494266 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（1) (―)發明領域： 本發明係揭露出一種薄膜電晶體液晶顯示器（TFT LCD; Thin Film Transistor Liquid Crystal Display)製作 方法，用以大幅減少製作薄膜電晶體液晶顯示器所需的 製程步驟，並提昇產品良率以降低製作成本。 (二）發明背景： 目前平面顯示器技術開發中，包括有場發射顯示器 (FED; Field Emission Display )、電獎顯示器（PDP; Plasma Display)及液晶顯示器（LCD; Liquid Crystal Display)等，其中又以LCD之技術較爲成熟，由LCD應 用的產品及市場銷售値，每年均以倍數成長可看出其重 要性，其中薄膜電晶體液晶顯示器（TFT LCD; Thin Film Transistor Liquid Crystal Display)之色彩及品質足以和 陰極射線管（CRT; Cathode Ray Tube)競爭。 傳統薄膜電晶體液晶顯示器（TFT LCD)的製程是 以沈稹方式，把液晶顯示器的各層結構逐步沈積堆疊到 玻璃基板上，在此，以背面通道蝕刻（Back-Channel Etch)的製程所得到的反轉堆疊式結構（Inverted-Stagger Structure)爲例，其步驟說明如下： (1) 沈積第一金屬層（first-metal) 2在基板1上（參考 圖1⑻）； (2) 應用第一光罩（first-mask)制定閘極（Gate)區 3，並去除閘極區以外的第一金屬層（參考圖 1(b)); 2 本紙張尺度適用中國國家標隼（CNS) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 494266 A7 B7 五、發明説明（2) (3) 依續沈積氮矽化合物（SiNx) 4薄膜、非晶矽（A-Si; Amorphous Silicon)薄膜5及N+型非晶砂 (N+-A-Si ; N+- Amorphous Silicon )薄膜6 (參 考圖1(c)); (4) 應用第二光罩（Second-mask )制定島區 (island) 7，並去除島區外的A_Si/N+-A-Si薄膜 (參考圖1(d)); (5) 沈積銦鍚氧化物（ITO; Indium Tin Oxide) 8 (參 考圖1(e)); (6) 應用第三光罩（Third-mask)制定透光控制電極 區，並去除該電極區以外的IT08薄膜且應用第四 光罩（Forth-mask)蝕刻週邊電路接點開口 (Contact open )(參考圖 1②）； (7) 沈積第二金屬層（Second_metal) 10 (參考圖 1(g)) ^ (8) 應用第五光罩制定源極11 (S; Source)汲極12 (D; Drain)和資料線（Data Line) 14區域，同 時除去該區域外的第二金屬層10和在源極汲極之 間通道（channel)上的N+-A-Si層6 (參考圖 1⑻）； (9) 沈積保護層（passivation) 13 (參考圖l(i)); (10)應用第六光罩制定保護層區域，露出週邊電路接 點開口及ITO區域，以減少在IT08上不必要的電 場損耗，TFT LCD元件結構製程於焉完成（參考 1--T-----IU---.--.— 訂^------ (請先閲讀背面之注意事項再填寫本頁) 本紙張又度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 494266 五、發明説明（j ) 圖1⑴及1⑻，·分別爲TFT LCD結構縱剖面圖及橫 剖面圖，其中，儲存電容以15表示）。 傳統以反轉堆疊技術製作薄膜電晶體液晶顯示器，有 以下的缺點，說明如下： (a) TFT LCD元件之源極、汲極、資料線金屬層和ITO 像素均位在同一平面上，因此，在製作TFT LCD 過程中之曝光精確度不足或有微粒附著的情況 時，該源極鬧極和ITO像素就很容易造成短路， 而間接地在螢光幕上形成點缺陷（point defect)。根據統計，傳統TFT LCD製作失敗的 原因中，共平面短路缺失（coplanar short defect) 是構成良率偏低的主要因素之一。 (b) 薄膜電晶體閘極動作時所產生的側向電場，會導 致部份液晶分子逆向傾斜（reverse tilt)，因此， 每一個液晶顯示器像素均需要一定面積的遮光矩 ，陣（Black Matrix)，一般而言，是以金屬層來遮 蔽掉具有逆向傾斜之部份液晶分子所產生的漏 光，但若遮光矩陣面積太大時，則會導致液晶顯 示器透光面積比（open ratio)的下降，因而影響 到液晶顯示器畫面的亮度。 (e)利用ITO像素和閘極金屬線上下重疊而形成儲存電 容，但，該儲存電容値很難維持定値，其原因是 在於製作TFT LCD元件過程中，由於光罩對準誤 差或蝕刻誤差所造成的上下電極板面積大小不 4 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ------- (請先閲讀背面之注意事項再填寫本頁) --訂 494266 A7 B7 五、發明説明（斗） 同，而間接影響到各像素的臨界電壓，進而降低 液晶顯示器畫面品質。 (d)另外，在沈積氮矽化合物（SiNx)絕緣層時，若 其沈積結構不良，則ITO像素和閘極金屬線上下 重叠處容易發生短路，即造成垂直方向不同層次 的短路（interlayershort)。 (三）發明的簡軍說明： 本發明的目的是在於提供一種薄膜電晶體液晶顯示器 (TFT LCD)之製造方法，該方法可以利用絕緣層把 TFT LCD元件結構中的ITO和第二金屬層隔離在不同平 面上，以減少TFT LCD發生共平面短路的機會，增加產 品良率。 經濟部中央標準局員工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁) Φ 本發明的另一目的是在於提供一種薄膜電晶體液晶顯 示器之製造方法，應用第二金屬層位於第一金屬層之上 的結構，使第二金屬層可以遮蔽掉部份第一金屬層動作 時所產生的電場，以降低液晶分子逆向傾斜效果 (reverse tilt)，進而減少閘極側向電場（gate lateral field)，因此，每一個TFT LCD像素只需要較小面積的 遮光矩陣（Black Matrix)，即可提昇TFT LCD透光面 積比（open ratio)。 本發明的另一目的是在於提供一種薄膜電晶體液晶顯 示器之製造方法，僅需要利用5道光罩，就可以得到高 透光率的TFT LCD，如此簡化製程步驟以降低製作TFT LCD所需的成本。 5 本紙張尺度適用中國國家標準（CNS )八4規格（210 X297公釐） 經濟部中央標準局員工消費合作社印策 494266 A7 B7 _ 五、發明説明（5 ) 本發明的另一目的是在於提供一種薄膜電晶體液晶顯 示器製作方法，係利用第二金屬層覆蓋在第一金屬層之 上，形成儲存（Cs; storage capacitor)電容，且第二金屬 層延伸超過第一金屬層之範圍，所以在製作TFT LCD 時，可以減少光罩對準誤差或蝕刻誤差所造成的上下電 極板面積大小不同，因此，得到的儲存電容値較穩定， 用以確保LCD中各像素均有相同的開-關（ON-OFF)臨 界電壓（Threshold Voltage)，以提昇畫面品質。 本發明的再一目的是在於提供一種薄膜電晶體顯示器 之結構，乃利用電荷儲存機構漂移（storage floating)的 設計，可同時降低在LCD結構中的垂直方向不同層次間 的短路（interlayer short)及降低LCD結構中的共平面 短路，以大幅提昇產品良率。 (四）圖示的簡單說明： 圖一係爲傳統利用反轉堆疊技術製作薄膜電晶體液晶 ，顯示器之製程步驟及其結構側視圖。 圖二係爲本發明第一個實施例之薄膜電晶體液晶顯示 器之製程步驟及其結構側視圖。 圖三係爲本發明第二個實施例，利用背面通道蝕刻技 術製作具有浮動儲存電容之薄膜電晶體液晶顯示 器之製程步驟及其結構側視圖。 圖四係爲本發明第三個實施例，利用蝕刻終止層技術 製作薄膜電晶體液晶顯示器之製程步驟及其結構 側視圖。 _ 6 _ _ ·Β_ϋ— ·>ϋϋ ϋ>ϋ— mu ϋΒϋ —ϋ (請先閱讀背面之注*·事項再填寫本頁) I訂 本紙張尺度適用中國國家樣準（CNS ) A4規格（210X297公釐） 494266 A7 B7 五、發明説明（6 ) 圖號說明= 經濟部中央標準局員工消費合作社印製 1_某板 3-第一金屬閘極 4_氮化矽層 5-非晶矽層 6-π非晶矽層 心銦錫氧化物 10-第二金屬層 11_源極 12_汲極 13-保護層 14-資料線 15-儲存電容 20-基板 40-第一金屬閘極 50-氮化矽層 60-非晶矽層 70-Ν^非晶矽層 90-第二金屬層 100-儲存電容電極 110-源極 120-汲極 130-儲存電容板區. 140-薄膜電晶體通道區 150_保護層 190-控制透光率的電極區 200-銦錫氧化物 320-基板 340-第一金屬閘極 350-氮化矽層 360-非晶矽層 370-Γ^非晶矽層 390-第二金屬層 400·儲存電容漂移電極 410_源極 420_汲極 440-薄膜電晶體通道區 450_保護層 500-控制透光率的電極區 520-基板 540-聞極 7 (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 494266 A7 B7 五、發明説明（1 550-氮化矽層 570-氮化砂終止層 390-矿非晶矽層 610-儲存電容電極 630-汲極 640-儲存電容板區 650-薄膜電晶體通道區 660·保護層 720-控制透光率的電極區 560-非晶矽層 580-氮化矽終止層 600·第二金屬層 620-源極 -------------- (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 (五）發明的詳細說明： 請參考圖2，係爲本發明第一個實施例利用背面通道 飽刻（Back Channel Etching)技術製作薄膜電晶體液晶 顯示器（TFT LCD; Thin Film Liquid Crystal Display)之 製作方法步驟及其截面構造圖，說明如下： 首先，請參考第2A圖，如同傳統製程，利用金屬濺 鍍等方式沈積第一金屬層30 (金屬元素爲Ta，Cr，Mo, Ti 或Al)在玻璃基板20上，該金屬層厚約2000埃。 請參考第2B圖，以傳統光罩（第一光罩）蝕刻技術 制定TFT LCD閘極40線區。 請參考第2C圖，利用化學氣相沈積法（CVD; Chemical Vapor Deposition)在 TFT LCD 聞極區域40及部 份基板20上依續沈積氮矽（SiNx)化合物50，厚約4000 埃，非晶政層6〇 (A-Si; Amorphous Silicon)(或複晶砂 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 494266 經濟部中央標準局員工消費合作社印製 A7 B7 _ 五、發明説明) (Poly-Si))，厚約1500埃，以及具有Ν+型離子植入的非晶 矽層7〇(N+A-Si)(或具有N+型離子植入的複晶矽 (N+Poly-Si))，厚約500埃。 請參考第2D圖，應用第二光罩，以微影蝕刻技術在 該閘極正上方的閘極絕緣層上，適當制定TFT LCD島區 80，選擇性地形成一半導體層和歐姆接觸層堆叠式結 構，該結構之半導體層在下，歐姆接觸層在上；並去除 島區80以外沈積在SiNx上的A-Si (或Poly -Si)及N+型A-Si (或N+Poly-Si)層。 請參考第2E圖，利用金屬濺鍍等方式沈積第二金屬 層90 (金屬元素爲Cr，Al，Ti或Mo )，厚度約5000埃。 請參考第2F圖，應用第三光罩以傳統蝕刻方式制定資 料線區（未顯示）、薄膜電晶體源極（S; Source) 110、 汲極（D; Drain) 120和儲存電容電極100及儲存電容板區 130，並去除該區域100、110、120及130以外的第二金屬 層90;再利用尙覆蓋在第二金屬層上的光阻，利用蝕刻 技術繼續對部份N+型非晶矽（N+_A_Si)(或N+Poly _ Si)層70進行蝕刻（即，選擇性的移去歐姆接觸層），以 制定薄膜電晶體通道區140。由於，由第二金屬層製作而 成的儲存電容電極100延伸超過由第一金屬層製作而成的 閘極區域40之範圍，因此，可以避免因光罩對準誤差或 蝕刻誤差所造成的儲存電容不穩定，和透明電極間距離 近所造成的短路，以提昇畫面品質。 9 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇><297公釐） (請先閲讀背面之注意事項再填寫本頁)494266 A7 B7 printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (1) (―) Field of invention: The present invention discloses a method for manufacturing a thin film transistor liquid crystal display (TFT LCD; Thin Film Transistor Liquid Crystal Display) , Used to greatly reduce the process steps required to make thin film transistor liquid crystal displays, and improve product yield to reduce production costs. (II) Background of the Invention: The current development of flat panel display technology includes Field Emission Display (FED), Plasma Display (PDP), and Liquid Crystal Display (LCD). The technology of LCD is relatively mature. The importance of LCD products and market sales can be seen in the growth rate of multiples each year. Among them, TFT LCD (Thin Film Transistor Liquid Crystal Display) color and quality Enough to compete with Cathode Ray Tube (CRT). The traditional thin film transistor liquid crystal display (TFT LCD) manufacturing process is a immersive method, which gradually deposits and stacks the layers of the liquid crystal display on a glass substrate. Here, it is obtained by the back-channel etching process. Inverted-Stagger Structure is taken as an example, and the steps are described as follows: (1) depositing a first-metal layer 2 on a substrate 1 (refer to FIG. 1⑻); (2) applying the first light The first-mask designates the gate area 3 and removes the first metal layer outside the gate area (refer to Figure 1 (b)); 2 This paper size applies to China National Standard (CNS) A4 specifications ( 210X 297mm) (Please read the notes on the back before filling out this page) Order printed by the Central Consumers Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative 494266 A7 B7 V. Description of the invention (2) (3) Nitrogen and silicon compounds (SiNx ) 4 thin films, A-Si; Amorphous Silicon thin films 5 and N + amorphous sand (N + -A-Si; N +-Amorphous Silicon) thin films 6 (refer to Figure 1 (c)); (4) Applications The second mask (Second-mask) formulates island 7 and removes A_Si / N + -A outside the island. -Si film (refer to Figure 1 (d)); (5) deposit Indium Tin Oxide (ITO) 8 (refer to Figure 1 (e)); (6) apply a third mask (Third-mask) Develop a light-transmitting control electrode area, remove the IT08 film outside the electrode area, and apply a fourth mask (Forth-mask) to etch the contact opening of the peripheral circuit (refer to Figure 1②); (7) deposit a second metal Layer (Second_metal) 10 (refer to Figure 1 (g)) ^ (8) Use the fifth mask to develop the source 11 (S; Source) drain 12 (D; Drain) and data line (Data Line) 14 area, at the same time Excluding the second metal layer 10 outside the region and the N + -A-Si layer 6 on the channel between the source and drain electrodes (refer to FIG. 1⑻); (9) deposition of a passivation layer 13 (refer to FIG. 1) l (i)); (10) The sixth photomask is used to formulate the protective layer area to expose the openings of the peripheral circuit contacts and the ITO area to reduce unnecessary electric field losses on IT08. The TFT LCD element structure manufacturing process is completed (see 1--T ----- IU ---.--.— Order ^ ------ (Please read the notes on the back before filling out this page) This paper is again applicable to the Chinese National Standard (CNS) A4 specifications (210X297 male ) Ministry of Economic Affairs Bureau of Standards staff consumer cooperative printing 494,266 V. Description of the Invention (j) and FIG 1⑴ 1⑻, ·, wherein the storage capacitor 15 are expressed as a cross-sectional view of a vertical cross-sectional view and a TFT LCD structure). Traditionally, the thin film transistor liquid crystal display produced by the inverted stacking technology has the following disadvantages, which are explained as follows: (a) The source, drain, data line metal layer, and ITO pixels of the TFT LCD element are all on the same plane. Therefore, When the exposure accuracy in the process of making a TFT LCD is insufficient or particles are attached, the source electrode and the ITO pixel can easily cause a short circuit, and indirectly form a point defect on the screen. According to statistics, among the reasons for the failure of traditional TFT LCD fabrication, coplanar short defect is one of the main factors that constitutes a low yield. (b) The lateral electric field generated during the operation of the thin film transistor gate will cause some liquid crystal molecules to reverse tilt. Therefore, each LCD pixel needs a certain area of shading moment. In general, a metal layer is used to shield the light leakage generated by some liquid crystal molecules with reverse tilt, but if the area of the light-shielding matrix is too large, it will lead to a decrease in the open ratio of the liquid crystal display. Therefore, the brightness of the LCD screen is affected. (e) Storage capacitors are formed by overlapping ITO pixels and gate metal lines. However, it is difficult to maintain a fixed storage capacitor. The reason is that during the fabrication of TFT LCD elements, due to mask alignment errors or etching errors, The size of the upper and lower electrode plates is not 4 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ------- (Please read the precautions on the back before filling this page)-Order 494266 A7 B7 V. The description of the invention (fighting) is the same, which indirectly affects the threshold voltage of each pixel, thereby reducing the picture quality of the liquid crystal display. (d) In addition, when depositing a silicon nitride compound (SiNx) insulating layer, if its deposition structure is not good, short-circuits at the overlap between the ITO pixel and the gate metal lines are prone to occur, that is, interlayer shorts at different levels in the vertical direction. (3) Brief description of the invention: The purpose of the present invention is to provide a method for manufacturing a thin film transistor liquid crystal display (TFT LCD). The method can use an insulating layer to isolate the ITO in the TFT LCD element structure from the second metal layer. On different planes, in order to reduce the chance of coplanar short circuit of TFT LCD and increase product yield. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) Φ Another object of the present invention is to provide a method for manufacturing a thin film transistor liquid crystal display. A structure over a metal layer, so that the second metal layer can shield part of the electric field generated when the first metal layer moves, so as to reduce the reverse tilt effect of the liquid crystal molecules, thereby reducing the gate lateral electric field (gate lateral field), therefore, each TFT LCD pixel only needs a smaller area of the black matrix, which can increase the open ratio of the TFT LCD. Another object of the present invention is to provide a method for manufacturing a thin-film transistor liquid crystal display. Only five photomasks are needed to obtain a high-transmittance TFT LCD. This simplifies the process steps and reduces the cost required to fabricate a TFT LCD. . 5 This paper size applies to China National Standards (CNS) 8-4 specifications (210 X297 mm). The Central Consumers Bureau of the Ministry of Economic Affairs of the Consumer Cooperatives Co., Ltd. 494266 A7 B7 _ V. Description of the invention (5) Another object of the present invention is to provide A thin film transistor liquid crystal display manufacturing method uses a second metal layer to cover the first metal layer to form a storage capacitor (Cs; storage capacitor), and the second metal layer extends beyond the range of the first metal layer. When making a TFT LCD, the area of the upper and lower electrode plates caused by the misalignment of the mask or the etching error can be reduced. Therefore, the obtained storage capacitor is more stable to ensure that each pixel in the LCD has the same on-off ( ON-OFF) Threshold Voltage to improve picture quality. Another object of the present invention is to provide a structure of a thin film transistor display, which uses a storage floating design of a charge storage mechanism, and can simultaneously reduce the short-circuit between different layers in the vertical direction (interlayer short) and Reduce coplanar shorts in the LCD structure to greatly improve product yield. (IV) Brief description of the figure: Figure 1 is a side view of the process steps and structure of a display using conventional inversion stacking technology to make thin-film transistor liquid crystals. FIG. 2 is a side view of the manufacturing process and structure of a thin film transistor liquid crystal display device according to the first embodiment of the present invention. FIG. 3 is a side view of a second embodiment of the present invention for manufacturing a thin film transistor liquid crystal display with a floating storage capacitor using a back channel etching technique and a structural side view thereof. FIG. 4 is a third embodiment of the present invention, and a side view of the manufacturing process and structure of a thin-film transistor liquid crystal display using an etch stop layer technology. _ 6 _ _ · Β_ϋ— · > ϋϋ ϋ > ϋ— mu ϋΒϋ —ϋ (Please read the note on the back * · Matters before filling out this page) I The paper size of this edition applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm) 494266 A7 B7 V. Description of the invention (6) Description of drawing number = printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 1_a certain board 3-first metal gate 4_silicon nitride layer 5-amorphous silicon Layer 6-π amorphous silicon layer core indium tin oxide 10-second metal layer 11_source 12_drain 13-protective layer 14-data line 15-storage capacitor 20-substrate 40-first metal gate 50 -Silicon nitride layer 60-Amorphous silicon layer 70-N ^ Amorphous silicon layer 90-Second metal layer 100-Storage capacitor electrode 110-Source 120-Drain 130-Storage capacitor plate area.140-Thin film transistor Channel region 150_protective layer 190-transmissive electrode region 200-indium tin oxide 320-substrate 340-first metal gate 350-silicon nitride layer 360-amorphous silicon layer 370-Γ ^ amorphous silicon Layer 390-second metal layer 400 · storage capacitor drift electrode 410_source 420_drain 440-thin film transistor channel region 450_protective layer 500-electrode region for controlling light transmittance 520-Substrate 540-Wenji 7 (Please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 494266 A7 B7 V. Description of the invention (1 550- Silicon nitride layer 570-Nitride sand layer 390-mineral amorphous silicon layer 610-storage capacitor electrode 630-drain 640-storage capacitor plate area 650-thin-film transistor channel area 660 protection layer 720-control light transmittance Electrode area 560-amorphous silicon layer 580-silicon nitride termination layer 600 · second metal layer 620-source ------------ (Please read the precautions on the back before filling (This page) Detailed description of the invention printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (5): Please refer to Figure 2, which is the first embodiment of the present invention to use the Back Channel Etching technology to make thin film transistors The manufacturing method steps and cross-sectional structure diagrams of a liquid crystal display (TFT LCD; Thin Film Liquid Crystal Display) are explained as follows: First, please refer to FIG. 2A, as in the traditional process, the first metal layer 30 is deposited by metal sputtering or the like ( Metal element is Ta, Cr, Mo, Ti or Al) in glass The upper substrate 20, the metal layer is about 2000 Angstroms. Please refer to Figure 2B, and use the traditional photomask (first photomask) etching technology to develop the 40-line area of the TFT LCD gate. Please refer to FIG. 2C. A chemical vapor deposition method (CVD; Chemical Vapor Deposition) is used to sequentially deposit a silicon nitride (SiNx) compound 50 on the TFT LCD smell region 40 and a part of the substrate 20, with a thickness of about 4000 Angstroms. Amorphous. Political layer 60 (A-Si; Amorphous Silicon) (or polycrystalline sand) The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 494266 Printed by A7 B7 of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs _ 5 (Explanation of the invention) (Poly-Si)), about 1500 Angstroms thick, and an amorphous silicon layer 70 (N + A-Si) (or polycrystalline silicon with N + ion implantation) (N + Poly-Si)), about 500 angstroms thick. Please refer to FIG. 2D, apply a second photomask, and use lithographic etching technology on the gate insulating layer directly above the gate to appropriately formulate a TFT LCD island region 80 to selectively form a semiconductor layer and an ohmic contact layer stack Structure with the semiconductor layer underneath and the ohmic contact layer above; and removing the A-Si (or Poly-Si) and N + type A-Si (or N + Poly-Si) deposited on SiNx outside the island region 80 Floor. Referring to FIG. 2E, a second metal layer 90 (metal element is Cr, Al, Ti or Mo) is deposited by metal sputtering or the like, and the thickness is about 5000 angstroms. Please refer to FIG. 2F. Use a third photomask to create a data line area (not shown), a thin film transistor source (S; Source) 110, a drain (D; Drain) 120, and a storage capacitor electrode 100 and Storage capacitor plate region 130, and remove the second metal layer 90 outside the regions 100, 110, 120, and 130; and then use photoresist to cover the second metal layer with erbium, and use etching technology to continue to partially N-type amorphous The silicon (N + _A_Si) (or N + Poly_Si) layer 70 is etched (ie, the ohmic contact layer is selectively removed) to define a thin film transistor channel region 140. Since the storage capacitor electrode 100 made of the second metal layer extends beyond the range of the gate region 40 made of the first metal layer, it is possible to avoid storage caused by mask alignment errors or etching errors. Short circuit caused by unstable capacitance and short distance between transparent electrodes to improve picture quality. 9 This paper size applies to China National Standard (CNS) A4 (21〇 > < 297mm) (Please read the precautions on the back before filling this page)
494266 經濟部中央標隼局員工消費合作社印製 五、發明説明β ) 請參考第2G圖，利用化學氣相沈積或自旋塗佈等方 式，在TFT LCD元件區域及部份SiNx 50層上佈上一層 由氮砂化合物（SiNx)、氧砂化合物（SiOx)或聚合物 (polyimide)爲材質的保護層150，厚約5000埃；再利用 第四光罩制定保護層150的區域，並預留TFT LCD D/S金 屬層和欲沈積的銦錫氧化物（ITO; Indium Tin Oxide)層 相連的接點開口 160與週邊驅動電路相連的接點開口（未 顯示）、儲存電容板區130和欲沈積的ITO層相連的接點 開口 180。 請參考第2H圖，係利用濺鍍方式沈積銦錫氧化物 (ITO; Indium Tin Oxide)層200，厚度約1000埃；再利 用第五光罩制定TFT LCD在各個獨立像素中用以控制透 光率的電極區域190，並去除該區域190以外的ITO層， 預留和週邊驅動電路相連的接點（未顯示）。 請參考圖3，係爲本發明第二個實施例利用背面通道 蝕刻（Back Channel Etching)技術製作具有浮動儲存電 容（Floating Storage Capacitor)的薄膜電晶體液晶顯示 器（TFT LCD; Thin Film Liquid Crystal Display)之製作 方法步驟及其截面構造圖，說明如下： 請參考第3A圖，如同傳統製程，利用金屬濺鍍等方 式沈積第一金屬層（金屬元素爲Cr，Mo, Ti，Ta或A1)在 玻璃基板320上，該金屬層厚約2000埃；並以傳統光罩 (第一光罩）蝕刻技術制定TFT LCD閘極340線區。 10 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 494266 經濟部中央標準局員工消費合作社印製 五、發明説明U〇 ) 請參考第3B圖，利用化學氣相沈積法（CVD; Chemical Vapor Deposttion)在 TFT LCD 閘極區域340及 部份基板320上依續沈積氮矽（SiNx)化合物350，厚約 3000埃，非晶砂層360 (A-Si; Amorphous Silicon)(或複 晶矽(P〇ly_Si))，厚約1500埃，以及具有N+型離子植入的 非晶矽層370 (N+A-Si)(或具有N+型離子植入的複晶 矽(N+Poly _Si))，厚約500埃。 請參考第3C圖，應用第二光罩在該閘極正上方的閘 極絕緣層上，適當制定TFT LCD島區380，選擇性地形 成一半導體層和歐姆接觸層堆叠式結構，該結構之半導 體層在下，歐姆接觸層在上，並去除島區380以外沈積在 SiNx35〇上的A-S1360 (或Poly-Si)及N+型A-Si37〇層（或 N+Poly _Si)。 請參考第3D圖，利用金屬濺鍍等方式沈積第二金屬 層（金屬元素爲Cr，Al，T域Mo )，厚度約5000埃。 請參考第3E圖，應用第三光罩以傳統蝕刻方式制定 資料線區（未顯示）、薄膜電晶體源極（S; Source) 410、汲極（D; Drain ) 420和儲存電容漂移電極400，並 去除該區域400、410及420以外的第二金屬層390 ;再利用 尙覆蓋在第二金屬層上的光阻繼續對部份N+型非晶矽 (N+-ASi) 370 (或N+Poly -Si)進行蝕刻（即，選擇性 的移去歐姆接觸層），以制定薄膜電晶體通道區440 〇 請參考第3F圖，利用化學氣相沈積或自旋塗佈等方 式，在TFT LCD元件區域及部份SiNx 350層上佈上一層 11 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐1 (請先閱讀背面之注意事項再填寫本頁) 『裝.494266 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention β) Please refer to Figure 2G, using chemical vapor deposition or spin coating, etc., on the TFT LCD element area and some SiNx 50 layers The upper layer is a protective layer 150 made of nitrogen sand compound (SiNx), oxysand compound (SiOx) or polymer (polyimide), with a thickness of about 5000 angstroms. The fourth photomask is used to define the area of the protective layer 150 and reserve it. TFT LCD D / S metal layer and indium tin oxide (ITO; Indium Tin Oxide) layer to be connected contact openings 160 contact openings (not shown) connected to the peripheral drive circuit, storage capacitor plate area 130 and The deposited ITO layer is connected to a contact opening 180. Please refer to Figure 2H. The sputtering method is used to deposit an ITO (Indium Tin Oxide) layer 200 with a thickness of about 1000 angstroms. A fifth reticle is used to develop a TFT LCD to control light transmission in each individual pixel. Rate electrode area 190, and remove the ITO layer outside this area 190, and reserve the contacts (not shown) connected to the surrounding drive circuit. Please refer to FIG. 3, which is a second embodiment of the present invention for fabricating a thin film liquid crystal display (TFT LCD; TFT LCD) with a floating storage capacitor by using back channel etching technology. The manufacturing method steps and cross-section structure diagrams are explained as follows: Please refer to Figure 3A. As in the traditional process, a first metal layer (metal element is Cr, Mo, Ti, Ta or A1) is deposited on the glass by using metal sputtering or the like. On the substrate 320, the metal layer has a thickness of about 2000 angstroms; and a TFT LCD gate 340 line region is formulated by a conventional photomask (first photomask) etching technique. 10 This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) (Please read the notes on the back before filling out this page) 494266 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs V. Invention Description U〇) Please Referring to FIG. 3B, a chemical vapor deposition method (CVD; Chemical Vapor Deposttion) is used to sequentially deposit a silicon nitride (SiNx) compound 350 on the TFT LCD gate region 340 and a part of the substrate 320, with a thickness of about 3000 angstroms, and an amorphous sand layer. 360 (A-Si; Amorphous Silicon) (or polycrystalline silicon (Poly_Si)), about 1500 angstroms thick, and an amorphous silicon layer 370 (N + A-Si) (or N + Ion-implanted polycrystalline silicon (N + Poly_Si)), about 500 angstroms thick. Please refer to FIG. 3C, apply a second photomask on the gate insulating layer directly above the gate, appropriately formulate a TFT LCD island region 380, and selectively form a stacked structure of a semiconductor layer and an ohmic contact layer. The semiconductor layer is below, the ohmic contact layer is above, and the A-S1360 (or Poly-Si) and N + type A-Si37 ° (or N + Poly_Si) layers deposited on the SiNx35o outside the island region 380 are removed. Referring to FIG. 3D, a second metal layer (metal elements are Cr, Al, and T-domain Mo) is deposited by a method such as metal sputtering with a thickness of about 5000 angstroms. Please refer to FIG. 3E. A third photomask is used to formulate a data line area (not shown), a thin film transistor source (S; Source) 410, a drain (D; Drain) 420, and a storage capacitor drift electrode 400 by conventional etching. And remove the second metal layer 390 outside the regions 400, 410, and 420; and then use the photoresist covered by ytterbium to continue to a portion of the N + -type amorphous silicon (N + -ASi) 370 (or N + Poly-Si) is etched (ie, the ohmic contact layer is selectively removed) to define a thin film transistor channel region 440. Please refer to FIG. 3F, using chemical vapor deposition or spin coating, etc., on the TFT LCD Component area and part of SiNx 350 layer with a layer of 11 This paper size applies to Chinese National Standard (CNS) A4 specifications (210X297 mm 1 (Please read the precautions on the back before filling out this page) 『Packing.
、1T 494266 經濟部中央標準局員工消費合作社印製 五、發明説明（11 ) 由氮矽化合物（SiNx)、氧矽化合物（SiOx)或聚合物 (Polyimide)爲材質的保護層450，厚約3000埃；再利用 第四光罩制定保護層450的區域，並預留TFT LCD D/S金 屬層和欲沈積的銦錫氧化物（ITO; Indium Tin Oxide)層 相連的接點開口460、和週邊驅動電路相連的接點開口 (未顯示）。 請參考第3G圖，係利用濺鍍方式沈積銦錫氧化物 (ITO; Indium Tin Oxide)層’厚度約2000埃；再利用第 五光罩制定TFT LCD在各個獨立像素中用以控制透光率 的電極區域500，並去除該區域500以外的ITO層，預留 和週邊驅動電路相連的接點（未顯示）。該儲存電容區 域510結構，是由透明電極500，儲存電容漂移電極400以 及閘極區域340重疊串聯而成，用以降低LCD結構中垂直 方向不同層次間的短路及共平面短路。假設儲存電容之 漂移電極400和閘極區域340間的電容値爲Ci，透明電極 500和儲存電容之漂移電極400之間的電容値爲Cj，整個 結構的儲存電容値爲Cs， 貝=士 + 士 ............⑴ 即1T 494266 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (11) A protective layer 450 made of nitrogen silicon compound (SiNx), oxygen silicon compound (SiOx) or polymer (Polyimide). The thickness is about 3000. Å; use the fourth photomask to define the area of the protective layer 450, and reserve the contact opening 460 connected to the TFT LCD D / S metal layer and the indium tin oxide (ITO; Indium Tin Oxide) layer to be deposited, and the surroundings A contact opening (not shown) connected to the driving circuit. Please refer to Figure 3G. The thickness of the indium tin oxide (ITO; Indium Tin Oxide) layer is about 2000 angstroms by sputtering. The fifth reticle is used to develop a TFT LCD to control the light transmittance in each individual pixel. Electrode area 500, and remove the ITO layer outside the area 500, and reserve contacts (not shown) connected to the peripheral driving circuit. The structure of the storage capacitor region 510 is formed by overlapping the transparent electrode 500, the storage capacitor drift electrode 400, and the gate region 340 in series to reduce short circuits and coplanar short circuits between different layers in the vertical direction in the LCD structure. Assume that the capacitance between the drift electrode 400 of the storage capacitor and the gate region 340 is Ci, the capacitance between the transparent electrode 500 and the drift electrode 400 of the storage capacitor is Cj, and the storage capacitance of the entire structure is Cs. Taxi ......... ⑴
1 1 --1-- G QGQC+G •(2) 由於此結構具有雙重絕緣特性，若其中某一層絕緣層 短路，亦不致於如傳統製程造成點缺陷，因此可大幅提 昇產品良率。 12 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 494266 經濟部中夬標隼局員工消費合作社印製 A7 B7 五、發明説明（12 ) 請參考圖4，係爲本發明第三個實施例利用蝕刻終止 層（Etching-Stop Layer)技術製作薄膜電晶體液晶顯示 器（TFT LCD; Thin Film Liquid Crystal Display)之製作 方法步驟及其截面構造圖，說明如下: 首先請參考第4A圖，如同傳統製程，利用金屬濺鍍 等方式沈積第一金屬層（金屬元素爲Cr，Ta，Mo, Ti或 Al)在玻璃基板520上，該金屬層厚約2000埃；並以傳統 光罩（第一光罩）蝕刻技術制定TFT LCD閘極540線 區。 請參考第4B圖，利用化學氣相沈積法（CVD; Chemical Vapor Deposition)在 TFT LCD 閘極區域540及 部份基板520上依續沈積氮矽（SiNx)化合物550，厚約 3000埃，非晶砂層560 (A_Si; Amorphous Silicon)(或複 晶矽？〇1”别），厚約5〇0埃，以及氮矽（8^^)化合物 570，厚約2000埃。 請參考第4C圖，應用第二光罩以傳統微影蝕刻技術 制定氮化矽（SiNx) 570化合物圖案，形成一終止層580 (Etching Stopper)。 請參考第4D圖，以化學氣相沈積法在TFT LCD終止 層580及非晶矽層上沈積具有N+型的非晶矽（N+-A-Si) 590 (或N+Poly -Si)，厚約500埃，或利用離子植入形成 歐姆接觸層；然後，再以金屬濺渡等方式沈積第二金屬 層600 (金屬元素爲Cr，Ti，Mo或A1)，厚約5000埃；之 後，應用第三光罩以傳統蝕刻方式制定資料線區（未顯 13 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ 一 (請先閱讀背面之注意事項再填寫本頁) 衣. 494266 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ί3 ) 示）、薄膜電晶體源極（S) 620汲極（D) 630和儲存電 容電極610及儲存電容板區640，並去除該區域外的第二 金屬層600 ;再利用尙覆蓋在第二金屬層上的光阻繼續對 Ν+型非晶矽（N+A-Si) 590 (或Ν+Poly-Si) /非晶矽A-Si 560 (或Poly_Si)進行蝕刻（即，選擇性的移去歐姆接觸 層），以制定薄膜電晶體通道區650。 請參考第4E圖，利用化學氣相沈積或自旋塗佈等方 式，在TFT LCD元件區域及部份終止層580上佈上一層 由氮矽化合物（SiNx)、氧矽化合物（SiOx)或聚合物 (Polyimide)爲材質的保護層660，厚約3000埃；再利用 第四光罩制定保護層660的區域，並預留TFT LCD D/S金 屬層和欲沈積的銦錫氧化物（ITO; Indium Tin Oxide)層 相連的接點開口670，預留和週邊驅動電路相連的接點開 口（未顯示），預留儲存電容板和欲沈積的ITO層相連 的接點開口 690。 請參考第4F圖，係利用濺鍍方式沈積銦錫氧化物 (ITO; Indium Tin Oxide)層，厚度約1000埃；再利用第 五光罩制定TFT LCD在各個獨立像素中用以控制透光率 的電極區域720，並去除該區域720以外的ITO層，預留 和週邊驅動電路相連的接點（未顯示）。 14 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)1 1 --1-- G QGQC + G • (2) Because this structure has double insulation properties, if one of the insulation layers is short-circuited, it will not cause point defects like traditional processes, so the product yield can be greatly improved. 12 (Please read the precautions on the back before filling this page) This paper size is applicable to Chinese National Standard (CNS) A4 size (210X297 mm) 494266 Printed by A7 B7, Employees' Cooperatives of the China National Standards Bureau, Ministry of Economic Affairs V. Description of the invention (12) Please refer to FIG. 4, which is a manufacturing method step and a thin film liquid crystal display (TFT LCD; Thin Film Liquid Crystal Display) using an etching stop layer (Etching-Stop Layer) technology according to a third embodiment of the present invention. The cross-sectional structure diagram is explained as follows: First, please refer to FIG. 4A. As in the traditional process, a first metal layer (metal element: Cr, Ta, Mo, Ti, or Al) is deposited on the glass substrate 520 by metal sputtering or the like. The thickness of the metal layer is about 2000 angstroms; and the TFT LCD gate 540 line area is formulated by the traditional photomask (first photomask) etching technology. Referring to FIG. 4B, a chemical vapor deposition method (CVD; Chemical Vapor Deposition) is used to sequentially deposit a silicon nitride (SiNx) compound 550 on the TFT LCD gate region 540 and a part of the substrate 520, with a thickness of about 3000 angstroms, and amorphous Sand layer 560 (A_Si; Amorphous Silicon) (or polycrystalline silicon? 〇1 "), and thickness of about 500 angstroms, and nitrogen silicon (8 ^^) compound 570, about 2000 angstroms. Please refer to Figure 4C, application The second photomask uses a conventional lithographic etching technique to formulate a silicon nitride (SiNx) 570 compound pattern to form an Etching Stopper. Please refer to FIG. 4D, and use chemical vapor deposition on the TFT LCD stop layer 580 and the TFT LCD. An N + -type amorphous silicon (N + -A-Si) 590 (or N + Poly-Si) is deposited on the amorphous silicon layer to a thickness of about 500 angstroms, or an ohmic contact layer is formed by ion implantation; The second metal layer 600 (metal element is Cr, Ti, Mo or A1) is deposited by sputtering, and the thickness is about 5000 angstroms. After that, a third mask is used to define the data line area by traditional etching (13 papers are not shown). Dimensions are applicable to China National Standard (CNS) A4 specifications (210X297 mm) ~ 1 (Please read the note on the back first (Please fill in this page again). 494266 A7 B7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (3), thin film transistor source (S) 620, drain (D) 630, and storage capacitor electrode. 610 and storage capacitor plate area 640, and remove the second metal layer 600 outside the area; and then use the photoresist covered by plutonium on the second metal layer to continue to the N + type amorphous silicon (N + A-Si) 590 ( Or N + Poly-Si) / amorphous silicon A-Si 560 (or Poly_Si) is etched (ie, the ohmic contact layer is selectively removed) to define a thin film transistor channel region 650. Please refer to FIG. 4E, using Chemical vapor deposition or spin coating, etc., a layer of silicon nitride (SiNx), oxygen silicon compound (SiOx), or polymer (Polyimide) is placed on the TFT LCD element area and a part of the termination layer 580. The protective layer 660 is about 3000 angstroms thick; the area of the protective layer 660 is defined by a fourth photomask, and the TFT LCD D / S metal layer and the indium tin oxide (ITO; Indium Tin Oxide) layer to be deposited are reserved. Contact opening 670, reserved for contact openings (not shown) connected to peripheral drive circuits, reserved for storage The opening 690 of the contact between the capacitor plate and the ITO layer to be deposited is shown in Figure 4F. The Indium Tin Oxide (ITO) layer is deposited by sputtering to a thickness of about 1000 angstroms. The photomask defines an electrode region 720 for controlling the light transmittance of the TFT LCD in each individual pixel, removes the ITO layer outside the region 720, and reserves a contact (not shown) connected to the peripheral driving circuit. 14 This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)