1297201 九、發明說明： 【發明所屬之技術領域】 別是針對需要有空 結構及其構裝方法 本發明係關於一種微電子元件，特 八及氣雄、性之微電子元件所提出之構裝 之設計。 【先前技術】 目前如石英振盪器、微機電元件、使用金屬蓋的系統 整合包裝（SiP)· 等微電子元件之構農結構設計，因 須考慮長時間運作的產品可靠度以及良好氣密性，始能確 保該微電子元件運作之穩定性。 為使前述的微電子元件具有良好氣密性，一 元件之構裝結構均係採用陶竟基板（5 )料該微電子元 件晶片（6 ) Μ支撐基座’如第七圖所示，再以一金屬蓋 板（7 )黏著密封，達成氣密效果’以期被密封於内的晶 片（6 )不受外界環境的溼度所影響。 如第七圖所不’即揭示目前已知之微電子元件構裝結 構”中口亥陶竟基板（5 )係加工成一具有$六的方塊體， 5亥空八（5 〇 )之開口朝上，且於該空穴（5 0 )底面設 有圖案化之金屬線路，該金屬線路並延伸至該陶瓷基板 (5 )底面形成數外部接點，作為外部連接之用，其次將 晶片、(6 )黏著於該陶究基板（5 )之空穴（5 〇 )底面， 並透過打線接合方式使該晶片（6 )上的數接點與該金屬 線路電性連接，之後，以該m板（5)相對於空穴（5 0 )四周的堤牆頂面提供一金屬蓋板（7 )黏著其上，藉 1297201 以構成一微電子元件產品。 惟前揭微電子元件係利 屬此々从人 礼雄車父佳的陶瓷基板與金 屬板之、、、σ 0以期達到預定的氣 全屈柘#心 生然而’該陶莞基板與 金屬板間係利用膠體黏結而成， 女★ Α 在黏合的過程中，因該呈 有空穴的陶究基材形狀複口及具 聆壯P二 ^ 乂…疋形後，不易控制其 加工嗲基 金屬板對位黏著於該陶兗基板上的 工決差，以致無法有效地確 丨V、去d = U 彳政電子兀件產品都可 乂達到預期的氣密性，因此， .^ _ 二彳政電子兀件產品製成徭 仍舄，、生過粗漏、細漏等二道 寺、兀件乳岔性的檢測步驟，來篩 =不良的產導致該微電子Μ產品之生產成本居高 此外’前述之微電子元件構裝結構設計，因其陶究基 板之形狀複雜，為確保製成 " 用置制1 + j充暴板形狀正確，必須採 早顆“，’料每—微電子元件產品須製造出單個預定 心狀之陶£基板以及金屬板後，並在該㈣基板裝設晶片 ，後’再將一金屬板對位密封黏著於該陶竟基板上，亦即 :微電子元件必須採取一對一方式逐顆依序進行構裝製程 步驟’故而在構裝製程上存在有不易量產之缺點。 【發明内容】 士本發:之主要目的在於提供一種氣密微電子元件構裝 結構、，希藉設計，解決先前既有氣密微電子元件構裝結構 為達成前揭目的，本發明所提出之技術方案在於提供 一種氣密微電子元件構裝結構，其包括： 一平板狀陶瓷基板，其上設有一圖案化金屬線路自該 1297201 陶£基板上表面延伸至下表面； 該金IS晶片’係固設於該陶曼基板上表面，電性連接 一塑膠外芸，甘+ i 部黏著於該陶L板：Γ有一開口朝下的空穴，並以底 免基板上表面，該晶片位於該空穴内· “ Γ金屬氣密膜’至少成形於該外蓋外表面，以及談外 陶竞基板之接合部位’藉此構成一具氣密性的微電 點在微電子元件構裝結構設計，其特 體，再以且有“ 平板狀之陶竟基板作為晶片的載 片勺〜二一的塑膠外蓋黏著於該陶曼基板上，將晶 片包覆於内，雯推71 了曰曰 與陶竟基板點著…立;;被覆於該塑膠外蓋以及外蓋 絕佳之氣密:二：側的金屬氣密膜設計，使其可達成 部，使其具有良好 方法本了】：在於提供一種氣密微電子元件構裝 構之氣密微電可以量產方式製造具有前述構裝結 單顆製造，不易：：，解決先前既有氣密微電子元件僅能 +易里產之缺點。 -種電前：㈣，本發明所提出之技術方案在於提供 種竭電子疋件構裝方法，其步驟包括： 上規=1=::，係取"板狀陶莞基材，其 各成形有圖案化之金屬 1297201 提供塑膠基材之步驟，係取用一平板狀塑膠基材，其 底面成形有複數個呈矩陣排列且開口朝下的空穴，分別對 應於每一基板單元； 二晶片裝設於該陶莞基材之步驟，係將數晶片分別固設 於忒陶瓷基材之每一基板單元上表面，並與該金屬線路電 性連接; 將該塑膠基材對位黏著於陶变基材上之步驟，係將該 塑膠f材對㈣著於該Μ基材上，該些空穴分別對應- 基材：70 ’且每一基材單元上所設的晶片位於一空穴中； 弟一段切割步驟，係將黏設於該陶兗基材上的塑膠基 材切割成複數個分別對鹿一其 — —· …基板早兀大小的區塊狀塑膠外 ， 珉形金屬氣密膜之步 材外周面、該塑膠基材_陶二=于段於該塑朦基 Α ^ ^ ^ λ 匈是基材接合部位以及該陶瓷 基材上表面形成一金屬氣密膜； 以及第二段切割步驟，係沿該陶究基材上各基材單元 外圍切割成複數個各包括右曰 產品。 括有曰曰片及塑膠外蓋之微電子元件 點在由前述氣密微電子元件構裝方法設計，1特 點在於遠構裝方法係利用規劃有數 、，…、特 基材以及具有可塑性的塑膠美人凡之平板狀陶瓷 數個晶片裝設之用，再二二、、且° 可同時提供多 丹配合兩段式切割步 > 切割塑膠基材的成形金屬氣密膜等設計，使弟段 造出前揭氣密微電子元件之構裝結構，達到該元 1297201 氣密效果外，更進一步侈 且能確保每-元件產品^以量產方式進行構褒製造， 提彳ϋ 一馆_ 尺寸精確，產品品質穩定，進而 徒Α、一項較付合經濟性沾 而 卜 展性的氧密微電子元件構裝方法。 【貫施方式】 如弟一、二圖所示，车 ― 奘钍搂+ , 係揭不本發明氣密微電子元件構 裝結構之二較佳實施例，由圖 構 元件構裝結構係包括1 ’以氧擒微電子 无基板（1 )、至少-晶片（2 )、 (3)、以及一金屬氣密膜（4)，立中· 該陶竟基板⑴係一平板狀之板體，該陶究基板⑴ 设有一圖案化金屬線路’自該陶咖⑴之上表 面I伸至下表面’該金屬線路於該陶瓷基板（1 )上表面 成形有數内部接點，於下# +〜丄 1 、下表面成形有數外部接點，作為外 部連接之用。 該晶片（2 )可為石英晶片或其半導體晶片，且係固 設於該陶究基板（1)上表面，電性連接該金屬線路，該 設於陶究基板⑴上之晶片（2)s式及數量依該微電 子元件產品而定，如第_ Wi ύίτ ^ ^ 弟圖所不之較佳實施例中，該晶片 (2 )係以底面藉由膠體黏著於該陶瓷基板（丄）的上表 口亥曰日片（2 )上表面具有數接點，且各藉一 電性連接至該金屬線路相對應之内部接點，如第二圖所示 之#乂佳實施例中’該晶片（2 )係採取覆晶接合方式固設 於該陶竟基板（1 )上，其中該晶片（2 )之下表面具有 數接點，各接點分別設有一導電凸塊，並藉由該些導電凸 塊分別電性連接至該金屬線路相對應之内部接點。 1297201 ^ 該外蓋（3 )為塑膠材質製成的蓋體，其底部具有一 開朝下的空穴（3 1 )，並藉由膠體（如樹脂等）黏著 於”亥陶兗基板（1 )上表面，使該晶片（2 )位於該空穴 • ( 3 1 )内。 該金屬氣密膜（4 )至少成形於該外蓋（3 )外表面 以及該外蓋（3 )與該陶瓷基才反（1 )之接合部位，藉以 形成可阻隔外界空氣及水氣侵入該外蓋内部之氣密膜，於 ⑩本，佳實施例中，該陶兗基板（工）之板面面積略大於該 外羞（3 )底部面積，使該陶瓷基板（工）肖緣略凸伸出 射卜盍（3 )底部外側，該金屬氣密貞（4 )則成形於該 外蓋（3 )外表面、該外蓋（3 )與該陶莞基板（工）之 膠合部位以及該陶瓷基板（1 )上表面位於該外蓋（3 ) 外侧之部位。 ，前述之金屬氣密膜（4)可為單層金屬膜，或可為複 層式金屬膜構造，該金屬氣密膜（4)之膜厚依產品的設 φ計需要而設定，於本較佳實施例中，該金屬氣密膜（4) 係複層式金屬膜構造，使其具有增強氣密性之效果，該金 屬氣密膜（4)係'包括-銅膜位於内！，以及一銅鎳合金 膜位於外層。 本發明氣密微電子元件藉由前揭構裝結構，即可達到 預期的氣密效果，I外部空氣或水氣不致侵入該元件内部 而影響該元件中晶片的正常運作，使該微電子元件產品不 僅可以符合測試標準的要求’更具有絕佳的產品可靠度。 尚使其可以量 此外’本發明透過前述構裝結構設計 1297201 方式進行構裝製造，如第三圖及第四圖A〜F所示，其 構裝方法係包括： 提供陶瓷基材（1 〇 )之步驟，係取用一平板狀之陶 瓷基材，其上規劃有複數個呈矩陣排列的基板單元（丄2 ) —(如第五圖所示者），相鄰基板單元（i 2 )間預留有切 剎道’且每一基板單元（丄2)上各成形有圖案化之金屬 線路’自其上表面延伸至下表面； 提供塑膠基材（3 〇 )之步驟，係取用一預定厚度之 平板狀塑膠基材，其底面成形有複數個呈矩陣排列且開口 朝下，空穴（3 1 如第六圖所示者）’分別對應於每一 基板單元（1 2 )，每一空穴（3工）周邊具有側壁； 晶片（2 )裝設於該陶瓷基材（i 〇 )之步驟，係將 數晶片（2 )分別固設於該陶瓷基材（丄〇 )之每一基板 單元上表面，與其上之金屬線路電性連接（如第四圖β 所示），在此步驟中，該此曰η广〇、π # , Μ ι日日片（2)可藉由膠體黏著於 每一基板單元上表面，再利用打線接合手段使晶片（2) 上之每一接點與該金屬線路相對應之接點電性連接； 者，該些晶片亦可利用覆晶接合方式固設於每一基板單： 之上表面’並藉其晶片下表面預設的導電凸塊直接與= 屬線路相對應之接點電性連接（圖未示）； 一 將該塑膠基材（3 對位黏著於陶竟基材 上之步驟，如第四圖C所示，其係將該塑勝基 以其空六（3 1 )朝下之方式藉由膠體 甘』二，1 η、 ，士 ㈣#於該陶奢 基材（10)上表面，且使該些空穴（31)分別對應一 1297201 基材單元，讓每一基材單元上所設的晶片（2 )位於一空 穴（3 1 )中； 第一段切割步驟，如第四圖D所示，係透過切割刀具 將黏設於該陶瓷基材（1 〇 )上的塑膠基材（3 〇 )切割 成複數個分別對應一基板單元外圍形狀的區塊狀塑膠外蓋 (3 )； 成形金屬氣密膜（4 )之步驟，如第四圖e所示，係 透過濺鍍、電鍍或其結合之成形手段於該塑膠基材（3 〇 ) 外周面、該塑膠基材（3 〇 )與該陶瓷基材（丄〇 )接合 邻位以及”亥陶瓷基材（1 〇 )上表面形成一金屬氣密膜， 於成形該金屬氣密膜（4 )步驟之操作過程中，可依實際 操作之需要將其倒置進行，於本較佳實施例中，該成形2 屬氣密膜（4 )步驟包括有二階段㈣，首先係以_手 段於該塑膠基材外周面、該塑膠基材與該陶兗基材接合部 位以及該陶瓷基材上成形成一層第一金屬貞，接續以電鍍 手段於該第-金屬膜外表面成形—第二金屬膜，前述第一 金屬膜可為鋼膜，第二今屬瞄 乐一金屬Μ可為鋼鎳合金膜，藉此二金 屬膜之複合構造，使其形成-氣密性絕佳之金屬氣密膜； 以及第二段切割步驟，如第四圖f所示，係透過 刀具沿該μ基材（1Qu各基材單元外圍之切割心 =复數塊陶曼基板（1)，且每—塊陶究基板⑴上 11 1297201 ^底部的㈣基板（1)相對於塑 具有凸伸段’其上且被覆有金屬氣密膜（4))外周緣 本發明藉由前述氣密微電子 可以達到元件預定之氣密效果，使 又计，不僅 裝’並可確保每一元件產品之尺寸精：=產：式進行構 符合經濟性的氣密微電子元件構裝方法。而棱供-項較 【圖式簡單說明】 第-圖係本發明氣密微電子元件構裝結構之一較佳· 施例之平面示意圖。 貝 第二圖係本發明氣密微電子元件構裝結構之 貫施例之平面示意圖。 佳 圖第三、四圖係本發明氣密微電子元件構裝方法之流程 第五圖係本發明氣密微電子元件構裝方法使用之 基材俯視平面示意圖。 第六圖係本發明氣密微電子元件構裝方法使用之塑膠 基材仰視平面示意圖。 ^ 第七圖係先前既有氣密微電子元件構裝結構示意圖。 【主要元件符號說明】 (1 )陶瓷基板 （1 〇 )陶瓷基材 (1 2 )基板單元 (2 )晶片 (3 )外蓋 （3 0 )塑膠基材 (3 1 )空穴 12 12972011297201 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for constructing a microelectronic component, a special eight-dimensional and a gas-based microelectronic component. The design. [Prior Art] At present, the design of agro-structures such as quartz oscillators, MEMS components, system integrated packaging (SiP) using metal covers, etc., requires consideration of long-term product reliability and good air tightness. It can ensure the stability of the operation of the microelectronic components. In order to make the aforementioned microelectronic components have good airtightness, the structure of one component is formed by using a ceramic substrate (5), the microelectronic component wafer (6), a support base, as shown in the seventh figure, and then The metal cover (7) is adhesively sealed to achieve a gas-tight effect 'to prevent the wafer (6) sealed inside from being affected by the humidity of the external environment. As shown in the seventh figure, the structure of the currently known microelectronic component is disclosed. The middle plate (5) is processed into a block having $6, and the opening of the 5th (5 〇) is upward. And a patterned metal line is disposed on the bottom surface of the hole (50), and the metal line extends to the bottom surface of the ceramic substrate (5) to form a plurality of external contacts for external connection, and secondly, the wafer, (6) Adhering to the bottom surface of the hole (5 〇) of the ceramic substrate (5), and electrically connecting the number of contacts on the wafer (6) to the metal line by wire bonding, and then using the m plate ( 5) A metal cover plate (7) is adhered to the top surface of the embankment wall around the cavity (50), and 1929201 is used to constitute a microelectronic component product. Ren Lixiong's ceramic substrate and metal plate, and σ 0 in order to achieve the predetermined gas full flexion #心生 However, the pottery substrate and the metal plate are made of colloidal bonding, female ★ Α In the process of bonding, due to the shape of the ceramic substrate with holes, it has a diaper and has a strong P ^ 乂 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋To achieve the expected air tightness, therefore, .^ _ 彳 彳 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀The production cost of the microelectronics product is high. In addition, the aforementioned microelectronic component structure design is complicated by the shape of the ceramic substrate, in order to ensure that it is made into a shape of 1 + j. Correctly, it is necessary to take early "," material-microelectronic component products must be manufactured with a single predetermined heart-shaped ceramic substrate and metal plate, and the wafer is mounted on the (four) substrate, and then a metal plate is aligned. The sealing is adhered to the ceramic substrate, that is, the microelectronic components must be sequentially and sequentially arranged in a one-to-one manner. Therefore, there is a disadvantage that the manufacturing process is difficult to mass-produce. SUMMARY OF THE INVENTION The main purpose of the present invention is to provide a gas-tight microelectronic component structure, and to design a solution to solve the previously existing airtight microelectronic component structure. The technical solution is to provide a hermetic microelectronic component structure, comprising: a flat ceramic substrate having a patterned metal line extending from the upper surface of the 1297201 substrate to the lower surface; the gold IS wafer The system is fixed on the upper surface of the Tauman substrate, electrically connected to a plastic outer cymbal, and the gan+i portion is adhered to the ceramic L plate: the cymbal has a cavity with an opening facing downward, and the bottom surface of the substrate is removed from the bottom. In the cavity, the "silicone gas-tight film" is formed at least on the outer surface of the outer cover, and the joint portion of the outer ceramic substrate, thereby forming a gas-tight micro-electric point in the microelectronic component structure design. The special body, and then there is a "flat-shaped ceramic substrate as a wafer carrier spoon ~ 21 plastic cover attached to the Tauman substrate, the wafer is wrapped inside, Wen push 71 曰曰Ceramic substrate Covered with the outer cover of the plastic and the outer cover of the airtight seal: two: the side of the metal gas-tight membrane design, so that it can be achieved, so that it has a good method]: to provide a gas-tight The gas-tight micro-electricity of the microelectronic component structure can be manufactured in a mass production manner with the above-mentioned structure, and it is not easy to:: solve the disadvantage that the prior air-tight microelectronic component can only be produced by Eli. - Pre-Electrical: (4), the technical solution proposed by the present invention is to provide a method for constructing an exhaust electronic component, the steps of which include: upper gauge = 1 =::, is taken " plate-shaped ceramic base material, each formed with The patterned metal 1297201 provides a plastic substrate step by using a flat plastic substrate having a plurality of holes arranged in a matrix and having openings facing downwards, corresponding to each substrate unit; In the step of the base material of the ceramics, the plurality of wafers are respectively fixed on the upper surface of each substrate unit of the enamel ceramic substrate, and electrically connected to the metal line; the plastic substrate is aligned to the ceramic substrate In the above step, the plastic material f is placed on the crucible substrate, and the holes respectively correspond to the substrate: 70' and the wafer provided on each substrate unit is located in a cavity; The cutting step is to cut the plastic substrate adhered to the ceramic substrate into a plurality of block-shaped plastics which are respectively different from the surface of the deer-shaped substrate, and the step of the metal-shaped gas-tight film. Outer surface of the material, the plastic substrate_陶二=于段于塑朦基Α ^ ^ ^ λ Hung is a metal joint film on the substrate joint portion and the upper surface of the ceramic substrate; and a second step of cutting along the periphery of each substrate unit on the ceramic substrate Each includes a right-hand product. The microelectronic component including the cymbal and the plastic cover is designed by the above-mentioned airtight microelectronic component assembly method, and the feature is that the remote assembly method utilizes a number of plans, ..., a special substrate, and a plasticity plasticity. The beauty of the flat ceramics for several wafer installations, and then 22, and at the same time can provide Dodan with two-stage cutting steps> cutting plastic substrate forming metal film and other design, so that The structure of the front-secret airtight microelectronic components is created to achieve the airtight effect of the element 1297201, and furthermore, it can ensure that each component product is manufactured in a mass production manner, and the building is _ size Accurate, stable product quality, and then a more economical and economical combination of oxygen microelectronic components. [Comprehensive application method] As shown in the first and second figures of the brothers, the car-奘钍搂+ is a preferred embodiment of the airtight microelectronic component assembly structure of the present invention, and the structure component structure includes 1 'Oxygen-based microelectronics without substrate (1), at least - wafer (2), (3), and a metal-tight film (4), Lizhong · The ceramic substrate (1) is a flat plate body, The ceramic substrate (1) is provided with a patterned metal line 'extending from the upper surface I of the ceramic coffee (1) to the lower surface'. The metal circuit is formed with a plurality of internal contacts on the upper surface of the ceramic substrate (1), under #+~丄1. The lower surface is formed with a number of external contacts for external connection. The wafer (2) may be a quartz wafer or a semiconductor wafer thereof, and is fixed on the upper surface of the ceramic substrate (1), electrically connected to the metal wiring, and the wafer (2) s disposed on the ceramic substrate (1) The type and the quantity depend on the microelectronic component product. In the preferred embodiment of the first embodiment, the wafer (2) is adhered to the ceramic substrate by a colloid on the bottom surface. The upper surface of the upper surface has a plurality of contacts on the upper surface, and each of them is electrically connected to the corresponding internal contact of the metal line, as shown in the second figure. The wafer (2) is fixed on the ceramic substrate (1) by a flip chip bonding method, wherein the lower surface of the wafer (2) has a plurality of contacts, and each of the contacts is respectively provided with a conductive bump, and The conductive bumps are electrically connected to corresponding internal contacts of the metal line. 1297201 ^ The cover (3) is a cover made of plastic material, and has a hole (3 1 ) facing downward at the bottom thereof, and is adhered to the "Hai Tao" substrate by a colloid (such as resin). The upper surface is such that the wafer (2) is located in the cavity (3 1 ). The metal gastight film (4) is formed at least on the outer surface of the outer cover (3) and the outer cover (3) and the ceramic The joint portion of the base (1) is formed to form an airtight film that can block the outside air and moisture from entering the inside of the outer cover. In the preferred embodiment, the surface area of the ceramic substrate (work) is slightly The surface area of the outer surface of the outer surface of the outer cover (3) is formed on the outer surface of the outer cover (3) by the outer edge of the outer surface of the outer cover (3). a bonding portion of the outer cover (3) and the ceramic substrate, and an upper surface of the ceramic substrate (1) located outside the outer cover (3). The metal inner film (4) may be The single-layer metal film may be a multi-layer metal film structure, and the film thickness of the metal gas-tight film (4) is set according to the φ of the product. In a preferred embodiment, the metal-tight film (4) is a multi-layered metal film structure having an effect of enhancing airtightness, and the metal-tight film (4) is comprised of a copper film located inside! And a copper-nickel alloy film is located on the outer layer. The gas-tight microelectronic component of the invention can achieve the desired airtight effect by the pre-exposed structure, and the external air or moisture does not invade the inside of the component and affect the wafer in the component. The normal operation makes the microelectronic component product not only meet the requirements of the test standard, but also has excellent product reliability. It can also be used in addition to the invention. The invention is constructed and manufactured by the above-mentioned structure design 1297201, such as The third figure and the fourth figure A to F show that the method comprises the steps of: providing a ceramic substrate (1 〇), and adopting a flat ceramic substrate on which a plurality of matrixes are planned. Arranged substrate unit (丄2) - (as shown in the fifth figure), a cutting brake is reserved between adjacent substrate units (i 2 ) and each substrate unit (丄2) is patterned The metal line ' extends from its upper surface to The lower surface; the step of providing a plastic substrate (3 〇) is to take a flat plastic substrate of a predetermined thickness, the bottom surface of which is formed with a plurality of matrix arrays with openings facing downwards, and holes (3 1 as shown in the sixth figure) Illustrated as 'each corresponding to each substrate unit (1 2 ), each hole (3 work) has a side wall; the wafer (2) is mounted on the ceramic substrate (i 〇) step, the number of wafers (2) respectively fixed on the upper surface of each substrate unit of the ceramic substrate (丄〇), electrically connected to the metal line thereon (as shown in the fourth figure β), in this step, the 曰η The 〇 〇, π # , ι ι 日 (2) can be adhered to the upper surface of each substrate unit by a colloid, and then each joint on the wafer (2) is associated with the metal line by wire bonding. The contacts are electrically connected; the wafers may also be fixed on each substrate by flip chip bonding: the upper surface 'and the conductive bumps preset by the lower surface of the wafer directly correspond to the = line Contact electrical connection (not shown); one of the plastic substrate (3 alignment adhered to Tao Jing The step on the substrate, as shown in the fourth figure C, is to use the colloidal body, the ginseng, and the hexagram, in the manner of the empty six (3 1 ) downwards. The upper surface of the substrate (10), and the holes (31) respectively correspond to a 1297201 substrate unit, so that the wafer (2) provided on each substrate unit is located in a hole (3 1 ); The segment cutting step, as shown in FIG. 4D, cuts the plastic substrate (3 〇) adhered to the ceramic substrate (1 〇) into a plurality of regions respectively corresponding to the peripheral shape of a substrate unit through a cutting tool. The block plastic outer cover (3); the step of forming the metal gastight film (4), as shown in the fourth figure e, is formed by sputtering, electroplating or a combination thereof on the outer periphery of the plastic substrate (3 〇) The surface of the plastic substrate (3 〇) is bonded to the ceramic substrate (丄〇) and a metal-tight film is formed on the upper surface of the ceramic substrate (1 〇) to form the metal gas-tight film (4). During the operation of the step, it can be inverted according to the actual operation. In the preferred embodiment, the formed 2 is a gas-tight film (4) The step includes two stages (four), firstly forming a first metal crucible on the outer peripheral surface of the plastic substrate, the joint portion of the plastic substrate and the ceramic substrate, and the ceramic substrate, followed by electroplating The second metal film is formed on the outer surface of the first metal film, the first metal film may be a steel film, and the second metal film may be a steel nickel alloy film, thereby forming a composite structure of the two metal films. , forming a gas tight film with excellent air tightness; and a second cutting step, as shown in the fourth figure f, passing through the cutting tool along the μ substrate (the cutting core of each of the 1Qu substrate units = a plurality of Tauman substrates (1), and each of the blocks (1) on the substrate (1) 11 1297201 ^ at the bottom of the (four) substrate (1) with respect to the plastic with a protruding section 'on which is covered with a metal gastight film (4)) outer periphery According to the invention, the airtight microelectronics can achieve the predetermined airtight effect of the component, and the meter can be used to ensure not only the size of each component but also the quality of each component: Electronic component assembly method. The rib supply-item comparison [Simplified description of the drawings] The first-figure is a schematic plan view of a preferred embodiment of the hermetic microelectronic component structure of the present invention. The second figure is a schematic plan view of a consistent embodiment of the hermetic microelectronic component structure of the present invention. The third and fourth figures are the flow of the method for constructing the hermetic microelectronic component of the present invention. The fifth figure is a schematic plan view of the substrate used in the method for constructing the hermetic microelectronic component of the present invention. Fig. 6 is a bottom plan view showing the plastic substrate used in the airtight microelectronic component mounting method of the present invention. ^ The seventh figure is a schematic diagram of the structure of the previously existing airtight microelectronic components. [Description of main component symbols] (1) Ceramic substrate (1 〇) ceramic substrate (1 2 ) Substrate unit (2) Wafer (3) Cover (3 0) Plastic substrate (3 1 ) Hole 12 1297201
(4 )金屬氣密膜 (5 )陶瓷基板 （5 0 )空穴 (6 )晶片 (7 )金屬蓋板(4) Metal-tight film (5) Ceramic substrate (50) Hole (6) Wafer (7) Metal cover