本發明涉及一種靜電卡盤單元及具備所述靜電卡盤單元的電漿蝕刻裝置，其中，所包含的聚焦環不是一體型式，而是由第一聚焦環構件和第二聚焦環構件構成，因此，在發生損壞時，僅需要更換被損壞部分，從而可以降低維護費用。The present invention relates to an electrostatic chuck unit and a plasma etching device having the electrostatic chuck unit, wherein the focusing ring included therein is not an integrated type, but is composed of a first focusing ring component and a second focusing ring component. Therefore, when damage occurs, only the damaged part needs to be replaced, thereby reducing maintenance costs.
半導體製造有多種製程，其中包括利用電漿蝕刻設備蝕刻基板（即晶片）的電漿蝕刻（etching）製程。電漿蝕刻製程是利用電漿去除晶片的薄膜的製程。There are many processes in semiconductor manufacturing, including plasma etching, which uses plasma etching equipment to etch substrates (i.e. wafers). Plasma etching is a process that uses plasma to remove thin films from wafers.
上述的蝕刻製程是向在執行製程的密封腔室的內部空間內以預定間隔隔開設置的上部電極和下部電極施加高頻功率來形成電場，並通過電場激活供應到腔室的內部空間的反應氣體來形成電漿狀態之後，用電漿狀態的離子蝕刻放在靜電卡盤上的晶片。The etching process is to apply high frequency power to the upper electrode and the lower electrode separated by a predetermined interval in the inner space of the sealed chamber where the process is performed to form an electric field, and after the reactive gas supplied to the inner space of the chamber is activated by the electric field to form a plasma state, the wafer placed on the electrostatic chuck is etched with ions in the plasma state.
電漿刻蝕設備需要刻蝕均勻度（Etch Uniformity）控制技術，以確保均勻地蝕刻晶片的內側及外側。Plasma etching equipment requires etch uniformity control technology to ensure uniform etching of the inner and outer sides of the wafer.
此處，電漿必須均勻地形成在晶片的整個上表面，這是通過圍繞位於下部電極上部的靜電卡盤主體邊緣的聚焦環來實現。Here, the plasma must be formed uniformly over the entire upper surface of the wafer, which is achieved by a focusing ring around the edge of the electrostatic chuck body located above the lower electrode.
聚焦環通過施加高頻功率，將形成在靜電卡盤主體上部的電場形成區域擴大到晶片所在區域之外，從而，將晶片放置在電漿形成區域的中心，可以整體進行蝕刻。The focusing ring applies high-frequency power to expand the electric field formation area formed on the upper part of the electrostatic chuck main body to outside the area where the wafer is located. As a result, the wafer can be placed in the center of the plasma formation area and etched as a whole.
如此，聚焦環在固定晶片的同時將電漿聚集在準確的位置，以保持均勻的電漿密度，而且，還可以防止晶片側面的污染，並產生絕緣功能。In this way, the focusing ring can fix the chip and focus the plasma at a precise position to maintain uniform plasma density. It can also prevent contamination of the chip side and produce an insulating function.
然而，根據與晶片一起安裝的聚焦環的材料、區域的寬度，將對蝕刻均勻度導致影響，並在中心/邊緣之間產生厚度偏差。However, depending on the material of the focus ring mounted together with the wafer, the width of the area will affect the etching uniformity and produce thickness deviation between the center/edge.
因此，以往試圖通過安裝由陶瓷材料製成的聚焦環來提高蝕刻均勻度，但是，在蝕刻時，難以精密地減小中心/邊緣的蝕刻速率（E/R，Etch Rate）的標準偏差來判斷製程再現性。Therefore, attempts have been made to improve etching uniformity by installing a focusing ring made of ceramic material. However, it is difficult to precisely reduce the standard deviation of the center/edge etching rate (E/R) during etching to determine process reproducibility.
因此，需要開發一種具有新結構的電漿蝕刻裝置，其通過減小蝕刻時中心/邊緣的蝕刻速率的標準偏差，來提高蝕刻均勻度的再現性。Therefore, it is necessary to develop a plasma etching device with a new structure, which can improve the reproducibility of etching uniformity by reducing the standard deviation of the center/edge etching rate during etching.
作為相關習知技術，有韓國專利公開第10-2011-0080811號(發明名稱：靜電卡盤單元及具備所述靜電卡盤單元的基板處理裝置)等。As related known technologies, there is Korean Patent Publication No. 10-2011-0080811 (Invention Title: Electrostatic Chuck Unit and Substrate Processing Apparatus Equipped with the Electrostatic Chuck Unit) and the like.
《技術問題》Technical Issues
本發明提供一種靜電卡盤單元及具備所述靜電卡盤單元的電漿蝕刻裝置，其中，所包含的聚焦環不是一體型式，而是由第一聚焦環構件和第二聚焦環構件構成，因此，在發生損壞時，僅需要更換被損壞部分，從而可以降低維護費用，而且，通過根據第一聚焦環構件和第二聚焦環構件的垂直截面的水平長度的比率來減小中心及邊緣之間的蝕刻速率的標準偏差，從而可以再現優異的蝕刻均勻度。The present invention provides an electrostatic chuck unit and a plasma etching device having the electrostatic chuck unit, wherein the included focusing ring is not an integrated type, but is composed of a first focusing ring component and a second focusing ring component. Therefore, when damage occurs, only the damaged part needs to be replaced, thereby reducing maintenance costs. In addition, the standard deviation of the etching rate between the center and the edge is reduced according to the ratio of the horizontal length of the vertical section of the first focusing ring component and the second focusing ring component, thereby reproducing excellent etching uniformity.
本發明所要解決的問題並不限於以上所提及的問題，本領域的普通技術人員可以從以下的記載清楚地理解未提及的其他問題。 《解決問題的手段》The problems to be solved by the present invention are not limited to the problems mentioned above. Ordinary technical personnel in this field can clearly understand other problems not mentioned from the following description.《Means for solving the problem》
根據本發明實施例的靜電卡盤單元，其設置在電漿蝕刻裝置，其中，可以包括：靜電卡盤，在上面支撐晶片；以及聚焦環，以圍繞所述靜電卡盤的中心部分的方式佈置在所述靜電卡盤的上部，並將用於蝕刻所述晶片的反應氣體聚焦到所述晶片上，所述聚焦環可以包括：第一聚焦環構件，圍繞所述靜電卡盤的中心部分；以及第二聚焦環構件，圍繞所述第一聚焦環構件。According to the electrostatic chuck unit of the embodiment of the present invention, it is arranged in the plasma etching device, which may include: an electrostatic chuck, supporting a chip on it; and a focusing ring, which is arranged on the upper part of the electrostatic chuck in a manner surrounding the central part of the electrostatic chuck and focusing the reaction gas used to etch the chip onto the chip. The focusing ring may include: a first focusing ring component surrounding the central part of the electrostatic chuck; and a second focusing ring component surrounding the first focusing ring component.
根據一態樣，在所述第一聚焦環構件的內側面上端部可以具備台階部分來固定所述晶片。According to one aspect, a step portion may be provided at an upper end of an inner side surface of the first focusing ring member to fix the chip.
根據一態樣，所述第一聚焦環構件的外側面可以形成下端部向外側延伸的延伸部分，並具有呈「└」形的垂直截面，所述第二聚焦環構件的內側面可以形成上端部向內側延伸的延伸部分，並具有呈「┐」形的垂直截面，所述第二聚焦環構件可通過所述第一聚焦環構件的所述延伸部分和所述第二聚焦環構件的所述延伸部分匹配地結合到所述第一聚焦環構件。According to one embodiment, the outer side surface of the first focusing ring component can form an extension portion extending outward from the lower end and having a vertical cross-section in the shape of "└", the inner side surface of the second focusing ring component can form an extension portion extending inward from the upper end and having a vertical cross-section in the shape of "┐", and the second focusing ring component can be matchedly coupled to the first focusing ring component through the extension portion of the first focusing ring component and the extension portion of the second focusing ring component.
根據一態樣，在所述第一聚焦環構件的外側面具備向外側突出的突起，在所述第二聚焦環構件的內側面具備供所述突起插入的插入槽，從而，可以防止所述第二聚焦環構件相對於所述第一聚焦環構件的旋轉。According to one embodiment, a protrusion protruding outward is provided on the outer surface of the first focusing ring component, and an insertion groove for inserting the protrusion is provided on the inner surface of the second focusing ring component, thereby preventing the second focusing ring component from rotating relative to the first focusing ring component.
根據一態樣，所述聚焦環還可以包括第三聚焦環構件，所述第三聚焦環構件圍繞所述第二聚焦環構件的外側面和所述靜電卡盤的外側面。According to one aspect, the focusing ring may further include a third focusing ring component, wherein the third focusing ring component surrounds an outer side surface of the second focusing ring component and an outer side surface of the electrostatic chuck.
根據一態樣，所述第二聚焦環構件的外側面可以形成下端部向外側延伸的延伸部分，並具有呈“└”形的垂直截面，在所述第三聚焦環構件的內側面可以具備供所述第二聚焦環構件的所述延伸部分插入的插入槽。According to one embodiment, the outer side surface of the second focusing ring component can form an extension portion extending outward from the lower end and having a vertical cross-section in the shape of "└", and the inner side surface of the third focusing ring component can have an insertion groove for inserting the extension portion of the second focusing ring component.
根據一態樣，所述第一聚焦環構件可由石英材料或矽系列材料製成，所述第二聚焦環構件可由陶瓷材料或氧化鋁製成。According to one aspect, the first focusing ring component can be made of quartz material or silicon series material, and the second focusing ring component can be made of ceramic material or alumina.
根據一側面，所述第一聚焦環構件相對於所述第二聚焦環構件的垂直截面的水平長度的比率可以為1:1以下。According to one aspect, a ratio of a horizontal length of the first focusing ring component to a vertical cross-section of the second focusing ring component may be less than 1:1.
另外，根據本發明實施例的電漿蝕刻裝置，其中，可以包括：腔室，形成用於執行電漿蝕刻製程的製程空間；靜電卡盤單元，設置在所述腔室中，所述靜電卡盤單元包括：靜電卡盤，在上面支撐晶片；以及聚焦環，以圍繞所述靜電卡盤的中心部分的方式佈置在所述靜電卡盤的上部，並將用於蝕刻所述晶片的反應氣體聚焦到所述晶片上，所述聚焦環包括：第一聚焦環構件，圍繞所述靜電卡盤的中心部分；以及第二聚焦環構件，圍繞所述第一聚焦環構件。 《發明效果》In addition, according to the plasma etching device of the embodiment of the present invention, it may include: a chamber, forming a process space for performing a plasma etching process; an electrostatic chuck unit, arranged in the chamber, the electrostatic chuck unit includes: an electrostatic chuck, supporting a wafer on it; and a focusing ring, arranged on the upper part of the electrostatic chuck in a manner surrounding the central part of the electrostatic chuck, and focusing the reaction gas used to etch the wafer onto the wafer, the focusing ring includes: a first focusing ring component, surrounding the central part of the electrostatic chuck; and a second focusing ring component, surrounding the first focusing ring component.《Effects of the invention》
根據本發明的實施例，由於聚焦環不是一體型式，而是由第一聚焦環構件和第二聚焦環構件構成，因此，在發生損壞時，僅需要更換被損壞部分，從而，可以降低維護費用，而且，通過根據第一聚焦環構件和第二聚焦環構件的垂直截面的水平長度的比率來減小中心及邊緣之間的蝕刻速率的標準偏差，從而可以再現優異的蝕刻均勻度。According to the embodiment of the present invention, since the focusing ring is not an integrated type but is composed of a first focusing ring component and a second focusing ring component, when damage occurs, only the damaged portion needs to be replaced, thereby reducing maintenance costs. In addition, by reducing the standard deviation of the etching rate between the center and the edge according to the ratio of the horizontal lengths of the vertical cross-sections of the first focusing ring component and the second focusing ring component, excellent etching uniformity can be reproduced.
本發明的優點及/或特徵以及實現它們的方法通過結合附圖詳細說明的實施例將清楚地理解。然而，本發明不限於以下所記載的實施例，而可以體現為其他各種不同的形式，但是，本實施例用於完整地揭露本發明，並向本領域的普通技術人員提供本發明的完整的範圍，並且，本發明僅由申請專利範圍定義。在整篇說明書中，相同的元件符號代表相同的元件。The advantages and/or features of the present invention and the methods for achieving them will be clearly understood by the embodiments described in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments described below, but can be embodied in various other forms. However, the embodiments are used to fully disclose the present invention and provide the full scope of the present invention to ordinary technicians in this field, and the present invention is defined only by the scope of the patent application. In the entire specification, the same component symbols represent the same components.
以下，將參照附圖詳細說明本發明的實施例。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖1是示意性地顯示在根據本發明一實施例的電漿蝕刻裝置中靜電卡盤單元的結構的示意圖；以及圖2是用以顯示圖1的靜電卡盤單元的截面的剖面立體圖。FIG. 1 is a schematic diagram schematically showing the structure of an electrostatic chuck unit in a plasma etching device according to an embodiment of the present invention; and FIG. 2 is a sectional perspective view showing a cross section of the electrostatic chuck unit of FIG. 1 .
本發明並未圖示根據一實施例的電漿蝕刻裝置的整體結構，但粗略地說明其結構的話，本實施例的電漿蝕刻裝置可以包括：腔室，形成用於蝕刻製程的空間；靜電卡盤單元100，用於支撐晶片W；電漿生成部，用於生成電漿；以及氣體供應部，用於供應反應氣體。The present invention does not illustrate the overall structure of the plasma etching device according to an embodiment, but if its structure is roughly described, the plasma etching device of this embodiment may include: a chamber, forming a space for an etching process; an electrostatic chuck unit 100, used to support a chip W; a plasma generating part, used to generate plasma; and a gas supply part, used to supply a reaction gas.
通過上述的結構，可以對晶片W進行電漿蝕刻製程。Through the above structure, the wafer W can be subjected to a plasma etching process.
如圖1及圖2所示，根據本發明一實施例的靜電卡盤單元100可以包括：靜電卡盤110，用以在上面支撐晶片W；以及聚焦環120，以圍繞靜電卡盤110的中心部分115的方式佈置在靜電卡盤110的上部，並將用於蝕刻晶片W的反應氣體聚焦到晶片W上。As shown in FIGS. 1 and 2 , an electrostatic chuck unit 100 according to an embodiment of the present invention may include: an electrostatic chuck 110 for supporting a wafer W thereon; and a focusing ring 120 disposed on an upper portion of the electrostatic chuck 110 in a manner surrounding a central portion 115 of the electrostatic chuck 110 and focusing a reaction gas for etching the wafer W onto the wafer W.
此處，本實施例的聚焦環120（如後述）不是形成為一個整體，而是由多個可以相互匹配結合的構件製成，因此，不僅可以保護靜電卡盤110，而且在發生損壞時僅更換損壞的聚焦環120即可，因此，可以比以往節儉維修費用。Here, the focusing ring 120 of this embodiment (as described later) is not formed as a whole, but is made of multiple components that can be matched and combined with each other. Therefore, it can not only protect the electrostatic chuck 110, but also when damage occurs, only the damaged focusing ring 120 needs to be replaced, thereby saving maintenance costs compared with the past.
以下對每個結構進行說明，首先，如圖1及圖2所示，本實施例的靜電卡盤110用於支撐作為電漿蝕刻對象的晶片W，整體上具有圓板形狀，可根據晶片W的尺寸具有中心部分115突出的台階形狀。Each structure is described below. First, as shown in Figures 1 and 2, the electrostatic chuck 110 of this embodiment is used to support a chip W that is an object of plasma etching. It has a circular plate shape as a whole and may have a stepped shape with a protruding center portion 115 according to the size of the chip W.
例如，晶片W的尺寸有4英寸、6英寸、8英寸、12英寸等多種，例如對12英寸的晶片W進行刻蝕製程時，可以設置具備符合12英寸晶片W的中心部分115的靜電卡盤110，並且，可以應用具備這種靜電卡盤110的電漿蝕刻裝置。For example, the sizes of the chip W are 4 inches, 6 inches, 8 inches, 12 inches, etc. When an etching process is performed on a 12-inch chip W, an electrostatic chuck 110 having a center portion 115 that conforms to the 12-inch chip W can be provided, and a plasma etching device having such an electrostatic chuck 110 can be used.
所述靜電卡盤110的基體部分可以由鋁製成，中心部分115可以由陶瓷製成，尤其，主體部分111可以為硬質陽極氧化（hard anodizing）鋁。The base portion of the electrostatic chuck 110 may be made of aluminum, and the central portion 115 may be made of ceramic. In particular, the main body portion 111 may be hard anodized aluminum.
因此，可以保護靜電卡盤110本身。換而言之，當對晶片W進行蝕刻製程時，可能會發生短路或者電漿電濺射，但是，這可以通過由上述材料製造靜電卡盤110來防止。Therefore, the electrostatic chuck 110 itself can be protected. In other words, when the etching process is performed on the wafer W, short circuit or plasma sputtering may occur, but this can be prevented by manufacturing the electrostatic chuck 110 from the above-mentioned material.
另外，通過圍繞靜電卡盤110的聚焦環120，不僅可以正確地執行蝕刻製程，而且還可以保護靜電卡盤110。In addition, by surrounding the electrostatic chuck 110 with the focusing ring 120 , not only the etching process can be performed correctly, but also the electrostatic chuck 110 can be protected.
如上所述，本實施例的聚焦環120不是形成為一個整體，而是可以通過將由不同材料製成的多個環構件130、140、150相互匹配結合而完成。As described above, the focusing ring 120 of this embodiment is not formed as a whole, but can be completed by matching and combining a plurality of ring components 130, 140, 150 made of different materials.
如圖2所示，所述聚焦環120可以包括：第一聚焦環構件130，其圍繞靜電卡盤110的中心部分115；以及第二聚焦環構件140，其圍繞第一聚焦環構件130。雖然第一聚焦環構件和第二聚焦環構件相互分離，但具有相互匹配的形狀，因此，很容易進行結合和分離，但在結合時保持堅固。2, the focus ring 120 may include a first focus ring member 130 surrounding the central portion 115 of the electrostatic chuck 110, and a second focus ring member 140 surrounding the first focus ring member 130. Although the first focus ring member and the second focus ring member are separated from each other, they have shapes that match each other, and therefore, are easily coupled and separated, but remain firm when coupled.
首先，如圖1及圖2所示，本實施例的第一聚焦環構件130可以設置為圍繞支撐晶片W的靜電卡盤110的中心部115的環形。在上端部具備台階部分130a，可通過台階部分130a固定晶片W的外緣。換而言之，晶片W的台階部分130a的上表面和靜電卡盤110的上表面形成同一表面，從而可以牢固地支撐和固定晶片W。First, as shown in FIG. 1 and FIG. 2 , the first focusing ring member 130 of the present embodiment may be provided in a ring shape surrounding the center portion 115 of the electrostatic chuck 110 supporting the wafer W. A step portion 130a is provided at the upper end portion, and the outer edge of the wafer W may be fixed by the step portion 130a. In other words, the upper surface of the step portion 130a of the wafer W and the upper surface of the electrostatic chuck 110 form the same surface, so that the wafer W may be firmly supported and fixed.
然而，當台階部分130a具有邊角時會損傷晶片W的外緣，因此，可以對台階部分130a的內彎曲部分進行圓形（rounding）處理。However, when the step portion 130 a has a corner, the outer edge of the wafer W may be damaged, and thus, the inner curved portion of the step portion 130 a may be rounded.
如圖2所示，所述第一聚焦環構件130的外側部可以具有下端部比上端部向外側更長的延伸部130b，而具有整體呈「└」形的垂直截面。As shown in FIG. 2 , the outer side of the first focusing ring member 130 may have an extension portion 130 b whose lower end is longer outward than the upper end, and has a vertical cross section that is generally in the shape of “└”.
並且，為了與第一聚焦環構件130的外側部形狀相對應，第二聚焦環構件140的內側面可以具有上端部比下端部向內側形成為更長的延伸部140a，而具有「┐」形的垂直截面。換而言之，通過第一聚焦環構件130的外側部和第二聚焦環構件140的外側部具有相互反轉的形狀，從而第一聚焦環構件130和第二聚焦環構件140可以相互匹配結合。Furthermore, in order to correspond to the shape of the outer side of the first focusing ring component 130, the inner side of the second focusing ring component 140 may have an upper end portion extending inwardly longer than the lower end portion, and may have a vertical cross section in the shape of "┐". In other words, the outer side of the first focusing ring component 130 and the outer side of the second focusing ring component 140 have mutually inverted shapes, so that the first focusing ring component 130 and the second focusing ring component 140 can be matched and combined with each other.
首先，在佈置第一聚焦環構件130之後，在其上面佈置第二聚焦環構件140，然後往下移動，從而可以使第二聚焦環構件140簡單且準確地結合至第一聚焦環構件130。First, after the first focus ring member 130 is arranged, the second focus ring member 140 is arranged thereon and then moved downward, so that the second focus ring member 140 can be simply and accurately combined with the first focus ring member 130.
然而，需要對第一聚焦環構件130準確地對準第二聚焦環構件140的位置的同時防止旋轉，為此，如圖2所示，本實施例的聚焦環120具有對準及防旋轉結構。However, it is necessary to accurately align the first focus ring member 130 with the second focus ring member 140 while preventing the first focus ring member 130 from rotating. Therefore, as shown in FIG. 2 , the focus ring 120 of the present embodiment has an alignment and anti-rotation structure.
參照圖2，在第一聚焦環構件130的外側面可以具備向外突出的突起135，在第二聚焦環構件140的內側面可以具備供突起135插入的插入槽145。通過所述結構，對第一聚焦環構件130結合第二聚焦環構件140時，可以對這些執行對準，並可以防止第二聚焦環構件140相對於第一聚焦環構件130的旋轉。2, a protrusion 135 protruding outward may be provided on the outer side surface of the first focus ring component 130, and an insertion groove 145 for inserting the protrusion 135 may be provided on the inner side surface of the second focus ring component 140. Through the above structure, when the first focus ring component 130 is combined with the second focus ring component 140, these can be aligned, and the second focus ring component 140 can be prevented from rotating relative to the first focus ring component 130.
如此，本實施例的聚焦環120不是一體型式，而是由第一聚焦環構件130及第二聚焦環構件140構成，因此，當發生損壞時，僅需更換損壞的部分，所以可以降低維護費用。另外，由於材料特性，不僅可以良好地保護靜電卡盤110，而且可以提高製程條件。Thus, the focus ring 120 of the present embodiment is not an integrated type, but is composed of the first focus ring component 130 and the second focus ring component 140. Therefore, when damage occurs, only the damaged part needs to be replaced, so the maintenance cost can be reduced. In addition, due to the material properties, not only can the electrostatic chuck 110 be well protected, but also the process conditions can be improved.
另外，如上所述，第一聚焦環構件130和第二聚焦環構件140可以由不同的材料製成。In addition, as described above, the first focusing ring member 130 and the second focusing ring member 140 may be made of different materials.
例如，第一聚焦環構件130可以由性質與晶片W相似的石英材料製成。然而，其不限於此，例如，可以由矽或碳化矽等的矽系列材料製成。For example, the first focusing ring member 130 may be made of a quartz material having properties similar to those of the wafer W. However, it is not limited thereto, and for example, may be made of a silicon-based material such as silicon or silicon carbide.
因此，通過第一聚焦環構件130例如由絕緣性材料的石英製成，因此可以保護靜電卡盤110。尤其，通過覆蓋靜電卡盤110中由鋁製成的主體部分111，從而可以進一步改善製程條件。Therefore, by making the first focusing ring member 130 of, for example, quartz, an insulating material, the electrostatic chuck 110 can be protected. In particular, by covering the main body 111 of the electrostatic chuck 110 made of aluminum, the process conditions can be further improved.
本實施例的第二聚焦環構件140可以由陶瓷材料製成。然而，本發明不限於此，第二聚焦環構件140可以由氧化鋁等而製成。The second focusing ring member 140 of the present embodiment may be made of a ceramic material. However, the present invention is not limited thereto, and the second focusing ring member 140 may be made of alumina or the like.
另外，如圖2所示，本實施例的聚焦環120除了包括第一聚焦環構件130和第二聚焦環構件140之外，還可以包括圍繞第二聚焦環構件140的外側面和靜電卡盤110的外側面的第三聚焦環構件150。In addition, as shown in FIG. 2 , the focus ring 120 of the present embodiment may include, in addition to the first focus ring component 130 and the second focus ring component 140 , a third focus ring component 150 surrounding the outer side surface of the second focus ring component 140 and the outer side surface of the electrostatic chuck 110 .
參照圖2，第二聚焦環構件140的外側面形成下端部向外延伸的延伸部分140b，具有大致呈「└」形的垂直截面，與此相對應地，在第三聚焦環構件150的內側面可以具備供第二聚焦環構件140的延伸部分140b插入的插入槽150a。2 , the outer side surface of the second focusing ring component 140 forms an extension portion 140b extending outward from the lower end portion, having a vertical cross-section that is roughly in the shape of “└”. Correspondingly, the inner side surface of the third focusing ring component 150 may have an insertion groove 150a for inserting the extension portion 140b of the second focusing ring component 140.
通過這種結合結構，第三聚焦環構件150不僅可以牢固地保持第二聚焦環構件140的位置，還可以牢固地保持結合在其中的第一聚焦環構件130的位置，從而，可以在靜電卡盤110上可靠地進行對晶片W的電漿蝕刻製程。Through this combination structure, the third focusing ring component 150 can not only firmly maintain the position of the second focusing ring component 140, but also firmly maintain the position of the first focusing ring component 130 combined therein, so that the plasma etching process of the chip W can be reliably performed on the electrostatic chuck 110.
另外，根據上述第一聚焦環構件130的垂直截面的水平長度B（參照圖2)和第二聚焦環構件140的垂直截面的水平長度A（參照圖2)的比率，減小中心與邊緣之間的蝕刻速率的標準偏差，從而可以再現優異的蝕刻均勻度。對此將參考附圖進行說明。In addition, according to the ratio of the horizontal length B of the vertical cross section of the first focusing ring member 130 (see FIG. 2 ) and the horizontal length A of the vertical cross section of the second focusing ring member 140 (see FIG. 2 ), the standard deviation of the etching rate between the center and the edge is reduced, so that excellent etching uniformity can be reproduced. This will be described with reference to the attached drawings.
圖3是顯示在根據本發明一實施例之具備靜電卡盤單元的電漿蝕刻裝置中依據各種聚焦環的實驗結果。FIG. 3 shows experimental results based on various focusing rings in a plasma etching apparatus equipped with an electrostatic chuck unit according to an embodiment of the present invention.
如圖所示，當聚焦環均採用石英材料時，晶片W的中心底部的電路線寬（CD，Critical Dimension）為1.23mm，邊緣（晶片外緣5mm處的邊緣）底部處的電路線寬為1.15mm。As shown in the figure, when the focusing ring is made of quartz material, the circuit width (CD, Critical Dimension) at the center bottom of the chip W is 1.23mm, and the circuit width at the edge (the edge 5mm from the outer edge of the chip) is 1.15mm.
然而，本實施例的聚焦環120具備由石英製成的第一聚焦環構件130和由陶瓷製成的第二聚焦環構件140，並且第一聚焦環構件130的直徑為170mm的聚焦環120時，中心底部的電路線寬(CD，Critical Dimension)為1.30mm，邊緣底部的電路線寬為1.27mm。However, the focusing ring 120 of the present embodiment has a first focusing ring component 130 made of quartz and a second focusing ring component 140 made of ceramic, and when the diameter of the first focusing ring component 130 is 170 mm, the circuit width (CD, Critical Dimension) at the center bottom is 1.30 mm, and the circuit width at the edge bottom is 1.27 mm.
另外，圖3顯示由石英製成的第一聚焦環構件的直徑為190mm、210mm的情況，可知當第一聚焦環構件130的直徑為170mm時，中心與邊緣之間的電路線寬的偏差最小，即蝕刻速率的偏差最小，因此可以再現優異的蝕刻均勻度。In addition, FIG. 3 shows the cases where the diameter of the first focusing ring component made of quartz is 190 mm and 210 mm. It can be seen that when the diameter of the first focusing ring component 130 is 170 mm, the deviation of the circuit width between the center and the edge is the smallest, that is, the deviation of the etching rate is the smallest, so excellent etching uniformity can be reproduced.
另外，圖4是顯示在根據本發明一實施例之具備靜電卡盤單元的電漿蝕刻裝置中依據聚焦環的第一聚焦環構件和第二聚焦環構件的比率的實驗結果。4 shows experimental results of the ratio of the first focusing ring component to the second focusing ring component of the focusing ring in the plasma etching apparatus having an electrostatic chuck unit according to an embodiment of the present invention.
參照圖4，顯示了總共四個情況，包括聚焦環全部由石英製成的情況、第一聚焦環構件130相對於第二聚焦環構件140的垂直截面的水平長度的比率為1:2的情況和1:1.5的情況、本實施例是1:1以下的情況。4 , there are four cases in total, including the case where the focusing ring is entirely made of quartz, the case where the ratio of the horizontal length of the vertical section of the first focusing ring component 130 to the second focusing ring component 140 is 1:2 and 1:1.5, and the case where the ratio is less than 1:1 in this embodiment.
其中，當第一聚焦環構件130的垂直截面的水平長度B相對於第二聚焦環構件140的垂直截面的水平長度A（參照圖2）的比率為1:1以下時，中心底部處的電路線寬（CD，Critical Dimension）為1.30mm，邊緣（晶片外緣5mm處的邊緣）底部處的電路線寬為1.27mm。即可知電路線寬度的標準偏差最小，並且可以再現優異的蝕刻均勻度。When the ratio of the horizontal length B of the vertical cross section of the first focusing ring member 130 to the horizontal length A of the vertical cross section of the second focusing ring member 140 (refer to FIG. 2 ) is 1:1 or less, the circuit width (CD, Critical Dimension) at the center bottom is 1.30 mm, and the circuit width at the edge (the edge at 5 mm from the outer edge of the chip) bottom is 1.27 mm. It can be seen that the standard deviation of the circuit width is the smallest, and excellent etching uniformity can be reproduced.
如此，根據本實施例，由於聚焦環120不是一體型式，而是由第一聚焦環構件130和第二聚焦環構件140製成，因此，當發生損壞時，僅需要更換損壞的部分，所以，可以降低維護成本。Thus, according to the present embodiment, since the focus ring 120 is not an integrated type, but is made of the first focus ring component 130 and the second focus ring component 140, when damage occurs, only the damaged part needs to be replaced, so the maintenance cost can be reduced.
另外，通過根據第一聚焦環構件130和第二聚焦環構件140的垂直截面的水平長度的比率來減小中心和邊緣之間的蝕刻速率的標準偏差，從而可以再現優異的蝕刻均勻度。In addition, by reducing the standard deviation of the etching rate between the center and the edge according to the ratio of the horizontal lengths of the vertical cross sections of the first focusing ring member 130 and the second focusing ring member 140, excellent etching uniformity can be reproduced.
以上，說明了根據本發明的具體實施例，當然，在不脫離本發明的範圍的情況下可以進行各種變化。因此，本發明的範圍不應限於所說明的實施例，而是應由申請專利範圍及與本案申請專利範圍的均等物來確定。The above describes the specific embodiments of the present invention. Of course, various changes can be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the scope of the patent application and the equivalents of the scope of the patent application in this case.
如上所述，儘管結合有限的實施例和附圖說明了本發明，但是本發明不限於上述實施例，本領域的普通技術人員可以根據所述記載進行各種修改及變化。因此，本發明的精神應僅通過申請專利範圍來理解，並且其所有均等或等效變化都應落入本發明的精神的範圍內。As described above, although the present invention is described in conjunction with limited embodiments and drawings, the present invention is not limited to the above embodiments, and a person skilled in the art can make various modifications and changes based on the description. Therefore, the spirit of the present invention should only be understood through the scope of the patent application, and all equal or equivalent changes should fall within the scope of the spirit of the present invention.
100:靜電卡盤單元100: Electrostatic chuck unit
110:靜電卡盤110: Electrostatic chuck
111:主體部分111: Main body
115:中心部分115: Center
120:聚焦環120: Focus ring
130:第一聚焦環構件(環構件)130: first focusing ring component (ring component)
130a:台階部分130a: Stairs
130b:延伸部130b: Extension
135:突起135: protrusion
140:第二聚焦環構件(環構件)140: second focusing ring member (ring member)
140a:延伸部140a: Extension
140b:延伸部分140b: Extension
145:插入槽145: Insertion slot
150:第三聚焦環構件(環構件)150: third focusing ring component (ring component)
150a:插入槽150a: Insertion slot
A:第二聚焦環構件的垂直截面的水平長度A: horizontal length of the vertical section of the second focusing ring member
B:第一聚焦環構件的垂直截面的水平長度B: horizontal length of the vertical section of the first focusing ring member
W:晶片W:Whip
圖1是概略地顯示在根據本發明一實施例的電漿蝕刻處理裝置中靜電卡盤單元的結構的示意圖； 圖2是用以顯示圖1的靜電卡盤單元的剖切截面的立體圖； 圖3是顯示在根據本發明一實施例之具備靜電卡盤單元的電漿蝕刻裝置中依據各種聚焦環的實驗結果；以及 圖4是顯示在根據本發明一實施例之具備靜電卡盤單元的電漿蝕刻裝置中依據聚焦環的第一聚焦環構件和第二聚焦環構件的比率的實驗結果。FIG. 1 is a schematic diagram schematically showing the structure of an electrostatic chuck unit in a plasma etching processing device according to an embodiment of the present invention;FIG. 2 is a three-dimensional diagram showing a cut-away section of the electrostatic chuck unit of FIG. 1;FIG. 3 is an experimental result showing various focusing rings in a plasma etching device having an electrostatic chuck unit according to an embodiment of the present invention; andFIG. 4 is an experimental result showing the ratio of the first focusing ring component and the second focusing ring component of the focusing ring in a plasma etching device having an electrostatic chuck unit according to an embodiment of the present invention.
100:靜電卡盤單元100: Electrostatic chuck unit
110:靜電卡盤110: Electrostatic chuck
111:主體部分111: Main body
115:中心部分115: Center part
120:聚焦環120: Focus ring
130:第一聚焦環構件(環構件)130: First focusing ring component (ring component)
130a:台階部分130a: Stairs section
130b:延伸部130b: Extension
135:突起135: protrusion
140:第二聚焦環構件(環構件)140: Second focusing ring component (ring component)
140a:延伸部140a: Extension
140b:延伸部分140b: Extension
145:插入槽145: Insert slot
150:第三聚焦環構件(環構件)150: Third focusing ring component (ring component)
150a:插入槽150a: Insertion slot
A:第二聚焦環構件的垂直截面的水平長度A: Horizontal length of the vertical section of the second focusing ring component
B:第一聚焦環構件的垂直截面的水平長度B: Horizontal length of the vertical section of the first focusing ring component
W:晶片W: chip
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220189808AKR102562892B1 (en) | 2022-12-29 | 2022-12-29 | Electrostatic chuck unit and plasma etching apparatus having the same |
| KR10-2022-0189808 | 2022-12-29 |
| Publication Number | Publication Date |
|---|---|
| TWI845434Btrue TWI845434B (en) | 2024-06-11 |
| TW202427542A TW202427542A (en) | 2024-07-01 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112139987ATWI845434B (en) | 2022-12-29 | 2023-10-19 | Electrostatic chuck unit and plasma etching apparatus having the same |
| Country | Link |
|---|---|
| KR (1) | KR102562892B1 (en) |
| CN (1) | CN117393412B (en) |
| TW (1) | TWI845434B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120050544A (en)* | 2010-11-11 | 2012-05-21 | 주식회사 비츠로시스 | System for controlling remotely many device using image photographing apparatus |
| US20190355557A1 (en)* | 2018-05-15 | 2019-11-21 | Tokyo Electron Limited | Method for driving member and processing apparatus |
| TW202309968A (en)* | 2021-08-30 | 2023-03-01 | 台灣積體電路製造股份有限公司 | Plasma etching method |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08339895A (en)* | 1995-06-12 | 1996-12-24 | Tokyo Electron Ltd | Plasma processing device |
| JP2003257935A (en)* | 2002-03-05 | 2003-09-12 | Tokyo Electron Ltd | Plasma treatment apparatus |
| US20040241995A1 (en)* | 2003-03-27 | 2004-12-02 | Matsushita Electric Industrial Co., Ltd. | Etching apparatus and etching method |
| KR20070008980A (en)* | 2005-07-14 | 2007-01-18 | 삼성전자주식회사 | Chuck Assembly of Semiconductor Etching Equipment and Semiconductor Etching Equipment |
| KR20070016312A (en)* | 2005-08-03 | 2007-02-08 | 삼성전자주식회사 | Process Chamber of Rapid Heat Treatment Apparatus |
| JP4783094B2 (en)* | 2005-09-02 | 2011-09-28 | 東京エレクトロン株式会社 | Annular parts for plasma processing, plasma processing apparatus, and outer annular member |
| CN101989544B (en)* | 2009-08-07 | 2012-05-23 | 中微半导体设备(上海)有限公司 | Structure capable of reducing substrate back polymer |
| JP5690596B2 (en)* | 2011-01-07 | 2015-03-25 | 東京エレクトロン株式会社 | Focus ring and substrate processing apparatus having the focus ring |
| JP5893516B2 (en)* | 2012-06-22 | 2016-03-23 | 東京エレクトロン株式会社 | Processing apparatus for processing object and mounting table for processing object |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120050544A (en)* | 2010-11-11 | 2012-05-21 | 주식회사 비츠로시스 | System for controlling remotely many device using image photographing apparatus |
| US20190355557A1 (en)* | 2018-05-15 | 2019-11-21 | Tokyo Electron Limited | Method for driving member and processing apparatus |
| TW202309968A (en)* | 2021-08-30 | 2023-03-01 | 台灣積體電路製造股份有限公司 | Plasma etching method |
| Publication number | Publication date |
|---|---|
| CN117393412B (en) | 2024-09-24 |
| TW202427542A (en) | 2024-07-01 |
| CN117393412A (en) | 2024-01-12 |
| KR102562892B1 (en) | 2023-08-03 |
| Publication | Publication Date | Title |
|---|---|---|
| JP6450763B2 (en) | Method and apparatus for plasma dicing a semiconductor wafer | |
| JP6320505B2 (en) | Method and apparatus for plasma dicing a semiconductor wafer | |
| KR101008863B1 (en) | Plasma Apparatus With Device For Reducing Polymer Deposition On Substrate And Method For Reducing Polymer Deposition | |
| TWI736592B (en) | Process kit and plasma chamber comprising the same | |
| US7678225B2 (en) | Focus ring for semiconductor treatment and plasma treatment device | |
| US9202721B2 (en) | Method and apparatus for plasma dicing a semi-conductor wafer | |
| US20050105243A1 (en) | Electrostatic chuck for supporting a substrate | |
| JP4878109B2 (en) | Substrate transfer system and substrate transfer method | |
| KR101565174B1 (en) | Substrate processing method | |
| US20080083703A1 (en) | Method of plasma processing | |
| CN109037096A (en) | The method of electrostatic chuck, plasma processing apparatus and manufacturing semiconductor devices | |
| JP2019197899A (en) | Method and apparatus for plasma-dicing semiconductor wafer | |
| CN105190862B (en) | Method and apparatus for carrying out plasma slice to semiconductor crystal wafer | |
| JP3393118B2 (en) | Plasma etching apparatus and method of manufacturing semiconductor device | |
| TWI845434B (en) | Electrostatic chuck unit and plasma etching apparatus having the same | |
| JP4843731B2 (en) | Vacuum processing equipment | |
| US6165276A (en) | Apparatus for preventing plasma etching of a wafer clamp in semiconductor fabrication processes | |
| JP2007234940A (en) | Wafer processing equipment | |
| JP3881290B2 (en) | Plasma processing equipment | |
| JP4622890B2 (en) | Wafer processing equipment | |
| TWI869012B (en) | Plasma processing apparatus and method | |
| US12444580B2 (en) | Plasma processing apparatus and method | |
| US20230343647A1 (en) | Method and apparatus for plasma dicing a semi-conductor wafer | |
| KR20060134675A (en) | Dry etching equipment | |
| JPH08148477A (en) | Semiconductor etching device |