M275917 捌， 【新 明確 【先 層於 該層 沈積 表面 者造 焦。 表面 無論 滑之 化方 架設 安置 研磨 及至 該墊 新型說明： 型所屬之技術領域】 本新型一般來說係有關於基材之化學機械研磨， 地說，係關於用於化學機械研磨之調節盤。 前技術】 續 沉 積 導 體 半 導 體 或 絶 緣 形 成 之 〇 在 每 一 層 沈 積 後 徵 〇 隨 著 一 系 列 的 層 被 連 續 上 層 表 面 ， 即 基 材 暴 露 出 之 平 坦 外 表 面 對 積 體 電 路 製 造 面 會 妨 礙 微 影 設 備 之 準 確 對 坦 化 基 材 表 面 以 提 供 一 平 坦 效 研 磨 掉 不 平 坦 之 外 表 面 9 層 以 形 成 一 相 對 平 坦 、 光 積體電路一般係藉由連 基材（特別是矽晶圓）上而 即經蝕刻以創造出電路特 和蝕刻，基材之外表或最 ，會變得較不平坦。此不 成困擾，因為一不平坦表 因此，有對於週期性地平 之需要。平坦化，即可有 疋導體、半導體、或絕緣 表面。 化學機械研磨是一種可接受之平坦化方式。此平坦 式一般需要以暴露出欲研磨之基材表面之方式將基材 在一载具或研磨頭上。然後將基材靠抵一旋轉研磨頭 該載具頭也可以旋轉及/或擺動，以提供該基材和 表面間之額外運動。此外，一研磨漿（包含一種研磨劑 >、種化學反應性溶劑）可被散佈在該研磨墊上以在 和基材間介面處提供一種研磨化學溶液。 化學機械研磨製程中之重要因素是磨除速率（或研 M275917 磨速率）、以表面㈣或殘餘粒子㈣ 及最終之基材表面平整性和均勻性。、^、以 採取適當步驟來阻撓贫麻 榥該研磨墊之任何劣化 的，劣化可能會造成損傷該基絲（猢1丄* *要 暴材（例如由來自該墊上起阳 累積之殘餘物之刮痕）或降低研麼涉I 於 坪低研磨速率和效率（例如起 在廣泛使用過後該墊表面之鑲嵌化(glazing))之可能丨生、 刮傷該基材表面相關之問題是不言而μ。此兩與 之墊劣化問題皆會降低研磨效率，這辦 乂普遍M275917 捌, [NEW CLARIFICATION] The coke is formed on the deposition surface of this layer. The surface is slippery, smooth, erected, set up, polished, and the pad. New description: The technical field of the model] The new model generally relates to chemical mechanical polishing of the substrate, that is, to the adjustment disk for chemical mechanical polishing. Previous technology] Continued deposition of conductive semiconductors or insulation is formed after each layer is deposited. As a series of layers are continuously layered on the surface, that is, the flat outer surface exposed by the substrate will interfere with the lithographic equipment manufacturing surface of the integrated circuit. Accurately smooth the surface of the substrate to provide a flat effect. Grind away 9 layers of uneven outer surfaces to form a relatively flat, light-integrated circuit. Generally, the substrate is connected to the substrate (especially a silicon wafer). Etching to create circuit features and etch, the surface of the substrate or most, will become less flat. This is not a problem because an uneven table therefore requires a periodic flatness. Flattening, that is, erbium conductors, semiconductors, or insulating surfaces. Chemical mechanical polishing is an acceptable method of planarization. This flat type generally requires the substrate to be placed on a carrier or grinding head in such a way that the surface of the substrate to be ground is exposed. The substrate is then held against a rotary grinding head. The carrier head can also be rotated and / or swung to provide additional motion between the substrate and the surface. In addition, an abrasive slurry (containing an abrasive >, a chemically reactive solvent) may be spread on the abrasive pad to provide an abrasive chemical solution at the interface between the abrasive pad and the substrate. Important factors in the chemical mechanical polishing process are the removal rate (or grinding rate of M275917), the surface ㈣ or residual particles ㈣, and the final substrate surface flatness and uniformity. In order to take appropriate steps to obstruct any deterioration of the polishing pad, the deterioration may cause damage to the base wire (猢 1 丄 * * to violent materials (such as from residues accumulated from the sun on the pad). Scratches) or reduce the research related to low polishing rate and efficiency (such as the possibility of glazing on the surface of the pad after extensive use). The problems related to scratching and scratching the surface of the substrate are self-evident. And μ. These two problems of pad degradation will reduce the polishing efficiency, which is common.
塾劣化時對維持每一個基材之一致操作有相當困難。β 鑲嵌化現象是該墊材料之污染、熱、化學和 傷之複雜組合。當研磨機在操作中時，該墊會經受壓應貝 剪切力（shear)和摩擦力而產生熱和磨損。研磨聚和來^自/ 晶圓和塾之被磨掉之材料被壓入該墊材料之孔洞該 ^ 因此 材料自身變得纏結（matted)，並且甚至部分熔化。這此 應減少該墊之開放多孔性表面結構，並限制該墊施加新^ 研磨漿至該基材上之能力。 *It is quite difficult to maintain consistent operation of each substrate during degradation. Beta mosaicism is a complex combination of contamination, heat, chemistry, and injury of the pad material. When the grinder is in operation, the pad is subjected to heat and abrasion due to shear and friction. The abrasive material from the wafer / wafer and wafer is pressed into the holes of the pad material, so the material itself becomes matted and even partially melts. This should reduce the open porous surface structure of the pad and limit the ability of the pad to apply new polishing slurry to the substrate. *
一習知用來阻撓墊劣化和墊鑲嵌化之方法是以一調 節盤調節該研磨墊。可運用調節來維持該墊生命期間之穩 定的磨除速率，並且降低累積在該墊表面内之殘餘研磨副 產物之潛在負面效應，其會導致後研磨缺陷中之有害因素 增加。 因此’傾向於不停地藉由除去受到限制之研磨聚， 以及去纏結（un mat ting)、再展開（re-expanding)或再粗縫化 該墊材料等方法來調節該墊。該墊可在研磨一些基材後進 4 M275917 行調節。該墊也可以在研磨基材的同時進行調節。 【新型内容】 在一態樣中，本新型係針對一種化學機械研磨製程 中用於一研磨墊上之調節器。該調節器包含一基座結構， 其具有一旋轉軸和在一葉片區内之由該基座結構支撐之複 數個凸出葉片。每一個葉片從該基座結構中心區域向外呈 、 放射狀並切線地延伸出，並且該等葉片係朝向一共同方向延 伸。 Φ 本新型之實施可包含一或多種如下特徵。該基座結 構可以是盤狀。該共同方向可以是順時針或逆時針方向， 當從具有該等葉片之基座結構之一側觀看時。該葉片可以 是彎曲的，或線性的但不與該基座結構之半徑平行。若是 彎曲的，在該中心區域附近，每一個葉片皆可定向為與從 該旋轉軸向外延伸之相應半徑平行。在該調節器之外圍 處’母一個葉片可經定向而使該葉片表面之切線與從該旋 轉軸向外延伸之相應半徑形成介於約〇和60度間之角度。 該等葉片可以在該旋轉軸四周以相等角度間隔的方式配 置。複數個葉片之相鄰葉片可形成一通道，其在靠近中心 區域處比在該調節器邊緣處狹窄。該調節盤可以朝與該妓 同方向一樣之方向旋轉，相鄰之彎曲葉片可接觸該研磨塾 表面，並且介於相鄰彎曲葉片間之通道可以在一接近該調 一 節盤周邊之區域内捕捉研磨漿，並將捕捉之研磨漿引導至 該中心區域。該調節盤可以朝與該共同方向相反之方向旋 5 M275917 轉’該等相鄰彎曲葉片可以接觸該研磨墊表面，並且相鄰 彎曲葉片間之通道可將研磨漿從該中心區域趨出，並將排 出之研磨漿引導至該調節盤周邊之區域内。每一個葉片可 包含一底面、一背面、以及一正面。該背面或正面之至少 一個可以是傾斜的。該正面可以向前傾斜，並與一和該底 面垂直之參考平面形成前傾角度，或者該正面可以向後傾 斜，並與一和該底面垂直之參考平面形成後傾角度。該底 面和該为面、正面或外圍表面之一間之邊緣可以斜切 (chamfered)。該底面、該背面、或該正面之至少一個可以 塗覆以研磨用金剛砂塗層，可以是鋸齒狀或有凸邊的。一 搬入工具支架可支承一欲入物，其形成至少一個葉片之一 部分。該等葉片可經配置而使該葉片區之外圍具有至少3〇 %之開放區域，例如，介於30%和95%之開放區域。 在另一態樣中，本新型係針對一種調節方法。在該 方法中’由一調節器之基座結構支撐之複數個彎曲葉片係 處於與一研磨表面接觸狀態，並且該調節盤圍繞著一旋轉 軸旋轉，而使該葉片尖端之外切線速度超過該墊旋轉速度 之相對強度和方向，防止被捕捉在該盤中心區域内之研磨 漿之不受抑制之排出（exPulsion)。該調節器之葉片從該基 座結構中心區域向外輻射伸展出並朝一共同方向彎曲。 本新型之實施包含一或多種如下特徵。旋轉該基座 結構可包含朝與該共同方向一樣之方向旋轉’而使相鄰-曲葉片間之通道在一接近該调郎器周邊之區域内捕捉研磨 聚，並將捕捉之研磨漿引導至該中心區域。旋轉該基座結 6 M275917 構可包含朝與該共同方向相反之方向旋轉，而使相鄰彎曲 葉片間之通道將研磨漿從該中心區域排出，並將排出之研 磨漿引導至該調節器周邊之區域内。 本新型之其他優勢會在如下說明中提出，並且在某 種程度上會由於說明而變得明顯，或者可由本新型之實施 獲悉。本新型之優勢可藉由在申請專利範圍中具體指出之 機構及組合實現。 【實施方式】 ®One conventional method used to prevent pad degradation and pad inlay is to adjust the polishing pad with an adjustment disk. Adjustments can be used to maintain a stable abrasion rate during the life of the pad and reduce the potential negative effects of residual grinding by-products that accumulate in the surface of the pad, which can lead to increased harmful factors in post-abrasive defects. Therefore, ′ tends to continuously adjust the pad by removing the restricted abrasive polymer, and unmatting, re-expanding, or re-stitching the pad material. The pad can be adjusted in 4 M275917 rows after grinding some substrates. The pad can also be adjusted while grinding the substrate. [New content] In one aspect, the present invention is directed to a regulator for a polishing pad in a chemical mechanical polishing process. The regulator includes a base structure having a rotating shaft and a plurality of protruding blades supported by the base structure in a blade region. Each blade extends radially outward and tangentially from the central area of the base structure, and the blades extend in a common direction. Φ The implementation of this new model may include one or more of the following features. The base structure may be disc-shaped. The common direction can be clockwise or counterclockwise when viewed from one side of the base structure with the blades. The blade may be curved or linear but not parallel to the radius of the base structure. If curved, each blade may be oriented parallel to a corresponding radius extending outward from the axis of rotation near the center region. At the periphery of the regulator, a female blade can be oriented such that a tangent to the blade surface and a corresponding radius extending outward from the rotational axis form an angle between about 0 and 60 degrees. The blades can be arranged at equal angular intervals around the rotation axis. Adjacent blades of the plurality of blades may form a channel that is narrower near the center region than at the edge of the regulator. The adjusting disc can be rotated in the same direction as the prostitute, adjacent curved blades can contact the surface of the grinding paddle, and a channel between adjacent curved blades can be captured in an area close to the periphery of the adjusting disc. The slurry is ground, and the captured slurry is guided to the center area. The adjusting disc can be rotated in the direction opposite to the common direction by 5 M275917 turns. The adjacent curved blades can contact the surface of the polishing pad, and the channel between adjacent curved blades can pull the polishing slurry out of the center area, and The discharged slurry is guided into the area around the adjustment plate. Each blade may include a bottom surface, a back surface, and a front surface. At least one of the back or front may be inclined. The front face can be tilted forward and form a forward tilt angle with a reference plane perpendicular to the bottom surface, or the front face can be tilted backward and form a back tilt angle with a reference plane perpendicular to the bottom surface. An edge between the bottom surface and one of the front surface, the front surface, or the peripheral surface may be chamfered. At least one of the bottom surface, the back surface, or the front surface may be coated with a corundum coating for grinding, and may be jagged or raised. A carry-in tool holder can support an intent to form a part of at least one blade. The blades can be configured such that the periphery of the blade region has at least 30% open area, for example, between 30% and 95% open area. In another aspect, the present invention is directed to a method of regulation. In the method, 'a plurality of curved blades supported by a base structure of an adjuster are in contact with an abrasive surface, and the adjusting disc rotates around a rotation axis, so that the tangential speed outside the blade tip exceeds the The relative strength and direction of the rotation speed of the pads prevents the unchecked discharge of the abrasive slurry trapped in the center area of the disc. The blades of the regulator radiate outward from the central area of the base structure and bend in a common direction. The implementation of this novel type includes one or more of the following features. Rotating the base structure may include rotating in the same direction as the common direction, so that the passage between the adjacent-curved leaves in a region close to the periphery of the regulator, and the captured grinding slurry is guided to The central area. Rotating the base knot 6 The M275917 structure may include rotating in a direction opposite to the common direction, so that the passage between adjacent curved blades discharges the slurry from the central area, and guides the discharged slurry to the periphery of the regulator Within the area. Other advantages of the new model will be presented in the following description, and will become apparent to some extent due to the description, or may be learned from the implementation of the new model. The advantages of this new model can be realized by the institutions and combinations specifically specified in the scope of patent applications. [Embodiment] ®
在墊調節盤效能上之兩個考慮點是該盤隨著盤之老 化之磨耗機制，以及該盤與引進該研磨墊上之動態研磨漿 流之物理作用。現行調節盤一般運用一扁平或近扁平之盤 狀調節元件。在使用過程中，該盤外圍邊緣處之鑽石塗層 表面變得磨損，降低該墊調節之總效能。此外，習知調節 盤無法主動控制在該盤下方之研磨漿流。並且，被阻在該 盤外圍邊緣上之研磨漿有毛細向上（wick up)及圍繞該盤 之邊緣面的傾向，並且因為該盤自身之旋轉運動，研磨漿 會以不受控制的方式從該盤邊緣噴出。該不受控制之研磨 漿喷出會導致乾燥的研磨漿累積在該研磨工具環境中，這 接著會導致較高程度之表面刮痕形式之晶圓缺陷。 此間之本新型可提供一種改良之調節方法，藉由提 供多種界定良好之表面經過修整之調節元件來調節該墊 (而非只是一個單純的外圍邊緣），容許幾何驅動之影響發 揮在調節效能上，其提供延長之使用壽命，與目前之調節 7 M275917 技術相較。此外，本新型可提供一具有高度開放周圍區域 之調節盤，容許研磨漿流進該盤内部，而非阻滯在盤外壁 上。另外，本新型可提供凸出之肋狀物特徵，其可捕捉引 入該盤外側邊緣上之研磨漿，並且將研磨漿往内引導，因 為凸出之肋狀物之輻射狀灌注設計配置。Two considerations in the performance of the pad adjustment disk are the wear mechanism of the disk with the aging of the disk, and the physical interaction of the disk with the dynamic slurry flow introduced on the polishing pad. Current adjustment disks generally use a flat or nearly flat disk-shaped adjustment element. During use, the diamond-coated surface at the periphery of the disc becomes worn, reducing the overall effectiveness of the pad adjustment. In addition, the conventional regulating disc cannot actively control the flow of the slurry under the disc. In addition, the polishing slurry blocked on the peripheral edge of the disk tends to wick up and around the edge surface of the disk, and because of the rotational movement of the disk itself, the polishing slurry will be removed from the disk in an uncontrolled manner. The edge of the dish spouted. The uncontrolled ejection of the abrasive slurry will cause the dry abrasive slurry to accumulate in the environment of the abrasive tool, which in turn will result in a higher degree of wafer defects in the form of surface scratches. The new model here can provide an improved adjustment method, by providing a variety of well-defined surface trimmed adjustment elements to adjust the pad (rather than just a simple peripheral edge), allowing the influence of geometric driving to play an adjustment effect It offers an extended service life compared to the current Adjust 7 M275917 technology. In addition, the new model can provide an adjustment disc with a highly open surrounding area that allows the slurry to flow into the interior of the disc instead of blocking it on the outer wall of the disc. In addition, the new model can provide protruding rib features, which can capture the grinding slurry introduced on the outer edge of the disc, and guide the grinding slurry inward because of the radial infusion design configuration of the protruding ribs.
一基材10可在化學機械研磨（CMP)設備20之研磨 站25處接受研磨。適合之CMP設備之敘述可在美國專利 第5，73 8,5 74號中找到，其全文係合併於此以供參考。雖 然未示出，該CMP設備可以包含多個研磨站。 如第1圖所示，該研磨站25包含一旋轉平台30, 其支撐一研磨墊32，以及一墊調節器40。該旋轉平台30 和該調節器40兩者皆架設在該CMP設備之機械基坐上。 每一個墊調節器40包含一調節頭46、一未示出之基座、 以及一將該調節頭46與該基座連接之手臂42。該基座可 旋轉以使該手臂42及該調節頭46掃過該研磨墊36表面。A substrate 10 may be polished at a polishing station 25 of a chemical mechanical polishing (CMP) apparatus 20. A description of suitable CMP equipment can be found in U.S. Patent No. 5,73 8,5 74, which is incorporated herein by reference in its entirety. Although not shown, the CMP apparatus may include multiple grinding stations. As shown in FIG. 1, the polishing station 25 includes a rotating platform 30 that supports a polishing pad 32 and a pad adjuster 40. Both the rotating platform 30 and the adjuster 40 are mounted on the mechanical base of the CMP equipment. Each pad adjuster 40 includes an adjusting head 46, a base not shown, and an arm 42 connecting the adjusting head 46 to the base. The base can be rotated to sweep the arm 42 and the adjusting head 46 across the surface of the polishing pad 36.
每一個研磨站2 5也包含一清潔杯，其含有用來沖洗 或清潔該調節頭46之清潔液體。該手臂42可以將該調節 頭46移出該清潔杯，並將該調節頭46安置在該研磨墊32 上方。 該調節頭46包含一調節盤200，其係處於與該研磨 墊接觸之狀態下。該調節盤200，其會在下方詳細討論， 通常係經安置在該調節頭46底部，並且可以沿著轴4 1旋 轉。該調節盤200之底面可包含調節結構，例如凸出物或 切割邊緣，其在調節製程期間與該研磨墊3 2表面接觸。在 8 朝向 M275917 調節期間，該研磨墊32和該調節盤200兩者皆旋轉’因 那些凸出物或切割邊緣相對於該研磨墊3 2表面移動，因 磨擦並再紋理化（retexturizing)該研磨墊32表面。 該調節頭46包含將該調節盤200連結在該調節 46上之機構（例如機械連結系統，例如閂或螺絲釘，或 性連結系統），以及使該調節盤200沿著該旋轉軸41旋 之機構（例如通過該手臂或位於該調節頭内部之旋轉輪 驅動皮帶）。此外，該調節系統40也可以包含調節該調 盤2 0 0和該研磨墊3 2間之壓力之機構（例如位於該調節 或該基座内之氣動或機械式促動器）這些機構可具有許 可能之實施（並且不受限在第1圖所示者）。適合之實施 在美國專利第6,200，199號和第6,217,429號中找到，其 文係合併於此以供參考。 參見第2圖，該調節盤200包含一普通平面圓盤 式之基座結構2 1 〇，以及從該基座結構2 1 0底部凸出之 個彎曲葉片220。每一個彎曲葉片220大體上以輻射方 延伸，並包含一底面222、一正面224、一背面228、以 一外圍表面226。每一個弯曲葉片220也可以包含一尖 之前緣225。所有的彎曲葉片220可具有相同形狀，或 該等葉片220可具有不同形狀。 每一個葉片220可從一中心區域24〇(該等葉 伸進入其中）延伸至該調節盤200邊緣。鄰近认^片不 中心區域240，該等葉片220可定向為大題上 盤 盤之旋轉中心平行，而在該調節盤外邊緣處， 此 而 頭 磁 轉 之 節 頭 多 可 全 樣 多 向 及 銳 者 延 之 制 M275917 經定向而使該彎曲葉片之切線與通過該盤中心及該外側切 點之輻射方向形成約0至6 0度之角度。該等葉片可以線性 地延伸而非彎曲的，但是帶有角度而使其不會沿著該盤之 半徑延伸。因此，在任一情況中，該等葉片皆從該盤之中 心區域2 4 0呈輻射狀且切線地延伸出。 如在第3 A圖中所示者，每一個葉片2 2 0皆可經設 計而使正面224和背面228以相同切線方向彎曲或線性延 伸。在一實施中，所有葉片220皆經安置並對齊以大體上 朝相同之切線方向彎曲，例如，逆時針方向。每一對相鄰 之彎曲葉片220可經安置並對齊以大體上朝相同之切線方 向彎曲而形成一彎曲之凹槽230。該凹槽230在該調節盤 2 00周邊處（在該凹槽之外側開口 231處）可以比接近該調 節盤200中心處（在該凹槽之内側開口處）寬。一般來說， 該葉片區周圍，由該等葉片220之外圍表面界定（在第3A 圖實施中之環狀執跡），具有高度開放之周圍區域，例如， 至少3 0 %或至少5 0 %，例如3 0 %至9 5 %。此開放區域使 研磨漿可以流進該盤内部，而非阻滯在盤外壁上。 在調節期間，該調節盤2 0 0係經移動而與該研磨墊 接觸並旋轉。每一對相鄰之彎曲葉片220接觸該研磨墊32 而使該彎曲凹槽提供研磨漿分佈之灌注通道（pumping channel)。若該調節盤200以與該彎曲葉片220相同之切 線方向2 0 1旋轉，則在該研磨墊上位於該調節盤2 0 〇周邊 處之研磨漿245會被捕捉並透過該灌注通道230被向内引 進該調節盤2 0 0中心。該調節盤可以能夠使該等葉片尖端 10 M275917 之外切線速度超過相對墊旋轉速度之旋轉速率旋轉，因此 防止被捕捉在該盤中心區域内之研磨漿之不受抑制之排出 (expulsion)。此外該灌注通道漸減之剖面區域作用如同漏 斗，因而在該研磨漿進入該調節盤20〇之中心區域240時 增加其壓力，導致接近該調節盤200中心之陷入之研磨漿 更有效率地被引導進入該研磨勢3 2内之開放之單元結構 或溝槽中。因此，該調節盤可有助於更均勻之研磨漿分佈。 相反地，若該調節盤200以與該等葉片220之切線方向相 反之切線方向201旋轉，該灌注通道230產生將研磨聚245 從在該研磨勢内位於該研磨盤中心區域240處之該開 放之單元結構吸出之作用，並將該研磨漿驅向該調節盤 200周邊或完全離開該調節盤2〇〇。因此，該調節盤可有助 於在沖洗過程期間（其中例如去離子水之清潔液體被供應 至該研磨墊以沖洗掉研磨漿）將研磨衆從該研磨墊上除 去，並且因此而改善了該研磨墊之潔淨度並降低缺陷。 參見第3B圖，該彎曲葉片220係經安置在該調節 盤2 00底部，並由該基座結構210支承。該彎曲葉片220 之底面222與該研磨塾32之上表面接合。在一實施中’於 第3B圖中示出，該彎曲葉片220之正面224基本上係與 該彎曲葉片220之底面222垂直。該前緣225係界定在該 正面224和該底面222間。當該前緣225接觸並倚著該研 磨塾32移動時，其摩擦或挖掘該研磨塾表面，因此提供調 節作用。 在另〆實施中，於第3C圖中示出，該正面224向 M275917 前傾斜，並相對於一與該底面222垂直之參考表面形成一 前傾角度Θ ，即，該正面224和該研磨墊表面間之角度係 一鈍角。如在圖中所示者，當該正面224向前傾斜時，該 正面224相對於前進方向係在該前緣225前方。Each grinding station 25 also contains a cleaning cup containing a cleaning liquid for rinsing or cleaning the adjustment head 46. The arm 42 can move the adjustment head 46 out of the cleaning cup, and place the adjustment head 46 above the polishing pad 32. The adjusting head 46 includes an adjusting disc 200 which is in a state of being in contact with the polishing pad. The adjusting disk 200, which will be discussed in detail below, is usually disposed at the bottom of the adjusting head 46 and can be rotated along the axis 41. The bottom surface of the adjustment disk 200 may include an adjustment structure, such as a protrusion or a cutting edge, which is in contact with the surface of the polishing pad 32 during the adjustment process. During the adjustment of 8-direction M275917, both the polishing pad 32 and the adjustment disk 200 are rotated 'because those protrusions or cutting edges move relative to the surface of the polishing pad 32, the polishing is caused by friction and retexturizing The surface of the pad 32. The adjustment head 46 includes a mechanism (such as a mechanical connection system such as a bolt or screw, or a sexual connection system) that connects the adjustment disk 200 to the adjustment 46, and a mechanism that rotates the adjustment disk 200 along the rotation axis 41. (Such as a belt driven by the arm or a rotating wheel located inside the adjustment head). In addition, the adjustment system 40 may also include a mechanism (such as a pneumatic or mechanical actuator located in the adjustment or the base) that adjusts the pressure between the dial 200 and the polishing pad 32. These mechanisms may have Possible implementation (and not limited to those shown in Figure 1). Suitable implementations are found in U.S. Patent Nos. 6,200,199 and 6,217,429, the contents of which are incorporated herein by reference. Referring to FIG. 2, the adjusting disk 200 includes a base structure 2 10 in the form of an ordinary flat disk, and a curved blade 220 protruding from the bottom of the base structure 2 10. Each curved blade 220 extends generally in a radiating direction and includes a bottom surface 222, a front surface 224, a back surface 228, and a peripheral surface 226. Each curved blade 220 may also include a pointed leading edge 225. All of the curved blades 220 may have the same shape, or the blades 220 may have different shapes. Each blade 220 may extend from a central area 24o into which the blades extend, to the edge of the adjustment plate 200. Adjacent to the non-center area 240 of the recognition plate, the blades 220 can be oriented parallel to the center of rotation of the disk, and at the outer edge of the adjusting disk, the head of the magnetic head can be fully multi-directional and The sharpen extension M275917 is oriented so that the tangent of the curved blade and the direction of radiation passing through the center of the disc and the outer tangent point form an angle of about 0 to 60 degrees. The blades may extend linearly rather than curved, but are angled so that they do not extend along the radius of the disc. Therefore, in either case, the leaves extend radially and tangentially from the central region 2 40 of the disc. As shown in Figure 3A, each blade 220 can be designed such that the front face 224 and the back face 228 are bent or linearly extended in the same tangential direction. In one implementation, all the blades 220 are positioned and aligned to bend substantially in the same tangential direction, e.g., counterclockwise. Each pair of adjacent curved blades 220 can be positioned and aligned to bend in substantially the same tangential direction to form a curved groove 230. The groove 230 may be wider at the periphery of the adjustment disk 200 (at the opening 231 outside the groove) than near the center of the adjustment disk 200 (at the opening inside the groove). Generally, the periphery of the blade area is defined by the peripheral surfaces of the blades 220 (annular track in the implementation of Figure 3A), and has a highly open surrounding area, for example, at least 30% or at least 50% , Such as 30% to 95%. This open area allows the slurry to flow into the interior of the disc instead of blocking it on the outer wall of the disc. During the adjustment, the adjustment disk 200 is moved into contact with the polishing pad and rotated. Each pair of adjacent curved blades 220 contacts the polishing pad 32 so that the curved grooves provide a pumping channel for the distribution of the polishing slurry. If the adjusting disk 200 is rotated in the same tangential direction 2 0 1 as the curved blade 220, the polishing slurry 245 on the polishing pad located at the periphery of the adjusting disk 200 will be captured and passed inward through the perfusion channel 230. Introduce the center of the adjustment disk 200. The adjusting disc can rotate the tangential speed beyond the blade tip 10 M275917 beyond the relative rotation speed of the pad, thereby preventing the unchecked expulsion of the polishing slurry trapped in the central area of the disc. In addition, the decreasing cross-sectional area of the perfusion channel acts like a funnel, so when the slurry enters the central area 240 of the adjusting disk 20, its pressure is increased, resulting in the guided slurry that is near the center of the adjusting disk 200 being guided more efficiently Into the open cell structure or trench within the grinding potential 32. Therefore, the adjustment disc can contribute to a more uniform slurry distribution. Conversely, if the adjusting disk 200 is rotated in a tangential direction 201 opposite to the tangential direction of the blades 220, the perfusion channel 230 generates the opening 245 from the opening located in the center of the grinding disk 240 within the grinding potential. The unit structure sucks out and drives the grinding slurry toward the periphery of the adjusting plate 200 or completely leaves the adjusting plate 200. Therefore, the adjusting disc may help to remove the polishing pads from the polishing pad during the rinsing process, in which a cleaning liquid such as deionized water is supplied to the polishing pad, and thus the polishing is improved Cleanliness of the pad and reduces defects. Referring to FIG. 3B, the curved blade 220 is disposed at the bottom of the adjusting disk 2000 and is supported by the base structure 210. The bottom surface 222 of the curved blade 220 is joined to the upper surface of the grinding pad 32. In an implementation, as shown in FIG. 3B, the front surface 224 of the curved blade 220 is substantially perpendicular to the bottom surface 222 of the curved blade 220. The leading edge 225 is defined between the front surface 224 and the bottom surface 222. When the leading edge 225 contacts and moves against the grinding wheel 32, it rubs or digs the surface of the grinding wheel, thus providing an adjustment effect. In another implementation, as shown in FIG. 3C, the front surface 224 is inclined forward of M275917 and forms a forward inclination angle Θ with respect to a reference surface perpendicular to the bottom surface 222, that is, the front surface 224 and the polishing pad The angle between the surfaces is an obtuse angle. As shown in the figure, when the front face 224 is inclined forward, the front face 224 is in front of the leading edge 225 with respect to the advancing direction.
在另一實施中，於第3D圖中示出，該正面224向 後傾斜，並相對於一與該底面222垂直之參考表面形成一 後傾角度0 ，即，該正面224和該研磨墊表面間之角度係 一銳角。如在圖中所示者，當該正面224向後傾斜時，該 正面224相對於前進方向係在該前緣225後方。 在第3B-3D圖之實施中，該前緣225可以是直角或 尖銳前緣。該前緣225也可被調整，例如斜切，以製造出 更適於一已知類型研磨墊材料所需求之調節製程之前緣 225，例如固定研磨料、編織物、或燒鑄聚胺基曱酸酯（cast polyurethane)。後緣，即該背面228和該底面222間之邊 緣也可以斜切，如同該外緣也可以一般，即該葉片之外圍 表面226和該底面222間之邊緣。 在第3B-3D圖之實施中，該彎曲葉片22〇之正面224 以是凸面的、凹面 及/或該底面222 材料，較佳地在6 0In another implementation, as shown in FIG. 3D, the front surface 224 is inclined backwards and forms a backward tilt angle 0 with respect to a reference surface perpendicular to the bottom surface 222, that is, between the front surface 224 and the polishing pad surface The angle is an acute angle. As shown in the figure, when the front face 224 is tilted backward, the front face 224 is behind the leading edge 225 with respect to the forward direction. In the implementation of Figures 3B-3D, the leading edge 225 may be a right-angled or sharpened leading edge. The leading edge 225 can also be adjusted, such as chamfered, to produce a leading edge 225 that is more suitable for the conditioning process required by a known type of abrasive pad material, such as fixed abrasives, braids, or fired polyurethane. Acid ester (cast polyurethane). The trailing edge, that is, the edge between the back surface 228 and the bottom surface 222 can also be chamfered, as can the outer edge, that is, the edge between the outer peripheral surface 226 of the blade and the bottom surface 222. In the implementation of FIGS. 3B-3D, the front surface 224 of the curved blade 22 may be convex, concave and / or the bottom surface 222 material, preferably at 60.
可以是平面的。但是，該正面224也可 的、或具有其他形狀。此外’該正面224 可塗覆以研磨用金剛砂元素或其他類似 至140粒度（grit size)範圍内，相當於 田W 420至1〇5微米尺 寸。該正面224及/或該底面222也 % 了包含一鋸齒狀或有 凸邊之表面，以在該彎曲葉片220上形』、 化成多個調節邊緣琢 面。第4圖示出該調節頭之實施，发士Can be flat. However, the front surface 224 may have other shapes. In addition, the front surface 224 may be coated with a corundum element for grinding or the like to a range of 140 grit size, which is equivalent to a Tian W 420 to 105 micron size. The front surface 224 and / or the bottom surface 222 also include a jagged or convex surface to form the curved blade 220, and form a plurality of adjusting edge facets. Figure 4 shows the implementation of this adjustment head.
&中該等彎曲葉片22G 12 M275917 包含位於該等正面2 24上之鋸齒邊緣。當 結構或一圖案化或有凸邊型式之接觸表面 及/或該底面222可塗覆以一硬化材料， 化物’例如碳化矽、碳化鈦或碳化鎢。 在另一實施中，於第5 A-5C圖中示 220可包含一嵌入工具支架229，以用來 3 1 0，其提供該調節盤該接觸邊緣3丨丨。該 由習知機構支承在該調節盤上，例如螺絲 嵌入配合（press fitting)。該接觸邊緣311 底面222共平面，或者也可以延伸超過該 該接觸邊緣311延伸超過該底面222之距 例如，利用調整螺絲。 在又另一實施中，於第6圖中示出 也可包含一用來引進清潔液體，例如去離 調節盤200中心之區域之通路280。該通 在或接近該調節盤2 0 0中心處，例如在該 該專葉片不會延伸進入處。從該通路280 會流進通道2 3 0接近該調節盤2 0 0中心處, 以與該等葉片220之切線方向相反之方向 近該調節盤200中心處之清潔液體275會 之周邊區域被排出通道230。 該調節盤200之某些部分可用不鏞 某些其組合物構成。此外，該調節盤之某 聚合物（hard polymer)構成’例如聚苯义 使用一平面表面 時，該正面 224 例如金剛鑽或碳 出，該彎曲葉片 支承一嵌入工具 嵌入工具310可 釘、膠黏劑、或 可以與該葉片之 底面2 2 2。此外， 離是可調整的， ，該調節盤200 子水，至接近該 路280可以安置 中心區域240内 引進之清潔液體 3當該調節盤200 2 〇 3旋轉時，接 從該調節盤200 鋼、碳化物、或 些部分也可用硬 夜醚（polyphenyl 13 M275917 sulfide ’ PPS)、例如 Meldin 之聚醯亞胺、例如 Celazole 之聚苯井_嗤（卩〇1丫6 6112丨111丨4&2〇16，？81)、例如人1*1〇11之聚 鱗 &| 酉同（polyetheretherketone，PEEK)、例如 Teflon 之聚四 氟乙嫦(polytetrafluoro ethylene) 、 聚碳酸 酯 (polycarbonate)、例如 Delrin 之縮醛（acetal)、或是例如 Ulterm 之聚醚醯亞胺（poiyetherimide，PEI)。 選用來構成該調節盤200之材料一般取決於該研磨 墊3 2之構成材料。該等葉片2 2 0較佳之表面特性一般也取 決於該研磨墊3 2之構成材料。例如，當該研磨墊3 2之構 成材料為聚胺基曱酸酯時（例如由R〇del公司以IC1〇〇〇或 icioio為商品名供應之材料），該等葉片22〇需要與該研 磨塾3 2接觸之所有表面較佳地係經塗覆以金剛鑽微粒。該 金剛鑽塗層之粒度可在6 0至1 2 〇粒度範圍内。該等葉片 220上之金剛鑽塗層也可經額外處理，以在低pH或腐蝕性 環境中保護該金剛鑽塗層。 該等葉片2 2 0之表面特性也可經調整以使該等葉片 220在調節製程期間更有效率。例如，該調節盤2〇〇上之 該等葉片220可由破化矽構成並加工，並且該等葉片22〇 之表面可利用目前已知之表面處理製程來塗覆以或轉換為 非晶金剛鑽表面。 本新型已經根據一些實施例做敘述。但是本新型並 不受限於所描繪及敘述之實施例。更恰當地說，本新型之 範圍係由所附之申請專利範圍來界定。 14 M275917 【圖 式 簡 單說明 ] 本 新型將 會 從 此 間提出之 本新型之詳 細 說 明 及 伴 隨 圖示 而 被 更全面 的 瞭 解 。但是， 該等圖不不 應 被 理 解 為 將 本新 型 限 制在此 間 所 示 及敘述之 特定實施例 〇 在 不 同 圖 示 中指 定 相 同之元 件 符 號 來表示相 同元件。 第 1圖示 出 安 置 在一研磨 墊上之調節 器 頭 以 利 用 一調 即 盤 調節該 研 磨 墊 〇 第 2圖示 出 一 調 節盤，其 包含安置在 該 調 節 盤 底 部 之彎 曲 葉 片。 第 3A圖示i ϋ第 2圖之調節盤之底視圖c 第 3B圖示出第： 2圖之調節盤沿著來自 1第3A 圖 之 線 3B-3B 之 側視圖 〇 第 3C-3D 圖 之 每 一個皆示 出該調節盤 之 實 施 之 側 視 圖。 第 4圖示 出 具 有 包含錫齒 狀邊緣之彎 曲 葉 片 之 調 節 盤之 實 施 〇 第 5 A-5C 圖 示 出 包含用來 支承彼入工 具 之 欲 入 工 具 支架 之 調 節盤。 第 6圖示 出 包 含 一通道以 將清潔液體 引 入 接 近 該 調 節盤 中 心 區域之 調 即 盤 0 【主 要 元 件符號 說 明 ] 25 研 磨 站 30 旋轉平台 32 研 磨 墊 40 墊調節器& The curved blades 22G 12 M275917 include serrated edges on the front faces 2 24. When the structure or a patterned or convex-shaped contact surface and / or the bottom surface 222 can be coated with a hardened material, such as silicon carbide, titanium carbide or tungsten carbide. In another implementation, 220 shown in FIGS. 5A-5C may include an embedded tool holder 229 for 3 1 0, which provides the adjusting plate and the contact edge 3 丨 丨. The adjusting disc is supported by a known mechanism, such as a press fitting. The bottom surface 222 of the contact edge 311 is coplanar, or may extend beyond the distance that the contact edge 311 extends beyond the bottom surface 222. For example, using an adjusting screw. In yet another implementation, shown in Fig. 6, a passage 280 for introducing a cleaning liquid, such as a region away from the center of the adjustment plate 200, may be included. The passage is at or near the center of the adjusting disk 200, for example, where the specialized blade does not extend into the entrance. From the passage 280, it will flow into the channel 2 3 0 near the center of the adjustment disk 200, and the surrounding area of the cleaning liquid 275 will be discharged near the center of the adjustment disk 200 in a direction opposite to the tangential direction of the blades 220. Channel 230. Some parts of the adjusting disk 200 may be composed of certain compositions. In addition, a hard polymer of the adjusting disk constitutes' for example, polyphenylene, when a flat surface is used, the front face 224, such as diamond or carbon out, and the curved blade supports an inserting tool. The inserting tool 310 can be nailed, adhesive , Or can be with the bottom surface of the blade 2 2 2. In addition, the distance can be adjusted. The adjustment disc 200 can be filled with water until it is close to the road 280. The cleaning liquid introduced in the central area 240 can be placed. 3 When the adjustment disc 200 2 is rotated, it is connected to the adjustment disc 200 steel. , Carbides, or some parts can also be used hard polyether (polyphenyl 13 M275917 sulfide 'PPS), such as Meldin's polyfluorene imide, such as Celazole's polyphenylene well 嗤 (嗤 〇1 丫 6 6112 丨 111 丨 4 & 2 〇16,? 81), such as polyetheretherketone (PEEK) of human 1 * 1〇11, polytetrafluoro ethylene such as Teflon, polycarbonate, such as Delrin Acetal, or poiyetherimide (PEI), such as Ulterm. The material selected to form the adjusting plate 200 generally depends on the material constituting the polishing pad 32. The better surface characteristics of the blades 2 2 0 generally also depend on the constituent materials of the polishing pad 3 2. For example, when the constituent material of the polishing pad 32 is polyurethane (for example, a material supplied by Rodel under the trade name of IC1000 or icioio), the blades 22o need to be ground with the polishing material. All surfaces contacted by 塾 32 are preferably coated with diamond particles. The diamond particle coating may have a particle size in the range of 60 to 120. The diamond coating on the blades 220 may also be additionally treated to protect the diamond coating in low pH or corrosive environments. The surface characteristics of the blades 220 can also be adjusted to make the blades 220 more efficient during the adjustment process. For example, the blades 220 on the adjusting disk 200 may be formed and processed from broken silicon, and the surfaces of the blades 22 may be coated or converted into an amorphous diamond surface using a currently known surface treatment process. The present invention has been described according to some embodiments. However, the invention is not limited to the depicted and described embodiments. More appropriately, the scope of the new model is defined by the scope of the attached patent application. 14 M275917 [Brief description of the drawings] The new model will be explained here from the detailed description of the new model and accompanying drawings to be more comprehensively understood. However, these drawings should not be construed as limiting the new model to the specific embodiment shown and described herein. ○ The same component symbols are designated in different drawings to represent the same components. The first figure shows an adjuster head placed on a polishing pad to adjust the grinding pad with a dial. The second figure shows an adjusting disk, which includes a curved leaf blade placed at the bottom of the adjusting disk. Figure 3A shows the bottom view of the adjusting disk in Figure 2c Figure 3B shows the side view of the adjusting disk in Figure 2 along line 3B-3B from Figure 3A Figure 3 Each shows a side view of the implementation of the adjustment disk. Figure 4 shows the implementation of an adjustment disk with curved leaves containing tin-toothed edges. Figures 5 A-5C show an adjustment disk that includes a tool holder to support another tool. The figure 6 contains a channel to introduce the cleaning liquid into the dial near the center of the dial. [Key component symbol description] 25 Grinding station 30 Rotating platform 32 Grinding pad 40 Pad adjuster
15 M27591715 M275917
41 旋轉軸 42 手臂 46 調節頭 200 調節盤 201 、2 03 切線方向 210 基座結構 220 葉片 222 底面 224 正面 225 前緣 228 背面 229 嵌入工具支架 230 凹槽 231 開口 240 中心區域 245 研磨漿 275 清潔液體 280 通路 3 10 嵌入工具 311 接觸邊緣41 Rotating shaft 42 Arm 46 Adjusting head 200 Adjusting disk 201, 2 03 Tangent direction 210 Base structure 220 Blade 222 Bottom surface 224 Front face 225 Leading edge 228 Back face 229 Inserting tool holder 230 Groove 231 Opening 240 Central area 245 Grinding slurry 275 Cleaning liquid 280 Path 3 10 Insert tool 311 Contact edge
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93216297UTWM275917U (en) | 2004-10-13 | 2004-10-13 | Conditioner disk for use in chemical mechanical polishing |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93216297UTWM275917U (en) | 2004-10-13 | 2004-10-13 | Conditioner disk for use in chemical mechanical polishing |
| Publication Number | Publication Date |
|---|---|
| TWM275917Utrue TWM275917U (en) | 2005-09-21 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93216297UTWM275917U (en) | 2004-10-13 | 2004-10-13 | Conditioner disk for use in chemical mechanical polishing |
| Country | Link |
|---|---|
| TW (1) | TWM275917U (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI639486B (en)* | 2018-05-31 | 2018-11-01 | 國立清華大學 | Omni-directional integrated conditioner device |
| US10173297B2 (en) | 2016-08-01 | 2019-01-08 | Kinik Company Ltd. | Chemical mechanical polishing conditioner and method for manufacturing same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10173297B2 (en) | 2016-08-01 | 2019-01-08 | Kinik Company Ltd. | Chemical mechanical polishing conditioner and method for manufacturing same |
| TWI639486B (en)* | 2018-05-31 | 2018-11-01 | 國立清華大學 | Omni-directional integrated conditioner device |
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| Date | Code | Title | Description |
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| MK4K | Expiration of patent term of a granted utility model |