TWI731776B - Electronic device - Google Patents

Abstract

An electronic device includes a flexible substrate, a first insulating layer, first metal pads, second metal pads, conductive oxide pads, first elastic materials, a circuit substrate, and pins. The first insulating layer is located on the flexible substrate. The first metal pads are located on the first insulating layer. The second metal pads are respectively located on the first metal pads. The conductive oxide pads are respectively located on the second metal pads. The first elastic materials are respectively located on at least one side of the second metal pads. The first elastic materials are filled in first openings. Each first opening penetrates through the first insulating layer. An extension path of each first opening extends through a side of a corresponding first metal pad. The pins are located on the circuit substrate and overlap the conductive oxide pads respectively.

Description

Translated fromChinese

電子裝置Electronic device

本發明是有關於一種電子裝置，且特別是有關於一種具有伸縮材料的電子裝置。The present invention relates to an electronic device, and more particularly to an electronic device with a stretchable material.

在一些電子裝置中，為了將晶片整合於大面積的基板上，通常會先將多個晶片設置於電路板上，再將電路板接合至基板。舉例來說，在顯示裝置中，驅動晶片設置於電路板上，接著將電路板接合至畫素陣列基板，使驅動晶片得以驅動畫素陣列基板上的畫素。In some electronic devices, in order to integrate the chips on a large-area substrate, a plurality of chips are usually placed on a circuit board, and then the circuit board is bonded to the substrate. For example, in a display device, a driver chip is disposed on a circuit board, and then the circuit board is bonded to a pixel array substrate, so that the driver chip can drive the pixels on the pixel array substrate.

然而，在將電路板接合至基板時，電路板上的引腳之間的間距或是基板上之接墊之間的間距容易因為熱漲冷縮而改變，導致電路板上的引腳沒能與基板上之接墊對準，且使電路板與基板之間形成斷路。However, when the circuit board is joined to the substrate, the spacing between the pins on the circuit board or the spacing between the pads on the substrate is easily changed due to thermal expansion and contraction, resulting in failure of the pins on the circuit board. Align with the pads on the substrate, and make a break between the circuit board and the substrate.

本發明提供一種電子裝置，能改善電路基板與軟性基板之間接合不佳的問題。The present invention provides an electronic device that can improve the problem of poor bonding between a circuit substrate and a flexible substrate.

本發明的一種電子裝置，包括軟性基板、第一絕緣層、多個第一金屬接墊、多個第二金屬接墊、多個導電氧化物接墊、多個第一伸縮材料、電路基板以及多個引腳。第一絕緣層位於軟性基板上。第一金屬接墊位於第一絕緣層上。第二金屬接墊分別位於第一金屬接墊上。導電氧化物接墊分別位於第二金屬接墊上。多個第一伸縮材料分別位於第二金屬接墊的至少一側且分別填入第一開口中。各第一開口貫穿第一絕緣層。各第一開口的延伸路徑延伸經過對應之第一金屬接墊的側邊。第一伸縮材料的熱膨脹係數大於電路基板的熱膨脹係數。引腳位於電路基板上，且分別重疊於導電氧化物接墊。引腳分別與導電氧化物接墊電性連接。An electronic device of the present invention includes a flexible substrate, a first insulating layer, a plurality of first metal pads, a plurality of second metal pads, a plurality of conductive oxide pads, a plurality of first elastic materials, a circuit substrate, and Multiple pins. The first insulating layer is located on the flexible substrate. The first metal pad is located on the first insulating layer. The second metal pads are respectively located on the first metal pads. The conductive oxide pads are respectively located on the second metal pads. A plurality of first stretchable materials are respectively located on at least one side of the second metal pad and are respectively filled into the first opening. Each first opening penetrates the first insulating layer. The extension path of each first opening extends through the side of the corresponding first metal pad. The thermal expansion coefficient of the first stretchable material is greater than the thermal expansion coefficient of the circuit board. The pins are located on the circuit substrate and overlap the conductive oxide pads respectively. The pins are respectively electrically connected with conductive oxide pads.

10、20、30、40:電子裝置10, 20, 30, 40: electronic device

100、100a:畫素陣列基板100, 100a: Pixel array substrate

110:軟性基板110: Flexible substrate

110t、140t、150t、160t、ILt:頂面110t, 140t, 150t, 160t, ILt: top surface

120:第一絕緣層120: first insulating layer

130:第二絕緣層130: second insulating layer

140:第一金屬接墊140: The first metal pad

140s、150s、160s:側邊140s, 150s, 160s: side

150:第二金屬接墊150: second metal pad

160:導電氧化物接墊160: conductive oxide pad

162:第一導電氧化物162: The first conductive oxide

164:第二導電氧化物164: second conductive oxide

160a:凸部160a: convex

170:第一伸縮材料170: The first stretch material

180:導線180: wire

190:第二伸縮材料190: The second stretch material

200:電路基板200: Circuit board

210:引腳210: pin

212:第一導電層212: first conductive layer

214:第二導電層214: second conductive layer

210a:凹部210a: recess

CP:導電粒子CP: conductive particles

G1、G2:凹槽G1, G2: Groove

IL:第二介電層IL: second dielectric layer

ILD:第一介電層ILD: first dielectric layer

O1:第一開口O1: first opening

O2:第二開口O2: second opening

W1、W1’、W2、W2’:寬度W1, W1’, W2, W2’: width

圖1A至圖1C是依照本發明的一實施例的一種電子裝置的製造方法的剖面示意圖。1A to 1C are schematic cross-sectional views of a manufacturing method of an electronic device according to an embodiment of the invention.

圖2是圖1C的電子裝置的上視示意圖。FIG. 2 is a schematic top view of the electronic device of FIG. 1C.

圖3是依照本發明的一實施例的一種電子裝置的剖面示意圖。3 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention.

圖4A至圖4C是依照本發明的一實施例的一種電子裝置的製造方法的剖面示意圖。4A to 4C are schematic cross-sectional views of a manufacturing method of an electronic device according to an embodiment of the invention.

圖5是圖4C的電子裝置的上視示意圖。Fig. 5 is a schematic top view of the electronic device of Fig. 4C.

圖6A至圖6C是依照本發明的一實施例的一種電子裝置的製造方法的剖面示意圖。6A to 6C are a manufacturing method of an electronic device according to an embodiment of the present inventionSchematic diagram of the cross section of the manufacturing method.

圖1A至圖1C是依照本發明的一實施例的一種電子裝置10的製造方法的剖面示意圖。1A to 1C are schematic cross-sectional views of a manufacturing method of anelectronic device 10 according to an embodiment of the invention.

請參考圖1A，提供畫素陣列基板100以及電路基板200。畫素陣列基板100包括軟性基板110、第一絕緣層120、多個第一金屬接墊140、多個第二金屬接墊150、多個導電氧化物接墊160以及多個第一伸縮材料170。在本實施例中，畫素陣列基板100還包括第二絕緣層130。Please refer to FIG. 1A, apixel array substrate 100 and acircuit substrate 200 are provided. Thepixel array substrate 100 includes aflexible substrate 110, a firstinsulating layer 120, a plurality offirst metal pads 140, a plurality ofsecond metal pads 150, a plurality ofconductive oxide pads 160, and a plurality of firststretchable materials 170 . In this embodiment, thepixel array substrate 100 further includes a secondinsulating layer 130.

第一絕緣層120位於軟性基板110上。在一些實施例中，軟性基板110的材料包括聚醯胺(Polyamide，PA)、聚亞醯胺(Polyimide，PI)、聚甲基丙烯酸甲酯(Poly(methyl methacrylate)，PMMA)、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)、聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)、玻璃纖維強化塑膠(fiber reinforced plastics，FRP)、聚醚醚酮(polyetheretherketone，PEEK)、環氧樹脂或其它合適的材料或前述至少二種之組合，但本發明不以此為限。在一些實施例中，第一絕緣層120的材料包括氧化矽、氮化矽、氮氧化矽或其他適合的材料或上述材料的組合。第一絕緣層120為單層或多層結構，且第一絕緣層120可作為阻水阻氣層。The firstinsulating layer 120 is located on theflexible substrate 110. In some embodiments, the material of theflexible substrate 110 includes polyamide (PA), polyimide (PI), poly(methyl methacrylate) (PMMA), polynaphthalene Polyethylene naphthalate (PEN), polyethylene terephthalate (PET), fiber reinforced plastics (FRP), polyetheretherketone (PEEK), ring Oxygen resin or other suitable materials or a combination of at least two of the foregoing, but the present invention is not limited thereto. In some embodiments, the material of the firstinsulating layer 120 includes silicon oxide, silicon nitride, silicon oxynitride, or other suitable materials or a combination of the foregoing materials. The firstinsulating layer 120 has a single-layer or multi-layer structure, and the firstinsulating layer 120 can serve as a water and gas barrier layer.

第二絕緣層130位於第一絕緣層120上。在一些實施例中，第二絕緣層130的材料包括氧化矽、氮化矽、氮氧化矽或其他適合的材料或上述材料的組合。The secondinsulating layer 130 is located on the firstinsulating layer 120. In some embodimentsWherein, the material of the secondinsulating layer 130 includes silicon oxide, silicon nitride, silicon oxynitride, or other suitable materials or a combination of the foregoing materials.

多個第一金屬接墊140位於第一絕緣層120上。在本實施例中，多個第一金屬接墊140位於第二絕緣層130上。第一金屬接墊140的材料例如包括鉻、金、銀、銅、錫、鉛、鉿、鎢、鉬、釹、鈦、鉭、鋁、鋅、上述金屬的合金或其他金屬材料。第一金屬接墊140為單層或多層結構。The plurality offirst metal pads 140 are located on the first insulatinglayer 120. In this embodiment, the plurality offirst metal pads 140 are located on the second insulatinglayer 130. The material of thefirst metal pad 140 includes, for example, chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, alloys of the foregoing metals, or other metal materials. Thefirst metal pad 140 has a single-layer or multi-layer structure.

多個第二金屬接墊150分別位於多個第一金屬接墊140上。在本實施例中，第二金屬接墊150重疊並直接接觸對應的第一金屬接墊140。在本實施例中，第二金屬接墊150覆蓋第一金屬接墊140的部分頂面140t，並露出第一金屬接墊140的另一部分頂面140t。第二金屬接墊150的材料例如包括鉻、金、銀、銅、錫、鉛、鉿、鎢、鉬、釹、鈦、鉭、鋁、鋅、上述金屬的合金或其他金屬材料。第二金屬接墊150為單層或多層結構。The plurality ofsecond metal pads 150 are respectively located on the plurality offirst metal pads 140. In this embodiment, thesecond metal pad 150 overlaps and directly contacts the correspondingfirst metal pad 140. In this embodiment, thesecond metal pad 150 covers a part of thetop surface 140t of thefirst metal pad 140 and exposes another part of thetop surface 140t of thefirst metal pad 140. The material of thesecond metal pad 150 includes, for example, chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, alloys of the foregoing metals, or other metal materials. Thesecond metal pad 150 has a single-layer or multi-layer structure.

多個凹槽G1分別形成於兩相鄰的第二金屬接墊150之間。換句話說，兩相鄰的第二金屬接墊150之間的間隙形成凹槽G1。凹槽G1的底部為第一金屬接墊140的部分頂面140t。A plurality of grooves G1 are respectively formed between two adjacentsecond metal pads 150. In other words, the gap between two adjacentsecond metal pads 150 forms the groove G1. The bottom of the groove G1 is a part of thetop surface 140t of thefirst metal pad 140.

導電氧化物接墊160分別位於第二金屬接墊150上。在本實施例中，導電氧化物接墊160覆蓋第二金屬接墊150的頂面150t與側面150s，並從第二金屬接墊150延伸至第一金屬接墊140的頂面140t。導電氧化物接墊160接觸第二金屬接墊150的頂面150t、第二金屬接墊150的側面150s以及第一金屬接墊140未被第二金屬接墊150覆蓋的部分頂面140t。導電氧化物接墊160實質上分別從第二金屬接墊150的頂部150t延伸至凹槽G1的底部。Theconductive oxide pads 160 are respectively located on thesecond metal pads 150. In this embodiment, theconductive oxide pad 160 covers thetop surface 150t and theside surface 150s of thesecond metal pad 150, and extends from thesecond metal pad 150 to thetop surface 140t of thefirst metal pad 140. Theconductive oxide pad 160 contacts thetop surface 150t of thesecond metal pad 150, theside surface 150s of thesecond metal pad 150, and thefirst metal pad 140 is notPart of thetop surface 140t covered by thesecond metal pad 150. Theconductive oxide pads 160 extend substantially from the top 150t of thesecond metal pad 150 to the bottom of the groove G1, respectively.

多個第一伸縮材料170分別位於第二金屬接墊150的至少一側且分別填入第一開口O1中。各第一開口O1貫穿第一絕緣層120。在本實施例中，各第一開口O1貫穿第一絕緣層120以及第二絕緣層130，且各第一開口O1的延伸路徑延伸經過對應之第一金屬接墊140的側邊140s、對應之第二金屬接墊150的側邊150s以及對應之導電氧化物接墊160的側邊160s。在本實施例中，第一開口O1延伸至軟性基板110的頂面。第一伸縮材料170從對應的導電氧化物接墊160的頂面160t延伸至軟性基板110的頂面110t，並與軟性基板110的頂面110t接觸。The plurality of firstelastic materials 170 are respectively located on at least one side of thesecond metal pad 150 and are respectively filled in the first opening O1. Each first opening O1 penetrates the first insulatinglayer 120. In this embodiment, each first opening O1 penetrates the first insulatinglayer 120 and the second insulatinglayer 130, and the extension path of each first opening O1 extends through theside 140s of the correspondingfirst metal pad 140, corresponding to Theside 150s of thesecond metal pad 150 and thecorresponding side 160s of theconductive oxide pad 160. In this embodiment, the first opening O1 extends to the top surface of theflexible substrate 110. The firstelastic material 170 extends from thetop surface 160t of the correspondingconductive oxide pad 160 to thetop surface 110t of theflexible substrate 110, and is in contact with thetop surface 110t of theflexible substrate 110.

第一伸縮材料170位於相鄰的兩個第一金屬接墊140之間。在本實施例中，第一伸縮材料170與第一金屬接墊140直接接觸，但本發明不以此為限。在一些實施例中，第一伸縮材料170與第一金屬接墊140之間夾有其他絕緣層(圖1A未繪出)。The firstelastic material 170 is located between two adjacentfirst metal pads 140. In this embodiment, the firstelastic material 170 is in direct contact with thefirst metal pad 140, but the invention is not limited to this. In some embodiments, another insulating layer is sandwiched between the firstelastic material 170 and the first metal pad 140 (not shown in FIG. 1A).

在一些實施例中，第一伸縮材料170包括光阻材料。第一伸縮材料170的寬度W1例如為0.5微米至10微米。In some embodiments, the firststretchable material 170 includes a photoresist material. The width W1 of the firststretchable material 170 is, for example, 0.5 micrometers to 10 micrometers.

電路基板200例如適用於薄膜覆晶封裝(Chip On Film；COF)。電路基板200的材料包括聚醯胺(Polyamide，PA)、聚亞醯胺(Polyimide，PI)、聚甲基丙烯酸甲酯(Poly(methyl methacrylate)，PMMA)、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)、聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)、玻璃纖維強化塑膠(fiber reinforced plastics，FRP)、聚醚醚酮(polyetheretherketone，PEEK)、環氧樹脂或其它合適的材料或前述至少二種之組合，但本發明不以此為限。在一些實施例中，電路基板200與軟性基板110包括相同材質，但本發明不以此為限。引腳210位於電路基板200上。Thecircuit substrate 200 is suitable for, for example, Chip On Film (COF). The material of thecircuit substrate 200 includes polyamide (PA), polyimide (PI), poly (methyl methacrylate) (PMMA), polyethylene naphthalate ( polyethylene naphthalate, PEN), polyethylene terephthalate (polyethylene terephthalate)terephthalate, PET), fiber reinforced plastics (FRP), polyetheretherketone (PEEK), epoxy resin, or other suitable materials or a combination of at least two of the foregoing, but the present invention does not take this as limit. In some embodiments, thecircuit substrate 200 and theflexible substrate 110 comprise the same material, but the invention is not limited to this. Thepin 210 is located on thecircuit substrate 200.

在本實施例中，第一伸縮材料170的熱膨脹係數大於電路基板200的熱膨脹係數。舉例來說，第一伸縮材料170的熱膨脹係數為40至60(ppm/K)，且電路基板200的熱膨脹係數為10至30(ppm/K)。In this embodiment, the thermal expansion coefficient of the firstelastic material 170 is greater than the thermal expansion coefficient of thecircuit board 200. For example, the thermal expansion coefficient of the firstelastic material 170 is 40-60 (ppm/K), and the thermal expansion coefficient of thecircuit board 200 is 10-30 (ppm/K).

請參考圖1B與圖1C，將電路基板200接合至畫素陣列基板100。Please refer to FIG. 1B and FIG. 1C to bond thecircuit substrate 200 to thepixel array substrate 100.

請先參考圖1B，加熱電路基板200以及畫素陣列基板100。電路基板200以及軟性基板110在加熱之後膨脹。Please refer to FIG. 1B first, thecircuit substrate 200 and thepixel array substrate 100 are heated. Thecircuit substrate 200 and theflexible substrate 110 expand after heating.

軟性基板110的膨脹程度會被其上設置的元件所限制。舉例來說，軟性基板110上的第一金屬接墊140、第二金屬接墊150以及導電氧化物接墊160等元件的熱膨脹係數較小，因此限制了軟性基板110的膨脹程度。在本實施例中，藉由第一伸縮材料170的設置能增加軟性基板110的膨脹程度，使軟性基板110的膨脹程度能相等或約等於電路基板200的膨脹程度，並使引腳210能更輕易的對準導電氧化物接墊160。The expansion degree of theflexible substrate 110 will be limited by the components disposed on it. For example, thefirst metal pad 140, thesecond metal pad 150, and theconductive oxide pad 160 on theflexible substrate 110 have relatively small thermal expansion coefficients, which limits the degree of expansion of theflexible substrate 110. In this embodiment, the arrangement of the firstelastic material 170 can increase the expansion degree of theflexible substrate 110, so that the expansion degree of theflexible substrate 110 can be equal to or approximately equal to the expansion degree of thecircuit substrate 200, and thepins 210 can be more expanded. Theconductive oxide pad 160 is easily aligned.

在一些實施例中，在接合區中，軟性基板110在水平方向的膨脹程度△L2約等於電路基板200在水平方向的膨脹程度△L1，且軟性基板110在水平方向的膨脹程度△L2約等於第一伸縮材料170在水平方向的膨脹程度△L3(即寬度W1’減寬度W1)的總合。In some embodiments, in the bonding area, the degree of expansion ΔL2 of theflexible substrate 110 in the horizontal direction is approximately equal to the degree of expansion ΔL2 of thecircuit substrate 200 in the horizontal direction.L1, and the expansion degree ΔL2 of theflexible substrate 110 in the horizontal direction is approximately equal to the sum of the expansion degree ΔL3 of the firstelastic material 170 in the horizontal direction (that is, the width W1' minus the width W1).

請參考圖1C，導電氧化物接墊160以及第一伸縮材料170構成凹槽G2，且將引腳210置於凹槽G2中，軟性基板110、第一伸縮材料170以及電路基板200在降溫之後收縮。由於引腳210位於凹槽G2中，能進一步提升引腳210與導電氧化物接墊160之間的接合強度。換句話說，藉由使引腳210與導電氧化物接墊160互相卡合能提升兩者之間的接合強度。在本實施例中，引腳210為梯形，且用於容納引腳210的空間也為梯形，藉此減少引腳210在接合製程中發生拉扯或碰撞導致接合失效的機會。1C, theconductive oxide pad 160 and the firstelastic material 170 form a groove G2, and thepin 210 is placed in the groove G2, theflexible substrate 110, the firstelastic material 170, and thecircuit substrate 200 are cooled shrink. Since thepin 210 is located in the groove G2, the bonding strength between thepin 210 and theconductive oxide pad 160 can be further improved. In other words, by engaging thepin 210 and theconductive oxide pad 160 with each other, the bonding strength between the two can be improved. In this embodiment, thepin 210 is a trapezoid, and the space for accommodating thepin 210 is also a trapezoid, thereby reducing the chance that thepin 210 is pulled or collided during the bonding process to cause bonding failure.

在一些實施例中，引腳210的寬度約等於凹槽G2的寬度。在一些實施例中，凹槽G2內設置有異方性導電膠或其他導電膠，且引腳210的寬度略小於凹槽G2的寬度。在一些實施例中，異方性導電膠中的導電粒子電性連接引腳210至導電氧化物接墊160。In some embodiments, the width of thepin 210 is approximately equal to the width of the groove G2. In some embodiments, anisotropic conductive glue or other conductive glue is disposed in the groove G2, and the width of thepin 210 is slightly smaller than the width of the groove G2. In some embodiments, the conductive particles in the anisotropic conductive adhesive are electrically connected to thepin 210 to theconductive oxide pad 160.

圖2是圖1C的電子裝置10的上視示意圖，其中圖1C對應了圖2線aa’的位置。圖1C省略繪示了電路基板200以及引腳210。FIG. 2 is a schematic top view of theelectronic device 10 of FIG. 1C, in which FIG. 1C corresponds to the position of the line aa' in FIG. 2. In FIG. 1C, thecircuit substrate 200 and thepins 210 are omitted.

請參考圖2，畫素陣列基板100具有顯示區AA以及位於顯示區AA外側的周邊區BA。第一金屬接墊140、第二金屬接墊150以及導電氧化物接墊160位於周邊區BA上，且透過導線180而電性連接至顯示區AA上的畫素陣列(未繪出)。Please refer to FIG. 2, thepixel array substrate 100 has a display area AA and a peripheral area BA located outside the display area AA. Thefirst metal pad 140, thesecond metal pad 150 and theconductive oxide pad 160 are located on the peripheral area BA and pass through thewire 180And it is electrically connected to the pixel array (not shown) on the display area AA.

在本實施例中，導線180與第二金屬接墊150屬於相同膜層，但本發明不以此為限。在其他實施例中，導線180與第一金屬接墊140屬於相同膜層。In this embodiment, thewire 180 and thesecond metal pad 150 belong to the same film layer, but the invention is not limited to this. In other embodiments, thewire 180 and thefirst metal pad 140 belong to the same film layer.

圖3是依照本發明的一實施例的一種電子裝置的剖面示意圖。在此必須說明的是，圖3的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。3 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 3 uses the element numbers and part of the content of the embodiment of FIGS. 1A to 1C, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted parts, reference may be made to the foregoing embodiment, which will not be repeated here.

請參考圖3，在電子裝置20中，至少一個引腳210的側面具有凹部210a。在本實施例中，引腳210包括依序堆疊的第一導電層212與第二導電層214。在本實施例中，凹部210a設置於第一導電層212與第二導電層214的交界處。Please refer to FIG. 3, in theelectronic device 20, at least onepin 210 has aconcave portion 210 a on the side surface. In this embodiment, thepin 210 includes a firstconductive layer 212 and a secondconductive layer 214 stacked in sequence. In this embodiment, therecess 210 a is disposed at the junction of the firstconductive layer 212 and the secondconductive layer 214.

至少一個導電氧化物接墊160的側面具有凸部160a。在本實施例中，導電氧化物接墊160包括依序堆疊的第一導電氧化物162與第二導電氧化物164，凸部160a設置於第二導電氧化物164上。凸部160a填入凹部210a，藉此提升導電氧化物接墊160與引腳210之間的接合強度。At least oneconductive oxide pad 160 has aconvex portion 160a on its side surface. In this embodiment, theconductive oxide pad 160 includes a firstconductive oxide 162 and a secondconductive oxide 164 stacked in sequence, and theprotrusion 160 a is disposed on the secondconductive oxide 164. Theconvex portion 160a fills theconcave portion 210a, thereby improving the bonding strength between theconductive oxide pad 160 and thepin 210.

圖4A至圖4C是依照本發明的一實施例的一種電子裝置30的製造方法的剖面示意圖。4A to 4C are schematic cross-sectional views of a method of manufacturing anelectronic device 30 according to an embodiment of the invention.

請參考圖4A，提供畫素陣列基板100a以及電路基板200。畫素陣列基板100a包括軟性基板110、第一絕緣層120、多個第一金屬接墊140、多個第二金屬接墊150、多個導電氧化物接墊160、多個輔助結構162以及多個第一伸縮材料170。在本實施例中，畫素陣列基板100a還包括第二絕緣層130、第一介電層ILD、第二介電層IL以及多個第二伸縮材料190。Please refer to FIG. 4A, apixel array substrate 100a and acircuit substrate 200 are provided. Thepixel array substrate 100a includes aflexible substrate 110, a first insulatinglayer 120, and a plurality ofAmetal pad 140, a plurality ofsecond metal pads 150, a plurality ofconductive oxide pads 160, a plurality ofauxiliary structures 162, and a plurality of firstelastic materials 170. In this embodiment, thepixel array substrate 100a further includes a second insulatinglayer 130, a first dielectric layer ILD, a second dielectric layer IL, and a plurality of secondstretchable materials 190.

第一絕緣層120位於軟性基板110上。第二絕緣層130位於第一絕緣層120上。The first insulatinglayer 120 is located on theflexible substrate 110. The secondinsulating layer 130 is located on the first insulatinglayer 120.

多個第一金屬接墊140位於第一絕緣層120上。在本實施例中，多個第一金屬接墊140以及第一介電層ILD位於第二絕緣層130上。多個第二金屬接墊150分別位於多個第一金屬接墊140上。在本實施例中，第二金屬接墊150重疊並直接接觸對應的第一金屬接墊140。在本實施例中，第二金屬接墊150覆蓋第一金屬接墊140的頂面140t。The plurality offirst metal pads 140 are located on the first insulatinglayer 120. In this embodiment, the plurality offirst metal pads 140 and the first dielectric layer ILD are located on the second insulatinglayer 130. The plurality ofsecond metal pads 150 are respectively located on the plurality offirst metal pads 140. In this embodiment, thesecond metal pad 150 overlaps and directly contacts the correspondingfirst metal pad 140. In this embodiment, thesecond metal pad 150 covers thetop surface 140t of thefirst metal pad 140.

第二介電層IL位於第一介電層ILD上。第二介電層IL具有多個凹槽G1，且第二金屬接墊150位於凹槽G1的底部。The second dielectric layer IL is located on the first dielectric layer ILD. The second dielectric layer IL has a plurality of grooves G1, and thesecond metal pad 150 is located at the bottom of the groove G1.

導電氧化物接墊160分別位於第二金屬接墊150上。在本實施例中，導電氧化物接墊160覆蓋並接觸第二金屬接墊150的頂面150t。Theconductive oxide pads 160 are respectively located on thesecond metal pads 150. In this embodiment, theconductive oxide pad 160 covers and contacts thetop surface 150t of thesecond metal pad 150.

輔助結構162分別設置於凹槽G1的側壁。輔助結構162分離於導電氧化物接墊160。Theauxiliary structures 162 are respectively disposed on the sidewalls of the groove G1. Theauxiliary structure 162 is separated from theconductive oxide pad 160.

多個第一伸縮材料170分別位於第二金屬接墊150的至少一側且分別填入第一開口O1中。各第一開口O1貫穿第一絕緣層120。在本實施例中，各第一開口O1貫穿第一絕緣層120以及第二絕緣層130，且各第一開口O1的延伸路徑延伸經過對應之第一金屬接墊140的側邊140s、對應之第二金屬接墊150的側邊150s以及對應之導電氧化物接墊160的側邊160s。在本實施例中，第一開口O1延伸至軟性基板110的頂面。第一伸縮材料170從對應的導電氧化物接墊160的頂面160t延伸至軟性基板110的頂面110t，並與軟性基板110的頂面110t接觸。部分第一伸縮材料170位於輔助結構162與導電氧化物接墊160之間，並將輔助結構162與導電氧化物接墊160分隔開來。The plurality of firstelastic materials 170 are respectively located on at least one side of thesecond metal pad 150 and are respectively filled in the first opening O1. Each first opening O1 penetrates the first insulatinglayer 120. In this embodiment, each first opening O1 penetrates the first insulatinglayer 120 andThe secondinsulating layer 130, and the extension path of each first opening O1 extends through theside 140s of the correspondingfirst metal pad 140, theside 150s of the correspondingsecond metal pad 150, and the correspondingconductive oxide pad 160s on the side of the 160. In this embodiment, the first opening O1 extends to the top surface of theflexible substrate 110. The firstelastic material 170 extends from thetop surface 160t of the correspondingconductive oxide pad 160 to thetop surface 110t of theflexible substrate 110, and is in contact with thetop surface 110t of theflexible substrate 110. A part of the firstelastic material 170 is located between theauxiliary structure 162 and theconductive oxide pad 160 and separates theauxiliary structure 162 from theconductive oxide pad 160.

在本實施例中，第一伸縮材料170直接接觸第一金屬接墊140以及第二金屬接墊150，但本發明不以此為限。在一些實施例中，第一伸縮材料170與第一金屬接墊140之間夾有部分第一介電層ILD，且第一伸縮材料170與第二金屬接墊150之間夾有部分第二介電層IL。In this embodiment, the firstelastic material 170 directly contacts thefirst metal pad 140 and thesecond metal pad 150, but the invention is not limited to this. In some embodiments, a portion of the first dielectric layer ILD is sandwiched between the firstelastic material 170 and thefirst metal pad 140, and a portion of the second dielectric layer is sandwiched between the firstelastic material 170 and thesecond metal pad 150. The dielectric layer IL.

在一些實施例中，第一伸縮材料170包括光阻材料。第一伸縮材料170的寬度W1例如為0.5微米至10微米。In some embodiments, the firststretchable material 170 includes a photoresist material. The width W1 of the firststretchable material 170 is, for example, 0.5 micrometers to 10 micrometers.

多個第二伸縮材料190分別填入多個第二開口O2中。第二開口O2分別位於凹槽G1的至少一側。第二開口O2以及第二伸縮材料190從第二介電層ILD的頂面ILt延伸至軟性基板110的頂面110t。第二伸縮材料190位於相鄰的兩個凹槽G1之間、凹槽G1與顯示區AA之間以及凹槽G1與軟性基板110的邊緣之間。The plurality of secondstretchable materials 190 are respectively filled in the plurality of second openings O2. The second openings O2 are respectively located on at least one side of the groove G1. The second opening O2 and the secondelastic material 190 extend from the top surface ILt of the second dielectric layer ILD to thetop surface 110t of theflexible substrate 110. The secondstretchable material 190 is located between two adjacent grooves G1, between the groove G1 and the display area AA, and between the groove G1 and the edge of theflexible substrate 110.

在一些實施例中，第二伸縮材料190包括有機光阻材料。第二伸縮材料190的寬度W2例如為3微米至30微米。In some embodiments, the secondstretchable material 190 includes an organic photoresist material. The width W2 of the secondstretchable material 190 is, for example, 3 micrometers to 30 micrometers.

電路基板200例如適用於薄膜覆晶封裝。引腳210位於電路基板200上。Thecircuit substrate 200 is suitable for, for example, a film-on-chip package. Thepin 210 is located on thecircuit substrate 200.

在本實施例中，第一伸縮材料170的熱膨脹係數大於電路基板200的熱膨脹係數。舉例來說，第一伸縮材料170的熱膨脹係數為40至60(ppm/K)，且電路基板200的熱膨脹係數為10至30(ppm/K)。In this embodiment, the thermal expansion coefficient of the firstelastic material 170 is greater than the thermal expansion coefficient of thecircuit board 200. For example, the thermal expansion coefficient of the firstelastic material 170 is 40-60 (ppm/K), and the thermal expansion coefficient of thecircuit board 200 is 10-30 (ppm/K).

在一些實施例中，第二伸縮材料190與第一伸縮材料170具有不同材料，第二伸縮材料190的熱膨脹係數小於第一伸縮材料170的熱膨脹係數。舉例來說，第二伸縮材料190的熱膨脹係數為1至10(ppm/K)。In some embodiments, the secondstretchable material 190 and the firststretchable material 170 have different materials, and the thermal expansion coefficient of the secondstretchable material 190 is smaller than the thermal expansion coefficient of the firststretchable material 170. For example, the thermal expansion coefficient of the secondstretchable material 190 is 1 to 10 (ppm/K).

請參考圖4B與圖4C，將電路基板200接合至畫素陣列基板100a。Please refer to FIG. 4B and FIG. 4C to bond thecircuit substrate 200 to thepixel array substrate 100a.

請先參考圖4B，加熱電路基板200以及畫素陣列基板100a。電路基板200以及軟性基板110在加熱之後膨脹。Please refer to FIG. 4B first, heating thecircuit substrate 200 and thepixel array substrate 100a. Thecircuit substrate 200 and theflexible substrate 110 expand after heating.

軟性基板110的膨脹程度會被其上設置的元件所限制。舉例來說，軟性基板110上的第一金屬接墊140、第二金屬接墊150、導電氧化物接墊160以及輔助結構162等元件的熱膨脹係數較小，因此限制了軟性基板110的膨脹程度。在本實施例中，藉由第一伸縮材料170以及第二伸縮材料190的設置能增加軟性基板110的膨脹程度，使軟性基板110的膨脹程度能相等或約等於電路基板200的膨脹程度，並使引腳210能更輕易的對準導電氧化物接墊160。The expansion degree of theflexible substrate 110 will be limited by the components disposed on it. For example, thefirst metal pad 140, thesecond metal pad 150, theconductive oxide pad 160, and theauxiliary structure 162 on theflexible substrate 110 have relatively small thermal expansion coefficients, thus limiting the degree of expansion of theflexible substrate 110 . In this embodiment, the arrangement of the firstelastic material 170 and the secondelastic material 190 can increase the expansion degree of theflexible substrate 110, so that the expansion degree of theflexible substrate 110 can be equal to or approximately equal to the expansion degree of thecircuit substrate 200, and Thepin 210 can be aligned with theconductive oxide pad 160 more easily.

在一些實施例中，在接合區中，軟性基板110在水平方向的膨脹程度△L2約等於電路基板200在水平方向的膨脹程度△L1，且軟性基板110在水平方向的膨脹程度△L2約等於第一伸縮材料170在水平方向的膨脹程度△L3(寬度W1’減寬度W1)以及第二伸縮材料190在水平方向的膨脹(或收縮)程度△L4(寬度W2’減寬度W2)的總合。In some embodiments, in the bonding area, the degree of expansion ΔL2 of theflexible substrate 110 in the horizontal direction is approximately equal to the degree of expansion ΔL1 of thecircuit substrate 200 in the horizontal direction, and the degree of expansion ΔL2 of theflexible substrate 110 in the horizontal direction is approximately equal to The sum of the degree of expansion of the firststretchable material 170 in the horizontal direction △L3 (width W1' minus width W1) and the degree of expansion (or contraction) of the secondstretchable material 190 in the horizontal direction △L4 (width W2' minus width W2) .

請參考圖4C，導電氧化物接墊160以及第一伸縮材料170構成凹槽G2，且將引腳210置於凹槽G2中，軟性基板110、第一伸縮材料170以及電路基板200在降溫之後收縮。由於引腳210位於凹槽G2中，能進一步提升引腳210與導電氧化物接墊160之間的接合強度。換句話說，藉由使引腳210卡合於導電氧化物接墊160以及輔助結構162能提升接合強度。在本實施例中，引腳210為梯形，且用於容納引腳210的空間也為梯形，藉此減少引腳210在接合製程中發生拉扯或碰撞導致接合失效的機會。4C, theconductive oxide pad 160 and the firstelastic material 170 form a groove G2, and thepin 210 is placed in the groove G2. Theflexible substrate 110, the firstelastic material 170, and thecircuit substrate 200 are cooled shrink. Since thepin 210 is located in the groove G2, the bonding strength between thepin 210 and theconductive oxide pad 160 can be further improved. In other words, the bonding strength can be improved by engaging thepin 210 with theconductive oxide pad 160 and theauxiliary structure 162. In this embodiment, thepin 210 is a trapezoid, and the space for accommodating thepin 210 is also a trapezoid, thereby reducing the chance that thepin 210 is pulled or collided during the bonding process to cause bonding failure.

在一些實施例中，引腳210的寬度約等於凹槽G2的寬度。在一些實施例中，凹槽G2內設置有異方性導電膠或其他導電膠，且引腳210的寬度略小於凹槽G2的寬度。在一些實施例中，異方性導電膠中的導電粒子CP電性連接引腳210至導電氧化物接墊160。圖4B與圖4C繪示了異方性導電膠中的導電粒子CP，並省略繪示異方性導電膠中的高分子膠材。In some embodiments, the width of thepin 210 is approximately equal to the width of the groove G2. In some embodiments, anisotropic conductive glue or other conductive glue is disposed in the groove G2, and the width of thepin 210 is slightly smaller than the width of the groove G2. In some embodiments, the conductive particles CP in the anisotropic conductive adhesive are electrically connected to thepin 210 to theconductive oxide pad 160. 4B and 4C illustrate the conductive particles CP in the anisotropic conductive adhesive, and omit the illustration of the polymer adhesive in the anisotropic conductive adhesive.

圖5是圖4C的電子裝置30的上視示意圖，其中圖4C對應了圖5線bb’的位置。Fig. 5 is a schematic top view of theelectronic device 30 of Fig. 4C, wherein Fig. 4C corresponds to the position of the line bb' in Fig. 5.

請參考圖5，在電子裝置30中，縱向延伸的第一伸縮材料170與橫向延伸的第一伸縮材料170彼此分離，避免不同方向的第一伸縮材料170的伸縮互相干擾。縱向延伸的第二伸縮材料190與橫向延伸的第二伸縮材料190彼此分離，避免不同方向的第二伸縮材料190的伸縮互相干擾。Please refer to FIG. 5, in theelectronic device 30, the longitudinally extending firstelastic material 170 and the laterally extending firstelastic material 170 are separated from each other, so as to avoid interference of the expansion and contraction of the firstelastic material 170 in different directions. The longitudinally extending secondelastic material 190 and the laterally extending secondelastic material 190 are separated from each other, so as to avoid the interference of the expansion and contraction of the secondelastic materials 190 in different directions.

在本實施例中，各第二金屬接墊150與各第一金屬接墊140被多個互相分離第一伸縮材料170所圍繞。In this embodiment, eachsecond metal pad 150 and eachfirst metal pad 140 are surrounded by a plurality of firststretchable materials 170 separated from each other.

圖6A至圖6C是依照本發明的一實施例的一種電子裝置40的製造方法的剖面示意圖。在此必須說明的是，圖6A至圖6C的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。6A to 6C are schematic cross-sectional views of a method of manufacturing anelectronic device 40 according to an embodiment of the invention. It must be noted here that the embodiment of FIGS. 6A to 6C uses the element numbers and part of the content of the embodiment of FIGS. 1A to 1C, wherein the same or similar numbers are used to denote the same or similar elements, and the same is omitted. Description of technical content. For the description of the omitted parts, reference may be made to the foregoing embodiment, which will not be repeated here.

請參考圖6A至圖6C，在本實施例中，第二伸縮材料190的熱膨脹係數小於電路基板200的熱膨脹係數。在本實施例中，第二伸縮材料190為遇熱收縮的材料。藉此，可以增加凹槽G1在高溫環境下的尺寸，使引腳210能在接合製程中更容易對準凹槽G1。6A to 6C, in this embodiment, the thermal expansion coefficient of the secondstretchable material 190 is smaller than the thermal expansion coefficient of thecircuit substrate 200. In this embodiment, the secondstretchable material 190 is a material that shrinks when exposed to heat. Thereby, the size of the groove G1 in a high temperature environment can be increased, so that thepin 210 can be more easily aligned with the groove G1 during the bonding process.

綜上所述，藉由伸縮材料的設置能增加軟性基板的膨脹程度，使軟性基板的膨脹程度能相等或約等於電路基板的膨脹程度，並使引腳能更輕易的對準導電氧化物接墊。In summary, the expansion degree of the flexible substrate can be increased by the arrangement of the stretchable material, so that the expansion degree of the flexible substrate can be equal to or approximately equal to the expansion degree of the circuit substrate, and the pins can be more easily aligned with the conductive oxide connection. pad.

100:畫素陣列基板100: Pixel array substrate

110:軟性基板110: Flexible substrate

110t、140t、150t、160t:頂面110t, 140t, 150t, 160t: top surface

120:第一絕緣層120: first insulating layer

130:第二絕緣層130: second insulating layer

140:第一金屬接墊140: The first metal pad

140s、150s、160s:側邊140s, 150s, 160s: side

150:第二金屬接墊150: second metal pad

160:導電氧化物接墊160: conductive oxide pad

170:第一伸縮材料170: The first stretch material

200:電路基板200: Circuit board

210:引腳210: pin

G1:凹槽G1: Groove

O1:第一開口O1: first opening

W1:寬度W1: width

Claims (11)

Translated fromChinese

一種電子裝置，包括：一軟性基板；一第一絕緣層，位於該軟性基板上；多個第一金屬接墊，位於該第一絕緣層上；多個第二金屬接墊，分別位於該些第一金屬接墊上；多個導電氧化物接墊，分別位於該些第二金屬接墊上；多個第一伸縮材料，分別位於該第二金屬接墊的至少一側且分別填入多個第一開口中，其中各該第一開口貫穿該第一絕緣層，且各該第一開口的延伸路徑延伸經過對應之該第一金屬接墊的側邊；一電路基板，其中該些第一伸縮材料的熱膨脹係數大於該電路基板的熱膨脹係數；以及多個引腳，位於該電路基板上，且分別重疊於該些導電氧化物接墊，並分別與該些導電氧化物接墊電性連接。An electronic device includes: a flexible substrate; a first insulating layer on the flexible substrate; a plurality of first metal pads on the first insulating layer; a plurality of second metal pads on the flexible substrate, respectively On the first metal pad; a plurality of conductive oxide pads are respectively located on the second metal pads; a plurality of first stretchable materials are respectively located on at least one side of the second metal pad and are respectively filled with a plurality of first In an opening, each of the first openings penetrates the first insulating layer, and the extension path of each of the first openings extends through the side of the corresponding first metal pad; a circuit substrate, wherein the first telescopic The thermal expansion coefficient of the material is greater than the thermal expansion coefficient of the circuit substrate; and a plurality of pins are located on the circuit substrate, overlap the conductive oxide pads, and are electrically connected to the conductive oxide pads.如請求項1所述的電子裝置，其中多個凹槽分別形成於兩相鄰的該些第二金屬接墊之間，該些導電氧化物接墊實質上分別從該些第二金屬接墊的頂部延伸至該些凹槽的底部，且該些引腳位於該些凹槽中。The electronic device according to claim 1, wherein a plurality of grooves are respectively formed between two adjacent second metal pads, and the conductive oxide pads are substantially separated from the second metal pads. The tops of the dies extend to the bottoms of the grooves, and the pins are located in the grooves.如請求項2所述的電子裝置，其中各該第一伸縮材料從對應的該導電氧化物接墊的頂面延伸至該軟性基板的頂面。The electronic device according to claim 2, wherein each of the first elastic materials extends from the top surface of the corresponding conductive oxide pad to the top surface of the flexible substrate.如請求項1所述的電子裝置，更包括：一介電層，其中該介電層具有多個凹槽，且該些第二金屬接墊位於該些凹槽的底部，該些導電氧化物接墊覆蓋該些第二金屬接墊的頂面。The electronic device according to claim 1, further comprising: a dielectric layer, wherein the dielectric layer has a plurality of grooves, the second metal pads are located at the bottom of the grooves, and the conductive oxides The pads cover the top surfaces of the second metal pads.如請求項4所述的電子裝置，更包括：多個輔助結構，分別設置於該些凹槽的側壁，且該些輔助結構分離於該些導電氧化物接墊，其中部分該些第一伸縮材料位於該些輔助結構與該些導電氧化物接墊之間。The electronic device according to claim 4, further comprising: a plurality of auxiliary structures respectively disposed on the sidewalls of the grooves, and the auxiliary structures are separated from the conductive oxide pads, and some of the first retractable The material is located between the auxiliary structures and the conductive oxide pads.如請求項4所述的電子裝置，其中各該第二金屬接墊被多個互相分離的該些第一伸縮材料所圍繞。The electronic device according to claim 4, wherein each of the second metal pads is surrounded by a plurality of the first elastic materials separated from each other.如請求項4所述的電子裝置，更包括：多個第二伸縮材料，分別填入多個第二開口中，其中該些第二開口分別位於該些凹槽的至少一側，且該些第二開口從該介電層的頂面延伸至該軟性基板的頂面。The electronic device according to claim 4, further comprising: a plurality of second stretchable materials respectively filled in a plurality of second openings, wherein the second openings are respectively located on at least one side of the grooves, and the The second opening extends from the top surface of the dielectric layer to the top surface of the flexible substrate.如請求項7所述的電子裝置，其中該些第二伸縮材料的熱膨脹係數小於該些第一伸縮材料的熱膨脹係數。The electronic device according to claim 7, wherein the coefficient of thermal expansion of the second elastic materials is smaller than the coefficient of thermal expansion of the first elastic materials.如請求項7所述的電子裝置，其中些第二伸縮材料為遇熱收縮的材料。The electronic device according to claim 7, wherein some of the second stretchable materials are materials that shrink when exposed to heat.如請求項1所述的電子裝置，其中至少一該引腳的側面具有一凹部，且至少一該導電氧化物接墊的側面具有一凸部，該凸部填入該凹部。The electronic device according to claim 1, wherein at least one side surface of the pin has a concave portion, and at least one side surface of the conductive oxide pad has a convex portion, and the convex portion fills the concave portion.如請求項1所述的電子裝置，更包括：多個導電粒子，位於該些導電氧化物接墊與該些引腳之間。The electronic device according to claim 1, further comprising: a plurality of conductive particles located between the conductive oxide pads and the pins.

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