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TWI245379B - Semiconductor device and method for manufacturing same - Google Patents

Semiconductor device and method for manufacturing same
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Publication number
TWI245379B
TWI245379BTW093114055ATW93114055ATWI245379BTW I245379 BTWI245379 BTW I245379BTW 093114055 ATW093114055 ATW 093114055ATW 93114055 ATW93114055 ATW 93114055ATW I245379 BTWI245379 BTW I245379B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
manufacturing same
manufacturing
same
semiconductor
Prior art date
Application number
TW093114055A
Other languages
Chinese (zh)
Inventor
Yukihiro Takao
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric CofiledCriticalSanyo Electric Co
Priority to TW093114055ApriorityCriticalpatent/TWI245379B/en
Application grantedgrantedCritical
Publication of TWI245379BpublicationCriticalpatent/TWI245379B/en

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TW093114055A2004-05-192004-05-19Semiconductor device and method for manufacturing sameTWI245379B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
TW093114055ATWI245379B (en)2004-05-192004-05-19Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
TW093114055ATWI245379B (en)2004-05-192004-05-19Semiconductor device and method for manufacturing same

Publications (1)

Publication NumberPublication Date
TWI245379Btrue TWI245379B (en)2005-12-11

Family

ID=37190086

Family Applications (1)

Application NumberTitlePriority DateFiling Date
TW093114055ATWI245379B (en)2004-05-192004-05-19Semiconductor device and method for manufacturing same

Country Status (1)

CountryLink
TW (1)TWI245379B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8404587B2 (en)2008-06-192013-03-26Micro Technology, Inc.Semiconductor with through-substrate interconnect
US8907457B2 (en)2010-02-082014-12-09Micron Technology, Inc.Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US9799562B2 (en)2009-08-212017-10-24Micron Technology, Inc.Vias and conductive routing layers in semiconductor substrates
CN113539946A (en)*2020-04-162021-10-22长鑫存储技术有限公司Semiconductor structure and forming method thereof
CN114336275A (en)*2022-03-152022-04-12度亘激光技术(苏州)有限公司Manufacturing method of electrode contact window and preparation method of semiconductor device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US10734272B2 (en)2008-06-192020-08-04Micron Technology, Inc.Semiconductor with through-substrate interconnect
US11978656B2 (en)2008-06-192024-05-07Micron Technology, Inc.Semiconductor with through-substrate interconnect
TWI495071B (en)*2008-06-192015-08-01Micron Technology Inc Semiconductor with interconnected substrate interconnection
US9099457B2 (en)2008-06-192015-08-04Micron Technology, Inc.Semiconductor with through-substrate interconnect
US9514975B2 (en)2008-06-192016-12-06Micron Technology, Inc.Semiconductor with through-substrate interconnect
US9917002B2 (en)2008-06-192018-03-13Micron Technology, Inc.Semiconductor with through-substrate interconnect
US8404587B2 (en)2008-06-192013-03-26Micro Technology, Inc.Semiconductor with through-substrate interconnect
US9799562B2 (en)2009-08-212017-10-24Micron Technology, Inc.Vias and conductive routing layers in semiconductor substrates
US10600689B2 (en)2009-08-212020-03-24Micron Technology, Inc.Vias and conductive routing layers in semiconductor substrates
US10685878B2 (en)2010-02-082020-06-16Micron Technology, Inc.Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US11527436B2 (en)2010-02-082022-12-13Micron Technology, Inc.Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US8907457B2 (en)2010-02-082014-12-09Micron Technology, Inc.Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US12368096B2 (en)2010-02-082025-07-22Lodestar Licensing Group LlcMicroelectronic devices with through-substrate interconnects and associated methods of manufacturing
CN113539946A (en)*2020-04-162021-10-22长鑫存储技术有限公司Semiconductor structure and forming method thereof
US12033920B2 (en)2020-04-162024-07-09Changxin Memory Technologies, Inc.Semiconductor structure and formation method thereof
CN114336275A (en)*2022-03-152022-04-12度亘激光技术(苏州)有限公司Manufacturing method of electrode contact window and preparation method of semiconductor device
CN114336275B (en)*2022-03-152023-02-21度亘激光技术(苏州)有限公司Manufacturing method of electrode contact window and preparation method of semiconductor device

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DateCodeTitleDescription
MM4AAnnulment or lapse of patent due to non-payment of fees

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