一種具有厚金屬板層的異質接合散熱基板。A heterojunction heat dissipation substrate having a thick metal plate layer.
以往要在絕緣陶瓷基板或半導體基板本體上結合一層例如銅等金屬作為電路或散熱結構，一般是採用電鍍增厚的方式。由於基板本體與金屬間的熱膨脹係數差異過大，隨著溫度變化，因熱膨脹而產生的基板與金屬間的伸長量差異就愈凸顯，進而導致結合的介面受到位於上下的基板和貼附金屬相對拉扯、擠壓而逐步變形、分離或破裂。尤其是例如製成電路而進行耐高溫檢測、或是應用在高亮度LED元件中而被點亮一段時間，由於環境的高溫影響，就容易導致檢測失敗而降低產品良率、或是造成產品迅速劣化損壞，逼迫使用者浪費材料、人力與時間進行更換維修。Conventionally, a metal such as copper has been bonded to an insulating ceramic substrate or a semiconductor substrate body as a circuit or a heat dissipating structure, and a plating thickening method is generally employed. Since the difference in thermal expansion coefficient between the substrate body and the metal is too large, the difference in elongation between the substrate and the metal due to thermal expansion becomes more prominent as the temperature changes, and the bonded interface is relatively pulled by the substrate and the attached metal located above and below. , squeezing and gradually deforming, separating or breaking. In particular, for example, it is made into a circuit for high-temperature detection, or is applied to a high-brightness LED element and is illuminated for a period of time. Due to the high temperature influence of the environment, it is easy to cause a failure of detection to reduce product yield or cause a rapid product. Deterioration damage, forcing the user to waste material, manpower and time for replacement repair.
針對此問題，業界已有人提出如圖10所示的解決方案，其主要結構是在基板本體20與增厚金屬層23之間再加設一層中間金屬層21，並於中間金屬層上透過光阻顯影沖刷出多個緩衝空間22，再以傳統技術於中間金屬層之上電鍍增厚金屬層。當產生如上所述的溫度增高時，便可利用緩衝空間22作為上下兩側基板本體與增厚金屬層間的機械緩衝，而容納膨脹差異、消解熱應力、提供舒壓管道，藉以吸收熱膨脹造成的伸長量差距，避免基板本體與增厚金屬直接拉扯而造成界面破損。In response to this problem, a solution as shown in FIG. 10 has been proposed in the industry. The main structure is that an intermediate metal layer 21 is further disposed between the substrate body 20 and the thickened metal layer 23, and light is transmitted through the intermediate metal layer. The resistive development washes out a plurality of buffer spaces 22, and then thickens the metal layer by electroplating on the intermediate metal layer by conventional techniques. When the temperature increase as described above occurs, the buffer space 22 can be utilized as a mechanical buffer between the upper and lower substrate bodies and the thickened metal layer, and accommodates the difference in expansion, the thermal stress is digested, and the pressure-reducing pipe is provided to absorb the thermal expansion. The difference in elongation prevents the interface between the substrate body and the thickened metal from being pulled directly to cause damage to the interface.
然而此方案在實作上仍有兩項缺陷，首先，運用光阻顯影技術需要先後增加佈上光阻膜、曝光、顯影沖洗、去除光阻膜等數個步驟，使加工作業更趨繁複、加工成本也被迫提高。其次，該增厚金屬層仍是透過電鍍成形，不僅產出效率不佳，且所成形的增厚金屬層之結構與密度的均勻度較差，難以符合業界日益提升的品質需求。However, this program still has two defects in its implementation. First, it uses photoresist development technology.It is necessary to increase the number of steps such as photoresist on the cloth, exposure, development and rinsing, and removal of the photoresist film, so that the processing operation becomes more complicated and the processing cost is forced to increase. Secondly, the thickened metal layer is still formed by electroplating, which not only has poor production efficiency, but also has a poor uniformity of structure and density of the formed thickened metal layer, and it is difficult to meet the ever-increasing quality requirements of the industry.
亦有業者建議分別預先成形上述基板本體和一片材質均勻的金屬板，並採直接接合的方式將上述兩者透過攝氏千度以上高溫，以高於熔點的溫度加熱，使兩種材質互熔而接合。雖然可避免電鍍增厚所造成的熱應力問題，然而由於此種金屬加工的作業溫度過高，無論是操作環境與機具都相當昂貴，且金屬板與基板本體在大幅升溫及降溫過程中均會產生嚴重的熱漲冷縮差異，也使得材料的界面在延伸方向因此劇烈拉扯，介面兩側結構的結合無法穩定，造成產出良率不佳的問題。綜上可知，目前的各種解決方案皆有其明顯的缺陷。Some manufacturers have proposed to pre-form the above-mentioned substrate body and a piece of metal plate with uniform material, and directly pass the two through a temperature of more than one thousand degrees Celsius, and heat at a temperature higher than the melting point to fuse the two materials. Engage. Although the thermal stress caused by electroplating thickening can be avoided, due to the high operating temperature of such metal processing, both the operating environment and the machine are quite expensive, and the metal plate and the substrate body are both in a large temperature rise and a cooling process. The serious difference between heat and cold shrinkage is also caused, and the interface of the material is pulled sharply in the extending direction, and the combination of the structures on both sides of the interface cannot be stabilized, resulting in a problem of poor yield yield. In summary, the current various solutions have obvious drawbacks.
為解決上述問題，本案利用不同的加工方式提供一種改良結構，利用一層低溫熱壓金屬層，在低於攝氏400度的低操作溫度下，直接將厚金屬板層接合至基板上。據此改良，一方面加工的溫度被大幅降低至攝氏400度以下，整體製造環境與設備可以無須承受攝氏千度高溫，產線設置成本因而降低；另方面避免前述極端溫度造成熱應力的落差，導致陶瓷基板或半導體基板與金屬間，因加工過程中或使用過程中熱漲冷縮拉扯而破損之問題，大幅提升產品良率，延長使用壽命，節省材料耗損；而直接加壓過程簡單，產出效率因而提升；尤其是產品中的厚金屬層材質均勻，產品質量也從而提升。In order to solve the above problems, the present invention utilizes different processing methods to provide an improved structure in which a thick metal plate layer is directly bonded to the substrate at a low operating temperature of less than 400 degrees Celsius using a layer of low temperature hot pressed metal layer. According to this improvement, on the one hand, the processing temperature is greatly reduced to below 400 degrees Celsius, the overall manufacturing environment and equipment can be subjected to a high temperature of one thousand degrees Celsius, and the installation cost of the production line is thus reduced; on the other hand, the thermal stress drop caused by the aforementioned extreme temperature is avoided. The problem that the ceramic substrate or the semiconductor substrate and the metal are damaged due to the heat expansion and contraction during the process or during use greatly increases the product yield, prolongs the service life, and saves material loss; and the direct pressurization process is simple. The efficiency is thus improved; in particular, the thick metal layer in the product is made of uniform material and the product quality is thus improved.
本發明之一目的在提供一種具有厚金屬板層的異質接合散熱基板，透過低溫熱壓金屬層之低溫加工，避免加工過程中的劇烈熱漲冷縮，大幅降低界面剝落問題，有效提升產品的良率。An object of the present invention is to provide a heterojunction heat dissipation substrate having a thick metal plate layer, which is subjected to low temperature processing of a low temperature hot pressed metal layer, thereby avoiding severe heat expansion and contraction during processing, greatly reducing the problem of interface peeling, and effectively improving the product. Yield.
本發明另一目的在提供一種具有厚金屬板層的異質接合散熱基板，透過低溫熱壓金屬層之低溫加工取代電鍍增厚，大幅降低加工成本，且提高產出效率，使得大量生產成為可能。Another object of the present invention is to provide a heterojunction heat-dissipating substrate having a thick metal plate layer, which can replace the electroplating thickening by low-temperature processing of the low-temperature hot-pressed metal layer, greatly reduce the processing cost, and improve the output efficiency, thereby making mass production possible.
本發明又一目的在提供一種具有厚金屬板層的異質接合散熱基板，讓基板上的金屬層材質無論密度與結構均具有極高的均勻度，提高產品質量。Another object of the present invention is to provide a heterojunction heat dissipating substrate having a thick metal plate layer, so that the metal layer material on the substrate has extremely high uniformity regardless of density and structure, thereby improving product quality.
本發明再一目的在提供一種具有厚金屬板層的異質接合散熱基板，藉由降低加工操作溫度在攝氏400度以下，有效降低生產線的耐熱需求，從而減低產線的設置成本。Still another object of the present invention is to provide a heterojunction heat dissipating substrate having a thick metal plate layer, which can effectively reduce the heat resistance requirement of the production line by lowering the processing operation temperature below 400 degrees Celsius, thereby reducing the installation cost of the production line.
為達上述目的，本案提供一種具有厚金屬板層的異質接合散熱基板，包括：一層陶瓷基板；一層設置於該陶瓷基板上的金屬結合層，供與該陶瓷基板緊密結合，該金屬結合層的熔點高於攝氏600度，且具有高於上述陶瓷基板的導熱係數；一層厚度高於上述金屬結合層的厚金屬板層，具有高於上述陶瓷基板的導熱係數，且該厚金屬板層的熔點高於攝氏600度；及至少一層低溫熱壓金屬層，係供設置於上述金屬結合層或上述厚金屬板層的至少其中之一，且該低溫熱壓金屬層與上述金屬結合層和/或上述厚金屬板層的活化結合溫度低於攝氏400度。In order to achieve the above object, the present invention provides a heterojunction heat dissipating substrate having a thick metal plate layer, comprising: a ceramic substrate; a metal bonding layer disposed on the ceramic substrate for tightly bonding with the ceramic substrate, the metal bonding layer a melting point higher than 600 degrees Celsius, and having a thermal conductivity higher than that of the ceramic substrate; a thick metal plate layer having a thickness higher than the metal bonding layer, having a thermal conductivity higher than that of the ceramic substrate, and a melting point of the thick metal plate layer And at least one layer of the low-temperature hot-pressed metal layer for providing at least one of the metal bonding layer or the thick metal plate layer, and the low-temperature hot-pressed metal layer and the metal bonding layer and/or The above-mentioned thick metal plate layer has an activation bonding temperature of less than 400 degrees Celsius.
透過本案揭露的具有厚金屬板層的異質接合散熱基板，透過低溫熱壓金屬層的設置，搭配低溫熱壓加工技術，使得本案陶瓷基板與金屬層、厚金屬板層彼此的熱膨脹控制在可容許範圍，降低製造或使用過程中，基板與金屬板間因熱應力的落差而受損剝落的機率，也因此降低產線設置成本。另外，本案的厚金屬板層可直接透過低溫熱壓金屬層而黏著設置於陶瓷基板上，避免電鍍增厚所造成的密度與結構不均勻問題。Through the heterojunction heat-dissipating substrate with thick metal plate layer exposed in this case, through the setting of low-temperature hot-pressed metal layer, combined with low-temperature hot-pressing technology, the ceramic substrate and gold in this caseThe thermal expansion of the genus layer and the thick metal plate layer is controlled within an allowable range, and the probability of damage and flaking due to the difference in thermal stress between the substrate and the metal plate during manufacturing or use is reduced, thereby reducing the installation cost of the production line. In addition, the thick metal plate layer of the present invention can be directly adhered to the ceramic substrate through the low-temperature hot-pressed metal layer, thereby avoiding the problem of density and structural unevenness caused by plating thickening.
10‧‧‧陶瓷基板10‧‧‧Ceramic substrate
12、12’、12”‧‧‧金屬結合層12, 12', 12" ‧ ‧ metal bonding layer
14‧‧‧金屬層14‧‧‧metal layer
16、16’、16”‧‧‧低溫熱壓金屬層16, 16', 16" ‧ ‧ low temperature hot pressed metal layer
18、18’、18”‧‧‧厚金屬板層18, 18', 18" ‧ ‧ thick metal slab
22‧‧‧緩衝空間22‧‧‧ buffer space
20‧‧‧基板本體20‧‧‧Substrate body
21‧‧‧中間金屬層21‧‧‧Intermediate metal layer
23‧‧‧增厚金屬層23‧‧‧ Thickened metal layer
圖1為本發明第一較佳實施例的剖面圖，用以說明主要結構的連結關係；圖2為本發明第一較佳實施例的示意圖，用以說明金屬結合層與陶瓷基板連接的加工情形；圖3為本發明第一較佳實施例的部分放大圖，用以說明陶瓷基板、金屬結合層與金屬層的結構關係；圖4為本發明第一較佳實施例的示意圖，用以說明低溫熱壓金屬層低溫熱熔，與厚金屬板層、金屬層緊密接合的情形；圖5為銅銦的共晶相圖；圖6為本發明第二較佳實施例的示意圖，用以說明釋例為一層錫層的低溫熱壓金屬層與銅材質的厚金屬板層、金屬結合層低溫結合的情況；圖7為銅錫的共晶相圖；圖8為本發明第三較佳實施例的示意圖，圖中可見本例用了兩層低溫熱壓金屬層，分別設置在厚金屬板層與金屬結合層上，低溫結合時以兩層低溫熱壓金屬層彼此發生共晶相，進一步降低作業所需的活化結合溫度；圖9為錫銦的共晶相圖；圖10為先前技術的剖面圖。1 is a cross-sectional view showing a first embodiment of the present invention for explaining a connection relationship of main structures; and FIG. 2 is a schematic view showing a process of connecting a metal bonding layer and a ceramic substrate according to a first preferred embodiment of the present invention; 3 is a partially enlarged view of a first preferred embodiment of the present invention for explaining a structural relationship between a ceramic substrate, a metal bonding layer and a metal layer; FIG. 4 is a schematic view of the first preferred embodiment of the present invention; The low-temperature hot-melt metal layer is low-temperature hot-melt, and is closely bonded to the thick metal plate layer and the metal layer; FIG. 5 is a eutectic phase diagram of copper indium; FIG. 6 is a schematic view of the second preferred embodiment of the present invention. The explanation is a case where a low-temperature hot-pressed metal layer of a tin layer is combined with a thick metal plate layer of copper material and a metal bond layer at a low temperature; FIG. 7 is a eutectic phase diagram of copper tin; FIG. 8 is a third comparison of the present invention. A schematic diagram of a preferred embodiment, which shows that two layers of low-temperature hot-pressed metal layers are respectively disposed on a thick metal plate layer and a metal bond layer, and two layers of low-temperature hot-pressed metal layers are eutectic phase when combined at low temperature. To further reduce the amount of work required Of the bonding temperature;Figure 9 is a eutectic phase diagram of tin indium; Figure 10 is a cross-sectional view of the prior art.
下文將搭配參考圖式之較佳實施例進行詳細說明，使有關本發明之前述及其他技術內容、特點與功效得以清楚呈現；此外，在各實施例中，相同之元件或步驟將以相似之標號表示。The foregoing and other technical features, features, and advantages of the present invention will be apparent from the following description of the preferred embodiments of the present invention. In the embodiments, the same elements or steps will be similar. The label indicates.
本案之具有厚金屬板層的異質接合散熱基板的第一較佳實施例請參考圖1~3所示，首先在釋例為氧化鋁的陶瓷基板10上形成一層金屬結合層12，其中的金屬結合層12釋例為一層濺鍍金屬薄層(本例中為厚度約1微米的鈦/銅層)，亦即用濺鍍的方式將金屬粒子加速衝擊進入陶瓷基板10的表面，並逐漸累積出一層與陶瓷基板10緊密結合的金屬結合層12。再於金屬結合層12上透過電鍍的方式增厚一小層金屬層14(在此釋例為銅)，其中金屬層14可由純金屬或為合金電鍍而成，金屬層14之上另設有一層低溫熱壓金屬層16，在此釋例為一層銦。The first preferred embodiment of the heterojunction heat dissipating substrate having a thick metal plate layer in the present case is shown in FIGS. 1 to 3. First, a metal bonding layer 12 is formed on the ceramic substrate 10 of the alumina state, in which the metal is The bonding layer 12 is illustrated as a thin layer of metal sputtered (in this case, a titanium/copper layer having a thickness of about 1 micrometer), that is, the metal particles are accelerated and impacted into the surface of the ceramic substrate 10 by sputtering, and gradually accumulate. A metal bonding layer 12 is closely bonded to the ceramic substrate 10. Further, a small metal layer 14 (in this case, copper) is thickened by electroplating on the metal bonding layer 12, wherein the metal layer 14 may be plated from a pure metal or an alloy, and the metal layer 14 is further provided thereon. A layer of low temperature hot pressed metal layer 16, here in this example, is a layer of indium.
待低溫熱壓金屬層16設置後，將一片預先成形的厚金屬板層18放置於低溫熱壓金屬層16上，採用低溫熱壓的方式將低溫熱壓金屬層16熱熔如圖4，藉以將金屬層14及厚金屬板層18接合。其中銦並非本案之限制，凡是低溫熱壓金屬層16與厚金屬板層18或金屬層14之間活化結合的活化溫度低於攝氏400度的金屬皆可作為本案之低溫熱壓金屬層16，例如本例中的銅與銦Cu2In的共晶點(eutectic point)溫度只需攝氏388.3度、其中銅銦共晶相圖如圖5，使得操作溫度低於攝氏400度便可將兩者活化結合。After the low-temperature hot-pressed metal layer 16 is disposed, a pre-formed thick metal plate layer 18 is placed on the low-temperature hot-pressed metal layer 16, and the low-temperature hot-pressed metal layer 16 is thermally fused by low-temperature hot pressing as shown in FIG. The metal layer 14 and the thick metal plate layer 18 are joined. Indium is not a limitation of the present invention. Any metal having an activation temperature of less than 400 degrees Celsius for activation bonding between the low temperature hot pressed metal layer 16 and the thick metal plate layer 18 or the metal layer 14 can be used as the low temperature hot pressed metal layer 16 of the present invention. For example, the eutectic point temperature of copper and indium Cu2 In in this example is only 388.3 degrees Celsius, and the copper indium eutectic phase diagram is shown in Figure 5, so that the operating temperature is lower than 400 degrees Celsius. Activated binding.
即使氧化鋁的熱膨脹係數為8*10-6/℃，而作為厚金屬板層的銅則為17.5*10-6/℃，兩者差距達兩倍，但因操作溫度與室溫差距僅攝氏三百餘度，遠低於以往動輒攝氏上千度的溫度升降，故依照本發明所揭露的技術，介面間造成的伸縮距離差被控制在可接受範圍內，使得產出良率得以大幅提升。且因此，生產線所需的設備不需因應動輒攝氏千度以上高溫，產線的設置成本因而降低。Even if the coefficient of thermal expansion of alumina is 8*10-6 /°C, and the thickness of copper as a thick metal layer is 17.5*10-6 /°C, the difference between the two is twice, but the difference between operating temperature and room temperature is only Celsius. More than three hundred degrees, far lower than the temperature rise and fall of thousands of degrees Celsius in the past, so according to the technology disclosed by the present invention, the difference in telescopic distance caused by the interface is controlled within an acceptable range, so that the output yield is greatly improved. . Therefore, the equipment required for the production line does not need to be subjected to a high temperature of more than a thousand degrees Celsius, and the installation cost of the production line is thus reduced.
冷凝後，厚金屬板層18即透過低溫熱壓金屬層16結合至金屬層14上，並具有高於陶瓷基板10的導熱係數，形成如剖面圖1所示之結構。本案完工之基板從下而上分別是陶瓷基板10、濺鍍的金屬結合層12、電鍍增厚的金屬層14、熱壓後兩側分別與金屬層14及厚金屬板層18互溶而緊密結合的低溫熱壓金屬層16、最後是厚金屬板層18。由於操作過程僅需經過熱壓及冷卻步驟，使得產出效率極佳，可以符合大量生產所需。另如圖1與圖4所示，由於厚金屬板層18為預先成形的一片金屬板，故不僅其密度與材質結構皆可非常均勻，厚度也可達數毫米甚至公分尺寸，遠大於濺鍍的金屬結合層12、電鍍增厚的金屬層14以及黏著結合用的低溫熱壓金屬層16，相較於以往採用濺鍍或電鍍所成形的金屬層，製程更簡便、且成本合理。After condensation, the thick metal plate layer 18 is bonded to the metal layer 14 through the low temperature hot pressed metal layer 16, and has a higher thermal conductivity than the ceramic substrate 10 to form a structure as shown in cross-section 1. The substrate completed in the present case is a ceramic substrate 10, a sputtered metal bond layer 12, a plated thick metal layer 14, and two sides of the hot-pressed metal layer 14 and the thick metal plate layer 18, respectively. The low temperature hot pressed metal layer 16, and finally the thick metal plate layer 18. Since the operation process only needs to be subjected to hot pressing and cooling steps, the output efficiency is excellent and can meet the requirements of mass production. As shown in FIG. 1 and FIG. 4, since the thick metal plate layer 18 is a pre-formed metal plate, not only the density and the material structure thereof are very uniform, but also the thickness can be several millimeters or even centimeters, which is much larger than the sputtering. The metal bonding layer 12, the electroplated thickened metal layer 14 and the low-temperature hot-pressed metal layer 16 for bonding and bonding are simpler and more cost-effective than the conventional metal layer formed by sputtering or electroplating.
本例中的銦之熱熔溫度約攝氏150度左右，銅的熔點則高達攝氏千度以上，但當銦與銅進行共晶結合時，共晶點溫度遠低於原本要熔融銅的熔點溫度，因此低溫熱壓加工時，只需設定在攝氏400度便綽綽有餘，更可大幅降低生產製造的環境要求。進一步，由於以往要熔融銅的溫度需高達攝氏千度，若採用半導體基板早已損毀，故絕不可選擇半導體基板；相較之下，本案操作溫度被限制在攝氏400度以下，使得半導體材質的基板也可以列入選擇範圍，也使得採用本案技術後，可以將材料選用的範圍進一步擴增至半導體基板，提昇製造彈性。In this example, the hot melt temperature of indium is about 150 degrees Celsius, and the melting point of copper is as high as over one thousand degrees Celsius. However, when indium and copper are eutectic bonded, the eutectic point temperature is much lower than the melting temperature of the originally molten copper. Therefore, when low-temperature hot-pressing is performed, it is only necessary to set a limit of 400 degrees Celsius, and the environmental requirements of the manufacturing environment can be greatly reduced. Further, since the temperature of the molten copper needs to be as high as one thousand degrees Celsius in the past, if the semiconductor substrate is already damaged, the semiconductor base must not be selected.In comparison, the operating temperature of the present case is limited to 400 degrees Celsius or less, so that the substrate of the semiconductor material can also be included in the selection range, and the range of material selection can be further expanded to the semiconductor substrate after adopting the technology of the present invention. Improve manufacturing flexibility.
透過上述材料與低溫熱壓之加工，再搭配低溫熱壓金屬層之結構，使本案得以避免過往電鍍增厚與直接接合之問題，並提供結構完善、穩定之異質接合散熱基板。相較電鍍增厚的技術結構，本案的基板可避免因加工、溫度檢測等過程中的溫度極端變化，故可大幅度降低金屬層或是厚金屬板層的熱應力對陶瓷基板的破壞性作用。且低溫熱壓金屬層可以將一片已成形的厚金屬板層緊密接合至基板上，無須採用過往電鍍增厚的方式進行加工；不但加快基板加工的速度、減少加工的步驟與成本，還能提供一層結構、密度均勻的厚金屬板層。另一方面，相較於直接接合的加工結構，本案以金屬層與低溫熱壓金屬層等結構作為良好的連接中介，透過層層漸進的方式消除厚金屬板層與陶瓷基板間的材質相斥，提供穩定之結構連結關係。Through the processing of the above materials and low-temperature hot pressing, and the structure of the low-temperature hot-pressed metal layer, the present invention can avoid the problems of past plating thickening and direct bonding, and provide a structurally stable and stable heterojunction heat-dissipating substrate. Compared with the technical structure of electroplating thickening, the substrate of the present invention can avoid extreme temperature changes during processing and temperature detection, so that the destructive effect of thermal stress of the metal layer or the thick metal plate layer on the ceramic substrate can be greatly reduced. . And the low-temperature hot-pressed metal layer can tightly bond a piece of formed thick metal plate layer to the substrate without using the method of past plating thickening; not only speeding up the processing speed of the substrate, reducing the processing steps and cost, but also providing A layer of thick metal sheet with uniform structure and uniform density. On the other hand, compared with the directly bonded processing structure, the structure of the metal layer and the low-temperature hot-pressed metal layer is used as a good connection medium, and the material between the thick metal plate layer and the ceramic substrate is eliminated by the layer layer progressively. Provide a stable structural connection.
本案具有厚金屬板層的異質接合散熱基板的第二較佳實施例如圖6所示，其中無須金屬層之結構，在厚金屬板層18’上設置有一層釋例為錫層的低溫熱壓金屬層16’，在低溫熱結合的加工過程中，低溫熱壓金屬層16’的兩側將分別與厚金屬板層18’及釋例為濺鍍銅的金屬結合層12’低溫結合。本例的低溫熱壓金屬層16’與厚金屬板層18’或金屬結合層12’之間活化結合的活化溫度低於攝氏400度的金屬皆可作為本案之低溫熱壓金屬層16’，請一併參考銅錫共晶相的圖7，儘管銅的熔點高達攝氏1000度，但共晶結合時同樣會大幅拉低兩者結合的共晶點溫度，使得Cu6Sn5的共晶相結合溫度約在攝氏400度，達到低溫熱結合的效果。A second preferred embodiment of the heterojunction heat dissipating substrate having a thick metal plate layer is as shown in FIG. 6, wherein the structure of the metal layer is not required, and a layer of low temperature hot pressing is provided on the thick metal plate layer 18'. The metal layer 16', during the low-temperature thermal bonding process, the two sides of the low-temperature hot-pressed metal layer 16' will be combined with the thick metal plate layer 18' and the metal-bonded layer 12' which is sputtered copper, respectively. The metal having a activation temperature of less than 400 degrees Celsius for activation bonding between the low temperature hot pressed metal layer 16' and the thick metal plate layer 18' or the metal bonding layer 12' of this example can be used as the low temperature hot pressed metal layer 16' of the present invention. Please refer to Figure 7 of the copper-tin eutectic phase together. Although the melting point of copper is as high as 1000 degrees Celsius, the eutectic bonding also greatly lowers the eutectic point temperature of the combination, making the eutectic phase of Cu6 Sn5 The combined temperature is about 400 degrees Celsius to achieve low temperature thermal bonding.
本案具有厚金屬板層的異質接合散熱基板的第三較佳實施例如圖8所示，分別在金屬結合層12”與厚金屬板層18”上各設置一層低溫熱壓金屬層16”，本例中兩層低溫熱壓金屬層16”分別為一錫層與一銦層。如銦錫共晶相圖9所示，當進行低溫熱壓時，銦錫共晶相甚至可在攝氏150度以下完成活化結合，使得金屬結合層12”與厚金屬板層18”透過兩層低溫熱壓金屬層16”彼此結合。當然熟知本領域技術者可以輕易推知，其中兩層低溫熱壓金屬層16”不一定要錫與銦進行搭配，亦可由錫與錫或銦與銦，雖然兩層低溫熱壓金屬層16”用同樣金屬無法產生共晶相，但錫的熔點只有攝氏231度、銦則是攝氏156度，兩層低溫熱壓金屬層16”彼此活化結合時，僅需考慮銦或錫本身的熔點，也使得操作溫度可以控制在低於攝氏400度，符合本案對低溫結合的要求。A third preferred embodiment of the heterojunction heat dissipating substrate having a thick metal plate layer as shown in FIG. 8 is provided with a layer of low temperature hot pressed metal layer 16" on each of the metal bonding layer 12" and the thick metal plate layer 18", respectively. In the example, the two layers of low-temperature hot-pressed metal layers 16" are a tin layer and an indium layer, respectively. As shown in Fig. 9 of the indium tin eutectic phase, when the low temperature hot pressing is performed, the indium tin eutectic phase can complete the activation bonding even below 150 degrees Celsius, so that the metal bonding layer 12" and the thick metal plate layer 18" pass through the two layers. The low-temperature hot-pressed metal layers 16" are bonded to each other. Of course, those skilled in the art can easily infer that the two layers of the low-temperature hot-pressed metal layer 16" do not necessarily have to be tin-doped with indium, or tin or tin or indium and indium, although Two layers of low-temperature hot-pressed metal layer 16" cannot produce a eutectic phase with the same metal, but the melting point of tin is only 231 degrees Celsius, and indium is 156 degrees Celsius. When two layers of low-temperature hot-pressed metal layer 16" are activated and combined with each other, only Considering the melting point of indium or tin itself, the operating temperature can be controlled to less than 400 degrees Celsius, which meets the requirements for low temperature bonding in this case.
經由本案前述實施例所揭示的技術內容，無論是採用共晶相的特殊效果，以錫或銦搭配銅來降低單純熔融銅所需的融化溫度，或者是直接採用低熔點金屬，均可使得本案能以攝氏400度以下的低溫進行操作，讓例如銅或鋁的結合加工操作溫度大幅降低。由於加工溫度愈高，所需的加工儀器與裝置的費用就愈昂貴，本案技術提供低溫結合加工的可能性，因此業者可節省相當的裝置費用，據此壓低加工成本；使產品價格進一步降低、有利市場的擴張。Through the technical content disclosed in the foregoing embodiments of the present invention, whether the eutectic phase is used, the tin or indium is combined with copper to reduce the melting temperature required for simply melting the copper, or the low melting point metal is used directly. It can be operated at a low temperature of 400 degrees Celsius or less, and the combined processing temperature of, for example, copper or aluminum is greatly lowered. The higher the processing temperature, the more expensive the processing equipment and equipment required. The technology of the present invention provides the possibility of low-temperature combined processing, so that the operator can save considerable equipment costs, thereby reducing the processing cost and further reducing the product price. Conducive to the expansion of the market.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，應仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are It should remain within the scope of this invention.
10‧‧‧陶瓷基板10‧‧‧Ceramic substrate
12‧‧‧金屬結合層12‧‧‧Metal bonding layer
14‧‧‧金屬層14‧‧‧metal layer
16‧‧‧低溫熱壓金屬層16‧‧‧Low temperature hot pressed metal layer
18‧‧‧厚金屬板層18‧‧‧Thick metal slab
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103143511ATWI585915B (en) | 2014-12-12 | 2014-12-12 | Heterogeneous bonding heat dissipation substrate with thick metal plate |
| Application Number | Priority Date | Filing Date | Title |
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| TW103143511ATWI585915B (en) | 2014-12-12 | 2014-12-12 | Heterogeneous bonding heat dissipation substrate with thick metal plate |
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| TW201622082A TW201622082A (en) | 2016-06-16 |
| TWI585915Btrue TWI585915B (en) | 2017-06-01 |
| Application Number | Title | Priority Date | Filing Date |
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| TW103143511ATWI585915B (en) | 2014-12-12 | 2014-12-12 | Heterogeneous bonding heat dissipation substrate with thick metal plate |
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| TW201244215A (en)* | 2011-02-09 | 2012-11-01 | Semiconductor Energy Lab | Light-emitting device |
| TW201321467A (en)* | 2011-10-24 | 2013-06-01 | Bando Chemical Ind | Composition for adhesion |
| TW201336910A (en)* | 2012-02-08 | 2013-09-16 | Nitto Denko Corp | Thermal conductive sheet |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201244215A (en)* | 2011-02-09 | 2012-11-01 | Semiconductor Energy Lab | Light-emitting device |
| TW201321467A (en)* | 2011-10-24 | 2013-06-01 | Bando Chemical Ind | Composition for adhesion |
| TW201336910A (en)* | 2012-02-08 | 2013-09-16 | Nitto Denko Corp | Thermal conductive sheet |
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| TW201622082A (en) | 2016-06-16 |
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