本發明係關於一種用於半導體裝置或顯示裝置(LCD(Liquid Crystal Display，液晶顯示器)、有機EL(Electroluminescence，電致發光元件)等)之製造之光罩、其製造方法或裝置、檢查方法或裝置。The present invention relates to a photomask for manufacturing a semiconductor device or a display device (LCD (Liquid Crystal Display), organic EL (Electroluminescence), etc.), a method for manufacturing the same, an inspection method, or Device.
業界期望提高形成於光罩之轉印用圖案之精度，進而期望提高所形成之轉印圖案之檢查精度。The industry is expected to improve the accuracy of the transfer pattern formed on the photomask, and it is desirable to improve the inspection accuracy of the formed transfer pattern.
於專利文獻1(日本專利特開2010-134433號公報)中記載有一種於將光罩圖案轉印至被轉印體上時，可提高其座標精度之描繪方法、描繪裝置。尤其記載有如下方法：獲得經修正之描繪資料，以消除於光罩製造步驟中，因描繪轉印用圖案時之膜面(圖案形成面)之形狀不同於曝光時之形狀而導致無法於被轉印體上形成與設計一致之圖案的問題。A drawing method and a drawing device capable of improving the coordinate accuracy of the reticle pattern when the reticle pattern is transferred onto the transfer target body are described in the patent document 1 (JP-A-2010-134433). In particular, there is a method of obtaining a corrected drawing material to eliminate the fact that the shape of the film surface (pattern forming surface) when the transfer pattern is drawn is different from the shape at the time of exposure in the mask manufacturing step, and it is impossible to be A problem of forming a pattern conforming to the design on the transfer body.
[專利文獻1]日本專利特開2010-134433號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-134433
於顯示裝置之製造中，大多利用具備基於所要獲得之設備之設計之轉印用圖案的光罩。作為設備，於以智慧型手機或平板終端為代表之液晶顯示裝置或有機EL顯示裝置中，要求明亮省電、動作速度快且解像度高之優質圖像。因此，針對用於上述用途之光罩，發明者等人提出了新的技術課題。In the manufacture of a display device, a photomask having a transfer pattern based on the design of the device to be obtained is often used. As a device, it is based on a smart phone or tablet terminal.In the liquid crystal display device or the organic EL display device of the watch, high-quality images with high power saving, fast operation speed, and high resolution are required. Therefore, the inventors and the like have proposed a new technical problem for the photomask used for the above purpose.
為了鮮明地表現微細之圖像，必須提高像素密度，目前欲實現像素密度400ppi(pixel per inch，每英吋像素)或其以上之設備。因此，光罩之轉印用圖案之設計存在微細化、高密度化之傾向。此外，包含顯示用設備之大量電子設備係藉由形成有微細圖案之複數個層(Layer)之積層而立體地形成。因此，該等複數個層中之座標精度之提高、以及相互之座標之整合變得重要。即，若各層之圖案座標精度均不滿足特定等級，則會產生於已完成之設備中不產生恰當之動作等不良情況。因此，各層所要求之座標偏移之容許範圍存在日益變小之傾向。In order to vividly represent a fine image, it is necessary to increase the pixel density, and currently a device having a pixel density of 400 ppi (pixel per inch) or more is required. Therefore, the design of the transfer pattern of the photomask tends to be finer and higher in density. Further, a large number of electronic devices including a display device are three-dimensionally formed by a laminate of a plurality of layers in which a fine pattern is formed. Therefore, the improvement of the coordinates of the plurality of layers and the integration of the coordinates of each other become important. That is, if the pattern coordinate accuracy of each layer does not satisfy a certain level, there is a problem that an appropriate operation is not generated in the completed device. Therefore, the allowable range of coordinate offset required for each layer tends to become smaller.
此外，根據專利文獻1，有如下記載：推算出空白光罩之描繪步驟中之膜面之形狀與曝光時之膜面之形狀的形狀變化量，基於所推算出之形狀變化量而修正用於描繪之設計描繪資料。於該文獻中記載有如下方法：於描繪轉印用圖案之階段，對基板之膜面(於透明基板中指被成膜之側之面，於空白光罩中指形成有膜之面，於光罩中指形成有圖案之面)中之自理想平面之變形因素中的在曝光時亦殘留之成分、與在曝光時消失之成分進行區分，而獲得已修正之描繪資料。Further, according to Patent Document 1, it is described that the shape change amount of the shape of the film surface in the drawing step of the blank mask and the shape of the film surface during exposure is estimated, and is corrected based on the estimated amount of change in shape. Depicting the design and depicting the material. This document describes a method of forming a film surface on a substrate at the stage of drawing a transfer pattern (in the surface of the transparent substrate where the film is formed on the side of the film), the film is formed on the surface of the blank mask, and the mask is formed. Among the deformation factors of the ideal plane in the middle surface formed by the middle surface, the components remaining at the time of exposure are distinguished from the components disappearing at the time of exposure, and the corrected drawing data is obtained.
於藉由描繪裝置而於帶有光阻之空白光罩上描繪圖案時，以使膜面朝上之狀態將空白光罩載置於描繪裝置之載置台上。此時，認為空白光罩之膜面之表面形狀自理想之平面之變形因素有：(1)載置台之平坦度不足；(2)因於載置台上夾雜異物而導致之基板之彎曲；(3)空白光罩膜面之凹凸；以及(4)因空白光罩背面之凹凸所引起之膜面之變形。When the pattern is drawn on the blank mask with photoresist by the drawing device, the blank mask is placed on the mounting table of the drawing device with the film surface facing up. At this time, it is considered that the deformation factors of the surface shape of the film surface of the blank mask from the ideal plane are: (1) the flatness of the mounting table is insufficient; (2) the bending of the substrate due to inclusion of foreign matter on the mounting table; 3) the unevenness of the blank mask film surface; and (4) the deformation of the film surface caused by the unevenness of the back surface of the blank mask.
因此，該狀態下之空白光罩之表面形狀係上述4個因素累積而形成。繼而，於該狀態之空白光罩上進行描繪。Therefore, the surface shape of the blank mask in this state is formed by the accumulation of the above four factors. Then, the drawing is performed on the blank mask in this state.
另一方面，於將光罩搭載於曝光裝置時，藉由使膜面朝下且僅支持光罩周緣部而固定。將形成有抗蝕膜之被轉印體(由於在轉印圖案後藉由蝕刻等進行加工，故亦稱為被加工體)配置於光罩之下方，並自光罩之上方(自背面側)照射曝光之光。於該狀態下，上述4個變形因素中的(1)載置台之平坦度不足、以及(2)因於載置台上夾雜異物而導致之基板之彎曲消失。又，雖然(4)基板之背面之凹凸於該狀態下亦留下，但未形成圖案之背面之表面形狀不會影響表面(圖案形成面)之轉印。另一方面，於在曝光裝置中使用光罩時亦殘存之變形因素係上述(3)。On the other hand, when the photomask is mounted on the exposure apparatus, it is fixed by supporting the film surface facing downward and supporting only the peripheral portion of the mask. The transfer target body on which the resist film is formed (which is also referred to as a workpiece after being processed by etching or the like after the transfer pattern) is disposed under the photomask and from the upper side of the photomask (from the back side) ) illuminate the exposed light. In this state, among the four deformation factors, (1) the flatness of the mounting table is insufficient, and (2) the bending of the substrate due to inclusion of foreign matter on the mounting table disappears. Further, although (4) the unevenness of the back surface of the substrate remains in this state, the surface shape of the back surface on which the pattern is not formed does not affect the transfer of the surface (pattern forming surface). On the other hand, the deformation factor remaining when the photomask is used in the exposure apparatus is the above (3).
即，(1)、(2)及(4)之變形因素於描繪時存在，於曝光時消失。因該變化而產生描繪時與曝光時之座標偏移。因此，若針對上述(1)、(2)及(4)成為因素之表面形狀自理想平面之變化成分，對設計描繪資料進行修正而生成描繪資料，另一方面，不使(3)成為因素之表面形狀變化成分反映於上述修正中，則可獲得更精確之具有座標設計資料之轉印性能之光罩。That is, the deformation factors of (1), (2), and (4) exist at the time of drawing, and disappear at the time of exposure. Due to this change, the coordinates at the time of drawing and the exposure are generated. Therefore, if the surface shape of the factors (1), (2), and (4) is changed from the ideal plane, the design drawing data is corrected to generate the drawing data, and on the other hand, (3) is not a factor. The surface shape change component is reflected in the above correction, and a more precise photomask having transfer performance of the coordinate design data can be obtained.
因此，根據專利文獻1之方法，可提高形成於被轉印體上之圖案之座標精度。Therefore, according to the method of Patent Document 1, the coordinate accuracy of the pattern formed on the transfer target can be improved.
再者，作為對空白光罩進行描繪時及光罩搭載於曝光裝置時的基板膜面之形狀變化，有因基板之自重所導致之彎曲成分。描繪裝置內之空白光罩載置於載置台上，其姿勢取決於載置台之形狀，另一方面，搭載於曝光裝置之狀態之光罩因自重而彎曲，其膜面形狀自理想平面之變形相當大。若給出基板之尺寸或來自材料之物性值等，則可相對容易地推算出此種因自重彎曲所導致之膜面形狀之變形、進而因該變形所導致之各座標位置之偏移量。因此，用於顯示裝置用遮罩之製造的曝光裝置通常具備來自該自重彎曲成分之座標偏移之修正的功能，多數情況下對自重彎曲成分進行補償而進行描繪。因此，於專利文獻1之方法中的描繪資料之修正中，可無需反映基板之自重彎曲成分之步驟。In addition, as the shape of the substrate film surface when the blank mask is drawn and when the photomask is mounted on the exposure apparatus, there is a bending component due to the self weight of the substrate. The blank mask in the drawing device is placed on the mounting table, and the posture thereof depends on the shape of the mounting table. On the other hand, the mask mounted in the state of the exposure device is bent by its own weight, and the shape of the film surface is deformed from the ideal plane. quite big. When the size of the substrate, the physical property value of the material, or the like is given, it is relatively easy to estimate the deformation of the film surface shape caused by the self-weight bending, and the offset amount of each coordinate position due to the deformation. Therefore, it is used for a mask for a display deviceThe exposure apparatus manufactured usually has a function of correcting the coordinate offset from the self-weight bending component, and in many cases, the self-weight bending component is compensated and drawn. Therefore, in the correction of the drawing data in the method of Patent Document 1, the step of reflecting the self-weight bending component of the substrate can be eliminated.
然而，曝光裝置內之光罩並非僅承受單純之自重彎曲，於基板周緣附近之保持區域內，被曝光裝置之保持構件保持，從而於該部分受到強制性約束。於該情形時，於保持構件所接觸之部分，因光罩所承受之力所致之膜面變形對形成有圖案之區域亦會產生影響，從而有可能產生使其座標精度劣化之情況。本發明者發現，若考慮到目前開發中之顯示裝置等中之圖案之微細化或高積體化，則此種微細之影響亦有考慮之意義。However, the mask in the exposure apparatus is not only subjected to simple self-weight bending, but is held by the holding member of the exposure apparatus in the holding area near the periphery of the substrate, so that the portion is subject to the constraint. In this case, the deformation of the film surface caused by the force of the reticle is also affected by the force with which the reticle is in contact with the portion where the pattern is formed, and the coordinate accuracy may be deteriorated. The present inventors have found that the influence of such fineness is also considered in consideration of the miniaturization or high integration of the pattern in the display device or the like currently under development.
例如，顯示裝置等設備係積層經圖案化之薄膜而形成，但所積層之各層係藉由各不相同之光罩所具有之轉印用圖案而形成。當然，所使用之各光罩係基於嚴格之品質管理而製造。然而，由於各光罩不同，故難以將其表面之平坦度均製成完全理想之平面，又，亦難以使其膜面形狀於複數個光罩中完全一致。For example, a device such as a display device is formed by layering a patterned film, but each layer of the layer is formed by a transfer pattern included in each of the different masks. Of course, the reticle used is manufactured based on strict quality management. However, since the reticle is different, it is difficult to make the flatness of the surface into a completely ideal plane, and it is also difficult to make the film surface shape completely uniform in the plurality of reticle.
因此，於各光罩中，其膜面形狀存在個體差異，若考慮到該等各光罩因曝光裝置內之保持而產生變形之情形，而進行考慮有該等因素之描繪資料之修正，則可形成座標精度更高之轉印用圖案。Therefore, in each of the reticle, there is an individual difference in the shape of the film surface, and in consideration of the fact that the reticle is deformed by the holding in the exposure device, and correction of the drawing data considering the factors is considered, It can form a transfer pattern with higher coordinate accuracy.
即，雖然藉由專利文獻1之方法可獲得於防止因描繪時與曝光時之膜面姿態之差異所引起的座標精度之劣化方面有意義之精度提高，但本發明者發現：為了進一步提高精度而提高具有複數個層之設備之良率，如下方法較為有益，即，亦考慮因用於各層之光罩基板之膜面形狀之些許個體差異、及其等於曝光裝置內受到之保持力所產生之影響，並且實質上消除因該影響所致之轉印性之劣化。In other words, the method of Patent Document 1 can be used to prevent a significant improvement in the accuracy of the deterioration of the coordinate accuracy caused by the difference in the film surface posture at the time of the drawing and the exposure, but the inventors have found that in order to further improve the accuracy. Increasing the yield of a device having a plurality of layers is advantageous in that it is also considered to be due to a slight individual difference in the shape of the film surface of the reticle substrate used for each layer, and is equivalent to the holding force in the exposure device. It affects and substantially eliminates deterioration of transferability due to the influence.
因此，本發明之目的在於提供一種可提高形成於被轉印體上之圖案之座標精度之光罩之製造方法、描繪裝置、光罩之檢查方法、光罩之檢查裝置、及顯示裝置之製造方法。Accordingly, it is an object of the present invention to provide an improvement in formation on a transferable body.A method for manufacturing a mask with a coordinate accuracy of a pattern, a drawing device, a method for inspecting a photomask, an inspection device for a photomask, and a method for manufacturing a display device.
為了解決上述課題，本發明具有以下構成。In order to solve the above problems, the present invention has the following configuration.
一種光罩之製造方法，其包含：準備於基板之主表面上形成有薄膜及光阻膜之空白光罩，並藉由描繪裝置描繪特定之轉印用圖案；且該光罩之製造方法包括如下步驟：基於上述特定之轉印用圖案之設計而準備圖案設計資料A；獲得轉印面修正資料D，該轉印面修正資料D表示因將上述光罩保持於曝光裝置而引起之上述主表面之變形量、即除自重彎曲成分以外之上述主表面之變形量；獲得描繪時高度分佈資料E，該描繪時高度分佈資料E表示以上述主表面為上側而將上述空白光罩載置於上述描繪裝置之載置台上之狀態下的上述主表面之高度分佈；根據上述描繪時高度分佈資料E與上述轉印面修正資料D之差量而獲得描繪差量資料F；推算出對應於上述描繪差量資料F之上述主表面上之複數個點之座標偏移量，而求出描繪用座標偏移量資料G；以及描繪步驟，其使用上述描繪用座標偏移量資料G及上述圖案設計資料A，於上述空白光罩上進行描繪。A method for manufacturing a reticle, comprising: preparing a blank reticle formed with a film and a photoresist film on a main surface of the substrate, and drawing a specific transfer pattern by a drawing device; and the manufacturing method of the reticle includes The following steps: preparing the pattern design data A based on the design of the specific transfer pattern described above; obtaining the transfer surface correction data D indicating the main surface caused by holding the photomask on the exposure device a deformation amount, that is, a deformation amount of the main surface other than the self-weight bending component; and a height distribution data E at the time of drawing, the height distribution data E at the drawing indicates that the blank mask is placed on the upper surface with the main surface as the upper side a height distribution of the main surface in a state on the mounting table of the apparatus; and a difference amount F is obtained based on a difference between the height distribution data E and the transfer surface correction data D in the drawing; and the difference amount corresponding to the drawing is calculated a coordinate offset of a plurality of points on the main surface of the data F to obtain a coordinate offset data G for drawing; and a drawing step for using the same The above-described drawing coordinate offset data G and the pattern design data A are drawn on the blank mask.
一種光罩之製造方法，其包含：準備於基板之主表面上形成有薄膜及光阻膜之空白光罩，並藉由描繪裝置描繪特定之轉印用圖案；且該光罩之製造方法包括如下步驟：基於上述特定之轉印用圖案之設計而準備圖案設計資料A；藉由測定上述主表面之表面形狀而獲得基板表面形狀資料B；於在曝光裝置內保持上述光罩時，於上述主表面上特定出藉由保持構件而保持之複數個保持點，於基於上述保持構件之形狀而使上述複數個保持點位移時，使上述表面形狀中產生之位移反映於上述基板表面形狀資料B，而獲得轉印面形狀資料C；自上述轉印面形狀資料C中去除上述基板保持於上述保持構件之姿態下之自重彎曲成分，而獲得轉印面修正資料D；於以上述主表面為上側而將上述空白光罩載置於上述描繪裝置之載置台上之狀態下，測定上述主表面之高度分佈，而獲得描繪時高度分佈資料E；根據上述描繪時高度分佈資料E與上述轉印面修正資料D之差量而獲得描繪差量資料F；推算出對應於上述描繪差量資料F之上述主表面上之複數個點之座標偏移量，而求出描繪用座標偏移量資料G；以及描繪步驟，其使用上述描繪用座標偏移量資料G及上述圖案設計資料A，於上述空白光罩上進行描繪。A method for manufacturing a reticle, comprising: preparing a blank reticle formed with a film and a photoresist film on a main surface of the substrate, and drawing a specific transfer pattern by a drawing device; and the manufacturing method of the reticle includes The following steps: preparing the pattern design material A based on the design of the specific transfer pattern described above;Obtaining a substrate surface shape data B by measuring a surface shape of the main surface; and when the reticle is held in the exposure device, a plurality of holding points held by the holding member are specified on the main surface, based on the above When the shape of the member is held to shift the plurality of holding points, the displacement generated in the surface shape is reflected on the surface shape data B of the substrate, and the transfer surface shape data C is obtained; the substrate is removed from the transfer surface shape data C. The transfer surface correction data D is obtained by the self-weight bending component held in the posture of the holding member, and the blank mask is placed on the mounting table of the drawing device with the main surface as the upper side, and the above-described measurement is performed. The height distribution of the main surface is obtained, and the height distribution data E at the time of drawing is obtained; the difference amount data F is obtained based on the difference between the height distribution data E and the transfer surface correction data D described above; and the difference data corresponding to the above description is derived a coordinate offset of a plurality of points on the main surface of the F to obtain a coordinate offset data G for drawing; Drawing step of drawing by using the coordinate offset data G, and the pattern design data A, depicted on said photomask blank.
如構成2之光罩之製造方法，其特徵在於：在求出上述轉印面形狀資料C之步驟中使用有限元法。A method of manufacturing a photomask according to the second aspect is characterized in that the finite element method is used in the step of obtaining the transfer surface shape data C.
如構成1至3中任一項之光罩之製造方法，其特徵在於：在上述描繪步驟中使用修正圖案資料H而進行描繪，該修正圖案資料H係藉由基於上述描繪用座標偏移量資料G對上述圖案設計資料A進行修正而獲得。The method of manufacturing a photomask according to any one of the first to third aspect, characterized in that in the drawing step, the correction pattern data H is used for drawing, and the correction pattern data H is based on the coordinate offset based on the drawing The data G is obtained by correcting the above-mentioned pattern design data A.
如構成1至3中任一項之光罩之製造方法，其特徵在於：在上述描繪步驟中，基於上述描繪用座標偏移量資料G對上述描繪裝置所具有之座標系統進行修正，並使用所獲得之修正座標系統及上述圖案設計資料A而進行描繪。A method of manufacturing a photomask according to any one of claims 1 to 3, characterized in thatIn the drawing step, the coordinate system of the drawing device is corrected based on the drawing coordinate offset amount G, and the obtained correction coordinate system and the pattern design data A are used for drawing.
如構成1至5中任一項之光罩之製造方法，其特徵在於：在曝光裝置內保持上述光罩時，藉由保持構件而保持之複數個保持點配置於平面上。The method of manufacturing a photomask according to any one of the first to fifth aspect, wherein, when the photomask is held in the exposure apparatus, a plurality of holding points held by the holding member are disposed on a plane.
如構成1至6中任一項之光罩之製造方法，其特徵在於：上述基板表面形狀資料B係藉由如下操作而求出：在以主表面鉛垂之方式保持上述空白光罩或用以製成上述空白光罩之基板之狀態下，測定上述主表面上之複數個測定點之位置。The method of manufacturing a photomask according to any one of the first to sixth aspect, wherein the substrate surface shape data B is obtained by maintaining the blank mask or the main surface in a vertical manner. The position of the plurality of measurement points on the main surface is measured in a state in which the substrate of the blank mask is formed.
一種描繪裝置，其用於對在基板之主表面上形成有薄膜及光阻膜之空白光罩描繪轉印用圖案，且包括：高度測定機構，其在以上述主表面為上側而將上述空白光罩載置於載置台上之狀態下，測定上述主表面之高度分佈，而獲得描繪時高度分佈資料E；輸入機構，其輸入上述轉印用圖案之圖案設計資料A、表示上述基板之主表面之形狀之基板表面形狀資料B、關於將上述基板保持於曝光裝置時之保持狀態之資訊、及包含上述基板素材之物性值之基板物性資訊；運算機構，其使用上述基板表面形狀資料B、上述關於保持狀態之資訊及上述基板物性資訊運算轉印面修正資料D，該轉印面修正資料D係表示保持於曝光裝置內之狀態之上述基板之主表面形狀的資料、即去除自重彎曲成分後之資料，並求出上述描繪時高度分佈資料E與上述轉印面修正資料D之差量，而運算對應於所獲得之差量的上述主表面上之複數個點之描繪用座標偏移量資料G；及描繪機構，其使用上述描繪用座標偏移量資料G及上述圖案設計資料A，於上述空白光罩上進行描繪。A drawing device for drawing a transfer pattern on a blank mask having a thin film and a photoresist film formed on a main surface of a substrate, and comprising: a height measuring mechanism that sets the blank on an upper side of the main surface In the state in which the photomask is placed on the mounting table, the height distribution of the main surface is measured to obtain the height distribution data E at the time of drawing; the input mechanism inputs the pattern design data A of the transfer pattern, and indicates the main body of the substrate. The substrate surface shape data B of the shape of the surface, the information on the state in which the substrate is held in the exposure apparatus, and the substrate property information including the physical property value of the substrate material; and the calculation mechanism using the substrate surface shape data B, The information on the holding state and the substrate physical property information are used to calculate the transfer surface correction data D, which indicates the shape of the main surface of the substrate held in the exposure device.The material, that is, the data after the self-weight bending component is removed, and the difference between the height distribution data E at the drawing and the transfer surface correction data D is obtained, and a plurality of points on the main surface corresponding to the obtained difference are calculated. The drawing coordinate offset data G; and a drawing means for drawing on the blank mask using the drawing coordinate offset data G and the pattern design data A.
一種光罩之檢查方法，其使用檢查裝置，對在基板之主表面具有將薄膜圖案化而成之轉印用圖案之光罩進行檢查，且包括如下步驟：於將上述光罩載置於上述檢查裝置之載置台上之狀態下，進行形成於上述主表面之圖案之座標測定，而獲得圖案座標資料L；獲得轉印面修正資料D，該轉印面修正資料D表示因將上述光罩保持於曝光裝置而引起之上述主表面之變形量、即除自重彎曲成分以外之上述主表面之變形量；於以上述主表面為上側而將上述光罩載置於上述檢查裝置之載置台上之狀態下，測定上述主表面之高度分佈，而獲得檢查時高度分佈資料I；藉由求出上述檢查時高度分佈資料I與上述轉印面修正資料D之差量而獲得檢查差量資料J；推算出對應於上述檢查差量資料J之上述主表面上之複數個點之座標偏移量，而求出檢查用座標偏移量資料K；以及使用上述檢查用座標偏移量資料K及上述圖案座標資料L而進行上述轉印用圖案之檢查。A method for inspecting a photomask, wherein an inspection device is used to inspect a photomask having a transfer pattern patterned by a thin film on a main surface of a substrate, and comprising the steps of: placing the photomask described above On the mounting table of the inspection device, the coordinates of the pattern formed on the main surface are measured, and the pattern coordinate data L is obtained; the transfer surface correction data D is obtained, and the transfer surface correction data D indicates that the photomask is held by a deformation amount of the main surface caused by the exposure device, that is, a deformation amount of the main surface excluding the self-weight bending component; and a state in which the photomask is placed on the mounting table of the inspection device with the main surface as the upper side Next, the height distribution of the main surface is measured to obtain the height distribution data I during inspection; and the difference amount J is obtained by obtaining the difference between the height distribution data I and the transfer surface correction data D; Corresponding to the coordinate offset of the plurality of points on the main surface of the above-described inspection difference data J, the coordinate value K for inspection is obtained; and Said inspection coordinate offset data of the pattern coordinates K and L data to perform the transfer of the check pattern.
一種光罩之檢查方法，其使用檢查裝置，對在基板之主表面具有將薄膜圖案化而成之轉印用圖案之光罩進行檢查，且包括如下步驟：於將上述光罩載置於上述檢查裝置之載置台上之狀態下，進行形成於上述主表面之圖案之座標測定，而獲得圖案座標資料L；藉由測定上述主表面之表面形狀而獲得基板表面形狀資料B；於在曝光裝置內保持上述光罩時，於上述主表面上特定出藉由保持構件而保持之複數個保持點，於基於上述保持構件之形狀而使上述複數個保持點位移時，使上述表面形狀中產生之位移反映於上述基板表面形狀資料B，而獲得轉印面形狀資料C；自上述轉印面形狀資料C中去除上述基板保持於上述保持構件之姿態下之自重彎曲成分，而獲得轉印面修正資料D；於以上述主表面為上側而將上述光罩載置於上述檢查裝置之載置台上之狀態下，測定上述主表面之高度分佈，而獲得檢查時高度分佈資料I；藉由求出上述檢查時高度分佈資料I與上述轉印面修正資料D之差量而獲得檢查差量資料J；推算出對應於上述檢查差量資料J之上述主表面上之複數個點之座標偏移量，而求出檢查用座標偏移量資料K；以及使用上述檢查用座標偏移量資料K及上述圖案座標資料L而進行上述轉印用圖案之檢查。A method for inspecting a photomask, which uses an inspection device to inspect a photomask having a transfer pattern patterned by a thin film on a main surface of a substrate, and includes the following stepsStep: measuring the coordinates of the pattern formed on the main surface in a state where the photomask is placed on the mounting table of the inspection device, and obtaining the pattern coordinate data L; by measuring the surface shape of the main surface Obtaining a substrate surface shape data B; when the reticle is held in the exposure apparatus, a plurality of holding points held by the holding member are specified on the main surface, and the plurality of holding points are maintained based on the shape of the holding member When the displacement is performed, the displacement generated in the surface shape is reflected on the surface shape data B of the substrate, and the transfer surface shape data C is obtained; and the weight of the substrate is removed from the transfer surface shape data C in the posture of the holding member. By bending the component, the transfer surface correction data D is obtained; and the height distribution of the main surface is measured in a state where the photomask is placed on the mounting table of the inspection apparatus with the main surface as the upper side, and the height of the inspection is obtained. Distribution data I; obtained by obtaining the difference between the height distribution data I at the time of the inspection and the transfer surface correction data D a difference data J; calculating a coordinate offset corresponding to a plurality of points on the main surface of the inspection difference data J to obtain an inspection coordinate offset amount K; and using the above-described inspection coordinate offset The amount of data K and the pattern coordinate data L described above are used to inspect the transfer pattern.
如構成10之光罩之檢查方法，其特徵在於：在求出上述轉印面形狀資料C之步驟中使用有限元法。The inspection method of the photomask of the tenth aspect is characterized in that the finite element method is used in the step of obtaining the transfer surface shape data C.
如構成9至11中任一項之光罩之檢查方法，其特徵在於：上述轉印用圖案之檢查係使上述檢查用座標偏移量資料K反映於圖案設計資料A，並使用所獲得之修正設計資料M及上述圖案座標資料L而進行。The inspection method of the reticle according to any one of the items 9 to 11, characterized in that the inspection pattern of the transfer pattern is such that the inspection coordinate offset amount K is reflected in the pattern design data A, and the obtained pattern is obtained. Correct design data M and the above-mentioned pattern coordinate data LRow.
如構成9至11中任一項之光罩之檢查方法，其特徵在於：上述轉印用圖案之檢查係使上述檢查用座標偏移量資料K反映於上述圖案座標資料L，並使用所獲得之修正座標資料N及圖案設計資料A而進行。The inspection method of the reticle according to any one of the items 9 to 11, characterized in that the inspection pattern of the transfer pattern is such that the inspection coordinate offset amount K is reflected on the pattern coordinate data L and is obtained by using The correction of the coordinate data N and the pattern design data A is performed.
一種光罩之製造方法，其藉由將於主表面上形成有薄膜及光阻膜之空白光罩之上述薄膜圖案化而形成光罩，其特徵在於：包括如構成9至13中任一項之光罩之檢查方法。A photomask manufacturing method for forming a photomask by patterning the above-described thin film of a blank photomask having a thin film and a photoresist film formed on a main surface, comprising: forming any one of the compositions 9 to 13 The method of inspection of the reticle.
一種顯示裝置之製造方法，其包含：藉由對在主表面形成有轉印用圖案之光罩進行曝光而對具有被加工層之設備基板進行圖案轉印；且該顯示裝置之製造方法之特徵在於：使用藉由如構成1至7中任一項之製造方法而製造之光罩。A method of manufacturing a display device, comprising: patterning a device substrate having a processed layer by exposing a photomask having a transfer pattern formed on a main surface; and a feature of a method of manufacturing the display device A reticle manufactured by the manufacturing method of any one of 1 to 7 is used.
一種顯示裝置之製造方法，其包含：使用在各者之主表面上形成有轉印用圖案之複數個光罩及曝光裝置，對形成於設備基板上之複數個被加工層依序進行圖案轉印；且該顯示裝置之製造方法之特徵在於：上述複數個光罩係藉由如構成1至7中任一項之製造方法而製造而成者。A method of manufacturing a display device, comprising: sequentially patterning a plurality of processed layers formed on a device substrate by using a plurality of masks and exposure devices having a transfer pattern formed on a main surface of each of the substrates And a method of manufacturing the display device, wherein the plurality of photomasks are manufactured by the manufacturing method according to any one of the configurations 1 to 7.
一種光罩之檢查裝置，其對在基板之主表面具有將薄膜圖案化而成之轉印用圖案之光罩進行檢查，且包括：座標測定機構，其進行形成於上述主表面之圖案之座標測定，而獲得圖案座標資料L；高度測定機構，其於以上述主表面為上側而將上述光罩載置於載置台上之狀態下，測定上述主表面之高度分佈，而獲得檢查時高度分佈資料I；輸入機構，其輸入表示上述基板之主表面之形狀之基板表面形狀資料B、關於將上述基板保持於曝光裝置時之保持狀態之資訊、及包含上述基板素材之物性值之基板物性資訊；運算機構，其使用上述基板表面形狀資料B、上述關於保持狀態之資訊及上述基板物性資訊，運算表示保持於曝光裝置內之狀態之上述基板之主表面形狀、即去除自重彎曲成分後之主表面形狀的轉印面修正資料D，並求出上述檢查時高度分佈資料I與上述轉印面修正資料D之差量，而運算對應於所獲得之差量之上述主表面上之複數個點之檢查用座標偏移量資料K；及檢查機構，其使用上述檢查用座標偏移量資料K及圖案設計資料A而檢查上述光罩之轉印用圖案。An inspection apparatus for a photomask which inspects a photomask having a transfer pattern patterned by a thin film on a main surface of a substrate, and includes: a coordinate measuring mechanism that performs a coordinate formed on a pattern of the main surface Determination, and obtain pattern coordinate data L;The height measuring mechanism measures the height distribution of the main surface in a state where the photomask is placed on the mounting table with the main surface as the upper side, and obtains the height distribution data I at the time of inspection; the input mechanism has an input indicating The substrate surface shape data B of the shape of the main surface of the substrate, the information on the state of holding the substrate when the substrate is held in the exposure apparatus, and the substrate property information including the physical property value of the substrate material; and the calculation mechanism using the substrate surface The shape data B, the information on the holding state, and the substrate physical property information, and the transfer surface correction data D indicating the main surface shape of the substrate held in the exposure apparatus, that is, the main surface shape after removing the self-weight bending component, is calculated. And determining a difference between the height distribution data I and the transfer surface correction data D, and calculating an inspection coordinate offset data K corresponding to the plurality of points on the main surface of the obtained difference; and An inspection mechanism that inspects the reticle by using the above-described inspection coordinate offset data K and pattern design data A Printed patterns.
根據本發明，可提供一種能提高形成於被轉印體上之圖案之座標精度之光罩之製造方法、描繪裝置、光罩之檢查方法、光罩之檢查裝置、及顯示裝置之製造方法。According to the present invention, it is possible to provide a method of manufacturing a photomask capable of improving the coordinate accuracy of a pattern formed on a transfer target, a drawing device, a method of inspecting a photomask, an inspection device for a photomask, and a method of manufacturing the display device.
10‧‧‧載置台10‧‧‧ mounting table
11‧‧‧描繪機構11‧‧‧ depicting institutions
12‧‧‧測定機構12‧‧‧Measurement agency
13‧‧‧空白光罩13‧‧‧ Blank mask
14‧‧‧薄膜14‧‧‧ Film
15‧‧‧描繪資料製作機構15‧‧‧ depicting data production agencies
20‧‧‧表面20‧‧‧ surface
21‧‧‧基準表面21‧‧‧ reference surface
d‧‧‧偏移D‧‧‧Offset
H‧‧‧高度H‧‧‧ Height
O‧‧‧原點O‧‧‧ origin
P‧‧‧隔開距離P‧‧‧ separation distance
t‧‧‧基板之厚度T‧‧‧thickness of the substrate
Φ‧‧‧角度Φ‧‧‧ angle
△X‧‧‧X軸方向之偏移△X‧‧‧X axis deviation
△Y‧‧‧Y軸方向之偏移△Y‧‧‧Y-axis shift
圖1(a)係以主表面鉛垂之方式被保持之基板之側視圖，圖1(b)係該基板之前視圖。Fig. 1(a) is a side view of the substrate held by the main surface in a vertical manner, and Fig. 1(b) is a front view of the substrate.
圖2(a)係設定有複數個測定點之基板之剖面圖，圖2(b)係該基板之前視圖。Fig. 2(a) is a cross-sectional view of a substrate on which a plurality of measurement points are set, and Fig. 2(b) is a front view of the substrate.
圖3(a)係用於有限元法之遮罩模型之剖面圖，圖3(b)係該遮罩模型之前視圖。Fig. 3(a) is a cross-sectional view of a mask model for the finite element method, and Fig. 3(b) is a front view of the mask model.
圖4(a)係以膜面為上側之方式配置之遮罩模型之剖面圖，圖4(b)係以膜面為下側之方式配置之遮罩模型之剖面圖，圖4(c)係以膜面為上側之方式配置之遮罩模型之前視圖，圖4(d)係以膜面為下側之方式配置之遮罩模型之前視圖。4(a) is a cross-sectional view of a mask model in which the film surface is on the upper side, and FIG. 4(b) is a cross-sectional view of the mask model in which the film surface is on the lower side, FIG. 4(c) The mask front view is configured such that the film surface is the upper side, and FIG. 4(d) is the front view of the mask model configured such that the film surface is the lower side.
圖5(a)係藉由保持構件保持之位置上之遮罩模型之剖面圖。圖5(b)係遮罩模型之前視圖，以虛線表示藉由保持構件保持之位置。Figure 5 (a) is a cross-sectional view of the mask model at the position held by the retaining member. Fig. 5(b) is a front view of the mask model, and the position held by the holding member is indicated by a broken line.
圖6係構成遮罩模型之六面體之模式圖。Fig. 6 is a schematic view showing a hexahedron constituting a mask model.
圖7(a)-(e)係表示藉由在根據基板表面形狀資料B獲得轉印面形狀資料C後自轉印面形狀資料C中去除自重彎曲成分而獲得轉印面修正資料D之前的步驟之模式圖。7(a) to 7(e) are diagrams showing the steps before the transfer surface correction data D is obtained by removing the self-weight bending component from the transfer surface shape data C after obtaining the transfer surface shape data C based on the substrate surface shape data B. .
圖8係實施形態之光罩之製造方法中所使用之描繪裝置之概念圖。Fig. 8 is a conceptual diagram of a drawing device used in a method of manufacturing a photomask according to an embodiment.
圖9(a)-(d)係表示在根據描繪時高度分佈資料E與轉印面修正資料D之差量而獲得描繪差量資料F後，根據描繪差量資料F獲得描繪用座標偏移量資料G之前的步驟之模式圖。(a) and (d) of FIG. 9 show that the difference amount F is obtained by the difference between the height distribution data E and the transfer surface correction data D at the time of drawing, and the coordinate offset for drawing is obtained based on the difference amount data F. A pattern diagram of the steps before the data G.
圖10係用以計算膜面之形狀變動與因其所導致之座標偏移之關係之模式圖。Fig. 10 is a schematic view for calculating the relationship between the shape change of the film surface and the coordinate shift caused by the film surface.
圖11(a)-(d)係表示在根據檢查時高度分佈資料I與轉印面修正資料D之差量而獲得檢查差量資料J後，根據檢查差量資料J獲得檢查用座標偏移量資料K之前的步驟之模式圖。11(a) to (d) show the coordinate value of the inspection coordinate obtained based on the difference amount data J after the inspection difference data J is obtained based on the difference between the height distribution data I and the transfer surface correction data D at the time of inspection. Schematic diagram of the steps before the data K.
圖12(a)、(c)表示形成於測試用光罩之圖案之座標測定結果。圖12(b)、(d)表示針對將測試用光罩設置於曝光裝置之狀態下之座標偏移進行模擬而得之結果。Fig. 12 (a) and (c) show the coordinate measurement results of the pattern formed in the test reticle. 12(b) and 12(d) show the results of simulating the coordinate shift in the state in which the test reticle is placed on the exposure apparatus.
圖13(a)-(g)係用以對因描繪時與曝光時之光罩之主表面形狀之差異所引起的圖案之座標偏移進行說明之圖。13(a)-(g) are diagrams for explaining the coordinate shift of the pattern due to the difference in the shape of the main surface of the mask at the time of drawing and exposure.
圖14係以向量表現因高度之差異所引起的測定點之座標偏移之圖。Figure 14 shows the coordinate offset of the measurement point caused by the difference in height in vector representation.Figure.
本發明之光罩之製造方法包括以下步驟。The method of manufacturing a photomask of the present invention comprises the following steps.
於本發明中，於在基板之主表面形成有1層或複數層薄膜及光阻膜之空白光罩上進行描繪，以形成基於所要獲得之設備而設計之圖案從而製成光罩。因此，準備於基板之一主表面上形成有上述薄膜及光阻膜之空白光罩。In the present invention, a mask is formed on a blank mask on which a single layer or a plurality of thin films and a photoresist film are formed on a main surface of a substrate to form a pattern designed based on the device to be obtained, thereby forming a photomask. Therefore, a blank mask in which the above-mentioned thin film and photoresist film are formed on one main surface of the substrate is prepared.
所準備之空白光罩可使用公知者。A blank mask prepared can be used by a known person.
作為基板，可使用石英玻璃等透明基板。大小或厚度並無限制，作為用於顯示裝置用設備之製造者，可利用一邊為300mm~1800mm、厚度為5~15mm左右者。As the substrate, a transparent substrate such as quartz glass can be used. There is no limitation on the size or thickness. As a manufacturer of the device for a display device, one side can be used from 300 mm to 1800 mm and the thickness is about 5 to 15 mm.
於本申請案中，除了形成薄膜之前之基板以外，有時亦將於主表面形成一層或複數層薄膜之後、或者進而形成光阻膜之後之基板稱為「基板」(或空白光罩基板、光罩基板)。In the present application, in addition to the substrate before the formation of the film, the substrate may be referred to as a "substrate" (or a blank mask substrate, after forming a layer or a plurality of layers on the main surface or after forming the photoresist film. Photomask substrate).
於測定基板之主表面之平坦度或高度分佈之步驟中，實質上不會產生成膜於主表面之薄膜或光阻膜之厚度之影響。其原因在於，薄膜或光阻膜之膜厚足夠小，不會對上述測定產生實質性影響。In the step of measuring the flatness or height distribution of the main surface of the substrate, the influence of the thickness of the film or the photoresist film formed on the main surface is not substantially generated. The reason for this is that the film thickness of the film or the photoresist film is sufficiently small to have no substantial influence on the above measurement.
作為薄膜，除了對使用光罩時之曝光之光進行遮光之遮光膜(光學密度OD=3以上)以外，亦可為可使曝光之光部分透過之半透光膜(曝光之光透光率為2~80%)，或者亦可為相位偏移膜(例如，曝光之光之相位偏移量為150~210度、曝光之光透光率為2~30%左右者)或控制光之反射性之抗反射膜等光學膜。進而，亦可包含蝕刻終止膜等功能膜。既可為單一膜，亦可為複數層膜之積層。例如，可應用含Cr之遮光膜或抗反射膜、含Cr化合物或金屬矽化物之半透光膜或相位偏移膜等。亦可應用積層有複數層薄膜之空白光罩。藉由對該等複數層薄膜之各者之圖案化應用本發明之方法，可製成具有優異之座標精度之轉印性之光罩。As a film, in addition to a light-shielding film (optical density OD=3 or more) that shields light exposed when a photomask is used, it may be a semi-transmissive film through which partial light can be transmitted (exposure light transmittance) 2~80%), or may be a phase shift film (for example, the phase shift of the exposed light is 150-210 degrees, the light transmittance of the exposure is about 2~30%) or the control light An optical film such as a reflective anti-reflection film. Further, a functional film such as an etching stopper film may be contained. It can be a single film or a laminate of a plurality of layers. For example, a light-shielding film or an anti-reflection film containing Cr, a semi-transparent film containing a Cr compound or a metal telluride, or a phase shift may be applied.Transfer film, etc. A blank reticle with a plurality of layers of film can also be applied. By applying the method of the present invention to the patterning of each of the plurality of layers of the film, a transfer mask having excellent coordinate accuracy can be produced.
形成於最表面之光阻既可為正型亦可為負型。作為顯示裝置用光罩，正型較為有用。The photoresist formed on the outermost surface may be either positive or negative. As a mask for a display device, a positive type is useful.
圖案設計資料係基於欲獲得之設備(顯示裝置等)而設計之轉印用圖案之資料。The pattern design data is information on a transfer pattern designed based on a device (display device, etc.) to be obtained.
藉由本發明之光罩而製造之設備之用途並無限制。例如，藉由應用於構成液晶顯示裝置或有機EL顯示裝置之各構成物之各層，可獲得優異之效果。例如，本發明可有利地用於具有間距未達7μm之線與間隙圖案(線或間隙中存在線寬(CD：Critical Dimension，臨界尺寸)為4μm或未達3μm之部分者等)或直徑未達5μm之孔圖案等之微細之設計之顯示裝置用光罩等。The use of the device manufactured by the photomask of the present invention is not limited. For example, an excellent effect can be obtained by being applied to each layer constituting each constituent of a liquid crystal display device or an organic EL display device. For example, the present invention can be advantageously applied to a line and gap pattern having a pitch of less than 7 μm (a line having a line width (CD: Critical Dimension) of 4 μm or less than 3 μm, etc.) or a diameter not A photomask or the like for a display device having a fine design such as a hole pattern of 5 μm.
若圖案設計資料不加以修正便直接使用而進行描繪，則會因描繪時(載置於描繪裝置內時)與曝光時(保持於曝光裝置內時)之膜面形狀之差異而導致於被轉印體上形成轉印用圖案時之座標精度不足(參照圖13)。因此，藉由以下之步驟進行修正。If the pattern design data is directly used for rendering without correction, it will be caused by the difference in the shape of the film surface during drawing (when placed in the drawing device) and during exposure (when held in the exposure device). The coordinate accuracy when the transfer pattern is formed on the print is insufficient (see Fig. 13). Therefore, the correction is made by the following steps.
獲得轉印面修正資料D，該轉印面修正資料D表示因將光罩保持於曝光裝置中而引起之膜面之變形量、即除自重彎曲成分以外之變形量。具體而言，可如以下般進行。The transfer surface correction data D is obtained, and the transfer surface correction data D indicates the amount of deformation of the film surface caused by holding the photomask in the exposure device, that is, the amount of deformation other than the self-weight bending component. Specifically, it can be carried out as follows.
藉由測定上述主表面(膜面側)之表面形狀而獲得基板表面形狀資料B。The substrate surface shape data B was obtained by measuring the surface shape of the main surface (film side).
例如，能以主表面鉛垂之方式保持測定對象之基板，從而成為因自重所致之彎曲實質上不會影響主表面形狀之狀態，並藉由平坦度測定機進行測定(參照圖1)。For example, the substrate to be measured can be held in such a manner that the main surface is vertical, thereby becomingThe bending due to its own weight does not substantially affect the state of the main surface shape, and is measured by a flatness measuring machine (see Fig. 1).
測定可藉由使用對所照射之光(雷射等)之反射光進行檢測等光學性測定方法之平坦度測定機而進行。作為測定裝置之例，例如可列舉黑田精工股份有限公司製造之平面度測定機FTT系列、或日本專利特開2007-46946號公報中所記載者等。The measurement can be performed by a flatness measuring machine using an optical measuring method such as detecting the reflected light of the irradiated light (such as a laser). Examples of the measuring device include, for example, a flatness measuring machine FTT series manufactured by Kuroda Seiko Co., Ltd., or a Japanese Patent Publication No. 2007-46946.
此時，可於整個主表面上設定在主表面上等間隔(將隔開距離設為間距P)地沿XY方向描繪之格子之交點(格子點)，將其作為測定點(參照圖2)。In this case, the intersection (lattice point) of the grid drawn in the XY direction at equal intervals on the main surface (the distance is the pitch P) can be set as the measurement point (see FIG. 2). .
例如，可使用如具有以下功能之平坦度測定機：以鉛垂之平面為基準面，針對各測定點對該基準面與上述各測定點之Z方向(參照圖2)之距離進行測定。藉由該測定，可把握基板之主表面之形狀(平坦度)，藉此可獲得基板表面形狀資料B。於圖2中表示將P設為10mm之例。For example, a flatness measuring machine having a function of measuring the distance between the reference surface and the Z direction (see FIG. 2) of each of the measurement points for each measurement point using the vertical plane as a reference surface can be used. By this measurement, the shape (flatness) of the main surface of the substrate can be grasped, whereby the substrate surface shape data B can be obtained. An example in which P is set to 10 mm is shown in FIG.
如圖2(a)所示，測定主表面上之所有測定點之Z方向之高度。藉此，以平坦度映射圖之形式獲得基板表面形狀資料B(參照圖7(a))。As shown in Fig. 2(a), the height in the Z direction of all the measurement points on the main surface was measured. Thereby, the substrate surface shape data B is obtained in the form of a flatness map (see FIG. 7(a)).
再者，於獲取上述基板表面形狀資料B時，對於基板背面側(與成為膜面之主表面相反之面)，亦在與膜面側相對應之位置設定測定點並進行同樣之測定，藉此可預先求出基板背面形狀資料及各測定點上之基板之厚度(膜面與背面之距離)分佈。基板之厚度分佈亦記為TTV(Total thickness variation，總厚度變異)。該資料係於後面階段使用。Further, when the substrate surface shape data B is obtained, the measurement point is set at the position corresponding to the film surface side on the back surface side of the substrate (the surface opposite to the main surface on which the film surface is formed), and the same measurement is performed. In this way, the back surface shape data of the substrate and the thickness (distance between the film surface and the back surface) of the substrate at each measurement point can be obtained in advance. The thickness distribution of the substrate is also referred to as TTV (Total thickness variation). This information is used in later stages.
關於測定點之設定，就由基板之尺寸所決定之測定時間之觀點及修正精度之觀點而言，可決定隔開距離P。隔開距離P例如可設為2≦P≦20(mm)，更佳為設為5≦P≦15(mm)。Regarding the setting of the measurement point, the separation distance P can be determined from the viewpoint of the measurement time determined by the size of the substrate and the correction accuracy. The separation distance P can be, for example, 2 ≦ P ≦ 20 (mm), and more preferably 5 ≦ P ≦ 15 (mm).
又，於進行膜面側之表面平坦度測定之後，可根據測定值求出最小平方平面。將該面之中心作為原點O。Further, after the surface flatness measurement on the film surface side is performed, the measured value can be obtained.The least square plane. The center of the face is taken as the origin O.
其次，於該基板成為光罩時，考慮該光罩於曝光裝置內被保持之狀態。設置於曝光裝置中之光罩係以膜面朝向下側之狀態被保持。此時，於主表面上特定出藉由保持構件而保持之複數個保持點，於基於保持構件之形狀而使該複數個保持點位移時，使光罩表面形狀中產生之位移反映於基板表面形狀資料B，而獲得轉印面形狀資料C(參照圖7(a)、(b))。Next, when the substrate is a photomask, the state in which the photomask is held in the exposure apparatus is considered. The photomask provided in the exposure apparatus is held in a state in which the film surface faces the lower side. At this time, a plurality of holding points held by the holding member are specified on the main surface, and when the plurality of holding points are displaced based on the shape of the holding member, the displacement generated in the surface shape of the mask is reflected on the surface of the substrate. The shape data B is obtained, and the transfer surface shape data C is obtained (see FIGS. 7(a) and (b)).
於該步驟中，較佳為應用有限元法。因此，作為其準備階段，製作遮罩模型(圖3)。In this step, it is preferred to apply the finite element method. Therefore, as a preparation stage, a mask model (Fig. 3) is produced.
藉由上述之膜面側及背面側之平坦度測定而獲得兩表面之形狀資料。此處，對於最外周之測定點，於基板端部側在隔開1間距量之位置進而分別追加1點假想之測定點，並將該假想測定點之Z方向之高度設定為與最外周之測定點相同之高度。其係為了於以下所使用之有限元法中正確地反映基板之尺寸及重量。又，於膜面側與背面側之相對應之測定點之中間亦設定假想測定點，並設定相對應之2個測定值之中央值。繼而，以直線連接鄰接之測定點(包括假想測定點在內)(參照圖3(a)、(b))。The shape data of the two surfaces was obtained by measuring the flatness of the film side and the back side described above. Here, for the measurement point of the outermost circumference, one virtual measurement point is added to the end portion of the substrate at a distance of one pitch, and the height of the virtual measurement point in the Z direction is set to the outermost circumference. The same height is measured. It is intended to accurately reflect the size and weight of the substrate in the finite element method used below. Further, a virtual measurement point is also set in the middle of the measurement point corresponding to the film surface side and the back surface side, and the median value of the two corresponding measurement values is set. Then, the adjacent measurement points (including the virtual measurement points) are connected in a straight line (see FIGS. 3(a) and (b)).
再者，上述假想測定點並不限定於設置於膜面及背面之測定值之中央之情形，亦可沿厚度方向等間隔地設置2點或3點。In addition, the above-mentioned virtual measurement point is not limited to the case where it is provided in the center of the measured value of the film surface and the back surface, and may be provided at two or three points at equal intervals in the thickness direction.
於圖4(a)~(d)中表示自表面與背面兩面及剖面觀察該遮罩模型之模式圖。4(a) to 4(d) are schematic views showing the mask model viewed from both the front and back sides and the cross section.
其次，於該遮罩模型中，設定光罩於曝光裝置內被保持於保持構件之複數個保持點。其係於將光罩搭載於曝光裝置內時，與保持構件接觸、或者因吸附而被保持、約束之點，且因曝光裝置之製造商或世代、尺寸而不同，故而係基於所使用之曝光裝置而決定。Next, in the mask model, the mask is set to be held in the exposure device by a plurality of holding points of the holding member. When the photomask is mounted in the exposure apparatus, it is held in contact with the holding member, or is held and restrained by adsorption, and is different depending on the manufacturer, generation, and size of the exposure apparatus. Therefore, it is based on the exposure used. Determined by the device.
於本態樣中，作為一例，對在基板之相對向之兩邊之附近，平行地配置之保持構件接觸於基板之膜面側之情形進行說明。即，於圖5(b)所示之模型中，將處於虛線上之測定點作為保持點。於曝光裝置內，保持點因與保持構件接觸而受到約束從而強制性位移，由此，因基板所具有之物性而使得位移波及整個膜面形狀。In this aspect, as an example, a case where the holding members arranged in parallel in the vicinity of the opposite sides of the substrate are in contact with the film surface side of the substrate will be described. That is, in the model shown in FIG. 5(b), the measurement point on the broken line is taken as the holding point. In the exposure apparatus, the holding point is restrained by the contact with the holding member to be forcibly displaced, whereby the displacement affects the entire film surface shape due to the physical properties of the substrate.
於圖5(a)所示之模型中，以成為保持點之測定點之位置於Z軸上變為零之方式設定強制位移量。再者，Z軸方向之零位置係參照已設定之最小平方平面(及處於其上之原點)。例如，若成為保持點之某一測定點之膜面側平坦度之值為5μm，則其測定點之強制位移量為「-5μm」。In the model shown in Fig. 5 (a), the forced displacement amount is set such that the position at which the measurement point of the holding point becomes zero on the Z axis. Furthermore, the zero position in the Z-axis direction refers to the set squared least square plane (and the origin on it). For example, when the value of the flatness of the film surface side at a certain measurement point of the holding point is 5 μm, the amount of forced displacement of the measurement point is "-5 μm".
其次，將上述中所準備之模型條件輸入至有限元法(FEM，Finite Element Method)之軟體中，推算出保持點以外之各測定點因上述強制位移而進行何種位移。藉此，獲得表示曝光裝置內之光罩之膜面形狀之「轉印面形狀資料C」。於該轉印面形狀資料C中包含因重力所致之彎曲成分(參照圖7(b))。Next, the model conditions prepared as described above are input to the software of the Finite Element Method (FEM), and it is estimated which displacement of each measurement point other than the holding point is due to the above-described forced displacement. Thereby, the "transfer surface shape data C" indicating the film surface shape of the photomask in the exposure apparatus is obtained. The transfer surface shape data C includes a bending component due to gravity (see FIG. 7(b)).
於應用有限元法時，需要各種物性值或條件之參數。於本態樣中，作為示例，設為以下者。When applying the finite element method, various physical property values or conditions are required. In this aspect, as an example, the following is set.
[基板(石英玻璃)物性值條件][Substrate (quartz glass) physical property value conditions]
楊氏模數E：7341kg/mm^2Young's modulus E: 7341kg/mm^ 2
泊松比v：0.17Poisson's ratiov : 0.17
重量密度m：0.0000022kg/mm^3Weight density m: 0.0000022kg/mm^ 3
[遮罩模型(Mask Model)條件][Mask Model Condition]
各測定點之座標值(x、y、z)檔案：(針對膜面、背面、中間點之所有測定點)Coordinate values (x, y, z) of each measurement point: (for all measurement points of the film surface, back surface, intermediate point)
連接測定點之條件檔案：六面體Condition file for connecting measurement points: hexahedron
於本態樣中，關於膜面與背面之相對應之測定點、其中間點(包括假想測定點在內)，將鄰接者彼此均連接起來，藉此製成六面體集成之模型(參照圖6)。In this aspect, the measurement point and the middle point of the film surface and the back surface (package)In addition to the imaginary measurement point, the adjacent persons are connected to each other to form a hexahedral integrated model (refer to FIG. 6).
[保持條件][keep condition]
設定強制位移量之檔案：上述保持點之強制位移量Set the file of the forced displacement: the forced displacement of the above holding point
繼而，藉由有限元法而算出保持點以外之所有測定點之位移量。Then, the displacement amount of all the measurement points except the holding point is calculated by the finite element method.
保持於曝光裝置內之光罩因作用於其之力之平衡而靜止。此時，自重向量g-應力向量σ=0成立。The reticle held in the exposure device is stationary due to the balance of forces acting on it. At this time, the self-weight vector g-stress vector σ=0 holds.
此處，應力向量σ=[k]×位移量向量uHere, the stress vector σ = [k] × displacement vector u
(其中，[k]為由楊氏模數e及泊松比v構成之矩陣)(where [k] is a matrix composed of Young's modulus e and Poisson's ratiov )
自重向量g=要素體積×重量密度m×重力方向向量。Self weight vector g = element volume x weight density m x gravity direction vector.
此處，各要素如圖6所示般，為各個六面體。Here, each element is a hexahedron as shown in FIG.
關於全部要素(基板整體)，若將其疊加，則g1-σ1+g2-σ2+g3-σ3+．．．=0Regarding all the elements (the whole substrate), if they are superimposed, then g1-σ1+g2-σ2+g3-σ3+. . . =0
g1+g2+g3+．．．=σ1+σ2+σ3+．．．=[k1]u1+[k2]u2+[k3]u3+．．．G1+g2+g3+. . . =σ1+σ2+σ3+. . . =[k1]u1+[k2]u2+[k3]u3+. . .
此處，位移量向量(u1、u2、u3、．．．)成為各測定點上之位移量，且為所要求出之數值。但保持點上之位移量向量如上述般作為強制位移量而輸入。Here, the displacement amount vectors (u1, u2, u3, ...) become the displacement amounts at the respective measurement points, and are the required values. However, the displacement amount vector at the holding point is input as a forced displacement amount as described above.
藉由利用上述有限元法而算出之各測定點之位移量向量，可獲得保持於曝光裝置內之光罩之膜面形狀之資料。即，其係藉由曝光裝置進行圖案轉印時之光罩之膜面形狀之資料即「轉印面形狀資料C」。The data of the film surface shape of the photomask held in the exposure apparatus can be obtained by the displacement vector of each measurement point calculated by the finite element method described above. In other words, it is a "transfer surface shape data C" which is a material of the film surface shape of the reticle when the pattern is transferred by the exposure device.
於定量地算出保持於曝光裝置中之基板膜面之變形方面，上述有限元法非常有效。此處，無法忽視作用於基板之重力之影響。但於以下之步驟中，為了求出描繪修正圖案資料，必須自「轉印面形狀資料C」中去除重力彎曲成分，以不產生藉由曝光裝置中所配備之重力彎曲成分之補償機構而進行之修正及重複修正。因此，求出自上述轉印面形狀資料C中去除因基板之自重彎曲所致之變形量、即自重彎曲成分而得之轉印面修正資料D(圖7(e))。The above finite element method is very effective in quantitatively calculating the deformation of the substrate film surface held in the exposure apparatus. Here, the influence of the gravity acting on the substrate cannot be ignored. However, in the following steps, in order to obtain the correction pattern data, it is necessary to remove the gravity bending component from the "transfer surface shape data C" so as not to generate a compensation mechanism by the gravity bending component provided in the exposure apparatus. Amend and repeat the correction. Therefore, the transfer surface correction data D obtained by removing the deformation amount due to the self-weight bending of the substrate, that is, the self-weight bending component, from the transfer surface shape data C is obtained (FIG. 7(e)).
因此，推算出僅因自重彎曲所致之變形成分(自重彎曲成分)。即，針對與上述基板相同之材料、形狀、尺寸且理想形狀(主平面彼此平行之理想平面)之基板(亦稱為理想基板)，求出主表面之僅因重力彎曲所致之變形(圖7(d))。亦將其稱為參照形狀資料C1。此處，可與上述同樣地使用有限元法。Therefore, the deformation component (self-weight bending component) caused only by the self-weight bending is derived. That is, for a substrate (also referred to as an ideal substrate) having the same material, shape, size, and ideal shape (an ideal plane in which the principal planes are parallel to each other), the deformation of the main surface due to gravity bending is obtained. 7(d)). This is also referred to as reference shape data C1. Here, the finite element method can be used in the same manner as described above.
或者，亦可準備特定之基準基板並針對其而按照上述II-1~II-2之順序求出因自重彎曲所致之變形，以代替求出假想之理想基板之重力彎曲成分。亦可使用該情形所獲得之參照形狀資料C2以代替上述C1。於對特定之曝光裝置已確定基準基板之規格之情形時，可應用該方法。Alternatively, a specific reference substrate may be prepared, and deformation due to self-weight bending may be obtained in the order of II-1 to II-2 described above instead of obtaining a gravity bending component of a virtual ideal substrate. Instead of the above C1, the reference shape data C2 obtained in this case can also be used. This method can be applied when the specification of the reference substrate has been determined for a particular exposure device.
繼而，若自已求出之轉印面形狀資料C中減去C1(或C2)而求出差量，則可獲得轉印面修正資料D。(圖7(e))Then, if C1 (or C2) is subtracted from the obtained transfer surface shape data C and the difference is obtained, the transfer surface correction data D can be obtained. (Fig. 7(e))
圖8係本發明之實施形態之光罩之製造方法中所使用之描繪裝置之概念圖。該描繪裝置至少具有載置台10、描繪機構11、高度測定機構12及描繪資料製作機構15(運算機構)。於載置台10之上固定有空白光罩13。空白光罩於單面形成有薄膜14，並以形成有薄膜14之面朝上之方式配置。描繪機構11係例如照射雷射等能量束，用以於描繪步驟中對固定於載置台10上之帶有光阻膜之空白光罩13描繪特定之轉印用圖案者。高度測定機構12例如藉由氣墊等而與空白光罩13表面隔開一定距離而配置。高度測定機構12係高度根據空白光罩13之表面形狀所決定的高度之變化而上下移動之機構，可測定空白光罩13主表面之高度(Z方向)。Fig. 8 is a conceptual diagram of a drawing device used in a method of manufacturing a photomask according to an embodiment of the present invention. The drawing device includes at least a mounting table 10, a drawing unit 11, a height measuring unit 12, and a drawing data creating unit 15 (computing means). A blank mask 13 is fixed on the mounting table 10. The blank mask is formed with a film 14 on one side, and is disposed such that the surface on which the film 14 is formed faces upward. The drawing means 11 is for example irradiated with an energy beam such as a laser for drawing a specific transfer for the blank mask 13 with a photoresist film fixed to the mounting table 10 in the drawing step.Patterner. The height measuring mechanism 12 is disposed at a predetermined distance from the surface of the blank mask 13 by, for example, an air cushion. The height measuring mechanism 12 is a mechanism that moves up and down according to the change in height determined by the surface shape of the blank mask 13, and the height (Z direction) of the main surface of the blank mask 13 can be measured.
再者，作為測定表面之高度之方法，並無限定，除了上述以外，亦可使用如下方法：使用用以將與高度測定機構12同樣之構件維持於一定位置之空氣流量而進行測定之方法；測定間隙間之靜電電容之方法；藉由使用雷射之脈衝計數、光學性聚焦而進行測定之方法等。Further, the method of measuring the height of the surface is not limited, and a method of measuring the air flow rate for maintaining the member similar to the height measuring mechanism 12 at a constant position may be used in addition to the above; A method of measuring the electrostatic capacitance between the gaps; a method of performing measurement by using pulse counting of a laser, optical focusing, and the like.
以主表面(膜面側)為上側將空白光罩載置於此種描繪裝置之載置台上，進行上述所設定之測定點(隔開距離P)上之膜面之高度測定。將其製成映射圖而為圖9(b)所示之描繪時高度分佈資料E。The blank mask was placed on the mounting table of the drawing device with the main surface (membrane surface side) as the upper side, and the height of the film surface at the set measurement point (separation distance P) was measured. This is made into a map and is the height distribution data E at the time of drawing shown in FIG. 9(b).
如上所述，認為該高度分佈自理想平面之變形因素係(1)載置台面之凹凸、(2)因於載置台上夾雜異物而導致之基板之彎曲、(3)空白光罩之膜面之凹凸、及(4)因空白光罩之背面之凹凸所引起的膜面之凹凸As described above, it is considered that the deformation factor of the height distribution from the ideal plane is (1) the unevenness of the table top, (2) the bending of the substrate due to inclusion of foreign matter on the mounting table, and (3) the film surface of the blank mask. The unevenness of the film surface and (4) the unevenness of the film surface caused by the unevenness of the back surface of the blank mask
累積而成者。繼而，對該狀態之空白光罩之膜面進行描繪。Accumulated. Then, the film surface of the blank mask of this state is drawn.
其次，獲得所獲得之描繪時高度分佈資料E與之前所求出之轉印面修正資料D的差量。其係描繪時之空白光罩之膜面形狀與曝光時之光罩之膜面形狀之差(但除重力彎曲成分以外)。其為描繪差量資料F(參照圖9(c))。Next, the difference between the obtained height distribution data E at the drawing and the previously obtained transfer surface correction data D is obtained. It is the difference between the film surface shape of the blank mask and the film surface shape of the mask when exposed (except for the gravity bending component). This is a drawing of the difference data F (refer to FIG. 9(c)).
保持於曝光裝置內之光罩膜面自理想平面之變形因素係(5)光罩膜面之凹凸(與上述(3)實質上相同)、(6)因被光罩保持構件保持而強制性地形成之膜面之變形、及(7)因自重所致之彎曲The deformation factor of the mask film surface held in the exposure apparatus from the ideal plane is (5) the unevenness of the mask film surface (substantially the same as (3) above), and (6) is mandatory by the mask holding member. Deformation of the film surface formed by the ground, and(7) Bending due to its own weight
累積而成者。Accumulated.
因此，由於該2個膜面形狀之差異(但除(7)以外)係導致產生轉印所致之座標偏移之要素，故可謂應當用於「圖案設計資料A」之修正。其即為上述描繪差量資料F(參照圖9(c))。Therefore, since the difference in the shape of the two film faces (except for (7)) causes the coordinate offset due to the transfer, it is supposed to be used for the correction of the "pattern design data A". This is the above-described difference amount data F (see FIG. 9(c)).
將上述描繪差量資料F轉換為XY座標上之位移(座標偏移量)。例如，可藉由以下之方法進行轉換(參照圖10)。The above-described depicted difference data F is converted into a displacement (coordinate offset) on the XY coordinates. For example, the conversion can be performed by the following method (refer to FIG. 10).
圖10係描繪裝置之載置台10上之基板13之剖面之放大圖。省略薄膜14。如上所述，配置於載置台10上之基板13之表面20之形狀係因複數種因素而自理想平面變形而成者。FIG. 10 is an enlarged view showing a cross section of the substrate 13 on the mounting table 10 of the apparatus. The film 14 is omitted. As described above, the shape of the surface 20 of the substrate 13 disposed on the mounting table 10 is deformed from an ideal plane due to a plurality of factors.
於描繪時高度分佈資料E中，於鄰接於高度0之測定點(即，高度與基準表面21一致之測定點)之測定點上之高度為H之情形時，因該高度之差異所導致之基板13之表面20與基準表面21所成之角之角度Φ係以下式表示，sinΦ=H/Pitch (式1)In the height-distribution data E at the time of drawing, when the height at the measurement point adjacent to the measurement point of the height 0 (that is, the measurement point whose height coincides with the reference surface 21) is H, the difference in height is caused by The angle Φ between the surface 20 of the substrate 13 and the reference surface 21 is expressed by the following formula, sinΦ=H/Pitch (Formula 1)
(Pitch：測定點之隔開距離、即與鄰接之測定點之距離P)。(Pitch: the separation distance of the measurement points, that is, the distance P from the adjacent measurement point).
再者，於上述中，H/Pitch亦可認作基板表面之高度方向之梯度。Furthermore, in the above, H/Pitch can also be regarded as a gradient in the height direction of the substrate surface.
再者，若Φ之值足夠小，則亦可近似為下式。Furthermore, if the value of Φ is sufficiently small, it can also be approximated as follows.
Φ=H/Pitch (式1')Φ=H/Pitch (Formula 1')
於以下之說明中，使用(式1)。In the following description, (Formula 1) is used.
於上述情形時，因該高度之差異所引起之測定點之X軸方向之偏移d可藉由下式求出。In the above case, the offset d of the X-axis direction of the measurement point due to the difference in height can be obtained by the following equation.
d=sinΦ×t/2=H×(t/2Pitch) (式2)d=sinΦ×t/2=H×(t/2Pitch) (Equation 2)
再者，於上述中，若Φ足夠小，則亦可近似為下式。Further, in the above, if Φ is sufficiently small, it may be approximated as follows.
d=Φ×t/2=H×(t/2Pitch)．．．．．(式2')d = Φ × t / 2 = H × (t / 2 Pitch). . . . . (Formula 2')
或者，因高度之差異所引起之測定點之座標偏移量亦可藉由使用向量之方法而算出。圖14係以向量表現因高度之差異所引起之測定點之座標偏移之圖。於描繪時高度分佈資料E中，考慮利用任意3處測定點製作之傾斜面。此時，以下述之式表示傾斜面與X軸方向之偏移△X、傾斜面與Y軸方向之偏移△Y。Alternatively, the coordinate offset of the measurement point due to the difference in height can also be calculated by using a vector method. Fig. 14 is a graph showing the coordinate shift of the measurement point caused by the difference in height in vector. In the height-distribution data E at the time of drawing, an inclined surface which is produced by using any three measurement points is considered. At this time, the deviation ΔX between the inclined surface and the X-axis direction and the deviation ΔY between the inclined surface and the Y-axis direction are expressed by the following equations.
△X=t/2×cosθx △Y=t/2×cosθy (式3)ΔX=t/2×cos θx ΔY=t/2×cos θy (Formula 3)
可利用任意3處測定點製作2條傾斜向量。根據該2條傾斜向量之外積計算而製作相對於傾斜面之法線向量。Two tilt vectors can be created using any three measurement points. A normal vector with respect to the inclined surface is created based on the two oblique vector outer product calculations.
進而，根據法線向量與X軸單位向量之內積計算而算出cosθx，根據法線向量與Y軸單位向量之內積計算而算出cosθy。Further, cos θx is calculated from the inner product of the normal vector and the X-axis unit vector, and cos θy is calculated from the inner product of the normal vector and the Y-axis unit vector.
將所算出之cosθx及cosθy代入至(式3)，最終可算出X軸方向之偏移△X及Y軸方向之偏移△Y。By substituting the calculated cos θx and cos θy into (Expression 3), the offset ΔX in the X-axis direction and the shift ΔY in the Y-axis direction can be finally calculated.
再者，此處，t為基板之厚度。各測定點之厚度t包含於已於上述中獲取之TTV中。再者，此處亦可不使用TTV之數值而使用基板之厚度之平均值。Here, t is the thickness of the substrate. The thickness t of each measurement point is included in the TTV which has been obtained in the above. Furthermore, the average value of the thickness of the substrate may be used here without using the value of the TTV.
因此，針對基板13上之全部測定點，求出相當於轉印面修正資料D與描繪時高度分佈資料E之差量之高度，並對所獲得之描繪差量資料F在X方向、Y方向計算座標偏移量，藉此可獲得描繪用座標偏移量資料G。Therefore, the height corresponding to the difference between the transfer surface correction data D and the height distribution data E at the drawing is obtained for all the measurement points on the substrate 13, and the obtained difference data F is calculated in the X direction and the Y direction. The coordinate offset amount, whereby the coordinate value G for drawing is obtained.
使用上述中所獲得之描繪用座標偏移量資料G及「圖案設計資料A」，進行修正圖案資料H之描繪。The drawing pattern data H is drawn using the drawing coordinate offset data G and the "pattern design data A" obtained as described above.
此時，亦可基於描繪用座標偏移量資料G而修正圖案設計資料A，從而求出描繪修正圖案資料H(未圖示)，並基於該描繪修正圖案資料H而進行描繪。At this time, the pattern design data A can be corrected based on the coordinate index data G for drawing, and the drawing correction pattern data H (not shown) can be obtained, and the pattern can be corrected based on the drawing.The material H is drawn.
於修正圖案設計資料A時，亦可將針對每一測定點而獲得之描繪用座標偏移量資料G進行加工而使用。例如，亦可藉由使用最小平方法之每一測定點之資料之內插、或特定之規則而進行標準化之後，使描繪用座標偏移量資料G反映於圖案設計資料A。When the pattern design data A is corrected, the drawing offset data G obtained for each measurement point may be processed and used. For example, it is also possible to cause the drawing coordinate offset data G to be reflected in the pattern design data A by performing interpolation using data interpolation of each measurement point of the least square method or a specific rule.
或者，亦可基於描繪用座標偏移量資料G而修正上述描繪裝置所具有之座標系統，並使用所獲得之修正座標系統及上述「圖案設計資料A」而進行描繪。其原因在於，許多描繪裝置具有於對其所具有之座標系統賦予特定之修正後，基於該修正座標之描繪功能。Alternatively, the coordinate system of the drawing device may be corrected based on the coordinate value G for drawing, and the obtained correction coordinate system and the "pattern design data A" may be used for drawing. The reason for this is that many rendering devices have a rendering function based on the modified coordinates after giving a specific correction to the coordinate system they have.
此時所使用之描繪用座標偏移量資料G亦與上述同樣地可進行加工。The drawing coordinate offset data G used at this time can also be processed in the same manner as described above.
再者，本發明之描繪方法並不限定於上述態樣。Furthermore, the drawing method of the present invention is not limited to the above.
於描繪時，亦可於轉印用圖案區域外適當加入標記圖案等而進行。如後文所述，可於此處追加座標測定用標記圖案而進行描繪。At the time of drawing, a mark pattern or the like may be appropriately added outside the transfer pattern region. As will be described later, the coordinate measurement marker pattern can be added and drawn.
例如，如上所述，曝光裝置所具有之保持構件之形狀有時會根據裝置而不同。於上述說明中，對在基板之相對向之兩邊之附近，平行地配置之保持構件接觸於基板之膜面側之情形進行了說明，但於具備沿基板之四邊的4個直線狀之保持構件之曝光裝置中，亦可應用本發明。只要在賦予上述有限元法之計算時之模型條件及強制位移量時適當變更該等模型條件及強制位移量而進行即可。For example, as described above, the shape of the holding member which the exposure apparatus has may sometimes differ depending on the apparatus. In the above description, the case where the holding members arranged in parallel in the vicinity of the opposite sides of the substrate are in contact with the film surface side of the substrate, but the four linear holding members along the four sides of the substrate are provided. The present invention can also be applied to an exposure apparatus. The model condition and the forcible displacement amount may be appropriately changed when the model condition and the forcible displacement amount at the time of calculation of the finite element method are given.
又，於上述態樣中，光罩保持於保持構件之保持點被約束於平面上(基板膜面之最小平方平面)。該態樣成為保持構件以單一平面保持光罩。但於因保持構件之形狀而使得保持點不處於單一平面之情形時，只要於獲得轉印面形狀資料C之步驟中，在設定強制位移量時反映保持構件之形狀即可。Further, in the above aspect, the holding point of the photomask held by the holding member is restrained on the plane (the smallest square plane of the substrate film surface). This aspect becomes the holding member holding the reticle in a single plane. However, in the case where the holding point is not in a single plane due to the shape of the holding member, it is only necessary to reflect the shape of the holding member when the forced displacement amount is set in the step of obtaining the transfer surface shape data C.
又，只要不妨礙本發明之作用效果，則亦可變更步驟之順序。Further, the order of the steps may be changed as long as the effects of the present invention are not impaired.
藉由上述態樣之描繪方法而對空白光罩描繪經修正之圖案資料後，藉由圖案化之製程而製造光罩。After the corrected pattern data is drawn to the blank mask by the above-described drawing method, the mask is manufactured by the patterning process.
已進行描繪之空白光罩(光罩中間體)係經由以下步驟而變為光罩。The blank mask (mask intermediate) that has been drawn is changed into a mask by the following procedure.
關於圖案化之製程，可使用公知之方法。即，已實施描繪之抗蝕膜藉由公知之顯影液而顯影，從而形成抗蝕圖案。可將該抗蝕圖案作為蝕刻遮罩對薄膜進行蝕刻。Regarding the process of patterning, a known method can be used. That is, the resist film which has been described is developed by a known developing solution to form a resist pattern. The resist pattern can be etched as an etch mask.
蝕刻方法可使用公知之方法。既可使用乾式蝕刻，亦可使用濕式蝕刻。由於本發明作為顯示裝置用光罩之製造方法尤為有用，故於應用濕式蝕刻之情形時，可顯著地獲得本發明之效果。A known method can be used for the etching method. Dry etching or wet etching can be used. Since the present invention is particularly useful as a method of manufacturing a photomask for a display device, the effect of the present invention can be remarkably obtained when wet etching is applied.
再者，關於上述中所說明之本發明之描繪步驟，成為該描繪之對象者不僅可為空白光罩(未描繪轉印用圖案者)，亦可為具備複數層薄膜、且於其一部分形成有圖案之光罩中間體。Further, in the drawing step of the present invention described above, the person who is the subject of the drawing may be not only a blank mask (a pattern for which a transfer pattern is not drawn) but also a plurality of layers and formed in a part thereof. Patterned reticle intermediate.
對於具備複數層薄膜之空白光罩而言，用以進行各薄膜之圖案化之描繪步驟可應用上述中所說明之本發明之描繪步驟。於該情形時，於可製造重疊精度優異之高精度之光罩方面極為有利。For a blank mask having a plurality of layers of film, the step of depicting the patterning of each film can be applied to the drawing steps of the invention described above. In this case, it is extremely advantageous in that it is possible to manufacture a high-precision photomask having excellent overlap precision.
再者，本申請案包括關於可實施如上述之描繪方法之描繪裝置之發明。Furthermore, the present application includes inventions relating to a rendering device that can implement the method of depiction as described above.
即，該描繪裝置係用於對在基板之主表面上形成有薄膜及光阻膜之空白光罩描繪轉印用圖案之描繪裝置。描繪裝置包括以下機構。That is, the drawing device is a drawing device for drawing a transfer pattern on a blank mask in which a film and a photoresist film are formed on the main surface of the substrate. The rendering device includes the following mechanisms.
高度測定機構係可於以主表面為上側而將上述空白光罩載置於載置台上之狀態下，測定上述主表面之高度分佈而獲得描繪時高度分佈資料E之機構。The height measuring means is a mechanism for obtaining the height distribution data E at the time of drawing when the blank surface is placed on the mounting table with the main surface as the upper side, and the height distribution of the main surface is measured.
輸入機構係可輸入上述轉印用圖案之圖案設計資料A、表示上述基板之主表面之形狀之基板表面形狀資料B、關於將上述基板保持於曝光裝置時之保持狀態之資訊、及包含上述基板材料之物性值之基板物性資訊之機構。The input mechanism is configured to input the pattern design data A of the transfer pattern, the substrate surface shape data B indicating the shape of the main surface of the substrate, the information on the holding state when the substrate is held in the exposure device, and the substrate The organization of substrate physical property information on the physical property value of materials.
運算機構係如下機構，其可使用上述基板表面形狀資料B、上述關於保持狀態之資訊及上述基板物性資訊而運算轉印面修正資料D，該轉印面修正資料D表示保持於曝光裝置內之狀態的上述基板之主表面形狀、即去除自重彎曲成分後之主表面形狀；且可求出上述描繪時高度分佈資料E與上述轉印面修正資料D之差量，並運算對應於所獲得之差量之上述主表面上之複數個點之描繪用座標偏移量資料G。The calculation mechanism is a mechanism that calculates the transfer surface correction data D by using the substrate surface shape data B, the information on the holding state, and the substrate physical property information, and the transfer surface correction data D indicates a state of being held in the exposure device. The main surface shape of the substrate, that is, the main surface shape after removing the self-weight bending component; and the difference between the height distribution data E at the drawing and the transfer surface correction data D can be obtained, and the difference corresponding to the obtained difference can be calculated. The plurality of points on the main surface are depicted by the coordinate offset data G.
作為運算機構，例如可使用個人電腦等公知之運算裝置。As the arithmetic means, for example, a known arithmetic device such as a personal computer can be used.
描繪機構係可使用上述描繪用座標偏移量資料G及上述圖案設計資料A而於上述空白光罩上進行描繪之機構。The drawing means can use the above-described drawing coordinate offset data G and the pattern design data A to draw on the blank mask.
再者，較佳為包括對上述輸入機構、運算機構及描繪機構進行控制之控制機構。Furthermore, it is preferable to include a control means for controlling the input means, the arithmetic means, and the drawing means.
此處，所謂關於保持狀態之資訊，較佳為包含例如保持構件之形狀、或者於將基板保持於曝光裝置內時基板接觸於保持構件之基板保持點之座標(根據座標之資訊可推算出保持點之強制位移量)。Here, the information about the holding state preferably includes, for example, the shape of the holding member or the coordinates of the substrate holding point where the substrate contacts the holding member when the substrate is held in the exposure device (the information can be estimated and held based on the coordinates of the coordinates) The amount of forced displacement of the point).
基板物性資訊例如可為基板之楊氏模數、泊松比及重量密度。The substrate property information may be, for example, a Young's modulus, a Poisson's ratio, and a weight density of the substrate.
藉由使用此種描繪裝置，可實施上述中所說明之光罩製造方法所需之描繪步驟。By using such a drawing device, the drawing steps required for the reticle manufacturing method described above can be carried out.
如以上所說明，根據本發明，可獲得能使形成於被加工體之圖案之座標精度極高之光罩。As described above, according to the present invention, it is possible to obtain a photomask which can make the coordinates of the pattern formed on the object to be processed extremely high.
此外，於在出貨前檢查此種光罩時，最理想為進行考慮載置於檢查裝置之狀態之光罩與保持於曝光裝置之狀態之光罩之差異的檢查。Further, in the case of inspecting such a mask before shipment, it is preferable to perform inspection for considering the difference between the mask placed in the state of the inspection device and the mask held in the state of the exposure device.
因此，發明者發現新檢查方法之必要性。Therefore, the inventors found the necessity of a new inspection method.
以膜面(圖案形成面)為上側，將已進行圖案形成之光罩載置於座標檢查裝置之載置台上，進行座標測定。將此處所獲得之資料作為圖案座標資料L。The film surface (pattern forming surface) was placed on the upper side, and the patterned photomask was placed on the mounting table of the coordinate inspection device to measure the coordinates. The information obtained here is taken as the pattern coordinate data L.
此處，所謂座標測定，較佳為藉由測定預先與轉印用圖案同時形成於光罩之主表面上之標記圖案之座標而進行。該標記圖案較佳為設置於主表面上、即轉印用圖案之區域外之複數個位置。Here, the coordinate measurement is preferably performed by measuring the coordinates of the mark pattern formed on the main surface of the reticle at the same time as the transfer pattern. The mark pattern is preferably provided at a plurality of positions on the main surface, that is, outside the area of the transfer pattern.
另一方面，獲得轉印面修正資料D，該轉印面修正資料D表示因將該光罩保持於曝光裝置中而引起之上述主表面之變形量、即除自重彎曲成分以外之上述主表面之變形量。其與上述II-1~II-3步驟相同。於為應用上述描繪方法而製造之本發明之光罩之情形時，可使用已獲得之轉印面修正資料D。On the other hand, the transfer surface correction data D is obtained, and the transfer surface correction data D indicates the deformation amount of the main surface caused by holding the photomask in the exposure device, that is, the deformation of the main surface other than the self-weight bending component. the amount. It is the same as the above steps II-1 to II-3. In the case of the photomask of the present invention manufactured by applying the above-described drawing method, the obtained transfer surface correction material D can be used.
於以膜面(圖案形成面)為上側而將上述光罩載置於檢查裝置之載置台上之狀態下，測定上述主表面之高度分佈，而獲得檢查時高度分佈資料I。The height distribution of the main surface was measured in a state in which the mask was placed on the mounting table of the inspection apparatus with the film surface (pattern forming surface) as the upper side, and the inspection height distribution data I was obtained.
該步驟中之高度測定與於上述III之「獲得描繪時高度分佈資料E之步驟」中進行之高度測定相同。又，於該步驟中，較佳為於與上述III步驟中之高度測定相同之測定點測定高度。The height measurement in this step is the same as the height measurement performed in the "Step of obtaining the height distribution data E at the time of drawing" in the above III. Moreover, in this step, preferably in the aboveThe height in the third step is determined by measuring the height of the same measuring point.
藉由求出檢查時高度分佈資料I與轉印面修正資料D之差量而獲得檢查差量資料J(參照圖11(a)~(c))。The difference amount data J is obtained by obtaining the difference between the height distribution data I at the time of inspection and the transfer surface correction data D (see FIGS. 11(a) to (c)).
推算出對應於檢查差量資料J的上述主表面上之複數個點之座標偏移量，而求出檢查用座標偏移量資料K(參照圖11(c)~(d))。此處，將高度之差量換算為座標偏移量之步驟可與上述V步驟同樣地進行。The coordinate offset amount corresponding to the plurality of points on the main surface of the inspection difference data J is calculated, and the coordinate value K for inspection is obtained (see FIGS. 11(c) to (d)). Here, the step of converting the difference in height to the coordinate shift amount can be performed in the same manner as the above-described V step.
繼而，使用所獲得之檢查用座標偏移量資料K及上述圖案座標資料L而進行上述轉印用圖案之檢查。Then, the inspection pattern for the transfer is performed using the obtained inspection coordinate offset data K and the pattern coordinate data L.
具體而言，轉印用圖案之檢查可使檢查用座標偏移量資料K反映於圖案設計資料A，並使用(比較)所獲得之修正設計資料M及圖案座標資料L而進行。Specifically, the inspection of the transfer pattern can be performed by reflecting the inspection coordinate offset amount K on the pattern design data A and using (comparing) the obtained corrected design data M and the pattern coordinate data L.
或者，上述轉印用圖案之檢查亦可使檢查用座標偏移量資料K反映於上述圖案座標資料L，並使用(比較)所獲得之修正座標資料N及上述圖案設計資料A而進行。Alternatively, the inspection of the transfer pattern may be performed by reflecting the inspection coordinate offset data K on the pattern coordinate data L and using (comparing) the obtained corrected coordinate data N and the pattern design data A.
較佳為藉由本發明之檢查方法對藉由本發明之製造方法而製造之光罩進行檢查。Preferably, the photomask manufactured by the manufacturing method of the present invention is inspected by the inspection method of the present invention.
再者，光罩之用途並無限制，且其構成亦無限制。Furthermore, the use of the photomask is not limited and its constitution is not limited.
可明確於所謂之二元遮罩、多階遮罩、相位偏移遮罩等具有任一膜構成之光罩中，亦可獲得本發明之作用效果。It can be understood that the effect of the present invention can also be obtained in a photomask having any film structure such as a so-called binary mask, a multi-step mask, and a phase shift mask.
再者，本發明包括關於可實施如上述之檢查方法之檢查裝置之發明。Furthermore, the present invention includes an invention relating to an inspection apparatus which can carry out the inspection method as described above.
即，一種檢查裝置，其係對在基板之主表面具有將薄膜圖案化而成之轉印用圖案之光罩進行檢查的光罩檢查裝置，且包括：座標測定機構，其進行形成於上述主表面之圖案之座標測定，而獲得圖案座標資料L；高度測定機構，其於以上述主表面為上側而將上述光罩載置於載置台上之狀態下，測定上述主表面之高度分佈，而獲得檢查時高度分佈資料I；輸入機構，其輸入表示上述基板之主表面之形狀之基板表面形狀資料B、關於將上述基板保持於曝光裝置時之保持狀態之資訊、及包含上述基板材料之物性值之基板物性資訊；運算機構，其使用上述基板表面形狀資料B、上述關於保持狀態之資訊及上述基板物性資訊，運算表示保持於曝光裝置內之狀態之上述基板之主表面形狀、即去除自重彎曲成分後之主表面形狀的轉印面修正資料D，並求出上述檢查時高度分佈資料I與上述轉印面修正資料D之差量，而運算對應於所獲得之差量的上述主表面上之複數個點之檢查用座標偏移量資料K；以及檢查機構，其使用上述檢查用座標偏移量資料K及上述圖案設計資料A而檢查上述光罩之轉印用圖案。That is, an inspection apparatus that has a pattern of a film formed on a main surface of a substratea mask inspection apparatus for inspecting a mask for a transfer pattern, comprising: a coordinate measuring mechanism that performs coordinate measurement of a pattern formed on the main surface to obtain pattern coordinate data L; and a height measuring mechanism The main surface is the upper side, and the photomask is placed on the mounting table, and the height distribution of the main surface is measured to obtain the height distribution data I during inspection; the input mechanism has an input indicating the shape of the main surface of the substrate. The substrate surface shape data B, the information on the state in which the substrate is held in the exposure apparatus, and the substrate property information including the physical property value of the substrate material, and the calculation mechanism using the substrate surface shape data B and the above-mentioned The state information and the substrate physical property information calculate the main surface shape of the substrate held in the exposure apparatus, that is, the transfer surface correction data D of the main surface shape after removing the self-weight bending component, and determine the height of the inspection. The difference between the distribution data I and the above-mentioned transfer surface correction data D, and the operation corresponds to the difference obtained An inspection coordinate offset data K of a plurality of points on the main surface; and an inspection mechanism for inspecting the transfer of the photomask using the inspection coordinate offset data K and the pattern design data A pattern.
上述關於將基板保持於曝光裝置時之保持狀態之資訊及上述包含基板材料之物性值之基板物性資訊如上所述。The information on the state in which the substrate is held in the exposure apparatus and the substrate property information including the physical property value of the substrate material are as described above.
所謂對表示保持於曝光裝置內之狀態之上述基板之主表面形狀、即去除自重彎曲成分後之主表面形狀的轉印面修正資料D進行運算，係指用以進行與上述II-1~II-3步驟同樣之步驟之運算。The calculation of the transfer surface correction data D indicating the main surface shape of the substrate held in the exposure apparatus, that is, the main surface shape after removing the self-weight bending component, is used to perform the above-mentioned II-1 to II- The operation of the same steps in 3 steps.
於使用上述檢查用座標偏移量資料K及上述圖案設計資料A而檢查上述光罩之轉印用圖案時，進行上述XI步驟所需之比較(用以若有需要則進行比較之運算)。When the transfer pattern for the photomask is inspected using the above-described inspection coordinate offset data K and the pattern design data A, the comparison required for the above XI step (for comparison if necessary) is performed.
本發明包括一種顯示裝置之製造方法，其包含：藉由對在主表面形成有轉印用圖案之光罩進行曝光，而對具有被加工層之設備基板進行圖案轉印；且使用藉由本發明之製造方法製成之光罩。The present invention includes a method of manufacturing a display device, comprising: patterning a device substrate having a processed layer by exposing a photomask having a transfer pattern formed on a main surface; and using the present invention A photomask made by the manufacturing method.
即，顯示裝置之製造方法使用藉由本發明之製造方法製成之光罩，且應用於製造該光罩時針對保持於曝光裝置內之狀態而決定條件的使用該曝光裝置進行曝光之圖案轉印方法。藉由圖案轉印而轉印至被加工體之圖案藉由被實施蝕刻等加工而變為顯示裝置。That is, the manufacturing method of the display device uses the photomask produced by the manufacturing method of the present invention, and is applied to pattern transfer using the exposure device to determine the condition for the state of being held in the exposure device when the photomask is manufactured. method. The pattern transferred to the object to be processed by pattern transfer is processed by etching or the like to become a display device.
此處，作為曝光裝置所具有之光學性能，於例如為如下者時，本發明之效果較為顯著。Here, the optical performance of the exposure apparatus is, for example, the following, and the effect of the present invention is remarkable.
用作LCD用(或FPD(Flat Panel Display，平板顯示器)用、液晶用)之等倍曝光之曝光裝置之構成為：光學系統之數值孔徑(NA)為0.08~1.0(尤其是0.085~0.095)，同調因子(σ)為0.7~0.9，曝光波長較佳為以i-光線、h-光線、g-光線中之任一者為代表波長之曝光之光，尤佳為i-光線、h-光線、g-光線均包含在內之寬波長光源。The exposure apparatus used for the equal exposure of the LCD (or FPD (Flat Panel Display), liquid crystal) is configured such that the numerical aperture (NA) of the optical system is 0.08 to 1.0 (especially 0.085 to 0.095). The coherence factor (σ) is 0.7 to 0.9, and the exposure wavelength is preferably an exposure light having a wavelength represented by any one of i-ray, h-ray, and g-ray, and particularly preferably i-ray, h- Wide-wavelength light source with light and g-light included.
所謂被加工層，係指於轉印光罩所具有之轉印用圖案後，經過蝕刻等製程而成為所期望之電子設備之構成物的各層。例如，於形成用以驅動液晶顯示裝置或有機EL顯示裝置之TFT(Thin Film Transistor，薄膜電晶體)電路之情形時，可例示像素層、源極/汲極層等。The layer to be processed refers to each layer which is a constituent of a desired electronic device after being subjected to a transfer pattern by the transfer mask and then subjected to a process such as etching. For example, in the case of forming a TFT (Thin Film Transistor) circuit for driving a liquid crystal display device or an organic EL display device, a pixel layer, a source/drain layer, and the like can be exemplified.
所謂設備基板，係指成為所要獲得之電子設備之構成物之具有電路之基板，例如液晶面板基板、有機EL面板基板等。The device substrate refers to a circuit-attached substrate that is a constituent of the electronic device to be obtained, such as a liquid crystal panel substrate, an organic EL panel substrate, or the like.
進而，本發明係一種顯示裝置之製造方法，其包含：使用上述曝光裝置及於各者之主表面上形成有轉印用圖案之複數個光罩，對形成於設備基板上之複數個被加工層依序進行圖案轉印；且包含使用藉由本發明之製造方法而製造之光罩之情形。Furthermore, the present invention provides a method of manufacturing a display device comprising: using the exposure device described above and a plurality of masks on which a transfer pattern is formed on a main surface of each of the plurality of masksThe plurality of processed layers formed on the device substrate are sequentially subjected to pattern transfer; and the case where the photomask manufactured by the manufacturing method of the present invention is used is included.
關於應用本發明而製造之顯示裝置，構成其之各層之重疊(覆蓋)精度極高。因此，顯示裝置製造之良率較高，且製造效率較高。With respect to the display device manufactured by applying the present invention, the overlap (coverage) of each of the layers constituting the same is extremely high. Therefore, the display device has a high yield and a high manufacturing efficiency.
使用圖12所示之模式圖，對藉由本發明之光罩之製造方法(描繪步驟)而獲得的發明之效果進行說明。The effect of the invention obtained by the manufacturing method (drawing step) of the reticle of the present invention will be described using a schematic diagram shown in FIG.
此處，表示藉由模擬而求出於對具有特定之基板表面形狀(基板表面形狀資料B)之基板(空白光罩)描繪轉印用圖案之情形時，設置於曝光裝置內時之轉印用圖案之座標精度變得如何(形成於被轉印體上之圖案之座標精度結果變得如何)的結果。Here, when the transfer pattern is drawn on the substrate (blank mask) having a specific substrate surface shape (substrate surface shape data B) by the simulation, the transfer is performed in the exposure apparatus. The result of how the accuracy of the coordinates of the pattern becomes (how the coordinate accuracy result of the pattern formed on the transferred body becomes).
首先，使用描繪裝置，對上述空白光罩描繪特定之測試圖案。此處所使用之測試用空白光罩係設為於具有800mm×920mm之尺寸之石英基板之主表面形成有遮光膜及正型光阻膜者。First, a specific test pattern is drawn to the blank mask using a drawing device. The test blank mask used here is a method in which a light-shielding film and a positive-type photoresist film are formed on the main surface of a quartz substrate having a size of 800 mm × 920 mm.
作為此處所使用之圖案設計資料，設為包含於X、Y方向上以50mm之間隔配置於主表面之大致整面之十字圖案之測試圖案。繼而，對該光阻進行顯影，並對遮光膜進行濕式蝕刻，藉此獲得具有遮光膜圖案之測試用光罩。將其設置於座標檢查裝置中並進行座標測定之結果為圖12(a)。The pattern design data used herein is a test pattern including a cross pattern of substantially the entire surface of the main surface at intervals of 50 mm in the X and Y directions. Then, the photoresist was developed, and the light-shielding film was wet-etched, whereby a test mask having a light-shielding film pattern was obtained. The result of setting this in the coordinate inspection apparatus and performing coordinate measurement is shown in Fig. 12 (a).
再者，此處，因描繪裝置之載置台平坦度及座標檢查裝置之載置台平坦度所引起之座標偏移因素已藉由預先測定兩裝置之載置台平坦度而自圖12(a)之資料中去除。Furthermore, here, the coordinate offset factor caused by the flatness of the mounting table of the drawing device and the flatness of the mounting table of the coordinate inspection device has been determined from the flatness of the mounting table of the two devices in advance from FIG. 12(a). Removed from the data.
其次，對將該測試用光罩設置於曝光裝置(等倍投影曝光方式)中之狀態下之座標偏移進行模擬。此處，使用曝光機之遮罩保持構件之形狀資訊及基板物性資訊，並使用有限元法推算出上述測試圖案中所產生之座標偏移(除自重彎曲成分以外)，而獲得圖12(b)之資料(比較例)。Next, the coordinate offset in the state in which the test reticle was set in the exposure apparatus (equal projection exposure mode) was simulated. Here, the shape information of the mask holding member of the exposure machine and the substrate property information are used, and the coordinate deviation (except the self-weight bending component) generated in the test pattern is calculated by the finite element method, and FIG. 12 (b) is obtained. ) information (comparison)example).
另一方面，於對上述空白光罩描繪同樣之測試圖案時，對描繪機之座標系統實施修正而描繪圖案設計資料。於座標系統之修正時，藉由上述II-1~V步驟求出描繪用座標偏移量資料而進行。將由該結果獲得之測試用光罩設置於座標檢查裝置中而進行座標測定，將測定結果示於圖12(c)。On the other hand, when the same test pattern is drawn on the blank mask, the coordinate system of the drawing machine is corrected to draw the pattern design data. In the correction of the coordinate system, the coordinate value data for drawing is obtained by the above steps II-1 to V. The test reticle obtained by the result was placed in a coordinate inspection apparatus to perform coordinate measurement, and the measurement result is shown in FIG. 12(c).
其次，與上述同樣地對將由該結果獲得之測試用光罩設置於曝光裝置中之狀態下之座標偏移進行模擬。將模擬之結果示於圖12(d)(實施例)。Next, in the same manner as described above, the coordinate shift in the state in which the test reticle obtained by the result was set in the exposure apparatus was simulated. The results of the simulation are shown in Fig. 12 (d) (Example).
根據圖12(d)可知，可於被轉印體上獲得與圖12(b)相比更接近於圖案設計資料之轉印圖像。於藉由本發明之方法製造之光罩中，座標精度較高，可將座標誤差值抑制於未達0.15μm。即，可設為大致消除因描繪裝置之能力所引起之座標偏移以外之誤差成分之精度。According to FIG. 12(d), a transfer image closer to the pattern design material than that of FIG. 12(b) can be obtained on the object to be transferred. In the photomask manufactured by the method of the present invention, the coordinate accuracy is high, and the coordinate error value can be suppressed to less than 0.15 μm. That is, it is possible to substantially eliminate the accuracy of the error component other than the coordinate offset caused by the ability of the drawing device.
| Application Number | Priority Date | Filing Date | Title |
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| JP2013170261 | 2013-08-20 |
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| TW201514615A TW201514615A (en) | 2015-04-16 |
| TWI547754Btrue TWI547754B (en) | 2016-09-01 |
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| CN (2) | CN104423140B (en) |
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