TWI740848B - Implementing atomic layer deposition for gate dielectrics - Google Patents

Abstract

A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

Description

Translated fromChinese

實施原子層沉積以得閘極介電質Perform atomic layer deposition to obtain gate dielectric【相關申請案之交叉參考】[Cross reference of related applications]

本申請案主張2015年10月16日申請的名為「實施原子層沉積閘極介電質以得MOSFET裝置(Implementing Atomic Layer Deposition Gate Dielectrics for MOSFET Devices)」之美國臨時專利申請案第62/242,804號之優先權，其在內容不與本發明相衝突之程度下將該等內容特此以引用之方式併入本文中。This application claims the U.S. Provisional Patent Application No. 62/242,804 filed on October 16, 2015, entitled "Implementing Atomic Layer Deposition Gate Dielectrics for MOSFET Devices" To the extent that the content does not conflict with the present invention, such content is hereby incorporated by reference into this document.

本發明大體上係關於用於製造電子裝置之製程。更具體而言，本發明係關於經由原子層沉積(atomic layer deposition；ALD)形成過渡金屬矽酸鹽膜。The present invention generally relates to a process for manufacturing electronic devices. More specifically, the present invention relates to the formation of transition metal silicate films via atomic layer deposition (ALD).

原子層沉積(ALD)為一種經由依序分配各種前驅體而在基板上沉積薄膜之方法。習知ALD法可在包含反應室、基板固持器、氣流系統及排氣系統之反應系統中進行。薄膜生長出現在前驅體吸附於基板上之活性部位上時，使得在基板上僅形成前驅體之單層。任何過量前驅體可隨後經由排氣自反應室排出。可引入另一前驅體以形成另一單層。可視需要重複製程以形成所需厚度之所需膜。Atomic layer deposition (ALD) is a method of depositing thin films on a substrate by sequentially distributing various precursors. The conventional ALD method can be performed in a reaction system including a reaction chamber, a substrate holder, a gas flow system, and an exhaust system. Film growth occurs when the precursor is adsorbed on the active site on the substrate, so that only a single layer of the precursor is formed on the substrate. Any excess precursor can then be exhausted from the reaction chamber via exhaust gas. Another precursor can be introduced to form another monolayer. The replication process can be repeated as needed to form the required film of the required thickness.

ALD製程尤其對在互補金屬氧化物半導體(complementary metal oxide semiconductor；CMOS)裝置中形成閘極介電質有效。多年來，針對CMOS應用中之組件，已使用氧化矽(SiO₂)作為電晶體閘極介電質及閘極介電質。然而，伴隨組件尺寸之減小，SiO₂已展現出呈漏電流增加形式之成問題的影響。控制伴隨尺寸限制之漏電流已證明對SiO₂具有挑戰性。The ALD process is particularly effective for forming gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. For many years, for components in CMOS applications, silicon oxide (SiO₂ ) has been used as transistor gate dielectric and gate dielectric. However, with the reduction in device size, SiO₂ has exhibited a problematic effect in the form of an increase in leakage current. Controlling the leakage current with size limitation has proven to be challenging_{for SiO 2.}

在形成閘極介電質方面，具有高介電質常數之介電材料(「高k介電質」)已顯示出具有為了達成較小裝置幾何結構同時控制漏電及其他電標準之效能特徵。考慮到此等所期望之目標，Wang等人之美國專利第7,795,160號揭示了在基板表面上對保形金屬矽酸鹽膜進行控制沉積之方法。不同於先前SiO₂法，所揭示之方法可用於形成，特定言之，針對各種應用，諸如CMOS裝置中之閘極堆疊、DRAM裝置中之介電質層及其他基於電容器之裝置之組件的矽酸鉿(HfSiO_x)及矽酸鋯(ZrSiO_x)膜。HfSiO_x及ZrSiO_x在較小裝置幾何結構中之積體電路中提供熱穩定性及裝置效能。In terms of forming gate dielectrics, dielectric materials with high dielectric constants ("high-k dielectrics") have been shown to have performance characteristics for achieving smaller device geometries while controlling leakage and other electrical standards. In consideration of these desired goals, US Patent No. 7,795,160 to Wang et al. discloses a method for controlled deposition of a conformal metal silicate film on the surface of a substrate. Different from the previous SiO₂ method, the disclosed method can be used to form, in particular, for various applications, such as gate stacks in CMOS devices, dielectric layers in DRAM devices, and other components of capacitor-based devices. Hafnium oxide (HfSiO_x ) and zirconium silicate (ZrSiO_x ) films. HfSiO_x and ZrSiO_x provide thermal stability and device performance in integrated circuits in smaller device geometries.

亦不同於先前SiO₂法，Raisanen之美國專利第8,071,452號揭示了一種用於ALD沉積金屬膜層以便用於高k介電質材料中之方法。特定言之，揭示了一種用於沉積氧化鉿鑭(HfLaO)層之方法。該方法使得HfLaO介電層經設計具有所需介電質常數及/或其他可控制特徵。Also different from the previous SiO₂ method, U.S. Patent No. 8,071,452 to Raisanen discloses a method for ALD to deposit metal film layers for use in high-k dielectric materials. Specifically, a method for depositing a hafnium lanthanum oxide (HfLaO) layer is disclosed. This method enables the HfLaO dielectric layer to be designed to have the required dielectric constant and/or other controllable characteristics.

因此，需要一種用於形成達到所需介電質常數且展示可靠性之過渡金屬膜的方法。Therefore, there is a need for a method for forming a transition metal film that achieves the required dielectric constant and exhibits reliability.

根據本發明之至少一個具體實例，揭示一種形成膜之方法。該方法包含：在反應室中提供用於加工之基板；在該基板上進行矽前驅體沉積；及在該基板上進行金屬前驅體沉積；其中該矽前驅體沉積步驟進行X次；其中該金屬前驅體沉積步驟進行Y次；其中形成過渡金屬矽酸鹽膜；其中來自該金屬前驅體沉積步驟之金屬前驅體包含鍵結至氮原子或碳原子之金屬原子。According to at least one specific example of the present invention, a method of forming a film is disclosed. The method includes: providing a substrate for processing in a reaction chamber; performing a silicon precursor on the substrateAnd depositing a metal precursor on the substrate; wherein the silicon precursor deposition step is performed X times; wherein the metal precursor deposition step is performed Y times; wherein a transition metal silicate film is formed; wherein the metal precursor is derived The metal precursor of the deposition step contains metal atoms bonded to nitrogen atoms or carbon atoms.

根據本發明之至少一個具體實例，揭示一種形成過渡金屬矽酸鹽膜之方法。該方法包含：在反應室中提供用於加工之基板；在該基板上進行矽前驅體沉積，進行該矽前驅體沉積包含：脈衝矽前驅體；用吹掃氣體自該反應室吹掃該矽前驅體；脈衝氧化前驅體；及用該吹掃氣體自該反應室吹掃該氧化前驅體；在該基板上進行金屬前驅體沉積，進行該金屬前驅體沉積包含：脈衝金屬前驅體；用吹掃氣體自該反應室吹掃該金屬前驅體；脈衝氧化前驅體；及用該吹掃氣體自該反應室吹掃該氧化前驅體；其中該矽前驅體沉積步驟重複X次；其中該金屬前驅體沉積步驟重複Y次；且其中形成過渡金屬矽酸鹽膜；其中該金屬前驅體包含鍵結至氮原子或碳原子之金屬原子。According to at least one specific example of the present invention, a method of forming a transition metal silicate film is disclosed. The method includes: providing a substrate for processing in a reaction chamber; depositing a silicon precursor on the substrate, and depositing the silicon precursor includes: pulsing the silicon precursor; purging the silicon from the reaction chamber with a purge gas Precursor; pulse oxidation precursor; and purging the oxidation precursor from the reaction chamber with the purge gas; depositing a metal precursor on the substrate, and depositing the metal precursor includes: pulsed metal precursor; using blowing Purge gas purges the metal precursor from the reaction chamber; pulse oxidation precursor; and use the purge gas to purge the oxidation precursor from the reaction chamber; wherein the silicon precursor deposition step is repeated X times; wherein the metal precursor The bulk deposition step is repeated Y times; and a transition metal silicate film is formed therein; wherein the metal precursor includes a metal atom bonded to a nitrogen atom or a carbon atom.

出於概述本發明及所達成的優於先前技術之優點的目的，已在上文中對本發明之某些目標及優點加以描述。當然，應理解，未必所有的該等目標或優點均可根據本發明之任何特定具體實例而達成。因此，舉例而言，熟習此項技術者將認識到，可以如本文中所教示或建議來達成或最佳化一個優點或一組優點而不一定達成本文中可能教示或建議的其他目標或優點的方式來實施或進行本發明。For the purpose of summarizing the present invention and the advantages achieved over the prior art, certain objectives and advantages of the present invention have been described above. Of course, it should be understood that not all of these goals or advantages can be achieved according to any specific embodiment of the present invention. Therefore, for example, those skilled in the art will realize that one advantage or set of advantages can be achieved or optimized as taught or suggested in this article, but not necessarily achieved in other goals or advantages that may be taught or suggested in this article. Way to implement or carry out the present invention.

所有此等具體實例均意欲處於本文所揭示之本發明範圍內。此等及其他具體實例將自以下參考附圖的某些具體實例之詳細描述而對熟習此項技術者變得顯而易見，但本發明並不受限於所揭示之任何特定具體實例。All these specific examples are intended to be within the scope of the invention disclosed herein. These and other specific examples will be derived from the following detailed description of some specific examples with reference to the accompanying drawingsIt becomes obvious to those skilled in the art, but the present invention is not limited to any specific specific examples disclosed.

100:氧化矽子循環100: Silica sub-cycle

110:矽(Si)前驅體脈衝/吹掃110: Silicon (Si) precursor pulse/purge

120:氧前驅體脈衝/吹掃120: Oxygen precursor pulse/purge

200:金屬氧化物子循環或氧化鑭子循環或稀土金屬前驅體子循環200: Metal oxide sub-cycle or lanthanum oxide sub-cycle or rare earth metal precursor sub-cycle

210:金屬前驅體脈衝/吹掃210: Metal precursor pulse/purge

220:氧前驅體脈衝/吹掃220: oxygen precursor pulse/purge

300:主重複循環300: Main repeat loop

310:重複循環310: Repeat loop

320:重複循環320: repeat loop

本文所揭示的本發明之此等及其他特徵、態樣及優點會參照某些具體實例之圖式描述於下文中，其意欲說明但並非限制本發明。These and other features, aspects and advantages of the present invention disclosed herein will be described below with reference to the drawings of certain specific examples, which are intended to illustrate but not to limit the present invention.

圖1為展示根據本發明之至少一個具體實例之方法的圖。Fig. 1 is a diagram showing a method according to at least one specific example of the present invention.

圖2為展示根據本發明之至少一個具體實例之方法的圖。Fig. 2 is a diagram showing a method according to at least one specific example of the present invention.

圖3為展示根據本發明之至少一個具體實例之方法的圖。Fig. 3 is a diagram showing a method according to at least one specific example of the present invention.

圖4為展示根據本發明之至少一個具體實例之方法的圖。Fig. 4 is a diagram showing a method according to at least one specific example of the present invention.

圖5為展示根據本發明之至少一個具體實例，生長速率及矽併入隨脈衝比而變化之圖。FIG. 5 is a graph showing the growth rate and silicon incorporation as a function of pulse ratio according to at least one specific example of the present invention.

圖6為展示根據本發明之至少一個具體實例之拉塞福逆散射(Rutherford Back Scattering)分析的表。Fig. 6 is a table showing Rutherford Back Scattering analysis according to at least one specific example of the present invention.

圖7為根據本發明之至少一個具體實例之反應系統的示意圖。Fig. 7 is a schematic diagram of a reaction system according to at least one specific example of the present invention.

應瞭解，圖式中之元件係為簡單及清楚起見而說明且不必按比例繪製。舉例而言，可相對於其他元件將圖式中之一些元件之尺寸擴大以幫助改良對所說明之本發明之具體實例的理解。It should be understood that the elements in the drawings are explained for simplicity and clarity and do not have to be drawn to scale. For example, the size of some elements in the drawings can be enlarged relative to other elements to help improve the understanding of the illustrated specific examples of the present invention.

儘管在下文中揭示某些具體實例及實例，但彼等熟習此項技術者應理解，本發明延伸超出本發明所具體揭示之具體實例及/或用途及其顯而易見之修改及等效物。因此，所揭示的本發明之範圍意欲不應受下文所述之所具體揭示之具體實例限制。Although some specific examples and examples are disclosed below, those skilled in the art should understand that the present invention extends beyond the specific examples and/or uses specifically disclosed in the present invention and obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the present invention disclosed should not be limited by the specific examples specifically disclosed below.

圖1展示根據本發明之至少一個具體實例，其中可在基板上形成過渡金屬矽酸鹽膜之製程。基板可為矽基板、經矽覆蓋之鍺基板、Ge基板、SiGe基板或III-V半導體基板(諸如InGaAs)。為了形成金屬矽酸鹽膜，諸如矽酸鑭(LaSiO)膜，主循環可包含兩個子循環。一個子循環可為氧化矽子循環100，而另一子循環可為金屬氧化物子循環200。氧化矽子循環100可經由重複循環310重複進行，而金屬氧化物子循環200可經由重複循環320重複進行。整個製程可經由主重複循環300重複進行。根據至少一個具體實例，氧化矽子循環100可經由重複循環310重複X次，且金屬氧化物子循環200可經由重複循環320重複Y次以完成一個主循環。X：Y之比可用於調整LaSiO膜之生長速率。Fig. 1 shows at least one specific example according to the present invention, in which a transition metal silicate film can be formed on a substrate. The substrate may be a silicon substrate, a germanium substrate covered with silicon, a Ge substrate, a SiGe substrate, or a III-V semiconductor substrate (such as InGaAs). In order to form a metal silicate film, such as a lanthanum silicate (LaSiO) film, the main cycle may include two sub-cycles. One sub-cycle may be thesilicon oxide sub-cycle 100, and the other sub-cycle may be themetal oxide sub-cycle 200. Thesilicon oxide sub-cycle 100 can be repeated through the repeatingcycle 310, and themetal oxide sub-cycle 200 can be repeated through the repeatingcycle 320. The entire process can be repeated through themain repeat cycle 300. According to at least one specific example, thesilicon oxide sub-cycle 100 can be repeated X times through therepetition cycle 310, and themetal oxide sub-cycle 200 can be repeated Y times through therepetition cycle 320 to complete one main cycle. The ratio of X:Y can be used to adjust the growth rate of the LaSiO film.

在本發明之至少一個具體實例中，可改變子循環之次序，使得子循環之次序可呈夾層結構形式。舉例而言，若氧化矽子循環與氧化鑭子循環之脈衝比等於2：1，則可以一個氧化矽子循環100，繼之以氧化鑭子循環200，且隨後氧化矽子循環100形式進行前驅體沉積。在本發明之另一具體實例中，子循環之次序可呈使得任一子循環可為第一個或最後一個之形式。為了有效地對膜之組成與距基板之垂直距離進行評級，可以非固定比插入子循環。In at least one specific example of the present invention, the order of the sub-cycles can be changed so that the order of the sub-cycles can be in the form of a sandwich structure. For example, if the pulse ratio of the silicon oxide sub-cycle to the lanthanum oxide sub-cycle is equal to 2:1, then a silicon oxide sub-cycle of 100, followed by a lanthanum oxide sub-cycle of 200, and then a silicon oxide sub-cycle of 100 can be precursors Body deposition. In another specific example of the present invention, the order of the sub-cycles may be such that any one of the sub-cycles can be the first or the last. In order to effectively rate the composition of the film and the vertical distance from the substrate, sub-cycles can be inserted in a non-fixed ratio.

產生具有相似特性之膜的不同子循環次序亦可為可能的。圖2展示根據本發明之至少一個具體實例之製程，其中金屬氧化物子循環200出現在氧化矽子循環100之前。此外，根據本發明之至少一個具體實例，鑭前驅體脈衝/吹掃，繼之以矽前驅體脈衝/吹掃，且隨後氧前驅體脈衝/吹掃可產生與藉由上文所述之夾層次序所製造之膜相似的膜。It is also possible to produce different sub-cycle sequences of films with similar characteristics. FIG. 2 shows a process according to at least one specific example of the present invention, in which themetal oxide sub-cycle 200 occurs before thesilicon oxide sub-cycle 100. In addition, according to at least one specific example of the present invention, the lanthanum precursor pulse/purge, followed by the silicon precursor pulse/purge, and then the oxygen precursor pulse/purge can be generated by the interlayer described above. The film produced in the sequence is similar to the film.

圖3展示根據本發明之至少一個具體實例的氧化矽子循環100。氧化矽子循環100可包含矽(Si)前驅體脈衝/吹掃110及氧前驅體脈衝/吹掃120。Si前驅體可包含以下中之至少一者：基於鹵化矽之前驅體，諸如四氯化矽(SiCl₄)、三氯矽烷(SiCl₃H)、二氯矽烷(SiCl₂H₂)、一氯矽烷(SiClH₃)、六氯二矽烷(HCDS)、八氯三矽烷(OCTS)、碘化矽或溴化矽；或基於胺基之前驅體，諸如六(乙胺基)二矽烷(AHEAD)及SiH[N(CH₃)₂]₃(3DMASi)、雙(二烷胺基)矽烷(諸如雙(二乙胺基)矽烷(BDEAS))；及單(烷胺基)矽烷，諸如二異丙基胺基矽烷；或基於氧基矽烷之前驅體，諸如四乙氧基矽烷(Si(OC₂H₅)₄)。此製程之典型溫度在100℃至450℃、或150℃至400℃、或175℃至350℃或200℃至300℃範圍內，而壓力可在1至10托範圍內。Figure 3 shows asilica sub-cycle 100 according to at least one specific example of the present invention. Thesilicon oxide sub-cycle 100 may include a silicon (Si) precursor pulse/purge 110 and an oxygen precursor pulse/purge 120. The Si precursor may include at least one of the following: a precursor based on silicon halide, such as silicon tetrachloride (SiCl₄ ), trichlorosilane (SiCl₃ H), dichlorosilane (SiCl₂ H₂ ), monochloride Silane (SiClH₃ ), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), silicon iodide or silicon bromide; or based on amine-based precursors, such as hexa(ethylamino)disilane (AHEAD) And SiH[N(CH₃ )₂ ]₃ (3DMASi), bis(dialkylamino)silane (such as bis(diethylamino)silane (BDEAS)); and mono(alkylamino)silane, such as diiso Propylaminosilane; or based on oxysilane precursors, such as tetraethoxysilane (Si(OC₂ H₅ )₄ ). The typical temperature of this process is in the range of 100°C to 450°C, or 150°C to 400°C, or 175°C to 350°C or 200°C to 300°C, and the pressure can be in the range of 1 to 10 Torr.

在根據本發明之其他具體實例中，氧前驅體脈衝/吹掃120可涉及以下中之至少一者之脈衝及吹掃：水(H₂O)；雙原子氧氣(O₂)；過氧化氫(H₂O₂)；臭氧(O₃)；氧氣電漿；原子氧(O)；氧自由基；或甲基醇(CH₃OH)。不同氧化前驅體可用於不同循環可為可能的；舉例而言，O₃可用於氧化矽子循環，而水可用於氧化鑭子循環。在本發明之其他具體實例中，使用不包含臭氧、O₂、H₂O₂、H₂O、甲基醇或氧氣電漿之氧源可為可能的。In other specific examples according to the present invention, the oxygen precursor pulse/purge 120 may involve the pulse and purge of at least one of the following: water (H₂ O); diatomic oxygen (O₂ ); hydrogen peroxide (H₂ O₂ ); ozone (O₃ ); oxygen plasma; atomic oxygen (O); oxygen radicals; or methyl alcohol (CH₃ OH). It may be possible that different oxidation precursors can be used in different cycles; for example, O₃ can be used in the silicon oxide sub-cycle, and water can be used in the lanthanum oxide sub-cycle. In other specific examples of the present invention, it may be possible to use an oxygen source that_{does not contain ozone, O 2} , H₂ O₂ , H_{2 O, methyl alcohol, or oxygen plasma.}

圖4展示根據本發明之至少一個具體實例的金屬氧化物子循環200。金屬氧化物子循環(或稀土金屬前驅體子循環)200可包含金屬前驅體脈衝/吹掃210及氧前驅體脈衝/吹掃220。在本發明之一些具體實例中，稀土金屬前驅體(諸如鑭(La)、鈧(Sc)、釔(Y)、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu)可包含位於稀土金屬與氮之間的鍵或位於稀土金屬與碳之間的鍵。在本發明之一些具體實例中，稀土金屬前驅體可包含經由兩個氮原子鍵結至鑭之雙牙配位體。在本發明之一些具體實例中，稀土金屬前驅體(例如，鑭)中之稀土金屬具有+III之氧化態。在本發明之一些具體實例中，稀土金屬前驅體具有三個有機配位體，諸如含有氮或碳之配位體。在一些具體實例中，稀土金屬前驅體(例如，鑭)可不包含矽或鍺。在一些具體實例中，金屬前驅體可包含鍵結至氮原子或碳原子之金屬原子。Figure 4 shows ametal oxide sub-cycle 200 according to at least one specific example of the present invention. The metal oxide sub-cycle (or rare earth metal precursor sub-cycle) 200 may include a metal precursor pulse/purge 210 and an oxygen precursor pulse/purge 220. In some specific examples of the present invention, rare earth metal precursors (such as lanthanum (La), scandium (Sc), yttrium (Y), Ce, Pr, Nd, Sm,Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu) may include a bond between the rare earth metal and nitrogen or a bond between the rare earth metal and carbon. In some embodiments of the present invention, the rare earth metal precursor may include a bidentate ligand bonded to lanthanum via two nitrogen atoms. In some specific examples of the present invention, the rare earth metal in the rare earth metal precursor (for example, lanthanum) has an oxidation state of +III. In some specific examples of the present invention, the rare earth metal precursor has three organic ligands, such as ligands containing nitrogen or carbon. In some specific examples, the rare earth metal precursor (for example, lanthanum) may not contain silicon or germanium. In some specific examples, the metal precursor may include a metal atom bonded to a nitrogen atom or a carbon atom.

在本發明之至少一個具體實例中，金屬前驅體脈衝/吹掃210中之金屬前驅體可為以下中之一者：基於脒基之前驅體，諸如甲脒鑭(La(FAMD)₃)或參(N,N′-二異丙基乙脒基)鑭(La(iPrAMD)₃)；二酮前驅體，諸如La(THD)₃；基於環戊二烯基(Cp)之前驅體，諸如參(異丙基-環戊二烯基)鑭(La(iPrCp)₃)；或基於醯胺基之化學物質，諸如參(雙三甲基矽烷基醯胺基)鑭(La[N(SiMe₃)₂]₃)；或上述之混合組合。在根據本發明之其他具體實例中，金屬前驅體可為在氮之間具有鍵的鑭前驅體或其他稀土金屬前驅體，諸如脒基鑭。脒基化合物可包含非定域電子，其會在氮與鑭或稀土金屬之間產生鍵。在根據本發明之其他具體實例中，金屬前驅體可為具有伴隨碳之鍵的鑭前驅體或其他稀土金屬前驅體，諸如環戊二烯基鑭。視為化合物之此金屬前驅體可包含非定域電子，其中在碳及鑭或稀土之間形成鍵。在根據本發明之其他具體實例中，金屬前驅體可為具有伴隨氮及碳之鍵的鑭前驅體或其他稀土金屬前驅體，諸如脒基鑭及環戊二烯基鑭化合物。In at least one specific example of the present invention, the metal precursor in the metal precursor pulse/purge 210 can be one of the following: an amidine-based precursor, such as lanthanum formamidine (La(FAMD)₃ ) or Ref. (N,N'-diisopropylacetamidino) lanthanum (La(iPrAMD)₃ ); diketone precursors, such as La(THD)₃ ; based on cyclopentadienyl (Cp) precursors, such as Ginseng (isopropyl-cyclopentadienyl) lanthanum (La(iPrCp)₃ ); or chemical substances based on amide groups, such as ginseng (bistrimethylsilyl amide group) lanthanum (La[N(SiMe₃ )₂ ]₃ ); or a mixed combination of the above. In other specific examples according to the present invention, the metal precursor may be a lanthanum precursor having a bond between nitrogen or other rare earth metal precursors, such as amidine-based lanthanum. Amidino compounds may contain non-localized electrons, which create bonds between nitrogen and lanthanum or rare earth metals. In other specific examples according to the present invention, the metal precursor may be a lanthanum precursor having a bond accompanying carbon or other rare earth metal precursors, such as cyclopentadienyl lanthanum. This metal precursor considered as a compound may contain non-localized electrons in which bonds are formed between carbon and lanthanum or rare earths. In other specific examples according to the present invention, the metal precursor may be a lanthanum precursor having nitrogen and carbon bonds or other rare earth metal precursors, such as amidino lanthanum and cyclopentadienyl lanthanum compounds.

在根據本發明之其他具體實例中，氧前驅體脈衝/吹掃220可涉及以下中之至少一者：水(H₂O)、雙原子氧氣(O₂)、過氧化氫(H₂O₂)、臭氧(O₃)、氧氣電漿、氧自由基、原子氧或甲基醇(CH₃OH)。金屬氧化物子循環200可經氧化釔子循環或另一元素之子循環取代，其視最終所需產物為何物而定。其他元素可尤其為鑭系元素、鉺、氧化鉺、鎂、氧化鎂、鈧或氧化鈧。此等其他材料亦可為較佳的，因為其展現引起V_t移位之能力。對於釔而言，釔子循環可包含釔脈衝、釔前驅體之吹掃、H₂O脈衝及H₂O前驅體之吹掃。釔前驅體可為以下中之一者：基於環戊二烯基(Cp)之化學物質，諸如Y(EtCp)₃及參(甲基環戊二烯基)釔(Y(MeCp)₃)；基於脒基之前驅體，諸如參(N,N'-二異丙基乙脒基)釔(TDIPAY)；二酮前驅體，諸如Y(THD)₃及參(2,2,6,6-四甲基-3,5-辛二酮基)釔(Y(tmod)₃)；或基於醯胺之前驅體，諸如參[N,N-雙(三甲基矽烷基)醯胺]釔。此製程之典型溫度在100℃至450℃、或150℃至400℃、或175℃至350℃或200℃至300℃範圍內，而壓力在1至10托範圍內。In other specific examples according to the present invention, the oxygen precursor pulse/purge 220 may involve at least one of the following: water (H₂ O), diatomic oxygen (O₂ ), hydrogen peroxide (H₂ O₂₎ ), ozone (O₃ ), oxygen plasma, oxygen radicals, atomic oxygen or methyl alcohol (CH₃ OH). Themetal oxide sub-cycle 200 can be replaced by a yttrium oxide sub-cycle or another element's sub-cycle, depending on the final product desired. The other elements may especially be lanthanides, erbium, erbium oxide, magnesium, magnesium oxide, scandium or scandium oxide. These other materials may also be preferable because they exhibit the ability to_{cause V t to shift.} For yttrium, the yttrium sub-cycle may include yttrium pulses, yttrium precursor purging, H₂ O pulses, and H₂ O precursor purging. The yttrium precursor can be one of the following: cyclopentadienyl (Cp)-based chemical substances, such as Y(EtCp)₃ and ginseng (methylcyclopentadienyl)yttrium (Y(MeCp)₃ ); Based on amidino precursors, such as (N,N'-diisopropylacetamidino) yttrium (TDIPAY); diketone precursors, such as Y(THD)₃ and reference (2,2,6,6- Tetramethyl-3,5-octanedionyl)yttrium (Y(tmod)₃ ); or based on amide precursors, such as [N,N -bis(trimethylsilyl)amide]yttrium. The typical temperature of this process is in the range of 100°C to 450°C, or 150°C to 400°C, or 175°C to 350°C or 200°C to 300°C, and the pressure is in the range of 1 to 10 Torr.

氧化矽子循環與金屬氧化物子循環之脈衝比X：Y可允許將矽(Si)併入金屬矽酸鹽膜中。脈衝比X：Y可變動為5：1、7：1、10：1及20：1。圖5展示基於不同脈衝比X：Y之矽併入之圖。X：Y脈衝比愈高，矽併入愈大，使得矽含量愈高。控制脈衝比可能夠使Si併入超過65%。Si含量可自低含量至高含量不等。舉例而言，矽含量可變動為大於5原子% Si、大於10原子% Si、大於15原子% Si或大於20原子% Si。純氧化矽膜之矽含量可為大約33原子%。在形成LaSiO膜之情況下，較高Si含量可降低LaO之吸濕特性且亦改良與後續高k生長之相容性。超過65%之矽併入明顯高於矽酸鋁(AlSiO)之矽併入，其平均值往往為30%至40%(TMA相對於AlCl₃製程而言)。The pulse ratio X:Y of the silicon oxide sub-cycle to the metal oxide sub-cycle allows silicon (Si) to be incorporated into the metal silicate film. The pulse ratio X:Y can be changed to 5:1, 7:1, 10:1 and 20:1. Figure 5 shows a graph of silicon incorporation based on different pulse ratios X:Y. X: The higher the Y pulse ratio, the greater the incorporation of silicon, and the higher the silicon content. Controlling the pulse ratio may enable Si to incorporate more than 65%. The Si content can vary from low content to high content. For example, the silicon content can be varied to be greater than 5 atomic% Si, greater than 10 atomic% Si, greater than 15 atomic% Si, or greater than 20 atomic% Si. The silicon content of the pure silicon oxide film can be about 33 atomic %. In the case of forming a LaSiO film, a higher Si content can reduce the moisture absorption characteristics of LaO and also improve the compatibility with subsequent high-k growth. The incorporation of more than 65% of silicon is significantly higher than that of aluminum silicate (AlSiO), and the average value is usually 30% to 40% (TMA is relative to the AlCl₃ process).

經由本發明之至少一個具體實例獲得之額外益處包括較低碳雜質含量。碳視為陷阱中心(trap center)且可能會降低使用所沉積膜形成之裝置的效能。因此，較低碳含量可為較佳的。Additional benefits obtained through at least one embodiment of the present invention include lower carbon impurity content. Carbon is regarded as a trap center and may reduce the performance of the device formed using the deposited film. Therefore, lower carbon content may be better.

若使用強氧反應物，諸如臭氧或氧氣電漿，則可容易形成碳。此等強反應物可導致基板較大程度地氧化。經由ALD沉積之習知LaOx膜指示在15%至20%之間的高碳雜質含量。此外，習知LaOx膜亦可顯示高氫氧化物雜質以及低矽併入。If a strong oxygen reactant, such as ozone or oxygen plasma, is used, carbon can be easily formed. These strong reactants can cause a greater degree of oxidation of the substrate. The conventional LaOx film deposited by ALD indicates a high carbon impurity content between 15% and 20%. In addition, the conventional LaOx film can also show high hydroxide impurities and low silicon incorporation.

根據本發明之至少一個具體實例，鹵化矽前驅體、具有伴隨氮原子/碳原子之鍵的稀土前驅體、合適氧前驅體(諸如水)及高遷移率通道材料之組合可為獲得較低碳雜質含量之原因。合適氧前驅體可導致基板較小程度地氧化，由此潛在地為額外材料(諸如藉由ALD形成之高k材料)的後續沉積提供良好表面或界面。According to at least one specific example of the present invention, a combination of a silicon halide precursor, a rare earth precursor with an accompanying nitrogen atom/carbon atom bond, a suitable oxygen precursor (such as water) and a high mobility channel material can be used to obtain lower carbon The reason for the impurity content. A suitable oxygen precursor can cause the substrate to oxidize to a lesser degree, thereby potentially providing a good surface or interface for the subsequent deposition of additional materials, such as high-k materials formed by ALD.

如圖6中所示，經由根據本發明之具體實例沉積之LaSiO膜指示小於5%的低得多的碳雜質含量，其視脈衝比X：Y而定。此等百分比經由拉塞福逆散射(Rutherford Back-Scattering；RBS)分析方法來測定。LaSiO膜亦可展現小於10原子%之氫雜質、小於約5原子%之碳雜質及/或小於約2原子%之氮雜質。根據本發明之至少一個具體實例，LaSiO膜之氫含量可為小於20原子%、小於15原子%、小於10原子%或小於5原子%。根據本發明之至少一個具體實例，LaSiO膜之碳含量可為小於10原子%、小於5原子%、小於2原子%或小於1原子%。根據本發明之至少一個具體實例，LaSiO膜之氮含量可為小於10原子%、小於5原子%、小於2原子%或小於1原子%。As shown in FIG. 6, the LaSiO film deposited via a specific example according to the present invention indicates a much lower carbon impurity content of less than 5%, which depends on the pulse ratio X:Y. These percentages are determined by Rutherford Back-Scattering (RBS) analysis method. The LaSiO film may also exhibit less than 10 atomic% of hydrogen impurities, less than about 5 atomic% of carbon impurities, and/or less than about 2 atomic% of nitrogen impurities. According to at least one specific example of the present invention, the hydrogen content of the LaSiO film may be less than 20 atomic %, less than 15 atomic %, less than 10 atomic %, or less than 5 atomic %. According to at least one specific example of the present invention, the carbon content of the LaSiO film may be less than 10 atomic %, less than 5 atomic %, less than 2 atomic %, or less than 1 atomic %. According to at least one specific example of the present invention, the nitrogen content of the LaSiO film can be less than 10 atomic %, less than 5 atomic %, less than 2 atomic %, or less than1 atomic %.

根據本發明之至少一個具體實例，可形成氫氧化鑭膜(La(OH)₃)。在本發明之至少一個具體實例中，對於純氫氧化鑭(La(OH)₃)膜而言，氫含量可小於43%。根據本發明之至少一個具體實例，氫氧化鑭膜可具有氫雜質，其範圍介於小於氫氧化物(OH)之20mol%、小於氫氧化物(OH)之15mol%、小於氫氧化物(OH)之10mol%或小於氫氧化物(OH)之5mol%。According to at least one specific example of the present invention, a lanthanum hydroxide film (La(OH)₃ ) can be formed. In at least one specific example of the present invention, for a pure lanthanum hydroxide (La(OH)₃ ) film, the hydrogen content may be less than 43%. According to at least one specific example of the present invention, the lanthanum hydroxide film may have hydrogen impurities in the range of less than 20 mol% of hydroxide (OH), less than 15 mol% of hydroxide (OH), and less than hydroxide (OH). ) 10mol% or less than 5mol% of hydroxide (OH).

圖7展示能夠進行根據本發明之至少一個具體實例之方法的反應系統設置。反應系統包括四個製程模組。製程模組(process module；PM)可包括Pulsar^® 3000模組或由ASM International N.V.提供之Horizon模組。其他反應系統設定可包括微型分批反應器、雙室模組反應器、分批反應器交叉流反應器或簇射頭反應器。晶圓處置系統可將經加工之晶圓轉移至不同模組。在一個製程模組中，可經由根據本發明之至少一個具體實例之方法形成鍺基板/矽鍺基板或III-V基板(諸如InGaAs)之界面層。在另一製程模組中，可進行其他顯影加工，諸如Ge/SiGe通道或III-V基板(諸如InGaAs)之表面鈍化。Fig. 7 shows the configuration of the reaction system capable of performing the method according to at least one specific example of the present invention. The reaction system includes four process modules. The process module (PM) can include the Pulsar^® 3000 module or the Horizon module provided by ASM International NV. Other reaction system settings can include micro-batch reactors, dual-chamber modular reactors, batch reactors, cross-flow reactors, or shower head reactors. The wafer handling system can transfer processed wafers to different modules. In a process module, the interface layer of germanium substrate/silicon germanium substrate or III-V substrate (such as InGaAs) can be formed by the method according to at least one specific example of the present invention. In another process module, other development processes can be performed, such as Ge/SiGe channel or III-V substrate (such as InGaAs) surface passivation.

所示及所述特定具體實例對本發明及其最佳模式進行說明且並不意欲以任何方式另外限制態樣及具體實例之範圍。實際上，出於簡潔起見，系統之習知製造、連接、製備及其他功能性態樣可不進行詳細描述。此外，不同圖式中所示之連線意欲表示不同要素之間的例示性功能關係及/或物理耦合。許多替代或附加功能關係或物理連接可存在於實際系統中，及/或可不存在於一些具體實例中。The specific specific examples shown and described illustrate the present invention and its best mode and are not intended to otherwise limit the aspects and the scope of the specific examples in any way. In fact, for the sake of brevity, the conventional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connections shown in different drawings are intended to represent exemplary functional relationships and/or physical couplings between different elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and/or may not exist in some specific examples.

應理解，本文中所述之組態及/或方法本質上為例示性的，且此等特定具體實例或實例不視為具有限制意義，原因在於可能存在諸多變化。本文所述之特定常式或方法可表示任何數目的加工策略中之一或多者。因此，所說明之各種動作可以所說明之順序、以其他順序進行，或在一些情況下加以省略。It should be understood that the configurations and/or methods described herein are exemplary in nature, and these specific specific examples or examples are not considered to have a limiting meaning because there may be many variations. The specific routines or methods described herein can represent one or more of any number of processing strategies. Therefore, the various actions described can be performed in the described order, in other orders, or omitted in some cases.

本發明之標的物包括本文中所揭示之各種製程、系統及組態，及其他特徵、功能、動作及/或特性，以及其任何及所有等效物的所有新穎但非顯而易見之組合及子組合。The subject matter of the present invention includes the various processes, systems and configurations disclosed herein, as well as other features, functions, actions and/or characteristics, as well as all novel but non-obvious combinations and sub-combinations of any and all equivalents thereof .

100‧‧‧氧化矽子循環100‧‧‧Silica sub-cycle

200‧‧‧金屬氧化物子循環或氧化鑭子循環或稀土金屬前驅體子循環200‧‧‧Metal oxide subcycle or lanthanum oxide subcycle or rare earth metal precursor subcycle

300‧‧‧主重複循環300‧‧‧Main repeat loop

310‧‧‧重複循環310‧‧‧Repeat loop

320‧‧‧重複循環320‧‧‧Repeat cycle

Claims (31)

Translated fromChinese

一種形成膜之方法，該方法包含以下步驟：在反應室中提供用於加工之基板；在該基板上進行矽前驅體沉積；及在該基板上進行金屬前驅體沉積；其中該矽前驅體沉積步驟進行X次；其中該金屬前驅體沉積步驟進行Y次；其中形成鑭金屬矽酸鹽膜；其中來自該金屬前驅體沉積步驟之金屬前驅體包含鍵結至氮原子或碳原子之金屬原子，其中該金屬前驅體包含以下中之至少一者：基於脒基之前驅體，其選自由甲脒鑭(La(FAMD)₃)、參(N,N'-二異丙基乙脒基)鑭(La(iPrAMD)₃)及參(N,N'-二異丙基乙脒基)釔(TDIPAY)組成之群；基於環戊二烯基(Cp)之前驅體，其選自參(異丙基-環戊二烯基)鑭(La(iPrCp)₃)、參(乙基環戊二烯基)釔(Y(EtCp)₃)及參(甲基環戊二烯基)釔(Y(MeCp)₃)組成之群；參(雙三甲基矽烷基醯胺基)鑭(La[N(SiMe₃)₂]₃)；基於二酮之前驅體，其選自La(THD)₃、Y(THD)₃及參(2,2,6,6-四甲基-3,5-辛二酮基)釔(Y(tmod)₃)組成之群；及參[N,N-雙(三甲基矽烷基)醯胺]釔，其中該進行矽前驅體沉積步驟進一步包含：脈衝矽前驅體；用吹掃氣體自該反應室吹掃該矽前驅體；脈衝氧化前驅體；用該吹掃氣體自該反應室吹掃該氧化前驅體，其中該進行金屬前驅體沉積步驟進一步包含：脈衝該金屬前驅體；用吹掃氣體自該反應室吹掃該金屬前驅體；脈衝該氧化前驅體或另一氧化前驅體；及用該吹掃氣體自該反應室吹掃該氧化前驅體或該另一氧化前驅體；及其中X與Y之比的範圍介於7：1與20：1之間。A method of forming a film, the method comprising the following steps: providing a substrate for processing in a reaction chamber; depositing a silicon precursor on the substrate; and depositing a metal precursor on the substrate; wherein the silicon precursor is deposited The steps are performed X times; wherein the metal precursor deposition step is performed Y times; wherein a lanthanum metal silicate film is formed; wherein the metal precursor from the metal precursor deposition step includes metal atoms bonded to nitrogen atoms or carbon atoms, Wherein the metal precursor includes at least one of the following: based on an amidine-based precursor, which is selected from the group consisting of lanthanum formamidine (La(FAMD)₃ ), and (N,N'-diisopropylacetamidino) lanthanum (La(iPrAMD)₃ ) and reference (N,N'-diisopropylacetamidino) yttrium (TDIPAY) group; based on cyclopentadienyl (Cp) precursor, which is selected from reference (iso Propyl-cyclopentadienyl) lanthanum (La(iPrCp)₃ ), ginseng (ethylcyclopentadienyl) yttrium (Y(EtCp)₃ ), and ginseng (methylcyclopentadienyl) yttrium (Y (MeCp)₃ ) group consisting of; ginseng (bistrimethylsilylamido) lanthanum (La[N(SiMe₃ )₂ ]₃ ); based on the diketone precursor, which is selected from La(THD)₃ , Y(THD)₃ and the group consisting of (2,2,6,6-tetramethyl-3,5-octanedionyl) yttrium (Y(tmod)₃ ); and reference [N, N -double (Trimethylsilyl)amide]yttrium, wherein the silicon precursor deposition step further comprises: pulsing a silicon precursor; purging the silicon precursor from the reaction chamber with a purge gas; pulse oxidizing the precursor; Purge gas purges the oxidation precursor from the reaction chamber, wherein the step of performing metal precursor deposition further comprises: pulsing the metal precursor; purging the metal precursor from the reaction chamber with a purge gas; pulsing the oxidation precursor And using the purge gas to purge the oxidation precursor or the another oxidation precursor from the reaction chamber; and the range of the ratio of X to Y is between 7:1 and 20:1 between.如申請專利範圍第1項之方法，其中該矽前驅體沉積步驟及該鑭前驅體沉積步驟的進行次序包含夾層次序，其中該夾層次序包含該矽前驅物沉積步驟的至少一個疊代，繼之以該鑭前驅體沉積步驟的至少一個疊代，繼之以該矽前驅體沉積步驟的至少一個疊代。Such as the method of claim 1, wherein the sequence of the silicon precursor deposition step and the lanthanum precursor deposition step includes an interlayer sequence, wherein the interlayer sequence includes at least one iteration of the silicon precursor deposition step, followed by At least one iteration of the lanthanum precursor deposition step is followed by at least one iteration of the silicon precursor deposition step.如申請專利範圍第2項之方法，其中該矽前驅體包含以下中之至少一者：基於鹵化矽之前驅體及基於胺基之前驅體。Such as the method of item 2 of the scope of patent application, wherein the silicon precursor includes at least one of the following: a silicon halide-based precursor and an amine-based precursor.如申請專利範圍第2項之方法，其中該氧化前驅體包含以下中之至少一者：水(H₂O)；過氧化氫(H₂O₂)；氧氣(O₂)；臭氧(O₃)；氧氣電漿；或甲基醇(CH₃OH)。Such as the method of item 2 of the scope of patent application, wherein the oxidation precursor contains at least one of the following: water (H₂ O); hydrogen peroxide (H₂ O₂ ); oxygen (O₂ ); ozone (O₃₎ ); oxygen plasma; or methyl alcohol (CH₃ OH).如申請專利範圍第1項之方法，其中該矽前驅體包含鹵化矽前驅體，其包含三氯矽烷(SiCl₃H)、二氯矽烷(SiCl₂H₂)、一氯矽烷(SiClH₃)、六氯二矽烷(HCDS)、及八氯三矽烷(OCTS)中的至少一者。Such as the method of the first item in the scope of patent application, wherein the silicon precursor includes a silicon halide precursor, which includes trichlorosilane (SiCl₃ H), dichlorosilane (SiCl₂ H₂ ), monochlorosilane (SiClH₃ ), At least one of hexachlorodisilane (HCDS) and octachlorotrisilane (OCTS).如申請專利範圍第5項之方法，其中該金屬前驅體包含以下中之至少一者：參(N,N'-二異丙基乙脒基)鑭(La(iPrAMD)₃)’及參(雙三甲基矽烷基醯胺基)鑭(La[N(SiMe₃)₂]₃)。Such as the method of item 5 of the scope of the patent application, wherein the metal precursor contains at least one of the following: reference (N,N'-diisopropylacetamidino) lanthanum (La(iPrAMD)₃ )'and reference ( Bistrimethylsilylamino)lanthanum (La[N(SiMe₃ )₂ ]₃ ).如申請專利範圍第5項之方法，其中該氧化前驅體包含以下中之至少一者：水(H₂O)；過氧化氫(H₂O₂)；氧氣(O₂)；臭氧(O₃)；氧氣電漿；原子氧(O)；氧自由基；或甲基醇(CH₃OH)。Such as the method of item 5 of the scope of patent application, wherein the oxidation precursor contains at least one of the following: water (H₂ O); hydrogen peroxide (H₂ O₂ ); oxygen (O₂ ); ozone (O₃ ); oxygen plasma; atomic oxygen (O); oxygen radical; or methyl alcohol (CH₃ OH).如申請專利範圍第2項之方法，其中該吹掃氣體包含以下中之至少一者：氮氣(N₂)及氬氣(Ar)。Such as the method of claim 2, wherein the purge gas includes at least one of the following: nitrogen (N₂ ) and argon (Ar).如申請專利範圍第5項之方法，其中該吹掃氣體包含以下中之至少一者：氮氣(N₂)及氬氣(Ar)。Such as the method of claim 5, wherein the purge gas includes at least one of the following: nitrogen (N₂ ) and argon (Ar).如申請專利範圍第1項之方法，其中重複進行該矽前驅體沉積步驟且重複進行該金屬前驅體沉積步驟直到該鑭金屬矽酸鹽膜達到所需厚度為止。Such as the method of the first item in the scope of the patent application, wherein the silicon precursor deposition step is repeated and the metal precursor deposition step is repeated until the lanthanum metal silicate film reaches the desired thickness.如申請專利範圍第1項之方法，其中使用原子層沉積(ALD)製程進行該方法。Such as the method of the first item in the scope of patent application, in which the atomic layer deposition (ALD) process is used to carry out the method.如申請專利範圍第1項之方法，其中該X與Y之比的範圍介於10：1與20：1之間。Such as the method of item 1 in the scope of patent application, wherein the range of the ratio of X to Y is between 10:1 and 20:1.如申請專利範圍第1項之方法，其中所形成之該鑭金屬矽酸鹽膜包含小於約5原子%之氫雜質。Such as the method of claim 1, wherein the formed lanthanum metal silicate film contains less than about 5 atomic% of hydrogen impurities.如申請專利範圍第1項之方法，其中所形成之該鑭金屬矽酸鹽膜包含小於約10原子%之碳雜質。Such as the method of claim 1, wherein the formed lanthanum metal silicate film contains less than about 10 atomic% of carbon impurities.如申請專利範圍第1項之方法，其中所形成之該鑭金屬矽酸鹽膜包含小於約10原子%之氮雜質。Such as the method of claim 1, wherein the formed lanthanum metal silicate film contains less than about 10 atomic% of nitrogen impurities.如申請專利範圍第1項之方法，其中該金屬前驅體包含脒基前驅體。Such as the method of item 1 in the scope of the patent application, wherein the metal precursor comprises an amidine-based precursor.如申請專利範圍第1項之方法，其中該鑭金屬矽酸鹽膜在100℃至450℃之反應溫度下形成。Such as the method of item 1 in the scope of the patent application, wherein the lanthanum metal silicate film is formed at a reaction temperature of 100°C to 450°C.如申請專利範圍第1項之方法，其中該鑭金屬矽酸鹽膜中之矽積體化程度視該X與Y之比而定。Such as the method of item 1 in the scope of patent application, wherein the degree of silicon integration in the lanthanum metal silicate film depends on the ratio of X to Y.如申請專利範圍第1項之方法，其中該基板包含以下中之至少一者：矽基板、經矽覆蓋之鍺基板、Ge基板、SiGe基板或III-V半導體基板。Such as the method of claim 1, wherein the substrate includes at least one of the following: a silicon substrate, a silicon-covered germanium substrate, a Ge substrate, a SiGe substrate, or a III-V semiconductor substrate.一種形成過渡金屬矽酸鹽膜之方法，該方法包含以下步驟：在反應室中提供用於加工之基板；在該基板上進行矽前驅體沉積，進行該矽前驅體沉積包含：脈衝矽前驅體，其中該矽前驅體包含以下中之至少一者：鹵化矽及基於胺基之前驅體；用吹掃氣體自該反應室吹掃該矽前驅體；脈衝氧化前驅體；及用該吹掃氣體自該反應室吹掃該氧化前驅體；在該基板上進行金屬前驅體沉積，進行該金屬前驅體沉積包含：脈衝金屬前驅體；用吹掃氣體自該反應室吹掃該金屬前驅體；脈衝該氧化前驅體或另一氧化前驅體；及用該吹掃氣體自該反應室吹掃該氧化前驅體或該另一氧化前驅體；其中該矽前驅體沉積步驟重複X次；其中該金屬前驅體沉積步驟重複Y次；且其中形成過渡金屬矽酸鹽膜；其中該金屬前驅體包含鍵結至氮原子或碳原子之金屬原子，及其中該金屬前驅體包含以下中之至少一者：基於脒基之前驅體，其選自由甲脒鑭(La(FAMD)₃)、參(N,N'-二異丙基乙脒基)鑭(La(iPrAMD)₃)及參(N,N'-二異丙基乙脒基)釔(TDIPAY)組成之群；基於環戊二烯基(Cp)之前驅體，其選自參(異丙基-環戊二烯基)鑭(La(iPrCp)₃)、參(乙基環戊二烯基)釔(Y(EtCp)₃)及參(甲基環戊二烯基)釔(Y(MeCp)₃)組成之群；參(雙三甲基矽烷基醯胺基)鑭(La[N(SiMe₃)₂]₃)；基於二酮之前驅體，其選自La(THD)₃、Y(THD)₃及參(2,2,6,6-四甲基-3,5-辛二酮基)釔(Y(tmod)₃)組成之群；及參[N,N-雙(三甲基矽烷基)醯胺]釔，及其中X與Y之比的範圍介於10：1與20：1之間。A method for forming a transition metal silicate film. The method includes the following steps: providing a substrate for processing in a reaction chamber; depositing a silicon precursor on the substrate, and depositing the silicon precursor includes: pulsed silicon precursor , Wherein the silicon precursor includes at least one of the following: silicon halide and an amine-based precursor; purging the silicon precursor from the reaction chamber with a purge gas; pulse oxidizing the precursor; and using the purge gas Purging the oxidation precursor from the reaction chamber; depositing a metal precursor on the substrate, and depositing the metal precursor includes: pulsing the metal precursor; purging the metal precursor from the reaction chamber with a purge gas; pulsing The oxidation precursor or another oxidation precursor; and purging the oxidation precursor or the another oxidation precursor from the reaction chamber with the purge gas; wherein the silicon precursor deposition step is repeated X times; wherein the metal precursor The bulk deposition step is repeated Y times; and a transition metal silicate film is formed; wherein the metal precursor includes a metal atom bonded to a nitrogen atom or a carbon atom, and the metal precursor includes at least one of the following: Amidino precursor, which is selected from the group consisting of lanthanum formamidine (La(FAMD)₃ ), phen (N,N'-diisopropyl acetamidino) lanthanum (La(iPrAMD)₃ ) and phen (N,N' -Diisopropyl acetamidino) yttrium (TDIPAY) group; based on cyclopentadienyl (Cp) precursor, which is selected from ginseng (isopropyl-cyclopentadienyl) lanthanum (La(iPrCp) )₃ ), ginseng (ethylcyclopentadienyl) yttrium (Y(EtCp)₃ ) and ginseng (methylcyclopentadienyl) yttrium (Y(MeCp)₃ ) group; reference (bistrimethyl) La[N(SiMe₃ )₂ ]₃ ; based on diketone precursor, which is selected from La(THD)₃ , Y(THD)₃ and reference (2,2,6 ,6-Tetramethyl-3,5-octanedionyl)yttrium (Y(tmod)₃ ) group consisting of; and [N,N -bis(trimethylsilyl)amide]yttrium, and The range of the ratio of X to Y is between 10:1 and 20:1.如申請專利範圍第20項之方法，其中該矽前驅體至少包含該鹵化矽。For example, the method of claim 20, wherein the silicon precursor at least contains the silicon halide.如申請專利範圍第20項之方法，其中該金屬前驅體包含以下中之至少一者：參(N,N'-二異丙基乙脒基)鑭(La(iPrAMD)₃)’及參(雙三甲基矽烷基醯胺基)鑭(La[N(SiMe₃)₂]₃)。For example, the method of claim 20, wherein the metal precursor includes at least one of the following: reference (N,N'-diisopropylacetamidino) lanthanum (La(iPrAMD)₃ )'and reference ( Bistrimethylsilylamino)lanthanum (La[N(SiMe₃ )₂ ]₃ ).如申請專利範圍第20項之方法，其中該氧化前驅體包含以下中之至少一者：水(H₂O)；過氧化氫(H₂O₂)；氧氣(O₂)；臭氧(O₃)；氧氣電漿；原子氧(O)；氧自由基；或甲基醇(CH₃OH)。For example, the method of claim 20, wherein the oxidation precursor contains at least one of the following: water (H₂ O); hydrogen peroxide (H₂ O₂ ); oxygen (O₂ ); ozone (O₃₎ ); oxygen plasma; atomic oxygen (O); oxygen radical; or methyl alcohol (CH₃ OH).如申請專利範圍第20項之方法，其中該過渡金屬矽酸鹽膜在約100℃至450℃之反應溫度下形成。Such as the method of claim 20, wherein the transition metal silicate film is formed at a reaction temperature of about 100°C to 450°C.如申請專利範圍第20項之方法，其中該過渡金屬矽酸鹽膜中之矽積體化程度視該X與Y之比而定。Such as the method of item 20 in the scope of patent application, wherein the degree of silicon integration in the transition metal silicate film depends on the ratio of X to Y.如申請專利範圍第20項之方法，其中使用原子層沉積(ALD)製程進行該方法。Such as the method of item 20 in the scope of patent application, which uses an atomic layer deposition (ALD) process to proceedLine this method.如申請專利範圍第20項之方法，其中該吹掃氣體包含以下中之至少一者：氮氣(N₂)及氬氣(Ar)。Such as the method of claim 20, wherein the purge gas includes at least one of the following: nitrogen (N₂ ) and argon (Ar).如申請專利範圍第20項之方法，其中額外形成氫氧化鑭膜。Such as the method of item 20 in the scope of the patent application, in which a lanthanum hydroxide film is additionally formed.如申請專利範圍第20項之方法，其中該基板包含以下中之至少一者：矽基板、經矽覆蓋之鍺基板、Ge基板、SiGe基板或III-V半導體基板。Such as the method of claim 20, wherein the substrate includes at least one of the following: a silicon substrate, a silicon-covered germanium substrate, a Ge substrate, a SiGe substrate, or a III-V semiconductor substrate.一種反應室，其中該反應室經組態以進行如申請專利範圍第20項之方法。A reaction chamber, in which the reaction chamber is configured to perform the method as claimed in item 20 of the scope of patent application.如申請專利範圍第1項或第20項之方法，其中該矽前驅體包含以下中之至少一者：雙(二烷胺基)矽烷；單(烷胺基)矽烷；或基於氧基矽烷之前驅體。For example, the method of item 1 or item 20 of the scope of patent application, wherein the silicon precursor contains at least one of the following: bis(dialkylamino)silane; mono(alkylamino)silane; or based on oxysilane Drive body.

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