US10622244B2 - Pulsed-mode direct-write laser metallization - Google Patents

Abstract

A method for manufacturing includes coating a substrate (22) with a matrix (28) containing a material to be patterned on the substrate. A pattern is fixed in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. The matrix remaining on the substrate outside the fixed pattern is removed, and after removing the matrix, the material in the pattern is sintered.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Patent Application 61/977,766, filed Apr. 10, 2014. This application is also a continuation-in-part of PCT Patent Application PCT/IL2014/000014, filed Feb. 28, 2014, claiming the benefit of U.S. Provisional Patent Application 61/765,808, filed Feb. 18, 2013. All of these related applications are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates generally to production of printed wiring on circuit substrates, and particularly to methods and systems for direct writing of metal features.

BACKGROUND

Direct laser sintering of metal inks is a known technique for metallization of printed wiring. For example, U.S. Patent Application Publication 2008/0286488 describes a method of forming a conductive film based on depositing a non-conductive film on a surface of a substrate. The film contains a plurality of copper nanoparticles, and exposing at least a portion of the film to light makes the exposed portion conductive by photosintering or fusing the copper nanoparticles.

Kumpulainen et al. describe direct laser sintering techniques in “Low Temperature Nanoparticle Sintering with Continuous Wave and Pulse Lasers,”Optics&Laser Technology43 (2011), pages 570-576. The authors relate to “printable electronics,” in which nanoparticle inks, printed on the surface of a substrate, contain additives, such as dispersing agents and carrier fluids, that provide good printing properties by changing the viscosity and separating the nanoparticles of the ink. In the sintering process, ink particles are heated to a certain, ink-specific temperature, and the carrier fluid and dispersing agents are evaporated from the ink. Additional heating after evaporation causes the nanoparticles to start to agglomerate. Laser sintering is said to enable short sintering times and selective sintering, making it possible for printed structures to contain fragile active components produced with other technologies. The paper describes tests done with two different types of laser: pulsed and continuous wave.

After the priority date of the present patent application, Theodorakos et al. described further laser sintering techniques in “Selective Laser Sintering of Ag Nanoparticles Ink for Applications in Flexible Electronics,”Applied Surface Science336 (2015), pages 157-162. The authors investigate the potential of three different laser sources: continuous wave (CW) or pulsed nanosecond and picosecond lasers, operating at 532 and 1064 nm, as efficient tools for selective laser sintering of Ag nanoparticle ink layers on flexible substrates. Theoretical simulations indicate that picosecond laser pulses restrict the heat-affected zone to a few micrometers only around the irradiated regions of the ink layer. These predictions were confirmed experimentally.

SUMMARY

Embodiments of the present invention provide enhanced methods and systems for laser-based direct writing of traces onto a substrate.

There is therefore provided, in accordance with an embodiment of the invention, a method for manufacturing, which includes coating a substrate with a matrix containing a material to be patterned on the substrate, and fixing a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. The matrix remaining on the substrate outside the fixed pattern is removed, and after removing the matrix, the material in the pattern is sintered.

In some embodiments, the material to be patterned includes nanoparticles. In a disclosed embodiment, the material in the nanoparticles is electrically conductive, and the pulsed energy beam includes pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.

Typically, directing the pulsed energy beam includes directing a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.

In the disclosed embodiments, the pulsed energy beam has a pulse repetition rate of at least 1 MHz, and possibly at least 10 MHz.

Typically, the matrix includes an organic compound in addition to the material to be patterned, and directing the pulsed energy beam includes directing a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause evaporation of the organic compound from the matrix without fully sintering the material in the pattern. The fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.

In some embodiments, sintering the material includes applying a bulk sintering process to the pattern fixed on the substrate. Alternatively, sintering the material includes directing further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.

In a disclosed embodiment, coating the substrate includes drying the matrix on the substrate before irradiating the coated substrate. Additionally or alternatively, removing the matrix includes applying a solvent to remove the matrix remaining on the substrate outside the fixed pattern.

There is also provided, in accordance with an embodiment of the invention, a method for manufacturing, which includes coating a substrate with a matrix containing a material to be patterned on the substrate, and directing a pulsed energy beam including pulses having a ramped temporal profile to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.

In the disclosed embodiments, the matrix includes an organic compound in addition to the material that is to be fixed to the substrate, and the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound. In some embodiments, the material includes nanoparticles, and sintering the material causes fusion of the nanoparticles at the point.

In a disclosed embodiment, the pulses have a duration no greater than 20 ns.

In some embodiments, directing the pulsed energy beam includes creating a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate. The points in the sequence may be mutually non-overlapping. Typically, the method includes, after creating the pattern, removing the matrix remaining on the substrate outside a locus of the pattern.

There is additionally provided, in accordance with an embodiment of the invention, a system for manufacturing, including a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate. A writing machine is configured to fix a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. A matrix removal machine is configured to remove the matrix remaining on the substrate outside the fixed pattern. A sintering machine is configured to sinter the material in the pattern after removal of the matrix.

There is further provided, in accordance with an embodiment of the invention, a system for manufacturing, including a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate. A writing machine is configured to direct a pulsed energy beam including pulses having a ramped temporal profile to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.

The present invention will be more fully understood from the following detailed description of the embodiments thereof, taken together with the drawings in which:

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is schematic, pictorial illustration showing a system for laser-based direct writing and stages in the operation of the system, in accordance with an embodiment of the present invention;

FIGS. 2A-2E are schematic top views of a substrate on which a pattern of traces is written, illustrated in successive stages of a process of forming the pattern, in accordance with an embodiment of the present invention;

FIGS. 3A and 3B are schematic sectional views of a substrate on which a trace is written, illustrated in successive stages of a process of forming the trace, in accordance with an embodiment of the present invention;

FIGS. 4A-4D are schematic sectional views of a substrate on which a trace is written, illustrated at successive times during fixation of the trace, in accordance with an embodiment of the invention;

FIG. 4E is a schematic sectional view of the substrate and trace ofFIGS. 4A-4D, following annealing of the trace, in accordance with an embodiment of the invention;

FIG. 5 is a plot illustrating a dependence of pulse energy thresholds for fixation of and damage to a trace written on a substrate, in accordance with an embodiment of the invention;

FIG. 6A is a schematic top view of a substrate on which spots have been written at an array of points by a pulsed beam with varying pulse parameters, in accordance with an embodiment of the invention; and

FIG. 6B is a schematic top view of a pattern formed on a substrate by applying a pulsed beam to a sequence of points, in accordance with an embodiment of the invention.

DETAILED DESCRIPTION OF EMBODIMENTSOverview

As explained in the above-mentioned PCT Patent Application PCT/IL2014/000014, one-step, direct laser sintering of metal inks and other nanoparticle sinterable inks often does not give sufficiently uniform results. (The term “nanoparticle” is used in the present description and in the claims to mean a microscopic particle having at least one dimension less than 100 nm.) This problem stems, at least in part, from heat conduction that occurs during the local sintering process. Non-uniform heat diffusion under these conditions leads to thermal variations, which in turn cause inconsistent sintering. This effect is most pronounced when dealing with high-resolution patterning of small metallic features, on the order of a few microns. At the same time, direct sintering of metal inks requires high laser fluence, on the order of tens to hundreds of J/cm², which makes the process slow and inefficient when dealing with large-area patterns.

In some embodiments of the present invention, the steps of writing and sintering are separated in a manner that enhances the uniformity and reliability of the resulting traces. A substrate is coated with a suitable matrix, and may be dried after coating to remove excess solvent. (Such matrices typically comprise an ink, paste or suspension containing nanoparticles, and are referred to herein generically, for the sake of convenience, simply as “NP inks.”) A pulsed energy beam source, such as a laser, then scans over the substrate to write the desired pattern without fully sintering the nanoparticles. The term “without fully sintering,” as used in the present description and in the claims, means that the nanoparticles in the bulk of the matrix remain substantially separate from one another, such that in the case of metal nanoparticles, the resistivity of the traces at this stage is still at least ten times greater than the final resistivity that is to be achieved after full sintering.

This stage of the process, in which the energy beam writes the pattern, is referred to herein as “fixing” the pattern in the matrix. In some embodiments, the beam scans over the locus of the pattern to be written on the substrate with a sequence (or “burst”) of pulses having fluence sufficient to cause adhesion of the material to the substrate along the pattern, but substantially below the threshold for full sintering. This fixation step stabilizes the matrix against subsequent removal, relative to the non-irradiated matrix. The use of pulsed irradiation in this step enhances the quality of the traces of the pattern by reducing the likelihood of damage due to rapid expansion of gases trapped in the matrix.

During this fixation stage, before the nanoparticle material is fully sintered, the material remains sufficiently porous to permit the organic compounds in the matrix to evaporate through pores in the material, thus preventing ablation or delamination of the material that could otherwise be caused by overly rapid evaporation of the organic compound. To ensure this sort of controlled evaporation, the laser (or other energy source) typically directs the sequence of pulses to impinge on each location in the pattern with a high repetition rate—for example, at least 1 MHz, and possibly greater than 10 MHz. The fluence per pulse is selected so that the desired porosity of the matrix is maintained until fixation is complete.

After the pattern has been fixed in this fashion, the matrix is removed from all non-fixed areas, so that only the stabilized pattern remains. Such removal may be accomplished, for example, by application of chemical solvents or by radiative ablation. Typically, the substrate is then heated uniformly in a bulk sintering process in order to sinter the nanoparticles in the remaining pattern. This approach achieves uniform metallization, in contrast to the inhomogeneity that is commonly encountered when direct laser sintering is used. It is also particularly useful in printing thick lines, as the laser fixation step is less sensitive to thickness than full laser sintering, while bulk sintering, in an oven, for example, works well on thick ink traces.

These embodiments thus provide a simple, fast metallization process, with fewer steps than conventional methods. The first step of the process involves only relatively low laser power. Subsequently, the actual metallization step—the bulk sintering process—which requires a high fluence, can be carried out using a high-power source with large area coverage, such as a thermal source or light strip illumination by a high-power flash lamp or a high-power laser or laser array. Because these embodiments avoid the high local temperatures that are associated with one-step direct laser sintering, they are appropriate for use in patterning of delicate, flexible substrates, such as plastics and foils.

In other embodiments, a pulsed laser or other energy beam is used for sintering, as well as fixation. In this case, the inventors have found that pulses having a ramped temporal profile achieve substantially better results than conventional pulses, whose intensity over time is roughly uniform (such as square wave pulses). The ramped temporal profile is advantageous in that it causes evaporation of organic compounds from the matrix that is coated on the substrate before sintering, and thus fusing, the nanoparticle material. The temporal profile and the fluence of the pulses are selected so as to enhance this effect and thus avoid ablation or delamination of the patterned material due to the evaporation of the organic compounds. These single-step embodiments are suitable particularly (although not exclusively) for creating individual sintered spots on a substrate or patterns built up from such spots.

The use of a pulsed laser for direct writing in embodiments of the present invention (for either fixation or direct sintering) achieves high resolution, with the possibility of adaptive registration, as in digital imaging techniques. The metal lines and other features that are created by the disclosed techniques can reach widths as small as a few microns. The resolution is limited only by the laser spot size, which can general be focused to the range of 1-2 μm, or even less. The resolution and the quality of line definition can be improved by tuning the parameters of the laser during the scan. Arbitrary patterns can be drawn in this manner, possibly working directly from computer-aided design and manufacturing (CAD/CAM) data.

In some embodiments, the entire cycle of writing and sintering is carried out without contacting the substrate. This feature is beneficial particularly for applications such as production of photovoltaic cells and plastic electronics foils.

Other potential applications of the techniques described herein include, for example, display back-end metallization for liquid crystal and organic light-emitting diode (OLED) displays, touch screen metallization, shunting lines for OLED lighting devices, and printed electronic circuits and devices on plastic foils. The techniques described herein may similarly be applied, mutatis mutandis, in writing patterns with a variety of NP materials—comprising not only metals, but also semiconductor and dielectric particles (such as ceramic particles)—on various dielectric, ceramic, semiconductor, polymeric, paper and metal substrates.

Although the embodiments disclosed herein refer specifically, for the sake of simplicity, to formation of a single metallization layer, in alternative embodiments traces may be written in multiple layers by appropriate repetition of the present techniques, with the same or different inks used in each layer.

System Description

Reference is now made toFIGS. 1 and 2A-2E, which schematically illustrate asystem20 and process of laser-based direct writing, in accordance with an embodiment of the present invention.FIG. 1 is a pictorial illustration showing component apparatus and stages in a process carried out bysystem20.FIGS. 2A-2E are schematic top views of asubstrate22 on which a pattern of traces is written insystem20, illustrated in successive stages of the process. As noted earlier,substrate22 may comprise, for example, glass or other dielectric, ceramic, semiconductor, plastic foil or other polymeric material, paper or metal.

Initially, acoating machine24 coats substrate22 (FIG. 2A) with a uniformly-thick layer of a matrix28 (FIG. 2B), such as metal nanoparticle (NP) ink, metal NP paste, or metal complex ink or paste. Such an ink or paste may contain, for example, silver, copper, nickel, palladium, and/or gold nanoparticles, as well as alloys of such metals, or possibly non-metallic nanoparticles, such as silicon or nano-ceramic particles. The layer thickness ofmatrix28 can vary, depending on the final outcome required, from about 0.2 μm to more than 10 μm.Coating machine24 may apply any suitable area coating technique that is known in the art, such as screen printing, slot-die or bar coating, spray coating, gravure, or spin coating.

Optionally, a dryingmachine26 dries the matrix that has been applied tosubstrate22. The ink or paste applied by coatingmachine24 typically contains a large amount of a solvent, while the metal volumetric content at this stage is no more than about 40%. It may therefore be advantageous—although not mandatory—to dry out the matrix before the laser scanning step in order to enhance the stability of the matrix and reduce loss of laser energy to the solvent. Possible drying methods include low-temperature baking (by convection or by radiation), air flow, vacuum drying, or combinations of these techniques.

Alaser writing machine30 fixes a pattern oftraces42 inmatrix28, as illustrated inFIG. 2C. In a typical implementation,substrate22 withmatrix28 coated thereon is mounted on a suitable table34, and abeam scanner36 scans the beam of a pulsed laser32 (or other suitable pulsed energy source) over the substrate.

Laser32 “writes” the desired pattern in the matrix by exposing the matrix to a well-defined sequence of laser pulses at predetermined positions on the film. The pattern is determined by acontroller38, typically on the basis of suitable CAD/CAM data stored in amemory40. The pulse parameters, including wavelength, spot size, fluence, duration, pulse shape, scan speed, and repetition rate, are selected so as to optimize the quality of the pattern, as described further hereinbelow. For high throughput, multiple laser beams (generated by multiple lasers or by splitting a single high-power pulsed laser beam into sub-beams, as illustrated inFIG. 1) may be scanned simultaneously over different areas of the substrate, with each beam controlled independently.

Various sorts of lasers and laser systems may be used inlaser writing machine30. In some embodiments, a laser diode source is directly modulated at a high rate to emit pulses of the desired shape, on a time scale that goes from one to several tens of nanoseconds. In some of these embodiments, the pulse shape is ramped (as described further hereinbelow), with a ramping time that is tuned to fit the trace thickness. The pulse parameters may also be tuned according to the trace width, with shorter pulses used when very narrow lines are needed. The choice of pulse parameters also depends on whethermachine30 is used only for fixation, to be followed by bulk sintering, or whetherlaser32 is used to fully sinter the traces.

Alternatively, a CW laser source, such as a CW fiber laser, can be modulated at the required high repetition rate to provide the desired pulsed beam. A fast external modulator, such as an electro-optic or acousto-optic modulator, may be used for this purpose.

FIG. 3A is a schematic sectional view, showing one oftraces42 fixed inmatrix28 by writingmachine30, in accordance with an embodiment of the present invention.Trace42 typically does not contain a substantial amount of sintered metal at this stage, but is rather in a state of matter that is, due to laser exposure (as the result of a photonic or thermal effect), more adherent to and stable against removal fromsubstrate22 than the surroundingmatrix28. As noted above, the laser parameters of writingmachine30 are chosen so as to provide the required local change in the matrix properties. The optimal parameters will vary depending on the precise matrix materials and dimensions and the method of writing that is chosen, and will be determined in each case by empirical testing and evaluation. In any case, the power applied at this stage is much less than that required for full sintering of the nanoparticles in the matrix.

After irradiation, amatrix removal machine44 removes theunfixed matrix28 from the full area ofsubstrate22, leaving only traces42 (FIG. 2D).Machine44 may comprise a solvent bath, for example, in which the substrate is immersed to wash away the matrix outside the pattern. Alternatively or additionally,machine44 may apply other sorts of removal techniques, such as chemical or physical ablation of the unfixed matrix.

FIG. 3B is a schematic sectional view oftrace42 remaining onsubstrate22 following removal ofmatrix28 bymachine44.

Finally, thetraces42 remaining onsubstrate22 after matrix removal are sintered in asintering machine46, giving sintered traces50 as shown inFIG. 2E. Sinteringmachine46 may comprise a conventional sintering oven, ifsubstrate22 is suitable for such treatment (as is generally the case with glass substrates, for example). Alternatively, sinteringmachine46 may use photonic sintering, which is generally better suited for sensitive substrates, such as plastic foils. Further alternatively, other sintering methods may be appropriate for sensitive substrates, for example plasma sintering or microwave sintering, both of which can sinter a metallic ink pattern without damaging an underlying plastic substrate.

In general, photonic sintering (or microwave or plasma sintering) is preferred over oven sintering when dealing with copper inks in ambient atmosphere, due to the tendency of copper to oxidize easily, as well as with inks containing other metals that are prone to oxidation. Oven sintering of copper inks can be used, as well, in an appropriate atmosphere (i.e., a non-oxidizing atmosphere and/or a reducing atmosphere).

Sinteringmachine46 as shown inFIG. 1 uses photonic sintering, with a high-intensityoptical source48 that scans over the surface ofsubstrate22.Source48 may comprise, for example, a collection of laser diode bars arranged in a row or in a stack, thus providing the required fluence even over a large area. An average power on the order of several kilowatts is achievable using commercially-available laser diode bars in the near infrared range (roughly 800-1000 nm), such as those produced by Oclaro Inc. (San Jose, Calif.), Coherent Inc. (Santa Clara, Calif.), or Jenoptik (Jena, Germany).

The next section of this description will describe methods that may be applied by writingmachine30 to fix the desired pattern inmatrix28. In an alternative embodiment, illustrated inFIGS. 6A and 6B, writingmachine30 may perform sintering, as well, by applying sufficient energy to target points on the substrate that define the pattern. In this latter case, theseparate sintering machine46 may not be required. The techniques described herein may be applied in conjunction with the materials and methods described in the above-mentioned PCT Patent Application PCT/IL2014/000014, as well as other suitable materials and methods that are known in the art.

Pulsed Laser Pattern Fixation

Reference is now made toFIGS. 4A-4E, which are schematic sectional views ofsubstrate22 at successive stages of writing atrace52 on the substrate, in accordance with an embodiment of the invention.FIGS. 4A-4D show matrix28 at successive times during fixation of the trace, whileFIG. 4E showstrace52 following annealing.

Specifically,FIGS. 4A-4D show the cumulative effects of a burst of pulses directed bylaser32 onto a given location inmatrix28. At the beginning of the process,nanoparticles50 are suspended in a substantial volume of a volatile, organic component ofmatrix28. Each successive laser pulse heats the matrix and evaporates an additional amount of the organic component, so that the density ofnanoparticles50 inmatrix28 increases from one pulse to the next. Due to diffusion of the heat within the matrix and substrate, however, the increase in density is roughly uniform over the volume of the matrix. Thus, as shown inFIG. 4D, pores remain betweennanoparticles50 inmatrix28, through which evaporating material can escape, even after nearly all of the organic material has been driven out of the matrix. The nanoparticles fuse together to createtrace52, as shown inFIG. 4E, only during the subsequent sintering step.

By contrast, the inventors have found that when a CW laser is used for pattern fixation, the nanoparticle density tends to increase particular in the upper layer of the matrix, leaving organic materials trapped below. Heating of these trapped organic materials can result in rapid, explosive evaporation, leading to ablation or delamination of the surrounding nanoparticle material, thus degrading the quality of the trace that is formed on the substrate.

By contrast, when pulsed radiation is used for fixation, the pulse parameters are chosen in order to promote gradual evaporation of the organic components ofmatrix28 over the course of a burst of pulses, while avoiding solidification of the upper layer ofnanoparticles50. The inventors have found short pulses, with pulse width in the range from about 1 ns to a few tens of nanoseconds, to give best results. High repetition rates—at least 1 MHz, and possibly 10 MHz or more—are desirable in order to achieve rapid fixation of the traces and thus high process throughput. The pulse fluence and other parameters are typically chosen in order to maximize throughput insofar as possible without damage to the traces.

FIG. 5 is a plot illustrating a working window for trace fixation by laser pulses, in accordance with an embodiment of the invention. Data points in the plot indicate, in the abscissa, the number of pulses applied to a given point onsubstrate22, and in the ordinate, the energy fluence per pulse. Alower curve60 indicates, for any given number of pulses, the minimum fluence required to fix the pattern in the matrix. In other words, as long as the pulses at a given point have at least this minimum fluence over the specified number of pulses, the matrix will not be washed away from the point after the fixation stage. Anupper curve62 indicates, for the given number of pulses, the maximum fluence that can be used without damaging the trace. Above this fluence level, rapid heating of the matrix is liable to cause ablation and/or delamination.

Thus, curves60 and62 define the working window for pulsed fixation ofmatrix28. As can be seen inFIG. 5, larger number of low-fluence pulses gives a wider window and hence a larger range of process tolerance. Within these bounds, the pulse fluence and number of pulses applied to each location can be chosen to give the desired solidity of fixation while maximizing process throughput. The optimal choice will also depend on other process parameters, such as the thickness and composition ofmatrix28, as well as the laser wavelength and spot size.Curves60 and62 were generated using a diode laser operating at 980 nm on a matrix film that was 460 nm thick. Alternatively, pulsed lasers in the ultraviolet, visible, or other parts of the infrared range may be used. The number of pulses required to fix the pattern (as reflected by curve60) tends to scale exponentially with the film thickness.

Pulsed Laser Sintering

FIG. 6A is a schematic top view of a substrate on which spots74,78 have been written at an array of points by a pulsed beam with varying pulse parameters, in accordance with an embodiment of the invention. In this embodiment, the substrate was coated with a matrix containing a nanoparticle material. A pulsed laser beam was directed to impinge on the substrate at each point in the array with fluence sufficient both to fix the material to the substrate and to sinter the material at the point. The laser beam in this case, as well, was a diode laser operating at 980 nm in pulsed mode. The peak power of the laser pulses that were applied in creatingspots74 and78 increased from the bottom to the top of the array shown inFIG. 6A, while the pulse duration increased from left to right, with the maximum pulse duration set to about 20 ns. Similar results are obtained at other wavelengths.

Two different pulse profiles were used in sintering the spots shown inFIG. 6A: Arectangular pulse profile70 was used in sinteringspots74, while a rampedpulse profile72 was used in sintering spots78.Profile72 is “ramped” in the sense that the instantaneous power of the pulse increases gradually over the pulse duration, with the greatest power occurring near the trailing edge of the pulse. The ramped temporal profile and the fluence of the ramped pulses are selected so as to cause evaporation of the organic compound from the matrix before sintering the nanoparticle material, without causing ablation or delamination of the material due to explosive evaporation of the organic compound. This advantageous effect of the ramped profile can be seen over a wide range of peak powers and pulse durations, as illustrated byspots78. By contrast, spots74, created usingprofile70,exhibit areas76 of damage due to ablation and delamination of the nanoparticle material.

Rampedprofile72 is useful particularly in creating single sintered spots on a substrate. These spots will typically have a larger diameter than the laser beam itself due to transverse thermal spreading of the beam energy over the nearby area of the matrix. (The ramped beam profile is generally less critical in line scanning, since each point in the line, other than the initial point, is preheated as the preceding point is sintered.) Single spots of this sort can be used to create a pattern on the substrate by directing the laser pulses to impinge on a sequence of points defining the pattern on the coated substrate. The points in this sequence can be mutually non-overlapping, i.e., the beam areas of the laser pulses that are used to create the neighboring spots need not themselves overlap, since each spot has a larger area than the laser beam used in fixing and sintering it. After creating the pattern in this manner, the matrix remaining on the substrate outside the locus of the pattern is removed, as in the preceding embodiments.

FIG. 6B is a schematic top view of apattern80 formed on a substrate by applying a pulsed beam to a sequence ofpoints82, in accordance with an embodiment of the invention. In this example,pattern80 comprises a line formed by the overlap ofspots78, althoughpoints82 do not themselves overlap. Patterns of substantially any desired form may be created efficiently in this manner.

It will be appreciated that the embodiments described above are cited by way of example, and that the present invention is not limited to what has been particularly shown and described hereinabove. Rather, the scope of the present invention includes both combinations and subcombinations of the various features described hereinabove, as well as variations and modifications thereof which would occur to persons skilled in the art upon reading the foregoing description and which are not disclosed in the prior art.

Claims (38)

The invention claimed is:

1. A method for manufacturing, comprising:

coating a substrate with a matrix containing a material to be patterned on the substrate;

fixing a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern;

removing the matrix remaining on the substrate outside the fixed pattern; and

after removing the matrix, sintering the material in the pattern.

2. The method according toclaim 1, wherein the material to be patterned comprises nanoparticles.

3. The method according toclaim 2, wherein the material in the nanoparticles is electrically conductive, and wherein the pulsed energy beam comprises pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.

4. The method according toclaim 1, wherein directing the pulsed energy beam comprises directing a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.

5. The method according toclaim 1, wherein the pulsed energy beam has a pulse repetition rate of at least 1 MHz.

6. The method according toclaim 5, wherein the pulse repetition rate is at least 10 MHz.

7. The method according toclaim 1, wherein the matrix comprises an organic compound in addition to the material to be patterned, and wherein directing the pulsed energy beam comprises directing a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause evaporation of the organic compound from the matrix without fully sintering the material in the pattern.

8. The method according toclaim 7, wherein the fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.

9. The method according toclaim 1, wherein sintering the material comprises applying a bulk sintering process to the pattern fixed on the substrate.

10. The method according toclaim 1, wherein sintering the material comprises directing further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.

11. The method according toclaim 1, wherein coating the substrate comprises drying the matrix on the substrate before irradiating the coated substrate.

12. The method according toclaim 1, wherein removing the matrix comprises applying a solvent to remove the matrix remaining on the substrate outside the fixed pattern.

13. A method for manufacturing, comprising:

coating a substrate with a matrix containing a material to be patterned on the substrate; and

directing a pulsed energy beam comprising pulses having a ramped temporal profile, in which an instantaneous power of each pulse increases gradually over a duration of the pulse, to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.

14. The method according toclaim 13, wherein the matrix comprises an organic compound in addition to the material that is to be fixed to the substrate, and wherein the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound.

15. The method according toclaim 13, wherein the material comprises nanoparticles, and wherein sintering the material causes fusion of the nanoparticles at the point.

16. The method according toclaim 13, wherein the pulses have a duration no greater than 20 ns.

17. The method according toclaim 13, wherein directing the pulsed energy beam comprises creating a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate.

18. The method according toclaim 17, wherein the points in the sequence are mutually non-overlapping.

19. The method according toclaim 17, and comprising, after creating the pattern, removing the matrix remaining on the substrate outside a locus of the pattern.

20. A system for manufacturing, comprising:

a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate;

a writing machine, which is configured to fix a pattern in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern;

a matrix removal machine, which is configured to remove the matrix remaining on the substrate outside the fixed pattern; and

a sintering machine, which is configured to sinter the material in the pattern after removal of the matrix.

21. The system according toclaim 20, wherein the material to be patterned comprises nanoparticles.

22. The system according toclaim 21, wherein the material in the nanoparticles is electrically conductive, and wherein the pulsed energy beam comprises pulses of radiation having an energy fluence and repetition rate selected so that a resistivity of the trace after fixing the pattern remains at least ten times greater than a final resistivity that is to be achieved by full sintering of the material in the pattern after removing the matrix.

23. The system according toclaim 20, wherein the writing machine is configured to direct a sequence of pulses of the energy beam to impinge on each location in the locus on the substrate.

24. The system according toclaim 20, wherein the pulsed energy beam has a pulse repetition rate of at least 1 MHz.

25. The system according toclaim 24, wherein the pulse repetition rate is at least 10 MHz.

26. The system according toclaim 20, wherein the matrix comprises an organic compound in addition to the material to be patterned, and wherein the writing machine is configured to direct a sequence of pulses of the energy beam with a fluence per pulse selected to as to cause evaporation of the organic compound from the matrix without fully sintering the material in the pattern.

27. The system according toclaim 26, wherein the fluence per pulse that is applied in fixing the pattern is selected so that the material remains sufficiently porous to permit the organic compound to evaporate through pores in the material without ablation or delamination of the material due to the evaporation of the organic compound.

28. The method according toclaim 20, wherein the sintering machine is configured to apply a bulk sintering process to the pattern fixed on the substrate.

29. The method according toclaim 20, wherein the sintering machine is configured to apply further pulses of the pulsed energy beam to sinter the pattern fixed on the substrate.

30. The method according toclaim 20, and comprising a drying machine, which is configured to dry the matrix on the substrate before irradiating the coated substrate.

31. The method according toclaim 20, wherein the matrix removal machine is configured to apply a solvent to remove the matrix remaining on the substrate outside the fixed pattern.

32. A system for manufacturing, comprising:

a coating machine, which is configured to coat a substrate with a matrix containing a material to be patterned on the substrate; and

a writing machine, which is configured to direct a pulsed energy beam comprising pulses having a ramped temporal profile, in which an instantaneous power of each pulse increases gradually over a duration of the pulse, to impinge on a point on the coated substrate with a fluence sufficient to fix the material to the substrate and sinter the material at the point.

33. The system according toclaim 32, wherein the matrix comprises an organic compound in addition to the material that is to be fixed to the substrate, and wherein the ramped temporal profile and the fluence are selected to as to cause evaporation of the organic compound from the matrix before sintering the material without causing ablation or delamination of the material due to the evaporation of the organic compound.

34. The system according toclaim 32, wherein the material comprises nanoparticles, and wherein sintering the material causes fusion of the nanoparticles at the point.

35. The system according toclaim 32, wherein the pulses have a duration no greater than 20 ns.

36. The method according toclaim 32, wherein the writing machine is configured to create a pattern of the material on the substrate by directing the pulses to impinge on a sequence of points defining the pattern on the coated substrate.

37. The system according toclaim 36, wherein the points in the sequence are mutually non-overlapping.

38. The system according toclaim 36, and comprising a matrix removal machine, which is configured to remove the matrix remaining on the substrate outside a locus of the pattern.

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