本申請是原申請案號94100817，申請日2005年01月12日，發明名稱為“偏光變換元件、光學照明裝置、曝光裝置以及曝光方法”的分案申請。This application is a divisional application of the original application No. 94108017, the application date is January 12, 2005, and the invention name is "polarizing conversion element, optical illumination device, exposure device, and exposure method".
本發明是有關於偏光變換元件、光學照明裝置、曝光裝置、以及曝光方法，且特別是有關於一種曝光裝置，用於製成半導體元件、影像攝取元件、液晶顯示元件、薄膜磁性頭等微元件的微影製程中。The present invention relates to a polarization conversion element, an optical illumination device, an exposure apparatus, and an exposure method, and more particularly to an exposure apparatus for fabricating a semiconductor element, an image pickup element, a liquid crystal display element, a thin film magnetic head, and the like. In the lithography process.
關於一些典型的曝光裝置，從光源射出的光束穿過做為光學積分器(optical integrator)的複眼(fly eye)透鏡，以形成由多個光源所構成的實質面光源的二次光源。由二次光源(一般是光學照明裝置的照明瞳或是被形成於其附近的照明瞳分佈)射出的光束，穿過被配置於複眼透鏡的後側焦點面附近的光圈而被限制後，入射於集光透鏡。With respect to some typical exposure devices, a beam of light emerging from a source passes through a fly eye lens that acts as an optical integrator to form a secondary source of substantially planar light sources comprised of a plurality of sources. A light beam emitted from a secondary light source (generally an illumination 瞳 of an optical illumination device or an illumination 瞳 distributed in the vicinity thereof) is restricted by passing through an aperture disposed near a rear focal plane of the fly-eye lens, and then incident. In the collecting lens.
利用集光透鏡而被集光的光束，與被形成有所定圖案的罩幕重疊地照明。穿過罩幕的圖案的光，穿過投影光學系統成像於晶圓上。接著，在晶圓上，罩幕圖案被投影曝光(轉印)。又，被形成於罩幕的圖案，在被高積集化時，對於此微細圖案要正確地被轉印到晶圓上，在晶圓上要得到均一照度分佈是不可缺少的。The light beam collected by the collecting lens is illuminated by overlapping with the mask formed with a predetermined pattern. Light passing through the pattern of the mask is imaged onto the wafer through the projection optical system. Next, on the wafer, the mask pattern is projected (transferred). Further, when the pattern formed on the mask is highly accumulated, the fine pattern is accurately transferred onto the wafer, and it is indispensable to obtain a uniform illuminance distribution on the wafer.
例如在發明人的日本專利第3246615號公開資料，揭示為了實現將任意方向的微細圖案以忠實地轉印的照明條件，在複眼透鏡的後側焦點面形成輪帶狀的二次光源，且設定使穿過此輪帶狀二次光源的光束，在周方向的偏光方向為直線偏光狀態(以下簡稱為「周方向偏光狀態」)。For example, Japanese Patent No. 3246615 of the inventor discloses a lighting strip for faithfully transferring a fine pattern in an arbitrary direction.A secondary light source in the form of a belt is formed on the rear focal plane of the fly-eye lens, and a light beam passing through the belt-shaped secondary light source is set, and the polarization direction in the circumferential direction is a linearly polarized state (hereinafter referred to as "weekly" Directional polarization state").
但是，上述公開資料的技術，利用穿過複眼透鏡所形成的圓形光束，限制穿過具有輪帶狀開口的光圈，以形成輪帶狀二次光源。此結果，對於傳統技術，會使光圈產生大量光損失，進而使曝光裝置的產能低下，因此不適合。However, the technique disclosed above utilizes a circular beam of light formed through a fly-eye lens to restrict passing through an aperture having a band-shaped opening to form a band-shaped secondary source. As a result, with the conventional technology, a large amount of light loss is generated in the aperture, which in turn makes the exposure apparatus low in productivity, and thus is not suitable.
有鑒於前述的問題，本發明提出一種偏光變換元件，可以將有約為單一方向的偏光方向的直線偏光狀態的入射光，變換成有約為周方向的偏光方向的周方向偏光狀態的光，且可以防止光量損失。In view of the above problems, the present invention provides a polarization conversion element capable of converting incident light in a linearly polarized state having a polarization direction of a single direction into a circumferentially polarized state having a polarization direction of a circumferential direction. And can prevent the loss of light amount.
又，本發明的目的是提供光學照明裝置，使用偏光變換元件，可以將有約為單一方向的偏光方向的直線偏光狀態的入射光，變換成有約為周方向的偏光方向的周方向偏光狀態的光，可以良好防止光量損失，形成周方向偏光狀態的輪帶狀照明瞳分佈。Further, an object of the present invention is to provide an optical illumination device capable of converting incident light in a linearly polarized state having a polarization direction of a single direction into a circumferentially polarized state having a polarization direction of a circumferential direction by using a polarization conversion element. The light can well prevent the loss of light quantity and form a distribution of the belt-shaped illumination 周 in the circumferentially polarized state.
又，本發明提供曝光裝置與曝光方法，使用光學照明裝置可以良好防止光量損失，形成周方向偏光狀態的輪帶狀照明瞳分佈，用適當的照明條件，可以將微細圖案忠實地且高產能轉印。Further, the present invention provides an exposure apparatus and an exposure method, which can prevent a loss of light amount by using an optical illumination device, and form a belt-shaped illumination 瞳 distribution in a circumferentially polarized state, and can appropriately and finely rotate a fine pattern with appropriate illumination conditions. Printed.
為了解決前述問題，本發明的第一實施例提供一種偏光變換元件，變換入射光的偏光狀態成為所定的偏光狀態，利用有旋光性的光學材料，以形成在周方向有厚度變化分佈。In order to solve the above problems, a first embodiment of the present invention provides a polarization conversion element that converts a polarization state of incident light into a predetermined polarization state, and uses an optical material having optical rotation to form a thickness in a circumferential direction.Distribution.
於第一較佳實施例，該厚度分佈，被設定使將有約單一方向的偏光方向的直線偏光狀態的光，變換成有約為周方向的偏光方向的周方向偏光狀態的光。又，周方向被分割成有多個區域，且這些區域中的任意2相鄰區域的厚度較佳為不同。於此情形，這些區域中的任意2相對區域，較佳有大約相等的旋光角度。In the first preferred embodiment, the thickness distribution is set such that light having a linearly polarized state in a direction of polarization in a single direction is converted into light in a circumferentially polarized state having a polarization direction in the circumferential direction. Further, the circumferential direction is divided into a plurality of regions, and the thickness of any two adjacent regions among these regions is preferably different. In this case, any two of these regions are preferably approximately equal in optical rotation angle.
又，於此情形，前述任意2相對區域，較佳相互約有相等厚度。又，該些多個區域之每一個，較佳都有約扇形狀。又，周方向較佳有連續的厚度變化。又，於第一實施例，較佳更有不具實質旋光性的中央區域。Further, in this case, the arbitrary two opposing regions preferably have an equal thickness to each other. Moreover, each of the plurality of regions preferably has an approximately fan shape. Further, it is preferable that the circumferential direction has a continuous thickness change. Further, in the first embodiment, it is preferable to have a central region which does not have substantially optical rotation.
根據本發明第二實施例，提供一光學照明裝置，包括提供照明光的光源，以及該光源與被照射面之間的光路被配置第一實施例的偏光變換元件。According to a second embodiment of the present invention, there is provided an optical illumination device comprising a light source for providing illumination light, and an optical path between the light source and the illuminated surface being configured with the polarization conversion element of the first embodiment.
根據第二較佳實施例，前述偏光變換元件，被配置於前述光學照明裝置的瞳或其附近。又，較佳更包括一相位部件，被配置於該光源與該偏光變換元件之間的光路中，使對應入射約直線偏光狀態的光的偏光方向而變化。於此情形，前述相位部件，較佳有1/2波長板，可以在做為前述光學照明裝置的光軸中心的結晶光學軸上，自由旋轉。According to the second preferred embodiment, the polarization conversion element is disposed in the vicinity of the pupil of the optical illumination device. Further, it is preferable to further include a phase member that is disposed in an optical path between the light source and the polarization conversion element to change in a polarization direction of light incident on a linearly polarized state. In this case, the phase member preferably has a 1/2 wavelength plate and is free to rotate on the crystal optical axis which is the center of the optical axis of the optical illumination device.
又，根據第二較佳實施例，較佳更包括第2相位部件，被配置於該光源與該相位部件之間的光路中，使入射的橢圓偏光狀態的光，變換成約直線偏光狀態的光。於此情形，前述第2相位部件，較佳有1/4波長板，可以在做為前述光學照明裝置的光軸中心的結晶光學軸上，自由旋轉。又，於第二較佳實施例，前述中央區域的徑向方向的大小，較佳為前述偏光變換元件的有效區域的徑方向大小的大於或等於1/3。Further, according to the second preferred embodiment, preferably, the second phase member is disposed in the optical path between the light source and the phase member, and converts the incident elliptically polarized light into a linearly polarized light. . In this case, the second phase member is preferably a quarter-wave plate, which can be used as the aforementionedThe optical axis of the optical illumination device is free to rotate on the crystal optical axis. Further, in the second preferred embodiment, the radial direction of the central region is preferably greater than or equal to 1/3 of the radial direction of the effective region of the polarization conversion element.
於本發明第三實施例，提供光學照明裝置，對於根據由光源供給的照明光，照明於被照射面的光學照明裝置。In a third embodiment of the present invention, an optical illumination device is provided for illuminating an illuminated illumination device on an illuminated surface based on illumination light supplied by a light source.
前述光學照明裝置的照明瞳面或與該照明瞳面共軛的面內被形成的光強度分佈，關於在其所定的有效光源區域的第1方向偏光的平均特定偏光率以RSPh(Ave)表示，關於第2方向偏光的平均特定偏光率以RSPv(Ave)表示，滿足RSPh(Ave)>70%，RSPv(Ave)>70%。The light intensity distribution formed by the illumination pupil surface of the optical illumination device or the in-plane conjugate with the illumination pupil plane, and the average specific polarization ratio of the first direction polarization of the effective light source region determined by the RSPh (Ave) It is shown that the average specific polarization ratio with respect to the polarization in the second direction is expressed by RSPv (Ave), and RSPh (Ave) > 70% and RSPv (Ave) > 70% are satisfied.
又，RSPh(Ave)=Ix(Ave)/(Ix+Iy)Ave；RSPv(Ave)=Iy(Ave)/(Ix+Iy)Ave。Further, RSPh (Ave) = Ix (Ave) / (Ix + Iy) Ave; RSPv (Ave) = Iy (Ave) / (Ix + Iy) Ave.
於此，Ix(Ave)為通過所定的有效光源區域到達像面的一點的光束，在第1方向偏光成分的強度平均。Iy(Ave)為通過所定的有效光源區域到達像面的一點的光束，在第2方向偏光成分的強度平均。(Ix+Iy)Ave為通過所定的有效光源區域的全部光束強度的強度平均。又，前述光學照明裝置的照明瞳面，定義成對應前述被照射面之光學傅立葉轉換關係的面，在前述光學照明裝置與投影光學系統組合的情形，可以定義出與投影光學系統的光圈光學共軛的光學照明裝置內的面。又，與前述光學照明裝置的照明瞳面共軛的面，不限定於前述光學照明裝置內的面，例如前述光學照明裝置與投影光學系統組合時，也可以投影光學系統內的面。更也可以是用以檢出光學照明裝置(或投影曝光裝置)的偏光狀態的偏光測定器內的面。Here, Ix(Ave) is a light beam that reaches a point of the image plane through the predetermined effective light source region, and the intensity of the polarization component in the first direction is averaged. Iy(Ave) is a light beam that reaches a point of the image plane through the predetermined effective light source region, and the intensity of the polarization component in the second direction is averaged. (Ix + Iy) Ave is the intensity average of the total beam intensity through the determined effective source region. Further, the illumination pupil plane of the optical illumination device is defined as a surface corresponding to the optical Fourier transform relationship of the illuminated surface, and in the case where the optical illumination device is combined with the projection optical system, the aperture optical relationship with the projection optical system can be defined. The face inside the optical illumination device of the yoke. Moreover, the illumination of the optical illumination device described above瞳The surface conjugated surface is not limited to the surface in the optical illumination device. For example, when the optical illumination device is combined with the projection optical system, the surface in the optical system may be projected. Further, it may be a surface in the polarimeter for detecting the polarization state of the optical illumination device (or the projection exposure device).
本發明第四實施例，提供曝光裝置，包括第二實施例或第第三實施例的光學照明裝置，穿過該光學照明裝置將罩幕上的圖案曝光於感光性基板上。本發明第五實施例，提供曝光方法，使用第二實施例或第三實施例的光學照明裝置，將罩幕上的圖案曝光於感光性基板上。According to a fourth embodiment of the present invention, there is provided an exposure apparatus comprising the optical illumination apparatus of the second embodiment or the third embodiment, through which the pattern on the mask is exposed on the photosensitive substrate. According to a fifth embodiment of the present invention, there is provided an exposure method for exposing a pattern on a mask to a photosensitive substrate using the optical illumination device of the second embodiment or the third embodiment.
本發明的偏光變換元件，例如利用有如水晶旋光性的光學材料被形成，在周方向有變化厚度分佈。於此，厚度分佈，例如，被設定使約為單一方向的偏光方向的直線偏光狀態的光，變換成有約為周方向的偏光方向的周方向偏光狀態的光。其結果，於本發明，可以實現防止光量損失，將有約為單一方向的偏光方向的直線偏光狀態的入射光，變換成有約為周方向的偏光方向的周方向偏光狀態的光的偏光變換裝置。特別是，因為利用有旋光性的光學材料以形成偏光變換裝置，進而有波長板在相對上很容易製造的優點。The polarization conversion element of the present invention is formed, for example, by an optical material having a crystal optical rotation, and has a varying thickness distribution in the circumferential direction. In the thickness distribution, for example, light in a linearly polarized state in a polarization direction of a single direction is set to be converted into light in a circumferentially polarized state having a polarization direction in the circumferential direction. As a result, in the present invention, it is possible to prevent the loss of the amount of light, and to convert the incident light in a linearly polarized state having a polarization direction of a single direction into a polarization conversion of light having a circumferentially polarized state in a polarization direction of the circumferential direction. Device. In particular, since an optically active optical material is used to form a polarization conversion device, there is an advantage that the wavelength plate is relatively easy to manufacture.
另外，於本發明的光學照明裝置，因為使用偏光變換裝置，可以將約為單一方向的偏光方向的直線偏光狀態的入射光，變換成有約為周方向的偏光方向的周方向偏光狀態的光，可以良好防止光量損失，而形成周方向偏光狀態的輪帶狀照明瞳分佈。又，本發明的曝光裝置與曝光方法，使用光學照明裝置，可以良好防止光量損失，而形成周方向偏光狀態的輪帶狀照明瞳分佈，於適當的照明條件，可以忠實且高產能地轉印微細圖案，進而元件製造也有良好的產能。Further, in the optical illumination device of the present invention, by using a polarization conversion device, it is possible to convert incident light in a linearly polarized state in a polarization direction of a single direction into light in a circumferentially polarized state having a polarization direction in the circumferential direction. It is possible to prevent the loss of the amount of light well and form the distribution of the band-shaped illumination 瞳 in the circumferentially polarized state. Moreover, the exposure apparatus and the exposure method of the present invention,By using an optical illumination device, it is possible to prevent the loss of the amount of light, and to form a distribution of the belt-shaped illumination 周 in the circumferentially polarized state, and to transfer the fine pattern faithfully and with high productivity under appropriate illumination conditions, and to have a good productivity in component manufacture.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;
圖1繪示根據本發明實施例的曝光裝置示意圖。於圖1，分別設定沿著感光性基板即晶圓W的法線方向為Z軸，晶圓W的面內與圖1的紙面平行的方向為Y軸，晶圓W的面內與圖1的紙面垂直的方向為X軸。請參照圖1，本實施例的曝光裝置，包含用以供給曝光的光(照明光)的光源1。FIG. 1 is a schematic view of an exposure apparatus according to an embodiment of the invention. In FIG. 1, the normal direction of the wafer W along the photosensitive substrate is set to the Z axis, and the direction parallel to the paper surface of the wafer W in the plane of the wafer W is the Y axis, and the inside of the wafer W is in FIG. The vertical direction of the paper is the X axis. Referring to Fig. 1, the exposure apparatus of the present embodiment includes a light source 1 for supplying exposed light (illumination light).
做為光源1，例如可以使用供給248nm波長光的KrF準分子雷射光源或是供給193nm波長光的ArF準分子雷射光源。從光源1沿著Z方向射出的約平行光束，沿著X方向有細長延伸的矩形狀斷面，且入射於由一對透鏡2a與2b所構成的光束擴展器2(expander)。各別的透鏡2a與2b，在圖1的紙面內(YZ平面內)分別具有負屈折力與正屈折力。因此，入射於光束擴展器2的光束，在圖1的紙面內被放大，並被整形為有所定的矩形斷面的光束。As the light source 1, for example, a KrF excimer laser light source that supplies light of 248 nm wavelength or an ArF excimer laser light source that supplies light of 193 nm wavelength can be used. The approximately parallel light beam emitted from the light source 1 in the Z direction has an elongated rectangular cross section along the X direction and is incident on the beam expander 2 (expander) composed of the pair of lenses 2a and 2b. The respective lenses 2a and 2b have a negative refractive power and a positive refractive power in the paper surface (in the YZ plane) of Fig. 1, respectively. Therefore, the light beam incident on the beam expander 2 is enlarged in the plane of the paper of Fig. 1 and shaped into a beam having a rectangular cross section.
穿過做為整形光學系統的光束擴展器2之大約平行的光束，其由反射鏡3折曲偏向到Y方向後，穿過1/4波長板4a、1/2波長板4b、消偏振鏡(depolarizer)4c、以及輪帶照明用的繞射光學元件5，而入射於無焦點(afocal)透鏡6。於此，1/4波長板4a、1/2波長板4b以及消偏振鏡4c，如後述，構成偏光狀態變換部4。無焦點光學系統設定為：使無焦點透鏡6，其前側焦點位置與繞射光學元件5的位置大約一致，且後側焦點位置與如圖中虛線所示的所定面7的位置大約一致。Passing through an approximately parallel beam of the beam expander 2 as an shaping optical system, which is deflected by the mirror 3 to the Y direction and passes through the 1/4 wavelengthThe plate 4a, the 1/2 wavelength plate 4b, the depolarizer 4c, and the diffractive optical element 5 for belt illumination are incident on the afocal lens 6. Here, the quarter-wavelength plate 4a, the half-wavelength plate 4b, and the depolarizer 4c constitute a polarization state conversion unit 4 as will be described later. The non-focus optical system is set such that the focusless lens 6 has its front focus position approximately coincident with the position of the diffractive optical element 5, and the rear focus position approximately coincides with the position of the fixed surface 7 as indicated by the broken line in the figure.
一般，繞射光學元件，基板形成有高度差其間隔為曝光的光(照明光)波長程度，使入射光束在所要的角度有繞射作用。具體地，輪帶照明用的繞射光學元件5，在具有斷面為矩形狀的平行光束入射時，具有在遠場(far-field)(或是Fraunhofer繞射區域)形成輪帶狀光強度分佈的功能。Generally, the optical element is diffracted, and the substrate is formed with a height difference such that the interval is the wavelength of the exposed light (illumination light), so that the incident light beam has a diffraction effect at a desired angle. Specifically, the diffractive optical element 5 for belt illumination has a band-shaped light intensity in a far-field (or a Fraunhofer diffraction area) when incident on a parallel beam having a rectangular cross section. Distributed features.
因此，入射於做為光束變換元件的繞射光學元件5的約平行光束，在無焦點透鏡6的瞳面形成輪帶狀的光強度分佈後，約平行光束從無焦點透鏡6被射出。又，無焦點透鏡6的前透鏡群6a與後透鏡群6b之間的光路中的瞳面或其附近，被配置圓錐柱狀鏡(axicon)系統8，其詳細結構與作用描述於後。以下，為簡單說明，忽略圓錐柱狀鏡系統8，說明基本的結構與作用。Therefore, the approximately parallel light beam incident on the diffractive optical element 5 as the beam converting element forms a band-shaped light intensity distribution on the pupil surface of the non-focus lens 6, and the parallel beam is emitted from the non-focus lens 6. Further, the axicon system 8 is disposed on or near the pupil plane in the optical path between the front lens group 6a and the rear lens group 6b of the non-focus lens 6, and the detailed structure and operation thereof will be described later. Hereinafter, for the sake of simplicity, the conical cylindrical mirror system 8 will be omitted, and the basic structure and function will be described.
穿過無焦點透鏡6的光束，穿過可變σ值用的伸縮透鏡9(zoom lens)與偏光變換元件10，而入射於做為光學積分器(optical integrator)的微複眼透鏡(或是複眼透鏡)11。偏光變換元件10的結構與作用說明於後。微複眼透鏡11是由縱橫且密集配列的多個具有正屈折力的微小透鏡所構成的光學元件。一般而言，微複眼透鏡，例如是利用平行平面板施加蝕刻處理以形成微小透鏡群所製成。The light beam that has passed through the focusless lens 6 passes through a zoom lens for variable σ value and the polarization conversion element 10, and is incident on a micro-integrated eye lens (or compound eye) as an optical integrator Lens) 11. The structure and function of the polarization conversion element 10 will be described later. The micro fly's eye lens 11 is composed of a plurality of vertical and horizontal densely arranged micro-refractive forcesAn optical component formed by a lens. In general, a micro fly's eye lens is made, for example, by applying an etching treatment using a parallel plane plate to form a minute lens group.
接著，構成微複眼透鏡的各微小透鏡，比構成複眼透鏡的各透鏡單元(lens element)微小。又，微複眼透鏡，與由相互被隔絕的透鏡單元所構成的複眼透鏡不同，多個微小透鏡(微小屈折面)，不相互被隔絕而一體成形。然而，在具有正屈折力的透鏡單元被縱橫配置的觀點上，微複眼透鏡是與複眼透鏡相同之波面分割型的光學積分器。Next, each of the minute lenses constituting the micro-folding eye lens is smaller than each lens element constituting the fly-eye lens. Further, unlike the fly-eye lens composed of the lens units that are isolated from each other, the micro-folding eye lens is integrally formed without being isolated from each other. However, the micro fly-eye lens is the same wavefront-divided optical integrator as the fly-eye lens from the viewpoint of the longitudinal and lateral arrangement of the lens unit having the positive refractive power.
所定面7的位置被配置於伸縮透鏡9的前側焦點位置的附近，而微複眼透鏡11的入射面被配置於伸縮透鏡9的後側焦點位置的附近。換言之，伸縮透鏡9配置成所定面7與微複眼透鏡11的入射面實質上為傅立葉轉換關係，進而配置成無焦點透鏡6的瞳面與微複眼透鏡11入射面為大致光學共軛。The position of the fixed surface 7 is disposed in the vicinity of the front focus position of the telescopic lens 9, and the incident surface of the micro fly's eye lens 11 is disposed in the vicinity of the rear focus position of the telescopic lens 9. In other words, the telescopic lens 9 is disposed such that the fixed surface 7 and the incident surface of the micro fly's eye lens 11 are substantially in a Fourier-transformed relationship, and further, the pupil surface of the non-focus lens 6 is substantially optically conjugate with the incident surface of the micro fly's eye lens 11.
接著，微複眼透鏡11的入射面上，與無焦點透鏡6的瞳面相同，例如被形成以光軸AX做為中心的輪帶狀照射範圍。此輪帶狀照射範圍的全體形狀是與伸縮透鏡9的焦點距離依存而相似地變化。構成微複眼透鏡11的各微小透鏡具有矩形狀的斷面，其與在罩幕M上要形成照射範圍的形狀(進而在晶圓W上要形成曝光區域的形狀)相似。Next, the incident surface of the micro fly's eye lens 11 is the same as the pupil surface of the non-focus lens 6, and is formed, for example, in a belt-shaped irradiation range centered on the optical axis AX. The overall shape of the belt-shaped irradiation range changes similarly to the focal length of the telescopic lens 9. Each of the minute lenses constituting the micro-overlook lens 11 has a rectangular cross section similar to the shape in which the irradiation range is to be formed on the mask M (and thus the shape of the exposed region on the wafer W).
入射微複眼透鏡11的光束是利用多個微小透鏡而被二維分割，其後側焦點面或是其附近(進而照明瞳)，藉由入射光束，有與被形成的照射範圍大約相同光強度分佈的二次光源，即是以光軸AX做為中心的輪帶狀的實質面光源所構成的二次光源被形成。從微複眼透鏡11的後側焦點面或是其附近被形成的二次光源的光束，穿過分光器12a(beam splitter)及集光系統13後，與罩幕遮板(mask blind)重疊地照明。The light beam incident on the micro fly's eye lens 11 is two-dimensionally divided by a plurality of minute lenses, and the rear side focal plane or its vicinity (and thus the illumination 瞳) has an approximately the same light intensity as the formed illumination range by the incident light beam. The distributed secondary light source, that is, the strip-shaped substantial surface light centered on the optical axis AXA secondary light source composed of a source is formed. The light beam of the secondary light source formed from the rear focal plane of the micro-overlocular lens 11 or its vicinity passes through the beam splitter 12a and the light collecting system 13 and overlaps with the mask blind illumination.
接著，作為照明視野光圈的罩幕遮板14，形成了矩形狀的照射範圍，其對應構成微複眼透鏡11之各個微小透鏡的形狀與焦點距離。再者，內部設置有分光器12a的偏光監視器12，其內部結構與作用如後所述。穿過罩幕遮板14的矩形狀開口部(透光部)的光束，在受到成像光學系統15的集光作用後，重疊地照射在形成有所定圖案的罩幕M上。Next, as a mask shutter 14 for illuminating the field of view aperture, a rectangular irradiation range is formed which corresponds to the shape and focal length of each of the microlenses constituting the micro fly's eye lens 11. Further, a polarization monitor 12 having a spectroscope 12a disposed therein is provided, the internal structure and function of which will be described later. The light beam that has passed through the rectangular opening portion (light transmitting portion) of the mask shutter 14 is superimposed on the mask M forming a predetermined pattern after being subjected to the light collecting action of the imaging optical system 15.
即是，成像光學系統15，使罩幕遮板14的矩形狀開口部的像被形成於罩幕M上。穿過罩幕M的圖案的光束，又穿過投影光學系統PL，將罩幕圖案的像形成於感光性基板即晶圓W上。接著，在與投影光學系統PL的光軸AX垂直的平面(XY面)內，利用二維地驅動控制晶圓W進行全部或掃描曝光，罩幕M的圖案依序被曝光於晶圓W的各曝光區域。That is, the imaging optical system 15 forms an image of the rectangular opening portion of the mask shutter 14 on the mask M. The light beam that has passed through the pattern of the mask M passes through the projection optical system PL, and the image of the mask pattern is formed on the wafer W which is a photosensitive substrate. Next, in a plane (XY plane) perpendicular to the optical axis AX of the projection optical system PL, all or scanning exposure is performed by two-dimensionally driving the control wafer W, and the pattern of the mask M is sequentially exposed to the wafer W. Each exposure area.
又，在偏光狀態切換部4中，1/4波長板4a被構成可以自由旋轉於以光軸AX做為中心的結晶光學軸，將入射的橢圓偏光光束變換成直線偏光光束。又，1/2波長板4b被構成可以自由旋轉於以光軸AX做為中心的結晶光學軸，使入射的直線偏光的偏光面變化。又，消偏振鏡4c利用有互補形狀的楔形狀水晶稜鏡與楔形狀石英稜鏡而被構成。水晶稜鏡與石英稜鏡做為一體的稜鏡組合體，被構成對照明光路可以自由插脫。Further, in the polarization state switching unit 4, the quarter-wavelength plate 4a is configured to be rotatable about a crystal optical axis centering on the optical axis AX, and converts the incident elliptically polarized light beam into a linearly polarized light beam. Further, the half-wavelength plate 4b is configured to be rotatable about a crystal optical axis centering on the optical axis AX, and to change the polarization plane of the incident linearly polarized light. Further, the depolarizer 4c is formed by using a wedge-shaped crystal crucible having a complementary shape and a wedge-shaped quartz crucible.Composition. The combination of crystal enamel and quartz enamel is integrated into the illuminating light path.
使用KrF準分子雷射光源或是ArF準分子雷射光源做為光源1的情形下，從這些光源被射出的光，一般有95%以上的偏光度，且約直線偏光的光入射於1/4波長板4a。但是，光源1與偏光狀態切換部4之間的光路中，有做為背面反射鏡的直角稜鏡的情形時，入射的直線偏光的偏光面不與P偏光面或S偏光面一致，利用直角稜鏡的全反射使直線偏光變為橢圓偏光。When a KrF excimer laser light source or an ArF excimer laser light source is used as the light source 1, the light emitted from these light sources generally has a degree of polarization of more than 95%, and about linearly polarized light is incident on 1/1. 4 wave plate 4a. However, when there is a right angle 做 of the back surface mirror in the optical path between the light source 1 and the polarization state switching unit 4, the polarized surface of the incident linearly polarized light does not coincide with the P polarized surface or the S polarized surface, and a right angle is used. The total reflection of 稜鏡 causes the linearly polarized light to become elliptically polarized.
偏光狀態切換部4，雖然例如是由於直角稜鏡的全反射造成的橢圓偏光光束入射，利用1/4波長板4a的作用被被變換成直線偏光光束，入射於1/2波長板4b。1/2波長板4b的結晶光學軸，對應入射的成直線偏光的偏光面設定成0度或90度時，入射於1/2波長板4b的直線偏光的光束，其偏光面不會變化而通過。The elliptically polarized light beam is incident on the 1/2 wavelength plate 4b by the action of the quarter wave plate 4a, for example, by the elliptically polarized light beam incident by the total reflection of the right angle 稜鏡. When the crystal optical axis of the half-wavelength plate 4b is set to 0 or 90 degrees in accordance with the incident polarized surface of the linearly polarized light, the linearly polarized light beam incident on the half-wavelength plate 4b does not change its polarizing surface. by.
又，1/2波長板4b的結晶光學軸，對應入射的直線偏光的偏光面，以45度設定的情形，入射於1/2波長板4b的直線偏光光束的偏光面，僅以90度變化被變換成直線偏光的光。再者，消偏振鏡4c的水晶稜鏡的結晶光學軸，對應入射的直線偏光的偏光面被設定成45度的情形，入射水晶稜鏡的直線偏光的光被變換成非偏光狀態的光(非偏光化)。Further, the crystal optical axis of the half-wavelength plate 4b is set at 45 degrees in accordance with the polarization plane of the incident linearly polarized light, and the polarization plane of the linearly polarized light beam incident on the half-wavelength plate 4b changes only by 90 degrees. Light that is converted into linearly polarized light. Further, in the crystal optical axis of the crystal crucible of the depolarizer 4c, the polarized surface corresponding to the incident linearly polarized light is set to 45 degrees, and the linearly polarized light incident on the crystal crucible is converted into the non-polarized light ( Non-polarization).
於偏光狀態切換部4，當消偏振鏡4c在照明光路中定位，使水晶稜鏡的結晶光學軸相對入射的直線偏光的偏光面為45度。另外，水晶稜鏡的結晶光學軸相對入射的直線偏光的偏光面，設定為0度或90度的角度時，入射水晶稜鏡的直線偏光的偏光面不會變化而通過。又，1/2波長板4b的結晶光學軸相對入射的直線偏光的偏光面，設定為22.5度的角度時，入射1/2波長板4b的直線偏光的光，被變換成含有偏光面不會變化而通過直線偏光成分和偏光面僅90度變化的直線偏光成分的非偏光狀態的光。In the polarization state switching portion 4, when the depolarizer 4c is positioned in the illumination light path, the crystal optical axis of the crystal crucible is polarized with respect to the incident linear polarization.The face is 45 degrees. Further, when the crystal optical axis of the crystal crucible is set to an angle of 0 or 90 degrees with respect to the incident polarized surface of the linearly polarized light, the polarized surface of the linearly polarized light incident on the crystal crucible does not change and passes. Further, when the crystal optical axis of the half-wavelength plate 4b is set at an angle of 22.5 degrees with respect to the incident polarized surface of the linearly polarized light, the linearly polarized light incident on the half-wavelength plate 4b is converted into a polarized surface. Light that is changed in a non-polarized state by a linearly polarized component whose linearly polarized component and a polarizing surface change by only 90 degrees.
對於偏光狀態切換部4，如上述，直線偏光的光入射於1/2波長板4b，是為了以下的簡單說明，在圖1的Z方向具有偏光方向(電場方向)的直線偏光(以下稱Z方向偏光)的光，其入射於1/2波長板4b。消偏振鏡4c在照明光路中定位時，入射於1/2波長板4b的結晶光學軸相對Z方向偏光的偏光面(偏光方向)設定為0度或90度，且入射於1/2波長板4b的Z方向偏光，其偏光面不會變化的Z方向偏光通過，而入射於消偏振鏡4c的水晶稜鏡。水晶稜鏡的結晶光學軸，相對入射的Z方向偏光的偏光面，因為設定為45度的角度，入射水晶稜鏡Z方向偏光的光被變換成非偏光狀態的光。In the polarization state switching unit 4, as described above, the linearly polarized light is incident on the half-wavelength plate 4b, and is a linearly polarized light having a polarization direction (electric field direction) in the Z direction of FIG. 1 for the following brief description (hereinafter referred to as Z). The light of the direction polarization is incident on the 1/2 wavelength plate 4b. When the depolarizer 4c is positioned in the illumination optical path, the crystal optical axis incident on the half-wavelength plate 4b is set to 0 or 90 degrees with respect to the polarization plane (polarization direction) of the Z-direction polarization, and is incident on the 1/2 wavelength plate. In the Z-direction polarized light of 4b, the Z-direction polarized light whose polarizing surface does not change passes, and is incident on the crystal crucible of the depolarizer 4c. The crystal optical axis of the crystal crucible is converted to a non-polarized state by the incident crystal 稜鏡 Z-polarized light by setting the angle of 45 degrees with respect to the incident polarization plane of the incident Z direction.
穿過水晶稜鏡被非偏光化的光，穿過為了補償光行進方向而作為補償器(compensator)的石英稜鏡，以非偏光狀態入射於繞射光學元件5。一方面，入射於1/2波長板4b的結晶光學軸相對Z方向偏光的偏光面設定為45度時，入射於1/2波長板4b的Z方向偏光的光，其偏光面僅90度變化，如在圖1的X方向具有偏光方向(電場方向)的直線偏光(以下稱X方向偏光)的光，入射於消偏振鏡4c的水晶稜鏡。相對入射於水晶稜鏡的結晶光學軸的X方向偏光的偏光面，因為設定為45度，入射水晶稜鏡的X方向偏光的光，被變換成非偏光狀態，且穿過石英稜鏡，並以非偏光狀態入射於繞射光學元件5。The light that has been non-polarized through the crystal crucible passes through a quartz crucible as a compensator for compensating the direction of travel of the light, and is incident on the diffractive optical element 5 in a non-polarized state. On the other hand, when the crystal optical axis incident on the half-wavelength plate 4b is set to 45 degrees with respect to the polarization direction of the Z-direction polarization, the Z-direction polarized light incident on the 1/2 wavelength plate 4b changes its polarization plane by only 90 degrees. , as in the X direction of FIG. 1 , having a polarization direction (electric field direction)The linearly polarized light (hereinafter referred to as X-direction polarized light) is incident on the crystal crucible of the depolarizer 4c. The polarized surface of the X-direction polarized light incident on the crystal optical axis of the crystal crucible is set to 45 degrees, and the light polarized in the X direction of the incident crystal crucible is converted into a non-polarized state and passes through the quartz crucible. It is incident on the diffractive optical element 5 in a non-polarized state.
反之，在消偏振鏡4c從照明光路退開時，入射於1/2波長板4b的結晶光學軸相對於Z方向偏光的偏光面設定為0度或90度時，入射於1/2波長板4b的Z方向偏光的光不會變化而通過，以Z方向偏光狀態入射於繞射光學元件5。另一方面，入射於1/2波長板4b的結晶光學軸相對於Z方向偏光的偏光面設定為45度時，入射於1/2波長板4b的Z方向偏光的光，偏光面會僅變化90度而變成X方向偏光的光，而以X方向偏光狀態入射於繞射光學元件5。On the other hand, when the depolarizer 4c is retracted from the illumination path, the crystal optical axis incident on the half-wavelength plate 4b is set to 0 or 90 degrees with respect to the polarization plane of the Z-direction polarization, and is incident on the 1/2 wavelength plate. The light of the Z-direction polarized light of 4b passes without changing, and is incident on the diffractive optical element 5 in a state of polarization in the Z direction. On the other hand, when the crystal optical axis incident on the half-wavelength plate 4b is set to 45 degrees with respect to the polarization direction of the Z-direction polarization, the polarized surface of the light that is incident on the 1/2 wavelength plate 4b in the Z direction will change only. Light that is polarized in the X direction at 90 degrees is incident on the diffractive optical element 5 in a state of polarization in the X direction.
如上述，對於偏光狀態切換部4，利用決定消偏振鏡4c插入照明光路的定位，可以使非偏光狀態的光入射於繞射光學元件5。又，使消偏振鏡4c從照明光路退開，且利用設定使1/2波長板4b的結晶光學軸相對於入射的Z方向偏光的偏光面為0度或90度，可以使Z方向偏光狀態的光入射於繞射光學元件5。再者，消偏振鏡4c從照明光路退開，且利用設定使1/2波長板4b的結晶光學軸相對於入射的Z方向偏光的偏光面為45度，可以使X方向偏光狀態的光入射於繞射光學元件5。As described above, the polarization state switching unit 4 can cause the light in the non-polarized state to enter the diffractive optical element 5 by determining the position at which the depolarizer 4c is inserted into the illumination light path. Further, the depolarizer 4c is retracted from the illumination path, and the Z-direction polarization state can be made by setting the polarization plane of the crystal optical axis of the 1⁄2 wavelength plate 4b to be polarized with respect to the incident Z direction to 0 or 90 degrees. The light is incident on the diffractive optical element 5. Further, the depolarizer 4c is retracted from the illumination optical path, and the polarizing surface for setting the crystal optical axis of the half-wavelength plate 4b to be polarized with respect to the incident Z-direction is set to 45 degrees, so that light of the X-direction polarized state can be incident. The optical element 5 is diffracted.
換言之，對於偏光狀態切換部4，利用由1/4波長板4a、1/2波長板4b與消偏振鏡4c所組成的偏光狀態切換部的作用，往繞射光學元件5的入射光的偏光狀態(進而照明罩幕M與晶圓W的光的偏光狀態)，可以在直線偏光狀態與非偏光狀態之間切換，於直線偏光狀態的情形，可以在相互垂直的偏光狀態之間(Z方向偏光狀態與X方向偏光狀態之間)切換。In other words, the polarization state switching unit 4 uses a polarization state switching unit composed of the quarter wave plate 4a, the 1⁄2 wavelength plate 4b, and the depolarizer 4c.The polarizing state of the incident light to the diffractive optical element 5 (and thus the polarization state of the light of the mask M and the wafer W) can be switched between a linearly polarized state and a non-polarized state, in a linearly polarized state. In other cases, it is possible to switch between mutually polarized states (between the Z-direction polarization state and the X-direction polarization state).
再者，對於偏光狀態切換部4，使1/2波長板4b與消偏振鏡4c一起從照明光路退開，且利用1/4波長板4a的結晶光學軸相對於入射的橢圓偏光設定所要的角度，圓偏光的光可以入射於繞射光學元件5。又一般上，利用1/2波長板4b的作用，往繞射光學元件5的入射光的偏光狀態，可以設定成在任意方向有偏光方向的直線偏光狀態。Further, in the polarization state switching unit 4, the 1⁄2 wavelength plate 4b is retracted from the illumination optical path together with the depolarizer 4c, and the crystal optical axis of the 1⁄4 wavelength plate 4a is set with respect to the incident elliptically polarized light. At an angle, circularly polarized light may be incident on the diffractive optical element 5. In general, the polarization state of the incident light to the diffractive optical element 5 by the action of the half-wavelength plate 4b can be set to a linearly polarized state having a polarization direction in an arbitrary direction.
次之，圓錐柱狀鏡系統8，順著光源側，由對向光源側為平面且對向罩幕側為凹圓錐狀的屈折面的第1稜鏡部8a，與對向罩幕側為平面且對向光源側為凸圓錐狀的屈折面的第2稜鏡部8b所構成。第1稜鏡部8a的凹圓錐狀屈折面與第2稜鏡部8b的凸圓錐狀屈折面，是可接合而互補的形狀。又，第1稜鏡部8a與第2稜鏡部8b之至少其一被構成可沿著光軸AX移動。第1稜鏡部8a的凹圓錐狀屈折面與第2稜鏡部8b的凸圓錐狀屈折面之間的間隔是可變的。Next, the conical cylindrical mirror system 8 follows the first side portion 8a which is a flat surface on the opposite side of the light source side and has a concave conical shape on the opposite side of the light source side, and the opposite side of the mask side. It is composed of a second weir portion 8b which is flat and has a convex conical shape on the side of the light source. The concave conical fracture surface of the first weir portion 8a and the convex conical fracture surface of the second weir portion 8b are joined and complementary. Further, at least one of the first weir portion 8a and the second weir portion 8b is configured to be movable along the optical axis AX. The interval between the concave conical frustum of the first weir portion 8a and the convex conical frustum of the second weir portion 8b is variable.
於此，對於第1稜鏡部8a的凹圓錐狀屈折面與第2稜鏡部8b的凸圓錐狀屈折面是相互接合的狀態，圓錐柱狀鏡系統8做為平行平面板的機能，且不會影響到被形成的輪帶狀二次光源。然而，使第1稜鏡部8a的凹圓錐狀屈折面與第2稜鏡部8b的凸圓錐狀屈折面間離時，圓錐柱狀鏡系統8做為所謂光束擴展器的機能。因此，隨著圓錐柱狀鏡系統8的間隔變化，變化向所定面7的入射光角度。Here, the concave conical frustum of the first crotch portion 8a and the convex conical frustum of the second crotch portion 8b are joined to each other, and the conical cylindrical mirror system 8 functions as a parallel flat plate, and It does not affect the formed belt-shaped secondary light source. However, the concave conical inflection of the first crotch portion 8a is madeWhen the surface is separated from the convex conical frustum of the second weir portion 8b, the conical cylindrical mirror system 8 functions as a so-called beam expander. Therefore, as the interval of the conical cylindrical mirror system 8 changes, the incident light angle to the fixed surface 7 is changed.
圖2，繪示相對輪帶狀二次光源，圓錐柱狀鏡系統的作用說明。參照圖2，在設定圓錐柱狀鏡系統8的間隔為零且伸縮透鏡9的焦點距離最小值的狀態(以下稱標準狀態)，被形成最小輪帶狀二次光源30a，利用使圓錐柱狀鏡系統8的間隔從零到所定值而擴大，其寬度(外徑與內徑的差的1/2：圖中以箭號表示)不會變化，外徑與內徑一起擴大，而變化成輪帶狀二次光源30b。換言之，利用圓錐柱狀鏡系統8的作用，輪帶狀二次光源的寬度不會變化，其輪帶比(內徑/外徑)與大小(外徑)一起變化。FIG. 2 is a view illustrating the action of the conical cylindrical mirror system with respect to the wheel-shaped secondary light source. Referring to Fig. 2, in a state in which the interval between the conical cylindrical mirror system 8 is zero and the focal length of the telescopic lens 9 is the minimum value (hereinafter referred to as a standard state), the minimum band-shaped secondary light source 30a is formed, and the conical columnar shape is used. The interval of the mirror system 8 is enlarged from zero to a predetermined value, and the width (1/2 of the difference between the outer diameter and the inner diameter: indicated by an arrow in the figure) does not change, and the outer diameter and the inner diameter are enlarged together, and are changed into A belt-shaped secondary light source 30b. In other words, with the action of the conical cylindrical mirror system 8, the width of the belt-shaped secondary light source does not change, and the belt ratio (inner diameter/outer diameter) and size (outer diameter) vary.
圖3繪示相對輪帶狀二次光源，伸縮透鏡的作用說明。參照圖3，在標準狀態被形成的輪帶狀二次光源30a，利用伸縮透鏡9的焦點距離從最小值到所定值擴大，其全體形狀相似地擴大而變化成輪帶狀二次光源30c。換言之，利用伸縮透鏡9的作用，輪帶狀二次光源的輪帶比不會變化，其寬度與大小(外徑)一起變化。FIG. 3 illustrates the action of the telescopic lens with respect to the wheeled secondary light source. With reference to Fig. 3, the belt-shaped secondary light source 30a formed in the standard state is enlarged by the focal length of the telescopic lens 9 from the minimum value to the predetermined value, and the overall shape thereof is similarly enlarged to be changed into the belt-shaped secondary light source 30c. In other words, with the action of the telescopic lens 9, the belt-to-belt ratio of the belt-shaped secondary light source does not change, and its width varies with the size (outer diameter).
圖4繪示圖1的偏光監視器的內部結構示意斜視圖。參照圖4，偏光監視器12包含：被配置於微複眼透鏡11與集光系統13之間的光路的第1分光器12a。第1分光器12a例如是利用石英玻璃形成之沒有塗佈的平行面板(即是素玻璃)的型態，且其具有將與入射光的偏光狀態相異的偏光狀態的反射光從光路取出的機能。4 is a schematic perspective view showing the internal structure of the polarization monitor of FIG. 1. Referring to Fig. 4, polarized light monitor 12 includes a first beam splitter 12a disposed in an optical path between micro eye-eye lens 11 and light collecting system 13. The first spectroscope 12a is, for example, a type in which a parallel plate (that is, a plain glass) which is formed by using quartz glass and which is not coated, and which has a polarized state in which a polarized state different from the incident state of light is taken out from the optical path. function.
利用第1分光器12a而從光路被取出的光，入射於第2分光器12b。第2分光器12b與第1分光器12a相同，例如是利用石英玻璃形成的沒有塗佈的平行面板型態，且其具有使與入射光的偏光狀態相異的偏光狀態的反射光發生的機能。接著，進行設定使相對第1分光器12a的P偏光成為相對第2分光器12b的S偏光，且相對第1分光器12a的S偏光成為相對第2分光器12b的P偏光。The light extracted from the optical path by the first spectroscope 12a is incident on the second spectroscope 12b. Similarly to the first beam splitter 12a, the second spectroscope 12b is, for example, a non-coated parallel panel type formed of quartz glass, and has a function of generating reflected light in a polarized state different from the polarization state of incident light. . Then, the P-polarized light with respect to the first spectroscope 12a is set to be S-polarized light with respect to the second spectroscope 12b, and the S-polarized light with respect to the first spectroscope 12a is P-polarized with respect to the second spectroscope 12b.
又，透過第2分光器12b的光是利用第1光度檢測器12c而被檢測，在第2分光器12b被反射的光是利用第2光度檢測器12d而被檢測。第1光度檢測器12c與第2光度檢測器12d的輸出，分別被輸給控制部(未示於圖)。控制部依需要驅動構成偏光狀態切換部4的1/4波長板4a、1/2波長板4b與消偏振鏡4c。Further, the light transmitted through the second spectroscope 12b is detected by the first photometric detector 12c, and the light reflected by the second spectroscope 12b is detected by the second photometric detector 12d. The outputs of the first photometric detector 12c and the second photometric detector 12d are respectively output to a control unit (not shown). The control unit drives the quarter-wavelength plate 4a, the half-wavelength plate 4b, and the depolarizer 4c that constitute the polarization state switching unit 4 as needed.
如上述，關於第1分光器12a與第2分光器12b，對於P偏光的反射率與S偏光的反射率，實質上是不同。因此，對於偏光監視器12，從第1分光器12a的反射光，含有例如往第1分光器12a的入射光的約10%的S偏光成分(對第1分光器12a的S偏光成分是對第2分光器12b的P偏光成分)，與例如往第1分光器12a的入射光的約1%的P偏光成分(對第1分光器12a的P偏光成分是對第2分光器12b的S偏光成分)。As described above, the reflectance of the P-polarized light and the reflectance of the S-polarized light are substantially different between the first spectroscope 12a and the second spectroscope 12b. Therefore, the reflected light from the first spectroscope 12a includes, for example, about 10% of the S-polarized component of the incident light to the first spectroscope 12a (the S-polarized component to the first spectroscope 12a is the pair). The P-polarized component of the second spectroscope 12b is, for example, about 1% of the P-polarized component of the incident light to the first spectroscope 12a (the P-polarized component of the first spectroscope 12a is the pair of the second spectroscope 12b) Polarized component).
又，從第2分光器12b的反射光，含有例如往第1分光器12a的入射光的約10%×1%=0.1%的P偏光成分(對第1分光器12a的P偏光成分是對第2分光器12b的S偏光成分)，與例如往第1分光器12a的入射光的約1%×10%=0.1%的的S偏光成分(對第1分光器12a的S偏光成分是對第2分光器12b的P偏光成分)。In addition, the reflected light from the second spectroscope 12b contains, for example, a P-polarized component of about 10% × 1% = 0.1% of the incident light to the first spectroscope 12a (the P-polarized component of the first spectroscope 12a is a pair) S polarized light of the second beam splitter 12bIn the component, the S-polarized component of about 1% × 10% = 0.1% of the incident light to the first spectroscope 12a (the S-polarized component to the first spectroscope 12a is the P-polarized light to the second spectroscope 12b) ingredient).
如此，對於偏光監視器12，第1分光器12a回應其反射特性而具有將與入射光偏光狀態相異的偏光狀態的反射光從光路取出的機能。其結果，很少受到第2分光器12b造成的偏光變動的影響，根據第1光度檢測器12c的輸出(關於第2分光器12b的透過光強度資料，即是從第1分光器12a的反射光約相同偏光狀態的光的強度資料)，可以檢知往第1分光器12a的入射光的偏光狀態(偏光度)，進而往罩幕M的照明光的偏光狀態。As described above, in the polarization monitor 12, the first spectroscope 12a has a function of taking out reflected light of a polarization state different from the incident state of the incident light from the optical path in response to the reflection characteristic. As a result, it is less affected by the polarization variation caused by the second spectroscope 12b, and is based on the output of the first photometric detector 12c (the transmission light intensity data of the second spectroscope 12b, that is, the reflection from the first spectroscope 12a) The intensity information of the light in the same polarization state can be detected, and the polarization state (polarization degree) of the incident light to the first spectroscope 12a and the polarization state of the illumination light to the mask M can be detected.
又，對於偏光監視器12，被設定為相對第1分光器12a的P偏光為對第2分光器12b的S偏光，且對第1分光器12a的S偏光為對第2分光器12b的P偏光。其結果，根據第2光度檢測器12d的輸出(關於第1分光器12a與第2分光器12b被順次反射光的強度資料)，實質上不受往第1分光器12a的入射光的偏光狀態的變化的影響，可以檢知往第1分光器12a的入射光的光量(強度)，進而往罩幕M的照明光的光量。Further, in the polarization monitor 12, the P-polarized light to the first spectroscope 12a is set to be S-polarized to the second spectroscope 12b, and the S-polarized light to the first spectroscope 12a is set to the second spectroscope 12b. Polarized light. As a result, the output of the second photometric detector 12d (the intensity data of the sequentially reflected light of the first spectroscope 12a and the second spectroscope 12b) is substantially not affected by the polarization of the incident light to the first spectroscope 12a. The influence of the change can detect the amount of light (intensity) of the incident light to the first spectroscope 12a and the amount of illumination light to the mask M.
接著，使用偏光監視器12，檢知往第1分光器12a的入射光的偏光狀態，進而可以判定是否往罩幕M的照明光是所要的非偏光狀態、直線偏光狀態、或圓偏光狀態。控制部根據由偏光監視器12的檢知結果，確認往罩幕M(進而晶圓W)的照明光是否為所要的非偏光狀態、直線偏光狀態、或圓偏光狀態的情形，驅動調整構成偏光狀態切換部4的1/4波長板4a、1/2波長板4b與消偏振鏡4c，而可以調整往罩幕M的照明光的狀態為所要的非偏光狀態、直線偏光狀態、或圓偏光狀態。Next, the polarization monitor 12 is used to detect the polarization state of the incident light to the first spectroscope 12a, and it is also possible to determine whether or not the illumination light to the mask M is in a desired non-polarized state, a linearly polarized state, or a circularly polarized state. The control unit confirms whether or not the illumination light to the mask M (and further the wafer W) is in a desired non-polarized state or linearly polarized shape based on the detection result of the polarization monitor 12.In the state of the state or the circularly polarized state, the quarter-wave plate 4a, the half-wavelength plate 4b, and the depolarizer 4c constituting the polarization state switching unit 4 are driven and adjusted, and the state of the illumination light to the mask M can be adjusted to The desired non-polarized state, linearly polarized state, or circularly polarized state.
再者，取代輪帶照明用的繞射光學元件5的4極照明用的繞射光學元件(未示於圖)，藉由設定於照明光路中，可以進行4極照明。4極照明用的繞射光學元件，在入射有矩形狀的斷面的平行光束的情形，有在其遠場形成4極狀的光強度分佈的機能。因此，穿過4極照明用的繞射光學元件的光束，在微複眼透鏡11的入射面，形成例如以光軸AX做為中心的4個圓形狀照射區域所組成的4極狀照射區域。其結果，微複眼透鏡11的後側焦點面或其附近，與被形成於入射面的照射區域相同，被形成4極狀的二次光源。Further, instead of the diffractive optical element (not shown) for the four-pole illumination of the diffractive optical element 5 for the belt illumination, the four-pole illumination can be performed by being set in the illumination optical path. The diffractive optical element for 4-pole illumination has a function of forming a quadrupole light intensity distribution in the far field in the case of a parallel beam incident on a rectangular cross section. Therefore, the light beam that has passed through the diffractive optical element for 4-pole illumination forms a quadrupole-shaped irradiation region composed of, for example, four circular-shaped irradiation regions centered on the optical axis AX on the incident surface of the micro-overlook lens 11. As a result, the rear focal plane of the micro fly's eye lens 11 or its vicinity is formed into a quadrupole secondary light source in the same manner as the irradiation region formed on the incident surface.
又，取代輪帶照明用的繞射光學元件5的圓形照明用的繞射光學元件(未示於圖)，藉由設定於照明光路中，可以進行一般的圓形照明。圓形照明用的繞射光學元件，在入射有矩形狀的斷面的平行光束的情形，有在其遠場形成圓形狀的光強度分佈的機能。因此，穿過圓形照明用的繞射光學元件的光束，在微複眼透鏡11的入射面，形成例如以光軸AX做為中心的圓形狀照射區域所組成的4極狀照射區域。其結果，微複眼透鏡11的後側焦點面或其附近，與被形成於入射面的照射區域相同，被形成圓形狀的二次光源。Further, in place of the diffractive optical element (not shown) for circular illumination of the diffractive optical element 5 for belt illumination, it is possible to perform general circular illumination by being set in the illumination optical path. A diffractive optical element for circular illumination has a function of forming a circular light intensity distribution in a far field in the case of a parallel beam incident on a rectangular cross section. Therefore, the light beam that has passed through the diffractive optical element for circular illumination forms a quadrupole-shaped irradiation region composed of, for example, a circular-shaped irradiation region centered on the optical axis AX on the incident surface of the micro-overlook lens 11. As a result, the rear focal plane of the micro fly's eye lens 11 or its vicinity is formed into a circular secondary light source in the same manner as the irradiation region formed on the incident surface.
再者，取代輪帶照明用的繞射光學元件5的其他多極照明用的繞射光學元件(未示於圖)，藉由設定於照明光路中，可以進行各種多極照明(2極照明、8極照明等)。同樣地，取代輪帶照明用的繞射光學元件5的有適當特性的繞射光學元件，藉由設定於照明光路中，可以進行各種形態的變換照明。Further, in place of the diffractive optical element (not shown) for the multi-polar illumination of the diffractive optical element 5 for the belt illumination, various multi-pole illumination (2-pole illumination) can be performed by setting in the illumination optical path. , 8-pole lighting, etc.). Similarly, in place of the diffractive optical element having the appropriate characteristics of the diffractive optical element 5 for the belt illumination, it is possible to perform various types of conversion illumination by being set in the illumination optical path.
圖5繪示圖1的偏光變換元件的內部結構示意圖。圖6繪示水晶旋光性說明圖。圖7繪示利用偏光變換元件的作用，被設定成周方向偏光狀態的輪帶狀二次光源示意圖。根據本發明實施例的偏光變換元件10，被配置在微複眼透鏡11的正前面，即是照明光學裝置(1~PL)的瞳或其附近。因此，在輪帶照明的情形，對偏光變換元件10入射有斷面約輪帶狀且以光軸AX做為中心的光束。FIG. 5 is a schematic diagram showing the internal structure of the polarization conversion element of FIG. 1. FIG. Fig. 6 is a diagram showing the crystal optical rotation. Fig. 7 is a schematic view showing a belt-shaped secondary light source set to a circumferentially polarized state by the action of a polarization conversion element. The polarization conversion element 10 according to the embodiment of the present invention is disposed directly in front of the micro fly's eye lens 11, that is, at or near the illumination optical device (1 to PL). Therefore, in the case of the belt illumination, the polarization conversion element 10 is incident on a light beam having a cross-sectional shape of a belt and having an optical axis AX as a center.
參照圖5，偏光變換元件10，有全體光軸AX做為中心輪帶狀的有效區域，其輪帶狀的有效區域以光軸AX做為中心，利用在圓周方向等分成8個扇形形狀的的基本元件被構成。在這些8個基本元件，夾著光軸AX相對的一對基本元件相互有相同特性。即是，8個基本元件，延著光穿過方向(Y方向)的厚度(光軸方向的長度)相互不同的4種基本元件10A~10D各含2個。Referring to Fig. 5, the polarization conversion element 10 has an entire optical axis AX as an active area of a center belt shape, and its belt-shaped effective area is centered on the optical axis AX, and is equally divided into eight sector shapes in the circumferential direction. The basic components are constructed. In these eight basic elements, a pair of basic elements opposed to each other across the optical axis AX have the same characteristics. In other words, each of the four basic elements 10A to 10D having a thickness (the length in the optical axis direction) that is different from each other in the light passing direction (Y direction) is two.
具體而言，設定成第1基本元件10A的厚度最大，第4基本元件10D的厚度最小，第2基本元件10B的厚度比第3基本元件10C的厚度大。其結果，偏光變換元件10的一方的面(例如入射面)為平面狀，而另一面(例如出射面)，利用各基本元件10A~10D的厚度不同，成為凹凸狀。又，可以偏光變換元件10的雙面(入射面與出射面)一起形成凹凸狀。Specifically, the thickness of the first basic element 10A is set to be the largest, and the thickness of the fourth basic element 10D is the smallest, and the thickness of the second basic element 10B is larger than the thickness of the third basic element 10C. As a result, one surface (for example, an incident surface) of the polarization conversion element 10 is planar, and the other surface (for example, an exit)The surface of each of the basic elements 10A to 10D is different in thickness and has a concavo-convex shape. Further, the both sides (the incident surface and the exit surface) of the polarization conversion element 10 may be formed in a concavo-convex shape.
又，本實施例，各基本元件10A~10D是利用有旋光性的光學材料亦即是做為結晶材料的水晶所構成，各基本元件10A~10D的結晶光學軸與光軸AX約一致，即是設定成與入射光的行進方向約一致。以下，參照圖6，對水晶的旋光性進行簡單說明。參照圖6，由厚度為d的水晶所構成的平行面板光學部材100，其結晶光學軸與光軸AX被配置成一致。如此情形，利用光學部材100的旋光性，入射的直線偏光的偏光方向對光軸AX僅旋轉一角度θ的狀態被射出。Further, in the present embodiment, each of the basic elements 10A to 10D is formed of an optical material which is optically active, that is, a crystal material, and the crystal optical axes of the basic elements 10A to 10D are approximately the same as the optical axis AX. It is set to approximately coincide with the traveling direction of the incident light. Hereinafter, the optical rotation of the crystal will be briefly described with reference to Fig. 6 . Referring to Fig. 6, a parallel panel optical member 100 composed of a crystal having a thickness d has a crystal optical axis aligned with an optical axis AX. In this case, by the optical rotation of the optical member 100, the polarization direction of the incident linearly polarized light is emitted while the optical axis AX is rotated by only one angle θ.
此時，光學部材100的旋光性造成偏光方向的旋轉角(旋光角度)θ，利用光學部材100的厚度d與旋光能ρ，以下式(a)表示。At this time, the optical rotation of the optical member 100 causes a rotation angle (rotation angle) θ in the polarization direction, and is expressed by the following formula (a) by the thickness d of the optical member 100 and the optical rotation energy ρ.
θ=d．ρ (a)θ=d. ρ (a)
一般，水晶的旋光能ρ為波長依存性(依存使用光的波長其不同旋光能值：旋光分散)，具體地，使用光的波長短，會有愈大的傾向。根據在「應用光學II」的第167頁的記載，相對於具有250.3nm的波長的光，水晶的旋光能ρ為153.9度/mm。In general, the optical energy ρ of a crystal is wavelength-dependent (depending on the wavelength of light used, its optical energy value: optical dispersion), and specifically, the wavelength of light used is short, and the tendency is greater. According to the description on page 167 of "Applied Optics II", the optical energy ρ of the crystal is 153.9 degrees/mm with respect to light having a wavelength of 250.3 nm.
在本實施例，第1基本元件10A，被設定成厚度dA，在Z方向偏光的直線偏光的光入射的情形，Z方向繞著Y軸使+180度旋轉的方向，即是在Z方向有偏光方向的直線偏光的光使射出。因此，在此情形，如圖7所示的輪帶狀二次光源31之中，受到一對第1基本元件10A的旋光作用的光束，通過形成的一對圓弧狀區域31A的光束的偏光方向是在Z方向。In the present embodiment, the first basic element 10A is set to have a thickness dA, and in the case where the linearly polarized light polarized in the Z direction is incident, the Z direction is rotated by +180 degrees around the Y axis, that is, in the Z direction. Straight line in the direction of polarizationThe polarized light is emitted. Therefore, in this case, among the belt-shaped secondary light sources 31 shown in Fig. 7, the light beams that are subjected to the optical rotation of the pair of first basic elements 10A pass through the polarization of the light beams of the pair of arc-shaped regions 31A formed. The direction is in the Z direction.
第2基本元件10B，被設定成厚度dB，在Z方向偏光的直線偏光的光入射時，Z方向繞著Y軸使+135度旋轉的方向，即是在Z方向繞著Y軸使-45度旋轉的方向，有偏光方向的直線偏光的光射出。因此，在此情形，如圖7所示的輪帶狀二次光源31之中，受到一對第2基本元件10B的旋光作用的光束，通過形成的一對圓弧狀區域31B的光束的偏光方向，是Z方向繞著Y軸使旋轉-45度的方向。The second basic element 10B is set to have a thickness dB. When the linearly polarized light polarized in the Z direction is incident, the Z direction is rotated by +135 degrees around the Y axis, that is, -45 in the Z direction around the Y axis. In the direction of the degree of rotation, the linearly polarized light having the polarization direction is emitted. Therefore, in this case, among the belt-shaped secondary light sources 31 shown in Fig. 7, the light beams which are subjected to the optical rotation of the pair of second basic elements 10B pass through the polarization of the light beams of the pair of arc-shaped regions 31B formed. The direction is the direction in which the Z direction is rotated by -45 degrees around the Y axis.
第3基本元件10C，被設定成厚度dC，在Z方向偏光的直線偏光的光入射時，Z方向繞著Y軸使+90度旋轉的方向，即是有X方向偏光方向的直線偏光的光射出。因此，在此情形，如圖7所示的輪帶狀二次光源31之中，受到一對第3基本元件10C的旋光作用的光束，通過形成的一對圓弧狀區域31C的光束的偏光方向是在X方向。The third basic element 10C is set to have a thickness dC, and when the linearly polarized light polarized in the Z direction is incident, the Z direction is rotated by +90 degrees around the Y axis, that is, the linearly polarized light having the X-direction polarization direction. Shoot out. Therefore, in this case, among the belt-shaped secondary light sources 31 shown in Fig. 7, the light beams which are subjected to the optical rotation of the pair of third basic elements 10C pass through the polarized light beams of the pair of arc-shaped regions 31C formed. The direction is in the X direction.
第4基本元件10D，被設定成厚度dD，在Z方向偏光的直線偏光的光入射時，Z方向繞著Y軸使+45度旋轉的方向有偏光方向的直線偏光的光射出。因此，在此情形，如圖7所示的輪帶狀二次光源31之中，受到一對第4基本元件10D的旋光作用的光束，通過形成的一對圓弧狀區域31D的光束的偏光方向，是Z方向繞著Y軸使旋轉+45度的方向。The fourth basic element 10D is set to have a thickness dD, and when linearly polarized light polarized in the Z direction is incident, linearly polarized light having a polarization direction in a direction in which the Z direction is rotated by +45 degrees around the Y axis is emitted. Therefore, in this case, among the belt-shaped secondary light sources 31 shown in Fig. 7, the light beams which are subjected to the optical rotation of the pair of fourth basic elements 10D pass through the polarized light beams of the pair of arc-shaped regions 31D formed. Direction, the Z direction is rotated around the Y axis by +45 degreesThe direction.
再者，對分別被形成的8個基本元件進行組合可以得到偏光變換元件10，也可以利用將平行平面板的水晶基板形成所要的凹凸形狀(段差)而得到偏光變換元件10。又，不將偏光變換元件10從光路退開時，可以進行通常的圓形照明，且設定圓形狀的中央區域10E，其大小為偏光變換元件10的有效區域的徑方向大小的大於等於3/10，較佳為大於等於1/3，且沒有旋光性。於此，中央區域10E，可以利用沒有旋光性的光學材料例如石英而形成，也可以是簡單的圓形狀開口。但是，中央區域10E不是偏光變換元件10的必要元件。再者，中央區域10E的大小是由周方向偏光狀態區域與非此區域的邊界所決定。Further, the polarization conversion element 10 can be obtained by combining the eight basic elements respectively formed, and the polarization conversion element 10 can be obtained by forming a desired uneven shape (step) of the crystal substrate of the parallel plane plate. Further, when the polarization conversion element 10 is not retracted from the optical path, normal circular illumination can be performed, and a circular central region 10E having a size larger than or equal to 3/ in the radial direction of the effective region of the polarization conversion element 10 can be set. 10, preferably 1/3 or more, and no optical rotation. Here, the central region 10E may be formed using an optical material having no optical activity such as quartz, or may be a simple circular opening. However, the central region 10E is not an essential component of the polarization conversion element 10. Furthermore, the size of the central region 10E is determined by the boundary between the circumferentially polarized state region and the non-region.
於本實施例，周方向偏光輪帶照明時(通過輪帶狀的二次光源的光束被設定成周方向偏光狀態的變形照明)，有Z方向偏光的直線偏光的光被入射於偏光變換元件10。其結果，微複眼透鏡11的後側焦點面或其附近，如圖7所示，輪帶狀的二次光源(輪帶狀的瞳分佈)31被形成，通過此輪帶狀的二次光源31的光束被設定成周方向偏光狀態。對於周方向偏光狀態，分別通過構成輪帶狀的二次光源31的圓弧狀區域31A~31D的光束，沿著各圓弧狀區域31A~31D的圓周方向，而在中心位置的直線偏光狀態的偏光方向是大約與以光軸AX做為中心的圓的切線方向一致。In the present embodiment, when the circumferential direction polarization belt is illuminated (the light beam of the secondary light source of the belt-shaped secondary light source is set to the deformation illumination in the circumferential direction polarization state), the linearly polarized light having the Z-direction polarization is incident on the polarization conversion element. 10. As a result, as shown in FIG. 7 , a rear-side focal plane of the micro-eye-eye lens 11 or a vicinity thereof is formed, and a band-shaped secondary light source (a belt-shaped 瞳 distribution) 31 is formed, and the secondary light source passing through the belt-shaped shape is formed. The light beam of 31 is set to a circumferentially polarized state. In the circumferential direction polarization state, the light beams of the arc-shaped regions 31A to 31D constituting the belt-shaped secondary light source 31 are linearly polarized at the center position along the circumferential direction of each of the arc-shaped regions 31A to 31D. The direction of polarization is approximately the same as the tangential direction of the circle centered on the optical axis AX.
接著，於本實施例，與因光圈大而發生光量損失的傳統技術不同，利用偏光變換元件10的旋光作用，不會有實質的光量損失發生，可以形成周方向偏光狀態的輪帶狀的二次光源31。換言之，對於本實施例的照明光學裝置，良好地抑制光量損失，可以形成周方向偏光狀態的輪帶狀的照明分佈。再者，對於本實施例，因為使用光學元件的偏光作用，偏光變換元件的製造容易，對於典型的各基本元件的厚度公差可以很緩設定，達到優良效果。Then, in the present embodiment, unlike the conventional technique in which the amount of light loss occurs due to the large aperture, the optical rotation of the polarization conversion element 10 is not practical.A qualitative loss of light amount occurs, and a band-shaped secondary light source 31 in a circumferentially polarized state can be formed. In other words, with the illumination optical device of the present embodiment, the light amount loss is favorably suppressed, and the belt-shaped illumination distribution in the circumferential direction polarization state can be formed. Further, with the present embodiment, since the polarization of the optical element is used, the manufacturing of the polarization conversion element is easy, and the thickness tolerance of each of the basic elements can be set very slowly, achieving an excellent effect.
又，根據周方向偏光狀態的輪帶狀照明瞳分佈的周方向偏光輪帶狀照明，做為最終的被照明面的晶圓W被照射的光是以S偏光為主要成份的偏光狀態。於此，S偏光，是有相對入射面垂直方向的偏光方向的直線偏光(垂直入射面的方向電性向量震動的偏光)。但是，入射面，定義為當光到達媒介質的界面(被照射面：晶圓W表面)，包含在其點上的界面法線與入射光的面。In addition, the circumferentially polarized wheel-shaped illumination in which the belt-shaped illumination 瞳 is distributed in the circumferential direction is used, and the light irradiated to the wafer W as the final illuminated surface is in a polarized state mainly composed of S-polarized light. Here, the S-polarized light is a linearly polarized light having a polarization direction in a direction perpendicular to the incident surface (a polarized light of an electric vector vibration in a direction perpendicular to the incident surface). However, the incident surface is defined as the interface where the light reaches the medium (irradiated surface: the surface of the wafer W), and the interface normal and the surface of the incident light are included at the point.
其結果，對於周方向偏光輪帶狀照明，可以提升投影光學系統的光學性能(焦點深度等)，可以得到在晶圓(感光性基板)上高對比的罩幕圖案像。即是，對於本發明實施例，因為使用可以良好地抑制光量損失，且形成周方向偏光狀態的輪帶狀照明瞳分佈的照明光學裝置，用適當的照明條件可以忠實且高產能地將微細圖案轉寫。As a result, in the circumferential direction polarizing belt band illumination, the optical performance (focus depth, etc.) of the projection optical system can be improved, and a mask pattern image with high contrast on the wafer (photosensitive substrate) can be obtained. That is, in the embodiment of the present invention, since the illumination optical device which can suppress the light amount loss well and which forms the band-shaped illumination 瞳 distribution in the circumferentially polarized state is used, the fine pattern can be faithfully and efficiently produced with appropriate illumination conditions. Transfer.
接著，於本實施例，利用有X方向偏光方向的直線偏光的光使其入射偏光變換元件10，如圖8所示通過輪帶狀二次光源32的光束設定為徑方向偏光狀態，且進行徑方向偏光輪帶照明(通過輪帶狀二次光源32的光束被設定成徑方向偏光狀態的變形照明)。於徑方向偏光狀態，分別通過構成輪帶狀二次光源32的圓弧狀區域32A~32D的光束，沿著各圓弧狀區域32A~32D的圓周方向，而在中心位置的直線偏光狀態是大約與以光軸AX做為中心的圓的半徑方式一致。Next, in the present embodiment, the linearly polarized light having the X-direction polarization direction is incident on the polarization conversion element 10, and the light beam passing through the belt-shaped secondary light source 32 is set to the radial direction polarization state as shown in FIG. The radial direction of the wheel is illuminated (the light beam passing through the belt-shaped secondary light source 32 is set to be deformed in the radial direction of the radial direction). In the radial direction of the radial direction, respectivelyThe light beams constituting the arc-shaped regions 32A to 32D of the belt-shaped secondary light source 32 are along the circumferential direction of each of the arc-shaped regions 32A to 32D, and the linearly polarized state at the center position is approximately the same as the optical axis AX. The center circle has the same radius.
根據徑方向偏光狀態的輪帶狀照明瞳分佈的徑方向偏光輪帶照明，被照射到做為最終的被照明面的晶圓W的光，是以P偏光為主要成份的偏光狀態。於此，P偏光，是相對上述定義的入射面的平行方向的偏光方向的直線偏光(平行入射面方向電性向量震動的偏光)。其結果，徑方向偏光輪帶狀照明，被塗佈於晶圓上的光阻的光反射率減小，在晶圓(感光性基板)上，可以得到良好的罩幕圖案像。The light in the radial direction of the belt-shaped illumination 瞳 distributed in the radial direction of the radial direction is irradiated to the wafer W as the final illuminated surface, and is a polarization state in which P-polarized light is the main component. Here, the P-polarized light is a linearly polarized light having a polarization direction in a direction parallel to the incident surface defined above (a polarized light of an electric vector vibration in a direction parallel to the incident surface). As a result, in the radial direction of the strip-shaped illumination, the light reflectance of the photoresist applied to the wafer is reduced, and a good mask pattern image can be obtained on the wafer (photosensitive substrate).
又，於上述實施例，入射偏光變換元件10的光束，利用在Z方向有偏光方向的直線偏光狀態與在X方向有偏光方向的直線偏光狀態之間的切換，而實現周方向偏光輪帶照明與徑方向偏光輪帶照明。但是，不限定於此，例如對於在Z方向或X方向有偏光方向的直線偏光狀態的入射光束，利用偏光變換元件10在如圖5所示的第1狀態與繞著光軸AX使僅90度回轉的第2狀態之間切換，可以實現周方向偏光輪帶照明與徑方向偏光輪帶照明。Further, in the above embodiment, the light beam incident on the polarization conversion element 10 is switched between the linearly polarized state having the polarization direction in the Z direction and the linearly polarized state having the polarization direction in the X direction, thereby realizing the circumferentially polarized wheel illumination. Polarized wheel with radial direction. However, the present invention is not limited thereto. For example, for the incident light beam in the linearly polarized state having the polarization direction in the Z direction or the X direction, the polarization conversion element 10 is only 90 in the first state shown in FIG. 5 and around the optical axis AX. The second state of the degree of rotation is switched, and the circumferential direction polarization wheel illumination and the radial direction polarization wheel illumination can be realized.
又，於上述實施例，微複眼透鏡11的正前方配置偏光變換元件10。但是，不限定於此，一般照明裝置(1~PL)的瞳或其附近，例如投影光學系統PL的瞳或其附近，成像光學系統15的瞳或其附近，圓錐柱狀鏡系統8的正前方(無焦點透鏡6的瞳或其附近)等可以配置偏光變換元件10。Further, in the above embodiment, the polarization conversion element 10 is disposed directly in front of the micro fly's eye lens 11. However, the present invention is not limited thereto, and the vicinity of the illuminating device (1 to PL) or its vicinity, for example, the 投影 of the projection optical system PL or its vicinity, the 成像 of the imaging optical system 15 or its vicinity, the positive of the conical cylindrical mirror system 8 Polarization conversion element can be disposed in front (without the focus of the focus lens 6 or in the vicinity thereof)10.
因此，如果投影光學系統PL中與成像光學系統15中配置偏光變換元件10，因為偏光變換元件10所要的有效徑容易大，考慮到有困難得到高品質的大水晶基板的現狀而不佳。又，如果圓錐柱狀鏡系統8的正前方配置偏光變換元件10，可以使偏光變換元件10所要的有效徑減小，但是到最終被照射面的晶圓W的距離長，防止透鏡反射的塗佈與鏡子的反射膜等會改變偏光狀態的因素容易介入在其光路中而不佳。即是，透鏡的防止反射塗佈與鏡子的反射膜，容易由於偏光狀態(P偏光與S偏光)與入射角的反射率而變差，進而容易變化偏光狀態。Therefore, if the polarization conversion element 10 is disposed in the projection optical system PL and the imaging optical system 15, since the effective diameter of the polarization conversion element 10 is likely to be large, it is not preferable in view of the difficulty in obtaining a high-quality large crystal substrate. Further, if the polarization conversion element 10 is disposed directly in front of the conical prism system 8, the effective diameter of the polarization conversion element 10 can be reduced, but the distance from the wafer W to the finally irradiated surface is long, and the reflection of the lens is prevented. The factors such as the reflection film of the cloth and the mirror that change the state of the polarized light are easily interposed in the optical path. In other words, the antireflection coating of the lens and the reflection film of the mirror are likely to be deteriorated by the reflectance of the polarized state (P-polarized light and S-polarized light) and the incident angle, and the polarized state is easily changed.
又，於上述實施例，偏光變換元件10的至少其一面的(例如射出面)被形成凹凸狀，進而偏光變換元件10在周方向有離散(不連續)變化厚度分佈。但是，不限定於此，如偏光變換元件10在周方向具有約不連續變化的厚度分佈，偏光變換元件10的至少其一面(例如射出面)可以形成曲面狀。Further, in the above-described embodiment, at least one surface (for example, the emission surface) of the polarization conversion element 10 is formed in a concavo-convex shape, and the polarization conversion element 10 has a discrete (discontinuous) change in thickness in the circumferential direction. However, the polarization conversion element 10 has a thickness distribution that is discontinuously changed in the circumferential direction, and at least one surface (for example, an emission surface) of the polarization conversion element 10 may be formed in a curved shape.
又，於上述實施例，利用對應輪帶狀的有效區域的8分割的8個扇形狀的基本元件，構成偏光變換元件10。但是，不限定於此，可以例如利用對應圓形狀有效區域的8分割的8個扇形狀的基本元件，或是利用對應圓形狀或輪帶狀的有效區域的4個分割的4個扇形狀的基本元件，或是利用對應圓形狀或輪帶狀的有效區域的16個分割的16個扇形狀的基本元件構成偏光變換元件10。即是，偏光變換元件10的有效區域形狀，有效區域分割數(基本元件的數量)等，可以有多種不同的變形例。Further, in the above embodiment, the polarization conversion element 10 is constituted by eight basic elements of eight fan shapes corresponding to the effective area of the belt. However, the present invention is not limited thereto, and for example, it is possible to use, for example, eight basic fan-shaped basic elements corresponding to the circular effective area, or four divided four-sector shapes corresponding to the circular or wheel-shaped effective area. The basic element or the 16-segment 16-segment basic element corresponding to the circular shape or the belt-shaped effective area constitutes the polarization conversion element 10. That is, polarized lightThe effective area shape of the component 10, the number of effective area divisions (the number of basic elements), and the like can be variously modified.
又，於上述實施例，用水晶形成各種基本元件10A~10D(進而偏光變換元件10)。但是，不限定於此，使用有旋光性的其他適當光學材料可形成各基本元件。與此情形，也可以使用對應使用波長的光有100度/mm以上的旋光能的光學材料。即是，如果使用旋光能小的光學材料，要得到偏光方向所要的旋轉角之所需的厚度會過厚，且由於光量損失的原因而不佳。Further, in the above embodiment, the various basic elements 10A to 10D (and further the polarization conversion element 10) are formed of crystal. However, it is not limited thereto, and each of the basic elements can be formed using other suitable optical materials having optical rotation. In this case, an optical material having an optical rotation energy of 100 degrees/mm or more corresponding to the wavelength of use may be used. That is, if an optical material having a small optical rotation energy is used, the thickness required to obtain the rotation angle required for the polarization direction is too thick, and it is not preferable because of the loss of the amount of light.
又，於上述實施例，偏光變換元件10對應照明光路固定設定，也可以使偏光變換元件10對應照明光路可以插脫設定。又，於上述實施例，雖然相對晶圓W的S偏光與輪帶照明組合為例，也可以相對晶圓W的S偏光與2極或4極等的多極照明與圓形照明組合。又，於上述實施例，往罩幕M的照明條件與往晶圓W的成像條件(數值孔徑與像差)，例如罩幕M的圖案的種類等因此可以自動設定。Further, in the above-described embodiment, the polarization conversion element 10 is fixedly set corresponding to the illumination light path, and the polarization conversion element 10 may be inserted and removed corresponding to the illumination light path. Further, in the above embodiment, the combination of the S-polarized light and the tape illumination of the wafer W may be combined with the S-polarized light of the wafer W and the multi-polar illumination such as two or four poles and the circular illumination. Further, in the above embodiment, the illumination conditions to the mask M and the imaging conditions (numerical aperture and aberration) to the wafer W, for example, the type of the pattern of the mask M, can be automatically set.
圖9繪示多個偏光變換元件可以交換的變化示意圖。又，圖9的變形有例如圖1所示的實施例類似的結構，其差異點在於多個偏光變換元件可以交換的轉台10T(turret)。FIG. 9 is a schematic diagram showing changes in exchange of a plurality of polarization conversion elements. Further, the modification of Fig. 9 has a structure similar to that of the embodiment shown in Fig. 1, for example, in that the turret 10T (turret) in which a plurality of polarization conversion elements can be exchanged.
圖10繪示做為圖9的交換機構的轉台10T被載置多種偏光變換元件10a~10e示意圖。如圖9與圖10所示，對於變形例，與光軸AX平行方向做為軸可以旋轉的轉台10T上，設置多種種類的偏光變換元件10a~10e，利用轉台10T的旋轉作用可以交換多種種類的偏光變換元件10a~10e。又，於圖9，多種種類的偏光變換元件10a~10e之中，僅偏光變換元件10a，10b示於圖。又，對於做為偏光變換元件的交換機構，不限定於轉台10T，例如滑動件也可以。Fig. 10 is a view showing a plurality of polarization conversion elements 10a to 10e on which the turntable 10T as the switching mechanism of Fig. 9 is placed. As shown in FIG. 9 and FIG. 10, in the modified example, a plurality of types of polarization conversion elements 10a to 10e are provided on the turntable 10T which is rotatable in the direction parallel to the optical axis AX, and the turntable 10T is used.The rotation action can exchange a plurality of kinds of polarization conversion elements 10a to 10e. Further, among the various types of polarization conversion elements 10a to 10e, only the polarization conversion elements 10a and 10b are shown in Fig. 9. Further, the switching mechanism as the polarization conversion element is not limited to the turntable 10T, and may be, for example, a slider.
圖11A~11E繪示多種偏光變換元件10a~10e分別的結構示意圖。於圖11A，第1偏光變換元件10a具有與圖5所示的實施例的偏光變換元件10相同的結構。於圖11B，第2偏光變換元件10b，雖然具有與圖11A所示偏光變換元件10a類似的結構，但不同點是於中央區域10E設置有偏光消解部材104c。此偏光消解部材104c具有與圖1所示的消偏振鏡4c相同結構，且有將入射的直線偏光的光變換成非偏光狀態的光的功能。11A to 11E are schematic diagrams showing the structures of the plurality of polarization conversion elements 10a to 10e, respectively. In Fig. 11A, the first polarization conversion element 10a has the same configuration as the polarization conversion element 10 of the embodiment shown in Fig. 5. In FIG. 11B, the second polarization conversion element 10b has a configuration similar to that of the polarization conversion element 10a shown in FIG. 11A, but differs in that the polarization elimination member 104c is provided in the central portion 10E. The polarization-eliminating member 104c has the same configuration as the depolarizer 4c shown in FIG. 1, and has a function of converting incident linearly polarized light into non-polarized light.
於圖11C，第3偏光變換元件10c具有與圖11A所示偏光變換元件10a類似結構，不同點在於中央區域10E的大小較大(第1~第4基本元件10A~10D的寬度較窄)。又，於圖11D，第4偏光變換元件10d具有與圖11C所示偏光變換元件10c類似結構，差異點在於中央區域10E設置偏光消解部材104c。In Fig. 11C, the third polarization conversion element 10c has a structure similar to that of the polarization conversion element 10a shown in Fig. 11A, except that the size of the central portion 10E is large (the widths of the first to fourth basic elements 10A to 10D are narrow). Further, in Fig. 11D, the fourth polarization conversion element 10d has a structure similar to that of the polarization conversion element 10c shown in Fig. 11C, and the difference is that the polarization elimination member 104c is provided in the central portion 10E.
於圖11E，第5偏光變換元件10e不是由8個基本元件所構成，而是由6個基本元件10C、10F、10G組合所構成。第5偏光變換元件10e，以做為全體的光軸AX做為中心有輪帶狀的有效區域，且此輪帶狀的有效區域以光軸AX做為中心，利用在圓周方向等分割成6個扇形狀基本元件10C、10F、10G被構成。在這些6個扇形狀基本元件10C、10F、10G，夾著光軸AX相對的一對基本元件相互有相同特性。即是，6個基本元件10C、10F、10G，沿著光的透過方向(Y方向)的厚度(光軸方向的長度)相互為異的3種類基本元件10C、10F、10G各含2個。In Fig. 11E, the fifth polarization conversion element 10e is not composed of eight basic elements, but is composed of a combination of six basic elements 10C, 10F, and 10G. The fifth polarization conversion element 10e has an effective region in the form of a belt as the center of the optical axis AX as a whole, and the effective region of the belt is centered on the optical axis AX and is divided into 6 by the circumferential direction or the like. The fan-shaped basic elements 10C, 10F, and 10G are configured. In these 6 fan shape basic components10C, 10F, 10G, a pair of basic elements opposed to each other across the optical axis AX have the same characteristics. In other words, the six basic elements 10C, 10F, and 10G each include two types of three types of basic elements 10C, 10F, and 10G having different thicknesses (lengths in the optical axis direction) along the light transmission direction (Y direction).
接著，基本元件10C，與圖7所示的第3基本元件10C有相同機能部材，而省略其機能說明。基本元件10F，被設定有厚度dF，在有Z方向偏光的直線偏光入射情形，Z方向繞著Y軸使旋轉+150度的方向，即是Z方向繞著Y軸使旋轉-30度的方向的偏光方向的直線偏光的光射出。基本元件10G，被設定有厚度dG，在有Z方向偏光的直線偏光入射情形，Z方向繞著Y軸使旋轉+30度方向的偏光方向的直線偏光的光射出。又，取代中央區域10E，也可以設置偏光消解部材104c。Next, the basic element 10C has the same functional component as the third basic element 10C shown in FIG. 7, and the description of the function is omitted. The basic element 10F is set to have a thickness dF. In the case of a linearly polarized light having a Z-direction polarized light, the Z direction is rotated by +150 degrees around the Y-axis, that is, the Z-direction is rotated by -30 degrees around the Y-axis. The linearly polarized light of the polarized direction is emitted. The basic element 10G is set to have a thickness dG, and in the case where the linearly polarized light having the Z-direction polarization is incident, the Z-direction rotates the linearly polarized light in the polarization direction of the +30-degree direction around the Y-axis. Further, instead of the central region 10E, the polarization digestion member 104c may be provided.
又，回到圖10，於轉台10T上設置未載置偏光變換元件的開口部40，對於進行不是周方向偏光照明的偏光照明的情形，進行大的σ值(σ值=照明光學裝置的罩幕側數值孔徑/投影光學系統的罩幕側數值孔徑)的非偏光照明的情形，此開口部40位於照明光路中。Further, returning to Fig. 10, the opening portion 40 on which the polarization conversion element is not placed is provided on the turntable 10T, and a large σ value is performed in the case of performing polarization illumination not in the circumferential direction polarization illumination (σ value = cover of the illumination optical device) In the case of non-polarized illumination of the numerical aperture of the curtain side/the numerical aperture of the mask side of the projection optical system, the opening 40 is located in the illumination light path.
又，如上述，被載置於轉台10T的偏光變換元件10a~10e的中央部，雖然以由圓形狀的開口或沒有旋光性的材料構成中央區域10E或是設置偏光消解部材104c為例示之，也可以配置沒有設置中央區域10E或偏光消解部材104c的偏光變換元件(由扇形狀的基本元件所組成的偏光變換元件)。In addition, as described above, the center portion of the polarization conversion elements 10a to 10e placed on the turntable 10T is exemplified by the central region 10E formed of a circular opening or a material having no optical rotation, or the polarizing digestion member 104c. It is also possible to arrange a polarization conversion element (a polarization conversion element composed of a basic element of a fan shape) in which the central region 10E or the polarization digestion member 104c is not provided.
圖12A~12C繪示利用偏光變換元件的作用被設定成周方向偏光狀態的二次光源的一例示意圖。又，於圖12A~12C，為容易理解的偏光變換元件，重繪於圖示。12A to 12C are diagrams showing an example of a secondary light source in which the action of the polarization conversion element is set to a circumferentially polarized state. Further, in FIGS. 12A to 12C, a polarization conversion element which is easy to understand is redrawn as shown in the drawing.
圖12A，取代繞射光學元件5，在遠場(或是Fraunhofer繞射區域)形成8極狀的光強度分佈的繞射光學元件(光束變換元件)被設置於光路中，且偏光變換元件10a或10b被設置於照明光路的情形，以8極狀的二次光源33示之。因此，通過8極狀的二次光源33的光束被設定成周方向偏光狀態。對於周方向偏光狀態，分別通過構成8極狀的二次光源33的8個圓形區域33A~33D的光束，由8個圓形區域33A~33D結合成圓的圓周方向，即是與這些8個圓形區域33A~33D結合的圓的切線方向約一致的偏光方向的直線偏光狀態。又，於圖12A，雖然8極狀的二次光源33以8個圓形區域33A~33D所構成為例示之，但不限定於有8個區域形狀為圓形。12A, in place of the diffractive optical element 5, a diffractive optical element (beam converting element) which forms an 8-pole light intensity distribution in the far field (or the Fraunhofer diffraction area) is disposed in the optical path, and the polarization conversion element 10a Or 10b is provided in the illumination light path, and is shown by the 8-pole secondary light source 33. Therefore, the light beam that has passed through the 8-pole secondary light source 33 is set to the circumferentially polarized state. In the circumferential direction polarization state, the light beams of the eight circular regions 33A to 33D constituting the eight-pole secondary light source 33 are combined into a circular circumferential direction by eight circular regions 33A to 33D, that is, with these 8 The tangential directions of the circles in which the circular regions 33A to 33D are combined are approximately in a linearly polarized state in the polarization direction. Further, in FIG. 12A, the eight-pole secondary light source 33 is exemplified by eight circular regions 33A to 33D, but is not limited to eight regions having a circular shape.
圖12B，取代繞射光學元件5，在遠場(或是Fraunhofer 繞射區域)形成4極狀的光強度分佈的繞射光學元件(光束變換元件)被設置於光路中，且偏光變換元件10c或10d被設置於照明光路的情形，以4極狀的二次光源34示之。因此，通過4極狀的二次光源34的光束被設定成周方向偏光狀態。對於周方向偏光狀態，分別通過構成4極狀的二次光源34的4個區域34A、34C的光束，由4個區域34A、34C結合成圓的圓周方向，即是與這些4個區域34A、34C結合的圓的切線方向約一致的偏光方向的直線偏光狀態。又，於圖12B，雖然4極狀的二次光源34以4個橢圓形區域34A、34C所構成為例示之，但不限定於4個區域形狀為橢圓形。12B, in place of the diffractive optical element 5, a diffractive optical element (beam converting element) which forms a quadrupole light intensity distribution in the far field (or the Fraunhofer diffraction area) is disposed in the optical path, and the polarization conversion element 10c Or 10d is set in the illumination light path, and is shown by a quadrupole secondary light source 34. Therefore, the light beam that has passed through the quadrupole secondary light source 34 is set to the circumferentially polarized state. In the circumferential direction polarization state, the light beams of the four regions 34A and 34C constituting the quadrupole secondary light source 34 are combined in a circumferential direction of the circle by the four regions 34A and 34C, that is, with the four regions 34A, The linear tangential state of the polarization direction of the circular tangential direction of the circle of 34C is approximately the same.Further, in FIG. 12B, the quadrupole secondary light source 34 is exemplified by four elliptical regions 34A and 34C, but the shape of the four regions is not limited to elliptical.
圖12C，取代繞射光學元件5，在遠場(或是Fraunhofer繞射區域)形成6極狀的光強度分佈的繞射光學元件(光束變換元件)被設置於光路中，且偏光變換元件10e被設置於照明光路的情形，以6極狀的二次光源35示之。因此，通過6極狀的二次光源35的光束被設定成周方向偏光狀態。對於周方向偏光狀態，分別通過構成6極狀的二次光源35的6個區域35C、35F、35G的光束，由6個區域35C、35F、35G結合成圓的圓周方向，即是與這些6個區域35C、35F、35G結合的圓的切線方向約一致的偏光方向的直線偏光狀態。又，於圖12C，雖然6極狀的二次光源35以6個約梯形狀區域35C、35F、35G所構成為例示之，但不限定於6個區域形狀為約梯形狀。12C, in place of the diffractive optical element 5, a diffractive optical element (beam converting element) which forms a six-pole light intensity distribution in the far field (or the Fraunhofer diffraction area) is disposed in the optical path, and the polarization conversion element 10e The case where it is provided in the illumination light path is shown by the six-pole secondary light source 35. Therefore, the light beam that has passed through the six-pole secondary light source 35 is set to the circumferentially polarized state. In the circumferential direction polarization state, the light beams of the six regions 35C, 35F, and 35G constituting the six-pole secondary light source 35 are combined in a circumferential direction of the circle by the six regions 35C, 35F, and 35G, that is, with these 6 The tangential directions of the circles in which the regions 35C, 35F, and 35G are combined are approximately in a linearly polarized state in the polarization direction. Further, in FIG. 12C, the six-pole secondary light source 35 is exemplified by six approximately trapezoidal regions 35C, 35F, and 35G. However, the shape of the six regions is not limited to a trapezoidal shape.
又，於上述實施例與變形例，雖然偏光變換元件繞著光軸被固定，偏光變換元件也可以繞著光軸使旋轉。圖13為設置成繞著光軸可以旋轉的偏光變換元件10f的結構概略圖。Further, in the above-described embodiments and modifications, although the polarization conversion element is fixed around the optical axis, the polarization conversion element can be rotated about the optical axis. Fig. 13 is a schematic view showing the configuration of a polarization conversion element 10f which is provided to be rotatable about an optical axis.
於圖13，偏光變換元件10f，由4個基本元件10A、10C所組合構成。偏光變換元件10f，有做為全體的光軸AX為中心的輪帶狀有效區域，且這輪帶狀有效區域以光軸AX為中心在圓周方向被等分割成4個扇形形狀的基本元件10A、10C。在這4個基本元件10A、10C中，夾著光軸AX相對的一對基本元件相互有相同特性。即是，4個基本元件10A、10C，在沿著光穿過方向(Y方向)的厚度(光軸方向的長度)相互為異的2種基本元件10A、10C分別含2個。In Fig. 13, the polarization conversion element 10f is composed of a combination of four basic elements 10A and 10C. The polarization conversion element 10f has a belt-shaped effective region centered on the entire optical axis AX, and the wheel-shaped effective region is equally divided into four sector-shaped basic elements 10A around the optical axis AX in the circumferential direction. 10C. In the four basic components 10A, 10C, the light is sandwichedThe pair of basic elements opposite to the axis AX have the same characteristics as each other. In other words, the four basic elements 10A and 10C each include two basic elements 10A and 10C having different thicknesses (lengths in the optical axis direction) along the light passing direction (Y direction).
於此，因為基本元件10A是與圖7所示的第1基本元件10A有相同機能的部材，基本元件10C是與圖7所示的第3基本元件10C有相同機能的部材，而省略其機能說明。又，取代中央區域10E的，也可以設置偏光消解部材104c。Here, since the basic element 10A is a member having the same function as the first basic element 10A shown in FIG. 7, the basic element 10C is a member having the same function as the third basic element 10C shown in FIG. 7, and its function is omitted. Description. Further, instead of the central region 10E, the polarization dilation member 104c may be provided.
此偏光變換元件10f，以光軸AX做為中心設定成可以旋轉，例如以光軸AX為中心使+45度或-45度可以旋轉。圖14A~14C繪示利用偏光變換元件10f的作用，被設定成周方向偏光狀態的二次光源的一例示意圖。又，於圖14，為容易理解，偏光變換元件10f重複繪示。The polarization conversion element 10f is set to be rotatable about the optical axis AX. For example, +45 degrees or -45 degrees can be rotated about the optical axis AX. 14A to 14C are diagrams showing an example of a secondary light source that is set to be in a circumferentially polarized state by the action of the polarization conversion element 10f. Further, in Fig. 14, the polarization conversion element 10f is repeatedly shown for easy understanding.
圖14A，取代繞射光學元件5，在遠場(或是Fraunhofer繞射區域)形成2極狀的光強度分佈的繞射光學元件(光束變換元件)被設置於光路中，且偏光變換元件10f在旋轉角度為0度的狀態(基準狀態)，在被設置於照明光路中的情形下以2極狀的二次光源36(36A)示之。於此，通過二次光源36(36A)的光束被設定為縱方向偏光方向。14A, in place of the diffractive optical element 5, a diffractive optical element (beam converting element) which forms a 2-pole light intensity distribution in the far field (or the Fraunhofer diffraction area) is disposed in the optical path, and the polarization conversion element 10f The state in which the rotation angle is 0 degrees (reference state) is shown as a bipolar secondary light source 36 (36A) in the case where it is set in the illumination light path. Here, the light beam that has passed through the secondary light source 36 (36A) is set to the longitudinal direction of polarization.
圖14B，取代繞射光學元件5，在遠場(或是Fraunhofer繞射區域)形成4極狀的光強度分佈的繞射光學元件(光束變換元件)被設置於光路中，且偏光變換元件10f在旋轉角度為0度的狀態(基準狀態)，在被設置於照明光路中的情形下以4極狀的二次光源37示之。於此，通過二次光源37的光束被設定為周方向偏光方向。又，於圖14B，4極狀的光強度分佈侷限在紙面內上下(Z方向)以及左右方向(X方向)。14B, in place of the diffractive optical element 5, a diffractive optical element (beam converting element) which forms a quadrupole light intensity distribution in the far field (or the Fraunhofer diffraction area) is disposed in the optical path, and the polarization conversion element 10f In a state where the rotation angle is 0 degrees (reference state), in the case where it is set in the illumination light pathThe shape is shown in a quadrupole secondary light source 37. Here, the light beam that has passed through the secondary light source 37 is set to the circumferential direction polarization direction. Further, in Fig. 14B, the four-pole light intensity distribution is limited to the upper and lower sides (Z direction) and the left and right direction (X direction) in the plane of the paper.
於周方向偏光狀態，分別通過構成4極狀的二次光源37的4個圓形區域37A、37C的光束，由這4個圓形區域37A、37C結合成的圓的圓周方向，即是有與這4個圓形區域37A、37C結合成的圓的切線方向約一致的偏光方向的直線偏光狀態。又，於圖14B，雖然是以4極狀的二次光源37由4個圓形區域37A、37C所構成而示之，4個區域的形狀不限定為圓形。In the circumferentially polarized state, the light beams of the four circular regions 37A and 37C constituting the quadrupole secondary light source 37 are respectively combined in the circumferential direction of the circle formed by the four circular regions 37A and 37C. A linearly polarized state of a polarization direction in which the tangential directions of the circles formed by the four circular regions 37A and 37C are approximately the same. In addition, in FIG. 14B, the four-pole secondary light source 37 is represented by four circular regions 37A and 37C, and the shape of the four regions is not limited to a circular shape.
圖14C，取代圖14B的繞射光學元件，在遠場(或是Fraunhofer繞射區域)侷限紙面內+45度(-135度)方向及紙面內-45度(+135度)方向，形成4極狀的光強度分佈的繞射光學元件(光束變換元件)被設置於光路中，且偏光變換元件10f在旋轉角度為+45度的狀態(相對基準狀態，順時鐘旋轉45度的狀態)使旋轉而設置於照明光路中的情形下，以4極狀的二次光源38示之。Figure 14C, in place of the diffractive optical element of Figure 14B, in the far field (or Fraunhofer diffraction area) limited to +45 degrees (-135 degrees) in the paper and in the paper -45 degrees (+135 degrees) direction, forming 4 A diffractive optical element (beam conversion element) having a polar light intensity distribution is provided in the optical path, and the polarization conversion element 10f is in a state where the rotation angle is +45 degrees (a state of rotating 45 degrees clockwise with respect to the reference state) In the case where it is rotated and placed in the illumination light path, it is shown by a quadrupole secondary light source 38.
於圖14C，偏光狀態切換部4中的1/2波長板4b繞著光軸使旋轉，相對偏光變換元件10f，使有+45度(-135度方向)偏光方向的直線偏光入射。於此，因為基本元件10A有使入射的直線偏光的偏光方向僅旋轉180度±n×180度(n為整數)的機能，且基本元件10C有使入射直線偏光的偏光方向僅旋轉90度±n×180度(n為整數)的機能，通過4極狀的二次光源38的光束被設定為周方向偏光狀態。In FIG. 14C, the half-wavelength plate 4b in the polarization state switching portion 4 is rotated about the optical axis, and linearly polarized light having a polarization direction of +45 degrees (-135 degrees) is incident on the polarization conversion element 10f. Here, the basic element 10A has a function of rotating the polarization direction of the incident linearly polarized light by only 180 degrees ± n × 180 degrees (n is an integer), and the basic element 10C has a polarization direction of the incident linear polarization of only 90 degrees ± n × 180 degrees (n is an integer) function, through 4The light beam of the polar secondary light source 38 is set to a circumferentially polarized state.
於圖14C所示的周方向偏光狀態，分別通過構成4極狀的二次光源38的4個圓形區域38B、38D的光束，由這4個圓形區域38B、38D結合成的圓的圓周方向，即是有與這4個圓形區域38B、38D結合成的圓的切線方向約一致的偏光方向的直線偏光狀態。又，於圖14C，雖然是以4極狀的二次光源38由4個圓形區域38B、38D所構成的例子示之，4個區域的形狀不限定為圓形。In the circumferentially polarized state shown in Fig. 14C, the circumferences of the circles formed by the four circular regions 38B and 38D are respectively formed by the light beams of the four circular regions 38B and 38D constituting the quadrupole secondary light source 38. The direction is a linearly polarized state having a polarization direction that coincides with the tangential direction of the circle formed by the four circular regions 38B and 38D. Further, in FIG. 14C, the four-pole secondary light source 38 is illustrated by four circular regions 38B and 38D, and the shape of the four regions is not limited to a circular shape.
如此，利用偏光狀態切換部4的偏光方向的變更動作，與利用偏光切換元件10f的旋轉作用，雖然4極狀二次光源侷限在+45度(-135度)方向與-45度(+135度)方向，雖然4極狀二次光源侷限在0度(+180度)方向以及90度(270度)即是縱橫方向，雖然2極狀二次光源侷限在0度(+180度)方向或90度(270度)即是縱橫方向，也可以實現周方向偏光狀態。As described above, the change operation of the polarization direction of the polarization state switching unit 4 and the rotation action by the polarization switching element 10f are limited to the +45 degree (-135 degree) direction and the -45 degree (+135). Degree), although the 4-pole secondary source is limited to 0 degrees (+180 degrees) and 90 degrees (270 degrees) is the vertical and horizontal directions, although the 2-pole secondary source is limited to 0 degrees (+180 degrees) Or 90 degrees (270 degrees) is the vertical and horizontal directions, and the circumferential direction of polarization can also be achieved.
又，以光軸AX做為中心在圓周方向被等分割而由8個扇形狀的基本元件構成的偏光變換元件，也可以繞著光軸AX旋轉。如圖15A所示，例如由8分割的基本元件所構成的偏光變換元件(例如偏光變換元件10a)，如果繞著光軸AX使僅旋轉+45度，分別通過構成8極狀二次光源39的8個圓形區域39A~39D的光束，具有相對此8個圓形區域39A~39D結成的圓的圓周方向(8個圓形區域39A~39D結成的圓的切線方向)使僅旋轉-45度的偏光方向的直線偏光狀態。Further, the polarization conversion element which is equally divided in the circumferential direction around the optical axis AX and is composed of eight fan-shaped basic elements may be rotated around the optical axis AX. As shown in FIG. 15A, for example, a polarization conversion element (for example, a polarization conversion element 10a) composed of eight basic elements is rotated by +45 degrees around the optical axis AX, and constitutes an 8-pole secondary light source 39, respectively. The light beams of the eight circular regions 39A to 39D have a circumferential direction of a circle formed by the eight circular regions 39A to 39D (the tangential direction of a circle formed by the eight circular regions 39A to 39D) so that only the rotation -45 The linear polarization state of the polarization direction of the degree.
又，如圖15B所示，分別通過構成8極狀二次光源的8個圓形區域的光束，在有相對此8個圓形區域結合成的圓的圓周方向(8個圓形區域結合成的圓的切線方向)，長軸方向被僅旋轉+45度的偏光方向的橢圓偏光的情形，如圖15A所示的偏光變換元件(例如偏光變換元件10a)，利用繞著光軸AX使僅旋轉+45度，如圖15C所示，可以得到約周方向偏光狀態。Further, as shown in Fig. 15B, the light beams of the eight circular regions constituting the eight-pole secondary light source are respectively combined in a circumferential direction of a circle formed by the eight circular regions (eight circular regions are combined In the case where the long-axis direction is elliptically polarized by a polarization direction of only +45 degrees, the polarization conversion element (for example, the polarization conversion element 10a) shown in FIG. 15A is used only around the optical axis AX. When the rotation is +45 degrees, as shown in Fig. 15C, a state in which the circumferential direction is polarized can be obtained.
圖16繪示偏光變換元件被配置在照明光學系統的瞳附近位置內、圓錐柱狀鏡系統8的正前面位置(入射側附近位置)為例的示意圖。於圖16之例，利用伸縮透鏡系統9的倍數變化作用，被投影到微複眼透鏡11的入射面中央區域10E的像的大小，與被投影到微複眼透鏡11的入射面的各基本元件10A~10D的像的大小會被變更，藉由圓錐柱狀鏡系統8的動作，被投影到微複眼透鏡11的入射面的各基本元件10A~10D的像，以光軸AX為中心的半徑方向的幅度被變更。16 is a schematic view showing an example in which the polarization conversion element is disposed in the vicinity of the pupil of the illumination optical system, and the front position (the position near the incident side) of the conical prism system 8 is taken as an example. In the example of Fig. 16, the size of the image projected onto the incident surface central region 10E of the micro fly's eye lens 11 by the multiple change action of the telescopic lens system 9 and the basic elements 10A projected onto the incident surface of the micro fly's eye lens 11 are used. The size of the image of ~10D is changed, and the image of each of the basic elements 10A to 10D projected onto the incident surface of the micro-antificate lens 11 by the operation of the conical cylindrical mirror system 8 is in the radial direction centered on the optical axis AX. The magnitude of the change was changed.
因此，有如圖16所示變形例的中央區域10E(或是偏光消解部材104c)的偏光變換元件，比起有變換倍率作用的光學系統(伸縮透鏡9)而設置在光源側的情形，考慮中央區域10E佔據區域利用伸縮透鏡9的變換倍率而被變更，也可以決定中央區域10E的大小。Therefore, the polarization conversion element of the central region 10E (or the polarization-eliminating member 104c) of the modification shown in FIG. 16 is provided on the light source side compared to the optical system (the telescopic lens 9) having the conversion magnification function, and the center is considered. The area 10E occupied area is changed by the conversion magnification of the telescopic lens 9, and the size of the central area 10E may be determined.
又，如圖16所示的變形例，在有中央區域10E(或是偏光消解部材104c)的偏光變換元件，比起有變更輪帶比作用的光學系統(圓錐柱狀鏡系統8)而設置在光源側的情形，如圖17所示，較佳滿足以下條件(1)與條件(2)的至少其一。Further, in the modification shown in Fig. 16, the polarization conversion element having the central region 10E (or the polarization-dissolving member 104c) is provided in comparison with the optical system (the conical cylindrical mirror system 8) that changes the ratio of the belts. On the side of the light sourceThe shape, as shown in Fig. 17, preferably satisfies at least one of the following conditions (1) and (2).
(1) (10in+△A)/10out<0.75(1) (10in+△A)/10out<0.75
(2) 0.4<(10in+△A)/10out.(2) 0.4<(10in+△A)/10out.
其中，10in：偏光變換元件10的中央區域10E的有效半徑，10out：偏光變換元件10的外側有效半徑，△A：通過有變更輪帶比作用的光學系統的光束的內側半徑的增加部份。Here, 10 in: effective radius of the central region 10E of the polarization conversion element 10, 10out: outer effective radius of the polarization conversion element 10, ΔA: an increase portion of the inner radius of the light beam of the optical system having the change of the wheel ratio.
於此，不滿足條件(1)的情形，藉由偏光變換元件10使周方向偏光狀態被變換的輪帶狀的區域狹窄，因為不能達成小輪帶比的輪帶狀或多極狀二次光源造成的周方向偏光照明而不好。又，不滿足條件(2)的情形，可以通過偏光變換元件10的中央區域的光束的直徑明顯變小，例如當該偏光變換元件10不會從照明光路外移，偏光狀態不變，因為不能有小σ照明而不好。Here, in the case where the condition (1) is not satisfied, the band-shaped region in which the circumferential direction polarization state is changed is narrowed by the polarization conversion element 10, because the wheel-shaped or multi-pole secondary of the small wheel ratio cannot be achieved. The circumferential direction polarized illumination caused by the light source is not good. Further, in the case where the condition (2) is not satisfied, the diameter of the light beam which can pass through the central region of the polarization conversion element 10 is remarkably small, for example, when the polarization conversion element 10 does not move outward from the illumination light path, the polarization state does not change because There is a small σ illumination and not good.
又，如圖18所示，偏光變換元件被配置在照明光學系統的瞳附近位置中，比起微複眼透鏡11是在罩幕側的位置，具體地，也可以設置在將罩幕遮板14的像投影到罩幕上的成像光學系統15的瞳附近位置。在圖16與圖18所示的實施例，與圖9到圖11的實施例相同，也可以有多個能交換的偏光變換元件。Further, as shown in FIG. 18, the polarization conversion element is disposed in the vicinity of the pupil of the illumination optical system, and is located on the mask side as compared with the micro-eye-eye lens 11, and specifically, may be disposed on the mask shutter 14. The image is projected onto the vicinity of the pupil of the imaging optical system 15 on the mask. In the embodiment shown in Figs. 16 and 18, as in the embodiment of Figs. 9 to 11, a plurality of exchangeable polarization conversion elements may be provided.
又，在上述實施例，比起偏光變換元件10，晶圓W側的光學系統(照明光學系統與投影光學系統)有偏光像差(延遲)的情形時，由於偏光像差，偏光方向會變化。於此情形，在考慮此光學系統的偏光像差的影響上，利用偏光變換元件10，較佳可以設定被旋轉的偏光面的方向。又，利用偏光變換元件10，在晶圓W側的光路中被配置反射部材的情形，被此反射部材反射在每個偏光方向產生相位差。此時，考慮由反射面的偏光特性引起的光束相位差，利用偏光變換元件10也可以設定被旋轉的偏光面的方向。Further, in the above-described embodiment, when the optical system (illumination optical system and projection optical system) on the wafer W side has polarization aberration (delay) as compared with the polarization conversion element 10, the polarization direction changes due to the polarization aberration. . In this case, in consideration of the influence of the polarization aberration of the optical system, it is preferable to set the direction of the rotated polarizing surface by the polarization conversion element 10. Further, in the case where the reflective member is disposed in the optical path on the wafer W side by the polarization conversion element 10, a phase difference is generated in each of the polarization directions by the reflection member. At this time, in consideration of the beam phase difference caused by the polarization characteristics of the reflecting surface, the direction of the rotated polarizing surface can be set by the polarization converting element 10.
接著，說明偏光狀態的評量方法的實施例。於本實施例，保持做為感光性基板的晶圓W的晶圓平台(基板平台)的側方，使用可以進出的晶圓面偏光監視器90，檢測出到達做為感光性基板的晶圓W的光束的偏光狀態。又，晶圓面偏光監視器90，也可以被設置在晶圓平台內，且也可以將該晶圓平台設置在別的計測平台上。Next, an embodiment of the evaluation method of the polarization state will be described. In the present embodiment, the side of the wafer platform (substrate stage) of the wafer W as the photosensitive substrate is held, and the wafer surface polarized light monitor 90 that can be moved in and out is used to detect the wafer reaching the photosensitive substrate. The polarization state of the beam of W. Moreover, the wafer surface polarized light monitor 90 may be disposed in the wafer platform, and the wafer platform may be disposed on another measurement platform.
圖19繪示為了檢出照明晶圓W的光的偏光狀態以及光強度的晶圓面偏光監視器90的結構示意圖。如圖19所示，晶圓面偏光監視器90，包括可以定位於晶圓W的位置或其附近的針孔部材91。通過針孔部材91的針孔91a的光，穿過被配置在投影光學系統PL的像面位置或其附近，如前側焦點位置的對準透鏡92(collimated lens)而成為約平行的光束，並在被反射鏡93反射後，入射於中繼透鏡系統94(relay lens)。穿過中繼透鏡系統94的約平行光束，穿過做為相位移動元件的1/4波長板95與做為偏光元件的偏光分光器96後，到達二維CCD 97(Charge Coupled Device，電荷耦合元件)的檢測面97a。於此，二維CCD 97的檢測面97a與投影光學系統PL的射出瞳大致光學共軛，進而與照明光學裝置的照明瞳面大致光學共軛。FIG. 19 is a view showing the configuration of the wafer surface polarized light monitor 90 for detecting the polarization state of the light of the illumination wafer W and the light intensity. As shown in FIG. 19, the wafer surface polarized light monitor 90 includes a pinhole member 91 that can be positioned at or near the position of the wafer W. The light passing through the pinhole 91a of the pinhole member 91 passes through a collimated lens disposed at or near the image plane position of the projection optical system PL, such as a collimated lens at the front focus position, and becomes a substantially parallel light beam, and After being reflected by the mirror 93, it is incident on a relay lens system 94 (relay lens). An approximately parallel beam passing through the relay lens system 94 passes through the quarter-wave plate 95 as a phase shifting element and acts as a polarizerAfter the polarizing beam splitter 96 of the device, it reaches the detecting surface 97a of the two-dimensional CCD 97 (Charge Coupled Device). Here, the detection surface 97a of the two-dimensional CCD 97 is substantially optically conjugate with the emission pupil of the projection optical system PL, and is substantially optically conjugate with the illumination pupil of the illumination optical device.
1/4波長板95，被構成能以光軸做為中心旋轉，對於此1/4波長板95，被連接到為了被設定成以光軸做為中心旋轉的設定部98。如此，對晶圓W的照明光的偏光度不是0的情形，藉由設定部98使1/4波長板95繞著光軸旋轉，而變化在二維CCD 97的檢測面97a光強度分佈。因此，對於晶圓面偏光監視器90，一面使用設定部98而使1/4波長板95繞著光軸使旋轉，而一面檢測出在檢測面97a光強度分佈的變化，且從此檢測結果到利用旋轉相位移動元件的方法，可以測定照明光的偏光狀態。The quarter-wavelength plate 95 is configured to be rotatable about the optical axis, and the quarter-wavelength plate 95 is connected to the setting portion 98 that is set to rotate about the optical axis. As described above, when the degree of polarization of the illumination light of the wafer W is not zero, the setting unit 98 rotates the quarter-wavelength plate 95 around the optical axis to change the light intensity distribution on the detection surface 97a of the two-dimensional CCD 97. Therefore, with respect to the wafer surface polarization monitor 90, the quarter-wavelength plate 95 is rotated about the optical axis by using the setting unit 98, and the change in the light intensity distribution on the detection surface 97a is detected, and the detection result is The polarization state of the illumination light can be measured by the method of rotating the phase shifting element.
又，旋轉相位移動元件的方法，例如鶴田所描述的「光鉛筆-給光技術者的應用光學」，如株式會社新技術通訊(communications)的詳細記載。實際上，針孔部材91(進而針孔91a)沿著晶圓面使二維移動，在晶圓面的多個位置測定照明光的偏光狀態。此時，對於晶圓面偏光監視器90，因為檢測出在二維檢測面97a的光強度分佈的變化，根據此檢測出的分佈資料，在照明光的瞳內可以測定偏光狀態的分佈。Further, a method of rotating the phase shifting element is, for example, a "light pencil - application optics of a light-transmitting technician" described by Tsuruta, such as a detailed description of a new technology communication. Actually, the pinhole member 91 (and further the pinhole 91a) is moved two-dimensionally along the wafer surface, and the polarization state of the illumination light is measured at a plurality of positions on the wafer surface. At this time, in the wafer surface polarization monitor 90, since the change in the light intensity distribution on the two-dimensional detection surface 97a is detected, the distribution of the polarization state can be measured in the pupil of the illumination light based on the detected distribution data.
又，對於晶圓面偏光監視器90，做為相位移動元件的1/4波長板95可以取代使用1/2波長板。使用相位移動元件，偏光狀態即是用於測定4個Stokes參數，變化沿著相位動元件與偏光元件(偏光分光器96)的光軸的相對角度，同時使相位移件或偏光元件從光路退開，依需要在至少4個相異狀態檢測出在檢測面97a的光強度分佈變化。又，於本實施例，雖然做為相位移動元件的1/4波長板95繞著光軸旋轉，也可以使做為偏光元件的偏光分光器96繞著光軸旋轉，也可以使相位移動元件與偏光元件二者繞著光軸旋轉。又，取代這些操作或是增加這些操作的，也可以使做為相位移動元件的1/4波長板95與做為偏光元件的偏光分光器96之其一或二者從光路中插脫。Further, as for the wafer surface polarization monitor 90, the 1⁄4 wavelength plate 95 as the phase shifting element can be used instead of the 1⁄2 wavelength plate. Using a phase shifting element, the polarized state is used to determine four Stokes parameters, along the phaseThe relative angle between the positional element and the optical axis of the polarizing element (polarizing beam splitter 96) simultaneously causes the phase shifting member or the polarizing element to be retracted from the optical path, and the light intensity at the detecting surface 97a is detected in at least four different states as needed. Distribution changes. Further, in the present embodiment, although the quarter-wavelength plate 95 as the phase shifting element is rotated about the optical axis, the polarization beam splitter 96 as the polarizing element can be rotated about the optical axis, and the phase shifting element can also be made. Both the polarizing element rotates about the optical axis. Further, instead of or in addition to these operations, one or both of the 1⁄4 wavelength plate 95 as the phase shifting element and the polarization beam splitter 96 as the polarizing element may be inserted and removed from the optical path.
又，對於晶圓面偏光監視器90，利用反射鏡93的偏光特性，是變化光的偏光狀態。於此情形，因為預先知道的反射鏡93的偏光特性，根據利用所需要的計算所得到對反射鏡93的偏光特性的偏光狀態的影響，補正晶圓面偏光監視器90的測定結果，可且正確地測定照明光的偏光狀態。又，不限於反射鏡，藉由變化由透鏡等的其他光學部件引起偏光狀態的情形以相同地補正測定結果，可以正確地測定照明光的偏光狀態。Further, with respect to the wafer surface polarization monitor 90, the polarization characteristic of the mirror 93 is a polarization state of the changed light. In this case, the polarization characteristic of the mirror 93 that is known in advance is corrected by the influence of the polarization state of the polarization characteristic of the mirror 93 obtained by the calculation required, and the measurement result of the wafer surface polarization monitor 90 is corrected. The polarization state of the illumination light is correctly measured. Further, the polarization state of the illumination light can be accurately measured by correcting the measurement result in the same manner by changing the measurement result by changing the polarization state caused by other optical members such as lenses, without being limited to the mirror.
以下，具體說明關於在照明光的瞳內的偏光狀態分佈的評量。首先，通過在瞳上的一點(或是微小區域)，而到達像面上的一點(微小區域)的光線，一個一個算出對應的特定偏光度DSP。又，在以下說明，使用圖1、圖16、圖18的XYZ座標系統。上述瞳上的一點(微小區域)對應二維CCD97的一畫素，且像面上的一點(微小區域)對應針孔91a的XY座標系統。Hereinafter, the evaluation of the polarization state distribution in the ridge of the illumination light will be specifically described. First, by reaching a point (small area) on the image surface, a point (small area) on the image plane is used to calculate the corresponding specific polarization degree DSP one by one. Further, in the following description, the XYZ coordinate system of Figs. 1, 16, and 18 is used. A point (micro area) on the above-mentioned cymbal corresponds to one pixel of the two-dimensional CCD 97, and a point (micro area) on the image surface corresponds to the XY coordinate system of the pinhole 91a.
此特定偏光度DSP，當在通過在瞳上的一點(或是微小區域)，而到達像面上的一點(微小區域)的特定光線的X方向偏光成分(在瞳上X方向的振動方向的偏光)的強度為Ix，該特定光線的Y方向偏光成分(在瞳上Y方向的振動方向的偏光)的強度為Iy時，(3) DSP=(Ix-Iy)/(Ix+Iy)。又，此特定偏光度DSP，對應全部強度S0的水平直線偏光強度減去垂直直線偏光強度S1，與(S1/S0)相同。The specific polarization degree DSP, when passing through a point (or a small area) on the pupil, reaches the X-direction polarization component of a specific ray of a point (micro area) on the image plane (the direction of vibration in the X direction on the 瞳The intensity of the polarized light is Ix, and when the intensity of the Y-direction polarizing component of the specific light (the polarized light in the Y direction in the Y direction) is Iy, (3) DSP = (Ix - Iy) / (Ix + Iy). Further, the specific polarization degree DSP is equal to (S1 /S0 ) in that the horizontal linear polarization intensity of all the intensityes S0 is subtracted from the vertical linear polarization intensity S1 .
又，由通過在瞳上的一點(或是微小區域)，而到達像面上的一點(微小區域)的特定光線的X方向偏光成分(在瞳上X方向的振動方向的偏光)的強度為Ix，以及該特定光線的Y方向偏光成分(在瞳上Y方向的振動方向的偏光)的強度為Iy，通過下式(4)、(5)，可以定義於水平偏光(對應在圖案面內水平方向延伸的罩幕圖案的繞射光成為S偏光的偏光)的特定偏光率RSPh、與垂直偏光(對應在圖案面內垂直方向延伸的罩幕圖案的繞射光成為S偏光的偏光)的特定偏光率RSPv。Further, the intensity of the X-direction polarizing component (the polarized light in the X-direction vibration direction) of the specific light reaching a point (micro area) on the image surface by a point (or a small area) on the image is Ix, and the intensity of the Y-direction polarization component of the specific light (the polarization of the vibration direction in the Y direction on the 瞳) is Iy, and can be defined as horizontally polarized light by the following formulas (4) and (5) (corresponding to the pattern plane) The specific polarization ratio RSPh of the diffracted light of the mask pattern extending in the horizontal direction is the polarization of the S-polarized light, and the specific polarization (the polarized light of the mask pattern corresponding to the vertical direction in the pattern plane becomes the polarized light of the S-polarized light) Polarizing rate RSPv .
(4) RSPh=Ix/(Ix+Iy)，(5) RSPv=Iy/(Ix+Iy)，其中，當理想的非偏光照明時RSPh，RSPv二者為50%，當理想的水平偏光時RSPh為100%，當理想的垂直偏光時RSPv為100%。(4) RSPh =Ix/(Ix+Iy), (5) RSPv =Iy/(Ix+Iy), where RSPh and RSPv are both 50% when ideal non-polarized illumination, ideal when horizontal polarization RSPh of 100%, when the vertical polarization RSPv preferably 100%.
又，對應通過在瞳上的一點(或是微小區域)而到達像面上的一點(微小區域)的光線的一個一個，當用以下式(6)~(9)定義偏光度V時，對應通過所要的有效光源區域而到達像面上的一點(微小區域)的光束，可以用下式(10)定義平均偏光度V(Ave)。Further, corresponding to one of the rays passing through a point (small area) on the image plane by a point (or a minute area) on the image plane, when the degree of polarization V is defined by the following equations (6) to (9), The average polarization degree V(Ave) can be defined by the following equation (10) by reaching the light beam of a point (micro area) on the image plane by the desired effective light source region.
(6) V=(S12+S22+S32)1/2/S0=(S1’2+S2’2+S3’2)1/2(6) V=(S12 +S22 +S32 )1/2 /S0 =(S1 '2 +S2 '2 +S3 '2 )1/2
(7) S1’=S1/S0(7) S1 '=S1 /S0
(8) S2’=S2/S0(8) S2 '=S2 /S0
(9) S3’=S3/S0其中S0為全部強度，S1為水平直線偏光強度減去垂直直線偏光強度，S2為45度直線偏光強度減去135度直線偏光強度，S3為右旋圓偏光強度減去左旋圓偏光強度。(9) S3 '=S3 /S0 where S0 is the total intensity, S1 is the horizontal linear polarization intensity minus the vertical linear polarization intensity, and S2 is the 45 degree linear polarization intensity minus the 135 degree linear polarization intensity, S3 is the right circular polarization intensity minus the left circular polarization intensity.
(10) V(Ave)=Σ[S0(xi，yi)‧V(xi，yi)]/ΣS0(xi，yi)。(10) V(Ave)=Σ[S0 (xi , yi )‧V(xi , yi )]/ΣS0 (xi , yi ).
又，於式(10)，S0(xi，yi)是對應通過所要的有效光源區域(xi，yi)上的一點(或是微小區域)而到達像面上的一點(微小區域)的光線的全部強度S0，V(xi，yi)是對應通過所要的有效光源區域(xi，yi)上的一點(或是微小區域)而到達像面上的一點(微小區域)的光線的偏光度。Further, in the equation (10), S0 (xi , yi ) is a point corresponding to a point (or a minute region) passing through the desired effective light source region (xi , yi ) to the image plane (small The total intensity S0 , V(xi , yi ) of the light of the region is a point corresponding to a point (or a small region) passing through the desired effective light source region (xi , yi ) to the image surface ( The polarization of the light in the tiny area).
又，對應通過所要的有效光源區域而到達像面上的一點(微小區域)的光線，用下式(11)可以定義關於水平偏光的平均特定偏光率RSPh(Ave)，用下式(12)可以定義關於垂直偏光的平均特定偏光率RSPv(Ave)。Further, the average specific polarization ratio RSPh (Ave) with respect to the horizontally polarized light can be defined by the following equation (11) corresponding to the light reaching a point (micro area) on the image plane through the desired effective light source region, using the following formula (12) ) The average specific polarization rate RSPv (Ave) with respect to vertical polarization can be defined.
(11) RSPh(Ave)=Ix(Ave)/(Ix+Iy)Ave=Σ[S0(xi，yi)‧RSPh(xi，yi)]/ΣS0(xi，yi)，(12) RSPV(Ave)=Iy(Ave)/(Ix+Iy)Ave=Σ[S0(xi，yi)‧RSPv(xi，yi)]/ΣS0(xi，yi)，其中Ix(Ave)是通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光線在X方向偏光成分(在瞳上X方向的振動方向的偏光)的強度平均，Iy(Ave)是通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光線在Y方向偏光成分(在瞳上Y方向的振動方向的偏光)的強度平均，RSPh(xi，yi)是通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光線的在水平偏光的特定偏光率，RSPv(xi，yi)是通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光線的在垂直偏光的特定偏光率。又，(Ix+Iy)Ave是通過所定的有效光源區域的全部光束的強度平均。(11) RSPh (Ave)=Ix(Ave)/(Ix+Iy)Ave=Σ[S0 (xi ,yi )‧RSPh (xi ,yi )]/ΣS0 (xi , yi ), (12) RSPV (Ave)=Iy(Ave)/(Ix+Iy)Ave=Σ[S0 (xi ,yi )‧RSPv (xi ,yi )]/ΣS0 (xi , yi ), where Ix(Ave) is a polarized component in the X direction of the light reaching a point (small area) on the image plane through the determined effective light source region (xi , yi ) (on the X The intensity of the polarization in the direction of the vibration direction is average, and Iy(Ave) is the polarization component in the Y direction of the light reaching the point (small area) on the image surface by the predetermined effective light source region (xi , yi ) (in the 瞳The intensity average of the polarization of the vibration direction in the Y direction, RSPh (xi , yi ) is the light reaching a point (small area) on the image plane through the predetermined effective light source region (xi , yi ) At a specific polarizing rate of horizontally polarized light, RSPv (xi , yi ) is a specific polarization of the light that reaches a point (micro area) on the image plane through the determined effective light source region (xi , yi ) Polarization rate. Further, (Ix + Iy) Ave is the intensity average of all the light beams passing through the predetermined effective light source region.
於此，當理想的非偏光照明時RSPh(xi，yi)，RSPv(xi，yi)二者為50%，當理想的水平偏光時RSPh(xi，yi)為100%，當理想的垂直偏光時RSPv(xi，yi)為100%。Here, when ideal non-polarized illumination, RSPh (xi , yi ), RSPv (xi , yi ) are both 50%, and when ideal horizontal polarization is, RSPh (xi , yi ) At 100%, RSPv (xi , yi ) is 100% when ideal for vertical polarization.
接著，對應通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光束，可以用下式(13)定義平均特定偏光度DSP(Ave)。Next, the average specific polarization degree DSP (Ave) can be defined by the following equation (13) corresponding to the light beam reaching a point (micro area) on the image plane by the predetermined effective light source region (xi , yi ).
(13) DSP(Ave)=(Ix-Iy)Ave/(Ix+Iy)Ave={Σ[Ix(xi，yi)-Iy(xi，yi)]/Σ[Ix(xi，yi)+Iy(xi，yi)]}=S1’(Ave)={ΣS1/ΣS0}於此，(Ix-Iy)Ave是通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光束在X方向偏光成分的強度與平均通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光束在Y方向偏光成分的強度的相差的平均，Ix(xi，yi)是通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光束在X方向偏光成分的強度，Iy(xi，yi)是通過所定的有效光源區域(xi，yi)而到達像面上的一點(微小區域)的光束在Y方向偏光成分的強度，S1’(AVe)是在所定的有效光源區域(xi，yi)的S1’成分的平均。(13) DSP(Ave)=(Ix-Iy)Ave/(Ix+Iy)Ave={Σ[Ix(xi ,yi )-Iy(xi ,yi )]/Σ[Ix(xi , yi )+Iy(xi , yi )]}=S1 '(Ave)={ΣS1 /ΣS0 } Here, (Ix−Iy)Ave is a predetermined effective light source region (xi , yi ) the intensity of the polarized component in the X direction of the light beam reaching the point (micro area) on the image plane and the average passing through the predetermined effective light source region (xi , yi ) to a point (micro area) on the image plane The average of the phase differences of the intensities of the beams in the Y direction, Ix(xi , yi ) is a point (small area) of the light beam passing through the determined effective source region (xi , yi ) on the image plane. The intensity of the direction polarization component, Iy(xi , yi ) is the intensity of the polarization component of the light beam reaching the point (small area) on the image surface by the predetermined effective light source region (xi , yi ), S1 '(AVe) is the average of the S1 ' components in the determined effective source region (xi , yi ).
於式(13)，當理想的非偏光照明時DSP(Ave)為0，當理想的水平偏光時DSP(Ave)為1，當理想的垂直偏光時DSP(Ave)為-1。In equation (13), DSP (Ave) is 0 when ideal non-polar illumination, DSP (Ave) is 1 when ideal horizontal polarization, and DSP (Ave) is -1 when ideal vertical polarization is used.
現在，本實施例的照明光學裝置，進而曝光裝置，在所定的有效光源區域(xi，yi)的平均特定偏光率RSPh(Ave)，RSPv(Ave)滿足RSPh(Ave)>70%，RSPv(Ave)>70%，可看到在所定的有效光源區域內是直線偏光。於此，當平均特定偏光率RSPh(Ave)，RSPv(Ave)不滿足上式條件的情形，在周方向偏光輪帶照明，或是周方向偏光四極照明、周方向偏光二極照明等，在所定方向有偏光面因為不是所希望的直線偏光狀態，對於有特定指向(pitch)方向的線寬度的細圖案不能向上提升成像能力。Now, the illumination optical device of the present embodiment, and further the exposure device, satisfies RSPh (Ave) at an average specific polarization ratio RSPh (Ave), RSPv (Ave) of the determined effective light source region (xi , yi ). 70%, RSPv (Ave) > 70%, can be seen in the specified effective light source area is linear polarized light. Here, when the average specific polarization ratio RSPh (Ave), RSPv (Ave) does not satisfy the above condition, the polarized wheel illumination in the circumferential direction, or the circumferential polarization quadrupole illumination, the circumferential polarization bipolar illumination, etc. A polarizing surface in a predetermined direction is not a desired linearly polarized state, and a fine pattern having a line width in a specific pitch direction cannot raise the imaging ability upward.
又，如圖13所示，使用4分割偏光變換元件10進行4分割周方向偏光輪帶照明的情形，如圖20所示，輪帶形狀的二次光源31為4分割，也可以對每一個分割區域31A1、31A2、31C1、31C2的平均特定偏光率RSPh(Ave)，RSPv(Ave)進行評量。Further, as shown in FIG. 13, when the four-divided polarization conversion element 10 is used to illuminate the four-division circumferential direction polarization belt, as shown in FIG. 20, the secondary light source 31 of the belt shape is divided into four, and each of them may be used. The average specific polarization ratios RSPh (Ave) and RSPv (Ave) of the divided regions 31A1, 31A2, 31C1, and 31C2 are evaluated.
對於上述實施例的曝光裝置，藉由照明光學裝置以照明罩幕(十字標記)(照明步驟)，藉由使用投影光學系統將被形成於罩幕轉印用的圖案在感光性基板曝光(曝光步驟)，可以製造微元件(半導體元件、拍攝元件、液晶顯示元件、薄膜電磁頭等)。以下，使用上述實施例的曝光裝置，以在做為感光性基板的晶圓等形成電路圖案，而得到做為微元件的半導體元件的實際方法為例，參照圖21的流程圖做說明。With the exposure apparatus of the above embodiment, the illumination mask is illuminated by the illumination mask (cross mark) (illumination step), and the pattern formed by the mask transfer is exposed on the photosensitive substrate by using the projection optical system (exposure) Step), it is possible to manufacture a micro component (a semiconductor element, an imaging element, a liquid crystal display element, a thin film electromagnetic head, etc.). In the following, an actual method of forming a circuit pattern on a wafer or the like as a photosensitive substrate to obtain a semiconductor element as a micro device will be described with reference to a flowchart of FIG. 21, using the exposure apparatus of the above-described embodiment.
首先，於圖21的步驟301，在一批次的晶圓上蒸鍍金屬膜。於下一步驟302，在這些一批次的晶圓上的金屬膜上塗佈光阻。之後，於步驟303，使用上述實施例的曝光裝置，罩幕上的圖案的像穿過投影光學系統，在這一批次的晶圓上的每個拍攝區域，順次被曝光轉印。之後，於步驟304，進行這一批次的晶圓上的光阻顯影後，於步驟305，藉由在這一批次的晶圓上的光阻圖案做為罩幕，進行蝕刻，因此，對應罩幕上圖案的電路圖案，被形成於每個晶圓的每個拍攝區域。之後，藉由進行更上層的電路圖案的形成等，使半導體元件等的元件被製造。根據上述半導體元件等的製造方法，有極微細電路圖案的半導體元件可以有良好的產能。First, in step 301 of FIG. 21, a metal film is deposited on a batch of wafers. In the next step 302, the metal film on these batches of wafersApply photoresist to the top. Thereafter, in step 303, using the exposure apparatus of the above embodiment, the image of the pattern on the mask passes through the projection optical system, and is sequentially exposed and transferred in each of the shot regions on the batch of wafers. Thereafter, in step 304, after performing photoresist development on the wafer of the batch, in step 305, etching is performed by using a photoresist pattern on the batch of wafers as a mask. A circuit pattern corresponding to the pattern on the mask is formed in each of the shot regions of each wafer. After that, an element such as a semiconductor element is manufactured by forming a higher-level circuit pattern or the like. According to the above-described method of manufacturing a semiconductor element or the like, a semiconductor element having a very fine circuit pattern can have a good productivity.
又，對於上述實施例的曝光裝置，利用在平板(玻璃基板)上，形成所定的圖案(電路圖案、電極圖案等)，可以得到做為微元件的液晶顯示元件。以下，參照圖22的流程圖做為一例說明。在圖22，於圖案形成步驟401，使用上述實施例的曝光裝置，在感光性基板(被塗佈有光阻的玻璃基板等)轉印曝光罩幕的圖案，所謂的微影製程被進行。利用此微影製程步驟，在感光性基板上，含有多個電極等所定的圖案被形成。之後，被曝光的基板，利用經過顯影步驟，蝕刻步驟，移除光阻步驟等的各步驟，基板上所定的圖案被形成，接著進行彩色濾光器形成步驟402。Further, in the exposure apparatus of the above-described embodiment, a predetermined pattern (a circuit pattern, an electrode pattern, or the like) is formed on a flat plate (glass substrate), whereby a liquid crystal display element as a micro element can be obtained. Hereinafter, the flowchart of Fig. 22 will be described as an example. In Fig. 22, in the pattern forming step 401, a pattern of an exposure mask is transferred on a photosensitive substrate (a glass substrate coated with a photoresist, etc.) using the exposure apparatus of the above-described embodiment, and a so-called lithography process is performed. In the lithography process, a pattern including a plurality of electrodes or the like is formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to respective steps of a developing step, an etching step, a photoresist removal step, and the like, and a predetermined pattern on the substrate is formed, followed by a color filter forming step 402.
對於彩色濾光器形成步驟402，對應紅、綠、藍3個點為一組，被形成矩陣狀的多條配列，或是紅、綠、藍的3條的濾光器為一組配列成多個水平掃描線方向，而形成彩色濾光器。接著，在彩色濾光器形成步驟402之後，單元組合步驟403被進行。於單元組合步驟403，組裝有由圖案形成步驟401所得到的所定圖案的基板，以及使用由彩色濾光器形成步驟402所得到的彩色濾光器等，而得到液晶面板(液晶單元)。For the color filter forming step 402, three points corresponding to red, green, and blue are grouped, and a plurality of arrays arranged in a matrix shape, or three filters of red, green, and blue are arranged in a group. A plurality of horizontal scanning line directions form a color filter. Next, after the color filter forming step 402,The unit combination step 403 is performed. In the cell combination step 403, a substrate having a predetermined pattern obtained by the pattern forming step 401 is assembled, and a color filter or the like obtained by the color filter forming step 402 is used to obtain a liquid crystal panel (liquid crystal cell).
單元組合步驟403，例如，在由圖案形成步驟401所得到的所定圖案的基板，以及使用由彩色濾光器形成步驟402所得到的彩色濾光器之間，注入液晶，而製造液晶面板(液晶單元)。之後，於模組的組合步驟404，進行被組合的液晶面板(液晶單元)的顯示動作的電路，背光模組等的各部件安裝，使完成做為液晶顯示元件。根據上述液晶顯示元件的製造方法，可以得到有極微細電路圖案的液晶顯示件，並使其有良好產能。The unit combining step 403, for example, injecting liquid crystal between the substrate of the predetermined pattern obtained by the pattern forming step 401 and the color filter obtained by the color filter forming step 402, to manufacture a liquid crystal panel (liquid crystal) unit). Thereafter, in the module combination step 404, a circuit for displaying the liquid crystal panel (liquid crystal cell) to be combined is mounted, and each member such as a backlight module is mounted so as to be completed as a liquid crystal display element. According to the method for producing a liquid crystal display device described above, a liquid crystal display device having an extremely fine circuit pattern can be obtained and has a good productivity.
又，對於上述實施例，做為曝光的光，雖然使用KrF準分子雷射光(波長248nm)或是ArF準分子雷射光(波長193nm)，但不限定於此，其他適合的光源，例如供給波長157nm的雷射光的F2雷射光源等，也可以適用本發明。再者，對於上述實施例，包括照明光學裝置的曝光裝置為例做說明，但是為了照明罩幕或晶圓以外的被照射面的一般照明光學裝置，可知地，也可以使用本發明。Further, in the above embodiment, although KrF excimer laser light (wavelength 248 nm) or ArF excimer laser light (wavelength 193 nm) is used as the light to be exposed, it is not limited thereto, and other suitable light sources such as a supply wavelength. The present invention is also applicable to an F2 laser light source of 157 nm laser light or the like. Further, in the above embodiment, an exposure apparatus including an illumination optical device will be described as an example. However, it is also known that the present invention can be used to illuminate a general illumination optical device of an illuminated surface other than a mask or a wafer.
又，於上述實施例，投影光學系統與感光性基板之間的光路中，也可以使用填滿有折射率大於等於1.1的媒介物(典型的液體)的方法，即所謂的液浸法。於此情形，做為投影光學系統與感光性基板之間的光路中填滿液體的方法，可以採用已在國際公開號WO99/49504中被揭示的局部填滿液體，日本專利特開平6-124873也揭示保持曝光對象的基板的平台在液槽中使移動的方法，日本專利特開平10-303114也揭示在平台上形成所定深度的液槽，且在其中保持基板等的方法。Further, in the above embodiment, a method of filling a medium (typically a liquid) having a refractive index of 1.1 or more, that is, a so-called liquid immersion method, may be used in the optical path between the projection optical system and the photosensitive substrate. In this case, as a method of filling the optical path between the projection optical system and the photosensitive substrate, a method which has been disclosed in International Publication No. WO99/49504 can be employed.The method of filling the liquid in the liquid tank is also disclosed in Japanese Patent Laid-Open No. Hei 6-124873, and the method of forming a substrate having a predetermined depth on the platform is disclosed in Japanese Patent Laid-Open No. Hei 10-303114, and A method in which a substrate or the like is held.
又，做為液體，較佳使用可以對曝光的光有穿透性且高折射率，而相對投影光學系統與基板表面被塗佈的光阻是安定的液體，例如以KrF準分子雷射光或是ArF準分子雷射光做為曝光的光的情形，做為液體的可以使用純水、去離子水。又，使用做為曝光的光的F2雷射的情形，作為液體的有可以使用可以透過F2雷射光，例如氟素系油或氟化聚醚(PFPE)等的氟素系液體。Moreover, as a liquid, it is preferably used to have transparency and high refractive index to the exposed light, and the photoresist coated on the surface of the projection optical system and the substrate is a stable liquid, for example, KrF excimer laser light or It is a case where ArF excimer laser light is used as exposure light, and pure water or deionized water can be used as a liquid. Further, in the case of using an F2 laser as the light to be exposed, a fluorine-based liquid which can transmit F2 laser light, such as a fluorine-based oil or a fluorinated polyether (PFPE), can be used as the liquid.
1‧‧‧光源1‧‧‧Light source
4‧‧‧偏光狀態變換部4‧‧‧Polarized state transformation unit
4a‧‧‧1/4波長板4a‧‧1/4 wavelength plate
4b‧‧‧1/2波長板4b‧‧‧1/2 wavelength plate
4c‧‧‧消偏振鏡4c‧‧•Depolarizer
5‧‧‧繞射光學元件5‧‧‧Diffractive optical components
6‧‧‧無焦點透鏡6‧‧‧Focusless lens
8‧‧‧圓錐柱狀鏡系統8‧‧‧Conical cylindrical mirror system
9‧‧‧伸縮透鏡9‧‧‧ Telescopic lens
10‧‧‧偏光變換元件10‧‧‧Polarized light conversion elements
10A~10D‧‧‧各基本元件10A~10D‧‧‧ Basic components
10E‧‧‧中央區域10E‧‧‧Central Area
11‧‧‧微複眼透鏡11‧‧‧Micro-Full Eye Lens
12‧‧‧偏光監視器12‧‧‧ Polarized light monitor
12a‧‧‧分光器12a‧‧ ‧ splitter
13‧‧‧集光系統13‧‧‧Light collecting system
14‧‧‧罩幕遮板14‧‧‧ Cover curtain
15‧‧‧成像光學系統15‧‧‧ imaging optical system
104c‧‧‧偏光消解部材104c‧‧‧ polarized digestion components
M‧‧‧罩幕M‧‧‧ mask
PL‧‧‧投影光學系統PL‧‧‧Projection Optical System
W‧‧‧晶圓W‧‧‧ wafer
圖1繪示根據本發明實施例的曝光裝置結構示意圖。FIG. 1 is a schematic structural view of an exposure apparatus according to an embodiment of the invention.
圖2繪示相對輪帶狀二次光源，圓錐柱狀鏡系統的作用說明。FIG. 2 illustrates the action of the conical cylindrical mirror system with respect to the wheeled secondary light source.
圖3繪示相對輪帶狀二次光源，伸縮透鏡的作用說明。FIG. 3 illustrates the action of the telescopic lens with respect to the wheeled secondary light source.
圖4繪示圖1的偏光監視器的內部結構示意斜視圖。4 is a schematic perspective view showing the internal structure of the polarization monitor of FIG. 1.
圖5繪示圖1的偏光變換元件的內部結構示意圖。FIG. 5 is a schematic diagram showing the internal structure of the polarization conversion element of FIG. 1. FIG.
圖6繪示水晶旋光性說明圖。Fig. 6 is a diagram showing the crystal optical rotation.
圖7繪示利用偏光變換元件的作用，被設定成周方向偏光狀態的輪帶狀二次光源示意圖。Fig. 7 is a schematic view showing a belt-shaped secondary light source set to a circumferentially polarized state by the action of a polarization conversion element.
圖8繪示利用偏光變換元件的作用，被設定成徑方向偏光狀態的輪帶狀二次光源示意圖。Fig. 8 is a view showing a belt-shaped secondary light source which is set to a polarization state in the radial direction by the action of the polarization conversion element.
圖9繪示多個偏光變換元件可以交換的變化示意圖。FIG. 9 is a schematic diagram showing changes in exchange of a plurality of polarization conversion elements.
圖10繪示做為圖9的交換機構的轉台10T被載置多種偏光變換元件10a~10e示意圖。Fig. 10 is a view showing a plurality of polarization conversion elements 10a to 10e on which the turntable 10T as the switching mechanism of Fig. 9 is placed.
圖11A~11E繪示多種偏光變換元件10a~10e分別的結構示意圖。11A to 11E are schematic diagrams showing the structures of the plurality of polarization conversion elements 10a to 10e, respectively.
圖12A~12C繪示利用偏光變換元件的作用被設定成周方向偏光狀態的二次光源的一例示意圖。12A to 12C are diagrams showing an example of a secondary light source in which the action of the polarization conversion element is set to a circumferentially polarized state.
圖13繪示設置成迴繞光軸AX可以旋轉的偏光變換元件10f的結構示意圖。FIG. 13 is a schematic view showing the structure of the polarization conversion element 10f which is arranged to be rotatable around the optical axis AX.
圖14A~14C繪示利用偏光變換元件10f的作用，被設定成周方向偏光狀態的二次光源的一例示意圖。14A to 14C are diagrams showing an example of a secondary light source that is set to be in a circumferentially polarized state by the action of the polarization conversion element 10f.
圖15A~15C繪示由8個扇形基本構件所構成的偏光變換元件，得到迴繞光軸AX可以旋轉的二次光源的一例示意圖。15A to 15C are diagrams showing an example of a secondary light source in which a polarization conversion element composed of eight sector-shaped basic members is rotated, and a secondary light source that can be rotated around the optical axis AX is obtained.
圖16繪示偏光變換元件，被配置在照明光學系統的瞳附近位置內、圓錐柱狀鏡系統8的正前面位置(入射側附近位置)一例示意圖。Fig. 16 is a view showing an example of a polarization conversion element disposed at a position immediately before the pupil of the illumination optical system and at a position directly in front of the conical prism system 8 (a position near the incident side).
圖17繪示如圖16所示的變化例，為滿足條件式(1)與(2)的說明示意圖。Fig. 17 is a diagram showing the modification of Fig. 16 in order to satisfy the conditional expressions (1) and (2).
圖18繪示偏光變換元件，配置在照明光學系統的瞳附近位置內、成像光學系統15的瞳附近位置一例示意圖。Fig. 18 is a view showing an example of a position where the polarization conversion element is disposed in the vicinity of the pupil of the illumination optical system and near the pupil of the imaging optical system 15.
圖19繪示為了檢出照明晶圓W的光的偏光狀態以及光強度的晶圓面偏光監視器90的結構示意圖。FIG. 19 is a view showing the configuration of the wafer surface polarized light monitor 90 for detecting the polarization state of the light of the illumination wafer W and the light intensity.
圖20繪示使用4分割的偏光變換元件10f，進行4分割周方向偏光輪帶照明，以得到輪帶狀二次光源31示意圖。FIG. 20 is a diagram showing the use of a four-divided polarization conversion element 10f for performing four-division circumferential direction polarization wheel illumination to obtain a wheel-shaped secondary light source 31.Figure.
圖21繪示得到做為微元件的半導體元件的實際製程。Figure 21 illustrates the actual process of obtaining a semiconductor component as a microcomponent.
圖22繪示得到做為微元件的液晶顯示元件的實際製程。Figure 22 illustrates the actual process of obtaining a liquid crystal display element as a micro-element.
10‧‧‧偏光變換元件10‧‧‧Polarized light conversion elements
10A~10D‧‧‧各基本元件10A~10D‧‧‧ Basic components
10E‧‧‧中央區域10E‧‧‧Central Area
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004030555 | 2004-02-06 | ||
| JP2004358218 | 2004-12-10 |
| Publication Number | Publication Date |
|---|---|
| TW201230146A TW201230146A (en) | 2012-07-16 |
| TWI494972Btrue TWI494972B (en) | 2015-08-01 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094100817ATWI389174B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW097117881ATWI379344B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW102139993ATWI505329B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method |
| TW106113666ATWI609410B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus ,light-exposure method and device manufacturing method |
| TW097117896ATWI412067B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW106144296ATW201809727A (en) | 2004-02-06 | 2005-01-12 | Polarization changing device |
| TW097117888ATWI360837B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination |
| TW097117893ATWI437618B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW101102214ATWI494972B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW104133152ATWI614795B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method |
| TW097117899ATWI366219B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW102139992ATWI511182B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094100817ATWI389174B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW097117881ATWI379344B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW102139993ATWI505329B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method |
| TW106113666ATWI609410B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus ,light-exposure method and device manufacturing method |
| TW097117896ATWI412067B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW106144296ATW201809727A (en) | 2004-02-06 | 2005-01-12 | Polarization changing device |
| TW097117888ATWI360837B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination |
| TW097117893ATWI437618B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104133152ATWI614795B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method |
| TW097117899ATWI366219B (en) | 2004-02-06 | 2005-01-12 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| TW102139992ATWI511182B (en) | 2004-02-06 | 2005-01-12 | Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method |
| Country | Link |
|---|---|
| US (10) | US20060170901A1 (en) |
| EP (5) | EP2615479B1 (en) |
| JP (8) | JP4747844B2 (en) |
| KR (10) | KR101323492B1 (en) |
| TW (12) | TWI389174B (en) |
| WO (1) | WO2005076045A1 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101547077B1 (en) | 2003-04-09 | 2015-08-25 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
| TWI573175B (en) | 2003-10-28 | 2017-03-01 | 尼康股份有限公司 | Optical illumination device, exposure device, exposure method and device manufacturing method |
| TWI385414B (en) | 2003-11-20 | 2013-02-11 | 尼康股份有限公司 | Optical illuminating apparatus, illuminating method, exposure apparatus, exposure method and device fabricating method |
| KR101165862B1 (en) | 2004-01-16 | 2012-07-17 | 칼 짜이스 에스엠티 게엠베하 | Polarization-modulating optical element |
| US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
| US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
| TWI395068B (en) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | Optical system, exposure device and method of exposure |
| TWI389174B (en) | 2004-02-06 | 2013-03-11 | 尼康股份有限公司 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| US7324280B2 (en) | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
| EP1796139A4 (en)* | 2004-08-10 | 2009-08-26 | Nikon Corp | Illumination optical equipment, exposure system and method |
| TWI453796B (en) | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | Polarizing change unit and fabricating method of device |
| US7375799B2 (en)* | 2005-02-25 | 2008-05-20 | Asml Netherlands B.V. | Lithographic apparatus |
| JP4612849B2 (en)* | 2005-03-01 | 2011-01-12 | キヤノン株式会社 | Exposure method, exposure apparatus, and device manufacturing method |
| JP2006269853A (en)* | 2005-03-25 | 2006-10-05 | Sony Corp | Exposure apparatus and method of exposure |
| JP4691594B2 (en)* | 2005-06-13 | 2011-06-01 | エーエスエムエル ネザーランズ ビー．ブイ． | Passive reticle tool, lithographic apparatus and method for patterning devices in a lithographic tool |
| JP4976670B2 (en)* | 2005-08-24 | 2012-07-18 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2007103835A (en)* | 2005-10-07 | 2007-04-19 | Toshiba Corp | Exposure apparatus and exposure method |
| JP2007123333A (en)* | 2005-10-25 | 2007-05-17 | Canon Inc | Exposure method |
| EP1953805A4 (en)* | 2005-11-10 | 2010-03-31 | Nikon Corp | Lighting optical system, exposure system, and exposure method |
| US7932994B2 (en)* | 2005-12-28 | 2011-04-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| JP4798489B2 (en)* | 2006-01-23 | 2011-10-19 | 株式会社ニコン | Optical characteristic measuring method and apparatus, and exposure apparatus |
| EP1986223A4 (en) | 2006-02-16 | 2010-08-25 | Nikon Corp | Exposure apparatus, exposing method, and device manufacturing method |
| KR20080101865A (en) | 2006-02-16 | 2008-11-21 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
| WO2007100081A1 (en) | 2006-03-03 | 2007-09-07 | Nikon Corporation | Exposure method and apparatus, and device manufacturing method |
| US20070242254A1 (en) | 2006-03-17 | 2007-10-18 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US7884921B2 (en)* | 2006-04-12 | 2011-02-08 | Nikon Corporation | Illumination optical apparatus, projection exposure apparatus, projection optical system, and device manufacturing method |
| KR20090007277A (en)* | 2006-04-14 | 2009-01-16 | 가부시키가이샤 니콘 | Exposure apparatus, device manufacturing method and exposure method |
| EP2009678A4 (en)* | 2006-04-17 | 2011-04-06 | Nikon Corp | Illuminating optical apparatus, exposure apparatus and device manufacturing method |
| EP1857879A1 (en)* | 2006-05-15 | 2007-11-21 | Advanced Mask Technology Center GmbH & Co. KG | An illumination system and a photolithography apparatus |
| KR20090029686A (en) | 2006-06-16 | 2009-03-23 | 가부시키가이샤 니콘 | Variable slit device, lighting device, exposure device, exposure method and device manufacturing method |
| JP5023589B2 (en)* | 2006-07-21 | 2012-09-12 | 大日本印刷株式会社 | Photomask and method for designing the photomask |
| DE102007027985A1 (en)* | 2006-12-21 | 2008-06-26 | Carl Zeiss Smt Ag | Optical system, in particular illumination device or projection objective of a microlithographic projection exposure apparatus |
| US7952685B2 (en)* | 2007-03-15 | 2011-05-31 | Carl Zeiss Smt Ag | Illuminator for a lithographic apparatus and method |
| KR101450362B1 (en)* | 2007-04-03 | 2014-10-14 | 칼 짜이스 에스엠티 게엠베하 | An optical system, in particular a lighting device or projection objective of a microlithographic projection exposure apparatus, |
| US7872731B2 (en)* | 2007-04-20 | 2011-01-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20080285000A1 (en)* | 2007-05-17 | 2008-11-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100916623B1 (en)* | 2007-06-12 | 2009-09-09 | 한국과학기술원 | Three-layer polarization modulator for modulating incident light from high aperture lenses |
| DE102007043958B4 (en)* | 2007-09-14 | 2011-08-25 | Carl Zeiss SMT GmbH, 73447 | Illumination device of a microlithographic projection exposure apparatus |
| US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
| JP4971932B2 (en)* | 2007-10-01 | 2012-07-11 | キヤノン株式会社 | Illumination optical system, exposure apparatus, device manufacturing method, and polarization control unit |
| US20090091730A1 (en)* | 2007-10-03 | 2009-04-09 | Nikon Corporation | Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method |
| US20090097006A1 (en)* | 2007-10-10 | 2009-04-16 | Asml Netherlands B.V. | Apparatus and Method for Obtaining Information Indicative of the Uniformity of a Projection System of a Lithographic Apparatus |
| KR20100085974A (en) | 2007-10-12 | 2010-07-29 | 가부시키가이샤 니콘 | Illuminating optical apparatus, and exposure method and apparatus |
| JP5267029B2 (en) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| CN101681123B (en) | 2007-10-16 | 2013-06-12 | 株式会社尼康 | Illumination optical system, exposure apparatus, and device manufacturing method |
| CN101681125B (en)* | 2007-10-16 | 2013-08-21 | 株式会社尼康 | Illumination optical system, exposure apparatus, and device manufacturing method |
| JP2010004008A (en)* | 2007-10-31 | 2010-01-07 | Nikon Corp | Optical unit, illumination optical device, exposure apparatus, exposure method and production process of device |
| JP5326259B2 (en) | 2007-11-08 | 2013-10-30 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| DE102007055062A1 (en)* | 2007-11-16 | 2009-05-28 | Carl Zeiss Smt Ag | Optical system, and method for characterizing an optical system |
| TW200929333A (en) | 2007-12-17 | 2009-07-01 | Nikon Corp | Illumination optical system, exposure apparatus, and device manufacturing method |
| EP2233960A4 (en)* | 2007-12-17 | 2012-01-25 | Nikon Corp | Spatial light modulating unit, illumination optical system, aligner, and device manufacturing method |
| US8908151B2 (en) | 2008-02-14 | 2014-12-09 | Nikon Corporation | Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system |
| TW200938957A (en)* | 2008-03-05 | 2009-09-16 | Nanya Technology Corp | Feedback system and feedback method for controlling power ratio of light source |
| JPWO2009125511A1 (en) | 2008-04-11 | 2011-07-28 | 株式会社ニコン | Spatial light modulation unit, illumination optical system, exposure apparatus, and device manufacturing method |
| US20090257043A1 (en)* | 2008-04-14 | 2009-10-15 | Nikon Corporation | Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system |
| US20090265148A1 (en)* | 2008-04-16 | 2009-10-22 | Synopsys, Inc. | Modeling a sector-polarized-illumination source in an optical lithography system |
| US9116302B2 (en) | 2008-06-19 | 2015-08-25 | Ravenbrick Llc | Optical metapolarizer device |
| DE102008041179B4 (en)* | 2008-08-12 | 2010-11-04 | Carl Zeiss Smt Ag | Illumination optics for a microlithography projection exposure apparatus |
| EP2324386A4 (en) | 2008-08-20 | 2013-03-27 | Ravenbrick Llc | Methods for fabricating thermochromic filters |
| WO2010024106A1 (en)* | 2008-08-28 | 2010-03-04 | 株式会社ニコン | Illumination optical system, aligner, and process for fabricating device |
| JP5051475B2 (en)* | 2008-10-27 | 2012-10-17 | セイコーエプソン株式会社 | 1/4 wavelength plate, optical pickup device and reflection type liquid crystal display device |
| US20100123883A1 (en)* | 2008-11-17 | 2010-05-20 | Nikon Corporation | Projection optical system, exposure apparatus, and device manufacturing method |
| WO2010073794A1 (en) | 2008-12-24 | 2010-07-01 | 株式会社 ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| WO2010073795A1 (en) | 2008-12-24 | 2010-07-01 | 株式会社 ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| JP5671455B2 (en)* | 2009-01-21 | 2015-02-18 | レイブンブリック，エルエルシー | Optical metapolarizer device |
| JP2010197352A (en)* | 2009-02-27 | 2010-09-09 | Hitachi High-Technologies Corp | Defect inspection method and defect inspecting apparatus |
| JP2011014707A (en)* | 2009-07-01 | 2011-01-20 | Canon Inc | Exposure apparatus, and device manufacturing method |
| TW201102765A (en) | 2009-07-01 | 2011-01-16 | Nikon Corp | Grinding device, grinding method, exposure device and production method of a device |
| US20110037962A1 (en)* | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| KR20120116329A (en) | 2010-02-20 | 2012-10-22 | 가부시키가이샤 니콘 | Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method |
| US9389519B2 (en) | 2010-02-25 | 2016-07-12 | Nikon Corporation | Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method |
| US20110205519A1 (en) | 2010-02-25 | 2011-08-25 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP2012004465A (en)* | 2010-06-19 | 2012-01-05 | Nikon Corp | Illumination optical system, exposure equipment, and device manufacturing method |
| JP5366019B2 (en) | 2010-08-02 | 2013-12-11 | 株式会社ニコン | Transmission optical system, illumination optical system, exposure apparatus, and device manufacturing method |
| US20120212722A1 (en) | 2011-02-21 | 2012-08-23 | Nikon Corporation | Fast Illumination Simulator Based on a Calibrated Flexible Point Spread Function |
| US10120283B2 (en) | 2011-06-06 | 2018-11-06 | Nikon Corporation | Illumination method, illumination optical device, and exposure device |
| FR2978255B1 (en)* | 2011-07-22 | 2014-02-21 | Horiba Jobin Yvon Sas | OPTICAL CONCOTICAL LIGHTING DEVICE WITH HOLLOW CONE FOR OPTICAL MICROSCOPE AND OPTICAL MICROSCOPY METHOD IN CONSCOPY |
| WO2013018799A1 (en) | 2011-08-04 | 2013-02-07 | 株式会社ニコン | Illumination device |
| US9213227B2 (en)* | 2011-08-18 | 2015-12-15 | Nikon Corporation | Custom color or polarization sensitive CCD for separating multiple signals in autofocus projection system |
| GB2508972B (en)* | 2011-09-29 | 2015-09-02 | Gen Electric | Aperture stop assembly and aperture element for an optical imaging system |
| CN103033942B (en)* | 2011-09-29 | 2015-07-15 | 通用电气公司 | Optical imaging system and method and aperture diaphragm assembly and aperture element |
| RU2624453C2 (en)* | 2011-10-18 | 2017-07-04 | Филипс Лайтинг Холдинг Б.В. | Split beam lighting device and lighting system |
| KR102170875B1 (en)* | 2011-10-24 | 2020-10-28 | 가부시키가이샤 니콘 | Illumination optical assembly, exposure apparatus, and device manufacturing method |
| JP6001874B2 (en)* | 2012-02-17 | 2016-10-05 | 日東電工株式会社 | OPTICAL LAMINATE AND METHOD FOR PRODUCING OPTICAL LAMINATE |
| DE102012206150B9 (en)* | 2012-04-16 | 2014-06-12 | Carl Zeiss Smt Gmbh | Optical system, in particular a microlithographic projection exposure apparatus |
| CN108107685B (en) | 2012-05-02 | 2021-01-15 | 株式会社尼康 | Exposure apparatus, exposure method, device manufacturing method, and evaluation method |
| US20140240705A1 (en)* | 2013-02-27 | 2014-08-28 | Kabushiki Kaisha Toshiba | Semiconductor device, reticle method for checking position misalignment and method for manufacturing position misalignment checking mark |
| JP6234105B2 (en)* | 2013-08-05 | 2017-11-22 | オリンパス株式会社 | Super-resolution microscope |
| JP5534276B2 (en)* | 2013-08-23 | 2014-06-25 | 株式会社ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| EP3076160A1 (en)* | 2015-03-31 | 2016-10-05 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Spatially resolved aerosol detection |
| US9709897B2 (en) | 2015-10-28 | 2017-07-18 | Cymer, Llc | Polarization control of pulsed light beam |
| DE102016214695B3 (en)* | 2016-08-08 | 2017-10-19 | Carl Zeiss Smt Gmbh | Optical system and method for correcting mask errors with this system |
| KR102676879B1 (en) | 2017-02-08 | 2024-06-19 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| US11537051B2 (en) | 2017-03-16 | 2022-12-27 | Nikon Corporation | Control apparatus and control method, exposure apparatus and exposure method, device manufacturing method, data generating method and program |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB856621A (en)* | 1956-07-20 | 1960-12-21 | Nat Res Dev | Improvements in or relating to polarising microscopes |
| JPH0653120A (en)* | 1992-07-27 | 1994-02-25 | Nikon Corp | Lighting optics |
| JPH10104427A (en)* | 1996-10-03 | 1998-04-24 | Sankyo Seiki Mfg Co Ltd | Wavelength plate, and optical pickup unit equipped with the same |
| EP0937999A1 (en)* | 1998-02-20 | 1999-08-25 | Carl Zeiss | Optical system with polarisation compensator |
| JP2002075816A (en)* | 2000-08-24 | 2002-03-15 | Asahi Optical Co Ltd | Beam train detection method and detection phase filter |
| JP2002324743A (en)* | 2001-04-24 | 2002-11-08 | Canon Inc | Exposure method and apparatus |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE206607C (en) | ||||
| JP3293882B2 (en) | 1992-03-27 | 2002-06-17 | 株式会社東芝 | Projection exposure equipment |
| US3146294A (en) | 1959-02-13 | 1964-08-25 | American Optical Corp | Interference microscope optical systems |
| US3180216A (en) | 1962-08-13 | 1965-04-27 | American Optical Corp | System and apparatus for variable phase microscopy |
| JPS444993Y1 (en) | 1964-05-28 | 1969-02-24 | ||
| GB1192417A (en)* | 1967-04-10 | 1970-05-20 | Safege Transp | Improvements in or relating to Overhead Railways |
| US3758201A (en) | 1971-07-15 | 1973-09-11 | American Optical Corp | Optical system for improved eye refraction |
| US3892469A (en) | 1974-02-01 | 1975-07-01 | Hughes Aircraft Co | Electro-optical variable focal length lens using optical ring polarizer |
| US3892470A (en)* | 1974-02-01 | 1975-07-01 | Hughes Aircraft Co | Optical device for transforming monochromatic linearly polarized light to ring polarized light |
| FR2385241A1 (en)* | 1976-12-23 | 1978-10-20 | Marie G R P | POLARIZATION MODE CONVERTERS FOR LASER BEAMS AND PLASMA GENERATORS USING THEM |
| US4103260A (en) | 1977-01-03 | 1978-07-25 | Hughes Aircraft Company | Spatial polarization coding electro-optical transmitter |
| US4198123A (en) | 1977-03-23 | 1980-04-15 | Baxter Travenol Laboratories, Inc. | Optical scrambler for depolarizing light |
| FR2413678A1 (en)* | 1977-12-28 | 1979-07-27 | Marie G R P | MODE CONVERTERS FROM A NON-CONFINANT WAVE TO A CONFINANT WAVE IN THE FAR INFRARED |
| US4286843A (en)* | 1979-05-14 | 1981-09-01 | Reytblatt Zinovy V | Polariscope and filter therefor |
| JPS5857066B2 (en) | 1979-06-29 | 1983-12-17 | 古河電気工業株式会社 | linear motor |
| ATE1462T1 (en) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | OPTICAL LITHOGRAPHY PROCESS AND DEVICE FOR COPYING A PATTERN ONTO A SEMICONDUCTOR DISC. |
| FR2465241A1 (en) | 1979-09-10 | 1981-03-20 | Thomson Csf | ILLUMINATOR DEVICE FOR PROVIDING AN ADJUSTABLE INTENSITY DISTRIBUTION ILLUMINATION BEAM AND PATTERN TRANSFER SYSTEM COMPRISING SUCH A DEVICE |
| FR2474708B1 (en) | 1980-01-24 | 1987-02-20 | Dme | HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57152129A (en) | 1981-03-13 | 1982-09-20 | Sanyo Electric Co Ltd | Developing method of resist |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS5845502U (en) | 1981-09-21 | 1983-03-26 | 株式会社津山金属製作所 | wide angle reflector |
| JPS5849932A (en) | 1981-09-21 | 1983-03-24 | Ushio Inc | Illuminance distribution pattern adjuster |
| JPS58115945A (en) | 1981-12-29 | 1983-07-09 | Toyoda Gosei Co Ltd | Power transmission and signal transmission and reception method to steering section |
| JPS58202448A (en) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | exposure equipment |
| DD206607A1 (en) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS |
| JPS5919912A (en) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | Immersion distance holding device |
| DD242880A1 (en) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
| JPS59226317A (en) | 1983-06-06 | 1984-12-19 | Nippon Kogaku Kk <Nikon> | Illuminating device |
| DD221563A1 (en) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
| JPS59155843A (en) | 1984-01-27 | 1984-09-05 | Hitachi Ltd | Exposing device |
| DD224448A1 (en) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
| JPS6144429A (en) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | Alignment method |
| JPS6145923A (en) | 1984-08-10 | 1986-03-06 | Aronshiya:Kk | Manufacture of rotary disk for reflection type rotary encoder |
| JPH0682598B2 (en) | 1984-10-11 | 1994-10-19 | 日本電信電話株式会社 | Projection exposure device |
| JPS61217434A (en) | 1985-03-20 | 1986-09-27 | Mitsubishi Chem Ind Ltd | Conveying device |
| JPS6194342U (en) | 1984-11-27 | 1986-06-18 | ||
| JPS61156736A (en) | 1984-12-27 | 1986-07-16 | Canon Inc | Exposing device |
| JPS61196532A (en) | 1985-02-26 | 1986-08-30 | Canon Inc | Exposure device |
| JPS61251025A (en) | 1985-04-30 | 1986-11-08 | Canon Inc | Projection exposing apparatus |
| JPS61270049A (en) | 1985-05-24 | 1986-11-29 | Toshiba Corp | Table device |
| JPS622540A (en) | 1985-06-28 | 1987-01-08 | Canon Inc | Light integrator and Koehler lighting system including it |
| JPS622539A (en) | 1985-06-28 | 1987-01-08 | Canon Inc | Illumination optical system |
| DE3523641C1 (en)* | 1985-07-02 | 1986-12-18 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Device for selecting rotationally symmetrical polarization components of a light bundle and use of such a device |
| US4683420A (en) | 1985-07-10 | 1987-07-28 | Westinghouse Electric Corp. | Acousto-optic system for testing high speed circuits |
| JPS6217705A (en) | 1985-07-16 | 1987-01-26 | Nippon Kogaku Kk <Nikon> | Illumination device for telecentric optical system |
| JPS6265326A (en) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | Exposure device |
| JPS62100161A (en) | 1985-10-23 | 1987-05-09 | Shin Etsu Chem Co Ltd | Planar motor |
| JPS62120026A (en) | 1985-11-20 | 1987-06-01 | Fujitsu Ltd | X-ray exposing apparatus |
| JPH07105323B2 (en) | 1985-11-22 | 1995-11-13 | 株式会社日立製作所 | Exposure method |
| JPS62121417A (en) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | Immersion objective lens device |
| JPS62153710A (en) | 1985-12-27 | 1987-07-08 | Furukawa Alum Co Ltd | Preparation of reflective substrate for rotary encoder |
| US4744615A (en) | 1986-01-29 | 1988-05-17 | International Business Machines Corporation | Laser beam homogenizer |
| JPH0782981B2 (en) | 1986-02-07 | 1995-09-06 | 株式会社ニコン | Projection exposure method and apparatus |
| JPS62188316A (en) | 1986-02-14 | 1987-08-17 | Canon Inc | Projection exposure device |
| JPS62203526A (en) | 1986-02-28 | 1987-09-08 | トヨタ自動車株式会社 | Wireless power transmission device |
| JPH0666246B2 (en) | 1986-05-14 | 1994-08-24 | キヤノン株式会社 | Illumination optics |
| JP2506616B2 (en) | 1986-07-02 | 1996-06-12 | キヤノン株式会社 | Exposure apparatus and circuit manufacturing method using the same |
| JPS6336526A (en) | 1986-07-30 | 1988-02-17 | Oki Electric Ind Co Ltd | Wafer exposure equipment |
| JPH0695511B2 (en) | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | Washing and drying treatment method |
| JPS63128713A (en) | 1986-11-19 | 1988-06-01 | Matsushita Electric Ind Co Ltd | Distortion correction method for scanning exposure equipment |
| JPS63131008A (en) | 1986-11-20 | 1988-06-03 | Fujitsu Ltd | Optical alignment method |
| JPS63141313A (en) | 1986-12-03 | 1988-06-13 | Hitachi Ltd | Thin plate deformation device |
| JPS63157419A (en) | 1986-12-22 | 1988-06-30 | Toshiba Corp | Fine pattern transfer apparatus |
| JPS63160192A (en) | 1986-12-23 | 1988-07-02 | 株式会社明電舎 | Connecting conductor of radio frequency heater |
| JPS63231217A (en) | 1987-03-19 | 1988-09-27 | Omron Tateisi Electronics Co | Measuring instrument for movement quantity |
| JPH0718699B2 (en) | 1987-05-08 | 1995-03-06 | 株式会社ニコン | Surface displacement detector |
| JPS6426704A (en) | 1987-05-11 | 1989-01-30 | Jiei Shirinian Jiyon | Pocket structure of garment |
| JPS63292005A (en) | 1987-05-25 | 1988-11-29 | Nikon Corp | Travel amount detection device with running error correction |
| JPH07117371B2 (en) | 1987-07-14 | 1995-12-18 | 株式会社ニコン | measuring device |
| JPS6468926A (en) | 1987-09-09 | 1989-03-15 | Nikon Corp | Measurement of image distortion in projection optical system |
| US4981342A (en) | 1987-09-24 | 1991-01-01 | Allergan Inc. | Multifocal birefringent lens system |
| JPH0191419A (en) | 1987-10-01 | 1989-04-11 | Canon Inc | Aligner |
| JPH01115033A (en) | 1987-10-28 | 1989-05-08 | Hitachi Ltd | Gas discharge display device |
| JPH01147516A (en) | 1987-12-04 | 1989-06-09 | Canon Inc | Beam position controller |
| JP2728133B2 (en) | 1987-12-09 | 1998-03-18 | 株式会社リコー | Digital image forming equipment |
| JPH01202833A (en) | 1988-02-09 | 1989-08-15 | Toshiba Corp | High precision XY stage device |
| JPH0831513B2 (en) | 1988-02-22 | 1996-03-27 | 株式会社ニコン | Substrate suction device |
| JPH0545102Y2 (en) | 1988-02-24 | 1993-11-17 | ||
| JPH01255404A (en) | 1988-04-05 | 1989-10-12 | Toshiba Corp | Electromagnet device for levitation |
| US4952815A (en) | 1988-04-14 | 1990-08-28 | Nikon Corporation | Focusing device for projection exposure apparatus |
| JPH01278240A (en) | 1988-04-28 | 1989-11-08 | Tokyo Electron Ltd | Uninterruptible power source for apparatus for manufacture of semiconductor |
| JPH01276043A (en) | 1988-04-28 | 1989-11-06 | Mitsubishi Cable Ind Ltd | Waveguide type liquid detector |
| JPH01286478A (en) | 1988-05-13 | 1989-11-17 | Hitachi Ltd | Beam uniformizing optical system and manufacture thereof |
| JPH01292343A (en) | 1988-05-19 | 1989-11-24 | Fujitsu Ltd | Pellicle |
| JPH01314247A (en) | 1988-06-13 | 1989-12-19 | Fuji Plant Kogyo Kk | Automatic exposing device for printed circuit board |
| JPH0831514B2 (en) | 1988-06-21 | 1996-03-27 | 株式会社ニコン | Substrate suction device |
| JPH0242382A (en) | 1988-08-02 | 1990-02-13 | Canon Inc | moving stage structure |
| WO1990002125A1 (en) | 1988-08-22 | 1990-03-08 | Idemitsu Kosan Co. Ltd. | Oxirane derivatives and herbicides containing same as active ingredients |
| JPH0265149A (en) | 1988-08-30 | 1990-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| JP2729058B2 (en) | 1988-08-31 | 1998-03-18 | 山形日本電気株式会社 | Exposure equipment for semiconductor devices |
| JPH0297239A (en) | 1988-09-30 | 1990-04-09 | Canon Inc | Power supply for exposure equipment |
| JP2682067B2 (en) | 1988-10-17 | 1997-11-26 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP2697014B2 (en) | 1988-10-26 | 1998-01-14 | 株式会社ニコン | Exposure apparatus and exposure method |
| JPH02139146A (en) | 1988-11-15 | 1990-05-29 | Matsushita Electric Ind Co Ltd | Single stage 6 degrees of freedom positioning table |
| JP2940553B2 (en) | 1988-12-21 | 1999-08-25 | 株式会社ニコン | Exposure method |
| US5253110A (en) | 1988-12-22 | 1993-10-12 | Nikon Corporation | Illumination optical arrangement |
| JPH07104442B2 (en) | 1989-04-06 | 1995-11-13 | 旭硝子株式会社 | Method for producing magnesium fluoride film and low reflection film |
| DE3907136A1 (en) | 1989-03-06 | 1990-09-13 | Jagenberg Ag | DEVICE FOR JOINING MATERIAL RAILS |
| JPH02261073A (en) | 1989-03-29 | 1990-10-23 | Sony Corp | Ultrasonic motor |
| JPH02287308A (en) | 1989-04-03 | 1990-11-27 | Mikhailovich Khodosovich Vladimir | Method for centering lenses in optical unit mount |
| JPH02285320A (en) | 1989-04-27 | 1990-11-22 | Olympus Optical Co Ltd | Stop device for endoscope |
| JP2527807B2 (en) | 1989-05-09 | 1996-08-28 | 住友大阪セメント株式会社 | Optical associative identification device |
| JPH02298431A (en) | 1989-05-12 | 1990-12-10 | Mitsubishi Electric Corp | Electric discharge machining device |
| JPH02311237A (en) | 1989-05-25 | 1990-12-26 | Fuji Electric Co Ltd | Conveyance device |
| JPH0335201A (en)* | 1989-06-30 | 1991-02-15 | Nitto Denko Corp | Phase difference plate and production thereof |
| JPH0341399A (en) | 1989-07-10 | 1991-02-21 | Nikon Corp | Manufacture of multilayered film reflecting mirror |
| JPH0364811A (en) | 1989-07-31 | 1991-03-20 | Okazaki Seisakusho:Kk | Hollow core wire mi cable and manufacture thereof |
| JPH0372298A (en) | 1989-08-14 | 1991-03-27 | Nikon Corp | Manufacturing method of multilayer reflective mirror |
| JPH0394445A (en) | 1989-09-06 | 1991-04-19 | Mitsubishi Electric Corp | Semiconductor wafer transfer system |
| JPH03132663A (en) | 1989-10-18 | 1991-06-06 | Fujitsu Ltd | pellicle |
| JPH03134341A (en) | 1989-10-20 | 1991-06-07 | Fuji Photo Film Co Ltd | Damper mechanism, vibrationproof mechanism and optical beam scanning device into which this damper mechanism, etc. are incorporated |
| JP3067142B2 (en) | 1989-11-28 | 2000-07-17 | 富士通株式会社 | Photomask inspection apparatus and photomask inspection method |
| JP2784225B2 (en) | 1989-11-28 | 1998-08-06 | 双葉電子工業株式会社 | Relative displacement measurement device |
| JPH03211812A (en) | 1990-01-17 | 1991-09-17 | Canon Inc | Exposure aligner |
| JPH03246615A (en) | 1990-02-23 | 1991-11-05 | Nec Corp | Mouse input device |
| JPH03263810A (en) | 1990-03-14 | 1991-11-25 | Sumitomo Heavy Ind Ltd | Vibration control method of semiconductor aligner |
| JPH0710897B2 (en) | 1990-04-27 | 1995-02-08 | 日本油脂株式会社 | Plastic lens |
| JPH0432154A (en) | 1990-05-25 | 1992-02-04 | Iwasaki Electric Co Ltd | Metal halide lamp device |
| JP2897355B2 (en) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | Alignment method, exposure apparatus, and position detection method and apparatus |
| JP3077176B2 (en) | 1990-08-13 | 2000-08-14 | 株式会社ニコン | Exposure method, apparatus, and element manufacturing method |
| JP3049774B2 (en) | 1990-12-27 | 2000-06-05 | 株式会社ニコン | Projection exposure apparatus and method, and element manufacturing method |
| US7656504B1 (en) | 1990-08-21 | 2010-02-02 | Nikon Corporation | Projection exposure apparatus with luminous flux distribution |
| JP2995820B2 (en) | 1990-08-21 | 1999-12-27 | 株式会社ニコン | Exposure method and method, and device manufacturing method |
| JPH04130710A (en) | 1990-09-21 | 1992-05-01 | Hitachi Ltd | Apparatus for exposure of light |
| JP2548834B2 (en) | 1990-09-25 | 1996-10-30 | 三菱電機株式会社 | Electron beam dimension measuring device |
| JPH04133414A (en) | 1990-09-26 | 1992-05-07 | Nec Yamaguchi Ltd | Reduced projection and aligner |
| JPH04152512A (en) | 1990-10-16 | 1992-05-26 | Fujitsu Ltd | wafer chuck |
| DE4033556A1 (en) | 1990-10-22 | 1992-04-23 | Suess Kg Karl | MEASURING ARRANGEMENT FOR X, Y, (PHI) COORDINATE TABLES |
| US5072126A (en) | 1990-10-31 | 1991-12-10 | International Business Machines Corporation | Promixity alignment using polarized illumination and double conjugate projection lens |
| JPH04179115A (en) | 1990-11-08 | 1992-06-25 | Nec Kyushu Ltd | Contracted projection aligner |
| US6252647B1 (en) | 1990-11-15 | 2001-06-26 | Nikon Corporation | Projection exposure apparatus |
| US6710855B2 (en) | 1990-11-15 | 2004-03-23 | Nikon Corporation | Projection exposure apparatus and method |
| JP3094439B2 (en) | 1990-11-21 | 2000-10-03 | 株式会社ニコン | Exposure method |
| JPH0480052U (en) | 1990-11-27 | 1992-07-13 | ||
| JPH04235558A (en) | 1991-01-11 | 1992-08-24 | Toshiba Corp | Exposure device |
| JP3084761B2 (en) | 1991-02-28 | 2000-09-04 | 株式会社ニコン | Exposure method and mask |
| JP3084760B2 (en) | 1991-02-28 | 2000-09-04 | 株式会社ニコン | Exposure method and exposure apparatus |
| JP3255168B2 (en) | 1991-02-28 | 2002-02-12 | 株式会社ニコン | Exposure method, device manufacturing method using the exposure method, and exposure apparatus |
| JP3200894B2 (en) | 1991-03-05 | 2001-08-20 | 株式会社日立製作所 | Exposure method and apparatus |
| JP2860174B2 (en) | 1991-03-05 | 1999-02-24 | 三菱電機株式会社 | Chemical vapor deposition equipment |
| JPH04280619A (en) | 1991-03-08 | 1992-10-06 | Canon Inc | Wafer retaining method and retaining device |
| JPH04282539A (en) | 1991-03-11 | 1992-10-07 | Hitachi Ltd | Method for forming reflection-charge preventing film |
| JPH05259069A (en) | 1991-03-13 | 1993-10-08 | Tokyo Electron Ltd | Method of exposing periphery of wafer |
| JPH04211110A (en) | 1991-03-20 | 1992-08-03 | Hitachi Ltd | Projection aligner and aligning method |
| JPH04296092A (en) | 1991-03-26 | 1992-10-20 | Matsushita Electric Ind Co Ltd | Reflow device |
| JP2602345Y2 (en) | 1991-03-29 | 2000-01-11 | 京セラ株式会社 | Hydrostatic bearing device |
| US5251222A (en) | 1991-04-01 | 1993-10-05 | Teledyne Industries, Inc. | Active multi-stage cavity sensor |
| JPH04305917A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Close-contact exposure equipment |
| JPH04305915A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
| JP3200874B2 (en) | 1991-07-10 | 2001-08-20 | 株式会社ニコン | Projection exposure equipment |
| JPH04330961A (en) | 1991-05-01 | 1992-11-18 | Matsushita Electron Corp | Development processing equipment |
| FR2676288B1 (en) | 1991-05-07 | 1994-06-17 | Thomson Csf | LIGHT COLLECTOR FOR PROJECTOR. |
| JPH04343307A (en) | 1991-05-20 | 1992-11-30 | Ricoh Co Ltd | Laser adjusting device |
| JP2884830B2 (en) | 1991-05-28 | 1999-04-19 | キヤノン株式会社 | Automatic focusing device |
| JPH0590128A (en) | 1991-06-13 | 1993-04-09 | Nikon Corp | Aligner |
| US5541026A (en) | 1991-06-13 | 1996-07-30 | Nikon Corporation | Exposure apparatus and photo mask |
| JPH0545886A (en) | 1991-08-12 | 1993-02-26 | Nikon Corp | Square substrate exposure system |
| US5272501A (en) | 1991-08-28 | 1993-12-21 | Nikon Corporation | Projection exposure apparatus |
| JPH0562877A (en) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | Optical system for lsi manufacturing contraction projection aligner by light |
| US5348837A (en) | 1991-09-24 | 1994-09-20 | Hitachi, Ltd. | Projection exposure apparatus and pattern forming method for use therewith |
| KR950004968B1 (en) | 1991-10-15 | 1995-05-16 | 가부시키가이샤 도시바 | Projection exposure apparatus |
| JPH05109601A (en) | 1991-10-15 | 1993-04-30 | Nikon Corp | Aligner and exposure method |
| JPH05129184A (en) | 1991-10-30 | 1993-05-25 | Canon Inc | Projection exposure device |
| JPH05127086A (en) | 1991-11-01 | 1993-05-25 | Matsushita Electric Ind Co Ltd | Method for uniformizing light intensity and exposure device using the same |
| JPH05134115A (en)* | 1991-11-11 | 1993-05-28 | Ricoh Opt Ind Co Ltd | Double refraction member |
| JP3203719B2 (en) | 1991-12-26 | 2001-08-27 | 株式会社ニコン | Exposure apparatus, device manufactured by the exposure apparatus, exposure method, and device manufacturing method using the exposure method |
| JPH05199680A (en) | 1992-01-17 | 1993-08-06 | Honda Motor Co Ltd | Power supply |
| JPH0794969B2 (en) | 1992-01-29 | 1995-10-11 | 株式会社ソルテック | Positioning method and device thereof |
| JP3194155B2 (en) | 1992-01-31 | 2001-07-30 | キヤノン株式会社 | Semiconductor device manufacturing method and projection exposure apparatus using the same |
| JPH05217837A (en) | 1992-02-04 | 1993-08-27 | Toshiba Corp | X-y movable table |
| JP2866243B2 (en)* | 1992-02-10 | 1999-03-08 | 三菱電機株式会社 | Projection exposure apparatus and method of manufacturing semiconductor device |
| JP2796005B2 (en) | 1992-02-10 | 1998-09-10 | 三菱電機株式会社 | Projection exposure apparatus and polarizer |
| JP3153372B2 (en) | 1992-02-26 | 2001-04-09 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JPH05241324A (en) | 1992-02-26 | 1993-09-21 | Nikon Corp | Photomask and exposure method |
| JPH05243364A (en) | 1992-03-02 | 1993-09-21 | Hitachi Ltd | Method of destaticizing semiconductor wafer and semiconductor integrated circuit manufacturing apparatus using the same |
| JP3278896B2 (en) | 1992-03-31 | 2002-04-30 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
| US5312513A (en) | 1992-04-03 | 1994-05-17 | Texas Instruments Incorporated | Methods of forming multiple phase light modulators |
| JPH05304072A (en) | 1992-04-08 | 1993-11-16 | Nec Corp | Manufacture of semiconductor device |
| JP3242693B2 (en) | 1992-05-15 | 2001-12-25 | 富士通株式会社 | Pellicle sticking device |
| JP2673130B2 (en) | 1992-05-20 | 1997-11-05 | 株式会社キトー | Suspension support device for traveling rail |
| JP2946950B2 (en) | 1992-06-25 | 1999-09-13 | キヤノン株式会社 | Illumination apparatus and exposure apparatus using the same |
| JPH0629204A (en) | 1992-07-08 | 1994-02-04 | Fujitsu Ltd | Method and apparatus for development of resist |
| JPH0629102A (en) | 1992-07-10 | 1994-02-04 | Alps Electric Co Ltd | Chip resistor and its manufacturing method |
| JPH0636054A (en) | 1992-07-20 | 1994-02-10 | Mitsubishi Electric Corp | One-chip microcomputer |
| JPH06188169A (en) | 1992-08-24 | 1994-07-08 | Canon Inc | Imaging method, exposure apparatus using the method, and device manufacturing method using the method |
| JPH07318847A (en) | 1994-05-26 | 1995-12-08 | Nikon Corp | Lighting optics |
| JPH06104167A (en) | 1992-09-18 | 1994-04-15 | Hitachi Ltd | Exposure apparatus and semiconductor device manufacturing method |
| US6404482B1 (en) | 1992-10-01 | 2002-06-11 | Nikon Corporation | Projection exposure method and apparatus |
| JP2884947B2 (en) | 1992-10-01 | 1999-04-19 | 株式会社ニコン | Projection exposure apparatus, exposure method, and method of manufacturing semiconductor integrated circuit |
| JPH06118623A (en) | 1992-10-07 | 1994-04-28 | Fujitsu Ltd | Reticle and semiconductor exposure apparatus using the same |
| JPH06124873A (en) | 1992-10-09 | 1994-05-06 | Canon Inc | Immersion projection exposure system |
| JP2724787B2 (en) | 1992-10-09 | 1998-03-09 | キヤノン株式会社 | Positioning device |
| US5459000A (en) | 1992-10-14 | 1995-10-17 | Canon Kabushiki Kaisha | Image projection method and device manufacturing method using the image projection method |
| JPH06124872A (en) | 1992-10-14 | 1994-05-06 | Canon Inc | Image forming method and manufacture of semiconductor device using the method |
| JP3322274B2 (en) | 1992-10-29 | 2002-09-09 | 株式会社ニコン | Projection exposure method and projection exposure apparatus |
| JPH06148399A (en) | 1992-11-05 | 1994-05-27 | Nikon Corp | Multilayer mirror for X-ray and X-ray microscope |
| JPH06163350A (en) | 1992-11-19 | 1994-06-10 | Matsushita Electron Corp | Projection exposure method and device thereof |
| JP2753930B2 (en) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | Immersion type projection exposure equipment |
| JP3180133B2 (en) | 1992-12-01 | 2001-06-25 | 日本電信電話株式会社 | Projection exposure equipment |
| JPH06177007A (en) | 1992-12-01 | 1994-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Projection exposure device |
| JP2866267B2 (en) | 1992-12-11 | 1999-03-08 | 三菱電機株式会社 | Optical drawing apparatus and optical drawing method for wafer substrate |
| JP2698521B2 (en) | 1992-12-14 | 1998-01-19 | キヤノン株式会社 | Catadioptric optical system and projection exposure apparatus having the optical system |
| JPH06181157A (en) | 1992-12-15 | 1994-06-28 | Nikon Corp | Low dust generation device |
| JPH06186025A (en) | 1992-12-16 | 1994-07-08 | Yunisun:Kk | Three dimensional measuring device |
| JP2520833B2 (en) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | Immersion type liquid treatment device |
| JP3201027B2 (en) | 1992-12-22 | 2001-08-20 | 株式会社ニコン | Projection exposure apparatus and method |
| JP3316833B2 (en) | 1993-03-26 | 2002-08-19 | 株式会社ニコン | Scanning exposure method, surface position setting device, scanning type exposure device, and device manufacturing method using the method |
| JPH06204121A (en) | 1992-12-28 | 1994-07-22 | Canon Inc | Illuminator and projection aligner using the same |
| JP2765422B2 (en) | 1992-12-28 | 1998-06-18 | キヤノン株式会社 | Exposure apparatus and method for manufacturing semiconductor device using the same |
| JP2786070B2 (en) | 1993-01-29 | 1998-08-13 | セントラル硝子株式会社 | Inspection method and apparatus for transparent plate |
| JPH07245258A (en) | 1994-03-08 | 1995-09-19 | Nikon Corp | Exposure method and exposure apparatus |
| US5739898A (en) | 1993-02-03 | 1998-04-14 | Nikon Corporation | Exposure method and apparatus |
| JPH06241720A (en) | 1993-02-18 | 1994-09-02 | Sony Corp | Measuring method for displacement quantity and displacement meter |
| JPH06244082A (en) | 1993-02-19 | 1994-09-02 | Nikon Corp | Projection exposure device |
| JP3412704B2 (en) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | Projection exposure method and apparatus, and exposure apparatus |
| JP3747958B2 (en) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | Catadioptric optics |
| JP3291818B2 (en) | 1993-03-16 | 2002-06-17 | 株式会社ニコン | Projection exposure apparatus and semiconductor integrated circuit manufacturing method using the apparatus |
| JP3537843B2 (en) | 1993-03-19 | 2004-06-14 | 株式会社テクノ菱和 | Clean room ionizer |
| JPH0777191B2 (en) | 1993-04-06 | 1995-08-16 | 日本電気株式会社 | Exposure light projection device |
| JP3309871B2 (en) | 1993-04-27 | 2002-07-29 | 株式会社ニコン | Projection exposure method and apparatus, and element manufacturing method |
| JPH06326174A (en) | 1993-05-12 | 1994-11-25 | Hitachi Ltd | Wafer vacuum suction device |
| JP3265503B2 (en) | 1993-06-11 | 2002-03-11 | 株式会社ニコン | Exposure method and apparatus |
| JPH07142338A (en)* | 1993-06-14 | 1995-06-02 | Canon Inc | Image projection method and exposure apparatus using the same |
| JP3291849B2 (en) | 1993-07-15 | 2002-06-17 | 株式会社ニコン | Exposure method, device formation method, and exposure apparatus |
| US6304317B1 (en) | 1993-07-15 | 2001-10-16 | Nikon Corporation | Projection apparatus and method |
| JP3463335B2 (en) | 1994-02-17 | 2003-11-05 | 株式会社ニコン | Projection exposure equipment |
| US5677757A (en) | 1994-03-29 | 1997-10-14 | Nikon Corporation | Projection exposure apparatus |
| JPH0757993A (en) | 1993-08-13 | 1995-03-03 | Nikon Corp | Projection exposure device |
| JPH0757992A (en) | 1993-08-13 | 1995-03-03 | Nikon Corp | Projection exposure device |
| JP3844787B2 (en) | 1993-09-02 | 2006-11-15 | 日産化学工業株式会社 | Magnesium fluoride hydrate sol and its production method |
| JP3359123B2 (en) | 1993-09-20 | 2002-12-24 | キヤノン株式会社 | Aberration correction optical system |
| JP3099933B2 (en) | 1993-12-28 | 2000-10-16 | 株式会社東芝 | Exposure method and exposure apparatus |
| KR0153796B1 (en) | 1993-09-24 | 1998-11-16 | 사토 후미오 | Exposure apparatus and exposure method |
| JPH07122469A (en) | 1993-10-20 | 1995-05-12 | Nikon Corp | Projection exposure device |
| JP3505810B2 (en) | 1993-10-29 | 2004-03-15 | 株式会社日立製作所 | Pattern exposure method and apparatus |
| KR0166612B1 (en) | 1993-10-29 | 1999-02-01 | 가나이 쓰토무 | Method and apparatus for exposing pattern, mask used therefor and semiconductor integrated circuit formed by using the same |
| JP3376045B2 (en) | 1993-11-09 | 2003-02-10 | キヤノン株式会社 | Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus |
| JP3339144B2 (en) | 1993-11-11 | 2002-10-28 | 株式会社ニコン | Scanning exposure apparatus and exposure method |
| JPH07134955A (en) | 1993-11-11 | 1995-05-23 | Hitachi Ltd | Display device and its reflectance adjustment method |
| JP3278303B2 (en) | 1993-11-12 | 2002-04-30 | キヤノン株式会社 | Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus |
| JPH07147223A (en) | 1993-11-26 | 1995-06-06 | Hitachi Ltd | Pattern formation method |
| DE69432283T2 (en) | 1993-12-01 | 2004-01-22 | Sharp K.K. | Display for three-dimensional images |
| JPH07161622A (en) | 1993-12-10 | 1995-06-23 | Nikon Corp | Projection exposure device |
| JPH07167998A (en) | 1993-12-15 | 1995-07-04 | Nikon Corp | Target for laser plasma X-ray source |
| JP3487517B2 (en) | 1993-12-16 | 2004-01-19 | 株式会社リコー | Reciprocating device |
| JP3508190B2 (en) | 1993-12-21 | 2004-03-22 | セイコーエプソン株式会社 | Lighting device and projection display device |
| JPH07183201A (en) | 1993-12-21 | 1995-07-21 | Nec Corp | Exposure device and method therefor |
| JPH07190741A (en) | 1993-12-27 | 1995-07-28 | Nippon Telegr & Teleph Corp <Ntt> | Measurement error correction method |
| JPH07220989A (en) | 1994-01-27 | 1995-08-18 | Canon Inc | Exposure apparatus and device manufacturing method using the same |
| JPH07220990A (en) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Pattern forming method and exposure apparatus thereof |
| JP2715895B2 (en) | 1994-01-31 | 1998-02-18 | 日本電気株式会社 | Light intensity distribution simulation method |
| JP3372633B2 (en) | 1994-02-04 | 2003-02-04 | キヤノン株式会社 | Positioning method and positioning apparatus using the same |
| KR0173168B1 (en) | 1994-02-24 | 1999-03-20 | 가네꼬 히사시 | Exposure system for exposing resist film on wafer, illumination system and method used therefor |
| JPH07234382A (en)* | 1994-02-24 | 1995-09-05 | Matsushita Electric Ind Co Ltd | Super-resolution scanning optical device |
| JP2836483B2 (en) | 1994-05-13 | 1998-12-14 | 日本電気株式会社 | Illumination optics |
| JPH07239212A (en) | 1994-02-28 | 1995-09-12 | Nikon Corp | Position detector |
| JPH07243814A (en) | 1994-03-03 | 1995-09-19 | Fujitsu Ltd | Line width measurement method |
| JPH07263315A (en) | 1994-03-25 | 1995-10-13 | Toshiba Corp | Projection exposure device |
| US20020080338A1 (en) | 1994-03-29 | 2002-06-27 | Nikon Corporation | Projection exposure apparatus |
| US6333776B1 (en) | 1994-03-29 | 2001-12-25 | Nikon Corporation | Projection exposure apparatus |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| JPH07283119A (en) | 1994-04-14 | 1995-10-27 | Hitachi Ltd | Exposure apparatus and exposure method |
| FR2719124B1 (en) | 1994-04-21 | 1996-06-07 | Merlin Gerin | Method and device for correcting a current signal. |
| JPH088177A (en) | 1994-04-22 | 1996-01-12 | Canon Inc | Projection exposure apparatus and device manufacturing method using the same |
| JP3193567B2 (en) | 1994-04-27 | 2001-07-30 | キヤノン株式会社 | Substrate storage container |
| JP3555230B2 (en) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | Projection exposure equipment |
| JPH07335748A (en) | 1994-06-07 | 1995-12-22 | Miyazaki Oki Electric Co Ltd | Manufacture of semiconductor element |
| EP0687956B2 (en) | 1994-06-17 | 2005-11-23 | Carl Zeiss SMT AG | Illumination device |
| US5473465A (en) | 1994-06-24 | 1995-12-05 | Ye; Chun | Optical rotator and rotation-angle-variable half-waveplate rotator |
| JP3800616B2 (en) | 1994-06-27 | 2006-07-26 | 株式会社ニコン | Target moving device, positioning device, and movable stage device |
| JP3090577B2 (en) | 1994-06-29 | 2000-09-25 | 浜松ホトニクス株式会社 | Conductor layer removal method and system |
| JP3205663B2 (en) | 1994-06-29 | 2001-09-04 | 日本電子株式会社 | Charged particle beam equipment |
| JPH0822948A (en) | 1994-07-08 | 1996-01-23 | Nikon Corp | Scanning exposure device |
| JP3205468B2 (en) | 1994-07-25 | 2001-09-04 | 株式会社日立製作所 | Processing apparatus and exposure apparatus having wafer chuck |
| JPH0846751A (en) | 1994-07-29 | 1996-02-16 | Sanyo Electric Co Ltd | Illumination optical system |
| JP3613288B2 (en) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | Cleaning device for exposure apparatus |
| WO1996013752A1 (en) | 1994-10-26 | 1996-05-09 | Seiko Epson Corporation | Liquid crystal device and electronic appliance |
| JPH08136475A (en) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | Plate material surface observation device |
| JPH08151220A (en) | 1994-11-28 | 1996-06-11 | Nippon Sekiei Glass Kk | Method for molding quartz glass |
| JPH08162397A (en) | 1994-11-30 | 1996-06-21 | Canon Inc | Projection exposure apparatus and semiconductor device manufacturing method using the same |
| JPH08171054A (en) | 1994-12-16 | 1996-07-02 | Nikon Corp | Catadioptric system |
| JPH08195375A (en) | 1995-01-17 | 1996-07-30 | Sony Corp | Spin-drying method and spin-dryer |
| JPH08203803A (en) | 1995-01-24 | 1996-08-09 | Nikon Corp | Exposure equipment |
| JP3521544B2 (en) | 1995-05-24 | 2004-04-19 | 株式会社ニコン | Exposure equipment |
| JP3312164B2 (en) | 1995-04-07 | 2002-08-05 | 日本電信電話株式会社 | Vacuum suction device |
| JPH08297699A (en) | 1995-04-26 | 1996-11-12 | Hitachi Ltd | Manufacturing defect analysis support system, manufacturing system, and manufacturing defect analysis support method |
| JPH08316125A (en) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | Projection exposure method and exposure apparatus |
| US5631721A (en) | 1995-05-24 | 1997-05-20 | Svg Lithography Systems, Inc. | Hybrid illumination system for use in photolithography |
| US5663785A (en) | 1995-05-24 | 1997-09-02 | International Business Machines Corporation | Diffraction pupil filler modified illuminator for annular pupil fills |
| US5680588A (en) | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
| KR0155830B1 (en) | 1995-06-19 | 1998-11-16 | 김광호 | Advanced exposure apparatus and exposure method using the same |
| JP3531297B2 (en) | 1995-06-19 | 2004-05-24 | 株式会社ニコン | Projection exposure apparatus and projection exposure method |
| KR100474578B1 (en) | 1995-06-23 | 2005-06-21 | 가부시키가이샤 니콘 | Exp0sure apparatus |
| JP3561556B2 (en) | 1995-06-29 | 2004-09-02 | 株式会社ルネサステクノロジ | Manufacturing method of mask |
| JP3637639B2 (en) | 1995-07-10 | 2005-04-13 | 株式会社ニコン | Exposure equipment |
| JPH09108551A (en) | 1995-08-11 | 1997-04-28 | Mitsubishi Rayon Co Ltd | Water purifier |
| JPH0961686A (en) | 1995-08-23 | 1997-03-07 | Nikon Corp | Plastic lens |
| JPH0982626A (en) | 1995-09-12 | 1997-03-28 | Nikon Corp | Projection exposure device |
| JP3487527B2 (en) | 1995-09-14 | 2004-01-19 | 株式会社東芝 | Light refraction device |
| JPH0992593A (en) | 1995-09-21 | 1997-04-04 | Nikon Corp | Projection exposure device |
| US5815247A (en) | 1995-09-21 | 1998-09-29 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures |
| DE19535392A1 (en)* | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarization-rotating optical arrangement and microlithography projection exposure system with it |
| JP3433403B2 (en) | 1995-10-16 | 2003-08-04 | 三星電子株式会社 | Stepper interface device |
| JPH09134870A (en) | 1995-11-10 | 1997-05-20 | Hitachi Ltd | Pattern forming method and forming apparatus |
| JPH09148406A (en) | 1995-11-24 | 1997-06-06 | Dainippon Screen Mfg Co Ltd | Substrate carrying apparatus |
| JPH09151658A (en) | 1995-11-30 | 1997-06-10 | Nichibei Co Ltd | Runner connection device for mobile partition wall |
| JPH09160004A (en) | 1995-12-01 | 1997-06-20 | Denso Corp | Liquid crystal cell and its empty cell |
| JP3406957B2 (en) | 1995-12-06 | 2003-05-19 | キヤノン株式会社 | Optical element and exposure apparatus using the same |
| JPH09162106A (en) | 1995-12-11 | 1997-06-20 | Nikon Corp | Scanning exposure equipment |
| JPH09178415A (en) | 1995-12-25 | 1997-07-11 | Nikon Corp | Light wave interferometer |
| JPH09184787A (en) | 1995-12-28 | 1997-07-15 | Olympus Optical Co Ltd | Analysis/evaluation device for optical lens |
| JP3232473B2 (en) | 1996-01-10 | 2001-11-26 | キヤノン株式会社 | Projection exposure apparatus and device manufacturing method using the same |
| JP3189661B2 (en) | 1996-02-05 | 2001-07-16 | ウシオ電機株式会社 | Light source device |
| JP3576685B2 (en) | 1996-02-07 | 2004-10-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method using the same |
| JPH09232213A (en) | 1996-02-26 | 1997-09-05 | Nikon Corp | Projection exposure equipment |
| JPH09227294A (en) | 1996-02-26 | 1997-09-02 | Toyo Commun Equip Co Ltd | Production of artificial quartz crystal |
| US6133986A (en)* | 1996-02-28 | 2000-10-17 | Johnson; Kenneth C. | Microlens scanner for microlithography and wide-field confocal microscopy |
| JPH09243892A (en) | 1996-03-06 | 1997-09-19 | Matsushita Electric Ind Co Ltd | Optical element |
| JP3782151B2 (en) | 1996-03-06 | 2006-06-07 | キヤノン株式会社 | Gas supply device for excimer laser oscillator |
| JP3601174B2 (en) | 1996-03-14 | 2004-12-15 | 株式会社ニコン | Exposure apparatus and exposure method |
| JPH09281077A (en) | 1996-04-16 | 1997-10-31 | Hitachi Ltd | Capillary electrophoresis device |
| RU2084941C1 (en) | 1996-05-06 | 1997-07-20 | Йелстаун Корпорейшн Н.В. | Adaptive optical module |
| JP2691341B2 (en) | 1996-05-27 | 1997-12-17 | 株式会社ニコン | Projection exposure equipment |
| JPH09326338A (en) | 1996-06-04 | 1997-12-16 | Nikon Corp | Manufacturing control device |
| JPH09325255A (en) | 1996-06-06 | 1997-12-16 | Olympus Optical Co Ltd | Electronic camera |
| JPH103039A (en) | 1996-06-14 | 1998-01-06 | Nikon Corp | Catoptric system |
| JPH102865A (en) | 1996-06-18 | 1998-01-06 | Nikon Corp | Reticle inspection apparatus and inspection method |
| JPH1020195A (en) | 1996-06-28 | 1998-01-23 | Nikon Corp | Catoptric system |
| JPH1032160A (en) | 1996-07-17 | 1998-02-03 | Toshiba Corp | Pattern exposure method and exposure apparatus |
| JP3646415B2 (en) | 1996-07-18 | 2005-05-11 | ソニー株式会社 | Mask defect detection method |
| JPH1038517A (en) | 1996-07-23 | 1998-02-13 | Canon Inc | Optical displacement measuring device |
| JP3646757B2 (en) | 1996-08-22 | 2005-05-11 | 株式会社ニコン | Projection exposure method and apparatus |
| JPH1079337A (en) | 1996-09-04 | 1998-03-24 | Nikon Corp | Projection exposure equipment |
| JPH1055713A (en) | 1996-08-08 | 1998-02-24 | Ushio Inc | UV irradiation device |
| JPH1062305A (en) | 1996-08-19 | 1998-03-06 | Advantest Corp | Sensitivity correcting method of ccd camera, and lcd panel display test system with ccd camera sensitivity correcting function |
| JPH1082611A (en) | 1996-09-10 | 1998-03-31 | Nikon Corp | Surface position detection device |
| JPH1092735A (en) | 1996-09-13 | 1998-04-10 | Nikon Corp | Exposure equipment |
| JP2914315B2 (en) | 1996-09-20 | 1999-06-28 | 日本電気株式会社 | Scanning reduction projection exposure apparatus and distortion measuring method |
| DE19781041B4 (en) | 1996-10-08 | 2010-02-18 | Citizen Holdings Co., Ltd., Nishitokyo | Optical device |
| JPH10116760A (en) | 1996-10-08 | 1998-05-06 | Nikon Corp | Exposure device and substrate holding device |
| JPH10116778A (en) | 1996-10-09 | 1998-05-06 | Canon Inc | Scan exposure equipment |
| JPH10116779A (en) | 1996-10-11 | 1998-05-06 | Nikon Corp | Stage equipment |
| JP3955985B2 (en) | 1996-10-16 | 2007-08-08 | 株式会社ニコン | Mark position detection apparatus and method |
| KR100191329B1 (en) | 1996-10-23 | 1999-06-15 | 윤종용 | Method and apparatus for distance education on the Internet. |
| JP3991166B2 (en) | 1996-10-25 | 2007-10-17 | 株式会社ニコン | Illumination optical apparatus and exposure apparatus provided with the illumination optical apparatus |
| JPH10135099A (en) | 1996-10-25 | 1998-05-22 | Sony Corp | Exposure device and exposure method |
| JP4029183B2 (en) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | Projection exposure apparatus and projection exposure method |
| KR20030096435A (en) | 1996-11-28 | 2003-12-31 | 가부시키가이샤 니콘 | Aligner and method for exposure |
| JP4029182B2 (en) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | Exposure method |
| JP3624065B2 (en) | 1996-11-29 | 2005-02-23 | キヤノン株式会社 | Substrate transport apparatus, semiconductor manufacturing apparatus, and exposure apparatus |
| JPH10169249A (en) | 1996-12-12 | 1998-06-23 | Ohbayashi Corp | Base isolating structure |
| JPH10189700A (en) | 1996-12-20 | 1998-07-21 | Sony Corp | Wafer holding mechanism |
| DE69735016T2 (en) | 1996-12-24 | 2006-08-17 | Asml Netherlands B.V. | Lithographic device with two object holders |
| US5841500A (en)* | 1997-01-09 | 1998-11-24 | Tellium, Inc. | Wedge-shaped liquid crystal cell |
| JP2910716B2 (en) | 1997-01-16 | 1999-06-23 | 日本電気株式会社 | Parametric analysis method of light intensity calculation |
| JPH10206714A (en) | 1997-01-20 | 1998-08-07 | Canon Inc | Lens moving device |
| JP2926325B2 (en) | 1997-01-23 | 1999-07-28 | 株式会社ニコン | Scanning exposure method |
| JPH10209018A (en) | 1997-01-24 | 1998-08-07 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask frame and method of holding X-ray mask |
| KR970016641U (en) | 1997-02-06 | 1997-05-23 | 이석우 | Tire snow chain |
| JP3612920B2 (en) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | Exposure apparatus for producing an optical recording medium master |
| JPH10255319A (en) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | Master exposure apparatus and method |
| JPH10294268A (en) | 1997-04-16 | 1998-11-04 | Nikon Corp | Projection exposure apparatus and alignment method |
| JP3747566B2 (en) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | Immersion exposure equipment |
| JPH118194A (en) | 1997-04-25 | 1999-01-12 | Nikon Corp | Exposure condition measurement method, projection optical system evaluation method, and lithography system |
| KR100261888B1 (en) | 1997-04-30 | 2000-07-15 | 전주범 | User Information Processing Method of Digital Video Disc Recorder |
| JP3817836B2 (en) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
| JPH113856A (en) | 1997-06-11 | 1999-01-06 | Canon Inc | Projection exposure method and projection exposure apparatus |
| JPH113849A (en) | 1997-06-12 | 1999-01-06 | Sony Corp | Deformable illumination filter and semiconductor aligner |
| JP3233341B2 (en) | 1997-06-12 | 2001-11-26 | 船井電機株式会社 | Bread maker and recording medium used therein |
| JPH1114876A (en) | 1997-06-19 | 1999-01-22 | Nikon Corp | Optical structure, projection exposure optical system incorporating the optical structure, and projection exposure apparatus |
| JPH1116816A (en) | 1997-06-25 | 1999-01-22 | Nikon Corp | Projection exposure apparatus, exposure method using the apparatus, and method for manufacturing circuit device using the apparatus |
| JPH1140657A (en) | 1997-07-23 | 1999-02-12 | Nikon Corp | Sample holding device and scanning exposure device |
| US6829041B2 (en) | 1997-07-29 | 2004-12-07 | Canon Kabushiki Kaisha | Projection optical system and projection exposure apparatus having the same |
| JP3264224B2 (en) | 1997-08-04 | 2002-03-11 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
| JP3413074B2 (en) | 1997-08-29 | 2003-06-03 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JPH1187237A (en) | 1997-09-10 | 1999-03-30 | Nikon Corp | Alignment device |
| JP4164905B2 (en) | 1997-09-25 | 2008-10-15 | 株式会社ニコン | Electromagnetic force motor, stage apparatus and exposure apparatus |
| JP2000106340A (en) | 1997-09-26 | 2000-04-11 | Nikon Corp | Exposure apparatus, scanning exposure method, and stage apparatus |
| JPH11111819A (en) | 1997-09-30 | 1999-04-23 | Asahi Kasei Micro Syst Co Ltd | Wafer fixing method and light exposing device |
| JPH11111818A (en) | 1997-10-03 | 1999-04-23 | Oki Electric Ind Co Ltd | Holding device and holder for wafer |
| JPH11111601A (en) | 1997-10-06 | 1999-04-23 | Nikon Corp | Exposure method and apparatus |
| JPH11195602A (en) | 1997-10-07 | 1999-07-21 | Nikon Corp | Projection exposure method and apparatus |
| JP3097620B2 (en) | 1997-10-09 | 2000-10-10 | 日本電気株式会社 | Scanning reduction projection exposure equipment |
| JP4210871B2 (en) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | Exposure equipment |
| JPH11142556A (en) | 1997-11-13 | 1999-05-28 | Nikon Corp | Stage control method, stage apparatus, and exposure apparatus having the apparatus |
| JPH11150062A (en) | 1997-11-14 | 1999-06-02 | Nikon Corp | Vibration isolation apparatus, exposure apparatus and vibration isolation method for vibration isolation table |
| JPH11283903A (en) | 1998-03-30 | 1999-10-15 | Nikon Corp | Projection optical system inspection apparatus and projection exposure apparatus having the same |
| WO1999027568A1 (en) | 1997-11-21 | 1999-06-03 | Nikon Corporation | Projection aligner and projection exposure method |
| JPH11162831A (en) | 1997-11-21 | 1999-06-18 | Nikon Corp | Projection exposure apparatus and projection exposure method |
| JPH11163103A (en) | 1997-11-25 | 1999-06-18 | Hitachi Ltd | Semiconductor device manufacturing method and manufacturing apparatus |
| JPH11159571A (en) | 1997-11-28 | 1999-06-15 | Nikon Corp | Mechanical device, exposure apparatus, and method of operating exposure apparatus |
| JPH11166990A (en) | 1997-12-04 | 1999-06-22 | Nikon Corp | Stage apparatus, exposure apparatus, and scanning exposure apparatus |
| JPH11176727A (en) | 1997-12-11 | 1999-07-02 | Nikon Corp | Projection exposure equipment |
| WO1999031716A1 (en) | 1997-12-16 | 1999-06-24 | Nikon Corporation | Aligner, exposure method and method of manufacturing device |
| JP3673633B2 (en) | 1997-12-16 | 2005-07-20 | キヤノン株式会社 | Assembling and adjusting method of projection optical system |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| TW449672B (en) | 1997-12-25 | 2001-08-11 | Nippon Kogaku Kk | Process and apparatus for manufacturing photomask and method of manufacturing the same |
| WO1999034417A1 (en) | 1997-12-26 | 1999-07-08 | Nikon Corporation | Exposure method and exposure apparatus |
| JPH11204390A (en) | 1998-01-14 | 1999-07-30 | Canon Inc | Semiconductor manufacturing apparatus and device manufacturing method |
| JPH11219882A (en) | 1998-02-02 | 1999-08-10 | Nikon Corp | Stage and exposure equipment |
| JPH11288879A (en) | 1998-02-04 | 1999-10-19 | Hitachi Ltd | Exposure condition determining method, apparatus therefor, and method of manufacturing semiconductor device |
| JP3820728B2 (en) | 1998-02-04 | 2006-09-13 | 東レ株式会社 | Substrate measuring device |
| JPH11233434A (en) | 1998-02-17 | 1999-08-27 | Nikon Corp | Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method |
| JP4207240B2 (en) | 1998-02-20 | 2009-01-14 | 株式会社ニコン | Illuminometer for exposure apparatus, lithography system, illuminometer calibration method, and microdevice manufacturing method |
| JPH11239758A (en) | 1998-02-26 | 1999-09-07 | Dainippon Screen Mfg Co Ltd | Substrate treatment apparatus |
| SE9800665D0 (en)* | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
| JPH11260791A (en) | 1998-03-10 | 1999-09-24 | Toshiba Mach Co Ltd | Drying method of semiconductor wafer and drying equipment |
| JPH11260686A (en) | 1998-03-11 | 1999-09-24 | Toshiba Corp | Exposure method |
| JPH11264756A (en) | 1998-03-18 | 1999-09-28 | Tokyo Electron Ltd | Level detector and level detecting method, and substrate processing device |
| WO1999049366A1 (en) | 1998-03-20 | 1999-09-30 | Nikon Corporation | Photomask and projection exposure system |
| WO1999049505A1 (en) | 1998-03-24 | 1999-09-30 | Nikon Corporation | Illuminator, exposing method and apparatus, and device manufacturing method |
| EP1083462A4 (en) | 1998-03-26 | 2003-12-03 | Nikon Corp | Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device |
| WO1999049504A1 (en) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Projection exposure method and system |
| DE69931690T2 (en) | 1998-04-08 | 2007-06-14 | Asml Netherlands B.V. | Lithographic apparatus |
| JPH11307610A (en) | 1998-04-22 | 1999-11-05 | Nikon Corp | Substrate transfer device and exposure device |
| US6238063B1 (en) | 1998-04-27 | 2001-05-29 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
| JPH11312631A (en) | 1998-04-27 | 1999-11-09 | Nikon Corp | Illumination optical device and exposure device |
| WO2000070660A1 (en) | 1999-05-18 | 2000-11-23 | Nikon Corporation | Exposure method, illuminating device, and exposure system |
| JP4090115B2 (en) | 1998-06-09 | 2008-05-28 | 信越ポリマー株式会社 | Substrate storage container |
| JP3985346B2 (en) | 1998-06-12 | 2007-10-03 | 株式会社ニコン | Projection exposure apparatus, projection exposure apparatus adjustment method, and projection exposure method |
| WO1999066370A1 (en) | 1998-06-17 | 1999-12-23 | Nikon Corporation | Method for producing mask |
| JP2000012453A (en) | 1998-06-18 | 2000-01-14 | Nikon Corp | Exposure apparatus, method of using the same, exposure method, and method of manufacturing mask |
| JP2000021742A (en) | 1998-06-30 | 2000-01-21 | Canon Inc | Exposure method and exposure apparatus |
| JP2000021748A (en) | 1998-06-30 | 2000-01-21 | Canon Inc | Exposure method and exposure apparatus |
| DE19829612A1 (en) | 1998-07-02 | 2000-01-05 | Zeiss Carl Fa | Microlithography lighting system with depolarizer |
| JP2000032403A (en) | 1998-07-14 | 2000-01-28 | Sony Corp | Data transmission method, data transmitter and receiver thereof |
| JP2000029202A (en) | 1998-07-15 | 2000-01-28 | Nikon Corp | Manufacturing method of mask |
| JP2000036449A (en) | 1998-07-17 | 2000-02-02 | Nikon Corp | Exposure equipment |
| JP2000058436A (en) | 1998-08-11 | 2000-02-25 | Nikon Corp | Projection exposure apparatus and exposure method |
| WO2000011706A1 (en) | 1998-08-18 | 2000-03-02 | Nikon Corporation | Illuminator and projection exposure apparatus |
| JP2000081320A (en) | 1998-09-03 | 2000-03-21 | Canon Inc | Surface position detecting apparatus and device manufacturing method using the same |
| JP2000092815A (en) | 1998-09-10 | 2000-03-31 | Canon Inc | Stage apparatus and exposure apparatus using the stage apparatus |
| US6498501B2 (en)* | 1998-09-15 | 2002-12-24 | Vibro-Meter, S.A. | Measuring circuit |
| JP4132397B2 (en) | 1998-09-16 | 2008-08-13 | 積水化学工業株式会社 | Photocurable resin composition, liquid crystal inlet sealing agent and liquid crystal display cell |
| JP2000097616A (en) | 1998-09-22 | 2000-04-07 | Nikon Corp | Interferometer |
| US6031658A (en) | 1998-09-25 | 2000-02-29 | University Of Central Florida | Digital control polarization based optical scanner |
| JP4065923B2 (en) | 1998-09-29 | 2008-03-26 | 株式会社ニコン | Illumination apparatus, projection exposure apparatus including the illumination apparatus, projection exposure method using the illumination apparatus, and adjustment method of the projection exposure apparatus |
| JP2000121491A (en) | 1998-10-20 | 2000-04-28 | Nikon Corp | Evaluation method of optical system |
| JP2001176766A (en) | 1998-10-29 | 2001-06-29 | Nikon Corp | Illumination device and projection exposure device |
| JP2000147346A (en) | 1998-11-09 | 2000-05-26 | Toshiba Corp | Mounting mechanism for molded lenses |
| JP2000180371A (en) | 1998-12-11 | 2000-06-30 | Sharp Corp | Foreign matter inspection equipment and semiconductor processing equipment |
| US6563567B1 (en) | 1998-12-17 | 2003-05-13 | Nikon Corporation | Method and apparatus for illuminating a surface using a projection imaging apparatus |
| KR20000048227A (en) | 1998-12-17 | 2000-07-25 | 오노 시게오 | Method and apparatus for illuminating a surface using a projection imaging apparatus |
| US6406148B1 (en) | 1998-12-31 | 2002-06-18 | Texas Instruments Incorporated | Electronic color switching in field sequential video displays |
| DE60042186D1 (en)* | 1999-01-06 | 2009-06-25 | Nikon Corp | ONSSYSTEMS |
| JP4146952B2 (en) | 1999-01-11 | 2008-09-10 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2000208407A (en) | 1999-01-19 | 2000-07-28 | Nikon Corp | Exposure equipment |
| JP2000243684A (en) | 1999-02-18 | 2000-09-08 | Canon Inc | Exposure apparatus and device manufacturing method |
| JP2000240717A (en) | 1999-02-19 | 2000-09-05 | Canon Inc | Active vibration isolation device |
| JP2000252201A (en) | 1999-03-02 | 2000-09-14 | Nikon Corp | Surface position detecting method and apparatus, projection exposure method and apparatus using the same, and semiconductor device manufacturing method |
| JP2000286176A (en) | 1999-03-31 | 2000-10-13 | Hitachi Ltd | Display method of processing status in semiconductor substrate processing apparatus and semiconductor substrate processing apparatus |
| JP2000283889A (en) | 1999-03-31 | 2000-10-13 | Nikon Corp | Projection optical system inspection apparatus and inspection method, exposure apparatus, and microdevice manufacturing method |
| JP2001174615A (en) | 1999-04-15 | 2001-06-29 | Nikon Corp | Diffractive optical element, method for manufacturing the element, illumination device including the element, projection exposure apparatus, exposure method, light homogenizer, method for manufacturing light homogenizer |
| WO2000067303A1 (en) | 1999-04-28 | 2000-11-09 | Nikon Corporation | Exposure method and apparatus |
| DE19921795A1 (en)* | 1999-05-11 | 2000-11-23 | Zeiss Carl Fa | Projection exposure system and exposure method of microlithography |
| US6498869B1 (en) | 1999-06-14 | 2002-12-24 | Xiaotian Steve Yao | Devices for depolarizing polarized light |
| JP2000003874A (en) | 1999-06-15 | 2000-01-07 | Nikon Corp | Exposure method and exposure apparatus |
| JP2001007015A (en) | 1999-06-25 | 2001-01-12 | Canon Inc | Stage equipment |
| AU4395099A (en) | 1999-06-30 | 2001-01-22 | Nikon Corporation | Exposure method and device |
| US6769273B1 (en)* | 1999-07-05 | 2004-08-03 | Nikon Corporation | Method of manufacturing silica glass member and silica glass member obtained by the method |
| JP2001020951A (en) | 1999-07-07 | 2001-01-23 | Toto Ltd | Static pressure gas bearing |
| JP2001023996A (en) | 1999-07-08 | 2001-01-26 | Sony Corp | Semiconductor manufacturing method |
| DE10029938A1 (en) | 1999-07-09 | 2001-07-05 | Zeiss Carl | Optical system for projection exposure device, includes optical element which consists of magnesium fluoride, as main constituent |
| JP2001037201A (en) | 1999-07-21 | 2001-02-09 | Nikon Corp | Motor device, stage device, and exposure device |
| JP2001100311A (en) | 1999-07-23 | 2001-04-13 | Seiko Epson Corp | projector |
| JP2001044097A (en) | 1999-07-26 | 2001-02-16 | Matsushita Electric Ind Co Ltd | Exposure equipment |
| US6280034B1 (en) | 1999-07-30 | 2001-08-28 | Philips Electronics North America Corporation | Efficient two-panel projection system employing complementary illumination |
| JP3110023B1 (en) | 1999-09-02 | 2000-11-20 | 岩堀 雅行 | Fuel release device |
| JP4362857B2 (en) | 1999-09-10 | 2009-11-11 | 株式会社ニコン | Light source apparatus and exposure apparatus |
| EP1139521A4 (en) | 1999-09-10 | 2006-03-22 | Nikon Corp | LIGHT SOURCE AND METHOD FOR WAVELENGTH STABILIZATION, EXPOSURE DEVICE AND METHOD, METHOD FOR PRODUCING AN EXPOSURE DEVICE AND DEVICE MANUFACTURING METHOD AND DEVICE |
| JP2001083472A (en) | 1999-09-10 | 2001-03-30 | Nikon Corp | Light modulation device, light source device, and exposure device |
| WO2001022480A1 (en) | 1999-09-20 | 2001-03-29 | Nikon Corporation | Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices |
| WO2001023935A1 (en) | 1999-09-29 | 2001-04-05 | Nikon Corporation | Projection exposure method and apparatus and projection optical system |
| WO2001023933A1 (en) | 1999-09-29 | 2001-04-05 | Nikon Corporation | Projection optical system |
| JP2001097734A (en) | 1999-09-30 | 2001-04-10 | Toshiba Ceramics Co Ltd | Quartz glass container and manufacturing method thereof |
| WO2001027978A1 (en) | 1999-10-07 | 2001-04-19 | Nikon Corporation | Substrate, stage device, method of driving stage, exposure system and exposure method |
| JP2001110707A (en) | 1999-10-08 | 2001-04-20 | Orc Mfg Co Ltd | Optical system of peripheral aligner |
| JP2001118773A (en) | 1999-10-18 | 2001-04-27 | Nikon Corp | Stage device and exposure device |
| JP2001135560A (en) | 1999-11-04 | 2001-05-18 | Nikon Corp | Illumination optical apparatus, exposure apparatus having the illumination optical apparatus, and method for manufacturing microdevice using the exposure apparatus |
| AU1301801A (en) | 1999-11-09 | 2001-06-06 | Nikon Corporation | Illuminator, aligner, and method for fabricating device |
| JP2001144004A (en) | 1999-11-16 | 2001-05-25 | Nikon Corp | Exposure method, exposure apparatus, and device manufacturing method |
| US6361909B1 (en) | 1999-12-06 | 2002-03-26 | Industrial Technology Research Institute | Illumination aperture filter design using superposition |
| JP2001167996A (en) | 1999-12-10 | 2001-06-22 | Tokyo Electron Ltd | Substrate treatment apparatus |
| TW546550B (en) | 1999-12-13 | 2003-08-11 | Asml Netherlands Bv | An illuminator for a lithography apparatus, a lithography apparatus comprising such an illuminator, and a manufacturing method employing such a lithography apparatus |
| EP1109067B1 (en) | 1999-12-13 | 2006-05-24 | ASML Netherlands B.V. | Illuminator |
| JP2002118058A (en) | 2000-01-13 | 2002-04-19 | Nikon Corp | Projection aligner and projection exposure method |
| JP2001203140A (en) | 2000-01-20 | 2001-07-27 | Nikon Corp | Stage apparatus, exposure apparatus and device manufacturing method |
| JP3413485B2 (en) | 2000-01-31 | 2003-06-03 | 住友重機械工業株式会社 | Thrust ripple measurement method for linear motor |
| JP2005233979A (en) | 2000-02-09 | 2005-09-02 | Nikon Corp | Catadioptric optics |
| JP4018309B2 (en) | 2000-02-14 | 2007-12-05 | 松下電器産業株式会社 | Circuit parameter extraction method, semiconductor integrated circuit design method and apparatus |
| JP2001228404A (en) | 2000-02-14 | 2001-08-24 | Nikon Engineering Co Ltd | Epi-illumination microscope, probe card inspection device, and probe card manufacturing method |
| JP3302965B2 (en) | 2000-02-15 | 2002-07-15 | 株式会社東芝 | Inspection method for exposure equipment |
| JP2001228401A (en) | 2000-02-16 | 2001-08-24 | Canon Inc | Projection optical system, projection exposure apparatus using the projection optical system, and device manufacturing method |
| JP2002100561A (en) | 2000-07-19 | 2002-04-05 | Nikon Corp | Exposure method and apparatus, and device manufacturing method |
| US6771350B2 (en) | 2000-02-25 | 2004-08-03 | Nikon Corporation | Exposure apparatus and exposure method capable of controlling illumination distribution |
| JP2001313250A (en) | 2000-02-25 | 2001-11-09 | Nikon Corp | Exposure apparatus, adjustment method thereof, and device manufacturing method using the exposure apparatus |
| JP2001242269A (en) | 2000-03-01 | 2001-09-07 | Nikon Corp | Stage apparatus, stage driving method, exposure apparatus and exposure method |
| DE10010131A1 (en) | 2000-03-03 | 2001-09-06 | Zeiss Carl | Microlithography projection exposure with tangential polarization involves using light with preferred direction of polarization oriented perpendicularly with respect to plane of incidence |
| US7301605B2 (en) | 2000-03-03 | 2007-11-27 | Nikon Corporation | Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices |
| DE10012017A1 (en)* | 2000-03-11 | 2001-09-13 | Basysprint Gmbh Sys Druckind | Printing plate exposure device, has optical error and/or tolerance compensation device incorporated in electronic image processing device controlling light modulator |
| JP2001264696A (en) | 2000-03-16 | 2001-09-26 | Canon Inc | Illumination optical system and exposure apparatus having the same |
| JP2001267227A (en) | 2000-03-21 | 2001-09-28 | Canon Inc | Vibration isolation system, exposure apparatus and device manufacturing method |
| JP2001265581A (en) | 2000-03-21 | 2001-09-28 | Canon Inc | Software unauthorized use prevention system and unauthorized use prevention method |
| JP2001338868A (en) | 2000-03-24 | 2001-12-07 | Nikon Corp | Illuminance measurement device and exposure device |
| JP2001272764A (en) | 2000-03-24 | 2001-10-05 | Canon Inc | Photomask for projection exposure and projection exposure method using the same |
| JP4689064B2 (en) | 2000-03-30 | 2011-05-25 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2001282526A (en) | 2000-03-31 | 2001-10-12 | Canon Inc | Software management device, method, and computer-readable storage medium |
| JP3927753B2 (en)* | 2000-03-31 | 2007-06-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2001296105A (en) | 2000-04-12 | 2001-10-26 | Nikon Corp | Surface position detection device, exposure device and exposure method using the detection device |
| JP2001297976A (en) | 2000-04-17 | 2001-10-26 | Canon Inc | Exposure method and exposure apparatus |
| JP3514439B2 (en) | 2000-04-20 | 2004-03-31 | キヤノン株式会社 | Support structure for optical element, exposure apparatus configured using the support structure, and method for manufacturing devices and the like using the apparatus |
| JP2001307983A (en) | 2000-04-20 | 2001-11-02 | Nikon Corp | Stage device and exposure device |
| JP2001304332A (en) | 2000-04-24 | 2001-10-31 | Canon Inc | Active vibration suppression device |
| AU2001255612A1 (en) | 2000-04-25 | 2001-11-07 | Silicon Valley Group Inc | Optical reduction system with control of illumination polarization |
| JP2003532282A (en) | 2000-04-25 | 2003-10-28 | エーエスエムエル ユーエス，インコーポレイテッド | Optical reduction system without reticle diffraction induced bias |
| JP2002014005A (en) | 2000-04-25 | 2002-01-18 | Nikon Corp | Aerial image measurement method, imaging characteristic measurement method, aerial image measurement device, and exposure device |
| JP2002057097A (en) | 2000-05-31 | 2002-02-22 | Nikon Corp | Exposure apparatus, micro device, and manufacturing method thereof |
| JP2002016124A (en) | 2000-06-28 | 2002-01-18 | Sony Corp | Wafer transporting arm mechanism |
| JP2002015978A (en) | 2000-06-29 | 2002-01-18 | Canon Inc | Exposure equipment |
| JP2002043213A (en) | 2000-07-25 | 2002-02-08 | Nikon Corp | Stage equipment and exposure equipment |
| JP2002035980A (en)* | 2000-07-26 | 2002-02-05 | Matsushita Electric Ind Co Ltd | Laser processing apparatus, laser processing method, and laser oscillator |
| KR100775796B1 (en) | 2000-08-18 | 2007-11-12 | 가부시키가이샤 니콘 | Optical element holding device |
| JP2002071513A (en) | 2000-08-28 | 2002-03-08 | Nikon Corp | Interferometer for immersion microscope objective lens and method of evaluating immersion microscope objective lens |
| JP4504537B2 (en) | 2000-08-29 | 2010-07-14 | 芝浦メカトロニクス株式会社 | Spin processing equipment |
| JP2002075835A (en) | 2000-08-30 | 2002-03-15 | Nikon Corp | Illumination optical device and exposure apparatus having the illumination optical device |
| US6373614B1 (en) | 2000-08-31 | 2002-04-16 | Cambridge Research Instrumentation Inc. | High performance polarization controller and polarization sensor |
| JP2002093686A (en) | 2000-09-19 | 2002-03-29 | Nikon Corp | Stage device and exposure device |
| JP2002093690A (en) | 2000-09-19 | 2002-03-29 | Hitachi Ltd | Method for manufacturing semiconductor device |
| JP2002091922A (en) | 2000-09-20 | 2002-03-29 | Fujitsu General Ltd | Application software and content distribution management method and distribution management system |
| US6870668B2 (en) | 2000-10-10 | 2005-03-22 | Nikon Corporation | Method for evaluating image formation performance |
| JP4245286B2 (en) | 2000-10-23 | 2009-03-25 | 株式会社ニコン | Catadioptric optical system and exposure apparatus provided with the optical system |
| JP2002141270A (en) | 2000-11-01 | 2002-05-17 | Nikon Corp | Exposure equipment |
| US20020075467A1 (en) | 2000-12-20 | 2002-06-20 | Nikon Corporation | Exposure apparatus and method |
| JP2002158157A (en) | 2000-11-17 | 2002-05-31 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and method for manufacturing microdevice |
| JP2002162655A (en) | 2000-11-27 | 2002-06-07 | Sony Corp | Optical apparatus |
| JP2002170495A (en) | 2000-11-28 | 2002-06-14 | Akira Sekino | Integrate barrier rib synthetic resin rear substrate |
| JP2002231619A (en) | 2000-11-29 | 2002-08-16 | Nikon Corp | Illumination optical device and exposure apparatus having the illumination optical device |
| JP2002190438A (en) | 2000-12-21 | 2002-07-05 | Nikon Corp | Exposure equipment |
| JP2002198284A (en) | 2000-12-25 | 2002-07-12 | Nikon Corp | Stage equipment and exposure equipment |
| JP2002195912A (en) | 2000-12-27 | 2002-07-10 | Nikon Corp | Optical characteristic measuring method and apparatus, exposure apparatus, and device manufacturing method |
| JP2002203763A (en) | 2000-12-27 | 2002-07-19 | Nikon Corp | Optical characteristic measuring method and apparatus, signal sensitivity setting method, exposure apparatus, and device manufacturing method |
| JP2002202221A (en) | 2000-12-28 | 2002-07-19 | Nikon Corp | Position detecting method, position detecting device, optical characteristic measuring method, optical characteristic measuring device, exposure apparatus, and device manufacturing method |
| JP3495992B2 (en) | 2001-01-26 | 2004-02-09 | キヤノン株式会社 | Correction apparatus, exposure apparatus, device manufacturing method and device |
| US6563566B2 (en) | 2001-01-29 | 2003-05-13 | International Business Machines Corporation | System and method for printing semiconductor patterns using an optimized illumination and reticle |
| JP2002229215A (en) | 2001-01-30 | 2002-08-14 | Nikon Corp | Exposure method and exposure apparatus |
| JP2002227924A (en) | 2001-01-31 | 2002-08-14 | Canon Inc | Vibration control damper and exposure apparatus with vibration control damper |
| SE0100336L (en) | 2001-02-05 | 2002-08-06 | Micronic Laser Systems Ab | Addressing method and apparatus using the same technical area |
| CN1491427A (en) | 2001-02-06 | 2004-04-21 | ������������ʽ���� | Exposure apparatus, exposure method and device manufacturing method |
| TWI285295B (en) | 2001-02-23 | 2007-08-11 | Asml Netherlands Bv | Illumination optimization in lithography |
| DE10113612A1 (en) | 2001-02-23 | 2002-09-05 | Zeiss Carl | Sub-objective for illumination system has two lens groups, second lens group with at least first lens with negative refractive index and at least second lens with positive refractive index |
| KR100815222B1 (en) | 2001-02-27 | 2008-03-19 | 에이에스엠엘 유에스, 인크. | A method of exposing a field on a substrate stage with an image from a lithographic apparatus and at least two patterns formed on at least one reticle |
| JP2002258487A (en) | 2001-02-28 | 2002-09-11 | Nikon Corp | Exposure method and exposure apparatus |
| JP4501292B2 (en) | 2001-03-05 | 2010-07-14 | コニカミノルタホールディングス株式会社 | Coating substrate, coating material coating method, and element manufacturing method |
| JP2002289505A (en) | 2001-03-28 | 2002-10-04 | Nikon Corp | Exposure apparatus, method of adjusting exposure apparatus, method of manufacturing micro device |
| JPWO2002080185A1 (en) | 2001-03-28 | 2004-07-22 | 株式会社ニコン | Stage apparatus, exposure apparatus, and device manufacturing method |
| JP2002365783A (en) | 2001-04-05 | 2002-12-18 | Sony Corp | Apparatus of forming mask pattern, apparatus and method of manufacturing high-resolution mask as well as method of forming resist pattern |
| JP2002305140A (en) | 2001-04-06 | 2002-10-18 | Nikon Corp | Exposure apparatus and substrate processing system |
| WO2002084850A1 (en) | 2001-04-09 | 2002-10-24 | Kabushiki Kaisha Yaskawa Denki | Canned linear motor armature and canned linear motor |
| AU2002253574A1 (en) | 2001-04-24 | 2002-11-11 | Canon Kabushiki Kaisha | Exposure method and apparatus |
| JP3937903B2 (en) | 2001-04-24 | 2007-06-27 | キヤノン株式会社 | Exposure method and apparatus |
| JP2002329651A (en) | 2001-04-27 | 2002-11-15 | Nikon Corp | Exposure apparatus, method of manufacturing exposure apparatus, and method of manufacturing micro device |
| DE10124566A1 (en)* | 2001-05-15 | 2002-11-21 | Zeiss Carl | Optical imaging system with polarizing agents and quartz crystal plate therefor |
| DE10123725A1 (en) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Objective for microlithographic projection, includes lens element with axis perpendicular to specified fluoride crystal plane |
| JP2004526331A (en) | 2001-05-15 | 2004-08-26 | カール・ツアイス・エスエムテイ・アーゲー | Objective lens including fluoride crystal lens |
| DE10124474A1 (en) | 2001-05-19 | 2002-11-21 | Zeiss Carl | Microlithographic exposure involves compensating path difference by controlled variation of first and/or second optical paths; image plane difference is essentially independent of incident angle |
| DE10124803A1 (en) | 2001-05-22 | 2002-11-28 | Zeiss Carl | Polarizer and microlithography projection system with polarizer |
| US7053988B2 (en)* | 2001-05-22 | 2006-05-30 | Carl Zeiss Smt Ag. | Optically polarizing retardation arrangement, and microlithography projection exposure machine |
| JP2002353105A (en) | 2001-05-24 | 2002-12-06 | Nikon Corp | Illumination optical device, exposure apparatus having the illumination optical device, and method for manufacturing microdevice |
| JP2002359174A (en) | 2001-05-31 | 2002-12-13 | Mitsubishi Electric Corp | EXPOSURE PROCESS MANAGEMENT SYSTEM, EXPOSURE PROCESS MANAGEMENT METHOD, AND PROGRAM FOR MANAGING EXPOSURE PROCESS |
| JP2002359176A (en) | 2001-05-31 | 2002-12-13 | Canon Inc | Illumination apparatus, illumination control method, exposure apparatus, device manufacturing method and device |
| JP4622160B2 (en) | 2001-05-31 | 2011-02-02 | 旭硝子株式会社 | Diffraction grating integrated optical rotator and optical head device |
| KR100576746B1 (en) | 2001-06-01 | 2006-05-03 | 에이에스엠엘 네델란즈 비.브이. | Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product |
| JP4689081B2 (en) | 2001-06-06 | 2011-05-25 | キヤノン株式会社 | Exposure apparatus, adjustment method, and device manufacturing method |
| JP3734432B2 (en) | 2001-06-07 | 2006-01-11 | 三星電子株式会社 | Mask transfer device, mask transfer system, and mask transfer method |
| WO2002101804A1 (en) | 2001-06-11 | 2002-12-19 | Nikon Corporation | Exposure device, device manufacturing method, and temperature stabilization flow passage device |
| JP2002367523A (en) | 2001-06-12 | 2002-12-20 | Matsushita Electric Ind Co Ltd | Plasma display panel and method of manufacturing plasma display panel |
| JPWO2002103766A1 (en) | 2001-06-13 | 2004-10-07 | 株式会社ニコン | Scanning exposure method, scanning type exposure apparatus, and device manufacturing method |
| JP2002373849A (en) | 2001-06-15 | 2002-12-26 | Canon Inc | Exposure equipment |
| US6788385B2 (en) | 2001-06-21 | 2004-09-07 | Nikon Corporation | Stage device, exposure apparatus and method |
| US6831731B2 (en) | 2001-06-28 | 2004-12-14 | Nikon Corporation | Projection optical system and an exposure apparatus with the projection optical system |
| WO2003003429A1 (en) | 2001-06-28 | 2003-01-09 | Nikon Corporation | Projection optical system, exposure system and method |
| JP2003015314A (en) | 2001-07-02 | 2003-01-17 | Nikon Corp | Illumination optical device and exposure apparatus having the illumination optical device |
| JP2003015040A (en) | 2001-07-04 | 2003-01-15 | Nikon Corp | Projection optical system and exposure apparatus having the projection optical system |
| JP2003017003A (en) | 2001-07-04 | 2003-01-17 | Canon Inc | Lamp and light source device |
| US6727992B2 (en)* | 2001-07-06 | 2004-04-27 | Zygo Corporation | Method and apparatus to reduce effects of sheared wavefronts on interferometric phase measurements |
| JP3507459B2 (en) | 2001-07-09 | 2004-03-15 | キヤノン株式会社 | Illumination apparatus, exposure apparatus, and device manufacturing method |
| US6788389B2 (en) | 2001-07-10 | 2004-09-07 | Nikon Corporation | Production method of projection optical system |
| JP2003028673A (en) | 2001-07-10 | 2003-01-29 | Canon Inc | Optical encoder, semiconductor manufacturing apparatus, device manufacturing method, semiconductor manufacturing factory, and semiconductor manufacturing apparatus maintenance method |
| EP1280007B1 (en) | 2001-07-24 | 2008-06-18 | ASML Netherlands B.V. | Imaging apparatus |
| JP2003045712A (en) | 2001-07-26 | 2003-02-14 | Japan Aviation Electronics Industry Ltd | Waterproof coil and manufacturing method thereof |
| JP4522024B2 (en) | 2001-07-27 | 2010-08-11 | キヤノン株式会社 | Mercury lamp, illumination device and exposure device |
| JP2003043223A (en) | 2001-07-30 | 2003-02-13 | Nikon Corp | Beam splitter and wave plate made of crystalline material, and optical device, exposure device, and inspection device having these crystal optical components |
| JP2003059799A (en) | 2001-08-10 | 2003-02-28 | Nikon Corp | Illumination optical system, exposure apparatus, and micro device manufacturing method |
| JP2003059803A (en) | 2001-08-14 | 2003-02-28 | Canon Inc | Exposure equipment |
| JP2003068600A (en) | 2001-08-22 | 2003-03-07 | Canon Inc | Exposure apparatus and substrate chuck cooling method |
| JP2003068604A (en) | 2001-08-23 | 2003-03-07 | Nikon Corp | Illumination optical device and exposure apparatus having the illumination optical device |
| TW554411B (en) | 2001-08-23 | 2003-09-21 | Nikon Corp | Exposure apparatus |
| JP2003068607A (en) | 2001-08-23 | 2003-03-07 | Nikon Corp | Exposure apparatus and exposure method |
| JP2003075703A (en) | 2001-08-31 | 2003-03-12 | Konica Corp | Optical unit and optical device |
| JP4183166B2 (en) | 2001-08-31 | 2008-11-19 | 京セラ株式会社 | Positioning device components |
| KR100452928B1 (en) | 2001-08-31 | 2004-10-14 | 안희석 | Noodle of Potato and Method for manufacturing there of |
| KR20060098404A (en) | 2001-08-31 | 2006-09-18 | 캐논 가부시끼가이샤 | Reticle |
| JP2003081654A (en) | 2001-09-06 | 2003-03-19 | Toshiba Ceramics Co Ltd | Synthetic quartz glass and method for producing the same |
| JPWO2003023832A1 (en) | 2001-09-07 | 2004-12-24 | 株式会社ニコン | Exposure method and apparatus, and device manufacturing method |
| JP2003084445A (en) | 2001-09-13 | 2003-03-19 | Canon Inc | Scanning exposure apparatus and exposure method |
| JP2003090978A (en) | 2001-09-17 | 2003-03-28 | Canon Inc | Illumination apparatus, exposure apparatus, and device manufacturing method |
| JP4160286B2 (en) | 2001-09-21 | 2008-10-01 | 東芝マイクロエレクトロニクス株式会社 | LSI pattern dimension measurement location selection method |
| JP3910032B2 (en) | 2001-09-25 | 2007-04-25 | 大日本スクリーン製造株式会社 | Substrate developing device |
| JP2003114387A (en) | 2001-10-04 | 2003-04-18 | Nikon Corp | Catadioptric optical system and projection exposure apparatus having the optical system |
| JP4412450B2 (en) | 2001-10-05 | 2010-02-10 | 信越化学工業株式会社 | Anti-reflective filter |
| JP2003124095A (en) | 2001-10-11 | 2003-04-25 | Nikon Corp | Projection exposure method and apparatus, and device manufacturing method |
| JP2003130132A (en) | 2001-10-22 | 2003-05-08 | Nec Ameniplantex Ltd | Vibration isolation mechanism |
| US6970232B2 (en)* | 2001-10-30 | 2005-11-29 | Asml Netherlands B.V. | Structures and methods for reducing aberration in integrated circuit fabrication systems |
| JP2003202523A (en) | 2001-11-02 | 2003-07-18 | Nec Viewtechnology Ltd | Polarization unit, polarization illumination device and projection type display device using the illumination device |
| US6577379B1 (en) | 2001-11-05 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate |
| JP4362999B2 (en) | 2001-11-12 | 2009-11-11 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP4307813B2 (en) | 2001-11-14 | 2009-08-05 | 株式会社リコー | Optical deflection method, optical deflection apparatus, method of manufacturing the optical deflection apparatus, optical information processing apparatus, image forming apparatus, image projection display apparatus, and optical transmission apparatus including the optical deflection apparatus |
| US6900915B2 (en) | 2001-11-14 | 2005-05-31 | Ricoh Company, Ltd. | Light deflecting method and apparatus efficiently using a floating mirror |
| JP2003161882A (en) | 2001-11-29 | 2003-06-06 | Nikon Corp | Projection optical system, exposure apparatus and exposure method |
| JP3809095B2 (en) | 2001-11-29 | 2006-08-16 | ペンタックス株式会社 | Light source system for exposure apparatus and exposure apparatus |
| JP2003166856A (en) | 2001-11-29 | 2003-06-13 | Fuji Electric Co Ltd | Optical encoder |
| JP3945569B2 (en) | 2001-12-06 | 2007-07-18 | 東京応化工業株式会社 | Development device |
| JP2003188087A (en) | 2001-12-21 | 2003-07-04 | Sony Corp | Aligning method and aligner and method for manufacturing semiconductor device |
| JP2003249443A (en) | 2001-12-21 | 2003-09-05 | Nikon Corp | Stage apparatus, stage position management method, exposure method, exposure apparatus, and device manufacturing method |
| TW200301848A (en) | 2002-01-09 | 2003-07-16 | Nikon Corp | Exposure apparatus and exposure method |
| TW200302507A (en) | 2002-01-21 | 2003-08-01 | Nikon Corp | Stage device and exposure device |
| JP3809381B2 (en) | 2002-01-28 | 2006-08-16 | キヤノン株式会社 | Linear motor, stage apparatus, exposure apparatus, and device manufacturing method |
| JP2003229347A (en) | 2002-01-31 | 2003-08-15 | Canon Inc | Semiconductor manufacturing equipment |
| JP2003233001A (en) | 2002-02-07 | 2003-08-22 | Canon Inc | Reflection type projection optical system, exposure apparatus and device manufacturing method |
| US20050134825A1 (en) | 2002-02-08 | 2005-06-23 | Carl Zeiss Smt Ag | Polarization-optimized illumination system |
| DE10206061A1 (en) | 2002-02-08 | 2003-09-04 | Carl Zeiss Semiconductor Mfg S | Polarization-optimized lighting system |
| JP2003240906A (en) | 2002-02-20 | 2003-08-27 | Dainippon Printing Co Ltd | Antireflection body and method of manufacturing the same |
| JP2003257812A (en) | 2002-02-27 | 2003-09-12 | Nikon Corp | Evaluation method of imaging optical system, adjustment method of imaging optical system, exposure apparatus and exposure method |
| JP2003258071A (en) | 2002-02-28 | 2003-09-12 | Nikon Corp | Substrate holding device and exposure device |
| JP4352458B2 (en) | 2002-03-01 | 2009-10-28 | 株式会社ニコン | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, exposure apparatus manufacturing method, program, and device manufacturing method |
| JP3984841B2 (en) | 2002-03-07 | 2007-10-03 | キヤノン株式会社 | Distortion measuring apparatus, distortion suppressing apparatus, exposure apparatus, and device manufacturing method |
| JP2003263119A (en) | 2002-03-07 | 2003-09-19 | Fuji Xerox Co Ltd | Rib-attached electrode and its manufacturing method |
| DE10210899A1 (en) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refractive projection lens for immersion lithography |
| JP3975787B2 (en) | 2002-03-12 | 2007-09-12 | ソニー株式会社 | Solid-state image sensor |
| JP4100011B2 (en) | 2002-03-13 | 2008-06-11 | セイコーエプソン株式会社 | Surface treatment apparatus, organic EL device manufacturing apparatus, and manufacturing method |
| US20050094268A1 (en) | 2002-03-14 | 2005-05-05 | Carl Zeiss Smt Ag | Optical system with birefringent optical elements |
| US7085052B2 (en) | 2002-03-14 | 2006-08-01 | Optellios, Inc. | Over-parameterized polarization controller |
| JP4335495B2 (en) | 2002-03-27 | 2009-09-30 | 株式会社日立ハイテクノロジーズ | Constant pressure chamber, irradiation apparatus using the same, and circuit pattern inspection apparatus |
| JP2003297727A (en)* | 2002-04-03 | 2003-10-17 | Nikon Corp | Illumination optical device, exposure apparatus and exposure method |
| EP1494267A4 (en) | 2002-04-09 | 2008-01-30 | Nikon Corp | Exposure method, exposure device, and device manufacturing method |
| US6894712B2 (en) | 2002-04-10 | 2005-05-17 | Fuji Photo Film Co., Ltd. | Exposure head, exposure apparatus, and application thereof |
| DE10310690A1 (en) | 2002-04-12 | 2003-10-30 | Heidelberger Druckmasch Ag | Sheet guide in sheet-processing machine especially rotary printer has pick-up pieces, free air jet nozzles and air cushion |
| JP3950732B2 (en) | 2002-04-23 | 2007-08-01 | キヤノン株式会社 | Illumination optical system, illumination method and exposure apparatus |
| JP4333078B2 (en) | 2002-04-26 | 2009-09-16 | 株式会社ニコン | Projection optical system, exposure apparatus including the projection optical system, exposure method using the projection optical system, and device manufacturing method |
| WO2003093167A1 (en) | 2002-04-29 | 2003-11-13 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung | Device for protecting a chip and method for operating a chip |
| US20050095749A1 (en) | 2002-04-29 | 2005-05-05 | Mathias Krellmann | Device for protecting a chip and method for operating a chip |
| US6707534B2 (en)* | 2002-05-10 | 2004-03-16 | Anvik Corporation | Maskless conformable lithography |
| JP4324957B2 (en) | 2002-05-27 | 2009-09-02 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| US7038763B2 (en) | 2002-05-31 | 2006-05-02 | Asml Netherlands B.V. | Kit of parts for assembling an optical element, method of assembling an optical element, optical element, lithographic apparatus, and device manufacturing method |
| JP4037179B2 (en) | 2002-06-04 | 2008-01-23 | 東京エレクトロン株式会社 | Cleaning method, cleaning device |
| JP2004015187A (en) | 2002-06-04 | 2004-01-15 | Fuji Photo Film Co Ltd | Photographing auxiliary system, digital camera, and server |
| JP2004014876A (en) | 2002-06-07 | 2004-01-15 | Nikon Corp | Adjustment method, method for measuring spatial image, method for measuring image surface, and exposure device |
| JP2004022708A (en) | 2002-06-14 | 2004-01-22 | Nikon Corp | Imaging optical system, illumination optical system, exposure apparatus and exposure method |
| JP3448812B2 (en) | 2002-06-14 | 2003-09-22 | 株式会社ニコン | Mark detection apparatus, exposure apparatus having the same, and method of manufacturing semiconductor element or liquid crystal display element using the exposure apparatus |
| JP2004179172A (en) | 2002-06-26 | 2004-06-24 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
| JP4012771B2 (en) | 2002-06-28 | 2007-11-21 | 富士通エフ・アイ・ピー株式会社 | License management method, license management system, license management program |
| JP2004039952A (en) | 2002-07-05 | 2004-02-05 | Tokyo Electron Ltd | Plasma treatment apparatus and monitoring method thereof |
| JP2004040039A (en) | 2002-07-08 | 2004-02-05 | Sony Corp | Selecting method of exposing method |
| JP2004045063A (en) | 2002-07-09 | 2004-02-12 | Topcon Corp | Method of manufacturing optical rotary encoder plate and optical rotary encoder plate |
| JP2004051717A (en) | 2002-07-17 | 2004-02-19 | Mitsubishi Heavy Ind Ltd | Biomass gasifier |
| WO2004012013A2 (en) | 2002-07-26 | 2004-02-05 | Massachusetts Institute Of Technology | Optical imaging using a pupil filter and coordinated illumination polarisation |
| JP2004063847A (en) | 2002-07-30 | 2004-02-26 | Nikon Corp | Exposure apparatus, exposure method, and stage apparatus |
| JP2004063988A (en) | 2002-07-31 | 2004-02-26 | Canon Inc | Illumination optical system, exposure apparatus having the illumination optical system, and device manufacturing method |
| JP2004071851A (en) | 2002-08-07 | 2004-03-04 | Canon Inc | Semiconductor exposure method and exposure apparatus |
| JP2004085612A (en) | 2002-08-22 | 2004-03-18 | Matsushita Electric Ind Co Ltd | Halftone phase shift mask, manufacturing method thereof, and pattern forming method using the same |
| JP4095376B2 (en) | 2002-08-28 | 2008-06-04 | キヤノン株式会社 | Exposure apparatus and method, and device manufacturing method |
| JP2004095653A (en) | 2002-08-29 | 2004-03-25 | Nikon Corp | Exposure equipment |
| JP2004145269A (en) | 2002-08-30 | 2004-05-20 | Nikon Corp | Projection optical system, catadioptric projection optical system, scanning exposure apparatus and exposure method |
| US7293847B2 (en) | 2002-08-31 | 2007-11-13 | Samsung Electronics Co., Ltd. | Cabinet for recessed refrigerators |
| JP2004103674A (en) | 2002-09-06 | 2004-04-02 | Renesas Technology Corp | Method of manufacturing semiconductor integrated circuit device |
| JP2004101362A (en) | 2002-09-10 | 2004-04-02 | Canon Inc | Stage position measurement and positioning device |
| JP2004098012A (en) | 2002-09-12 | 2004-04-02 | Seiko Epson Corp | Thin film forming method, thin film forming apparatus, optical element, organic electroluminescent element, semiconductor element, and electronic equipment |
| JP2004104654A (en) | 2002-09-12 | 2004-04-02 | Ricoh Co Ltd | Image reading device |
| JP4269610B2 (en) | 2002-09-17 | 2009-05-27 | 株式会社ニコン | Exposure apparatus and method of manufacturing exposure apparatus |
| JP2004111579A (en) | 2002-09-17 | 2004-04-08 | Canon Inc | Exposure method and apparatus |
| JP3958163B2 (en) | 2002-09-19 | 2007-08-15 | キヤノン株式会社 | Exposure method |
| KR100480620B1 (en) | 2002-09-19 | 2005-03-31 | 삼성전자주식회사 | Exposing equipment including a Micro Mirror Array and exposing method using the exposing equipment |
| JP2004119497A (en) | 2002-09-24 | 2004-04-15 | Huabang Electronic Co Ltd | Semiconductor manufacturing facilities and methods |
| JP4333866B2 (en) | 2002-09-26 | 2009-09-16 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| JP2004128307A (en) | 2002-10-04 | 2004-04-22 | Nikon Corp | Exposure apparatus and adjustment method thereof |
| JP2004134682A (en) | 2002-10-15 | 2004-04-30 | Nikon Corp | Gas cylinder, stage device and exposure device |
| US6665119B1 (en) | 2002-10-15 | 2003-12-16 | Eastman Kodak Company | Wire grid polarizer |
| JP2004140145A (en) | 2002-10-17 | 2004-05-13 | Nikon Corp | Exposure equipment |
| JP2004146702A (en) | 2002-10-25 | 2004-05-20 | Nikon Corp | Optical property measuring method, exposure method and device manufacturing method |
| JP2004153064A (en) | 2002-10-31 | 2004-05-27 | Nikon Corp | Exposure equipment |
| JP2004153096A (en) | 2002-10-31 | 2004-05-27 | Nikon Corp | Exposure equipment |
| JP2004152705A (en) | 2002-11-01 | 2004-05-27 | Matsushita Electric Ind Co Ltd | Method for manufacturing organic electroluminescence device |
| JP2004165249A (en) | 2002-11-11 | 2004-06-10 | Sony Corp | Aligner and method of exposure |
| JP2004163555A (en) | 2002-11-12 | 2004-06-10 | Olympus Corp | Vertical illumination microscope and objective for vertical illumination microscope |
| CN100568101C (en) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | Photolithography apparatus and device manufacturing method |
| JP2004165416A (en) | 2002-11-13 | 2004-06-10 | Nikon Corp | Exposure equipment and building |
| JP2004172471A (en) | 2002-11-21 | 2004-06-17 | Nikon Corp | Exposure method and exposure apparatus |
| JP4378938B2 (en) | 2002-11-25 | 2009-12-09 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| US6844927B2 (en) | 2002-11-27 | 2005-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for removing optical abberations during an optical inspection |
| TWI281099B (en) | 2002-12-02 | 2007-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TW200412617A (en) | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
| JP4314555B2 (en) | 2002-12-03 | 2009-08-19 | 株式会社ニコン | Linear motor device, stage device, and exposure device |
| EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| KR20120127755A (en) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | Exposure apparatus and method for manufacturing device |
| DE10257766A1 (en) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Method for setting a desired optical property of a projection lens and microlithographic projection exposure system |
| AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
| AU2003289237A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| EP1571694A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | Exposure apparatus and method for manufacturing device |
| WO2004053955A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure system and device producing method |
| JP4232449B2 (en) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| WO2004053950A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| KR101101737B1 (en) | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method and method for manufacturing device |
| JP2004301825A (en) | 2002-12-10 | 2004-10-28 | Nikon Corp | Surface position detecting device, exposure method, and device manufacturing method |
| JP4595320B2 (en) | 2002-12-10 | 2010-12-08 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| WO2004053951A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
| US20040108973A1 (en) | 2002-12-10 | 2004-06-10 | Kiser David K. | Apparatus for generating a number of color light components |
| KR20050085026A (en) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | Optical device and projection exposure apparatus using such optical device |
| JP4352874B2 (en) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| JP2004193425A (en) | 2002-12-12 | 2004-07-08 | Nikon Corp | Movement control method and apparatus, exposure apparatus, and device manufacturing method |
| JP2004198748A (en) | 2002-12-19 | 2004-07-15 | Nikon Corp | Optical integrator, illumination optical device, exposure apparatus, and exposure method |
| JP2004205698A (en) | 2002-12-24 | 2004-07-22 | Nikon Corp | Projection optical system, exposure apparatus and exposure method |
| US6891655B2 (en) | 2003-01-02 | 2005-05-10 | Micronic Laser Systems Ab | High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices |
| JP2004221253A (en) | 2003-01-14 | 2004-08-05 | Nikon Corp | Exposure equipment |
| JP2006516724A (en) | 2003-01-15 | 2006-07-06 | マイクロニック レーザー システムズ アクチボラゲット | How to detect defective pixels |
| JP2004228497A (en) | 2003-01-27 | 2004-08-12 | Nikon Corp | Exposure apparatus and electronic device manufacturing method |
| JP2004224421A (en) | 2003-01-27 | 2004-08-12 | Tokyo Autom Mach Works Ltd | Product feeding apparatus |
| JP2004241666A (en) | 2003-02-07 | 2004-08-26 | Nikon Corp | Measurement method and exposure method |
| JP2004007417A (en) | 2003-02-10 | 2004-01-08 | Fujitsu Ltd | Information provision system |
| JP4366948B2 (en) | 2003-02-14 | 2009-11-18 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP2004259828A (en) | 2003-02-25 | 2004-09-16 | Nikon Corp | Semiconductor exposure equipment |
| JP4604452B2 (en) | 2003-02-26 | 2011-01-05 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| EP2466623B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| JP2004259985A (en) | 2003-02-26 | 2004-09-16 | Sony Corp | Resist pattern forming device, method for forming resist pattern and method for manufacturing semiconductor device using the forming method |
| US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| JP2004260115A (en) | 2003-02-27 | 2004-09-16 | Nikon Corp | Stage apparatus, exposure apparatus, and device manufacturing method |
| JP4305003B2 (en) | 2003-02-27 | 2009-07-29 | 株式会社ニコン | EUV optical system and EUV exposure apparatus |
| JP2004260081A (en) | 2003-02-27 | 2004-09-16 | Nikon Corp | Ultraviolet reflection mirror device and projection exposure apparatus using the same |
| US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| KR20050110033A (en) | 2003-03-25 | 2005-11-22 | 가부시키가이샤 니콘 | Exposure system and device production method |
| JP2004294202A (en) | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | Screen defect detection method and apparatus |
| JP4265257B2 (en) | 2003-03-28 | 2009-05-20 | 株式会社ニコン | Exposure apparatus, exposure method, and film structure |
| JP4496711B2 (en) | 2003-03-31 | 2010-07-07 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP2004304135A (en) | 2003-04-01 | 2004-10-28 | Nikon Corp | Exposure apparatus, exposure method, and method for manufacturing micro device |
| JP4374964B2 (en) | 2003-09-26 | 2009-12-02 | 株式会社ニコン | Quartz glass molding method and molding apparatus |
| WO2004091079A1 (en) | 2003-04-07 | 2004-10-21 | Kabushiki Kaisha Yaskawa Denki | Canned linear motor armature and canned linear motor |
| JP4281397B2 (en) | 2003-04-07 | 2009-06-17 | 株式会社ニコン | Quartz glass molding equipment |
| JP4341277B2 (en) | 2003-04-07 | 2009-10-07 | 株式会社ニコン | Method of forming quartz glass |
| JP4288413B2 (en) | 2003-04-07 | 2009-07-01 | 株式会社ニコン | Quartz glass molding method and molding apparatus |
| EP1612850B1 (en) | 2003-04-07 | 2009-03-25 | Nikon Corporation | Exposure apparatus and method for manufacturing a device |
| JP4465974B2 (en) | 2003-04-07 | 2010-05-26 | 株式会社ニコン | Quartz glass molding equipment |
| KR101547077B1 (en) | 2003-04-09 | 2015-08-25 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
| JP4428115B2 (en) | 2003-04-11 | 2010-03-10 | 株式会社ニコン | Immersion lithography system |
| US6842223B2 (en) | 2003-04-11 | 2005-01-11 | Nikon Precision Inc. | Enhanced illuminator for use in photolithographic systems |
| JP2004319724A (en) | 2003-04-16 | 2004-11-11 | Ses Co Ltd | Structure of washing tub in semiconductor washing apparatus |
| JPWO2004094940A1 (en) | 2003-04-23 | 2006-07-13 | 株式会社ニコン | Interferometer system, signal processing method in interferometer system, and stage using the signal processing method |
| JP2004327660A (en) | 2003-04-24 | 2004-11-18 | Nikon Corp | Scanning projection exposure apparatus, exposure method, and device manufacturing method |
| CA2522790C (en) | 2003-04-24 | 2013-12-03 | Metconnex Canada Inc. | A micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays |
| US7095546B2 (en) | 2003-04-24 | 2006-08-22 | Metconnex Canada Inc. | Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays |
| JP2004335808A (en) | 2003-05-08 | 2004-11-25 | Sony Corp | Pattern transfer device, pattern transfer method and program |
| JP2004335864A (en) | 2003-05-09 | 2004-11-25 | Nikon Corp | Exposure apparatus and exposure method |
| JP4487168B2 (en) | 2003-05-09 | 2010-06-23 | 株式会社ニコン | Stage apparatus, driving method thereof, and exposure apparatus |
| US7511886B2 (en) | 2003-05-13 | 2009-03-31 | Carl Zeiss Smt Ag | Optical beam transformation system and illumination system comprising an optical beam transformation system |
| JP2004342987A (en) | 2003-05-19 | 2004-12-02 | Canon Inc | Stage equipment |
| TW200507055A (en) | 2003-05-21 | 2005-02-16 | Nikon Corp | Polarized cancellation element, illumination device, exposure device, and exposure method |
| TWI421906B (en) | 2003-05-23 | 2014-01-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
| JP2005012190A (en) | 2003-05-23 | 2005-01-13 | Nikon Corp | Imaging optical system evaluation method, imaging optical system adjustment method, exposure apparatus, and exposure method |
| TW201806001A (en) | 2003-05-23 | 2018-02-16 | 尼康股份有限公司 | Exposure device and device manufacturing method |
| JP2004349645A (en) | 2003-05-26 | 2004-12-09 | Sony Corp | Liquid-immersed differential liquid-drainage static-pressure floating pad, master-disk exposure apparatus, and method of exposure using liquid-immersed differential liquid-drainage |
| KR101548832B1 (en) | 2003-05-28 | 2015-09-01 | 가부시키가이샤 니콘 | Exposure method, exposure device, and device manufacturing method |
| JP2004356410A (en) | 2003-05-29 | 2004-12-16 | Nikon Corp | Exposure apparatus and exposure method |
| DE10324477A1 (en) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Microlithographic projection exposure system |
| WO2004109780A1 (en) | 2003-06-04 | 2004-12-16 | Nikon Corporation | Stage apparatus, fixation method, exposure apparatus, exposure method, and device-producing method |
| JP2005005295A (en) | 2003-06-09 | 2005-01-06 | Nikon Corp | Stage apparatus and exposure apparatus |
| JP2005005395A (en) | 2003-06-10 | 2005-01-06 | Nikon Corp | Gas supply / exhaust method and apparatus, lens barrel, exposure apparatus and method |
| JP2005005521A (en) | 2003-06-12 | 2005-01-06 | Nikon Corp | Exposure apparatus, exposure method, and polarization state measuring apparatus |
| JP2005011990A (en) | 2003-06-19 | 2005-01-13 | Nikon Corp | Scanning projection exposure apparatus, illuminance calibration method and exposure method for scanning projection exposure apparatus |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| TW201721717A (en) | 2003-06-19 | 2017-06-16 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
| JP2005019628A (en) | 2003-06-25 | 2005-01-20 | Nikon Corp | Optical apparatus, exposure apparatus, and device manufacturing method |
| DE10328938A1 (en) | 2003-06-27 | 2005-01-20 | Carl Zeiss Smt Ag | Correction device for compensation of disturbances of the polarization distribution and projection objective for microlithography |
| JP3862678B2 (en) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2005024890A (en) | 2003-07-02 | 2005-01-27 | Renesas Technology Corp | Polarizer, projection lens system, aligner, and exposure method |
| JP2005026634A (en) | 2003-07-04 | 2005-01-27 | Sony Corp | Aligner and manufacturing method of semiconductor device |
| WO2005006415A1 (en) | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2005006418A1 (en) | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| JPWO2005008754A1 (en) | 2003-07-18 | 2007-09-20 | 株式会社ニコン | Flare measurement method, exposure method, and mask for flare measurement |
| JPWO2005010963A1 (en) | 2003-07-24 | 2007-09-27 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4492600B2 (en) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP4492239B2 (en) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | Exposure apparatus, device manufacturing method, and exposure apparatus control method |
| JP2005051147A (en) | 2003-07-31 | 2005-02-24 | Nikon Corp | Exposure method and exposure apparatus |
| JP2005055811A (en) | 2003-08-07 | 2005-03-03 | Olympus Corp | Optical member, optical apparatus having the optical member incorporated therein, and method of assembling the optical apparatus |
| JP2005064210A (en) | 2003-08-12 | 2005-03-10 | Nikon Corp | EXPOSURE METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD USING THE EXPOSURE METHOD, AND EXPOSURE APPARATUS |
| JP4262031B2 (en) | 2003-08-19 | 2009-05-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR101477850B1 (en) | 2003-08-29 | 2014-12-30 | 가부시키가이샤 니콘 | Liquid recovery apparatus, exposure apparatus, exposure method, and device production method |
| JP4305095B2 (en) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | Immersion projection exposure apparatus equipped with an optical component cleaning mechanism and immersion optical component cleaning method |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4218475B2 (en) | 2003-09-11 | 2009-02-04 | 株式会社ニコン | Extreme ultraviolet optical system and exposure apparatus |
| JP4323903B2 (en) | 2003-09-12 | 2009-09-02 | キヤノン株式会社 | Illumination optical system and exposure apparatus using the same |
| DE10343333A1 (en) | 2003-09-12 | 2005-04-14 | Carl Zeiss Smt Ag | Illumination system for microlithography projection exposure system, has mirror arrangement with array of individual mirrors that is controlled individually by changing angular distribution of light incident on mirror arrangement |
| JP2005091023A (en) | 2003-09-12 | 2005-04-07 | Minolta Co Ltd | Optical encoder and imaging device equipped therewith |
| EP1668421A2 (en) | 2003-09-12 | 2006-06-14 | Carl Zeiss SMT AG | Illumination system for a microlithography projection exposure installation |
| JP4444920B2 (en) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| JP2005093324A (en) | 2003-09-19 | 2005-04-07 | Toshiba Corp | Glass substrate used for image display device, glass substrate manufacturing method, and glass substrate manufacturing apparatus |
| JP2005093948A (en) | 2003-09-19 | 2005-04-07 | Nikon Corp | Exposure apparatus and adjustment method thereof, exposure method, and device manufacturing method |
| JP2005123586A (en) | 2003-09-25 | 2005-05-12 | Matsushita Electric Ind Co Ltd | Projection apparatus and projection method |
| KR101119796B1 (en) | 2003-09-26 | 2012-03-23 | 칼 짜이스 에스엠티 게엠베하 | Microlithographic projection exposure |
| US7408616B2 (en) | 2003-09-26 | 2008-08-05 | Carl Zeiss Smt Ag | Microlithographic exposure method as well as a projection exposure system for carrying out the method |
| JP4385702B2 (en) | 2003-09-29 | 2009-12-16 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP2005108925A (en) | 2003-09-29 | 2005-04-21 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4470433B2 (en) | 2003-10-02 | 2010-06-02 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP4513299B2 (en) | 2003-10-02 | 2010-07-28 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP2005114882A (en) | 2003-10-06 | 2005-04-28 | Hitachi High-Tech Electronics Engineering Co Ltd | Substrate mounting method for processing stage, substrate exposure stage, and substrate exposure apparatus |
| JP2005116831A (en) | 2003-10-08 | 2005-04-28 | Nikon Corp | Projection exposure apparatus, exposure method, and device manufacturing method |
| KR20060126949A (en) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | Substrate conveyance apparatus and substrate conveyance method, exposure apparatus, exposure method, and device manufacturing method |
| JP2005136364A (en) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | Substrate transport apparatus, exposure apparatus, and device manufacturing method |
| WO2005036619A1 (en) | 2003-10-09 | 2005-04-21 | Nikon Corporation | Illumination optical device, and exposure device and method |
| JPWO2005036620A1 (en) | 2003-10-10 | 2006-12-28 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005127460A (en) | 2003-10-27 | 2005-05-19 | Mitsubishi Heavy Ind Ltd | Base isolation and quake removing floor system |
| WO2005041276A1 (en) | 2003-10-28 | 2005-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
| TWI573175B (en) | 2003-10-28 | 2017-03-01 | 尼康股份有限公司 | Optical illumination device, exposure device, exposure method and device manufacturing method |
| JP2005140999A (en) | 2003-11-06 | 2005-06-02 | Nikon Corp | Optical system, optical system adjustment method, exposure apparatus, and exposure method |
| WO2005048326A1 (en) | 2003-11-13 | 2005-05-26 | Nikon Corporation | Variable slit apparatus, illumination apparatus, exposure apparatus, exposure method, and device producing method |
| EP1688988A1 (en) | 2003-11-17 | 2006-08-09 | Nikon Corporation | Stage drive method, stage apparatus, and exposure apparatus |
| JP4976094B2 (en) | 2003-11-20 | 2012-07-18 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, exposure method, and microdevice manufacturing method |
| TWI385414B (en) | 2003-11-20 | 2013-02-11 | 尼康股份有限公司 | Optical illuminating apparatus, illuminating method, exposure apparatus, exposure method and device fabricating method |
| JP4470095B2 (en) | 2003-11-20 | 2010-06-02 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4552428B2 (en) | 2003-12-02 | 2010-09-29 | 株式会社ニコン | Illumination optical apparatus, projection exposure apparatus, exposure method, and device manufacturing method |
| US6970233B2 (en) | 2003-12-03 | 2005-11-29 | Texas Instruments Incorporated | System and method for custom-polarized photolithography illumination |
| JP2005175177A (en) | 2003-12-11 | 2005-06-30 | Nikon Corp | Optical apparatus and exposure apparatus |
| JP2005175176A (en) | 2003-12-11 | 2005-06-30 | Nikon Corp | Exposure method and device manufacturing method |
| JP4720506B2 (en) | 2003-12-15 | 2011-07-13 | 株式会社ニコン | Stage apparatus, exposure apparatus, and exposure method |
| JP3102327U (en) | 2003-12-17 | 2004-07-02 | 国統国際股▲ふん▼有限公司 | Flexible tube leakage prevention mechanism |
| JP4954444B2 (en) | 2003-12-26 | 2012-06-13 | 株式会社ニコン | Channel forming member, exposure apparatus, and device manufacturing method |
| EP1703548B1 (en) | 2004-01-05 | 2010-05-12 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
| JP4586367B2 (en) | 2004-01-14 | 2010-11-24 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| WO2005071671A2 (en) | 2004-01-16 | 2005-08-04 | Koninklijke Philips Electronics N.V. | Optical system |
| US8270077B2 (en)* | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
| US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
| KR101165862B1 (en) | 2004-01-16 | 2012-07-17 | 칼 짜이스 에스엠티 게엠베하 | Polarization-modulating optical element |
| JP2005209705A (en) | 2004-01-20 | 2005-08-04 | Nikon Corp | Exposure apparatus and device manufacturing method |
| JP4474927B2 (en) | 2004-01-20 | 2010-06-09 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| US7697110B2 (en) | 2004-01-26 | 2010-04-13 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| TWI395068B (en) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | Optical system, exposure device and method of exposure |
| US7580559B2 (en) | 2004-01-29 | 2009-08-25 | Asml Holding N.V. | System and method for calibrating a spatial light modulator |
| WO2005076321A1 (en) | 2004-02-03 | 2005-08-18 | Nikon Corporation | Exposure apparatus and method of producing device |
| TWI389174B (en) | 2004-02-06 | 2013-03-11 | 尼康股份有限公司 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| KR101166007B1 (en) | 2004-02-10 | 2012-07-17 | 가부시키가이샤 니콘 | Aligner, device manufacturing method, maintenance method and aligning method |
| JP4370992B2 (en) | 2004-02-18 | 2009-11-25 | 株式会社ニコン | Optical element and exposure apparatus |
| US20080151200A1 (en) | 2004-02-19 | 2008-06-26 | Nikon Corporation | Exposure Apparatus and Device Manufacturing Method |
| WO2005081292A1 (en) | 2004-02-20 | 2005-09-01 | Nikon Corporation | Exposure apparatus, supply method and recovery method, exposure method, and device producing method |
| JP2005234359A (en) | 2004-02-20 | 2005-09-02 | Ricoh Co Ltd | Scanning optical system optical characteristic measuring apparatus, scanning optical system optical characteristic measuring apparatus calibration method, scanning optical system, and image forming apparatus |
| JP4693088B2 (en) | 2004-02-20 | 2011-06-01 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4333404B2 (en) | 2004-02-25 | 2009-09-16 | 株式会社ニコン | Conveying apparatus, conveying method, exposure apparatus, exposure method, and device manufacturing method |
| JP2005243904A (en) | 2004-02-26 | 2005-09-08 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| DE102004010569A1 (en) | 2004-02-26 | 2005-09-15 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure apparatus |
| US6977718B1 (en) | 2004-03-02 | 2005-12-20 | Advanced Micro Devices, Inc. | Lithography method and system with adjustable reflector |
| JP2005251549A (en) | 2004-03-04 | 2005-09-15 | Nikon Corp | Microswitch and driving method of microswitch |
| JP2005259789A (en) | 2004-03-09 | 2005-09-22 | Nikon Corp | Detection system, exposure apparatus, and device manufacturing method |
| JP2005257740A (en) | 2004-03-09 | 2005-09-22 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| JP4778685B2 (en) | 2004-03-10 | 2011-09-21 | 株式会社日立ハイテクノロジーズ | Pattern shape evaluation method and apparatus for semiconductor device |
| JP4497968B2 (en)* | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | Illumination apparatus, exposure apparatus, and device manufacturing method |
| JP2005268700A (en) | 2004-03-22 | 2005-09-29 | Nikon Corp | Stage apparatus and exposure apparatus |
| JP2005276932A (en) | 2004-03-23 | 2005-10-06 | Nikon Corp | Exposure apparatus and device manufacturing method |
| JP2005302826A (en) | 2004-04-07 | 2005-10-27 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4474979B2 (en) | 2004-04-15 | 2010-06-09 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| WO2005104195A1 (en) | 2004-04-19 | 2005-11-03 | Nikon Corporation | Exposure apparatus and device producing method |
| JP2005311020A (en) | 2004-04-21 | 2005-11-04 | Nikon Corp | Exposure method and device manufacturing method |
| JP4776891B2 (en) | 2004-04-23 | 2011-09-21 | キヤノン株式会社 | Illumination optical system, exposure apparatus, and device manufacturing method |
| JP4569157B2 (en) | 2004-04-27 | 2010-10-27 | 株式会社ニコン | Reflective projection optical system and exposure apparatus provided with the reflective projection optical system |
| US7324280B2 (en) | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
| JP2005340605A (en) | 2004-05-28 | 2005-12-08 | Nikon Corp | Exposure apparatus and adjustment method thereof |
| JP5159027B2 (en) | 2004-06-04 | 2013-03-06 | キヤノン株式会社 | Illumination optical system and exposure apparatus |
| JP2006005197A (en) | 2004-06-18 | 2006-01-05 | Canon Inc | Exposure equipment |
| JP4419701B2 (en) | 2004-06-21 | 2010-02-24 | 株式会社ニコン | Quartz glass molding equipment |
| JP2006017895A (en) | 2004-06-30 | 2006-01-19 | Integrated Solutions:Kk | Aligner |
| JP4444743B2 (en) | 2004-07-07 | 2010-03-31 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2006024819A (en) | 2004-07-09 | 2006-01-26 | Renesas Technology Corp | Immersion exposure apparatus and manufacturing method for electronic device |
| US7283209B2 (en) | 2004-07-09 | 2007-10-16 | Carl Zeiss Smt Ag | Illumination system for microlithography |
| WO2006006730A1 (en) | 2004-07-15 | 2006-01-19 | Nikon Corporation | Planar motor equipment, stage equipment, exposure equipment and device manufacturing method |
| JP2006032750A (en) | 2004-07-20 | 2006-02-02 | Canon Inc | Immersion projection exposure apparatus and device manufacturing method |
| EP1621930A3 (en)* | 2004-07-29 | 2011-07-06 | Carl Zeiss SMT GmbH | Illumination system for a microlithographic projection exposure apparatus |
| JP4411158B2 (en) | 2004-07-29 | 2010-02-10 | キヤノン株式会社 | Exposure equipment |
| JP2006049758A (en) | 2004-08-09 | 2006-02-16 | Nikon Corp | Exposure apparatus control method, and exposure method and apparatus using the same |
| JP2006054364A (en) | 2004-08-13 | 2006-02-23 | Nikon Corp | Substrate adsorption device, exposure device |
| JP4599936B2 (en) | 2004-08-17 | 2010-12-15 | 株式会社ニコン | Illumination optical apparatus, adjustment method of illumination optical apparatus, exposure apparatus, and exposure method |
| KR20070048164A (en) | 2004-08-18 | 2007-05-08 | 가부시키가이샤 니콘 | Exposure apparatus and device manufacturing method |
| JP2006073584A (en) | 2004-08-31 | 2006-03-16 | Nikon Corp | Exposure apparatus and method, and device manufacturing method |
| WO2006025341A1 (en) | 2004-09-01 | 2006-03-09 | Nikon Corporation | Substrate holder, stage apparatus, and exposure apparatus |
| US7433046B2 (en) | 2004-09-03 | 2008-10-07 | Carl Ziess Meditec, Inc. | Patterned spinning disk based optical phase shifter for spectral domain optical coherence tomography |
| JP4772306B2 (en) | 2004-09-06 | 2011-09-14 | 株式会社東芝 | Immersion optical device and cleaning method |
| JP2006080281A (en) | 2004-09-09 | 2006-03-23 | Nikon Corp | Stage apparatus, gas bearing apparatus, exposure apparatus, and device manufacturing method |
| WO2006028188A1 (en) | 2004-09-10 | 2006-03-16 | Nikon Corporation | Stage apparatus and exposure apparatus |
| CN100456423C (en) | 2004-09-14 | 2009-01-28 | 尼康股份有限公司 | Calibration method and exposure apparatus |
| JP2006086141A (en) | 2004-09-14 | 2006-03-30 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| WO2006030910A1 (en) | 2004-09-17 | 2006-03-23 | Nikon Corporation | Substrate for exposure, exposure method and device manufacturing method |
| JP2006086442A (en) | 2004-09-17 | 2006-03-30 | Nikon Corp | Stage apparatus and exposure apparatus |
| WO2006035775A1 (en) | 2004-09-27 | 2006-04-06 | Hamamatsu Photonics K.K. | Spatial light modulator, optical processor, coupling prism and method for using coupling prism |
| JP2006100363A (en) | 2004-09-28 | 2006-04-13 | Canon Inc | Exposure apparatus, exposure method, and device manufacturing method. |
| JP4747545B2 (en) | 2004-09-30 | 2011-08-17 | 株式会社ニコン | Stage apparatus, exposure apparatus, and device manufacturing method |
| US7245353B2 (en) | 2004-10-12 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method |
| GB2419208A (en) | 2004-10-18 | 2006-04-19 | Qinetiq Ltd | Optical correlation employing an optical bit delay |
| JP4335114B2 (en) | 2004-10-18 | 2009-09-30 | 日本碍子株式会社 | Micromirror device |
| JP2006120985A (en) | 2004-10-25 | 2006-05-11 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP2006128192A (en) | 2004-10-26 | 2006-05-18 | Nikon Corp | Holding device, lens barrel, exposure apparatus, and device manufacturing method |
| CN101598903A (en) | 2004-11-01 | 2009-12-09 | 株式会社尼康 | Exposure device and exposure method |
| US7271874B2 (en) | 2004-11-02 | 2007-09-18 | Asml Holding N.V. | Method and apparatus for variable polarization control in a lithography system |
| JP4517354B2 (en) | 2004-11-08 | 2010-08-04 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| EP1816671A4 (en) | 2004-11-11 | 2010-01-13 | Nikon Corp | Exposure method, device manufacturing method, and substrate |
| JP2006140366A (en) | 2004-11-15 | 2006-06-01 | Nikon Corp | Projection optical system and exposure apparatus |
| KR101411123B1 (en) | 2004-12-15 | 2014-06-25 | 가부시키가이샤 니콘 | Substrate holding apparatus, exposure apparatus and device manufacturing method |
| JP2005150759A (en) | 2004-12-15 | 2005-06-09 | Nikon Corp | Scanning exposure equipment |
| JP2006170811A (en) | 2004-12-16 | 2006-06-29 | Nikon Corp | Multilayer reflector, EUV exposure apparatus, and soft X-ray optical instrument |
| JP2006170899A (en) | 2004-12-17 | 2006-06-29 | Sendai Nikon:Kk | Photoelectric encoder |
| JP2006179516A (en) | 2004-12-20 | 2006-07-06 | Toshiba Corp | Exposure apparatus, exposure method, and semiconductor device manufacturing method |
| KR20070090876A (en) | 2004-12-24 | 2007-09-06 | 가부시키가이샤 니콘 | Magnetic guidance apparatus, stage apparatus, exposure apparatus, and device manufacturing method |
| JP2006177865A (en) | 2004-12-24 | 2006-07-06 | Ntn Corp | Magnetic encoder and bearing for wheel equipped with it |
| US20060138349A1 (en) | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4402582B2 (en) | 2004-12-27 | 2010-01-20 | 大日本印刷株式会社 | Case for large photomask and case changer |
| US7312852B2 (en) | 2004-12-28 | 2007-12-25 | Asml Netherlands B.V. | Polarized radiation in lithographic apparatus and device manufacturing method |
| US7345740B2 (en) | 2004-12-28 | 2008-03-18 | Asml Netherlands B.V. | Polarized radiation in lithographic apparatus and device manufacturing method |
| JP4632793B2 (en) | 2005-01-12 | 2011-02-16 | 京セラ株式会社 | Portable terminal with navigation function |
| US8053937B2 (en) | 2005-01-21 | 2011-11-08 | Nikon Corporation | Linear motor, stage apparatus and exposure apparatus |
| TWI453796B (en) | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | Polarizing change unit and fabricating method of device |
| US20060164711A1 (en) | 2005-01-24 | 2006-07-27 | Asml Holding N.V. | System and method utilizing an electrooptic modulator |
| WO2006080285A1 (en) | 2005-01-25 | 2006-08-03 | Nikon Corporation | Exposure device, exposure method, and micro device manufacturing method |
| WO2006085524A1 (en) | 2005-02-14 | 2006-08-17 | Nikon Corporation | Exposure equipment |
| JP4650619B2 (en) | 2005-03-09 | 2011-03-16 | 株式会社ニコン | Drive unit, optical unit, optical apparatus, and exposure apparatus |
| JP2006253572A (en) | 2005-03-14 | 2006-09-21 | Nikon Corp | Stage apparatus, exposure apparatus, and device manufacturing method |
| WO2006100889A1 (en) | 2005-03-23 | 2006-09-28 | Konica Minolta Holdings, Inc. | Method for forming organic el layer |
| JP4561425B2 (en) | 2005-03-24 | 2010-10-13 | ソニー株式会社 | Hologram recording / reproducing apparatus and hologram recording / reproducing method |
| JP4858744B2 (en) | 2005-03-24 | 2012-01-18 | 株式会社ニコン | Exposure equipment |
| JP2006278820A (en) | 2005-03-30 | 2006-10-12 | Nikon Corp | Exposure method and apparatus |
| JP4546315B2 (en) | 2005-04-07 | 2010-09-15 | 株式会社神戸製鋼所 | Manufacturing method of mold for microfabrication |
| CN101156226B (en) | 2005-04-27 | 2012-03-14 | 株式会社尼康 | Exposure method, exposure apparatus, device manufacturing method, and film evaluation method |
| JP4676815B2 (en) | 2005-05-26 | 2011-04-27 | ルネサスエレクトロニクス株式会社 | Exposure apparatus and exposure method |
| JP2006351586A (en) | 2005-06-13 | 2006-12-28 | Nikon Corp | Illumination apparatus, projection exposure apparatus, and microdevice manufacturing method |
| US7405653B2 (en)* | 2005-06-13 | 2008-07-29 | Honeywell International Inc. | System for monitoring activities and location |
| JP4710427B2 (en) | 2005-06-15 | 2011-06-29 | 株式会社ニコン | Optical element holding apparatus, lens barrel, exposure apparatus, and device manufacturing method |
| DE102005030839A1 (en) | 2005-07-01 | 2007-01-11 | Carl Zeiss Smt Ag | Projection exposure system with a plurality of projection lenses |
| US7317512B2 (en) | 2005-07-11 | 2008-01-08 | Asml Netherlands B.V. | Different polarization in cross-section of a radiation beam in a lithographic apparatus and device manufacturing method |
| EP1918983A4 (en) | 2005-08-05 | 2010-03-31 | Nikon Corp | Stage apparatus and exposure apparatus |
| JP2007048819A (en) | 2005-08-08 | 2007-02-22 | Nikon Corp | Surface position detection apparatus, exposure apparatus, and microdevice manufacturing method |
| JP2007043980A (en) | 2005-08-11 | 2007-02-22 | Sanei Gen Ffi Inc | Quality improver for japanese/western baked confectionery |
| US20070058151A1 (en) | 2005-09-13 | 2007-03-15 | Asml Netherlands B.V. | Optical element for use in lithography apparatus and method of conditioning radiation beam |
| JP2007087306A (en) | 2005-09-26 | 2007-04-05 | Yokohama National Univ | Target image designation creation method |
| JP2007093546A (en) | 2005-09-30 | 2007-04-12 | Nikon Corp | Encoder system, stage apparatus and exposure apparatus |
| JP4640090B2 (en) | 2005-10-04 | 2011-03-02 | ウシオ電機株式会社 | Discharge lamp holder and discharge lamp holding mechanism |
| JP2007113939A (en) | 2005-10-18 | 2007-05-10 | Nikon Corp | MEASUREMENT DEVICE AND MEASUREMENT METHOD, STAGE DEVICE, EXPOSURE DEVICE AND EXPOSURE METHOD |
| JP2007120334A (en) | 2005-10-25 | 2007-05-17 | Denso Corp | Abnormality diagnostic device of vehicle driving system |
| JP2007120333A (en) | 2005-10-25 | 2007-05-17 | Mitsubishi Heavy Ind Ltd | Injection pipe of combustor for rocket and combustor for rocket |
| JP4809037B2 (en) | 2005-10-27 | 2011-11-02 | 日本カニゼン株式会社 | Black plating film, method for forming the same, and article having plating film |
| JPWO2007055237A1 (en) | 2005-11-09 | 2009-04-30 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| EP1953805A4 (en) | 2005-11-10 | 2010-03-31 | Nikon Corp | Lighting optical system, exposure system, and exposure method |
| TWI397945B (en) | 2005-11-14 | 2013-06-01 | 尼康股份有限公司 | A liquid recovery member, an exposure apparatus, an exposure method, and an element manufacturing method |
| JP2007142313A (en) | 2005-11-22 | 2007-06-07 | Nikon Corp | Measuring tool and adjustment method |
| JP2007144864A (en) | 2005-11-29 | 2007-06-14 | Sanyo Electric Co Ltd | Laminated structure and refrigeration unit using the same |
| JP5194799B2 (en) | 2005-12-06 | 2013-05-08 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| WO2007066758A1 (en) | 2005-12-08 | 2007-06-14 | Nikon Corporation | Substrate holding device, exposure device, exposure method, and device fabrication method |
| JP4800901B2 (en) | 2005-12-12 | 2011-10-26 | 矢崎総業株式会社 | Voltage detection device and insulation interface |
| US20070166134A1 (en) | 2005-12-20 | 2007-07-19 | Motoko Suzuki | Substrate transfer method, substrate transfer apparatus and exposure apparatus |
| JP2007170938A (en) | 2005-12-21 | 2007-07-05 | Sendai Nikon:Kk | Encoder |
| JP2007207821A (en) | 2006-01-31 | 2007-08-16 | Nikon Corp | Variable slit device, illumination device, exposure apparatus, exposure method, and device manufacturing method |
| JP2007220767A (en) | 2006-02-15 | 2007-08-30 | Canon Inc | Exposure apparatus and device manufacturing method |
| JP2007227637A (en) | 2006-02-23 | 2007-09-06 | Canon Inc | Immersion exposure equipment |
| JPWO2007097198A1 (en) | 2006-02-27 | 2009-07-09 | 株式会社ニコン | Dichroic filter |
| JP2007234110A (en) | 2006-02-28 | 2007-09-13 | Toshiba Corp | Optical information recording apparatus and method for controlling optical information recording apparatus |
| JP4929762B2 (en) | 2006-03-03 | 2012-05-09 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| DE102006015213A1 (en) | 2006-03-30 | 2007-10-11 | Carl Zeiss Smt Ag | Polarization influencing optical arrangement for e.g. projection lens system, has optical unit changing distribution in central area of beam cross section, where beam has approximate tangential polarization distribution in central area |
| JP2007280623A (en) | 2006-04-03 | 2007-10-25 | Seiko Epson Corp | Heat treatment apparatus, thin film forming apparatus, and heat treatment method |
| JP2007295702A (en) | 2006-04-24 | 2007-11-08 | Toshiba Mach Co Ltd | Linear motor, and stage drive device |
| WO2007132862A1 (en) | 2006-05-16 | 2007-11-22 | Nikon Corporation | Projection optical system, exposure method, exposure apparatus, and method for manufacturing device |
| JP4893112B2 (en) | 2006-06-03 | 2012-03-07 | 株式会社ニコン | High frequency circuit components |
| JP4873138B2 (en) | 2006-06-21 | 2012-02-08 | 富士ゼロックス株式会社 | Information processing apparatus and program |
| JP2008041710A (en) | 2006-08-01 | 2008-02-21 | Fujitsu Ltd | Illumination optical apparatus, exposure method and design method |
| DE102006037776B3 (en)* | 2006-08-11 | 2008-02-21 | Siemens Ag | Device for calibrating a magnetic resonance system with PET function |
| JP2008058580A (en) | 2006-08-31 | 2008-03-13 | Canon Inc | Image forming apparatus, monitoring apparatus, control method, and program |
| JP2008064924A (en) | 2006-09-06 | 2008-03-21 | Seiko Epson Corp | Fixing apparatus and image forming apparatus |
| WO2008041575A1 (en) | 2006-09-29 | 2008-04-10 | Nikon Corporation | Stage device and exposure device |
| JP2007051300A (en) | 2006-10-10 | 2007-03-01 | Teijin Chem Ltd | Flame retardant resin composition |
| JP4924879B2 (en) | 2006-11-14 | 2012-04-25 | 株式会社ニコン | Encoder |
| WO2008061681A2 (en) | 2006-11-21 | 2008-05-29 | Carl Zeiss Smt Ag | Illumination lens system for projection microlithography, and measuring and monitoring method for such an illumination lens system |
| TWI452437B (en) | 2006-11-27 | 2014-09-11 | 尼康股份有限公司 | An exposure method, a pattern forming method, and an exposure apparatus, and an element manufacturing method |
| JP2007274881A (en) | 2006-12-01 | 2007-10-18 | Nikon Corp | Mobile device, fine moving body, and exposure apparatus |
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| US20110037962A1 (en) | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB856621A (en)* | 1956-07-20 | 1960-12-21 | Nat Res Dev | Improvements in or relating to polarising microscopes |
| JPH0653120A (en)* | 1992-07-27 | 1994-02-25 | Nikon Corp | Lighting optics |
| JPH10104427A (en)* | 1996-10-03 | 1998-04-24 | Sankyo Seiki Mfg Co Ltd | Wavelength plate, and optical pickup unit equipped with the same |
| EP0937999A1 (en)* | 1998-02-20 | 1999-08-25 | Carl Zeiss | Optical system with polarisation compensator |
| JP2002075816A (en)* | 2000-08-24 | 2002-03-15 | Asahi Optical Co Ltd | Beam train detection method and detection phase filter |
| JP2002324743A (en)* | 2001-04-24 | 2002-11-08 | Canon Inc | Exposure method and apparatus |
| Publication | Publication Date | Title |
|---|---|---|
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| CN101320136B (en) | Polarization conversion element, lighting optical device, exposure system, and exposure method | |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |