4.5 or less, or 4 or less. When the K value is in this range, and a target substrate where core vias are formed is applied as a substrate for semiconductor packaging, it is possible to manufacture a packaging substrate having more stable mechanical properties. And a loading cassette according to an embodiment can load this fragile target substrate stably.
The stress difference ratio (K) which is measured at the plain line may have a value of 2 or less. In detail, the stress difference ratio (Kn) of a plain line may be 1.8 or less, more than 0.3, or more than 0.5.
The stress difference ratio (K) which is measured at the via line may have a value of 6 or less, or 5 or less. The stress difference ratio (Kv) of a via line may be 4.5 or less, or 3 or less. Also, the stress difference ratio of a via line may be 0.5 or more, 1.0 or more, or 1.5 or more.
When the stress difference ratio (K) is in these ranges, and a target substrate where core vias are formed is applied as a substrate for semiconductor packaging, it is possible to manufacture a packaging substrate having more stable mechanical properties. And a loading cassette according to an embodiment can load this fragile target substrate stably.
The stress is analyzed by applying a birefringence 2D evaluation device. In detail, the birefringence 2D dispersion evaluation device may be WPA-200 device of NPM (NIPPON PULSE KOREA CO., LTD). In detail, when data are read on a glass substrate along to a stress measuring route by a probe, measured values such as a birefringence value are inputted by the device, and stress at a measuring route is presented by pressure unit (ex. MPa) through a predetermined calculation process. In this time, stress can be measured by inputting a stress-optical coefficient and a thickness of a measuring target, and 2.4 is applied as the stress-optical coefficient in the present disclosure.
Theedge supporting units40 are arranged in a back-and-forth direction (Y) at both left and right sides of theupper plate10 and thelower plate20, and connect theupper plate10 and thelower plate20. And theedge supporting units40 support the edges of both left and right sides of the target substrate G.
Theedge supporting unit40 may comprise a buffer covering layer placed in at least a part of its surface.
Therear supporting unit50 connects theupper plate10 and thelower plate20 by being disposed at the rear of theupper plate10 and thelower plate20.
Therear supporting unit50 is disposed with having a certain distance with the center of the rear or theedge supporting unit40, and thereby controls the target substrate G loaded in theloading space30 not to be sagged by its own weight. In detail, therear supporting unit50 supports at least a part of the target substrate G and thereby prevents the target substrate G overall from sagging.
Thefront stopper60 blocks the target substrate G loaded in theloading space30 not to fall off to the external of theloading space30 at the front of theloading space30.
Thefront stopper60 may comprise a buffer covering layer placed in at least a part of its surface.
The target substrate G of theloading space30 can maintain a stable loaded state by theedge supporting unit40 and therear supporting unit50. And the target substrate G of the loading space can be protected stably from impact which may occur during loading, impact added from external, and the like. Accordingly, damage of the target substrate G which may occur during loading and moving of the target substrate could be minimized.
Theedge supporting unit40 comprises aside frame41, and anedge supporting member42.
Theside frame41 has a predetermined length, its upper side is combined with a side surface of theupper plate10 and its lower side is combined with a side surface of thelower plate20.
Theside frame41 is combined with a fastening means (not shown) like a bolt.
Theside frame41 may be formed with aluminum coated or not coated by a protecting layer or the like. A material of theside frame41 is not limited to aluminum.
Theedge supporting member42 is connected to theside frame41.
Theedge supporting members42 are arranged along an up-and-down direction (Z) of theside frame41 with intervals. Accordingly, aside slot421 is formed between theedge supporting members42 neighboring to each other. A target substrate G inserted to theside slot421 is placed in an upper surface of theedge supporting member42. On the other hand, neighboringedge supporting members42 are connected from each other and their sides are not allowed to contact theside frame41 when the target substrate G is loaded. And theedge supporting member42 may comprise a buffer covering layer in at least a part of the surface thereof.
Therear supporting unit50 may comprise arear frame51, amiddle supporting member52, amiddle bearing member53 and arear stopper54.
Therear frame51 has a predetermined length, its upper side is combined with the rear surface of theupper plate10 and its lower side is combined with the rear surface of thelower plate20.
Therear frame51 is also combined through a fastening means and may be formed with aluminum coated or not coated by a protecting layer or the like.
Therear frame51 may comprise a rearmain bar511 in which holding slots where the connecting blocks are placed are formed along an up-and-down length direction, and astopper combining bar512 which is extended from both sides of the rear main bar to both left and right sides and combined with the rear stopper.
The rearmain bar511 may comprise a holding slot511aconnected to aloading space30. The holding slot511amay be formed along an up-and-down length direction (Z) of the rearmain bar511, and the area of the holding slot511amay become wider in a direction from the inner surface to the opened front.
Thestopper combining bar512 is extended in a left-and-right direction (X) from both sides of the rearmain bar511 and has a preset area.
Thestopper combining bar512 has a plane.
Thestopper combining bar512 is composed in one body with the rearmain bar511 and made with aluminum or the like which is coated or not coated.
Themiddle supporting member52 may comprise a connectingblock521 and amiddle supporting bar522.
The connectingblock521 is placed in a holding slot511aand fixed with a fastening means (not shown).
The connectingblock521 may be not dislocated from the holding slot511a. That is, the connectingblock512 may be placed inside the connectingblock521.
Themiddle supporting bar522 has a preset length, is connected to the rearmain bar511 by the connectingblock521, and protrudes from the connectingblock521 to the front.
The length of themiddle supporting bar522 is equal to or shorter than the length of theloading space30 in a back-and-forth direction Y, and in detail may be formed to be shorter. In detail, the length of the middle supporting bar may be ⅓ to ⅔, or ⅖ to ⅘ of the length from the front to the rear.
Themiddle supporting bar522 supports a target substrate G from at least one or more points, and the supporting point is exemplified as amiddle bearing member53 described in below, but may support the target substrate by oneself.
The position of themiddle supporting bar522 may become gradually high as being far from a connectingblock522, and thereby the height at one point where amiddle supporting bar522 and a target substrate G meet may be higher compared to aside slot421 placed in a position neighboring to each other.
This is considered that a middle supporting bar itself may sag slightly as some of the own weight of a target substrate is added to amiddle supporting bar522 at one point where themiddle supporting bar522 meets the target substrate. Additionally, when themiddle supporting bar522 itself is equipped to have a higher height than aside slot421 placed in a position corresponding to this without such a gradient applied, it may increase a possibility of occurring damage or stain of a target substrate because a contact with amiddle supporting bar522 is caused even in a portion where sag is comparatively small in a target substrate.
That is, some of the own weight of a target substrate is harmoniously dispersed by themiddle supporting bar522 in this manner, and a sag of the target substrate can be more alleviated.
When themiddle supporting bar522 supports a target substrate G from at least one point or more, the variation of the height thereof can be controlled within 3 mm compared to when themiddle supporting bar522 does not support a target substrate G.
For controlling sag to occur within the degree of variation of the height described above in themiddle supporting bar522, the thickness of themiddle supporting bar522 can be modified, and the angle can be modified.
In detail, themiddle supporting bar522 may have a shape in which the area in one side which meets the target substrate is narrower and the area becomes wider as being close to a connectingblock521.
In detail, themiddle supporting bar522 itself or the upper surface thereof may be gradient in a certain angle. The upper surface of themiddle supporting member52 may have an angle at a point which a line from one end combined with the connectingblock521 to the other end contacting with the target substrate and a line parallel to the upper plate or the lower plate meet, and the angle may be 0.1 to 5 degree, or 0.1 to 3 degree. In such a case, a sag of amiddle supporting bar522 can be controlled and a sag of a target substrate G can be more efficiently controlled.
Themiddle supporting members52 may be made with aluminum or the like which is coated or not coated, and are being arranged in an up-and-down direction (Z) in aloading space30. The arranging interval ofmiddle supporting members52 may be substantially the same with the arranging interval ofedge supporting members42.
Themiddle bearing member53 is arranged in an upper surface of amiddle supporting bar522 to protrude to an upper portion and in contact with the center portion of a target substrate G.
Themiddle bearing members53 may be arranged in 1, 2, or more with having intervals along a length direction (Y) of amiddle supporting bar522.
Themiddle bearing member53 may comprise a buffer covering layer placed on at least a part of the surface thereof.
Themiddle supporting member53 may support some of a target substrate of aloading space30 on amiddle supporting member52 along a length direction (Y) thereof, and the target substrate G may control sag of the target substrate which may occur in aloading space30.
When a thickness of a target substrate is GT, D1 which is a distance (mm) between one side of the edge supporting member and the middle supporting member can satisfy a below Condition (1) or Condition (2).
When 0.1<GT≤0.5,150≤D1≤275  Condition (1):
When 0.5<GT≤1.5,220≤D1≤330  Condition (2):
In further detail when the thickness (mm) of the target substrate is GT, D1 which is a distance (mm) between one side of the edge supporting member and the middle supporting member can satisfy a below Condition (1-1) or Condition (2-1).
When 0.2<GT≤0.5,200≤D1≤275  Condition (1-1):
When 0.5<GT≤1.2,230≤D1≤300  Condition (2-1):
Themiddle supporting member52 can control the maximum sag of the target substrate based on the edge supporting unit (0 mm) within 3 mm.
A sag which occurs when themiddle supporting member52 supports the target substrate can be controlled within 3 mm based on when themiddle supporting member52 does not support the target substrate (0 mm).
In further detail, the target substrate G may be a glass substrate or a glass substrate in which a through hole is formed, and a thickness of it may be 0.25 to 0.45 mm D1 as a distance between one end within theedge supporting member42 and themiddle supporting member52 may be applied to be 200 to 275 mm. In such a case, a sag of a target substrate may be controlled within 2 mm, and the target substrate may be stored and moved more stably.
In further detail, the target substrate may be a glass substrate with through holes which has a metal plating layer and/or an insulting layer formed on at least one surface, and the total average thickness may of the target substrate be 0.3 to 1.2 mm, or 0.5 to 0.9 mm D1 as a distance between one end within the edge supporting member and the middle supporting member may be applied to be 230 to 300 mm. In such a case, sag of the target substrate may be controlled within 1 mm, and the target substrate may be stored and moved more stably.
In further detail, the target substrate G may be a glass substrate having a cavity structure or a glass substrate having a cavity structure and through holes, and the thickness of a thick portion not having a cavity structure may be 0.4 to 1 mm, or 0.5 to 0.9 mm. Also, D1 as a distance between one end of the edge supporting member and the middle supporting member may be applied to be 200 to 275 mm. In such a case, a sag of a target substrate may be controlled within 2 mm, and the target substrate may be stored and moved more stably.
In further detail, the target substrate G may be a glass substrate having the cavity structure in which a metal plating layer and/or an insulting layer is formed on at least one surface, and the total average thickness of the target substrate may be 0.5 to 1.3 mm, or 0.7 to 1.2 mm D1 as a distance between one end within theedge supporting member42 and themiddle supporting member52 may be applied to be 230 to 300 mm. In such a case, a sag of a target substrate may be controlled within 1 mm, and the target substrate may be stored and moved more stably.
Arear stopper54 is disposed in aloading space30 and connected to astopper combining bar512.
Therear stoppers54 are arranged along to an up-and-down length direction (Z) of astopper combining bar512. Between neighboringrear stoppers54, arear slot541 where a target substrate G is inserted is prepared, and the neighboringrear stoppers54 are connected from each other. Here, an edge of a rear portion of a target substrate G may be disposed on an upper surface of arear stopper54. In addition, the neighboringrear stoppers54 are connected from each other. Accordingly, the rear part of a target substrate G disposed in arear slot541 is not in contact with astopper combining bar512. Therear stopper54 may comprise a buffer covering layer in at least a part of the surface thereof.
Afront stopper60 may comprise abar member61, aspacer62, arod member63, and astopper member64.
Thespacer62 is protruding to the front by being connected to anedge supporting unit40 placed in the front.
Thespacers62 may be arranged along an up-and-down direction (Z) of theedge supporting unit40.
Thebar member61 has a predetermined length and is being connected to thespacer62.
Thebar member61 faces to theedge supporting unit40 with having an interval by aspacer62.
Therod member63 is being extended to the front from thebar member61 to the edge supporting unit supporting a target substrate G.
Thestopper member64 faces the front (a thickness surface) of a target substrate G placed in theedge supporting member42 with protruding to an up-and-down direction (Z) from an end portion of therod member63. The front of the target substrate G placed in theedge supporting member42 is caught by thestopper member64 and not to be fallen off to the front.
Thefront stopper60 may be arranged along an up-and-down direction of theedge supporting unit40.
Thefront stopper60 may comprise a buffer covering layer placed in at least a part of the surface thereof.
The buffer covering layer may be overall placed in portions contacting with a target substrate G loaded in aloading space30, so that damage of the target substrate G, which can occur in loading or carrying our procedure, can be minimized. Also, when cassette is migrated with taking the target substrate G placed in aloading space30, a movement or damage of the target substrate G could not occur substantially. Accordingly, a loadability of the target substrate G can be increased and a reliability of the loading cassette can be increased.
The buffer covering layer may comprise PTFE (Poly Tetra Fluoro Ethylene), FEP (Flourinated Ethylene Prophylene), PFA (Per Fluoro Alkoxy), or PEEK (polyaryletherketone), and specifically may comprise PEEK (polyaryletherketone).
Theloading cassette1 according to the present disclosure may further comprise aloading carrier70 for loading a target substrate G in aloading space30, or pulling the loaded target substrate G out.
Theloading cassette1 may be one cassette alone, or may be a cassette unit (not shown) formed by stacking theloading cassette1 in a side direction and/or up-and-down direction. When the cassette unit is formed to be applied to storage and migration of a target substrate, a fixing means (not shown) for fixing the loading cassettes neighboring to each other may be further applied, and the fixing means can be applied without limit if it does not disturb insertion and storage of the target substrate.
Theloading carrier70 is being connected to a robot arm (not shown) or the like, and can fix a target substrate G by an absorption method.
Theloading carrier70 allows the target substrate G to be inserted in aside slot421 and places it on anedge bearing member43. On the contrary to this, a target substrate G placed on theedge bearing member43 is lifted for the loaded target substrate G to be carried out from theloading space30.
When theloading carrier70 makes a target substrate G be placed on a depressurizing pad and after that the target substrate G be absorbed, fixed, and moved. For being detached subsequently, a method of releasing a pressure of the depressurizing pad can allow the target substrate G to be separated. In this time, when the depressing pad and the target substrate is not separated properly, compressed air may be added to the depressurizing pad to separate the depressurizing pad and the target substrate more easily.
Loading Cassette2
With reference toFIGS.6 to12, another embodiment of theloading cassette2 will be described.
FIG.6 is a perspective view for showing a loading cassette according to one embodiment of the present application,FIG.7 is a schematic view for showing a target substrate loaded in a loading cassette ofFIG.6,FIG.8 is a cross sectional view cut along a VIII-VIII line fromFIG.7,FIG.9 is an enlarged view of A portion ofFIG.8,FIG.10 is an enlarged view of a rear supporting unit ofFIG.8, andFIG.11 is an side view for showing a rear supporting unit ofFIG.10.FIG.12 is a schematic view for showing a state of a rear supporting unit ofFIG.11 supporting a target substrate.
With reference toFIGS.6 to12, aloading cassette2 according to another example embodiment comprises anupper plate10, alower plate20, anedge supporting unit40 and arear supporting unit50. Here, theupper plate10 and thelower plate20 is same as an upper plate and a lower plate of aloading cassette1 described above according toFIGS.1 to7, and thus the further description is omitted.
Anedge supporting unit40 comprises aside frame41, anedge supporting member42, and anedge bearing member43. And arear supporting unit50 comprises arear frame51, amiddle supporting member52, and amiddle bearing member53.
Theside frame41 connects theupper plate10 and thelower plate20. And a surface of theside frame41 connected to aloading space30,side inserting slots411 are formed in a back-and-forth direction (Y). Theside inserting slots411 are formed in plurality with having intervals along an up-and-down length direction (Z) of aside frame41.
Theedge supporting member42 is combined to theside inserting slots411 and protruding to aloading space30.
An upper surface and a side surface of theedge supporting member42 faces to a target substrate G.
Theedge bearing member43 protrudes from the upper surface of theedge supporting member42 to an upper portion.
Theedge bearing members43 are arranged along a length direction (Y) of theedge supporting member42.
Theedge bearing member43 may comprise a buffer covering layer placed in at least a part of the surface thereof. Theedge supporting member42 may also comprise a buffer covering layer placed in at least a part of the surface thereof.
Such anedge supporting unit40 has a composition and an acting effect corresponding to the edge supporting unit according to embodiments ofFIGS.1 to7 and thus the further description is omitted.
Arear supporting unit50 may comprise arear frame51, amiddle supporting member52, and amiddle bearing member53.
Therear frame51 connects anupper plate10 and alower plate20. In a surface of therear frame51 connected to aloading space30,rear inserting slots513 may be formed in a left-and-right direction (X). Here, aside inserting slot411 and arear inserting slot513 may be formed in the same position based on thelower plate20.
Themiddle supporting member52 is combined with the rear insertingslot513 and protrudes in a front direction from therear frame51.
Themiddle supporting member52 may face to a sagged portion of a target substrate G, and for example, may face to the center portion.
Themiddle supporting member52 may have afirst area portion523 and asecond area portion524 whose area is narrower than thefirst area portion523. Here, the length of thesecond area portion524 may be longer than the length of thefirst area portion523.
The total length of themiddle supporting member52 may be one-half or more of the front-and-rear length of atarget space30.
The gradient of themiddle supporting member52 may be gradient in a lower direction from thesecond area portion524 to thefirst area portion523. That is, themiddle supporting member52 may have a gradually gradient shape to a lower direction from the front to the rear. In this case, even though a sag of a target substrate occurs, a portion directly contacting with themiddle supporting member52 can be reduced, and the possibility of occurring damage of the target substrate can be reduced.
The upper surface of themiddle supporting member52 may have gradient in a certain angle. In detail, the upper surface of themiddle supporting member52 may have an angle at a point where a line one end combined with the rear insertingslot513 and the other end contacting with the target substrate and a line parallel to the upper plate or the lower plate meet, and the angle may be 0.1 to 10 degree, 0.1 to 5 degree, or 0.1 to 3 degree.
Themiddle bearing member53 is protruding from an upper surface of themiddle supporting member52.
Themiddle bearing members53 are being arranged with having intervals along a length direction (Y) of themiddle supporting member52.
Themiddle bearing member53 may contact a target substrate G and thereby directly support the center portion of the target substrate G.
Themiddle bearing member53 can support the center portion of a target substrate G through themiddle supporting member52 and thereby prevent the center portion of a target substrate G from sag by the own weight.
Various characteristics found in embodiments illustrated inFIGS.1 to5 also can be applied to the present embodiment.
The loading cassettes (1 or2) may further comprise a protecting housing (not shown) for surrounding the edge supporting unit.
The protecting housing may have a shape of surrounding at least one between the upper plate and the lower plate, and the edge supporting unit.
The protecting housing may be an overall rectangular shape in which one surface is opened and may be covered on the loading cassette.
The protecting housing may further comprise a housing opening and shutting part (not shown) which allows a glass substrate to enter and can be opened and shut in a part or the whole within a surface surrounding the edge supporting unit.
The protecting housing may serve as preventing function from foreign material to be mixed when the loading cassette moves in a state of loading glass substrates and blocking the possibility of being damaged by flow of the fluid in a glass substrate.
Additionally, the protecting housing may serve as a preventing role being damaged of the inside of another loading cassette or the loaded glass substrate even though some glass substrate of any one loading cassette is damaged when many loading cassettes have been loaded to be moved or stacked.
As a material of the protecting housing, a material which is excellent in impact resistance, heat resistance, acid resistance, and so on and endures the weight of a glass substrate and a cassette, specifically a polycarbonate material which is clear or non-clear may be applied, and this case is advantageous in having a sufficient strength and excellent dimensional stability.
Loading Method of a Target Substrate
A method of loading a target substrate according to another embodiment comprises a carry-in step; a support step; and a completion step.
A method of loading a target substrate is performed through the above described a loading cassette (1 or2) and aloading carrier70 below.
The carry-in step is a step that a target substrate G is moved by applying aloading carrier70 having two ormore hands72.
The target substrate G may be a glass substrate having many through holes or a substrate for semiconductor packaging in which an electrically conductive pattern and an insulating layer are laminated to the glass substrate.
The target substrate G generally has a thin thickness (in general, 1500 μm or less) and thereby can be easily bended or curved. Also, because a glass substrate in which a through hole (core via) is formed in the predetermined size and position is applied as a target substrate, stress is concentrated in some section, imbalanced stress may occur in the glass substrate overall, and this may induce degradation of mechanical strength of the substrate. Accordingly, it is required to transfer and store a target substrate stably with minimizing sag or bending of the target substrate. And this is more important when applying a substrate with a larger area.
The target substrate G may be a polygonal glass substrate having L as the length (mm) and W as the width (mm). The L and W may be respectively 400 mm or more, and the target substrate may, for example, comprise a glass substrate in a quadrangle shape.
In the carry-in step, a target substrate G is moved with controlling to occur variation predetermined or less. In detail, the variation is calculated by below Equation (1) (refer toFIG.1).
Variation (D)=Inside Height of Target Substrate (Hin,mm)−Outside Height of Target Substrate (Hout,mm)  Equation (1):
The inside height and the outside height of the target substrate is applied by measuring height at the same reference line (B).
The variation (D) may be within −15 to +10 mm, −10 to 7 mm, or −10 to 4 mm A variation in this range may be adjusted by changing the number of hands to be applied, and the position and the interval of the hand fork.
Thehands72 respectively have one ormore hand forks72aand may have Wa2 (mm) as the shortest interval betweenhand forks72aplaced in thehands72 which respectively satisfies below Condition (1) or Condition (2). GT refers to the thickness (mm) of the target substrate.
When 0.1<GT≤0.5,(W/3.4)≤Wa2≤(W/1.8)  Condition (1):
When 0.5<GT≤1.5,(W/2.3)≤Wa2≤(W/1.6)  Condition (2):
Also, the Wa2 (mm) may respectively satisfy below Condition (1-1) or Condition (2-1).
When 0.1<GT≤0.5,(W/2.5)≤Wa2≤(W/1.9)  Condition (1-1):
When 0.5<GT≤1.5,(W/2.2)≤Wa2≤(W/1.8).  Condition (2-1):
When the thickness (mm) of the target substrate is expressed as GT, Wa1 value which is an interval betweenhand forks72aplaced on thesame hand72 may satisfy below Condition (3) or Condition (4).
When 0.1<GT≤0.5,(L/3.4)≤Wa1≤(L/1.8)  Condition (3):
When 0.5<GT≤1.5,(W/2.3)≤Wa1≤(W/1.6).  Condition (4):
Also, the Wa1 value may satisfy below Condition (3-1) or Condition (4-1).
When 0.1<GT≤0.5,(L/2.5)≤Wa1≤(L/1.9)  Condition (3-1):
When 0.5<GT≤1.5,(L/2.2)≤Wa1≤(L/1.8)  Condition (4-1):
When these interval conditions of thehand forks72aare satisfied, it is possible to move a target substrate more stably.
The target substrate G is carried in aloading space30 of a loading cassette (1 or2) with maintaining the variation (D) within a range described above, and the left and right edges of the target substrate is placed on theedge supporting unit40 of the loading cassettes, thereby allowing the entire target substrate to enter and be placed inside theloading space30. This entrance may be controlled by a loading carrier and hands moving along a predetermined moving route.
For example, the result of a fork test performed with a glass substrate in which has through vias will be disclosed. The glass substrate had a size of 508×508 (length×width, mm) and a thickness of 0.3 to 0.7 mm was formed.
It was confirmed that, when a fork interval is 220 mm based on a glass substrate with through vias, a variation (inside height-outside height) is 4.7 mm; when a fork interval is 260 mm based on a glass substrate with through vias, a variation is −0.6 mm; when a fork interval is 270 mm, a variation is −1 mm; when a fork interval is 320 mm, a variation is −11 mm; and when a fork interval is 420 mm, a variation is −27.5 mm.
On the other hand, the result of a test based on a glass substrate in which a through via is not formed was; when a fork interval is 220 mm, a variation (inside height-outside height) is 4.9 mm; when a fork interval is 270 mm, a variation is −0.4 mm; when a fork interval is 320 mm, a variation is −5.1 mm; and when a fork interval is 420 mm, a variation is −17.1 mm.
Considering the above, it is confirmed that a glass substrate in which has through via occurs a larger sag and a variation of the sag is rapidly increased according to applying a larger fork interval, compared to a glass substrate in which a through via is not formed. Additionally, it is thought that a main occurring reason of the increased variation is originated in variation of inside height, and this is thought to originate in changing of various causes such as weight of a glass substrate, area moment of inertia, and so on. However, the above results are the results of tests targeting a glass substrate which has core vias. An electrically conductive layer such as a metal pattern or an insulating layer may be formed to the glass substrate asymmetrically depending on a design, and in this case a result slightly different to the above.
The support step is a step of controlling a maximum sag of a target substrate G within 3 mm by supporting the target substrate in at least one point or more of the middle thereof by amiddle supporting member52. A sag is determined by an interval from an edge supporting unit40 (basement, 0 mm) The maximum sag may be negative, but it is expressed by converting to be positive.
In the support step, a maximum sag of the target substrate may be controlled by adjusting D1. The D1 is a distance between one side of theedge supporting member42 and amiddle supporting member52
In detail, when a thickness of a target substrate is GT, D1 can satisfy below condition (5) or (6).
When 0.1<GT≤0.5,150≤D1≤275  Condition (5):
When 0.5<GT≤1.5,220≤D1≤330  Condition (6):
In further detail when the thickness (mm) of the target substrate is GT, D1 can satisfy below conditions (5-1) to (6-1).
When 0.2<GT≤0.5,200≤D1≤275  Condition (5-1):
When 0.5<GT≤1.2,230≤D1≤300  Condition (6-1):
When applying amiddle supporting member52, it is advantageous to control a maximum sag of a target substrate within 3 mm based on the edge supporting member (0 mm).
Themiddle supporting member52 may comprise amiddle supporting bar522. Themiddle supporting bar522 has one portion which amiddle bearing member53 may be placed at and the other portion which is placed close to therear frame51. And themiddle supporting bar522 have a gradient, which the one portion is placed to be higher than the other portion. Also, in the support step, the height of the middle bearing member may be changed within 3 mm based on a height compared to not supporting the target substrate (0 mm) It may bring it to conduct a stabler supporting role.
The completion step is for releasing the fixation of theloading carrier70 with the target substrate G and carrying out the loading carrier to external of the loading cassette (1 or2.)
Ahand72 of the loading carrier has ahand fork72aplaced in a portion directly contacting with the target substrate, and the hand fork may have a pressure adjusting mean (not shown) selectively. In detail the hand fork may be adjusted to inhale or exhale air by being connected to a pressure controlling device (not shown) separately prepared through the hand. For example, in a case for fixing the target substrate, the target substrate can be fixed on a hand by depressurizing with letting the hand fork contact with the target substrate and inhale air. In the completion case, a force of fixing the target substrate is removed from the hand fork by relieving depressurizing state and the hand fork is allowed to exhale air temporarily to separate the hand fork and the target substrate easily.
The loading cassette (1 or2) comprise multipleedge supporting units40. When the thickness of the target substrate is expressed as GT (unit: mm), a distance between the edge supporting units neighboring up and down to each other is Dh (unit: mm) Dh may satisfy below Equation (2).
25+(GT−0.8)*8≤Dh  Equation (2):
The Dh may be 40 mm or less, or 35 mm or less for efficiency of loading.
Loading Method of a Target Substrate
A method of loading a target substrate according to another embodiment comprises, an entering step for carrying in a target substrate comprising a glass substrate with or without a through hole to a loading space of a loading cassette;
a supporting step for moving the entire target substrate to be placed inside the loading space and have left and right edges of the target substrate being placed on the edge supporting unit of the loading cassette by fixing the target substrate to a loading carrier, wherein at least one point or more of the middle of the target substrate supports at least a part of own weight of the target substrate though being placed on the middle supporting member; and a completing step for releasing the fixation of the loading carrier and the target substrate.
In the supporting step and the completing step, the maximum sag of the target substrate based on the edge supporting unit (0 mm) is controlled within 3 mm.
In detail, the method of loading the target substrate loads the target substrate by comprising an entering step for carrying in a target substrate fixed on a depressurizing pad (not shown) to a loading space to be placed in anedge supporting unit40; and a supporting step for releasing pressure of the depressurizing pad and letting the left and right edges of the target substrate to be placed in theedge supporting unit40, wherein at least one point or more of the middle of the target substrate is supported by the middle supportingmember supporting member52.
The target substrate is the same as above description in that it is a substrate comprising a glass substrate with or without a through hole.
When the thickness (mm) of the target substrate is expressed as GT, D1 which is a distance (mm) between one side of the edge supporting member and the middle supporting member may satisfy below Condition (1) or Condition (2).
When 0.1<GT≤0.5,150≤D1≤275  Condition (1):
When 0.5<GT≤1.5,220≤D1≤330  Condition (2):
Themiddle supporting member52 can control the maximum sag of a target substrate based on the edge supporting unit (0 mm) within 3 mm.
The target substrate G may be supported by at least one surface contacting the gradientmiddle supporting member52 from at least one point.
In the supporting step, sag occurring when themiddle supporting member52 supports the target substrate can be controlled within 3 mm based on when themiddle supporting member52 does not support the target substrate (0 mm).
The middle supporting member may comprise a middle supporting bar. The middle supporting bar has one portion which a middle bearing member may be placed at and the other portion which is placed close to the rear frame. And themiddle supporting bar522 has a gradient, which the one portion is placed to be higher than the other portion. Also, in the support step, the height of the middle bearing member may be changed within 3 mm based on a height compared to not supporting the target substrate (0 mm.)
Hereinafter, while embodiments of the present disclosure will be described in more detail with reference to the accompanying examples, it should be noted that examples are not limited to the following.
Comparative Example—Loading of a Glass Substrate Formed Through Vias Using a Loading Cassette without a Middle Supporting Member
As a target substrate, a glass substrate G was prepared, whose length and breadth were 500 mm respectively, thickness was about 0.4 mm, and the glass substrate was formed through vias as diameter of 100 μm and their pits of 1 mm.
Next, as a loading cassette, comprising
    • an upper plate;
    • a lower plate facing to the upper plate with an interval;
    • a loading space between the upper plate and the lower plate and a target substrate being disposed in,
    • an edge supporting unit for connecting the upper plate and the lower plate and supporting left and right edges of the target substrate, and
    • a rear supporting unit for connecting the upper plate and the lower plate and supporting a rear edge of the target substrate,
    • was prepared.
And then, the prepared glass substrate was carried into the loading space through a loading carrier, and stayed for 24 hours.
In this case, both left and right edges of the glass substrate were supported by edge supporting members, not applying middle supporting members, and a sag at the center of the glass substrate as a target substrate was occurred 30 mm or more.
Example—Loading of a Glass Substrate Formed Through Vias Using a Loading Cassette
As a glass substrate G, the same one applied in the comparative example were prepared.
Next, as a loading cassette, comprising
    • anupper plate10;
    • alower plate20 facing to the upper plate with an interval;
    • aloading space30 between the upper plate and the lower plate and a target substrate being disposed in,
    • anedge supporting unit40 for connecting the upper plate and the lower plate and supporting left and right edges of the target substrate, and
    • arear supporting unit50 for connecting the upper plate and the lower plate and supporting a rear edge of the target substrate,
    • wherein therear supporting unit50 comprises arear frame51 being connecting theupper plate10 and thelower plate20 in a rear surface and amiddle supporting member52 being protruding to the front direction from the rear frame, was prepared.
And then, the prepared glass substrate was carried into the loading space through aloading carrier70, and stayed for 24 hours.
In this case, at both a space between left right edge of the glass substrate and the middle supporting member; and a space between the middle supporting member and right edge of the glass substrate were occurred sages of the glass substrate, the degree occurred sages were confirmed as about 0.9 mm and about 1 mm, respectively. Therefore, it was confirmed that the seg of the glass substrate is controlled well.
Although the preferable exemplary embodiments have been described in detail, the scope of the embodiment is not limited thereto, and modifications and alterations made by those skilled in the art using the basic concept of the embodiment defined in the following claims fall within the scope of the embodiment.
DESCRIPTION OF FIGURE NUMBERS
1, 2: loading cassette10: upper plate
20: lower plate30: loading space
40: edge supporting unit41: side frame
411: side inserting slot42: edge supporting member
421: side slot43: edge bearing member
50: rear supporting unit51: rear frame
511: rear main bar511a: holding slot
512: stopper combining bar513: rear inserting slot
52: middle supporting member521: connecting block
522: middle supporting bar523: first area portion
524: second area portion53: middle bearing member
54: rear stopper541: rear slot
60: front stopper61: bar member
62: spacer63: rod member
64: stopper member70: loading carrier

Claims (10)

What is claimed is:
1. A loading cassette, comprising
an upper plate,
a lower plate facing to the upper plate with an interval,
a loading space between the upper plate and the lower plate and a target substrate being disposed in,
an edge supporting unit for connecting the upper plate and the lower plate and supporting left and right edges of the target substrate, and
a rear supporting unit for connecting the upper plate and the lower plate and supporting a rear edge of the target substrate,
wherein the rear supporting unit comprises
a rear frame being connecting the upper plate and the lower plate in a rear surface and a middle supporting member being protruding to the front direction from the rear frame,
the target substrate is a substrate including a glass substrate which includes or does not include a through hole, and
the middle supporting member controls a maximum sag of the target substrate based on the edge supporting unit (as 0 mm) within 3 mm.
2. The loading cassette according toclaim 1,
wherein, when a thickness (mm) of the target substrate is GT, D1 is a distance (mm) between one side of the edge supporting member and the middle supporting unit and the D1 satisfies below Condition (1) or Condition (2);

When 0.1<GT≤0.5,150≤D1≤275  Condition (1):

When 0.5<GT≤1.5,220≤D1≤330.  Condition (2):
3. The loading cassette according toclaim 1,
wherein the middle supporting member comprises a middle supporting bar, the middle bearing member is disposed at one part of the middle supporting member, and the rear frame is near to other part of the middle supporting member, the middle bearing member is disposed to have gradient to be higher than the other part.
4. The loading cassette according toclaim 1,
wherein the edge supporting unit comprises
a side frame being connecting the upper plate and the lower plate in both left and right sides respectively, and
an edge supporting member forming a side slot disposed in the rear frame to support the left and right edges of the target substrate and not allowing the target substrate to contact the side frame,
wherein the side slot is formed in plurality along an up-and-down direction of the side frame with having intervals.
5. The loading cassette according toclaim 1,
wherein the middle supporting member comprises
a connecting block combined with the rear frame, and
a middle supporting bar being protruding to the front from the connecting block, wherein the left-and-right width of the middle supporting bar is narrower as being distant from the connecting block,
wherein the middle bearing member is disposed in the middle supporting bar in a number of one, two, or more.
6. The loading cassette according toclaim 1,
wherein a length of the middle supporting bar may be ⅓ to ⅔ of the back-and-forth length of the loading space.
7. The loading cassette according toclaim 1,
wherein the rear supporting unit comprises
a rear frame being connecting the upper plate and the lower plate at the rear surface and having rear inserting slots formed in a left-and-right direction,
a middle supporting member being protruding to the front direction from the rear frame and being combined with the rear inserting slots and having a first area portion and a second area portion, and
a middle bearing member being protruding from the upper surface of the middle supporting member and directly connecting the target substrate to control sag of the target substrate,
wherein the first area portion is connected to the rear frame and the area of the second area portion may be narrower than the area of the first area portion.
8. A method of loading a target substrate, comprising
an entering step for carrying in a target substrate to a loading space of a loading cassette;
a supporting step for moving the entire target substrate by fixing at a loading carrier to the loading space with left and right edges of the target substrate placed on an edge supporting unit of the loading cassette according toclaim 1 and controlling a maximum sag of the target substrate to be within 3 mm based on the edge supporting unit (as 0 mm) by supporting the target substrate with a middle supporting member in at least one point or more of the middle; and
a completing step for releasing the fixation of the loading carrier and the target substrate,
wherein the target substrate comprises a glass substrate with or without a through hole, and
when the thickness (mm) of the target substrate is expressed as GT, D1 which is a distance (mm) between one side of the edge supporting member and the middle supporting member satisfies below Condition (1) or Condition (2);

When 0.1<GT≤0.5,150≤D1≤275  Condition (1):

When 0.5<GT≤1.5,220≤D1≤330.  Condition (2):
9. A method of loading a target substrate, comprising
a carry-in step for allowing the entire target substrate to enter and be disposed inside a loading space, in which the target substrate is polygonal having L as the length (mm) and W as the width (mm) is carried in the loading space of a cassette, by applying a loading carrier having two or more hands with maintaining variation (D) indicated by below Formula (1) within −15 to +10 mm;
a support step for controlling a maximum sag of the target substrate to be within 3 mm based on the edge supporting unit (as 0 mm) by supporting the target substrate with a middle supporting member in at least one point or more of the middle; and
a completion step of releasing the fixation of the loading carrier and the target substrate and then taking out the loading carrier to the external of the loading cassette,
wherein the target substrate is a glass substrate having many through holes or a substrate for semiconductor packaging in which an electrical conductive pattern and an insulating layer are laminated to the glass substrate, and
when a thickness (mm) of the target substrate is GT, the hands have one or more hand forks respectively and Wa2 (mm) is the shortest interval between hand forks placed on different hands; and below Condition (1) or Condition (2) is satisfied;

Variation (D)=Inside Height of Target Substrate (Hin,mm)−Outside Height of Target Substrate (Hout,mm)  Equation (1):

When 0.1<GT≤0.5,(W/3.4)≤Wa2≤(W/1.8)  Condition (1):

When 0.5<GT≤1.5,(W/2.3)≤Wa2≤(W/1.6).  Condition (2):
10. A method of loading a target substrate according toclaim 9,
wherein, when the thickness (mm) of the target substrate is GT, Dh (mm) which is an interval between the edge supporting units neighboring to each other in up and down satisfies below Formula (2);

25+(GT−0.8)*8≤Dh.  Equation (2):
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Citations (170)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4835598A (en)1985-06-131989-05-30Matsushita Electric Works, Ltd.Wiring board
US5304743A (en)1992-05-121994-04-19Lsi Logic CorporationMultilayer IC semiconductor package
KR970050005A (en)1995-12-131997-07-29김광호 Liquid Crystal Display Glass Loading Cassettes and Jigs
EP0526456B1 (en)1990-04-271997-08-27International Business Machines CorporationA multi-layer package incorporating a recessed cavity for a semiconductor chip
KR0184043B1 (en)1995-08-011999-05-01구자홍 Multi-Interface System for VAudio
JP2000142876A (en)1999-01-012000-05-23Sharp Corp Substrate storage cassette
JP2001007531A (en)1999-06-182001-01-12Ngk Spark Plug Co LtdManufacture of wiring board
JP3173250B2 (en)1993-10-252001-06-04ソニー株式会社 Method for manufacturing resin-encapsulated semiconductor device
CN1317163A (en)1998-09-102001-10-10通道系统集团公司Non-circular micro-via
KR20010107033A (en)2000-05-242001-12-07구본준, 론 위라하디락사Cassette for Loading Glass
KR20020008574A (en)2000-07-242002-01-31김영민Multi-fork type end effector and the method to carry the glass substrate
KR200266536Y1 (en)2001-07-122002-02-28(주)상아프론테크Side frame for lcd glass cassette
US20020093120A1 (en)2000-12-282002-07-18Stmicroelectronics S.R.I.Manufacturing method of an electronic device package
US20020180015A1 (en)2001-05-312002-12-05Yoshihide YamaguchiSemiconductor module
US20030179341A1 (en)*2002-03-252003-09-25Choo Hun JunCassette for liquid crystal panel inspection and method of inspecting liquid crystal panel
WO2004053983A1 (en)2002-12-052004-06-24Intel CorporationMetal core substrate packaging
KR100447323B1 (en)2002-03-222004-09-07주식회사 하이닉스반도체Method of physical vapor deposition in a semiconductor device
JP2004311919A (en)2003-02-212004-11-04Shinko Electric Ind Co LtdThrough-hole filling method
CN1614464A (en)2003-11-082005-05-11纳伊系统株式会社Receiving box for glass substrate of liquid crystal panel
JP2005235497A (en)2004-02-182005-09-02Seiko Epson Corp Organic electroluminescence device and electronic device
KR100538733B1 (en)2003-01-022005-12-26이 아이 듀폰 디 네모아 앤드 캄파니Process for the constrained sintering of asymmetrically configured dielectric layers
WO2006050205A2 (en)2004-11-012006-05-11H.C. Starck Inc.Refractory metal substrate with improved thermal conductivity
US20060179341A1 (en)2005-02-042006-08-10York International CorporationMethod of clearing an HVAC control fault code memory
US20060182556A1 (en)*2005-01-102006-08-17Au Optronics CorporationSubstrate transportation device (wire)
US20060202322A1 (en)2003-09-242006-09-14Ibiden Co., Ltd.Interposer, and multilayer printed wiring board
US20060226094A1 (en)*2005-04-082006-10-12Jae-Nam ChoGlass cassette for loading glass substrates of display panels
KR100687557B1 (en)2005-12-072007-02-27삼성전기주식회사 Substrate with improved warping and substrate formation method
JP2007080720A (en)2005-09-152007-03-29Asahi Kasei Corp Conductive metal paste
KR100720090B1 (en)2000-08-292007-05-18삼성전자주식회사 Glass Stacking Cassette for Liquid Crystal Display
JP2007227967A (en)2007-04-272007-09-06Hitachi Ltd Semiconductor module and manufacturing method thereof
CN101039549A (en)2006-03-172007-09-19日本特殊陶业株式会社Manufacturing method of wiring substrate and mask used for printing
JP2007281251A (en)2006-04-072007-10-25E I Du Pont De Nemours & CoSupport bar and substrate cassette
JP2007281252A (en)2006-04-072007-10-25E I Du Pont De Nemours & CoSubstrate cassette
JP3998984B2 (en)2002-01-182007-10-31富士通株式会社 Circuit board and manufacturing method thereof
JP2007291396A (en)1999-08-252007-11-08Hitachi Chem Co LtdWiring-connecting material and process for producing circuit board with the same
JP4012375B2 (en)2001-05-312007-11-21株式会社ルネサステクノロジ Wiring board and manufacturing method thereof
KR100794961B1 (en)2006-07-042008-01-16주식회사제4기한국 PSA method for manufacturing printed circuit boards
US20080017407A1 (en)2006-07-242008-01-24Ibiden Co., Ltd.Interposer and electronic device using the same
KR20080047127A (en)2006-11-242008-05-28엘지디스플레이 주식회사 Substrate storage cassette and substrate transport apparatus including the same
CN101189921A (en)2005-06-012008-05-28松下电器产业株式会社 Circuit board, manufacturing method thereof, and electronic component using the same
WO2008105496A1 (en)2007-03-012008-09-04Nec CorporationInterposer with capacitor mounted thereon and method for manufacturing the interposer
US20080217761A1 (en)2007-03-082008-09-11Advanced Chip Engineering Technology Inc.Structure of semiconductor device package and method of the same
KR100859206B1 (en)2007-03-152008-09-18주식회사제4기한국 Manufacturing method of LHH using plasma
EP1988758A1 (en)2006-02-222008-11-05Ibiden Co., Ltd.Printed wiring board and process for producing the same
WO2009005492A1 (en)2007-06-292009-01-08United States Postal ServiceSystems and methods for validating an address
JP2009295862A (en)2008-06-062009-12-17Mitsubishi Electric CorpHigh-frequency resin package
JP2010080679A (en)2008-09-262010-04-08Kyocera CorpMethod of manufacturing semiconductor device
KR20100044450A (en)2008-10-222010-04-30주식회사 디이엔티 Positioning device of cassette for exposure equipment
KR20100097383A (en)2009-02-262010-09-03삼성전기주식회사Package substrate and method for manufacturing the same
CN102097330A (en)2009-12-112011-06-15日月光半导体(上海)股份有限公司Conduction structure of encapsulation substrate and manufacturing method thereof
CN102106198A (en)2008-07-232011-06-22日本电气株式会社Semiconductor device and method for manufacturing same
CN102122691A (en)2011-01-182011-07-13王楚雯LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure
KR20110112974A (en)2010-04-082011-10-14삼성전기주식회사 Package substrate and its manufacturing method
JP2011228495A (en)2010-04-202011-11-10Asahi Glass Co LtdMethod of manufacturing glass substrate for forming semiconductor device penetration electrode and glass substrate for forming semiconductor device penetration electrode
CN102246299A (en)2008-10-152011-11-16Aac微技术有限公司Method for making via interconnection
KR20120023120A (en)2009-06-222012-03-12미쓰비시덴키 가부시키가이샤Semiconductor package and semiconductor package mounting structure
US20120106117A1 (en)2010-11-022012-05-03Georgia Tech Research CorporationUltra-thin interposer assemblies with through vias
KR20120051992A (en)2010-11-152012-05-23삼성전기주식회사Radiant heat substrate and method for manufacturing the radiant heat substrate, and package structure with the radiant heat substrate
US20120153463A1 (en)2010-12-162012-06-21Ngk Spark Plug Co., Ltd.Multilayer wiring substrate and method of manufacturing the same
KR101160120B1 (en)2011-04-012012-06-26한밭대학교 산학협력단Method for wiring metallization of glass substrate and glass substrate manufactured thereof
US20120186866A1 (en)2011-01-202012-07-26Ibiden Co., Ltd.Wiring board and method for manufacturing the same
CN102844857A (en)2010-04-202012-12-26旭硝子株式会社Glass substrate for semiconductor device via
US20130050227A1 (en)2011-08-302013-02-28Qualcomm Mems Technologies, Inc.Glass as a substrate material and a final package for mems and ic devices
KR20130027159A (en)2011-09-072013-03-15효창산업 주식회사Support bar of cassette for lcd glass and the assembling jig
US20130069251A1 (en)2011-09-152013-03-21Shinko Electric Industries Co., Ltd.Wiring substrate, method of manufacturing the same, and semiconductor device
KR20130038825A (en)2010-03-032013-04-18조지아 테크 리서치 코포레이션Through-package-via(tpv) structures on inorganic interposer and methods for fabricating same
CN103188866A (en)2011-12-292013-07-03揖斐电株式会社Printed wiring board and method for manufacturing printed wiring board
CN103208480A (en)2012-05-292013-07-17珠海越亚封装基板技术股份有限公司Multilayer electronic structure with through-holes having different sizes
JP2013537723A (en)2010-08-262013-10-03コーニング インコーポレイテッド Glass interposer panel and method of manufacturing the same
US20130293482A1 (en)2012-05-042013-11-07Qualcomm Mems Technologies, Inc.Transparent through-glass via
JP2014045026A (en)2012-08-242014-03-13Sony CorpWiring board and wiring board manufacturing method
US20140085847A1 (en)2012-09-272014-03-27Shinko Electric Industries Co., Ltd.Wiring substrate
KR20140044746A (en)2012-10-052014-04-15신꼬오덴기 고교 가부시키가이샤Wiring substrate and method for manufacturing wiring substrate
US20140116763A1 (en)2012-10-252014-05-01Ibiden Co., Ltd.Wiring board with built-in electronic component and method for manufacturing the same
US20140116767A1 (en)2012-10-252014-05-01Ibiden Co., Ltd.Wiring board with built-in electronic component and method for manufacturing the same
JP2014127701A (en)2012-12-272014-07-07Ibiden Co LtdWiring board and method of manufacturing the same
US8774580B2 (en)2009-12-022014-07-08Alcatel LucentTurning mirror for photonic integrated circuits
JP2014139963A (en)2013-01-212014-07-31Ngk Spark Plug Co LtdGlass substrate manufacturing method
US20140326686A1 (en)*2013-05-062014-11-06Shenzhen China Star Optoelectronics Technology Co., Ltd.Substrate cartridge
KR101466582B1 (en)2009-12-172014-11-28인텔 코포레이션Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
KR101468680B1 (en)2013-05-092014-12-04(주)옵토레인Method for manufacturing through via of interposer and semiconductor package comprising interposer
JP2014236029A (en)2013-05-312014-12-15イビデン株式会社Printed wiring board and method of manufacturing printed wiring board
KR101486366B1 (en)2011-12-162015-01-26에이블프린트 테크놀로지 코포레이션 리미티드Method for securing carrier by gas pressurization to inhibit warpage of the carrier
JP2015018675A (en)2013-07-102015-01-29富士フイルム株式会社 Method for manufacturing conductive film and conductive film
US20150027757A1 (en)2013-07-292015-01-29Samsung Electro-Mechanics Co., Ltd.Pcb having glass core
JP2015070189A (en)2013-09-302015-04-13凸版印刷株式会社Interposer and manufacturing method therefor, and semiconductor device including interposer and manufacturing method therefor
JP2015080800A (en)2013-10-232015-04-27旭硝子株式会社 Method for forming a through hole in a glass substrate using laser light
JP2015095590A (en)2013-11-132015-05-18大日本印刷株式会社 Penetration electrode substrate manufacturing method, penetration electrode substrate, and semiconductor device
JP2015103586A (en)2013-11-212015-06-04大日本印刷株式会社Through electrode substrate and semiconductor device using through electrode substrate
KR101531097B1 (en)2013-08-222015-06-23삼성전기주식회사Interposer substrate and method of manufacturing the same
US20150235989A1 (en)2014-02-142015-08-20Taiwan Semiconductor Manufacturing Company, Ltd.Substrate design for semiconductor packages and method of forming same
US20150235936A1 (en)2014-02-142015-08-20Taiwan Semiconductor Manufacturing Company, Ltd.Substrate design for semiconductor packages and method of forming same
US20150235915A1 (en)2014-02-142015-08-20Taiwan Semiconductor Manufacturing Company, Ltd.Substrate Design for Semiconductor Packages and Method of Forming Same
US20150245486A1 (en)2014-02-212015-08-27Lg Innotek Co., Ltd.Printed circuit board and method of fabricating the same
KR20150145697A (en)2014-06-192015-12-30가부시키가이샤 제이디바이스Semiconductor package and method of manufacturing the same
WO2015198912A1 (en)2014-06-262015-12-30ソニー株式会社Semiconductor device and method for manufacturing semiconductor device
JP2016018831A (en)2014-07-072016-02-01イビデン株式会社 Printed wiring board
US9263370B2 (en)2013-09-272016-02-16Qualcomm Mems Technologies, Inc.Semiconductor device with via bar
JP2016034030A (en)2015-09-292016-03-10大日本印刷株式会社 Penetration electrode substrate and method of manufacturing the penetration electrode substrate
WO2016052221A1 (en)2014-09-302016-04-07株式会社村田製作所Semiconductor package and mounting structure thereof
US20160111380A1 (en)2014-10-212016-04-21Georgia Tech Research CorporationNew structure of microelectronic packages with edge protection by coating
KR20160048868A (en)2013-08-292016-05-04코닝 인코포레이티드Methods for forming vias in glass substrates
JP2016111221A (en)2014-12-082016-06-20日本特殊陶業株式会社Method of manufacturing wiring board and wiring board
JP2016136615A (en)2015-01-232016-07-28サムソン エレクトロ−メカニックス カンパニーリミテッド.Printed circuit board with embedded electronic component and manufacturing method of the same
KR20160094502A (en)2015-01-302016-08-10주식회사 심텍Chip embedded type printed circuit board and method of manufacturing the same and stack package using the same
US9420708B2 (en)2011-03-292016-08-16Ibiden Co., Ltd.Method for manufacturing multilayer printed wiring board
US20160286660A1 (en)2015-03-252016-09-29International Business Machines CorporationGlass interposer with thermal vias
KR20160114710A (en)2014-01-312016-10-05코닝 인코포레이티드Methods and apparatus for providing an interposer for interconnecting semiconductor chips
CN106029286A (en)2013-12-172016-10-12康宁股份有限公司 Method for rapid laser drilling in glass and products made therefrom
US20160300740A1 (en)*2015-04-072016-10-13Boe Technology Group Co., Ltd.Cassette and Substrate Transfer Device
KR20160124323A (en)2015-04-162016-10-27삼성전기주식회사Semiconductor device package and manufacturing method thereof
US20160351545A1 (en)2015-06-012016-12-01Samsung Electro-Mechanics Co., Ltd.Printed circuit board, method, and semiconductor package
JP2016213466A (en)2015-05-112016-12-15サムソン エレクトロ−メカニックス カンパニーリミテッド. Fan-out semiconductor package and manufacturing method thereof
JP2016213253A (en)2015-04-302016-12-15大日本印刷株式会社Through electrode substrate and interposer using through electrode substrate and semiconductor device
JP2017005174A (en)2015-06-122017-01-05凸版印刷株式会社Wiring circuit board, semiconductor device, method for manufacturing wiring circuit board, and method for manufacturing semiconductor device
US20170040265A1 (en)2015-05-112017-02-09Samsung Electro-Mechanics Co., Ltd.Fan-out semiconductor package and method of manufacturing the same
CN106449574A (en)2016-12-052017-02-22中国科学院微电子研究所Coaxial differential pair silicon through hole structure
JP2017041645A (en)2014-08-292017-02-23三井金属鉱業株式会社Conductor connection structure, method of producing the same, conductive composition, and electronic component module
US20170064835A1 (en)2015-08-312017-03-02Ibiden Co., Ltd.Printed wiring board and method for manufacturing printed wiring board
JP6110437B2 (en)2015-05-012017-04-05▲き▼邦科技股▲分▼有限公司 Semiconductor packaging method
WO2017057645A1 (en)2015-10-022017-04-06三井金属鉱業株式会社Bonding junction structure
US20170144844A1 (en)*2015-06-202017-05-25Boe Technology Croup Co., Ltd.System For Loading And Unloading Cassette and Method For Loading And Unloading Cassette
JP2017112209A (en)2015-12-162017-06-22新光電気工業株式会社Wiring board, semiconductor device and wiring board manufacturing method
US20170186710A1 (en)2014-05-272017-06-29University Of Florida Research Foundation, Inc.Glass interposer integrated high quality electronic components and systems
JP2017121648A (en)2016-01-072017-07-13日立化成株式会社Assembly manufacturing method, pressure junction container and pressure junction apparatus
KR20170084562A (en)2016-01-122017-07-20삼성전기주식회사Package substrate
KR101760846B1 (en)2010-07-302017-07-24어플라이드 머티어리얼스, 인코포레이티드Methods for depositing metal in high aspect ratio features
US20170223825A1 (en)2016-02-022017-08-03Georgia Tech Research CorporationMixed-Signal Substrate with Integrated Through-Substrate Vias
CN107112297A (en)2014-11-142017-08-29凸版印刷株式会社Wired circuit board, semiconductor device, the manufacture method of wired circuit board, the manufacture method of semiconductor device
WO2017188281A1 (en)2016-04-282017-11-02旭硝子株式会社Glass laminate and manufacturing method therefor
KR20170126394A (en)2016-05-092017-11-17에이블고 테크놀로지 씨오.,엘티디.Method for suppressing material warpage by means of pressure difference
JP2017216398A (en)2016-06-012017-12-07凸版印刷株式会社Glass circuit board
US20170363850A1 (en)*2014-05-292017-12-21Rarecyte, Inc.Automated substrate loading
US20170363580A1 (en)2015-02-192017-12-21Saudi Arabian Oil CompanySlug flow monitoring and gas measurement
KR101825276B1 (en)2013-03-152018-02-02쇼오트 글라스 테크놀로지스 (쑤저우) 코퍼레이션 리미티드.Chemically toughened flexible ultrathin glass
JP6273873B2 (en)2014-02-042018-02-07大日本印刷株式会社 Manufacturing method of glass interposer substrate
CN107758041A (en)2016-08-182018-03-06象牙弗隆泰克株式会社Box and its including the support bar for supporting substrate carrying case insert structure body
US20180068868A1 (en)2016-09-082018-03-08Corning IncorporatedArticles having holes with morphology attributes and methods for fabricating the same
CN107848878A (en)2015-07-242018-03-27旭硝子株式会社 Glass substrate, laminated substrate, manufacturing method of laminated substrate, laminate, package, and manufacturing method of glass substrate
KR20180040498A (en)2016-10-122018-04-20쇼오트 글라스 테크놀로지스 (쑤저우) 코퍼레이션 리미티드.An electronic device structure and an ultra-thin glass sheet used therein
US20180139844A1 (en)2016-11-162018-05-17Siliconware Precision Industries Co., Ltd.Electronic device, method for fabricating an electronic device, and substrate structure
WO2018101468A1 (en)2016-12-022018-06-07凸版印刷株式会社Electronic component and method for manufacturing electronic component
KR20180067568A (en)2015-10-092018-06-20코닝 인코포레이티드 Glass-based substrates with vias and processes for forming them
JP2018107256A (en)2016-12-262018-07-05凸版印刷株式会社Glass wiring board, semiconductor package substrate, semiconductor device, and method for manufacturing semiconductor device
JP2018107423A (en)2016-12-272018-07-05大日本印刷株式会社Perforated substrate, mounting substrate including perforated substrate, and manufacturing method of perforated substrate
JP2018116951A (en)2017-01-162018-07-26富士通株式会社 Circuit board, circuit board manufacturing method, and electronic apparatus
JP2018120902A (en)2017-01-242018-08-02ゼネラル・エレクトリック・カンパニイPower electronics package and method of manufacturing the same
KR20180088599A (en)2017-01-272018-08-06쇼오트 아게Structured plate-like glass element and process for the production thereof
US20180240778A1 (en)2017-02-222018-08-23Intel CorporationEmbedded multi-die interconnect bridge with improved power delivery
KR101903485B1 (en)2018-03-272018-10-02(주)상아프론테크Cassette for loading substrate
JP2018160697A (en)2018-07-062018-10-11大日本印刷株式会社Through electrode substrate
JP2018163901A (en)2017-03-242018-10-18イビデン株式会社Print circuit board
JP2018163986A (en)2017-03-242018-10-18大日本印刷株式会社 Through electrode substrate and manufacturing method thereof
KR20180116733A (en)2017-04-142018-10-25한국전자통신연구원Semiconductor package
JP2018174190A (en)2017-03-312018-11-08大日本印刷株式会社 Through electrode substrate and manufacturing method thereof
JP2018174189A (en)2017-03-312018-11-08大日本印刷株式会社 Through electrode substrate and manufacturing method thereof
CN108878343A (en)2018-06-292018-11-23信利半导体有限公司A kind of manufacturing method of flexible display apparatus
US20180342451A1 (en)2017-05-252018-11-29Corning IncorporatedSilica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US20180342450A1 (en)2017-05-252018-11-29Corning IncorporatedArticles having vias with geometry attributes and methods for fabricating the same
JP2018199605A (en)2017-05-292018-12-20Agc株式会社 Glass substrate manufacturing method and glass substrate
KR20190002622A (en)2016-04-292019-01-08쇼오트 글라스 테크놀로지스 (쑤저우) 코퍼레이션 리미티드. High Strength Ultra-thin Glass and Manufacturing Method Thereof
KR20190003050A (en)2017-06-302019-01-09한국과학기술원Method for Processing Metallization in Through Type Through Glass Via
KR20190008103A (en)2017-07-142019-01-23가부시기가이샤 디스코Method for manufacturing a glass interposer
JP2019016672A (en)2017-07-052019-01-31大日本印刷株式会社 Mounting board and manufacturing method of mounting board
KR101944718B1 (en)2018-07-052019-02-01(주)상아프론테크Insert structure and cassette for loading substrate with the same
CN109411432A (en)2017-08-182019-03-01财团法人工业技术研究院 Semiconductor packaging redistribution layer structure
KR20190026676A (en)2016-05-242019-03-13이매진 코퍼레이션 High-precision shadow mask deposition system and method therefor
TW201929100A (en)2017-12-192019-07-16南韓商三星電子股份有限公司Semiconductor package
US10483210B2 (en)2014-11-052019-11-19Corning IncorporatedGlass articles with non-planar features and alkali-free glass elements
US20230062692A1 (en)*2021-08-262023-03-02Samsung Display Co., Ltd.Cassette for accommodating glass, method for loading glass into cassette, and method for manufacturing cover window

Patent Citations (198)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4835598A (en)1985-06-131989-05-30Matsushita Electric Works, Ltd.Wiring board
EP0526456B1 (en)1990-04-271997-08-27International Business Machines CorporationA multi-layer package incorporating a recessed cavity for a semiconductor chip
US5304743A (en)1992-05-121994-04-19Lsi Logic CorporationMultilayer IC semiconductor package
US5414222A (en)1992-05-121995-05-09Lsi Logic CorporationMultilayer IC semiconductor package
JP3173250B2 (en)1993-10-252001-06-04ソニー株式会社 Method for manufacturing resin-encapsulated semiconductor device
KR0184043B1 (en)1995-08-011999-05-01구자홍 Multi-Interface System for VAudio
KR970050005A (en)1995-12-131997-07-29김광호 Liquid Crystal Display Glass Loading Cassettes and Jigs
CN1317163A (en)1998-09-102001-10-10通道系统集团公司Non-circular micro-via
JP2000142876A (en)1999-01-012000-05-23Sharp Corp Substrate storage cassette
JP2001007531A (en)1999-06-182001-01-12Ngk Spark Plug Co LtdManufacture of wiring board
JP2007291396A (en)1999-08-252007-11-08Hitachi Chem Co LtdWiring-connecting material and process for producing circuit board with the same
KR20010107033A (en)2000-05-242001-12-07구본준, 론 위라하디락사Cassette for Loading Glass
KR20020008574A (en)2000-07-242002-01-31김영민Multi-fork type end effector and the method to carry the glass substrate
KR100720090B1 (en)2000-08-292007-05-18삼성전자주식회사 Glass Stacking Cassette for Liquid Crystal Display
US20020093120A1 (en)2000-12-282002-07-18Stmicroelectronics S.R.I.Manufacturing method of an electronic device package
US20020180015A1 (en)2001-05-312002-12-05Yoshihide YamaguchiSemiconductor module
US6610934B2 (en)2001-05-312003-08-26Hitachi, Ltd.Semiconductor module and method of making the device
JP4012375B2 (en)2001-05-312007-11-21株式会社ルネサステクノロジ Wiring board and manufacturing method thereof
KR200266536Y1 (en)2001-07-122002-02-28(주)상아프론테크Side frame for lcd glass cassette
JP3998984B2 (en)2002-01-182007-10-31富士通株式会社 Circuit board and manufacturing method thereof
KR100870685B1 (en)2002-01-182008-11-26후지쯔 가부시끼가이샤 Circuit boards and manufacturing method thereof
KR100447323B1 (en)2002-03-222004-09-07주식회사 하이닉스반도체Method of physical vapor deposition in a semiconductor device
US20030179341A1 (en)*2002-03-252003-09-25Choo Hun JunCassette for liquid crystal panel inspection and method of inspecting liquid crystal panel
WO2004053983A1 (en)2002-12-052004-06-24Intel CorporationMetal core substrate packaging
KR100538733B1 (en)2003-01-022005-12-26이 아이 듀폰 디 네모아 앤드 캄파니Process for the constrained sintering of asymmetrically configured dielectric layers
JP2004311919A (en)2003-02-212004-11-04Shinko Electric Ind Co LtdThrough-hole filling method
US20060202322A1 (en)2003-09-242006-09-14Ibiden Co., Ltd.Interposer, and multilayer printed wiring board
KR20060111449A (en)2003-09-242006-10-27이비덴 가부시키가이샤 Interposer, Multilayer Printed Circuit Board
CN1614464A (en)2003-11-082005-05-11纳伊系统株式会社Receiving box for glass substrate of liquid crystal panel
JP2005235497A (en)2004-02-182005-09-02Seiko Epson Corp Organic electroluminescence device and electronic device
KR20070085553A (en)2004-11-012007-08-27에이치. 씨. 스타아크 아이앤씨 Refractory Metal Substrate with Improved Thermal Conductivity
WO2006050205A2 (en)2004-11-012006-05-11H.C. Starck Inc.Refractory metal substrate with improved thermal conductivity
US20060182556A1 (en)*2005-01-102006-08-17Au Optronics CorporationSubstrate transportation device (wire)
US20060179341A1 (en)2005-02-042006-08-10York International CorporationMethod of clearing an HVAC control fault code memory
US20060226094A1 (en)*2005-04-082006-10-12Jae-Nam ChoGlass cassette for loading glass substrates of display panels
CN101189921A (en)2005-06-012008-05-28松下电器产业株式会社 Circuit board, manufacturing method thereof, and electronic component using the same
US20090117336A1 (en)2005-06-012009-05-07Matsushita Electric Industrial Co., LtdCircuit board, method for manufacturing such circuit board, and electronic component using such circuit board
JP2007080720A (en)2005-09-152007-03-29Asahi Kasei Corp Conductive metal paste
KR100687557B1 (en)2005-12-072007-02-27삼성전기주식회사 Substrate with improved warping and substrate formation method
EP1988758A1 (en)2006-02-222008-11-05Ibiden Co., Ltd.Printed wiring board and process for producing the same
CN101039549A (en)2006-03-172007-09-19日本特殊陶业株式会社Manufacturing method of wiring substrate and mask used for printing
US20100224524A1 (en)*2006-04-072010-09-09Ichiro YuasaSubstrate cassette
JP2007281252A (en)2006-04-072007-10-25E I Du Pont De Nemours & CoSubstrate cassette
CN101415626A (en)2006-04-072009-04-22纳幕尔杜邦公司Support bar and substrate cassette
JP2007281251A (en)2006-04-072007-10-25E I Du Pont De Nemours & CoSupport bar and substrate cassette
KR100794961B1 (en)2006-07-042008-01-16주식회사제4기한국 PSA method for manufacturing printed circuit boards
CN101371355A (en)2006-07-242009-02-18揖斐电株式会社 Relay substrate and electronic device using the same
US20080017407A1 (en)2006-07-242008-01-24Ibiden Co., Ltd.Interposer and electronic device using the same
WO2008013054A1 (en)2006-07-242008-01-31Ibiden Co., Ltd.Interposer and electronic device using the same
KR20080047127A (en)2006-11-242008-05-28엘지디스플레이 주식회사 Substrate storage cassette and substrate transport apparatus including the same
WO2008105496A1 (en)2007-03-012008-09-04Nec CorporationInterposer with capacitor mounted thereon and method for manufacturing the interposer
US20080217761A1 (en)2007-03-082008-09-11Advanced Chip Engineering Technology Inc.Structure of semiconductor device package and method of the same
KR100859206B1 (en)2007-03-152008-09-18주식회사제4기한국 Manufacturing method of LHH using plasma
JP2007227967A (en)2007-04-272007-09-06Hitachi Ltd Semiconductor module and manufacturing method thereof
WO2009005492A1 (en)2007-06-292009-01-08United States Postal ServiceSystems and methods for validating an address
JP2009295862A (en)2008-06-062009-12-17Mitsubishi Electric CorpHigh-frequency resin package
CN102106198A (en)2008-07-232011-06-22日本电气株式会社Semiconductor device and method for manufacturing same
JP2010080679A (en)2008-09-262010-04-08Kyocera CorpMethod of manufacturing semiconductor device
CN102246299A (en)2008-10-152011-11-16Aac微技术有限公司Method for making via interconnection
KR20100044450A (en)2008-10-222010-04-30주식회사 디이엔티 Positioning device of cassette for exposure equipment
KR20100097383A (en)2009-02-262010-09-03삼성전기주식회사Package substrate and method for manufacturing the same
KR20120023120A (en)2009-06-222012-03-12미쓰비시덴키 가부시키가이샤Semiconductor package and semiconductor package mounting structure
US8774580B2 (en)2009-12-022014-07-08Alcatel LucentTurning mirror for photonic integrated circuits
CN102097330A (en)2009-12-112011-06-15日月光半导体(上海)股份有限公司Conduction structure of encapsulation substrate and manufacturing method thereof
KR101466582B1 (en)2009-12-172014-11-28인텔 코포레이션Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
KR101825149B1 (en)2010-03-032018-02-02조지아 테크 리서치 코포레이션Through-package-via(tpv) structures on inorganic interposer and methods for fabricating same
KR20130038825A (en)2010-03-032013-04-18조지아 테크 리서치 코포레이션Through-package-via(tpv) structures on inorganic interposer and methods for fabricating same
KR20110112974A (en)2010-04-082011-10-14삼성전기주식회사 Package substrate and its manufacturing method
CN102844857A (en)2010-04-202012-12-26旭硝子株式会社Glass substrate for semiconductor device via
JP2011228495A (en)2010-04-202011-11-10Asahi Glass Co LtdMethod of manufacturing glass substrate for forming semiconductor device penetration electrode and glass substrate for forming semiconductor device penetration electrode
KR101760846B1 (en)2010-07-302017-07-24어플라이드 머티어리얼스, 인코포레이티드Methods for depositing metal in high aspect ratio features
US20140034374A1 (en)2010-08-262014-02-06Corning IncorporatedGlass interposer panels and methods for making the same
JP2013537723A (en)2010-08-262013-10-03コーニング インコーポレイテッド Glass interposer panel and method of manufacturing the same
WO2012061304A1 (en)2010-11-022012-05-10Georgia Tech Research CorporationUltra-thin interposer assemblies with through vias
US20120106117A1 (en)2010-11-022012-05-03Georgia Tech Research CorporationUltra-thin interposer assemblies with through vias
US9167694B2 (en)2010-11-022015-10-20Georgia Tech Research CorporationUltra-thin interposer assemblies with through vias
KR20120051992A (en)2010-11-152012-05-23삼성전기주식회사Radiant heat substrate and method for manufacturing the radiant heat substrate, and package structure with the radiant heat substrate
US20120153463A1 (en)2010-12-162012-06-21Ngk Spark Plug Co., Ltd.Multilayer wiring substrate and method of manufacturing the same
CN102122691A (en)2011-01-182011-07-13王楚雯LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure
JP2013038374A (en)2011-01-202013-02-21Ibiden Co LtdWiring board and manufacturing method of the same
US20120186866A1 (en)2011-01-202012-07-26Ibiden Co., Ltd.Wiring board and method for manufacturing the same
US9420708B2 (en)2011-03-292016-08-16Ibiden Co., Ltd.Method for manufacturing multilayer printed wiring board
KR101160120B1 (en)2011-04-012012-06-26한밭대학교 산학협력단Method for wiring metallization of glass substrate and glass substrate manufactured thereof
US20130050227A1 (en)2011-08-302013-02-28Qualcomm Mems Technologies, Inc.Glass as a substrate material and a final package for mems and ic devices
KR20130027159A (en)2011-09-072013-03-15효창산업 주식회사Support bar of cassette for lcd glass and the assembling jig
US20130069251A1 (en)2011-09-152013-03-21Shinko Electric Industries Co., Ltd.Wiring substrate, method of manufacturing the same, and semiconductor device
KR101486366B1 (en)2011-12-162015-01-26에이블프린트 테크놀로지 코포레이션 리미티드Method for securing carrier by gas pressurization to inhibit warpage of the carrier
CN103188866A (en)2011-12-292013-07-03揖斐电株式会社Printed wiring board and method for manufacturing printed wiring board
US20130293482A1 (en)2012-05-042013-11-07Qualcomm Mems Technologies, Inc.Transparent through-glass via
CN103208480A (en)2012-05-292013-07-17珠海越亚封装基板技术股份有限公司Multilayer electronic structure with through-holes having different sizes
JP2014045026A (en)2012-08-242014-03-13Sony CorpWiring board and wiring board manufacturing method
JP2014072205A (en)2012-09-272014-04-21Shinko Electric Ind Co LtdWiring board
US20140085847A1 (en)2012-09-272014-03-27Shinko Electric Industries Co., Ltd.Wiring substrate
KR20140044746A (en)2012-10-052014-04-15신꼬오덴기 고교 가부시키가이샤Wiring substrate and method for manufacturing wiring substrate
US20140116763A1 (en)2012-10-252014-05-01Ibiden Co., Ltd.Wiring board with built-in electronic component and method for manufacturing the same
US20140116767A1 (en)2012-10-252014-05-01Ibiden Co., Ltd.Wiring board with built-in electronic component and method for manufacturing the same
JP2014127701A (en)2012-12-272014-07-07Ibiden Co LtdWiring board and method of manufacturing the same
JP2014139963A (en)2013-01-212014-07-31Ngk Spark Plug Co LtdGlass substrate manufacturing method
KR101825276B1 (en)2013-03-152018-02-02쇼오트 글라스 테크놀로지스 (쑤저우) 코퍼레이션 리미티드.Chemically toughened flexible ultrathin glass
US20140326686A1 (en)*2013-05-062014-11-06Shenzhen China Star Optoelectronics Technology Co., Ltd.Substrate cartridge
KR101468680B1 (en)2013-05-092014-12-04(주)옵토레인Method for manufacturing through via of interposer and semiconductor package comprising interposer
JP2014236029A (en)2013-05-312014-12-15イビデン株式会社Printed wiring board and method of manufacturing printed wiring board
JP2015018675A (en)2013-07-102015-01-29富士フイルム株式会社 Method for manufacturing conductive film and conductive film
US20150027757A1 (en)2013-07-292015-01-29Samsung Electro-Mechanics Co., Ltd.Pcb having glass core
KR20150014167A (en)2013-07-292015-02-06삼성전기주식회사Pcb having glass core
KR101531097B1 (en)2013-08-222015-06-23삼성전기주식회사Interposer substrate and method of manufacturing the same
KR20160048868A (en)2013-08-292016-05-04코닝 인코포레이티드Methods for forming vias in glass substrates
US9263370B2 (en)2013-09-272016-02-16Qualcomm Mems Technologies, Inc.Semiconductor device with via bar
JP2015070189A (en)2013-09-302015-04-13凸版印刷株式会社Interposer and manufacturing method therefor, and semiconductor device including interposer and manufacturing method therefor
JP2015080800A (en)2013-10-232015-04-27旭硝子株式会社 Method for forming a through hole in a glass substrate using laser light
JP2015095590A (en)2013-11-132015-05-18大日本印刷株式会社 Penetration electrode substrate manufacturing method, penetration electrode substrate, and semiconductor device
JP2015103586A (en)2013-11-212015-06-04大日本印刷株式会社Through electrode substrate and semiconductor device using through electrode substrate
EP3083125B1 (en)2013-12-172021-04-14Corning IncorporatedMethod for rapid laser drilling of holes in glass
CN106029286A (en)2013-12-172016-10-12康宁股份有限公司 Method for rapid laser drilling in glass and products made therefrom
JP2017510531A (en)2013-12-172017-04-13コーニング インコーポレイテッド High speed laser drilling method for glass and glass products
KR20160114710A (en)2014-01-312016-10-05코닝 인코포레이티드Methods and apparatus for providing an interposer for interconnecting semiconductor chips
JP6273873B2 (en)2014-02-042018-02-07大日本印刷株式会社 Manufacturing method of glass interposer substrate
US9768090B2 (en)2014-02-142017-09-19Taiwan Semiconductor Manufacturing Company, Ltd.Substrate design for semiconductor packages and method of forming same
US20150235936A1 (en)2014-02-142015-08-20Taiwan Semiconductor Manufacturing Company, Ltd.Substrate design for semiconductor packages and method of forming same
US20150235915A1 (en)2014-02-142015-08-20Taiwan Semiconductor Manufacturing Company, Ltd.Substrate Design for Semiconductor Packages and Method of Forming Same
US20150235989A1 (en)2014-02-142015-08-20Taiwan Semiconductor Manufacturing Company, Ltd.Substrate design for semiconductor packages and method of forming same
US20150245486A1 (en)2014-02-212015-08-27Lg Innotek Co., Ltd.Printed circuit board and method of fabricating the same
US20170186710A1 (en)2014-05-272017-06-29University Of Florida Research Foundation, Inc.Glass interposer integrated high quality electronic components and systems
US20170363850A1 (en)*2014-05-292017-12-21Rarecyte, Inc.Automated substrate loading
KR20150145697A (en)2014-06-192015-12-30가부시키가이샤 제이디바이스Semiconductor package and method of manufacturing the same
US20170154860A1 (en)2014-06-262017-06-01Sony CorporationSemiconductor device and method of manufacturing semiconductor device
WO2015198912A1 (en)2014-06-262015-12-30ソニー株式会社Semiconductor device and method for manufacturing semiconductor device
JP2016018831A (en)2014-07-072016-02-01イビデン株式会社 Printed wiring board
JP2017041645A (en)2014-08-292017-02-23三井金属鉱業株式会社Conductor connection structure, method of producing the same, conductive composition, and electronic component module
WO2016052221A1 (en)2014-09-302016-04-07株式会社村田製作所Semiconductor package and mounting structure thereof
US20160111380A1 (en)2014-10-212016-04-21Georgia Tech Research CorporationNew structure of microelectronic packages with edge protection by coating
US10483210B2 (en)2014-11-052019-11-19Corning IncorporatedGlass articles with non-planar features and alkali-free glass elements
CN107112297A (en)2014-11-142017-08-29凸版印刷株式会社Wired circuit board, semiconductor device, the manufacture method of wired circuit board, the manufacture method of semiconductor device
JP2016111221A (en)2014-12-082016-06-20日本特殊陶業株式会社Method of manufacturing wiring board and wiring board
JP2016136615A (en)2015-01-232016-07-28サムソン エレクトロ−メカニックス カンパニーリミテッド.Printed circuit board with embedded electronic component and manufacturing method of the same
KR20160094502A (en)2015-01-302016-08-10주식회사 심텍Chip embedded type printed circuit board and method of manufacturing the same and stack package using the same
US20170363580A1 (en)2015-02-192017-12-21Saudi Arabian Oil CompanySlug flow monitoring and gas measurement
US20160286660A1 (en)2015-03-252016-09-29International Business Machines CorporationGlass interposer with thermal vias
US20160300740A1 (en)*2015-04-072016-10-13Boe Technology Group Co., Ltd.Cassette and Substrate Transfer Device
KR20160124323A (en)2015-04-162016-10-27삼성전기주식회사Semiconductor device package and manufacturing method thereof
JP2016213253A (en)2015-04-302016-12-15大日本印刷株式会社Through electrode substrate and interposer using through electrode substrate and semiconductor device
JP6110437B2 (en)2015-05-012017-04-05▲き▼邦科技股▲分▼有限公司 Semiconductor packaging method
US20170040265A1 (en)2015-05-112017-02-09Samsung Electro-Mechanics Co., Ltd.Fan-out semiconductor package and method of manufacturing the same
US20180226351A1 (en)2015-05-112018-08-09Samsung Electro-Mechanics Co., Ltd.Fan-out semiconductor package and method of manufacturing the same
JP2016213466A (en)2015-05-112016-12-15サムソン エレクトロ−メカニックス カンパニーリミテッド. Fan-out semiconductor package and manufacturing method thereof
US20160351545A1 (en)2015-06-012016-12-01Samsung Electro-Mechanics Co., Ltd.Printed circuit board, method, and semiconductor package
KR20160141516A (en)2015-06-012016-12-09삼성전기주식회사Printed circuit board, method for manufacturing the same and semiconductor package having the thereof
JP2016225620A (en)2015-06-012016-12-28サムソン エレクトロ−メカニックス カンパニーリミテッド. Printed circuit board, printed circuit board manufacturing method, and semiconductor package including the same
CN107683524A (en)2015-06-122018-02-09凸版印刷株式会社 Wired circuit board, semiconductor device, method of manufacturing printed circuit board, and method of manufacturing semiconductor device
JP2017005174A (en)2015-06-122017-01-05凸版印刷株式会社Wiring circuit board, semiconductor device, method for manufacturing wiring circuit board, and method for manufacturing semiconductor device
US20170144844A1 (en)*2015-06-202017-05-25Boe Technology Croup Co., Ltd.System For Loading And Unloading Cassette and Method For Loading And Unloading Cassette
CN107848878A (en)2015-07-242018-03-27旭硝子株式会社 Glass substrate, laminated substrate, manufacturing method of laminated substrate, laminate, package, and manufacturing method of glass substrate
JP2017050315A (en)2015-08-312017-03-09イビデン株式会社Printed wiring board and method of manufacturing the same
US20170064835A1 (en)2015-08-312017-03-02Ibiden Co., Ltd.Printed wiring board and method for manufacturing printed wiring board
JP2016034030A (en)2015-09-292016-03-10大日本印刷株式会社 Penetration electrode substrate and method of manufacturing the penetration electrode substrate
WO2017057645A1 (en)2015-10-022017-04-06三井金属鉱業株式会社Bonding junction structure
KR20180067568A (en)2015-10-092018-06-20코닝 인코포레이티드 Glass-based substrates with vias and processes for forming them
JP2017112209A (en)2015-12-162017-06-22新光電気工業株式会社Wiring board, semiconductor device and wiring board manufacturing method
US20170179013A1 (en)2015-12-162017-06-22Shinko Electric Industries Co., Ltd.Wiring board, and semiconductor device
JP2017121648A (en)2016-01-072017-07-13日立化成株式会社Assembly manufacturing method, pressure junction container and pressure junction apparatus
KR20170084562A (en)2016-01-122017-07-20삼성전기주식회사Package substrate
US20170223825A1 (en)2016-02-022017-08-03Georgia Tech Research CorporationMixed-Signal Substrate with Integrated Through-Substrate Vias
WO2017188281A1 (en)2016-04-282017-11-02旭硝子株式会社Glass laminate and manufacturing method therefor
KR20190002622A (en)2016-04-292019-01-08쇼오트 글라스 테크놀로지스 (쑤저우) 코퍼레이션 리미티드. High Strength Ultra-thin Glass and Manufacturing Method Thereof
KR20170126394A (en)2016-05-092017-11-17에이블고 테크놀로지 씨오.,엘티디.Method for suppressing material warpage by means of pressure difference
KR20190026676A (en)2016-05-242019-03-13이매진 코퍼레이션 High-precision shadow mask deposition system and method therefor
JP2017216398A (en)2016-06-012017-12-07凸版印刷株式会社Glass circuit board
CN107758041A (en)2016-08-182018-03-06象牙弗隆泰克株式会社Box and its including the support bar for supporting substrate carrying case insert structure body
US20180068868A1 (en)2016-09-082018-03-08Corning IncorporatedArticles having holes with morphology attributes and methods for fabricating the same
KR20180040498A (en)2016-10-122018-04-20쇼오트 글라스 테크놀로지스 (쑤저우) 코퍼레이션 리미티드.An electronic device structure and an ultra-thin glass sheet used therein
US20180139844A1 (en)2016-11-162018-05-17Siliconware Precision Industries Co., Ltd.Electronic device, method for fabricating an electronic device, and substrate structure
WO2018101468A1 (en)2016-12-022018-06-07凸版印刷株式会社Electronic component and method for manufacturing electronic component
US20190269013A1 (en)2016-12-022019-08-29Toppan Printing Co., Ltd.Electronic component and method of producing electronic component
CN106449574A (en)2016-12-052017-02-22中国科学院微电子研究所Coaxial differential pair silicon through hole structure
JP2018107256A (en)2016-12-262018-07-05凸版印刷株式会社Glass wiring board, semiconductor package substrate, semiconductor device, and method for manufacturing semiconductor device
JP2018107423A (en)2016-12-272018-07-05大日本印刷株式会社Perforated substrate, mounting substrate including perforated substrate, and manufacturing method of perforated substrate
JP2018116951A (en)2017-01-162018-07-26富士通株式会社 Circuit board, circuit board manufacturing method, and electronic apparatus
JP2018120902A (en)2017-01-242018-08-02ゼネラル・エレクトリック・カンパニイPower electronics package and method of manufacturing the same
KR20180088599A (en)2017-01-272018-08-06쇼오트 아게Structured plate-like glass element and process for the production thereof
US20180240778A1 (en)2017-02-222018-08-23Intel CorporationEmbedded multi-die interconnect bridge with improved power delivery
JP2018163901A (en)2017-03-242018-10-18イビデン株式会社Print circuit board
JP2018163986A (en)2017-03-242018-10-18大日本印刷株式会社 Through electrode substrate and manufacturing method thereof
JP2018174190A (en)2017-03-312018-11-08大日本印刷株式会社 Through electrode substrate and manufacturing method thereof
JP2018174189A (en)2017-03-312018-11-08大日本印刷株式会社 Through electrode substrate and manufacturing method thereof
KR20180116733A (en)2017-04-142018-10-25한국전자통신연구원Semiconductor package
US20180342451A1 (en)2017-05-252018-11-29Corning IncorporatedSilica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US20180342450A1 (en)2017-05-252018-11-29Corning IncorporatedArticles having vias with geometry attributes and methods for fabricating the same
JP2018199605A (en)2017-05-292018-12-20Agc株式会社 Glass substrate manufacturing method and glass substrate
KR20190003050A (en)2017-06-302019-01-09한국과학기술원Method for Processing Metallization in Through Type Through Glass Via
JP2019016672A (en)2017-07-052019-01-31大日本印刷株式会社 Mounting board and manufacturing method of mounting board
KR20190008103A (en)2017-07-142019-01-23가부시기가이샤 디스코Method for manufacturing a glass interposer
CN109411432A (en)2017-08-182019-03-01财团法人工业技术研究院 Semiconductor packaging redistribution layer structure
TW201929100A (en)2017-12-192019-07-16南韓商三星電子股份有限公司Semiconductor package
KR101903485B1 (en)2018-03-272018-10-02(주)상아프론테크Cassette for loading substrate
CN108878343A (en)2018-06-292018-11-23信利半导体有限公司A kind of manufacturing method of flexible display apparatus
KR101944718B1 (en)2018-07-052019-02-01(주)상아프론테크Insert structure and cassette for loading substrate with the same
JP2018160697A (en)2018-07-062018-10-11大日本印刷株式会社Through electrode substrate
US20230062692A1 (en)*2021-08-262023-03-02Samsung Display Co., Ltd.Cassette for accommodating glass, method for loading glass into cassette, and method for manufacturing cover window

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
International Search Report dated Jul. 1, 2020 in counterpart International Patent Application No. PCT/KR2020/003480 (2 pages in English and 2 pages in Korean).
U.S. Appl. No. 17/433,338, filed Aug. 24, 2021, Kim et al., Absolics Inc.
U.S. Appl. No. 17/433,349, filed Aug. 24, 2021, Kim et al., Absolics Inc.
U.S. Appl. No. 17/434,906, filed Aug. 30, 2021, Kim et al., Absolics Inc.

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US20220048699A1 (en)2022-02-17

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