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TWI563635B - Non-volatile memory device and method for fabricating thereof - Google Patents

Non-volatile memory device and method for fabricating thereof

Info

Publication number
TWI563635B
TWI563635BTW103131853ATW103131853ATWI563635BTW I563635 BTWI563635 BTW I563635BTW 103131853 ATW103131853 ATW 103131853ATW 103131853 ATW103131853 ATW 103131853ATW I563635 BTWI563635 BTW I563635B
Authority
TW
Taiwan
Prior art keywords
fabricating
memory device
volatile memory
volatile
memory
Prior art date
Application number
TW103131853A
Other languages
Chinese (zh)
Other versions
TW201613073A (en
Inventor
Cheng Ta Yang
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics CorpfiledCriticalWinbond Electronics Corp
Priority to TW103131853ApriorityCriticalpatent/TWI563635B/en
Publication of TW201613073ApublicationCriticalpatent/TW201613073A/en
Application grantedgrantedCritical
Publication of TWI563635BpublicationCriticalpatent/TWI563635B/en

Links

TW103131853A2014-09-162014-09-16Non-volatile memory device and method for fabricating thereofTWI563635B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
TW103131853ATWI563635B (en)2014-09-162014-09-16Non-volatile memory device and method for fabricating thereof

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
TW103131853ATWI563635B (en)2014-09-162014-09-16Non-volatile memory device and method for fabricating thereof

Publications (2)

Publication NumberPublication Date
TW201613073A TW201613073A (en)2016-04-01
TWI563635Btrue TWI563635B (en)2016-12-21

Family

ID=56360945

Family Applications (1)

Application NumberTitlePriority DateFiling Date
TW103131853ATWI563635B (en)2014-09-162014-09-16Non-volatile memory device and method for fabricating thereof

Country Status (1)

CountryLink
TW (1)TWI563635B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
TWI745919B (en)*2020-04-082021-11-11旺宏電子股份有限公司Memory device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN107305892B (en)*2016-04-202020-10-02硅存储技术公司 Method of Forming Tri-Gate Non-Volatile Flash Memory Cell Pairs Using Two Polysilicon Deposition Steps
TWI760412B (en)*2018-01-052022-04-11聯華電子股份有限公司Memory device and manufacturing method thereof
TWI675456B (en)*2018-05-112019-10-21華邦電子股份有限公司Method for forming memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
TW200605079A (en)*2004-01-212006-02-01Sandisk CorpNon-volatile memory cell using high-k material and intergate programming
TW201409669A (en)*2012-08-282014-03-01Sk Hynix Inc Semiconductor device having buried bit line and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
TW200605079A (en)*2004-01-212006-02-01Sandisk CorpNon-volatile memory cell using high-k material and intergate programming
TW201409669A (en)*2012-08-282014-03-01Sk Hynix Inc Semiconductor device having buried bit line and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
TWI745919B (en)*2020-04-082021-11-11旺宏電子股份有限公司Memory device

Also Published As

Publication numberPublication date
TW201613073A (en)2016-04-01

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