1231371 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種垂直式彈性探針及附壓力感測器之晶 圓級垂直式針測卡，特別係關於一種可應用於量測具有高 密度接腳之電路元件之垂直式彈性探針及及附壓力感測器 之晶圓級垂直式針測卡。 【先前技術】 目前電子產品之功能不斷提升’朝向高容量及高密度接 腳之技術演進。積體電路之測試技術亦不斷地改進以達成 這些需求，因而有許多新穎的晶圓級構裝技術被開發出 來。以往積體電路之測試都是採用鈹銅合金或鶴合金構成 的探針來接觸晶片上的金屬焊墊’當測試之金屬焊墊數目 較少及各金屬焊塑*的間隔距離較大時’這種合金探針尚可 達到測試要求（參考·· R· Isc〇ff，"What’s in the cards for wafer probing"， Semiconduct· Int，1994, pp· 76)。然而’當積體電路之金屬知塾的 尺寸與間隔距離愈來愈小’或欲進行晶圓級或多顆粒式積 體電路晶片之測試時’採用鈹銅合金或鎢合金探針的針測 卡，在針距及空間的安排分佈時遭遇到極大的困難。 目前研究人員以微機電製程或積體電路製程’在陶瓷基 板或石夕基板的表面形成微懸臂探針’並於微懸臂探針正下 方之基板挖凹槽以避開懸臂與基板發生干涉（參考：Koji SoeJima，Mitsuru Kimura，Yuzo Shimada and Shintaro Aoyama，’’New Probe Microstructure for Full-Wafer, Contact-probe Cardsf,5 IEEE (1999) Electronic Compoent and Technology Conference )。然而，基板之凹槽易於堆1231371 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a vertical-type elastic probe and a wafer-level vertical probe card with a pressure sensor, and particularly relates to a kind of high-level probe card that can be applied to measurement. Vertical elastic probes for density pin circuit components and wafer-level vertical probe cards with pressure sensors. [Previous technology] At present, the functions of electronic products are continuously improved 'towards the technology evolution of high-capacity and high-density pins. The testing technology of integrated circuits has also been continuously improved to meet these requirements, and many novel wafer-level packaging technologies have been developed. In the past, the testing of integrated circuits used probes made of beryllium copper alloy or crane alloy to contact the metal pads on the wafer. 'When the number of metal pads tested is small and the distance between each metal welding plastic is large' This alloy probe can still meet the test requirements (refer to R. Iscoff, "What's in the cards for wafer probing", Semiconduct · Int, 1994, pp. 76). However, 'when the size and separation distance of the metal chip of the integrated circuit is getting smaller and smaller' or the wafer-level or multi-grain integrated circuit chip test is to be performed ', the pin test with beryllium copper alloy or tungsten alloy probe Card, encountered great difficulties in the distribution of needle pitch and space. At present, researchers use a micro-electro-mechanical process or an integrated circuit process to 'form a micro cantilever probe on the surface of a ceramic substrate or a stone substrate' and dig a groove on the substrate directly below the micro cantilever probe to avoid interference between the cantilever and the substrate ( Reference: Koji SoeJima, Mitsuru Kimura, Yuzo Shimada and Shintaro Aoyama, `` New Probe Microstructure for Full-Wafer, Contact-probe Cardsf, 5 IEEE (1999) Electronic Compoent and Technology Conference). However, the grooves of the substrate are easy to pile
H:\HU\HYG\林君明\89878\89878.DOC 1231371 積毛屑污穢物且極不易於清潔，影響了探針的正常彈性與 導電功能。另一方面電氣訊號通路需拉至位於基板外圍的 測試儀器，導致傳導路徑過長，而引起雜訊干擾效應。此 外，傳導路徑過長在高頻測試上也會產生阻抗匹配問題。 再者，微懸臂探針之長度均數倍於金屬焊墊，佔用*間 較多而無法形成高密度矩陣。由於微懸臂探針之彎曲係以 支點為中心並形成為弧線，導致接觸模式無法固定在焊墊 上某一定點而形成一條滑移線段，易於刮起金屬焊墊的表 面金屬或氧化物而黏附探針頭，導致接觸阻抗不穩定。更 甚者，被測物金屬焊墊的表面中心處亦會受到一定程度之 破壞’降低後續封裝製程引線接合的強度，因而產生可靠 度問題。 【發明内容】 本發明之主要目的係提供一種可應用於量測具有高密度 接腳之電路元件之垂直式彈性探針及附壓力感測器之晶圓 級垂直式針測卡。 為達成上述目的，本發明揭示一種垂直式彈性探針，其 包含一基板、一设置於該基板上之探針基座、一設置於該 探針基座上之針測部、一環繞該探針基座之保護層以及一 設置於該保護層内部之接地金屬方管。該基板係由矽或陶 瓷構成，且包含一設置於該探針基座下方之導電金屬通 道。該針測部包含一設置於該探針基座上之本體，以及一 連接於該本體之環狀尖錐。 該探針基座包含一設置於該基板表面之第一金屬層、一 H:\HU\HYG\ 林君明\89878\89878.DOC -6- 1231371 第二金屬層、設置於該第一金屬層及該第二金屬層間之一 第一彈性層及一第二彈性層、二層設置於該第一彈性層及 該第二彈性層間之第三金屬層以及二電氣連接該第一金屬 層、該第二金屬層及該第三金屬層之金屬柱。 本發明之附壓力感測器之晶圓級垂直式針測卡包含一基 板、複數個設置於該基板上之針測單元、複數個設置於該 基板外圍或中央之外力感測器。該針測單元包含至少一垂 直式彈性探針，且該附壓力感測器之晶圓級垂直式針測卡 垂直式針測卡另包含一環繞該垂直式彈性探針之保護層以 及一設置於該保護層内部且環繞該垂直式彈性探針之接地 金屬方管。 【實施方式】 圖1及圖2例示本發明之垂直式彈性探針丨〇，其中該垂 直式彈性探針10可用於檢測一積體電路元件之電氣特性。 如圖1所示，該垂直式彈性探針10包含一基板20、一設置 於该基板20上之探針基座3〇、一設置於該探針基座3〇上 之針測部50、一環繞該探針基座3〇之保護層6〇以及一設 置於該保護層60内部之接地金屬方管62。該針測部5〇包 含一設置於該探針基座3〇上之本體52以及一連接於該本 體52之環狀尖錐54。該本體52係以鎳等硬金屬構成，而 該環狀尖錐54則以鎢金屬構成且其係採中空設計以增加接 觸訊號墊（或焊球）的穩定性。 該基板20係由矽或陶瓷構成，且包含一設置於該探針基 座下方由銘、鋼或鎢等材質構成之導電金屬通道22。此H: \ HU \ HYG \ 林君明 \ 89878 \ 89878.DOC 1231371 Fouling and dirt are difficult to clean, which affects the normal elasticity and conductivity of the probe. On the other hand, the electrical signal path needs to be pulled to the test instrument located on the periphery of the substrate, which causes the conduction path to be too long and causes noise interference effects. In addition, long conduction paths can cause impedance matching problems at high frequencies. In addition, the length of the microcantilever probe is several times longer than that of the metal pad, which takes up a lot of space and cannot form a high-density matrix. Because the bending of the cantilever probe is centered on the fulcrum and formed as an arc, the contact mode cannot be fixed at a certain point on the pad to form a slip line segment, which is easy to scratch the surface metal or oxide of the metal pad and adhere to the probe. Needle, resulting in unstable contact impedance. What's more, the surface center of the metal pad of the test object will also be damaged to a certain degree, which reduces the strength of the wire bonding in the subsequent packaging process, thereby causing reliability problems. [Summary of the Invention] The main object of the present invention is to provide a vertical elastic probe which can be used for measuring circuit elements with high-density pins and a wafer-level vertical probe card with a pressure sensor. In order to achieve the above object, the present invention discloses a vertical elastic probe, which includes a substrate, a probe base provided on the substrate, a needle measuring portion provided on the probe base, and a probe surrounding the probe. The protective layer of the needle base and a grounded metal square tube disposed inside the protective layer. The substrate is made of silicon or ceramic, and includes a conductive metal channel disposed below the probe base. The stylus includes a body provided on the probe base, and a ring-shaped pointed cone connected to the body. The probe base includes a first metal layer disposed on the surface of the substrate, a H: \ HU \ HYG \ 林君明 \ 89878 \ 89878.DOC -6- 1231371 a second metal layer, and the first metal layer and A first elastic layer and a second elastic layer between the second metal layers, two third metal layers disposed between the first elastic layer and the second elastic layer, and two electrically connecting the first metal layer, the first Two metal layers and metal pillars of the third metal layer. The wafer-level vertical stylus card with a pressure sensor of the present invention includes a base plate, a plurality of stylus units disposed on the substrate, and a plurality of force sensors disposed outside or at the center of the substrate. The stylus unit includes at least one vertical elastic probe, and the wafer-level vertical stylus card with a pressure sensor includes a protective layer surrounding the vertical stylus and a setting. A grounded metal square tube inside the protective layer and surrounding the vertical elastic probe. [Embodiment] Figs. 1 and 2 illustrate a vertical elastic probe of the present invention, wherein the vertical elastic probe 10 can be used to detect the electrical characteristics of a integrated circuit element. As shown in FIG. 1, the vertical elastic probe 10 includes a base plate 20, a probe base 30 provided on the base plate 20, a needle measuring portion 50 provided on the probe base 30, A protective layer 60 surrounding the probe base 30 and a grounded metal square tube 62 disposed inside the protective layer 60. The needle measuring section 50 includes a main body 52 provided on the probe base 30 and a ring-shaped sharp cone 54 connected to the main body 52. The body 52 is made of hard metal such as nickel, and the ring-shaped cone 54 is made of tungsten metal, and it is hollow to increase the stability of the contact signal pad (or solder ball). The substrate 20 is made of silicon or ceramic, and includes a conductive metal channel 22 made of a material such as metal, steel, or tungsten disposed below the probe base. this
H:\HU\HYGVf^ 苕明\89878\89878.DOC 1231371 h罗—基板2〇除了該導電金屬通道22以外之上、下表面 二—層由一氧化矽構成之絕緣層24。在該導電金屬通 ^ >下方具有一金屬凸塊26,用以輸入/輸出電氣訊號。 、” I層60係以聚亞醯氨（p〇lyimide)、苯環丁烯（BCB) ^ 低；I電书數物質構成，可加強該探針基座3〇之絕緣 與牢=性，並均勻化探針與待測焊塾的接觸力。該接地金 、$ 62可降低或隔離探針之間的交連效應以提高該垂直 式彈性探針1 0之工作頻率。 如圖2所示，該探針基座3〇包含一設置於該基板2〇表 面之第一金屬層32、一承載該針測部5〇之第二金屬層34、 設置於該第一金屬$ 32及該第二金屬^ 34間之一第一彈 性層40及一第二彈性層42、二層設置於該第一彈性層仞 及該第二彈性層42間之第三金屬層36以及電氣連接該第 一金屬層32、該第二金屬層34及該第三金屬層刊之二金 屬柱38。該第一金屬層32係呈矩形，且電氣連接於該基板 2〇中之金屬導電通道22〇該第二金屬層34係呈矩形，且 橋接其兩端之金屬柱38而形成一 Η結構。該第三金屬層 36之間係一連接該第一彈性層4〇及該第二彈性層42之連 接部44。該第三金屬層36及該連接部料係呈矩形，且鑲 提於該第一彈性層40及該第二彈性層42之間。該第三金 屬層36之二側邊係分別連接於其二侧之金屬柱38，可用以 電性阻抗之匹配及將來自該針測部50之外力向該第一層彈 性層40傳遞。該第一彈性層40、該第二彈性層42及哕連 接部44係由聚亞醯氨或苯環丁烯構成，用以提供該針測部 HAHLAHYGVf^君明\89878\89878. DOC. 1231371 50接觸待測物之彈性收縮。 圖3及圖4例示本發明之壓力感測用垂直式彈性探針 00其中5亥垂直式彈性探針1 可用以檢測施加於該針測 部50之外力。該壓力感測用垂直式彈性探針1〇〇包含一基 板20、一設置於該基板2〇上之探針基座、一設置於該 探針基座30上之針測部5〇以及一環繞該探針基座3〇之保 濩層60。该基板2〇包含一凹槽122及一設置於該探針基座 3〇及該凹槽122間之外力感測層13〇。該外力感測層130 包含四條矩形壓阻128A、128B、128C及128D，其中該矩 形壓阻係由一多晶矽植入三價硼離子而形成，並分別以二 金屬接線電氣連接至外部。例如，該矩形壓阻128C係由二 金屬接線132A、132B及設置於該基板20内部之金屬導電 通道22A、22B電氣連接至該基板2〇下表面之焊球26八、 26B 〇 、‘ 外力細*加於該針測部5 0時，該外力將經由該探針基 座30傳遞至該基板2〇内部之外力感測層丨3〇，導致該外力 感測層130中的兩條壓阻128C及128D拉長變窄而導致電 阻值增加，另兩條壓阻128A及128B則為縮短變寬而導致 電阻值減少。當一電壓訊號經由該金屬凸塊26A、導電金 屬通道22A及金屬接線132A而通過該矩形壓阻128c，再 纽由另一金屬接線132B、導電金屬通道22B及金屬凸塊 26B而輸出。將該四條矩形壓阻i28A、128b、128c及128〇 兩兩串聯再並聯以形成一橋式電路，取出習知的橋式電路 輸出端之輸出電壓，即可推算施加於該針測部50之外力大H: \ HU \ HYGVf ^ 苕 明 \ 89878 \ 89878.DOC 1231371 h Luo-substrate 20 except the conductive metal channel 22 above and below the surface two-layer insulation layer 24 made of silicon monoxide. A metal bump 26 is provided under the conductive metal channel for inputting / outputting electrical signals. The "I layer 60" is made of polyimide and BCB. It is composed of a number of materials, which can strengthen the insulation and fastness of the probe base 30. And the contact force between the probe and the welding pad to be tested is uniformized. The grounded gold and $ 62 can reduce or isolate the cross-linking effect between the probes to increase the operating frequency of the vertical elastic probe 10. As shown in Figure 2 The probe base 30 includes a first metal layer 32 provided on the surface of the substrate 20, a second metal layer 34 carrying the probe 50, a first metal $ 32, and the first metal layer 32. A first elastic layer 40 and a second elastic layer 42 between two metals ^ 34, two third metal layers 36 disposed between the first elastic layer 仞 and the second elastic layer 42, and electrically connecting the first The metal layer 32, the second metal layer 34, and the second metal pillar 38 of the third metal layer. The first metal layer 32 is rectangular and is electrically connected to the metal conductive channel 22 in the substrate 20. The two metal layers 34 are rectangular, and bridge the metal pillars 38 at both ends to form a structure. A connection between the third metal layer 36 and the first spring is provided. The layer 40 and the connecting portion 44 of the second elastic layer 42. The third metal layer 36 and the connecting portion are rectangular, and are mounted between the first elastic layer 40 and the second elastic layer 42. The two sides of the third metal layer 36 are respectively connected to the metal pillars 38 on the two sides thereof, which can be used for electrical impedance matching and transmitting the force from the probe 50 to the first elastic layer 40. The first elastic layer 40, the second elastic layer 42 and the cymbal connecting portion 44 are composed of polyimide or phenylcyclobutene, and are used to provide the needle measuring portion HAHLAHYGVf ^ Junming \ 89878 \ 89878. DOC. 1231371 50 The elastic contraction upon contact with the object to be tested. Figures 3 and 4 illustrate the vertical elastic probe 00 for pressure sensing of the present invention, among which the 5 vertical elastic probe 1 can be used to detect the force applied to the probe 50. The The vertical elastic probe 100 for pressure sensing includes a base plate 20, a probe base provided on the base plate 20, a needle measuring portion 50 provided on the probe base 30, and a surround The protective layer 60 of the probe base 30. The substrate 20 includes a groove 122 and a groove 1 disposed in the probe base 30 and the groove 1 22 external force sensing layers 130. The external force sensing layer 130 includes four rectangular piezoresistors 128A, 128B, 128C, and 128D, wherein the rectangular piezoresistance is formed by implanting polyvalent silicon with trivalent boron ions, and The two-metal wiring is electrically connected to the outside. For example, the rectangular piezoresistive 128C is electrically connected to the solder ball 26 on the lower surface of the substrate 20 by the two-metal wiring 132A, 132B and the metal conductive channels 22A, 22B provided inside the substrate 20. 8. 26B 〇 'When the external force is fine * added to the pin measuring part 50, the external force will be transmitted through the probe base 30 to the external force sensing layer inside the substrate 20, resulting in the external force sensing The two piezoresistors 128C and 128D in the layer 130 are elongated and narrowed to cause an increase in resistance, and the other two piezoresistors 128A and 128B are shortened and widened to reduce the resistance. When a voltage signal passes through the rectangular piezoresistance 128c through the metal bump 26A, the conductive metal channel 22A, and the metal wiring 132A, it is output by another metal wiring 132B, the conductive metal channel 22B, and the metal bump 26B. The four rectangular piezoresistances i28A, 128b, 128c, and 128 are connected in series and in parallel to form a bridge circuit, and the output voltage of the conventional bridge circuit output terminal is taken out to calculate the external force applied to the probe 50. Big
H:\HU\HYGVMc君明\89878\89878.DOC 1231371 圖5、圖6及圖7例示本發明之垂直式針測單元70、80 及90 ’其中僅例示單一針測單元。如圖5所示，該垂直式 針測單元70包含複數個環狀方式排列之垂直式彈性探針 10。該複數個垂直式彈性探針10之間距及排列方式係對應 於一待測積體電路之訊號接墊。藉由將各接地金屬方管62 引出，並運用各針測單元70間的間隙，以交錯方格式的連 線’並在交叉處以一接地金屬導電通道64連接至該基板20 背面，達成最短距離之接地要求。熟悉該項技藝者應瞭解 該複數個垂直式彈性探針1 〇亦可以矩陣方式排列（如圖6 所示）’或以中央直線方式排列（如圖7所示）。本發明 在該垂直式彈性探針1〇之周圍形成一保護層6〇,且在該保 護層60内部設置一環繞該垂直式彈性探針之接地金屬 方管62以降低電氣干擾。 圖8例示本發明之附壓力感測器之晶圓級垂直式針測卡 140。如圖8所示，該晶圓級垂直式針測卡14〇包含一基板 20、複數個設置於該基板2〇上之針測單元144以及一個設 置於該基板20外圍或中央之外力感測器146。該針測單元 144包含複數個如圖1所示之垂直式彈性探針1 〇，其間距 及排列方式係相應於一待測積體電路之訊號接墊。即，本 發明可藉由使用複數個針測單元144量測一多顆粒式積體 電路之電氣特性。 該外力感測器146包含複數個如圖3所示之壓力感測用 垂直式彈性探針1〇〇,該壓力感測用垂直式彈性探針1〇〇 H:\HU\HYGV^君明\89878\89878.DOC -10- 1231371 之探針基座30正下方的外力感測層13〇係由四條同向的矩 形壓阻所形成—橋式電路。本發明藉由該外力感測器146 可隨時檢測該待測晶圓上之施力是否均勻，並根據該外力 感測器146之量測數據，調整施加於該晶圓級垂直式針測 卡140及該待測晶圓之外力。 若該待測晶圓之積體電路的焊墊係以鋁金屬構成，則接 觸力可加大一些以便該環狀尖錐54可以刺破焊墊上的氧化 物’消除氧化物之電阻而不影響焊墊中心區的機械及電氣 性質，關後續打線或長凸塊等封裝製程。如果該待測晶 圓上的焊墊不需刺穿即可保持良好的電性接觸（例如液晶 顯示器的透明電極，ιτο)，則接觸力可以調整變小。又= 待測物焊墊已長圓形凸塊之情況，本針測卡之探針頭之環 形大錐54，皆可維持良好的機械與電氣接觸，因此本發明 之晶圓級垂直式針測卡140可以適用於多樣化的產品。 。此外，從該垂直式彈性探針1〇之環狀尖錐54至輸出訊 唬之金屬凸塊26係呈直線排列，亦即該垂直式彈性探針⑺ 具有最短之訊號傳送路徑，戶斤需之晶圓面積最小，因而可 形成最高密度之探針分佈。另，由於本發明之垂直式彈性 探針1〇不會滑動，因此不會發生偏位現象，且不會破壞待 測物之訊號接塾而產生殘渣。再者’本發明藉由該接地金 屬方管62環繞各垂直式彈性探針1〇以降低電氣干擾，因 此本發明之垂直式彈性探針1〇可應用於量測高頻電路元件 之電氣特性。 本發明之技術内容及技術特點巳揭示如上，然而熟悉本H: \ HU \ HYGVMc Junming \ 89878 \ 89878.DOC 1231371 Fig. 5, Fig. 6 and Fig. 7 illustrate the vertical probe units 70, 80 and 90 of the present invention, among which only a single probe unit is exemplified. As shown in FIG. 5, the vertical probe unit 70 includes a plurality of vertical elastic probes 10 arranged in a ring shape. The distance and arrangement of the plurality of vertical elastic probes 10 correspond to signal pads of a circuit under test. By drawing each grounded metal square tube 62 and using the gaps between the needle measuring units 70, the wires are connected in a staggered square format and connected to the back of the substrate 20 with a grounded metal conductive channel 64 at the intersection to achieve the shortest distance Grounding requirements. Those skilled in the art should understand that the plurality of vertical elastic probes 10 can also be arranged in a matrix manner (as shown in Fig. 6) 'or arranged in a central straight line (as shown in Fig. 7). The present invention forms a protective layer 60 around the vertical elastic probe 10, and a grounded metal square tube 62 surrounding the vertical elastic probe is disposed inside the protective layer 60 to reduce electrical interference. FIG. 8 illustrates a wafer-level vertical probe card 140 with a pressure sensor according to the present invention. As shown in FIG. 8, the wafer-level vertical probe card 14 includes a substrate 20, a plurality of probe units 144 disposed on the substrate 20, and a force sensor disposed outside or outside the substrate 20.器 146. The stylus measuring unit 144 includes a plurality of vertical elastic probes 10 as shown in Fig. 1. The pitch and arrangement of the stylus measuring unit 144 correspond to signal pads of a circuit under test. That is, the present invention can measure the electrical characteristics of a multi-particle integrated circuit by using a plurality of pin measuring units 144. The external force sensor 146 includes a plurality of vertical elastic probes 100 for pressure sensing as shown in FIG. 3, and the vertical elastic probes for pressure sensing 100H: \ HU \ HYGV ^ Junming \ 89878 \ 89878.DOC -10- 1231371 The external force sensing layer 13 directly below the probe base 30 is formed by four rectangular piezoresistors in the same direction-a bridge circuit. According to the present invention, the external force sensor 146 can detect whether the force on the wafer to be tested is uniform at any time, and adjust the wafer-level vertical pin probe card according to the measurement data of the external force sensor 146. 140 and the external force of the wafer under test. If the pad of the integrated circuit of the wafer under test is made of aluminum metal, the contact force can be increased so that the ring-shaped cone 54 can pierce the oxide on the pad, eliminating the resistance of the oxide without affecting the resistance The mechanical and electrical properties of the central area of the pad are related to subsequent packaging processes such as wire bonding or long bumps. If the pads on the wafer to be measured can maintain good electrical contact without piercing (such as the transparent electrode of a liquid crystal display, ιτο), the contact force can be adjusted to become smaller. Again = In the case where the pad of the object to be tested has an oblong bump, the large circular cone 54 of the probe head of this probe card can maintain good mechanical and electrical contact, so the wafer-level vertical needle of the present invention The test card 140 can be applied to a variety of products. . In addition, the circular elastic cone 10 of the vertical elastic probe 10 and the metal bump 26 of the output signal are arranged in a straight line, that is, the vertical elastic probe ⑺ has the shortest signal transmission path, and the household needs The smallest wafer area allows the highest density probe distribution. In addition, since the vertical elastic probe 10 of the present invention does not slide, the phenomenon of offset does not occur, and the signal connection of the object to be measured is not damaged, and residue is generated. Furthermore, the present invention uses the grounded metal square tube 62 to surround the vertical elastic probes 10 to reduce electrical interference. Therefore, the vertical elastic probes 10 of the present invention can be used to measure the electrical characteristics of high-frequency circuit components. . The technical content and technical features of the present invention are disclosed as above, but familiar with the present invention
君明\89878\89878.DOC -11 - 1231371 項技術之人士仍可能基於本發明之教示及揭示而作種種不 背離本發明精神之替換及修飾。因此，本發明之保護範圍 應不限於實施例所揭示者，而應包括各種不背離本發明之 替換及修飾，並為以下之申請專利範圍所涵蓋。 五、圖式簡要說明 圖1及圖2例示本發明之垂直式彈性探針； 圖3例示本發明之壓力感測用垂直式彈性探針； 圖4係本發明之外力感測層之示意圖； 圖5、圖6及圖7例示本發明之垂直式針測單元；以及 圖8例示本發明之附壓力感測器之晶圓級垂直式針測 卡。 ' 元件符號說明】 10 垂直式彈性探針 20 基板 22 金屬導電通道 22A 金屬導電通道 22B 金屬導電通道 24 絕緣層 26 金屬凸塊 26A 金屬凸塊 26B 金屬凸塊 30 探針基座 32 第一金屬層 34 第二金屬層 36 第三金屬層 38 金屬柱 40 第一彈性層 42 第二彈性層 44 連接部 50 針測部 52 本體 54 環狀尖錐 60 保護層 62 接地金屬方管 64 接地金屬導電通道 70 垂直式針測單元 H:\HU\HYGV|=；fc君明\89878\89878.DOC •12- 1231371 80 垂直式針測單元 90 垂直式針測單元 122 凹槽 100 壓力感測用垂直式 彈性探針 128A矩形壓阻 128B矩形壓阻 128C矩形壓阻 128D矩形壓阻 130 外力感測層 132A金屬接線 132B金屬接線 140 晶圓級針測卡 144 針測單元 146 外力感測器 H:\HU\HYG\林君明\89878\89878.DOC -13-Persons with Junming \ 89878 \ 89878.DOC -11-1231371 technologies may still make various substitutions and modifications based on the teaching and disclosure of the present invention without departing from the spirit of the present invention. Therefore, the protection scope of the present invention should not be limited to those disclosed in the embodiments, but should include various substitutions and modifications that do not depart from the present invention, and are covered by the following patent application scope. V. Brief Description of the Drawings Figures 1 and 2 illustrate the vertical elastic probe of the present invention; Figure 3 illustrates the vertical elastic probe for pressure sensing of the present invention; Figure 4 is a schematic diagram of the force sensing layer outside the present invention; FIGS. 5, 6 and 7 illustrate a vertical probe unit of the present invention; and FIG. 8 illustrates a wafer-level vertical probe card with a pressure sensor according to the present invention. '' Explanation of component symbols 10 Vertical elastic probe 20 Substrate 22 Metal conductive channel 22A Metal conductive channel 22B Metal conductive channel 24 Insulating layer 26 Metal bump 26A Metal bump 26B Metal bump 30 Probe base 32 First metal layer 34 Second metal layer 36 Third metal layer 38 Metal pillar 40 First elastic layer 42 Second elastic layer 44 Connection portion 50 Needle measurement portion 52 Body 54 Ring-shaped cone 60 Protective layer 62 Ground metal square tube 64 Ground metal conductive channel 70 Vertical probe unit H: \ HU \ HYGV | =; fc Junming \ 89878 \ 89878.DOC • 12- 1231371 80 Vertical probe unit 90 Vertical probe unit 122 Groove 100 Vertical type for pressure sensing Elastic probe 128A rectangular piezoresistive 128B rectangular piezoresistive 128C rectangular piezoresistive 128D rectangular piezoresistive 130 external force sensing layer 132A metal wiring 132B metal wiring 140 wafer level probe card 144 probe unit 146 external force sensor H: \ HU \ HYG \ 林君明 \ 89878 \ 89878.DOC -13-