Movatterモバイル変換


[0]ホーム

URL:


TWI852839B - Air inlet system for semiconductor process equipment, semiconductor process equipment and air inlet method - Google Patents

Air inlet system for semiconductor process equipment, semiconductor process equipment and air inlet method
Download PDF

Info

Publication number
TWI852839B
TWI852839BTW112145002ATW112145002ATWI852839BTW I852839 BTWI852839 BTW I852839BTW 112145002 ATW112145002 ATW 112145002ATW 112145002 ATW112145002 ATW 112145002ATW I852839 BTWI852839 BTW I852839B
Authority
TW
Taiwan
Prior art keywords
storage tank
water
pipeline
air
water storage
Prior art date
Application number
TW112145002A
Other languages
Chinese (zh)
Other versions
TW202421829A (en
Inventor
劉振昊
Original Assignee
大陸商北京北方華創微電子裝備有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商北京北方華創微電子裝備有限公司filedCritical大陸商北京北方華創微電子裝備有限公司
Publication of TW202421829ApublicationCriticalpatent/TW202421829A/en
Application grantedgrantedCritical
Publication of TWI852839BpublicationCriticalpatent/TWI852839B/en

Links

Classifications

Landscapes

Abstract

An air inlet system for semiconductor process equipment, a semiconductor process equipment and an air inlet method. The air inlet system includes a water storage tank, an air storage tank, a water vapor transportation pipeline and an air supply pipeline. The water storage tank has a water inlet interface that can be switched on and off, and a first heating device is disposed on the water storage tank. Two ends of the water vapor transportation pipeline are connected with the air outlet of the water storage tank and the air inlet of the air storage tank respectively. The air storage tank can be connected on and off with the process chamber of the semiconductor process equipment through the air supply pipeline. When one of the water inlet interface and the water vapor transport pipeline is in a conductive state, the other is in a cut-off state. The present application can improve the air inlet stability of water vapor.

Description

Translated fromChinese
半導體製程設備的進氣系統、半導體製程設備及進氣方法Air intake system for semiconductor process equipment, semiconductor process equipment and air intake method

本申請屬於半導體技術領域,具體涉及一種半導體製程設備的進氣系統、半導體製程設備及進氣方法。This application belongs to the field of semiconductor technology, and specifically relates to an air intake system for semiconductor process equipment, semiconductor process equipment and an air intake method.

隨著半導體製程設備和半導體加工製程的快速發展,金屬刻蝕在半導體行業中應用越來越廣泛。在經過金屬刻蝕製程處理後,晶圓的表面易與製程氣體(如氯氣)形成副產物,且殘留在晶圓上的氯氣也易腐蝕晶圓內的金屬(如鋁)。因此經過金屬刻蝕製程處理後的晶圓需經去膠設備進氣系統處理後,才能送往下一道製程。With the rapid development of semiconductor process equipment and semiconductor processing, metal etching is increasingly used in the semiconductor industry. After the metal etching process, the surface of the wafer is prone to react with the process gas (such as chlorine) to form byproducts, and the chlorine remaining on the wafer is also prone to corrode the metal (such as aluminum) inside the wafer. Therefore, the wafer after the metal etching process needs to be processed by the degumming equipment intake system before it can be sent to the next process.

去膠設備進氣系統常用製程氣體包括氧氣、水蒸氣、氮氣等,在去膠設備進氣系統腔體內部高溫和微波作用下,氧氣可去除晶圓表面殘膠和副產物,形成可揮發的二氧化碳和一氧化碳氣體,而水蒸氣可與副產物中的氯氣結合形成揮發性更好的氯化氫氣體,進而帶走殘餘的氯氣。在進行去膠處理時,若水蒸氣的進氣流量不穩定,則易造成去膠設備進氣系統的去氯效果不佳,同時也會降低去膠速率,從而造成光刻膠殘留於晶圓上的問題。因此,提升水蒸氣的進氣穩定性是去膠設備進氣系統等半導體製程設備的關鍵技術之一。Common process gases used in the desincing equipment air intake system include oxygen, water vapor, nitrogen, etc. Under the high temperature and microwave action inside the desincing equipment air intake system cavity, oxygen can remove residual adhesive and by-products on the wafer surface to form volatile carbon dioxide and carbon monoxide gases, while water vapor can combine with chlorine in the by-products to form more volatile hydrogen chloride gas, thereby taking away residual chlorine. During desincing treatment, if the air intake flow rate of water vapor is unstable, it will easily cause poor dechlorination effect of the desincing equipment air intake system, and at the same time reduce the desincing rate, thereby causing the problem of photoresist residues remaining on the wafer. Therefore, improving the air intake stability of water vapor is one of the key technologies for semiconductor process equipment such as the desincing equipment air intake system.

本申請實施例的目的是提供一種半導體製程設備的進氣系統、半導體製程設備及進氣方法,能夠提升水蒸氣的進氣穩定性。The purpose of the embodiment of the present application is to provide an air intake system for semiconductor process equipment, semiconductor process equipment and air intake method, which can improve the air intake stability of water vapor.

為了解決上述技術問題,本申請是這樣實現的:In order to solve the above technical problems, this application is implemented as follows:

第一方面,本申請提供了一種半導體製程設備的進氣系統,包括儲水箱、儲氣箱、水蒸氣輸送管路和供氣管路,儲水箱具有可通斷的進水接口,且儲水箱上設有第一加熱裝置,水蒸氣輸送管路的兩端分別與儲水箱的出氣口和儲氣箱的進氣口相連通,儲氣箱通過供氣管路與半導體製程設備的製程腔室可通斷地連通,在進水接口和水蒸氣輸送管路中的一者處於導通狀態的情況下,另一者處於截止狀態。In the first aspect, the present application provides an air intake system for semiconductor process equipment, including a water storage tank, an air storage tank, a water vapor transport pipeline and an air supply pipeline. The water storage tank has a switchable water inlet interface, and a first heating device is provided on the water storage tank. The two ends of the water vapor transport pipeline are respectively connected to the air outlet of the water storage tank and the air inlet of the air storage tank. The air storage tank is switchably connected to the process chamber of the semiconductor process equipment through the air supply pipeline. When one of the water inlet interface and the water vapor transport pipeline is in a conducting state, the other is in a cutoff state.

第二方面,本申請提供了一種半導體製程設備,包括製程腔室和上述的進氣系統,進氣系統與製程腔室可通斷地連通。In a second aspect, the present application provides a semiconductor process equipment, including a process chamber and the above-mentioned air intake system, wherein the air intake system and the process chamber can be intermittently connected.

第三方面,本申請提供了一種進氣方法,應用於上述的進氣系統,包括:向儲水箱內通入液態水,直至儲水箱內的儲水量達到預設儲水量;將液態水加熱至預設溫度,控制水蒸氣輸送管路處於導通狀態,且進水接口處於截止狀態;當儲氣箱內的壓力達到預設壓力時,控制供氣管路處於導通狀態,且水蒸氣輸送管路處於截止狀態;當儲水箱內的儲水量低於補水儲水量時,控制水蒸氣輸送管路處於截止狀態,且進水接口處於導通狀態;當儲氣箱內的壓力低於補氣壓力時,控制進水接口處於截止狀態,且水蒸氣輸送管路處於導通狀態。On the third aspect, the present application provides an air intake method, which is applied to the above-mentioned air intake system, including: introducing liquid water into a water storage tank until the water storage volume in the water storage tank reaches a preset water storage volume; heating the liquid water to a preset temperature, controlling the water vapor transmission pipeline to be in a conductive state, and the water inlet interface to be in a cut-off state; when the pressure in the air storage tank reaches a preset pressure, controlling the air supply pipeline to be in a conductive state, and the water vapor transmission pipeline to be in a cut-off state; when the water storage volume in the water storage tank is lower than the water replenishment storage volume, controlling the water vapor transmission pipeline to be in a cut-off state, and the water inlet interface to be in a conductive state; when the pressure in the air storage tank is lower than the air replenishment pressure, controlling the water inlet interface to be in a cut-off state, and the water vapor transmission pipeline to be in a conductive state.

本申請實施例中,半導體製程設備的進氣系統包括儲水箱和儲氣箱,在使用時,可將儲水箱的進水接口與外界的進水管路相連接,從而向儲水箱內注入液態水,當儲水箱內的液態水達到預設儲水量時,控制進水接口及水蒸氣輸送管路處於截止狀態,而後開啟第一加熱裝置將儲水箱內的液態水加熱至預設溫度,此時儲水箱內可產生滿足製程需求的水蒸氣,而後可導通水蒸氣輸送管路且控制供氣管路處於截止狀態,使儲水箱內的水蒸氣進入至儲氣箱內,當儲氣箱內的壓力達到預設壓力時,控制供氣管路處於導通狀態,如此水蒸氣可進入製程腔室參與製程過程。In the embodiment of the present application, the air intake system of the semiconductor process equipment includes a water storage tank and an air storage tank. When in use, the water inlet interface of the water storage tank can be connected to the external water inlet pipeline, so as to inject liquid water into the water storage tank. When the liquid water in the water storage tank reaches the preset water storage volume, the water inlet interface and the water vapor transmission pipeline are controlled to be in a cut-off state, and then the first heating device is turned on to heat the water storage tank. The liquid water in the water storage tank is heated to a preset temperature. At this time, water vapor that meets the process requirements can be generated in the water storage tank. Then the water vapor transmission pipeline can be opened and the air supply pipeline can be controlled to be in a closed state, so that the water vapor in the water storage tank enters the air storage tank. When the pressure in the air storage tank reaches the preset pressure, the air supply pipeline is controlled to be in a conducting state, so that the water vapor can enter the process chamber to participate in the process.

本申請實施例中,在進水接口和水蒸氣輸送管路中的一者處於導通狀態的情況下,另一者處於截止狀態;也就是說,進水接口和水蒸氣輸送管路不能同時導通,即:在儲水箱內的儲水箱低於補水儲水量的情況下,控制水蒸氣輸送管路處於截止狀態,導通進水接口;在儲氣箱內的壓力低於補氣壓力時,截止進水接口,導通水蒸氣輸送管路。若儲水箱和儲氣箱同時導通,在儲水箱補水的過程中,常溫的液態水進入儲水箱內會降低儲水箱的溫度,從而使儲水箱內的部分水蒸氣冷凝,水蒸氣濃度降低,如此將使儲水箱內的水蒸氣在進入儲氣箱時流量不穩定,進而造成儲氣箱內的水蒸氣在進入製程腔室時流量不穩定。而本申請實施例的進水接口和水蒸氣輸送管路不同時導通,則可避免儲水箱在補水時產生的流量不穩定的水蒸氣進入儲氣箱,從而避免流量不穩定的水蒸氣進入製程腔室。In the embodiment of the present application, when one of the water inlet interface and the water vapor transport pipeline is in a conducting state, the other is in a cut-off state; that is, the water inlet interface and the water vapor transport pipeline cannot be conducted at the same time, that is: when the water storage tank in the water storage tank is lower than the replenishing water storage volume, the water vapor transport pipeline is controlled to be in a cut-off state and the water inlet interface is conducted; when the pressure in the gas storage tank is lower than the replenishing gas pressure, the water inlet interface is cut off and the water vapor transport pipeline is conducted. If the water storage tank and the air storage tank are connected at the same time, during the process of replenishing the water storage tank, liquid water at room temperature enters the water storage tank, which will lower the temperature of the water storage tank, thereby condensing part of the water vapor in the water storage tank and reducing the water vapor concentration. This will cause the flow of the water vapor in the water storage tank to be unstable when entering the air storage tank, thereby causing the flow of the water vapor in the air storage tank to be unstable when entering the process chamber. However, the water inlet interface and the water vapor delivery pipeline of the embodiment of the present application are not connected at the same time, which can prevent the water vapor with unstable flow generated when the water storage tank is replenished from entering the air storage tank, thereby preventing the water vapor with unstable flow from entering the process chamber.

下面將結合本申請實施例中的附圖,對本申請實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例是本申請一部分實施例,而不是全部的實施例。基於本申請中的實施例,本領域普通技術人員在沒有作出創造性勞動前提下所獲得的所有其他實施例,都屬於本申請保護的範圍。The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative labor are within the scope of protection of this application.

本申請的說明書和權利要求書中的術語“第一”、“第二”等是用於區別類似的物件,而不用於描述特定的順序或先後次序。應該理解這樣使用的資料在適當情況下可以互換,以便本申請的實施例能夠以除了在這裡圖示或描述的那些以外的順序實施,且“第一”、“第二”等所區分的對象通常為一類,並不限定物件的個數,例如第一物件可以是一個,也可以是多個。此外,說明書以及權利要求中“和/或”表示所連線物件的至少其中之一,字元“/”,一般表示前後關聯物件是一種“或”的關係。The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, rather than to describe a specific order or precedence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of this application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of the same type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and/or" in the specification and claims indicates at least one of the connected objects, and the character "/" generally indicates that the objects connected before and after are in an "or" relationship.

下面結合附圖,通過具體的實施例及其應用場景對本申請實施例提供的半導體製程設備的進氣系統、半導體製程設備及進氣方法進行詳細地說明。The following is a detailed description of the air intake system of the semiconductor process equipment, the semiconductor process equipment and the air intake method provided by the embodiment of the present application through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

如圖1至圖2所示,本申請實施例公開一種半導體製程設備的進氣系統,包括儲水箱100、儲氣箱200、水蒸氣輸送管路300和供氣管路400,儲水箱100具有可通斷的進水接口,且儲水箱100上設有第一加熱裝置260,水蒸氣輸送管路300的兩端分別與儲水箱100的出氣口和儲氣箱200的進氣口可通斷地相連通,儲氣箱200的出氣口通過供氣管路400與半導體製程設備的製程腔室500可通斷地連通,在進水接口和水蒸氣輸送管路300中的一者處於導通狀態的情況下,另一者處於截止狀態。As shown in Figures 1 and 2, the embodiment of the present application discloses an air intake system for semiconductor process equipment, including a water storage tank 100, an air storage tank 200, a water vapor transport pipeline 300 and an air supply pipeline 400. The water storage tank 100 has a water inlet interface that can be switched on and off, and a first heating device 260 is provided on the water storage tank 100. The two ends of the water vapor transport pipeline 300 are respectively connected to the air outlet of the water storage tank 100 and the air inlet of the air storage tank 200 in a switchable manner. The air outlet of the air storage tank 200 is connected to the process chamber 500 of the semiconductor process equipment in a switchable manner through the air supply pipeline 400. When one of the water inlet interface and the water vapor transport pipeline 300 is in a conducting state, the other is in a cutoff state.

本申請實施例中,半導體製程設備的進氣系統包括儲水箱100和儲氣箱200,在使用時,可將儲水箱100的進水接口與外界的進水管路700相連接,從而可通過進水管路700向儲水箱100內注入液態水,當儲水箱100內的液態水達到預設儲水量時,控制進水接口及水蒸氣輸送管路300處於截止狀態,而後開啟第一加熱裝置260將儲水箱100內的液態水加熱至預設溫度,此時儲水箱100內可產生滿足製程需求的水蒸氣,而後可導通水蒸氣輸送管路300且控制供氣管路400處於截止狀態,使儲水箱100內的水蒸氣進入至儲氣箱200內,當儲氣箱200內的壓力達到預設壓力時,控制供氣管路400處於導通狀態,如此水蒸氣可進入製程腔室500參與製程過程。In the embodiment of the present application, the air intake system of the semiconductor process equipment includes a water storage tank 100 and an air storage tank 200. When in use, the water inlet interface of the water storage tank 100 can be connected to the external water inlet pipeline 700, so that liquid water can be injected into the water storage tank 100 through the water inlet pipeline 700. When the liquid water in the water storage tank 100 reaches a preset water storage volume, the water inlet interface and the water vapor transport pipeline 300 are controlled to be in a cut-off state, and then the first heating device 260 is turned on to heat the water. The liquid water in the water storage tank 100 is heated to a preset temperature. At this time, water vapor that meets the process requirements can be generated in the water storage tank 100. Then, the water vapor delivery pipeline 300 can be opened and the air supply pipeline 400 can be controlled to be in a cut-off state, so that the water vapor in the water storage tank 100 enters the air storage tank 200. When the pressure in the air storage tank 200 reaches the preset pressure, the air supply pipeline 400 is controlled to be in a conducting state, so that the water vapor can enter the process chamber 500 to participate in the process.

可選地,本申請實施例在進行製程時,進水接口和水蒸氣輸送管路300可均處於截止狀態。在進水接口和水蒸氣輸送管路300中的一者處於導通狀態的情況下,另一者處於截止狀態;也就是說,進水接口和水蒸氣輸送管路300不能同時導通,即:在儲水箱100內的儲水箱100低於補水儲水量的情況下,控制水蒸氣輸送管路300處於截止狀態,導通進水接口;在儲氣箱200內的壓力低於補氣壓力時,截止進水接口,導通水蒸氣輸送管路300。若儲水箱100和儲氣箱200同時導通,在儲水箱100補水的過程中,常溫的液態水進入儲水箱100內會降低儲水箱100的溫度,從而使儲水箱100內的部分水蒸氣冷凝,水蒸氣濃度降低,如此將使儲水箱100內的水蒸氣在進入儲氣箱200時流量不穩定,進而造成儲氣箱200內的水蒸氣在進入製程腔室500時流量不穩定。而本申請實施例的進水接口和水蒸氣輸送管路300不同時導通,則可避免儲水箱100在補水時產生的流量不穩定的水蒸氣進入儲氣箱200,從而避免流量不穩定的水蒸氣進入製程腔室500。Optionally, when the process is being carried out in the embodiment of the present application, the water inlet interface and the water vapor delivery pipeline 300 can both be in a cut-off state. When one of the water inlet interface and the water vapor delivery pipeline 300 is in a conducting state, the other is in a cut-off state; that is, the water inlet interface and the water vapor delivery pipeline 300 cannot be conducted at the same time, that is: when the water storage tank 100 in the water storage tank 100 is lower than the water replenishment water storage volume, the water vapor delivery pipeline 300 is controlled to be in a cut-off state and the water inlet interface is conducted; when the pressure in the gas storage tank 200 is lower than the gas replenishment pressure, the water inlet interface is cut off and the water vapor delivery pipeline 300 is conducted. If the water storage tank 100 and the air storage tank 200 are connected at the same time, during the process of replenishing the water storage tank 100, liquid water at room temperature enters the water storage tank 100 to lower the temperature of the water storage tank 100, thereby condensing part of the water vapor in the water storage tank 100 and reducing the water vapor concentration. This will cause the flow of the water vapor in the water storage tank 100 to be unstable when entering the air storage tank 200, thereby causing the flow of the water vapor in the air storage tank 200 to be unstable when entering the process chamber 500. The water inlet interface and the water vapor transport pipeline 300 of the embodiment of the present application are not connected at the same time, which can prevent the water vapor with unstable flow generated when the water storage tank 100 is replenished from entering the air storage tank 200, thereby preventing the water vapor with unstable flow from entering the process chamber 500.

可選地,可在水蒸氣輸送管路300上設置第五開關閥310,或者其他具有可通斷管路作用的裝置,如在水蒸氣輸送管路300內可滑動地設置截斷板,通過調整截斷板的位置進而控制水蒸氣管路的通斷,以使得水蒸氣輸送管路300的兩端分別與儲水箱100的出氣口和儲氣箱200的進氣口可通斷地相連通。Optionally, a fifth switch valve 310 may be provided on the water vapor transport pipeline 300, or other devices capable of opening and closing the pipeline may be provided, such as a shutoff plate slidably provided in the water vapor transport pipeline 300, and the opening and closing of the water vapor pipeline may be controlled by adjusting the position of the shutoff plate, so that the two ends of the water vapor transport pipeline 300 are respectively connected to the air outlet of the water storage tank 100 and the air inlet of the air storage tank 200 in a disconnectable manner.

在一種可選的實施例中,供氣管路400上設有流量控制裝置410、第一開關閥420和第二開關閥430,流量控制裝置410位於第一開關閥420的下游,第二開關閥430位於流量控制裝置410的下游。在製程空閒時,需關閉第二開關閥430和流量控制裝置410,但是若未設有第一開關閥420,流量控制裝置410不能完全截止,也就是說,儲氣箱200內的水蒸氣會通過流量控制裝置410洩漏至供氣管路400的位於第二開關閥430和流量控制裝置410之間的第一管段,且第一管段內的壓力會不斷地增大;在進行下一次製程時,當開啟第二開關閥430和流量控制裝置410時,第一管段內儲存的較大壓力的水蒸氣會直接進入製程腔室500,造成製程腔室500內的壓力瞬間增大,如此易使水蒸氣與其他製程氣體的進氣比例不可控,影響製程結果;甚至可能觸發製程腔室500壓力過大的誤報警,進而造成設備宕機。因此,本申請實施例在流量控制裝置410的上游設有第一開關閥420,第一開關閥420關閉後,可在製程空閒時完全截斷水蒸氣,從而避免儲氣箱200內的水蒸氣洩漏至供氣管路400的位於第二開關閥430和流量控制裝置410之間的第一管段,進而避免上述問題產生。可選地,流量控制裝置410可為流量控制器(MFC),或者其他可控制流量大小的裝置。第一開關閥420、第二開關閥430以及下文所述的第三開關閥610、第四開關閥710、第五開關閥310、第六開關閥810、第七開關閥911和第八開關閥921均可為球閥、閘閥、截止閥、蝶閥等可通斷管道的閥門。In an optional embodiment, a flow control device 410, a first switch valve 420, and a second switch valve 430 are provided on the gas supply pipeline 400. The flow control device 410 is located downstream of the first switch valve 420, and the second switch valve 430 is located downstream of the flow control device 410. When the process is idle, the second switch valve 430 and the flow control device 410 need to be closed. However, if the first switch valve 420 is not provided, the flow control device 410 cannot be completely shut off, that is, the water vapor in the gas storage box 200 will leak through the flow control device 410 to the first pipe section of the gas supply pipeline 400 between the second switch valve 430 and the flow control device 410, and the pressure in the first pipe section will continue to increase. When the next process is carried out, when the second switch valve 430 and the flow control device 410 are opened, the water vapor with a relatively high pressure stored in the first pipe section will directly enter the process chamber 500, causing the pressure in the process chamber 500 to increase instantly. This may easily make the intake ratio of water vapor and other process gases uncontrollable, affecting the process results; it may even trigger a false alarm of excessive pressure in the process chamber 500, thereby causing equipment downtime. Therefore, the embodiment of the present application is provided with a first switch valve 420 upstream of the flow control device 410. After the first switch valve 420 is closed, the water vapor can be completely cut off when the process is idle, thereby preventing the water vapor in the gas storage box 200 from leaking to the first pipe section of the gas supply pipeline 400 between the second switch valve 430 and the flow control device 410, thereby avoiding the above-mentioned problem. Optionally, the flow control device 410 can be a flow controller (MFC) or other device that can control the flow size. The first switch valve 420, the second switch valve 430 and the third switch valve 610, the fourth switch valve 710, the fifth switch valve 310, the sixth switch valve 810, the seventh switch valve 911 and the eighth switch valve 921 described below can all be valves such as ball valves, gate valves, stop valves, butterfly valves, etc. that can open and close pipelines.

可選地,進氣系統還包括混氣管路910,混氣管路910的第一端與供氣管路400可通斷地相連通,且混氣管路910的第一端位於第二開關閥430的下游。可通過混氣管路910向供氣管路400中通入氧氣或氮氣等製程氣體,水蒸氣和製程氣體形成混合水蒸氣後進入製程腔室500。進一步地,混氣管路910上設有第七開關閥911。Optionally, the air intake system further includes a gas mixing pipeline 910, the first end of which is intermittently connected to the gas supply pipeline 400, and the first end of the gas mixing pipeline 910 is located downstream of the second switch valve 430. Process gases such as oxygen or nitrogen can be introduced into the gas supply pipeline 400 through the gas mixing pipeline 910, and the water vapor and the process gas form mixed water vapor and enter the process chamber 500. Furthermore, a seventh switch valve 911 is provided on the gas mixing pipeline 910.

在一種可選的實施例中,進氣系統還包括抽吸管路600,抽吸管路600的第一端與供氣管路400可通斷地相連通,抽吸管路600的第一端位於流量控制裝置410和第二開關閥430之間。本申請實施例設有抽吸管路600,在使用時,抽吸管路600的第二端可與負壓設備或與呈負壓的空間相連通。在製程空閒時,需關閉第一開關閥420和第二開關閥430,上述兩個開關閥關閉後,仍可能有部分的水蒸氣殘留于供氣管路400的位於第一開關閥420和第二開關閥430之間的第二管段內,導通抽吸管路600後,可抽吸出第二管段內的殘留的水蒸氣,進而防止產生殘留的水蒸氣在下次製程時瞬間增大製程腔室500內的壓力的問題。另外,還可通過抽吸管路600抽吸出儲水箱100內的空氣,進而避免在往儲水箱100內注水的過程中,由於液態水進入儲水箱100而使儲水箱100內的壓力升高,導致儲水箱100內的儲水量達到一定量後無法進水,進而導致儲水量長時間無法滿足的問題。除此之外,還可通過抽吸管路600抽吸出儲氣箱200內的空氣,一方面可降低儲氣箱200內的壓力,使儲水箱100中產生的水蒸氣能夠進入到儲氣箱200中;另一方面可抽吸出儲氣箱200內的空氣,保證水蒸氣的氣體純度。可選地,抽吸管路600上設有第三開關閥610。當然也可設置其他具有可通斷管路作用的裝置,以使抽吸管路600的第一端與供氣管路400可通斷地相連通。進一步地,抽吸管路600上還設有第一單向閥620,第一單向閥620的導通方向為由抽吸管路600的第一端向第二端延伸的方向,從而防止產生在抽吸管路600異常時,抽吸管路600中的氣體反灌至供氣管路400內,污染供氣管路400的問題。In an optional embodiment, the intake system further includes a suction line 600, the first end of which is intermittently connected to the air supply line 400, and the first end of the suction line 600 is located between the flow control device 410 and the second switch valve 430. The embodiment of the present application is provided with a suction line 600, and when in use, the second end of the suction line 600 can be connected to a negative pressure device or a negative pressure space. When the process is idle, the first switch valve 420 and the second switch valve 430 need to be closed. After the above two switch valves are closed, some water vapor may still remain in the second pipe section of the gas supply pipeline 400 located between the first switch valve 420 and the second switch valve 430. After the suction pipeline 600 is connected, the residual water vapor in the second pipe section can be sucked out, thereby preventing the residual water vapor from instantly increasing the pressure in the process chamber 500 during the next process. In addition, the air in the water storage tank 100 can be sucked out through the suction pipeline 600, thereby avoiding the problem that the pressure in the water storage tank 100 increases due to liquid water entering the water storage tank 100 during the process of filling the water storage tank 100, resulting in the water storage tank 100 being unable to enter water after the water storage volume reaches a certain amount, thereby causing the water storage volume to be insufficient for a long time. In addition, the air in the air storage tank 200 can be sucked out through the suction pipeline 600, which can reduce the pressure in the air storage tank 200 on the one hand, so that the water vapor generated in the water storage tank 100 can enter the air storage tank 200; on the other hand, the air in the air storage tank 200 can be sucked out to ensure the gas purity of the water vapor. Optionally, a third switch valve 610 is provided on the suction pipeline 600. Of course, other devices capable of opening and closing the pipeline may also be provided so that the first end of the suction pipeline 600 can be connected to the gas supply pipeline 400 in an openable and closed manner. Furthermore, a first check valve 620 is also provided on the suction pipeline 600, and the conducting direction of the first check valve 620 is the direction extending from the first end of the suction pipeline 600 to the second end, thereby preventing the problem of gas in the suction pipeline 600 backflowing into the gas supply pipeline 400 and contaminating the gas supply pipeline 400 when the suction pipeline 600 is abnormal.

在一種可選的實施例中,進氣系統還包括進水管路700,進水管路700可通斷地與進水接口相連通,進水管路700上設有流量檢測裝置720,儲水箱100設有液位檢測裝置110,流量檢測裝置720和液位檢測裝置110均用於獲取儲水箱100內的儲水量,當然,在實際應用中,流量檢測裝置720還可以用於通過檢測儲水箱100的進水流量來獲取其他相關參數,液位檢測裝置110還可以用於通過檢測儲水箱100內的液位來獲得其他相關參數,本申請並不以此為限。具體地,流量檢測裝置720用於檢測儲水箱100的進水流量,通過進水流量和進水時間可獲取到儲水箱100內的儲水量,液位檢測裝置110用於檢測儲水箱100內的液位,通過儲水箱100內液位的高度可獲取到儲水箱100內的儲水量。在使用時,流量檢測裝置720獲取到的儲水量和液位檢測裝置110獲取到的儲水量可相互校核,以提高儲水量的判斷準確性;另外,通過流量檢測裝置720檢測到的參數和液位檢測裝置110檢測到的參數,可判斷流量檢測裝置720和液位檢測裝置110是否處於正常狀態。具體的判斷過程如下:在廠務供水正常,且儲水箱100在補水時,若流量檢測裝置720檢測到進水流量穩定,但液位檢測裝置110檢測到儲水箱100內的液位未發生變化,這時候液位檢測裝置110可能處於不正常的狀態;在廠務供水不正常,且流量檢測裝置720檢測到進水流量為零時,若液位檢測裝置110檢測到儲水箱100內的液位還在逐漸升高,這時候液位檢測裝置110可能處於不正常的狀態。可選地,可在進水管路700上設置第四開關閥710或者其他具有可通斷管路作用的裝置,以使進水管路700可通斷地與進水接口相連通。流量檢測裝置720可為流量感測器,液位檢測裝置110可為液位感測器。進一步地,進水管路700上還設有第九開關閥730,第九開關閥730位於第四開關閥710的上游。In an optional embodiment, the air intake system further includes a water inlet pipe 700, which can be intermittently connected to the water inlet interface. The water inlet pipe 700 is provided with a flow detection device 720, and the water storage tank 100 is provided with a liquid level detection device 110. The flow detection device 720 and the liquid level detection device 110 are both used to obtain the water storage volume in the water storage tank 100. Of course, in actual applications, the flow detection device 720 can also be used to obtain other relevant parameters by detecting the water inlet flow of the water storage tank 100, and the liquid level detection device 110 can also be used to obtain other relevant parameters by detecting the liquid level in the water storage tank 100, but the present application is not limited to this. Specifically, the flow detection device 720 is used to detect the water inflow flow of the water storage tank 100. The water storage amount in the water storage tank 100 can be obtained through the water inflow flow and water inflow time. The liquid level detection device 110 is used to detect the liquid level in the water storage tank 100. The water storage amount in the water storage tank 100 can be obtained through the height of the liquid level in the water storage tank 100. When in use, the water storage volume obtained by the flow detection device 720 and the water storage volume obtained by the liquid level detection device 110 can be calibrated against each other to improve the accuracy of the water storage volume judgment; in addition, through the parameters detected by the flow detection device 720 and the parameters detected by the liquid level detection device 110, it can be judged whether the flow detection device 720 and the liquid level detection device 110 are in a normal state. The specific judgment process is as follows: when the factory water supply is normal and the water storage tank 100 is being replenished with water, if the flow detection device 720 detects that the water inlet flow is stable, but the liquid level detection device 110 detects that the liquid level in the water storage tank 100 has not changed, then the liquid level detection device 110 may be in an abnormal state; when the factory water supply is abnormal and the flow detection device 720 detects that the water inlet flow is zero, if the liquid level detection device 110 detects that the liquid level in the water storage tank 100 is still gradually rising, then the liquid level detection device 110 may be in an abnormal state. Optionally, a fourth switch valve 710 or other device capable of opening and closing the pipeline may be provided on the water inlet pipeline 700, so that the water inlet pipeline 700 can be connected to the water inlet interface in an open and close manner. The flow detection device 720 may be a flow sensor, and the liquid level detection device 110 may be a liquid level sensor. Furthermore, a ninth switch valve 730 is provided on the water inlet pipeline 700, and the ninth switch valve 730 is located upstream of the fourth switch valve 710.

可選地,進氣系統還包括吹掃管路920和排水管路800,吹掃管路920的第一端可通斷地與進水管路700相連通,排水管路800的第一端可通斷地與儲水箱100的排汙接口相連通,吹掃管路920的第二端用於連接吹掃氣源,吹掃氣體可為氮氣。在清洗儲水箱100時,可導通排水管路800和吹掃管路920,排出儲水箱100箱內的液態水,此時通過向吹掃管路920輸入吹掃氣體,以平衡儲水箱100內的氣壓。另外,可通過向吹掃管路920輸入吹掃氣體,以吹掃水蒸氣輸送管路300、儲氣箱200和供氣管路400。進一步地,吹掃管路920上設有第八開關閥921和第二單向閥922,排水管路800上設有第六開關閥810。第二單向閥922的導通方向為由排水管路800的第二端向排水管路800的第一端延伸的方向。Optionally, the air intake system further includes a purge pipeline 920 and a drain pipeline 800. The first end of the purge pipeline 920 can be intermittently connected to the water intake pipeline 700, the first end of the drain pipeline 800 can be intermittently connected to the sewage discharge interface of the water storage tank 100, and the second end of the purge pipeline 920 is used to connect to a purge gas source, and the purge gas can be nitrogen. When cleaning the water storage tank 100, the drain pipeline 800 and the purge pipeline 920 can be connected to discharge the liquid water in the water storage tank 100. At this time, the purge gas is input into the purge pipeline 920 to balance the air pressure in the water storage tank 100. In addition, the water vapor delivery pipeline 300, the gas storage box 200 and the gas supply pipeline 400 can be purged by inputting purging gas into the purging pipeline 920. Furthermore, an eighth switch valve 921 and a second check valve 922 are provided on the purging pipeline 920, and a sixth switch valve 810 is provided on the drainage pipeline 800. The conduction direction of the second check valve 922 is the direction extending from the second end of the drainage pipeline 800 to the first end of the drainage pipeline 800.

可選地,第一加熱裝置260也可為常規的電加熱器,但常規的電加熱器無法對液態水進行均勻地加熱,也就是說,可能存在儲水箱100內的液態水的一部分已被加熱,另一部分未被加熱的問題。因此在一種可選的實施例中,第一加熱裝置260包裹儲水箱100,如此可使第一加熱裝置260實現對液態水均勻地加熱。進氣系統還包括第二加熱裝置210,第二加熱裝置210包裹水蒸氣輸送管路300、儲氣箱200和供氣管路400,第二加熱裝置210的加熱溫度大於或等於第一加熱裝置260的加熱溫度。若未設置第二加熱裝置210,水蒸氣在經過水蒸氣輸送管路300、儲氣箱200和供氣管路400時,由於水蒸氣輸送管路300、儲氣箱200和供氣管路400的溫度相對較低,因此可能會使得水蒸氣遇冷液化,進而造成進入製程腔室500內的水蒸氣的流量不穩定。本申請實施例設有第二加熱裝置210,且第二加熱裝置210的加熱溫度大於或等於第一加熱裝置260的加熱溫度,因此可避免水蒸氣遇冷液化。另外,第二加熱裝置210可分為三個加熱段,三個加熱段分別一一對應地包裹水蒸氣輸送管路300、儲氣箱200和供氣管路400,進而實現獨立控制每個加熱段的加熱溫度。當然,第二加熱裝置210也可分為兩個加熱段。第一加熱裝置260和第二加熱裝置210均可為採用電加熱的方式或換熱的方式對液態水進行加熱。Alternatively, the first heating device 260 may also be a conventional electric heater, but a conventional electric heater cannot uniformly heat the liquid water, that is, there may be a problem that part of the liquid water in the water storage tank 100 has been heated, while the other part has not been heated. Therefore, in an optional embodiment, the first heating device 260 wraps the water storage tank 100, so that the first heating device 260 can achieve uniform heating of the liquid water. The intake system also includes a second heating device 210, which wraps the water vapor transport pipeline 300, the air storage tank 200 and the air supply pipeline 400, and the heating temperature of the second heating device 210 is greater than or equal to the heating temperature of the first heating device 260. If the second heating device 210 is not provided, when the water vapor passes through the water vapor delivery pipeline 300, the gas storage box 200 and the gas supply pipeline 400, the water vapor may be cooled and liquefied due to the relatively low temperatures of the water vapor delivery pipeline 300, the gas storage box 200 and the gas supply pipeline 400, thereby causing an unstable flow rate of the water vapor entering the process chamber 500. The embodiment of the present application is provided with the second heating device 210, and the heating temperature of the second heating device 210 is greater than or equal to the heating temperature of the first heating device 260, so that the water vapor can be prevented from being cooled and liquefied. In addition, the second heating device 210 can be divided into three heating sections, and the three heating sections respectively enclose the water vapor transmission pipeline 300, the gas storage box 200 and the gas supply pipeline 400, thereby realizing independent control of the heating temperature of each heating section. Of course, the second heating device 210 can also be divided into two heating sections. The first heating device 260 and the second heating device 210 can both use electric heating or heat exchange to heat the liquid water.

在一種可選的實施例中,進氣系統還包括第一溫度檢測件、第二溫度檢測件230、第一過溫開關240和第二過溫開關250,第一溫度檢測件和第一過溫開關240均設置于儲水箱100,第二溫度檢測件230和第二過溫開關250均設置于儲氣箱200。第一溫度檢測件可緊貼儲水箱100的外壁設置,用於檢測儲水箱100的溫度,第二溫度檢測件230可緊貼儲氣箱200的外壁設置,用於檢測儲氣箱200的溫度。在儲水箱100的溫度過高時,第一過溫開關240可輸出報警信號並可關閉第一加熱裝置260,在儲氣箱200的溫度過高時,第二過溫開關250可輸出報警信號並可關閉第二加熱裝置210,如此可避免第一加熱裝置260和第二加熱裝置210損壞,且可減小安全隱患。In an optional embodiment, the air intake system further includes a first temperature detection component, a second temperature detection component 230, a first over-temperature switch 240, and a second over-temperature switch 250. The first temperature detection component and the first over-temperature switch 240 are both disposed in the water storage tank 100, and the second temperature detection component 230 and the second over-temperature switch 250 are both disposed in the air storage tank 200. The first temperature detection component can be disposed in close contact with the outer wall of the water storage tank 100 to detect the temperature of the water storage tank 100, and the second temperature detection component 230 can be disposed in close contact with the outer wall of the air storage tank 200 to detect the temperature of the air storage tank 200. When the temperature of the water storage tank 100 is too high, the first over-temperature switch 240 can output an alarm signal and turn off the first heating device 260. When the temperature of the air storage tank 200 is too high, the second over-temperature switch 250 can output an alarm signal and turn off the second heating device 210. This can avoid damage to the first heating device 260 and the second heating device 210 and reduce safety hazards.

可選地,儲氣箱200上設有壓力檢測裝置220,以用於檢測儲氣箱200內的壓力。Optionally, a pressure detection device 220 is provided on the air storage box 200 to detect the pressure inside the air storage box 200 .

如圖6所示,本申請實施例還公開一種半導體製程設備,該半導體製程設備包括製程腔室500和上述任意實施例所述的進氣系統,進氣系統與製程腔室500可通斷地連通,也就是說,儲氣箱200可通過供氣管路400與製程腔室500可通斷地連通。As shown in Figure 6, the embodiment of the present application also discloses a semiconductor process equipment, which includes a process chamber 500 and the air intake system described in any of the above embodiments. The air intake system and the process chamber 500 can be connected in a continuous manner, that is, the air storage box 200 can be connected in a continuous manner with the process chamber 500 through the air supply pipeline 400.

在一種可選的實施例中,半導體製程設備還包括機台主體930、處理模組931、通訊模組932、類比量輸入模組933、數位量輸入模組934、數位量輸出模組935和溫控模組936,處理模組931通過通訊模組932與機台主體930電連接,處理模組931分別與類比量輸入模組933、數位量輸入模組934、數位量輸出模組935電連接,溫控模組936與第一加熱裝置260電連接。數位量輸入模組934可分別與第一過溫開關240和第二過溫開關250電連接,溫控模組936可分別與第一加熱裝置260和第二加熱裝置210電連接,數位量輸出模組935可與第一開關閥420、第四開關閥710、第五開關閥310和第六開關閥810電連接,數位量輸入模組934可分別與流量檢測裝置720、液位檢測裝置110、壓力檢測裝置220、第一溫度檢測件和第二溫度檢測件230電連接,流量控制裝置410可與通訊模組932電連接。具體地,處理模組931可以16位元MSP430F系列單片機為核心,負責信號處理和邏輯運算,包括通過通訊模組932與半導體製程設備的機台主體930通訊,接收機台主體930下發的控制資訊,並將系統自身狀態回饋給機台主體930,且通訊模組932可支援Ethernet、Devicenet、RS485等多種通訊協定,便於與機台主體930或其他調試電腦連接;同時,處理模組931通過類比量輸入模組933接收液位檢測裝置110、壓力檢測裝置220、第一溫度檢測件、第二溫度檢測件230以及流量檢測裝置720回饋的類比量信號,並將該類比量信號轉化成對應的液位、壓力或溫度、流量等資訊,通過數位量輸入模組934接收第一過溫開關240和第二過溫開關250的過溫信號,通過數位量輸出模組935控制各個開關閥的打開或關閉,如第一開關閥420、第四開關閥710、第五開關閥310和第六開關閥810;可通過人為或自動流程來控制機台主體930,從而控制各第一開關閥420、第四開關閥710、第五開關閥310和第六開關閥810的打開或關閉,並協調處理模組931來實現進氣系統的水蒸氣進氣控制。溫控模組936可分別控制第一加熱裝置260和第二加熱裝置210的溫度。進一步地,半導體製程設備還包括電源模組937和機台電源盒938,機台電源盒938分別與電源模組937和機台主體930電連接。機台電源盒938可分別給機台主體930和電源模組937供電,電源模組937可給各模組供電。In an optional embodiment, the semiconductor process equipment further includes a machine body 930, a processing module 931, a communication module 932, an analog quantity input module 933, a digital quantity input module 934, a digital quantity output module 935 and a temperature control module 936. The processing module 931 is electrically connected to the machine body 930 through the communication module 932. The processing module 931 is electrically connected to the analog quantity input module 933, the digital quantity input module 934, and the digital quantity output module 935 respectively. The temperature control module 936 is electrically connected to the first heating device 260. The digital input module 934 can be electrically connected to the first over-temperature switch 240 and the second over-temperature switch 250 respectively, the temperature control module 936 can be electrically connected to the first heating device 260 and the second heating device 210 respectively, the digital output module 935 can be electrically connected to the first switch valve 420, the fourth switch valve 710, the fifth switch valve 310 and the sixth switch valve 810, the digital input module 934 can be electrically connected to the flow detection device 720, the liquid level detection device 110, the pressure detection device 220, the first temperature detection component and the second temperature detection component 230 respectively, and the flow control device 410 can be electrically connected to the communication module 932. Specifically, the processing module 931 can be based on a 16-bit MSP430F series microcontroller, and is responsible for signal processing and logic operations, including communicating with the machine body 930 of the semiconductor process equipment through the communication module 932, receiving control information issued by the machine body 930, and feeding back the system's own status to the machine body 930. The communication module 932 can support multiple communication protocols such as Ethernet, Devicenet, RS485, etc., which is convenient for connecting with the machine body 930 or other debugging computers; at the same time, the processing module 931 receives the liquid level detection device 110, the pressure detection device 220, the first temperature detection component, the second temperature detection component 230, and the flow rate through the analog input module 933. The detection device 720 feeds back an analog signal, and converts the analog signal into corresponding information such as liquid level, pressure or temperature, flow, etc. The digital input module 934 receives the over-temperature signal of the first over-temperature switch 240 and the second over-temperature switch 250, and the digital output module 935 controls the opening or closing of each switch valve, such as the first switch valve 420, The fourth switch valve 710, the fifth switch valve 310 and the sixth switch valve 810 can control the machine body 930 through a manual or automatic process, thereby controlling the opening or closing of each of the first switch valve 420, the fourth switch valve 710, the fifth switch valve 310 and the sixth switch valve 810, and coordinating the processing module 931 to achieve the water vapor intake control of the intake system. The temperature control module 936 can control the temperature of the first heating device 260 and the second heating device 210 respectively. Further, the semiconductor process equipment also includes a power module 937 and a machine power box 938, and the machine power box 938 is electrically connected to the power module 937 and the machine body 930 respectively. The machine power box 938 can supply power to the machine body 930 and the power module 937 respectively, and the power module 937 can supply power to each module.

可選地,第二開關閥430、第三開關閥610、第七開關閥911、第八開關閥921和第九開關閥730可為氣動閥,機台主體930分別與上述各氣動閥電連接。第一開關閥420、第四開關閥710、第五開關閥310和第六開關閥810可為電磁閥。進一步地,半導體製程設備還包括電磁閥組940,第二開關閥430、第三開關閥610、第七開關閥911、第八開關閥921和第九開關閥730分別與電磁閥組940電連接,機台主體930可控制電磁閥組940動作,進而控制第二開關閥430、第三開關閥610、第七開關閥911、第八開關閥921和第九開關閥730的開閉。Optionally, the second switch valve 430, the third switch valve 610, the seventh switch valve 911, the eighth switch valve 921 and the ninth switch valve 730 may be pneumatic valves, and the machine body 930 is electrically connected to each of the pneumatic valves. The first switch valve 420, the fourth switch valve 710, the fifth switch valve 310 and the sixth switch valve 810 may be electromagnetic valves. Furthermore, the semiconductor process equipment also includes an electromagnetic valve group 940, and the second switch valve 430, the third switch valve 610, the seventh switch valve 911, the eighth switch valve 921 and the ninth switch valve 730 are electrically connected to the electromagnetic valve group 940 respectively. The machine body 930 can control the movement of the electromagnetic valve group 940, and then control the opening and closing of the second switch valve 430, the third switch valve 610, the seventh switch valve 911, the eighth switch valve 921 and the ninth switch valve 730.

如圖3至圖5所示,本申請實施例還公開了一種進氣方法,其應用于上述任一項實施例所記載的進氣系統,包括:As shown in FIG. 3 to FIG. 5 , the present application embodiment also discloses an air intake method, which is applied to the air intake system described in any of the above embodiments, including:

S100、向儲水箱100內通入液態水,直至儲水箱100內的儲水量達到預設儲水量;S100, liquid water is introduced into the water storage tank 100 until the water storage volume in the water storage tank 100 reaches a preset water storage volume;

可通過儲水箱100的進水接口通入液態水,這裡的預設儲水量可根據不同的製程需求來確定,預設儲水量位於溢流儲水量和補水儲水量之間。Liquid water can be introduced through the water inlet interface of the water storage tank 100. The preset water storage volume here can be determined according to different process requirements. The preset water storage volume is between the overflow water storage volume and the replenishment water storage volume.

S200、將液態水加熱至預設溫度,控制水蒸氣輸送管路300處於導通狀態,且進水接口處於截止狀態;S200, heating the liquid water to a preset temperature, controlling the water vapor delivery pipeline 300 to be in a conducting state, and the water inlet interface to be in a cut-off state;

這裡的預設溫度為可使液態水產生滿足製程需求的水蒸氣時的溫度,具體可根據不同的製程需求來確定,如預設溫度可為85~95℃。可選地,預設溫度不超過95℃,當液態水的溫度超過95℃時,儲水箱100內的液面會波動,如此會造成液位檢測裝置110檢測到的液位不準確。打開第五開關閥310,關閉第四開關閥710,即可使水蒸氣輸送管路300處於導通狀態,且進水接口處於截止狀態,此時儲水箱100的進水接口停止通入液態水,且儲水箱100中的水蒸氣通過水蒸氣輸送管路300通入儲氣箱200。The preset temperature here is the temperature at which the liquid water can generate water vapor that meets the process requirements. It can be determined according to different process requirements, such as the preset temperature can be 85~95°C. Optionally, the preset temperature does not exceed 95°C. When the temperature of the liquid water exceeds 95°C, the liquid level in the water storage tank 100 will fluctuate, which will cause the liquid level detected by the liquid level detection device 110 to be inaccurate. Opening the fifth switch valve 310 and closing the fourth switch valve 710 can make the water vapor transmission pipeline 300 in a conducting state and the water inlet interface in a cut-off state. At this time, the water inlet interface of the water storage tank 100 stops entering liquid water, and the water vapor in the water storage tank 100 enters the gas storage tank 200 through the water vapor transmission pipeline 300.

S300、當儲氣箱200內的壓力達到預設壓力時,控制供氣管路400處於導通狀態,且水蒸氣輸送管路300處於截止狀態;S300, when the pressure in the air storage box 200 reaches the preset pressure, the air supply pipeline 400 is controlled to be in a conducting state, and the water vapor transport pipeline 300 is in a cut-off state;

這裡的預設壓力小於儲水箱100內的氣體壓力,且大於補氣壓力,補氣壓力大於流量控制裝置410的啟動壓力,流量控制裝置410的啟動壓力大於製程腔室500的工作壓力,具體可根據不同的製程需求來確定。打開第一開關閥420、流量控制裝置410和第二開關閥430,關閉第五開關閥310,即可使控制供氣管路400處於導通狀態,且水蒸氣輸送管路300處於截止狀態,此時停止通過水蒸氣輸送管路300向儲氣箱200通入水蒸氣,且儲氣箱200中的水蒸氣通過供氣管路400通入製程腔室500。The preset pressure here is less than the gas pressure in the water storage tank 100 and greater than the replenishing air pressure. The replenishing air pressure is greater than the starting pressure of the flow control device 410. The starting pressure of the flow control device 410 is greater than the working pressure of the process chamber 500. The specific pressure can be determined according to different process requirements. By opening the first switch valve 420, the flow control device 410 and the second switch valve 430, and closing the fifth switch valve 310, the gas supply pipeline 400 can be controlled to be in a conducting state, and the water vapor transport pipeline 300 is in a cut-off state. At this time, water vapor is stopped from being introduced into the gas storage box 200 through the water vapor transport pipeline 300, and the water vapor in the gas storage box 200 is introduced into the process chamber 500 through the gas supply pipeline 400.

S400、當儲水箱100內的儲水量低於補水儲水量時,控制水蒸氣輸送管路300處於截止狀態,且進水接口處於導通狀態;S400, when the water storage volume in the water storage tank 100 is lower than the water replenishment storage volume, the water vapor transmission pipeline 300 is controlled to be in a cut-off state, and the water inlet interface is in a conducting state;

補水儲水量可根據不同的製程需求來確定。The amount of water replenishment and storage can be determined according to different process requirements.

S500、當儲氣箱200內的壓力低於補氣壓力時,控制進水接口處於截止狀態,且水蒸氣輸送管路300處於導通狀態。S500: When the pressure in the air storage tank 200 is lower than the air supply pressure, the water inlet interface is controlled to be in a cut-off state, and the water vapor transport pipeline 300 is in a conducting state.

補氣壓力可根據不同的製程需求來確定。The air filling pressure can be determined according to different process requirements.

需要說明的是,根據溫度與飽和水蒸氣壓力關係、理想氣態方程pV=nRT(其中p代表氣體壓強,V代表氣體體積,n代表氣體物質的量,T代表體系溫度,R為比例係數)、氣體品質與物質的量關係m=M×n(m代表氣體品質,M為摩爾質量,n代表氣體物質的量),可知在製程過程中,水蒸氣逐漸由儲氣箱200進入製程腔室500,從儲氣箱200進入製程腔室500的水蒸氣的體積可根據流量控制裝置410設定的流量和時間計算得出。根據上述各公式計算儲氣箱200內的水蒸氣可支援製程所需水蒸氣流量的製程時間(記為t1),同時根據進水流量、液態水的蒸發潛熱和第一加熱裝置260的加熱功率可計算出儲水箱100的補水和加熱的時間(記為t2),可得出t1>t2,也就是說,儲水箱100內的液態水由補水儲水量至預設儲水量的補水時間及加熱蒸發的時間之和小於製程腔室500消耗水蒸氣的時間,因此本申請實施例是可實現的。It should be noted that, based on the relationship between temperature and saturated water vapor pressure, the ideal gas equation pV=nRT (where p represents gas pressure, V represents gas volume, n represents the amount of gas substance, T represents system temperature, and R is the proportionality coefficient), and the relationship between gas quality and substance quantity m=M×n (m represents gas quality, M is molar mass, and n represents the amount of gas substance), it can be seen that during the process, water vapor gradually enters the process chamber 500 from the gas storage box 200, and the volume of water vapor entering the process chamber 500 from the gas storage box 200 can be calculated based on the flow rate and time set by the flow control device 410. According to the above formulas, the process time (denoted as t1 ) that the water vapor in the gas storage box 200 can support the water vapor flow rate required by the process can be calculated. At the same time, the water replenishment and heating time of the water storage tank 100 can be calculated according to the water inlet flow rate, the evaporation latent heat of the liquid water and the heating power of the first heating device 260. It can be obtained that t1 > t2, that is, the sum of the replenishment time and the heating and evaporation time of the liquid water in the water storage tank 100 from the replenishment water storage volume to the preset water storage volume is less than the time for the process chamber 500 to consume water vapor. Therefore, the embodiment of the present application is achievable.

本申請實施例在進行製程時,進水接口和水蒸氣輸送管路300可均處於截止狀態。在進水接口和水蒸氣輸送管路300中的一者處於導通狀態的情況下,另一者處於截止狀態;也就是說,進水接口和水蒸氣輸送管路300不能同時導通,即:在儲水箱100內的儲水箱100低於補水儲水量的情況下,控制水蒸氣輸送管路300處於截止狀態,導通進水接口;在儲氣箱200內的壓力低於補氣壓力時,截止進水接口,導通水蒸氣輸送管路300。若儲水箱100和儲氣箱200同時導通,在儲水箱100補水的過程中,常溫的液態水進入儲水箱100內會降低儲水箱100的溫度,從而使儲水箱100內的部分水蒸氣冷凝,水蒸氣濃度降低,如此將使儲水箱100內的水蒸氣在進入儲氣箱200時流量不穩定,進而造成儲氣箱200內的水蒸氣在進入製程腔室500時流量不穩定。而本申請實施例的進水接口和水蒸氣輸送管路300不同時導通,則可避免儲水箱100在補水時產生的流量不穩定的水蒸氣進入儲氣箱200,從而避免流量不穩定的水蒸氣進入製程腔室500。When the process of the embodiment of the present application is being carried out, the water inlet interface and the water vapor delivery pipeline 300 can both be in a cut-off state. When one of the water inlet interface and the water vapor delivery pipeline 300 is in a conducting state, the other is in a cut-off state; that is, the water inlet interface and the water vapor delivery pipeline 300 cannot be conducted at the same time, that is: when the water storage tank 100 is lower than the water replenishment storage volume, the water vapor delivery pipeline 300 is controlled to be in a cut-off state and the water inlet interface is conducted; when the pressure in the gas storage tank 200 is lower than the gas replenishment pressure, the water inlet interface is cut off and the water vapor delivery pipeline 300 is conducted. If the water storage tank 100 and the air storage tank 200 are connected at the same time, during the process of replenishing the water storage tank 100, liquid water at room temperature enters the water storage tank 100 to lower the temperature of the water storage tank 100, thereby condensing part of the water vapor in the water storage tank 100 and reducing the water vapor concentration. This will cause the flow of the water vapor in the water storage tank 100 to be unstable when entering the air storage tank 200, thereby causing the flow of the water vapor in the air storage tank 200 to be unstable when entering the process chamber 500. The water inlet interface and the water vapor transport pipeline 300 of the embodiment of the present application are not connected at the same time, which can prevent the water vapor with unstable flow generated when the water storage tank 100 is replenished from entering the air storage tank 200, thereby preventing the water vapor with unstable flow from entering the process chamber 500.

在一種可選的實施例中,進氣系統包括抽吸管路600,步驟S100具體包括:In an optional embodiment, the intake system includes a suction line 600, and step S100 specifically includes:

S110、控制進水接口和水蒸氣輸送管路300處於導通狀態,且抽吸管路600與供氣管路400相連通,也就是說,使抽吸管路600與供氣管路400的位於第二開關閥430上游的管段相連通,通過抽吸管路600抽吸儲水箱100內的氣體,以使液態水通入儲水箱100內;S110, controlling the water inlet interface and the water vapor transport pipeline 300 to be in a conducting state, and the suction pipeline 600 to be connected to the air supply pipeline 400, that is, connecting the suction pipeline 600 to the pipe section of the air supply pipeline 400 located upstream of the second switch valve 430, and sucking the gas in the water storage tank 100 through the suction pipeline 600, so that liquid water flows into the water storage tank 100;

這裡可打開第四開關閥710、第五開關閥310、第一開關閥420、流量控制裝置410和第三開關閥610,從而抽吸儲水箱100內的氣體,進而避免在往儲水箱100內注水的過程中,由於液態水進入儲水箱100而使儲水箱100內的壓力升高,導致儲水箱100內的儲水量達到一定量後無法進水,進而導致儲水量長時間無法滿足的問題。Here, the fourth switch valve 710, the fifth switch valve 310, the first switch valve 420, the flow control device 410 and the third switch valve 610 can be opened to suck the gas in the water storage tank 100, thereby avoiding the problem that during the process of filling water into the water storage tank 100, the pressure in the water storage tank 100 increases due to liquid water entering the water storage tank 100, resulting in the water storage tank 100 being unable to fill with water after the water storage volume reaches a certain amount, thereby causing the water storage volume to be unable to be met for a long time.

S120、檢測儲水箱100內的儲水量;S120, detecting the water storage amount in the water storage tank 100;

儲水箱100內的儲水量可以僅通過流量檢測裝置720獲得,也可以僅通過液位檢測裝置110獲得,還可以同時通過流量檢測裝置720和液位檢測裝置110獲得,從而提升儲水量的檢測精度。The water storage volume in the water storage tank 100 can be obtained only through the flow detection device 720, or only through the liquid level detection device 110, or through both the flow detection device 720 and the liquid level detection device 110, thereby improving the detection accuracy of the water storage volume.

S130、當儲水量達到預設儲水量時,控制進水接口和水蒸氣輸送管路300處於截止狀態,此時可關閉第四開關閥710和第五開關閥310。需要說明的是,若在步驟S130之後不需要進行後文所述的氣箱初始化步驟,則還需要使供氣管路400和抽吸管路600處於截止狀態;若在步驟S130之後需要進行氣箱初始化步驟,則可繼續使抽吸管路600與供氣管路400相連通。S130, when the water storage volume reaches the preset water storage volume, the water inlet interface and the water vapor delivery pipeline 300 are controlled to be in a cut-off state, and the fourth switch valve 710 and the fifth switch valve 310 can be closed at this time. It should be noted that if the air box initialization step described later is not required after step S130, the air supply pipeline 400 and the suction pipeline 600 need to be in a cut-off state; if the air box initialization step is required after step S130, the suction pipeline 600 can continue to be connected to the air supply pipeline 400.

在一種可選的實施例中,步驟S200中,控制水蒸氣輸送管路300處於導通狀態之前還包括氣箱初始化步驟;需要說明的是,這裡的氣箱初始化步驟可位於控制水蒸氣輸送管路300處於導通狀態之前,或者位於將液態水加熱至預設溫度之前。In an optional embodiment, in step S200, an air box initialization step is also included before controlling the water vapor delivery pipeline 300 to be in a conductive state; it should be noted that the air box initialization step here can be located before controlling the water vapor delivery pipeline 300 to be in a conductive state, or before heating the liquid water to a preset temperature.

氣箱初始化步驟包括:The airbox initialization steps include:

S201、控制抽吸管路600與供氣管路400相連通,且水蒸氣輸送管路300處於截止狀態,此時可打開流量控制裝置410、第一開關閥420和第三開關閥610,關閉第五開關閥310;S201, control the suction pipeline 600 to be connected with the air supply pipeline 400, and the water vapor delivery pipeline 300 is in a cut-off state, at which time the flow control device 410, the first switch valve 420 and the third switch valve 610 can be opened, and the fifth switch valve 310 can be closed;

S202、通過抽吸管路600抽吸儲氣箱200內的氣體;如此不僅可降低儲氣箱200內的壓力,使儲水箱100中產生的水蒸氣能夠進入到儲氣箱200中;還可抽吸出儲氣箱200內的空氣,保證水蒸氣的氣體純度。S202, the gas in the air storage box 200 is sucked through the suction pipeline 600; this not only reduces the pressure in the air storage box 200, so that the water vapor generated in the water storage tank 100 can enter the air storage box 200; it can also suck out the air in the air storage box 200 to ensure the gas purity of the water vapor.

S203、當儲氣箱200內的壓力達到第一預設閾值時,控制抽吸管路600和供氣管路400均處於截止狀態。這裡的第一預設閾值可根據實際情況進行選擇。可選地,第一預設閾值為本底壓力,也就是說,對進行儲氣箱200抽吸時,儲氣箱200內的壓力不再變化,此時的壓力為本底壓力,如此可抽吸出更多的儲氣箱200內的空氣,進一步地保證水蒸氣的氣體純度。S203, when the pressure in the air storage box 200 reaches the first preset threshold, the suction pipeline 600 and the air supply pipeline 400 are both in a cut-off state. The first preset threshold here can be selected according to the actual situation. Optionally, the first preset threshold is the background pressure, that is, when the air storage box 200 is suctioned, the pressure in the air storage box 200 no longer changes, and the pressure at this time is the background pressure, so that more air in the air storage box 200 can be sucked out, further ensuring the gas purity of the water vapor.

在一種可選的實施例中,儲水箱100還設有溢流接口,進氣方法還包括:In an optional embodiment, the water storage tank 100 is further provided with an overflow interface, and the air intake method further comprises:

S600、當儲水箱100內的儲水量高於溢流儲水量時,控制溢流接口處於導通狀態。當儲水箱100內的儲水量過高時,液態水會擠佔水蒸氣的空間,進而降低水蒸氣的儲存量。通過溢流接口可排出部分儲水箱100內的水,使儲水量達到預設儲水量,進而避免產生液態水擠佔水蒸氣的空間的問題。S600, when the water storage volume in the water storage tank 100 is higher than the overflow water storage volume, the overflow interface is controlled to be in a conducting state. When the water storage volume in the water storage tank 100 is too high, liquid water will squeeze the space of water vapor, thereby reducing the storage volume of water vapor. Part of the water in the water storage tank 100 can be discharged through the overflow interface, so that the water storage volume reaches the preset water storage volume, thereby avoiding the problem of liquid water squeezing the space of water vapor.

在儲水箱100首次蓄水加熱之前,或者需要檢測進氣系統的密封性時,可對進氣系統進行漏率檢測。在一種可選的實施例中,步驟S100中,向儲水箱100內通入液態水的步驟之前包括漏率檢測步驟,漏率檢測步驟包括:Before the water storage tank 100 is first filled with water and heated, or when the air tightness of the air intake system needs to be tested, a leak rate test can be performed on the air intake system. In an optional embodiment, in step S100, a leak rate test step is included before the step of introducing liquid water into the water storage tank 100. The leak rate test step includes:

S101、控制進水接口處於截止狀態,控制水蒸氣輸送管路300處於導通狀態,且抽吸管路600與供氣管路400相連通,此時可關閉第四開關閥710,打開第五開關閥310、第一開關閥420、流量控制裝置410和第三開關閥610;S101, control the water inlet interface to be in a cut-off state, control the water vapor transport pipeline 300 to be in a conducting state, and connect the suction pipeline 600 to the gas supply pipeline 400. At this time, the fourth switch valve 710 may be closed, and the fifth switch valve 310, the first switch valve 420, the flow control device 410 and the third switch valve 610 may be opened;

S102、通過抽吸管路600抽吸儲水箱100、水蒸氣輸送管路300、儲氣箱200和供氣管路400(具體為位於第三開關閥610上游的管段)內的氣體;S102, sucking gas from the water storage tank 100, the water vapor transport pipeline 300, the gas storage tank 200 and the gas supply pipeline 400 (specifically, the pipe section located upstream of the third switch valve 610) through the suction pipeline 600;

S103、在儲氣箱200的壓力達到第二預設閾值時,控制抽吸管路600處於截止狀態;S103, when the pressure of the air storage tank 200 reaches a second preset threshold, the suction pipeline 600 is controlled to be in a cut-off state;

S104、測量儲氣箱200內的第一壓力,第一壓力記為P11;這裡的第一壓力可等於第二預設閾值,也可不等於第二預設閾值。S104, measuring the first pressure in the air storage box 200, the first pressure is recorded as P11; the first pressure here may be equal to the second preset threshold value, or may not be equal to the second preset threshold value.

S105、間隔預設時長後測量儲水箱100內的第二壓力,預設時長記為t,第二壓力記為P12;S105, measuring the second pressure in the water storage tank 100 after a preset time interval, where the preset time interval is denoted as t and the second pressure is denoted as P12;

S106、根據第一壓力、第二壓力和預設時長獲得進氣系統的漏率。進氣系統漏率LR=(P12-P11)/t。本申請實施例可預先判定進氣系統漏率,當漏率滿足要求時再進行向儲水箱100內注水的步驟。S106, obtaining the leakage rate of the air intake system according to the first pressure, the second pressure and the preset time. The leakage rate of the air intake system LR = (P12-P11)/t. The embodiment of the present application can pre-determine the leakage rate of the air intake system, and when the leakage rate meets the requirement, the step of injecting water into the water storage tank 100 is performed.

在一種可選的實施例中,進氣方法還包括溫度檢測步驟,溫度檢測步驟包括:In an optional embodiment, the air intake method further includes a temperature detection step, and the temperature detection step includes:

S710、檢測儲水箱100的溫度;S710, detecting the temperature of the water storage tank 100;

S720、在溫度低於第一預設溫度的情況下,截止水蒸氣輸送管路300,提高第一加熱裝置260的功率;S720, when the temperature is lower than the first preset temperature, the water vapor delivery pipeline 300 is cut off and the power of the first heating device 260 is increased;

S730、在溫度高於第二預設溫度的情況下,減小第一加熱裝置260的功率,或者關閉第一加熱裝置260。本申請實施例可控制儲水箱100內液態水的溫度保持在第一預設溫度和第二預設溫度之間,從而可產生滿足製程需求的水蒸氣。S730, when the temperature is higher than the second preset temperature, reduce the power of the first heating device 260, or turn off the first heating device 260. The embodiment of the present application can control the temperature of the liquid water in the water storage tank 100 to be maintained between the first preset temperature and the second preset temperature, thereby generating water vapor that meets the process requirements.

本發明上文實施例中重點描述的是各個實施例之間的不同,各個實施例之間不同的優化特徵只要不矛盾,均可以組合形成更優的實施例,考慮到行文簡潔,在此則不再贅述。The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

以上所述僅為本發明的實施例而已,並不用於限制本發明。對於本領域技術人員來說,本發明可以有各種更改和變化。凡在本發明的精神和原理之內所作的任何修改、等同替換、改進等,均應包含在本發明的權利要求範圍之內。The above is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention shall be included in the scope of the claims of the present invention.

100:儲水箱 110:液位檢測裝置 200:儲氣箱 210:第二加熱裝置 220:壓力檢測裝置 230:第二溫度檢測件 240:第一過溫開關 250:和第二過溫開關 260:第一加熱裝置 300:水蒸氣輸送管路 310:第五開關閥 400:供氣管路 410:流量控制裝置 420:第一開關閥 430:第二開關閥 500:製程腔室 600:抽吸管路 610:第三開關閥 620:第一單向閥 700:進水管路 710:第四開關閥 720:流量檢測裝置 730:第九開關閥 800:排水管路 810:第六開關閥 910:混氣管路 911:第七開關閥 920:吹掃管路 921:第八開關閥 922:第二單向閥 930:機台主體 931:處理模組 932:通訊模組 933:類比量輸入模組 934:數位量輸入模組 935:數位量輸出模組 936:溫控模組 937:電源模組 938:機台電源盒 940:電磁閥組100: water storage tank110: liquid level detection device200: air storage tank210: second heating device220: pressure detection device230: second temperature detection element240: first over-temperature switch250: second over-temperature switch260: first heating device300: water vapor transmission pipeline310: fifth switch valve400: air supply pipeline410: flow control device420: first switch valve430: second switch valve500: process chamber600: suction pipeline610: third switch valve620: first check valve700: water inlet pipeline710: fourth switch valve720: Flow detection device730: Ninth switch valve800: Drainage pipeline810: Sixth switch valve910: Mixing pipeline911: Seventh switch valve920: Blowing pipeline921: Eighth switch valve922: Second check valve930: Machine body931: Processing module932: Communication module933: Analog input module934: Digital input module935: Digital output module936: Temperature control module937: Power module938: Machine power box940: Solenoid valve assembly

下面結合附圖,通過對本申請的具體實施方式詳細描述,將使本申請的技術方案及其有益效果顯而易見。 圖1為本申請實施例公開的進氣系統的結構示意圖; 圖2為本申請實施例公開的進氣系統的局部剖視圖; 圖3為本申請實施例公開的一種進氣方法的流程示意圖; 圖4為本申請實施例公開的另一種進氣方法的流程示意圖; 圖5為本申請實施例公開的氣箱初始化步驟的流程示意圖; 圖6為本申請實施例公開的半導體製程設備的結構框圖。The following detailed description of the specific implementation of the present application in conjunction with the attached figures will make the technical solution of the present application and its beneficial effects obvious. Figure 1 is a structural schematic diagram of the intake system disclosed in the embodiment of the present application; Figure 2 is a partial cross-sectional view of the intake system disclosed in the embodiment of the present application; Figure 3 is a flow diagram of an intake method disclosed in the embodiment of the present application; Figure 4 is a flow diagram of another intake method disclosed in the embodiment of the present application; Figure 5 is a flow diagram of the air box initialization step disclosed in the embodiment of the present application; Figure 6 is a structural block diagram of the semiconductor process equipment disclosed in the embodiment of the present application.

100:儲水箱100: Water storage tank

110:液位檢測裝置110: Liquid level detection device

200:儲氣箱200: Gas tank

220:壓力檢測裝置220: Pressure detection device

300:水蒸氣輸送管路300: Water vapor transmission pipeline

310:第五開關閥310: Fifth switch valve

400:供氣管路400: Gas supply pipeline

410:流量控制裝置410: Flow control device

420:第一開關閥420: First switch valve

430:第二開關閥430: Second switch valve

500:製程腔室500: Processing chamber

600:抽吸管路600: Suction pipeline

610:第三開關閥610: The third switch valve

620:第一單向閥620: First check valve

700:進水管路700: Water inlet pipe

710:第四開關閥710: The fourth switch valve

720:流量檢測裝置720: Flow detection device

730:第九開關閥730: The ninth switch valve

800:排水管路800: Drainage pipeline

810:第六開關閥810:Sixth switch valve

910:混氣管路910: Gas mixing pipeline

911:第七開關閥911:Seventh switch valve

920:吹掃管路920: Blow the pipeline

921:第八開關閥921: The eighth switch valve

922:第二單向閥922: Second check valve

Claims (15)

Translated fromChinese
一種半導體製程設備的進氣系統,其中,包括一儲水箱、一儲氣箱、一水蒸氣輸送管路和一供氣管路,該儲水箱具有可通斷的一進水接口,且該儲水箱上設有一第一加熱裝置, 該水蒸氣輸送管路的兩端分別與該儲水箱的出氣口和該儲氣箱的進氣口可通斷地相連通,該儲氣箱的出氣口通過該供氣管路與該半導體製程設備的製程腔室可通斷地連通, 在該進水接口和該水蒸氣輸送管路中的一者處於導通狀態的情況下,另一者處於截止狀態。An air intake system for semiconductor process equipment includes a water storage tank, an air storage tank, a water vapor transport pipeline and an air supply pipeline. The water storage tank has a water inlet interface that can be switched on and off, and a first heating device is provided on the water storage tank. The two ends of the water vapor transport pipeline are respectively connected to the air outlet of the water storage tank and the air inlet of the air storage tank in a switchable manner. The air outlet of the air storage tank is connected to the process chamber of the semiconductor process equipment in a switchable manner through the air supply pipeline. When one of the water inlet interface and the water vapor transport pipeline is in a conducting state, the other is in a cutoff state.如請求項1所述的進氣系統,其中,該供氣管路上設有一流量控制裝置、一第一開關閥和一第二開關閥,該流量控制裝置位於該第一開關閥的下游,該第二開關閥位於該流量控制裝置的下游。An intake system as described in claim 1, wherein a flow control device, a first switch valve and a second switch valve are provided on the air supply pipeline, the flow control device is located downstream of the first switch valve, and the second switch valve is located downstream of the flow control device.如請求項2所述的進氣系統,其中,該進氣系統還包括一抽吸管路,該抽吸管路的第一端與該供氣管路可通斷地相連通,該抽吸管路的第一端位於該流量控制裝置和該第二開關閥之間。An intake system as described in claim 2, wherein the intake system further includes a suction pipeline, a first end of which is connected to the air supply pipeline in a switchable manner, and the first end of the suction pipeline is located between the flow control device and the second switch valve.如請求項2所述的進氣系統,其中,該進氣系統還包括一混氣管路,該混氣管路的第一端與該供氣管路可通斷地相連通,且該混氣管路的第一端位於該第二開關閥的下游。An intake system as described in claim 2, wherein the intake system further includes an air mixing pipeline, a first end of which is intermittently connected to the air supply pipeline, and the first end of the air mixing pipeline is located downstream of the second switch valve.如請求項1所述的進氣系統,其中,該進氣系統還包括一進水管路,該進水管路與該進水接口可通斷地相連通,該進水管路上設有一流量檢測裝置,該儲水箱設有液位檢測裝置,該流量檢測裝置和該液位檢測裝置均用於獲取該儲水箱內的儲水量。An air intake system as described in claim 1, wherein the air intake system further includes a water inlet pipeline, the water inlet pipeline is intermittently connected to the water inlet interface, a flow detection device is provided on the water inlet pipeline, and the water storage tank is provided with a liquid level detection device, and the flow detection device and the liquid level detection device are both used to obtain the water storage volume in the water storage tank.如請求項1所述的進氣系統,其中,該第一加熱裝置包裹該儲水箱,該進氣系統還包括一第二加熱裝置,該第二加熱裝置包裹該水蒸氣輸送管路、該儲氣箱和該供氣管路, 該第二加熱裝置的加熱溫度大於或等於該第一加熱裝置的加熱溫度。The air intake system as described in claim 1, wherein the first heating device wraps the water storage tank, and the air intake system further includes a second heating device, the second heating device wraps the water vapor transmission pipeline, the air storage tank and the air supply pipeline, and the heating temperature of the second heating device is greater than or equal to the heating temperature of the first heating device.如請求項6所述的進氣系統,其中,該進氣系統還包括一第一溫度檢測件、一第二溫度檢測件、一第一過溫開關和一第二過溫開關,該第一溫度檢測件和該第一過溫開關均設置于該儲水箱,該第二溫度檢測件和該第二過溫開關均設置于該儲氣箱。An intake system as described in claim 6, wherein the intake system further includes a first temperature detection component, a second temperature detection component, a first over-temperature switch and a second over-temperature switch, the first temperature detection component and the first over-temperature switch are both disposed in the water storage tank, and the second temperature detection component and the second over-temperature switch are both disposed in the air storage tank.一種半導體製程設備,其中,包括該製程腔室和如請求項1至7中任一項所述的進氣系統,該進氣系統與該製程腔室可通斷地連通。A semiconductor process equipment, comprising a process chamber and an air intake system as described in any one of claims 1 to 7, wherein the air intake system is intermittently connected to the process chamber.如請求項8所述的半導體製程設備,其中,該半導體製程設備還包括一機台主體、一處理模組、一通訊模組、一類比量輸入模組、一數位量輸入模組、一數位量輸出模組和一溫控模組, 該處理模組通過該通訊模組與該機台主體電連接,該處理模組分別與該類比量輸入模組、該數位量輸入模組、該數位量輸出模組電連接,該溫控模組與該第一加熱裝置電連接。The semiconductor process equipment as described in claim 8, wherein the semiconductor process equipment further comprises a machine body, a processing module, a communication module, an analog input module, a digital input module, a digital output module and a temperature control module, The processing module is electrically connected to the machine body through the communication module, the processing module is electrically connected to the analog input module, the digital input module and the digital output module respectively, and the temperature control module is electrically connected to the first heating device.一種進氣方法,應用於如請求項1至7中任一項所述的進氣系統,其中,包括: 向該儲水箱內通入液態水,直至該儲水箱內的儲水量達到預設儲水量; 將該液態水加熱至預設溫度,控制該水蒸氣輸送管路處於導通狀態,且該進水接口處於截止狀態; 當該儲氣箱內的壓力達到預設壓力時,控制該供氣管路處於導通狀態,且該水蒸氣輸送管路處於截止狀態; 當該儲水箱內的儲水量低於補水儲水量時,控制該水蒸氣輸送管路處於截止狀態,且該進水接口處於導通狀態; 當該儲氣箱內的壓力低於補氣壓力時,控制該進水接口處於截止狀態,且該水蒸氣輸送管路處於導通狀態。An air intake method, applied to an air intake system as described in any one of claims 1 to 7, comprising: Introducing liquid water into the water storage tank until the water storage volume in the water storage tank reaches a preset water storage volume; Heating the liquid water to a preset temperature, controlling the water vapor transmission pipeline to be in a conducting state, and the water inlet interface to be in a cut-off state; When the pressure in the air storage tank reaches the preset pressure, controlling the air supply pipeline to be in a conducting state, and the water vapor transmission pipeline to be in a cut-off state; When the water storage volume in the water storage tank is lower than the water replenishment storage volume, controlling the water vapor transmission pipeline to be in a cut-off state, and the water inlet interface to be in a conducting state; When the pressure in the air storage tank is lower than the air supply pressure, the water inlet interface is controlled to be in a cut-off state, and the water vapor transmission pipeline is in a conducting state.如請求項10所述的進氣方法,其中,該進氣系統包括一抽吸管路, 該向該儲水箱內通入液態水,直至該儲水箱內的儲水量達到預設儲水量的步驟具體包括: 控制該進水接口和該水蒸氣輸送管路處於導通狀態,且該抽吸管路與該供氣管路相連通,通過該抽吸管路抽吸該儲水箱內的氣體,以使液態水通入該儲水箱內; 檢測該儲水箱內的儲水量; 當該儲水量達到預設儲水量時,控制該進水接口和該水蒸氣輸送管路處於截止狀態。In the air intake method as described in claim 10, the air intake system includes a suction pipeline, and the step of introducing liquid water into the water storage tank until the water storage volume in the water storage tank reaches a preset water storage volume specifically includes: controlling the water inlet interface and the water vapor transport pipeline to be in a conducting state, and the suction pipeline is connected to the air supply pipeline, and the gas in the water storage tank is sucked through the suction pipeline to allow liquid water to enter the water storage tank; detecting the water storage volume in the water storage tank; when the water storage volume reaches the preset water storage volume, controlling the water inlet interface and the water vapor transport pipeline to be in a cut-off state.如請求項10所述的進氣方法,其中,該進氣系統包括一抽吸管路, 該控制該水蒸氣輸送管路處於導通狀態之前還包括一氣箱初始化步驟; 該氣箱初始化步驟包括: 控制該抽吸管路與該供氣管路相連通,且該水蒸氣輸送管路處於截止狀態; 通過該抽吸管路抽吸該儲氣箱內的氣體; 當該儲氣箱內的壓力達到第一預設閾值時,控制該抽吸管路和該供氣管路均處於截止狀態。The air intake method as described in claim 10, wherein the air intake system includes a suction pipeline, and before controlling the water vapor delivery pipeline to be in a conducting state, an air box initialization step is also included; the air box initialization step includes: controlling the suction pipeline to be connected to the air supply pipeline, and the water vapor delivery pipeline is in a cut-off state; sucking the gas in the air storage box through the suction pipeline; when the pressure in the air storage box reaches a first preset threshold, controlling the suction pipeline and the air supply pipeline to be in a cut-off state.如請求項10所述的進氣方法,其中,該儲水箱還設有一溢流接口,該進氣方法還包括: 當該儲水箱內的儲水量高於溢流儲水量時,控制該溢流接口處於導通狀態。As described in claim 10, the water storage tank is also provided with an overflow interface, and the air intake method further comprises:When the water storage volume in the water storage tank is higher than the overflow water storage volume, the overflow interface is controlled to be in a conducting state.如請求項10所述的進氣方法,其中,該進氣系統包括一抽吸管路, 該向該儲水箱內通入液態水的步驟之前包括一漏率檢測步驟,該漏率檢測步驟包括: 控制該進水接口處於截止狀態,控制該水蒸氣輸送管路處於導通狀態,且該抽吸管路與該供氣管路相連通; 通過該抽吸管路抽吸該儲水箱、該水蒸氣輸送管路、該儲氣箱和該供氣管路內的氣體; 在該儲氣箱的壓力達到第二預設閾值時,控制該抽吸管路處於截止狀態; 測量該儲氣箱內的第一壓力; 間隔預設時長後測量該儲水箱內的第二壓力; 根據該第一壓力、該第二壓力和該預設時長獲得該進氣系統的漏率。The air intake method as described in claim 10, wherein the air intake system includes a suction pipeline, The step of introducing liquid water into the water storage tank includes a leak rate detection step before, and the leak rate detection step includes: Controlling the water inlet interface to be in a cut-off state, controlling the water vapor transport pipeline to be in a conducting state, and connecting the suction pipeline to the air supply pipeline; Sucking the gas in the water storage tank, the water vapor transport pipeline, the air storage tank and the air supply pipeline through the suction pipeline; When the pressure of the air storage tank reaches a second preset threshold, controlling the suction pipeline to be in a cut-off state; Measuring the first pressure in the air storage tank; Measuring the second pressure in the water storage tank after a preset time interval; The leakage rate of the intake system is obtained according to the first pressure, the second pressure and the preset time.如請求項10所述的進氣方法,其中,該進氣方法還包括一溫度檢測步驟,該溫度檢測步驟包括: 檢測該儲水箱的溫度; 在該溫度低於第一預設溫度的情況下,截止該水蒸氣輸送管路,提高該第一加熱裝置的功率; 在該溫度高於第二預設溫度的情況下,減小該第一加熱裝置的功率,或者關閉該第一加熱裝置。The air intake method as described in claim 10, wherein the air intake method further includes a temperature detection step, the temperature detection step including: Detecting the temperature of the water storage tank; When the temperature is lower than a first preset temperature, cutting off the water vapor transport pipeline and increasing the power of the first heating device; When the temperature is higher than a second preset temperature, reducing the power of the first heating device or shutting down the first heating device.
TW112145002A2022-11-212023-11-21Air inlet system for semiconductor process equipment, semiconductor process equipment and air inlet methodTWI852839B (en)

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
CN20221145579602022-11-21
CN202211455796.0ACN118057588A (en)2022-11-212022-11-21Air inlet system of semiconductor process equipment, semiconductor process equipment and air inlet method

Publications (2)

Publication NumberPublication Date
TW202421829A TW202421829A (en)2024-06-01
TWI852839Btrue TWI852839B (en)2024-08-11

Family

ID=91069044

Family Applications (1)

Application NumberTitlePriority DateFiling Date
TW112145002ATWI852839B (en)2022-11-212023-11-21Air inlet system for semiconductor process equipment, semiconductor process equipment and air inlet method

Country Status (4)

CountryLink
CN (1)CN118057588A (en)
DE (1)DE112023004867T5 (en)
TW (1)TWI852839B (en)
WO (1)WO2024109717A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN119920675B (en)*2025-04-072025-07-08上海邦芯半导体科技有限公司 Gas Intake Systems for Plasma Processing Equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO1992006488A1 (en)*1990-10-051992-04-16Fujitsu LimitedVapor supplier and its control method
US20060144338A1 (en)*2004-12-302006-07-06Msp CorporatonHigh accuracy vapor generation and delivery for thin film deposition
CN101942640A (en)*2009-07-072011-01-12三星移动显示器株式会社Be used for the jar of deposition apparatus and deposition apparatus and the method for utilizing this jar
US20160243461A1 (en)*2015-02-232016-08-25SCREEN Holdings Co., Ltd.Vapor supplying apparatus, vapor drying apparatus, vapor supplying method, and vapor drying method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5966499A (en)*1997-07-281999-10-12Mks Instruments, Inc.System for delivering a substantially constant vapor flow to a chemical process reactor
TW350594U (en)*1997-08-211999-01-11United Semiconductor CorpImprovement of steam transmission train
CN101077823A (en)*2007-02-142007-11-28中国建材国际工程有限公司Gasifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO1992006488A1 (en)*1990-10-051992-04-16Fujitsu LimitedVapor supplier and its control method
US20060144338A1 (en)*2004-12-302006-07-06Msp CorporatonHigh accuracy vapor generation and delivery for thin film deposition
CN101942640A (en)*2009-07-072011-01-12三星移动显示器株式会社Be used for the jar of deposition apparatus and deposition apparatus and the method for utilizing this jar
US20160243461A1 (en)*2015-02-232016-08-25SCREEN Holdings Co., Ltd.Vapor supplying apparatus, vapor drying apparatus, vapor supplying method, and vapor drying method

Also Published As

Publication numberPublication date
WO2024109717A1 (en)2024-05-30
DE112023004867T5 (en)2025-09-11
TW202421829A (en)2024-06-01
CN118057588A (en)2024-05-21

Similar Documents

PublicationPublication DateTitle
TWI852839B (en)Air inlet system for semiconductor process equipment, semiconductor process equipment and air inlet method
KR100745372B1 (en) Gas flow amount monitoring device and method for semiconductor manufacturing equipment
KR20250002553A (en) Semiconductor heat treatment device and control method thereof
CN110528085A (en)A kind of control device and method of voltage input bottle pressure
CN115738775A (en)Gas mixing device and method and semiconductor process system
CN117080116A (en)Semiconductor process equipment and exhaust system thereof
CN111599718A (en)Backpressure gas circuit device, reaction chamber base backpressure control method and reaction chamber
KR20250141816A (en) Tail gas exhaust device and semiconductor heat treatment device
JP2010190453A (en)Gas liquid filling device
CN112795902B (en)Semiconductor processing equipment
CN112210831A (en)Diffusion furnace for manufacturing photovoltaic cell
CN114636107B (en)Pipeline conveying mechanism and control method thereof
CN221720920U (en) A source replenishment system for thin film deposition equipment
WO2023207877A1 (en)Vaporization system and semiconductor process device
CN212024086U (en) A gas delivery structure of a dry vacuum pump
CN209561441U (en) A phosphorus source supply system suitable for tubular diffusion process
CN221852904U (en) A heatable liquid storage tank device for a vacuum coating machine
CN218666280U (en)Reaction cavity device with built-in solid source
CN114293246A (en) Water cooling and flow distribution device for silicon epitaxy equipment
CN217685589U (en)High-precision humidifying equipment with double groove bodies and flow control valves
CN220579368U (en)Water vapor supply device and coating system
CN220926927U (en)Air intake system of MAD (magnetic energy storage) equipment
CN111370302A (en) A system and method for increasing the service life of a low pressure diffusion furnace source bottle pressure gauge
CN221763311U (en) A pipeline structure for improving temperature control stability
CN109950360A (en) A Phosphorus Source Supply System Applicable to Tubular Diffusion Process

[8]ページ先頭

©2009-2025 Movatter.jp