530344 五、發明說明（1) 【發明領域】 本發明係有關於一種適用於電性連接之導電球結構及 其應用，特別係有關於一種具有焊料包覆球本體之導電 球，以提供在表面結合時之間隔及彈性。 【先前技術】530344 V. Description of the invention (1) [Field of the invention] The present invention relates to a conductive ball structure suitable for electrical connection and its application, and particularly relates to a conductive ball with a solder-coated ball body to provide on the surface Space and flexibility when combined. [Prior art]
習知導電球係接植於基板（如晶片或電路板）之表面 電極（electrodes )上，以作為高密度之表面結合，而習 知導電球多係為錫鉛合金之焊球（s〇lder bai 1 )，當焊 球接植至基板上以作為該基板之外部電性連接端點時，通 常係需先以印刷或電鍍技術形成一焊料，再加熱該焊料使 其迴焊（reflow)形成焊球，而熔接至基板之電極，以供 後續進行表面結合（surface counting)。 在美國專利第6, 0 72, 70 0號「球格陣列封裝结構 中，揭示一種球格陣列封裝結構（BallGri衣八=」The conventional conductive ball is implanted on the surface electrodes of a substrate (such as a wafer or a circuit board) as a high-density surface bonding, and the conventional conductive ball is mostly a tin-lead alloy solder ball (solder). bai 1), when the solder ball is implanted on the substrate as the external electrical connection terminal of the substrate, usually a solder is formed by printing or electroplating technology, and then the solder is heated to make it reflow. Solder balls, and electrodes welded to the substrate for subsequent surface counting. In US Patent No. 6, 0 72, 70, "ball grid array package structure, a ball grid array package structure is disclosed (BallGri clothes eight ="
Package： BGA) 至夕一晶片堆疊於該晶片上， 、 养，i由曰u L 必二曰日片均具有複數個焊 ^、中日日片之焊墊係以複數個引指（如薄膜戋導複） 行内部電性連接，在該基板 丄線） (conductive so der b： m f ^ Ϊ ' ^Package: BGA) A wafer is stacked on the wafer, and it is maintained on the wafer. The wafers have multiple welding pads. The pads of the Japanese and Japanese wafers are provided with multiple fingers (such as thin films).戋 导 复) row of internal electrical connections, on the substrate 丄) (conductive so der b: mf ^ Ϊ '^
焊球係連接該此裸霖之引# der ball)，該些導 ::半導體封装結構，如球格陣列封二!二連；#因此 :金之焊球進行外部電性連接，當錫 再具有機械強度，而無法維 于电性連接之適當間隔，容$ 530344 五、發明說明（2) 導致焊料溢流或電 另在美國專利 之導電聚合球」中 polymer ball)， 屬球體及一包覆該 體之材質係為銅、 如聚二醚酮（p〇ly 脂專電絕緣性之聚 子’在進行表面結 度及剛性之材質， 之外部電性連接端 陣列封裝至一外部 性之聚合物，致其 其電阻係數亦高於 部電路板間之電性 之接合邊緣的熱塑 【發明目的及概要 本發明之主要 電球結構，該導電 料’該球本體形成 或焊料，以確保該 面結合時之電性連 本發明之次一 電球結構，該導電 性連接失敗等問題。 第5 ’ 7 6 1，〇 4 8號「接植於球格陣列封裝 ，揭示一種導電聚合球（c〇nductive、 該供電性連接之導電聚合球係具有一金 金屬球體之熱塑性物質，其中該金屬球 金或銀等導電金屬，而該熱塑性物質係 =heretherketone，PEEK)或熱塑性樹 曰物（polymer )，其含有導電金屬粒 ^時，該實心固體之金屬球體係為高硬 虽=該導電聚合球作為一球格陣列封裝 點時’在加熱（約175t：)壓合該球格x 電路板時，因該熱塑性物質係為電絕緣 導電性不佳，即使其内含有金屬粒子， =焊料’因&，在球㈣列封裝與外 傳V界面，位於外部電路板與金屬球 性物質會產生熱度。 ] 目的在於提供一種適用於電性連接之導 球包含一球本體及一包覆該球本體之焊 Ϊ二貫通孔，該貫通孔内形成有金屬栓 己覆球本體焊料之電性導通，而增進表 接。 目的在於提供一種適用於電性連接之導 球之球本體係被焊料所包覆，以供電性The solder ball is connected to the bare lin lead # der ball), these guides :: semiconductor packaging structure, such as a ball grid array seal two! Two even; # Therefore: gold solder ball for external electrical connection, when the tin then It has mechanical strength but cannot maintain the proper spacing of the electrical connection. The capacity is $ 530344. 5. Description of the invention (2) Causes solder overflow or electricity. In the United States patent, the conductive polymer ball is a polymer ball. It belongs to a sphere and a package. The material covering the body is copper, such as polydiether ketone (Polyester), which is an electrically insulating polymer, which is used for surface bonding and rigidity. The external electrical connection end array is packaged to an external polymerization. Material, which has a higher resistivity than the electrical bonding edge between the circuit boards [Objective and Summary of the Invention The main electric ball structure of the present invention, the conductive material 'the ball body is formed or soldered to ensure the surface The electrical connection at the time of connection is connected to the second electric ball structure of the present invention, the conductive connection fails, and the like. No. 5 '76 1 0, 8 "is implanted in a ball grid array package, revealing a conductive polymer ball (c. nductive, the power supply The conductive polymer ball is a thermoplastic material having a gold metal sphere, wherein the metal ball is a conductive metal such as gold or silver, and the thermoplastic material is = heretherketone (PEEK) or a thermoplastic tree polymer (polymer), which contains conductive metal particles ^ At this time, the solid solid metal ball system is highly rigid, although when the conductive polymer ball is used as a ball grid array packaging point, 'when heating (about 175t :) presses the ball grid x circuit board, the thermoplastic substance is Electrical insulation is poor in conductivity, even if it contains metal particles, = solder 'cause &, at the interface between the ball train package and the external V, located on the external circuit board and metal spherical substances will generate heat.] The purpose is to provide a suitable The electrically connected conductive ball includes a ball body and a through hole for covering the ball body. Two through holes are formed in the through hole, and a metal plug is formed to cover the electrical conduction of the ball body solder to improve surface connection. Provide a ball for guide ball suitable for electrical connection. The system is covered with solder for power supply.
^30344 五、發明說明（3) 1U Ϊ本體係具有彈性及高於焊料熔接之熔點溫度， t、在表面結合時之間隔及彈性接合。 置，另一目的在於提供一種具有導電球之電子裝 ί:球係包含一球本體及-包覆該球本體之焊 形成古1.係具有彈性及高於焊料熔接之熔點溫度，其 伴兮勺通孔，該貫通孔内形成有金屬栓或焊料，以確 之電性導通，而球本體係可提供適ΐ 且使電子裝置具有平整之電性結合面， 且月b確保良好之電性連接。 接棺：本！:月之適用於電性連接之導電球結構，其係用以 ίΐ:ίϊ之連接墊上，以供電性連接，每-導電球係 i ί夕i i及一包覆該球本體之焊料，較佳地，該球 2貝係為高分子聚合物，其具有彈性及高於焊料熔 =之溶』溫度’以提供表面結合時適當之間隔及彈性 係填充於該貫通孔内：是=i、s該包覆球本體之焊料 確保包覆球本體焊以 性連接。 电旺¥通，而增進表面結合時之電 【發明詳細說明】 請f閱所附圖式，本發明將列舉以下之實施例說明： 、“t 之第一具體實施例，如第1圖所示，一具有 二二.1半f體封裝結構100係為一窗口球格陣列封裝結 構击(Wlnd⑽BGA)，其係包含有-晶片U0、-基板120、 後數個電性連接裝置！ 30、_封膠體14〇及複數個導電球 530344 五、發明說明（4) 150，其中該基板120係為具有單層或多層電路之印刷電路 板（printed circuit board，PCB)或是陶瓷電路基板 (ceramic wiring substrate )，其具有一上表面 121、 一下表面122及一窗口 125，該下表面122係形成有複數個 連接墊123 (contact pads)，以供接植導電球150，晶片 11 0係為一記憶體晶片、微處理器、邏輯性晶片或其他晶 片’其具有一主動面111 (active surface)及一非主動 面112 (passive surface)，該主動面111係形成有複數 個焊墊113 (bonding pads)，該晶片110係主動面1】1朝 下以膠帶160黏合至基板120之上表面121，且電性連接裝 置1 3 0係經由基板1 2 0之窗口 1 2 5電性連接晶片11 〇之焊墊 11 3至基板1 2 0之烊墊1 2 4，其中該電性連接裝置1 3 〇係可為 金屬導線或TAB (tape automated bonding，膠帶自動接 合）引指，該晶片110及電性連接裝置丨30係被封膠體14〇 所包覆密封，連接墊123係裸露於基板120之下表面丨22， 而複數個導電球150係接植在連接墊丨23上，以供外部電性 連接’每一導電球150係具有一球本體丨51以及一包覆該球 本體151之焊料152，該球本體151係以蝕刻（etching/或 雷射鑽孔等方式形成一貫通孔丨53，使焊料152填充於貫通 孔1 5 3内，以供電性導通。 、 如第2圖所示，該半導體封裝結構1〇〇係藉由複數個導 電球150表面結合至一外部電路板3 〇〇，較佳地，該 150之球本體151係為電絕緣性，其材質係為高分^聚人物 (Polymer)，如聚亞醯胺（p〇lyimide)、聚對苯二;酸^ 30344 V. Description of the invention (3) 1U Ϊ This system is elastic and has a melting point higher than the melting point of the solder, t, the interval when the surface is bonded, and the elastic joint. Another purpose is to provide an electronic device with a conductive ball: the ball system includes a ball body and-the welding of the ball body is formed 1. the system has elasticity and a melting temperature higher than that of the solder welding, and its accompanying Spoon through hole, a metal plug or solder is formed in the through hole to ensure electrical conduction, and the ball system can provide a suitable and make the electronic device have a flat electrical bonding surface, and ensure good electrical properties connection. Coffin: Ben! : Yuezhi is suitable for electrically connected conductive ball structure, which is used to connect the power supply pads to the connection pads. Each conductive ball is i and the solder covering the ball body is better. Ground, the ball 2 shell system is a high molecular polymer, which has elasticity and a temperature higher than the melting temperature of the solder to provide a proper interval when the surface is bonded and the elasticity is filled in the through hole: Yes = i, s The solder of the coated ball body ensures the soldered connection of the coated ball body. Electricity is increased, and electricity is improved when the surface is bonded. [Detailed description of the invention] Please refer to the attached drawings. The present invention will enumerate the following embodiments: "" the first specific embodiment of t, as shown in Fig. 1 As shown in the figure, a half-body package structure 100 with a 2.2.1 is a window ball grid array package structure (Wlnd⑽BGA), which includes-a chip U0,-a substrate 120, and several electrical connection devices at the end! _Sealing colloid 14 and a plurality of conductive balls 530344 V. Description of the invention (4) 150, wherein the substrate 120 is a printed circuit board (PCB) or a ceramic circuit substrate (ceramic) having a single-layer or multi-layer circuit wiring substrate), which has an upper surface 121, a lower surface 122, and a window 125. The lower surface 122 is formed with a plurality of contact pads 123 (contact pads) for receiving conductive balls 150, and the wafer 110 is a A memory chip, a microprocessor, a logic chip or other chip 'has an active surface 111 (active surface) and a non-active surface 112 (passive surface). The active surface 111 is formed with a plurality of bonding pads 113 (bonding pads), the chip 11 0 series active surface 1] 1 is adhered to the upper surface 121 of the substrate 120 with the adhesive tape 160 facing downward, and the electrical connection device 1 3 0 is electrically connected to the wafer 11 through the window 1 2 0 of the substrate 1 2 and the pad 11 of the 〇 3 to the substrate 1 2 0 of the pad 1 2 4, wherein the electrical connection device 1 3 0 can be a metal wire or TAB (tape automated bonding), the chip 110 and the electrical connection device 丨The 30 series is sealed by the sealing gel 14, the connection pad 123 is exposed on the lower surface of the substrate 120 22, and the plurality of conductive balls 150 are planted on the connection pad 23 for external electrical connection. A conductive ball 150 has a ball body 51 and a solder 152 covering the ball body 151. The ball body 151 is a through hole 53 formed by etching (or laser drilling), so that the solder 152 It is filled in the through-holes 153 for power supply conduction. As shown in FIG. 2, the semiconductor package structure 100 is bonded to an external circuit board 300 by the surface of a plurality of conductive balls 150, preferably Ground, the ball body 151 of the 150 is electrically insulating, and its material is a high-scoring figure (P olymer), such as polyimide, polyterephthalate; acid
530344530344
五、發明說明（5) 乙一酉旨（Polyethylene Terephalate，PET)、聚對荼二 甲酸乙二酷（Polyethylene naphthalate，PEN)、石夕膠 或橡膠等等，使球本體丨5 1係具有適當之彈性，且其熔點 溫度係大於焊料1 52之熔接溫度，使得表面結合時球本體 1 5 1不隨著加熱焊料丨5 2而熔化，如第3圖所示，較佳地， 另以電鍍方式在該球本體151表面形成一金屬電鍍層丨54 (如鎳或金），以利於焊料丨52附著包覆於球本體丨51，且 球本體151之貫通孔153兩端係形成有導角155，以利於該 焊料1 5 1填充形成於貫通孔丨5 1内。V. Description of the invention (5) Polyethylene Terephalate (PET), Polyethylene naphthalate (PEN), stone rubber or rubber, etc., make the ball body 丨 5 1 series have appropriate Elasticity, and its melting point temperature is greater than the welding temperature of the solder 152, so that the ball body 1 5 1 does not melt with the heating of the solder when the surface is bonded, as shown in FIG. 3, preferably, it is also electroplated A metal plating layer 54 (such as nickel or gold) is formed on the surface of the ball body 151 to facilitate solder adhesion 52 to cover the ball body 51, and a lead angle 155 is formed at both ends of the through hole 153 of the ball body 151 In order to facilitate the filling of the solder 1 5 1 in the through hole 5 1.
如第2圖所示，當該半導體封裝結構1〇〇表面結合至夕i 部電路板30 0時，該些導電球丨5〇之球本體151不受到在表 面結合時所產生之壓力與高溫（約200至500 °C)之影響， 球本體1 5 1係不會變形、熔化、損毀或破裂，而能支撐該 半導體封裝結構1〇〇，使半導體封裝結構丨〇〇與電路板3〇q 之間保持一適當之間隔，使得包覆球本體151之焊料152巧 ^因壓合電性連接時擴散溢流造成短路，且具彈性之球4 體151係位於半導體封裝結構1〇〇與電路板3〇〇間之結合界 面田半導體封裝結構1 〇 〇壓合至電路板3 〇 〇時，結合界δ 具有球本體1 5 1作為彈性緩衝，因此不會壓損半導 結，，且在表面結合後，在結合界面處 m係可由具彈性之球本體151吸收，冑半導體封裝結 之晶片110不會隨基板120之翹曲（warPing)而變 ^或j貝毀，另，因焊料152係填充於球本體i5i之貫通孔 構成電性導通路徑，在表面結合時，焊料丨5 2能 530344 五、發明說明（6) 經由貫通孔153維持電性導通，使包覆球本體151之As shown in FIG. 2, when the semiconductor package structure 100 is bonded to the circuit board 300 on the surface, the conductive balls 501 and the ball body 151 are not subjected to the pressure and high temperature generated during the surface bonding. (About 200 to 500 ° C), the ball body 1 51 will not deform, melt, damage or crack, but can support the semiconductor package structure 100, the semiconductor package structure 丨 〇〇〇 and the circuit board 3〇 q Keep a proper distance between them, so that the solder 152 covering the ball body 151 is short-circuited due to diffusion overflow when the electrical connection is pressed, and the elastic ball 4 body 151 is located in the semiconductor package structure 100 and When the bonding interface between the circuit board 300 and the semiconductor package structure 1000 is pressed onto the circuit board 3000, the bonding boundary δ has a ball body 1 51 as an elastic buffer, so the semiconductor junction will not be damaged, and After the surface bonding, m is absorbed by the elastic ball body 151 at the bonding interface. The semiconductor packaged wafer 110 will not change or warp with the warping of the substrate 120. In addition, due to solder 152 is a through hole filled in the i5i body. Conduction path, in conjunction with the surface, the solder 52 can Shu 530,344 V. described (6) of the invention is maintaining electrical conduction through the through hole 153, so that the coated ball body 151
能電性連接基板12〇之連接墊123與電路板3〇〇之連接墊 〇，因★此，確保半導體封裝結構1 〇〇之外部電性連接。 、如第4圖所示係為本發明之第二具體實施例，具有導 電球之半導體封裝結構200係為一球格陣列封裝結^冓，其 係包含有一晶片210、一基板220、複數個電性^°接裝置、 230、一封膠體240及複數個導電球25〇，其中該基板係 為印刷電路板或是陶瓷電路板，其下表面222係形成有複 數個連接墊223，以供接植導電球2 50，而晶片21〇之非主 動面212係以黏膠260黏合至基板22 0之上表面221，該晶片 2 1 0之主動面2 11係形成有複數個焊墊2丨3，並以電性連接 裝置230電性連接至基板22〇之上表面221之焊墊224，另以 封膠體240包覆密封晶片210及電性連接裝置23〇，並裸露 基板220之連接墊223，而複數個導電球250係接植在連接 墊2 2 3上，以供外部電性連接。The connection pad 123 of the substrate 12 can be electrically connected to the connection pad 〇 of the circuit board 300. Therefore, the external electrical connection of the semiconductor package structure 100 is ensured. As shown in FIG. 4, it is a second specific embodiment of the present invention. The semiconductor package structure 200 with conductive balls is a ball grid array package structure, which includes a wafer 210, a substrate 220, and a plurality of Electrical connection device, 230, a piece of gel 240, and a plurality of conductive balls 250, wherein the substrate is a printed circuit board or a ceramic circuit board, and a plurality of connection pads 223 are formed on the lower surface 222 thereof for The conductive ball 2 50 is implanted, and the non-active surface 212 of the wafer 21 is bonded to the upper surface 221 of the substrate 22 0 with an adhesive 260. The active surface 2 11 of the wafer 2 1 0 is formed with a plurality of pads 2 丨3, and is electrically connected to the bonding pad 224 on the upper surface 221 of the substrate 22 with an electrical connection device 230, and the sealing chip 210 and the electrical connection device 23 are covered with a sealing compound 240, and the connection pad of the substrate 220 is exposed 223, and a plurality of conductive balls 250 are planted on the connection pad 2 2 3 for external electrical connection.
如第5圖所示，每一導電球250係具有一球本體251及 包覆該球本體2 51之焊料2 5 2，較佳地，該球本體2 51係為 電絕緣性，其材質係為高分子聚合物（polyme：r )，如聚 亞醯胺（polyimide)、聚對苯二曱酸乙二酯 (Polyethylene Terephalate，PET)、聚對荼二甲酸乙 二酯（Polyethylene naphthalate，PEN)、矽膠或橡膠 等等，使球本體251係具有適當之彈性，且其熔點溫度係 大於表面結合時之熱壓合溫度（約200至500 °C)，使其在 表面結合時不致變形、熔化、損毁或破裂，球本體2 5 1係As shown in FIG. 5, each conductive ball 250 has a ball body 251 and a solder 2 5 2 covering the ball body 2 51. Preferably, the ball body 2 51 is electrically insulating, and its material is Polymers (polyme: r), such as polyimide, polyethylene terephalate (PET), and polyethylene naphthalate (PEN) , Silicone or rubber, etc., to make the ball body 251 have appropriate elasticity, and its melting point temperature is greater than the hot pressing temperature (about 200 to 500 ° C) during surface bonding, so that it will not deform and melt during surface bonding , Damaged or broken, ball body 2 5 1 series
第10頁 530344 五、發明說明（7) 形成有一貫通孔253，該貫通孔253内係形成有一金屬检 254，以供電性導通，該金屬栓254之材料係如銅、金= 等導電金屬，且該金屬栓254係呈近I形，使其兩端具有^ 位部255，使金屬栓254能穩固嵌合於貫通孔253内，而不 脫出，4限位部2 5 5亦能增加金屬栓2 5 4與焊料2 5 2之接觸 面積’當半導體封裝結構20 0表面結合至一外部電路板 時，藉由該些導電球2 50電性連接基板22〇與電路板，其球 本體251係支撐半導體封裝結構20 0而保持一間隔，使基板 220與電路板間在壓合電性連接時，焊料252不會溢流^散 造成紐路，且焊料252經由貫通孔2 53之金屬栓254維持電 性導通，不致產生電性斷路，而確保表面結合時之電性連 接。 依本發明之第三具體實施例，如第6圖所示，一電子 裝置400係包含有一基板41 〇及至少一導電球“ο，該基板 410係可為一晶片（chip )、晶圓（wafer )、印刷電路板 (PCB)、陶瓷基板（ceramic substrate)或薄膜（thin film )，該基板4l〇之表面係形成有至少一連接，4n，而 該導電球420係具有一球本體“I以及一包覆該球本體42ι 之焊料422，較佳地，該球本體421係為電絕緣性，其材質 係為具適當彈性之高分子聚合物（p〇 1 ymer )，且其溶點 溫度係大於焊料422之熔接溫度，使球本體421在表面結合 時不致變形、熔化、損毀或破裂，且球本體42 1係形成有 一貫通孔423，在本實施例中，該貫通孔423内係形成有一 金屬栓424，以供電性導通，且該金屬栓424係呈近I形，Page 10 530344 V. Description of the invention (7) A through-hole 253 is formed, and a metal detector 254 is formed in the through-hole 253 to conduct electricity. The metal plug 254 is made of conductive metals such as copper and gold. In addition, the metal bolt 254 has a nearly I shape, and has ^ position portions 255 at both ends, so that the metal bolt 254 can be firmly fitted in the through hole 253 without being detached, and the 4 limit portion 2 5 5 can also be increased. The contact area of the metal plug 2 5 4 and the solder 2 5 2 'When the surface of the semiconductor package structure 20 0 is bonded to an external circuit board, the conductive balls 2 50 are electrically connected to the substrate 22 and the circuit board, and the ball body thereof 251 supports the semiconductor package structure 200 and maintains a gap, so that when the substrate 220 and the circuit board are pressed and electrically connected, the solder 252 does not overflow and disperse to form a new circuit, and the solder 252 passes through the metal of the through hole 2 53 The plug 254 maintains electrical conduction, does not cause electrical disconnection, and ensures electrical connection during surface bonding. According to a third specific embodiment of the present invention, as shown in FIG. 6, an electronic device 400 includes a substrate 41 0 and at least one conductive ball “ο. The substrate 410 may be a chip, a wafer ( wafer), printed circuit board (PCB), ceramic substrate or thin film, the surface of the substrate 4l0 is formed with at least one connection, 4n, and the conductive ball 420 has a ball body "I And a solder 422 covering the ball body 42m, preferably, the ball body 421 is electrically insulating, and its material is a high-molecular polymer (p〇1 ymer) with appropriate elasticity, and its melting point temperature It is higher than the welding temperature of solder 422, so that the ball body 421 will not be deformed, melted, damaged or broken during surface bonding, and the ball body 421 is formed with a through hole 423. In this embodiment, the through hole 423 is formed inside There is a metal plug 424, which is electrically conductive, and the metal plug 424 is nearly I-shaped.
第11頁 530344 五、發明說明（8) ^其，端具有限位部425，該限位部425係使金屬栓424能 %、固肷合於貫通孔423内，並增加焊料422與金屬栓424之 ，觸面積，該接植有導電球42〇之電子裝置，係供電性 ;^之^，相較於習知以錫鉛合金之焊球（solder bal 1 〕進仃電性連接之電子裝置，在表面結合時，該導電球 呈有^平之間隔及彈性接合，使電子裝置4〇〇 電'Um面，藉由金屬栓424確保焊物之 性連：致產生電性斷路，而能增進表面結合時之電 附之申請專利範圍所界定 在不脫離本發明之精神和 均屬於本發明之保護範Page 11 530344 V. Description of the invention (8) ^ It has a stopper 425 at the end. The stopper 425 enables the metal plug 424 to be fully fixed in the through hole 423, and adds solder 422 and the metal plug. 424, the contact area, the electronic device implanted with the conductive ball 42, is a power supply; ^ of ^, compared to the conventional tin-lead alloy solder ball (solder bal 1) into the electronically connected electronic When the device is bonded on the surface, the conductive ball has a flat space and elastic bonding, so that the electronic device has an electrical surface of 400 Um. The metal plug 424 ensures the sexual connection of the solder: causing an electrical disconnection, and The scope of patent application that can improve the surface bonding is defined without departing from the spirit of the invention and belongs to the protection scope of the invention
、故本發明之保護範圍當視後 者為準，任何熟知此項技藝者， 範圍内所作之任何變化與修改， 圍。Therefore, the scope of protection of the present invention shall be subject to the latter, and any changes and modifications made within the scope of anyone skilled in the art shall be considered.
第12頁 530344Page 12 530344
圖 第2 圖 依本發明第一具體實施例 體封裝結構截面圖； 第3圖 第4圖 第5圖 第6圖 ^ : ϋ w貝㈣一 _封h Μ:ϊ! 性連接至外部電路板之截面圖^ 、:么明第—具體實施例，該適用於電性遠 導電球之截面放大圖； 电丨生連接$ 依本發明之第二具體實施例 導體封裝結構截面圖； 一具有導電球之半 【圖號說明】 依本發明之第二具體實施例 之導電球之截面放大圖；及 依本發明之第三具體實施例 子裝置之截面圖。 該適用於電性連接 一具有導電球之電 Ο 1 0 0半導體封裝結構 110晶片 111主動面 1 2 0基板 112非主動面 113焊墊Figure 2 is a cross-sectional view of a body package structure according to the first embodiment of the present invention; Figure 3, Figure 4, Figure 5, Figure 6 ^: ϋ w 贝 ㈣ 一 _ 封 h Μ: ϊ! Is connected to an external circuit board Cross-section view ^ :: Ming Ming—a specific embodiment, which is an enlarged cross-sectional view of an electric remote conductive ball; electrical connection $ A cross-sectional view of a conductor package structure according to a second embodiment of the present invention; Ball half [Illustration of drawing number] An enlarged sectional view of a conductive ball according to a second embodiment of the present invention; and a sectional view of a device according to a third embodiment of the present invention. This is suitable for electrical connection. Electricity with conductive balls. 0 1 0 0 Semiconductor package structure 110 chip 111 active surface 1 2 0 substrate 112 non-active surface 113 solder pad
121 上表面 1 2 3 連接墊 130電性連接裝置 1 5 0導電球 1 5 1 球本體 1 5 3貫通孔 1 2 2下表面 1 2 4 焊墊 1 4 0 封膠體 1 5 2 焊料 1 54金屬電鍍層 125 窗口121 upper surface 1 2 3 connection pad 130 electrical connection device 1 5 0 conductive ball 1 5 1 ball body 1 5 3 through hole 1 2 2 lower surface 1 2 4 solder pad 1 4 0 sealant 1 5 2 solder 1 54 metal Plating layer 125 window
155導角155 lead angle
第13頁 530344 圖式簡單說明 160 膠帶 200 半 導 體 封裝 結構 210 晶 片 211 主 動 面 212 非 主 動面 213 焊 墊 220 基 板 221 上 表 面 222 下 表 面 223 連 接 塾 224 焊 墊 230 電 性 連 接裝 置240 封 膠 體 250 導 電 球 251 球 本 體 252 焊 料 253 貫 穿 孔 254 金 屬 栓 255 限 位 部 260 黏 膠 300 電 路 板 310 連 接 墊 400 電 子 裝 置 410 基 板 411 連 接 墊 420 導 電 球 421 球本 體 422 焊 料 423 貫 穿 孔 424 金 屬 栓 425 限 位 部Page 13 530344 Brief description of the diagram 160 Tape 200 Semiconductor packaging structure 210 Wafer 211 Active surface 212 Non-active surface 213 Welding pad 220 Substrate 221 Upper surface 222 Lower surface 223 Connection 塾 224 Welding pad 230 Electrical connection device 240 Sealant 250 Conductive Ball 251 Ball body 252 Solder 253 Through hole 254 Metal bolt 255 Stopper 260 Adhesive 300 Circuit board 310 Connection pad 400 Electronic device 410 Substrate 411 Connection pad 420 Conductive ball 421 Ball body 422 Solder 423 Through hole 424 Metal plug 425 Limit unit
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91109982ATW530344B (en) | 2002-05-10 | 2002-05-10 | Conductive ball for electrical connection and applications thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91109982ATW530344B (en) | 2002-05-10 | 2002-05-10 | Conductive ball for electrical connection and applications thereof |
| Publication Number | Publication Date |
|---|---|
| TW530344Btrue TW530344B (en) | 2003-05-01 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91109982ATW530344B (en) | 2002-05-10 | 2002-05-10 | Conductive ball for electrical connection and applications thereof |
| Country | Link |
|---|---|
| TW (1) | TW530344B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7365440B2 (en) | 2004-10-04 | 2008-04-29 | Sharp Kabushiki Kaisha | Semiconductor device and fabrication method thereof |
| US9219030B2 (en) | 2012-04-16 | 2015-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package on package structures and methods for forming the same |
| US9673182B2 (en) | 2012-12-28 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package bonding structure and method for forming the same |
| US11264342B2 (en) | 2012-04-16 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package structure and method for forming the same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7365440B2 (en) | 2004-10-04 | 2008-04-29 | Sharp Kabushiki Kaisha | Semiconductor device and fabrication method thereof |
| US9219030B2 (en) | 2012-04-16 | 2015-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package on package structures and methods for forming the same |
| US9711470B2 (en) | 2012-04-16 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package on package structure and method for forming the same |
| US10177104B2 (en) | 2012-04-16 | 2019-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package on package structure and method for forming the same |
| US10559546B2 (en) | 2012-04-16 | 2020-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package on package structure and method for forming the same |
| US11264342B2 (en) | 2012-04-16 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package structure and method for forming the same |
| US9673182B2 (en) | 2012-12-28 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package bonding structure and method for forming the same |
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| GD4A | Issue of patent certificate for granted invention patent | ||
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