TW353779B - Method of producing semiconductor capacitor and structure thereof - Google Patents

Abstract

A method of producing a semiconductor capacitor, which comprises: forming an oxide layer on a silicon substrate, depositing TEOS thereon, thereby constituting a double-layer rough oxide layer structure; depositing a polysilicon layer as the first electrode of a capacitor; removing the double-layer rough oxide layer thereby exposing the bottom rough surface of the first electrode initially contacting therewith; depositing an insulation layer as the dielectric layer of the capacitor; and further depositing a polysilicon as the second electrode of the capacitor.