TW368718B - Manufacturing method for capacitors - Google Patents

Abstract

The invention provides a kind of manufacturing method for capacitors which includes the following steps: providing the semiconductor substrate with components; sequentially forming a first insulation layer, a second insulation layer and a third insulation layer on the semiconductor substrate; forming a cylindrical opening to expose the surface of semiconductor substrate at the location of forming the capacitor; forming a first conductive layer on the third insulation layer; forming a fourth insulation layer on the first conductive layer; employing the third insulation layer as the etch stop layer and sequentially removing the fourth insulation layer and the first conductive layer on top of the third insulation layer; removing the third insulation layer and the fourth insulation layer to accomplish the lower electrode of a capacitor; and, sequentially forming a defined dielectric and the second conductive layer on the lower electrode.