TW368752B - Manufacturing method for semiconductor capacitor and electrode board thereof - Google Patents

Abstract

A kind of manufacturing method for semiconductor capacitor which includes the following steps: providing a substrate covered by a first insulation layer and the substrate has a transistor with a diffusion region; forming a first conductive layer on the surface of insulation layer; forming a second conductive layer on the surface of the first conductive layer; defining a second insulation layer to form an opening exposed part of surface of the first conductive layer; forming a second conductive layer to adaptively cover the substrate; etching back the second conductive layer to the surface of first conductive layer to form a first conductive spacer neighbored the sidewall of second insulation layer; etching and removing the second insulation layer to leave the first conductive spacer; forming a third insulation layer to adaptively cover the substrate; etching back the third insulation layer to form an insulation spacer neighbored the sidewall of the first conductive spacer; forming a third conductive layer to adaptively cover the substrate; etching back the third conductive layer to the surface of the first insulation layer to form a second conductive space neighbored the sidewall of insulation spacer and leave part of the first conductive layer to determine the range of semiconductor capacitor electrode board; etching and removing the insulation spacer to leave the first conductive spacer, the second conductive spacer and part of the first conductive layer to constitute a crown-like electrode board of capacitor; forming a dielectric to cover the lower electrode board; and forming a third polycide layer to cover dielectric and constitute an upper electrode board of capacitor.