本發明係關於一種晶圓測試的技術領域，特別是關於一種高速、高頻及大功率的晶圓訊號量測裝置。The present invention relates to a technical field of wafer testing, and in particular to a high-speed, high-frequency and high-power wafer signal measurement device.
隨著科技的精進，例如晶圓的使用層面逐漸普及與擴大。在晶圓在製程完成後，其需要進行訊號傳輸等測試，以確保定晶圓等電子元件的品質是否存有缺陷。With the advancement of technology, the use of wafers is becoming more and more popular and expanded. After the wafer is processed, it needs to be tested for signal transmission to ensure whether there are any defects in the quality of electronic components such as wafers.
一般而言，晶圓訊號量測裝置，其測試訊號傳輸是否有問題，通常利用探針卡及晶圓卡盤以分別在晶圓的兩側連接晶圓的正極與負極並形成一個廻圈，再透過相關測試模組電性連接廻圈上，藉由訊號傳輸以及電性訊號分析，來獲得晶圓的測試結果。Generally speaking, wafer signal measurement equipment tests whether there is a problem with signal transmission. It usually uses a probe card and a wafer chuck to connect the positive and negative electrodes of the wafer on both sides of the wafer to form a loop. The loop is then electrically connected to the relevant test module to obtain the wafer test results through signal transmission and electrical signal analysis.
然而，對於不同材質形成的晶圓，其可能面臨高頻、高流、高壓或大功率等不同測試。而一般晶圓訊號量測裝置並無法同時因應不同的測試，而產生諸如設置不同測試裝置及其衍生的空間、時間、成本等問題。值得一提的是，如第1圖所示，現有晶圓訊號量測裝置9的探針卡91及晶圓卡盤92的電性連接上，其往往利用導線93的方式連接分別在晶圓的探針卡91及晶圓卡盤92，其造成傳輸距離的加長、拉長或過長等情形，從而不易於達到高速測試的目的或效率。另外，一般晶圓訊號量測裝置大多為直接以晶圓卡盤承載晶圓，而當大電流量測晶圓時可能發生晶圓沾黏或黏著於晶圓卡盤的問題，從而須整台裝置停機維護並且更換整個晶圓卡盤，其往往所造成成本花費及生產時程延宕的問題。However, for wafers made of different materials, they may face different tests such as high frequency, high current, high voltage or high power. The general wafer signal measurement device cannot cope with different tests at the same time, resulting in problems such as setting up different test devices and the space, time, cost and so on. It is worth mentioning that, as shown in Figure 1, the electrical connection between the probe card 91 and the wafer chuck 92 of the existing wafer signal measurement device 9 is often connected by wires 93 to the probe card 91 and the wafer chuck 92 on the wafer, which causes the transmission distance to be lengthened, stretched or too long, making it difficult to achieve the purpose or efficiency of high-speed testing. In addition, most general wafer signal measurement devices directly carry wafers on wafer chucks. When measuring large currents on wafers, the wafer may stick to or adhere to the wafer chuck, which requires the entire device to be shut down for maintenance and the entire wafer chuck to be replaced, which often results in costly expenses and production schedule delays.
綜觀前所述，本發明之發明者思索並設計一種高速、高頻及大功率的晶圓訊號量測裝置，以期針對習知技術之缺失加以改善，進而增進產業上之實施利用。In summary, the inventor of this invention has considered and designed a high-speed, high-frequency and high-power wafer signal measurement device in order to improve the deficiencies of the prior art and thereby promote its implementation and utilization in the industry.
本發明之目的在於提供一種高速、高頻及大功率的晶圓訊號量測裝置，以改善前述之問題。The purpose of this invention is to provide a high-speed, high-frequency and high-power wafer signal measurement device to improve the aforementioned problems.
基於上述目的，本發明係提供一種高速、高頻及大功率的晶圓訊號量測裝置，其應用於量測一晶圓，該晶圓具有相對的一第一面及一第二面。本發明的高速、高頻及大功率的晶圓訊號量測裝置包含一晶圓卡盤模組、一探針卡模組以及一測試單元。晶圓卡盤模組係包含一晶圓卡盤、一晶圓載板及一彈性導電圈。該晶圓載板係設置於該晶圓卡盤，且該晶圓載板的外形尺寸大於或等於該彈性導電圈的外徑。該晶圓載板係配置以承載該晶圓並電性連接該晶圓的該第一面。該彈性導電圈係設置於該晶圓載板上並圍繞於該晶圓的周圍，且該彈性導電圈係與該晶圓載板電性連接。探針卡模組係包含一探針卡座及一探針卡。該探針卡係設置於該探針卡座，該探針卡係具有能彈性變形的一探針組。該探針組係配置以電性連接該晶圓的該第二面。該探針卡座係具有一導電區。該導電區係電性連接該探針組。並且，該導電區的沿著一X方向的尺寸或沿著垂直於該X方向的一Y方向的尺寸大於該彈性導電圈的外徑。在該探針組電性連接該晶圓的該第二面時，該導電區實質接觸該彈性導電圈，以電性連接該彈性導電圈。測試單元係電性連接至該晶圓卡盤模組與該探針卡模組之間，該測試單元係配置以提供一測試訊號以檢測該晶圓。其中，該探針卡座係配置以帶動該探針卡沿著垂直於該X方向及該Y方向的Z方向往復位移，以使該探針卡的該探針組電性連接該晶圓的該第二面或脫離電性連接該晶圓的該第二面，且該導電區壓制或脫離該彈性導電圈。Based on the above purpose, the present invention provides a high-speed, high-frequency and high-power wafer signal measurement device, which is used to measure a wafer having a first surface and a second surface relative to each other. The high-speed, high-frequency and high-power wafer signal measurement device of the present invention includes a wafer chuck module, a probe card module and a test unit. The wafer chuck module includes a wafer chuck, a wafer carrier and an elastic conductive ring. The wafer carrier is arranged on the wafer chuck, and the outer dimensions of the wafer carrier are greater than or equal to the outer diameter of the elastic conductive ring. The wafer carrier is configured to carry the wafer and electrically connect to the first surface of the wafer. The elastic conductive ring is arranged on the wafer carrier and surrounds the wafer, and the elastic conductive ring is electrically connected to the wafer carrier. The probe card module includes a probe card holder and a probe card. The probe card is arranged on the probe card holder, and the probe card has a probe set that can be elastically deformed. The probe set is configured to electrically connect to the second surface of the wafer. The probe card holder has a conductive area. The conductive area is electrically connected to the probe set. Moreover, the size of the conductive area along an X direction or along a Y direction perpendicular to the X direction is greater than the outer diameter of the elastic conductive ring. When the probe set is electrically connected to the second surface of the wafer, the conductive area actually contacts the elastic conductive ring to electrically connect to the elastic conductive ring. The test unit is electrically connected between the wafer chuck module and the probe card module, and is configured to provide a test signal to detect the wafer. The probe card holder is configured to drive the probe card to reciprocate along the Z direction perpendicular to the X direction and the Y direction, so that the probe set of the probe card is electrically connected to the second surface of the wafer or disconnected from the second surface of the wafer, and the conductive area presses or disconnects from the elastic conductive ring.
較佳地，該探針卡座包含一導電件。該導電件係絕緣地固定於該探針卡座的本體。該導電件係承載該探針卡並且電性連接於該探針組，且該導電區設置於該導電件。Preferably, the probe holder includes a conductive member. The conductive member is insulated and fixed to the body of the probe holder. The conductive member carries the probe card and is electrically connected to the probe set, and the conductive area is disposed on the conductive member.
較佳地，該導電件係具有一鏤空區，以顯露出該探針組。Preferably, the conductive member has a hollow area to expose the probe set.
較佳地，該導電件面向該探針卡座的本體的一面設有一絕緣層。該導電件設有複數個固定孔，且該導電件利用複數個鎖固件分別穿過該固定孔鎖固於該探針卡座的本體而固定於該探針卡座的本體。其中，該複數個鎖固件至少與該導電件接觸的部分設有該絕緣層。Preferably, an insulating layer is provided on one side of the conductive part facing the body of the probe holder. The conductive part is provided with a plurality of fixing holes, and the conductive part is fixed to the body of the probe holder by using a plurality of locking pieces to pass through the fixing holes and lock to the body of the probe holder. The insulating layer is provided at least on the part of the plurality of locking pieces that contacts the conductive part.
較佳地，該導電件包含一第一導電件及一第二導電件，該第一導電件係絕緣地固定於該探針卡座的本體，該第一導電件具有該鏤空區，該探針卡係固定於該第二導電件且電性連接該第二導電件，該第二導電件係容置於於該第一導電件。Preferably, the conductive member includes a first conductive member and a second conductive member, the first conductive member is insulated and fixed to the body of the probe card holder, the first conductive member has the hollow area, the probe card is fixed to the second conductive member and electrically connected to the second conductive member, and the second conductive member is accommodated in the first conductive member.
較佳地，該探針卡座的本體容置該第一導電件的容置空間相對的設有二承載塊，該第一導電件對應於該承載塊具有二承載槽，其中，該承載塊面向該承載槽的一面設有一絕緣層，及/或，該探針卡座的本體與該導電件組合後相對於該晶圓卡盤模組的表面設有該絕緣層。Preferably, the probe holder body has two supporting blocks opposite to the accommodation space for accommodating the first conductive element, and the first conductive element has two supporting grooves corresponding to the supporting blocks, wherein the supporting block has an insulating layer on one side facing the supporting groove, and/or the probe holder body is provided with the insulating layer on the surface opposite to the wafer chuck module after being combined with the conductive element.
較佳地，該探針卡設有至少一第一連接器，其電性連接該探針組，該第二導電件面向該探針卡的一面對應於該第一連接器設有至少一第二連接器，該探針卡固定於該第二導電件時，該第一連接器電性連接該第二連接器。Preferably, the probe card is provided with at least one first connector, which is electrically connected to the probe set, and the second conductive member is provided with at least one second connector corresponding to the first connector on a side facing the probe card, and when the probe card is fixed to the second conductive member, the first connector is electrically connected to the second connector.
較佳地，該探針組的正極係電性連接該晶圓的該第二面，該探針組的負極係電性連接該導電件。Preferably, the positive electrode of the probe set is electrically connected to the second surface of the wafer, and the negative electrode of the probe set is electrically connected to the conductive element.
較佳地，該彈性導電圈具有相對的一第一導電面及一第二導電面。該第一導電面的全部區域以面接觸形式實質接觸於該晶圓載板，該第二導電面係至少部分區域以面接觸形式實質接觸於該導電區。Preferably, the elastic conductive ring has a first conductive surface and a second conductive surface opposite to each other. The entire area of the first conductive surface is in physical contact with the wafer carrier in the form of surface contact, and at least a portion of the area of the second conductive surface is in physical contact with the conductive area in the form of surface contact.
較佳地，該彈性導電圈係由導電布、銅箔、有無導電或無導電的泡綿、有無導電或無導電的具彈性矽膠或橡膠、導電雙膠之一或其任意組合所形成。Preferably, the elastic conductive ring is formed by conductive cloth, copper foil, conductive or non-conductive foam, conductive or non-conductive elastic silicone or rubber, conductive double rubber, or any combination thereof.
以下將以具體的實施例配合所附的圖式詳加說明本發明的技術特徵，以使所屬技術領域具有通常知識者可易於瞭解本發明的目的、技術特徵、及其優點。The following will use specific embodiments and the attached drawings to explain in detail the technical features of the present invention so that people with ordinary knowledge in the relevant technical field can easily understand the purpose, technical features, and advantages of the present invention.
1:高速、高頻及大功率的晶圓訊號量測裝置1: High-speed, high-frequency and high-power wafer signal measurement equipment
10:晶圓卡盤模組10: Wafer chuck module
11:晶圓卡盤11: Wafer chuck
12:晶圓載板12: Wafer carrier
13:彈性導電圈13: Elastic conductive ring
131:第一導電面131: First conductive surface
132:第二導電面132: Second conductive surface
20:探針卡模組20: Probe card module
21:探針卡座21: Probe holder
211:導電區211: Conductive area
212:導電件212: Conductive parts
2121:第一導電件2121: First conductive element
2122:第二導電件2122: Second conductive member
2123:承載槽2123: Loading tank
2124:第二連接器2124: Second connector
213:承載塊213: Loading block
214:鏤空區214: hollowed out area
215:絕緣層215: Insulation layer
216:固定孔216:Fixing hole
217:鎖固件217: Lock firmware
22:探針卡22: Probe card
221:探針組221: Probe set
222:第一連接器222: First connector
30:測試單元30:Test unit
9:現有測量裝置9: Existing measuring devices
91:現有探針卡91: Existing probe card
92:現有晶圓卡盤92: Existing wafer chuck
93:導線93: Conductor
W:晶圓W: Wafer
W1:第一面W1: First page
W2:第二面W2: Second side
X:X方向X: X direction
Z:Z方向Z: Z direction
為了更清楚地說明本發明實施例的技術方案，下面將對本發明實施例描述中所需要使用的附圖作簡單地介紹，顯而易見地，下面所描述的附圖僅僅是本發明的一些實施例，對於本發明所屬技術領域中具有通常知識者來講，還可以根據這些附圖獲得其他的附圖。In order to more clearly explain the technical solution of the embodiment of the present invention, the drawings required for describing the embodiment of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those with ordinary knowledge in the technical field to which the present invention belongs, other drawings can be obtained based on these drawings.
第1圖係為現有測量裝置的示意圖。Figure 1 is a schematic diagram of an existing measuring device.
第2圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的第一結構示意圖。Figure 2 is a schematic diagram of the first structure of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
第3圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的第二結構示意圖。Figure 3 is a second structural schematic diagram of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
第4圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的晶圓卡盤模組的剖面結構示意圖。Figure 4 is a schematic diagram of the cross-sectional structure of the wafer chuck module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
第5圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的晶圓卡盤模組的立體結構示意圖。Figure 5 is a three-dimensional structural diagram of the wafer chuck module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
第6圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的探針卡模組的剖面結構示意圖。Figure 6 is a schematic diagram of the cross-sectional structure of the probe card module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
第7圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的探針卡模組的立體結構示意圖。Figure 7 is a three-dimensional structural diagram of the probe card module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
第8圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的另一實施例的探針卡模組的立體結構示意圖。Figure 8 is a three-dimensional structural diagram of a probe card module of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
第9圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的另一實施例的結構示意圖。Figure 9 is a schematic structural diagram of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
本發明的優點、特徵以及達到的技術方法將參照例示性實施例及所附圖式進行更詳細地描述而更容易理解，且本發明可以不同形式來實現，故不應被理解僅限於此處所陳述的實施例，相反地，對所屬技術領域中具有通常知識者而言，所提供的實施例將使本揭露更加透徹與全面且完整地傳達本發明的範疇，且本發明將僅為所附加的申請專利範圍所定義。The advantages, features and technical methods of the present invention will be described in more detail with reference to the exemplary embodiments and the attached drawings so that they are easier to understand. The present invention can be implemented in different forms and should not be understood to be limited to the embodiments described herein. On the contrary, for those with ordinary knowledge in the relevant technical field, the provided embodiments will make this disclosure more thorough and comprehensive and fully convey the scope of the present invention, and the present invention will only be defined by the scope of the attached patent application.
應當理解的是，儘管術語「第一」、「第二」等在本發明中可用於描述各種元件、部件、區域、區段、層及/或部分，但是這些元件、部件、區域、區段、層及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、區段、層及/或部分與另一個元件、部件、區域、區段、層及/或部分區分開。It should be understood that although the terms "first", "second", etc. may be used in the present invention to describe various elements, components, regions, sections, layers and/or parts, these elements, components, regions, sections, layers and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, section, layer and/or part from another element, component, region, section, layer and/or part.
除非另有定義，本發明所使用的所有術語(包括技術和科學術語)具有與本發明所屬技術領域的通常知識者通常理解的相同含義。將進一步理解的是，諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的定義，並且將不被解釋為理想化或過度正式的意義，除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used in the present invention have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention belongs. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having definitions consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or overly formal meanings unless expressly so defined herein.
請一併參閱第2至5圖。第2圖、第3圖係分別為本發明的高速、高頻及大功率的晶圓訊號量測裝置的晶圓卡盤模組及探針卡模組分離示意圖及結合結構示意圖。第4圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的晶圓卡盤模組的結構示意圖。第5圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的探針卡模組的結構示意圖。Please refer to Figures 2 to 5 together. Figures 2 and 3 are respectively the separation schematic diagram and the combined structural schematic diagram of the wafer chuck module and the probe card module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention. Figure 4 is a structural schematic diagram of the wafer chuck module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention. Figure 5 is a structural schematic diagram of the probe card module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.
如圖所示，本發明的一種高速、高頻及大功率的晶圓訊號量測裝置1，其係應用於量測一晶圓W的訊號傳輸是否正常；該晶圓W具有相對的一第一面W1及一第二面W2。本發明的高速、高頻及大功率的晶圓訊號量測裝置1主要包含一晶圓卡盤模組10、一探針卡模組20以及一測試單元30。當然地，本發明的高速、高頻及大功率的晶圓訊號量測裝置1更包含如控制各元件運作及量測結果運算的一或多個處理器、如驅動探針卡模組20移動的一或多個驅動模組、如顯示量測結果的顯示模組等元件，其係為所屬技術領域中具有通常知識者所熟知或慣用的元件，並非本發明的主要重點，為避免模糊本發明的主要重點於此便不加以贅述。As shown in the figure, a high-speed, high-frequency and high-power wafer signal measurement device 1 of the present invention is used to measure whether the signal transmission of a wafer W is normal; the wafer W has a first surface W1 and a second surface W2 opposite to each other. The high-speed, high-frequency and high-power wafer signal measurement device 1 of the present invention mainly includes a wafer chuck module 10, a probe card module 20 and a test unit 30. Of course, the high-speed, high-frequency and high-power wafer signal measurement device 1 of the present invention further includes components such as one or more processors for controlling the operation of each component and the calculation of the measurement result, one or more drive modules for driving the probe card module 20 to move, and a display module for displaying the measurement result. These are components that are well known or commonly used by people with ordinary knowledge in the relevant technical field, and are not the main focus of the present invention. In order to avoid blurring the main focus of the present invention, they will not be elaborated here.
如第2至5圖所示。晶圓卡盤模組10係包含一晶圓卡盤11、一晶圓載板12及一彈性導電圈13。其中，晶圓卡盤11例如為所屬技術領域中具有通常知識者所熟知或慣用的wafer chuck，該晶圓載板12係設置於該晶圓卡盤11，且該晶圓載板12係配置以承載該晶圓W。另外，該晶圓載板12的外形尺寸大於或等於該彈性導電圈13的外徑，從而該彈性導電圈13係設置於該晶圓載板12上，並圍繞於該晶圓W的周圍。舉例來說，晶圓載板12的外形尺寸可對應於晶圓卡盤11的承載面的尺寸，而該彈性導電圈13的內徑係大於晶圓W的直徑，而依據實際需求而配置彈性導電圈13的外徑不遠大於彈性導電圈13的內徑，即彈性導電圈13依據實際需求而配置寬度。As shown in FIGS. 2 to 5 , the wafer chuck module 10 includes a wafer chuck 11, a wafer carrier 12, and an elastic conductive ring 13. The wafer chuck 11 is, for example, a wafer chuck that is well known or commonly used by a person skilled in the art. The wafer carrier 12 is disposed on the wafer chuck 11, and the wafer carrier 12 is configured to carry the wafer W. In addition, the outer dimensions of the wafer carrier 12 are greater than or equal to the outer diameter of the elastic conductive ring 13, so that the elastic conductive ring 13 is disposed on the wafer carrier 12 and surrounds the wafer W. For example, the outer dimensions of the wafer carrier 12 may correspond to the dimensions of the bearing surface of the wafer chuck 11, and the inner diameter of the elastic conductive ring 13 is larger than the diameter of the wafer W. The outer diameter of the elastic conductive ring 13 is configured to be not much larger than the inner diameter of the elastic conductive ring 13 according to actual needs, that is, the width of the elastic conductive ring 13 is configured according to actual needs.
值得一提的是，晶圓載板12係由具導電性或良好導電性材質所製成，例如銅等材質，從而該晶圓載板12承載該晶圓W時，該晶圓載板12係電性連接該晶圓W的該第一面W1，例如晶圓W的負極等。其中，本發明藉由在晶圓載板12及位於其上的彈性導電圈13以供設置於晶圓卡盤11的方式，其可便於直接地使用於或在微改造的基礎下使用於現有或舊有的量測裝置的晶圓卡盤上，而可節省重新購置量測裝置的成本問題，以達到更新或更換量測裝置的類似於無縫接軌、無痛接軌的便利性。並且，當量測出現異常狀況時，例如大電流量測晶圓而發生如晶圓黏著於晶圓載板12等異常狀況，使用者可直接更換晶圓載板12及位於其上的彈性導電圈13，而可避免或降低如現有量測裝置晶圓黏著於晶圓卡盤而須整台裝置停機維護或更換整個晶圓卡盤所造成成本花費或生產時程延宕的風險問題。It is worth mentioning that the wafer carrier 12 is made of a conductive or good conductive material, such as copper, so that when the wafer carrier 12 carries the wafer W, the wafer carrier 12 is electrically connected to the first surface W1 of the wafer W, such as the negative electrode of the wafer W. Among them, the present invention can be directly used on or on the basis of micro-modification on the wafer chuck of an existing or old measuring device by providing the wafer carrier 12 and the elastic conductive ring 13 thereon for being arranged on the wafer chuck 11, thereby saving the cost of repurchasing the measuring device, so as to achieve the convenience of updating or replacing the measuring device similar to seamless and painless track. Furthermore, when an abnormal condition occurs during measurement, such as when a large current is measured and the wafer is adhered to the wafer carrier 12, the user can directly replace the wafer carrier 12 and the elastic conductive ring 13 thereon, thereby avoiding or reducing the risk of cost or production delay caused by shutting down the entire device for maintenance or replacing the entire wafer chuck, as in the prior art measurement device where the wafer is adhered to the wafer chuck.
又值得一提的是，該彈性導電圈13係由導電布、銅箔、有導電或無導電的泡綿、有導電或無導電的具彈性矽膠或橡膠、導電雙膠之一或其任意組合所形成。舉例來說，彈性導電圈13可直接由具導電性的矽膠、橡膠、泡綿、導電雙膠、高分子複合材等材質所形成，或者是，彈性導電圈13可矽膠、橡膠、泡綿、高分子複合材等形成環體，再利用導電布、銅箔、導電泡綿等材質包覆於環體的外側所形成。藉此，該彈性導電圈13係與該晶圓載板12電性連接。晶圓載板12及位於其上的彈性導電圈13，藉由上述方式配置，可有效的達到節省晶圓卡盤的成本，而有助於當大電流量測晶圓而發生等異常狀況時，使用者可直接更換晶圓載板12及位於其上的彈性導電圈13，而可有效降低大電流量測晶圓時對量測裝置可能產生的風險。It is worth mentioning that the elastic conductive ring 13 is formed by conductive cloth, copper foil, conductive or non-conductive foam, conductive or non-conductive elastic silicone or rubber, conductive bi-polymer, or any combination thereof. For example, the elastic conductive ring 13 can be directly formed by conductive silicone, rubber, foam, conductive bi-polymer, polymer composite, etc., or the elastic conductive ring 13 can be formed into a ring by silicone, rubber, foam, polymer composite, etc., and then the outer side of the ring is covered with conductive cloth, copper foil, conductive foam, etc. In this way, the elastic conductive ring 13 is electrically connected to the wafer carrier 12. The wafer carrier 12 and the elastic conductive ring 13 thereon are configured in the above manner, which can effectively save the cost of the wafer chuck, and when abnormal conditions occur during large current measurement of the wafer, the user can directly replace the wafer carrier 12 and the elastic conductive ring 13 thereon, which can effectively reduce the risk that may be caused to the measuring device when measuring large current of the wafer.
如第2、3、6、7圖所示。探針卡模組20係包含探針卡座21及探針卡22。其中，該探針卡22係設置於該探針卡座21。該探針卡22係具有能彈性變形的探針組221。該探針組221係配置以電性連接該晶圓W的該第二面W2。探針組221可為所屬技術領域中具有通常知識者所熟知或慣用的元件。另外，晶圓載板12電性連接該晶圓W的該第一面W1及探針組221電性連接該晶圓W的該第二面W2，其詳細方式或手段係為所屬技術領域中具有通常知識者所熟知或慣用，例如探針組221電性連接該晶圓W的正極，而晶圓載板12電性連接該晶圓W的負極等，故，於此便不再加以贅述。As shown in Figures 2, 3, 6, and 7, the probe card module 20 includes a probe card holder 21 and a probe card 22. The probe card 22 is disposed on the probe card holder 21. The probe card 22 has a probe set 221 that can be elastically deformed. The probe set 221 is configured to electrically connect to the second surface W2 of the wafer W. The probe set 221 can be a component that is well known or commonly used by a person of ordinary skill in the art. In addition, the wafer carrier 12 is electrically connected to the first surface W1 of the wafer W and the probe set 221 is electrically connected to the second surface W2 of the wafer W. The detailed methods or means are well known or commonly used by those skilled in the art. For example, the probe set 221 is electrically connected to the positive electrode of the wafer W, and the wafer carrier 12 is electrically connected to the negative electrode of the wafer W, etc. Therefore, it will not be described in detail here.
值得一提的是，該探針卡座21係具有一導電區211。該導電區211係電性連接該探針組221。其中，該導電區211的沿著X方向的尺寸或沿著垂直於該X方向的Y方向(面向圖式的方向，未繪示於圖中)的尺寸大於該彈性導電圈13的外徑，從而在該探針組221電性連接該晶圓W的該第二面W2時，該導電區211實質接觸該彈性導電圈13，以電性連接該彈性導電圈13。其中，該探針卡座21係配置以帶動該探針卡22沿著垂直於該X方向及該Y方向的Z方向往復位移，以使該探針卡22的該探針組221電性連接該晶圓W的該第二面W2或脫離電性連接該晶圓W的該第二面W2，且該導電區211壓制或脫離該彈性導電圈13。It is worth mentioning that the probe holder 21 has a conductive area 211. The conductive area 211 is electrically connected to the probe assembly 221. The size of the conductive area 211 along the X direction or along the Y direction perpendicular to the X direction (the direction facing the figure, not shown in the figure) is larger than the outer diameter of the elastic conductive ring 13, so that when the probe assembly 221 is electrically connected to the second surface W2 of the wafer W, the conductive area 211 actually contacts the elastic conductive ring 13 to electrically connect to the elastic conductive ring 13. The probe card holder 21 is configured to drive the probe card 22 to reciprocate along the Z direction perpendicular to the X direction and the Y direction, so that the probe set 221 of the probe card 22 is electrically connected to the second surface W2 of the wafer W or disconnected from the second surface W2 of the wafer W, and the conductive area 211 presses or disconnects from the elastic conductive ring 13.
詳細來說，該彈性導電圈13至少具有相對的一第一導電面131及一第二導電面132。所述該導電區211的沿著X方向的尺寸或沿著垂直於該X方向的Y方向的尺寸大於該彈性導電圈13的外徑，舉例來說，例如導電區211為長方形，而其在X方向的尺寸或Y方向的尺寸大於彈性導電圈13的外徑，或者是，導電區211可為正方形，而該彈性導電圈13的外徑則可配置為正方形的內接圓，又或者是，導電區211可為直徑大於或等於彈性導電圈13的外徑的圓形等。因此，由於晶圓載板12的外形尺寸大於或等於彈性導電圈13的外徑，從而第一導電面131的全部區域以面接觸形式實質接觸於晶圓載板12。另外，由於導電區211的沿著X方向的尺寸或沿著Y方向的尺寸大於彈性導電圈13的外徑，從而第二導電面132至少部分區域以面接觸形式實質接觸於導電區211。Specifically, the elastic conductive ring 13 has at least a first conductive surface 131 and a second conductive surface 132 opposite to each other. The size of the conductive region 211 along the X direction or along the Y direction perpendicular to the X direction is greater than the outer diameter of the elastic conductive ring 13. For example, the conductive region 211 is rectangular, and its size in the X direction or the Y direction is greater than the outer diameter of the elastic conductive ring 13. Alternatively, the conductive region 211 may be a square, and the outer diameter of the elastic conductive ring 13 may be configured as an inscribed circle of the square. Alternatively, the conductive region 211 may be a circle with a diameter greater than or equal to the outer diameter of the elastic conductive ring 13. Therefore, since the outer dimensions of the wafer carrier 12 are greater than or equal to the outer diameter of the elastic conductive ring 13, the entire area of the first conductive surface 131 is in substantial contact with the wafer carrier 12 in the form of surface contact. In addition, since the size of the conductive area 211 along the X direction or along the Y direction is greater than the outer diameter of the elastic conductive ring 13, at least a portion of the second conductive surface 132 is in substantial contact with the conductive area 211 in the form of surface contact.
另一方面，該探針卡座21包含一導電件212。該導電件212可由具導電性或良好導電性材質所製成，例如銅等材質。其中，導電件212係絕緣地固定於該探針卡座21的本體，以形成該導電區211。該導電件212係承載該探針卡22並且電性連接於該探針組221；其中，該導電件212係具有一鏤空區214，以顯露出該探針組221，以使探針組221的各探針的一端能接觸晶圓W。On the other hand, the probe holder 21 includes a conductive member 212. The conductive member 212 can be made of a conductive or good conductive material, such as copper. The conductive member 212 is insulated and fixed to the body of the probe holder 21 to form the conductive area 211. The conductive member 212 carries the probe card 22 and is electrically connected to the probe set 221; the conductive member 212 has a hollow area 214 to expose the probe set 221 so that one end of each probe of the probe set 221 can contact the wafer W.
值得一提的是，所述導電件212絕緣地固定於探針卡座21的本體，其可為導電件212面向該探針卡座21的本體的一面或導電件212面向探針卡座21的本體的一面及各側面可設有一絕緣層215；絕緣層215例如可為鐵氟龍絕緣層或鐵氟龍絕緣墊。該導電件212設有複數個固定孔216，該導電件212則可利用複數個鎖固件217分別穿過該固定孔216鎖固於該探針卡座21的本體，從而固定於該探針卡座21的本體。進一步地，該複數個鎖固件217至少與該導電件212接觸的部分設有該絕緣層215。舉例來說，鎖固件217可為螺栓，而螺栓的頭部可套設絕緣層215，或者是，螺栓的頭部面向導電件212的一面可設有絕緣層215。藉由上述配置，可使導電件212絕緣地固定於探針卡座21的本體。It is worth mentioning that the conductive member 212 is insulated and fixed to the body of the probe holder 21. The conductive member 212 may be provided with an insulating layer 215 on one side of the body of the probe holder 21 or on one side and each side of the body of the probe holder 21. The insulating layer 215 may be a Teflon insulating layer or a Teflon insulating pad. The conductive member 212 is provided with a plurality of fixing holes 216. The conductive member 212 may be fixed to the body of the probe holder 21 by passing through the fixing holes 216 with a plurality of locking members 217, thereby being fixed to the body of the probe holder 21. Furthermore, the plurality of locking members 217 are provided with the insulating layer 215 at least at the portion in contact with the conductive member 212. For example, the locking member 217 may be a bolt, and the head of the bolt may be provided with the insulating layer 215, or the side of the head of the bolt facing the conductive member 212 may be provided with the insulating layer 215. With the above configuration, the conductive member 212 can be fixed to the body of the probe holder 21 in an insulated manner.
其中，測試單元30係電性連接至該晶圓卡盤模組10與該探針卡模組20之間，例如測試單元30連接至晶圓載板12或彈性導電圈13等，因此，該測試單元30係提供測試訊號以量測該晶圓W。較佳地，該探針組221的正極係電性連接該晶圓W的該第二面W2，該探針組221的負極係電性連接該導電件212。因此，一方面，探針組221可直接電性連接於晶圓W與導電件212之間，而導電件212則直接電性連接至彈性導電圈13；另一方面，晶圓載板12直接電性連接於晶圓W，而晶圓載板12亦直接電性連接至彈性導電圈13。藉由上述配置，可使整體形成一個廻路，以利於測試單元30電性連接及量測晶圓W。The test unit 30 is electrically connected between the wafer chuck module 10 and the probe card module 20, for example, the test unit 30 is connected to the wafer carrier 12 or the elastic conductive ring 13, so the test unit 30 provides a test signal to measure the wafer W. Preferably, the positive electrode of the probe set 221 is electrically connected to the second surface W2 of the wafer W, and the negative electrode of the probe set 221 is electrically connected to the conductive member 212. Therefore, on one hand, the probe set 221 can be directly electrically connected between the wafer W and the conductive element 212, and the conductive element 212 is directly electrically connected to the elastic conductive ring 13; on the other hand, the wafer carrier 12 is directly electrically connected to the wafer W, and the wafer carrier 12 is also directly electrically connected to the elastic conductive ring 13. Through the above configuration, a loop can be formed as a whole, which is conducive to the electrical connection and measurement of the wafer W by the test unit 30.
請一併參閱第8、9圖。第8圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的另一實施例的探針卡模組的立體結構示意圖。第9圖係為本發明的高速、高頻及大功率的晶圓訊號量測裝置的另一實施例的結構示意圖。在本實施例中，相同元件符號之元件，其配置與運作係與前述之實施例相同或類似，其相同或類似於之處，於此便不再加以贅述。Please refer to Figures 8 and 9 together. Figure 8 is a three-dimensional structural diagram of a probe card module of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention. Figure 9 is a structural diagram of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention. In this embodiment, the components with the same component symbols have the same or similar configuration and operation as the aforementioned embodiments, and the same or similar parts will not be repeated here.
如圖所示，本實施例與前述實施例的主要不同之處在於，探針卡模組20的結構不同。其中該導電件包含一第一導電件2121及一第二導電件2122。該第一導電件2121係絕緣地固定於該探針卡座21的本體，而第二導電件2122則容置於第一導電件2121。進一步來說，該探針卡座21的本體具有容置第一導電件2121的容置空間，而該容置空間相對的設有二承載塊213；與之對應的，該第一導電件2121對應於該承載塊213具有二承載槽2123。藉此，第一導電件2121可穩固地容置於該探針卡座21的本體。As shown in the figure, the main difference between this embodiment and the aforementioned embodiment is that the structure of the probe card module 20 is different. The conductive member includes a first conductive member 2121 and a second conductive member 2122. The first conductive member 2121 is insulated and fixed to the body of the probe card holder 21, and the second conductive member 2122 is accommodated in the first conductive member 2121. In other words, the body of the probe card holder 21 has a receiving space for accommodating the first conductive member 2121, and two supporting blocks 213 are arranged opposite to the receiving space; correspondingly, the first conductive member 2121 has two supporting grooves 2123 corresponding to the supporting blocks 213. In this way, the first conductive member 2121 can be stably accommodated in the body of the probe card holder 21.
值得一提的是，該承載塊213面向該承載槽2123的一面設有絕緣層215；當然地，用於鎖固第一導電件2121與探針卡座21的本體的鎖孔、鎖固件上預定位置亦可設有絕緣層215或由絕緣層215所形成的包覆膜。另外，探針卡座21的本體與該導電件組合後相對於該晶圓卡盤模組10的表面設有該絕緣層，而該方式可搭配上述在承載塊213面向該承載槽2123的一面設有絕緣層215的方式配置，亦可在無搭配上述在承載塊213面向該承載槽2123的一面設有絕緣層215的方式下直接配置。It is worth mentioning that the side of the support block 213 facing the support slot 2123 is provided with an insulating layer 215; of course, the locking hole used to lock the first conductive member 2121 and the body of the probe holder 21, and the predetermined position on the locking member can also be provided with an insulating layer 215 or a coating formed by the insulating layer 215. In addition, after the probe holder 21 is assembled with the conductive element, the insulating layer is provided on the surface of the wafer chuck module 10, and this method can be configured in combination with the above-mentioned method of providing the insulating layer 215 on the side of the support block 213 facing the support groove 2123, or can be directly configured without the above-mentioned method of providing the insulating layer 215 on the side of the support block 213 facing the support groove 2123.
其中，該第一導電件2121具有該鏤空區214，且導電區211亦形成於第一導電件2121面向晶圓卡盤模組10的一面。另外，該探針卡22係固定於該第二導電件2122且電性連接第二導電件2122。進一步來說，該探針卡22設有至少一第一連接器222，在本實施例中係以四個作為示範，但並不以此作為局限。第一連接器222電性連接該探針組221，例如，第一連接器222電性連接該探針組221的負極。該第二導電件2122面向該探針卡22的一面對應於該第一連接器222設有至少一第二連接器2124。該探針卡22固定於該第二導電件2122時，該第一連接器222電性連接該第二連接器2124，亦即第一連接器222插接於第二連接器2124。Among them, the first conductive member 2121 has the hollow area 214, and the conductive area 211 is also formed on a side of the first conductive member 2121 facing the wafer chuck module 10. In addition, the probe card 22 is fixed to the second conductive member 2122 and electrically connected to the second conductive member 2122. Further, the probe card 22 is provided with at least one first connector 222, and four are used as an example in this embodiment, but it is not limited to this. The first connector 222 is electrically connected to the probe group 221, for example, the first connector 222 is electrically connected to the negative pole of the probe group 221. The side of the second conductive member 2122 facing the probe card 22 is provided with at least one second connector 2124 corresponding to the first connector 222. When the probe card 22 is fixed to the second conductive member 2122, the first connector 222 is electrically connected to the second connector 2124, that is, the first connector 222 is plugged into the second connector 2124.
藉此，探針組221可電性連接至第一連接器222，第一連接器222電性連接至第二連接器2124。而第二導電件2122與第一導電件2121的承靠或容置時的實質接觸，可使第二導電件2122再電性連接至第一導電件2121上的導電區211。Thus, the probe assembly 221 can be electrically connected to the first connector 222, and the first connector 222 is electrically connected to the second connector 2124. The second conductive member 2122 is physically in contact with the first conductive member 2121 when supported or accommodated, so that the second conductive member 2122 can be electrically connected to the conductive area 211 on the first conductive member 2121.
須特別的說明的是，本發明的高速、高頻及大功率的晶圓訊號量測裝置，其藉由上述各實施例的配置，其可有於自動化量測。舉例來說，使用者可將多個晶圓放置於具有多層的晶圓架的各層中。接著，將含有多個晶圓的晶圓架設置於晶圓訊號量測裝置，以藉由晶圓訊號量測裝置的如真空吸盤、推動單元或其組合等方式，以由晶圓架中逐一取出晶圓，而放置於晶圓載板上進行量測。It should be particularly noted that the high-speed, high-frequency and high-power wafer signal measurement device of the present invention can be used for automated measurement through the configuration of the above-mentioned embodiments. For example, the user can place multiple wafers in each layer of a wafer rack with multiple layers. Then, the wafer rack containing multiple wafers is placed in the wafer signal measurement device, and the wafers are taken out one by one from the wafer rack by means of the wafer signal measurement device, such as a vacuum suction cup, a push unit or a combination thereof, and placed on a wafer carrier for measurement.
本發明的高速、高頻及大功率的晶圓訊號量測裝置，其藉由上述配置，可使整體形成一個路徑短的電性連接廻路，從而相較於一般或現有的量測裝置利用導線的方式連接分別在晶圓的探針卡及晶圓卡盤，其更能達到高速量測的功效。另外，本發明藉由晶圓載板及位於其上的彈性導電圈設置於晶圓卡盤的方式，其可便於使用現有或舊有的量測裝置，而可節省重新購置量測裝置的成本問題；並且，當量測出現異常狀況時，可直接更換晶圓載板及位於其上的彈性導電圈，而可避免整台裝置停機維護或更換整個晶圓卡盤所造成成本花費或生產時程延宕的問題。再者，本發明藉由晶圓載板與彈性導電圈的面接觸的配置，及導電件與彈性導電圈的面接觸的配置，從而可達到高頻及大功率的晶圓訊號量測。The high-speed, high-frequency and high-power wafer signal measuring device of the present invention can form an overall short-path electrical connection loop through the above configuration, thereby achieving a higher-speed measurement effect compared to the general or existing measuring device that uses wires to connect the probe card and the wafer chuck respectively on the wafer. In addition, the present invention can facilitate the use of existing or old measuring devices by arranging the wafer carrier and the elastic conductive ring thereon on the wafer chuck, thereby saving the cost of repurchasing the measuring device; and, when an abnormal condition occurs in the measurement, the wafer carrier and the elastic conductive ring thereon can be directly replaced, thereby avoiding the cost of shutting down the entire device for maintenance or replacing the entire wafer chuck or delaying the production schedule. Furthermore, the present invention can achieve high-frequency and high-power wafer signal measurement by configuring the surface contact between the wafer carrier and the elastic conductive ring, and configuring the surface contact between the conductive component and the elastic conductive ring.
通過以上的實施方式的描述，所屬技術領域中具有通常知識者可以清楚地理解到各實施方式可藉由軟體加必需的通用硬體平台的方式來實現，當然也可以通過硬體。基於這樣的理解，上述技術方案本質上或者說對習知技術做出貢獻的部分可以以軟體產品的形式體現出來，該電腦軟體產品可以儲存在電腦可讀儲存介質中，如ROM/RAM、磁碟、光碟等，包括若干指令用以使得一台電腦設備(可以是個人電腦，伺服器，或者網路設備等)執行各個實施例或者實施例的某些部分所述的方法。Through the description of the above implementation methods, those with general knowledge in the relevant technical field can clearly understand that each implementation method can be implemented by software plus the necessary general hardware platform, and of course by hardware. Based on this understanding, the above technical solution in essence or the part that contributes to the knowledge and technology can be embodied in the form of a software product, which can be stored in a computer-readable storage medium, such as ROM/RAM, a disk, an optical disk, etc., and includes a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each implementation or some parts of the implementation.
以上所述僅為舉例性，而非為限制性者。任何未脫離本發明之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modification or change made to the invention without departing from the spirit and scope of the invention shall be included in the scope of the patent application attached hereto.
1:高速、高頻及大功率的晶圓訊號量測裝置1: High-speed, high-frequency and high-power wafer signal measurement equipment
10:晶圓卡盤模組10: Wafer chuck module
11:晶圓卡盤11: Wafer chuck
12:晶圓載板12: Wafer carrier
13:彈性導電圈13: Elastic conductive ring
131:第一導電面131: First conductive surface
132:第二導電面132: Second conductive surface
20:探針卡模組20: Probe card module
21:探針卡座21: Probe holder
211:導電區211: Conductive area
212:導電件212: Conductive parts
214:鏤空區214: hollowed out area
215:絕緣層215: Insulation layer
216:固定孔216:Fixing hole
217:鎖固件217: Lock firmware
22:探針卡22: Probe card
221:探針組221: Probe set
30:測試單元30:Test unit
W:晶圓W: Wafer
W1:第一面W1: First page
W2:第二面W2: Second side
X:X方向X: X direction
Z:Z方向Z: Z direction
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112137935ATWI863607B (en) | 2023-10-03 | 2023-10-03 | High-speed, high-frequency and high-power wafer signal measurement device |
| CN202311476370.8ACN119757800A (en) | 2023-10-03 | 2023-11-08 | High-speed, high-frequency and high-power wafer signal measuring device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112137935ATWI863607B (en) | 2023-10-03 | 2023-10-03 | High-speed, high-frequency and high-power wafer signal measurement device |
| Publication Number | Publication Date |
|---|---|
| TWI863607Btrue TWI863607B (en) | 2024-11-21 |
| TW202516645A TW202516645A (en) | 2025-04-16 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112137935ATWI863607B (en) | 2023-10-03 | 2023-10-03 | High-speed, high-frequency and high-power wafer signal measurement device |
| Country | Link |
|---|---|
| CN (1) | CN119757800A (en) |
| TW (1) | TWI863607B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI491897B (en)* | 2013-01-03 | 2015-07-11 | 矽品精密工業股份有限公司 | Testing apparatus and testing method for semiconductor element |
| US20180252765A1 (en)* | 2015-07-23 | 2018-09-06 | Tokyo Seimitsu Co., Ltd. | Prober |
| TWM639797U (en)* | 2022-02-10 | 2023-04-11 | 旺矽科技股份有限公司 | Wafer inspection system and ring seat thereof |
| TWM641397U (en)* | 2022-12-30 | 2023-05-21 | 致茂電子股份有限公司 | Wafer Inspection System |
| TWM650239U (en)* | 2023-10-03 | 2024-01-01 | 美達科技股份有限公司 | High-speed, high-frequency and high-power wafer signal measurement device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI491897B (en)* | 2013-01-03 | 2015-07-11 | 矽品精密工業股份有限公司 | Testing apparatus and testing method for semiconductor element |
| US20180252765A1 (en)* | 2015-07-23 | 2018-09-06 | Tokyo Seimitsu Co., Ltd. | Prober |
| TWM639797U (en)* | 2022-02-10 | 2023-04-11 | 旺矽科技股份有限公司 | Wafer inspection system and ring seat thereof |
| TWM641397U (en)* | 2022-12-30 | 2023-05-21 | 致茂電子股份有限公司 | Wafer Inspection System |
| TWM650239U (en)* | 2023-10-03 | 2024-01-01 | 美達科技股份有限公司 | High-speed, high-frequency and high-power wafer signal measurement device |
| Publication number | Publication date |
|---|---|
| TW202516645A (en) | 2025-04-16 |
| CN119757800A (en) | 2025-04-04 |
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