本發明涉及一種半導體處理裝置，尤其涉及一種噴淋頭及包含所述噴淋頭之電漿處理裝置。The present invention relates to a semiconductor processing apparatus, and more particularly to a shower head and a plasma processing apparatus including the same.
在現有電漿處理裝置中，大多是藉由在反應腔室中形成的電漿對基板進行電漿處理。裝置中通常將噴淋頭作為上極板、載物台作為下電極來使用。進行電漿處理時，噴淋頭先以噴淋狀將氣體輸送至載物台上之基板，真空泵再將從載物台周圍之氣體均勻的排出，然後控壓裝置進行穩壓處理，最後在噴淋頭上極板和載物台下電極之間施加電壓，以形成電漿對基板進行等離子處理。In the conventional plasma processing apparatus, the substrate is mostly subjected to plasma treatment by plasma formed in the reaction chamber. In the apparatus, a shower head is generally used as an upper plate and a stage as a lower electrode. When the plasma treatment is performed, the sprinkler first delivers the gas to the substrate on the stage by spraying, and the vacuum pump uniformly discharges the gas around the stage, and then the pressure regulating device performs the voltage stabilization treatment, and finally A voltage is applied between the upper plate of the shower head and the lower electrode of the stage to form a plasma to plasma treat the substrate.
在上述製程過程中，因所使用之噴淋頭之通氣孔之結構各處都相同，所以氣體運輸方向是由載物台中心向週邊輸送，這樣容易造成載物台中心之氣體與週邊氣體分佈不均，從而造成電漿分佈的不均勻，進而導致反應氣體在基板上之沉積速率不均勻。In the above process, since the structure of the vent hole of the sprinkler used is the same everywhere, the gas transport direction is transported from the center of the stage to the periphery, which easily causes gas and peripheral gas distribution in the center of the stage. The unevenness causes uneven distribution of the plasma, which in turn causes the deposition rate of the reaction gas on the substrate to be uneven.
為了避免電漿分佈的不均勻，習知技術US6793733公開了一種氣體分配噴頭，藉由在噴淋頭上設置氣體入口部之面板和氣體出口部，且出口部分是細長的狹縫，狹縫的長至少為面板厚度的一半，以控制噴淋氣體之均勻性，所述方法雖然在一定程度上減少了基板上之斑點及條紋，但是均勻分佈之狹縫，還是會造成反應氣體在基板上之沉積速率不均勻之問題。In order to avoid uneven distribution of the plasma, the prior art US Pat. No. 6,793,373 discloses a gas distribution nozzle which is provided with a gas inlet portion and a gas outlet portion on the shower head, and the outlet portion is an elongated slit, the length of the slit At least half of the thickness of the panel to control the uniformity of the spray gas. Although the method reduces the spots and streaks on the substrate to a certain extent, the uniformly distributed slits still cause deposition of the reaction gas on the substrate. The problem of uneven rate.
目前，隨著半導體技術之不斷發展，所需處理基板之面積會不斷增大，傳統噴淋頭之處理方式所導致之薄膜均勻性降低問題會越發顯著。因此，需要設計一種新型的噴淋頭，提高反應氣體在基板上之沉積速率均勻性。At present, with the continuous development of semiconductor technology, the area of the substrate to be processed will continue to increase, and the problem of the uniformity of the film caused by the processing method of the conventional shower head will become more and more significant. Therefore, it is necessary to design a new type of shower head to improve the deposition rate uniformity of the reaction gas on the substrate.
為了克服上述背景技術之缺陷，本發明提供一種噴淋頭及其電漿處理裝置以提高反應氣體在基板上之沉積速率均勻性。In order to overcome the above-mentioned background art, the present invention provides a shower head and a plasma processing apparatus thereof for improving uniformity of deposition rate of a reaction gas on a substrate.
為瞭解決上述技術問題本發明提供了一種噴淋頭，用於半導體電漿處理裝置，半導體電漿處理裝置包括反應腔及設置於反應腔中之載物台，載物台用以承載基板，噴淋頭相對於載物台設置於反應腔中，用以將反應氣體沿著基板之方向噴淋，噴淋頭包括用以將反應氣體通入反應腔的噴淋頭通孔，噴淋頭通孔包括第一通孔與第二通孔，第一通孔具有第一流阻，第二通孔具有第二流阻，第一流阻不等於第二流阻，第一通孔在噴淋頭中所形成之區域位置及區域形狀不同於第二通孔在噴淋頭中所形成之區域位置及區域形狀以均勻反應氣體在基板上之沉積速率。In order to solve the above technical problem, the present invention provides a shower head for a semiconductor plasma processing apparatus. The semiconductor plasma processing apparatus includes a reaction chamber and a stage disposed in the reaction chamber, and the stage is used to carry the substrate. The sprinkler is disposed in the reaction chamber relative to the stage for spraying the reaction gas along the direction of the substrate, and the sprinkler includes a shower head through hole for introducing the reaction gas into the reaction chamber, the sprinkler The through hole includes a first through hole and a second through hole, the first through hole has a first flow resistance, the second through hole has a second flow resistance, the first flow resistance is not equal to the second flow resistance, and the first through hole is in the shower head The position and the shape of the region formed in the region are different from the shape of the region and the region of the second via hole formed in the shower head to uniformly deposit the deposition rate of the gas on the substrate.
較佳的，噴淋頭通孔包括進氣端及與進氣端相連通之出氣口，進氣端沿著垂直氣體流向之方向具有進氣橫截面積，出氣口沿著垂直氣體流向之方向具有出氣橫截面積，進氣橫截面積大於出氣橫截面積，進氣橫截面積為0.00785-7.85平方毫米，出氣橫截面積為0.00785-0.785平方毫米，進氣端長度與出氣口長度之和為5-20mm，進氣端長度範圍為2-18mm，出氣口長度範圍為2-18mm。Preferably, the shower head through hole includes an intake end and an air outlet communicating with the intake end, and the intake end has an intake cross-sectional area along a direction of vertical gas flow, and the air outlet is along a direction of vertical gas flow. It has an outlet cross-sectional area, the intake cross-sectional area is larger than the outlet cross-sectional area, the intake cross-sectional area is 0.00785-7.85 square mm, the outlet cross-sectional area is 0.00785-0.785 square mm, and the sum of the intake end length and the outlet length It is 5-20mm, the length of the inlet end is 2-18mm, and the length of the outlet is 2-18mm.
較佳的，第一通孔具有第一進氣端和第一出氣口，第一進氣端和第一出氣口相連通，第一進氣端沿著垂直氣體流向之方向具有第一進氣橫截面積，第一進氣端沿著垂直氣體流向之方向具有第一出氣橫截面積，第一進氣橫截面積大於第一出氣橫截面積。Preferably, the first through hole has a first intake end and a first air outlet, the first inletThe gas end is in communication with the first gas outlet, the first gas inlet end has a first gas inlet cross-sectional area along a direction of the vertical gas flow direction, and the first gas inlet end has a first gas outlet cross-sectional area along a direction of the vertical gas flow direction. The first intake cross-sectional area is greater than the first exhaust cross-sectional area.
較佳的，第二通孔具有第二進氣端和第二出氣口，第二進氣端和第二出氣口相連通，第二進氣端沿著垂直氣體流向之方向具有第二進氣橫截面積，第二出氣口沿著垂直氣體流向之方向具有第二出氣橫截面積，第二進氣橫截面積大於第二出氣橫截面積。Preferably, the second through hole has a second intake end and a second air outlet, the second intake end is in communication with the second air outlet, and the second intake end has a second intake in a direction perpendicular to the flow direction of the gas. The cross-sectional area, the second air outlet has a second air outlet cross-sectional area along the direction of the vertical gas flow, and the second air intake cross-sectional area is larger than the second air-cut cross-sectional area.
較佳的，第一出氣口之長度與第一通孔之長度具有第一長度比值，第二出氣口與第二通孔具有第二長度比值，第一長度比值不等於第二長度比值。Preferably, the length of the first air outlet has a first length ratio with the length of the first through hole, and the second air outlet and the second through hole have a second length ratio, and the first length ratio is not equal to the second length ratio.
較佳的，第一進氣橫截面積與第一出氣橫截面積具有第一面積比值，第二進氣橫截面積與第二出氣橫截面積具有第二面積比值，第一面積比值不等於第二面積比值。Preferably, the first intake cross-sectional area has a first area ratio with the first outlet cross-sectional area, and the second intake cross-sectional area and the second outgoing cross-sectional area have a second area ratio, the first area ratio is not equal to The second area ratio.
較佳的，噴淋頭還包括第三通孔，第三通孔具有第三進氣端和第三出氣口，第三進氣端和第三出氣口相連通，第三進氣端沿著垂直氣體流向之方向具有第三進氣橫截面積，第三出氣口沿著垂直氣體流向之方向具有第三出氣橫截面積，第三進氣橫截面積大於第三出氣橫截面積。Preferably, the shower head further includes a third through hole having a third intake end and a third air outlet, wherein the third intake end is in communication with the third air outlet, and the third intake end is along The direction of the vertical gas flow has a third intake cross-sectional area, and the third air outlet has a third exhaust cross-sectional area along the direction of the vertical gas flow, and the third intake cross-sectional area is larger than the third exhaust cross-sectional area.
較佳的，第三出氣口之長度與第三通孔之長度具有第三長度比值，第一出氣口之長度與第一通孔之長度具有第一長度比值，第二出氣口之長度與第二通孔之長度具有第二長度比值，第三長度比值、第一長度比值與第二長度比值互不相等。Preferably, the length of the third air outlet has a third length ratio with the length of the third through hole, the length of the first air outlet has a first length ratio with the length of the first through hole, and the length of the second air outlet is the same as the length The length of the two through holes has a second length ratio, and the third length ratio, the first length ratio and the second length ratio are not equal to each other.
較佳的，第三進氣橫截面積與第三出氣橫截面積具有第三面積比值，第三面積比值、第一面積比值與第二面積比值互不相等。Preferably, the third intake cross-sectional area and the third exhaust cross-sectional area have a third area ratio, and the third area ratio, the first area ratio and the second area ratio are not equal to each other.
較佳的，噴淋頭具有圓形之出氣面，出氣面包括第一區域、第二區域和第三區域，第一區域為第一內嵌三角形面，第二區域為第二內嵌三角形面，第三區域為第二內嵌三角形外之弧面，第一通孔在出氣面上形成複數個第一出氣口，第一出氣口形成於第一區域，第二通孔在出氣面上形成複數個第二出氣口，第二出氣口形成於第二區域，第三通孔在出氣面上形成複數個第三出氣口，第三出氣口形成於第三區域。Preferably, the shower head has a circular outlet surface, and the outlet surface comprises a first region, a second region and a third region, the first region is a first inlaid triangular surface, and the second region is a second inscribed triangular surface The third area is a curved surface outside the second inlaid triangle, and the first through hole forms a plurality of first air outlets on the air outlet surface, the first air outlet is formed in the first region, and the second through hole is formed on the air outlet surface The plurality of second air outlets are formed in the second region, the third through holes form a plurality of third air outlets on the air outlet surface, and the third air outlets are formed in the third region.
較佳的，噴淋頭具有圓形之出氣面，出氣面包括第一區域和第二區域，第一區域為內嵌三角形面，第二區域為內嵌三角形外之弧面，第一通孔在出氣面上形成複數個第一出氣口，第一出氣口形成於第一區域，第二通孔在出氣面上形成複數個第二出氣口，第二出氣口形成於第二區域。此外，本發明還提供了一種設置之噴淋頭之電漿處理裝置，電漿處理裝置用於以化學氣相沉積之方法在基板上沉積薄膜，基板為矽片。Preferably, the shower head has a circular outlet surface, and the outlet surface comprises a first region and a second region, the first region is an inlaid triangular surface, and the second region is an arc surface embedded with a triangle, the first through hole A plurality of first air outlets are formed on the air outlet surface, the first air outlet is formed in the first region, the second through hole forms a plurality of second air outlets on the air outlet surface, and the second air outlet is formed in the second region. In addition, the present invention also provides a plasma processing apparatus for a shower head for depositing a thin film on a substrate by chemical vapor deposition, the substrate being a wafer.
較佳的，其進一步包括：設置在反應腔下方之排氣系統，排氣系統包括控壓單元和排氣泵，控壓單元用以控制腔內之氣壓，所述之反應腔具有側壁，側壁設置有反應腔閥門，反應腔閥門與傳輸腔相連接，用以將傳輸腔內之基板經由反應閥門傳輸至反應腔內。Preferably, the method further comprises: an exhaust system disposed under the reaction chamber, the exhaust system includes a pressure control unit and an exhaust pump, and the pressure control unit is configured to control the air pressure in the chamber, the reaction chamber has a side wall and a side wall A reaction chamber valve is disposed, and the reaction chamber valve is connected to the transfer chamber for transferring the substrate in the transfer chamber to the reaction chamber via the reaction valve.
較佳的，在噴淋頭和載物台間施加電壓形成電漿，用於對基板進行電漿處理。Preferably, a voltage is applied between the showerhead and the stage to form a plasma for plasma treatment of the substrate.
與習知技術相比，本發明之噴淋頭及其電漿處理裝置，藉由在噴淋頭設有具有第一流阻之第一通孔和具有第二流阻之第二通孔，且第一流阻不等於第二流阻，第一通孔在噴淋頭中所形成之區域位置及區域形狀不同於第二通孔在噴淋頭中所形成之區域位置及區域形狀以提高反應氣體在基板上之沉積速率均勻性。Compared with the prior art, the shower head of the present invention and the plasma processing apparatus thereof are provided with a first through hole having a first flow resistance and a second through hole having a second flow resistance in the shower head, and The first flow resistance is not equal to the second flow resistance, and the position and the shape of the region formed by the first through hole in the shower head are different from the shape and the shape of the region formed by the second through hole in the shower head to increase the reaction gas. The deposition rate uniformity on the substrate.
100‧‧‧電漿處理裝置100‧‧‧ Plasma processing unit
101‧‧‧反應腔101‧‧‧Reaction chamber
102‧‧‧側壁102‧‧‧ side wall
120‧‧‧排氣系統120‧‧‧Exhaust system
1201‧‧‧排氣泵1201‧‧‧Exhaust pump
1202‧‧‧控壓單元1202‧‧‧Control unit
130、230、330‧‧‧噴淋頭130, 230, 330‧‧‧ sprinkler head
131、231、331‧‧‧出氣面131, 231, 331‧‧‧ gas outlet
140、340‧‧‧通孔140, 340‧‧‧through holes
141、241、341‧‧‧第一通孔141, 241, 341‧‧‧ first through hole
1411、2411、3411‧‧‧第一進氣端1411, 2411, 3411‧‧‧ first intake end
1412、2412、3412‧‧‧第一出氣口1412, 2412, 3412‧‧‧ first air outlet
142、242、342‧‧‧第二通孔142, 242, 342‧‧‧ second through hole
1421、2421、3421‧‧‧第二進氣端1421, 2421, 3421‧‧‧ second intake end
1422、2422、3422‧‧‧第二出氣口1422, 2422, 3422‧‧‧ second air outlet
343‧‧‧第三通孔343‧‧‧ third through hole
3431‧‧‧第三進氣端3431‧‧‧ third intake end
3432‧‧‧第三出氣口3432‧‧‧ third air outlet
150‧‧‧載物台150‧‧‧stage
160‧‧‧基板160‧‧‧Substrate
170‧‧‧反應腔閥門170‧‧‧Reaction chamber valve
180‧‧‧傳輸腔180‧‧‧Transmission chamber
A1、A2‧‧‧內嵌三角形面A1, A2‧‧‧ embedded triangle face
B1、B3‧‧‧弧面B1, B3‧‧‧ curved surface
A3‧‧‧第一內嵌三角形面A3‧‧‧First inline triangular face
C‧‧‧第二內嵌三角形面C‧‧‧Second inline triangular face
11、12、21、22、31、32‧‧‧曲線11, 12, 21, 22, 31, 32‧‧‧ curves
第1圖是本發明之電漿處理裝置之結構示意圖。Fig. 1 is a schematic view showing the structure of a plasma processing apparatus of the present invention.
第2圖是第1圖所示之電漿處理裝置之噴淋頭之佈置示意圖。Fig. 2 is a schematic view showing the arrangement of the shower head of the plasma processing apparatus shown in Fig. 1.
第3圖是第2圖所示之噴淋頭通孔之佈置示意圖。Fig. 3 is a schematic view showing the arrangement of the shower head through holes shown in Fig. 2.
第4圖是第1圖所示之電漿處理裝置之噴淋頭之實施例一之結構示意圖。Fig. 4 is a schematic view showing the structure of the first embodiment of the shower head of the plasma processing apparatus shown in Fig. 1.
第5圖是第4圖所示之噴淋頭之第一通孔和第二通孔之結構示意圖。Fig. 5 is a schematic view showing the structure of the first through hole and the second through hole of the shower head shown in Fig. 4.
第6圖是第4圖所示之噴淋頭在第一種電漿處理製程中形成之沉積速率分佈之影響示意圖。Figure 6 is a graphical representation of the effect of the deposition rate profile of the showerhead shown in Figure 4 during the first plasma treatment process.
第7圖是第1圖所示之電漿處理裝置之噴淋頭之實施例二之結構示意圖。Fig. 7 is a schematic view showing the structure of a second embodiment of the shower head of the plasma processing apparatus shown in Fig. 1.
第8圖是第7圖所示之噴淋頭之第一通孔和第二通孔之結構示意圖。Figure 8 is a schematic view showing the structure of the first through hole and the second through hole of the shower head shown in Fig. 7.
第9圖是第7圖所示之噴淋頭在第二種電漿處理製程中形成之沉積速率分佈之影響示意圖。Figure 9 is a graphical representation of the effect of the deposition rate profile formed by the showerhead shown in Figure 7 during the second plasma processing process.
第10圖是第1圖所示之電漿處理裝置之噴淋頭之實施例三之結構示意圖。Fig. 10 is a schematic view showing the structure of a third embodiment of the shower head of the plasma processing apparatus shown in Fig. 1.
第11圖是第10圖所示之噴淋頭之第一通孔、第二通孔和第三通孔之結構示意圖。Figure 11 is a schematic view showing the structure of the first through hole, the second through hole and the third through hole of the shower head shown in Fig. 10.
第12圖是第10圖所示之噴淋頭在第三種電漿處理製程中形成之沉積速率分佈之影響示意圖。Fig. 12 is a view showing the influence of the deposition rate distribution formed by the shower head shown in Fig. 10 in the third plasma treatment process.
為了更清楚地說明本發明實施例或現有技術中之技術方案，下面將對照發明圖式說明本發明之具體實施方式。顯而易見地，下面描述中之圖式僅僅是本發明之一些實施例，對於本領域之通常知識者而言，在不付出進步性勞動的前提下，還可以根據這些圖式獲得其他的圖式，並獲得其他的實施方式。In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the specific embodiments of the present invention will be described below with reference to the drawings. Obviously, the drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other drawings according to these drawings without paying progressive labor. And get other implementations.
為使圖面簡潔，各圖中只示意性地表示出了與本發明相關的部分，它們並不代表其作為產品的實際結構。另外，以使圖面簡潔便於理解，在有些圖中具有相同結構或功能的部件，僅示意性地繪示了其中的一個，或僅標出了其中的一個。在本文中，“一個”不僅表示“僅此一個”，也可以表示“多於一個”之情形。In order to simplify the drawings, only the parts related to the present invention are schematically shown in the drawings, and they do not represent the actual structure of the product. In addition, in order to make the drawings simple and easy to understand, components having the same structure or function in some of the figures are only schematically illustrated, or only one of them is marked. In this paper, "a" means not only "only this one" but also "more than one".
參考第1圖所示，本發明之半導體電漿處理裝置100，具體包括：反應腔101及設置於反應腔中之載物台150，載物台150用以承載基板160，噴淋頭130相對於載物台150設置於反應腔101中，用以將反應氣體沿著基板160的方向噴淋。噴淋頭130和載物台150間施加電壓形成電漿，用於對基板160進行等離子處理。Referring to FIG. 1 , the semiconductor plasma processing apparatus 100 of the present invention specifically includes a reaction chamber 101 and a stage 150 disposed in the reaction chamber. The stage 150 is used to carry the substrate 160, and the shower head 130 is opposite. The stage 150 is disposed in the reaction chamber 101 for spraying the reaction gas in the direction of the substrate 160. A voltage is applied between the shower head 130 and the stage 150 to form a plasma for plasma treatment of the substrate 160.
在本發明之某些具體實施方式中，電漿處理裝置100用於以化學氣相沉積之方法在基板160上沉積薄膜，基板160為矽片。矽片160之直徑為300毫米。In some embodiments of the invention, the plasma processing apparatus 100 is used to deposit a thin film on a substrate 160 by chemical vapor deposition, the substrate 160 being a wafer. The cymbal 160 has a diameter of 300 mm.
在本發明之某些具體實施方式中，反應腔101設置在反應腔下方之排氣系統120，排氣系統120包括控壓單元1202和排氣泵1201，控壓單元1202用以控制腔內之氣壓，之反應腔101具有側壁102，側壁102設置有反應腔閥門170，反應腔閥門170與傳輸腔180相連接，用以將傳輸腔180內之基板160經由反應腔閥門170傳輸至反應腔101內。In some embodiments of the invention, the reaction chamber 101 is disposed in an exhaust system 120 below the reaction chamber, and the exhaust system 120 includes a pressure control unit 1202 and an exhaust pump.1201, the pressure control unit 1202 is used to control the air pressure in the cavity, the reaction chamber 101 has a side wall 102, the side wall 102 is provided with a reaction chamber valve 170, and the reaction chamber valve 170 is connected to the transmission chamber 180 for use in the transmission chamber 180. The substrate 160 is transferred into the reaction chamber 101 via the reaction chamber valve 170.
參考第2圖和第3圖所示，本發明之電漿處理裝置100之噴淋頭130整體結構為圓盤形狀，噴淋頭130包括噴淋頭通孔，噴淋頭通孔佈置以圓盤中心向外呈等邊三角形陣列分佈1301，且噴淋頭通孔之間間距離為3-8mm，在本發明之較優之實施方式為5mm。噴淋頭通孔包括第一通孔與第二通孔。在本發明之某些其他實施方式中，噴淋頭通孔還包括第三通孔。噴淋頭通孔包括進氣端和出氣口，進氣端及與出氣口相連通，進氣端沿著垂直氣體流向之方向具有進氣橫截面積，出氣口沿著垂直氣體流向之方向具有出氣橫截面積，進氣橫截面積大於出氣橫截面積，進氣橫截面積為0.00785-7.85平方毫米，出氣橫截面積為0.00785-0.785平方毫米，進氣端長度與出氣口長度之和為5-20mm，其中，進氣端長度範圍為2-18mm，出氣口長度範圍為2-18mm。具體地，噴淋頭通孔之結構和佈置具有多種實施方式，容後詳述。Referring to FIGS. 2 and 3, the shower head 130 of the plasma processing apparatus 100 of the present invention has an overall structure of a disk shape, and the shower head 130 includes a shower head through hole, and the shower head through hole is arranged in a circle. The center of the disk is outwardly arranged in an equilateral triangle array 1301, and the distance between the showerhead through holes is 3-8 mm, which is 5 mm in the preferred embodiment of the present invention. The shower head through hole includes a first through hole and a second through hole. In certain other embodiments of the invention, the showerhead through hole further includes a third through hole. The sprinkler through hole includes an intake end and an air outlet, the intake end is connected to the air outlet, and the intake end has an intake cross-sectional area along a direction of the vertical gas flow, and the air outlet has a direction along the vertical gas flow direction. The cross-sectional area of the outlet is larger than the cross-sectional area of the outlet, the cross-sectional area of the inlet is 0.00785-7.85 square mm, and the cross-sectional area of the outlet is 0.00785-0.785 square mm. The sum of the length of the inlet end and the length of the outlet is 5-20mm, wherein the inlet end length ranges from 2-18mm, and the outlet port length ranges from 2-18mm. Specifically, the structure and arrangement of the showerhead through holes have various embodiments, which will be described in detail later.
實施例一Embodiment 1
參考第4圖所示，在本實施例中，噴淋頭130包括噴淋頭通孔140以將反應氣體通入反應腔101，噴淋頭通孔140包括第一通孔141與第二通孔142，可參考第5圖，第一通孔141具有第一流阻，第二通孔142具有第二流阻，第一流阻不等於第二流阻以均勻反應氣體在基板上之沉積速率。Referring to FIG. 4, in the present embodiment, the shower head 130 includes a showerhead through hole 140 for introducing a reaction gas into the reaction chamber 101, and the shower head through hole 140 includes a first through hole 141 and a second through hole. The hole 142 can refer to FIG. 5. The first through hole 141 has a first flow resistance, and the second through hole 142 has a second flow resistance. The first flow resistance is not equal to the second flow resistance to uniformly deposit a deposition rate of the reaction gas on the substrate.
在本發明某些具體實施方式中，如第5圖所示，第一通孔141具有第一進氣端1411和第一出氣口1412，第一進氣端1411和第一出氣口1412相連通，第一進氣端1411沿著垂直氣體流向之方向具有第一進氣橫截面積，第一進氣橫截面積的為圓形，直徑為2毫米，第一進氣端沿著垂直氣體流向之方向具有第一出氣橫截面積，第一出氣橫截面積的為圓形，直徑為0.8毫米，第一進氣橫截面積大於第一出氣橫截面積，第一進氣橫截面積與第一出氣橫截面積比值為第一面積比值，第一面積比值為2.5。第一出氣口1412之長度與第一通孔之長度141具有第一長度比值，第一長度比值為70%，即，第一出氣口長度與第一進氣端長度之和為14毫米，第一出氣口長度為9.8毫米，第一進氣端長度為4.2毫米。In some embodiments of the present invention, as shown in FIG. 5, the first through hole 141 has a first intake end 1411 and a first air outlet 1412, a first intake end 1411 and a firstThe air outlet 1412 is in communication. The first air inlet end 1411 has a first air intake cross-sectional area along a direction of vertical gas flow. The first air intake cross-sectional area is circular and has a diameter of 2 mm. The first air inlet end Having a first outflow cross-sectional area along a direction perpendicular to the flow direction of the gas, the first outlet cross-sectional area is circular, having a diameter of 0.8 mm, the first intake cross-sectional area being larger than the first outlet cross-sectional area, the first intake The ratio of the cross-sectional area to the first outflow cross-sectional area is a first area ratio, and the first area ratio is 2.5. The length of the first air outlet 1412 has a first length ratio to the length 141 of the first through hole, and the first length ratio is 70%, that is, the sum of the length of the first air outlet and the length of the first air inlet is 14 mm, One outlet has a length of 9.8 mm and the first inlet has a length of 4.2 mm.
在本發明某些具體實施方式中，如第5圖所示，第二通孔142具有第二進氣端1421和第二出氣口1422，第二進氣端1421和第二出氣口1422相連通，第二進氣端1421沿著垂直氣體流向之方向具有第二進氣橫截面積，第二進氣橫截面積的為圓形，直徑為2毫米，第二進氣端沿著垂直氣體流向之方向具有第二出氣橫截面積，第二出氣橫截面積的為圓形，直徑為0.8毫米，第二進氣橫截面積大於第二出氣橫截面積，第二進氣橫截面積與第二出氣橫截面積比值為第二面積比值，第二面積比值為2.5，等於第一面積比值。第二出氣口1422之長度與第二通孔之長度142具有第二長度比值，第二長度比值為50%，即第二出氣口長度與第二進氣端長度之和為14毫米，第二出氣口長度為7毫米，第二進氣端長度為7毫米。第一通孔141和第二通孔142是藉由第一長度比值和所示第二長度比值來改變相應孔之流阻，進而改變藉由相應孔之流量，以實現相應基板160位置薄膜沉積速率之改變。In some embodiments of the present invention, as shown in FIG. 5, the second through hole 142 has a second intake end 1421 and a second air outlet 1422, and the second intake end 1421 and the second air outlet 1422 are connected. The second intake end 1421 has a second intake cross-sectional area along the direction of the vertical gas flow, the second intake cross-sectional area is circular, the diameter is 2 mm, and the second intake end is along the vertical gas flow direction. The direction has a second outlet cross-sectional area, the second outlet cross-sectional area is circular, the diameter is 0.8 mm, the second intake cross-sectional area is greater than the second outlet cross-sectional area, and the second intake cross-sectional area is The ratio of the two outlet cross-sectional areas is the second area ratio, and the second area ratio is 2.5, which is equal to the first area ratio. The length of the second air outlet 1422 has a second length ratio with the length 142 of the second through hole, and the second length ratio is 50%, that is, the sum of the length of the second air outlet and the length of the second air inlet is 14 mm, and the second The outlet port has a length of 7 mm and the second inlet end has a length of 7 mm. The first through hole 141 and the second through hole 142 change the flow resistance of the corresponding hole by the first length ratio and the second length ratio, thereby changing the flow rate of the corresponding hole to realize the film deposition of the corresponding substrate 160. The change in rate.
在本發明之某些具體實施方式中，通孔之佈置不同也會對薄膜沉積速率有所影響。如第4圖及第5圖所示，噴淋頭130具有圓形之出氣面131，出氣面131包括內嵌三角形面A1與內嵌三角形面外之弧面B1，第一通孔141在出氣面131上形成複數個第一出氣口1412，第一出氣口1412設置於弧面B1，第二通孔142在出氣面上形成複數個第二出氣口1422，第二出氣口設置於內嵌三角形面A1。弧面B1占鋪設有通孔之噴淋頭之出氣面面積的25%，內嵌三角形面A1占鋪設有通孔之噴淋頭之出氣面面積的75%。In some embodiments of the invention, the arrangement of the vias will also have an effect on the film deposition rate. As shown in FIGS. 4 and 5, the shower head 130 has a circular outlet surface 131, and the outlet surface 131 includes an arc with an inlaid triangular surface A1 and an inlaid triangular surface.The first through hole 141 forms a plurality of first air outlets 1412 on the air outlet surface 131. The first air outlet 1412 is disposed on the arc surface B1, and the second through hole 142 forms a plurality of second air outlets 1422 on the air outlet surface. The second air outlet is disposed on the inlaid triangular surface A1. The curved surface B1 occupies 25% of the area of the outlet surface of the shower head with the through hole, and the embedded triangular surface A1 occupies 75% of the area of the outlet surface of the shower head with the through hole.
本發明之某些實施方式中，長度比值越大該通氣孔之流阻越大，對應之氣流量越小。In some embodiments of the invention, the greater the length ratio, the greater the flow resistance of the vent, and the smaller the corresponding gas flow.
如第6圖所示，該圖是以矽片160(如第1圖所示)之圓心為原點，X軸是沿著矽片徑向距離矽片邊3mm之座標(由-147mm-147mm)，y軸是矽片表面沿著徑向方向經過等離子處理之沉積速率。As shown in Fig. 6, the figure is based on the center of the cymbal 160 (as shown in Fig. 1), and the X-axis is a coordinate of 3 mm along the radial direction of the cymbal (by -147 mm-147 mm). The y-axis is the deposition rate of the surface of the ruthenium through the plasma treatment in the radial direction.
在第一種電漿處理製程中，第一種等離子製程載物台溫度為400℃，工作壓力為0.9托，上下電極間距為12毫米，射頻功率為280瓦，矽烷流量為350毫升每分鐘，一氧化二氮氣體流量為5000毫升每分鐘。曲線11是噴淋頭通孔長度比值全部都相同之沉積速率趨勢線。因其噴淋頭通孔長度比值都相同，所以通孔流阻都相同，進而通孔所有之氣流量都相同，但是因為其在噴淋頭之位置對應處理之基板之位置不同，所以導致所對應位置之沉積速率不同，如沉積速率趨勢線11所示，經過等離子處理之沉積速率沿著矽片徑向呈現由中心向邊緣逐漸變大，在靠近邊緣處沉積速率又有急劇變大之趨勢，在矽片上之沉積速率非常的不均勻。In the first plasma processing process, the first plasma process stage temperature is 400 ° C, the working pressure is 0.9 Torr, the upper and lower electrode spacing is 12 mm, the RF power is 280 watts, and the decane flow rate is 350 ml per minute. The nitrous oxide gas flow rate was 5000 ml per minute. Curve 11 is the deposition rate trend line for which the showerhead through hole length ratios are all the same. Because the ratio of the length of the through-hole of the sprinkler is the same, the flow resistance of the through-hole is the same, and all the flow rates of the through-hole are the same, but because the position of the substrate corresponding to the position of the shower head is different, The deposition rate of the corresponding position is different. As shown by the deposition rate trend line 11, the deposition rate after plasma treatment gradually increases from the center to the edge along the radial direction of the slab, and the deposition rate increases sharply near the edge. The deposition rate on the bracts is very uneven.
進一步的，請一併參閱第4圖及第5圖，在第一種電漿處理製程中，曲線12代表本實施例中噴淋頭130包括第一通孔141和第二通孔142之沉積速率趨勢線。因第一長度比值大於第二長度比值，所以第一通孔141之流阻大於第二通孔142之流阻，進而第一通孔141之氣流量小於第二通孔142之氣流量，最終導致第一通孔所在之相應位置之薄膜沉積速率小於第二通孔之所在之相應位置之薄膜沉積速率。Further, please refer to FIG. 4 and FIG. 5 together. In the first plasma processing process, curve 12 represents the deposition of the showerhead 130 including the first through hole 141 and the second through hole 142 in this embodiment. Rate trend line. Because the first length ratio is greater than the second length ratio,The flow resistance of the first through hole 141 is greater than the flow resistance of the second through hole 142, and the air flow rate of the first through hole 141 is smaller than the air flow of the second through hole 142, and finally the film deposition of the corresponding position of the first through hole is caused. The rate is less than the film deposition rate at the corresponding location where the second via is located.
具體的，本實施方式中，藉由對噴淋頭130第一通孔141和第二通孔142分別進行如上所述之結構設計及區域佈置，使得矽片在經過噴淋頭等離子處理後，矽片沉積速率沿著矽片160徑向由中心向邊緣方向表現的很均勻。Specifically, in the embodiment, the first through hole 141 and the second through hole 142 of the shower head 130 are respectively subjected to the structural design and the regional arrangement as described above, so that the cymbal is subjected to plasma treatment through the shower head. The bract deposition rate is uniform along the radial direction of the cymbal 160 from the center to the edge.
實施例二Embodiment 2
參閱第7圖及第8圖，本實施例所述之噴淋頭230與實施例一所述之噴淋頭130之區別在於噴淋頭之通孔240結構或佈置不同。噴淋頭之通孔240包括第一通孔241與第二通孔242，第一通孔241具有第一流阻，第二通孔242具有第二流阻，第一流阻不等於第二流阻以均勻反應氣體在基板上之沉積速率。Referring to Figures 7 and 8, the showerhead 230 of the present embodiment differs from the showerhead 130 of the first embodiment in that the through-holes 240 of the showerhead are different in construction or arrangement.The through hole 240 of the shower head includes a first through hole 241 and a second through hole 242, the first through hole 241 has a first flow resistance, and the second through hole 242 has a second flow resistance, the first flow resistance is not equal to the second flow resistance The deposition rate of the homogeneous reaction gas on the substrate.
如第8圖所示，其中，本實施例中之第一通孔241與實施例一中第一通孔141結構相同，但是佈置不同，容後詳述。As shown in FIG. 8, the first through hole 241 in this embodiment has the same structure as the first through hole 141 in the first embodiment, but the arrangement is different, and will be described in detail later.
如第8圖所示，第二通孔之長度比例與實施例一中第二通孔242相同，但面積比例不同。具體的，第二通孔242具有第二進氣端2421和第二出氣口2422，第二進氣端2421和第二出氣口2422相連通，第二進氣端2421沿著垂直氣體流向之方向具有第二進氣橫截面積，第二進氣橫截面積的為圓形，直徑為2.1毫米，第二進氣端沿著垂直氣體流向之方向具有第二橫截面積，第二出氣橫截面積為圓形，直徑為0.7毫米，第二進氣橫截面積大於第二出氣橫截面積，第二進氣橫截面積與第二出氣橫截面積比值為第二面積比值，第二面積比值為3，不等於第一面積比值2.5。As shown in Fig. 8, the length ratio of the second through holes is the same as that of the second through holes 242 in the first embodiment, but the area ratio is different. Specifically, the second through hole 242 has a second intake end 2421 and a second air outlet 2422, the second intake end 2421 and the second air outlet 2422 are in communication, and the second intake end 2421 is in the direction of the vertical gas flow. Having a second intake cross-sectional area, the second intake cross-sectional area is circular, having a diameter of 2.1 mm, and the second intake end has a second cross-sectional area along the direction of the vertical gas flow, and the second exhaust cross-section The area is circular, the diameter is 0.7 mm, the second intake cross-sectional area is larger than the second outlet cross-sectional area, and the ratio of the second intake cross-sectional area to the second outlet cross-sectional area is the second area ratio, and the second area ratio 3, not equal to the first area ratio of 2.5.
本實施方式中，通孔之區域佈置不同也會對薄膜沉積速率有所影響。如第7圖及第8圖所示，噴淋頭230具有圓形之出氣面231，出氣面包括內嵌三角形面A2與內嵌三角形外之弧面B2，第一通孔241在出氣面上231形成複數個第一出氣口2412，第一出氣口241設置於內嵌三角形面A2，第二通孔242在出氣面上形成複數個第二出氣口2422，第二出氣口設置於弧面B2。內嵌三角形面A2占鋪設有通孔之噴淋頭之出氣面面積的25%，弧面B2占鋪設有通孔之噴淋頭之出氣面面積的75%。In this embodiment, different regional arrangement of the via holes may also affect the film deposition rate. As shown in FIG. 7 and FIG. 8, the shower head 230 has a circular air outlet surface 231, and the air outlet surface includes an inscribed triangular surface A2 and a curved surface B2 outside the embedded triangle. The first through hole 241 is on the air outlet surface. 231, a plurality of first air outlets 2412 are formed, the first air outlets 241 are disposed on the inlaid triangular surface A2, the second through holes 242 are formed on the air outlet surface by a plurality of second air outlets 2422, and the second air outlets are disposed on the curved surface B2. . The inlaid triangular surface A2 occupies 25% of the area of the outlet surface of the shower head with the through hole, and the curved surface B2 occupies 75% of the area of the outlet surface of the shower head with the through hole.
本發明之某些實施方式中，長度比值越大該通氣孔之流阻越大，對應之氣流量越小。面積比值越小流阻越大，對應之氣流量越小。In some embodiments of the invention, the greater the length ratio, the greater the flow resistance of the vent, and the smaller the corresponding gas flow. The smaller the area ratio, the larger the flow resistance, and the smaller the corresponding gas flow rate.
如第9圖所示，該圖是以矽片之圓心為原點，X軸是沿著矽片徑向距離矽片邊3mm的座標(由-147mm-147mm)，y軸是矽片表面沿著徑向方向經過等離子處理之沉積速率。As shown in Fig. 9, the figure is based on the center of the cymbal, and the X-axis is a coordinate (by -147mm-147mm) along the radial direction of the cymbal blade 3mm from the edge of the cymbal. The y-axis is the surface of the cymbal. The deposition rate in the radial direction through the plasma treatment.
在第二種電漿處理製程中，第二種電漿處理製程之載物台溫度為400℃，工作壓力為4托，上下電極間距為12毫米，射頻功率為300瓦，矽烷流量為300毫升每分鐘，一氧化二氮氣體流量為9000毫升每分鐘。曲線21是噴淋頭通孔長度比值全部都相同之沉積速率趨勢線。因其噴淋頭通孔長度比值都相同，所以通孔流阻都相同，進而通孔所有的氣流量都相同，但是因為其在噴淋頭之位置對應處理之基板之位置不同，所以導致所對應位置之沉積速率不同，如沉積速率趨勢線21所示，經過等離子處理之沉積速率沿著矽片徑向呈現由中心向邊緣逐漸變小，在靠近邊緣處沉積速率又有急劇變小之趨勢，在矽片上之沉積速率非常之不均勻。In the second plasma processing process, the temperature of the second plasma processing process is 400 ° C, the working pressure is 4 Torr, the upper and lower electrode spacing is 12 mm, the RF power is 300 watts, and the decane flow rate is 300 ml. The flow rate of nitrous oxide gas per minute was 9000 ml per minute. Curve 21 is the deposition rate trend line for which the showerhead through hole length ratios are all the same.Because the ratio of the length of the through-hole of the sprinkler is the same, the flow resistance of the through-hole is the same, and all the flow rates of the through-hole are the same, but because the position of the substrate corresponding to the position of the shower head is different, the The deposition rate of the corresponding position is different. As shown by the deposition rate trend line 21, the deposition rate after plasma treatment gradually decreases from the center to the edge along the radial direction of the slab, and the deposition rate decreases sharply near the edge. The deposition rate on the ruthenium is very uneven.
進一步的，請一併參閱第7圖及第8圖，在第二種電漿處理製程中，曲線22代表本實施例中噴淋頭230包括第一通孔241和第二通孔242之沉積速率趨勢線。因第一長度比值大於第二長度比值，第一通孔241之流阻大於第二通孔242之流阻，進而第一通孔241之氣流量小於第二通孔242之氣流量，所以第一通孔241所在之相應位置之薄膜沉積速率小於第二通孔242之所在之相應位置之薄膜沉積速率。Further, please refer to Figure 7 and Figure 8 together at the second plasma station.In the manufacturing process, the curve 22 represents the deposition rate trend line of the shower head 230 including the first through hole 241 and the second through hole 242 in this embodiment. Because the first length ratio is greater than the second length ratio, the flow resistance of the first through hole 241 is greater than the flow resistance of the second through hole 242, and the air flow of the first through hole 241 is smaller than the air flow of the second through hole 242, so The film deposition rate at the corresponding position where the through hole 241 is located is smaller than the film deposition rate at the corresponding position where the second through hole 242 is located.
具體的，本實施方式中，藉由對噴淋頭230第一通孔241和第二通孔242分別進行如上所述之結構設計及區域佈置，使得矽片在經過噴淋頭等離子處理後，矽片沉積速率沿著矽片徑向由中心向邊緣方向表現之很均勻。Specifically, in the embodiment, the first through hole 241 and the second through hole 242 of the shower head 230 are respectively subjected to the structural design and the regional arrangement as described above, so that the cymbal is subjected to plasma treatment through the shower head. The sputum deposition rate is uniform along the radial direction of the cymbal from the center to the edge.
實施例三Embodiment 3
參閱第10圖，本實施例所述之噴淋頭330與實施例一所述之噴淋頭130和實施例二所述之噴淋頭230區別在於噴淋頭之通孔340之結構或佈置不同。噴淋頭330之通孔340包括第一通孔341、第二通孔342和第三通孔343，第一通孔341具有第一流阻，第二通孔342具有第二流阻，第三通孔343具有第三流阻，第三流阻不等於第一流阻和第二流阻以均勻反應氣體在基板上之沉積速率。Referring to FIG. 10, the shower head 330 of the present embodiment is different from the shower head 130 of the first embodiment and the shower head 230 of the second embodiment in the structure or arrangement of the through holes 340 of the shower head. different. The through hole 340 of the shower head 330 includes a first through hole 341, a second through hole 342 and a third through hole 343. The first through hole 341 has a first flow resistance, and the second through hole 342 has a second flow resistance, and a third The through hole 343 has a third flow resistance, and the third flow resistance is not equal to the first flow resistance and the second flow resistance to uniformly deposit a deposition rate of the reaction gas on the substrate.
如第11圖所示，其中，本實施例中之第一通孔341和第二通孔342之結構與實施例一中第一通孔341和第二通孔342之結構相同，但是區域佈置不同，容後詳述。As shown in FIG. 11, the structure of the first through hole 341 and the second through hole 342 in this embodiment is the same as that of the first through hole 341 and the second through hole 342 in the first embodiment, but the area is arranged. Different, detailed later.
如第11圖所示，本實施例中之第三通孔343具有第三進氣端3431和第三出氣口3432，第三進氣端3431和第三出氣口3432相連通，第三出氣口3432之長度與第三通孔之長度343具有第三長度比值，第三長度比值為45%，即，第三出氣口長度與第二進氣端長度之和為14毫米，第三出氣口長度為6.3毫米，第三進氣端長度為7.7毫米。第三進氣端3431沿著垂直氣體流向之方向具有第三進氣橫截面積，第三進氣橫截面積的為圓形，直徑為2.2毫米，第三進氣端沿著垂直氣體流向之方向具有第三出氣橫截面積，第三出氣橫截面積的為圓形，直徑為0.7毫米，第三進氣橫截面積大於第三出氣橫截面積，第三進氣橫截面積與第三出氣橫截面積比值為第三面積比值，第三面積比值為22/7，不等於第一面積比值2.5和第二面積比值3。As shown in FIG. 11, the third through hole 343 in this embodiment has a third intake end 3431 and a third air outlet 3432. The third intake end 3431 and the third air outlet 3432 are in communication, and the third air outlet is connected. The length of 3432 has a third length ratio with the length 343 of the third through hole, and the third length ratio is 45%, that is, the sum of the length of the third air outlet and the length of the second air inlet is 14 mm, and the length of the third air outlet is It is 6.3 mm and the third intake end is 7.7 mm long.The third intake end 3431 has a third intake cross-sectional area along the direction of the vertical gas flow direction, the third intake cross-sectional area is circular and has a diameter of 2.2 mm, and the third intake end is along the vertical gas flow direction. The direction has a third outlet cross-sectional area, the third outlet cross-sectional area is circular, the diameter is 0.7 mm, the third intake cross-sectional area is larger than the third outlet cross-sectional area, the third intake cross-sectional area and the third The ratio of the outflow cross-sectional area is the third area ratio, and the third area ratio is 22/7, which is not equal to the first area ratio of 2.5 and the second area ratio of 3.
在本實施方式中，通孔之區域佈置不同也會對薄膜沉積速率有所影響。如第10圖所示，噴淋頭330具有圓形之出氣面331，出氣面包括第一內嵌三角形面A3、第二內嵌三角形面C和弧面B3，第一通孔341在出氣面331上形成複數個第一出氣口3412，第一出氣口341設置於第二內嵌三角形面C，第二通孔342在出氣面331上形成複數個第二出氣口3422，第二出氣口設置於第一內嵌三角形面A3，第三通孔343在出氣面331上形成複數個第三出氣口3432，第三出氣口設置於弧面B3。第一內嵌三角形面A3占鋪設有通孔之噴淋頭出氣面面積的40%，第二內嵌三角形面C占鋪設有通孔之噴淋頭出氣面面積的50%，弧面B3占鋪設有通孔之噴淋頭出氣面面積的10%。In the present embodiment, the different regional arrangement of the via holes also has an effect on the film deposition rate. As shown in FIG. 10, the shower head 330 has a circular air outlet surface 331, and the air outlet surface includes a first inlaid triangular surface A3, a second inscribed triangular surface C and a curved surface B3, and the first through hole 341 is on the air outlet surface. A plurality of first air outlets 3412 are formed on the 331, the first air outlet 341 is disposed on the second inscribed triangular surface C, and the second through hole 342 forms a plurality of second air outlets 3422 on the air outlet surface 331, and the second air outlet is disposed. The first in-line triangular surface A3, the third through hole 343 forms a plurality of third air outlets 3432 on the air outlet surface 331, and the third air outlet is disposed on the curved surface B3. The first inlaid triangular surface A3 occupies 40% of the area of the outlet surface of the shower head provided with the through hole, and the second inlaid triangular surface C occupies 50% of the area of the outlet surface of the shower head provided with the through hole, and the curved surface B3 occupies 10% of the area of the outlet surface of the shower head with through holes.
本發明之某些實施方式中，長度比值越大該通氣孔之流阻越大，對應之氣流量越小，面積比值越小該通孔之流阻越大，對應之氣流量越小。In some embodiments of the present invention, the larger the length ratio is, the larger the flow resistance of the vent hole is, and the smaller the gas flow rate is, the smaller the area ratio is, the larger the flow resistance of the through hole is, and the smaller the gas flow rate is.
如第12圖所示，該圖是以矽片之圓心為原點，X軸是沿著矽片徑向距離矽片邊3mm的座標(由-147mm-147mm)，y軸是矽片表面沿著徑向方向經過等離子處理之沉積速率。As shown in Fig. 12, the figure is based on the center of the cymbal, and the X-axis is the coordinate (by -147mm-147mm) of the rim of the cymbal along the radial direction of the cymbal. The y-axis is the surface of the cymbal. The deposition rate in the radial direction through the plasma treatment.
在第三種電漿處理製程中，第三種電漿處理製程之載物台溫度為400℃，工作壓力為1.5托，上下電極間距17毫米，射頻功率為500瓦，矽烷流量為600毫升每分鐘，一氧化二氮氣體流量為8000毫升每分鐘。曲線31是噴淋頭通孔長度比值全部都相同之沉積速率趨勢線。因其噴淋頭通孔長度比值都相同，所以通孔流阻都相同，進而通孔所有之氣流量都相同，但是因為其在噴淋頭之位置對應處理之基板之位置不同，所以導致所對應位置之沉積速率不同，如沉積速率趨勢線31所示，經過等離子處理之沉積速率沿著矽片徑向呈現由中心向邊緣逐漸變大，在靠近邊緣處沉積速率又有急劇變大之後又急劇變小之趨勢，在矽片上之沉積速率非常之不均勻。In the third plasma processing process, the temperature of the third plasma processing process is 400 ° C, the working pressure is 1.5 Torr, the upper and lower electrode spacing is 17 mm, and the RF power is500 watts, decane flow rate of 600 ml per minute, nitrous oxide gas flow rate of 8000 ml per minute. Curve 31 is the deposition rate trend line for which the showerhead through hole length ratios are all the same.Because the ratio of the length of the through-hole of the sprinkler is the same, the flow resistance of the through-hole is the same, and all the flow rates of the through-hole are the same, but because the position of the substrate corresponding to the position of the shower head is different, The deposition rate of the corresponding position is different. As shown by the deposition rate trend line 31, the deposition rate after plasma treatment gradually increases from the center to the edge along the radial direction of the slab, and the deposition rate increases sharply near the edge. The trend of sharpening is that the deposition rate on the bracts is very uneven.
進一步的，請一併參閱第10圖及第11圖，在第三種電漿處理製程中，曲線32代表本實施例中噴淋頭30包括第一通孔341、第二通孔342和第三通孔343之沉積速率趨勢線。因第一長度比值大於第二長度比值，第二長度比值大於第三長度比值，第一通孔341之流阻大於第二通孔342之流阻，第二通孔342之流阻大於第三通孔343之流阻，進而第一通孔341之氣流量小於第二通孔342之氣流量，第二通孔342之氣流量小於第三通孔343之氣流量，所以第一通孔341所在之相應位置之薄膜沉積速率小於第二通孔342之所在之相應位置之薄膜沉積速率，第二通孔342所在之相應位置之薄膜沉積速率小於第三通孔343之所在之相應位置之薄膜沉積速率。Further, please refer to FIG. 10 and FIG. 11 together. In the third plasma processing process, curve 32 represents that the shower head 30 in the embodiment includes a first through hole 341, a second through hole 342, and a first The deposition rate trend line of the three-way hole 343. The first length ratio is greater than the second length ratio, the second length ratio is greater than the third length ratio, the flow resistance of the first through hole 341 is greater than the flow resistance of the second through hole 342, and the flow resistance of the second through hole 342 is greater than the third The flow resistance of the through hole 343, and the gas flow rate of the first through hole 341 is smaller than the gas flow rate of the second through hole 342, and the gas flow rate of the second through hole 342 is smaller than the gas flow rate of the third through hole 343, so the first through hole 341 The film deposition rate of the corresponding position is smaller than the film deposition rate of the corresponding position where the second through hole 342 is located, and the film where the film deposition rate of the corresponding position of the second through hole 342 is smaller than the corresponding position of the third through hole 343 Deposition rate.
具體的，本實施方式中，藉由對噴淋頭330第一通孔341、第二通孔342和第三通孔343分別進行如上所述之結構設計及區域佈置，使得矽片在經過噴淋頭等離子處理後，矽片沉積速率沿著矽片徑向由中心向邊緣方向表現之很均勻。Specifically, in the embodiment, the first through hole 341, the second through hole 342, and the third through hole 343 of the shower head 330 are respectively subjected to the structural design and the regional arrangement as described above, so that the cymbal piece is sprayed. After the showerhead plasma treatment, the deposition rate of the cymbal is very uniform along the radial direction of the cymbal from the center to the edge.
需要說明的是，在上述實施例中，對各個實施例之描述都各有側重，某個實施例中沒有詳細描述之部分，可以參見其他實施例之相關描述。其次，本領域技術人員也應該知悉，說明書中所描述之實施例均屬於優選實施例。It should be noted that, in the foregoing embodiments, the descriptions of the various embodiments are different, and the parts that are not described in detail in a certain embodiment may be referred to other embodiments.Related description. Secondly, those skilled in the art should also understand that the embodiments described in the specification are all preferred embodiments.
應當理解，雖然本說明書按照實施例加以描述，但並非每個實施例僅包含一個獨立的技術方案，說明書的這種敘述方式僅僅是為清楚起見，本發明所屬技術領域之通常知識者應當將說明書作為一個整體，各實施例中之技術方案也可以經適當組合，形成本領域技術人員可以理解的其他實施例。上文所列出的系列之詳細說明僅僅是針對本發明之可行性實施例之具體說明，它們並非用以限制本發明之保護範圍，凡未脫離本發明技術精神所作之等效實施例或變更均應包含在本發明之保護範圍之內。It should be understood that the description is not to be construed as limited to the details of the embodiments of the invention. The specification as a whole, the technical solutions in the respective embodiments may also be combined as appropriate to form other embodiments that can be understood by those skilled in the art. The detailed description of the series set forth above is only for the specific description of the embodiments of the present invention, and is not intended to limit the scope of the present invention. All should be included in the scope of protection of the present invention.
100‧‧‧電漿處理裝置100‧‧‧ Plasma processing unit
101‧‧‧反應腔101‧‧‧Reaction chamber
102‧‧‧側壁102‧‧‧ side wall
120‧‧‧排氣系統120‧‧‧Exhaust system
130‧‧‧噴淋頭130‧‧‧Sprinkler
140‧‧‧噴淋頭通孔140‧‧‧Spray head through hole
150‧‧‧載物台150‧‧‧stage
160‧‧‧基板160‧‧‧Substrate
170‧‧‧反應腔閥門170‧‧‧Reaction chamber valve
180‧‧‧傳輸腔180‧‧‧Transmission chamber
1201‧‧‧排氣泵1201‧‧‧Exhaust pump
1202‧‧‧控壓單元1202‧‧‧Control unit
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610340838.4ACN105779972B (en) | 2016-05-19 | 2016-05-19 | A kind of spray head and its plasma processing apparatus |
| Publication Number | Publication Date |
|---|---|
| TWI605149Btrue TWI605149B (en) | 2017-11-11 |
| TW201741491A TW201741491A (en) | 2017-12-01 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105119599ATWI605149B (en) | 2016-05-19 | 2016-06-22 | Shower head and plasma processing device |
| Country | Link |
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| CN (1) | CN105779972B (en) |
| TW (1) | TWI605149B (en) |
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