TW544882B - Chip package structure and process thereof - Google Patents

Abstract

A chip package structure and process thereof are disclosed, with a chip is pasted on an organic substrate, which a build-up circuit layer is formed on the chip and organic substrate, and the build-up circuit layer has an external circuit which is electrically connected to the metal pad on the chip, and part of the external circuit is extended to the region outside the upper side of the active surface of the chip, so as to fan-out the metal pad of the chip. In addition, there is an internal circuit and plural active devices on the active surface of the chip, the signal can be transmitted from an active device to the external circuit through the internal circuit, then transmitted from the external circuit to the other active devices through the internal circuit. Furthermore, chips with the same or different functions can be integrated into the same package, and can be electrically connected mutually through the external circuit.

Description

Translated fromChinese

括圖案化該第二介 第一接A^彎而形成複數個第二貫孔’其分別對應該些 ^接σ蟄而貧穿診 渦誅!fch络〜_ 介電層’並且該第二圖案化導線層係穿 過該些第二貫孔 ⑶·如申 ，而電性 連接該第一圖案化導線層。 第13〇項所述之晶片封裝製程，其中在配 圖案化導總& 圖案仆道始@ 喊場於該第二介電層之上時’並將部分該第二 圆条化導線層之導 數個第二 嗓付料塡入該些第二貫孔之內，而同時形成複 被隐@塞&該第二圖案化導線層’其中該第二圖案化導 線層可經由該些第〜繪 〜導電插塞，而電性連接該第一圖案化導線層。 13 2 ·如申請童泊丨& ra导·利|β圍第13〇項所述之晶片封裝製程，其中在配 置該第二圖案I 導線層於該第二介電層之上前，更包括塡入導電 ^料於該些第二貫孔之內，而形成複數個第二導電插塞，其中該 第一圖案化導線層可經由該些第二導電插塞，而電性連接該第一 圖案化導線層。 置;Including patterning the second intermediary first connection A ^ to form a plurality of second through holes 'which respectively correspond to ^ 蛰 蛰 and poorly penetrate the diagnostic vortex! Fch network ~ _ dielectric layer' and the second The patterned conductive wire layer passes through the second through holes (3). As a result, the first patterned conductive wire layer is electrically connected. The chip packaging process as described in item 130, wherein when the patterned conductor & pattern servant channel is called on the second dielectric layer 'and part of the second rounded conductor layer is Derivatives of the second voice are charged into the second through holes, and at the same time, a multiple cover is formed @ 塞 & The second patterned wire layer, wherein the second patterned wire layer can pass through the first ~ The conductive plug is drawn, and the first patterned conductive wire layer is electrically connected. 13 2 · According to the application of the chip package manufacturing process described in item 130 of the article, wherein the second pattern I wire layer is disposed on the second dielectric layer, The method includes inserting conductive material into the second through holes to form a plurality of second conductive plugs, wherein the first patterned conductive layer can be electrically connected to the first conductive plugs through the second conductive plugs. A patterned wire layer. Set;

—133·如申請專利範圍第Π9項所述之晶片封裝製程，其中該第 〜介電層之材質包括聚乙醯胺、苯基環丁烯、多孔性介電材料及 彈性緩衝材料其中之一。 134.如申請專利範圍第I”項所述之晶片封裝製桿，其中配置 該第二圖案化導線層於該第二介電層之上的方法包括濺鍍、有電 電鍍及無電電鍍其中之一。 135.如申請專利範圍第129項所述之晶片封裝製程，更包括配 置圖案化之一保護層於該第二介電層及該第二圖案化導線層之 上，並暴露出該些第二接合墊。 136.如申請專利範圍第129項所述之晶片封裝製程，更包括分 -21 · 544882 別配置一接點於該些第二接合墊上。 137.如申請專利範圍第136項所述之晶片封裝製程，其中該些 接點之型態包括靜球、凸塊及針腳其中之一 ° 138如申請專利範圍第136項所述之晶片封裝製程，在分別配 置該些接點於該些第二接合墊上之後，更包括分割該些晶片之封 裝結構。 139.如申請專利範圍第138項所述之晶片封裝製程，其中在分 割該些晶片之封裝結構時，係以單顆晶片爲單位進行分割。—133 · The chip packaging process as described in item No. Π9 of the scope of the patent application, wherein the material of the ~~ dielectric layer includes one of polyethyleneamine, phenylcyclobutene, porous dielectric material, and elastic buffer material . 134. The chip packaging rod according to item I of the patent application scope, wherein the method of disposing the second patterned wire layer on the second dielectric layer includes sputtering, electroplating, and electroless plating. 1. 135. The chip packaging process according to item 129 of the scope of patent application, further comprising arranging a patterned protective layer on the second dielectric layer and the second patterned conductive layer, and exposing these The second bonding pad. 136. The chip packaging process described in item 129 of the scope of patent application, further includes -21,544,882, and a contact is arranged on the second bonding pads. 137. The scope of patent application, item 136 In the chip packaging process, the types of the contacts include one of a static ball, a bump, and a pin. 138 According to the chip packaging process described in item 136 of the scope of patent application, the contacts are respectively arranged in the After the second bonding pads are attached, the package structure for dividing the wafers is further included. 139. The wafer packaging process according to item 138 of the patent application scope, wherein when the package structure of the wafers is divided, a single wafer is used. For the unit segmentation.

14〇·如申請專利範圍第138項所述之晶片封裝製程，其中在分 割該些晶片之封裝結構時，係以多顆晶片爲單位進行分割。 141.如申請專利範圍第129項所述之晶片封裝製桿，更包括重 爷复歩驟(a)及步驟(b)複數次。140. The wafer packaging process according to item 138 of the scope of patent application, wherein when the packaging structure of the wafers is divided, the wafers are divided in units of multiple wafers. 141. The chip packaging rod according to item 129 of the scope of patent application, further comprising repeating steps (a) and (b) multiple times.

142·如申請專利範圍第141項所述之晶片封裝製程，更包括配 —®案化之—保護層於該些第二介電層之最遠離該有機基板者及 _ 〜_案化導線層之最遠離該有機基板者之上，並暴露出該第 案化導線層之最遠離該有機基板者的該些第二接合墊。 接點於該些第二圖案化導線層之最遠離該有機基板者的 l43·如申請專利範圍第141項所述之晶片封裝製程，更包括分 別配鹰. 〜第=接合墊上 144·如申請專利範圍第143項所述之晶片封裝製桿，其中該些 ^類占'> …《迦態包括銲球、凸塊及針腳其中之一。 l4S.如申請專利範圍第M3項所述之晶片封裝製程，在分別配 接點於該些接合墊上之後，更包括分割該些晶片之封裝結 •22-142. The chip packaging process described in item 141 of the scope of application for patents, further includes a -® case-protection layer on the second dielectric layer that is farthest away from the organic substrate and _ ~ _ case-formed wire layer The second bonding pads that are farthest from the organic substrate and are exposed farthest from the organic substrate. The contact point of the second patterned wire layer farthest from the organic substrate is l43. The chip packaging process described in item 141 of the scope of application for patents, including a separate eagle. ~ # = Bonding pad 144 · if applied The chip package rod as described in the item 143 of the patent scope, wherein these types account for '> ... "Gas states include one of solder balls, bumps and pins. l4S. According to the chip packaging process described in item M3 of the scope of patent application, after the joints are respectively attached to the bonding pads, the packaging junction of the wafers is further divided. 22-

544882 146·如申請專利範圍第145項所述之晶片封裝製程，其中在分 割該些晶片之封裝結構時，係以單顆晶片爲單位進行分割》 147. 如申請專利範圍第145項所述之晶片封裝製程，其中在分 割該些晶片之封裝結構時，係以多顆晶片爲單位進行分割。 148. —種晶片封裝結構，至少包括： 一有機基板； 一晶片組，該晶片組具有一主動表面及對應之一背面，且該 晶片組更具有複數個金屬墊，其配置於該主動表面上，而該晶片 組係以該背面貼附於該有機基板上； 一塡充層’配置於該有機基板之上，並環繞於該晶片組之周 緣，且該塡充層之頂面係對齊於該晶片組之該主動表面；一有機 薄層，配置於該塡充層及該晶片組之上；以及 一積層線路層’配置於該有機薄層之上，其中該積層線路層 具有一外部線路’而該些外部線路係電性連接該晶片組之該些金 屬墊’且至少部分該外部線路係延伸至該晶片組之該主動表面上 方以外的區域’並且該外部線路具有複數個接合墊，其位於該積 層線路層之表層’而每一該些接合墊係分別電性連接至該晶片組 之部分該些金屬墊之一。 149. 如申請專利範圍第I48項所述之晶片封裝結構，其中該晶 片組係組成自單一個晶片。 15〇.如申請專利範圍第U8項所述之晶片封裝結構，其中該晶 片組係組成自複數個晶片。 23· 544882 151. 如申請專利範圍第15〇項所述之晶片封裝結構’其中部分 該些晶片係爲複數個功能不同的晶片。 152. 如申請專利範圍第148項所述之晶片封裝結構，其中該塡 充層之材質包括環氧化物及聚合物其中之一。 153. 如申請專利範圍第148項所述之晶片封裝結構，其中該有 機薄層之厚度約爲2〜200微米。 154. 如申請專利範圍第148項所述之晶片封裝結構，其中該晶 片組更具有一內部線路及複數個主動元件，且該內部線胳及該些 0主動元件均配置於該晶片組之該主動表面上，而該內部線路係電 性連接至該些主動元件，並且該內部線路係形成該些金屬墊。 155. 如申請專利範圍第154項所述之晶片封裝結構，其中該些 主動元件之一所發出的訊號係可經由該內部線路，而傳遞至該外 部線路，再從該外部線胳經由該內部線路而傳遞至該些主動元件 之另一。 156. 如申請專利範圍第155項所述之晶片封裝結構，其中該外 部線路之線寬、線距及線厚均分別對應大於該內部線路之線寬、 .線距及線厚。 157. 如申請專利範圍第148項所述之晶片封裝結構，其中該外 部線路更包括一電源/接地匯流排。 158. 如申請專利範圍第148項所述之晶片封裝結構，其中該積 層線路層至少包括一圖案化導線層，而該圖案化導線層係配置於 該有機薄層之上，並穿過該有機薄層而電性連接該晶片組之該些 金屬墊’其中該圖案化導線層係構成該外部線路及形成該外部電 -24· 544882 路之該些接合墊。 159. 如申請專利範圍第158項所述之晶片封裝結構，其中該有 機薄層具有複數個貫孔，且該圖案化導線層係穿過該些貫孔而電 性連接該晶片組之該些金屬墊。 160. 如申請專利範圍第159項所述之晶片封裝結構，其中該些 貫孔內分別具有一導電插塞，且該圖案化導線層係經由該些導電 插塞而電性連接該晶片組之該些金屬墊。 161. 如申請專利範圍第160項所述之晶片封裝結構，其中該圖 案化導線層更與該些導電插塞構成該外部線路。 162. 如申請專利範圍第158項所述之晶片封裝結構，其中該外 部線路更包括至少一被動元件。 163. 如申請專利範圍第162項所述之晶片封裝結構，其中該被 動元件包括電阻、電感及電容其中之一。 164. 如申請專利範圍第162項所述之晶片封裝結構，其中該被 動元件係可由該圖案化導線層之部分結構所構成。 165. 如申請專利範圍第148項所述之晶片封裝結構，其中該積 層線路層至少包括複數個圖案化導線層及複數個介電層，而該些 圖案化導線層及該些介電層係依序交錯疊合，且該積層線路層 與該有機薄層之間係爲該些圖案化導線層之一，其中每一該些圖 案化導線層係分別穿過該些介電層之一，而電性連接相鄰之該些 圖案化導線層，且該些圖案化導線層之最接近該有機基板者係穿 過該有機薄層，而電性連接該晶片組之該些金屬墊，其中該些圖 案化導線層係構成該外部線路，且該些圖案化導線層之最遠離該 -25 · 544882 有機基板者係形成該外部線路之該些接合墊。 166. 如申請專利範圍第165項所述之晶片封裝結構，其中該有 機薄層具有複數個第一貫孔，而該些圖案化導線層之最接近該有 機基板者係穿過該些第一貫孔，而電性連接該晶片組之該些金屬 墊，且每一該些介電層分別具有複製個第二貫孔，並且每一該些 圖案化導線層係分別穿過該些貫孔，而電性連接相鄰之該些圖案 化導線層。 167. 如申請專利範圍第166項所述之晶片封裝結構，其中該些 II第一貫孔之內分別具有一第一導電插塞，而該些第二貫孔之內分 別具有一第二導電插塞，且每一該些圖案化導線層係分別經由該 些第二導電插塞，而電性連接相鄰之該些圖案化導線層，並且該 些圖案化導線層之最接近該有機基板者係經由該些第一導電插 塞，而電性連接該晶片組之該些金屬墊。 168. 如申請專利範圍第167項所述之晶片封裝結構，其中該些 圖案化導線層更與該些第一導電插塞及該些第二導電插塞構成該 外部線路。 169. 如申請專利範圍第165項所述之晶片封裝結構，其中該外 部線路更包括至少一被動元件。 170. 如申請專利範圍第169項所述之晶片封裝結構，其中該被 動元件包括電阻、電感及電容其中之一。 171. 如申請專利範圍第165項所述之晶片封裝結構，其中該被 動元件係可由部分該些圖案化導線層之部分結構所構成。 172. 如申請專利範圍第165項所述之晶片封裝結構，其中該些 -26- 544882 介電層之材質包括聚醯亞胺、苯基環丁烯、多孔性介電材料及彈 性緩衝材料其中之一。 173. 如申請專利範圍第148項所述之前片封裝結構，更包括圖 案化之一保護層，其配置於該積層線路層之上，並暴露出該些接 合墊。 174. 如申請專利範圍第148項所述之晶片封裝結構，更包括複 數個接點，其分別配置於該些接合墊上。 175. 如申請專利範圍第174項所述之晶片封裝結構，其中該些 接點之型態包括銲球、凸塊及針腳其中之一。 -27-544882 146 · The chip packaging process described in item 145 of the scope of patent application, in which the packaging structure of these wafers is divided by a single chip as a unit "147. As described in item 145 of the scope of patent application In the chip packaging process, when the packaging structure of the wafers is divided, the division is performed by using a plurality of wafers as a unit. 148. A chip packaging structure including at least: an organic substrate; a chipset having an active surface and a corresponding back surface; and the chipset further having a plurality of metal pads disposed on the active surface. And the chipset is attached to the organic substrate with the back surface; a filling layer is disposed on the organic substrate and surrounds the periphery of the chipset, and the top surface of the filling layer is aligned with The active surface of the chipset; an organic thin layer disposed on the filling layer and the chipset; and a laminated circuit layer 'disposed on the organic thin layer, wherein the laminated circuit layer has an external circuit 'And the external circuits are electrically connected to the metal pads of the chipset' and at least part of the external circuits extend to areas beyond the active surface of the chipset 'and the external circuit has a plurality of bonding pads, It is located on the surface layer of the multilayer circuit layer, and each of the bonding pads is electrically connected to one of the metal pads of the chipset. 149. The chip packaging structure described in item I48 of the patent application scope, wherein the chip group is composed of a single chip. 15. The chip packaging structure according to item U8 of the patent application scope, wherein the chip group is composed of a plurality of chips. 23 · 544882 151. Some of the wafer packaging structures described in the patent application scope No. 15 are part of these wafers are a plurality of wafers with different functions. 152. The chip packaging structure according to item 148 of the scope of patent application, wherein the material of the filling layer includes one of an epoxide and a polymer. 153. The chip packaging structure according to item 148 of the scope of patent application, wherein the thickness of the organic thin layer is about 2 to 200 microns. 154. According to the chip package structure described in item 148 of the scope of patent application, wherein the chipset further has an internal circuit and a plurality of active components, and the internal line and the 0 active components are disposed in the chipset. On the active surface, the internal circuit is electrically connected to the active components, and the internal circuit forms the metal pads. 155. According to the chip package structure described in item 154 of the patent application scope, wherein the signal sent by one of the active components can be transmitted to the external circuit through the internal circuit, and then from the external line to the internal circuit. And pass to another of the active components. 156. The chip packaging structure described in item 155 of the scope of the patent application, wherein the line width, line spacing and line thickness of the external circuit are respectively larger than the line width, line spacing and line thickness of the internal circuit. 157. The chip package structure described in claim 148, wherein the external circuit further includes a power / ground bus. 158. The chip packaging structure according to item 148 of the scope of patent application, wherein the laminated circuit layer includes at least a patterned conductive layer, and the patterned conductive layer is disposed on the organic thin layer and passes through the organic thin layer A thin layer is electrically connected to the metal pads of the chipset, wherein the patterned wire layer constitutes the external circuit and the bonding pads forming the external electrical-24 · 544882 circuit. 159. The chip packaging structure according to item 158 of the scope of patent application, wherein the organic thin layer has a plurality of through holes, and the patterned wire layer passes through the through holes to electrically connect the chips of the chipset. Metal pad. 160. The chip package structure described in item 159 of the scope of the patent application, wherein each of the through holes has a conductive plug, and the patterned wire layer is electrically connected to the chipset through the conductive plugs. The metal pads. 161. The chip package structure according to item 160 of the patent application scope, wherein the patterned wire layer and the conductive plugs form the external circuit. 162. The chip package structure according to item 158 of the scope of patent application, wherein the external circuit further includes at least one passive component. 163. The chip package structure according to item 162 of the patent application scope, wherein the passive element includes one of a resistor, an inductor and a capacitor. 164. The chip package structure according to item 162 of the scope of patent application, wherein the driven element may be composed of a part of the structure of the patterned wire layer. 165. The chip packaging structure according to item 148 of the scope of patent application, wherein the laminated circuit layer includes at least a plurality of patterned conductive layers and a plurality of dielectric layers, and the patterned conductive layers and the dielectric layers are Sequentially staggered and stacked, and the laminated circuit layer and the organic thin layer are one of the patterned conductive layers, wherein each of the patterned conductive layers passes through one of the dielectric layers, The adjacent patterned wire layers are electrically connected, and the closest to the organic substrate of the patterned wire layers passes through the organic thin layer, and the metal pads of the chipset are electrically connected. The patterned conductive wire layers constitute the external circuit, and those patterned conductive wire layers that are farthest from the -25 · 544882 organic substrate are the bonding pads that form the external circuit. 166. The chip packaging structure according to item 165 of the scope of patent application, wherein the organic thin layer has a plurality of first through holes, and the patterned wire layers closest to the organic substrate pass through the first layers. Through-holes, which are electrically connected to the metal pads of the chipset, and each of the dielectric layers has duplicate second through-holes, and each of the patterned wire layers passes through the through-holes respectively , And electrically connect the adjacent patterned wire layers. 167. The chip packaging structure described in item 166 of the scope of patent application, wherein each of the first through holes has a first conductive plug inside, and each of the second through holes has a second conductive plug. Plugs, and each of the patterned wire layers is electrically connected to the adjacent patterned wire layers via the second conductive plugs respectively, and the patterned wire layers are closest to the organic substrate The first conductive plugs are electrically connected to the metal pads of the chipset. 168. The chip package structure according to item 167 of the scope of patent application, wherein the patterned conductive layer and the first conductive plugs and the second conductive plugs constitute the external circuit. 169. The chip package structure according to item 165 of the patent application scope, wherein the external circuit further includes at least one passive component. 170. The chip package structure according to item 169 of the scope of patent application, wherein the passive element includes one of a resistor, an inductor and a capacitor. 171. The chip package structure described in item 165 of the scope of patent application, wherein the passive element may be composed of a part of the structure of the patterned wire layers. 172. The chip packaging structure described in item 165 of the scope of patent application, wherein the materials of the -26-544882 dielectric layers include polyimide, phenylcyclobutene, porous dielectric materials and elastic buffer materials. one. 173. The front-panel package structure described in item 148 of the scope of patent application, further includes a patterned protective layer, which is disposed on the laminated circuit layer and exposes the bonding pads. 174. The chip package structure described in item 148 of the scope of patent application, further includes a plurality of contacts, which are respectively disposed on the bonding pads. 175. The chip package structure described in item 174 of the scope of patent application, wherein the types of the contacts include one of a solder ball, a bump, and a pin. -27-