US11710629B2 - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

The present patent application is a divisional of prior U.S. patent application Ser. No. 16/040,330, filed Jul. 19, 2018, by Tomonori FUJIWARA, Nobuyuki SHIBAYAMA and Yukifumi YOSHIDA, entitled “Substrate Processing Apparatus and Substrate Processing Method, which is a divisional of U.S. patent application Ser. No. 14/487,499, filed Sep. 16, 2014,” now U.S. Pat. No. 10,058,900 B2, issued Aug. 28, 2018, which claims priority to Japanese Patent Application Nos. 2013-201128, filed Sep. 27, 2013 and 2013-201145, filed Sep. 27, 2013. The contents of each of the patent applications listed above are incorporated in full herein by reference.

BACKGROUND OF THE INVENTIONField of the Invention

The present invention relates to a technique of processing a surface peripheral area of a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magnetooptical disk, a glass substrate for a photomask, and a substrate for a solar cell, for example.

Description of the Background Art

Not many device patterns (circuit pattern) are formed to reach a place as near as an end face of a substrate. In many cases, a device pattern is formed on a surface region spaced inward a given width from an end face of a substrate.

However, in a film formation step performed to form a device pattern, a film may be formed to reach a place outside a region where the device pattern is to be formed (this region is hereinafter simply called a “device region”). The film formed outside the device region is not only being unnecessary but it might also become a cause for various troubles. As an example, the film formed outside the device region might come unstuck during a process step. This may bring about the danger for example of yield reduction or a trouble in a substrate processing apparatus.

This may be handled by the process of removing a thin film by etching formed outside a device region (what is called bevel etching process). An apparatus responsible for such process has been suggested (see Japanese Patent Application Laid-Open Nos. 2008-300454, 2011-066194, 2009-070946, 2006-210580, 2001-070861, and 2003-264168, for example).

If a surface peripheral area outside a device region is processed with a processing liquid, the processing liquid supplied to the surface peripheral area might go into the device region (more specifically, the processing liquid might bounce off the surface peripheral area into the device region). Entry of the processing liquid into the device region acts disadvantageously on a device pattern, bringing about the danger of yield reduction.

SUMMARY OF THE INVENTION

The present invention is intended for a substrate processing apparatus. The substrate processing apparatus according to an aspect of this invention includes: a substrate holder to hold a substrate in a horizontal posture, the substrate holder rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes: multiple nozzles; and a support part that supports the nozzles integrally. The nozzles include: a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area; and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

The gas nozzle is placed upstream of the rotative direction of the substrate relative to the processing liquid nozzle. In this structure, an old processing liquid having been supplied from the processing liquid nozzle before one rotation of the substrate and not having been shaken off during this rotation is removed with gas discharged from the gas nozzle. Then, a new processing liquid can be supplied from the processing liquid nozzle to each position within the surface peripheral area. This makes the occurrence of a situation unlikely where a newly supplied processing liquid collides with an old processing liquid on the surface peripheral area to bounce. This suppresses entry of a processing liquid having been used for processing the surface peripheral area into a device region.

In the substrate processing apparatus according to a different aspect of this invention, a target discharge position of the gas nozzle is closer to the center of the substrate than a target discharge position of the processing liquid nozzle. The target discharge position is a position on the substrate about each of the nozzles where a fluid discharged from corresponding one of the nozzles is to reach.

In the surface peripheral area of the substrate, gas is supplied to a position closer to the center of the substrate than a position where the processing liquid is discharged. In this structure, the processing liquid supplied to the surface peripheral area can be removed with gas in a direction from the center of the substrate toward an end face of the substrate. This can suppress entry of the processing liquid on the surface peripheral area into the device region.

In the substrate processing apparatus according to a different aspect of this invention, the processing liquid nozzle of the discharge head for peripheral area includes multiple processing liquid nozzles. The processing liquid nozzles include: a chemical liquid nozzle from which a chemical liquid is discharged; and a rinse liquid nozzle from which a rinse liquid is discharged.

The chemical liquid nozzles from which a chemical liquid is discharged and the rinse liquid nozzle from which a rinse liquid is discharged are supported integrally. This structure simplifies the structure of the apparatus and can adjust the positions of the nozzles relative to each other easily, compared to the case where the nozzles are supported separately.

In the substrate processing apparatus according to a different aspect of this invention, a target discharge position of the rinse liquid nozzle is closer to the center of the substrate than a target discharge position of the chemical liquid nozzle. The target discharge position is a position on the substrate about each of the nozzles where a fluid discharged from corresponding one of the nozzles is to reach.

In the surface peripheral area of the substrate, a rinse liquid is discharged to a position closer to the center of the substrate than a position where a chemical liquid is discharged. In this structure, the chemical liquid supplied to the surface peripheral area can be washed away with the rinse liquid in a direction from the center of the substrate toward the end face. This can wash out the chemical liquid satisfactorily while suppressing entry of the chemical liquid into the device region sufficiently.

In the substrate processing apparatus according to a different aspect of this invention, the chemical liquid nozzle of the discharge head for peripheral area includes multiple chemical liquid nozzles. The chemical liquid nozzles include: a first chemical liquid nozzle from which an acidic chemical liquid is discharged; and a second chemical liquid nozzle from which an alkaline chemical liquid is discharged. The rinse liquid nozzle is placed between the first and second chemical liquid nozzles.

The rinse liquid nozzle from which a rinse liquid is discharged is placed between the first chemical liquid nozzle from which an acidic chemical liquid is discharged and the second chemical liquid nozzle from which an alkaline chemical liquid is discharged. This structure can suppress the occurrence of a situation where an atmosphere generated during discharge of a chemical liquid from one of the chemical liquid nozzles reacts with a chemical liquid remaining inside of the other chemical liquid nozzle, for example.

In the substrate processing apparatus according to a different aspect of this invention, a target discharge position of the first chemical liquid nozzle and a target discharge position of the second chemical liquid nozzle are spaced by the same distance from the end face of the substrate. The target discharge position is a position on the substrate about each of the nozzles where a fluid discharged from corresponding one of the nozzles is to reach.

The target discharge position of the first chemical liquid nozzle and the target discharge position of the second chemical liquid nozzle are spaced by the same distance from the end face of the substrate. Thus, in the surface peripheral area of the substrate, an alkaline chemical liquid can be discharged to a position where an acidic chemical liquid is discharged. This structure allows both of the chemical liquids to act on the same region accurately.

In the substrate processing apparatus according to a different aspect of this invention, the nozzles include a steam nozzle from which steam is discharged toward the surface peripheral area.

The discharge head for peripheral area includes the steam nozzle from which steam is discharged. In this structure, the surface peripheral area can be heated by discharging steam from the steam nozzle toward the surface peripheral area.

In the substrate processing apparatus according to a different aspect of this invention, the steam nozzle is placed upstream of the rotative direction of the substrate relative to the processing liquid nozzle.

The steam nozzle is placed upstream of the rotative direction of the substrate relative to the processing liquid nozzle. In this structure, each position within the surface peripheral area can be supplied with a processing liquid from the processing liquid nozzle after being heated with steam discharged from the steam nozzle. This can accelerate reaction between the processing liquid supplied to the surface peripheral area and the substrate.

In the substrate processing apparatus according to a different aspect of this invention, the processing liquid nozzle includes a chemical liquid nozzle from which a chemical liquid is discharged. A target discharge position of the steam nozzle and a target discharge position of the chemical liquid nozzle are spaced by the same distance from the end face of the substrate. The target discharge position is a position on the substrate about each of the nozzles where a fluid discharged from corresponding one of the nozzles is to reach.

The target discharge position of the steam nozzle and the target discharge position of the chemical liquid nozzle are spaced by the same distance from the end face of the substrate. Accordingly, a position in the surface peripheral area where a chemical liquid is to be discharged can be heated with steam. This structure can effectively accelerate reaction between a chemical liquid supplied to the surface peripheral area and the substrate.

In the substrate processing apparatus according to a different aspect of this invention, the nozzles each include: a nozzle body supported by the support part such that a lower surface of the nozzle body is placed in a horizontal posture; an open discharge port formed in the lower surface of the nozzle body; and a flow path formed inside the nozzle body. The flow path communicates with the discharge port at a lower end of the flow path. The flow path includes a tilted flow path section that extends obliquely downward such that the tilted flow path section gets farther in a lower position in a direction from the center of the substrate toward the end face of the substrate to communicate with the discharge port at a lower end of the tilted flow path section.

The flow path formed inside the nozzle body includes the tilted flow path section that extends obliquely downward such that the tilted flow path section gets farther in a lower position in a direction from the center of the substrate toward the end face of the substrate to communicate with the discharge port at a lower end of the tilted flow path section. This structure allows a fluid discharged from the nozzle toward the surface peripheral area of the substrate to flow in the surface peripheral area of the substrate toward an outer side of the substrate.

The substrate processing apparatus according to a different aspect of this invention includes a controller that controls the substrate holder and the discharge head for peripheral area. While making the substrate holder rotate the substrate, the controller causes discharge of a processing liquid from the processing liquid nozzle toward the surface peripheral area of the rotated substrate and causes discharge of gas from the gas nozzle toward the surface peripheral area.

A processing liquid is discharged from the processing liquid nozzle toward the surface peripheral area of the rotated substrate while gas is discharged toward the surface peripheral area from the gas nozzle placed upstream of the rotative direction of the substrate relative to the processing liquid nozzle. In this structure, an old processing liquid having been supplied from the processing liquid nozzle before one rotation of the substrate and not having been shaken off during this rotation is removed with gas discharged from the gas nozzle. Then, a new processing liquid can be supplied from the processing liquid nozzle to each position within the surface peripheral area. This makes the occurrence of a situation unlikely where a newly supplied processing liquid collides with an old processing liquid on the surface peripheral area to bounce. This suppresses entry of a processing liquid having been used for processing the surface peripheral area into the device region.

In the substrate processing apparatus according to a different aspect of this invention, the processing liquid discharged from the processing liquid nozzle is diluted hydrofluoric acid.

In the substrate processing apparatus according to a different aspect of this invention, the processing liquid discharged from the processing liquid nozzle is a rinse liquid.

The present invention is also intended for a substrate processing method. The substrate processing method according to an aspect of this invention includes the steps of: a) rotating a substrate about a vertical rotary axis passing through the center of a plane of the substrate while holding the substrate in a horizontal posture; b) discharging a processing liquid from a processing liquid nozzle toward a surface peripheral area of the rotated substrate; and c) discharging gas from a gas nozzle toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle. The step c) is performed parallel to the step b).

The substrate processing method according to a different aspect of this invention includes the steps of: a) discharging a first processing liquid toward a surface peripheral area of a substrate while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; b) after discharge of the first processing liquid is stopped, moving the first processing liquid remaining on the surface peripheral area toward an end face of the substrate and shaking off the first processing liquid from the end face toward the outside of the substrate; and c) discharging a second processing liquid toward the surface peripheral area while rotating the substrate. The step c) is performed after the step b).

As a result of the presence of the step of moving the first processing liquid remaining on the surface peripheral area toward the end face of the substrate and shaking off the first processing liquid from the end face toward the outside of the substrate (liquid shake-off step), the second processing liquid is discharged toward the surface peripheral area on which substantially no first processing liquid remains. This makes the occurrence of a situation unlikely where a discharged processing liquid collides with a processing liquid remaining on the surface peripheral area to bounce. This suppresses entry of a processing liquid into a device region.

In the substrate processing method according to a different aspect of this invention, the step b) includes the steps of: b1) rotating the substrate while discharge of a fluid toward the surface peripheral area is stopped; and b2) discharging gas toward the surface peripheral area of the substrate.

The liquid shake-off step includes the step of rotating the substrate while discharge of a fluid toward the surface peripheral area is stopped, and the step of discharging gas toward the surface peripheral area of the substrate. This structure can satisfactorily shake off the first processing liquid remaining on the surface peripheral area in a short time.

In the substrate processing method according to a different aspect of this invention, a rotation speed of the substrate is higher in the step b1) than a rotation speed of the substrate in the step a).

The substrate is rotated at a relatively high speed during the liquid shake-off step. In this structure, the first processing liquid remaining on the surface peripheral area can be shaken off within a particularly short time.

The substrate processing method according to a different aspect of this invention includes the step of d) discharging cover gas toward the center and its vicinity of a surface of the substrate during the steps a), b), and c).

The cover gas is discharged toward the center and its vicinity of the surface of the substrate. This protects the device region from an atmosphere of a processing liquid supplied to the surface peripheral area, for example.

In the substrate processing method according to a different aspect of this invention, the amount of the cover gas discharged in the step b) is larger than the amount of the cover gas discharged in the step a).

The cover gas of a relatively large amount is discharged toward the center and its vicinity of the surface of the substrate during the liquid shake-off step. In this structure, the device region is protected sufficiently for example from an atmosphere of the first processing liquid in the liquid shake-off step.

In the substrate processing method according to a different aspect of this invention, the first processing liquid is SC-2.

In the substrate processing method according to a different aspect of this invention, the first processing liquid is a rinse liquid.

Thus, it is an object of the present invention to provide a technique capable of suppressing entry of a processing liquid having been used for process on a surface peripheral area into a device region.

These and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG.1 a diagrammatic plan view schematically showing a substrate processing system;

FIG.2 is a sectional view showing a peripheral area and its vicinity of a substrate to be processed;

FIGS.3 and4 are diagrammatic perspective views of a substrate processing apparatus;

FIG.5 is a schematic view describing the structure of the substrate processing apparatus;

FIG.6 is a perspective view of a discharge head for peripheral area;

FIG.7 is a side sectional view schematically showing the structure of the tip and its vicinity of a nozzle;

FIG.8 schematically shows examples of target discharge positions of nozzles in a group of the discharge head for peripheral area;

FIGS.9 and10 each show the discharge head for peripheral area as viewed from a downstream side of a rotative direction of a substrate;

FIG.11 is a perspective view of a guard member;

FIG.12 is a plan view taken from above showing a condition where a cup, the guard member, and the discharge head for peripheral area are placed in their respective processing positions;

FIG.13 is a side sectional view taken in a direction indicated by arrows K ofFIG.12;

FIG.14 shows an entire flow of operation performed in the substrate processing apparatus;

FIG.15 shows a flow of preparatory process;

FIG.16 explains the preparatory process;

FIG.17 shows a flow of front surface peripheral process;

FIG.18 explains the front surface peripheral process;

FIG.19 shows a flow of process including back surface process;

FIG.20 explains the process including the back surface process;

FIG.21 shows a discharge head for peripheral area according to a modification as viewed from below;

FIG.22 schematically shows examples of target discharge positions of nozzles in a group of the discharge head for peripheral area according to the modification; and

FIG.23 shows the discharge head for peripheral area according to the modification as viewed from a downstream side of a rotative direction of a substrate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The following describes a preferred embodiment by referring to the drawings. The preferred embodiment described below is an example of an embodiment of the present invention and is not intended to limit the technical scope of the present invention. In order to facilitate understanding, in each drawing referred to in the following description, the dimension of each part or the number of parts of each structure may be exaggerated or simplified.

<1.Substrate Processing System100>

<1-1. Structure>

The structure of asubstrate processing system100 is described below by referring toFIG.1.FIG.1 a diagrammatic plan view schematically showing thesubstrate processing system100.

Thesubstrate processing system100 is a system to successively processmultiple substrates9 one by one. In the below, asubstrate9 to be processed in thesubstrate processing system100 is a circular semiconductor wafer, for example.

Thesubstrate processing system100 includes multiple cells (processing blocks) (more specifically,indexer cell110 and processing cell120) arranged in juxtaposition, and acontroller130 to control each operating mechanism and the like of thecells110 and120.

<Indexer Cell110>

Theindexer cell110 is a cell to transfer anunprocessed substrate9 received from outside the system to theprocessing cell120 and to transport a processedsubstrate9 received from theprocessing cell120 to the outside of the system. Theindexer cell110 includes carrier stages111 on which multiple carriers C are placed, and a substrate transport unit (transfer robot) IR to carry thesubstrate9 into and out of each carrier C.

The carrier C housingunprocessed substrates9 is transported from the outside of the system for example by an OHT (overhead hoist transfer) into the apparatus and then placed on thecarrier stage111. Theunprocessed substrates9 are taken out of the carrier C one by one and processed inside the system. Thesubstrates9 after being processed by the system are housed in the carrier C again. The carrier C housing the processedsubstrates9 are transported to the outside of the system by the OHT, for example. In this way, thecarrier stage111 functions as a substrate collecting unit to collectunprocessed substrates9 and processedsubstrates9. The carrier C can be an FOUP (front opening unified pod)housing substrates9 in hermetically-sealed space, an SMIF (standard mechanical interface) pod, or an OC (open cassette) to exposesubstrates9 housed in the carrier C to external air.

The transfer robot IR includes ahand112 to hold thesubstrate9 in a horizontal posture (posture that places a main surface of thesubstrate9 in a horizontal posture) by supporting thesubstrate9 from below, and ahand drive mechanism113 to drive thehand112. The transfer robot IR takes anunprocessed substrate9 out of the carrier C placed on thecarrier stage111, and transfers thissubstrate9 in a substrate transfer position P to a transport robot CR (described later). The transfer robot IR receives a processedsubstrate9 in the substrate transfer position P from the transport robot CR, and houses thissubstrate9 into the carrier C placed on thecarrier stage111.

<Processing Cell120>

Theprocessing cell120 is a cell to process thesubstrate9. Theprocessing cell120 includes multiplesubstrate processing apparatuses1, and a substrate transport unit (transport robot CR) to carrier thesubstrate9 into and out of thesubstrate processing apparatuses1. Here, multiple (such as three)substrate processing apparatuses1 are stacked in the vertical direction to form one substrateprocessing apparatus group10. Multiple (in the example ofFIG.1, four) substrateprocessing apparatus groups10 are arranged in a cluster pattern (tufted pattern) so as to surround the transport robot CR.

Each of thesubstrate processing apparatuses1 has acasing11 inside that forms processing space. Thecasing11 is given agateway12 through which ahand121 of the transport robot CR is inserted into thecasing11. Thesubstrate processing apparatuses1 are arranged such that theirgateways12 face space where the transport robot CR is placed. The specific structure of thesubstrate processing apparatuses1 is described later.

The transport robot CR includes ahand121 to hold thesubstrate9 in a horizontal posture by supporting thesubstrate9 from below, and ahand drive mechanism122 to drive thehand121. As described above, the transport robot CR (more specifically, a base of the transport robot CR) is placed in the center of the space surrounded by the substrate processing apparatus groups10. The transport robot CR takes a processedsubstrate9 out of a designatedsubstrate processing apparatus1, and transfers thissubstrate9 in the substrate transfer position P to the transfer robot IR. The transport robot CR receives anunprocessed substrate9 in the substrate transfer position P from the transfer robot IR, and transports thissubstrate9 to a designatedsubstrate processing apparatus1.

<Controller130>

Thecontroller130 controls each of the transfer robot IR, the transport robot CR, and thesubstrate processing apparatuses1 in groups. The hardware structure of thecontroller130 can be the same as that of a generally used computer. Specifically, thecontroller130 for example includes a CPU to make various calculations, a ROM as a read-only memory to store a basic program, a RAM as a freely readable and writable memory to store information of various types, and a magnetic disk to store control software or data. In thecontroller130, the CPU functioning as a main controller makes calculations according to a procedure written in a program, thereby realizing each functional unit to control each part of thesubstrate processing system100. Some or all of the functional units realized by thecontroller130 can be realized in terms of hardware by a dedicated logic circuit, for example.

<1-2. Operation>

The overall operation of thesubstrate processing system100 is described below by further referring toFIG.1. In thesubstrate processing system100, thecontroller130 controls each part of thesubstrate processing system100 according to a recipe describing a procedure for transporting thesubstrate9, a condition for processing thesubstrate9 and the like, thereby executing a series of operations described below.

When the carrier C housing anunprocessed substrate9 is placed on thecarrier stage111, the transfer robot IR takes theunprocessed substrate9 out of this carrier C. Then, the transfer robot IR moves thehand112 holding theunprocessed substrate9 to the substrate transfer position P and transfers theunprocessed substrate9 in the substrate transfer position P to the transport robot CR. The transport robot CR having received theunprocessed substrate9 transferred onto thehand121 transports theunprocessed substrate9 into asubstrate processing apparatus1 designated in the recipe. Transfer of thesubstrate9 between the transfer robot IR and the transport robot CR can be done directly between thehands112 and121 or through a placement unit provided in the substrate transfer position P, for example.

Thesubstrate processing apparatus1 having received thesubstrate9 performs prescribed process on thesubstrate9. A flow of the process performed in thesubstrate processing apparatus1 is described later.

After the process on thesubstrate9 is finished in thesubstrate processing apparatus1, the transport robot CR takes the processedsubstrate9 out of thesubstrate processing apparatus1. Then, the transport robot CR moves thehand121 holding the processedsubstrate9 to the substrate transfer position P and transfers the processedsubstrate9 in the substrate transfer position P to the transfer robot IR. The transfer robot IR having received the processedsubstrate9 transferred onto thehand112 houses the processedsubstrate9 into the carrier C.

In thesubstrate processing system100, the transport robot CR and the transfer robot IR perform the aforementioned transporting operation repeatedly according to the recipe and eachsubstrate processing apparatus1 processes thesubstrate9 according to the recipe. As a result, thesubstrates9 are processed one after another.

<2.Substrate9>

Thesubstrate9 to be processed by thesubstrate processing apparatus1 is described next by referring toFIG.2.FIG.2 is a sectional view showing a peripheral area and its vicinity of thesubstrate9.

Thesubstrate9 to be processed by thesubstrate processing apparatus1 has a three-layer structure including acenter layer901 made for example of silicon (Si), anunderlying film902 outside thecenter layer901, and anoverlying film903 outside theunderlying film902. Theunderlying film902 is a thermally-oxidized film (Th—SiO₂) or a dielectric film (such as an Hf (hafnium) film or an Hf oxide film), for example. Theoverlying film903 is a barrier metal film (such as a TiN film or a TaN film) or a metal film (such as an Al film, a W film, an NiSi film or a Cu film). Thesubstrate9 to be processed by thesubstrate processing apparatuses1 may also have a two-layer structure including thecenter layer901 and theunderlying film902, or a structure with four layers or more.

In the below, a main surface of thesubstrate9 on which a device pattern is to be formed is called a “front surface91,” and a surface opposite thefront surface91 is called a “back surface92.” A region of thefront surface91 where the device pattern is to be formed is called a “device region90.” A peripheral area of thefront surface91 outside the device region90 (more specifically, this peripheral area is an annular region of a minute width d (d=0.5 mm to 3.0 mm (millimeters), for example) extending from anend face93 of the substrate9) is called a “front surfaceperipheral area911.” An annular region of the minute width d extending from anend face93 of theback surface92 is called a “back surfaceperipheral area921.”

Thesubstrate processing apparatus1 is to process thesubstrate9 of the aforementioned multilayer structure and can process the front surfaceperipheral area911 and theback surface92 of the substrate9 (such as removal of a thin film formed on the front surfaceperipheral area911 and theback surface92, for example).

<3. Structure ofSubstrate Processing Apparatus1>

The following describes the structure of thesubstrate processing apparatus1 by referring toFIGS.3 to5.FIG.3 is a diagrammatic perspective view of thesubstrate processing apparatus1 showing a condition wheresemicircular members61 and62 forming aguard member60, acup31, and adischarge head51 for peripheral area are placed in their respective retreat positions.FIG.4 is also a diagrammatic perspective view of thesubstrate processing apparatus1 showing a condition where theguard member60, thecup31, and thedischarge head51 are placed in their respective processing positions.FIG.5 is a schematic view describing the structure of thesubstrate processing apparatus1.

In the following description, a “processing liquid” includes a “chemical liquid” used in chemical liquid process, and a “rinse liquid” used in rinsing process performed to wash out the chemical liquid.

Thesubstrate processing apparatus1 includes aspin chuck2, ananti-splash unit3, a frontsurface protecting unit4, aperipheral processing unit5, a liquidbounce suppressing unit6, a heat processing unit7, and a backsurface processing unit8. Each of theseunits2 to8 is electrically connected to thecontroller130 and operates in response to an order from thecontroller130.

<Spin Chuck2>

Thespin chuck2 is a substrate holder to hold thesubstrate9 in a substantially horizontal posture while pointing thefront surface91 of thesubstrate9 upward. Thespin chuck2 rotates thesubstrate9 about a vertical rotary axis passing through the center of thefront surface91 of thesubstrate9.

Thespin chuck2 includes aspin base21 that is a circular plate member slightly larger than thesubstrate9. Arotary shaft part22 is coupled to a lower surface central area of thespin base21. Therotary shaft part22 is placed in a posture that makes the shaft line of therotary shaft part22 extend in the vertical direction. Therotary shaft part22 is connected to a rotary drive part (such as a motor)23 to rotate therotary shaft part22 about the shaft line of therotary shaft part22. Therotary shaft part22 and therotary drive part23 are housed in atubular casing24. Appropriately spaced multiple (such as six) holdingmembers25 are provided on a peripheral area and its vicinity of the upper surface of thespin base21. The holdingmembers25 make abutting contact with theend face93 of thesubstrate9 to determine the position of thesubstrate9 in the horizontal direction while holding thesubstrate9 in a substantially horizontal posture in a position slightly higher than the upper surface of the spin base21 (specifically, in a position spaced by a given distance from the upper surface of the spin base21).

In this structure, therotary drive part23 rotates therotary shaft part22 while the holdingmembers25 hold thesubstrate9 above thespin base21. This rotates thespin base21 about a shaft center extending in the vertical direction, thereby rotating thesubstrate9 held on thespin base21 about the vertical rotary axis passing through the center of the plane of thesubstrate9.

The holdingmembers25 and therotary drive part23 are electrically connected to thecontroller130 and operate under control by thecontroller130. Specifically, thecontroller130 controls timing of holding thesubstrate9 onto thespin base21, timing of releasing thesubstrate9, and a mode of rotation of the spin base21 (more specifically, timing of starting rotation, timing of finishing the rotation, and the frequency of rotation (specifically, a rotation speed), for example).

<Anti-Splash Unit3>

Theanti-splash unit3 receives a processing liquid and the like splashed from a rotatedsubstrate9 held on thespin base21.

Theanti-splash unit3 includes thecup31. Thecup31 is a tubular member with an open top end. Thecup31 is provided so as to surround thespin chuck2. In this preferred embodiment, thecup31 is composed for example of three members including aninner member311, anintermediate member312, and anouter member313.

Theinner member311 is a tubular member with an open top end. Theinner member311 has a bottom part311aof a circular ring shape, a circularly cylindricalinner wall part311bextending upward from an inner edge portion of the bottom part311a, a circularly cylindricalouter wall part311cextending upward from an outer edge portion of the bottom part311a, and a circularlycylindrical guide wall311dstanding upright between the inner andouter wall parts311band311c. Theguide wall311dextends upward from the bottom part311a. Theguide wall311dcurves inward and upward at an upper end portion and its vicinity. Theinner wall part311bis housed, at least at its tip and the vicinity thereof, in internal space defined by aflange member241 of thecasing24 of thespin chuck2.

The bottom part311ais provided with a drain groove (not shown in the drawings) that makes communication with space between theinner wall part311band theguide wall311d. This drain groove is connected to a drain line of a factory. This drain groove is connected to an evacuation and drain mechanism to exhaust air compulsorily out of the inside of the drain groove to place the space between theinner wall part311band theguide wall311din a negative pressure. The space between theinner wall part311band theguide wall311dis space where a processing liquid having been used for processing thesubstrate9 is gathered for drainage. The processing liquid gathered in this space is drained out of the drain groove.

The bottom part311ais further provided with a first collection groove (not shown in the drawings) that makes communication with space between theguide wall311dand theouter wall part311c. The first collection groove is connected to a first collection tank. The first collection groove is connected to an evacuation and drain mechanism to exhaust air compulsorily out of the inside of the first collection groove to place the space between theguide wall311dand theouter wall part311cin a negative pressure. The space between theguide wall311dand theouter wall part311cis space where a processing liquid having been used for processing thesubstrate9 is gathered for collection. The processing liquid gathered in this space passes through the first collection groove to be collected in the first collection tank.

Theintermediate member312 is a tubular member with an open top end and is arranged outside theguide wall311dof theinner member311. Theintermediate member312 curves inward and upward at an upper portion. Theintermediate member312 has a top edge portion bent so as to extend along a top edge portion of theguide wall311d.

Theintermediate member312 has an inner circumferential wall part312aextending downward along an inner circumferential surface and an outercircumferential wall part312bextending downward along an outer circumferential surface that are formed at a lower portion of theintermediate member312. In a condition where the inner andintermediate members311 and312 are close to each other (condition ofFIG.5), the inner circumferential wall part312ais housed between theguide wall311dand theouter wall part311cof theinner member311. The lower end of the outercircumferential wall part312bis attached to an inner edge portion of abottom part312cof a circular ring shape. A circularly cylindricalouter wall part312dstands upward from an outer edge portion of thebottom part312c.

Thebottom part312cis provided with a second collection groove (not shown in the drawings) that makes communication with space between the outercircumferential wall part312band theouter wall part312d. The second collection groove is connected to a second collection tank. The second collection groove is connected to an evacuation and drain mechanism to exhaust air compulsorily out of the inside of the second collection groove to place the space between the outercircumferential wall part312band theouter wall part312din a negative pressure. The space between the outercircumferential wall part312band theouter wall part312dis space where a processing liquid having been used for processing thesubstrate9 is gathered for collection. The processing liquid gathered in this space passes through the second collection groove to be collected in the second collection tank.

Theouter member313 is a tubular member with an open top end and is arranged outside theintermediate member312. Theouter member313 curves inward and upward at an upper portion. Theouter member313 has atop edge portion301 that is bent downward in a position slightly inside the respective top edge portions of the intermediate andinner members312 and311. In a condition where the inner, intermediate, andouter members311,312, and313 are close to each other (condition ofFIG.5), the respective top edge portions of the intermediate andinner members312 and311 are covered by the bent portion of theouter member313.

Theouter member313 has a lower portion provided with an innercircumferential wall part313aextending downward along an inner circumferential surface. In a condition where the intermediate andouter members312 and313 are close to each other (condition ofFIG.5), the innercircumferential wall part313ais housed between the outercircumferential wall part312band theouter wall part312dof theintermediate member312.

Thecup31 is provided with acup drive mechanism32 to move thecup31 up and down. Thecup drive mechanism32 is composed for example of a stepping motor. In this preferred embodiment, thecup drive mechanism32 moves the threemembers311,312, and313 of thecup31 up and down independently.

Each of the inner, intermediate, andouter members311,312 and313 is moved between an upper position and a lower position in response to drive by thecup drive mechanism32. The respective upper positions of themembers311,312 and313 are positions that place respective top edge portions of themembers311,312 and313 lateral to thesubstrate9 held on thespin base21. The respective lower positions of themembers311,312 and313 are positions that place respective top edge portions of themembers311,312, and313 below the upper surface of thespin base21. Thecup drive mechanism32 is electrically connected to thecontroller130 and operates under control by thecontroller130. Specifically, the position of the cup31 (more specifically, the respective positions of the inner, intermediate, andouter members311,312, and313) is controlled by thecontroller130.

In the below, “thecup31 being placed in a retreat position” means a condition where theouter member313 is placed in its lower position (specifically, a condition where all the inner, intermediate, andouter members311,312, and313 are placed in their lower positions). Where thesubstrate9 is not held on thespin base21, thecup31 is placed in the retreat position. Specifically, where thesubstrate9 is not held on thespin base21, thecup31 is in a position that places the top edge portion of the cup31 (specifically, thetop edge portion301 of the outer member313) below the upper surface of thespin base21.

In the below, “thecup31 being placed in a processing position” means a condition where theouter member313 is placed in its upper position. The top edge portion of the cup31 (specifically, thetop edge portion301 of the outer member313) in the processing position is placed lateral to thesubstrate9 held on thespin base21. “Thecup31 being placed in the processing position” includes three conditions as follows. In a first condition, all the inner, intermediate, andouter members311,312, and313 are placed in their upper positions (condition ofFIG.5). In this condition, a processing liquid splashed from thesubstrate9 held by thespin chuck2 is gathered in the space between theinner wall part311band theguide wall311dof theinner member311 and is then drained out of the drain groove. In a second condition, theinner member311 is placed in its lower position whereas the intermediate andouter members312 and313 are placed in their upper positions. In this condition, a processing liquid splashed from thesubstrate9 held by thespin chuck2 is gathered in the space between theguide wall311dand theouter wall part311cof theinner member311 and is then collected in the first collection tank. In a third condition, the inner andintermediate members311 and312 are placed in their lower positions whereas theouter member313 is placed in its upper position. In this condition, a processing liquid splashed from thesubstrate9 held by thespin chuck2 is gathered in the space between the outercircumferential wall part312band theouter wall part312dof theintermediate member312 and is then collected in the second collection tank.

<FrontSurface Protecting Unit4>

The frontsurface protecting unit4 supplies gas (cover gas) to the center and its vicinity of thefront surface91 of thesubstrate9 held on thespin base21, thereby protecting thedevice region90 from the atmosphere of a processing liquid supplied to the front surfaceperipheral area911, for example.

The frontsurface protecting unit4 includes acover gas nozzle41 from which gas is discharged toward the center and its vicinity of thefront surface91 of thesubstrate9 held on thespin base21. Thecover gas nozzle41 is attached to a tip portion of a horizontally extendingarm42. A base end portion of thearm42 is coupled to anozzle base43. Thenozzle base43 is placed in a posture that makes the axis line of thenozzle base43 extend in the vertical direction. The base end portion of thearm42 is coupled to the upper end of thenozzle base43.

Thenozzle base43 is provided with adrive unit44 to drive thecover gas nozzle41. Thedrive unit44 is composed for example of a rotation drive part (such as a servomotor) to rotate thenozzle base43 about the axis line of thenozzle base43, and an up-and-down drive part (such as a stepping motor) to expand and contract thenozzle base43 along the axis line of thenozzle base43. In response to rotation of thenozzle base43 by thedrive unit44, thecover gas nozzle41 moves along an arcuate orbit in a horizontal plane. In response to expansion or contraction of thenozzle base43 by thedrive unit44, thecover gas nozzle41 moves in a direction where thecover gas nozzle41 gets closer to or farther from thesubstrate9.

In response to drive by thedrive unit44, thecover gas nozzle41 moves between a processing position and a retreat position. The processing position of thecover gas nozzle41 mentioned herein is a position above thesubstrate9 held on thespin base21 that makes thecover gas nozzle41 face the center and its vicinity of thefront surface91 while placing thecover gas nozzle41 close to thefront surface91 in a noncontact manner. The retreat position of thecover gas nozzle41 is a position that does not interfere with a transport path for thesubstrate9 which is outside thetop edge portion301 of thecup31 as viewed from above, for example. Thedrive unit44 is electrically connected to thecontroller130 and operates under control by thecontroller130. Specifically, the position of thecover gas nozzle41 is controlled by thecontroller130.

Thecover gas nozzle41 is connected to acover gas supplier45 that is a pipe system to supply gas (nitrogen (N₂) gas is supplied here, for example) to thecover gas nozzle41. As an example, the specific structure of thecover gas supplier45 includes anitrogen gas source451 as a source for nitrogen gas that is connected to thecover gas nozzle41 through apipe452 in which an open-close valve453 is interposed. In this structure, opening the open-close valve453 discharges nitrogen gas from thecover gas nozzle41 supplied from thenitrogen gas source451. Gas to be supplied to thecover gas nozzle41 can be different from nitrogen gas (such as inert gases of various types except nitrogen gas or dry air).

If gas is supplied from thecover gas supplier45 to thecover gas nozzle41 placed in the processing position, gas (cover gas) is discharged from thecover gas nozzle41 toward the center and its vicinity of thefront surface91 of thesubstrate9 held on thespin base21. The open-close valve453 of thecover gas supplier45 is electrically connected to thecontroller130 and is opened and closed under control by thecontroller130. Specifically, a mode of discharge of gas from the cover gas nozzle41 (more specifically, timing of starting discharge, timing of finishing the discharge, and discharge flow rate, for example) is controlled by thecontroller130.

<Peripheral Processing Unit5>

Theperipheral processing unit5 is to process the front surfaceperipheral area911 of thesubstrate9 held on thespin base21.

<i. Overall Structure>

Theperipheral processing unit5 includes thedischarge head51 from which a fluid is discharged (here, processing liquid and gas) toward the front surfaceperipheral area911 of thesubstrate9 held on thespin base21. Thedischarge head51 is attached to a tip portion of a horizontally extendingarm52. A base end portion of thearm52 is coupled to anozzle base53. Thenozzle base53 is placed in a posture that makes the axis line of thenozzle base53 extend in the vertical direction. The base end portion of thearm52 is coupled to the upper end of thenozzle base53.

Thenozzle base53 is provided with adrive unit54 to drive thedischarge head51. Thedrive unit54 is composed for example of a rotation drive part (such as a servomotor) to rotate thenozzle base53 about the axis line of thenozzle base53, and an up-and-down drive part (such as a stepping motor) to expand and contract thenozzle base53 along the axis line of thenozzle base53. In response to rotation of thenozzle base53 by thedrive unit54, thedischarge head51 moves along an arcuate orbit in a horizontal plane. In response to expansion or contraction of thenozzle base53 by thedrive unit54, thedischarge head51 moves in a direction where thedischarge head51 gets closer to or farther from thesubstrate9.

In response to drive by thedrive unit54, thedischarge head51 moves between a processing position and a retreat position. The processing position of thedischarge head51 mentioned herein is a position (position ofFIG.4) above thesubstrate9 held on thespin base21 that makes thedischarge head51 face the front surfaceperipheral area911 while placing thedischarge head51 close to the front surfaceperipheral area911 in a noncontact manner. While thedischarge head51 is placed in the processing position, at least part of thedischarge head51 is housed in acut605 formed in an innercircumferential wall601 of theguard member60 described later. The retreat position of thedischarge head51 is a position (position ofFIG.3) that does not interfere with the transport path for thesubstrate9 which is outside thetop edge portion301 of thecup31 as viewed from above, for example. Thedrive unit54 is electrically connected to thecontroller130 and operates under control by thecontroller130. Specifically, the position of thedischarge head51 is controlled by thecontroller130.

Thedischarge head51 is connected to afluid supplier55 that is a pipe system to supply a fluid (more specifically, processing liquid and gas) to thedischarge head51. More specifically, thefluid supplier55 is formed by combining for example of an acidic chemicalliquid source551a, an alkaline chemicalliquid source551b, a rinseliquid source551c, anitrogen gas source551d,multiple pipes552a,552b,552cand552d, and multiple open-close valves553a,553b,553cand553d.

The acidic chemicalliquid source551ais a source to supply an acidic chemical liquid. As an example, the acidic chemicalliquid source551amentioned herein can selectively supply diluted hydrofluoric acid (hereinafter called “DHF”) and hydrochloric acid-hydrogen peroxide-water (chemical liquid hereinafter called “SC-2” containing hydrochloric acid (HCl), hydrogen peroxide (H₂O₂), and pure water (DIW: deionized water) mixed in a prescribed ratio). The acidic chemicalliquid source551ais connected to the discharge head51 (more specifically, to a “first chemicalliquid nozzle50a” described later) through apipe552ain which an open-close valve553ais interposed. Accordingly, opening the open-close valve553adischarges an acidic chemical liquid (DHF or SC-2) from the first chemicalliquid nozzle50asupplied from the acidic chemicalliquid source551a. The acidic chemicalliquid source551adoes not always supply DHF and SC-2 selectively. As an example, the acidic chemicalliquid source551amay supply at least one of DHF, SC-2, BDHF (buffered hydrofluoric acid), HF (hydrofluoric acid), hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid, and mixed solutions thereof, for example.

The alkaline chemicalliquid source551bis a source to supply an alkaline chemical liquid. As an example, the alkaline chemicalliquid source551bmentioned herein can supply ammonia-hydrogen peroxide-water (chemical liquid hereinafter called “SC-1” containing ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂), and pure water mixed in a prescribed ratio). The alkaline chemicalliquid source551bis connected to the discharge head51 (more specifically, to a “second chemicalliquid nozzle50b” described later) through apipe552bin which an open-close valve553bis interposed. Accordingly, opening the open-close valve553bdischarges an alkaline chemical liquid (SC-1) from the second chemicalliquid nozzle50bsupplied from the alkaline chemicalliquid source551b. It is preferable that SC-1 to be supplied from the alkaline chemicalliquid source551bbe controlled in temperature to fall in a range of from 60° C. to 80° C., for example. The alkaline chemicalliquid source551bmay supply a chemical liquid (such as ammonia aqueous solution) other than SC-1.

The rinseliquid source551cis a source to supply a rinse liquid. The rinseliquid source551cmentioned herein supplies for example pure water (carbonated water) as a rinse liquid containing dissolved carbon dioxide (CO2). The rinseliquid source551cis connected to the discharge head51 (more specifically, to a “rinseliquid nozzle50c” described later) through apipe552cin which an open-close valve553cis interposed. Accordingly, opening the open-close valve553cdischarges a rinse liquid from the rinseliquid nozzle50csupplied from the rinseliquid source551c. A rinse liquid to be used can be pure water, warm water, ozone water, magnetic water, regenerated water (hydrogen water), various organic solvents, ionized water, IPA (isopropyl alcohol) and functional water, for example.

Thenitrogen gas source551dis a source to supply gas (nitrogen (N₂) gas is supplied here, for example). Thenitrogen gas source551dis connected to the discharge head51 (more specifically, to a “gas nozzle50d” described later) through apipe552din which an open-close valve553dis interposed. Accordingly, opening the open-close valve553ddischarges nitrogen gas from thegas nozzle50dsupplied from thenitrogen gas source551d. Thenitrogen gas source551dmay supply gas other than nitrogen gas (such as inert gases of various types other than nitrogen gas or dry air).

When a processing liquid (acidic chemical liquid (DHF or SC-2), alkaline chemical liquid (SC-1), or rinse liquid) is supplied from thefluid supplier55 to thedischarge head51 placed in the processing position, the processing liquid is discharged from thedischarge head51 toward the front surfaceperipheral area911 of thesubstrate9 held on thespin base21. If gas is supplied from thefluid supplier55 to thedischarge head51 placed in the processing position, the gas is discharged from thedischarge head51 toward the front surfaceperipheral area911 of thesubstrate9 held on thespin base21. The open-close valves553a,553b,553cand553dof thefluid supplier55 are each electrically connected to thecontroller130 and are opened and closed under control by thecontroller130. Specifically, a mode of discharge of a fluid from the discharge head51 (more specifically, type of fluid to be discharged, timing of starting discharge, timing of finishing the discharge, and discharge flow rate, for example) is controlled by thecontroller130.

<ii.Discharge Head51 for Peripheral Area>

Thedischarge head51 is described in more detail by referring toFIG.6.FIG.6 is a perspective view of thedischarge head51. For the convenience of description, theguard member60 and thecup31 are omitted fromFIG.6.

Thedischarge head51 includes the multiple (here, four)nozzles50ato50d, and asupport part500 that supports thenozzles50ato50dintegrally.

Thenozzles50ato50din a group include one or more (here, three) nozzles (hereinafter also called “processing liquid nozzles”)50a,50band50cfrom which processing liquids are discharged toward the front surfaceperipheral area911, and the nozzle (hereinafter also called “gas nozzle”)50dfrom which gas (here, nitrogen gas) is discharged toward the front surfaceperipheral area911. In particular, the processingliquid nozzles50a,50band50cof thedischarge head51 include two nozzles (hereinafter also called “chemical liquid nozzles”)50aand50bfrom which chemical liquids are discharged, and the nozzle (hereinafter also called a “rinse liquid nozzle”)50cfrom which a rinse liquid is discharged. More particularly, thechemical liquid nozzles50aand50bof thedischarge head51 include the nozzle (hereinafter also called a “first chemical liquid nozzle”)50afrom which an acidic chemical liquid is discharged, and the nozzle (hereinafter also called a “second chemical liquid nozzle”)50bfrom which an alkaline chemical liquid is discharged.

Thesupport part500 that supports thenozzles50ato50din a group integrally is fixed to theaforementioned arm52. Thesupport part500 is a member curving in a arcuate pattern extending along the front surfaceperipheral area911 as viewed from above. Thenozzles50ato50din a group are arranged in a direction where thesupport part500 curving in an arcuate pattern extends. Accordingly, while thedischarge head51 is placed in the processing position, thenozzles50ato50din a group are aligned along the front surfaceperipheral area911 of thesubstrate9. Thegas nozzle50d, the first chemicalliquid nozzle50a, the rinseliquid nozzle50c, and the second chemicalliquid nozzle50bare arranged in a rotative direction AR9 of thesubstrate9 in the order named as viewed from an upstream side of the rotative direction AR9.

Specifically, in thedischarge head51, thegas nozzle50dis placed upstream of the rotative direction AR9 of thesubstrate9 relative to the processingliquid nozzles50a,50band50c. Thus, in thesubstrate9 to be rotated, each position within the front surfaceperipheral area911 of thesubstrate9 first passes through a place below thegas nozzle50dand then passes through places below the processingliquid nozzles50a,50band50c. In this structure, before being supplied with a new processing liquid from the processingliquid nozzle50a,50bor50c, each position within the front surfaceperipheral area911 of the rotatedsubstrate9 can be supplied with gas from thegas nozzle50d(specifically, gas can be sprayed onto this position).

According to a surface condition of thesubstrate9, for example, a processing liquid having been supplied from the processingliquid nozzle50a,50bor50cbefore one rotation of thesubstrate9 and not having been shaken off during this rotation may adhere to each position within the front surfaceperipheral area911 having reached a place below thedischarge head51. In this case, such an old processing liquid can be removed with gas discharged from thegas nozzle50dand then new processing liquids can be supplied from the processingliquid nozzles50a,50band50c. This structure makes the occurrence of a situation unlikely where a processing liquid newly supplied to each position within the front surfaceperipheral area911 collides with an old processing liquid to bounce. This suppresses entry of a processing liquid into thedevice region90. Further, this structure allows thesubstrate9 to be always acted on by a fresh processing liquid, thereby enhancing processing efficiency. It is assumed that a new processing liquid is supplied further to a place where an old chemical liquid remains unremoved. In this case, the processing liquid might temporarily remain in large amount in this place. In contrast, the structure of removing an old chemical liquid with gas and then supplying a new processing liquid makes the occurrence of a situation unlikely where a processing liquid temporarily remains in large amount in each position within the front surfaceperipheral area911. This can stabilize the dimension of a region to be acted on by a processing liquid. As an example, this can stabilize the dimension of a region to be acted on by a chemical liquid for etching, specifically a width between theend face93 and a place inside thesubstrate9 to be removed by etching (hereinafter simply called an “etching width”), so that the etching width can be controlled with a higher degree of accuracy.

From a different viewpoint, in thedischarge head51, the processingliquid nozzles50a,50band50care placed downstream of the rotative direction AR9 of thesubstrate9 relative to thegas nozzle50d. Thus, in thesubstrate9 to be rotated, each position within the front surfaceperipheral area911 of thesubstrate9 passes through places below the processingliquid nozzles50a,50band50cand then reaches a place below thegas nozzle50dafter thesubstrate9 is rotated substantially one turn. This structure makes at least some of the processing liquids supplied from the processingliquid nozzles50a,50band50cto each position within the front surfaceperipheral area911 stay on the front surfaceperipheral area911 while thesubstrate9 is rotated substantially one turn. Thus, each position within the front surfaceperipheral area911 can be acted on satisfactorily by a processing liquid.

In thedischarge head51, the rinseliquid nozzle50cfrom which a rinse liquid is discharged is placed between the first chemicalliquid nozzle50afrom which an acidic chemical liquid is discharged and the second chemicalliquid nozzle50bfrom which an alkaline chemical liquid is discharged. This structure can suppress the occurrence of a situation where an atmosphere generated during discharge of a chemical liquid from one of the chemical liquid nozzles reacts with a chemical liquid remaining inside of the other chemical liquid nozzle, for example. As a more specific example, this structure can suppress the occurrence of a situation where an atmosphere generated during discharge of an acidic chemical liquid from the first chemicalliquid nozzle50areacts with an alkaline chemical liquid remaining inside of the second chemicalliquid nozzle50b, or an atmosphere generated during discharge of an alkaline chemical liquid from the second chemicalliquid nozzle50breacts with an acidic chemical liquid remaining inside of the first chemicalliquid nozzle50a.

<iii.Nozzle50>

The following describes the structure of each of thenozzles50ato50din a group of thedischarge head51 by referring toFIG.7. Thenozzles50ato50din a group have substantially the same structure. In the below, where thenozzles50ato50dare not to be distinguished from each other, they may also be called a “nozzle50” simply.FIG.7 is a side sectional view schematically showing the structure of the tip and its vicinity of thenozzle50.

Thenozzle50 includes anozzle body501 having an outer shape of an elongated bar with a narrowed lower end. Thenozzle body501 has an axis direction extending in the vertical direction. Thenozzle body501 is supported by thesupport part500 such that a lower surface (hereinafter also called a “discharge surface”)502 of thenozzle body501 is placed in a horizontal posture. Thus, while thedischarge head51 is in the processing position, thedischarge surface502 in a posture parallel to thefront surface91 of thesubstrate9 held on thespin base21 is placed to be close to the front surfaceperipheral area911 in a noncontact manner. A distance m determined in this condition between thedischarge surface502 and the front surfaceperipheral area911 is sufficiently small (distance m is about 1 mm, for example).

Anintroduction flow path503 and adischarge flow path504 communicating with the lower end of theintroduction flow path503 are formed inside thenozzle body501. The upper end of theintroduction flow path503 is connected to one of theaforementioned pipes552a,552b,552cand552d. The lower end of thedischarge flow path504 communicates with anopen discharge port505 formed in thedischarge surface502. As an example, thedischarge port505 is a circular through hole having a diameter for example of 0.6 mm that is smaller than the minute width d extending from theend face93 of thesubstrate9 shown inFIG.2. Thus, a fluid supplied from a pipe is first held in theintroduction flow path503. Then, the fluid flows into thedischarge flow path504 to be discharged from thedischarge port505.

Thedischarge flow path504 is bent in the middle. More specifically, thedischarge flow path504 has a verticalflow path section5041 and a tiltedflow path section5042 extending continuously from the verticalflow path section5041. The verticalflow path section5041 extends parallel to the axis direction of thenozzle body501 to communicate with the tiltedflow path section5042 at a lower end of the verticalflow path section5041. The tiltedflow path section5042 extends obliquely downward such that the it gets farther in a lower position from an inner side of the substrate9 (on the part of the center of the substrate9) toward an outer side of the substrate9 (on the part of the end face93) to communicate with thedischarge port505 at a lower end of the tiltedflow path section5042.

In thenozzle50, a fluid passes through the obliquely extending tiltedflow path section5042 and is then discharged from thedischarge port505. Thus, a fluid discharged from thenozzle50 toward the front surfaceperipheral area911 of thesubstrate9 can be caused to flow toward the outside of thesubstrate9 in the front surfaceperipheral area911. This can suppress flow of a processing liquid into thedevice region90 having been discharged from thenozzle50 toward the front surfaceperipheral area911, for example. This can also stabilize the dimension of a region to be acted on by this processing liquid (as an example, stabilize the dimension of a region to be acted on by a chemical liquid for etching, specifically an etching width), so that this dimension can be controlled with a higher degree of accuracy. Further, while gas is discharged from thenozzle50 toward the front surfaceperipheral area911, a gas flow traveling toward an outer side of thesubstrate9 can be formed in the front surfaceperipheral area911, for example. This gas flow can blow away a processing liquid or mist of the processing liquid on the front surfaceperipheral area911 to the outer side of thesubstrate9.

In particular, in thenozzle50, thenozzle body501 itself is not in a tilted posture while supported by thesupport part500 but the tiltedflow path section5042 forming part of thedischarge flow path504 inside thenozzle body501 is tilted. It is assumed that a flow path extending straight along the axis direction of a nozzle body is formed inside the nozzle body and the nozzle body itself is in a tilted posture to tilt a discharge surface relative to a horizontal plane. This might easily generate an accumulation of liquid near the lowest end of the discharge surface and this accumulation might drop onto the substrate9 (dripping). Such dripping of a processing liquid is caused in a position on an inner side (on the part of the center of the substrate9) relative to a position where the processing liquid is to be supplied originally, so that this processing liquid is hard to remove even with gas discharged from thegas nozzle50d. In contrast, in this preferred embodiment, not thenozzle body501 but part of thedischarge flow path504 formed inside thenozzle body501 is tilted. This structure can place thedischarge surface502 in a horizontal posture, making the aforementioned dripping of a processing liquid unlikely.

To control the width of a region to be acted on by a processing liquid (such as an etching width to be acted on by a chemical liquid for etching) with a higher degree of accuracy, it is preferable that an angle (angle of tilt) θ formed between a direction where the tiltedflow path section5042 extends and a horizontal plane be 45 degrees or more, more preferably, 60 degrees or more.

<iv. Target Discharge Position>

A position on thesubstrate9 where a fluid discharged from each of thenozzles50ato50din a group of thedischarge head51 is to reach is called a “target discharge position” of this nozzle. The following describes target discharge positions Qa to Qd of thenozzles50ato50din a group respectively by referring toFIGS.8 to10.FIG.8 schematically shows examples of target discharge positions of thenozzles50ato50d.FIGS.9 and10 show thedischarge head51 as viewed from a downstream side of the rotative direction AR9 of thesubstrate9.FIG.9 shows a condition where a chemical liquid and gas are discharged from thedischarge head51.FIG.10 show a condition where a rinse liquid and gas are discharged from thedischarge head51.

The respective target discharge positions Qa to Qd of thenozzles50ato50din a group of thedischarge head51 are shifted from each other in the radial direction of thesubstrate9. Specifically, the target discharge position Qd of thegas nozzle50dis on an inner side of the radial direction of the substrate9 (on the part of the center) relative to the respective target discharge positions Qa, Qb and Qc of the processingliquid nozzles50a,50band50c. The target discharge position Qc of the rinseliquid nozzle50cis on an inner side of the radial direction of thesubstrate9 relative to the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50aand50b. The target discharge position Qa of the first chemicalliquid nozzle50aand the target discharge position Qb of the second chemicalliquid nozzle50bare the same in the radial direction. “Positions being the same in the radial direction” means positions spaced by the same distance from theend face93 of the substrate9 (specifically, positions spaced by the same distance from the center of the substrate9). Here, the target discharge position Qa of the first chemicalliquid nozzle50aand the target discharge position Qb of the second chemicalliquid nozzle50bare spaced by the same distance from theend face93 of thesubstrate9.

By way of example, the target discharge position Qa of the first chemicalliquid nozzle50aand the target discharge position Qb of the second chemicalliquid nozzle50bare both separated inward from theend face93 of thesubstrate9 by 1.0 mm. The target discharge position Qd of thegas nozzle50dis spaced inward in thesubstrate9 from the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50band50bby 0.5 mm. The target discharge position Qc of the rinseliquid nozzle50cis separated from theend face93 of thesubstrate9 by a distance of from 1.0 to 0.5 mm.

All thenozzles50ato50dare supported by thesupport part500 while being placed in their positions shifted from each other in the radial direction of thesubstrate9 such that fluids discharged from thenozzles50ato50dcan reach their respective target discharge positions Qa, Qb, Qc and Qd. Specifically, thegas nozzle50dis supported by thesupport part500 while being placed on an inner side of the radial direction of thesubstrate9 relative to the processingliquid nozzles50a,50band50c. The rinseliquid nozzle50cis supported by thesupport part500 while being placed on an inner side of the radial direction of thesubstrate9 relative to the chemicalliquid nozzles50aand50b. The first and secondchemical liquid nozzles50aand50bare supported by thesupport part500 while being placed in the same position in the radial direction. Thenozzles50ato50dare placed in their positions shifted from each other by an amount that is determined based on the aforementioned angle of the tiltedflow path section5042 in a manner that allows fluids to reach the corresponding target discharge positions Qa, Qb, Qc and Qd.

In thedischarge head51, the target discharge position Qd of thegas nozzle50dis on an inner side of the radial direction of thesubstrate9 relative to the respective target discharge positions Qa, Qb and Qc of the processingliquid nozzles50a,50band50c. Accordingly, in the front surfaceperipheral area911 of thesubstrate9, gas is supplied to a position inside a position where a processing liquid is discharged. In this structure, a processing liquid supplied to the front surfaceperipheral area911 can be blown away from an inner side toward an outer side of thesubstrate9 with gas. This can suppress entry of the processing liquid on the front surfaceperipheral area911 into thedevice region90. This can further stabilize the dimension of a region to be acted on by the processing liquid (such as the dimension of a region to be acted on by a chemical liquid for etching, specifically an etching width), so that this dimension can be controlled with a higher degree of accuracy.

In thedischarge head51, the target discharge position Qc of the rinseliquid nozzle50cis on an inner side of the radial direction of thesubstrate9 relative to the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50aand50brespectively. Accordingly, in the front surfaceperipheral area911 of thesubstrate9, a rinse liquid is supplied to a position closer to the inside than a position where a chemical liquid is discharged. In this structure, the chemical liquid supplied to the front surfaceperipheral area911 can be washed away from an inner side toward an outer side of thesubstrate9 with the rinse liquid. This can sufficiently suppress entry of the chemical liquid into thedevice region90 and at the same time, can wash out the chemical liquid satisfactorily without generating a residue of the chemical liquid.

In thedischarge head51, the respective target discharge positions Qa and Qb of the first and secondchemical liquid nozzles50aand50bare the same in the radial direction of thesubstrate9. Accordingly, in the front surfaceperipheral area911 of thesubstrate9, an alkaline chemical liquid can be discharged to a position where an acidic chemical liquid is discharged. This structure allows both of the chemical liquids to act on the same region accurately.

<LiquidBounce Suppressing Unit6>

By referring back toFIGS.3 to5, in thesubstrate processing apparatus1, while a processing liquid is discharged from thedischarge head51 toward the front surfaceperipheral area911 of thesubstrate9 held on thespin base21, part of the processing liquid supplied onto the front surfaceperipheral area911 may be splashed from thesubstrate9 and part of the splashed processing liquid may adhere to thesubstrate9 again after bouncing off a member placed outside, for example. The liquidbounce suppressing unit6 is a member intended to suppress re-adhesion of a processing liquid to thesubstrate9 after the processing liquid is splashed from thesubstrate9.

<i.Guard Member60>

The liquidbounce suppressing unit6 includes theguard member60. Theguard member60 is described in detail by referring toFIGS.11 to13 as well asFIGS.3 to5.FIG.11 is a perspective view of theguard member60.FIG.12 is a plan view taken from above showing a condition where thecup31, theguard member60, and thedischarge head51 are placed in their respective processing positions.FIG.13 is a side sectional view taken in a direction indicated by arrows K ofFIG.12.

Theguard member60 is a ring-shaped member extending along the entire circumference of the front surfaceperipheral area911 of thesubstrate9. While thesubstrate9 held on thespin base21 is being processed, theguard member60 as viewed from above is placed concentrically with thesubstrate9 and in a position (processing position) close to the front surfaceperipheral area911 of thesubstrate9 in a noncontact manner. It is preferable that a cross section of theguard member60 taken in a direction perpendicular to the circumferential direction of theguard member60 be rectangular and more preferably, square.

Theguard member60 has an inner diameter slightly smaller than the outer diameter of thesubstrate9. Accordingly, if theguard member60 in the processing position is viewed from above, the innercircumferential wall601 of theguard member60 is on an inner side (on the part of the center of the substrate9) relative to theend face93 of thesubstrate9. At least an inner circumferential portion of alower surface602 of theguard member60 is placed to face the front surfaceperipheral area911 of thesubstrate9 held on thespin base21. Specifically, the innercircumferential wall601 of theguard member60 is on an inner side (on the part of the center of the substrate9) relative to theend face93 of thesubstrate9 and thelower surface602 of theguard member60 partially faces the front surfaceperipheral area911 of thesubstrate9 while being in a position close to the front surfaceperipheral area911. A distance h determined in this condition between thelower surface602 of theguard member60 and thefront surface91 of thesubstrate9 held on thespin base21 is in a range of from 1 to 1.5 mm, for example.

Theguard member60 has an outer diameter larger than the outer diameter of thesubstrate9 and slightly smaller than the inner diameter of thetop edge portion301 of thecup31. Accordingly, if theguard member60 in the processing position is viewed from above, an outercircumferential wall603 of theguard member60 is outside theend face93 of thesubstrate9 and extends along the entire circumference of thetop edge portion301 of thecup31 while placed in a position close to thetop edge portion301 in a noncontact manner. Specifically, thecup31 placed in the processing position surrounds thesubstrate9 on thespin base21 and theguard member60 together.

Theaforementioned discharge head51 in the processing position is placed on the same side as the innercircumferential wall601 of the guard member60 (specifically, on a side opposite thecup31 with respect to the guard member60). In this condition, thenozzle50 of thedischarge head51 is placed on a side opposite thecup31 with respect to theguard member60. The innercircumferential wall601 of theguard member60 is given thecut605 where at least part of thedischarge head51 is housed. While thedischarge head51 is in the processing position, at least part of the discharge head51 (more specifically, at least part of thenozzle50 of thedischarge head51, for example) is housed in thecut605. Thus, thedischarge head51 is placed in the processing position above the front surfaceperipheral area911 without interfering with theguard member60. It is preferable that awall surface part6051 of thecut605 extending continuously from thelower surface602 be flush with theend face93 of thesubstrate9 or on an inner side (on the part of the center of the substrate9) relative to theend face93 as viewed from above.

While theguard member60, thedischarge head51, and thecup31 are placed in their respective processing positions, it is preferable that thelower surface602 of theguard member60 be in the same height as thedischarge surface502 of thenozzle50 of thedischarge head51 or below thedischarge surface502. Thewall surface part6051 can be in the lowest possible position that does not interfere with a path for a fluid to be discharged from thenozzle50. It is preferable that thelower surface602 of theguard member60 be in the same height as alower surface3011 of thetop edge portion301 of thecup31 or below thelower surface3011. In this preferred embodiment, thelower surface602 of theguard member60, thedischarge surface502 of thedischarge head51, and thelower surface3011 of thetop edge portion301 of thecup31 are placed in the same height. Specifically, the threesurfaces602,502 and3011 are placed in the same horizontal plane.

While theguard member60 and thecup31 are placed in their respective processing positions, it is preferable that anupper surface604 of theguard member60 be in the same height as anupper surface3012 of thetop edge portion301 of thecup31.

<ii. Reason why Re-Adhesion of Processing Liquid is Suppressed>

While a processing liquid is discharged from thedischarge head51 toward the front surfaceperipheral area911, placement of theguard member60 in the processing position can suppress re-adhesion of the processing liquid to thesubstrate9 after the processing liquid is splashed from thesubstrate9. The following describes the reason for this suppression.

Thetop edge portion301 of thecup31 has an inner diameter larger than the outer diameter of thespin base21 such that thecup31 can move to the retreat position below the upper surface of thespin base21. The outer diameter of thespin base21 is larger than the outer diameter of thesubstrate9, so that ring-shaped clearance space is formed between theend face93 of thesubstrate9 held on thespin base21 and thetop edge portion301 of thecup31 as viewed from above. Thus, clearance space V is further formed between thedischarge head51 placed in the processing position facing the front surfaceperipheral area911 of thesubstrate9 and thetop edge portion301 of thecup31. The clearance space V might be space to permit floating of mist of a processing liquid splashed from thesubstrate9, for example. However, the clearance space V is filled at least partially with part of theguard member60. This structure reduces space that might permit floating for example of mist of a processing liquid splashed from thesubstrate9 by space filled with theguard member60. This reduction of the space reduces the amount of floating of the processing liquid near thesubstrate9. This reduces the probability of re-adhesion for example of mist of the processing liquid to thesubstrate9. Specifically, this can suppress re-adhesion of part of the processing liquid to thesubstrate9 after the processing liquid is splashed from thesubstrate9.

In particular, at least part of thelower surface602 of theguard member60 is placed to face the front surfaceperipheral area911. Thus, a processing liquid splashed from thesubstrate9 is guided along thelower surface602 of theguard member60 into thecup31. This can sufficiently suppress re-adhesion of the splashed processing liquid on thesubstrate9.

In particular, thelower surface602 of theguard member60 is placed in the same height as thedischarge surface502 of thenozzle50 of thedischarge head51 or below thedischarge surface502. The present inventors confirmed that this particularly effectively acts to suppress re-adhesion of a processing liquid to the substrate9 (particularly, device region90) after the processing liquid is splashed from thesubstrate9.

The present inventors also confirmed that placing thelower surface602 of theguard member60 in the same height as thelower surface3011 of thetop edge portion301 of thecup31 or below thelower surface3011 also particularly effectively acts to suppress re-adhesion of a processing liquid to the substrate9 (particularly, device region90) after the processing liquid is splashed from thesubstrate9.

Theguard member60 is a ring-shaped member extending along the entire circumference of the front surfaceperipheral area911 of thesubstrate9. This can suppress re-adhesion of a processing liquid to thesubstrate9 throughout the circumferential direction of thesubstrate9 after the processing liquid is splashed from thesubstrate9.

<iii.Semicircular Members61 and62>

Theguard member60 is formed by making abutting contact between multiple arcuate members (here,semicircular members61 and62 in a pair) as separate members at respective end faces thereof in their circumferential directions. Specifically, thesemicircular members61 and62 in a pair are semicircular members of the same diameter.

Thesemicircular members61 and62 are placed such that their chord directions are pointed inward and their end faces in their circumferential directions face each other. Theguard member60 may be formed by making abutting contact between three or more arcuate members at respective end faces thereof in their circumferential directions.

Each of thesemicircular members61 and62 in a pair is provided with a semicircularmember drive unit63 to drive each of thesemicircular members61 and62. The semicircularmember drive unit63 includes an up-and-down drive part631 (such as a stepping motor) to move each of thesemicircular members61 and62 connected to the semicircularmember drive unit63 up and down along a vertical axis, and an advance-and-retreat drive part632 to move each of thesemicircular members61 and62 connected to the semicircularmember drive unit63 in a horizontal plane in a direction where thissemicircular member61 or62 gets closer to or farther from the other of thesemicircular members61 and62.

While thesubstrate9 is not held on thespin base21, both thesemicircular members61 and62 are placed in positions (retreat positions) outside a transport path for thesubstrate9 while being spaced from each other. More specifically, the retreat position of each of thesemicircular members61 and62 is below the upper surface of the spin base21 (specifically, a position that places theupper surface604 of each of thesemicircular members61 and62 below the upper surface of the spin base21) and outside thetop edge portion301 of thecup31 as viewed from above (position shown inFIG.3).

When thesubstrate9 is held on thespin base21, the up-and-down drive part631 moves each of thesemicircular members61 and62 in the retreat position to a position slightly above the upper surface of thespin base21. Then, the advance-and-retreat drive part632 moves each of thesemicircular members61 and62 in a horizontal plane in a direction where thissemicircular member61 or62 gets closer to the other of thesemicircular members61 and62, thereby making abutting contact between thesemicircular members61 and62 at the respective end faces thereof in their circumferential directions. As a result, the ring-shapedguard member60 is placed in the processing position.

<iv. Cleaning Process>

As described above, while thesubstrate9 is not held on thespin base21, thesemicircular members61 and62 and thecup31 are placed in their retreat positions. As described above, while thesemicircular members61 and62 and thecup31 are placed in their retreat positions, they are all placed below the upper surface of thespin base21 and thesemicircular members61 and62 are placed in positions above thecup31 and close to the upper surface of thecup31 in a noncontact manner.

In thesubstrate processing apparatus1, while thesubstrate9 is not held on thespin base21, thespin base21 is cleaned regularly (eachtime substrates9 of a given number are processed, for example) or irregularly (in response to an order from an operator, for example).

During the cleaning process on thespin base21, thespin base21 is rotated while a cleaning liquid is supplied from a cleaning nozzle (not shown in the drawings) onto the center and its vicinity of the upper surface of thespin base21 on which thesubstrate9 is not held. Then, the cleaning liquid is caused to spread throughout the upper surface of thespin base21 by centrifugal force generated as a result of rotation of thespin base21, thereby cleaning the upper surface of thespin base21 entirely. This cleaning liquid is eventually blown off from a peripheral area of thespin base21 to the outside of thespin base21. While thespin base21 is cleaned, thesemicircular members61 and62 and thecup31 are all placed in their retreat positions below the upper surface of thespin base21. Thus, the cleaning liquid blown off from the peripheral area of thespin base21 to the outside of thespin base21 reaches thecup31 and thesemicircular members61 and62 above thecup31. This cleans thecup31 and thesemicircular members61 and62. Specifically, during the cleaning process on thespin base21, thecup31 and thesemicircular members61 and62 are cleaned together as well as thespin base21.

<Heat Processing Unit7>

By referring back toFIGS.3 to5, the heat processing unit7 supplies steam (water vapor) and particularly preferably, superheated steam (superheated water vapor) to theback surface92 of thesubstrate9 held on thespin base21 to heat thesubstrate9.

The heat processing unit7 includes asteam nozzle71 from which steam is discharged toward theback surface92 of thesubstrate9 held on thespin base21. Thesteam nozzle71 is arranged on thespin base21. Thesteam nozzle71 has multiple steam discharge ports (not shown in the drawings) formed in the upper surface thereof. At least one of these steam discharge ports is formed in a position where steam is supplied selectively to the back surfaceperipheral area921 of thesubstrate9 held on thespin base21. Preferably, this steam discharge port is formed in a position facing the back surfaceperipheral area921. Steam of a larger amount can be discharged from this steam discharge port than steam discharged from the other steam discharge port. In this structure, steam from thesteam nozzle71 can be discharged intensively particularly onto the back surfaceperipheral area921 of theback surface92 of thesubstrate9.

Thesteam nozzle71 is connected to asteam supplier72 that is a pipe system to supply steam to thesteam nozzle71. As an example, the specific structure of thesteam supplier72 includes asteam source721 as a source for steam that is connected to thesteam nozzle71 through apipe722 in which an open-close valve723 is interposed. In this structure, opening the open-close valve723 discharges steam from thesteam nozzle71 supplied from thesteam source721.

It is preferable that steam to be discharged from thesteam nozzle71 be superheated steam (superheated water vapor) heated (superheated) to a sufficiently high temperature (such as one in a range of from 100° C. to 130° C., for example). This can be achieved for example by forming thesteam source721 by using a source to supply steam (water vapor) generated by heating pure water and the like, a pipe connected to the source, and a heater interposed in a path of the pipe (all of these parts are not shown in the drawings). In this case, in consideration of temperature drop of steam from the source to occur for example while the steam passes through the pipe, it is preferable that the heater heat (superheat) the steam supplied from the source to a temperature of from about 140° C. to about 160° C., for example. Even if thesubstrate9 draws heat of part of steam (superheated steam) supplied to thesubstrate9 to cool the steam so the steam condenses into droplets on thesubstrate9, these droplets are blown off from theend face93 of thesubstrate9 to the outside of thesubstrate9 by centrifugal force generated as a result of rotation of thesubstrate9. This prevents attachment of the droplets to thedevice region90.

When steam is supplied from thesteam supplier72 to thesteam nozzle71, the steam is discharged from thesteam nozzle71 toward theback surface92 of thesubstrate9 held on thespin base21, thereby heating thesubstrate9. As described above, in this preferred embodiment, steam from thesteam nozzle71 can be discharged intensively onto the back surfaceperipheral area921. Thus, the back surfaceperipheral area921 can be heated particularly intensively. The open-close valve723 of thesteam supplier72 is electrically connected to thecontroller130 and is opened and closed under control by thecontroller130. Specifically, a mode of discharge of steam from the steam nozzle71 (more specifically, timing of starting discharge, timing of finishing the discharge, and discharge flow rate, for example) is controlled by thecontroller130.

<BackSurface Processing Unit8>

The backsurface processing unit8 is to process theback surface92 of thesubstrate9 held on thespin base21. More specifically, the backsurface processing unit8 is to supply a processing liquid to theback surface92 of thesubstrate9 held on thespin base21.

The backsurface processing unit8 includes asupply pipe81 placed to pass through a hollow portion of therotary shaft part22 of thespin chuck2. The tip of thesupply pipe81 has an opening located at the upper surface of thespin base21. This opening forms a back surfaceside discharge port82.

Thesupply pipe81 is connected to aprocessing liquid supplier83 that is a pipe system to supply a processing liquid to thesupply pipe81. Theprocessing liquid supplier83 is more specifically formed by combining an SC-1source831a, aDHF source831b, an SC-2source831c, a rinseliquid source831d,multiple pipes832a,832b,832cand832d, and multiple open-close valves833a,833b,833cand833d.

The SC-1source831ais a source to supply SC-1. The SC-1source831ais connected to thesupply pipe81 through thepipe832ain which the open-close valve833ais interposed. Accordingly, opening the open-close valve833adischarges SC-1 from the back surfaceside discharge port82 supplied from the SC-1source831a.

TheDHF source831bis a source to supply DHF. TheDHF source831bis connected to thesupply pipe81 through thepipe832bin which the open-close valve833bis interposed. Accordingly, opening the open-close valve833bdischarges DHF from the back surfaceside discharge port82 supplied from theDHF source831b.

The SC-2source831cis a source to supply SC-2. The SC-2source831cis connected to thesupply pipe81 through thepipe832cin which the open-close valve833cis interposed. Accordingly, opening the open-close valve833cdischarges SC-2 from the back surfaceside discharge port82 supplied from the SC-2source831c.

The rinseliquid source831dis a source to supply a rinse liquid. The rinseliquid source831dmentioned herein supplies for example pure water (carbonated water) as a rinse liquid containing dissolved carbon dioxide (CO2). The rinseliquid source831dis connected to thesupply pipe81 through thepipe832din which the open-close valve833dis interposed. Accordingly, opening the open-close valve833ddischarges a rinse liquid from the back surfaceside discharge port82 supplied from the rinseliquid source831d. A rinse liquid to be used can be pure water, warm water, ozone water, magnetic water, regenerated water (hydrogen water), various organic solvents, ionized water, IPA (isopropyl alcohol) and functional water, for example.

If a processing liquid (SC-1, DHF, SC-2, or rinse liquid) is supplied from theprocessing liquid supplier83 to thesupply pipe81, the processing liquid is discharged from the back surfaceside discharge port82 toward the center and its vicinity of theback surface92 of thesubstrate9 held on thespin base21. The open-close valves833a,833b,833cand833dof theprocessing liquid supplier83 are each electrically connected to thecontroller130 and are opened and closed under control by thecontroller130. Specifically, a mode of discharge of a processing liquid from the back surface side discharge port82 (more specifically, type of processing liquid to be discharged, timing of starting discharge, timing of finishing the discharge, and discharge flow rate, for example) is controlled by thecontroller130.

<4. Operation ofSubstrate Processing Apparatus1>

The following describes the operation of thesubstrate processing apparatus1. Thesubstrate processing apparatus1 performs a series of processes described below under control by thecontroller130. The processes described below are merely examples of processes that can be performed by thesubstrate processing apparatus1.

In thesubstrate processing apparatus1, preparatory process (step S1), front surface peripheral process (step S2), processing surface switching process (step S3), back surface process (step S4), and drying process (step S5) are performed in the order named on onesubstrate9, for example (FIG.14). Each of the processes is described in detail below.

<4-1. Preparatory Process>

The preparatory process (step S1) is described below by referring toFIGS.15 and16.FIG.15 shows a flow of the preparatory process.FIG.16 explains the preparatory process. InFIG.16, some of the elements of thesubstrate processing apparatus1 performing each step of the preparatory process are schematically shown.

While thesemicircular members61 and62, thecup31, thedischarge head51, and thecover gas nozzle41 are placed in their respective retreat positions, the transport robot CR places thesubstrate9 on thespin base21 with thefront surface91 of thesubstrate9 pointed upward. Thesubstrate9 placed on thespin base21 is held by the group of the holding members25 (step S101). This places thesubstrate9 on thespin base21 in a substantially horizontal posture.

After thesubstrate9 is held on thespin base21, theguard member60 is moved to the processing position (step S102). More specifically, the up-and-down drive part631 of the semicircularmember drive unit63 moves each of thesemicircular members61 and62 in its retreat positions to a position slightly above the upper surface of thespin base21. Then, the advance-and-retreat drive part632 of the semicircularmember drive unit63 moves each of thesemicircular members61 and62 in a horizontal plane in a direction where thissemicircular member61 or62 gets closer to the other of thesemicircular members61 and62, thereby making abutting contact between thesemicircular members61 and62 at the respective end faces thereof in their circumferential directions. As a result, the ring-shapedguard member60 is placed in the processing position. Theguard member60 in the processing position is kept standstill without being rotated after rotation of thespin base21 is started.

When theguard member60 is placed in the processing position, thecup31 in the retreat position is then moved up to be placed in the processing position (step S103). This places thecup31 such that thecup31 surrounds thesubstrate9 held on thespin base21 and theguard member60 together.

When thecup31 is placed in the processing position, thecover gas nozzle41 is then moved from the retreat position to the processing position. Then, discharge of cover gas is started from thecover gas nozzle41 in the processing position toward the center and its vicinity of thefront surface91 of the substrate9 (step S104). Supply of the cover gas to the center and its vicinity of thefront surface91 of thesubstrate9 started in this step continues until process on thissubstrate9 is finished. Continuously supplying the cover gas to the center and its vicinity of thefront surface91 of thesubstrate9 prevents exposure of thedevice region90 for example to an atmosphere of a processing liquid supplied to the front surfaceperipheral area911 and the like while thesubstrate9 is being processed. Specifically, thedevice region90 continues to be protected from an atmosphere of a processing liquid supplied to the front surfaceperipheral area911, for example.

Here, discharge of the cover gas from thecover gas nozzle41 is started after thecup31 is placed in the processing position. It is assumed that discharge of the cover gas from thecover gas nozzle41 is started before thecup31 is moved up to the processing position. In this case, a gas flow generated near the front surfaceperipheral area911 of thesubstrate9 is disturbed to roll up, so that particles or the like might adhere to thesubstrate9. Such a situation can be prevented by the structure of starting discharge of the cover gas after thecup31 is placed in the processing position.

Next, rotation of thespin base21 is started. This starts rotation of thesubstrate9 in a horizontal posture held on the spin base21 (step S105). At this time, the frequency of rotation of the spin base21 (specifically, the frequency of rotation of the substrate9) is 600 rpm, for example. This frequency of rotation is determined appropriately such that a processing liquid supplied to the front surfaceperipheral area911 will not go into thedevice region90 or will not move toward the end face93 (specifically, such that the processing liquid will be held stably in a region to be processed inside the front surface peripheral area911) during the front surface peripheral process.

Next, steam is discharged from thesteam nozzle71 toward theback surface92 of the rotated substrate9 (pre-steaming) (step S106). After elapse of a certain time (such as five seconds) from start of discharge of the steam, discharge of the steam from thesteam nozzle71 is stopped. This pre-steaming heats thesubstrate9. Most of the chemical liquids used for processing thesubstrate9 react in an accelerated manner at a higher temperature. From this viewpoint, heating thesubstrate9 in advance by this pre-streaming accelerates reaction between a chemical liquid and thesubstrate9 during chemical liquid process. This shortens a time of the chemical liquid process and reduces the usage of a chemical liquid.

<4-2. Front Surface Peripheral Process>

When the preparatory process (step S1) is finished, the front surface peripheral process (step S2) is performed thereafter. The front surface peripheral process is described below by referring toFIGS.17 and18.FIG.17 shows a flow of the front surface peripheral process.FIG.18 explains the front surface peripheral process. InFIG.18, some of the elements of thesubstrate processing apparatus1 performing each step of the front surface peripheral process are schematically shown.

While the front surface peripheral process described below is being performed, thesubstrate9 continues to be rotated at a given frequency (such as 600 rpm). As described above, supply of the cover gas from thecover gas nozzle41 toward the center and its vicinity of thefront surface91 of thesubstrate9 continues during the front surface peripheral process. This protects thedevice region90 from an atmosphere of a processing liquid supplied to the front surfaceperipheral area911, for example.

<Alkaline Process (SC-1)>

<i. Chemical Liquid Process>

First, the front surfaceperipheral area911 of thesubstrate9 is subjected to chemical liquid process with SC-1 (step S201). More specifically, thedischarge head51 is first moved from the retreat position to the processing position. Then, SC-1 is discharged from the second chemicalliquid nozzle50bof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotatedsubstrate9. At this time, SC-1 is discharged at a rate of from 20 to 50 mL/min, for example. After elapse of a certain time (such as 20 seconds) from start of discharge of SC-1, discharge of SC-1 from thedischarge head51 is stopped.

This chemical liquid process removes a thin film formed on the front surfaceperipheral area911 of the substrate9 (etching process). During this chemical liquid process, steam is discharged from thesteam nozzle71 toward theback surface92 of thesubstrate9. During this process, the steam is discharged at a rate of from 500 to 2000 mL/min, for example. The temperature of the discharged steam is from 110° C. to 130° C., for example. For the reason that SC-1 reacts in an accelerated manner at a higher temperature, supplying the steam to thesubstrate9 to heat thesubstrate9 being subjected to the chemical liquid process with SC-1 accelerates reaction between the front surfaceperipheral area911 of thesubstrate9 and SC-1 (specifically, increases an etching rate), (what is called heat assist). This shortens a time of the chemical liquid process with SC-1 and reduces the usage of SC-1. In particular, intensively heating the back surfaceperipheral area921 of thesubstrate9 during this process can effectively accelerate reaction between the front surfaceperipheral area911 and SC-1.

<ii. Rinsing Process>

Next, rinsing process is performed (step S202). More specifically, a rinse liquid is discharged from the rinseliquid nozzle50cof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotatedsubstrate9. After elapse of a certain time (such as five seconds) from start of discharge of the rinse liquid, discharge of the rinse liquid from thedischarge head51 is stopped. This rinsing process washes out the processing liquid (here, SC-1) adhering to the front surfaceperipheral area911.

<iii. Liquid Shake-Off Process>

Next, liquid shake-off process is performed (step S203). The liquid shake-off process is performed to move a processing liquid remaining on the front surface peripheral area911 (here, the rinse liquid remaining on the front surfaceperipheral area911 for not having been shaken off from thesubstrate9 in the rinsing process in step S202) toward theend face93 of thesubstrate9 and to shake off the remaining processing liquid from theend face93 to the outside of thesubstrate9. The processing liquid moved toward theend face93 is held in a non-flat surface area including theend face93 and its neighboring area. The processing liquid held in the non-flat surface area is unlikely to be separated, so that it is shaken off collectively to the outside of thesubstrate9. Specifically, the processing liquid remaining on the front surfaceperipheral area911 is moved toward theend face93 of thesubstrate9 and then shaken off to the outside of thesubstrate9. This can remove much of the remaining processing liquid from thesubstrate9 without causing substantially no residue of the liquid on the front surfaceperipheral area911.

The following describes examples of the particulars of the liquid shake-off process. First, thesubstrate9 is rotated for a given time (liquid moving step) (step S2031) while discharge of a fluid (processing liquid and gas) from thedischarge head51 toward the front surfaceperipheral area911 is stopped. This moves the processing liquid remaining on the front surfaceperipheral area911 in a direction toward theend face93 of thesubstrate9 in response to centrifugal force generated as a result of the rotation of thesubstrate9, so that the processing liquid is held in the non-flat surface area including theend face93 and its neighboring area. Next, gas is discharged from thegas nozzle50dof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotated substrate9 (blow-away step) (step S2032). At this time, the gas is discharged at a rate of 14 L/min, for example. This shakes off the processing liquid held in the non-horizontal surface area collectively to the outside of thesubstrate9 in response to the wind pressure of the gas and centrifugal force generated as a result of the rotation of thesubstrate9. After elapse of a certain time (such as 15 seconds) from start of discharge of the gas from thedischarge head51, discharge of the gas from thedischarge head51 is stopped.

This liquid shake-off process shakes off much of the processing liquid remaining on the front surface peripheral area911 (specifically, the rinse liquid remaining on the front surfaceperipheral area911 for not having been shaken off from thesubstrate9 in the rinsing process in step S202).

<First Acidic Process (SC-2)>

<i. Chemical Liquid Process>

Next, the front surfaceperipheral area911 of thesubstrate9 is subjected to chemical liquid process with SC-2 (step S204). More specifically, SC-2 is discharged from the first chemicalliquid nozzle50aof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotatedsubstrate9. After elapse of a certain time (such as 20 seconds) from start of discharge of SC-2, discharge of SC-2 from thedischarge head51 is stopped.

This chemical liquid process removes a metallic composition (such as Mo or Co) and the like adhering to the front surfaceperipheral area911 of the substrate9 (cleaning process). This chemical liquid process is performed after the liquid shake-off process (step S203). Accordingly, SC-2 is discharged toward the front surfaceperipheral area911 on which substantially no rinse liquid remains. It is assumed that this chemical liquid process is performed without the presence of the liquid shake-off process in step S203. In this case, SC-2 is discharged toward the front surfaceperipheral area911 on which the rinse liquid remains. Hence, the discharged SC-2 might collide with the remaining rinse liquid to bounce into thedevice region90. However, in this chemical liquid process, substantially no rinse liquid remains on the front surfaceperipheral area911 as a result of the presence of the liquid shake-off process, making entry of a processing liquid into thedevice region90 unlikely due to the aforementioned collision between processing liquids. It is assumed that the liquid shake-off process in step S203 is absent. In this case, the rinse liquid remaining on the front surfaceperipheral area911 and the supplied SC-2 might mix with each other. Meanwhile, the presence of the liquid shake-off process makes occurrence of such a situation unlikely. This allows SC-2 of a desired concentration to act appropriately on the front surfaceperipheral area911. This can also prevent contamination between the rinse liquid having been used for washing out SC-1 as an alkaline chemical liquid and SC-2 as an acidic chemical liquid.

<ii. Liquid Shake-Off Process>

Next, liquid shake-off process is performed (step S205). A specific flow of this liquid shake-off process is the same as that of step S203. Specifically, thesubstrate9 is rotated for a given time (liquid moving step) while discharge of a fluid toward the front surfaceperipheral area911 is stopped. Next, gas is discharged from thegas nozzle50dof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotated substrate9 (blow-away step). After elapse of a certain time (such as 15 seconds) from start of discharge of the gas from thedischarge head51, discharge of the gas from thedischarge head51 is stopped.

This liquid shake-off process shakes off much of the processing liquid remaining on the front surface peripheral area911 (specifically, SC-2 remaining on the front surfaceperipheral area911 for not having been shaken off from thesubstrate9 in the cleaning process in step S204). Impurities such as the metallic composition removed from thesubstrate9 by the cleaning process are left in SC-2 remaining on the front surfaceperipheral area911 for not having been shaken off from thesubstrate9 in the cleaning process in step S204. Meanwhile, the liquid shake-off process performed after the cleaning process shakes off these impurities at an early stage from thesubstrate9. This reduces the risk of re-adhesion of the impurities to thesubstrate9 after the impurities are removed from thesubstrate9 during the chemical liquid process with SC-2.

<iii. Rinsing Process>

Next, rinsing process is performed (step S206). A specific flow of this rinsing process is the same as that of step S202. Specifically, a rinse liquid is discharged from the rinseliquid nozzle50cof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotatedsubstrate9. After elapse of a certain time (such as five seconds) from start of discharge of the rinse liquid, discharge of the rinse liquid from thedischarge head51 is stopped.

This rinsing process washes out the processing liquid (here, SC-2) adhering to the front surfaceperipheral area911. This rinsing process is performed after the liquid shake-off process (step S205). Accordingly, substantially no SC-2 remains on the front surfaceperipheral area911. This shortens a time of the rinsing process, compared to the case where the liquid shake-off process is absent. In this rinsing process, the rinse liquid is discharged toward the front surfaceperipheral area911 on which substantially no SC-2 remains, making entry of a processing liquid into thedevice region90 unlikely due to collision between processing liquids.

<iv. Liquid Shake-Off Process>

Next, liquid shake-off process is performed (step S207). A specific flow of this liquid shake-off process is the same as that of step S203. Specifically, thesubstrate9 is rotated for a given time (liquid moving step) while discharge of a fluid toward the front surfaceperipheral area911 is stopped. Next, gas is discharged from thegas nozzle50dof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotated substrate9 (blow-away step). After elapse of a certain time (such as 15 seconds) from start of discharge of the gas from thedischarge head51, discharge of the gas from thedischarge head51 is stopped.

This liquid shake-off process shakes off much of the processing liquid remaining on the front surface peripheral area911 (specifically, the rinse liquid remaining on the front surfaceperipheral area911 for not having been shaken off from thesubstrate9 in the rinsing process in step S206).

<Second Acidic Process (DHF)>

<i. Chemical Liquid Process>

Next, the front surfaceperipheral area911 of thesubstrate9 is subjected to chemical liquid process with DHF (step S208). More specifically, DHF is discharged from the first chemicalliquid nozzle50aof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotatedsubstrate9. At this time, DHF is discharged at a rate of from 20 to 50 mL/min, for example. After elapse of a certain time (such as 10 seconds) from start of discharge of DHF, discharge of DHF from thedischarge head51 is stopped.

This chemical liquid process removes a thin film formed on the front surfaceperipheral area911 of the substrate9 (etching process). This chemical liquid process is performed after the liquid shake-off process (step S207). Accordingly, DHF is discharged toward the front surfaceperipheral area911 on which substantially no rinse liquid remains, making entry of a processing liquid into thedevice region90 unlikely due to collision between processing liquids. Additionally, DHF and the rinse liquid will not mix with each other on the front surfaceperipheral area911. This allows DHF of a desired concentration to act appropriately on the front surfaceperipheral area911.

During this chemical liquid process, gas is discharged from thegas nozzle50dof thedischarge head51 toward the front surfaceperipheral area911. At this time, the gas is discharged at a rate of 14 L/min, for example. Specifically, in each position within the front surfaceperipheral area911, old DHF (having been supplied from the first chemicalliquid nozzle50abefore one rotation of thesubstrate9 and not having been shaken off during this rotation) is removed with the gas discharged from thegas nozzle50d. Then, new DHF is supplied to this position from the first chemicalliquid nozzle50a. As described above, this structure can suppress entry of a processing liquid into thedevice region90 due to collision between an old processing liquid not having been shaken off during one rotation of thesubstrate9 and a newly supplied processing liquid. This structure further allows thesubstrate9 to be always acted on by fresh DHF, thereby enhancing processing efficiency. This structure also prevents a situation where DHF temporarily remains in large amount in each position within the front surfaceperipheral area911. This can stabilize an etching width, so that the etching width can be controlled with a higher degree of accuracy. Supplying DHF makes the front surfaceperipheral area911 water repellent, so that an old processing liquid held on the front surfaceperipheral area911 may become thick partially. If a new processing liquid is supplied in this condition, the processing liquid may be repelled to bounce easily. In response, an old processing liquid is blown away toward an outer side of thesubstrate9 with the gas discharged from thegas nozzle50d. This sufficiently suppresses entry of droplets of this old processing liquid or the like into thedevice region90.

<ii. Rinsing Process>

Next, rinsing process is performed (step S209). A specific flow of this rinsing process is the same as that of step S202. Specifically, a rinse liquid is discharged from the rinseliquid nozzle50cof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotatedsubstrate9. After elapse of a certain time (such as five seconds) from start of discharge of the rinse liquid, discharge of the rinse liquid from thedischarge head51 is stopped.

This rinsing process washes out the processing liquid (here, DHF) adhering to the front surfaceperipheral area911. During this rinsing process, gas is discharged from thegas nozzle50dof thedischarge head51 toward the front surfaceperipheral area911 of thesubstrate9. At this time, the gas is discharged at a rate of 14 L/min, for example. Specifically, in each position within the front surfaceperipheral area911, an old rinse liquid (having been supplied from the rinseliquid nozzle50cbefore one rotation of thesubstrate9 and not having been shaken off during this rotation) is removed with the gas discharged from thegas nozzle50d. Then, a new rinse liquid is supplied to this position from the rinseliquid nozzle50c. As described above, this structure can suppress entry of a processing liquid into thedevice region90 due to collision between an old processing liquid not having been shaken off during one rotation of thesubstrate9 and a newly supplied processing liquid. This structure removes an old rinse liquid containing DHF readily from the front surfaceperipheral area911 and allows thesubstrate9 to be acted on by a new rinse liquid not containing DHF, thereby enhancing efficiency of the rinsing process. In this structure, as described above, droplets of a processing liquid or the like repelled by the front surfaceperipheral area911 are blown off toward an outer side of thesubstrate9 with a flow of the gas discharged from thegas nozzle50d, so that entry of these droplets or the like into thedevice region90 is suppressed sufficiently.

<iii. Liquid Shake-Off Process>

Next, liquid shake-off process is performed (step S210). A specific flow of this liquid shake-off process is the same as that of step S203. Specifically, thesubstrate9 is rotated for a given time (liquid moving step) while discharge of a fluid toward the front surfaceperipheral area911 is stopped. Next, gas is discharged from thegas nozzle50dof thedischarge head51 in the processing position toward the front surfaceperipheral area911 of the rotated substrate9 (blow-away step). After elapse of a certain time (such as five seconds) from start of discharge of the gas from thedischarge head51, discharge of the gas from thedischarge head51 is stopped.

This liquid shake-off process shakes off much of the processing liquid remaining on the front surface peripheral area911 (specifically, the rinse liquid remaining on the front surfaceperipheral area911 for not having been shaken off from thesubstrate9 in the rinsing process in step S209).

<4-3. Processing Surface Switching Process>

When the front surface peripheral process (step S2) is finished, the processing surface switching process (step S3) is performed thereafter. In the processing surface switching process, in preparation for the back surface process (step S4), the rotation speed of the spin base21 (specifically, the rotation speed of the substrate9) is reduced (lowered) (seeFIGS.19 and20). Specifically, the rotation speed of thespin base21 is changed from the speed applied during the front surface peripheral process to a rotation speed lower than this speed (low rotation speed). More specifically, the frequency of rotation of thespin base21 is changed from 600 rpm applied during the front surface peripheral process to a sufficiently lower frequency of rotation (such as 20 rpm). As described above, during the processing surface switching process, supply of the cover gas continues from thecover gas nozzle41 toward the center and its vicinity of thefront surface91 of thesubstrate9.

<4-4. Back Surface Process>

When the processing surface switching process (step S3) is finished, the back surface process (step S4) is performed thereafter. The back surface process is described below by referring toFIGS.19 and20.FIG.19 shows a flow of the back surface process.FIG.20 explains the back surface process. InFIG.20, some of the elements of thesubstrate processing apparatus1 performing each step of the back surface process are schematically shown.

As described above, supply of the cover gas continues from thecover gas nozzle41 toward the center and its vicinity of thefront surface91 of thesubstrate9 during the back surface process. This protects thedevice region90 from an atmosphere of a processing liquid supplied to theback surface92, for example.

Before a processing liquid is supplied to theback surface92, the rotation speed of thespin base21 is reduced to 20 rpm applied as a low frequency of rotation. The “low rotation speed” mentioned herein is a speed that makes a processing liquid supplied to theback surface92 of thesubstrate9 spread throughout theback surface92 and prevents the processing liquid from reaching thefront surface91 of thesubstrate9 while thesubstrate9 is rotated at this rotation speed. This “low rotation speed” more specifically corresponds to a frequency of rotation of 20 rpm or less, for example.

First, theback surface92 of thesubstrate9 is subjected to chemical liquid process with SC-1 (step S401). More specifically, SC-1 is discharged from the back surfaceside discharge port82 toward the center and its vicinity of theback surface92 of thesubstrate9 rotated at the low speed. At this time, SC-1 is discharged at a rate of from 500 to 2000 mL/min, for example. Centrifugal force generated as a result of rotation of thesubstrate9 makes SC-1 supplied to the center and its vicinity of theback surface92 spread throughout theback surface92, so that the chemical liquid process with SC-1 proceeds on theback surface92 of thesubstrate9. This chemical liquid process with SC-1 removes a thin film formed on theback surface92 of the substrate9 (etching process). After elapse of a certain time (such as 20 seconds) from start of discharge of SC-1, discharge of SC-1 from the back surfaceside discharge port82 is stopped.

Next, rinsing process is performed (step S402). More specifically, while thesubstrate9 continues to be rotated at the low speed, a rinse liquid is discharged from the back surfaceside discharge port82 toward the center and its vicinity of theback surface92 of thesubstrate9. Centrifugal force generated as a result of rotation of thesubstrate9 makes the rinse liquid supplied to the center and its vicinity of theback surface92 spread throughout theback surface92, thereby washing out the processing liquid (here, SC-1) adhering to theback surface92. After elapse of a certain time (such as 20 seconds) from start of discharge of the rinse liquid, discharge of the rinse liquid from the back surfaceside discharge port82 is stopped.

Next, theback surface92 of thesubstrate9 is subjected to chemical liquid process with SC-2 (step S403). More specifically, while thesubstrate9 continues to be rotated at the low speed, SC-2 is discharged from the back surfaceside discharge port82 toward the center and its vicinity of theback surface92 of thesubstrate9. Centrifugal force generated as a result of rotation of thesubstrate9 makes SC-2 supplied to the center and its vicinity of theback surface92 spread throughout theback surface92, so that the chemical liquid process with SC-2 proceeds on theback surface92. This chemical liquid process with SC-2 removes a metallic composition (such as Mo or Co) and the like adhering to theback surface92 of the substrate9 (cleaning process). After elapse of a certain time (such as 20 seconds) from start of discharge of SC-2, discharge of SC-2 from the back surfaceside discharge port82 is stopped.

Next, rinsing process is performed (step S404). A specific flow of this rinsing process is the same as that of step S402. Specifically, while thesubstrate9 continues to be rotated at the low speed, a rinse liquid is discharged from the back surfaceside discharge port82 toward the center and its vicinity of theback surface92 of thesubstrate9. Centrifugal force generated as a result of rotation of thesubstrate9 makes the rinse liquid supplied to the center and its vicinity of theback surface92 spread throughout theback surface92, thereby washing out the processing liquid (here, SC-2) adhering to theback surface92. After elapse of a certain time (such as 20 seconds) from start of discharge of the rinse liquid, discharge of the rinse liquid from the back surfaceside discharge port82 is stopped.

Next, theback surface92 of thesubstrate9 is subjected to chemical liquid process with DHF (step S405). More specifically, while thesubstrate9 continues to be rotated at the low speed, DHF is discharged from the back surfaceside discharge port82 toward the center and its vicinity of theback surface92 of thesubstrate9. At this time, DHF is discharged at a rate of from 500 to 2000 mL/min, for example. Centrifugal force generated as a result of rotation of thesubstrate9 makes DHF supplied to the center and its vicinity of theback surface92 spread throughout theback surface92, so that the chemical liquid process with DHF proceeds on theback surface92. This chemical liquid process with DHF removes a thin film formed on theback surface92 of the substrate9 (etching process). After elapse of a certain time (such as 10 seconds) from start of discharge of DHF, discharge of DHF from the back surfaceside discharge port82 is stopped.

Next, rinsing process is performed (step S406). A specific flow of this rinsing process is the same as that of step S402. Specifically, while thesubstrate9 continues to be rotated at the low speed, a rinse liquid is discharged from the back surfaceside discharge port82 toward the center and its vicinity of theback surface92 of thesubstrate9. Centrifugal force generated as a result of rotation of thesubstrate9 makes the rinse liquid supplied to the center and its vicinity of theback surface92 spread throughout theback surface92, thereby washing out the processing liquid (here, DHF) adhering to theback surface92. After elapse of a certain time (such as 22.5 seconds) from start of discharge of the rinse liquid, discharge of the rinse liquid from the back surfaceside discharge port82 is stopped. Then, the back surface process is completed.

<4-5. Drying Process>

When the back surface process (step S4) is finished, the drying process (step S5) is performed thereafter. In the drying process, while discharge of a processing liquid toward thesubstrate9 is stopped, the rotation speed of the spin base21 (specifically, the rotation speed of the substrate9) is increased from the low rotation speed applied during the back surface process to a relatively high rotation speed for drying (seeFIGS.19 and20). This shakes off the rinse liquid gradually adhering to theback surface92 of thesubstrate9 to eventually dry thesubstrate9. As described above, supply of the cover gas from thecover gas nozzle41 toward the center and its vicinity of thefront surface91 of thesubstrate9 continues during the drying process. This protects thedevice region90 from an atmosphere of a processing liquid, for example.

After elapse of a certain time from start of rotation of thesubstrate9 at the speed for drying, rotation of thespin base21 is stopped. Then, discharge of the gas from thecover gas nozzle41 is stopped and thecover gas nozzle41 is moved to the retreat position. Further, thedischarge head51, thecup31, and thesemicircular members61 and62 are moved to their respective retreat positions. Then, the group of the holdingmembers25 releases thesubstrate9 and the transport robot CR takes thesubstrate9 out of thesubstrate processing apparatus1. Then, the series of processes on thesubstrate9 is completed.

<5. Effects>

In the aforementioned preferred embodiment, thegas nozzle50dis placed upstream of the rotative direction AR9 of thesubstrate9 relative to the processingliquid nozzles50a,50band50c. In this structure, an old processing liquid having been supplied from the processingliquid nozzle50a,50bor50cbefore one rotation of thesubstrate9 and not having been shaken off during this rotation is removed with gas discharged from thegas nozzle50d. Then, new processing liquids can be supplied from the processingliquid nozzles50a,50band50cto each position within the front surfaceperipheral area911. This makes the occurrence of a situation unlikely where a newly supplied processing liquid collides with an old processing liquid on the front surfaceperipheral area911 to bounce. This suppresses entry of a processing liquid having been used for processing the front surfaceperipheral area911 into thedevice region90.

In the aforementioned preferred embodiment, in the front surfaceperipheral area911 of thesubstrate9, gas is supplied to a position on an inner side (on the part of the center of the substrate9) relative to a position where a processing liquid is discharged. In this structure, the processing liquid supplied to the front surfaceperipheral area911 can be removed with gas in a direction from the center of thesubstrate9 toward theend face93. This can suppress entry of the processing liquid on the front surfaceperipheral area911 into thedevice region90.

In the aforementioned preferred embodiment, thechemical liquid nozzles50aand50bfrom which chemical liquids are discharged and the rinseliquid nozzle50cfrom which a rinse liquid is discharged are supported integrally. This structure simplifies the structure of the apparatus and can adjust the positions of thenozzles50a,50band50crelative to each other easily, compared to the case where thenozzles50a,50band50care supported separately.

In the aforementioned preferred embodiment, in the front surfaceperipheral area911 of thesubstrate9, a rinse liquid is discharged to a position on an inner side (on the part of the center of the substrate9) relative to a position where a chemical liquid is discharged. In this structure, the chemical liquid supplied to the front surfaceperipheral area911 can be washed away with the rinse liquid in a direction from the center of thesubstrate9 toward theend face93. This can wash out the chemical liquid satisfactorily while suppressing entry of the chemical liquid into thedevice region90 sufficiently. In the aforementioned preferred embodiment, the rinseliquid nozzle50cfrom which a rinse liquid is discharged is placed between the first chemicalliquid nozzle50afrom which an acidic chemical liquid is discharged and the second chemicalliquid nozzle50bfrom which an alkaline chemical liquid is discharged. This structure can suppress the occurrence of a situation where an atmosphere generated during discharge of a chemical liquid from one of the chemical liquid nozzles reacts with a chemical liquid remaining inside of the other chemical liquid nozzle, for example.

In the aforementioned preferred embodiment, the target discharge position Qa of the first chemicalliquid nozzle50aand the target discharge position Qb of the second chemicalliquid nozzle50bare spaced by the same distance from theend face93 of thesubstrate9. Thus, in the front surfaceperipheral area911 of thesubstrate9, an alkaline chemical liquid can be discharged to a position where an acidic chemical liquid is discharged. This structure allows both of these chemical liquids to act on the same region accurately.

In the aforementioned preferred embodiment, the flow path formed inside thenozzle body501 includes the tiltedflow path section5042 extending obliquely downward such that the tiltedflow path section5042 gets farther in a lower position in a direction from the center of thesubstrate9 toward theend face93 to communicate with a discharge port at a lower end of the tiltedflow path section5042. This structure allows a fluid discharged from thenozzle50 toward the front surfaceperipheral area911 of thesubstrate9 to flow in the front surfaceperipheral area911 of thesubstrate9 toward an outer side of thesubstrate9.

In the aforementioned preferred embodiment, processing liquids are discharged from the processingliquid nozzles50a,50band50ctoward the front surfaceperipheral area911 of a rotatedsubstrate9 while gas is discharged toward the front surfaceperipheral area911 from thegas nozzle50dplaced upstream of the rotative direction AR9 of thesubstrate9 relative to the processingliquid nozzles50a,50band50c(steps S208 and209). In this structure, an old processing liquid having been supplied from the processingliquid nozzle50a,50bor50cbefore one rotation of thesubstrate9 and not having been shaken off during this rotation is removed with gas discharged from thegas nozzle50d. Then, new processing liquids can be supplied from the processingliquid nozzles50a,50band50cto each position within the front surfaceperipheral area911. This makes the occurrence of a situation unlikely where a newly supplied processing liquid collides with an old processing liquid on the front surfaceperipheral area911 to bounce. This suppresses entry of a processing liquid having been used for processing the front surfaceperipheral area911 into thedevice region90.

In the aforementioned preferred embodiment, a processing liquid remaining on the front surfaceperipheral area911 is moved toward theend face93 of thesubstrate9 and then shaken off to the outside of the substrate9 (liquid shake-off process). In this structure, a processing liquid (second processing liquid) supplied to the front surfaceperipheral area911 after the liquid shake-off process is discharged toward the front surfaceperipheral area911 on which substantially no processing liquid (first processing liquid) remains having been supplied to the front surfaceperipheral area911 before the liquid shake-off process. This makes the occurrence of a situation unlikely where a discharged processing liquid collides with a processing liquid remaining on the front surfaceperipheral area911 to bounce. This suppresses entry of a processing liquid into thedevice region90.

In the aforementioned preferred embodiment, the liquid shake-off process includes a step of rotating thesubstrate9 and a step of discharging gas toward the front surfaceperipheral area911 of thesubstrate9 that are performed while discharge of a fluid to the front surfaceperipheral area911 is stopped. This structure can shake off the first processing liquid remaining on the front surfaceperipheral area911 satisfactorily in a short time.

In the aforementioned preferred embodiment, cover gas is discharged toward the center and its vicinity of thefront surface91 of thesubstrate9. This protects thedevice region90 from an atmosphere of a processing liquid and the like supplied to the front surfaceperipheral area911, for example.

In the aforementioned preferred embodiment, while discharge of a fluid from thedischarge head51 is stopped, thesubstrate9 is rotated for a given time before discharge of the first processing liquid is stopped and after discharge of the second processing liquid is started. Then, gas is discharged toward the front surfaceperipheral area911 of thesubstrate9. In this structure, the second processing liquid is discharged toward the front surfaceperipheral area911 on which substantially no first processing liquid remains. This makes the occurrence of a situation unlikely where a discharged processing liquid collides with a processing liquid remaining on the front surfaceperipheral area911 to bounce. This suppresses entry of a processing liquid into thedevice region90.

<6. Modifications of Liquid Shake-Off Process>

<6-1. First Modification of Liquid Shake-Off Process>

In the aforementioned preferred embodiment, the rotation speed of the spin base21 (specifically, the rotation speed of the substrate9) can be increased so as to coincide with start of the liquid shake-off process (steps S203, S205, S207 and S210) (specifically, to coincide with start of the liquid moving step). More specifically, the rotation speed of thespin base21 can be changed from a rotation speed to a second rotation speed higher than the first rotation speed so as to coincide with start of the liquid shake-off process. In this case, the rotation speed of thespin base21 is changed from the second rotation speed to the first rotation speed simultaneously with finish of the liquid shake-off process.

In the first modification, the rotation speed of thesubstrate9 applied during the liquid shake-off process is higher than that of thesubstrate9 applied during processes performed before and after this liquid shake-off process (processes of discharging processing liquids toward the front surface peripheral area911).

In the first modification, thesubstrate9 is rotated at a relatively high speed during the liquid shake-off process. Thus, the first processing liquid (which is a rinse liquid regarding steps S203, S207 and S210, and SC-2 regarding step S205) remaining on the front surfaceperipheral area911 is moved readily toward theend face93 of thesubstrate9 and is shaken off satisfactorily from thesubstrate9. Hence, in this structure, the first processing liquid remaining on the front surfaceperipheral area911 can be shaken off within a particularly short time.

The rotation speed of thespin base21 can be changed from the first rotation speed to the second rotation speed higher than the first rotation speed so as to coincide with start of the liquid shake-off process. Then, the rotation speed of thespin base21 can be changed from the second rotation speed to the default first rotation speed simultaneously with finish of the liquid moving step in the liquid shake-off process (specifically, simultaneously with start of the blow-away step). In this case, the rotation speed of thesubstrate9 applied during the liquid moving step is higher than that of thesubstrate9 applied during processes performed before and after this liquid moving step, so that the first processing liquid remaining on the front surfaceperipheral area911 is moved readily toward theend face93 of thesubstrate9. This structure can also shake off the first processing liquid remaining on the front surfaceperipheral area911 within a short time.

<6-2. Second Modification of Liquid Shake-Off Process>

In the aforementioned preferred embodiment or the first modification, the amount of discharge of cover gas from thecover gas nozzle41 can be increased so as to coincide with start of the liquid shake-off process (steps S203, S205, S207 and S210) (specifically, to coincide with start of the liquid moving step). More specifically, the amount of discharge of the cover gas can be changed from a first amount to a second amount larger than the first amount so as to coincide with start of the liquid shake-off process. In this case, the amount of discharge of the cover gas is changed from the second amount to the default first amount simultaneously with finish of the liquid shake-off process.

In the second modification, the amount of discharge of the cover gas applied during the liquid shake-off process is larger than that applied during processes performed before and after this liquid shake-off process (processes of discharging processing liquids toward the front surface peripheral area911).

In the second modification, the cover gas of a relatively large amount is discharged toward the center and its vicinity of thefront surface91 of thesubstrate9 during the liquid shake-off process. Thus, thedevice region90 can be protected sufficiently for example from an atmosphere of a processing liquid during the liquid shake-off process. Further, the wind pressure of the cover gas moves a processing liquid satisfactorily toward theend face93 of thesubstrate9.

The amount of discharge of the cover gas can be changed from the first amount to the second amount larger than the first amount so as to coincide with start of the liquid shake-off process. Then, the amount of discharge of the cover gas can be changed from the second amount to the default first amount simultaneously with finish of the liquid moving step in the liquid shake-off process. In this case, the amount of discharge of the cover gas applied during the liquid moving step is larger than that applied during processes performed before and after this liquid moving step. Thus, thedevice region90 is protected sufficiently from an atmosphere of a processing liquid during the liquid moving step. Further, the wind pressure of the cover gas moves a processing liquid satisfactorily toward theend face93 of thesubstrate9.

<7. Modification of Discharge Head for Peripheral Area>

Adischarge head51afor peripheral area according to a different preferred embodiment is described below by referring toFIG.21.FIG.21 shows thedischarge head51aas viewed from below. In the following, structures same as those of the aforementioned preferred embodiment are identified by the same signs and will not be described repeatedly.

<i. Overall Structure>

Thedischarge head51aincludes multiple (here, five)nozzles50a,50b,50c,50mand50n, and asupport part500athat supports these nozzles integrally. Thenozzles50a,50b,50c,50mand50nin a group of thedischarge head51ainclude three processingliquid nozzles50a,50band50csame as those of the aforementioned preferred embodiment (more specifically, the first chemicalliquid nozzle50afrom which an acidic chemical liquid is discharged, the second chemicalliquid nozzle50bfrom which an alkaline chemical liquid is discharged, and the rinseliquid nozzle50cfrom which a rinse liquid is discharged). Thenozzles50a,50b,50c,50mand50nin a group of thedischarge head51afurther include the nozzle (box nozzle)50mfrom which gas (here, nitrogen gas) and steam (particularly preferably, superheated steam) are discharged toward the front surfaceperipheral area911, and the nozzle (inner gas nozzle)50nfrom which gas (here, nitrogen gas) is discharged toward the front surfaceperipheral area911.

<ii.Box Nozzle50m>

The following describes thebox nozzle50m. Thebox nozzle50mincludes anozzle body501mhaving an outer shape of a rectangular parallelepiped. Thenozzle body501mis supported by thesupport part500asuch that a lower surface (discharge surface)502mof thenozzle body501mis placed in a horizontal posture. Accordingly, while thedischarge head51ais placed in a processing position, thedischarge surface502mis placed in a posture parallel to thefront surface91 of thesubstrate9 held on thespin base21 and is close to the front surfaceperipheral area911 in a noncontact manner.

Multiplegas discharge ports506 are formed in thedischarge surface502mthat are arranged along an arcuate virtual line (first virtual line) extending along the front surfaceperipheral area911. Multiplesteam discharge ports507 are further formed in thedischarge surface502mthat are arranged along an arcuate virtual line (second virtual line) extending along the front surfaceperipheral area911. The first virtual line along which thegas discharge ports506 are arranged is on an inner side of the substrate9 (on the part of the center of the substrate9) relative to the second virtual line along which thesteam discharge ports507 are arranged. Specifically, thegas discharge ports506 are arranged on an inner side of thesubstrate9 relative to thesteam discharge ports507.

A gas flow path is formed inside thenozzle body501m. The gas flow path has a lower end communicating with thegas discharge ports506. The gas flow path is connected to one of branched end portions of abranch pipe552e. An end portion of an unbranched part of thebranch pipe552eis connected to a source (gas source) for gas (such as nitrogen gas)551e. An open-close valve553eis interposed in thebranch pipe552e. Accordingly, opening the open-close valve553edischarges gas from thegas discharge ports506 that is supplied from thebranch pipe552ethrough the gas flow path inside thenozzle body501m. Like the aforementioned flow path formed inside the nozzle body501 (FIG.7), it is preferable that this gas flow path have a tilted flow path section extending obliquely downward such that the tilted flow path section gets farther in a lower position from an inner side of the substrate9 (on the part of the center of the substrate9) toward an outer side of the substrate9 (on the part of the end face93) to communicate with thegas discharge ports506 at a lower end of the tilted flow path section.

A steam flow path is further formed inside thenozzle body501m. The steam flow path has a lower end communicating with thesteam discharge ports507. The steam flow path is connected to one end of apipe552f. The other end of thepipe552fis connected to a source for steam (steam source)551f. An open-close valve553fis interposed in thepipe552f. Accordingly, opening the open-close valve553fdischarges steam from thegas discharge ports507 that is supplied from thepipe552fthrough the steam flow path inside thenozzle body501m. It is preferable that the steam to be discharged from thesteam discharge ports507 be superheated steam (superheated water vapor) heated (superheated) to a sufficiently high temperature (such as one in a range of from 100° C. to 130° C., for example). As described above, this can be achieved for example by forming thesteam source551fby using a source to supply steam (water vapor) generated by heating pure water and the like, a pipe connected to the source, and a heater interposed in a path of the pipe (all of these parts are not shown in the drawings). Like the aforementioned flow path formed inside thenozzle body501, it is preferable that this steam flow path have a tilted flow path section extending obliquely downward such that the tilted flow path section gets farther in a lower position from an inner side of the substrate9 (on the part of the center of the substrate9) toward an outer side of the substrate9 (on the part of the end face93) to communicate with thesteam discharge ports507 at a lower end of the tilted flow path section.

<iii.Inner Gas Nozzle50n>

Theinner gas nozzle50nis described next. Theinner gas nozzle50nincludes anozzle body501nhaving an outer shape curved in an arcuate pattern along the front surfaceperipheral area911 as viewed from above. Thenozzle body501nis supported by thesupport part500asuch that a lower surface (discharge surface)502nof thenozzle body501nis placed in a horizontal posture. Accordingly, while thedischarge head51ais placed in the processing position, thedischarge surface502nis placed in a posture parallel to thefront surface91 of thesubstrate9 held on thespin base21 and is close to the front surfaceperipheral area911 in a noncontact manner.

Multiple innergas discharge ports508 are formed in thedischarge surface502nthat are arranged along an arcuate virtual line extending along the front surfaceperipheral area911.

A flow path is formed inside thenozzle body501n. The flow path has a lower end communicating with the innergas discharge ports508. The flow path is connected to the other of the branched end portions of thebranch pipe552e. Accordingly, opening the open-close valve553edischarges gas from the innergas discharge ports508 that is supplied from thebranch pipe552ethrough the flow path inside thenozzle body501n. Like the aforementioned flow path formed inside thenozzle body501, it is preferable that this flow path have a tilted flow path section extending obliquely downward such that the tilted flow path section gets farther in a lower position from an inner side of the substrate9 (on the part of the center of the substrate9) toward an outer side of the substrate9 (on the part of the end face93) to communicate with the innergas discharge ports508 at a lower end of the tilted flow path section.

<iv. Arrangement of Each Nozzle>

Thesupport part500athat integrally supports the three processingliquid nozzles50a,50band50c, thebox nozzle50m, and theinner gas nozzle50n, is fixed to thearm52. Thesupport part500ais a member curving in an arcuate pattern along the front surfaceperipheral area911 as viewed from above. The three processingliquid nozzles50a,50band50c, and thebox nozzle50mare aligned in a direction where thesupport part500acurved in an arcuate pattern extends. Accordingly, while thedischarge head51ais placed in the processing position, the three processingliquid nozzles50a,50band50c, and thebox nozzle50m, are arranged along the front surfaceperipheral area911 of thesubstrate9. In this condition, thebox nozzle50m, the first chemicalliquid nozzle50a, the rinseliquid nozzle50c, and the second chemicalliquid nozzle50bare arranged in the rotative direction AR9 of thesubstrate9 in the order named as viewed from an upstream side of the rotative direction AR9. Theinner gas nozzle50nis arranged on an inner side of the substrate9 (on the part of the center of the substrate9) relative to the three processingliquid nozzles50a,50band50c.

Specifically, in thedischarge head51a, thebox nozzle50mis placed upstream of the rotative direction AR9 of thesubstrate9 relative to the processingliquid nozzles50a,50band50c. Thus, in thesubstrate9 to be rotated, each position within the front surfaceperipheral area911 of thesubstrate9 first passes through a place below thebox nozzle50mand then passes through places below the processingliquid nozzles50a,50band50c. In this structure, before being supplied with a new processing liquid from the processingliquid nozzle50a,50bor50c, each position within the front surfaceperipheral area911 of the rotatedsubstrate9 can be supplied with gas, steam, or both gas and steam from thebox nozzle50m.

In this structure, an old processing liquid adhering to each position within the front surfaceperipheral area911 is removed with gas discharged from thebox nozzle50m. Then, new processing liquids can be supplied from the processingliquid nozzles50a,50band50cto this position. As described above, this can suppress entry of a processing liquid into thedevice region90 due to collision between an old processing liquid not having been shaken off and a newly supplied processing liquid. Further, this structure allows thesubstrate9 to be always acted on by a fresh processing liquid, thereby enhancing processing efficiency. This structure also prevents a situation where a processing liquid temporarily remains in large amount in each position within the front surfaceperipheral area911. This can stabilize the dimension of a region to be acted on by a processing liquid.

In this structure, a new chemical liquid can be supplied from the chemicalliquid nozzle50aor50bto each position within the front surfaceperipheral area911 immediately after this position is heated with steam. Thus, reaction between the front surfaceperipheral area911 and the chemical liquid can be accelerated (what is called heat assist). This can shorten a time of chemical liquid process and reduces the usage of the chemical liquid.

Under control by thecontroller130, timing of discharge of steam from thedischarge head51ais determined according to a recipe, for example. As an example, while the front surfaceperipheral area911 is subjected to chemical liquid process with SC-1 (step S201), steam may be discharged from thebox nozzle50mof thedischarge head51atoward the front surfaceperipheral area911 of thesubstrate9. It is preferable that during this process, the steam be discharged at a rate for example of 2000 mL/min. It is also preferable that gas be discharged further from thebox nozzle50mwhile the steam is discharged from thebox nozzle50m. In this structure, even if part of the steam supplied to thesubstrate9 condenses into droplets, these droplets are removed with the gas discharged from thebox nozzle50m. This can prevent attachment of the droplets to thedevice region90.

<v. Target Discharge Position>

The following describes respective target discharge positions of thenozzles50a,50b,50c,50mand50nin a group of thedischarge head51aby referring toFIGS.22 to23.FIG.22 schematically shows examples of target discharge positions of thenozzles50a,50b,50c,50mand50n.FIG.23 shows thedischarge head51aas viewed from a downstream side of the rotative direction AR9 of thesubstrate9.FIG.23 shows a condition where steam and gas are discharged from thedischarge head51a.

Target discharge positions Qa, Qb, Qc, Qe1, Qe2 and Qf of thenozzles50a,50b,50c,50mand50nin a group of thedischarge head51aare shifted from each other in the radial direction of thesubstrate9. Specifically, the target discharge position Qe1 of thebox nozzle50mregarding gas (target discharge position of gas to be discharged from the gas discharge ports506), and the target discharge position Qe2 of theinner gas nozzle50n, are on inner sides of the radial direction of the substrate9 (on the part of the center) relative to the respective target discharge positions Qa, Qb and Qc of the processingliquid nozzles50a,50band50c. The target discharge position Qe2 of theinner gas nozzle50nand the target discharge position Qe1 of thebox nozzle50mregarding gas are the same in the radial direction. Specifically, the target discharge position Qe2 of theinner gas nozzle50nand the target discharge position Qe1 of thebox nozzle50mregarding gas are spaced by the same distance from theend face93 of thesubstrate9. Further, the target discharge position Qf of thebox nozzle50mregarding steam (target discharge position of steam to be discharged from the steam discharge ports507), and the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50aand50b, are the same in the radial direction. Specifically, the target discharge position Qf, and the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50aand50b, are spaced by the same distance from theend face93 of thesubstrate9.

The respective target discharge positions Qa, Qb and Qc of the processingliquid nozzles50a,50band50care the same as those of the aforementioned preferred embodiment. Specifically, the target discharge position Qc of the rinseliquid nozzle50cis on an inner side of the radial direction of thesubstrate9 relative to the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50aand50b. The target discharge position Qa of the first chemicalliquid nozzle50aand the target discharge position Qb of the second chemicalliquid nozzle50bare the same in the radial direction.

In thedischarge head51a, the target discharge position Qe1 of thebox nozzle50mregarding gas is on an inner side of the radial direction of thesubstrate9 relative to the respective target discharge positions Qa, Qb and Qc of the processingliquid nozzles50a,50band50c. Accordingly, in the front surfaceperipheral area911 of thesubstrate9, gas is supplied to a position on an inner side relative to a position where a processing liquid is discharged. In this structure, a processing liquid supplied to the front surfaceperipheral area911 can be blown away from an inner side toward an outer side of thesubstrate9 with gas as described above, thereby removing the processing liquid on the front surfaceperipheral area911.

In thedischarge head51a, the target discharge position Qe2 of theinner gas nozzle50nis on an inner side of the radial direction of thesubstrate9 relative to the respective target discharge positions Qa, Qb and Qc of the processingliquid nozzles50a,50band50c. This can suppress entry of a processing liquid on the front surfaceperipheral area911 into thedevice region90. This can also stabilize the dimension of a region to be acted on by a processing liquid (such as an etching width), so that this dimension can be controlled with a higher degree of accuracy.

In thedischarge head51a, the target discharge position Qf of thebox nozzle50mregarding steam, and the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50aand50b, are spaced by the same distance from theend face93 of thesubstrate9. Accordingly, in the front surfaceperipheral area911 of thesubstrate9, steam and a processing liquid can be discharged to the same position. This can effectively accelerate reaction between each position within the front surfaceperipheral area911 and a chemical liquid supplied to this position.

<vi. Effects>

Thedischarge head51aof this modification includes thebox nozzle50mfrom which steam is discharged. In this structure, the front surfaceperipheral area911 can be heated by discharging steam from thebox nozzle50mtoward the front surfaceperipheral area911.

In this modification, thebox nozzle50mis placed upstream of the rotative direction AR9 of thesubstrate9 relative to the processingliquid nozzles50a,50band50c. In this structure, each position within the front surfaceperipheral area911 can be supplied with processing liquids from the processingliquid nozzles50a,50band50cafter being heated with steam discharged from thebox nozzle50m. This can accelerate reaction between a processing liquid supplied to the front surfaceperipheral area911 and thesubstrate9.

In this modification, the target discharge position Qf to which steam is to be discharged from thebox nozzle50mis the same in the radial direction of thesubstrate9 as the respective target discharge positions Qa and Qb of the chemicalliquid nozzles50aand50b. Accordingly, a position in the front surfaceperipheral area911 where a chemical liquid is to be discharged can be heated effectively with steam immediately before this position is supplied with a processing liquid. This structure can effectively accelerate reaction between a chemical liquid supplied to the front surfaceperipheral area911 and thesubstrate9.

<8. Other Modifications>

In the aforementioned preferred embodiment, steam is not supplied (heat assist is not given) to theback surface92 of thesubstrate9 during the chemical liquid process with SC-2 (step S204) and the chemical liquid process with DHF (step S208). Specifically, in the aforementioned preferred embodiment, the chemical liquid process with SC-2 is intended to advance not etching process but cleaning process, so heat assist is not given in this chemical liquid process. Regarding DHF, etching width DHF proceeds at a relatively high rate without heat assist, so that heat assist is not given either in the chemical liquid process with DHF. Meanwhile, depending on a process target, for example, steam may be supplied to theback surface92 of thesubstrate9 during the chemical liquid process with SC-2 or the chemical liquid process with DHF.

In the aforementioned preferred embodiment, gas is not supplied from thegas nozzle50dto the front surfaceperipheral area911 during each of the chemical liquid process with SC-1 (step S201), its subsequent rinsing process (step S202), the chemical liquid process with SC-2 (step S204), and its subsequent ringing process (step S206). This is for the reason as follows. Supplying SC-1 or SC-2 makes the front surfaceperipheral area911 hydrophillic, so that a film of a processing liquid supplied to this front surfaceperipheral area911 can be held relatively stably on this peripheral area only by centrifugal force generated as a result of rotation of thesubstrate9. Supplying gas to the front surfaceperipheral area911 in this condition in turn disadvantageously causes bounce of liquid. Meanwhile, depending on a process target, for example, gas can be supplied to the front surfaceperipheral area911 during each of the aforementioned processes.

In the aforementioned preferred embodiment, the liquid shake-off process is not performed after the chemical liquid process with SC-1. This is for the reason as follows. Thesubstrate9 is etched by the chemical liquid process with SC-1 in the aforementioned preferred embodiment. The rinsing process is performed after the etching without intervention of the liquid shake-off process to wash out a chemical liquid readily having been used for the etching, so that an etching width and an etching depth can be controlled favorably. Supplying SC-1 makes the front surfaceperipheral area911 hydrophillic. Thus, SC-1 remaining on the front surfaceperipheral area911 at the time when the chemical liquid process SC-1 is finished spreads thinly on the front surfaceperipheral area911. Supplying a rinse liquid as a next processing liquid to the front surfaceperipheral area911 in this condition makes bounce of liquid relatively unlikely. Specifically, omitting the liquid shake-off process after the chemical liquid process with SC-1 is not likely to cause a serious problem. Meanwhile, depending on a process target, for example, the liquid shake-off process may be performed after the chemical liquid process with SC-1. As an example, if the chemical liquid process with SC-1 realizes not etching but cleaning of the substrate9 (such as cleaning of removing of an organic substance or the like adhering to the front surfaceperipheral area911 of the substrate9), it is rather preferable that the liquid shake-off process be performed after the chemical liquid process with SC-1.

In the aforementioned preferred embodiment, the liquid shake-off process is not performed after the chemical liquid process with DHF. This is for the reason as follows. Thesubstrate9 is etched by the chemical liquid process with DHF in the aforementioned preferred embodiment. As described above, the rinsing process is performed after the etching without intervention of the liquid shake-off process to wash out a chemical liquid readily having been used for the etching, so that an etching width and an etching depth can be controlled favorably. Supplying DHF makes the front surfaceperipheral area911 water repellent, so that a processing liquid is hard to stay on the front surfaceperipheral area911. Additionally, in the aforementioned preferred embodiment, gas is supplied from thegas nozzle50dto the front surfaceperipheral area911 during the chemical liquid process with DHF. Thus, much of unnecessary DHF supplied to the front surfaceperipheral area911 is removed from theend face93 of thesubstrate9. Thus, when the chemical liquid process with DHF is finished, substantially no DHF remains on the front surfaceperipheral area911 of the substrate9 (without requiring the liquid shake-off process). Accordingly, there is scarce need to perform the liquid shake-off process particularly after the chemical liquid process with DHF. Meanwhile, depending on a process target, for example, the liquid shake-off process may be performed after the chemical liquid process with DHF.

In the aforementioned preferred embodiment, the chemical liquid processes with three types of chemical liquids (SC-1, SC-2 and DHF) are performed in order in each of the front surface peripheral process (step S2) and the back surface process (step S4) while process such as rinsing process is performed between these chemical liquid processes. Meanwhile, chemical liquid processes do not always use these three types of chemical liquids. As an example, chemical liquid process on the front surfaceperipheral area911 or theback surface92 may be performed using one or more chemical liquids selected from aqueous solutions of SC-1, SC-2, DHF, BDHF (buffered hydrofluoric acid), HF (hydrofluoric acid), hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid and ammonia, and mixed solutions thereof, for example.

Thefluid supplier55 of the aforementioned preferred embodiment can be formed by combining a hydrofluoric acid source to supply hydrofluoric acid (49% of hydrofluoric acid, for example), a hydrochloric acid source to supply hydrochloric acid, a hydrogen peroxide source to supply hydrogen peroxide, an ammonium hydroxide source to supply ammonium hydroxide, a pure water source to supply pure water, a carbon dioxide gas source to supply carbon dioxide, a nitrogen gas source to supply nitrogen gas, pipes, open-close valves, and a mixing valve, for example. By way of example, in this structure, hydrofluoric acid from the hydrofluoric acid source and pure water from the pure water source are mixed in the mixing valve in a prescribed ratio to generate DHF. Then, the resultant DHF is supplied to the discharge head51 (more specifically, first chemicalliquid nozzle50a). Further, hydrochloric acid from the hydrochloric acid source and hydrogen peroxide from the hydrogen peroxide source are mixed in the mixing valve in a prescribed ratio to generate SC-2. Then, the resultant SC-2 is supplied to the discharge head51 (more specifically, first chemicalliquid nozzle50a). Further, ammonium hydroxide from the ammonium hydroxide source and hydrogen peroxide from the hydrogen peroxide source are mixed in the mixing valve in a prescribed ratio to generate SC-1. Then, the resultant SC-1 is supplied to the discharge head51 (more specifically, second chemicalliquid nozzle50b). Further, carbon dioxide is dissolved in pure water from the pure water source to generate a rinse liquid. Then, the resultant rinse liquid is supplied to the discharge head51 (more specifically, rinseliquid nozzle50c).

In the aforementioned preferred embodiment, the heat processing unit7 heats thesubstrate9 with steam. The heat processing unit7 may use a different heat source (such as a heating wire heater or a lamp heater) to heat thesubstrate9. Meanwhile, heating thesubstrate9 with steam is particularly preferable as it can heat thesubstrate9 locally in a short time (and eventually, achieve a favorable throughput) compared to heating thesubstrate9 with a heating wire heater or a lamp heater.

In the aforementioned preferred embodiment, the liquid shake-off process includes the liquid moving step (step S2031) and the blow-away step (step S2032) that are performed in order. Meanwhile, the liquid moving step (step S2031) and the blow-away step (step S2032) can be performed in parallel.

Timing of the liquid shake-off process is not limited to that described as an example in the aforementioned preferred embodiment. As an example, the liquid shake-off process to be performed after the chemical liquid process with SC-2 may be omitted, or at least one of the liquid shake-off processes to be performed after corresponding rinsing processes may be omitted. Additionally, as described above, the liquid shake-off process may be performed after the chemical liquid process with SC-1 or after the chemical liquid process with DHF.

In thedischarge head51 of the aforementioned preferred embodiment, the first and secondchemical liquid nozzles50aand50bare placed upstream and downstream respectively of the rotative direction AR9 of thesubstrate9 relative to the rinseliquid nozzle50c. Alternatively, the second and firstchemical liquid nozzles50band50amay be placed upstream and downstream respectively of the rotative direction AR9 of thesubstrate9 relative to the rinseliquid nozzle50c.

In the aforementioned preferred embodiment, while thedischarge head51 is placed in the processing position, at least part of thedischarge head51 is housed in thecut605 formed in the innercircumferential wall601 of theguard member60. Meanwhile, while thedischarge head51 is placed in the processing position, at least part of the discharge head51 (as a specific example, at least part of thenozzle50 of the discharge head51) may be housed in a through hole penetrating through theguard member60 from theupper surface604 toward thelower surface602, for example. Specifically, thenozzle50 of thedischarge head51 in the processing position may be placed on a side opposite thecup31 with respect to part of theguard member60.

In the aforementioned preferred embodiment, the front surfaceperipheral area911 and theback surface92 of thesubstrate9 are processed by thesubstrate processing apparatus1. Meanwhile, only the front surfaceperipheral area911 or theback surface92 may be processed by thesubstrate processing apparatus1. In thesubstrate processing apparatus1, at least one of the front surfaceperipheral area911 and theback surface92 may be subjected to process other than etching process and cleaning process (such as film deposition process).

In the aforementioned preferred embodiment, theback surface92 of thesubstrate9 is processed after the front surfaceperipheral area911 of thesubstrate9 is processed in thesubstrate processing apparatus1. Meanwhile, the front surfaceperipheral area911 and theback surface92 can be processed in parallel.

In the aforementioned preferred embodiment, thesubstrate9 is described as a semiconductor wafer. Thesubstrate9 may also be a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magnetooptical disk, a glass substrate for a photomask, or a substrate for a solar cell, for example.

While the invention has been shown and described in detail, the foregoing description is in all aspects illustrative and not restrictive. It is therefore understood that numerous modifications and variations can be devised without departing from the scope of the invention.

Claims (12)

What is claimed is:

1. A substrate processing apparatus comprising:

a substrate holder to hold a substrate in a horizontal posture, said substrate holder rotating said substrate about a vertical rotary axis passing through the center of a plane of said substrate; and

a discharge head fora peripheral area from which a fluid is discharged toward a surface peripheral area of said substrate held on said substrate holder,

said discharge head for peripheral area including:

multiple nozzles; and

a supporter that supports said nozzles integrally,

said nozzles including:

a processing liquid nozzle from which a processing liquid is discharged toward said surface peripheral area; and

a gas nozzle from which gas is discharged toward said surface peripheral area, said gas nozzle being placed upstream of a rotative direction of said substrate relative to said processing liquid nozzle, wherein

each of said nozzles includes:

a nozzle body supported by said supporter such that a lower surface of said nozzle body extends horizontally;

an open discharge port formed in said lower surface of said nozzle body; and

a flow path formed inside said nozzle body, said flow path communicating with said discharge port at a lower end of said flow path, and

said flow path includes a tilted flow path section that extends obliquely downward such that said tilted flow path section reaches farther in a lower position in a direction from the center of said substrate toward an end face of said substrate to communicate with said discharge port at a lower end of said tilted flow path section, wherein

said lower surface extends parallel to a front surface of said surface peripheral area in a state where said processing liquid nozzle is placed in a processing position.

2. The substrate processing apparatus according toclaim 1, wherein a target discharge position of said gas nozzle is closer to the center of said substrate than a target discharge position of said processing liquid nozzle, said target discharge position being a position on said substrate about each of said nozzles where a fluid discharged from corresponding one of said nozzles is to reach.

3. The substrate processing apparatus according toclaim 1, wherein

said processing liquid nozzle of said discharge head for peripheral area includes multiple processing liquid nozzles, and

said processing liquid nozzles include:

a chemical liquid nozzle from which a chemical liquid is discharged; and

a rinse liquid nozzle from which a rinse liquid is discharged.

4. The substrate processing apparatus according toclaim 3, wherein a target discharge position of said rinse liquid nozzle is closer to the center of said substrate than a target discharge position of said chemical liquid nozzle, said target discharge position being a position on said substrate about each of said nozzles where a fluid discharged from corresponding one of said nozzles is to reach.

5. The substrate processing apparatus according toclaim 3, wherein

said chemical liquid nozzle of said discharge head for peripheral area includes multiple chemical liquid nozzles,

said chemical liquid nozzles include:

a first chemical liquid nozzle from which an acidic chemical liquid is discharged; and

a second chemical liquid nozzle from which an alkaline chemical liquid is discharged, and

said rinse liquid nozzle is placed between said first and second chemical liquid nozzles.

6. The substrate processing apparatus according toclaim 5, wherein a target discharge position of said first chemical liquid nozzle and a target discharge position of said second chemical liquid nozzle are spaced by the same distance from an end face of said substrate, said target discharge position being a position on said substrate about each of said nozzles where a fluid discharged from corresponding one of said nozzles is to reach.

7. The substrate processing apparatus according toclaim 1, wherein said nozzles include a steam nozzle from which steam is discharged toward said surface peripheral area.

8. The substrate processing apparatus according toclaim 7, wherein said steam nozzle is placed upstream of said rotative direction of said substrate relative to said processing liquid nozzle.

9. The substrate processing apparatus according toclaim 7, wherein

said processing liquid nozzle includes a chemical liquid nozzle from which a chemical liquid is discharged, and

a target discharge position of said steam nozzle and a target discharge position of said chemical liquid nozzle are spaced by the same distance from an end face of said substrate, said target discharge position being a position on said substrate about each of said nozzles where a fluid discharged from corresponding one of said nozzles is to reach.

10. The substrate processing apparatus according toclaim 1, comprising a controller that controls said substrate holder and said discharge head for peripheral area,

wherein while making said substrate holder rotate said substrate, said controller causes discharge of a processing liquid from said processing liquid nozzle toward said surface peripheral area of said rotated substrate and causes discharge of gas from said gas nozzle toward said surface peripheral area.

11. The substrate processing apparatus according toclaim 10, wherein said processing liquid discharged from said processing liquid nozzle is diluted hydrofluoric acid.

12. The substrate processing apparatus according toclaim 10, wherein said processing liquid discharged from said processing liquid nozzle is a rinse liquid.

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