本發明的涉及晶圓搬運與冷卻技術有關，特別指一種一種晶圓腔室用的傳遞定位裝置及其晶圓腔室系統。The present invention relates to wafer handling and cooling technology, and in particular to a wafer chamber transfer positioning device and wafer chamber system.
電子組件之生產業界，尤其是構成更為精進之電子組件之半導體裝置之生產業界均糞望取得效率提昇。The electronic component manufacturing industry, especially the semiconductor devices that make up more advanced electronic components, is eager to achieve efficiency improvements.
通過採用群集工具同時使組件數目及組裝體之複雜度減為最低之方式使應用靜定加載互鎖室冷卻套之熱晶圓之生產率最適化，尤其可減免加載互鎖室內之任何活動/裝置。傳統方式係採用複數加載互鎖室模組以取得群集工具之較高生產率。此舉將增加裝備複雜度與最終用戶之成本。By using cluster tools, we optimize the throughput of hot wafers using static loadlock chamber cooling jackets while minimizing both the number of components and the complexity of the assembly. This eliminates any activity/devices within the loadlock chamber. Traditionally, multiple loadlock chamber modules have been used to achieve higher throughput in cluster tools, increasing setup complexity and end-user costs.
又以半導體中的晶圓的加工程式繁複且精密，大致上包括有：微影、蝕刻、擴散、離子佈植、薄膜...等，其中所述微影細部流程又包括有表面清洗、塗底、烘烤(包括軟烤與硬烤)、曝光、顯影...等；其中，由於晶圓在烘烤過程中會產生約1250度的高溫，其係必須等待冷卻作業後才能進行下一道加工程序。The semiconductor wafer processing process is complex and precise, generally including photolithography, etching, diffusion, ion implantation, thin film deposition, etc. The detailed photolithography process includes surface cleaning, coating, baking (including soft and hard baking), exposure, and development. Because the wafer reaches a high temperature of approximately 1250 degrees during the baking process, it must wait for cooling before proceeding to the next processing step.
在半導體製備過程中，隨著對產量及良率與日漸增的需求，而發展出高度專業化與自動化的系統來傳遞晶圓。晶圓通常儲存在卡匣(Cassette)內，且根據不同制程，例如濺鍍(Sputtering)制程、化學氣相沉積(Chemical Vapor Deposition)制程、微影(Photolithography)制程、或蝕刻制程、化學電鍍(ECP)制程、化學機械研磨(CMP)制程等，需不同反應室或反應槽。而在各個卡匣與制程反應室間，便需使用晶圓傳遞模組(Robot)來傳遞晶圓。Increasing demands for throughput and yield in the semiconductor manufacturing process have necessitated the development of highly specialized and automated systems for wafer transfer. Wafers are typically stored in cassettes, and different processes, such as sputtering, chemical vapor deposition, photolithography, etching, electrochemical plating (ECP), and chemical mechanical polishing (CMP), require different reaction chambers or tanks. Wafer transfer robots are used to transport wafers between cassettes and process chambers.
然而，高溫的晶圓需要快速冷卻以進行蝕刻工藝、清潔(Cleaning)工藝或去除(Removal)工藝。並且，經過高溫工藝後的、沉積了電介質或金屬薄膜的矽晶圓在工藝過程中會受到溫度變化的影響而發生變形，而通常經過薄膜工藝後冷卻的晶圓會變形為凹形(concave)或凸形(convex)。因此，需要有通過真空機械手將晶圓乘載移動至另一腔室冷卻，但是現有的真空機械手端末端的晶圓乘載件往往無法有效地承受晶圓傳輸環境的高真空度與高溫。However, high-temperature wafers require rapid cooling to proceed with etching, cleaning, or removal processes. Furthermore, silicon wafers deposited with dielectric or metal films undergoing high-temperature processes are subject to temperature fluctuations and deformation during the process. Typically, wafers cooled after thin-film processing will deform into a concave or convex shape. Therefore, a vacuum robot is required to transport the wafers to another chamber for cooling. However, the wafer carriers at the end of existing vacuum robots are often unable to effectively withstand the high vacuum and high temperatures of the wafer transfer environment.
另外，半導體製造過程中，乾法刻蝕設備中一般都會有真空傳輸系統(VTM)，在真空傳輸系統中會配置有傳送導航系統(TNS)，傳送導航系統可用於檢測晶圓偏移量。然而，目前傳送導航系統只能檢測晶圓的偏移量，無法全面檢測晶圓是否破損。當破損的晶圓進入真空傳輸系統時，會導致污染傳輸環境(transfer mode)。Furthermore, during the semiconductor manufacturing process, dry etching equipment typically includes a vacuum transport system (VTM), which is equipped with a transfer navigation system (TNS). This system can detect wafer offset. However, current TNSs can only detect wafer offset and cannot fully detect wafer damage. When damaged wafers enter the vacuum transport system, they contaminate the transfer environment (transfer mode).
關於現有技術針對晶圓圓心及缺口(切邊)檢測的方法存在如下的一些不足或者局限性：The existing methods for detecting wafer center and notch (cut edge) have the following deficiencies or limitations:
1.機械式圓心對準由於接觸滾軸與矽晶圓邊緣接觸，一方面可能污染矽晶圓，另一方面在定位時滾軸可能使得矽晶圓變形。1. Mechanical center alignment involves contact between the contact roller and the edge of the silicon wafer, which can contaminate the wafer and deform the wafer during positioning.
2.採用多個光學感測器，增加設備成本。2. Using multiple optical sensors increases equipment costs.
3.圓心和缺口(切邊)檢測的方法過於簡單，精度不高。要麼需要多次重複的操作，要麼僅利用了離散的少數幾個特殊的採樣點，計算的精度受單個採樣點誤差的干擾很大，不能充分的利用全部的採樣資料。3. The center and notch (cut edge) detection methods are overly simple and lack high accuracy. They either require repeated operations or utilize only a few discrete, specific sampling points. The accuracy of the calculation is significantly affected by the error of a single sampling point, and the full utilization of the sampled data is not achieved.
4.設備或者方法的局限性，不能適用當前IC工藝的需要，如僅適用于切邊或者“V”形缺口的檢測，不適用於圓弧缺口矽晶圓的檢測。4. The limitations of the equipment or methods make them unsuitable for current IC process requirements. For example, they are only suitable for inspecting cut edges or "V"-shaped notches, but not for inspecting arc-shaped notched silicon wafers.
因此，如何提供一種有效地承受晶圓傳輸環境的高真空度與高溫的晶圓移轉設備，以及能夠減少由於晶圓偏移導致的晶圓損傷，以解決現有技術中所存在的上述問題實屬必要。Therefore, it is necessary to provide a wafer transfer device that can effectively withstand the high vacuum and high temperature of the wafer transfer environment and reduce wafer damage caused by wafer shifting to solve the above-mentioned problems existing in the existing technology.
有鑑於上述缺點，發明人乃針對該等缺點研究改進之道，終於有本發明產生。In view of the above shortcomings, the inventors have researched ways to improve these shortcomings, and finally came up with the present invention.
本發明之主要目的在於提供一種晶圓腔室用的傳遞定位裝置及其晶圓腔室系統，其係能檢測晶圓被承載時的位置是否偏移，降低晶圓位置偏移導致的刮傷和碰撞風險，同時，更具有可有效提高半導體設備的空間利用率及產能效率。The primary objective of this invention is to provide a transfer positioning device for a wafer chamber and its associated wafer chamber system. These devices can detect whether wafers are misaligned while being loaded, reducing the risk of scratches and collisions caused by wafer misalignment. Furthermore, they can effectively improve the space utilization and productivity of semiconductor equipment.
一種晶圓腔室用的傳遞定位裝置，其係裝設一晶圓腔室系統，晶圓腔室用的傳遞定位裝置於包括有一晶圓傳遞模組及一晶圓轉動定位模組，晶圓傳遞模組包括有：一驅動裝置，其係設置於晶圓腔室系統；一連接臂組件，其係一端被配置轉動連接於驅動裝置；一晶圓支撐件，其係由陶瓷材質所構成，晶圓支撐件連接連接臂組件的另一端，且晶圓支撐件係具有一主體及至少一支撐臂，主體一側的係呈可拆分地連接連接臂組件，另一側連接支撐臂，支撐臂一側表面設置有至少一對應晶圓外緣的限位槽；及晶圓轉動定位模組，其係鄰境位於晶圓傳遞模組的一側，且晶圓傳遞模組包含有：一晶圓旋轉器，其係用於使一晶圓沿一定向進行轉動；一雷射模組，其係鄰設於設晶圓旋轉器的一側，且雷射模組係包括一發射端及一接收端，發射端對應接收端，且晶圓位於發射端與接收端之間；一控制模組，其係電性連接晶圓旋轉器與雷射模組，驅動裝置係電性連接控制模組，驅動裝置位於晶圓旋轉器的一側，而晶圓旋轉器位於雷射模組與驅動裝置之間。A wafer chamber transfer and positioning device is provided. The wafer chamber transfer and positioning device includes a wafer transfer module and a wafer rotation and positioning module. The wafer transfer module includes: a drive device disposed in the wafer chamber system; a connecting arm assembly, one end of which is rotatably connected to the drive device; and a wafer support member made of ceramic material. The wafer support member is connected to the other end of the connecting arm assembly. The wafer support member has a main body and at least one support arm. One side of the main body is detachably connected to the connecting arm assembly, and the other side is connected to the support arm. One side of the support arm is provided with a surface having a plurality of slits. At least one limiting groove corresponding to the outer edge of the wafer; and a wafer rotation and positioning module, which is located adjacent to one side of the wafer transfer module. The wafer transfer module includes: a wafer rotator, which is used to rotate a wafer in a certain direction; a laser module, which is located adjacent to one side of the wafer rotator. The laser module includes a transmitter and a receiver, the transmitter corresponding to the receiver, and the wafer is located between the transmitter and the receiver; a control module, which is electrically connected to the wafer rotator and the laser module; a drive device, which is electrically connected to the control module, is located on one side of the wafer rotator, and the wafer rotator is located between the laser module and the drive device.
一種晶圓腔室系統，其係包括有：一晶圓腔室，其係包括有一負載腔室、一定位腔室及一冷卻腔室，定位腔室及冷卻腔室分別與負載腔室相連通；一傳遞定位裝置，其係位於定位腔室；及一晶圓冷卻裝置，其係位於冷卻腔室，晶圓冷卻裝置其係包含有：一冷卻盤，其係包含有一盤體與複數導熱凸點，盤體內部設置有至少一冷卻流道，冷卻流道一端為一進入口，另一端為輸出口，冷卻流道被配置供冷卻氣體或冷卻液流通，又，盤體外部的冷卻面更設置有多個穿孔，穿孔貫穿盤體，另，導熱凸點，其係平均分佈於盤體的一側表面；一升降模組，其係電性連接傳遞定位裝置中的控制模組，且升降模組具有一升降單元，升降單元的一端對應穿孔連接有複數頂升件，頂升件係呈可活動地分別穿設於穿孔。A wafer chamber system includes: a wafer chamber including a load chamber, a positioning chamber, and a cooling chamber, wherein the positioning chamber and the cooling chamber are respectively connected to the load chamber; a transfer positioning device located in the positioning chamber; and a wafer cooling device located in the cooling chamber, wherein the wafer cooling device includes: a cooling plate including a plate body and a plurality of heat-conducting bumps, wherein at least one cooling channel is provided inside the plate body, and one end of the cooling channel is The cooling channel is configured to allow cooling gas or liquid to circulate, with one end serving as an inlet and the other as an outlet. The cooling surface on the outside of the disk is further provided with multiple perforations that penetrate the disk. Furthermore, thermally conductive bumps are evenly distributed on one side of the disk. A lifting module is electrically connected to the control module in the positioning device. The lifting module includes a lifting unit. Multiple lifting elements are connected to one end of the lifting unit, corresponding to the perforations. The lifting elements are movably mounted in the perforations.
本發明之一種晶圓腔室用的傳遞定位裝置及其晶圓腔室系統，首先，晶圓傳遞模組主要是通過晶圓支撐件係由陶瓷材質所構成，以供有效地承受晶圓傳輸環境的高真空度與高溫的晶圓移轉工序，且利用晶圓支撐件上對應晶圓外緣的限位槽及支撐臂，以供穩固支撐移動過程中的晶圓，以達地實現使得晶圓的受力更為均勻，防止晶圓破片，同時更能避免傳輸時，晶圓移動甚至被甩出的風險；另外，本發明更能適用於壓力為0~1000mbar，晶圓腔室系統內晶圓溫度為室溫~600℃，有效提升生產效率，並能夠適用於光電與半導體產業相關晶片薄膜沉積製程。The present invention relates to a transfer positioning device for a wafer chamber and a wafer chamber system thereof. First, the wafer transfer module is mainly composed of a ceramic material through a wafer support member to effectively withstand the high vacuum and high temperature wafer transfer process of the wafer transfer environment, and the limiting grooves and support arms on the wafer support member corresponding to the outer edge of the wafer are used to stably support the wafer during the transfer process. This achieves more uniform force distribution across the wafer, preventing wafer breakage and minimizing the risk of wafer movement or even ejection during transport. Furthermore, the present invention is applicable to pressures ranging from 0 to 1000 mbar and wafer temperatures within the wafer chamber system ranging from room temperature to 600°C, effectively improving production efficiency and making it suitable for wafer thin film deposition processes in the optoelectronics and semiconductor industries.
其次，本發明的晶圓轉動定位模組於晶圓旋轉器旋轉晶圓時，每個旋轉週期中晶圓的外週緣開始觸碰發射端發出的光束的第一區域，及，晶圓最後觸碰發射端發出的光束的第二區域；控制模組採集的第一區域及第二區域，並根據所述第一區域與所述第二區域的差值絕對值的最小值及晶圓旋轉器的旋轉速度計算出晶圓的偏移中點位置及偏移量；藉此，本發明係能夠按照晶圓預對準精度和時間的要求，並通過旋轉和移動來實現晶圓的圓心和缺口定位，完成晶圓的圓心對準和缺口定位，可大大提高預對準精度。Secondly, the wafer rotation and positioning module of the present invention uses a wafer rotator to rotate the wafer. During each rotation cycle, the outer periphery of the wafer initially contacts the first region of the light beam emitted by the emitter, and finally contacts the second region of the light beam emitted by the emitter. The control module collects the data from the first and second regions and calculates the wafer's offset midpoint position and offset amount based on the minimum absolute difference between the first and second regions and the rotational speed of the wafer rotator. This allows the present invention to achieve wafer center and notch positioning through rotation and movement, meeting wafer pre-alignment accuracy and time requirements, significantly improving pre-alignment accuracy.
最後，本發明的晶圓冷卻裝置主要是通過得複數導熱凸點能夠將經過高溫加工的晶圓放置在冷卻結構上進行冷卻，同時再搭配盤體內部設置的冷卻流道，以供快速完成對晶圓的冷卻散熱，從而就能夠快速對晶圓進行輸送，有效確保了晶圓的輸送效率，有利於提高晶圓生產過程中整體的工作效率。Finally, the wafer cooling device of the present invention primarily utilizes multiple thermally conductive bumps to place high-temperature processed wafers on a cooling structure for cooling. Combined with cooling channels within the plate, this rapidly cools and dissipates heat from the wafers, enabling rapid wafer transport and effectively ensuring efficient wafer transport, thereby improving overall efficiency during the wafer production process.
1000:晶圓腔室系統1000: Wafer Chamber System
1001:晶圓腔室1001: Wafer Chamber
10011:負載腔室10011: Load Chamber
10012:定位腔室10012: Positioning Chamber
10013:冷卻腔室10013: Cooling Chamber
100:傳遞定位裝置100: Transmitting positioning device
10:晶圓傳遞模組10: Wafer transfer module
11:驅動裝置11: Drive device
12:連接臂組件12: Connecting arm assembly
121:第一連接臂121: First connecting arm
122:第二連接臂122: Second connecting arm
123:第三連接臂123: Third connecting arm
1231:樞接凹槽1231: Joint groove
1232:組接件1232: Components
1233:組接凹口1233: Assembly notch
1234:檔塊1234:Block
13:晶圓支撐件13: Wafer support
131:主體131: Subject
132:支撐臂132: Support Arm
1321:限位槽1321: Limiting slot
1322:支撐凸點1322: Support bumps
20:晶圓轉動定位模組20: Wafer rotation positioning module
21:晶圓旋轉器21: Wafer Rotator
22:雷射模組22: Laser Module
221:發射端221: Transmitter
222:接收端222: Receiver
23:控制模組23: Control Module
30:晶圓冷卻裝置30: Wafer cooling device
31:冷卻盤31: Cooling Plate
32:導熱凸點32: Thermal bumps
33:盤體33: Plate
331:冷卻流道331: Cooling channel
3311:進入口3311:Entrance
3312:輸出口3312: Export
332:冷卻面332: Cold Noodles
3321:支撐區域3321: Support area
3322:對流區域3322: Convection Zone
333:凹槽333: Groove
34:穿孔34: Perforation
35:升降模組35: Lifting module
351:升降單元351: Lifting unit
352:頂升件352: Lifting Parts
36:晶圓限位件36: Wafer stopper
361:開口361: Opening
A:晶圓A: Wafer
B:光束B: Beam
B1:第一區域B1: Area 1
B2:第二區域B2: Second Area
圖1係本發明第一實施例中顯示晶圓腔室系統的立體圖。Figure 1 is a perspective view of a wafer chamber system according to the first embodiment of the present invention.
圖2係本發明第一實施例中顯示晶圓腔室系統的系統方塊圖。Figure 2 is a system block diagram showing the wafer chamber system in the first embodiment of the present invention.
圖3係本發明第一實施例中顯示晶圓傳遞模組的立體圖。Figure 3 is a perspective view of the wafer transfer module in the first embodiment of the present invention.
圖4係本發明第一實施例中顯示連接臂組件與晶圓支撐件的組合立體圖。Figure 4 is a perspective view showing the assembly of the connecting arm assembly and the wafer support in the first embodiment of the present invention.
圖5係本發明第一實施例中顯示晶圓支撐件的立體圖。Figure 5 is a perspective view showing the wafer support member in the first embodiment of the present invention.
圖6係本發明第一實施例中顯示晶圓轉動定位模組的裝置架構示意圖。Figure 6 is a schematic diagram showing the device architecture of the wafer rotation and positioning module in the first embodiment of the present invention.
圖7係本發明第一實施例中顯示晶圓轉動定位模組的剖面示意圖。Figure 7 is a schematic cross-sectional view of the wafer rotation and positioning module in the first embodiment of the present invention.
圖8係本發明第一實施例中顯示晶圓冷卻裝置的立體圖。Figure 8 is a perspective view of the wafer cooling device according to the first embodiment of the present invention.
圖9係本發明第一實施例中顯示晶圓冷卻裝置的分解立體圖。Figure 9 is an exploded perspective view of the wafer cooling device according to the first embodiment of the present invention.
圖10係本發明第一實施例中顯示晶圓冷卻裝置的分解立體圖。Figure 10 is an exploded perspective view of the wafer cooling device according to the first embodiment of the present invention.
圖11係本發明第一實施例中顯示晶圓冷卻裝置的俯視圖。Figure 11 is a top view of the wafer cooling device according to the first embodiment of the present invention.
圖12係本發明第一實施例中顯示晶圓冷卻裝置的剖視圖。Figure 12 is a cross-sectional view showing the wafer cooling device in the first embodiment of the present invention.
圖13係本發明第一實施例中顯示晶圓傳遞模組的使用狀態示意圖。Figure 13 is a schematic diagram showing the use of the wafer transfer module in the first embodiment of the present invention.
圖14係本發明第一實施例中顯示晶圓轉動定位模組的使用狀態示意圖。Figure 14 is a schematic diagram showing the use of the wafer rotation and positioning module in the first embodiment of the present invention.
圖15係本發明第二實施例中顯示晶圓傳遞模組的立體圖。Figure 15 is a perspective view of the wafer transfer module in the second embodiment of the present invention.
請參閱圖1及圖2，並搭配圖3、圖6及圖7所示，其係揭露有一種一種晶圓腔室用的傳遞定位裝置100及其晶圓腔室系統1000，並包含有：一晶圓腔室1001，其係包括有一負載腔室10011、一定位腔室10012及一冷卻腔室10013，定位腔室10012及冷卻腔室10013分別與負載腔室10011相連通。Please refer to Figures 1 and 2, along with Figures 3, 6, and 7, which illustrate a wafer chamber transfer positioning device 100 and a wafer chamber system 1000. These devices include:A wafer chamber 1001, which includes a load chamber 10011, a positioning chamber 10012, and a cooling chamber 10013. The positioning chamber 10012 and the cooling chamber 10013 are each connected to the load chamber 10011.
一傳遞定位裝置100，其係位於定位腔室10012，傳遞定位裝置100係包含有：一晶圓傳遞模組10及一晶圓轉動定位模組20。A transfer positioning device 100 is located in the positioning chamber 10012. The transfer positioning device 100 includes: a wafer transfer module 10 and a wafer rotation positioning module 20.
其中，如圖3至圖5所示，晶圓傳遞模組10位於負載腔室10011，並包括有：一驅動裝置11，其係設置於晶圓腔室系統1000；一連接臂組件12，其係一端被配置轉動連接於驅動裝置11；一晶圓支撐件13，其係由陶瓷材質所構成，晶圓支撐件13連接連接臂組件12的另一端，且晶圓支撐件13係具有一主體131及至少一支撐臂132，主體131一側的係呈可拆分地連接連接臂組件12，另一側連接支撐臂132，支撐臂132一側表面設置有至少一對應晶圓A外緣的限位槽1321。於本實施例中，驅動裝置11連動連接臂組件12，使晶圓支撐件13於晶圓腔室系統1000中的一負載腔室10011與一定位腔室10012之間的位移，負載腔室10011的適用壓力為0至1000毫巴，且負載腔室10011的製程溫度為0至600℃。As shown in Figures 3 to 5, the wafer transfer module 10 is located in the load chamber 10011 and includes: a driving device 11, which is installed in the wafer chamber system 1000; a connecting arm assembly 12, one end of which is configured to be rotatably connected to the driving device 11; a wafer support member 13, which is made of ceramic material. The wafer support member 13 is connected to the other end of the connecting arm assembly 12, and the wafer support member 13 has a main body 131 and at least one supporting arm 132. One side of the main body 131 is detachably connected to the connecting arm assembly 12, and the other side is connected to the supporting arm 132. The supporting arm 132 has at least one limiting groove 1321 corresponding to the outer edge of the wafer A on one side surface. In this embodiment, the drive device 11 links the connecting arm assembly 12 to displace the wafer support 13 between a load chamber 10011 and a positioning chamber 10012 in the wafer chamber system 1000. The applicable pressure of the load chamber 10011 is 0 to 1000 mbar, and the process temperature of the load chamber 10011 is 0 to 600°C.
需進一步說明的是，連接臂組件12包含有一第一連接臂121、一第二連接臂122及一第三連接臂123，第一連接臂121一端樞接驅動裝置11，另一端樞接第二連接臂122，第二連接臂122樞接第三連接臂123，第三連接臂123連接晶圓支撐件13，又，請繼續參閱圖4所示，第三連接臂123與晶圓支撐件13之間通過有一組接件1232連接，組接件1232的兩側分別設置有一組接凹口1233，且組接件1232的組接凹口1233之間具有一檔塊1234，以使組接件1232的二組接凹口1233能夠供作為晶圓支撐件13連接第三連接臂123的元件；另外，主體131與支撐臂132上間隔設置有至少二呈弧狀的限位槽1321，且支撐臂132對應用以支撐晶圓的一側面設置有多個支撐凸點1322，支撐凸點1322可讓晶圓與支撐臂132之間形成有散熱的空間，又，第三連接臂123連接第二連接臂122的一端的連接側面凹設有一樞接凹槽1231，且第三連接臂123於連接側面的另一側面呈階梯狀，階梯狀的結構設計用途在於減少第二連接臂122與第三連接臂123之間厚度，以增加在晶圓腔室系統1000內的傳輸移動的空間。It should be further explained that the connecting arm assembly 12 includes a first connecting arm 121, a second connecting arm 122 and a third connecting arm 123. One end of the first connecting arm 121 is pivotally connected to the driving device 11, and the other end is pivotally connected to the second connecting arm 122. The second connecting arm 122 is pivotally connected to the third connecting arm 123. The third connecting arm 123 is connected to the wafer support 13. Please continue to refer to FIG4 , the third connecting arm 123 is connected to the wafer support 13 via a connecting member 1232. A connecting recess 1233 is provided on each side of the connecting member 1232, and a stopper 1234 is provided between the connecting recesses 1233 of the connecting member 1232 so that the two connecting recesses 1233 of the connecting member 1232 can serve as a wafer. The supporting member 13 is connected to the element of the third connecting arm 123; in addition, at least two arc-shaped limiting grooves 1321 are provided on the main body 131 and the supporting arm 132, and a plurality of supporting protrusions 1322 are provided on one side of the supporting arm 132 corresponding to the side for supporting the wafer. The supporting protrusions 1322 can form a heat dissipation space between the wafer and the supporting arm 132. A hinge groove 1231 is recessed on the connecting side of the third connecting arm 123 where it connects to the second connecting arm 122. The other side of the third connecting arm 123 is stepped. This stair-shaped structure is designed to reduce the thickness between the second connecting arm 122 and the third connecting arm 123, thereby increasing the space for transport and movement within the wafer chamber system 1000.
其中，如圖6至圖7所示，晶圓轉動定位模組20位於定位腔室10012，其係鄰境位於晶圓傳遞模組10的一側，且晶圓傳遞模組10包含有：一晶圓旋轉器21，其係用於使一晶圓沿一定向進行轉動；一雷射模組22，其係鄰設於設晶圓旋轉器21的一側，且雷射模組22係包括一發射端221及一接收端222，發射端221對應接收端222，且晶圓位於發射端221與接收端222之間；一控制模組23，其係電性連接晶圓旋轉器21與雷射模組22，驅動裝置11係電性連接控制模組23，驅動裝置11位於晶圓旋轉器21的一側，而晶圓旋轉器21位於雷射模組22與驅動裝置11之間。於本實施例中，晶圓旋轉器21的供晶圓A定位的一端位於定位腔室10012內部，定位腔室10012外部分別設置有雷射模組22，雷射模組22的發射端221與接收端222分別位於定位腔室10012的上下側，且發射端221與接收端222可朝定位腔室10012內部發射與接收光束B，又，控制模組23基於所述偏移量及晶圓A的偏移中點位置重新抓取晶圓A外周緣，並沿偏移中點位置與晶圓A的偏移點的連線方向補償的偏移量後傳送至晶圓旋轉器21與驅動裝置11。於本實施例中，於本實施例中，控制模組23可以為但不限於驅動電路板、PLC控制模組…等可用於控制升降單元351的運作的電子元件或裝置。As shown in Figures 6 and 7, the wafer rotation and positioning module 20 is located in the positioning chamber 10012, adjacent to one side of the wafer transfer module 10. The wafer transfer module 10 includes: a wafer rotator 21, which is used to rotate a wafer in a certain direction; a laser module 22, which is located adjacent to one side of the wafer rotator 21, and includes an emitting end 221 and a laser beam. A receiving end 222, the transmitting end 221 corresponds to the receiving end 222, and the wafer is located between the transmitting end 221 and the receiving end 222; a control module 23, which is electrically connected to the wafer rotator 21 and the laser module 22, and the driving device 11 is electrically connected to the control module 23. The driving device 11 is located on one side of the wafer rotator 21, and the wafer rotator 21 is located between the laser module 22 and the driving device 11. In this embodiment, one end of the wafer rotator 21 for positioning wafer A is located inside the positioning chamber 10012, and a laser module 22 is respectively provided outside the positioning chamber 10012. The emitting end 221 and the receiving end 222 of the laser module 22 are respectively located on the upper and lower sides of the positioning chamber 10012, and the emitting end 221 and the receiving end 222 can emit and receive the light beam B toward the inside of the positioning chamber 10012. In addition, the control module 23 re-grabs the outer periphery of wafer A based on the offset amount and the offset midpoint position of wafer A, and transmits the offset amount compensated along the direction of the line connecting the offset midpoint position and the offset point of wafer A to the wafer rotator 21 and the driving device 11. In this embodiment, the control module 23 may be, but is not limited to, a drive circuit board, a PLC control module, or other electronic components or devices that can be used to control the operation of the lifting unit 351.
一晶圓冷卻裝置30，如圖8至圖12所示，其係位於冷卻腔室10013，並包含有：一冷卻盤31，其係包含有一盤體33與複數導熱凸點32，盤體33內部設置有至少一冷卻流道331，冷卻流道331一端為一進入口3311，另一端為輸出口3312，冷卻流道331被配置供冷卻氣體或冷卻液流通，又，盤體33外部的冷卻面332更設置有多個穿孔34，穿孔34貫穿盤體33，另，導熱凸點32，其係平均分佈於盤體33的一側表面；一升降模組35，其係電性連接傳遞定位裝置100中的控制模組23，且升降模組35具有一升降單元351，升降單元351的一端對應穿孔34連接有複數頂升件352，頂升件352係呈可活動地分別穿設於穿孔34；一晶圓限位件36，晶圓限位件36對應組接於冷卻盤31的冷卻面332，且晶圓限位件36環繞設於冷卻盤31的冷卻面332周緣，晶圓限位件36更設有一開口361，開口361被配置供晶圓A進入放置於冷卻面332上。A wafer cooling device 30, as shown in Figures 8 to 12, is located in the cooling chamber 10013 and includes: a cooling plate 31, which includes a plate body 33 and a plurality of heat-conducting bumps 32. The plate body 33 has at least one cooling channel 331 disposed therein. The cooling channel 331 has an inlet 3311 at one end and an outlet 3312 at the other end. The cooling channel 331 is configured to allow cooling gas or cooling liquid to flow. Furthermore, a cooling surface 332 on the outside of the plate body 33 is further provided with a plurality of through-holes 34 that penetrate the plate body 33. Furthermore, the heat-conducting bumps 32 are evenly distributed on one side of the plate body 33. A lifting module 35 is electrically connected to the control module 23 in the transmission positioning device 100. The lifting module 35 comprises a lifting unit 351. One end of the lifting unit 351 is connected to a plurality of lifting members 352 corresponding to the through-hole 34. The lifting members 352 are movably inserted through the through-hole 34. A wafer stopper 36 is assembled to the cooling surface 332 of the cooling plate 31 and surrounds the cooling surface 332 of the cooling plate 31. The wafer stopper 36 further has an opening 361. The opening 361 is configured to allow the wafer A to enter and be placed on the cooling surface 332.
於本實施例中，如圖11與圖12所示，冷卻盤31係為高熱傳導係數金屬材質所構成，冷卻盤31呈圓盤狀，且冷卻面332均分有三塊支撐區域3321及三塊對流區域3322，其中支撐區域3321分別具有導熱凸點32及至少一穿孔34，且導熱凸點32呈三角狀的方式平均均佈設置於支撐區域3321，每兩個支撐區域3321之間有一對流區域3322，支撐區域3321凹設有多個凹槽333，凹槽333分別組設有導熱凸點32，導熱凸點32的頂端至冷卻面332之距離為0.3至3mm之間，其距離可以使形成對晶圓A的多點支撐，由於晶圓A不與冷卻盤31不直接接觸，從而可避免晶圓A與冷卻盤31直接接觸造成的急速降溫冷縮破碎報廢事故；值得一提的是，由於導熱凸點32可讓晶圓A與冷卻盤31之間形成有一熱對流的空間，以供冷卻盤31對晶圓A進行散熱跟降溫。In this embodiment, as shown in FIG11 and FIG12, the cooling plate 31 is made of a metal material with a high thermal conductivity coefficient. The cooling plate 31 is in the shape of a disk, and the cooling surface 332 is evenly divided into three supporting areas 3321 and three convection areas 3322. The supporting areas 3321 each have a heat-conducting protrusion 32 and at least one through-hole 34. The heat-conducting protrusions 32 are evenly distributed in the supporting areas 3321 in a triangular shape. There is a convection area 3322 between every two supporting areas 3321. The supporting area 3321 is concave with a plurality of grooves. 333. Each recess 333 is equipped with a thermally conductive bump 32. The distance from the top of the thermally conductive bump 32 to the cooling surface 332 is between 0.3 and 3 mm. This distance provides multi-point support for wafer A. Since wafer A does not directly contact the cooling plate 31, this prevents the wafer A from rapidly cooling, shrinking, and breaking due to direct contact with the cooling plate 31, which could lead to scrap. Notably, the thermally conductive bump 32 creates a convection space between wafer A and the cooling plate 31, allowing the cooling plate 31 to dissipate heat and cool wafer A.
為供進一步瞭解本發明構造特徵、運用技術手段及所預期達成之功效，茲將本發明使用方式加以敘述，相信當可由此而對本發明有更深入且具體之瞭解，如下所述：請參閱圖3、圖4、圖5及圖13所示，其係為本發明第一實施例中顯示晶圓傳遞模組10的立體圖、顯示連接臂組件12與晶圓支撐件13的組合立體圖、顯示晶圓支撐件13的立體圖與使用狀態示意圖，本發明的晶圓傳遞模組10主要是通過晶圓支撐件13係由陶瓷材質所構成，並被配置供驅動裝置11連動連接臂組件12，使晶圓支撐件13於晶圓腔室系統1000中的一負載腔室10011與一負載腔室10011之間的位移，又，由於晶圓支撐件13係由陶瓷材質所構成，可以有效地承受晶圓傳輸環境的高真空度與高溫的晶圓A移轉工序，且利用晶圓支撐件13上對應晶圓A外緣的限位槽1321及支撐臂132，以供穩固支撐移動過程中的晶圓A，以達地實現使得晶圓A的受力更為均勻，防止晶圓A破片，同時更能避免傳輸時，晶圓A移動甚至被甩出的風險。另外，本發明更能適用於壓力為0~1000mbar，晶圓腔室系統1000內晶圓溫度為室溫~600℃，有效提升生產效率，並能夠適用於光電與半導體產業相關晶片薄膜沉積製程。In order to further understand the structural features, applied technical means and expected effects of the present invention, the use of the present invention is described. It is believed that this will provide a deeper and more specific understanding of the present invention, as described below: Please refer to Figures 3, 4, 5 and 13, which are three-dimensional diagrams showing the wafer transfer module 10, a three-dimensional diagram showing the combination of the connecting arm assembly 12 and the wafer support 13, and a three-dimensional diagram showing the wafer support 13 and a schematic diagram of the use state in the first embodiment of the present invention. The wafer transfer module 10 of the present invention is mainly composed of a ceramic material through the wafer support 13, and is configured for the drive device 11. The linked connecting arm assembly 12 enables the wafer support 13 to be displaced between a load chamber 10011 and another load chamber 10011 in the wafer chamber system 1000. Furthermore, because the wafer support 13 is made of ceramic material, it can effectively withstand the high vacuum and high temperature wafer A transfer process in the wafer transfer environment. Furthermore, the limiting grooves 1321 on the wafer support 13 corresponding to the outer edge of the wafer A and the support arms 132 are utilized to stably support the wafer A during the transfer process, thereby achieving a more uniform force on the wafer A, preventing the wafer A from breaking, and at the same time, avoiding the risk of the wafer A moving or even being thrown out during transfer. Furthermore, the present invention is applicable to pressures ranging from 0 to 1000 mbar, with wafer temperatures within the wafer chamber system ranging from room temperature to 600°C, effectively improving production efficiency and being suitable for wafer thin film deposition processes related to the optoelectronics and semiconductor industries.
請繼續參閱圖6與圖14所示，其係為本發明第一實施例中顯示晶圓轉動定位模組20的裝置架構示意圖與使用狀態示意圖；本發明的晶圓轉動定位裝置，其主要於晶圓旋轉器21旋轉晶圓時，每個旋轉週期中晶圓A的外週緣開始觸碰發射端221發出的光束B的第一區域B1，及，晶圓A最後觸碰發射端221發出的光束B的第二區域B2；控制模組23採集的第一區域B1及第二區域B2，並根據所述第一區域B1與所述第二區域B2的差值絕對值的最小值及晶圓旋轉器21的旋轉速度計算出晶圓A的偏移中點位置及偏移量；需進一步說明的是，控制模組23基於所述偏移量及晶圓A的偏移中點位置重新抓取晶圓A外周緣，並沿偏移中點位置與晶圓A的偏移點的連線方向補償的偏移量後傳送至晶圓旋轉器21與連接臂組件12。藉此，本發明係能夠按照晶圓A預對準精度和時間的要求，並通過旋轉和移動來實現晶圓A的圓心和缺口定位，完成晶圓A的圓心對準和缺口定位，可大大提高預對準精度。Please continue to refer to FIG6 and FIG14, which are schematic diagrams showing the device structure and the use status of the wafer rotation positioning module 20 in the first embodiment of the present invention; the wafer rotation positioning device of the present invention mainly rotates the wafer when the wafer rotator 21 rotates the wafer. In each rotation cycle, the outer periphery of the wafer A starts to touch the first area B1 of the light beam B emitted by the emission end 221, and the wafer A finally touches the second area B2 of the light beam B emitted by the emission end 221; the control module 23 collects the first The control module 23 re-grasps the outer periphery of wafer A based on the offset value and the offset midpoint of wafer A, and transmits the compensated offset along the line connecting the offset midpoint and the offset point of wafer A to the wafer rotator 21 and the connecting arm assembly 12. The present invention thus achieves center and notch positioning of wafer A through rotation and movement, meeting the precision and time requirements for pre-alignment of wafer A. This completes center alignment and notch positioning of wafer A, significantly improving pre-alignment accuracy.
請接續參閱圖9、圖10、圖11及圖12所示，其係為本發明第一實施例顯示晶圓冷卻裝置30的分解立體圖、分解立體圖、俯視圖、剖視圖；本發明之晶圓冷卻裝置30，其主要是通過得複數導熱凸點32能夠將經過高溫加工的晶圓A放置在冷卻結構上進行冷卻，同時再搭配盤體33內部設置的冷卻流道331，以供快速完成對晶圓A的冷卻散熱，從而就能夠快速對晶圓A進行輸送，有效確保了晶圓A的輸送效率，有利於提高晶圓A生產過程中整體的工作效率；於使用狀態時，有晶圓A需要放置在冷卻盤31模組上時，晶圓A可通過多個導熱凸點32形成對晶圓A的多點支撐，由於晶圓A不與低溫的盤體33不直接接觸，從而可避免晶圓A與低溫冷卻台直接接觸造成的急速降溫冷縮破碎報廢事故，另外，由於晶圓A不與盤體33無碰擦，可徹底避免晶圓A背面因盤體33造成的金屬沾汙。值得一提的是，經過高溫加工的晶圓A放置在冷卻盤31上後，多個導熱凸點32就可以將晶圓A架空在冷卻面332上方，晶圓A的熱量通過導熱凸點32的傳遞至冷卻盤31，冷卻盤31再與冷卻流道331內流動的冷卻水發生熱交換，以實現對晶圓A的冷卻降溫。而且冷卻水在密封的冷卻流道331內流動，確保冷卻效果良好，有效提高了冷卻效率，也不會發生冷卻水污染晶圓A的情況。另外，由於晶圓A被導熱凸點32架空，在確保晶圓A的熱量能夠快速向冷卻盤31傳遞的同時，還能夠減少晶圓A與冷卻面332接觸的面積，從而降低晶圓A被磨損的可能性。Please continue to refer to Figures 9, 10, 11 and 12, which are exploded perspective views, exploded perspective views, top views and cross-sectional views of the wafer cooling device 30 according to the first embodiment of the present invention. The wafer cooling device 30 of the present invention mainly uses a plurality of heat-conducting bumps 32 to place the wafer A processed at high temperature on the cooling structure for cooling, and is combined with a cooling channel 331 provided inside the plate 33 to quickly cool and dissipate heat from the wafer A, thereby enabling the wafer A to be transported quickly, effectively ensuring the heat dissipation of the wafer A. The efficient transport of wafer A helps improve the overall efficiency of the wafer A production process. When wafer A is placed on the cooling plate 31 module during use, multiple thermally conductive bumps 32 provide multi-point support for wafer A. Since wafer A does not directly contact the low-temperature plate 33, this prevents the wafer from rapidly cooling, shrinking, and breaking due to direct contact with the low-temperature cooling table. Furthermore, since wafer A does not rub against the plate 33, metal contamination of the back of wafer A by the plate 33 is completely avoided. It's worth noting that after high-temperature processing, wafer A is placed on cooling plate 31. Multiple thermally conductive bumps 32 suspend wafer A above cooling surface 332. Heat from wafer A is transferred to cooling plate 31 via thermally conductive bumps 32. This heat then exchanges heat with the cooling water flowing within cooling channels 331, effectively cooling wafer A. Furthermore, the cooling water flows within the sealed cooling channels 331, ensuring effective cooling and effectively improving cooling efficiency. It also prevents cooling water from contaminating wafer A. Furthermore, since wafer A is suspended by thermal bumps 32, while ensuring that heat from wafer A can be quickly transferred to cooling plate 31, it also reduces the contact area between wafer A and cooling surface 332, thereby reducing the possibility of wafer A being damaged.
請再參閱圖15所示，其係為本發明第二實施例中顯示晶圓傳遞模組10的立體圖，本實施例與第一實施例相較，其不同之處係在於傳遞定位裝置100包含有二連接臂組件12，以達到一組動力源即可控制二連接臂組件12動作進行，且由圖中可得知其結構緊湊並且實用性強，因此，本實施例相較於第一實施例更具備有較高的生產效率；值得一提的是，陶瓷材質可為非導電材料，諸如氧化鋁陶瓷，以使熱損失最小化。Please refer to Figure 15, which is a perspective view of the wafer transfer module 10 in the second embodiment of the present invention. Compared with the first embodiment, this embodiment differs in that the transfer positioning device 100 includes two connecting arm assemblies 12, so that a single power source can control the movement of the two connecting arm assemblies 12. As can be seen from the figure, its structure is compact and highly practical. Therefore, this embodiment has higher production efficiency than the first embodiment. It is worth noting that the ceramic material can be a non-conductive material, such as alumina ceramic, to minimize heat loss.
茲，再將本發明之特徵及其可達成之預期功效陳述如下：The features of the present invention and its expected effects are described below:
其一，晶圓支撐件13係由陶瓷材質所構成，以供有效地承受晶圓A傳輸環境的高真空度與高溫的晶圓A移轉工序，同時，本發明具有高效地實現晶圓A的轉載，即將晶圓A從任一放置位置處水準取出，並通過轉動改變方向，最後通過升降以及直線運動，將圓晶放置在另一位置處，實現自動化搬運及轉載，動作靈活度高，同時，可適應長時間工作，搬運效率得到顯著提升。First, the wafer support 13 is constructed of ceramic material to effectively withstand the high vacuum and high temperatures encountered during the wafer A transfer process. Furthermore, the present invention efficiently transfers wafers A, removing them horizontally from any placement location, changing their orientation through rotation, and finally placing them at another location through lifting and linear motion. This automated handling and transfer process offers high flexibility and can accommodate extended periods of operation, significantly improving handling efficiency.
其二，本發明通過雷射模組22的尋邊機制，可達自動識別晶圓A的偏移並自動矯正晶圓A的偏移位置，消除了晶圓A在初始位置偏移，機械手臂拖片、抓片偏移等需要人工處理的右機問題，有效提高了生產效率，同時，更能夠充分利用全部的採樣資料，對測量誤差有較強的抑制作用，同時，可檢測晶圓A被承載時的位置是否偏移，降低晶圓A位置偏移導致的刮傷和碰撞風險，提高生產效率。Secondly, the present invention utilizes the edge-finding mechanism of the laser module 22 to automatically identify and correct wafer A offsets. This eliminates issues such as wafer A offset at the initial position, robotic arm dragging, and wafer grabbing offsets that require manual processing, effectively improving production efficiency. Furthermore, it fully utilizes all sample data, effectively suppressing measurement errors. Furthermore, it can detect whether wafer A is offset while being carried, reducing the risk of scratches and collisions caused by wafer A offset, thereby improving production efficiency.
其三，本發明能夠將經過高溫加工的晶圓A放置在冷卻結構上進行冷卻，以快速完成對晶圓A的冷卻散熱，從而就能夠快速對晶圓A進行輸送，有效確保了晶圓A的輸送效率，有利於提高晶圓A生產過程中整體的工作效率。Third, the present invention can place wafers A, which have undergone high-temperature processing, on a cooling structure for cooling, rapidly cooling and dissipating the heat from the wafers A. This allows for rapid transport of the wafers A, effectively ensuring efficient transport of the wafers A and improving overall efficiency during the wafer A production process.
以上係藉由特定的具體實施例說明本發明之實施方式，所屬技術領域具有通常知識者可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。The above describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand the other advantages and effects of the present invention from the contents disclosed in this specification.
以上所述僅為本發明之較佳實施例，並非用以限定本發明之範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之專利範圍內。The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Any other equivalent changes or modifications that do not deviate from the spirit disclosed by the present invention should be included in the scope of the patent below.
1000:晶圓腔室系統1000: Wafer Chamber System
10011:負載腔室10011: Load Chamber
10012:定位腔室10012: Positioning Chamber
10013:冷卻腔室10013: Cooling Chamber
100:晶圓腔室用的傳遞定位裝置100: Transfer positioning device for wafer chamber
10:晶圓傳遞模組10: Wafer transfer module
20:晶圓轉動定位模組20: Wafer rotation positioning module
30:晶圓冷卻裝置30: Wafer cooling device
| Publication Number | Publication Date |
|---|---|
| TWI897566Btrue TWI897566B (en) | 2025-09-11 |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112599460A (en) | 2020-12-25 | 2021-04-02 | 上海谙邦半导体设备有限公司 | Pre-vacuum lock module, wafer transfer-in method and wafer transfer-out method |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112599460A (en) | 2020-12-25 | 2021-04-02 | 上海谙邦半导体设备有限公司 | Pre-vacuum lock module, wafer transfer-in method and wafer transfer-out method |
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