本發明係關於半導體製程系統及半導體製程方法，特別是關於先對晶圓片及基板加壓後，再使晶圓片及基板升溫並持續加壓之半導體製程方法。The present invention relates to a semiconductor manufacturing system and a semiconductor manufacturing method, and in particular to a semiconductor manufacturing method that first pressurizes a wafer and a substrate, then heats up the wafer and the substrate and continues to pressurize the wafer and the substrate.
關於三五族化合物半導體，業界進行長晶時，需選用適合的基板上長出所需的薄膜，以符合其產品的應用性（例如：LED發光元件、高功率元件、氣體偵測元件及不可見光檢知元件等）。針對紅光或紅外光波段LED，目前業界慣用的載板為砷化鎵（GaAs）基板，於其上成長晶圓片之後成為晶圓片，再於其上鍍上金屬，與另一矽（Si）晶圓片。此外，陶瓷基板（AlN）或藍寶石（Al2O3）等基板，於其上亦鍍上另一金屬，經熱壓接合製程後，用藥液去除砷化鎵基板後，以進行後續製程，可製成垂直式和水平式的LED。Regarding III-V compound semiconductors, when the industry is growing crystals, it is necessary to choose a suitable substrate to grow the required thin film to meet the application of its products (for example: LED light-emitting components, high-power components, gas detection components and non-metallic components). Visible light detection components, etc.). For red or infrared band LEDs, the commonly used carrier board in the industry is a gallium arsenide (GaAs) substrate. After growing a wafer on it, it becomes a wafer, which is then plated with metal and combined with another silicon (GaAs) substrate. Si) wafer. In addition, substrates such as ceramic substrates (AlN) or sapphire (Al2 O3 ) are also plated with another metal. After the hot-pressure bonding process, the gallium arsenide substrate is removed with a chemical solution for subsequent processes. Made into vertical and horizontal LEDs.
熱壓接合製程若是以先升溫熔合晶圓片上的金屬與基板上的金屬後，再施加壓力壓平晶圓片，再以藥液去除載板後，晶圓片會出現破洞及連續性的裂痕，甚至是出現晶圓片上材料剝離或脫落的情況發生。If the thermocompression bonding process first heats up the metal on the wafer to fuse the metal on the substrate, then applies pressure to flatten the wafer, and then removes the carrier with a chemical solution, the wafer will have holes and continuity. Cracks, or even material peeling or falling off the wafer may occur.
有鑑於此，本發明提出可控制晶圓片良率，避免晶圓片破洞及材料剝離脫落或產生連續性裂痕的方法。In view of this, the present invention proposes a method that can control the wafer yield and avoid wafer holes, material peeling off or continuous cracks.
本發明之目的在於提供一種半導體製程機制，其透過先加壓再升溫的順序，將晶圓片先壓平後再升溫，使晶圓片上的金屬層及基板上的金屬層在熔合形成合金狀態後，晶圓片及基板之接合面不會因為後續外加的壓力而造成連續性裂痕或破洞的情況。The object of the present invention is to provide a semiconductor manufacturing process mechanism that flattens the wafer first and then raises the temperature through the sequence of first applying pressure and then raising the temperature, so that the metal layer on the wafer and the metal layer on the substrate are fused to form an alloy state. Finally, the joint surface of the wafer and the substrate will not cause continuous cracks or holes due to subsequent external pressure.
為達上述目的，本發明揭露一種半導體製程方法，適用於一半導體製程系統。該半導體製程系統包含一熱壓接合模組、一下石墨製具、一下石墨墊片、一晶圓片、一上石墨製具、上石墨墊片以及一基板。該熱壓接合模組包含一腔體、一上加熱裝置以及一下加熱裝置。該上加熱裝置及該下加熱裝置設置於該腔體中，該半導體製程方法之步驟包含：將該下石墨墊片設置於該下石墨製具；將該晶圓片設置於該下石墨墊片上，該晶圓片鍍有一第一金屬層；將一基板與該晶圓片對位，並進行一預接合製程，該基板鍍有一第二金屬層；於該基板上蓋上該上石墨墊片；於該上石墨墊片上蓋上該上石墨製具，以完成該預接合製程；透過該上加熱裝置及該下加熱裝置夾持該預接合製程狀態下之該下石墨製具、該下石墨墊片、該晶圓片、該第一金屬層、該基板、該第二金屬層、該上石墨墊片及該上石墨製具；對該上石墨製具、該上石墨墊片、該晶圓片、該第一金屬層、該下石墨製具、該下石墨墊片、該基板及該第二金屬層加壓，以使該第一金屬層及該第二金屬層平坦；以及對該晶圓片、該第一金屬層、該基板及該第二金屬層加溫並持續加壓，以接合該第一金屬層及該第二金屬層。In order to achieve the above object, the present invention discloses a semiconductor manufacturing method, which is suitable for a semiconductor manufacturing system. The semiconductor manufacturing system includes a thermocompression bonding module, a lower graphite tool, a lower graphite gasket, a wafer, an upper graphite tool, an upper graphite gasket and a substrate. The thermocompression bonding module includes a cavity, an upper heating device and a lower heating device. The upper heating device and the lower heating device are disposed in the cavity. The steps of the semiconductor manufacturing method include: disposing the lower graphite gasket on the lower graphite tool; disposing the wafer on the lower graphite gasket. on the wafer, the wafer is coated with a first metal layer; a substrate is aligned with the wafer, and a pre-bonding process is performed, the substrate is coated with a second metal layer; the upper graphite gasket is covered on the substrate ; Cover the upper graphite tool on the upper graphite gasket to complete the pre-joining process; clamp the lower graphite tool and the lower graphite in the pre-joining process state through the upper heating device and the lower heating device The gasket, the wafer, the first metal layer, the substrate, the second metal layer, the upper graphite gasket and the upper graphite tool; the upper graphite tool, the upper graphite gasket, and the crystal The wafer, the first metal layer, the lower graphite tool, the lower graphite gasket, the substrate and the second metal layer are pressed to make the first metal layer and the second metal layer flat; and The wafer, the first metal layer, the substrate and the second metal layer are heated and continuously pressurized to join the first metal layer and the second metal layer.
於一實施例中，半導體製程方法更包含：透過該下加熱裝置加熱該下石墨製具、該下石墨墊片、該晶圓片晶圓片及該第一金屬層，以使該第一金屬層升溫；透過該上加熱裝置加熱該上石墨製具、該上石墨墊片、該基板及該第二金屬層，以使該第二金屬層升溫；以及接合該第一金屬層及該第二金屬層，使該第一金屬層及該第二金屬層形成一合金層。In one embodiment, the semiconductor manufacturing method further includes: heating the lower graphite tool, the lower graphite gasket, the wafer wafer and the first metal layer through the lower heating device, so that the first metal layer heating the upper graphite tool, the upper graphite gasket, the substrate and the second metal layer through the upper heating device to heat the second metal layer; and joining the first metal layer and the second metal layer The metal layer makes the first metal layer and the second metal layer form an alloy layer.
於一實施例中，該熱壓接合模組包含一加壓氣缸及一加壓機構。該半導體製程方法之步驟更包含：透過該加壓氣缸帶動該加壓機構，對該上石墨製具、該上石墨墊片、該晶圓片、該第一金屬層、該下石墨製具、該下石墨墊片、該基板及該第二金屬層加壓。In one embodiment, the thermocompression bonding module includes a pressurizing cylinder and a pressurizing mechanism. The steps of the semiconductor manufacturing method further include: driving the pressurizing mechanism through the pressurized cylinder to move the upper graphite tool, the upper graphite gasket, the wafer, the first metal layer, the lower graphite tool, The lower graphite gasket, the substrate and the second metal layer are pressurized.
於一實施例中，該熱壓接合模組更包含一幫浦。該半導體製程方法之步驟更包含：透過該幫浦對該腔體抽氣，使該腔體形成一真空狀態；以及於該真空狀態下接合該第一金屬層及該第二金屬層。In one embodiment, the thermocompression bonding module further includes a pump. The steps of the semiconductor manufacturing method further include: pumping the cavity through the pump to form a vacuum state in the cavity; and joining the first metal layer and the second metal layer in the vacuum state.
於一實施例中，該熱壓接合模組更包含一排風通道。該半導體製程方法之步驟更包含：透過一氮氣冷卻該腔體；以及透過該排風通道排出該腔體中之該氮氣。In one embodiment, the thermocompression bonding module further includes an air exhaust channel. The steps of the semiconductor manufacturing method further include: cooling the cavity through nitrogen gas; and discharging the nitrogen gas in the cavity through the exhaust channel.
於一實施例中，該晶圓片由一磊晶層及一載板構成，該磊晶層成長於該載板。該半導體製程方法之步驟更包含：移除該載板；以及根據該磊晶層之一狀態判斷該磊晶層之一良率。In one embodiment, the wafer is composed of an epitaxial layer and a carrier, and the epitaxial layer is grown on the carrier. The steps of the semiconductor manufacturing method further include: removing the carrier; and determining the yield of the epitaxial layer according to the state of the epitaxial layer.
於一實施例中，半導體製程方法中之該基板係一矽晶基板、一陶瓷基板及一藍寶石基板其中之一。In one embodiment, the substrate in the semiconductor manufacturing method is one of a silicon substrate, a ceramic substrate, and a sapphire substrate.
於一實施例中，半導體製程方法中之該第一金屬層係由金、鉑、鈀、鈦、錫、銦及鉻至少其中之一所製成。In one embodiment, the first metal layer in the semiconductor manufacturing method is made of at least one of gold, platinum, palladium, titanium, tin, indium and chromium.
於一實施例中，半導體製程方法中之該第二金屬層係由金、鉑、鈀、鈦、錫、銦及鉻至少其中之一所製成。In one embodiment, the second metal layer in the semiconductor manufacturing method is made of at least one of gold, platinum, palladium, titanium, tin, indium and chromium.
於一實施例中，半導體製程方法中之該晶圓片之一材料係一磷化鋁鎵銦、一砷化鋁鎵、一砷化鎵、一磷砷化鎵及一磷化銦其中之一。In one embodiment, a material of the wafer in the semiconductor manufacturing method is one of aluminum gallium indium phosphide, aluminum gallium arsenide, gallium arsenide, gallium arsenide phosphide, and indium phosphide .
此外，本發明更揭露一種半導體製程系統，其包含一下石墨製具、一下石墨墊片、一晶圓片、一基板、一上石墨墊片、一上石墨製具以及一熱壓接合模組。該下石墨墊片設置於該下石墨製具。該晶圓片設置於該下石墨墊片。該晶圓片鍍有一第一金屬層。該基板與該晶圓片對位，以進行一預接合製程。該基板鍍有一第二金屬層。該上石墨墊片覆蓋於該基板上。該上石墨製具覆蓋於該上石墨墊片上，以完成該預接合製程。該熱壓接合模組包含一腔體、一上加熱裝置以及一下加熱裝置。該上加熱裝置設置於該腔體中。該下加熱裝置設置於該腔體中，與該上加熱裝置共同夾持該預接合製程狀態下之該下石墨製具、該下石墨墊片、該晶圓片、該第一金屬層、該基板、該第二金屬層、該上石墨墊片及該上石墨製具。該熱壓接合模組對該上石墨製具、該上石墨墊片、該晶圓片、該第一金屬層、該下石墨製具、該下石墨墊片、該基板及該第二金屬層加壓，以使該第一金屬層及該第二金屬層平坦。該熱壓接合模組對該晶圓片、該第一金屬層、該基板及該第二金屬層加溫並持續加壓，以接合該第一金屬層及該第二金屬層。In addition, the present invention further discloses a semiconductor manufacturing system, which includes a lower graphite tool, a lower graphite gasket, a wafer, a substrate, an upper graphite gasket, an upper graphite tool and a thermocompression bonding module. The lower graphite gasket is arranged on the lower graphite tool. The wafer is placed on the lower graphite gasket. The wafer is coated with a first metal layer. The substrate and the wafer are aligned to perform a pre-bonding process. The substrate is coated with a second metal layer. The upper graphite gasket covers the substrate. The upper graphite tool is covered on the upper graphite gasket to complete the pre-joining process. The thermocompression bonding module includes a cavity, an upper heating device and a lower heating device. The upper heating device is arranged in the cavity. The lower heating device is disposed in the cavity, and together with the upper heating device clamps the lower graphite tool, the lower graphite gasket, the wafer, the first metal layer, and the The substrate, the second metal layer, the upper graphite gasket and the upper graphite tool. The thermocompression bonding module combines the upper graphite tool, the upper graphite gasket, the wafer, the first metal layer, the lower graphite tool, the lower graphite gasket, the substrate and the second metal layer Pressure is applied to make the first metal layer and the second metal layer flat. The thermocompression bonding module heats and continuously pressurizes the wafer, the first metal layer, the substrate and the second metal layer to join the first metal layer and the second metal layer.
在參閱圖式及隨後描述之實施方式後，此技術領域具有通常知識者便可瞭解本發明之其他目的，以及本發明之技術手段及實施態樣。After referring to the drawings and the subsequently described embodiments, those with ordinary knowledge in this technical field can understand other objects of the present invention, as well as the technical means and implementation aspects of the present invention.
以下將透過實施例來解釋本發明內容，本發明的實施例並非用以限制本發明須在如實施例所述之任何特定的環境、應用或特殊方式方能實施。因此，關於實施例之說明僅為闡釋本發明之目的，而非用以限制本發明。需說明者，以下實施例及圖式中，與本發明非直接相關之元件已省略而未繪示，且圖式中各元件間之尺寸關係僅為求容易瞭解，並非用以限制實際比例。The present invention will be explained below through examples. The embodiments of the present invention are not intended to limit the invention to be implemented in any specific environment, application or special manner as described in the embodiments. Therefore, the description of the embodiments is only for the purpose of illustrating the present invention and is not intended to limit the present invention. It should be noted that in the following embodiments and drawings, components not directly related to the present invention have been omitted and not shown, and the dimensional relationships between components in the drawings are only for easy understanding and are not used to limit the actual proportions.
請參考圖1至圖5。圖1為本發明半導體製程系統1000之示意圖。圖2為本發明預接合製程之示意圖。半導體製程系統1000包含一下石墨製具100、一下石墨墊片200、一晶圓片300、一基板400、一上石墨墊片500、一上石墨製具600以及一熱壓接合模組700。Please refer to Figure 1 to Figure 5. FIG. 1 is a schematic diagram of a semiconductor manufacturing system 1000 of the present invention. Figure 2 is a schematic diagram of the pre-bonding process of the present invention. The semiconductor manufacturing system 1000 includes a lower graphite tool 100 , a lower graphite gasket 200 , a wafer 300 , a substrate 400 , an upper graphite gasket 500 , an upper graphite tool 600 and a thermocompression bonding module 700 .
晶圓片300之材料為一磷化鋁鎵銦、一砷化鋁鎵、一砷化鎵、一磷砷化鎵及一磷化銦其中之一，但不限於此，且晶圓片300鍍有一第一金屬層310。第一金屬層310的材質為金、鉑、鈀、鈦、錫、銦及鉻至少其中之一，但不限於此。The material of the wafer 300 is one of aluminum gallium indium phosphide, aluminum gallium arsenide, gallium arsenide, gallium arsenide phosphide and indium phosphide, but is not limited thereto, and the wafer 300 is plated. There is a first metal layer 310. The material of the first metal layer 310 is at least one of gold, platinum, palladium, titanium, tin, indium and chromium, but is not limited thereto.
基板400可為一矽晶基板、一陶瓷基板（AlN）及一藍寶石基板（Al2O3）其中之一，但不限於此，且基板400鍍有一第二金屬層410。第二金屬層410的材質為金、鉑、鈀、鈦、錫、銦及鉻至少其中之一，但不限於此。The substrate 400 can be one of a silicon substrate, a ceramic substrate (AlN), and a sapphire substrate (Al2O3), but is not limited thereto, and the substrate 400 is coated with a second metal layer 410. The material of the second metal layer 410 is at least one of gold, platinum, palladium, titanium, tin, indium and chromium, but is not limited thereto.
熱壓接合模組700包含一腔體710、一上加熱裝置720、一下加熱裝置730、一加壓氣缸740、一加壓機構750、一幫浦760及一排風通道770。上加熱裝置720與下加熱裝置730皆設置於腔體710中。於進行熱壓接合前，熱壓接合模組700需準備前置作業。詳言之，熱壓接合過程係於腔體710為真空狀態下操作。幫浦760可抽出腔體190內的氣體直至腔體190的真空值達到所需的真空值，例如，真空值約為10-2托（Torr），但不於此，並在真空狀態下接合第一金屬層310及第二金屬層410。The thermocompression bonding module 700 includes a cavity 710 , an upper heating device 720 , a lower heating device 730 , a pressurizing cylinder 740 , a pressurizing mechanism 750 , a pump 760 and an exhaust channel 770 . The upper heating device 720 and the lower heating device 730 are both disposed in the cavity 710 . Before performing thermocompression bonding, the thermocompression bonding module 700 needs to prepare preparatory operations. Specifically, the thermocompression bonding process is performed when the cavity 710 is in a vacuum state. The pump 760 can pump out the gas in the cavity 190 until the vacuum value of the cavity 190 reaches a required vacuum value, for example, the vacuum value is about 10-2 Torr (Torr), but not less than this, and engages in a vacuum state The first metal layer 310 and the second metal layer 410.
類似地，所需接合的物件集合800與下石墨製具100、下石墨墊片200、上石墨墊片500以及上石墨製具600在進行熱壓接合前，亦需進行一預接合製程。詳言之，所需接合的物件集合800包含晶圓片300、第一金屬層310、基板400、第二金屬層410。放置順序為先將下石墨墊片200設置於下石墨製具100上，晶圓片300設置於下石墨墊片200上，基板400與晶圓片300對位，以進行一預接合製程。接著，將上石墨墊片500覆蓋於基板上400，以及將上石墨製具600覆蓋於上石墨墊片500上，即完成預接合製程。Similarly, the set of objects 800 to be joined, the lower graphite mold 100 , the lower graphite gasket 200 , the upper graphite gasket 500 and the upper graphite mold 600 also need to undergo a pre-joining process before being thermocompression bonded. In detail, the set of objects to be bonded 800 includes the wafer 300 , the first metal layer 310 , the substrate 400 , and the second metal layer 410 . The placement sequence is to first place the lower graphite gasket 200 on the lower graphite tool 100, set the wafer 300 on the lower graphite gasket 200, and align the substrate 400 and the wafer 300 to perform a pre-bonding process. Next, the upper graphite gasket 500 is covered on the substrate 400, and the upper graphite mold 600 is covered on the upper graphite gasket 500, thereby completing the pre-bonding process.
接著，開始進行熱壓接合製程。於本發明中，熱壓接合指的是對晶圓片300及基板400加壓後再升溫，其溫度與壓力關係示意圖如圖3所示，其中C1為壓力曲線，以及C2為溫度曲線。在升溫階段持續加壓（例如：增加壓力或維持壓力），達到所需溫度後，持溫一段時間，同時持續加壓，使晶圓片300之第一金屬層310及基板400之第二金屬層410熔合，以形成共金狀態。Then, the thermocompression bonding process begins. In the present invention, thermocompression bonding refers to pressurizing the wafer 300 and the substrate 400 and then raising the temperature. The schematic diagram of the relationship between temperature and pressure is shown in Figure 3, in which C1 is the pressure curve and C2 is the temperature curve. During the heating stage, the pressure is continuously applied (for example, increasing the pressure or maintaining the pressure). After reaching the required temperature, the temperature is maintained for a period of time while continuing to pressurize the first metal layer 310 of the wafer 300 and the second metal of the substrate 400 Layers 410 fuse to form a common gold state.
具體而言，在熱壓接合製程中，首先是將完成預接合製程的下石墨製具100、下石墨墊片200、晶圓片300、第一金屬層310、基板400、第二金屬層410、上石墨墊片500以及上石墨製具600放置在處於真空狀態下的腔體710中，並使下加熱裝置730與上加熱裝置720共同夾持預接合製程狀態下的下石墨製具100、下石墨墊片200、晶圓片300、第一金屬層310、基板400、第二金屬層410、上石墨墊片500及上石墨製具600。Specifically, in the thermocompression bonding process, first, the lower graphite tool 100, the lower graphite gasket 200, the wafer 300, the first metal layer 310, the substrate 400, and the second metal layer 410 that have completed the pre-bonding process are assembled. The upper graphite gasket 500 and the upper graphite mold 600 are placed in the cavity 710 in a vacuum state, and the lower heating device 730 and the upper heating device 720 jointly clamp the lower graphite mold 100 in the pre-joining process state. The lower graphite gasket 200 , the wafer 300 , the first metal layer 310 , the substrate 400 , the second metal layer 410 , the upper graphite gasket 500 and the upper graphite tool 600 .
接著，請參考圖4及圖5。圖4為加壓前晶圓片300及基板400之示意圖。圖5為加壓後晶圓片300及基板400之示意圖。由於晶圓片300存在翹曲值，為了避免第一金屬層310及第二金屬層410熔合後形成之合金層340被破壞，需先對晶圓片300加壓，使其平坦。詳言之，半導體製程系統1000透過熱壓接合模組700之加壓氣缸740帶動加壓機構750，對上石墨製具600、上石墨墊片500、基板400、第二金屬層410、晶圓片300、第一金屬層310、下石墨墊片200及下石墨製具100加壓一段時間，使第一金屬層310及第二金屬層410平坦。Next, please refer to Figure 4 and Figure 5. FIG. 4 is a schematic diagram of the wafer 300 and the substrate 400 before pressing. FIG. 5 is a schematic diagram of the wafer 300 and the substrate 400 after pressing. Since the wafer 300 has a warpage value, in order to prevent the alloy layer 340 formed after the first metal layer 310 and the second metal layer 410 from being fused from being damaged, the wafer 300 needs to be pressurized first to make it flat. Specifically, the semiconductor process system 1000 drives the pressurizing mechanism 750 through the pressurizing cylinder 740 of the thermocompression bonding module 700 to align the upper graphite tool 600, the upper graphite gasket 500, the substrate 400, the second metal layer 410, and the wafer. The sheet 300, the first metal layer 310, the lower graphite gasket 200 and the lower graphite tool 100 are pressed for a period of time to make the first metal layer 310 and the second metal layer 410 flat.
在加壓一段時間後，半導體製程系統1000透過熱壓接合模組700之下加熱裝置730加熱下石墨製具100、下石墨墊片200、晶圓片300及第一金屬層310，以使第一金屬層310升溫，並同時透過熱壓接合模組700之上加熱裝置720加熱上石墨製具600、上石墨墊片500、基板400及第二金屬層410，以使第二金屬層410升溫。After being pressurized for a period of time, the semiconductor process system 1000 heats the lower graphite tool 100, the lower graphite gasket 200, the wafer 300 and the first metal layer 310 through the heating device 730 under the thermocompression bonding module 700, so that the third A metal layer 310 is heated, and at the same time, the upper graphite tool 600, the upper graphite gasket 500, the substrate 400 and the second metal layer 410 are heated through the heating device 720 on the thermocompression bonding module 700, so that the second metal layer 410 is heated. .
當第一金屬層310及第二金屬層410達到可彼此熔合的狀態，上加熱裝置720及下加熱裝置730不再繼續升溫，且同時將溫度維持在第一金屬層310及第二金屬層410可熔合共金的狀態。熱壓接合模組700經持溫段作業完成時，透過一氮氣冷卻腔體710，並經由排風通道770將腔體710中之氮氣排出。When the first metal layer 310 and the second metal layer 410 reach a state where they can be fused to each other, the upper heating device 720 and the lower heating device 730 no longer continue to raise the temperature, and at the same time maintain the temperature of the first metal layer 310 and the second metal layer 410 The state of fusible alloys. When the thermocompression bonding module 700 completes the temperature holding section, a nitrogen gas is used to cool the cavity 710 , and the nitrogen gas in the cavity 710 is discharged through the exhaust channel 770 .
此外，在持溫階段，熱壓接合模組700施加於上石墨製具600、上石墨墊片500、基板400、第二金屬層410、晶圓片300、第一金屬層310、下石墨墊片200及下石墨製具100的壓力可持續增加或維持。在第一金屬層310及第二金屬層410熔合後，熱壓接合模組700仍會維持壓力一段時間，使第一金屬層310及第二金屬層410形成一合金層340，如圖6所示，即完成熱壓接合製程。In addition, during the temperature holding stage, the thermocompression bonding module 700 is applied to the upper graphite mold 600, the upper graphite gasket 500, the substrate 400, the second metal layer 410, the wafer 300, the first metal layer 310, and the lower graphite gasket. The pressure of the sheet 200 and the lower graphite tool 100 can be continuously increased or maintained. After the first metal layer 310 and the second metal layer 410 are fused, the thermocompression bonding module 700 will still maintain pressure for a period of time so that the first metal layer 310 and the second metal layer 410 form an alloy layer 340, as shown in Figure 6 displays, the thermocompression bonding process is completed.
請參考圖7及圖8，其分別為晶圓片300去除載板330前及去除載板330後之示意圖。晶圓片300由一磊晶層320及一載板330構成，磊晶層320係成長於載板330上，如圖7所示。熱壓接合製程完成後，以適當藥液移除載板330，即可得到包含基板400、合金層340及磊晶層320，如圖8所示，並根據磊晶層320之一狀態判斷磊晶層320之一良率。此外，在未使用藥液去除載板330前，若以超音波檢驗，如圖9中所示，可觀察到第一金屬層310及第二金屬層410熔合形成之合金層340狀態良好，以藥液去除載板330，亦可觀察到如圖10良好的晶圓片狀態。Please refer to FIGS. 7 and 8 , which are schematic diagrams of the wafer 300 before and after the carrier 330 is removed respectively. The wafer 300 is composed of an epitaxial layer 320 and a carrier plate 330. The epitaxial layer 320 is grown on the carrier plate 330, as shown in FIG. 7 . After the thermocompression bonding process is completed, the carrier plate 330 is removed with an appropriate chemical solution to obtain the substrate 400, the alloy layer 340 and the epitaxial layer 320, as shown in Figure 8, and the epitaxial layer 320 is determined according to the state of the epitaxial layer 320. One yield of the crystal layer 320. In addition, if the carrier plate 330 is removed without using chemical solution, if the ultrasonic inspection is performed, as shown in FIG. 9 , it can be observed that the alloy layer 340 formed by the fusion of the first metal layer 310 and the second metal layer 410 is in good condition. After the chemical solution is removed from the carrier plate 330, a good wafer state as shown in Figure 10 can also be observed.
另外，請參考圖11至圖13，在進行前述所提及的熱壓接合製程時，因為晶圓片300存在翹曲值，若以圖11之溫度與壓力關係示意圖之升溫曲線進行熱壓接合製程，在持溫段時才施加外加壓力，即先升溫再加壓的狀況，會造成第一金屬層310及第二金屬層410在晶圓片300及基板400尚未彼此被壓平之前即熔合共金完成，此時再外加壓力，會破壞接合後的合金層340。In addition, please refer to FIGS. 11 to 13 . When performing the aforementioned thermocompression bonding process, because the wafer 300 has a warpage value, if the thermocompression bonding is performed based on the temperature rise curve of the schematic diagram of the temperature and pressure relationship in FIG. 11 In the process, external pressure is only applied during the temperature holding period, that is, the temperature is first raised and then pressurized, which will cause the first metal layer 310 and the second metal layer 410 to fuse before the wafer 300 and the substrate 400 are flattened to each other. When the alloying is completed, applying pressure again at this time will destroy the bonded alloy layer 340 .
在未使用藥液去除載板330狀態時，使用超音波檢驗其接合面，如圖12所示，很明顯的可觀察到整個接合後的合金狀態是相當混雜的狀態，此熱壓接合的過程是使用圖11所示先升溫再加壓的時序造成。當以藥液去除載板330時，能得到如圖13所示之晶圓片300的狀態，明顯的能看到許多連續性的裂痕。When the carrier plate 330 is removed without using chemical liquid, ultrasonic waves are used to inspect the joint surface. As shown in Figure 12, it is obvious that the alloy state after the entire joint is quite mixed. This process of thermocompression jointing This is caused by using the timing sequence of first heating up and then pressurizing as shown in Figure 11. When the carrier plate 330 is removed with the chemical solution, the state of the wafer 300 is obtained as shown in FIG. 13 , and many continuous cracks can be clearly seen.
綜上所述，本發明之半導體製程方法係透過先加壓再升溫的順序，將晶圓片先壓平後再升溫，使晶圓片上的金屬層及基板上的金屬層在熔合形成合金狀態後，晶圓片及基板之接合面不因後續外加的壓力而被破壞。To sum up, the semiconductor manufacturing method of the present invention uses the sequence of first applying pressure and then raising temperature. The wafer is first flattened and then heated, so that the metal layer on the wafer and the metal layer on the substrate are fused to form an alloy state. Finally, the joint surface between the wafer and the substrate will not be damaged by subsequent external pressure.
上述之實施例僅用來例舉本發明之實施態樣，以及闡釋本發明之技術特徵，並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍，本發明之權利保護範圍應以申請專利範圍為準。The above-mentioned embodiments are only used to illustrate the implementation aspects of the present invention and to illustrate the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalence arrangements that can be easily accomplished by those familiar with this technology fall within the scope claimed by the present invention. The scope of protection of the rights of the present invention shall be subject to the scope of the patent application.
1000:半導體製程系統 100:下石墨製具 200:下石墨墊片 300:晶圓片 310:第一金屬層 320:磊晶層 330:載板 340:合金層 400:基板 410:第二金屬層 500:上石墨墊片 600:上石墨製具 700:熱壓接合模組 710:腔體 720:上加熱裝置 730:下加熱裝置 740:加壓氣缸 750:加壓機構 760:幫浦 770:排風通道 800:所需接合的物件集合 C1:壓力曲線 C2:溫度曲線1000:Semiconductor process system 100: Lower graphite tools 200: Lower graphite gasket 300:wafer 310: First metal layer 320: Epitaxial layer 330: Carrier board 340:Alloy layer 400:Substrate 410: Second metal layer 500: Upper graphite gasket 600: Graphite tools 700:Hot-compression bonding module 710:Cavity 720: Upper heating device 730: Lower heating device 740: Pressurized cylinder 750: Pressurizing mechanism 760:Pump 770:Exhaust channel 800: Set of objects to be joined C1: pressure curve C2: Temperature curve
圖1為本發明半導體製程系統之示意圖； 圖2為本發明預接合製程之示意圖； 圖3為本發明溫度與壓力關係示意圖； 圖4為本發明加壓前晶圓片及基板之示意圖； 圖5為本發明加壓後晶圓片及基板之示意圖； 圖6為本發明熱壓接合製程後形成合金層之示意圖； 圖7為本發明晶圓片去除載板前之示意圖； 圖8為本發明晶圓片去除載板後之示意圖； 圖9為本發明以超音波檢驗晶圓片之示意圖； 圖10為本發明先加壓再升溫之晶圓片之示意圖； 圖11為本發明溫度與壓力關係示意圖； 圖12為以超音波檢驗晶圓片之示意圖；以及 圖13為先升溫再加壓之晶圓片之示意圖。Figure 1 is a schematic diagram of the semiconductor manufacturing system of the present invention; Figure 2 is a schematic diagram of the pre-bonding process of the present invention; Figure 3 is a schematic diagram of the relationship between temperature and pressure in the present invention; Figure 4 is a schematic diagram of the wafer and substrate before pressing according to the present invention; Figure 5 is a schematic diagram of the wafer and substrate after pressurization according to the present invention; Figure 6 is a schematic diagram of the alloy layer formed after the hot press bonding process of the present invention; Figure 7 is a schematic diagram of the wafer before the carrier is removed according to the present invention; Figure 8 is a schematic diagram of the wafer of the present invention after removing the carrier board; Figure 9 is a schematic diagram of the present invention using ultrasonic to inspect wafers; Figure 10 is a schematic diagram of a wafer that is first pressurized and then heated according to the present invention; Figure 11 is a schematic diagram of the relationship between temperature and pressure in the present invention; Figure 12 is a schematic diagram of ultrasonic inspection of wafers; and Figure 13 is a schematic diagram of a wafer that is first heated and then pressurized.
1000:半導體製程系統1000:Semiconductor process system
100:下石墨製具100: Lower graphite tools
200:下石墨墊片200: Lower graphite gasket
340:合金層340:Alloy layer
500:上石墨墊片500: Upper graphite gasket
600:上石墨製具600: Graphite tools
700:熱壓接合模組700:Hot-compression bonding module
710:腔體710:Cavity
720:上加熱裝置720: Upper heating device
730:下加熱裝置730: Lower heating device
740:加壓氣缸740: Pressurized cylinder
750:加壓機構750: Pressurizing mechanism
760:幫浦760:Pump
770:排風通道770:Exhaust channel
| Application Number | Priority Date | Filing Date | Title |
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| TW112120722ATWI826330B (en) | 2023-06-02 | 2023-06-02 | Semiconductor processing system and semiconductor processing method thereof |
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| TW112120722ATWI826330B (en) | 2023-06-02 | 2023-06-02 | Semiconductor processing system and semiconductor processing method thereof |
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| TW202449929A TW202449929A (en) | 2024-12-16 |
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| TW201929093A (en)* | 2013-02-20 | 2019-07-16 | 日商半導體能源研究所股份有限公司 | Peeling method, semiconductor device, and peeling apparatus |
| TW202013631A (en)* | 2018-09-19 | 2020-04-01 | 台灣積體電路製造股份有限公司 | Semiconductor package |
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| TW201929093A (en)* | 2013-02-20 | 2019-07-16 | 日商半導體能源研究所股份有限公司 | Peeling method, semiconductor device, and peeling apparatus |
| TW202013631A (en)* | 2018-09-19 | 2020-04-01 | 台灣積體電路製造股份有限公司 | Semiconductor package |
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