TWI732373B - Gas flow control device and control method and semiconductor equipment using the device - Google Patents

Abstract

Translated fromChinese

一種氣體流量控制裝置和控制方法及應用該裝置的半導體設備，氣體流量控制裝置的一端透過管路連接氣體源，另一端透過管路連接半導體設備中的反應腔，用於將氣體源中的沉積氣體或蝕刻氣體通入反應腔中，並根據製程要求控制流入反應腔中的氣體流量的變化，氣體流量控制裝置包含至少兩個並聯設置的質量流量控制器(Mass Flow Controller，MFC)，控制第一MFC輸出第一流量的氣體，第二MFC輸出第二流量的氣體，其中第一流量大於10倍的第二流量，在多個調整步驟中逐步調整第二MFC輸出的第二流量，其中第二流量每一步的氣體流量最小調整量△小於等於第二最大額定流量的20%。本發明利用現有的硬體設備獲得了更好的氣體流量控制精度，最佳化了製程，提高了產品良率。A gas flow control device and a control method and a semiconductor device using the device. One end of the gas flow control device is connected to a gas source through a pipeline, and the other end is connected to a reaction chamber in a semiconductor device through a pipeline for depositing in the gas source The gas or etching gas is introduced into the reaction chamber, and the gas flow into the reaction chamber is controlled according to the process requirements. The gas flow control device includes at least two mass flow controllers (Mass Flow Controller, MFC) arranged in parallel to control the first One MFC outputs a first flow rate of gas, and a second MFC outputs a second flow rate of gas, where the first flow rate is greater than 10 times the second flow rate, and the second flow rate output by the second MFC is gradually adjusted in multiple adjustment steps. The minimum adjustment △ of the gas flow in each step of the second flow rate is less than or equal to 20% of the second maximum rated flow rate. The invention utilizes the existing hardware equipment to obtain better gas flow control accuracy, optimizes the manufacturing process, and improves the product yield.

Description

Translated fromChinese

氣體流量控制裝置和控制方法及應用該裝置的半導體設備Gas flow control device and control method and semiconductor device using the devicePrepare

本發明涉及半導體製造領域，尤其涉及一種氣體流量控制裝置和控制方法及應用該裝置的半導體設備。The present invention relates to the field of semiconductor manufacturing, in particular to a gas flow control device and control method and semiconductor equipment using the device.

半導體生產過程中的某些製程涉及氣體與半導體基片的反應，比如沉積製程和蝕刻製程，氣體的流量將對製程結果產生重要影響。為了使生產的半導體獲得較高的良率，必須對流入反應腔室的氣體流量進行精確控制，尤其是隨著半導體製程積體密度的不斷提高，對氣體流量的誤差要求也進一步提高。Certain processes in the semiconductor production process involve the reaction of gases and semiconductor substrates, such as deposition processes and etching processes. The flow rate of the gas will have an important impact on the process results. In order to obtain a higher yield of the produced semiconductors, the gas flow into the reaction chamber must be accurately controlled, especially as the density of the semiconductor manufacturing process continues to increase, the error requirements for the gas flow are further increased.

質量流量控制器(Mass Flow Controller，MFC)是一種用於對氣體流量進行精確測量和控制的器件，其不但具有質量流量計的功能，更重要的是能自動控制氣體流量，即用戶可根據需要進行流量設定，MFC自動地將流量恆定在設定值上，即使系統壓力有波動或環境溫度有變化，也不會使其偏離設定值。簡單地說，質量流量控制器就是一個穩流裝置，是一個可以手動設定或與電腦連接以自動控制的氣體穩流裝置。氣體質量流量單位一般以sccm(Standard Cubic Centimeter per Minute，每分鐘標準毫升)和slm(Standard Liter per Minute，每分鐘標準公升)來表示。這意味著這種儀錶在不同的使用條件下，指示的流量均是標準狀態下的流量。標準狀態規定為：氣壓：101325Pa(760mm Hg)；溫度：0℃(273.15K)。Mass Flow Controller (MFC) is a device used to accurately measure and control the gas flow. It not only has the function of a mass flow meter, but more importantly, it can automatically control the gas flow, that is, the user can according to needs For flow setting, MFC automatically keeps the flow constant at the set value, even if the system pressure fluctuates or the ambient temperature changes, it will not deviate from the set value. Simply put, a mass flow controller is a steady flow device, a gas steady flow device that can be set manually or connected to a computer for automatic control. The gas mass flow unit is generally expressed in sccm (Standard Cubic Centimeter per Minute, standard milliliters per minute) and slm (Standard Liter per Minute, standard liters per minute). This means that under different conditions of use, this instrumentThe indicated flow rate is the flow rate under the standard state. The standard conditions are: air pressure: 101325Pa (760mm Hg); temperature: 0°C (273.15K).

半導體設備基本上都會配備MFC來控制製程氣體流量，以滿足製程的要求。Semiconductor equipment is basically equipped with MFC to control the process gas flow to meet the requirements of the process.

假設MFC的最大額定流量為S，最小精確度為A，則MFC的氣體流量最小調整量T=S×A，而目前市場上的MFC的流量控制精度最高能夠達到當前流量的+/-0.5%，針對某些對氣體流量變化的精確度有較高要求的製程來說，這樣的精度是遠遠無法滿足要求的。例如：在某種製程中，氣體流量的初值為24sccm，需要氣體流量按照24.1sccm、24.2sccm、24.3sccm、…、24.9sccm的規律進行遞增變化，最終使氣體流量值達到25sccm，每次氣體流量都比前一次增加0.1sccm，針對這種情況，就算使用最大額定流量只有25sccm的MFC，如果要獲得0.1sccm的氣體流量最小調整量，那麼也至少需要精確度達到0.1/25=0.4%，而目前還沒有MFC的精度可以小於最大額定流量的0.5%。現有MFC硬體條件無法滿足在24sccm基礎流量上逐步增加0.1sccm的製程需求，MFC由於精度不夠導致的流量誤差(0.12)都已經大於需要的最小調整量(0.1)了，這勢必會降低了精度，增加了誤差，並影響製程結果。Assuming that the maximum rated flow of MFC is S and the minimum accuracy is A, the minimum adjustment amount of gas flow of MFC is T=S×A, and the current flow control accuracy of MFC on the market can reach up to +/-0.5% of the current flow. For some processes that have higher requirements for the accuracy of gas flow changes, such accuracy is far from meeting the requirements. For example: In a certain process, the initial value of the gas flow is 24 sccm, and the gas flow needs to be incrementally changed in accordance with the law of 24.1 sccm, 24.2 sccm, 24.3 sccm,..., 24.9 sccm, and finally the gas flow value reaches 25 sccm. The flow rate is increased by 0.1sccm compared to the previous time. In this case, even if you use an MFC with a maximum rated flow rate of only 25sccm, if you want to obtain the minimum adjustment of the gas flow rate of 0.1sccm, then the accuracy must be at least 0.1/25=0.4%. However, there is no MFC whose accuracy can be less than 0.5% of the maximum rated flow. The existing MFC hardware conditions cannot meet the process requirements of gradually increasing 0.1sccm on the base flow rate of 24sccm. The flow error (0.12) caused by MFC due to insufficient accuracy is already greater than the minimum adjustment amount (0.1) required, which will inevitably reduce the accuracy. , Increase the error and affect the process result.

本發明提供一種氣體流量控制裝置和控制方法及應用該裝置的半導體設備，利用現有的硬體設備獲得了更好的氣體流量控制精度，最佳化了製程，提高了產品良率。The invention provides a gas flow control device, a control method and a semiconductor device using the device, which utilizes existing hardware equipment to obtain better gas flow control accuracy, optimize the manufacturing process, and improve the product yield.

為了達到上述目的，本發明提供一種氣體流量控制裝置，該氣體流量控制裝置的一端透過管路連接氣體源，另一端透過管路連接半導體設備中的反應腔，用於將氣體源中的反應氣體通入反應腔中，並根據製程要求控制流入反應腔中的氣體流量的變化；氣體流量控制裝置包含：至少兩個並聯設置的質量流量控制器MFC，每一個MFC的進氣端都透過管路連接氣體源，每一個MFC的出氣端都透過管路連接反應腔；其中第一MFC具有第一最大額定流量，第二MFC具有第二最大額定流量，其中第一額定流量大於10倍的第二最大額定流量；控制第一MFC輸出第一流量的氣體，第二MFC輸出第二流量的氣體，其中第一流量大於10倍的第二流量；在多個調整步驟中逐步調整第二MFC輸出的第二流量，其中第二流量每一步的氣體流量最小調整量△小於等於第二最大額定流量的20%。In order to achieve the above objective, the present invention provides a gas flow control device. One end of the gas flow control device is connected to a gas source through a pipeline, and the other end is connected to a reaction chamber in a semiconductor device through a pipeline for removing the reaction gas in the gas source. Pass into the reaction chamber, and control the change of the gas flow into the reaction chamber according to the process requirements; the gas flow control device includes: at least two mass flow controllers MFC arranged in parallel, and the inlet end of each MFC passes through the pipeline Connect the gas source, the gas outlet of each MFC is connected to the reaction chamber through a pipeline; the first MFC has the first maximum rated flow, the second MFC has the second maximum rated flow, and the first rated flow is greater than 10 times the second Maximum rated flow; control the first MFC to output the first flow of gas, the second MFC to output the second flow of gas, where the first flow is greater than 10 times the second flow; gradually adjust the second MFC output in multiple adjustment steps The second flow rate, wherein the minimum adjustment amount Δ of the gas flow rate at each step of the second flow rate is less than or equal to 20% of the second maximum rated flow rate.

氣體流量控制裝置包含N個並聯設置的質量流量控制器MFC，當氣體流量最小調整量△的數值小於第一流量的1/10N時，調整第N個MFC來產生需要獲得的氣體流量最小調整量△，其中氣體流量最小調整量△大於第N個MFC可調流量的最小精確度，N>2。The gas flow control device includes N mass flow controllers MFCs arranged in parallel. When the value of the minimum gas flow adjustment △ is less than 1/10N of the first flow, the Nth MFC is adjusted to generate the required minimum gas flow adjustment. △, where the minimum adjustment of the gas flow △ is greater than the minimum accuracy of the Nth MFC adjustable flow, N>2.

在每一個MFC的進氣管路上設置一個進氣閥門，用於控制該路MFC的通斷，在所有MFC的總出氣管路上設置一個出氣閥門，用於控制氣體流量控制裝置通往反應腔的氣體的通斷。An inlet valve is set on the inlet pipe of each MFC to control the on and off of the MFC, and an outlet valve is set on the total outlet pipe of all MFCs to control the flow of the gas flow control device to the reaction chamber. The on-off of the gas.

本發明還提供一種利用氣體流量控制裝置進行氣體流量控制的方法，控制第一MFC輸出第一流量的氣體及第二MFC輸出第二流量的氣體，其中第一流量大於10倍的第二流量，在多個調整步驟中逐步調整第二MFC輸出的第二流量，其中第二流量每一步的氣體流量最小調整量△小於等於第二最大額定流量的20%。The present invention also provides a gas flow control method using a gas flow control device to control a first MFC to output a first flow of gas and a second MFC to output a second flow of gas, wherein the first flow is greater than 10 times the second flow, Adjust the output of the second MFC step by step in multiple adjustment stepsThe second flow rate, wherein the minimum adjustment amount Δ of the gas flow rate at each step of the second flow rate is less than or equal to 20% of the second maximum rated flow rate.

當氣體流量最小調整量△的數值小於第一流量的1/10N時，調整第N個MFC來產生需要獲得的氣體流量最小調整量△，其中氣體流量最小調整量△大於第N個MFC可調流量的最小精確度，N>2。When the value of the minimum gas flow adjustment △ is less than 1/10N of the first flow rate, adjust the Nth MFC to generate the required minimum gas flow adjustment △, where the minimum gas flow adjustment △ is greater than the Nth MFC adjustable The minimum accuracy of the flow, N>2.

透過設置在每一個MFC的進氣管路上的進氣閥門控制該路MFC的通斷，將被選擇的MFC的進氣閥門開啟，將未被選擇的MFC的進氣閥門關閉。Through the intake valve set on the intake pipe of each MFC, the on and off of the MFC is controlled, the intake valve of the selected MFC is opened, and the intake valve of the unselected MFC is closed.

本發明還提供一種半導體設備，包含：反應腔以及與反應腔透過管路連接的氣體供應裝置，該氣體供應裝置為反應腔提供反應氣體，該反應腔用於處理半導體基片；氣體供應裝置包含：氣體源，其用於儲存處理製程所需的反應氣體。本發明利用現有的硬體設備獲得了更好的氣體流量控制精度，最佳化了製程，提高了產品良率。The present invention also provides a semiconductor device, comprising: a reaction chamber and a gas supply device connected with the reaction chamber through a pipeline, the gas supply device provides reaction gas for the reaction chamber, the reaction chamber is used for processing semiconductor substrates; the gas supply device includes : Gas source, which is used to store the reaction gas required for the processing process. The invention utilizes the existing hardware equipment to obtain better gas flow control accuracy, optimizes the manufacturing process, and improves the product yield.

1:氣體流量控制裝置1: Gas flow control device

2:氣體源2: gas source

3:反應腔3: Reaction chamber

101:質量流量控制器MFC101: Mass flow controller MFC

102:進氣閥門102: intake valve

103:出氣閥門103: Outlet valve

第1圖是本發明提供的一種應用了氣體流量控制裝置的半導體設備的示意圖。Figure 1 is a schematic diagram of a semiconductor device using a gas flow control device provided by the present invention.

第2圖是本發明的一個實施例的示意圖。Figure 2 is a schematic diagram of an embodiment of the present invention.

第3圖是本發明的另一個實施例的示意圖。Figure 3 is a schematic diagram of another embodiment of the present invention.

以下根據第1圖至第3圖，具體說明本發明的較佳實施例。Hereinafter, the preferred embodiment of the present invention will be described in detail based on Figures 1 to 3.

本發明提供一種半導體設備，該半導體設備用於實現氣體與半導體基片的反應，該半導體設備尤其應用在蝕刻製程和/或沉積製程中。The present invention provides a semiconductor device, which is used for realizing the reaction between gas and a semiconductor substrate. The semiconductor device is especially used in an etching process and/or a deposition process.

蝕刻製程可以是電漿蝕刻製程，其作為一種常用的晶圓蝕刻製程，以適當的氣體作為蝕刻氣體，透過能量源，例如高頻容性耦合RF發生器或者高頻感性耦合RF發生器激發蝕刻氣體形成電漿，然後用電漿蝕刻沒有光掩膜的區域，即可在晶圓中形成所需要的圖形。The etching process can be a plasma etching process. As a commonly used wafer etching process, an appropriate gas is used as the etching gas, and an energy source, such as a high-frequency capacitive coupling RF generator or a high-frequency inductive coupling RF generator, is used to excite the etching gas to form Plasma is then used to etch the area without a photomask to form the desired pattern on the wafer.

蝕刻製程還可以是採用乾式蝕刻製程或用Bosch蝕刻方法進行穿透矽通孔TSV蝕刻。The etching process can also be a dry etching process or a Bosch etching method for TSV etching through silicon vias.

沉積製程可以是化學氣相沉積(Chemical vapor deposition，簡稱CVD)是反應物質在氣態條件下發生化學反應，生成固態物質沉積在加熱的固態基體表面，進而製得固體材料的製程，具體地，透過進氣裝置將反應氣體通入反應腔中，並控制反應腔的氣壓、溫度等反應條件，使得反應氣體發生反應，從而完成沉積製程步驟。The deposition process can be a chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a process in which reactant substances undergo a chemical reaction under gaseous conditions to produce solid substances that are deposited on the surface of a heated solid substrate to obtain solid materials. Specifically, through The gas inlet device passes the reaction gas into the reaction chamber, and controls the reaction conditions such as the pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process steps.

沉積製程還可以是金屬有機化學氣相沉積(Metal Organic Chemical Vapor Deposition，MOCVD)主要用於III-V族化合物、II-VI族化合物或合金的薄層單晶功能結構材料的製備，例如，氮化鎵、砷化鎵、磷化銦、氧化鋅等。金屬有機化學氣相沉積一般以II族或III族金屬有機源、以及VI族或V族氫化物源作為反應氣體，用氫氣或氮氣作為載氣，以熱分解反應方式在基片上進行氣相外延生長，從而生長各種II-VI化合物半導體、III-V族化合物半導體、以及它們的多元固溶體的薄層單晶材料。The deposition process can also be Metal Organic Chemical Vapor Deposition (MOCVD), which is mainly used for the preparation of thin-layer single-crystal functional structural materials of III-V compounds, II-VI compounds or alloys, for example, nitrogen Gallium, gallium arsenide, indium phosphide, zinc oxide, etc. Metal-organic chemical vapor deposition generally uses group II or group III metal organic sources, and group VI or group V hydride sources as reaction gases, and uses hydrogen or nitrogen as carrier gas to perform vapor phase epitaxy on the substrate by thermal decomposition reaction. Growth, thereby growing various II-VI compound semiconductors, III-V group compound semiconductors, and thin-layer single crystal materials of their multiple solid solutions.

如第1圖所示，本發明提供的一種半導體設備包含：反應腔3以及與反應腔3透過管路連接的氣體供應裝置，該氣體供應裝置為反應腔3提供沉積製程所需的沉積氣體，或蝕刻製程所需的蝕刻氣體，該反應腔3用於實現沉積氣體或蝕刻氣體與半導體基片的反應。As shown in Figure 1, a semiconductor device provided by the present invention includes areaction chamber 3 and a gas supply device connected to thereaction chamber 3 through a pipeline, and the gas supply device provides thereaction chamber 3 with deposition gas required for the deposition process. Or the etching gas required for the etching process, thereaction chamber 3 is used to realize the reaction between the deposition gas or the etching gas and the semiconductor substrate.

氣體供應裝置包含：氣體源2，其用於儲存沉積製程所需的沉積氣體，或用於儲存蝕刻製程所需的蝕刻氣體；氣體流量控制裝置1，其透過管路連接氣體源2和反應腔3，用於將氣體源2中的沉積氣體或蝕刻氣體通入反應腔3中，並可根據製程要求控制氣體流量的變化。The gas supply device includes: agas source 2, which is used to store the deposition gas required for the deposition process, or the etching gas required for the etching process; a gasflow control device 1, which connects thegas source 2 and the reaction chamber through apipeline 3. It is used to pass the deposition gas or etching gas in thegas source 2 into thereaction chamber 3, and the gas flow rate can be controlled according to the requirements of the manufacturing process.

氣體流量控制裝置1進一步包含：多個並聯設置的質量流量控制器MFC101，每一個MFC的進氣端都透過管路連接氣體源2，出氣端都透過管路連接反應腔3。透過對不同MFC的最大額定流量和最小精確度進行選擇和設置，使得所有MFC的總氣體流量變化率可以滿足製程的要求。The gasflow control device 1 further includes: a plurality of mass flow controllers MFC101 arranged in parallel, the inlet end of each MFC is connected to thegas source 2 through a pipe, and the gas outlet end is connected to thereaction chamber 3 through the pipe. By selecting and setting the maximum rated flow and minimum accuracy of different MFCs, the total gas flow rate of change of all MFCs can meet the requirements of the process.

較佳地，在每一個MFC的進氣管路上都可以設置一個進氣閥門102，用於控制該路MFC的通斷，在所有MFC的總出氣管路上設置一個出氣閥門103，用於控制氣體流量控制裝置1通往反應腔3的氣體的通斷。Preferably, aninlet valve 102 can be provided on the inlet pipe of each MFC to control the on and off of the MFC, and anoutlet valve 103 is provided on the total outlet pipe of all MFCs to control the gas. Theflow control device 1 turns on and off the gas to thereaction chamber 3.

第一MFC具有第一最大額定流量，第二MFC具有第二最大額定流量，其中第一額定流量大於10倍的第二最大額定流量，控制第一MFC輸出第一流量的氣體，第二MFC輸出第二流量的氣體，其中第一流量大於10倍的第二流量，在多個調整步驟中逐步調整第二MFC輸出的第二流量，其中第二流量每一步的氣體流量最小調整量△小於等於第二最大額定流量的20%。The first MFC has a first maximum rated flow rate, and the second MFC has a second maximum rated flow rate, where the first rated flow rate is greater than 10 times the second maximum rated flow rate, and controls the first MFC to output the first flow of gas, and the second MFC to output The second flow rate of gas, where the first flow rate is greater than 10 times the second flow rate, the second flow rate output by the second MFC is gradually adjusted in multiple adjustment steps, wherein the minimum adjustment amount of the gas flow rate at each step of the second flow rate is less than or equal to 20% of the second maximum rated flow.

當氣體流量最小調整量△的數值小於第一流量的1/10N時，調整第N個MFC來產生需要獲得的氣體流量最小調整量△，其中氣體流量最小調整量△大於第N個MFC可調流量的最小精確度，N>2。When the value of the minimum gas flow adjustment △ is less than 1/10N of the first flow rate, adjust the Nth MFC to generate the required minimum gas flow adjustment △, where the minimum gas flow adjustment △ is greater than the Nth MFC adjustable The minimum accuracy of the flow, N>2.

更具體地說，假設氣體流量的初值為I，需要獲得的氣體流量最小調整量為△，氣體流量的終值為F，氣體流量最小調整量△的數值可以是小數點後第一位(即十分位)，也可以是小數點後第二位(百分位)，或者是小數點後第三位(千分位)，甚至可以達到小數點後第N位(N為自然數)。則相應地，氣體流量控制裝置1中可以包含N個並聯設置的MFC101，其中，第一MFC用於獲得所需要的氣體流量的初值I，可以將該第一MFC的氣體流量數值固定設置在其量程範圍內的某一數值，該數值等於初值I；而其餘的MFC則用於產生需要獲得的氣體流量最小調整量△，從而使得氣體流量控制裝置1的總體氣體流量以氣體流量最小調整量△為間隔從氣體流量初值I變化至氣體流量終值F。More specifically, assuming that the initial value of the gas flow is I, the minimum adjustment of the gas flow that needs to be obtained is △, the final value of the gas flow is F, and the value of the minimum adjustment of the gas flow △ can be the first decimal place ( It can be the second decimal place (percentile), or the third decimal place (thousandth place), or even the Nth decimal place (N is a natural number). Accordingly, the gasflow control device 1 may includeN MFCs 101 arranged in parallel, where the first MFC is used forTo obtain the initial value I of the required gas flow rate, the gas flow rate value of the first MFC can be fixedly set at a certain value within its range, which is equal to the initial value I; while the remaining MFCs are used to generate The gas flow minimum adjustment amount △, so that the overall gas flow of the gasflow control device 1 changes from the initial gas flow value I to the final gas flow value F at intervals of the minimum gas flow adjustment △.

進一步來說，當氣體流量最小調整量△的數值是小數點後第一位時，採用第二MFC來產生需要獲得的氣體流量最小調整量△，此時的第二MFC的氣體流量最小調整量T2=第二MFC的最大額定流量值S2×第二MFC的最小精確度A2，且需要獲得的氣體流量最小調整量△是第二MFC的氣體流量最小調整量T2的整數倍，第二MFC的最大額定流量值S2

數值D，其中，數值D=｜氣體流量終值F-氣體流量初值I｜，即數值D是氣體流量終值F與氣體流量初值I之間的差的絕對值；當氣體流量最小調整量△的數值是小數點後第二位時，採用第三MFC來產生需要獲得的氣體流量最小調整量△，此時的第三MFC的氣體流量最小調整量T3=第三MFC的最大額定流量值S3×第三MFC的最小精確度A3，且需要獲得的氣體流量最小調整量△是第三MFC的氣體流量最小調整量T3的整數倍，第三MFC的最大額定流量值S3

｜氣體流量終值F-氣體流量初值I｜；以此類推，當氣體流量最小調整量△的數值是小數點後第(N-1)位時，採用第N MFC來產生需要獲得的氣體流量最小調整量△，此時的第N MFC的氣體流量最小調整量TN=第N MFC的最大額定流量值SN×第N MFC的最小精確度AN，且需要獲得的氣體流量最小調整量△是第N MFC的氣體流量最小調整量TN的整數倍，第N MFC的最大額定流量值SN

｜氣體流量終值F-氣體流量初值I｜。Furthermore, when the value of the minimum gas flow adjustment △ is the first digit after the decimal point, the second MFC is used to generate the minimum gas flow adjustment △ that needs to be obtained. At this time, the gas flow minimum adjustment of the second MFC is T2=the maximum rated flow value of the second MFC S2×the minimum accuracy of the second MFC A2, and the minimum adjustment of the gas flow that needs to be obtained is an integer multiple of the minimum adjustment of the second MFC's gas flow T2. Maximum rated flow value S2

Value D, where value D=|final value of gas flow F-initial value of gas flow I|, that is, value D is the absolute value of the difference between the final value of gas flow F and the initial value of gas flow I; when the gas flow is the smallest adjustment When the value of △ is the second digit after the decimal point, the third MFC is used to generate the minimum gas flow adjustment △ that needs to be obtained. At this time, the minimum gas flow adjustment of the third MFC T3 = the maximum rated flow of the third MFC The value S3×the minimum accuracy of the third MFC A3, and the minimum adjustment of the gas flow that needs to be obtained is an integer multiple of the minimum adjustment of the third MFC's gas flow T3, and the maximum rated flow value of the third MFC S3

｜Final value of gas flow rate F-initial value of gas flow rate I｜; and so on, when the value of the minimum gas flow adjustment △ is (N-1) after the decimal point, the Nth MFC is used to generate the gas that needs to be obtained The minimum adjustment amount of flow rate △, the minimum adjustment amount of gas flow rate of the Nth MFC at this time TN = the maximum rated flow value SN of the Nth MFC × the minimum accuracy AN of the Nth MFC, and the minimum adjustment amount of the gas flow rate that needs to be obtained is The N-th MFC's minimum gas flow rate adjustment is an integral multiple of TN, and the N-th MFC's maximum rated flow value SN

|Final value of gas flow F-initial value of gas flow I|.

如第2圖所示，在本發明的一個實施例中，需要氣體流量從24sccm到25sccm逐漸遞增，按照24.1sccm、24.2sccm、24.3sccm、…、24.9sccm的規律進行遞增變化，每次氣體流量都比前一次增加0.1sccm。因為需要獲得的氣體流量變化數值僅僅達到小數點後一位，因此氣體流量控制裝置1中可以簡單透過採用兩個MFC來實現需要獲得的氣體流量變化數值，針對含有N個MFC的裝置，僅僅開啟第一MFC和第二MFC進氣管路上的進氣閥門102，其他MFC的進氣管路上的進氣閥門102保持關閉，更簡單的方式，氣體流量控制裝置1可以僅僅包含兩個並聯的MFC。第一MFC的最大額定流量可以採用30sccm~100sccm，最小精確度為最大額定流量的+/-0.5%，開啟第一MFC的進氣管路上的進氣閥門102，將第一MFC的氣體流量調節為24sccm，則第一MFC在整個流程中固定提供24sccm流量的氣體，可以獲得十分精確的校正值。第二MFC的最大額定流量可以採用20sccm，最小精確度為最大額定流量的+/-0.5%，則第二MFC的氣體流量最小調整量為0.1sccm，開啟第二MFC的進氣管路上的進氣閥門102，再開啟出氣管路上的出氣閥門103，根據規定的時間，從0sccm流量開始，以最小變化量0.1sccm為數值間隔，依次遞增調節第二MFC的氣體流量，使第二MFC的氣體流量變化值按照0.1sccm、0.2sccm、0.3sccm、…、0.9sccm、1sccm的規律進行遞增變化，第一MFC和第二MFC的氣體流量組合起來，最終獲得了需要獲得的氣體流量變化數值。As shown in Figure 2, in an embodiment of the present invention, the gas flow rate is gradually increased from 24 sccm to 25 sccm, and the gas flow rate is increased according to the law of 24.1 sccm, 24.2 sccm, 24.3 sccm, ..., 24.9 sccm. Both are 0.1sccm more than the previous time. Because the change value of the gas flow rate that needs to be obtained only reaches one decimal place, the gasflow control device 1 can simply pass throughTwo MFCs are used to achieve the required gas flow change value. For a device containing N MFCs, only theintake valve 102 on the first MFC and the second MFC intake pipe is opened, and the intake pipes on the other MFCs Thegas valve 102 is kept closed. In a simpler way, the gasflow control device 1 may only include two MFCs connected in parallel. The maximum rated flow of the first MFC can be 30sccm~100sccm, and the minimum accuracy is +/-0.5% of the maximum rated flow. Open theintake valve 102 on the intake pipe of the first MFC to adjust the gas flow of the first MFC. If the value is 24 sccm, the first MFC provides a fixed flow of 24 sccm gas in the entire process, and a very accurate correction value can be obtained. The maximum rated flow of the second MFC can be 20 sccm, and the minimum accuracy is +/-0.5% of the maximum rated flow. The minimum adjustment of the gas flow of the second MFC is 0.1 sccm. Turn on the inlet pipe of the second MFC. Thegas valve 102, and then open thegas outlet valve 103 on the gas outlet pipe. According to the specified time, starting from the flow rate of 0 sccm, with the minimum change of 0.1 sccm as the numerical interval, the gas flow rate of the second MFC is adjusted incrementally to make the gas flow of the second MFC The flow rate change value changes incrementally according to the rule of 0.1 sccm, 0.2 sccm, 0.3 sccm,..., 0.9 sccm, 1 sccm, and the gas flow rates of the first MFC and the second MFC are combined to finally obtain the desired gas flow rate change value.

更有效的方式，保持第一MFC的最大額定流量和最小精確度不變，第二MFC的最大額定流量可以採用1sccm，最小精確度為最大額定流量的+/-0.5%，則第二MFC的氣體流量最小調整量為0.005sccm，標定的更加精確。根據規定的時間，從0sccm流量開始，以變化量0.1sccm為數值間隔，依次遞增調節第二MFC的氣體流量，使第二MFC的氣體流量變化值按照0.1sccm、0.2sccm、0.3sccm、…、0.9sccm、1sccm的規律進行遞增變化。最終同樣獲得了需要獲得的氣體流量變化數值。A more effective way is to keep the maximum rated flow rate and minimum accuracy of the first MFC unchanged. The maximum rated flow rate of the second MFC can be 1sccm, and the minimum accuracy is +/-0.5% of the maximum rated flow rate. The minimum adjustment amount of gas flow is 0.005sccm, which makes the calibration more accurate. According to the specified time, starting from the flow rate of 0sccm, with the change amount of 0.1sccm as the numerical interval, the gas flow rate of the second MFC is adjusted incrementally, so that the gas flow rate of the second MFC changes according to 0.1sccm, 0.2sccm, 0.3sccm,..., The rule of 0.9sccm and 1sccm changes incrementally. Finally, the required gas flow rate change value is also obtained.

如第3圖所示，在本發明的另一個實施例中，需要氣體流量從38sccm到40sccm逐漸遞增，按照38.05sccm、38.10sccm、38.15sccm、…、39.90sccm、39.95sccm的規律進行遞增變化，每次氣體流量都比前一次增加0.05sccm。因為需要獲得的氣體流量變化數值達到了小數點後兩位，因此氣體流量控制裝置1中需要利用第三MFC來控制需要獲得的氣體流量變化數值中的小數點後第二位數值的流量。為了擴大適用範圍，仍然採用含有N個MFC的氣體流量控制裝置1來實現本實施例中的氣體流量控制，利用第一MFC和第三MFC的組合來實現具體的氣體流量控制過程，因此保持除了第一MFC和第三MFC之外的其他MFC的進氣管路上的進氣閥門102處於關閉狀態。第一MFC的最大額定流量可以採用30sccm~100sccm，最小精確度為最大額定流量的+/-0.5%，開啟第一MFC的進氣管路上的進氣閥門102，將第一MFC的氣體流量調節為38sccm，則第一MFC在整個流程中固定提供38sccm流量的氣體，可以獲得十分精確的校正值。第三MFC的最大額定流量可以採用10sccm，最小精確度為最大額定流量的+/-0.5%，則第三MFC的氣體流量最小調整量為0.05sccm，開啟第三MFC的進氣管路上的進氣閥門102，再開啟出氣管路上的出氣閥門103，根據規定的時間，從0sccm流量開始，以最小變化量0.05sccm為數值間隔，依次遞增調節第三MFC的氣體流量，使第三MFC的氣體流量變化值按照0.05sccm、0.1sccm、0.15sccm、…、1.90sccm、1.95sccm、2sccm的規律進行遞增變化，第一MFC和第二MFC的氣體流量組合起來，最終獲得了需要獲得的氣體流量變化數值。As shown in Figure 3, in another embodiment of the present invention, the gas flow rate is required to gradually increase from 38 sccm to 40 sccm, and to change incrementally according to the law of 38.05 sccm, 38.10 sccm, 38.15 sccm, ..., 39.90 sccm, 39.95 sccm, Each time the gas flow rate is increased by 0.05 compared to the previous timesccm. Because the gas flow rate change value that needs to be obtained reaches two decimal places, the gasflow control device 1 needs to use a third MFC to control the flow rate of the gas flow rate change value that needs to be obtained after the decimal point. In order to expand the scope of application, the gasflow control device 1 containing N MFCs is still used to realize the gas flow control in this embodiment, and the combination of the first MFC and the third MFC is used to realize the specific gas flow control process, so the addition of Theintake valves 102 on the intake pipes of MFCs other than the first MFC and the third MFC are in a closed state. The maximum rated flow of the first MFC can be 30sccm~100sccm, and the minimum accuracy is +/-0.5% of the maximum rated flow. Open theintake valve 102 on the intake pipe of the first MFC to adjust the gas flow of the first MFC. If it is 38sccm, the first MFC provides a fixed flow of gas of 38sccm throughout the process, and a very accurate correction value can be obtained. The maximum rated flow of the third MFC can be 10 sccm, and the minimum accuracy is +/-0.5% of the maximum rated flow. The minimum adjustment of the gas flow of the third MFC is 0.05 sccm. Turn on the inlet pipe of the third MFC. Thegas valve 102, and then open thegas outlet valve 103 on the gas outlet pipe, according to the specified time, starting from the flow rate of 0 sccm, with the minimum change amount of 0.05 sccm as the numerical interval, the gas flow rate of the third MFC is adjusted incrementally to make the gas flow of the third MFC The flow rate change value is incrementally changed according to the law of 0.05sccm, 0.1sccm, 0.15sccm,..., 1.90sccm, 1.95sccm, 2sccm. The gas flow rate of the first MFC and the second MFC are combined to finally obtain the required gas flow change Numerical value.

在本發明的另一個實施例中，僅僅需要氣體流量從35sccm到20sccm逐漸遞減，每次氣體流量都比前一次減少1sccm。因為需要獲得的氣體流量變化數值僅僅涉及整數位，因此可以簡單地利用一個MFC就達到要求。選擇第一MFC的最大額定流量為100sccm或200sccm，最小精確度為最大額定流量的+/-0.5%，即可以獲得需要獲得的氣體流量變化數值。In another embodiment of the present invention, the gas flow rate is only required to gradually decrease from 35 sccm to 20 sccm, and each time the gas flow rate is reduced by 1 sccm from the previous time. Because the value of the gas flow change that needs to be obtained only involves integer bits, it can be achieved by simply using an MFC. Select the maximum rated flow rate of the first MFC as 100sccm or 200sccm, and the minimum accuracy is +/-0.5% of the maximum rated flow rate, that is, the required gas flow rate change value can be obtained.

本發明利用現有的硬體設備獲得了更好的氣體流量控制精度，最佳化了製程，提高了產品良率。The invention utilizes the existing hardware equipment to obtain better gas flow control accuracy, optimizes the manufacturing process, and improves the product yield.

儘管本發明的內容已經透過上述較佳的實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be obvious after reading the above content by those with ordinary knowledge in the field. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

1:氣體流量控制裝置1: Gas flow control device

2:氣體源2: gas source

3:反應腔3: Reaction chamber

101:質量流量控制器MFC101: Mass flow controller MFC

102:進氣閥門102: intake valve

103:出氣閥門103: Outlet valve

Claims (7)

Translated fromChinese

一種氣體流量控制裝置，其中該氣體流量控制裝置的一端透過管路連接一氣體源，另一端透過管路連接半導體設備中的一反應腔，用於將該氣體源中的反應氣體通入該反應腔中，並根據製程要求控制流入該反應腔中的氣體流量的變化；該氣體流量控制裝置包含：至少兩個並聯設置的一質量流量控制器，每一個該質量流量控制器的進氣端都透過管路連接該氣體源，每一個該質量流量控制器的出氣端都透過管路連接該反應腔；其中一第一質量流量控制器具有一第一最大額定流量，一第二質量流量控制器具有一第二最大額定流量，其中該第一最大額定流量大於10倍的該第二最大額定流量；控制該第一質量流量控制器輸出一第一流量的氣體，該第二質量流量控制器輸出一第二流量的氣體，其中該第一流量大於10倍的該第二流量；在多個調整步驟中逐步調整該第二質量流量控制器輸出的該第二流量，其中該第二流量每一步的一氣體流量最小調整量△小於等於該第二最大額定流量的20%。A gas flow control device, wherein one end of the gas flow control device is connected to a gas source through a pipeline, and the other end is connected to a reaction chamber in a semiconductor device through a pipeline for passing the reaction gas in the gas source into the reaction The gas flow into the reaction chamber is controlled according to the process requirements; the gas flow control device includes: at least two mass flow controllers arranged in parallel, each of which has an inlet end The gas source is connected through a pipeline, and the gas outlet of each mass flow controller is connected to the reaction chamber through a pipeline; a first mass flow controller has a first maximum rated flow, and a second mass flow controller has a The second maximum rated flow rate, wherein the first maximum rated flow rate is greater than 10 times the second maximum rated flow rate; the first mass flow controller is controlled to output a first flow of gas, and the second mass flow controller outputs a first Two flow rates of gas, where the first flow rate is greater than 10 times the second flow rate; the second flow rate output by the second mass flow controller is gradually adjusted in a plurality of adjustment steps, wherein the second flow rate is one step per step The minimum gas flow rate adjustment △ is less than or equal to 20% of the second maximum rated flow rate.如申請專利範圍第1項所述的氣體流量控制裝置，其中該氣體流量控制裝置包含N個並聯設置的該質量流量控制器，當該氣體流量最小調整量△的數值小於該第一流量的1/10N時，調整第N個該質量流量控制器來產生需要獲得的該氣體流量最小調整量△，其中該氣體流量最小調整量△大於第N個該質量流量控制器可調流量的最小精確度，N>2。The gas flow control device described in item 1 of the scope of patent application, wherein the gas flow control device includes N mass flow controllers arranged in parallel, and when the value of the minimum adjustment △ of the gas flow is less than 1 of the first flow /10N, adjust the Nth mass flow controller to generate the minimum adjustment △ of the gas flow that needs to be obtained, where the minimum adjustment △ of the gas flow is greater than the Nth mass flowThe minimum accuracy of the adjustable flow rate of the flow rate controller, N>2.如申請專利範圍第1項所述的氣體流量控制裝置，其中在每一個該質量流量控制器的進氣管路上設置一進氣閥門，用於控制此路該質量流量控制器的通斷，在所有該質量流量控制器的總出氣管路上設置一出氣閥門，用於控制該氣體流量控制裝置通往該反應腔的氣體的通斷。In the gas flow control device described in item 1 of the scope of patent application, an intake valve is provided on each intake pipe of the mass flow controller to control the on and off of the mass flow controller in this path. A gas outlet valve is arranged on the total gas outlet pipeline of all the mass flow controllers, which is used to control the on-off of the gas from the gas flow control device to the reaction chamber.一種利用如申請專利範圍第1項至第3項中任意一項所述的氣體流量控制裝置進行的氣體流量控制方法，其中控制該第一質量流量控制器輸出該第一流量的氣體，該第二質量流量控制器輸出該第二流量的氣體，其中該第一流量大於10倍的該第二流量，在多個調整步驟中逐步調整該第二質量流量控制器輸出的該第二流量，其中該第二流量每一步的一氣體流量最小調整量△小於等於該第二最大額定流量的20%。A gas flow control method using the gas flow control device according to any one of items 1 to 3 in the scope of the patent application, wherein the first mass flow controller is controlled to output the gas at the first flow rate, and the first mass flow controller is controlled to output the gas at the first flow rate. The second mass flow controller outputs the second flow rate of gas, wherein the first flow rate is greater than 10 times the second flow rate, and the second flow rate output by the second mass flow controller is gradually adjusted in a plurality of adjustment steps, wherein The minimum adjustment amount Δ of a gas flow rate at each step of the second flow rate is less than or equal to 20% of the second maximum rated flow rate.如申請專利範圍第4項所述的氣體流量控制方法，其中當該氣體流量最小調整量△的數值小於該第一流量的1/10N時，調整第N個該質量流量控制器來產生需要獲得的該氣體流量最小調整量△，其中該氣體流量最小調整量△大於第N個該質量流量控制器可調流量的最小精確度，N>2。For the gas flow control method described in item 4 of the scope of patent application, when the value of the minimum adjustment △ of the gas flow is less than 1/10N of the first flow, the Nth mass flow controller is adjusted to generate the The minimum adjustment amount of the gas flow rate △, wherein the minimum adjustment amount △ of the gas flow rate is greater than the minimum accuracy of the Nth adjustable flow rate of the mass flow controller, N>2.如申請專利範圍第4項所述的氣體流量控制方法，其中透過設置在每一個該質量流量控制器的進氣管路上的該進氣閥門控制此路該質量流量控制器的通斷，將被選擇的該質量流量控制器的該進氣閥門開啟，將未被選擇的該質量流量控制器的該進氣閥門關閉。The gas flow control method as described in item 4 of the scope of patent application, wherein the on-off of the mass flow controller is controlled by the inlet valve provided on the inlet pipe of each mass flow controller. The intake valve of the selected mass flow controller is opened, and the intake valve of the unselected mass flow controller is closed.一種半導體設備，其包含：一反應腔以及與該反應腔透過管路連接的一氣體供應裝置，該氣體供應裝置為該反應腔提供一反應氣體，該反應腔用於處理半導體基片；該氣體供應裝置包含：一氣體源，其用於儲存處理製程所需的該反應氣體；以及一如申請專利範圍第1項至第3項中任意一項所述的氣體流量控制裝置。A semiconductor device including:A reaction chamber and a gas supply device connected to the reaction chamber through a pipeline, the gas supply device provides a reaction gas for the reaction chamber, the reaction chamber is used for processing semiconductor substrates; the gas supply device includes: a gas source , Which is used to store the reaction gas required for the processing process; and the gas flow control device as described in any one of items 1 to 3 in the scope of the patent application.

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