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五、發明說明（1) 本發明係有關於一種發光二極體構造，尤指一種以藍 寶石為基板而可提高發光亮度功效之發光二極體。V. Description of the invention (1) The present invention relates to a light-emitting diode structure, and particularly to a light-emitting diode with sapphire as a substrate to improve the luminous efficacy.
發光二極體（LED ; Light-Emitting Diode)由於具備 有哥命長、體積小、發熱量低、耗電量小、反應速度快、 及單性光發光之特性及優點，因此被視為是新世代之光源 最佳選擇。為了產生不同的光源波長及色光，發光二極體 於製作上必須搭配不同材質所製成之基板，如砷化鎵（GaA s)、磷化鎵（GaP)、藍寶石（Sapphi re)或碳化矽（SiC)等。Light-Emitting Diode (LED; Light-Emitting Diode) is considered to be because it has the characteristics and advantages of long life, small size, low heat generation, low power consumption, fast response, and unisex light emission. The best choice for new generation light sources. In order to produce different light source wavelengths and colored light, the light emitting diode must be manufactured with a substrate made of different materials, such as gallium arsenide (GaA s), gallium phosphide (GaP), sapphire (Sapphi re) or silicon carbide (SiC), etc.
而一些基板由於質地堅硬，例如藍寶石基板，請參閱 第1圖，係為一習用以藍寶石為基板之發光二極體構造截 面圖’其主要係於藍寶石基板11之頂層上首先形成一緩衝 薄膜層12，例如氮化鎵（GaN )薄膜層，之後再於氮化鎵薄 膜層12上形成一具有p — n界面而可發射光源之發光二極體 (LED )磊晶層13，由於藍寶石基板丨丨係為一透光絕緣體， 所以只能選擇在LED磊晶層丨3之頂層上再個別鍍上同平面 之第一電極15及第二電極17，而成為一平面式發光二極體 由於為了在藍寶石基板11 蠢晶層1 3時之方便性，所以一 形成該緩衝薄膜層丨2，而緩衝 常會因為其物理特性而對藍寶 應力’若使用之藍寶石基板11 30 0um)，在實務上並無法抗拒 石基板11上形成一道道之破裂 上成長一發光一極體（L E D) 般會在藍寶石基板11之頂層 薄膜層1 2在退火冷卻時，常 石基板11施予一不小之作用 厚度未超過一定量時（約為 此應力作用，因此常在藍寶 隙縫，而造成LED構造之生Some substrates have a hard texture, such as a sapphire substrate. Please refer to FIG. 1, which is a cross-sectional view of a light-emitting diode structure used as a sapphire substrate. It is mainly formed on the top layer of the sapphire substrate 11. 12, such as a gallium nitride (GaN) thin film layer, and then a light emitting diode (LED) epitaxial layer 13 having a p-n interface and capable of emitting light is formed on the gallium nitride thin film layer 12.丨 is a light-transmitting insulator, so you can only choose to plate the first and second electrodes 15 and 17 on the same plane on the top layer of the LED epitaxial layer 丨 3, and become a planar light-emitting diode. Convenience in the sapphire substrate 11 when the stupid crystal layer 13 is formed, so once the buffer film layer is formed, and the buffer often stresses sapphire because of its physical characteristics (if the sapphire substrate is used (11 30 0um)), in practice It cannot resist the formation of cracks on the stone substrate 11 and grow a light emitting diode (LED). The thin film layer 12 on the top layer of the sapphire substrate 11 is generally given a large amount during annealing and cooling. When the effect of the thickness does not exceed a certain amount (approximately this stress, and therefore often Sapphire slot, causing the green LED configuration
第4頁 558844Page 4 558844
產不良率提升。 板11在後續切割製作晶粒過 ，想要垂直細微切割有其高 製程前，必須先利用裂切或 (如虛線框，符號1 4所示） 將造成資源之浪費及成本之 惟’如此厚度之藍寶石基 权中將形成非常大的技術困難 深艱難技術，所以一般在切割 研磨等方式去除藍寶石基板^ 至lOOum厚度以下，如此不僅 提升’更徒增製程上的麻煩。 為此’本案申請人曾針對上述之缺點提出一系列之改 善技術，如臺灣專利公告第415117號「發光二極體之基板 構造改良」及公告第424338號「以藍寶石為基板之藍光發 光一極體及其製作方法」，而依上述專利揭露技術所製作 之產品體確實也能達到發光亮度有效提升之目的及功效。 惟’ LED雖然可從基板背面投射光源，但以背面發光 為目的之發光二極體不僅製作技術上較為困難，且製作成 本太高’再加上產品應用上還是存在有很多必須利用正面 發光之使用態樣’因此，如何將背面光源引導至正面以兹 利用’即成為大家所追求之技術突破。 參閱第2圖，係為另一種習用LED之構造截面圖，其 主要係在藍寶石基板11之底層位置設有一光反射層19，利 用光反射層19之光反射作用，而可將入射光a 2、b2、c2、 d2反射至LED之正面或側面方向，藉此以增加LED之正面發 光亮度^ 雖然’上述習用構造可提高正面發光亮度效果，但由 於LED蠢晶層1 3之pn接面至光反射層1 9間之距離太短，換Yield rate increased. After the plate 11 is manufactured after subsequent cutting, before vertical fine cutting is required to have its high process, it must first use split cutting or (as shown by the dashed box, symbol 14), which will cause waste of resources and cost. The sapphire base will form a very large technical difficulty and difficult technology, so the sapphire substrate is generally removed by cutting and grinding, etc. to a thickness of less than 100um, which not only increases the trouble of the process. To this end, the applicant of this case has proposed a series of improvement techniques for the above-mentioned shortcomings, such as Taiwan Patent Publication No. 415117 "Improvement of the Structure of the Light-Emitting Diode's Substrate" and Publication No. 424338 "Sapphire-Based Blue Light-Emitting One-Pole Body and its manufacturing method ", and the product body made according to the above patent disclosure technology can indeed achieve the purpose and effect of effectively improving luminous brightness. However, although the LED can project a light source from the back of the substrate, the production of light-emitting diodes for the purpose of back-emitting light is not only difficult to manufacture technically, but the production cost is too high. In addition, there are still many applications that must use front-side light-emitting diodes. The use pattern 'so, how to guide the back light source to the front for the purpose of use' has become a technological breakthrough that everyone is pursuing. Refer to FIG. 2, which is a structural cross-sectional view of another conventional LED, which is mainly provided with a light reflection layer 19 on the bottom position of the sapphire substrate 11. The light reflection effect of the light reflection layer 19 can be used to convert incident light a 2 , B2, c2, d2 are reflected to the front or side direction of the LED, thereby increasing the front luminous brightness of the LED ^ Although the conventional structure described above can improve the effect of front luminous brightness, but because the pn junction of the LED dummy layer 13 is to The distance between the light reflecting layers 19 is too short.
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射光a2〜(12之光程距離不夠長，因此入射 短距離内即將到馇止c ω成彳n , ^ 八町尤在很 反射4 古達層 即使光反射層19係選用光 射率^之材質所製成，但畢竟人射光並非直接射出 於LED構造外，而是經過兩個不同之介 光態樣射出’如。2，此其將造成發光亮度之莫幻m 外，由於入射光光程距離較短，因此亦有較多之入射光數 量反射時將被第一電極15或第二電極17所遮蔽或形成構造 内内反射而形成發光亮度之損失，如a2及b2。 因此，如何針對上述問題而提出一種新穎之發光二極The light path distance of the light a2 ~ (12 is not long enough, so in the short distance of incidence, 馇 c ω becomes 彳 n, ^ Yachado is very reflective. 4 The Guda layer, even if the light reflection layer 19 is the light transmittance ^ Made of materials, but after all, the human light is not directly emitted from the LED structure, but is emitted through two different media states, such as .2, which will cause the magic brightness of the luminous brightness outside, due to the incident light The distance is short, so when there is a large amount of incident light reflected, it will be shielded by the first electrode 15 or the second electrode 17 or the internal reflection of the structure will be formed to form the loss of luminous brightness, such as a2 and b2. Therefore, how to In view of the above problems, a novel light emitting diode is proposed.
體構造，以有效解決各種發光亮度損失的缺憾，即為本發 明之發明重點。爰是 本發明之主要目的在於提供一種發光二極體構造，利 用簡單之構造變化即可有效提升發光二極體之正面發光亮 度。 〜 本發明之次要目的在於提供一種發光二極體構造，可 在製造成本增加有限之情況下以大幅提高LED構造之正面 發光亮度。The structure of the body to effectively solve the various shortcomings of the loss of luminous brightness is the focus of the invention. Rhenium is the main object of the present invention to provide a light emitting diode structure, which can effectively improve the front light emitting brightness of the light emitting diode with simple structural changes. ~ A secondary object of the present invention is to provide a light-emitting diode structure that can greatly increase the brightness of the front side of the LED structure with a limited increase in manufacturing costs.
本發明之又一目的在於提供一種發光二極體構造，尤 其適用於具有堅硬基板材質之led，其多樣之實施態樣可 因應各種使用場合，不僅方便製造，亦可增加設計時之靈 活多變性。 本發明之又一目的在於提供一種發光二極體構造，藉 由透光基板之設立而可提高後續封裝及測試製程時之方便 性者。Another object of the present invention is to provide a light-emitting diode structure, which is particularly suitable for LEDs with a hard substrate material. The various implementation modes can be used in various applications, not only to facilitate manufacturing, but also to increase flexibility in design. . Another object of the present invention is to provide a light-emitting diode structure, which can improve the convenience of subsequent packaging and testing processes through the establishment of a light-transmitting substrate.
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五、發明說明（4) 兹為使貴審查委員對本發明之結構特徵及所達 功效有更進一步之瞭解與認識’謹佐以較佳之實施例圖及 配合詳細之說明，說明如後： 首先，請參閱第3圖’係為本發明發光二極體之一較 佳實施例構造截面圖；如圖所示，在此平面式發光二極^ 實施例中，其構造主要係包括有一業已被裂切或研磨過之 成長基板3 1，例如係由藍寶石或碳化矽等材質所製成之某 板，藍寶石基板31之頂層依序設有一如氮化鎵層之緩衝薄 膜層32及一具有ρη接面之LED蠢晶層33，並於LED蟲晶芦33 之頂層部分位置個別設有一第一電極35及第二電極^ :之 後，再藉由一黏固層38以固定一具有可增加入射光a3、b3 、c3、d3光程路徑效果之透光基板36於藍寶石基板3i之底 層位置’並再於透光基板36之底層設有一具有反射光源效 果之光反射層39。 由於本發明之透光基板36係形成於藍寶石基板31之底 層位置’藉由透光基板36之厚度將可大幅增加LED磊晶層 3 3之pn接面發光區至光反射層39間之距離，換言之，即是 可用以延長入射光a 3〜d3之光程路徑。本發明藉此簡單之 構造變化’不僅可有效增加入射光直接射出於led構造外 之數量’如c3，且亦可相對降低入射光反射後被第一電極 35或第二電極3 7遮蔽或因構造内内反射所形成之光源亮度 損失’如b3，因此，其正面光源之亮度將可獲得有效且明 顯之提升。 當然’本發明之黏固層38係由一具由透光效果之材質V. Description of the invention (4) In order for your review members to have a better understanding and understanding of the structural features and effects of the present invention, 'I would like to accompany the diagram of the preferred embodiment and the detailed description, as described below: First, Please refer to FIG. 3 ', which is a structural cross-sectional view of a light emitting diode according to a preferred embodiment of the present invention. As shown in the figure, in this planar light emitting diode ^ embodiment, its structure mainly includes a cracked The cut or polished growth substrate 31 is, for example, a plate made of sapphire or silicon carbide. The top layer of the sapphire substrate 31 is sequentially provided with a buffer film layer 32 such as a gallium nitride layer and a pn connection. Surface of the LED stupid crystal layer 33, and a first electrode 35 and a second electrode are respectively provided at the top part of the LED insect crystal reed 33: After that, a cementing layer 38 is used to fix a component having an increased incident light. A3, b3, c3, and d3 optical path path effects of the light-transmitting substrate 36 are provided at the bottom position of the sapphire substrate 3i, and a light-reflecting layer 39 having a reflective light source effect is provided at the bottom of the light-transmitting substrate 36. Since the light-transmitting substrate 36 of the present invention is formed at the bottom position of the sapphire substrate 31, the distance between the light-emitting area of the pn junction of the LED epitaxial layer 33 and the light-reflecting layer 39 can be greatly increased by the thickness of the light-transmitting substrate 36. In other words, it can be used to extend the optical path of the incident light a 3 ~ d3. According to the invention, the simple structural change 'not only can effectively increase the amount of incident light directly emitted from the LED structure', such as c3, but also can relatively reduce the incident light reflection after being blocked by the first electrode 35 or the second electrode 37. The brightness loss of the light source formed by the internal and internal reflection of the structure is 'b3'. Therefore, the brightness of the front light source can be effectively and significantly improved. Of course ’the adhesive layer 38 of the present invention is made of a material having a light transmitting effect.
558844 五、發明說明（5) 所製成，例如鋁、金、鉑、鋅、銀、銦或錫等材質。而透 光基板36亦同樣係由具有透光效果之材質所製成，例如玻 璃、石英、藍寶石、環氧基樹脂、GaP、GaAsP、ZnSe、zn S或ZnSSe等材質。又，若為了因應各種使用場合，亦可在 透光基板3 6内填加一可改變光源波長之螢光粉等物質（未 顯示）’如此即可獲得不同顏色之光源效果，甚至可搭配 成白色光源。 另外’由於位於第一電極35垂直延伸位置所發射之部 为入射光係垂直射向反射層39，如a3，其反射後之光源亦 會垂直反射至第一電極35底緣，因此將形成發光亮度之些 許損失。 為此，請參閱第4圖，在本發明之此一實施例中，主 要係將透光基板4 6之部分底層馨設有一内凹槽4 6 5設計， 例如形成於第一電極3 5垂直延伸方向之底層位置，而該内 凹槽465内將可填塞光反射層49，如此入射光a3將可因為 反射界面之非水平態樣而反射至非第一電極35之垂直延伸 位置’順利避開第一電極35之位置而投射出LED構造外。 當然，此一破壞反射界面水平態樣以提高發光亮度之 構造’並不限於透光基板之内凹槽設計，其亦可在透光基 板5 6之底層位置設計有一波浪部或鋸齒部態樣5 6 5，之後 再設有一光反射層5 9，同樣可達到上述實施例之效果，如 第5圖所示。 再者，請參閱第6圖，係為本發明又一實施例之構造 截面圖；如圖所示，其主要係將透光基板66設計成一具有558844 V. Description of invention (5) Made of materials such as aluminum, gold, platinum, zinc, silver, indium or tin. The light-transmitting substrate 36 is also made of a material having a light-transmitting effect, such as glass, quartz, sapphire, epoxy resin, GaP, GaAsP, ZnSe, zn S, or ZnSSe. In addition, in order to respond to various use occasions, a light-emitting material such as a fluorescent powder (not shown) that can change the wavelength of the light source can be added to the light-transmitting substrate 36 to obtain light source effects of different colors, and even match White light source. In addition, 'because the part emitted at the vertical extension position of the first electrode 35 is an incident light system that strikes the reflective layer 39 vertically, such as a3, the reflected light source will also be reflected vertically to the bottom edge of the first electrode 35, so light will form. A little loss of brightness. For this purpose, please refer to FIG. 4. In this embodiment of the present invention, a part of the bottom layer of the light-transmitting substrate 46 is provided with an inner groove 4 6 5. For example, the first electrode 35 is formed vertically. The bottom position of the extending direction, and the light reflecting layer 49 can be filled in the inner groove 465, so that the incident light a3 can be reflected to the vertical extending position of the non-first electrode 35 because of the non-horizontal state of the reflection interface, and can be avoided The position of the first electrode 35 is opened to project out of the LED structure. Of course, this structure that destroys the horizontal aspect of the reflective interface to improve the luminous brightness is not limited to the inner groove design of the light-transmitting substrate. It can also be designed with a wave or sawtooth shape at the bottom of the light-transmitting substrate 56. 5 6 5 and then a light reflecting layer 5 9 is provided, which can also achieve the effect of the above embodiment, as shown in FIG. 5. Moreover, please refer to FIG. 6, which is a structural cross-sectional view of another embodiment of the present invention; as shown in the figure, it is mainly designed that the light-transmitting substrate 66 has a
558844 五、發明說明（6) 幾何態樣者’例如具有聚光效果之半圓球體設計，而半圓 球體透光基板66之外圍再設有一光反射層69，如此入射光 將受到半圓球體態樣之光反射層69影響而聚集射向一正面 所在位置’因此可達到聚光並提高光源亮度之效果。 最後’明參閱第7圖’係為本發明發光二極體之又一 實施例構造截面圖；如圖所示，依照本發明之發明精神及 設計概念同樣可適用於直立式之發光二極體，其構造主要 係將可由藍寶石或碳化矽等材質所製成之成長基板71鑿設 至少一通道715，在此通道715内可存在有一如氮化鎵之緩 衝薄膜層72 ’而緩衝薄膜層72之頂層再依序設有一 LED蠢 晶層73及第一電極7 5 ;該通道715内亦可存在有一導電層 或具導電效果之黏固層74，而導電層74之底層再依序設有 一透光基板76、光反射層79及第二電極77。由於通道715 内之緩衝薄膜層72或導電層74具有導電功效，可提供第一 電極75及第二電極77間之通電管道，而在此實施例中具有 導電功能之透光基板7 6同樣可達到大幅提高發光亮度之功 效0 當然’光反射層79亦可設計為位於第二電極γγ之底層 位置態樣者，在此種設計下，其第二電極γ 了亦可選用具有 透光效果之材質所製成’如氧化鋅、氧化銦、氧化錫或氧 化銦錫等材質。 另外，前面實施例中所揭露之透光基板内凹槽、波浪 部、鑛齒部或半圓球體設計亦同樣適用於在此直立式發光 二極體之構造中，同樣可達到提高發光亮度之功效及目的558844 V. Description of the invention (6) The geometric shape is' for example, a semi-spherical sphere design with a light-concentrating effect, and a light reflecting layer 69 is provided on the periphery of the semi-spherical transparent substrate 66, so that the incident light will be affected by the semi-spherical shape The light reflection layer 69 affects the light and focuses it to a position of a front surface, thereby achieving the effect of condensing and improving the brightness of the light source. Finally, 'refer to FIG. 7' is a structural cross-sectional view of another embodiment of the light-emitting diode of the present invention; as shown in the figure, the spirit and design concept of the present invention can also be applied to a vertical-type light-emitting diode. The structure is mainly formed by cutting at least one channel 715 of a growth substrate 71 made of sapphire or silicon carbide and other materials, and a buffer film layer 72 ′ such as gallium nitride may exist in this channel 715 and the buffer film layer 72 An LED stupid crystal layer 73 and a first electrode 75 are sequentially provided on the top layer; a conductive layer or a conductive layer 74 having a conductive effect may also be present in the channel 715, and a bottom layer of the conductive layer 74 is sequentially provided with one The light-transmitting substrate 76, the light reflection layer 79, and the second electrode 77. Since the buffer film layer 72 or the conductive layer 74 in the channel 715 has a conductive effect, a current-conducting pipe between the first electrode 75 and the second electrode 77 can be provided, and the light-transmitting substrate 76 having a conductive function in this embodiment can also be used. Achieving the effect of greatly improving the luminous brightness 0 Of course, the light reflecting layer 79 can also be designed to be located at the bottom position of the second electrode γγ. Under this design, the second electrode γ can also be selected to have a light transmitting effect. Made of materials such as zinc oxide, indium oxide, tin oxide, or indium tin oxide. In addition, the design of the grooves, wavy portions, ore teeth, or semicircular spheres in the transparent substrate disclosed in the previous embodiment is also applicable to the structure of this vertical light-emitting diode, which can also improve the brightness of light. And purpose
558844 五、發明說明（7) 又， 雖 然前述 實 施 例 皆 以提 所 以 皆列 舉 有光反 射 層 之 設 計， 要 5 避免 因 為藍寶 石 基 板 太 薄而 時 之 技術 困 難度， 所 以 亦 可 能僅 藉 由 透光 基 板之厚 度 以 方 便 後續 綜上 所 述，本發 明 係 有 關於 指 一 種以 藍 寶石為 基板 而 可 提南 體 〇 故本發 明實為 一 具 有 新 穎性 者 應符 合 我國專 利 法 所 規 定之 法 〇 提 出發 明 專利申 請 9 祈 鈞局 惟以 上 所述者 9 僅 為 本發明 非 用 來限 定 本發明 實 施 之 範 圍， 圍 所 述之 形 狀、構 造 特 徵 及精 > 均 應包 括 於本發 明 之 中 請 專利 圖 號 簡單 說 明： 11 藍 寶 石基板 12 13 L E D蠢晶層 14 15 第 一 電極 17 19 光 反 射層 31 32 緩 衝 薄膜層 33 35 第 一 電極 36 南發光免度 惟，若為因 徒增後續封 設計有透光 製程之進行 一種發光二 發光亮度功 、進步性及 專利申請要 早曰賜准專 緩衝薄膜層 基板去除部分 第二電極 藍寶石基板 led磊晶層 透光基板558844 V. Description of the invention (7) Also, although the foregoing embodiments are all designed with a light reflecting layer, it is necessary to avoid the technical difficulty when the sapphire substrate is too thin, so it is also possible to use only light transmission. The thickness of the substrate is convenient for the following summary. The present invention refers to a method that uses sapphire as the substrate and can be used to raise the south body. Therefore, the invention is a novelty and should comply with the law stipulated by the Chinese Patent Law. Patent application 9 Qijun Bureau, but the above-mentioned 9 is only for the purpose of the present invention, not to limit the scope of implementation of the present invention, the shapes, structural features, and precisions described above should be included in the present invention. Brief description: 11 Sapphire substrate 12 13 LED stupid layer 14 15 First electrode 17 19 Light reflection layer 31 32 Buffer film layer 33 35 First electrode 36 South light emission is exempt, but if it is designed for subsequent encapsulation Optical process of a light emission luminance two reactive, progressive said earlier patent application and registration give special buffer thin film layer portion of the second electrode substrate, the sapphire substrate is removed led epitaxial layer transparent substrate
功效為前提， 應製程上之需 裝或測試製程 基板之存在， 〇 極體構造，尤 效之發光二極 可供產業利用 件無疑，爰依 利，至感為禱 麵 第10頁 558844The premise of efficacy is to install or test the process according to the needs of the process. The existence of the substrate, the structure of the pole body, especially the light-emitting diode, can be used by the industry. There is no doubt that it is a good thing to pray for the benefit. Page 10 558844
第11頁 五、發明說明（8) 37 第 二 電 極 38 黏 固 層 39 光 反 射 層 46 透 光 基 板 465 内 凹 槽 49 光 反 射 層 56 透 光 基 板 565 波 浪 部 59 光 反 射 層 66 透 光 基 板 69 光 反 射 層 71 藍 寶 石 基 板 715 通 道 72 緩 衝 薄 膜 層 73 L E D蠢晶層 74 導 電 層 75 第 一 電 極 76 透 光 基 板 77 第 電 極 79 光 反 射 層 558844 圖式簡單說明 第1圖：係習用發光二極體之構造截面圖； 第2圖：係習用另一種發光二極體之構造截面圖； 第3圖：係本發明發光二極體一較佳實施例之構造截面圖 第4圖：係本發明又一實施例之構造截面圖； 第5圖：係本發明又一實施例之構造截面圖； 第6圖：係本發明又一實施例之構造截面圖；及 第7圖：係本發明又一實施例之構造截面圖。Page 11 V. Description of the invention (8) 37 Second electrode 38 Adhesive layer 39 Light reflecting layer 46 Light transmitting substrate 465 Inner groove 49 Light reflecting layer 56 Light transmitting substrate 565 Wave portion 59 Light reflecting layer 66 Light transmitting substrate 69 Light reflecting layer 71 Sapphire substrate 715 Channel 72 Buffer film layer 73 LED stupid layer 74 Conductive layer 75 First electrode 76 Light-transmitting substrate 77 First electrode 79 Light reflecting layer 558844 Brief description of the diagram Figure 1: Department of conventional light-emitting diodes Sectional view of the structure; Figure 2: A sectional view of the structure of another conventional light-emitting diode; Figure 3: A sectional view of the structure of a preferred embodiment of the light-emitting diode of the present invention. Sectional view of a structure of an embodiment; FIG. 5: a sectional view of a structure of another embodiment of the present invention; FIG. 6: a sectional view of a structure of another embodiment of the present invention; Structure cross-sectional view of the embodiment.
第12頁Page 12
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91110071ATW558844B (en) | 2002-05-15 | 2002-05-15 | Light emitting diode capable of increasing light emitting brightness |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91110071ATW558844B (en) | 2002-05-15 | 2002-05-15 | Light emitting diode capable of increasing light emitting brightness |
| Publication Number | Publication Date |
|---|---|
| TW558844Btrue TW558844B (en) | 2003-10-21 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91110071ATW558844B (en) | 2002-05-15 | 2002-05-15 | Light emitting diode capable of increasing light emitting brightness |
| Country | Link |
|---|---|
| TW (1) | TW558844B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8362506B2 (en) | 2007-09-28 | 2013-01-29 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body |
| TWI387122B (en)* | 2004-09-24 | 2013-02-21 | Stanley Electric Co Ltd | Light-emitting diode device |
| TWI401786B (en)* | 2009-11-11 | 2013-07-11 | Optromax Electronics Co Ltd | Package structure |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI387122B (en)* | 2004-09-24 | 2013-02-21 | Stanley Electric Co Ltd | Light-emitting diode device |
| US8362506B2 (en) | 2007-09-28 | 2013-01-29 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body |
| TWI401786B (en)* | 2009-11-11 | 2013-07-11 | Optromax Electronics Co Ltd | Package structure |
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| GD4A | Issue of patent certificate for granted invention patent | ||
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