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TW277159B - Fabrication method for DRAM capacitor - Google Patents

Fabrication method for DRAM capacitor

Info

Publication number
TW277159B
TW277159BTW84106665ATW84106665ATW277159BTW 277159 BTW277159 BTW 277159BTW 84106665 ATW84106665 ATW 84106665ATW 84106665 ATW84106665 ATW 84106665ATW 277159 BTW277159 BTW 277159B
Authority
TW
Taiwan
Prior art keywords
capacitor
depositing
substrate
layer
fabrication method
Prior art date
Application number
TW84106665A
Other languages
Chinese (zh)
Inventor
Yuh-Hwa Lii
Jyi-Jinn Luo
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res InstfiledCriticalInd Tech Res Inst
Priority to TW84106665ApriorityCriticalpatent/TW277159B/en
Application grantedgrantedCritical
Publication of TW277159BpublicationCriticalpatent/TW277159B/en

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Abstract

An implementation method of DRAM capacitor with rough surface on one single silicon substrate comprises: depositing one substrate insulator on the above substrate; digging opening to substrate on determined capacitor position; depositing one first silicon layer to form first capacitor node; depositing one hemi spherical grain(HSG) layer; annealing treatment to form rough surface; depositing one thin insulator on rough polysilicon surface to form dielectric layer of capacitor; depositing one second polysilicon layer on the above thin insulator to form second capacitor node to complete the above capacitor.
TW84106665A1995-06-291995-06-29Fabrication method for DRAM capacitorTW277159B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
TW84106665ATW277159B (en)1995-06-291995-06-29Fabrication method for DRAM capacitor

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
TW84106665ATW277159B (en)1995-06-291995-06-29Fabrication method for DRAM capacitor

Publications (1)

Publication NumberPublication Date
TW277159Btrue TW277159B (en)1996-06-01

Family

ID=51397400

Family Applications (1)

Application NumberTitlePriority DateFiling Date
TW84106665ATW277159B (en)1995-06-291995-06-29Fabrication method for DRAM capacitor

Country Status (1)

CountryLink
TW (1)TW277159B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5909625A (en)*1996-06-241999-06-01Hyundai Electronics Industries Co., Ltd.Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5909625A (en)*1996-06-241999-06-01Hyundai Electronics Industries Co., Ltd.Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device
US6238995B1 (en)1996-06-242001-05-29Hyundai Electronics Industries Co., Ltd.Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device

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Legal Events

DateCodeTitleDescription
MM4AAnnulment or lapse of patent due to non-payment of fees
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